Method for manufacturing semiconductor device and manufacturing apparatus for semiconductor device

Abstract

A method of manufacturing a semiconductor device and a manufacturing apparatus for a semiconductor device are provided. The method of manufacturing a semiconductor device includes: adsorbing a semiconductor device wafer to a chuck mechanism and horizontally rotating the semiconductor device wafer; horizontally rotating a rotating tool by a vertical main shaft to which ultrasonic waves are applied; modifying an outer peripheral end portion of the horizontally rotating semiconductor device wafer by the horizontally rotating rotating tool, thereby forming a groove in the outer peripheral end portion; in the modifying, correcting a front end shape of the horizontally rotating rotating tool by a tool shaping grinding wheel; and after the modifying, grinding one main surface of the horizontally rotating semiconductor device wafer by a horizontally rotating cup-shaped grinding wheel.

Description

[0001] Cross-reference of related applications

[0002] This application claims priority to Japanese Patent Application No. 2021-039546, filed with the Japan Patent Office on March 11, 2021, the entire contents of which are hereby incorporated by reference. Technical Field

[0003] The present invention relates to a method for manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device. Background Technology

[0004] In the manufacture of semiconductor devices, it is required to package semiconductor device wafers into thinner layers. This thinning process is achieved using grinding with a fixed abrasive wheel. However, if chipping occurs at the wafer edges during this thinning process, it reduces the yield of the semiconductor device chip. Therefore, it is known that, to suppress wafer chipping, the wafer edges are trimmed (beveling) before the grinding process used for thinning.

[0005] For example, Japanese Patent Publication No. 2009-39808 discloses the use of a cup-shaped diamond grinding wheel for edge grinding (chamfering) of a semiconductor substrate. In Japanese Patent Publication No. 2009-39808, a horizontally rotating diamond grinding wheel is used to perform edge grinding on a horizontally rotating semiconductor substrate. Specifically, the horizontally rotating diamond grinding wheel is lowered from above, with the vertical surface of the outer periphery of the diamond grinding wheel overlapping the vertical surface of the outer periphery of the semiconductor substrate, to perform grinding cuts towards the edge surface of the semiconductor substrate.

[0006] Furthermore, Japanese Patent Publication No. 2011-142201 discloses an edge grinding process for a semiconductor substrate using a diamond edge grinding wheel that rotates vertically along a horizontal axis. In the edge grinding process of Japanese Patent Publication No. 2011-142201, the vertically rotating edge grinding wheel is lowered, reducing the thickness of the outer periphery of the horizontally rotating semiconductor substrate to a desired thickness.

[0007] In addition, Japanese Patent Publication No. 9-216152 discloses an end-grinding apparatus that uses a spindle arranged along the Y-axis (horizontal direction) to rotate a diamond grinding wheel vertically, so that the outer peripheral surface of the diamond grinding wheel comes into contact with the outer peripheral portion of a horizontally rotating semiconductor wafer for grinding.

[0008] In addition, in Japanese Patent Publication No. 2020-31106, a technology is disclosed in which a semiconductor device wafer is horizontally rotated by a chuck mechanism, and a rotary tool is horizontally rotated by a vertical spindle to which ultrasonic waves are applied, and the peripheral side surface of the semiconductor device wafer is trimmed by the rotary tool.

[0009] In addition, a WSS (Wafer Support System) is known, which is a method in which a BG tape (Back Grind Tape) is attached to the device surface of a semiconductor device wafer as a grinding protection layer, and a support wafer is formed on the device surface of the semiconductor device wafer via a resin. SUMMARY

[0010] The manufacturing method of the semiconductor device of the embodiment of the present application includes: chucking a semiconductor device wafer to a chuck mechanism and horizontally rotating the semiconductor device wafer; horizontally rotating a rotary tool by a vertical spindle to which ultrasonic waves are applied; trimming an outer peripheral end portion of the horizontally rotating semiconductor device wafer by the horizontally rotating rotary tool, thereby forming a groove in the outer peripheral end portion; in the trimming, correcting a front end shape of the horizontally rotating rotary tool by a tool forming grinding wheel; and after the trimming, grinding one main surface of the horizontally rotating semiconductor device wafer by a horizontally rotating cup-shaped grinding wheel. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 is a plan view showing a manufacturing apparatus of a semiconductor device of the embodiment of the present application.

[0012] Figure 2 is a front view of an edge trimming apparatus of a manufacturing apparatus of a semiconductor device of the embodiment of the present application.

[0013] Figure 3 is a plan view of an edge trimming apparatus of a manufacturing apparatus of a semiconductor device of the embodiment of the present application.

[0014] Figure 4 is a graph showing image data of a photographing apparatus of a manufacturing apparatus of a semiconductor device of the embodiment of the present application.

[0015] Figures 5A-5D is a graph showing a manufacturing method of a semiconductor device of the embodiment of the present application. Figure 5A is a graph showing a state in which a semiconductor device wafer is prepared in a chucking process, Figure 5B is a graph showing a state in which trimming is performed in an edge trimming process, Figure 5C is a graph showing a state in which the edge trimming process is completed,Figure 5D is a view showing a state in which thinning is performed in the thinning process.

[0016] Figure 6A and Figure 6B is a view showing the vicinity of the trimmed surface in the embodiment of the present application. Figure 6A is a view showing a state in which the edge trimming process is completed, Figure 6B is a view showing a state in which thinning is performed in the thinning process.

[0017] Figures 7A-7D is a view showing a manufacturing method of a semiconductor device in another embodiment of the present application. Figure 7A is a view showing a state in which a semiconductor device wafer is prepared in the adsorbing process, Figure 7B is a view showing a state in which trimming is performed in the edge trimming process, Figure 7C is a view showing a state in which the edge trimming process is completed, Figure 7D is a view showing a state in which thinning is performed in the thinning process. DETAILED DESCRIPTION

[0018] In the following detailed description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments can be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to simplify the drawing.

[0019] As described above, in the field of semiconductor devices, further thinning of semiconductor device wafers is required, and in order to achieve the further thinning, a high-precision trimming technique capable of preventing chipping of semiconductor device wafers is required.

[0020] However, in the above-described prior art, there are problems that should be improved in order to achieve a high-precision and high-efficiency edge trimming process capable of suppressing chipping of semiconductor device wafers.

[0021] Specifically, in a method in which the edge is trimmed by a cup-shaped diamond grinding wheel type diamond grinding wheel as in the above-described prior art, there are problems of slow processing speed and poor productivity. In addition, there are disadvantages that the perpendicularity of the trimmed bottom surface is destroyed due to wear of the cup-shaped diamond grinding wheel type diamond grinding wheel, and the trimmed bottom surface becomes a conical shape.

[0022] In addition, in a method in which the edge portion of a horizontally rotating semiconductor device wafer is trimmed by pressing a vertically rotating diamond tool against the edge portion, the diamond tool and the semiconductor device wafer are in line contact, and thus there is a disadvantage that the shear stress on the semiconductor device wafer is large.

[0023] Therefore, in a method of forming a support wafer for a semiconductor device wafer by a WSS via a resin on a device surface of the semiconductor device wafer, in a case where the bonding of the WSS is imperfect, new defects are sometimes generated in the semiconductor device wafer and the WSS due to the shear stress generated by the diamond tool.

[0024] In addition, in a method of processing an edge portion of a device surface of a semiconductor device wafer by a diamond tool, since the paste of a BG tape or the formation of a support wafer by a WSS is performed in a state where a step is formed on the outer periphery of the device surface, the thickness of the semiconductor device wafer is likely to deviate at the thinning process.

[0025] In addition, in a method of trimming a device surface of the semiconductor device wafer, the semiconductor wafer such as silicon (Si) located thereunder has to be processed via a metal and an insulating film which are difficult to process, so the wear of the diamond tool becomes large.

[0026] In addition, in a method of trimming a device surface of the semiconductor device wafer, the flying debris and the contamination are likely to adhere to the device surface, so a precision cleaning or the like to remove the debris and the contamination is required, and as a result, there is a problem that the processing cost increases.

[0027] In addition, as in the related art disclosed in Japanese Patent Publication No. 2020-31106, a method of trimming a peripheral surface of a horizontally rotating semiconductor device wafer by a rotary tool that is horizontally rotated by a vertical spindle to which an ultrasonic wave is applied can perform trimming at high speed and high precision. However, in order to achieve practical use as mass production technology, a processing technology capable of stably obtaining a high yield of a high-precision and high-quality trimming shape and a trimming surface property is required.

[0028] The present application has been achieved in view of the above-described circumstances, and an object thereof is to provide a manufacturing method and a manufacturing apparatus of a semiconductor device capable of obtaining a stable trimming shape and a trimming surface property, capable of processing a high-functional semiconductor device wafer at a high yield, and excellent in productivity.

[0029] The manufacturing method of a semiconductor device of the present application includes: adsorbing a semiconductor device wafer to a chuck mechanism and horizontally rotating the semiconductor device wafer; horizontally rotating a rotary tool by a vertical spindle to which an ultrasonic wave is applied; trimming an outer peripheral end portion of the horizontally rotating semiconductor device wafer by the horizontally rotating rotary tool, thereby forming a groove in the outer peripheral end portion; in the trimming, correcting a front end shape of the horizontally rotating rotary tool by a tool forming grinding wheel; and after the trimming, grinding one main surface of the horizontally rotating semiconductor device wafer by a horizontally rotating cup-shaped grinding wheel.

[0030] Further, the semiconductor device manufacturing apparatus of the present application includes a chuck mechanism configured to chuck a semiconductor device wafer and horizontally rotate the semiconductor device wafer, a vertical spindle configured to horizontally rotate a rotary tool, an ultrasonic vibration apparatus configured to apply ultrasonic waves to the vertical spindle, the rotary tool configured to perform trimming of an outer peripheral end portion of the semiconductor device wafer chucked to the chuck mechanism and horizontally rotated by the vertical spindle to which the ultrasonic waves are applied, thereby forming a groove in the outer peripheral end portion, and a tool forming grinding wheel configured to correct a front end shape of the rotary tool by abutting against the front end of the rotary tool that is horizontally rotated.

[0031] The semiconductor device manufacturing method of the present application includes: chucking a semiconductor device wafer to a chuck mechanism and horizontally rotating the semiconductor device wafer; horizontally rotating a rotary tool by a vertical spindle to which ultrasonic waves are applied; performing trimming of an outer peripheral end portion of the semiconductor device wafer that is horizontally rotated by the rotary tool that is horizontally rotated, thereby forming a groove in the outer peripheral end portion; in the trimming, correcting a front end shape of the rotary tool that is horizontally rotated by a tool forming grinding wheel; and after the trimming, polishing one main surface of the semiconductor device wafer that is horizontally rotated by a cup-shaped grinding wheel that is horizontally rotated. By such a process, the outer peripheral end portion of the semiconductor device wafer can be trimmed without being affected by various kinds of cover films such as a metal film or an insulating film formed on the surface of the device surface of the semiconductor device wafer. In the edge trimming process, the rotary tool is horizontally rotated by the vertical spindle to which the ultrasonic waves are applied, so that trimming at high speed and high accuracy can be performed. Then, in the edge trimming process, the front end shape of the rotary tool that is horizontally rotated is corrected to an appropriate shape by the tool forming grinding wheel. Thus, a stable trimming shape and a trimming surface property can be obtained for the semiconductor device wafer, and a high-function semiconductor device wafer can be processed at a high yield. That is, excellent productivity that cannot be obtained in the related art can be obtained. Specifically, a very thinned semiconductor device wafer having a thickness of 20 μm or less can be mass-produced at a high yield.

[0032] Further, the semiconductor device manufacturing method of the present application can include: in the trimming, photographing a shape of the groove; analyzing the shape of the groove based on image data obtained by the photographing; and correcting the front end shape of the rotary tool by the tool forming grinding wheel based on the analyzed shape of the groove. Thus, by continuous and efficient trimming processing, an accurate trimming shape can be obtained at high accuracy.

[0033] Further, the method of manufacturing a semiconductor device of the present application can include, in the trimming, projecting parallel light on the groove, and analyzing the shape of the groove based on the shape of a shadow of the parallel light. Thus, the shape of the groove of the semiconductor wafer after trimming can be efficiently and accurately detected, and a groove with a high-precision and stable shape and surface property can be efficiently processed.

[0034] Further, the method of manufacturing a semiconductor device of the present application can include, in the trimming, adjusting the support angle of the tool forming grinding wheel while correcting the shape of the tip of the rotary tool. Thus, the shape of the tip of the rotary tool can be always maintained in an appropriate state, and therefore, high-precision trimming processing can be continuously and efficiently performed. Specifically, a trimming surface that is inclined at an appropriate angle can be formed at the outer peripheral end portion of the semiconductor wafer.

[0035] Further, the manufacturing apparatus of a semiconductor device of the present application includes a chuck mechanism configured to adsorb and horizontally rotate a semiconductor wafer, a vertical spindle configured to horizontally rotate a rotary tool, an ultrasonic vibration apparatus configured to apply ultrasonic waves to the vertical spindle, the rotary tool configured to trim an outer peripheral end portion of the semiconductor wafer adsorbed to the chuck mechanism and horizontally rotated while being horizontally rotated by the vertical spindle to which the ultrasonic waves are applied, thereby forming a groove at the outer peripheral end portion, and a tool forming grinding wheel configured to correct the shape of the tip of the rotary tool by abutting against the tip of the rotary tool that is horizontally rotated. With such a configuration, the shape of the tip of the rotary tool that trims the outer peripheral end portion of the semiconductor wafer can be always maintained in an appropriate state, and high-precision and efficient trimming processing can be continuously performed. Therefore, high-yield manufacturing of a semiconductor wafer with a high function at the forefront can be achieved, and productivity can be improved.

[0036] Further, the manufacturing apparatus of a semiconductor device of the present application can further include an observation unit configured to capture the shape of the groove and analyze the shape of the groove based on image data obtained by the capturing, and the tool forming grinding wheel corrects the shape of the tip of the rotary tool based on the analyzed shape of the groove. With such a configuration, the trimming state of the outer peripheral end portion of the semiconductor wafer can be always accurately grasped. Therefore, the tip shape can be accurately corrected by the tool forming grinding wheel so that the shape of the tip of the rotary tool is always in an appropriate state. As a result, high-precision and efficient trimming processing can be continuously performed, and the yield of semiconductor wafer manufacturing can be improved.

[0037] A manufacturing method of a semiconductor device and a manufacturing apparatus according to an embodiment of the present application will be described in detail below with reference to the drawings.

[0038] Figure 1 is a plan view showing a manufacturing apparatus 1 of a semiconductor device according to an embodiment of the present application, and shows a schematic configuration of a full-automatic grinding apparatus to which an edge trimming apparatus 10 is assembled.

[0039] Figure 1 The manufacturing apparatus 1 shown is an apparatus that automatically performs a series of processes from a chucking process to an edge trimming process, a thinning process, and a cleaning process of a semiconductor device wafer 30 (refer to Figure 2 ).

[0040] The manufacturing apparatus 1 has a conveyance robot 21 that conveys the semiconductor device wafer 30, and a standby stage 22, an ultrasonic trimming stage 23, a rough grinding stage 25, a fine grinding stage 27, and a cleaning unit 29 that perform respective processes.

[0041] Then, the manufacturing apparatus 1 has a 90-degree indexing stage 20 that indexes the semiconductor device wafer 30 by 90 degrees at the standby stage 22, the ultrasonic trimming stage 23, the rough grinding stage 25, and the fine grinding stage 27.

[0042] The standby stage 22 is a stage that performs the chucking process of the semiconductor device wafer 30. First, the semiconductor device wafer 30 that is a processing target is conveyed to the standby stage 22 by the conveyance robot 21. Then, the chucking process of the semiconductor device wafer 30 is performed at the standby stage 22.

[0043] The ultrasonic trimming stage 23 is a stage that performs the edge trimming process of the semiconductor device wafer 30. After the chucking process at the standby stage 22, the semiconductor device wafer 30 is indexed by 90 degrees in the clockwise direction by the 90-degree indexing stage 20. Then, the edge trimming process of the semiconductor device wafer 30 is performed at the ultrasonic trimming stage 23. Specifically, a portion of the outer peripheral end portion 34 (refer to Figure 2 ) of the semiconductor device wafer 30 is ground by the rotary cutter 17 of the edge trimming apparatus 10 that rotates horizontally in a state in which ultrasonic waves are applied.

[0044] In addition, the manufacturing apparatus 1 is provided with a photographing apparatus 45 as an observation unit that accurately photographs and analyzes the trimming shape of the semiconductor device wafer 30. The photographing apparatus 45 photographs the vicinity of the outer peripheral end portion 34 of the semiconductor device wafer 30, and analyzes shape information of the groove 35 (refer to Figure 2 ) formed in the outer peripheral end portion 34 by the edge trimming process on the basis of image data 49 (refer to Figure 4 ). Thus, high-precision trimming is realized.

[0045] The rough grinding table 25 and the fine grinding table 27 are tables for performing the thinning process of the semiconductor device wafer 30. A rough grinding head 26 for rough grinding the upper surface of the semiconductor device wafer 30 is provided above the rough grinding table 25. A fine grinding head 28 for fine grinding the upper surface of the semiconductor device wafer 30 is provided above the fine grinding table 27.

[0046] The semiconductor device wafer 30, after undergoing edge trimming in the ultrasonic trimming station 23, is further rotated 90 degrees clockwise by the 90-degree indexing station 20. Then, it undergoes thin-layer rough grinding using the rough grinding head 26 in the rough grinding station 25.

[0047] Then, the semiconductor device wafer 30, which has been rough ground on the rough grinding table 25, is indexed to the fine grinding table 27 via the 90-degree indexing table 20, and is finely ground to the final thickness by the fine grinding head 28.

[0048] After the semiconductor device wafer 30 has completed the thinning process on the precision grinding table 27, it returns to the standby table 22 via the 90-degree indexing table 20, and is then transported to the cleaning unit 29 by the transport robot 21. Then, the cleaning process of cleaning the semiconductor device wafer 30 is carried out in the cleaning unit 29.

[0049] in addition, Figure 1 The manufacturing apparatus 1 shown is merely one example of an embodiment of the present invention. For example, the edge trimming device 10 may be used only from... Figure 1 The manufacturing device 1 shown is separated and used as a separate fully automatic finishing device.

[0050] Alternatively, for example, it can also be in Figure 1 An edge trimming device 10 is provided in the part where the cleaning unit 29 is located, and it is separate from the grinding table consisting of the rough grinding table 25 and the fine grinding table 27. In this case, the manufacturing apparatus 1 can also be configured as an automatic grinding apparatus with the edge trimming device 10 attached.

[0051] Figure 2 This is a front view showing the general configuration of the edge trimming device 10.

[0052] like Figure 2 As shown, the edge trimming device 10 is a device for trimming the outer peripheral end 34 of the semiconductor device wafer 30.

[0053] The edge trimming device 10 includes: a vacuum chuck 11 for supporting a semiconductor device wafer 30 and rotating the semiconductor device wafer 30 horizontally; a rotary cutter 17 for grinding the outer peripheral end 34 of the semiconductor device wafer 30; a vertical spindle 15 for supporting the rotary cutter 17; and an ultrasonic vibration device 16 for applying ultrasonic waves to the vertical spindle 15.

[0054] The vacuum chuck 11 constitutes a chuck mechanism that holds the semiconductor device wafer 30. The vacuum chuck 11 is disposed horizontally rotatably with its rotational axis made substantially vertical. The semiconductor device wafer 30 is mounted on the upper surface of the vacuum chuck 11 through a holding layer formed by the support base plate 13 or the like, and the semiconductor device wafer 30 rotates horizontally together with the vacuum chuck 11 or the like.

[0055] The rotary tool 17 is, for example, a diamond wheel tool in which a diamond wheel is fixed with a ceramic bond. The central portion of the rotary tool 17 is supported by the vertical spindle 15 and rotates horizontally, and the front end, i.e., the outer peripheral wheel surface 18 is disposed at a position that can abut against the outer peripheral end portion 34 of the semiconductor device wafer 30.

[0056] The vertical spindle 15 is a rotary shaft that supports the rotary tool 17. The vertical spindle 15 is disposed so that the rotary shaft extends in the vertical direction and is rotatable horizontally. The vertical spindle 15 is rotationally driven by a drive device not shown, whereby the rotary tool 17 rotates horizontally.

[0057] The vertical spindle 15 and the rotary tool 17 are disposed so as to be movable in the horizontal direction toward the semiconductor device wafer 30. Thereby, the horizontally rotating rotary tool 17 is brought close to the semiconductor device wafer 30 held by the vacuum chuck 11 and rotating horizontally, and the outer peripheral wheel surface 18 of the rotary tool 17 is pressed against the outer peripheral end portion 34 of the semiconductor device wafer 30. Then, the outer peripheral end portion 34 of the semiconductor device wafer 30 is ground with high precision by the outer peripheral wheel surface 18 of the rotary tool 17, whereby the modified surface 36 having the desired average depth D (refer to FIG. 2) can be formed. Figure 4 ) of the semiconductor device wafer 30.

[0058] In addition, as described above, in order to press the outer peripheral wheel surface 18 of the horizontally rotating rotary tool 17 against the outer peripheral end portion 34 of the horizontally rotating semiconductor device wafer 30 to perform modification, the vacuum chuck 11 that holds the semiconductor device wafer 30 can also be movable in the horizontal direction.

[0059] In addition, the rotary tool 17 or the vacuum chuck 11 can also be movable in the vertical direction. Thereby, the position of the rotary tool 17 in the vertical direction with respect to the semiconductor device wafer 30 can be changed to repeatedly perform modification. Also, the modified surface 36 can be formed in the desired range in the vertical direction with respect to the outer peripheral end portion 34 of the semiconductor device wafer 30.

[0060] In addition, the vertical spindle 15 is supported by bearings 19 at both above and below the rotary tool 17. In this way, by supporting the vertical spindle 15 at both above and below by bearings, the rotational vibration of the rotary tool 17 can be suppressed, the rotational precision can be improved, and a precision modification process with good precision can be performed.

[0061] As the bearing 19, a general mechanical bearing such as a ball bearing, a cylindrical roller bearing, a tapered roller bearing, or the like can be used, for example. In addition, at least one of the bearings 19 provided above and below the rotary tool 17 can be an air bearing that forms an air film between the bearing 19 and the vertical spindle 15 and noncontact- supports the vertical spindle 15. By using an air bearing as the bearing 19, the rotary tool 17 can be held with low friction and high accuracy and rotated at high speed. Thus, the peripheral end portion 34 of the semiconductor device wafer 30 can be finished with high accuracy.

[0062] In particular, by using an air bearing as the bearing 19 provided below the rotary tool 17, deterioration due to scattering of processing water can be suppressed, and high life of the bearing 19 and the vertical spindle 15 can be achieved.

[0063] The ultrasonic vibration device 16 is a device that applies ultrasonic waves to the vertical spindle 15. By applying ultrasonic waves to the vertical spindle 15 by the ultrasonic vibration device 16, ultrasonic waves are applied to the rotary tool 17, and the rotary tool 17 is vibrated in the rotary semidiameter direction with ultrasonic waves. Thus, the peripheral end portion 34 of the semiconductor device wafer 30 can be finished at high speed and with high accuracy. In addition, by applying ultrasonic waves to the rotary tool 17, wear of the rotary tool 17 is reduced. Thus, collapse of the peripheral end portion 34 of the semiconductor device wafer 30 after finishing can be suppressed.

[0064] The edge finishing device 10 is provided with a tool forming grinding wheel 40 that corrects the shape of the front end of the rotary tool 17. The tool forming grinding wheel 40 is, for example, a tool forming diamond grinding wheel in which a diamond grinding wheel is fixed with a ceramic bond.

[0065] The tool forming grinding wheel 40 is supported by an inclination adjustment mechanism 41 so as to be adjustable in inclination. Specifically, the grinding wheel surface of the tool forming grinding wheel 40 that contacts the front end of the rotary tool 17 can be adjusted from a substantially vertical state to an inclined state. That is, the tool forming grinding wheel 40 is supported by the inclination adjustment mechanism 41 so as to be rotatable about a support shaft 42 of the inclination adjustment mechanism 41 that extends in a substantially horizontal direction.

[0066] The grinding wheel surface of the tool forming grinding wheel 40 contacts the front end of the rotary tool 17 at a position away from the peripheral end portion 34 of the semiconductor device wafer 30, that is, the peripheral grinding wheel surface 18 of the rotary tool 17. Thus, in the edge finishing process in which the peripheral end portion 34 of the semiconductor device wafer 30 is finished, the front end of the horizontally rotating rotary tool 17 abuts against the grinding wheel surface of the tool forming grinding wheel 40 and is corrected to a shape suitable for finishing. That is, in the edge finishing process, the front end of the horizontally rotating rotary tool 17 is ground by contacting the grinding wheel surface of the tool forming grinding wheel 40.

[0067] With such a configuration, the front end shape of the rotary tool 17 that trims the outer peripheral end portion 34 of the semiconductor device wafer 30 is always maintained in an appropriate state, and high-precision and high-efficiency trimming processing can be continuously performed. Therefore, for a high-function frontmost semiconductor device wafer 30, high-yield manufacturing can be achieved and productivity can be improved.

[0068] Figure 3 is a plan view showing the schematic configuration of the edge trimming device 10.

[0069] As shown in Figure 3 , the edge trimming device 10 is provided with a photographing device 45 as an observation unit that photographs and analyzes the shape of the groove 35 after trimming. The photographing device 45 has a light source 46 that irradiates light, a light-receiving element 47 that receives light from the light source 46, and an image analysis device 48 that analyzes the shape of the groove 35 based on the optical data of the light-receiving element 47.

[0070] The light source 46 irradiates light for detecting the trimming state of the outer peripheral end portion 34 of the semiconductor device wafer 30. In detail, the light source 46 is a parallel light source that irradiates light in a manner that a portion of the parallel light is tangent to the vicinity of the outer peripheral end portion 34 of the semiconductor device wafer 30. That is, the light source 46 emits parallel light in a substantially horizontal direction toward the vicinity of the end portion of the outer peripheral end portion 34 of the semiconductor device wafer 30 from the side of the semiconductor device wafer 30.

[0071] The light-receiving element 47 is disposed opposite to the light source 46 in a manner that receives the light emitted from the light source 46. Therefore, the parallel light emitted from the light source 46 passes through the vicinity of the outer peripheral end portion 34 of the semiconductor device wafer 30 and is received by the light-receiving element 47.

[0072] The light-receiving element 47 is connected to the image analysis device 48. The image analysis device 48 analyzes the optical data received by the light-receiving element 47. In detail, the state of the outer peripheral end portion 34 of the semiconductor device wafer 30 is analyzed based on the image data 49 (refer to Figure 4 ).

[0073] Figure 4 is a view showing the image data 49 of the photographing device 45 shown in Figure 3 .

[0074] As shown in Figure 4 , the shape of the outer peripheral end portion 34 of the semiconductor device wafer 30 is accurately photographed by the photographing device 45. Then, the image analysis device 48 of the photographing device 45 analyzes the shape of the groove 35 of the semiconductor device wafer 30 based on the photographed image data 49. The manufacturing device 1 performs the tool forming grinding wheel 40 (refer to Figure 2 ) to the rotary tool 17 (refer to Figure 2correction of the front end shape of the rotary tool 17.

[0075] By such a configuration, the trimming state of the outer peripheral end portion 34 of the semiconductor device wafer 30 can be accurately grasped at all times. Therefore, the front end shape of the rotary tool 17 can be accurately corrected by the tool forming grinding wheel 40 so that the front end shape of the rotary tool 17 is always brought to an appropriate state.

[0076] For example, the average depth D of the groove 35 of the semiconductor device wafer 30 in the trimming process, that is, the average depth D of the trimming surface 36 can be accurately detected continuously by the imaging device 45. Thus, the manufacturing device 1 can form the groove 35 with an accurate average depth D.

[0077] In addition, the inclination of the trimming surface 36 of the groove 35, that is, the inclination angle A can be accurately detected by the imaging device 45. Then, analysis (evaluation) is performed by the imaging device 45 as to whether the detected inclination angle A is within an appropriate range. Thus, in a case where the inclination angle A of the trimming surface 36 is smaller than the lower limit inclination angle Al or larger than the upper limit inclination angle A2, the manufacturing device 1 can correct the inclination of the front end shape of the rotary tool 17, that is, the outer peripheral grinding wheel surface 18 (see FIG. 1). The above description is an example of correcting the inclination of the outer peripheral grinding wheel surface 18 using the inclination angle A of the trimming surface 36 as an object of analysis based on the image data taken (an evaluation index of the shape of the groove 35). Figure 2

[0078] Specifically, as shown in FIG. 2, the manufacturing device 1 adjusts the support angle of the tool forming grinding wheel 40 by the inclination adjustment mechanism 41, and trims the front end shape of the rotary tool 17 by the tool forming grinding wheel 40, whereby the inclination of the outer peripheral grinding wheel surface 18 can be corrected to an appropriate inclination. Figure 2 Thus, the inclination angle A of the trimming surface 36 can be set to an appropriate angle that is larger than the lower limit inclination angle Al and smaller than the upper limit inclination angle A2, and the trimming process of the semiconductor device wafer 30 can be advanced (see FIG. 1).

[0079] Figure 4 Thus, the edge trimming device 10 can continuously and efficiently perform high-precision trimming processing by maintaining the front end shape of the rotary tool 17 at an appropriate inclination angle A based on the shape information of the trimming surface 36 obtained by imaging and analysis by the imaging device 45, whereby the trimming surface 36 inclined at an appropriate angle can be formed at the outer peripheral end portion 34 of the semiconductor device wafer 30.

[0080] Next, with reference to ,

[0081] , Figures 5A-5D , Figure 6A and Figure 6B , and Figures 7A-7D ​A manufacturing method of a semiconductor device according to an embodiment of the present application will be described in detail.

[0082] Figures 5A-5D is a view showing a manufacturing method of a semiconductor device, Figure 5A is a view showing a state in which a semiconductor device wafer 30 is prepared in an adsorption process, Figure 5B is a view showing a state in which trimming is performed in an edge trimming process, Figure 5C is a view showing a state in which the edge trimming process is completed, Figure 5D is a view showing a state in which thinning is performed in a thinning process.

[0083] As shown in Figure 5A , the semiconductor device wafer 30 is a silicon wafer on which a semiconductor device layer 31 is formed, and has a size of, for example, 300 mm in diameter and 775 μm in thickness.

[0084] In the adsorption process, the support substrate 13 is adhered to the device surface 32 of the semiconductor device wafer 30 via the adhesive resin layer 12 by the WSS method. The adhesive resin layer 12 is formed of, for example, a silicon-based resin, and has a thickness of, for example, 40 μm. The support substrate 13 is, for example, a support wafer of a silicon-based or glass-based material, and has a thickness of, for example, 750 μm.

[0085] Next, as shown in Figure 5B , the semiconductor device wafer 30 is held to the vacuum chuck 11 via the adhesive resin layer 12 and the support substrate 13 with the device surface 32 being on the lower side.

[0086] Then, the edge trimming process is performed in the ultrasonic trimming station 23 (see Figure 1 ). In the edge trimming process, the semiconductor device wafer 30 is rotated horizontally by the vacuum chuck 11, and the outer peripheral abrasive surface 18 of the rotary tool 17, which is rotated and to which ultrasonic waves are applied, is pressed against the outer peripheral end portion 34 of the semiconductor device wafer 30. Thus, the outer peripheral end portion 34 of the semiconductor device wafer 30 is trimmed, and a groove 35 is formed.

[0087] In addition, the upper portion of the adhesive resin layer 12 can be ground together with the outer peripheral end portion 34 by the rotary tool 17. Thus, the effect of suppressing the chipping of the semiconductor device wafer 30 can be improved.

[0088] Here, the diameter of the rotary tool 17 is, for example, 100 mm, and the thickness of the outer peripheral abrasive surface 18 is, for example, 0.15 mm. The grit size of the diamond abrasive wheel of the rotary tool 17 is preferably #240 to #8000, more preferably #1000 to #3000, and further preferably #2000.

[0089] In addition, the rotational speed of the rotary tool 17 in the edge trimming process is preferably 8000 to 12000 min-1 The rotation speed of the semiconductor device wafer 30 is preferably 250 to 350 min -1 The horizontal movement speed of the vertical spindle 15 is preferably 0.3 to 0.7 mm / min.

[0090] For example, by setting the rotation speed of the rotary tool 17 to 10,000 min -1 , the rotation speed of the semiconductor device wafer 30 to 300 min -1 , and the horizontal movement speed of the vertical spindle 15 to 0.5 mm / min, the processing of the trimming surface 36 is performed for 3 minutes until the average depth D (refer to Figure 4 ) from the outer peripheral end portion 34 becomes 1.5 mm. By performing the trimming under these conditions, the semiconductor device wafer 30 having a surface roughness of 15 to 20 nm (Ra) can be obtained.

[0091] As described above, in the edge trimming process, the rotary tool 17 is horizontally rotated by the vertical spindle 15 to which the ultrasonic wave is applied. Therefore, as compared with the trimming performed by the diamond grinding wheel of the cup-shaped grinding wheel type or the like in the related art, high-speed and high-precision trimming can be performed. In addition, by applying the ultrasonic wave to the horizontally rotating rotary tool 17, the wear of the rotary tool 17 is less, and the collapse of the vicinity of the outer peripheral end portion 34 after the trimming can be suppressed.

[0092] Here, the frequency of the ultrasonic wave applied to the vertical spindle 15 from the ultrasonic vibration device 16 is, for example, 16 to 1,000 kHz. Thereby, the semiconductor device wafer 30 can be appropriately trimmed.

[0093] In addition, the semiconductor device wafer 30 is trimmed by the horizontally rotating rotary tool 17 to which the ultrasonic wave is applied, in a state where the device surface 32 is held downward with respect to the vacuum chuck 11. Therefore, in the edge trimming process, the device surface 32 is not contaminated. Thereby, the precise cleaning is not required, and the low cost of the semiconductor device can be achieved. In addition, the outer peripheral end portion 34 of the semiconductor device wafer 30 can be trimmed without being affected by various kinds of cover films such as a metal film or an insulating film formed on the surface of the device surface 32.

[0094] By the edge trimming process, the groove 35 is formed in the outer peripheral end portion 34 of the semiconductor device wafer 30, and the trimming surface 36 is formed inside the groove 35. Specifically, the thickness of the rotary tool 17 in the vicinity of the outer peripheral grinding surface 18 is thinner than the thickness of the semiconductor device wafer 30. Therefore, as shown in Figure 5C , the trimming surface 36 is recessed from the outer peripheral end portion 34. As a result, the groove 35 which is a circumferential concave portion extending in the rotation direction of the semiconductor device wafer 30 is formed in the outer peripheral end portion 34.

[0095] By forming the groove 35 at the outer peripheral end portion 34 of the semiconductor device wafer 30 through the edge trimming process, it is also possible to reduce contamination of the back surface 33 of the semiconductor device wafer 30. Therefore, in the following thinning process, it is possible to perform precise thinning processing.

[0096] In the edge trimming process, the shape of the trimmed groove 35 of the semiconductor device wafer 30 is projected with parallel light by the imaging device 45 (refer to Figure 3 ). Based on the shape of the shadow of the parallel light, it is possible to accurately analyze the shape of the groove 35. Thereby, it is possible to efficiently and accurately analyze the shape of the trimmed groove 35 of the semiconductor device wafer 30.

[0097] Then, when the shape of the trimmed groove 35 is analyzed by the imaging device 45, the manufacturing device 1 corrects the shape of the tip of the rotary tool 17 by the tool forming grinding wheel 40 so that the shape of the groove 35 in the image data 49 (refer to Figure 4 ) is within a prescribed value, for example, the inclination of the trimmed surface 36 of the groove 35, that is, the inclination angle A is within an appropriate range. Thereby, it is possible to perform continuous efficient trimming processing, and thus it is possible to obtain an accurate trimming shape with high precision. Therefore, it is possible to efficiently process the groove 35 with high precision and stable shape and surface properties.

[0098] After the edge trimming process is performed, the thinning process is sequentially performed on the rough grinding stage 25 and the fine grinding stage 27 (refer to Figure 1 ). As shown in Figure 5D , in the thinning process, one main surface, that is, the back surface 33 of the semiconductor device wafer 30 is ground by a cup-shaped grinding wheel, which is not shown, and thinning is achieved.

[0099] The cup-shaped grinding wheel used in the thinning process is, for example, a cup-shaped grinding wheel type grinding wheel using diamond abrasive grains with a particle size of #240 to #8000. It is also possible to increase the abrasive grains of the cup-shaped grinding wheel and lower the rotation speed in rough grinding, and to decrease the abrasive grains of the cup-shaped grinding wheel and increase the rotation speed in fine grinding, thereby performing grinding.

[0100] By performing the thinning process after the edge trimming process, it is possible to achieve thinning without thickness deviation, and it is possible to obtain a semiconductor device wafer 30 that is thinned with high flatness. In addition, as a chuck mechanism, it is possible to use a configuration that holds the device surface 32 by adhesion through the support substrate 13 of the adhesion resin layer 12, and thus it is possible to prevent thickness deviation of the semiconductor device wafer 30 in the thinning process. In addition, since the device surface 32 is protected by the support substrate 13, it is possible to prevent contamination and waste adhesion of the device surface 32.

[0101] Figure 6A and Figure 6Bis a view showing the vicinity of the trimmed surface 36 of the semiconductor device wafer 30. Figure 6A is a view showing the state where the edge trimming process is completed, Figure 6B is a view showing the state where thinning is performed in the thinning process.

[0102] As shown in Figure 6A and Figure 6B , the upper portion of the trimmed surface 36 of the groove 35 formed in the outer peripheral end portion 34 has a smaller diameter than the lower portion. That is, the trimmed surface 36 can be formed in the shape of the side surface of a substantially conical frustum. Specifically, the angle formed by the device surface 32 and the inclined trimmed surface 36 is, for example, 70 to 90 degrees, and is preferably about 80 degrees. In this way, by forming the trimmed surface 36 inclined in such a manner that the upper portion has a smaller diameter, the chipping of the semiconductor device wafer 30 can be further reduced.

[0103] As described above, in the edge trimming process, based on the accurate data of the shape of the groove 35 obtained by the imaging device 45 (refer to Figure 3 ), the support angle of the tool forming grinding wheel 40 (refer to Figure 2 ) can be adjusted, and the shape of the tip of the rotary tool 17 (refer to Figure 2 ) can be corrected. Thereby, the shape of the tip of the rotary tool 17 can be maintained in an appropriate inclined state at all times, and high-precision trimming processing can be continuously and efficiently performed. That is, the trimmed surface 36 inclined at an appropriate angle can be formed in the outer peripheral end portion 34 of the semiconductor device wafer 30.

[0104] Figures 7A-7D is a view showing another example of the manufacturing method of the semiconductor device. Figure 7A is a view showing the state where the semiconductor device wafer 30 is prepared in the adsorption process, Figure 7B is a view showing the state where trimming is performed in the edge trimming process, Figure 7C is a view showing the state where the edge trimming process is completed, Figure 7D is a view showing the state where thinning is performed in the thinning process. In addition, the same reference numerals are given to the constituent elements that are the same as or achieve the same effect or function as those of the already described embodiments.

[0105] As shown in Figure 7A , in the adsorption process, the protective tape 14 as a BG tape is attached to the device surface 32 of the semiconductor device wafer 30. As the protective tape 14, for example, the UV tape E8180 manufactured by LINTEC Corporation having a thickness of 180 μm is used.

[0106] Then, as shown in Figure 7B , the semiconductor device wafer 30 is held to the vacuum chuck 11 with the device surface 32 facing downward through the protective tape 14.

[0107] Next, in the edge trimming process, the semiconductor device wafer 30 is trimmed by the horizontally rotating rotary tool 17 to which ultrasonic waves are applied. As shown in FIG. 6, by the trimming, the groove 35 having the trimmed surface 36 is formed at the outer peripheral end portion 34. Figure 7C

[0108] After the edge trimming process is performed, the thinning process of grinding the back surface 33 is performed. As a result, as shown in FIG. 7, the semiconductor device wafer 30 which is thinned with high flatness and has a small thickness variation can be obtained. Figure 7D

[0109] As described above, according to the manufacturing method of the present embodiment, after the adsorbing process is performed, the edge trimming process of forming the groove 35 at the outer peripheral end portion 34 of the semiconductor device wafer 30 is performed. Then, the thinning process of thinning the semiconductor device wafer 30 is performed after the edge trimming process.

[0110] By such a process, the outer peripheral end portion 34 of the semiconductor device wafer 30 can be trimmed without being affected by various kinds of covering films such as a metal film or an insulating film formed on the surface of the device surface 32 of the semiconductor device wafer 30. In the edge trimming process, since the rotary tool 17 is horizontally rotated by the vertical main shaft 15 to which ultrasonic waves are applied, trimming with high speed and high precision can be performed.

[0111] Then, in the edge trimming process, the front end shape of the horizontally rotating rotary tool 17 is corrected to an appropriate shape by the tool forming grinding wheel 40. Thereby, the semiconductor device wafer 30 can obtain a stable trimming shape and a trimmed surface property, and can process the high-functional semiconductor device wafer 30 with high yield. That is, excellent productivity which cannot be obtained in the related art can be obtained. For example, the semiconductor device wafer 30 which is extremely thinned to a thickness of 20 μm or less can be mass-produced with high yield.

[0112] In addition, the present application is not limited to the above-described embodiments, and various modifications can be made within the scope of the present application without departing from the spirit of the present application.

[0113] The detailed description has been given for purposes of example and explanation. Numerous modifications and adaptations thereof will be apparent to those skilled in the art. The detailed description is not intended to be exhaustive or to limit the subject matter described herein to the precise forms described. Although specific features and processes are described with particularity, it should be understood that the subject matter described herein includes all modifications falling within the scope of the claims. More specifically, the detailed description is intended to be illustrative and not exclusive. Although the subject matter has been described in language specific to structural features and / or methodological acts, it is to be understood that the subject matter defined in the claims is not necessarily limited to the specific features or acts described. Rather, the specific features and acts are disclosed as example forms of implementing the claims.​​

Claims

1. A method for manufacturing a semiconductor device, characterized in that, The method for manufacturing the semiconductor device includes: The semiconductor device wafer is adsorbed onto the suction cup mechanism and the semiconductor device wafer is rotated horizontally. The rotating tool is rotated horizontally by applying ultrasonic waves to a vertical spindle. The outer peripheral end of the horizontally rotating semiconductor device wafer is trimmed by the horizontally rotating rotary cutter, thereby forming a groove at the outer peripheral end; In the dressing process, while the horizontally rotating rotary cutter is dressing the outer peripheral end of the horizontally rotating semiconductor device wafer, the tip shape of the horizontally rotating rotary cutter is corrected by a tool-forming grinding wheel; and After the dressing, a main surface of the horizontally rotating semiconductor device wafer is ground using a horizontally rotating cup-shaped grinding wheel.

2. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The method for manufacturing the semiconductor device includes: During the trimming process, the shape of the groove is photographed; The shape of the groove is analyzed based on the captured image data; and Based on the shape of the groove analyzed, the shape of the front end of the rotating tool is modified by the tool forming grinding wheel.

3. The method for manufacturing a semiconductor device according to claim 2, characterized in that, The method for manufacturing the semiconductor device includes: During the trimming process, parallel light is projected onto the groove; and The shape of the groove is analyzed based on the shape of the shadow of the parallel light.

4. A method for manufacturing a semiconductor device according to any one of claims 1 to 3, characterized in that, The method for manufacturing the semiconductor device includes: While adjusting the support angle of the grinding wheel used for tool forming, the shape of the front end of the rotating tool is corrected.

5. A semiconductor device manufacturing apparatus, characterized in that, The semiconductor device manufacturing apparatus includes a suction cup mechanism, a vertical spindle, an ultrasonic vibration device, a rotary cutting tool, and a grinding wheel for tool forming. The suction cup mechanism is configured to adsorb a semiconductor device wafer and rotate the semiconductor device wafer horizontally. The vertical spindle is configured to allow the rotary tool to rotate horizontally. The ultrasonic vibration device is configured to apply ultrasonic waves to a vertical spindle. The rotary cutter is configured to trim the outer peripheral end of the semiconductor device wafer, which is adsorbed onto the suction cup mechanism and rotating horizontally, while the vertical spindle, to which the ultrasonic waves are applied, rotates horizontally, thereby forming a groove at the outer peripheral end. The grinding wheel for forming the cutting tool is configured such that, while the horizontally rotating cutting tool is trimming the outer peripheral end of the horizontally rotating semiconductor device wafer, the front end of the rotating cutting tool is abutted against to correct the shape of the front end of the horizontally rotating cutting tool.

6. The semiconductor device manufacturing apparatus according to claim 5, characterized in that, The semiconductor device manufacturing apparatus further includes an observation unit that captures images of the shape of the groove and analyzes the shape of the groove based on the captured image data. The grinding wheel used for tool forming corrects the shape of the front end of the rotating tool based on the shape of the groove analyzed.

Images