Active area contact hole lateral short circuit detection structure
By designing an alternating arrangement structure of shallow trench isolation zone, fin-type active zone and detection lead in FinFET semiconductor technology, the problem of waste of detection time and area of contact holes in the active zone in the prior art is solved. Achieve efficient detection results.
Patent Information
- Application Number
- CN202210669414.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-06-14
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2042-06-14
AI Technical Summary
In FinFET semiconductor technology, the existing test structure cannot effectively detect and analyze the lateral shorting of the contact holes in the active area, resulting in wasted detection time and area.
Design a detection structure including shallow trench isolation area, fin-type active area and detection lead. The fin-type active area and shallow trench isolation area are arranged alternately in the first direction, and the detection lead is used to lead the contact of the active area. Structure, implementing multiple detection modes through specific contact hole interconnections.
The detection of multiple lateral short-term problems of contact holes in active areas is achieved on a limited area, saving detection time and area.
Smart Images
Figure CN115050662B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor integrated circuit detection, and in particular to a lateral short-circuit detection structure for an active area contact hole. Background Art
[0002] In FinFET semiconductor technology, defect management is crucial to improving the yield of semiconductor devices. However, due to the extremely small size (below nanometer level) and complex three-dimensional structure, defect detection and analysis are often very difficult.
[0003] In the related technology, a test structure (test-key) similar to the real circuit is usually placed on the wafer to monitor the defects in the real circuit during the manufacturing process. However, the free area outside the real circuit is very valuable and limited. How to improve the utilization rate of the test-key and the efficiency of capturing problems has always been a challenge to the design method.
[0004] The problem of lateral short circuit of active area contact holes in FinFET process involves many modules such as active area contact holes (M0A), fin active area (Fin), source drain epitaxy (EPI), etc., and the defect generation models vary greatly. At present, the relevant test-key design is not optimized enough, and a single structure cannot effectively detect and analyze various failure modes. It is often necessary to rely on the mutual reference of multiple groups of test-keys to explore the possibility of the problem, which wastes both area and time. Summary of the invention
[0005] The present application provides an active area contact hole lateral short detection structure, which can solve the problem that the active area contact hole lateral short test structure in the related art wastes both integrated circuit area and detection time.
[0006] In order to solve the technical problem described in the background technology, the present application provides an active area contact hole lateral short detection structure, the active area contact hole lateral short detection structure comprises: a shallow trench isolation area, a fin-type active area and a detection lead; the fin-type active area and the shallow trench isolation area are alternately arranged along a first direction;
[0007] The fin-type active area includes two opposite first edges and a second edge in the first direction, and a first active area contact structure close to the first edge and a second active area contact structure close to the second edge are provided in the fin-type active area;
[0008] The shallow trench isolation region includes two opposite third edges and a fourth edge in the first direction, and a third active region contact structure close to the third edge and a fourth active region contact structure close to the fourth edge are provided in the shallow trench isolation region;
[0009] The first active area contact structure, the second active area contact structure, the third active area contact structure and the fourth active area contact structure extend along a second direction, and the second direction is perpendicular to the first direction;
[0010] The detection leads include a first detection lead, a second detection lead, a third detection lead and a fourth detection lead;
[0011] The first detection lead is used to lead out the third active area contact structure, the second detection lead is used to lead out the second active area contact structure, the third detection lead is used to lead out the first active area contact structure, and the fourth detection lead is used to lead out the fourth active area contact structure.
[0012] Optionally, the first detection lead, the second detection lead, the third detection lead and the fourth detection lead all extend along the first direction.
[0013] Optionally, the first detection lead, the second detection lead, the third detection lead and the fourth detection lead are arranged in a spaced relationship from each other in the second direction.
[0014] Optionally, a third contact hole is formed at the intersection of the first detection lead and the third active area contact structure; through the third contact hole, the first detection lead interconnects and leads out the third active area contact structure;
[0015] A second contact hole is formed at the intersection of the second detection lead and the second active area contact structure; through the second contact hole, the second detection lead interconnects and leads out the second active area contact structure;
[0016] A first contact hole is formed at the intersection of the third detection lead and the first active area contact structure; through the first contact hole, the third detection lead interconnects and leads out the first active area contact structure;
[0017] A fourth contact hole is formed at the intersection of the fourth detection lead and the fourth active region contact structure; through the fourth contact hole, the fourth detection lead interconnects and leads out the fourth active region contact structure.
[0018] Optionally, the fin-type active region includes at least two columns, and the shallow trench isolation region is spaced between two adjacent columns of the fin-type active regions in the first direction.
[0019] Optionally, each column of the fin-type active regions includes a plurality of rows spaced apart from each other in the second direction, and the rows of the fin-type active regions in each column of the fin-type active regions are aligned in a row.
[0020] Optionally, a middle active area contact structure is further provided in the fin-type active area and is located between the first active area contact structure and the second active area contact structure; the middle active area contact structure extends along the second direction.
[0021] Optionally, the number of the middle active region contact structure is one, and the middle active region contact structure is led out by the second detection lead or the third detection lead.
[0022] Optionally, the middle active region contact structure includes a plurality of;
[0023] A plurality of the middle active region contact structures are alternately led out from the second detection lead Pin and the third detection lead Pin.
[0024] Optionally, any two active area contact structures led by the second detection lead are not adjacent to each other; and any two active area contact structures led by the third detection lead are not adjacent to each other.
[0025] The technical solution of the present application includes at least the following advantages: the present application sets up a shallow trench isolation area, an active area contact structure, a fin-type active area and a detection lead structure on a limited area, which can realize the detection of various lateral short problems of active area contact holes, greatly saving the detection area and saving the time for analyzing the problem. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0027] Figure 1 A schematic diagram of a top view of a lateral short circuit detection structure for an active area contact hole provided in an embodiment of the present application is shown;
[0028] Figure 2 A schematic top view of a structure for detecting lateral short circuits of contact holes in an active area provided in another embodiment of the present application is shown. DETAILED DESCRIPTION
[0029] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0030] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0031] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0032] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.
[0033] Figure 1 FIG. 1 shows a schematic diagram of a top view of a lateral short circuit detection structure for an active area contact hole provided in an embodiment of the present application. It should be explained that the lateral short circuit detection structure for an active area contact hole is composed of a plurality of basic units. The number of basic units can be set according to requirements. The structure of each basic unit is as follows: Figure 1 shown.
[0034] from Figure 1 It can be seen from the figure that the active area contact hole lateral short detection structure includes: a shallow trench isolation area 110, a fin-type active area 120 and a detection lead.
[0035] The fin active regions 120 and the shallow trench isolation regions 110 are arranged alternately along a first direction. Figure 1 As shown in the horizontal direction, the fin active regions 120 in this embodiment have two columns, namely a left column of fin active regions 120 and a right column of fin active regions 120 , and the shallow trench isolation region 110 is spaced between the two columns of fin active regions 120 .
[0036] The fin-type active area 120 includes two opposite first edges 121 and a second edge 122 in a first direction. The fin-type active area 120 is provided with a first active area contact structure 131 close to the first edge 121 and a second active area contact structure 132 close to the second edge 122. The first active area contact structure 131 and the second active area contact structure 132 both extend along the second direction, i.e., along Figure 1 The second direction is perpendicular to the first direction.
[0037] The shallow trench isolation region 110 includes two opposite third edges 113 and fourth edges 114 in the first direction. A third active region contact structure 133 close to the third edge 113 and a fourth active region contact structure 134 close to the fourth edge 114 are provided in the shallow trench isolation region 110. The third active region contact structure 133 and the fourth active region contact structure 134 extend along the second direction, i.e., along Figure 1 The second direction is perpendicular to the first direction.
[0038] The detection leads include a first detection lead Pin1, a second detection lead Pin2, a third detection lead Pin3 and a fourth detection lead Pin4.
[0039] In this embodiment, the first detection lead Pin1, the second detection lead Pin2, the third detection lead Pin3 and the fourth detection lead Pin4 are arranged at intervals in the second direction, and all extend along the first direction. Optionally, the first detection lead Pin1, the second detection lead Pin2, the third detection lead Pin3 and the fourth detection lead Pin4 are arranged at intervals in sequence from top to bottom in the second direction. However, in other embodiments, the arrangement order of the first detection lead Pin1, the second detection lead Pin2, the third detection lead Pin3 and the fourth detection lead Pin4 in the second direction is not limited to this.
[0040] exist Figure 1 In the embodiment shown, the left column of fin active areas 120 and the right column of fin active areas 120 each include three rows of fin active areas, namely, a first row of fin active areas, a second row of fin active areas, and a third row of fin active areas arranged alternately from top to bottom. The rows of fin active areas in the same column are arranged alternately in the second direction, and the same rows of fin active areas in different columns are aligned in the first direction.
[0041] In the present embodiment, the first detection lead Pin1 passes through the first row of fin active areas 120 in the left column, the shallow trench isolation area 110 and the first row of fin active areas 120 in the right column from left to right in the first direction, and the first detection lead Pin1 leads to the third active area contact structure 133 located in the shallow trench isolation area 110.
[0042] In this embodiment, a third contact hole 143 is formed at the intersection of the first detection lead Pin1 and the third active region contact structure 133. Through the third contact hole 143, the first detection lead Pin1 interconnects and leads out the third active region contact structure 133.
[0043] The second detection lead Pin2 in this embodiment passes through the second row of fin active areas 120 in the left column, the shallow trench isolation area 110 and the second row of fin active areas 120 in the right column from left to right in the first direction, and the second detection lead Pin2 leads to the second active area contact structure 132 located in the left column fin active area 120 and the right column fin active area 120.
[0044] In this embodiment, a second contact hole 142 is formed at the intersection of the second detection lead Pin2 and the second active region contact structure 132. Through the second contact hole 142, the second detection lead Pin2 interconnects and leads out the second active region contact structure 132.
[0045] The third detection lead Pin3 in this embodiment passes through the third row of fin active areas 120 in the left column, the shallow trench isolation area 110 and the third row of fin active areas 120 in the right column from left to right in the first direction, and the third detection lead Pin3 leads to the first active area contact structure 131 located in the left column fin active area 120 and the right column fin active area 120.
[0046] In this embodiment, a first contact hole 141 is formed at the intersection of the third detection lead Pin3 and the first active area contact structure 131. Through the first contact hole 141, the third detection lead Pin3 interconnects the first active area contact structure 131 and leads out.
[0047] The fourth detection lead Pin4 in this embodiment is located under the third row of fin-type active areas, and leads out to the fourth active area contact structure 134 located in the shallow trench isolation area 110. In this embodiment, a fourth contact hole 144 is formed at the intersection of the fourth detection lead Pin4 and the fourth active area contact structure 134. Through the fourth contact hole 144, the fourth detection lead Pin4 interconnects and leads out the fourth active area contact structure 134.
[0048] Figure 2 FIG. 1 shows a schematic diagram of a top view of an active area contact hole lateral short detection structure provided by another embodiment of the present application. It should be explained that the active area contact hole lateral short detection structure is composed of a plurality of basic units, the number of which can be set according to requirements, and the structure of each basic unit is as follows: Figure 2 shown.
[0049] Figure 2 The embodiment shown is in Figure 1 On the basis of the illustrated embodiment, the fin-type active area 120 is further provided with a first middle active area contact structure 151 and a second middle active area contact structure 152 located between the first active area contact structure 131 and the second active area contact structure 132 .
[0050] The first middle active region contact structure 151 and the second middle active region contact structure 152 are arranged at intervals in the first direction and both extend along the second direction.
[0051] Figure 2 In the illustrated embodiment, the first middle active area contact structure 151 is close to the first active area contact structure 131 , and the second middle active area contact structure 152 is close to the second active area contact structure 132 .
[0052] In addition to leading out the second active area contact structure 132, the second detection lead Pin2 also leads out the first middle active area contact structure 151. A second contact hole 142 is formed at the intersection of the second detection lead Pin2 and the first middle active area contact structure 151, and interconnection and leading out are achieved through the second contact hole 142.
[0053] The third detection lead Pin3 leads out the second middle active area contact structure 152 in addition to the first active area contact structure 131. A first contact hole 141 is formed at the intersection of the third detection lead Pin3 and the second middle active area contact structure 152, and interconnection is achieved through the first contact hole 141.
[0054] exist Figure 2 On the basis of, in other embodiments, the number of the middle active area contact structures between the first active area contact structure 131 and the second active area contact structure 132 may be N, where N is a positive integer greater than 2, and optionally, N is an even number. The N middle active area contact structures are alternately led out by the second detection lead Pin2 and the third detection lead Pin3, and between any two active area contact structures led out by the second detection lead Pin2, there is an active area contact structure led out by the third detection lead Pin3.
[0055] It can be used through the following schemes Figure 1 or Figure 2 The active area contact hole lateral short circuit detection structure shown in the figure performs lateral short circuit detection on the active area contact hole:
[0056] A short circuit test can be performed by applying a relatively high voltage to one of the first detection lead Pin1 and the fourth detection lead Pin4 and a relatively low voltage to the other detection lead. If the test result shows that a short circuit occurs, it is determined that the top of the active area contact structure of the shallow trench isolation area 110 is abnormal.
[0057] A short circuit test can be performed by applying a relatively high voltage to one of the second detection lead Pin2 and the third detection lead Pin3 and a relatively low voltage to the other detection lead. If the test result shows that a short circuit occurs, it is determined that the active area contact structure at the position of the fin active area 120 is abnormal or the epitaxial layer under the fin active area 120 is abnormal.
[0058] A short circuit test can be performed by applying a relatively high voltage to one of the first detection lead Pin1 and the second detection lead Pin2 and a relatively low voltage to the other detection lead. If the test result shows that a short circuit occurs, it is determined that the second edge of the fin active area 120 is abnormal.
[0059] A short circuit test can be performed by applying a relatively high voltage to one of the third detection lead Pin3 and the fourth detection lead Pin4 and a relatively low voltage to the other detection lead. If the test result shows that a short circuit occurs, it is determined that the first edge of the fin active area 120 is abnormal.
[0060] Figure 1 and Figure 2 The illustrated embodiment can detect various lateral short problems of active area contact holes by setting up shallow trench isolation areas, active area contact structures, fin-type active areas and detection lead structures on a limited area, thereby greatly saving the detection area and the time for analyzing the problem.
[0061] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection created by this application.
Claims
1. A lateral short circuit detection structure for active area contact holes, characterized in that: The active area contact hole lateral short detection structure comprises: a shallow trench isolation area, a fin-type active area and a detection lead; the fin-type active area and the shallow trench isolation area are alternately arranged along a first direction; The fin-type active area includes two opposite first edges and a second edge in the first direction, and a first active area contact structure close to the first edge and a second active area contact structure close to the second edge are provided in the fin-type active area; The shallow trench isolation region includes two opposite third edges and a fourth edge in the first direction, and a third active region contact structure close to the third edge and a fourth active region contact structure close to the fourth edge are provided in the shallow trench isolation region; The first active area contact structure, the second active area contact structure, the third active area contact structure and the fourth active area contact structure extend along a second direction, and the second direction is perpendicular to the first direction; The detection leads include a first detection lead, a second detection lead, a third detection lead and a fourth detection lead; The first detection lead is used to lead out the third active area contact structure, the second detection lead is used to lead out the second active area contact structure, the third detection lead is used to lead out the first active area contact structure, and the fourth detection lead is used to lead out the fourth active area contact structure.
2. The active area contact hole lateral short detection structure according to claim 1, characterized in that: The first detection lead, the second detection lead, the third detection lead and the fourth detection lead all extend along the first direction.
3. The active area contact hole lateral short detection structure according to claim 1, characterized in that: The first detection lead, the second detection lead, the third detection lead and the fourth detection lead are arranged in intervals with each other in the second direction.
4. The active area contact hole lateral short detection structure according to claim 1, characterized in that: A third contact hole is formed at the intersection of the first detection lead and the third active area contact structure; the first detection lead interconnects and leads out the third active area contact structure through the third contact hole; A second contact hole is formed at the intersection of the second detection lead and the second active area contact structure; The second detection lead leads out the second active region contact structure through the second contact hole; A first contact hole is formed at the intersection of the third detection lead and the first active area contact structure; through the first contact hole, the third detection lead interconnects and leads out the first active area contact structure; A fourth contact hole is formed at the intersection of the fourth detection lead and the fourth active area contact structure; The fourth detection lead leads out the fourth active region contact structure interconnection through the fourth contact hole.
5. The active area contact hole lateral short detection structure according to claim 1, characterized in that: The fin-type active region includes at least two columns, and the shallow trench isolation region is spaced between two adjacent columns of the fin-type active regions in the first direction.
6. The active area contact hole lateral short detection structure according to claim 1, characterized in that: Each column of the fin-type active regions includes a plurality of rows spaced apart from each other in the second direction, and the rows of the fin-type active regions in each column of the fin-type active regions are aligned in a row.
7. The active area contact hole lateral short detection structure according to claim 1, characterized in that: The fin-type active area is further provided with a middle active area contact structure located between the first active area contact structure and the second active area contact structure; the middle active area contact structure extends along the second direction.
8. The active area contact hole lateral short detection structure according to claim 7, characterized in that: The number of the middle active region contact structure is one, and the middle active region contact structure is led out by the second detection lead or the third detection lead.
9. The active area contact hole lateral short detection structure according to claim 7, characterized in that: The middle active region contact structure includes a plurality of; A plurality of the middle active region contact structures are alternately led out from the second detection lead Pin and the third detection lead Pin.
10. The active area contact hole lateral short detection structure according to claim 9, characterized in that: Any two active area contact structures led by the second detection lead are not adjacent to each other; and any two active area contact structures led by the third detection lead are not adjacent to each other.