Composite structure and packaging architecture

Abstract

The present invention provides a composite structure, comprising: a first metal layer, a ceramic layer and a second metal layer. The ceramic layer has a first surface and an opposite second surface. The ceramic layer is suitable for absorbing electromagnetic waves. The ceramic layer has an absorption response range of 100 MHz to 400 GHz for electromagnetic waves. The first metal layer has an opening, and the opening exposes the second surface. The inner side wall of the first metal layer surrounds the opening. The orthographic projection of the second metal layer on the ceramic layer at least partially overlaps the orthographic projection of the opening on the ceramic layer. The ceramic layer is sandwiched between the first metal layer and the second metal layer. The thickness ratio of the first metal layer to the second metal layer is 1:1 to 1:2, and the area ratio of the first metal layer to the second metal layer is 1:1.2 to 1:4. The present invention also proposes a packaging structure including a composite structure. The composite structure provided by the present invention has good heat dissipation effect and electromagnetic wave absorption effect.

Description

Technical Field

[0001] The invention relates to a composite layer and a package body containing the composite layer, and in particular to a composite structure suitable for heat dissipation and noise absorption and a package structure containing the composite layer. Background Art

[0002] With the continuous development of the electronic information industry, the operating frequency and speed of electronic component processors are constantly increasing. The heat generated by high-frequency and high-speed electronic components increases significantly, causing the temperature to rise. In addition, when electronic components are running at high frequency and high speed, the electromagnetic noise interference generated will also increase. Therefore, the performance of electronic components during operation will be affected. In order to ensure that electronic components can operate normally, it is necessary to reduce the heat and electromagnetic noise interference that affect electronic components in a timely manner.

[0003] As the heat and electromagnetic interference emitted by existing electronic components are becoming increasingly stronger, a packaging structure that can solve the heat dissipation and reduce electromagnetic noise is an urgent problem to be solved in the technical field. Summary of the invention

[0004] The invention provides a composite structure, which has good heat dissipation effect and electromagnetic wave absorption effect.

[0005] The present invention provides a packaging structure, which has good heat dissipation, electromagnetic noise reduction and good electronic performance and quality.

[0006] The composite structure of the present invention comprises a first metal layer, a ceramic layer and a second metal layer. The ceramic layer has a first surface and an opposite second surface. The ceramic layer is suitable for absorbing electromagnetic waves, and the ceramic layer has an absorption response range of 100 MHz to 400 GHz for electromagnetic waves. The first metal layer is arranged on the second surface. The first metal layer has an opening, and the opening exposes the second surface of the ceramic layer. The inner side wall of the first metal layer surrounds the opening. The second metal layer is arranged on the first surface. The orthographic projection of the second metal layer on the ceramic layer at least partially overlaps the orthographic projection of the opening on the ceramic layer. The ceramic layer is sandwiched between the first metal layer and the second metal layer. The ratio of the thickness of the first metal layer to the second metal layer is 1:1 to 1:2. The ratio of the area of ​​the first metal layer to the second metal layer is 1:1.2 to 1:4.

[0007] The packaging architecture of the present invention includes a substrate, a composite structure and a chip. The composite structure is arranged on the substrate. The composite structure is arranged on the substrate, and a storage space is formed between the composite structure and the substrate. The composite structure includes a ceramic layer, a first metal layer and a second metal layer. The ceramic layer has a first surface and an opposite second surface. The ceramic layer is suitable for absorbing electromagnetic waves. The ceramic layer has a groove, and the groove overlaps the storage space. The first metal layer is arranged on the second surface, the first metal layer has an opening, and the opening exposes the second surface of the ceramic layer. The inner side wall of the first metal layer surrounds the opening. The second metal layer is arranged on the first surface, wherein the orthographic projection of the second metal layer on the ceramic layer at least partially overlaps the orthographic projection of the opening on the ceramic layer. The chip is arranged on the substrate and is located in the storage space. The chip is coupled to the ceramic layer of the composite structure in the groove. The thermal expansion coefficient of the chip matches the thermal expansion coefficient of the ceramic layer of the composite structure.

[0008] Based on the above, the composite structure of one embodiment of the present invention and the packaging architecture including the same, since the composite structure includes a ceramic layer that absorbs electromagnetic waves and a first metal layer and a second metal layer on both surfaces of the ceramic layer, the composite structure can not only absorb electromagnetic waves, but also reflect external electromagnetic waves. Thereby, the composite structure can have the technical effects of anti-noise and noise reduction. In addition, the second metal layer can also dissipate the heat energy transmitted by the ceramic layer. Therefore, the composite structure can have good heat dissipation effect and electromagnetic wave absorption effect at the same time. In addition, since the thermal expansion coefficient of the ceramic layer can match the thermal expansion coefficient of the chip, the variation difference between the chip and the ceramic layer can be reduced and the warping can be reduced. In this way, the reliability of the packaging architecture can be increased. Therefore, the packaging architecture using the composite structure has good heat dissipation, electromagnetic noise reduction, and good electronic performance and quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 FIG. 4 is a cross-sectional schematic diagram of a packaging structure according to an embodiment of the present invention.

[0010] Figure 2 is a cross-sectional schematic diagram of a packaging structure according to another embodiment of the present invention.

[0011] Figure 3 is a cross-sectional schematic diagram of a packaging structure according to another embodiment of the present invention.

[0012] Figure 4 FIG. 4 is a cross-sectional schematic diagram of a packaging structure according to another embodiment of the present invention.

[0013] Figure 5 FIG. 4 is a cross-sectional schematic diagram of a packaging structure according to another embodiment of the present invention.

[0014] Figure 6 FIG. 4 is a cross-sectional schematic diagram of a microstructure according to an embodiment of the present invention. DETAILED DESCRIPTION

[0015] In order to make the above features and advantages of the present invention more clearly understood, the following embodiments are specifically described with reference to the accompanying drawings. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. For example, the relative size, thickness and position of each film layer, region and / or structure may be reduced or enlarged for clarity.

[0016] The terms "first", "second", etc. in the present specification may be used herein to describe various elements, components, regions, layers and / or parts, but these elements, components, regions, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, the "first element", "component", "region", "layer", or "part" discussed below is used to distinguish from the "second element", "component", "region", "layer", or "part", rather than to limit the order or specific elements, components, regions, layers and / or parts.

[0017] Secondly, the words "include", "including", "have", etc. used in this article are all open terms, that is, including but not limited to.

[0018] In the present invention, the various embodiments described below may be mixed and matched without departing from the spirit and scope of the present invention. For example, some features of one embodiment may be combined with some features of another embodiment to form another embodiment.

[0019] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and descriptions to indicate the same or similar parts. The present invention may also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness of the areas used to indicate elements or film layers in the drawings is exaggerated for clarity. The same or similar reference numbers represent the same or similar elements, and the following paragraphs will not be repeated one by one. In addition, the directional terms mentioned in the embodiments, such as: up, down, left, right, front or back, etc., are only references to the directions of the accompanying drawings. Therefore, the directional terms used are used to illustrate and are not used to limit the present invention.

[0020] Figure 1 1 is a cross-sectional schematic diagram of a packaging structure according to an embodiment of the present invention. Figure 1 Some components are omitted. Please refer to Figure 1The packaging structure 10 includes a substrate 110, a composite structure 200 and a chip 120. On the Z axis (i.e., the normal direction of the substrate 110), the composite structure 200 is disposed on the substrate 110. The composite structure 200 is, for example, a "ㄇ"-shaped structure or a top cover-shaped structure. Thereby, a receiving space SP can be formed between the composite structure 200 and the substrate 110. The chip 120 is disposed on the substrate 110 and is located in the receiving space SP. In an embodiment of the present invention, the chip 120 can be disposed in contact with or adjacent to the composite structure 200. Under the above-mentioned setting, the heat energy generated by the chip 120 during operation can be transferred to the composite structure 200, so as to be efficiently transferred to the heat dissipation component 300 and dissipated into the environment. In addition, the electromagnetic waves or electromagnetic noise generated by the chip 120 during operation can be absorbed by the composite structure 200 to reduce the electromagnetic interference (EMI) phenomenon in the receiving space SP. Thereby, the composite structure 200 has the technical effect of electromagnetic noise reduction or electromagnetic noise resistance, so that the electromagnetic noise in the storage space SP can be reduced or eliminated. In this way, the risk of the chip 120 in the storage space SP being subjected to electromagnetic interference can be reduced, or the chip 120 in the storage space SP can be placed in a clean environment without electromagnetic interference. Under the above-mentioned setting, the packaging structure 10 has good heat dissipation and electromagnetic noise reduction effects. In addition, since the ceramic layer 210 and the metal layers 210 and 220 in the composite structure 200 adopt direct bonding technology (for example, copper-clad ceramic) to reduce the thermal resistance between the film layers in the composite structure 200, it can provide good heat dissipation for the chip 120, and can reduce the influence of electromagnetic interference on the chip 120. The packaging structure 10 has good electronic performance and quality.

[0021] Please refer to Figure 1, the substrate 110 of the packaging structure 10 is, for example, a rigid substrate, a flexible substrate, or a combination thereof. The substrate 110 includes glass, quartz, sapphire, acrylic resin, polycarbonate (PC), polyimide (PI), polyethyleneterephthalate (PET), other suitable transparent materials, or a combination thereof, but is not limited thereto. In some embodiments, the substrate 110 may be a single-layer or multi-layer structure. For example, the substrate 110 may be a printed circuit board. The substrate 110 is, for example, a structure formed by stacking multiple circuit layers. Each circuit layer includes, for example, an insulating layer and a conductive layer. The conductive layer includes a circuit disposed on the surface of the insulating layer and a conductive through-hole penetrating the insulating layer. The material of the insulating layer includes a core layer of semi-cured resin (prepreg, PP), ABF (Ajinomoto Build-up Film) resin or photocurable dielectric material (e.g., photoimageable dielectric, PID)), but is not limited thereto. The material of the lines and conductive vias of the conductive layer includes, for example, copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), silver (Ag), gold (Au) or alloys thereof, but is not limited thereto.

[0022] The substrate 110 has an upper surface 111 and a lower surface 112 relative to each other. A plurality of connectors 114 are disposed on the lower surface 112. The connectors 114 can be electrically connected to the circuit layer on the lower surface 112 of the substrate 110. The connectors 114 include, for example, solder balls, microbumps, controlled collapse chip connection (C4) bumps, ball grid array (BGA) balls, or other suitable elements, but are not limited thereto. The material of the connector 114 can be the same as that of the conductive layer, so it is not repeated here. In some embodiments, the material of the connector 114 also includes tin.

[0023] The chip 120 is disposed on the upper surface 111 of the substrate 110. The chip 120 includes an integrated circuit element 122 and a connector 124. The integrated circuit element 122 may include a logic chip, and the logic chip may include a central processing unit (CPU) chip, a graphics processing unit (GPU) chip, a mobile application chip, a micro control unit (MCU) chip, a baseband (BB) chip, an application processor (AP) chip, a field-programmable gate array (FPGA) chip, an application-specific integrated circuit (ASIC) chip, or the like. The integrated circuit element 122 may also include a memory chip, an input-output (IO) chip, or the like. In other embodiments, the chip 120 may also include an integrated passive device (IPD), which may also be referred to as an integrated passive device, but is not limited thereto. The connector 124 is connected to the active surface of the integrated circuit element 122 and the circuit layer on the upper surface 111 of the substrate 110. In this way, the integrated circuit element 122 can be electrically connected to the substrate 110 through the connector 124. The connector 124 includes, for example, solder balls, micro bumps, controlled collapse chip connection (C4) bumps, ball grid array (BGA) balls, or other suitable elements, but is not limited thereto.

[0024] In some embodiments, the chip 120 is, for example, a chip having a radio frequency (RF) communication function. Multiple chips 120 can communicate wirelessly. It should be noted that Figure 1 The number of the chips 120 shown is 1, but the number of the chips 120 is not limited thereto. According to design requirements, the number of the chips can be multiple, for example: 2, 3, 10 or more, but not limited thereto.

[0025] In the embodiment of the present disclosure, the package architecture 10 can be applied as a single-layer package or a package on package (PoP), but is not limited thereto. The package architecture 10 can include wafer level packaging (WLP), chip scale packaging (CSP), system-in-package (SiP), chip-on-wafer (CoW) structure, chip-on-wafer-on-substrate (CoWoS) structure, or other suitable packages, but is not limited thereto. Thus, the package architecture 10 can meet the needs of packaging technology for shrinking electronic components.

[0026] The composite structure 200 is disposed on the upper surface 111 of the substrate 110. The composite structure 200 serves as a top cover to cover the chip 120. In this way, the chip 120 can be disposed in the accommodation space between the composite structure 200 and the substrate 110. The chip 120 can directly or indirectly contact the composite structure 200. Under the above configuration, the heat energy or electromagnetic waves generated by the chip 120 can be conducted or absorbed by the composite structure to perform the functions of heat dissipation and noise reduction. The components and structure of the composite structure 200 will be described in detail below.

[0027] The composite structure 200 includes a first metal layer 220, a ceramic layer 210, and a second metal layer 240 stacked sequentially on the Z axis. The ceramic layer 210 is sandwiched between the first metal layer 220 and the second metal layer 240. The ceramic layer 210 has a first surface 211 (for example, an upper surface) and a second surface 212 (for example, a lower surface) opposite to the first surface 211. The first metal layer 220 may have an opening O1 after patterning. In this way, the first metal layer 220 may be a ring with an opening O1, disposed on the second surface 212 of the ceramic layer 210. In some embodiments, the first metal layer 220 may be disposed near the outer edge of the ceramic layer 210 and surround the center of the ceramic layer 210. The opening O1 exposes the second surface 212 of the ceramic layer 210, and the inner sidewall of the first metal layer 220 surrounds the opening O1. In other embodiments, the outer edge of the first metal layer 220 may be flush with the outer edge of the ceramic layer 210, but is not limited thereto. In some embodiments, the ratio of the area of ​​the first metal layer 220 contacting the second surface 212 to the area of ​​the second surface 212 is 1:1.2 to 1:10. In some optional embodiments, the ratio of the area of ​​the first metal layer 220 contacting the second surface 212 to the area of ​​the second surface 212 is 1:1.2 to 1:4. Under the above settings, the composite structure 200 can have a good anti-noise or noise reduction effect.

[0028] In some embodiments, the second metal layer 240 may be disposed entirely on the first surface 211 of the ceramic layer 210. That is, the second metal layer 240 may completely overlap the ceramic layer 210. The outer edge of the second metal layer 240 may be flush with the outer edge of the ceramic layer 210, but is not limited thereto. In some embodiments, the thickness of the first metal layer 220 and the second metal layer 240 may be the same or different. For example, the thickness of the first metal layer 220 may be greater than or equal to the thickness of the second metal layer 240, but is not limited thereto. In other embodiments, the thickness of the second metal layer 240 may be greater than or equal to the thickness of the first metal layer 220. In some embodiments, the thickness of the first metal layer 220 is 0.05 millimeters (mm) to 0.1 millimeters. In other embodiments, if the first metal layer 220 is welded to the ceramic layer 210, the thickness of the first metal layer 220 may be 0.1 millimeters to 0.5 millimeters, but is not limited thereto. If the second metal layer 240 is used as a low-power integrated heat spreader (IHS), the thickness of the second metal layer 240 is 0.05 mm to 0.1 mm. In other embodiments, if the second metal layer 240 is used as a high-power integrated heat spreader, the thickness of the second metal layer 240 is 0.1 mm to 1.0 mm, but is not limited thereto.

[0029] In some embodiments, the ratio of the thickness of the first metal layer 220 to the second metal layer 240 is about 1:1 to 1:2, but not limited thereto. In some optional embodiments, the ratio of the area of ​​the first metal layer 220 to the second metal layer 240 is 1:1.2 to 1:4, but not limited thereto.

[0030] In some embodiments, the materials of the first metal layer 220 and the second metal layer 240 may be the same or different, including copper, iron (Fe), molybdenum, titanium, tantalum, niobium, hafnium, nickel, chromium, cobalt, zirconium, tungsten, tin, aluminum, silver, gold or alloys thereof, but not limited thereto. In the present embodiment, the materials of the first metal layer 220 and the second metal layer 240 are, for example, copper. The thermal conductivity of the first metal layer 220 or the second metal layer 240 is 100 W / mK to 600 W / mK, or 200 W / mK to 400 W / mK. For example, the thermal conductivity of aluminum is 200 W / mK. The thermal conductivity of copper is 400 W / mK. Under the above configuration, the first metal layer 220 may contact the substrate 110 and surround the chip 120. The second metal layer 240 overlaps the chip 120 so that the chip 120 is located between the second metal layer 240 and the substrate 110. The chip 120 is coupled to the ceramic layer 210. Thereby, the first metal layer 220 and the second metal layer 240 can be applied to heat dissipation and electromagnetic shielding technologies to improve the performance of the chip 120 .

[0031] The ceramic layer 210 is disposed between the first metal layer 220 and the second metal layer 240. The ceramic layer 210 is suitable for absorbing electromagnetic waves generated by the chip 120. In some embodiments, the material of the ceramic layer 210 includes ferrite, for example. Ferrite is, for example, a non-conductive sub-magnetic ceramic material including iron oxide as a main component. In some embodiments, the bulk ferrite material of the ceramic layer 210 includes cubic ferrites, hexagonal ferrites, or orthorhombic ferrites.

[0032] The chemical formula of the cubic ferrite is MFe2O4, wherein Fe is trivalent iron. M is divalent nickel (Ni), manganese (Mn), magnesium (Mg), zinc (Zn), copper (Cu), cobalt (Co) or a mixture thereof. In addition, the chemical formula of the cubic ferrite can also be R3Fe5O 12 , wherein Fe is trivalent iron. R is a rare earth element (Rare Earth) including yttrium (Y) and lanthanide metals. Lanthanide metals include, for example, lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu). In some selective embodiments, R is yttrium or gadolinium, but is not limited thereto. In some embodiments, the ferrite may be manganese-zinc ferrite (Mn-Zn ferrites), nickel-zinc ferrite (Ni-Zn ferrites) or magnesium-zinc ferrite (Mg-Zn ferrites), but is not limited thereto.

[0033] The chemical formula of the above-mentioned hexagonal ferrite may include BaFe 12 O 19 、Ba2MFe 12 O 22 、BaM2Fe 16 O 27 、Ba3M2Fe 24 O 41 、Ba2M2Fe 28 O 46 or Ba4M2Fe 36 O 60 , wherein M is divalent nickel (Ni), cobalt (Co), zinc (Zn) or magnesium (Mg). Barium (Ba) can be replaced by strontium (Sr) or lead (Pb).

[0034] The chemical formula of the orthorhombic ferrite may include RFeO3, wherein R is a trivalent rare earth element. Fe is trivalent iron and may be partially replaced by trivalent nickel (Ni), manganese (Mn), chromium (Cr), cobalt (Co), aluminum (Al), calcium (Ca), or by pentavalent vanadium (V). 5+ )

[0035] The following are the materials of the ferrite in the embodiment of the present invention, but are not limited to the following: Fe3O4, Ni:B / Fe3O4, (Ni 0.5 Zn 0.5 )Fe2O4、(Ni 0.4 Cu 0.2 Zn 0.4 )Fe2O4、(Ni 0.4 Co 0.2 Zn 0.4 )Fe2O4、Ni 0.8 Co 0.2 Fe2O4、Ni 0.5 Co 0.5 Fe2O4, MnFe2O4, Co 0.5 Mn 0.5 Fe2O4, CoFe2O4, Bi 0.8 La 0.2 FeO3、PANI│Co 0.5 Zn 0.5 Fe2O4、PANI│Li 0.35 Zn 0.3 Fe 2.35 O4, Nd / BiFeO3, CoBaTiFe 10 O 19 、Ni 0.4 Co 0.6 BaTiFe 10 O 19 、Ni 0.2 Co 0.8 BaTiFe 10 O 19 、(MnNi) 0.2 Co 0.6 BaTiFe 10 O 19 、(MnNi) 0.25 Co 0.5 BaTiFe 10 O 19 、ZnO / BaFe 12 O 19 ,BaCe 0.05 Fe 11.95 O 19 、NiFe2O4 / ZnFe2O4 / SrFe12 O 19 、(Mn 0.5 Cd 0.5 Zr) 1.4 SrF 9.2 O 19 、(Mn 0.5 Cd 0.5 Zr) 1.6 SrF 8.8 O 19 、Nd 0.2 Co 0.2 Sr 0.8 Fe 11.8 O 19 、CoZnAl 0.2 Ce 0.2 BaF 15.6 O 27 、Zn 1.5 Co 0.5 BaF 16 O 27 、Ba1Co 0.9 Zn 1.1 Fe 16 O 27 , Ba 0.8 La 0.2 Co 0.9 Zn 1.1 Fe 16 O 27 、(Sb:SnO2)│Zn:Co:Gd / BaFe 16 O 27 .

[0036] In some embodiments, the thermal conductivity of the ceramic layer 210 is 1 W / mK to 25 W / mK. 2+ The ratio of the ceramic layer 210 to the overall structure is high, so the thermal conductivity can be improved and is about 25W / mK. In some embodiments, the thermal conductivity of the ceramic layer 210 is 1W / mK to 25W / mK, but not limited thereto. In other embodiments, the thermal conductivity of the ceramic layer 210 can be selectively 1W / mK to 20W / mK, but not limited thereto. In this way, the ceramic layer 210 has a heat conduction function and can transfer the heat energy generated by the chip 120 to the second metal layer 240 for heat dissipation.

[0037] It is worth noting that the coefficient of thermal expansion (CTE) of the ceramic layer 210 is 2x10 -6 ℃ to 12x10 -6 ℃, but not limited thereto. The chip 120 is, for example, a silicon chip, and its thermal expansion coefficient is 2x10-6 ℃ to 3x10 -6 ℃. Under the above settings, the thermal expansion coefficient of the chip 120 can match the thermal expansion coefficient of the ceramic layer 210. In an embodiment of the present invention, matching can be defined as the difference in thermal expansion coefficient between the two elements being less than 10x10 -6 ℃. Compared with the thermal expansion coefficient of the metal layer (for example, the thermal expansion coefficient of copper is 16.5x10 -6 ℃), the thermal expansion coefficient of the chip 120 is similar to that of the ceramic layer 210, and the volume change of the chip 120 at high temperature can be similar to the volume change of the ceramic layer 210 in contact. In a preferred embodiment, the thermal expansion coefficient of the ceramic layer 210 can be selectively about 5×10 -6 ℃. Within the above range, the thermal expansion coefficient of the ceramic layer 210 can match a variety of semiconductor materials, including silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN) or other suitable semiconductor materials, but not limited thereto. Therefore, the variation difference between the chip 120 and the ceramic layer 210 can be reduced and the warpage can be reduced. In this way, the bonding strength between the chip 120 and the ceramic layer 210 of the composite structure 200 can be improved, and the reliability can be increased.

[0038] In some embodiments, the ceramic layer 210 has a groove 216. The groove 216 may be a groove with a depth formed on the second surface 212 of the ceramic layer 210. The groove 216 may overlap the accommodation space SP. In some embodiments, the groove 216 may be located within the outer contour of the accommodation space SP. The groove 216 has a bottom surface 214 and an inner sidewall surrounding the bottom surface 214. There is a height difference between the bottom surface 214 of the groove 216 and the second surface 212 to define the depth of the groove 216. For example, on the Z axis, the maximum distance from the second surface 212 to the first surface 211 is the first height H1 (which can be regarded as the thickness of the ceramic layer 210). On the Z axis, the maximum distance from the bottom surface 214 of the groove 216 to the first surface 211 is the second height H2. In the disclosed embodiment, the depth of the groove 216 is defined as the difference between the first height H1 and the second height H2. The first height H1 is, for example, 0.1 mm to 1.0 mm, the second height H2 is, for example, 0.05 mm to 0.9 mm, and the depth of the groove 216 is, for example, 0.05 mm to 0.1 mm, but is not limited thereto.

[0039] like Figure 1 As shown, the chip 120 can be disposed corresponding to the groove 216. On the Z axis, the outer edge of the chip 120 can be within the inner side wall of the groove 216, but is not limited thereto. In some embodiments, the inner side wall of the groove 216 and the side wall of the outer edge of the chip 120 can be spaced laterally. Figure 1The upper surface of the chip 120 in the composite structure 200 can contact the ceramic layer 210 in the groove 216, but it is not limited to this. Under the above-mentioned setting, the chip 120 can have a good heat dissipation effect by contacting the ceramic layer 210 of the composite structure 200. Due to the bonding technology used by the ceramic layer 210 and the first metal layer 220 and the second metal layer 240 in the composite structure 200, the thermal resistance between the film layers in the composite structure 200 should be reduced, thereby providing good heat dissipation for the chip 120. The ceramic-metal bonding technology with low thermal resistance includes direct and indirect bonding technology, the direct bonding technology includes direct bonded copper technology, and the indirect bonding technology includes brazing, soldering, etc., but it is not limited to this.

[0040] In some embodiments, a thermal conductive material layer 160 may be further provided in the groove 216. The thermal conductive material layer 160 is provided on the bottom surface 214 of the groove 216 of the ceramic layer 210. The thermal conductive material layer 160 is provided between the chip 120 and the bottom surface 214 of the ceramic layer 210 to connect the chip 120 and the ceramic layer 210. The thermal conductive material layer 160 is, for example, a thermal interface material (TIM), including heat dissipation paste or solder. When the thermal conductive material layer 160 is heat dissipation paste, the thermal conductivity coefficient may be less than the thermal conductivity coefficient of the ceramic layer 210. When the thermal conductive material layer 160 is solder, the thermal conductivity coefficient may be greater than or equal to the thermal conductivity coefficient of the ceramic layer 210. The thermal conductive material layer 160 may reduce the contact thermal resistance between the chip 120 and the ceramic layer 210 to improve the heat dissipation performance. The material of the thermal conductive material layer 160 is, for example, silicone grease, silica gel, thermal conductive glue or heat dissipation pad. In some embodiments, the material of the heat dissipation paste includes silver paste, solder paste, and aluminum paste. The material of the solder includes glass fiber, acrylic resin or epoxy resin mixed with metal particles, or a combination thereof, but is not limited thereto.

[0041] It is worth noting that the ceramic layer 210 is suitable for absorbing the transmitted waves of electromagnetic waves. Generally speaking, when electromagnetic waves are incident on the ceramic layer 210, part of them will be reflected and called reflected waves, while the other part will be incident on the ceramic layer 160. The electromagnetic waves incident on the ceramic layer 160 are defined as transmitted waves. In some embodiments, the absorption response range of the ceramic layer 210 to the electromagnetic waves is 100MHz to 400GHz. Most of the electromagnetic waves entering the ceramic layer 210 from the second surface 212 of the ceramic layer 210 will be absorbed by the ceramic layer 210, so that the electromagnetic waves (i.e., transmitted waves) that penetrate the ceramic layer 210 will lose some of their energy detected on the first surface 211, which is the insertion loss. The insertion loss of electromagnetic waves is shown in Formula 1:

[0042]

[0043] Among them, S 21 The insertion loss of electromagnetic waves is shown in FIG. 1 , where the first port is the second surface 212 of the ceramic layer 210, and the second port is the first surface 211 of the ceramic layer 210. The electromagnetic wave energy measured at the first port is the electromagnetic wave energy incident on the ceramic layer 210 at the second surface 212, and the electromagnetic wave energy measured at the second port is the electromagnetic wave energy exiting the ceramic layer 210 at the first surface 211. In this way, the electromagnetic waves absorbed by the ceramic layer 210 can be measured.

[0044] The ceramic layer 210 of the composite structure 200 of the disclosed embodiment has a good absorption effect for electromagnetic waves with a reaction range of 100 MHz to 400 GHz. For example, when the ceramic layer 210 is manganese zinc ferrite (Mn-Zn ferrites), nickel zinc ferrite (Ni-Zn ferrites) or magnesium zinc ferrite (Mg-Zn ferrites), and the thickness of the ceramic layer 210 is about 4 mm, the insertion loss of electromagnetic waves with a frequency of 10 ... Since the ceramic layer 210 of the composite structure 200 has the effect of absorbing electromagnetic waves to achieve the effect of electromagnetic noise reduction, and the first metal layer 220 and the second metal layer 240 of the composite structure 200 can also surround or cover the chip 120 to reflect the electromagnetic waves in the external environment to achieve the effect of electromagnetic noise reduction, the accommodation space SP where the chip 120 is located can maintain a clean environment without electromagnetic interference. Under the above-mentioned settings, the packaging structure 10 including the composite structure 200 can enable multiple chips 120 to communicate wired or wirelessly in the accommodation space with good communication quality. In this way, the chip 120 of the packaging structure 10 can reduce the impact of electromagnetic interference, and can provide the chip 120 with a technology for transmitting signals through wireless communication, further improving the electronic performance and quality of the packaging structure 10.

[0045] In short, since the composite structure 200 includes a ceramic layer 210 that absorbs electromagnetic waves and a first metal layer 220 and a second metal layer 240 on two surfaces 211 and 212 of the ceramic layer 210, the composite structure 200 can not only absorb electromagnetic waves, but also reflect external electromagnetic waves. In this way, the composite structure 200 can have the technical effects of anti-noise and noise reduction, and reduce the influence of electromagnetic noise in the accommodation space SP between the composite structure 200 and the substrate 110. In addition, since the ceramic layer 210 and the first metal layer 220 and the second metal layer 240 in the composite structure 200 adopt bonding technology, the composite structure 200 has a good bonding interface thermal resistance, so the heat energy can be very quickly transferred to the low-temperature fin area of ​​the heat dissipation component 300 for heat dissipation. In this way, the ceramic layer 210 of the embodiment of the present disclosure has the effect of heat dissipation and anti-electromagnetic noise or magnetic noise reduction, and can more effectively dissipate the heat energy transmitted by the ceramic layer 210 and reduce the influence of electromagnetic waves. Therefore, the composite structure 200 can have good heat dissipation effect and electromagnetic wave absorption effect at the same time. Based on the above, the composite structure 200 can be applied to the packaging structure 10, so that the packaging structure 10 has good heat dissipation, electromagnetic noise reduction, and good electronic performance and quality.

[0046] In some embodiments, the package structure 10 further includes a heat dissipation component 300 disposed on the second metal layer 240 of the composite structure 200. The composite structure 200 is located between the heat dissipation component 300 and the substrate 110. The heat dissipation component 300 is, for example, a heat dissipation fin or a heat dissipation block. In some embodiments, the heat dissipation component 300 may also be a heat pipe, but is not limited thereto. Thus, the heat energy generated by the chip 120 can be transferred to the second metal layer 240 through the ceramic layer 210, and then dissipated to the environment through the heat dissipation component 300, so as to enhance the heat dissipation effect of the package structure 10 and enhance the electronic performance or quality.

[0047] In some embodiments, the package architecture 10 further includes a package component 140 disposed on the upper surface 111 of the substrate 110. The package component 140 encapsulates the composite structure 200. For example, the package component 140 may surround the composite structure 200. The top surface of the package component 140 may be flush with the top surface of the second metal layer 240, but is not limited thereto. The sidewall of the outer edge of the package component 140 may be flush with the sidewall of the outer edge of the substrate 110, but is not limited thereto. The material of the package component 140 is, for example, a molding material, including a molding compound, an epoxy, an organic polymer, a polymer with or without a silicon dioxide filler or a glass filler, or other materials, but is not limited thereto.

[0048] Under the above-mentioned setting, since the package structure 10 includes a composite structure 200 having a heat dissipation effect and an electromagnetic wave absorption effect. Thereby, the package structure 10 can have the technical effects of heat dissipation, electromagnetic noise resistance and electromagnetic noise reduction. In addition, the ceramic layer 210 of the composite structure 200 contacts the chip 120 for heat dissipation and noise reduction. Since the thermal expansion coefficient of the ceramic layer 210 can match the thermal expansion coefficient of the chip 120, the variation difference between the chip 120 and the ceramic layer 210 can be reduced and the warping can be reduced. In this way, the bonding strength between the chip 120 and the ceramic layer 210 of the composite structure 200 can be improved and the reliability can be increased. In addition, the composite structure 200 can be directly welded to the chip 120 to increase the heat dissipation efficiency. In addition, the second metal layer 240 also dissipates the heat energy transferred by the ceramic layer 210 through the heat dissipation component 300. Based on the above, the package structure 10 can have good heat dissipation and electromagnetic noise reduction effects through the composite structure 200, as well as good electronic performance and quality.

[0049] It must be noted here that the following embodiments continue to use the component numbers and some contents of the aforementioned embodiments, wherein the same numbers are used to represent the same or similar components. For the partial description of the same technical contents omitted, reference may be made to the aforementioned embodiments, which will not be repeated in the following embodiments.

[0050] Figure 2 FIG. 1 is a cross-sectional schematic diagram of a packaging structure of another embodiment of the present invention. For the sake of clarity and convenience of description, Figure 2 Some components are omitted. Figure 1 and Figure 2 The packaging structure 10A of this embodiment is Figure 1 The composite structure 200 is similar to the packaging structure 10, and the main difference is that the composite structure 200 further includes a circuit component 180 and a plurality of chips 120C and 120D can be arranged on the ceramic layer 210 of the composite structure 200. In detail, the circuit component 180 includes a first circuit pattern 182, a second circuit pattern 186 and a plurality of conductive vias 184. The first circuit pattern 182 is arranged on the second surface 212 of the ceramic layer 210. The second circuit layer 186 is arranged on the first surface 211 of the ceramic layer 210. The conductive via 184 is arranged in the ceramic layer 210 and penetrates the ceramic layer 210. The first circuit pattern 182 is, for example, a circuit pattern formed by patterning a conductive material, including a circuit and a pad. The material of the conductive material is, for example, the same as the first metal layer 220 or the second metal layer 240, so it is not repeated.

[0051] The structure and material of the second circuit pattern 186 are similar to those of the first circuit pattern 182, so they are not described again. In some embodiments, the second circuit pattern 186 and the second metal layer 240 belong to the same layer and are formed by patterning the same material layer, but the present invention is not limited thereto. In some embodiments, the second metal layer 240 at least partially covers the ceramic layer 210. The orthographic projection of the second metal layer 240 on the ceramic layer 210 at least partially overlaps the orthographic projection of the opening O1 on the ceramic layer 210. The first circuit pattern 182 is electrically connected to the second circuit pattern 186 through the conductive via 184. In some embodiments, the first circuit layer 182 may be embedded in the thermal conductive material layer 160, or surrounded by the thermal conductive material layer 160, but the present invention is not limited thereto.

[0052] In some embodiments, the first metal layer 220 surrounds a first accommodating space SP1. The packaging component 140 may be partially disposed on the second metal layer 240 of the composite structure 200, and the heat dissipation component may be disposed on the packaging component 140 located on the ceramic layer 210. The packaging component 140 may be annular to surround the first surface 211 and define a second accommodating space SP2 with the heat dissipation component 300. On the Z axis, the first accommodating space SP1 may partially overlap the second accommodating space SP2. In other embodiments, the inner sidewall of the packaging component 140 may be located within the inner sidewall of the first metal layer 220, but is not limited thereto. Figure 2 As mentioned above, the volume of the first accommodating space SP1 may be greater than the volume of the second accommodating space SP2, but is not limited thereto.

[0053] The packaging architecture 10A also includes a plurality of chips. The plurality of chips include a first chip 120A, 120B and a second chip 120C, 120D. The first chip 120A, 120B is disposed on the substrate 110 and is located in the first accommodation space SP1. The second chip 120C, 120D is disposed on the ceramic layer 210 of the composite structure 200 and is located in the second accommodation space SP2. The thermal conductive material layer 162 is disposed between the second chip 120C, 120D and the heat dissipation component 300. The structure and material of the thermal conductive material layer 162 are similar to those of the thermal conductive material layer 160, so they are not described in detail here. In some embodiments, the sidewall of the thermal conductive material layer 162 is flush with the sidewall of the second chip 120C, 120D, but is not limited thereto.

[0054] The back surface (e.g., the upper surface) of the first chip 120A, 120B has a contact or pad to electrically connect to the first circuit pattern 182 under the ceramic layer 210. The active surface (e.g., the lower surface) of the second chip 120C, 120D has a contact or pad to electrically connect to the second circuit pattern 186 on the ceramic layer 210. Under the above configuration, the first chip 120A, 120B can be disposed in the first accommodation space SP1 between the substrate 110 and the second surface 212 of the ceramic layer 210. The second chip 120C, 120D can be disposed in the second accommodation space SP2 between the first surface 211 of the ceramic layer 210 and the heat dissipation component 300. The first chip 120A, 120B can be electrically connected to the second chip 120C, 120D through the circuit component. In this way, the composite structure 200 can be used to provide a clean environment without electromagnetic interference in the first accommodation space SP1, and the second accommodation space SP2 can provide electromagnetic noise resistance and heat dissipation effects through the heat-resistant component 300 and the packaging component 140. Therefore, the chip that needs to avoid electromagnetic interference or perform wireless communication can be placed in the first accommodation space SP1, and the computing chip that needs heat dissipation or the chip that is not easily affected by electromagnetic interference can be placed in the second accommodation space. In this way, the packaging structure 10A has good electronic performance and quality. In addition, the packaging structure 10A can also achieve the same effect as the above embodiment.

[0055] Figure 3 FIG. 1 is a cross-sectional schematic diagram of a packaging structure of another embodiment of the present invention. For the sake of clarity and convenience of description, Figure 3 Some components are omitted. Figure 1 and Figure 3 The packaging structure 10B of this embodiment is Figure 1 The composite structure 200B is similar to the package structure 10, with the main difference being that the ceramic layer 210B of the composite structure 200B has a sealed space 260. The sealed space 260 is, for example, a groove formed in the ceramic layer 210B, located between the first metal layer 220 and the second metal layer 240. The sealed space 260 is isolated by the ceramic layer 210B. The isolation is defined as the groove in the ceramic layer 210B, which is isolated from the outside through the ceramic layer 210B.

[0056] In some embodiments, a working fluid is provided in the sealed space 260 after evacuation. The working fluid is, for example, water, alcohol, ethanol, or other suitable liquids. The volume of the working fluid is approximately between 1:100 and 1:10 of the volume of the sealed space 260, or may be selectively between approximately 1:70 and 1:50, but not limited thereto. The ratio of the volume of the sealed space 260 to the volume of the ceramic material 210 is approximately between 1:1.1 and 1:10, or approximately between 1:10 and 1:50, but not limited thereto.

[0057] Under the above configuration, when the chip 120 generates heat energy during operation, the ceramic layer 210B can absorb the heat energy, so that the working fluid in the sealed space 260 near the chip 120 evaporates into gas when heated. The working fluid in other parts is still liquid and generates a pressure difference. The gas can pass through the pressure difference and approach the second metal layer 240 on the Z axis. Thereby, the gas can transfer heat energy to the second metal layer 240 and dissipate it into the external environment through the heat dissipation component 300. After the gas is cooled into liquid, it flows back to the heat source in the sealed space 260 near the chip 120. In this way, the composite structure 200B with the sealed space 260 has the application of a heat spreader (also called a vapor chamber), which can further increase the heat dissipation effect of the composite structure 200B and the packaging structure 10B. The packaging structure 10B can also achieve the same effect as the above embodiment.

[0058] In other embodiments, a temperature-averaging structure for vapor-liquid two-phase change is further provided in the sealed space 260. The temperature-averaging structure may include a heat pipe or the aforementioned temperature-averaging plate, but is not limited thereto. In some embodiments, the heat pipe may be embedded in the ceramic layer 210B. The heat pipe is, for example, a hollow metal tube, and the hollow interior is a closed cavity. The closed cavity contains a working fluid. The working fluid may continuously undergo a two-phase change of liquid and gas by absorbing heat and vaporizing and cooling and liquefying in the cavity. In this way, the heat pipe may further enhance the heat dissipation effect of the composite structure 200B and the packaging structure 10B.

[0059] Figure 4 FIG. 1 is a cross-sectional schematic diagram of a packaging structure of another embodiment of the present invention. For the sake of clarity and convenience of description, Figure 4 Some components are omitted. Figure 1 and Figure 4 The package structure 10C of this embodiment is Figure 1 The main difference is that the composite structure 200C further includes a plurality of microstructures 280. The microstructures 280 are, for example, cone-shaped structures disposed on the surface of the ceramic layer 210 (eg, Figure 1 In some other embodiments, the microstructure 280 may also be disposed on the bottom surface 214. Figure 1 The second surface 212 of the ceramic layer 210 is shown. In the embodiment of the present invention, the microstructure 280 can be a triangular pyramid, a quadrangular pyramid, a pentagonal pyramid or a circular pyramid, but is not limited thereto.

[0060] Please also refer to Figure 1 and Figure 4, the inner sidewall of the groove 216 of the ceramic layer 210 is aligned with the inner sidewall of the first metal layer 220. In other words, the groove 216 overlaps with the opening O1. From another perspective, the inner sidewall of the groove 216 is the inner sidewall of the ceramic layer 210. In another embodiment, the ceramic layer 210 has a portion of the first height H1 that overlaps the first metal layer 220. In the region other than the overlapped first metal layer 220, the ceramic layer 210 has a second height H2.

[0061] In some embodiments, the height of the microstructure 280 may be less than the depth of the groove 216 defined by the difference between the first height H1 and the second height H2 , but the present invention is not limited thereto. In other embodiments, the height of the microstructure 280 may be greater than or equal to the depth of the groove 216 .

[0062] In some embodiments, the microstructure 280 is laterally separated from the chip 120. That is, the microstructure 280 is isolated from the chip 120, but not limited thereto. The material of the microstructure 280 includes polymer materials, oxides, nitrides, carbides, carbonitrides or graphite, but not limited thereto. The above-mentioned polymer materials include polyethylene (PE), polyvinyl chloride (PVC), polypropylene (PP), ethylene vinyl acetate (EVA), or other suitable materials, but not limited thereto.

[0063] It is worth noting that the electromagnetic wave can be injected into the microstructure 280. The refractive index of the electromagnetic wave in the microstructure 280 is greater than the refractive index of the electromagnetic wave in the air, and the refractive index of the electromagnetic wave in the ceramic layer 210 is greater than the refractive index of the electromagnetic wave in the microstructure 280. For example, the refractive index of the electromagnetic wave in the microstructure 280 is about 1.2 to 2.0. The refractive index of the electromagnetic wave in the ceramic layer 210 is about 1.3 to 2.4.

[0064] Under the above-mentioned setting, electromagnetic waves can be emitted from the ambient air into the microstructure 280, and introduced into the ceramic layer 210 in the microstructure 280. In addition, electromagnetic waves can generate total reflection in the ceramic layer 210, between the microstructure 280 and the second metal layer 240, thereby reducing the probability of being reflected back into the accommodation space SP. In this way, in addition to increasing the area of ​​the ceramic layer 210 that absorbs electromagnetic waves, the microstructure 280 can also allow the electromagnetic waves to travel along the ceramic layer 210, thereby increasing the effect of the ceramic layer 210 absorbing electromagnetic waves. In addition, the microstructure 280 can also reduce the probability of electromagnetic waves being reflected back into the accommodation space SP, further enhancing the noise reduction and anti-noise effects of the composite structure 200C. The composite structure 200C and the packaging architecture 10C can also achieve the same effects as the above-mentioned embodiments.

[0065] Figure 5 FIG. 1 is a cross-sectional schematic diagram of a packaging structure of another embodiment of the present invention. For the sake of clarity and convenience of description, Figure 5 Some components are omitted. Figure 4 and Figure 5 The package structure 10D of this embodiment is Figure 4 The main difference is that the microstructure 280 of the composite structure 200D can also be disposed on the sidewall 218 of the ceramic layer 210. For details, please refer to Figure 1 , Figure 4 and Figure 5 , the sidewall 218 is the inner sidewall of the groove 216 surrounding the bottom surface 214. From another perspective, the sidewall 218 connects the bottom surface 214 and the second surface 212 (i.e., the surface in contact with the first metal layer 220). Since the microstructure 280 can be set on the sidewall 218 in addition to being set on the bottom surface 214 of the ceramic layer 210, the microstructure 280 can further increase the area of ​​the ceramic layer 210 that absorbs electromagnetic waves. In this way, the noise reduction and anti-noise effects of the composite structure 200D can be further enhanced. The composite structure 200D and the packaging structure 10D can also achieve the same effects as the above embodiments.

[0066] Figure 6 FIG. 1 is a cross-sectional schematic diagram of a microstructure of an embodiment of the present invention. For the sake of clarity and convenience of description, Figure 6 Some elements are omitted from illustration. Figure 6 The microstructure 280 shown is, for example, Figure 4 or Figure 5 The microstructure 280 shown in FIG. 1 is a microstructure 280. In some embodiments, the microstructure 280 is, for example, a cone or a pyramid. The microstructure 280 has an inclined surface 281. The microstructure 280 is disposed on the surface of the ceramic layer 210 (for example: Figure 1 The bottom surface 214 is shown). An angle A is formed between the inclined surface 281 and the bottom surface of the ceramic layer 210. The range of the angle A includes 30° to 80°, but is not limited thereto. Under the above-mentioned setting, the inclined surface 281 has a slope, and the above-mentioned slope range is about 0.1 to 10, but is not limited thereto. Under the above-mentioned setting, the first incident angle θ1 of the electromagnetic wave L entering the microstructure 280 can be maximized. The first incident angle θ1 is defined as the angle between the electromagnetic wave L and the normal of the inclined surface 281.

[0067] In some embodiments, the microstructure 280 may define a width on the bottom surface of the ceramic layer 210. On the Z-axis, the microstructure 280 may have a height perpendicular to the bottom surface. The width of the microstructure 280 is, for example, 0.2 millimeters (mm) to 2 millimeters. The height of the microstructure 280 is, for example, 0.4 millimeters to 4 millimeters. The height and width of the microstructure 280 can be used to define the aspect ratio of the microstructure 280, that is, the ratio of height to width. Under the above settings, the aspect ratio of the microstructure 280 can be 2:1 to 20:1, but is not limited thereto. In some embodiments, if the aspect ratio is too low, the microstructure 280 has a poor absorption effect on long-wavelength electromagnetic waves or short-wavelength electromagnetic waves used in the communication field.

[0068] In some other embodiments, two adjacent microstructures 280 may be separated by a distance, and the distance may be 0.2 mm to 1 mm, but is not limited thereto.

[0069] In some embodiments, after entering the microstructure 280, the electromagnetic wave L approaches the normal of the inclined surface 281 because the refractive index of the electromagnetic wave L in the microstructure 280 is greater than the refractive index of the electromagnetic wave L in the air, and forms a first refraction angle θ2 between the electromagnetic wave L and the normal of the inclined surface 281. The electromagnetic wave L then passes through the microstructure 280 and enters the ceramic layer 210 at the bottom surface of the ceramic layer 210 where the microstructure 280 contacts. The second incident angle θ3 at which the electromagnetic wave L enters the ceramic layer 210 can be defined as the angle between the electromagnetic wave L and the normal of the bottom surface. Then, after entering the ceramic layer 210, the electromagnetic wave L approaches the normal of the bottom surface because the refractive index of the electromagnetic wave L in the ceramic layer 210 is greater than the refractive index of the electromagnetic wave L in the ceramic layer 210, and forms a second refraction angle θ4 between the electromagnetic wave L and the normal of the bottom surface. In some embodiments, the first incident angle θ1 is greater than the first refraction angle θ2. The second incident angle θ3 is greater than the second refraction angle θ4. Under the above configuration, the electromagnetic wave L may be introduced into the ceramic layer 210 by the microstructure 280 , so as to be further absorbed by the ceramic layer 210 .

[0070] It is worth noting that the electromagnetic wave L can travel toward the second metal layer 240 after entering the ceramic layer 210, and is reflected at the first surface 211 where the second metal layer 240 contacts the ceramic layer 210. Since the refractive index of the electromagnetic wave L in the ceramic layer 210 is greater than the refractive index of the electromagnetic wave L in the ceramic layer 210, the electromagnetic wave will be totally reflected at the junction of the microstructure 280 and the ceramic layer 210 and return to the ceramic layer 210. Therefore, the probability of the electromagnetic wave being reflected back into the accommodating space SP can be reduced. Under the above-mentioned setting, in addition to increasing the area of ​​the ceramic layer 210 absorbing electromagnetic waves, the microstructure 280 can also make the electromagnetic wave travel along the ceramic layer 210, thereby increasing the effect of the ceramic layer 210 absorbing electromagnetic waves. In addition, the microstructure 280 can also reduce the probability of the electromagnetic wave being reflected back into the accommodating space SP, further enhancing the noise reduction and anti-noise effect of the composite structure. The composite structure and the packaging architecture can also achieve the same effect as the above-mentioned embodiment.

[0071] In summary, the composite structure of an embodiment of the present invention and the packaging architecture including the composite structure include a ceramic layer that absorbs electromagnetic waves and a first metal layer and a second metal layer on both surfaces of the ceramic layer. Therefore, the composite structure can not only absorb electromagnetic waves, but also reflect external electromagnetic waves. In this way, the composite structure can have the technical effects of anti-noise and noise reduction, and reduce the influence of electromagnetic noise in the accommodation space between the composite structure and the substrate. In addition, since the ceramic layer and the metal layer in the composite structure adopt direct bonding technology to reduce the thermal resistance between the film layers in the composite structure, the second metal layer can effectively dissipate the heat energy transferred by the ceramic layer. Therefore, the composite structure can have good heat dissipation effect and electromagnetic wave absorption effect at the same time. In addition, since the thermal expansion coefficient of the ceramic layer can match the thermal expansion coefficient of the chip, the variation difference between the chip and the ceramic layer can be reduced and the warping can be reduced. In this way, the reliability of the packaging architecture can be increased. In addition, the composite structure can also include a microstructure to further increase the effect of the ceramic layer absorbing electromagnetic waves. The microstructure can also reduce the probability of electromagnetic waves being reflected back to the accommodation space, further enhancing the noise reduction and anti-noise effect of the composite structure. Based on the above, the packaging architecture using the composite structure has good heat dissipation, electromagnetic noise reduction, and good electronic performance and quality.

Claims

1. A composite structure, characterized in that: include: A ceramic layer having a first surface and an opposite second surface, wherein the ceramic layer is suitable for absorbing electromagnetic waves, and the ceramic layer has an absorption response range of 100 MHz to 400 GHz for the electromagnetic waves; A first metal layer is disposed on the second surface, the first metal layer has an opening, the opening exposes the second surface of the ceramic layer, and an inner sidewall of the first metal layer surrounds the opening; a second metal layer disposed on the first surface, wherein an orthographic projection of the second metal layer on the ceramic layer at least partially overlaps an orthographic projection of the opening on the ceramic layer, and the ceramic layer is sandwiched between the first metal layer and the second metal layer, The ratio of the thickness of the first metal layer to the second metal layer is 1:1 to 1:2, and the ratio of the area of ​​the first metal layer to the second metal layer is 1:1.2 to 1:

4.

2. The composite structure according to claim 1, characterized in that The thermal conductivity of the first metal layer or the second metal layer is 100 W / mK to 600 W / mK.

3. The composite structure according to claim 1, characterized in that: The thermal conductivity of the ceramic layer is 1 W / mK to 25 W / mK.

4. The composite structure according to claim 1, characterized in that The thermal expansion coefficient of the ceramic layer is 2x10 -6 / ℃ to 12x10 -6 / ℃.

5. The composite structure according to claim 1, characterized in that: The material of the ceramic layer includes ferrite, and the ferrite includes cubic ferrite, hexagonal ferrite or orthorhombic ferrite.

6. The composite structure according to claim 1, characterized in that The insertion loss of the electromagnetic wave entering the ceramic layer ranges from -2 dB to -15 dB.

7. The composite structure according to claim 1, characterized in that The ceramic layer has a groove, and a height difference is formed between a bottom surface of the groove and the second surface, and the height difference is 0.05 mm to 0.1 mm.

8. The composite structure according to claim 1, characterized in that Also included is a microstructure, which is disposed on the ceramic layer.

9. The composite structure according to claim 8, characterized in that The material of the microstructure includes polymer material, oxide, nitride, carbide, carbonitride or graphite.

10. The composite structure according to claim 8, characterized in that The refractive index of the electromagnetic wave in the microstructure is greater than the refractive index of the electromagnetic wave in the air, and the refractive index of the electromagnetic wave in the ceramic layer is greater than the refractive index of the electromagnetic wave in the microstructure.

11. A packaging architecture, characterized in that: include: substrate; A composite structure is disposed on the substrate, wherein a containing space is formed between the composite structure and the substrate, and the composite structure comprises: A ceramic layer having a first surface and an opposite second surface, wherein the ceramic layer is suitable for absorbing electromagnetic waves, wherein the ceramic layer has a groove, and the groove overlaps the accommodating space; A first metal layer is disposed on the second surface, the first metal layer has an opening, the opening exposes the second surface of the ceramic layer, wherein an inner sidewall of the first metal layer surrounds the opening; and A second metal layer is disposed on the first surface, wherein an orthographic projection of the second metal layer on the ceramic layer at least partially overlaps an orthographic projection of the opening on the ceramic layer; and A chip is disposed on the substrate and located in the accommodating space, and the chip is coupled to the ceramic layer of the composite structure in the groove. The thermal expansion coefficient of the chip matches the thermal expansion coefficient of the ceramic layer of the composite structure.

12. The packaging architecture according to claim 11, characterized in that: Also includes: a heat dissipation component, disposed on the second metal layer of the composite structure; as well as A packaging component is disposed on the substrate, and the packaging component encapsulates the composite structure. The composite structure is located between the heat dissipation component and the substrate.

13. The packaging architecture according to claim 11, characterized in that: Also includes: A heat-conducting material layer is disposed on the ceramic layer, wherein the heat-conducting material is disposed in the groove and between the chip and the ceramic layer, and the thermal expansion coefficient of the heat-conducting material layer matches the thermal expansion coefficient of the ceramic layer.

14. The packaging architecture according to claim 13, characterized in that: The thermally conductive material layer includes heat dissipation paste or solder.

15. The packaging architecture according to claim 11, characterized in that: The ceramic layer has a sealed space, the sealed space is located between the first metal layer and the second metal layer, and the sealed space is isolated from the accommodating space by the ceramic layer.

16. The packaging architecture according to claim 15, characterized in that: Also included is a working fluid, which is disposed in the sealed space.

17. The packaging architecture according to claim 15, characterized in that: It also includes a temperature-averaging structure for vapor-liquid two-phase changes. The temperature-averaging structure is arranged in the sealed space and includes a heat pipe or a temperature-averaging plate.

18. The packaging architecture according to claim 11, characterized in that: The composite structure further comprises: A circuit component includes a first circuit pattern, a second circuit pattern, and a plurality of conductive through holes, wherein the first circuit pattern is electrically connected to the second circuit pattern through the plurality of conductive through holes, the second circuit pattern is arranged on a first surface of the ceramic layer, the first circuit pattern is arranged on a second surface opposite to the first surface, and the conductive through holes penetrate the ceramic layer, There are multiple chips, including a first chip and a second chip. The first chip is disposed on the substrate and electrically connected to the first circuit pattern, and the second chip is disposed on the ceramic layer and electrically connected to the second circuit pattern.

19. The packaging architecture according to claim 18, characterized in that: It also includes a heat dissipation component, which is arranged on the ceramic layer, wherein the second chip is located between the first surface and the heat dissipation component.

20. The packaging architecture according to claim 11, wherein: It also includes a microstructure, which is arranged on the bottom surface of the groove, wherein an angle is formed between the inclined surface of the microstructure and the bottom surface, and the angle is 30° to 80°.

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