Power modules, power systems, vehicles and photovoltaic systems

Abstract

The present application provides a power module, a power system, a vehicle and a photovoltaic system. The power module includes a first power semiconductor chip, a first temperature sensor, a first diode chip and a first circuit board. The first power semiconductor chip has a first output electrode. The first temperature sensor is located inside the first power semiconductor chip. The first cathode of the first temperature sensor is electrically connected to the first output electrode. The first diode chip is electrically connected to the first power semiconductor chip. When the first diode chip generates a reverse recovery current, a voltage is generated between the first output electrode and the first cathode. The first circuit board is used to obtain a first voltage difference between the first output electrode and the first cathode, thereby obtaining the temperature of the first diode chip. The power module in the present application can accurately and quickly detect the temperature of the first power semiconductor chip and the first diode chip.

Description

Technical Field

[0001] The present application relates to the technical field of power modules, and in particular to a power module, a power supply system, a vehicle and a photovoltaic system. Background Art

[0002] With the development of power electronics technology, power modules have attracted more and more attention. Power modules generate heat during operation. Especially when the power modules are lighter and smaller, the current density of the power modules increases, which leads to higher heat generation inside the power modules, affecting the overall thermal mechanical properties and reliability of the power modules. Therefore, when the power modules are running, it is necessary to detect the temperature of the power modules in real time to improve the reliability of the power modules. Power modules usually include power semiconductor chips and diode chips. The temperature detection of diode chips is usually ignored in the prior art. Summary of the invention

[0003] The present application provides a power module, a power system, a vehicle and a photovoltaic system that can accurately and quickly detect the temperature of a power semiconductor chip and a diode chip.

[0004] In a first aspect, the present application provides a power module, which includes a first power semiconductor chip, a first temperature sensor, a first diode chip and a first circuit board, wherein the first power semiconductor chip has a first output electrode; the first temperature sensor is located inside the first power semiconductor chip, and is used to detect the temperature of the first power semiconductor chip, and the first temperature sensor includes a first cathode, and the first cathode is electrically connected to the first output electrode; the first diode chip is electrically connected to the first power semiconductor chip, and when the first diode chip generates a reverse recovery current, a voltage is generated between the first output electrode and the first cathode; the first circuit board is electrically connected to the first output electrode and the first cathode, and the first circuit board is used to obtain a first voltage difference between the first output electrode and the first cathode, and obtain the temperature of the first diode chip based on the first voltage difference.

[0005] The first power semiconductor chip is provided with a first gate for controlling the on and off of the first power semiconductor chip, and the first power semiconductor chip may be an IGBT, a MOSFET or other power semiconductor chip. In one embodiment, the first power semiconductor chip is an IGBT chip, and the first output electrode is the emitter of the IGBT chip. In one embodiment, the first power semiconductor chip is a MOSFET chip, and the first output electrode is the source of the MOSFET chip.

[0006] The outer surface of the first temperature sensor is electrically insulated from the outer surface of the first power semiconductor chip, and the first cathode is electrically connected to the first output electrode through a connecting wire to achieve electrical connection between the first temperature sensor and the first power semiconductor chip. In one embodiment, the first temperature sensor is a diode temperature sensor. In one embodiment, the first temperature sensor is located in the main area where the first power semiconductor chip generates junction temperature. The closer the first temperature sensor is to the main area where the IGBT chip generates junction temperature, the more accurate the temperature of the first temperature sensor detected by the first temperature sensor.

[0007] The first diode chip may be used to protect the circuit. In one embodiment, the first diode chip may be an FRD chip. In other embodiments, the first diode chip may also be other diode chips. When the first diode chip is forward-conducted, the current flows from the anode of the first diode chip to the cathode of the first diode chip. When the current input to the first diode chip gradually decreases to zero, there is a reverse recovery process for the current on the first diode chip from forward conduction to cutoff. The current on the first diode chip will not immediately turn to zero, but will first change from a forward current to a larger reverse current. At this time, the current flows from the cathode of the first diode chip to the anode of the first diode chip. The reverse current gradually decreases until it drops to zero or a value close to zero. At this time, the first diode chip enters a reverse cutoff state. The part of the current that becomes zero is called the reverse recovery current. The reverse recovery current of the first diode chip flows into the first power semiconductor chip. The rate of change of the reverse recovery current is affected by the junction temperature of the first diode chip and decreases as the junction temperature increases, that is, the smaller the rate of change of the reverse recovery current, the higher the temperature of the first diode chip. Correspondingly, there is a parasitic inductance caused by the packaging structure between the first output electrode and the first cathode. The rate of change of the reverse recovery current can generate an induced voltage, that is, a first voltage difference, between the first output electrode and the first cathode.

[0008] A data acquisition and processing unit is provided on the first circuit board. The data acquisition unit acquires the first voltage difference, and the temperature of the first diode chip is obtained according to the first voltage difference through the processing unit.

[0009] In a possible implementation, the first temperature sensor further includes a first anode, the first circuit board is electrically connected to the first anode, the first circuit board obtains a second voltage difference between the first anode and the first cathode, and obtains the temperature of the first power semiconductor chip according to the second voltage difference.

[0010] By electrically connecting the first anode, the first cathode and the first output electrode to the first circuit board at the same time, on the one hand, the electrical information corresponding to the first power semiconductor chip and the first diode chip can be directly detected to obtain the temperatures of the first power semiconductor chip and the first diode chip, thereby achieving accurate and high-speed measurement results; on the other hand, the temperatures corresponding to the first power semiconductor chip and the first diode chip can be detected simultaneously, which helps to ensure the safe operation of the power module; on the other hand, this implementation method has strong compatibility and can be applicable to various types of circuits. For example, this implementation method is compatible with the three mainstream topologies of vertical bridge, horizontal bridge and BOOST.

[0011] In a possible implementation, the first power semiconductor chip further includes a first input electrode electrically connected to the anode of the first diode chip. The reverse recovery current of the first diode chip flows from the anode of the first diode chip through the first input electrode into the first power semiconductor chip.

[0012] In one embodiment, the cathode of the first diode chip is electrically connected to the first output electrode, and the reverse recovery current of the first diode chip flows from the anode of the first diode chip through the external loop and into the first power semiconductor chip through the first input electrode.

[0013] In one possible implementation, the first power semiconductor chip also includes a first input electrode, which is electrically connected to the anode of the first diode chip. The power module also includes a second diode chip and a third diode chip. The cathode of the second diode chip is electrically connected to the first input electrode. When the first power semiconductor chip is turned off, the second diode chip is used to protect the first power semiconductor chip. The cathode of the third diode chip is electrically connected to the cathode of the first diode chip, and the third diode chip is used to prevent the first diode chip from being broken down by overvoltage.

[0014] In a possible implementation manner, at least one of a via hole, a connecting wire, and a connecting metal layer is provided between the first output electrode and the first cathode.

[0015] In a possible implementation, the power module further includes a second circuit board, a first output pin and a first cathode pin, the first power semiconductor chip and the first diode chip are mounted on the second circuit board, the first output pin and the first cathode pin are mounted on the edge of the second circuit board, the first output pin is connected between the first output electrode and the first circuit board, the first cathode pin is connected between the first cathode and the first circuit board, and the first circuit board obtains the first voltage difference through the first output pin and the first cathode pin. The normalized output PIN method reduces the design and process manufacturing costs.

[0016] In one embodiment, the power module also includes a first anode pin, which is installed on the edge of the second circuit board, and the first anode pin is connected between the first anode and the first circuit board. The first circuit board obtains a second voltage difference between the first anode pin and the first cathode pin to obtain the temperature of the first power semiconductor chip.

[0017] In a possible implementation, the first power semiconductor chip also includes a first input electrode, which is electrically connected to the anode of the first diode chip; the power module also includes a second power semiconductor chip, a second diode chip and a second temperature sensor, the second power semiconductor chip has a second output electrode, and the second output electrode is electrically connected to the first input electrode; the second temperature sensor is located inside the second power semiconductor chip and is used to detect the temperature of the second power semiconductor chip, and the second temperature sensor includes a second cathode, which is electrically connected to the second output electrode; the cathode of the second diode chip is electrically connected to the second output electrode, and the cathode of the second diode chip is electrically connected to the first input electrode, and when the second diode chip generates a reverse recovery current, a voltage is generated between the second output electrode and the second cathode; the first circuit board is also electrically connected to the second output electrode and the second cathode, and the first circuit board is used to obtain the voltage difference between the second output electrode and the second cathode, and obtain the temperature of the second diode chip based on the voltage difference between the second output electrode and the second cathode.

[0018] Among them, the second power semiconductor chip is connected in series with the first power semiconductor chip, and the second power semiconductor chip is anti-parallel with the first diode chip. The first diode chip is used to protect the second power semiconductor chip. When the second power semiconductor chip is disconnected, the current in the loop changes suddenly. In order to protect the second power semiconductor chip and the circuit safety, the current in the second power semiconductor chip is released to the first diode chip, and a loop current is formed in the first diode chip to consume current and realize safe energy transfer. The direction of the loop current formed by the first diode chip is from the anode of the first diode chip to the cathode of the second diode chip, and then a reverse recovery current is formed in the first diode chip.

[0019] The second power semiconductor chip is provided with a second gate for controlling the opening and closing of the second power semiconductor chip. The second power semiconductor chip may be an IGBT, a MOSFET or other power semiconductor chip. In one embodiment, the second power semiconductor chip and the first power semiconductor chip are both IGBT chips. In one embodiment, the second power semiconductor chip and the first power semiconductor chip are both MOSFET chips. In one embodiment, one of the second power semiconductor chip and the first power semiconductor chip is a MOSFET chip, and the other is an IGBT chip.

[0020] The outer surface of the second temperature sensor is electrically insulated from the outer surface of the second power semiconductor chip, and the second cathode is electrically connected to the second output electrode through a connecting wire to achieve electrical connection between the second temperature sensor and the second power semiconductor chip. In one embodiment, the second temperature sensor is a diode temperature sensor. In one embodiment, the second temperature sensor is located in the main area where the junction temperature of the second power semiconductor chip is generated. In one embodiment, the second temperature sensor also includes a second anode, the first circuit board is electrically connected to the second anode, the first circuit board obtains the voltage difference between the second anode and the second cathode, and obtains the temperature of the second power semiconductor chip according to the voltage difference.

[0021] The second diode chip is anti-parallel connected with the first power semiconductor chip. The second diode chip is used to protect the first power semiconductor chip. When the first power semiconductor chip is disconnected, the current in the first power semiconductor chip is released to the second diode chip, forms a loop current through the second diode chip, and then forms a reverse recovery current. The reverse recovery current of the second diode chip flows into the second power semiconductor chip through an external loop, and there is a parasitic inductance between the second output electrode and the second cathode. The rate of change of the reverse recovery current can generate an induced voltage on the second output electrode and the second cathode.

[0022] In one embodiment, the first circuit board is electrically connected to the second output electrode and the second cathode, and the first circuit board obtains a voltage difference between the second output electrode and the second cathode, and obtains the temperature of the second diode chip according to the voltage difference.

[0023] In one embodiment, the power module further includes a second output pin and a second cathode pin, the second output pin and the second cathode pin are mounted on an edge of the second circuit board, the second output pin is connected between the second output electrode and the first circuit board, and the second cathode pin is connected between the second cathode and the first circuit board. The first circuit board obtains a voltage difference between the second output pin and the second cathode pin to obtain the temperature of the second diode chip.

[0024] In one embodiment, at least one of a via hole, a connection line, and a connection metal layer is provided between the second output electrode and the second cathode. Since the via hole, the connection line, and the connection metal layer have a connection function between the second output electrode and the second cathode, when the second power semiconductor chip has parasitic inductance, a parasitic voltage is generated between the second output electrode and the second cathode.

[0025] In one embodiment, the power module also includes a second anode pin, which is installed on the edge of the second circuit board, and the second anode pin is connected between the second anode and the first circuit board. The first circuit board obtains the voltage difference between the second anode pin and the second cathode pin to obtain the temperature of the second power semiconductor chip.

[0026] In one embodiment, the second power semiconductor chip further includes a second input electrode, and the second input electrode is electrically connected to the cathode of the first diode chip.

[0027] In a possible implementation, the power module further includes a third power semiconductor chip, a third diode chip and a third temperature sensor, wherein the third power semiconductor chip has a third output electrode, and the third output electrode is electrically connected to the first input electrode and the second output electrode; the third temperature sensor is located inside the third power semiconductor chip and is used to detect the temperature of the third power semiconductor chip, and the third temperature sensor includes a third cathode, and the third cathode is electrically connected to the second output electrode; the anode of the third diode chip is electrically connected to the third output electrode, and when the third diode chip generates a reverse recovery current, a voltage is generated between the third output electrode and the third cathode; the first circuit board is also electrically connected to the third output electrode and the third cathode. In one embodiment, the first circuit board is used to obtain the voltage difference between the third output electrode and the third cathode, and obtain the temperature of the third diode chip according to the voltage difference between the third output electrode and the third cathode.

[0028] The third power semiconductor chip is provided with a third gate for controlling the on and off of the third power semiconductor chip. The third power semiconductor chip also includes a third input electrode, the third power semiconductor chip is anti-parallel connected with the third diode chip, the cathode of the third diode chip is connected with the third input electrode, and the anode of the third diode chip is connected with the third output electrode.

[0029] The third diode chip is used to protect the third power semiconductor chip. When the third power semiconductor chip is disconnected, the current in the loop changes suddenly, and the current in the third power semiconductor chip is released to the third diode chip, forming a loop current in the third diode chip to consume current and achieve energy safety transfer, and then forming a reverse recovery current in the third diode chip. After passing through the external loop, the reverse recovery current flows into the third power semiconductor chip through the third input electrode. In one embodiment, the first circuit board is electrically connected to the third output electrode and the third cathode, and the first circuit board obtains the voltage difference between the third output electrode and the third cathode, and obtains the temperature of the third diode chip according to the voltage difference.

[0030] The outer surface of the third temperature sensor is electrically insulated from the outer surface of the third power semiconductor chip, and the third cathode is electrically connected to the third output electrode through a connecting wire to achieve electrical connection between the third temperature sensor and the third power semiconductor chip. In one embodiment, the third temperature sensor is a diode temperature sensor. In one embodiment, the third temperature sensor is located in the main area where the junction temperature of the third power semiconductor chip is generated. In one embodiment, the third temperature sensor also includes a third anode, the first circuit board is electrically connected to the third anode, the first circuit board obtains the voltage difference between the third anode and the third cathode, and obtains the temperature of the third power semiconductor chip according to the voltage difference.

[0031] In one embodiment, the power module further includes a third output pin, a third cathode pin and a third anode pin, the third output pin, the third cathode pin and the third anode pin are mounted on the edge of the second circuit board, the third output pin is connected between the third output electrode and the first circuit board, the third cathode pin is connected between the third cathode and the first circuit board, and the third anode pin is connected between the third anode and the first circuit board. The first circuit board obtains the voltage difference between the third output pin and the third cathode pin to obtain the temperature of the third diode chip; the first circuit board obtains the voltage difference between the third anode pin and the third cathode pin to obtain the temperature of the third power semiconductor chip.

[0032] In a possible implementation, the third power semiconductor chip further includes a third input electrode, the power module further includes a fourth power semiconductor chip, a fourth diode chip and a fourth temperature sensor, the fourth power semiconductor chip has a fourth output electrode and a fourth input electrode, the fourth input electrode is electrically connected to the third input electrode; the fourth temperature sensor is located inside the fourth power semiconductor chip, and is used to detect the temperature of the fourth power semiconductor chip, the fourth temperature sensor includes a fourth cathode, and the fourth cathode is electrically connected to the fourth output electrode; the anode of the fourth diode chip is electrically connected to the fourth output electrode, and when the fourth diode chip generates a reverse recovery current, a voltage is generated between the fourth output electrode and the fourth cathode; the first circuit board is also electrically connected to the fourth output electrode and the fourth cathode. In one embodiment, the first circuit board is used to obtain the voltage difference between the fourth output electrode and the fourth cathode, and obtain the temperature of the fourth diode chip according to the voltage difference between the fourth output electrode and the fourth cathode.

[0033] The fourth power semiconductor chip is provided with a fourth gate for controlling the on and off of the fourth power semiconductor chip. The fourth power semiconductor chip also includes a fourth input electrode, the fourth power semiconductor chip is anti-parallel connected with the fourth diode chip, the cathode of the fourth diode chip is connected with the fourth input electrode, and the anode of the fourth diode chip is connected with the fourth output electrode.

[0034] The fourth diode chip is used to protect the fourth power semiconductor chip. When the fourth power semiconductor chip is disconnected, the current in the loop changes suddenly, and the current in the fourth power semiconductor chip is released to the fourth diode chip, forming a loop current in the fourth diode chip to consume current and achieve energy safety transfer, and then forming a reverse recovery current in the fourth diode chip. After passing through the external loop, the reverse recovery current flows into the fourth power semiconductor chip through the fourth input electrode. In one embodiment, the first circuit board is electrically connected to the fourth output electrode and the fourth cathode, and the first circuit board obtains the voltage difference between the fourth output electrode and the fourth cathode, and obtains the temperature of the fourth diode chip according to the voltage difference.

[0035] The outer surface of the fourth temperature sensor is electrically insulated from the outer surface of the fourth power semiconductor chip, and the fourth cathode is electrically connected to the fourth output electrode through a connecting wire to achieve electrical connection between the fourth temperature sensor and the fourth power semiconductor chip. In one embodiment, the fourth temperature sensor is a diode temperature sensor. In one embodiment, the fourth temperature sensor is located in the main area where the junction temperature of the fourth power semiconductor chip is generated. In one embodiment, the fourth temperature sensor also includes a fourth anode, the first circuit board is electrically connected to the fourth anode, the first circuit board obtains the voltage difference between the fourth anode and the fourth cathode, and obtains the temperature of the fourth power semiconductor chip according to the voltage difference.

[0036] In one embodiment, the power module further includes a fourth output pin, a fourth cathode pin and a fourth anode pin, the fourth output pin, the fourth cathode pin and the fourth anode pin are mounted on the edge of the second circuit board, the fourth output pin is connected between the fourth output electrode and the first circuit board, the fourth cathode pin is connected between the fourth cathode and the first circuit board, and the fourth anode pin is connected between the fourth anode and the first circuit board. The first circuit board obtains the voltage difference between the fourth output pin and the fourth cathode pin to obtain the temperature of the fourth diode chip; the first circuit board obtains the voltage difference between the fourth anode pin and the fourth cathode pin to obtain the temperature of the fourth power semiconductor chip.

[0037] In a possible implementation, the first power semiconductor chip also includes a first input electrode, and the cathode of the first diode chip is connected to the first input electrode. The power module also includes a second power semiconductor chip, a second diode chip, and a second temperature sensor. The second power semiconductor chip has a second output electrode and a second input electrode, and the second input electrode is electrically connected to the first input electrode. The second temperature sensor is located inside the second power semiconductor chip and is used to detect the temperature of the second power semiconductor chip. The second temperature sensor includes a second cathode, and the second cathode is electrically connected to the second output electrode. The cathode of the second diode chip is electrically connected to the second input electrode, and when the second diode chip generates a reverse recovery current, a voltage is generated between the second output electrode and the second cathode. The first circuit board is also electrically connected to the second output electrode and the second cathode, and the first circuit board is used to obtain the voltage difference between the second output electrode and the second cathode, and obtain the temperature of the second diode chip based on the voltage difference between the second output electrode and the second cathode.

[0038] The second power semiconductor chip is connected in anti-parallel with the second diode chip, and the second diode chip is used to protect the second power semiconductor chip. When the second power semiconductor chip is disconnected, the current in the loop changes suddenly, and the current in the second power semiconductor chip is released to the second diode chip, forming a loop current in the second diode chip, and then forming a reverse recovery current in the second diode chip. After passing through the external loop, the reverse recovery current flows into the second power semiconductor chip through the second input electrode. In one embodiment, the first circuit board is electrically connected to the second output electrode and the second cathode, and the first circuit board obtains the voltage difference between the second output electrode and the second cathode, and obtains the temperature of the second diode chip according to the voltage difference.

[0039] The first diode chip is anti-parallel connected to the first power semiconductor chip, the cathode of the first diode chip is connected to the first input electrode, and the anode of the first diode chip is connected to the first output electrode. The first diode chip is used to protect the first power semiconductor chip. When the first power semiconductor chip is disconnected, the current in the first power semiconductor chip is released to the first diode chip, and a loop current is formed in the first diode chip to consume current and achieve safe energy transfer, and then a reverse recovery current is formed on the first diode chip. After passing through an external loop, the reverse recovery current flows into the first power semiconductor chip through the first input electrode, and the temperature of the first diode chip is obtained by measuring the first output electrode and the first cathode.

[0040] In one embodiment, the power module further includes a second output pin and a second cathode pin, the second output pin and the second cathode pin are mounted on an edge of the second circuit board, the second output pin is connected between the second output electrode and the first circuit board, and the second cathode pin is connected between the second cathode and the first circuit board. The first circuit board obtains a voltage difference between the second output pin and the second cathode pin to obtain the temperature of the second diode chip.

[0041] In one embodiment, the power module also includes a second anode pin, which is installed on the edge of the second circuit board, and the second anode pin is connected between the second anode and the first circuit board. The first circuit board obtains the voltage difference between the second anode pin and the second cathode pin to obtain the temperature of the second power semiconductor chip.

[0042] In a possible implementation, the anode of the first diode chip is connected to the first output electrode, and the power module also includes a second power semiconductor chip, a second diode chip and a second temperature sensor, the second power semiconductor chip has a second output electrode, and the second output electrode is electrically connected to the first output electrode; the second temperature sensor is located inside the second power semiconductor chip, and is used to detect the temperature of the second power semiconductor chip, and the second temperature sensor includes a second cathode, and the second cathode is electrically connected to the second output electrode; the anode of the second diode chip is electrically connected to the second output electrode, and when the second diode chip generates a reverse recovery current, a voltage is generated between the second output electrode and the second cathode; the first circuit board is also electrically connected to the second output electrode and the second cathode, and the first circuit board is used to obtain the voltage difference between the second output electrode and the second cathode, and obtain the temperature of the second diode chip according to the voltage difference between the second output electrode and the second cathode.

[0043] In a second aspect, the present application provides a power supply system, which includes a power supply, an electrical device and a power module as described in any one of the above items, wherein the power supply is connected to an input end of the power module, and the electrical device is connected to an output end of the power module.

[0044] In a third aspect, the present application provides a vehicle, comprising a vehicle body and a power supply system as described above, wherein the power supply system is mounted on the vehicle body.

[0045] In a fourth aspect, the present application provides a photovoltaic system, comprising a photovoltaic component and a power module as described in any one of the above items, wherein the photovoltaic component is electrically connected to the power module, and the direct current generated by the photovoltaic component is converted into alternating current through the power module.

[0046] In the present application, by setting the temperature sensor and the pins of the power semiconductor chip, the electrical information corresponding to the power semiconductor chip and the diode chip can be directly detected, so as to obtain the temperature of the power semiconductor chip and the diode chip, and achieve accurate and high-speed measurement effect; and in the present application, the temperatures corresponding to the power semiconductor chip and the diode chip can be detected at the same time, which helps to ensure the safe operation of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments of the present application will be described below.

[0048] Figure 1 is a schematic diagram of a power supply system provided by an embodiment of the present application;

[0049] Figure 2 is a schematic diagram of a vehicle provided by an embodiment of the present application;

[0050] Figure 3 is a schematic diagram of a photovoltaic system provided by one embodiment of the present application;

[0051] Figure 4 is a schematic diagram of a power module provided in the first embodiment of the present application;

[0052] Figure 5 is a schematic diagram of a recovery process of a diode chip direction provided by an embodiment of the present application;

[0053] Figure 6 is a schematic diagram of a circuit board and a chip provided in one embodiment of the present application;

[0054] Figure 7 is a schematic diagram of a power module provided in the second embodiment of the present application;

[0055] Figure 8 is a schematic diagram of a power module provided in the third embodiment of the present application;

[0056] Fig. 9 is a schematic diagram of a power module provided in a fourth embodiment of the present application;

[0057] Fig.10 is a schematic diagram of a power module provided in the fifth embodiment and the sixth embodiment of the present application;

[0058] Fig.11 is a schematic diagram of a power module provided in the seventh embodiment of the present application;

[0059] Fig.12 is a schematic diagram of a Boost circuit provided in one embodiment of the present application;

[0060] Fig.13 is a schematic diagram of a Boost circuit provided in one embodiment of the present application;

[0061] Fig.14 is a schematic diagram of a Boost circuit provided in one embodiment of the present application;

[0062] Fig.15 It is a schematic diagram of a pin layout provided in one embodiment of the present application. DETAILED DESCRIPTION

[0063] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0064] In this document, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0065] In addition, in this article, directional terms such as "upper" and "lower" are defined relative to the orientation of the structure schematically placed in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they can change accordingly according to the change of the orientation of the structure.

[0066] For ease of understanding, the English abbreviations and related technical terms involved in the embodiments of the present application are explained and described below.

[0067] IGBT: It is the abbreviation of Insulated Gate Bipolar Transistor, which refers to insulated gate bipolar transistor.

[0068] FRD: It is the abbreviation of Fast Recovery Diode, which refers to fast recovery diode.

[0069] MOSFET: The abbreviation of Metal-Oxide-Semiconductor Field-Effect Transistor, refers to metal-oxide semiconductor field effect transistor, also known as MOS tube.

[0070] Pin, also known as pin, is called PIN in English. It refers to the connection between the internal circuit of the integrated circuit (chip) and the peripheral circuit. All the pins constitute the interface of the chip.

[0071] See also Figure 1In one embodiment of the present application, a power supply system 1 is provided. The power supply system 1 includes a power supply 11, an electrical device 12 and a power module 10. The power supply 11 is connected to an input terminal 101 of the power module 10, and the electrical device 12 is connected to an output terminal 102 of the power module 10. The power module 10 is a semiconductor device that converts the voltage, current, frequency, etc. of the power supply 11, and is a core device for power conversion in a power supply circuit. For example, the power supply system 1 can be used as a core device for converting DC to AC in a motor control unit of an electric vehicle, as a battery of an electric vehicle to output DC power, or to convert DC power into AC power required for vehicle operation. The power module 10 can also be called a power device. In one embodiment, power electronic devices can form a power module 10 after being encapsulated according to a certain functional combination. Different power modules 10 play different roles in different circuit systems, such as voltage conversion, inversion, rectification, frequency conversion, etc.

[0072] Exemplarily, the current input to the power module 10 may be high voltage DC, which is converted into low voltage DC by the power module 10 . The power module may realize the conversion from high voltage DC to low voltage DC, thereby supplying power to the electrical device 12 .

[0073] For example, the low-voltage direct current generated by the photovoltaic panel is converted into 220V alternating current after being inverted by the power module 10, and the 220V alternating current can power household appliances.

[0074] In one embodiment, in order to prevent physical damage and chemical corrosion of the power module 10 during use, the power module 10 will be packaged. Commonly used packaging methods include Housing packaging, Molding packaging and SOP packaging, etc. After the power module 10 is packaged, pins for external connection will be provided, so that the power module 10 can be electrically connected more conveniently.

[0075] See also Figure 2 The power system 1 of the present application can be applied to a vehicle 2, wherein the vehicle 2 includes a vehicle body 21 and the power system 1 as described above, and the power system 1 is installed on the vehicle body 21. The power system 1 provides a power source for the vehicle 2. The power system 1 in the present application has a high power density, and can be applied to the vehicle 2 to improve the power performance of the vehicle 2. The vehicle 2 includes a car (such as Figure 2As shown), in other embodiments, the vehicle 2 includes an electric vehicle or a special operation vehicle, the electric vehicle includes a two-wheeled, three-wheeled or four-wheeled electric vehicle, and the special operation vehicle includes various vehicles with specific functions, such as engineering rescue vehicles, water trucks, sewage suction trucks, cement mixers, cranes, and medical vehicles. In this embodiment, the power supply 11 is a battery in the vehicle 2, and the power-consuming device 12 is a motor in the vehicle 2. In some embodiments, the power supply system 1 includes an inverter (not shown in the figure), and the inverter is provided with a power module 10 and a control circuit (not shown in the figure). The control circuit is electrically connected to the power module 10, and the control circuit can control the performance parameters of the alternating current output by the power module 10 to the motor according to the needs of the vehicle 2, such as voltage, current, frequency, frequency, etc.

[0076] See also Figure 3 The power module 10 of the present application can also be used in a photovoltaic system 3, which includes a photovoltaic module 31 and a power module 10. The photovoltaic module 31 is electrically connected to the power module 10, and the direct current generated by the photovoltaic module 31 is converted into alternating current through the power module 10. The alternating current output by the power module 10 is transmitted to power-consuming equipment, such as a base station, a data center, etc.

[0077] The photovoltaic assembly 31 includes at least one photovoltaic panel 32, and the photovoltaic panel 32 is connected to the power module 10. In one embodiment, the photovoltaic assembly 31 includes a plurality of photovoltaic panels 32 connected in series, and the DC power of the plurality of photovoltaic panels 32 is collected in series and connected to the power module 10 through a connector. In some embodiments, the photovoltaic system 3 includes an inverter (not shown in the figure), and the inverter is provided with a power module 10 and a control circuit (not shown in the figure), and the control circuit is electrically connected to the power module 10. The control circuit can control the performance parameters of the AC power output by the power module 10 according to the needs of the electrical equipment, such as voltage, current, frequency, etc.

[0078] The power module 10 will inevitably generate heat during operation, especially when the power module 10 is more lightweight and miniaturized, the increase in the current density of the power module 10 will cause a higher amount of heat to be generated inside the power module 10, thereby causing an increase in the junction temperature. In one embodiment, in order to prevent physical damage and chemical corrosion of the power module 10 during use, the power module 10 will be packaged. Commonly used packaging methods include Housing packaging, Molding packaging, and SOP packaging. The loss heat generated by the power module 10 during operation is more difficult to discharge in a highly integrated package. If the heat generated by the power module 10 cannot be discharged in time, on the one hand, the higher junction temperature will affect the overall thermal mechanical properties and reliability of the power module 10, causing the power module 10 to be burned or broken down, and causing the problem of failure of the power module 10; on the other hand, the heating phenomenon will increase the power consumption of the power module 10, and it is expected to reduce the transmission performance of the power module 10. Therefore, when the power module 10 is running, it is necessary to detect the temperature of the power module 10 in real time to improve the reliability of the operation of the power module 10.

[0079] The power module 10 generally includes a power semiconductor chip and a diode chip. If the power semiconductor chip and the diode chip generate heat or are burned or broken down, the energy efficiency of the power module 10 will be affected. In the prior art, thermistors are generally used to monitor the temperature of the power semiconductor chip and the diode chip. If two thermistors are provided to monitor the temperature of the power semiconductor chip and the diode chip respectively, since the thermistor is generally at a certain distance from the power semiconductor chip or the diode chip, the temperature information detected by the thermistor has a certain error and delay compared with the actual temperature. When the temperature sensor is used to calibrate the thermistor, a through hole needs to be dug under the power semiconductor chip and the diode chip so as to fit the temperature sensor under the power semiconductor chip and the diode chip. This method makes the structure of the power module 10 more complicated, places higher requirements on the processing technology, and increases the design and manufacturing costs. At the same time, although the detection results of the thermistor and the temperature sensor are both measuring the same object, since the accuracy and measurement bandwidth of the thermistor and the sensor are not consistent, algorithm optimization is also required in the calibration, which increases the difficulty of data processing. If only one thermistor is set to monitor the temperature of the power semiconductor chip and the diode chip at the same time, the temperature detected by the thermistor is the coupled information of the temperature of the power semiconductor chip and the diode chip, and cannot accurately reflect the temperature of the power semiconductor chip and the temperature of the diode chip respectively. In addition, the temperature measurement method for the power semiconductor chip and the diode chip in the prior art has a narrow application range and cannot be applied to a variety of circuits.

[0080] Example 1

[0081] See also Figure 4The first embodiment of the present application provides a power module 10, which includes a first power semiconductor chip T1, a first temperature sensor Dt1, a first diode chip D1 and a first circuit board. The first power semiconductor chip T1 has a first output electrode E1; the first temperature sensor Dt1 is located inside the first power semiconductor chip and is used to detect the temperature T1 of the first power semiconductor chip. The first temperature sensor Dt1 includes a first cathode KE1, which is electrically connected to the first output electrode E1; the first diode chip D1 is electrically connected to the first power semiconductor chip T1, and when the first diode chip D1 generates a reverse recovery current, an induced voltage is generated between the first output electrode E1 and the first cathode KE1 on the first power semiconductor chip T1; the first circuit board B1 is electrically connected to the first output electrode E1 and the first cathode KE1, and the first circuit board B1 obtains a first voltage difference V between the first output electrode E1 and the first cathode KE1 EKE , and according to the first voltage difference V EKE The temperature of the first diode chip D1 is obtained.

[0082] The first power semiconductor chip T1 is provided with a first gate G1 for controlling the on and off of the first power semiconductor chip T1. The first power semiconductor chip T1 may be an IGBT, a MOSFET or other power semiconductor chip. In one embodiment, the first power semiconductor chip T1 is an IGBT chip, and the first output electrode E1 is the emitter of the IGBT chip. In one embodiment, the first power semiconductor chip T1 is a MOSFET chip, and the first output electrode E1 is the source of the MOSFET chip.

[0083] The outer surface of the first temperature sensor Dt1 is electrically insulated from the outer surface of the first power semiconductor chip T1, and the first cathode KE1 is electrically connected to the first output electrode E1 through a connecting wire to realize the electrical connection between the first temperature sensor Dt1 and the first power semiconductor chip T1. In one embodiment, the first temperature sensor Dt1 is a diode temperature sensor. Compared with a thermistor, a diode temperature sensor measures the temperature of the power semiconductor chip more accurately, and the resistance of the diode temperature sensor itself is not affected by temperature changes, which is more accurate for measuring the temperature of the diode chip. In one embodiment, the first temperature sensor Dt1 is located in the main area where the junction temperature of the first power semiconductor chip T1 is generated. The closer the first temperature sensor Dt1 is to the main area where the junction temperature of the IGBT chip is generated, the more accurate the temperature of the first temperature sensor Dt1 detected by the first temperature sensor Dt1.

[0084] The first diode chip D1 can be used to protect the circuit. In one embodiment, the first diode chip D1 can be an FRD chip. In other embodiments, the first diode chip D1 can also be other diode chips. When the first diode chip D1 is forward-conducted, the current flows from the anode of the first diode chip D1 to the cathode of the first diode chip D1. When the current input to the first diode chip D1 gradually decreases to zero, the current on the first diode chip D1 undergoes a reverse recovery process from forward conduction to cutoff. The current on the first diode chip D1 will not immediately turn to zero, but will first change from the forward current IF to a larger reverse current IR (such as Figure 5 As shown), at this time, the current flows from the cathode of the first diode chip D1 to the anode of the first diode chip D1, and the reverse current IR gradually decreases until it drops to zero or a value close to zero. At this time, the first diode chip D1 enters the reverse cut-off state. The part of the current that changes from IR to zero is called the reverse recovery current. The reverse recovery current of the first diode chip D1 flows into the first power semiconductor chip T1. The change rate of the reverse recovery current is affected by the junction temperature of the first diode chip D1 and decreases as the junction temperature increases, that is, the smaller the change rate of the reverse recovery current, the higher the temperature of the first diode chip D1. Correspondingly, there is a parasitic inductance caused by the packaging structure between the first output electrode E1 and the first cathode KE1. The change rate of the reverse recovery current can generate an induced voltage, that is, a first voltage difference V, on the first output electrode E1 and the first cathode KE1. EKE .

[0085] The first circuit board B1 is provided with a data acquisition and processing unit, and the data acquisition unit acquires the first voltage difference V EKE , and the processing unit is based on the first voltage difference V EKE The temperature of the first diode chip D1 is obtained.

[0086] In a possible implementation, the first temperature sensor Dt1 further includes a first anode TSNR1, the first circuit board B1 is electrically connected to the first anode TSNR1, and the first circuit board B1 obtains a second voltage difference V between the first anode TSNR1 and the first cathode KE1. AK , and according to the second voltage difference V AK The temperature of the first power semiconductor chip T1 is obtained.

[0087] In this embodiment, the first anode TSNR1, the first cathode KE1 and the first output electrode E1 are electrically connected to the first circuit board B1 at the same time. On the one hand, the electrical information corresponding to the first power semiconductor chip T1 and the first diode chip D1 is directly detected, so as to obtain the temperature of the first power semiconductor chip T1 and the first diode chip D1, and accurate and high-speed measurement effect can be achieved; on the other hand, the temperatures corresponding to the first power semiconductor chip T1 and the first diode chip D1 can be detected at the same time, which helps to ensure the safe operation of the power module 10; on the other hand, this embodiment has strong compatibility and can be applied to various types of circuits. For example, this embodiment is compatible with the three mainstream topologies of vertical bridge, horizontal bridge and BOOST.

[0088] See also Figure 6 In a possible implementation, the power module 10 further includes a second circuit board B2, a first output pin E1' and a first cathode pin KE1', the first power semiconductor chip T1 and the first diode chip D1 are mounted on the second circuit board B2, the first output pin E1' and the first cathode pin KE1' are mounted on the edge of the second circuit board B2, the first output pin E1' is connected between the first output electrode E1 and the first circuit board B1, the first cathode pin KE1' is connected between the first cathode KE1 and the first circuit board B1, and the first circuit board B1 obtains a first voltage difference V between the first output pin E1' and the first cathode pin KE1' EKE The temperature of the first diode chip D1 is obtained. The normalized PIN output method is adopted to reduce the design and process manufacturing costs.

[0089] In one embodiment, the power module 10 further includes a first anode pin TSNR1', the first anode pin TSNR1' is mounted on an edge of the second circuit board B2, the first anode pin TSNR1' is connected between the first anode TSNR1 and the first circuit board B1, and the first circuit board B1 obtains a second voltage difference V between the first anode pin TSNR1' and the first cathode pin KE1' AK , to obtain the temperature of the first power semiconductor chip T1.

[0090] In a possible implementation, at least one of a via hole, a connecting wire, and a connecting metal layer is provided between the first output electrode E1 and the first cathode KE1. The via hole is a via hole passing through the first power semiconductor chip T1; the connecting wire is a metal wire on the outer surface of the first power semiconductor chip T1, such as an aluminum wire AL (such as Figure 6The connecting metal layer is a metal layer located in the first power semiconductor chip T1, and it plays a connecting role. When there is a parasitic inductance on the first power semiconductor chip T1, a parasitic inductance voltage will be generated on these connected components. Among them, the via, the connecting wire or the connecting metal layer can be arranged between the first output electrode E1 and the first cathode KE1 as needed.

[0091] In a possible implementation, the first power semiconductor chip T1 further includes a first input electrode, and the first input electrode is electrically connected to the anode of the first diode chip D1 (eg, Figure 4 ). The reverse recovery current of the first diode chip D1 flows from the anode of the first diode chip D1 through the first input electrode into the first power semiconductor chip T1.

[0092] In one embodiment, the cathode of the first diode chip D1 is electrically connected to the first output electrode E1, and the reverse recovery current of the first diode chip D1 flows from the anode of the first diode chip D1 through the external loop and into the first power semiconductor chip T1 through the first input electrode.

[0093] Example 2

[0094] See also Figure 7 The second embodiment of the present application provides a power module 10, which is different from the first embodiment in that the power module 10 also includes a second power semiconductor chip T2, a second diode chip D2 and a second temperature sensor Dt2, the second power semiconductor chip T2 has a second output electrode E2, and the second output electrode E2 is electrically connected to the first input electrode; the second temperature sensor Dt2 is located inside the second power semiconductor chip T2, and is used to detect the temperature of the second power semiconductor chip T2, the second temperature sensor Dt2 includes a second cathode KE2, and the second cathode KE2 is electrically connected to the second output electrode E2; the cathode of the second diode chip D2 is electrically connected to the second output electrode E2, and the cathode of the second diode chip D2 is electrically connected to the first input electrode, and when the second diode chip D2 generates a reverse recovery current, a voltage is generated between the second output electrode E2 and the second cathode KE2 on the second power semiconductor chip T2.

[0095] in, Figure 7The circuit in is a vertical bridge topology circuit, the second power semiconductor chip T2 is connected in series with the first power semiconductor chip T1, the second power semiconductor chip T2 is anti-parallel with the first diode chip D1, the first diode chip D1 is used to protect the second power semiconductor chip T2, when the second power semiconductor chip T2 is disconnected, the current in the loop changes suddenly, in order to protect the second power semiconductor chip T2 and the circuit safety, the current in the second power semiconductor chip T2 is released to the first diode chip D1, and a loop current is formed in the first diode chip D1 to consume current and realize energy safe transfer, the direction of the loop current formed by the first diode chip D1 is from the anode of the first diode chip D1 to the cathode of the second diode chip D2, and then a reverse recovery current is formed in the first diode chip D1.

[0096] The second power semiconductor chip T2 is provided with a second gate G2 for controlling the opening and closing of the second power semiconductor chip T2. The second power semiconductor chip T2 may be an IGBT, a MOSFET or other power semiconductor chip. In one embodiment, the second power semiconductor chip T2 and the first power semiconductor chip T1 are both IGBT chips. In one embodiment, the second power semiconductor chip T2 and the first power semiconductor chip T1 are both MOSFET chips. In one embodiment, one of the second power semiconductor chip T2 and the first power semiconductor chip T1 is a MOSFET chip, and the other is an IGBT chip.

[0097] The outer surface of the second temperature sensor Dt2 is electrically insulated from the outer surface of the second power semiconductor chip T2, and the second cathode KE2 is electrically connected to the second output electrode E2 through a connecting wire to realize the electrical connection between the second temperature sensor Dt2 and the second power semiconductor chip T2. In one embodiment, the second temperature sensor Dt2 is a diode temperature sensor. Compared with a thermistor, the diode temperature sensor measures the temperature of the power semiconductor chip more accurately, and the resistance of the diode temperature sensor itself is not affected by temperature changes, which is more accurate for measuring the temperature of the diode chip. In one embodiment, the second temperature sensor Dt2 is located in the main area where the junction temperature of the second power semiconductor chip T2 is generated. In one embodiment, the second temperature sensor Dt2 also includes a second anode TSNR2, and the first circuit board B1 is electrically connected to the second anode TSNR2. The first circuit board B1 obtains the voltage difference between the second anode TSNR2 and the second cathode KE2, and obtains the temperature of the second power semiconductor chip T2 according to the voltage difference.

[0098] The second diode chip D2 is anti-parallel connected with the first power semiconductor chip T1. The second diode chip D2 is used to protect the first power semiconductor chip T1. When the first power semiconductor chip T1 is disconnected, the current in the loop changes suddenly. In order to protect the first power semiconductor chip T1 and the circuit safety, the current in the first power semiconductor chip T1 is released to the second diode chip D2, and forms a loop current through the second diode chip D2 to consume current and realize energy safe transfer. The direction of the loop current formed by the second diode chip D2 is from the anode of the second diode chip D2 to the cathode of the second diode chip D2. When the loop current gradually decreases to zero, The current on the second diode chip D2 will not turn to zero immediately, but will first change from a forward current to a reverse current. At this time, the reverse current flows from the cathode of the second diode chip D2 to the anode of the second diode chip D2. The reverse current gradually decreases until it drops to zero or a value close to zero. At this time, the second diode chip D2 enters a reverse cut-off state. The reverse recovery current of the second diode chip D2 flows into the second power semiconductor chip T2 through an external loop, and there is a parasitic inductance between the second output electrode E2 and the second cathode KE2. The rate of change of the reverse recovery current can generate an induced voltage on the second output electrode E2 and the second cathode KE2.

[0099] In one embodiment, the first circuit board B1 is electrically connected to the second output electrode E2 and the second cathode KE2, and the first circuit board B1 obtains the voltage difference between the second output electrode E2 and the second cathode KE2, and obtains the temperature of the second diode chip D2 according to the voltage difference.

[0100] In one embodiment, the power module 10 further includes a second output pin E2' and a second cathode pin KE2', the second output pin E2' and the second cathode pin KE2' are mounted on the edge of the second circuit board B2, the second output pin E2' is connected between the second output electrode E2 and the first circuit board B1, and the second cathode pin KE2' is connected between the second cathode KE2 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the second output pin E2' and the second cathode pin KE2' to obtain the temperature of the second diode chip D2.

[0101] In one embodiment, at least one of a via hole, a connection line, and a connection metal layer is provided between the second output electrode E2 and the second cathode KE2. Since there is a via hole, a connection line, and a connection metal layer with a connection function between the second output electrode E2 and the second cathode KE2, when the second power semiconductor chip T2 has a parasitic inductance, a parasitic voltage is generated between the second output electrode E2 and the second cathode KE2.

[0102] In one embodiment, the power module 10 also includes a second anode pin TSNR2', which is installed on the edge of the second circuit board B2. The second anode pin TSNR2' is connected between the second anode TSNR2 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the second anode pin TSNR2' and the second cathode pin KE2' to obtain the temperature of the second power semiconductor chip T2.

[0103] In one embodiment, the second power semiconductor chip T2 further includes a second input electrode, and the second input electrode is electrically connected to the cathode of the first diode chip D1.

[0104] When the power module 10 is used to convert direct current into alternating current, a SW port is formed between the first power semiconductor chip T1 and the second power semiconductor chip T2. The SW port is the output end of the power module 10. The SW port is electrically connected to the second output electrode E2 and the first input electrode; the second input electrode is connected to the positive electrode DC+ of the DC bus; and the first output electrode E1 is connected to the negative electrode DC- of the DC bus. Both the first power semiconductor chip T1 and the second power semiconductor chip T2 input direct current. When the second power semiconductor chip T2 is turned on and the first power semiconductor chip T1 is turned off, the SW port outputs a "positive level". When the first power semiconductor chip T1 is turned on and the second power semiconductor chip T2 is turned off, the SW port outputs a "negative level". By controlling the alternating on and off of the first power semiconductor chip T1 and the second power semiconductor chip T2, direct current is converted into alternating current. In the process of alternating on and off of the first power semiconductor chip T1 and the second power semiconductor chip T2, the first anode pin TSNR1', the first cathode pin KE1', the first output pin E1', the second anode pin TSNR2', the second cathode pin KE2' and the second output pin E2' are set to obtain the temperatures of the first power semiconductor chip T1, the first diode chip D1, the second power semiconductor chip T2 and the second diode chip D2, so as to achieve accurate and high-speed measurement effect, which helps to ensure the safe operation of the power module 10.

[0105] Example 3

[0106] See also Figure 8The third embodiment of the present application provides a power module 10, which is different from the first embodiment in that the first power semiconductor chip T1 also includes a first input electrode, and the cathode of the first diode chip D1 is connected to the first input electrode. The power module 10 also includes a second power semiconductor chip T2, a second diode chip D2 and a second temperature sensor Dt2. The second power semiconductor chip T2 has a second output electrode E2 and a second input electrode, and the second input electrode is electrically connected to the first input electrode; the second temperature sensor Dt2 is located inside the second power semiconductor chip T2 and is used to detect the temperature of the second power semiconductor chip T2. The second temperature sensor Dt2 includes a second cathode KE2, and the second cathode KE2 is electrically connected to the second output electrode E2; the cathode of the second diode chip D2 is electrically connected to the second input electrode E2, and when the second diode chip D2 generates a reverse recovery current, a voltage is generated between the second output electrode E2 and the second cathode KE2 of the second power semiconductor chip T2.

[0107] in, Figure 8 The circuit in is a cross-bridge topology circuit. In one embodiment, the second power semiconductor chip T2 and the first power semiconductor chip T1 are both IGBT chips, and the second power semiconductor chip T2 and the first power semiconductor chip T1 are connected to a common collector. In one embodiment, the second power semiconductor chip T2 and the first power semiconductor chip T1 are both MOSFET chips, and the second power semiconductor chip T2 and the first power semiconductor chip T1 are connected to a common drain. In other embodiments, the second power semiconductor chip T2 and the first power semiconductor chip T1 can also be other active power semiconductor devices.

[0108] The second power semiconductor chip T2 is provided with a second gate G2 for controlling the opening and closing of the second power semiconductor chip T2. The second power semiconductor chip T2 is anti-parallel connected with the second diode chip D2, the cathode of the second diode chip D2 is connected to the second input electrode, and the anode of the second diode chip D2 is connected to the second output electrode E2. The second diode chip D2 is used to protect the second power semiconductor chip T2. When the second power semiconductor chip T2 is disconnected, the current in the circuit changes suddenly. In order to protect the second power semiconductor chip T2 and the circuit safety, the current in the second power semiconductor chip T2 is released to the second diode chip D2, and a loop current is formed in the second diode chip D2 to consume current and realize energy safe transfer, and then a reverse recovery current is formed in the second diode chip D2. The reverse recovery current passes through an external circuit (such as Figure 8After passing through the dotted line in the figure, the voltage flows into the second power semiconductor chip T2 through the second input electrode. In one embodiment, the first circuit board B1 is electrically connected to the second output electrode E2 and the second cathode KE2, and the first circuit board B1 obtains the voltage difference between the second output electrode E2 and the second cathode KE2, and obtains the temperature of the second diode chip D2 according to the voltage difference.

[0109] The outer surface of the second temperature sensor Dt2 is electrically insulated from the outer surface of the second power semiconductor chip T2, and the second cathode KE2 is electrically connected to the second output electrode E2 through a connecting wire to realize the electrical connection between the second temperature sensor Dt2 and the second power semiconductor chip T2. In one embodiment, the second temperature sensor Dt2 is a diode temperature sensor. In one embodiment, the second temperature sensor Dt2 is located in the main area where the junction temperature of the second power semiconductor chip T2 is generated. In one embodiment, the second temperature sensor Dt2 also includes a second anode TSNR2, and the first circuit board B1 is electrically connected to the second anode TSNR2. The first circuit board B1 obtains the voltage difference between the second anode TSNR2 and the second cathode KE2, and obtains the temperature of the second power semiconductor chip T2 according to the voltage difference.

[0110] The first diode chip D1 is anti-parallel connected with the first power semiconductor chip T1. The cathode of the first diode chip D1 is connected to the first input electrode, and the anode of the first diode chip D1 is connected to the first output electrode E1. The first diode chip D1 is used to protect the first power semiconductor chip T1. When the first power semiconductor chip T1 is disconnected, the current in the loop changes suddenly. In order to protect the first power semiconductor chip T1 and the circuit safety, the current in the first power semiconductor chip T1 is released to the first diode chip D1, and a loop current is formed in the first diode chip D1 to consume current and realize energy safety transfer. Then, a reverse recovery current is formed on the first diode chip D1. The reverse recovery current passes through an external loop (such as Figure 8 After the dotted line in the figure), it flows into the first power semiconductor chip T1 through the first input electrode, and the temperature of the first diode chip D1 is obtained by measuring the first output electrode E1 and the first cathode KE1.

[0111] In one embodiment, the power module 10 further includes a second output pin E2' and a second cathode pin KE2', the second output pin E2' and the second cathode pin KE2' are mounted on the edge of the second circuit board B2, the second output pin E2' is connected between the second output electrode E2 and the first circuit board B1, and the second cathode pin KE2' is connected between the second cathode KE2 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the second output pin E2' and the second cathode pin KE2' to obtain the temperature of the second diode chip D2.

[0112] In one embodiment, the power module 10 also includes a second anode pin TSNR2', which is installed on the edge of the second circuit board B2. The second anode pin TSNR2' is connected between the second anode TSNR2 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the second anode pin TSNR2' and the second cathode pin KE2' to obtain the temperature of the second power semiconductor chip T2.

[0113] The second input electrode is connected to the first input electrode to form a COM port; the second output electrode E2 forms a SWL port; and the first output electrode E1 forms a SWN port.

[0114] Example 4

[0115] See also Fig. 9 The fourth embodiment of the present application provides a power module 10, which is different from the first embodiment in that the anode of the first diode chip D1 is connected to the first output electrode E1, and the power module 10 also includes a second power semiconductor chip T2, a second diode chip D2 and a second temperature sensor Dt2. The second power semiconductor chip T2 has a second output electrode E2, and the second output electrode E2 is electrically connected to the first output electrode E1; the second temperature sensor Dt2 is located inside the second power semiconductor chip T2 and is used to detect the temperature of the second power semiconductor chip T2. The second temperature sensor Dt2 includes a second cathode KE2, and the second cathode KE2 is electrically connected to the second output electrode E2; the anode of the second diode chip D2 is electrically connected to the second output electrode E2, and when the second diode chip D2 generates a reverse recovery current, a voltage is generated between the second output electrode E2 and the second cathode KE2 on the second power semiconductor chip T2.

[0116] The second power semiconductor chip T2 has a second input electrode, and a second gate G2 is provided on the second power semiconductor chip T2 for controlling the opening and closing of the second power semiconductor chip T2. The second power semiconductor chip T2 is anti-parallel connected with the second diode chip D2, the cathode of the second diode chip D2 is connected to the second input electrode, and the anode of the second diode chip D2 is connected to the second output electrode E2. The second diode chip D2 is used to protect the second power semiconductor chip T2. When the second power semiconductor chip T2 is disconnected, the current in the circuit changes suddenly. In order to protect the second power semiconductor chip T2 and the circuit safety, the current in the second power semiconductor chip T2 is released to the second diode chip D2, and a loop current is formed in the second diode chip D2 to consume current and realize energy safe transfer, and then a reverse recovery current is formed in the second diode chip D2. The reverse recovery current passes through an external circuit (such as Figure 8After passing through the dotted line in the figure, the voltage flows into the second power semiconductor chip T2 through the second input electrode. In one embodiment, the first circuit board B1 is electrically connected to the second output electrode E2 and the second cathode KE2, and the first circuit board B1 obtains the voltage difference between the second output electrode E2 and the second cathode KE2, and obtains the temperature of the second diode chip D2 according to the voltage difference.

[0117] In one embodiment, the second power semiconductor chip T2 and the first power semiconductor chip T1 are both IGBT chips, and the second power semiconductor chip T2 and the first power semiconductor chip T1 are connected to a common emitter. In one embodiment, the second power semiconductor chip T2 and the first power semiconductor chip T1 are both MOSFET chips, and the second power semiconductor chip T2 and the first power semiconductor chip T1 are connected to a common source.

[0118] The outer surface of the second temperature sensor Dt2 is electrically insulated from the outer surface of the second power semiconductor chip T2, and the second cathode KE2 is electrically connected to the second output electrode E2 through a connecting wire to realize the electrical connection between the second temperature sensor Dt2 and the second power semiconductor chip T2. In one embodiment, the second temperature sensor Dt21 is a diode temperature sensor. In one embodiment, the second temperature sensor Dt2 is located in the main area where the junction temperature of the second power semiconductor chip T2 is generated. In one embodiment, the second temperature sensor Dt2 also includes a second anode TSNR2, and the first circuit board B1 is electrically connected to the second anode TSNR2. The first circuit board B1 obtains the voltage difference between the second anode TSNR2 and the second cathode KE2, and obtains the temperature of the second power semiconductor chip T2 according to the voltage difference.

[0119] The first diode chip D1 is anti-parallel connected with the first power semiconductor chip T1. The cathode of the first diode chip D1 is connected to the first input electrode, and the anode of the first diode chip D1 is connected to the first output electrode E1. The first diode chip D1 is used to protect the first power semiconductor chip T1. When the first power semiconductor chip T1 is disconnected, the current in the loop changes suddenly. In order to protect the first power semiconductor chip T1 and the circuit safety, the current in the first power semiconductor chip T1 is released to the first diode chip D1, and a loop current is formed in the first diode chip D1 to consume current and realize energy safety transfer. Then, a reverse recovery current is formed on the first diode chip D1. The reverse recovery current passes through an external loop (such as Figure 8 After the dotted line in the figure), it flows into the first power semiconductor chip T1 through the first input electrode, and the temperature of the first diode chip D1 is obtained by measuring the first output electrode E1 and the first cathode KE1.

[0120] In one embodiment, the power module 10 further includes a second output pin E2' and a second cathode pin KE2', the second output pin E2' and the second cathode pin KE2' are mounted on the edge of the second circuit board B2, the second output pin E2' is connected between the second output electrode E2 and the first circuit board B1, and the second cathode pin KE2' is connected between the second cathode KE2 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the second output pin E2' and the second cathode pin KE2' to obtain the temperature of the second diode chip D2.

[0121] In one embodiment, the power module 10 also includes a second anode pin TSNR2', which is installed on the edge of the second circuit board B2. The second anode pin TSNR2' is connected between the second anode TSNR2 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the second anode pin TSNR2' and the second cathode pin KE2' to obtain the temperature of the second power semiconductor chip T2.

[0122] The second output electrode E2 is connected to the first output electrode E1 to form a COM port; the second input electrode forms a SWL port; and the first input electrode forms a SWN port.

[0123] Example 5

[0124] See also Fig.10 The fifth embodiment of the present application provides a power module 10, which is different from the second embodiment in that the power module 10 also includes a third power semiconductor chip T3, a third diode chip D3 and a third temperature sensor Dt3. The third power semiconductor chip T3 has a third output electrode E3, and the third output electrode E3 is electrically connected to the first input electrode and the second output electrode E2; the third temperature sensor Dt3 is located inside the third power semiconductor chip T3, and is used to detect the temperature of the third power semiconductor chip T3. The third temperature sensor Dt3 includes a third cathode KE3, and the third cathode KE3 is electrically connected to the second output electrode E3; the anode of the third diode chip D3 is electrically connected to the third output electrode E3, and when the third diode chip D3 generates a reverse recovery current, an induced voltage is generated between the third output electrode E3 generated on the third power semiconductor chip T3 and the third cathode KE3.

[0125] The third power semiconductor chip T3 is provided with a third gate G3 for controlling the on and off of the third power semiconductor chip T3. The third power semiconductor chip T3 also includes a third input electrode. The third power semiconductor chip T3 is anti-parallel connected with the third diode chip D3. The cathode of the third diode chip D3 is connected to the third input electrode, and the anode of the third diode chip D3 is connected to the third output electrode E3.

[0126] The third diode chip D3 is used to protect the third power semiconductor chip T3. When the third power semiconductor chip T3 is disconnected, the current in the loop changes suddenly. In order to protect the third power semiconductor chip T3 and the circuit safety, the current in the third power semiconductor chip T3 is released to the third diode chip D3, and a loop current is formed in the third diode chip D3 to consume current and achieve energy safety transfer. Then, a reverse recovery current is formed in the third diode chip D3. After passing through the external loop, the reverse recovery current flows into the third power semiconductor chip T3 through the third input electrode. In one embodiment, the first circuit board B1 is electrically connected to the third output electrode E3 and the third cathode KE3. The first circuit board B1 obtains the voltage difference between the third output electrode E3 and the third cathode KE3, and obtains the temperature of the third diode chip D3 according to the voltage difference.

[0127] The outer surface of the third temperature sensor Dt3 is electrically insulated from the outer surface of the third power semiconductor chip T3, and the third cathode KE3 is electrically connected to the third output electrode E3 through a connecting wire to realize the electrical connection between the third temperature sensor Dt3 and the third power semiconductor chip T3. In one embodiment, the third temperature sensor Dt31 is a diode temperature sensor. In one embodiment, the third temperature sensor Dt3 is located in the main area where the junction temperature of the third power semiconductor chip T3 is generated. In one embodiment, the third temperature sensor Dt3 also includes a third anode TSNR3, and the first circuit board B1 is electrically connected to the third anode TSNR3. The first circuit board B1 obtains the voltage difference between the third anode TSNR3 and the third cathode KE3, and obtains the temperature of the third power semiconductor chip T3 according to the voltage difference.

[0128] In one embodiment, the power module 10 further includes a third output pin E3', a third cathode pin KE3' and a third anode pin TSNR3', the third output pin E3', the third cathode pin KE3' and the third anode pin TSNR3' are installed at the edge of the second circuit board B2, the third output pin E3' is connected between the third output electrode E3 and the first circuit board B1, the third cathode pin KE3' is connected between the third cathode KE3 and the first circuit board B1, and the third anode pin TSNR3' is connected between the third anode TSNR3 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the third output pin E3' and the third cathode pin KE3' to obtain the temperature of the third diode chip D3; the first circuit board B1 obtains the voltage difference between the third anode pin TSNR3' and the third cathode pin KE3' to obtain the temperature of the third power semiconductor chip T3.

[0129] Example 6

[0130] See also Fig.10The sixth embodiment of the present application provides a power module 10, which is different from the fifth embodiment in that the third power semiconductor chip T3 also includes a third input electrode, and the power module 10 also includes a fourth power semiconductor chip T4, a fourth diode chip D4 and a fourth temperature sensor Dt4. The fourth power semiconductor chip T4 has a fourth input electrode and a fourth output electrode E4, and the fourth input electrode is electrically connected to the third input electrode; the fourth temperature sensor Dt4 is located inside the fourth power semiconductor chip T4 and is used to detect the temperature of the fourth power semiconductor chip T4. The fourth temperature sensor Dt4 includes a fourth cathode KE4, and the fourth cathode KE4 is electrically connected to the fourth output electrode E4; the anode of the fourth diode chip D4 is electrically connected to the fourth output electrode E4, and when the fourth diode chip D4 generates a reverse recovery current, an induced voltage is generated between the fourth output electrode E4 and the fourth cathode KE4 on the fourth power semiconductor chip T4.

[0131] The fourth power semiconductor chip T4 is provided with a fourth gate G4 for controlling the on and off of the fourth power semiconductor chip T4. The fourth power semiconductor chip T4 also includes a fourth input electrode. The fourth power semiconductor chip T4 is anti-parallel connected with the fourth diode chip D4. The cathode of the fourth diode chip D4 is connected to the fourth input electrode. The anode of the fourth diode chip D4 is connected to the fourth output electrode E4.

[0132] The fourth diode chip D4 is used to protect the fourth power semiconductor chip T4. When the fourth power semiconductor chip T4 is disconnected, the current in the loop changes suddenly. In order to protect the fourth power semiconductor chip T4 and the circuit safety, the current in the fourth power semiconductor chip T4 is released to the fourth diode chip D4, and a loop current is formed in the fourth diode chip D4 to consume current and achieve energy safety transfer. Then, a reverse recovery current is formed in the fourth diode chip D4. After passing through the external loop, the reverse recovery current flows into the fourth power semiconductor chip T4 through the fourth input electrode. In one embodiment, the first circuit board B1 is electrically connected to the fourth output electrode E4 and the fourth cathode KE4. The first circuit board B1 obtains the voltage difference between the fourth output electrode E4 and the fourth cathode KE4, and obtains the temperature of the fourth diode chip D4 according to the voltage difference.

[0133] The outer surface of the fourth temperature sensor Dt4 is electrically insulated from the outer surface of the fourth power semiconductor chip T4, and the fourth cathode KE4 is electrically connected to the fourth output electrode E4 through a connecting wire to realize the electrical connection between the fourth temperature sensor Dt4 and the fourth power semiconductor chip T4. In one embodiment, the fourth temperature sensor Dt4 is a diode temperature sensor. In one embodiment, the fourth temperature sensor Dt4 is located in the main area where the junction temperature of the fourth power semiconductor chip T4 is generated. In one embodiment, the fourth temperature sensor Dt4 also includes a fourth anode TSNR4, and the first circuit board B1 is electrically connected to the fourth anode TSNR4. The first circuit board B1 obtains the voltage difference between the fourth anode TSNR4 and the fourth cathode KE4, and obtains the temperature of the fourth power semiconductor chip T4 according to the voltage difference.

[0134] In one embodiment, the power module 10 further includes a fourth output pin E4', a fourth cathode pin KE4' and a fourth anode pin TSNR4', the fourth output pin E4', the fourth cathode pin KE4' and the fourth anode pin TSNR4' are installed at the edge of the second circuit board B2, the fourth output pin E4' is connected between the fourth output electrode E4 and the first circuit board B1, the fourth cathode pin KE4' is connected between the fourth cathode KE4 and the first circuit board B1, and the fourth anode pin TSNR4' is connected between the fourth anode TSNR4 and the first circuit board B1. The first circuit board B1 obtains the voltage difference between the fourth output pin E4' and the fourth cathode pin KE4' to obtain the temperature of the fourth diode chip D4; the first circuit board B1 obtains the voltage difference between the fourth anode pin TSNR4' and the fourth cathode pin KE4' to obtain the temperature of the fourth power semiconductor chip T4.

[0135] In one embodiment, when the horizontal bridge topology is used in conjunction with the vertical bridge topology, the power module 10 is used to convert direct current into alternating current, the input voltage at the second input electrode is a positive voltage DC+ of Vdc, the input voltage at the first output electrode E1 is a negative voltage DC- of -Vdc, the input voltage at the fourth input electrode is 0, the output port is a SW port, and the switching of all switch states of the power semiconductor chips in the power module 10 is a cyclic process. The on and off states of the power semiconductor chips in the power module 10 are shown in Table 1, where "√" indicates on and "×" indicates off.

[0136] Table 1 The on and off status of the power semiconductor chip (T2 of the vertical bridge and T4 / T3 of the horizontal bridge cannot be turned on at the same time)

[0137]

[0138] The commutation process of the power module 10 may be:

[0139] The first step is to turn on the second power semiconductor chip T2, turn off the first power semiconductor chip T1, the third power semiconductor chip T3 and the fourth power semiconductor chip T4, and the current flows from the DC+ terminal into the second power semiconductor chip T2 and is output from the output port SW, and the output voltage is Vdc. At this time, the temperature of the second power semiconductor chip T2 can be obtained by measuring the voltage difference between the second anode pin TSNR2' and the second cathode pin KE2';

[0140] The second step is to turn off the second power semiconductor chip T2, turn on the fourth power semiconductor chip T4, keep the first power semiconductor chip T1 and the third power semiconductor chip T3 turned off, and the current flows from the 0 end through the fourth power semiconductor chip T4 and the third diode chip D3 to the output port SW, and the output voltage is 0. At this time, the temperature of the fourth power semiconductor chip T4 can be obtained by measuring the voltage difference between the fourth anode pin TSNR4' and the fourth cathode pin KE4'.

[0141] Step 3: Turn on the first power semiconductor chip T1, turn off the fourth power semiconductor chip T4, keep the second power semiconductor chip T2 and the third power semiconductor chip T3 turned off, and the output voltage is -Vdc. The current flows in from the output port SW and is output from the DC-terminal. At this time, the first power semiconductor chip T1 changes from the off state to the on state, and the reverse recovery current of D3 flows into T1. By measuring the voltage difference between the first output pin E1' and the first cathode pin KE1', the temperature of the third diode chip D3 can be obtained. At the same time, by measuring the voltage difference between the first cathode pin KE1' and the first anode pin TSNR1', the temperature of the first power semiconductor chip T1 can be obtained;

[0142] Step 4: turn off the first power semiconductor chip T1, turn on the third power semiconductor chip T3, keep the second power semiconductor chip T2 and the fourth power semiconductor chip T4 turned off, and the current flows from the SW terminal into the third power semiconductor chip T3 and the fourth diode chip D4 and outputs from the 0 terminal. The output voltage is 0. At this time, by measuring the voltage difference between the third anode pin TSNR3' and the third cathode pin KE3', the temperature of the third power semiconductor chip T3 can be inferred.

[0143] The fifth step is to turn off the third power semiconductor chip T3 and turn on the second power semiconductor chip T2, keeping the first power semiconductor chip T1 and the fourth power semiconductor chip T4 turned off. The current flows from the DC+ terminal into the second power semiconductor chip T2 and is output from the output port SW. The output voltage is Vdc. At this time, the second power semiconductor chip T2 changes from the off state to the on state, and the reverse recovery current of D4 flows into T2. The temperature of the fourth diode chip D4 is obtained by measuring the voltage difference between the second output pin E2' and the second cathode pin KE2'. At the same time, the temperature of the second power semiconductor chip T2 can be obtained by measuring the voltage difference between the second anode pin TSNR2' and the second cathode pin KE2'.

[0144] Repeat the above steps to switch the output voltage of the power module 10 among Vdc, 0, -Vdc, 0, and Vdc. The setting of the cross-bridge circuit increases a level of the power module 10, and the output voltage of the power module 10 can better approach the sinusoidal output voltage.

[0145] The working process of the power module 10 is not limited to the above. In other implementations, the "0" terminal can also be other values, and by adding multiple cross bridges, the power module 10 can increase more levels.

[0146] Example 7

[0147] See also Fig.11 The seventh embodiment of the present application provides a power module 10, which is different from the first embodiment in that the first power semiconductor chip T1 also includes a first input electrode, which is electrically connected to the anode of the first diode chip D1. The power module 10 also includes a second diode chip D2 and a third diode chip D3. The cathode of the second diode chip D2 is electrically connected to the first input electrode. When the first power semiconductor chip T1 is turned off, the second diode chip D2 is used to protect the first power semiconductor chip T1; the cathode of the third diode chip D3 is electrically connected to the cathode of the first diode chip D1, and the third diode chip D3 is used to prevent the first diode chip D1 from being broken down by overvoltage.

[0148] The first input electrode of the first power semiconductor chip T1 is connected to the anode of the first diode chip D1 to form a BST port; the first output electrode E1 of the first power semiconductor chip T1 is connected to the negative electrode DC- of the DC bus; the cathode of the first diode chip D1 is connected to the positive electrode DC+ of the DC bus, and the anode of the third diode chip D3 forms a BYS port. By measuring the second voltage difference V between the first anode TSNR1 and the first cathode KE1 AK , and according to the second voltage difference V AKThe temperature of the first power semiconductor chip T1 is obtained by measuring a first voltage difference V between the first output electrode E1 and the first cathode KE1. EKE The temperature of the first diode chip D1 is obtained.

[0149] The second diode chip D2 is anti-parallel connected to the first IGBT chip T1, that is, the cathode of the second diode chip D2 is connected to the first input electrode, and the anode of the second diode chip D2 is electrically connected to the first output electrode E1. The second diode chip D2 is used to protect the circuit. When the first power semiconductor chip T1 changes from an on state to an off state, a loop is formed through the second diode chip D2 to consume current and achieve safe energy transfer.

[0150] In one embodiment, the third diode chip D3 is a high voltage diode, which is connected in parallel with the first diode chip D1, and the cathode of the third diode chip D3 is connected to the cathode of the first diode chip D1, and the third diode chip D3 is used to prevent the first diode chip D1 from being broken down by overvoltage.

[0151] When the power module 10 is used in a Boost circuit, Fig.12 As shown, the Boost circuit also includes an inductor L, which is electrically connected to the first input electrode and the anode of the first diode chip D1. The Boost circuit is a boost circuit that can make the output voltage Vout higher than the input voltage Vin. The first diode chip D1 is a boost diode. When the first power semiconductor chip T1 is turned on, the input voltage Vin charges the inductor L, and the current forms a loop through the inductor L and the first power semiconductor chip T1 (such as Fig.13 As shown), the current flows from the collector of the first power semiconductor chip T1 to the emitter of the first power semiconductor chip T1, and no current flows through the first diode chip D1; when the first power semiconductor chip T1 is disconnected, the current forms a loop through the inductor L and the first diode chip D1 (as shown Fig.14As shown), the input voltage Vin is discharged to the load through the first diode chip D1, and the energy stored in the inductor L is also discharged to the load through the first diode chip D1. The superposition of the two is the output voltage Vout, and the voltage is boosted. At this time, the current flows from the anode of the first diode chip D1 to the cathode of the first diode chip D1; when the first power semiconductor chip T1 is turned on again, the current forms a loop through the inductor L and the first power semiconductor chip T1. After the current in the first diode chip D1 decreases to zero, a reverse recovery current is generated. The reverse recovery current flows from the cathode of the first diode chip D1 to the anode of the first diode chip D1. The reverse recovery current can flow into the first power semiconductor chip T1. At this time, the temperature of the first diode chip D1 can be inferred by measuring the voltage difference between pin E and pin KE, and the temperature of the first power semiconductor chip T1 can be obtained by measuring the voltage difference between the first output electrode E1 and the first cathode KE1.

[0152] See also Fig.15 In one embodiment, the power module 10 includes a vertical bridge topology, a horizontal bridge topology, and a Boost topology, and the three topologies can all use the same PIN layout method. The pins are named in the order of the electrical ports corresponding to the vertical bridge, horizontal bridge, and Boost topologies. This PIN layout method is compatible with the above three commonly used topologies, and only the corresponding wiring method needs to be changed inside the module. This PIN layout method reduces the custom packaging cost of various topologies, and each pin can be fully utilized. In one embodiment, an NC pin will be left empty in the Boost topology.

[0153] The power module and power supply system provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and embodiments of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for general technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific embodiments and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A power module, characterized in that: The power module comprises: A first power semiconductor chip having a first output electrode; A first temperature sensor, located inside the first power semiconductor chip, for detecting the temperature of the first power semiconductor chip, wherein the first temperature sensor comprises a first cathode, and the first cathode is electrically connected to the first output electrode; a first diode chip, electrically connected to the first power semiconductor chip, wherein when the first diode chip generates a reverse recovery current, a voltage is generated between the first output electrode and the first cathode; a first circuit board, the first circuit board being electrically connected to the first output electrode and the first cathode, and the first circuit board being used to obtain a first voltage difference between the first output electrode and the first cathode, and to obtain a temperature of the first diode chip according to the first voltage difference; The first temperature sensor also includes a first anode, the first circuit board is electrically connected to the first anode, the first circuit board obtains a second voltage difference between the first anode and the first cathode, and obtains the temperature of the first power semiconductor chip according to the second voltage difference.

2. The power module according to claim 1, characterized in that: At least one of a via hole, a connecting line, and a connecting metal layer is provided between the first output electrode and the first cathode.

3. The power module according to claim 1, characterized in that: The power module also includes a second circuit board, a first output pin and a first cathode pin. The first power semiconductor chip and the first diode chip are mounted on the second circuit board. The first output pin and the first cathode pin are mounted on the edge of the second circuit board. The first output pin is connected between the first output electrode and the first circuit board. The first cathode pin is connected between the first cathode and the first circuit board. The first circuit board obtains the first voltage difference through the first output pin and the first cathode pin.

4. The power module according to any one of claims 1 to 3, characterized in that: The first power semiconductor chip further includes a first input electrode, which is electrically connected to the anode of the first diode chip; the power module further includes a second power semiconductor chip, a second diode chip and a second temperature sensor: A second power semiconductor chip has a second output electrode, wherein the second output electrode is electrically connected to the first input electrode; a second temperature sensor, located inside the second power semiconductor chip, and used to detect the temperature of the second power semiconductor chip, wherein the second temperature sensor comprises a second cathode, and the second cathode is electrically connected to the second output electrode; a second diode chip, wherein a cathode of the second diode chip is electrically connected to the second output electrode, and a cathode of the second diode chip is electrically connected to the first input electrode, and when the second diode chip generates a reverse recovery current, a voltage is generated between the second output electrode and the second cathode; The first circuit board is also electrically connected to the second output electrode and the second cathode, and is used to obtain the voltage difference between the second output electrode and the second cathode, and obtain the temperature of the second diode chip according to the voltage difference between the second output electrode and the second cathode.

5. The power module according to any one of claims 1 to 3, characterized in that: The first power semiconductor chip further includes a first input electrode, a cathode of the first diode chip is connected to the first input electrode, and the power module further includes a second power semiconductor chip, a second diode chip and a second temperature sensor: A second power semiconductor chip has a second output electrode and a second input electrode, wherein the second input electrode is electrically connected to the first input electrode; a second temperature sensor, located inside the second power semiconductor chip, and used to detect the temperature of the second power semiconductor chip, wherein the second temperature sensor comprises a second cathode, and the second cathode is electrically connected to the second output electrode; a second diode chip, wherein a cathode of the second diode chip is electrically connected to the second input electrode, and when the second diode chip generates a reverse recovery current, a voltage is generated between the second output electrode and the second cathode; The first circuit board is also electrically connected to the second output electrode and the second cathode, and is used to obtain the voltage difference between the second output electrode and the second cathode, and obtain the temperature of the second diode chip according to the voltage difference between the second output electrode and the second cathode.

6. The power module according to any one of claims 1 to 3, characterized in that: The anode of the first diode chip is connected to the first output electrode, and the power module further includes a second power semiconductor chip, a second diode chip and a second temperature sensor: A second power semiconductor chip has a second output electrode, wherein the second output electrode is electrically connected to the first output electrode; a second temperature sensor, located inside the second power semiconductor chip, and used to detect the temperature of the second power semiconductor chip, wherein the second temperature sensor comprises a second cathode, and the second cathode is electrically connected to the second output electrode; a second diode chip, wherein an anode of the second diode chip is electrically connected to the second output electrode, and when the second diode chip generates a reverse recovery current, a voltage is generated between the second output electrode and the second cathode; The first circuit board is also electrically connected to the second output electrode and the second cathode, and is used to obtain the voltage difference between the second output electrode and the second cathode, and obtain the temperature of the second diode chip according to the voltage difference between the second output electrode and the second cathode.

7. The power module according to any one of claims 1 to 3, characterized in that: The first power semiconductor chip further includes a first input electrode, the first input electrode being electrically connected to the anode of the first diode chip, and the power module further includes a second diode chip and a third diode chip: a second diode chip, wherein a cathode of the second diode chip is electrically connected to the first input electrode, and when the first power semiconductor chip is turned off, the second diode chip is used to protect the first power semiconductor chip; A third diode chip, wherein a cathode of the third diode chip is electrically connected to a cathode of the first diode chip, and the third diode chip is used to prevent the first diode chip from being broken down by overvoltage.

8. A power supply system, characterized in that: The power supply system comprises a power supply, an electrical device and a power module as described in any one of claims 1 to 7, wherein the power supply is connected to an input end of the power module, and the electrical device is connected to an output end of the power module.

9. A vehicle, characterized in that: The vehicle includes a vehicle body and the power supply system according to claim 8, wherein the power supply system is mounted on the vehicle body.

10. A photovoltaic system, characterized in that: It comprises a photovoltaic component and a power module as claimed in any one of claims 1 to 7, wherein the photovoltaic component is electrically connected to the power module, and the direct current generated by the photovoltaic component is converted into alternating current through the power module.

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