Power semiconductor device, manufacturing method thereof, and power conversion device

Abstract

A power semiconductor device (1) comprises a conductive circuit pattern (10), a power semiconductor element (15), a sealing member (20), a conductive column (30), and a conductive column (conductive column (33) or a conductive column (36)). The first conductive column is connected to the conductive circuit pattern (10). The second conductive column is connected to the power semiconductor element (15). The first conductive column comprises a metal pin (31) and a conductive bonding member (32). The conductive column comprises a metal pin (metal pin (34) or metal pin (37)) and a conductive bonding member (conductive bonding member (35) or a conductive bonding member (38)).

Description

Technical Field

[0001] The present disclosure relates to a power semiconductor device, a method for manufacturing the same, and a power conversion device. Background Art

[0002] Japanese Patent Publication No. 2002-170906 (Patent Document 1) discloses a semiconductor device comprising a substrate, a semiconductor chip, a wire, an electrode pattern, a sealing resin, and a post. The semiconductor chip is fixed to the substrate. The electrode pattern is provided on the substrate. The wire is connected to the semiconductor chip and the electrode pattern. A post hole is formed in the sealing resin. A post is formed in the post hole using a high-speed Cu plating method. One end of the post is connected to the electrode pattern, and the other end of the post protrudes from the outer surface of the sealing resin.

[0003] Prior art literature

[0004] Patent Document 1: Japanese Patent Application Publication No. 2002-170906 Summary of the invention

[0005] In a power semiconductor device including a power semiconductor element, more heat is generated. When the power semiconductor device is to be mounted on a substrate on which electronic components are mounted, it is necessary to protect the electronic components from the heat generated in the power semiconductor element. In addition, since a high voltage is applied to the power semiconductor element and the conductive circuit pattern, a strong electric field is generated from the power semiconductor element and the conductive circuit pattern. It is also necessary to reduce the adverse effects of electromagnetic noise caused by the strong electric field on the electronic components on the substrate, and to prevent insulation breakdown in the insulating member (for example, a sealing member that seals the power semiconductor element) disposed between the power semiconductor element and the electronic component due to the strong electric field. For this purpose, it is necessary to make the column higher and increase the interval between the power semiconductor element and the electronic component. However, in the high-speed Cu plating method, from the perspective of the manufacturing time of the column and the manufacturing cost of the column, the height of the column cannot be increased.

[0006] The present disclosure is made in view of the above problems, and its first aspect aims to provide a power semiconductor device and a manufacturing method thereof that can form a higher conductive column and has improved reliability. The second aspect of the present disclosure aims to improve the reliability of a power conversion device.

[0007] The power semiconductor device disclosed in the present invention comprises a conductive circuit pattern, a power semiconductor element, a sealing member, a first conductive column and a second conductive column. The conductive circuit pattern comprises a first main surface. The power semiconductor element is bonded to the first main surface of the conductive circuit pattern. The sealing member seals the first main surface of the conductive circuit pattern and the power semiconductor element. The first conductive column is filled into the first hole formed in the sealing member and is connected to the first main surface of the conductive circuit pattern. The second conductive column is filled into the second hole formed in the sealing member and is connected to the power semiconductor element. The first conductive column comprises a first metal pin and a first conductive bonding member. The second conductive column comprises a second metal pin and a second conductive bonding member. The first conductive bonding member is filled between the first pin side surface of the first metal pin and the first side surface of the first hole, and the first metal pin is bonded to the conductive circuit pattern. The second conductive bonding member is filled between the second pin side surface of the second metal pin and the second side surface of the second hole, and the second metal pin is bonded to the power semiconductor element.

[0008] The manufacturing method of the power semiconductor device disclosed in the present invention includes: bonding a power semiconductor element to the first main surface of a conductive circuit pattern; and providing a sealing member that seals the first main surface of the conductive circuit pattern and the power semiconductor element and forms a first hole and a second hole. The manufacturing method of the power semiconductor device disclosed in the present invention includes: forming a first conductive column in the first hole of the sealing member; and forming a second conductive column in the second hole of the sealing member. Providing the sealing member includes: placing the conductive circuit pattern bonded with the power semiconductor element in the cavity of a mold configured with a first mold pin and a second mold pin; injecting a sealing resin material into the cavity of the mold; and hardening the sealing resin material to obtain the sealing member. The first mold pin is configured corresponding to the first hole of the sealing member. The second mold pin is configured corresponding to the second hole of the sealing member. The first conductive column is filled in the first hole of the sealing member and connected to the first main surface of the conductive circuit pattern. The second conductive column is filled in the second hole of the sealing member and connected to the power semiconductor element. The first conductive column includes a first metal pin and a first conductive bonding member. The second conductive column includes a second metal pin and a second conductive bonding member. The first conductive bonding member is filled between the first pin side surface of the first metal pin and the first side surface of the first hole, and the first metal pin is bonded to the conductive circuit pattern. The second conductive bonding member is filled between the second pin side surface of the second metal pin and the second side surface of the second hole, and the second metal pin is bonded to the power semiconductor element.

[0009] The power conversion device of the present disclosure includes: a main conversion circuit that converts input power and outputs it; and a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit. The main conversion circuit includes the semiconductor module of the present disclosure.

[0010] In the power semiconductor device disclosed in the present invention, the first conductive column includes a first metal pin, and the second conductive column includes a second metal pin. Therefore, the first height of the first conductive column and the second height of the second conductive column can be increased. In addition, the first metal pin is bonded to the conductive circuit pattern and the sealing member through the first conductive bonding member. The second metal pin is bonded to the power semiconductor element and the sealing member through the second conductive bonding member. The reliability of the power semiconductor device can be improved.

[0011] In the manufacturing method of the power semiconductor device disclosed in the present invention, the first conductive column includes a first metal pin, and the second conductive column includes a second metal pin. Therefore, a higher first conductive column and a higher second conductive column can be formed. In addition, the first metal pin is bonded to the conductive circuit pattern and the sealing member through the first conductive bonding member. The second metal pin is bonded to the power semiconductor element and the sealing member through the second conductive bonding member. According to the manufacturing method of the power semiconductor device of this embodiment, a power semiconductor device with improved reliability can be obtained.

[0012] The power conversion device of the present disclosure includes the power semiconductor device of the present disclosure and thus has improved reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic cross-sectional view of the power semiconductor device according to the first embodiment.

[0014] Figure 2 1 is a schematic cross-sectional view showing one step of the first example, the second example, and the third example of the method for manufacturing the power semiconductor device according to the first embodiment.

[0015] Figure 3 The first, second and third examples of the method for manufacturing a power semiconductor device according to the first embodiment are shown. Figure 2 A schematic cross-sectional view of the process following the process shown.

[0016] Figure 4 The first, second and third examples of the method for manufacturing a power semiconductor device according to the first embodiment are shown. Figure 3 A schematic cross-sectional view of the process following the process shown.

[0017] Figure 5 This is a diagram showing a first example of a method for manufacturing a power semiconductor device according to the first embodiment. Figure 4 A schematic cross-sectional view of the process following the process shown.

[0018] Figure 6 This is a diagram showing a first example of a method for manufacturing a power semiconductor device according to the first embodiment. Figure 5 A schematic cross-sectional view of the process following the process shown.

[0019] Figure 7 This is a diagram showing a second example of the method for manufacturing a power semiconductor device according to the first embodiment. Figure 4 A schematic cross-sectional view of the process following the process shown.

[0020] Figure 8 The third example of the method for manufacturing the power semiconductor device according to the first embodiment is shown. Figure 4 A schematic cross-sectional view of the process following the process shown.

[0021] Fig. 9 This is a schematic cross-sectional view of the power semiconductor module according to the first embodiment.

[0022] Fig.10 This is a schematic cross-sectional view of a power semiconductor module according to a modified example of the first embodiment.

[0023] Fig.11 This is a schematic cross-sectional view of a power semiconductor device according to a second embodiment.

[0024] Fig.12 This is a schematic cross-sectional view of a power semiconductor device according to a modified example of the second embodiment.

[0025] Fig.13 This is a schematic cross-sectional view of a power semiconductor device according to a third embodiment.

[0026] Fig.14 This is a schematic cross-sectional view of a power semiconductor device according to a modified example of the third embodiment.

[0027] Fig.15 This is a schematic cross-sectional view of a power semiconductor device according to a fourth embodiment.

[0028] Fig.16 This is a schematic cross-sectional view of a power semiconductor device according to a modified example of the fourth embodiment.

[0029] Fig.17 This is a block diagram showing the configuration of a power conversion system according to a fifth embodiment. DETAILED DESCRIPTION

[0030] Hereinafter, the embodiment of the present disclosure will be described. In addition, the same reference numerals are attached to the same structures, and the description thereof will not be repeated.

[0031] Implementation method 1.

[0032] refer to Figure 1 , a power semiconductor device 1 according to Embodiment 1 is described. The power semiconductor device 1 includes a conductive circuit pattern 10 , a power semiconductor element 15 , a sealing member 20 , a conductive column 30 , a conductive column 33 , and a conductive column 36 .

[0033] The conductive circuit pattern 10 is formed of a metal material such as copper or aluminum. The conductive circuit pattern 10 includes a first main surface 10a. An insulating substrate (not shown) may be provided on the main surface 10b of the conductive circuit pattern 10 opposite to the first main surface 10a. The insulating substrate may be formed of an inorganic material (ceramic material) such as aluminum oxide, aluminum nitride or silicon nitride. The insulating substrate may be formed of a resin material such as epoxy resin, polyimide resin or cyanate ester resin to which an inorganic filler (ceramic filler) such as aluminum oxide, aluminum nitride or silicon nitride is added.

[0034] The power semiconductor element 15 is bonded to the first main surface 10a of the conductive circuit pattern 10 using a conductive bonding member (not shown). The power semiconductor element 15 is mainly formed of silicon or a wide bandgap semiconductor material such as silicon carbide, gallium nitride or diamond. The conductive bonding member is, for example, solder such as lead-free solder, or a metal particle sintered body such as a silver particle sintered body, a copper particle sintered body or a nickel particle sintered body.

[0035] The power semiconductor element 15 is, for example, an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), or a freewheeling diode (FWD). The power semiconductor element 15 includes, for example, a back electrode 16, a first front surface electrode 17, and a second front surface electrode 18. The back electrode 16 is provided on the back side of the power semiconductor element 15 opposite to the first main surface 10a of the conductive circuit pattern 10. The back electrode 16 is bonded to the conductive circuit pattern 10 by a conductive bonding member (not shown). The first front surface electrode 17 and the second front surface electrode 18 are provided on the front surface of the power semiconductor element 15 on the side opposite to the back side of the power semiconductor element 15. The power semiconductor element 15 is, for example, an IGBT. The first front surface electrode 17 is, for example, a source electrode. The second front surface electrode 18 is, for example, a gate electrode. The back electrode 16 is, for example, a drain electrode.

[0036] The sealing member 20 seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor element 15. The main surface 10b of the conductive circuit pattern 10 on the side opposite to the first main surface 10a can be exposed from the sealing member 20 or can be sealed by the sealing member 20. The sealing member 20 is formed of an insulating resin material such as epoxy resin. The sealing member 20 includes a second main surface 20a that is away from the first main surface 10a of the conductive circuit pattern 10 in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0037] Holes 22, 23, and 24 are formed in the sealing member 20. The longitudinal direction of the hole 22 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The hole 22 extends to the second main surface 20a of the sealing member 20. When the second main surface 20a of the sealing member 20 is viewed from above, the hole 22 exposes a portion of the first main surface 10a of the conductive circuit pattern 10 from the sealing member 20. The longitudinal direction of the hole 23 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The hole 23 extends to the second main surface 20a of the sealing member 20. When the second main surface 20a of the sealing member 20 is viewed from above, the hole 23 exposes a portion of the first front surface electrode 17 of the power semiconductor element 15 from the sealing member 20. The longitudinal direction of the hole 24 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The hole 24 extends to the second main surface 20a of the sealing member 20. The hole 24 exposes a portion of the second front surface electrode 18 of the power semiconductor element 15 from the sealing member 20 in a plan view of the second main surface 20 a of the sealing member 20 .

[0038] The conductive column 30 is filled into the hole 22 of the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10. The longitudinal direction (length direction) of the conductive column 30 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The end of the conductive column 30 located far from the first main surface 10a of the conductive circuit pattern 10 protrudes from the second main surface 20a of the sealing member 20. The height of the conductive column 30 is, for example, more than 1.0 mm. The height of the conductive column 30 is the length of the conductive column 30 in the longitudinal direction of the conductive column 30. The height of the conductive column 30 is not particularly limited, but from the perspective of preventing the bending and breaking of the conductive column 30 and avoiding mechanical interference between the conductive column 30 and other components, it can also be less than 100 mm.

[0039] The conductive column 30 includes a metal pin 31 and a conductive bonding member 32. The longitudinal direction (length direction) of the metal pin 31 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The metal pin 31 is formed of a metal material composed of a substantially single metal element, such as copper, aluminum, gold or silver. The metal material composed of a substantially single metal element means a material composed of the single metal element and inevitable impurities. The thermal conductivity of the metal pin 31 may also be higher than the thermal conductivity of the conductive bonding member 32, and the electrical resistivity of the metal pin 31 may also be lower than the electrical resistivity of the conductive bonding member 32.

[0040] The conductive bonding member 32 bonds the metal pin 31 to the conductive circuit pattern 10. The conductive bonding member 32 is filled between the pin side of the metal pin 31 and the side of the hole 22. The conductive bonding member 35 bonds the pin side of the metal pin 31 to the side of the hole 22 of the sealing member 20. The conductive bonding member 32 is formed of a metal particle sintered body such as a silver particle particle sintered body, a copper particle particle sintered body, or a nickel particle particle sintered body, solder, or a conductive adhesive containing a resin and conductive particles dispersed in the resin.

[0041] The conductive column 33 is filled into the hole 23 of the sealing member 20 and is connected to the power semiconductor element 15 (more specifically, the first front surface electrode 17). The longitudinal direction of the conductive column 33 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The end of the conductive column 33 located far from the first main surface 10a of the conductive circuit pattern 10 protrudes from the second main surface 20a of the sealing member 20. The height of the conductive column 33 is, for example, more than 1.0 mm. The height of the conductive column 33 is the length of the conductive column 33 in the longitudinal direction of the conductive column 33. The height of the conductive column 33 is not particularly limited, but from the perspective of preventing the bending and breaking of the conductive column 33 and avoiding mechanical interference between the conductive column 33 and other components, it can also be less than 100 mm.

[0042] The conductive column 33 includes a metal pin 34 and a conductive bonding member 35. The longitudinal direction of the metal pin 34 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The metal pin 34 is formed of a metal material composed of a substantially single metal element such as copper, aluminum, gold or silver. The metal material composed of a substantially single metal element means a material composed of the single metal element and inevitable impurities. The thermal conductivity of the metal pin 34 may also be higher than the thermal conductivity of the conductive bonding member 35, and the electrical resistivity of the metal pin 34 may also be lower than the electrical resistivity of the conductive bonding member 35.

[0043] The conductive bonding member 35 bonds the metal pin 34 to the power semiconductor element 15 (more specifically, the first front surface electrode 17). The conductive bonding member 35 is filled between the pin side surface of the metal pin 34 and the side surface of the hole 23. The conductive bonding member 35 bonds the pin side surface of the metal pin 34 to the side surface of the hole 23 of the sealing member 20. The conductive bonding member 35 is formed of a metal particle sintered body such as a silver particle particle sintered body, a copper particle particle sintered body, or a nickel particle particle sintered body, solder, or a conductive adhesive containing a resin and conductive particles dispersed in the resin.

[0044] The conductive column 36 is filled into the hole 24 of the sealing member 20 and is connected to the power semiconductor element 15 (more specifically, the second front surface electrode 18). The longitudinal direction of the conductive column 36 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The end of the conductive column 36 located far from the first main surface 10a of the conductive circuit pattern 10 protrudes from the second main surface 20a of the sealing member 20. The height of the conductive column 36 is, for example, more than 1.0 mm. The height of the conductive column 36 is the length of the conductive column 36 in the longitudinal direction of the conductive column 36. The height of the conductive column 36 is not particularly limited, but from the perspective of preventing the bending and breaking of the conductive column 36 and avoiding mechanical interference between the conductive column 36 and other components, it can also be less than 100 mm.

[0045] The conductive column 36 includes a metal pin 37 and a conductive bonding member 38. The longitudinal direction of the metal pin 37 is, for example, the normal direction of the first main surface 10a of the conductive circuit pattern 10. The metal pin 37 is formed of a metal material composed of a substantially single metal element such as copper, aluminum, gold or silver. The metal material composed of a substantially single metal element means a material composed of the single metal element and inevitable impurities. The thermal conductivity of the metal pin 37 may also be higher than the thermal conductivity of the conductive bonding member 38, and the electrical resistivity of the metal pin 37 may also be lower than the electrical resistivity of the conductive bonding member 38.

[0046] The conductive bonding member 38 bonds the metal pin 37 to the power semiconductor element 15 (more specifically, the second front surface electrode 18). The conductive bonding member 38 is filled between the pin side surface of the metal pin 37 and the side surface of the hole 24. The conductive bonding member 38 bonds the pin side surface of the metal pin 37 to the side surface of the hole 24 of the sealing member 20. The conductive bonding member 38 is formed of a metal particle sintered body such as a silver particle particle sintered body, a copper particle particle sintered body, or a nickel particle particle sintered body, solder, or a conductive adhesive containing a resin and conductive particles dispersed in the resin.

[0047] When the power semiconductor device 1 is in operation, the first current flowing through the metal pin 31 and the second current flowing through the metal pin 34 are respectively larger than the third current flowing through the metal pin 37. Therefore, the first cross-sectional area of ​​the metal pin 31 and the second cross-sectional area of ​​the metal pin 34 are respectively larger than the third cross-sectional area of ​​the metal pin 37. The first cross-sectional area of ​​the metal pin 31 is the area of ​​the metal pin 31 in the cross section perpendicular to the longitudinal direction of the metal pin 31. The second cross-sectional area of ​​the metal pin 34 is the area of ​​the metal pin 34 in the cross section perpendicular to the longitudinal direction of the metal pin 34. The third cross-sectional area of ​​the metal pin 37 is the area of ​​the metal pin 37 in the cross section perpendicular to the longitudinal direction of the metal pin 37.

[0048] refer to Figures 1 to 6, a first example of a method for manufacturing the power semiconductor device 1 according to the present embodiment will be described.

[0049] like Figure 2 As shown, in a first example of the method for manufacturing the power semiconductor device 1 of the present embodiment, the power semiconductor element 15 is bonded to the first main surface 10a of the conductive circuit pattern 10. Specifically, the power semiconductor element 15 is bonded to the first main surface 10a of the conductive circuit pattern 10 using a conductive bonding member (not shown). The conductive bonding member is, for example, solder such as lead-free solder, or a metal fine particle sintered body such as a silver fine particle sintered body, a copper fine particle sintered body, or a nickel fine particle sintered body.

[0050] like Figure 3 as well as Figure 4 As shown, a first example of a method for manufacturing a power semiconductor device 1 according to the present embodiment includes: providing a sealing member 20. The sealing member 20 seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor element 15. Holes 22, 23, and 24 are formed in the sealing member 20. The sealing member 20 is formed, for example, by transfer molding.

[0051] Specifically, if Figure 3 As shown, the mold 40 includes a fixed mold 41 and a movable mold 42. A conductive circuit pattern 10 joined with a power semiconductor element 15 is placed on the fixed mold 41. The movable mold 42 is moved to close the mold 40. Mold pins 43, 44, and 45 are provided in the movable mold 42. A mold pin 43 is arranged corresponding to the hole 22 of the sealing member 20. A mold pin 44 is arranged corresponding to the hole 23 of the sealing member 20. A mold pin 45 is arranged corresponding to the hole 24 of the sealing member 20. In the cavity of the mold 40 formed by the movable mold 42 and the fixed mold 41, a conductive circuit pattern 10 joined with a power semiconductor element 15 is placed. As shown Figure 4 As shown, a sealing resin material is injected into the cavity of the mold 40. The sealing resin material is hardened to obtain the sealing member 20. The power semiconductor element 15, the conductive circuit pattern 10 and the sealing member 20 are taken out from the mold 40.

[0052] like Figure 5 as well as Figure 6As shown, a first example of a method for manufacturing a power semiconductor device 1 according to the present embodiment includes: forming a conductive column 30 in a hole 22 of a sealing member 20; forming a conductive column 33 in a hole 23 of a sealing member 20; and forming a conductive column 36 in a hole 24 of a sealing member 20. The conductive column 30 is filled in the hole 22 of the sealing member 20 and connected to the first main surface 10a of the conductive circuit pattern 10. The conductive column 33 is filled in the hole 23 of the sealing member 20 and connected to the power semiconductor element 15 (specifically, the first front surface electrode 17). The conductive column 36 is filled in the hole 24 of the sealing member 20 and connected to the power semiconductor element 15 (specifically, the second front surface electrode 18). The process of forming the conductive column 30 in the hole 22 of the sealing member 20, the process of forming the conductive column 33 in the hole 23 of the sealing member 20, and the process of forming the conductive column 36 in the hole 24 of the sealing member 20 may be performed simultaneously.

[0053] The conductive column 30 includes a metal pin 31 and a conductive bonding member 32. The conductive bonding member 32 bonds the metal pin 31 to the conductive circuit pattern 10. The conductive bonding member 32 is filled between the pin side of the metal pin 31 and the side of the hole 22. The conductive bonding member 32 bonds the pin side of the metal pin 31 to the side of the hole 22 of the sealing member 20. The conductive column 33 includes a metal pin 34 and a conductive bonding member 35. The conductive bonding member 35 bonds the metal pin 34 to the power semiconductor element 15 (specifically, the first front surface electrode 17). The conductive bonding member 35 is filled between the pin side of the metal pin 34 and the side of the hole 23. The conductive bonding member 35 bonds the pin side of the metal pin 34 to the side of the hole 23 of the sealing member 20. The conductive column 36 includes a metal pin 37 and a conductive bonding member 38. The conductive bonding member 38 bonds the metal pin 37 to the power semiconductor element 15 (specifically, the second front surface electrode 18). The conductive bonding member 38 is filled between the pin side surface of the metal pin 37 and the side surface of the hole 24. The conductive bonding member 38 bonds the pin side surface of the metal pin 37 to the side surface of the hole 24 of the sealing member 20.

[0054] Specifically, the conductive pillars 30, 33, 36 are formed in the holes 22, 23, 24 through the following steps. Figure 5 As shown, a paste or powder conductive bonding precursor (conductive bond precursor) 32p is set in the hole 22. A paste or powder conductive bonding precursor 35p is set in the hole 23. A paste or powder conductive bonding precursor 38p is set in the hole 24. The conductive bonding precursors 32p, 35p, and 38p are, for example, a paste containing metal particles or conductive particles, a powder composed of metal particles or conductive particles, or a solder powder.

[0055] like Figure 6 As shown, the metal pin 31 is brought into contact with the conductive bonding precursor 32p. The conductive bonding precursor 32p is arranged between the metal pin 31 and the conductive circuit pattern 10, and between the pin side surface of the metal pin 31 and the side surface of the hole 22. The metal pin 34 is brought into contact with the conductive bonding precursor 35p. The conductive bonding precursor 35p is arranged between the metal pin 34 and the power semiconductor element 15 (specifically, the first front surface electrode 17), and between the pin side surface of the metal pin 34 and the side surface of the hole 23. The metal pin 37 is brought into contact with the conductive bonding precursor 38p. The conductive bonding precursor 38p is arranged between the metal pin 37 and the power semiconductor element 15 (specifically, the second front surface electrode 18), and between the pin side surface of the metal pin 37 and the side surface of the hole 24.

[0056] When the metal pins 31, 34, 37 are brought into contact with the conductive bonding precursors 32p, 35p, 38p, the conductive bonding precursors 32p, 35p, 38p are also formed on the portions of the metal pins 31, 34, 37 which are located on the far side from the conductive circuit pattern 10 relative to the second main surface 20a of the sealing member 20. Specifically, a mask (not shown) is arranged on the surface of the second main surface 20a of the sealing member 20. The mask is provided with a first opening, a second opening, and a third opening. The first opening has the same diameter as the hole 22 and is connected to the hole 22. The second opening has the same diameter as the hole 23 and is connected to the hole 23. The third opening has the same diameter as the hole 24 and is connected to the hole 24. When the metal pins 31, 34, 37 are brought into contact with the conductive bonding precursors 32p, 35p, 38p, the conductive bonding precursors 32p, 35p, 38p overflowing from the holes 22, 23, 24 are formed on the portions of the metal pins 31, 34, 37 located on the side far from the conductive circuit pattern 10 relative to the second main surface 20a of the sealing member 20. Thereafter, the mask is removed.

[0057] The conductive bonding precursor 32p is heated and cooled to change the conductive bonding precursor 32p into the conductive bonding member 32. The conductive bonding precursor 35p is heated and cooled to change the conductive bonding precursor 35p into the conductive bonding member 35. The conductive bonding precursor 38p is heated and cooled to change the conductive bonding precursor 38p into the conductive bonding member 38. The conductive bonding precursors 32p, 35p, and 38p may also be heated by heating all the components constituting the power semiconductor device 1 including the conductive circuit pattern 10, the power semiconductor element 15, and the sealing member 20. When current flows through the metal pins 31, 34, and 37, heat is generated in the metal pins 31, 34, and 37. The conductive bonding precursors 32p, 35p, and 38p may also be heated by utilizing the heat.

[0058] refer to Figures 1 to 4 as well as Figure 7, a second example of the method for manufacturing the power semiconductor device 1 of the present embodiment is described. The second example of the method for manufacturing the power semiconductor device 1 of the present embodiment includes the same steps as the first example of the method for manufacturing the power semiconductor device 1 of the present embodiment ( Figures 2 to 4 The process is similar to that shown in FIG. 1 , but differs mainly in the following points.

[0059] Specifically, the conductive pillars 30, 33, 36 are formed in the holes 22, 23, 24 through the following steps. Figure 7 As shown, a conductive bonding precursor 32q is disposed in the hole 22. A conductive bonding precursor 35q is disposed in the hole 23. A conductive bonding precursor 38q is disposed in the hole 24. The conductive bonding precursors 32q, 35q, and 38q are, for example, solder plates or solder rods.

[0060] The conductive bonding precursors 32q, 35q, 38q are heated to melt them. The conductive bonding precursors 32q, 35q, 38q may be heated by heating all the components constituting the power semiconductor device 1 including the conductive circuit pattern 10, the power semiconductor element 15, and the sealing member 20.

[0061] The metal pin 31 is immersed in the molten conductive bonding precursor 32q. The metal pin 34 is immersed in the molten conductive bonding precursor 35q. The metal pin 37 is immersed in the molten conductive bonding precursor 38q. The molten conductive bonding precursor 32q is arranged between the metal pin 31 and the conductive circuit pattern 10, and between the pin side surface of the metal pin 31 and the side surface of the hole 22. The molten conductive bonding precursor 35q is arranged between the metal pin 34 and the power semiconductor element 15 (specifically, the first front surface electrode 17), and between the pin side surface of the metal pin 34 and the side surface of the hole 23. The molten conductive bonding precursor 38q is arranged between the metal pin 37 and the power semiconductor element 15 (specifically, the second front surface electrode 18), and between the pin side surface of the metal pin 37 and the side surface of the hole 24. The molten conductive bonding precursors 32q, 35q, and 38q are cooled to become conductive bonding members 32, 35, and 38.

[0062] When the metal pins 31, 34, 37 are brought into contact with the conductive bonding precursors 32p, 35p, 38p, the conductive bonding precursors 32p, 35p, 38p are also formed on the portions of the metal pins 31, 34, 37 which are located on the far side from the conductive circuit pattern 10 relative to the second main surface 20a of the sealing member 20. Specifically, a mask (not shown) is arranged on the surface of the second main surface 20a of the sealing member 20. The mask is provided with a first opening, a second opening, and a third opening. The first opening has the same diameter as the hole 22 and is connected to the hole 22. The second opening has the same diameter as the hole 23 and is connected to the hole 23. The third opening has the same diameter as the hole 24 and is connected to the hole 24. When the metal pins 31, 34, 37 are brought into contact with the melted conductive bonding precursors 32p, 35p, 38p, the conductive bonding precursors 32p, 35p, 38p overflowing from the holes 22, 23, 24 are formed on the portions of the metal pins 31, 34, 37 located on the side far from the conductive circuit pattern 10 relative to the second main surface 20a of the sealing member 20. The melted conductive bonding precursors 32q, 35q, 38q are cooled to become conductive bonding members 32, 35, 38. Thereafter, the mask is removed.

[0063] refer to Figures 1 to 4 as well as Figure 8 , a third example of the method for manufacturing the power semiconductor device 1 of the present embodiment is described. The third example of the method for manufacturing the power semiconductor device 1 of the present embodiment includes the same steps as the first example of the method for manufacturing the power semiconductor device 1 of the present embodiment ( Figures 2 to 4 The process is similar to that shown in FIG. 1 , but differs mainly in the following points.

[0064] Specifically, the conductive pillars 30, 33, 36 are formed in the holes 22, 23, 24 through the following steps. Figure 8 As shown, a conductive bonding precursor 32r is applied to the metal pin 31 by coating or evaporation. A conductive bonding precursor 35r is applied to the metal pin 34 by coating or evaporation. A conductive bonding precursor 38r is applied to the metal pin 37 by coating or evaporation. The conductive bonding precursors 32r, 35r, and 38r are, for example, conductive paste containing a resin and conductive particles (for example, silver particles, copper particles, nickel particles, or gold particles) dispersed in the resin, or a solder coating.

[0065] The metal pin 31 to which the conductive bonding precursor 32r is applied is inserted into the hole 22. The metal pin 34 to which the conductive bonding precursor 35r is applied is inserted into the hole 23. The metal pin 37 to which the conductive bonding precursor 38r is applied is inserted into the hole 24. The conductive bonding precursor 32r is arranged between the metal pin 31 and the conductive circuit pattern 10, and between the pin side surface of the metal pin 31 and the side surface of the hole 22. The conductive bonding precursor 35p is arranged between the metal pin 34 and the power semiconductor element 15 (specifically, the first front surface electrode 17), and between the pin side surface of the metal pin 34 and the side surface of the hole 23. The conductive bonding precursor 38r is arranged between the metal pin 37 and the power semiconductor element 15 (specifically, the second front surface electrode 18), and between the pin side surface of the metal pin 37 and the side surface of the hole 24.

[0066] The conductive bonding precursors 32r, 35r, 38r are heated and cooled to become the conductive bonding members 32, 35, 38. The conductive bonding precursors 32r, 35r, 38r may be heated by heating all the members constituting the power semiconductor device 1 including the conductive circuit pattern 10, the power semiconductor element 15, and the sealing member 20. When current flows through the metal pins 31, 34, 37, heat is generated in the metal pins 31, 34, 37. The conductive bonding precursors 32r, 35r, 38r may be heated by utilizing the heat.

[0067] refer to Fig. 9 A power semiconductor module 2 according to the present embodiment will be described. The power semiconductor module 2 includes a power semiconductor device 1 and a printed wiring board 50 .

[0068] The printed wiring substrate 50 includes an insulating substrate 51 and wiring 52. The insulating substrate 51 is, for example, a glass epoxy substrate or a glass composite substrate. The glass epoxy substrate is, for example, formed by thermally curing a glass woven fabric impregnated with epoxy resin. The glass composite substrate is, for example, formed by thermally curing a glass non-woven fabric impregnated with epoxy resin. The insulating substrate 51 includes a third main surface 51a facing the second main surface 20a of the sealing member 20, and a fourth main surface 51b on the side opposite to the third main surface 51a.

[0069] The wiring 52 is, for example, provided on the fourth main surface 51b of the insulating substrate 51. The wiring 52 may be provided on the third main surface 51a of the insulating substrate 51, or may be embedded in the insulating substrate 51. The wiring 52 is, for example, a metal layer such as copper foil. The wiring 52 includes a first wiring portion 53, a second wiring portion 54, and a third wiring portion 55. The first wiring portion 53, the second wiring portion 54, and the third wiring portion 55 are spaced apart from each other. An electronic component (not shown) connected to the wiring 52 is mounted on the printed wiring substrate 50. The electronic component is, for example, a resistor, a capacitor, or a transformer.

[0070] The power semiconductor device 1 is mounted on a printed wiring board 50. Specifically, the conductive column 30 is fixed to the first wiring portion 53 using, for example, a conductive bonding member 32. The conductive column 33 is fixed to the second wiring portion 54 using, for example, a conductive bonding member 35. The conductive column 36 is fixed to the third wiring portion 55 using, for example, a conductive bonding member 38.

[0071] refer to Fig.10 , a power semiconductor module 2a of a modified example of the present embodiment is described. The power semiconductor module 2a includes a power semiconductor device 1a of a modified example of the present embodiment and a printed wiring substrate 50a. In the printed wiring substrate 50a, wiring 52 is provided on the third main surface 51a of the insulating substrate 51. In the power semiconductor device 1a, the end of the conductive column 30 located far from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20. The end of the conductive column 33 located far from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20. The end of the conductive column 36 located far from the first main surface 10a of the conductive circuit pattern 10 is flush with the second main surface 20a of the sealing member 20. The power semiconductor device 1a is mounted on the surface of the printed wiring substrate 50a.

[0072] The effects of the power semiconductor devices 1 and 1 a according to the present embodiment will be described.

[0073] The power semiconductor device 1, 1a of the present embodiment includes a conductive circuit pattern 10, a power semiconductor element 15, a sealing member 20, a first conductive column (conductive column 30) and a second conductive column (conductive column 33 or conductive column 36). The conductive circuit pattern 10 includes a first main surface 10a. The power semiconductor element 15 is bonded to the first main surface 10a of the conductive circuit pattern 10. The sealing member 20 seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor element 15. The first conductive column is filled in the first hole (hole 22) formed in the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10. The second conductive column is filled in the second hole (hole 23 or hole 24) formed in the sealing member 20 and is connected to the power semiconductor element 15. The first conductive column includes a first metal pin (metal pin 31) and a first conductive bonding member (conductive bonding member 32). The second conductive column includes a second metal pin (metal pin 34 or metal pin 37) and a second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). The first conductive bonding member is filled between the first pin side surface of the first metal pin and the first side surface of the first hole, and the first metal pin is bonded to the conductive circuit pattern 10. The second conductive bonding member is filled between the second pin side surface of the second metal pin and the second side surface of the second hole, and the second metal pin is bonded to the power semiconductor element 15.

[0074] The first conductive column (conductive column 30) includes a first metal pin (metal pin 31), and the second conductive column (conductive column 33 or conductive column 36) includes a second metal pin (metal pin 34 or metal pin 37). Therefore, the first height of the first conductive column and the second height of the second conductive column can be increased. In addition, the first metal pin is firmly bonded to the conductive circuit pattern 10 and the sealing member 20 through the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor element 15 and the sealing member 20 through the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). The reliability of the power semiconductor device 1, 1a can be improved.

[0075] Compared to the case where wires are led out from the conductive circuit pattern 10 and the power semiconductor element 15 , the first conductive pillar (conductive pillar 30 ) and the second conductive pillar (conductive pillar 33 or conductive pillar 36 ) can reduce the size of the power semiconductor device 1 , 1 a .

[0076] In the power semiconductor device 1, 1a of the present embodiment, the first metal pin (metal pin 31) and the second metal pin (metal pin 34 or metal pin 37) are formed of copper, aluminum, gold or silver. Therefore, the first metal pin and the second metal pin have high thermal conductivity and low electrical resistivity. The heat generated in the power semiconductor element 15 can be dissipated efficiently. The reliability of the power semiconductor device 1, 1a can be improved. More current can flow in the power semiconductor element 15. The power capacity of the power semiconductor device 1, 1a can be increased.

[0077] In the power semiconductor device 1, 1a of the present embodiment, the first conductive bonding member (conductive bonding member 32) and the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38) are formed of solder or metal fine particle sintered body. Therefore, the first metal pin (metal pin 31) is bonded to the conductive circuit pattern 10 and the sealing member 20 through the first conductive bonding member. The second metal pin (conductive bonding member 32 or conductive bonding member 35) is bonded to the power semiconductor element 15 and the sealing member 20 through the second conductive bonding member. The reliability of the power semiconductor device 1, 1a can be improved.

[0078] In the power semiconductor device 1 of the present embodiment, the sealing member 20 includes a second main surface 20a that is away from the first main surface 10a of the conductive circuit pattern 10 in the normal direction of the first main surface 10a of the conductive circuit pattern 10. The first end of the first conductive column (conductive column 30) and the second end of the second conductive column (conductive column 33 or conductive column 36) located far from the first main surface 10a of the conductive circuit pattern 10 protrude from the second main surface 20a of the sealing member 20.

[0079] Therefore, when the power semiconductor device 1 including the power semiconductor element 15 is mounted on the printed wiring board 50 on which the electronic components are mounted, the distance between the power semiconductor element 15 and the electronic components can be increased. The electronic components can be protected from the heat generated in the power semiconductor element 15. The power semiconductor device 1 can be applied to more electrical products.

[0080] In the power semiconductor device 1a of the present embodiment, the sealing member 20 includes a second main surface 20a that is away from the first main surface 10a in the normal direction of the first main surface 10a of the conductive circuit pattern 10. The first end of the first conductive column (conductive column 30) and the second end of the second conductive column (conductive column 33 or conductive column 36) located far from the first main surface 10a of the conductive circuit pattern 10 are flush with the second main surface 20a of the sealing member 20.

[0081] Therefore, the power semiconductor device 1a including the power semiconductor element 15 can be mounted on the surface of the printed wiring board 50a. The power semiconductor device 1a can be easily mounted on the printed wiring board 50a.

[0082] The manufacturing method of the power semiconductor device 1, 1a of the present embodiment includes: bonding the power semiconductor element 15 to the first main surface 10a of the conductive circuit pattern 10; and providing a sealing member 20 that seals the first main surface 10a of the conductive circuit pattern 10 and the power semiconductor element 15 and forms a first hole (hole 22) and a second hole (hole 23 or hole 24). The manufacturing method of the power semiconductor device 1, 1a of the present embodiment includes: forming a first conductive column (conductive column 30) in the first hole of the sealing member 20; and forming a second conductive column (conductive column 33 or conductive column 36) in the second hole of the sealing member 20. Providing the sealing member 20 includes: placing the conductive circuit pattern 10 bonded with the power semiconductor element 15 in the cavity of the mold 40 provided with the first mold pin (mold pin 43) and the second mold pin (mold pin 44 or mold pin 45); injecting a sealing resin material into the cavity of the mold 40; and hardening the sealing resin material to obtain the sealing member 20. A first mold pin is disposed corresponding to the first hole of the sealing member 20. A second mold pin is disposed corresponding to the second hole of the sealing member 20.

[0083] The first conductive column (conductive column 30) is filled in the first hole (hole 22) of the sealing member 20 and is connected to the first main surface 10a of the conductive circuit pattern 10. The second conductive column (conductive column 33 or conductive column 36) is filled in the second hole (hole 23 or hole 24) of the sealing member 20 and is connected to the power semiconductor element 15. The first conductive column includes a first metal pin (metal pin 31) and a first conductive bonding member (conductive bonding member 32). The second conductive column includes a second metal pin (metal pin 34 or metal pin 37) and a second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). The first conductive bonding member is filled between the first pin side surface of the first metal pin and the first side surface of the first hole, and the first metal pin is bonded to the conductive circuit pattern 10. The second conductive bonding member is filled between the second pin side surface of the second metal pin and the second side surface of the second hole, and the second metal pin is bonded to the power semiconductor element 15.

[0084] The first conductive column (conductive column 30) includes a first metal pin (metal pin 31), and the second conductive column (conductive column 33 or conductive column 36) includes a second metal pin (metal pin 34 or metal pin 37). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a higher first conductive column and a higher second conductive column can be formed. In addition, the first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 through the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor element 15 and the sealing member 20 through the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained.

[0085] In the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, after providing the sealing member 20 formed with the first hole (hole 22) and the second hole (hole 23 or hole 24), the first conductive column (conductive column 30) and the second conductive column (conductive column 33 or conductive column 36) are formed. The cross-sectional area (or diameter) of the first conductive column is determined in advance by the cross-sectional area (or diameter) of the first hole. The first conductive column does not expand larger than the cross-sectional area (or diameter) of the first hole in the in-plane direction parallel to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area (or diameter) of the second conductive column is determined in advance by the cross-sectional area (or diameter) of the second hole. The second conductive column does not expand larger than the cross-sectional area (or diameter) of the second hole in the in-plane direction parallel to the first main surface 10a of the conductive circuit pattern 10. Therefore, the interval between the first conductive column and the second conductive column can be reduced. According to the method for manufacturing the power semiconductor device 1 , 1 a of the present embodiment, it is possible to obtain a miniaturized power semiconductor device 1 , 1 a .

[0086] The first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36) can miniaturize the power semiconductor device 1, 1a compared to the case where wires are led out from the conductive circuit pattern 10 and the power semiconductor element 15. According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a miniaturized power semiconductor device 1, 1a can be obtained.

[0087] In the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, forming the first conductive column (conductive column 30) in the first hole (hole 22) includes: setting a first conductive bonding precursor (conductive bonding precursor 32p) in a paste or powder form in the first hole; making the first metal pin (metal pin 31) contact with the first conductive bonding precursor, and arranging the first conductive bonding precursor between the first metal pin and the conductive circuit pattern 10 and between the first pin side surface of the first metal pin and the first side surface of the first hole; and heating and cooling the first conductive bonding precursor to convert the first conductive bonding precursor into a first conductive bonding component (conductive bonding component 32).

[0088] The formation of the second conductive column (conductive column 33 or conductive column 36) in the second hole (hole 23 or hole 24) includes: setting a second conductive bonding precursor (conductive bonding precursor 35p or conductive bonding precursor 38p) in a paste or powder form in the second hole; making the second metal pin (metal pin 34 or metal pin 37) contact the second conductive bonding precursor, and arranging the second conductive bonding precursor between the second metal pin and the power semiconductor element 15 and between the second pin side surface of the second metal pin and the second side surface of the second hole; and heating and cooling the second conductive bonding precursor to convert the second conductive bonding precursor into a second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).

[0089] The first conductive column (conductive column 30) includes a first metal pin (metal pin 31), and the second conductive column (conductive column 33 or conductive column 36) includes a second metal pin (metal pin 34 or metal pin 37). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a higher first conductive column and a higher second conductive column can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 through the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor element 15 and the sealing member 20 through the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, the reliability of the power semiconductor device 1, 1a can be improved. According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a miniaturized power semiconductor device 1, 1a can be obtained.

[0090] In the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, forming the first conductive column (conductive column 30) in the first hole (hole 22) includes: setting the first conductive bonding precursor (conductive bonding precursor 32q) in the first hole; heating the first conductive bonding precursor to melt the first conductive bonding precursor; immersing the first metal pin (metal pin 31) in the molten first conductive bonding precursor, and arranging the molten first conductive bonding precursor between the first metal pin and the conductive circuit pattern 10 and between the first pin side of the first metal pin and the first side of the first hole; and cooling the first conductive bonding precursor to convert the first conductive bonding precursor into a first conductive bonding component (conductive bonding component 32).

[0091] Forming a second conductive column (conductive column 33 or conductive column 36) in the second hole (hole 23 or hole 24) includes: setting a second conductive bonding precursor (conductive bonding precursor 35q or conductive bonding precursor 38q) in the second hole; heating the second conductive bonding precursor to melt the second conductive bonding precursor; immersing the second metal pin (metal pin 34 or metal pin 37) in the molten second conductive bonding precursor, and arranging the molten second conductive bonding precursor between the second metal pin and the power semiconductor element 15 and between the second pin side of the second metal pin and the second side of the second hole; and cooling the second conductive bonding precursor to convert the second conductive bonding precursor into a second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).

[0092] The first conductive column (conductive column 30) includes a first metal pin (metal pin 31), and the second conductive column (conductive column 33 or conductive column 36) includes a second metal pin (metal pin 34 or metal pin 37). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a higher first conductive column and a higher second conductive column can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 through the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor element 15 and the sealing member 20 through the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained. According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a miniaturized power semiconductor device 1, 1a can be obtained.

[0093] In the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, forming the first conductive column (conductive column 30) in the first hole (hole 22) includes: applying the first conductive bonding precursor (conductive bonding precursor 32r) to the first metal pin (metal pin 31); inserting the first metal pin applied with the first conductive bonding precursor into the first hole, and arranging the first conductive bonding precursor between the first metal pin and the conductive circuit pattern 10 and between the first pin side surface of the first metal pin and the first side surface of the first hole; and heating and cooling the first conductive bonding precursor to convert the first conductive bonding precursor into a first conductive bonding component (conductive bonding component 32).

[0094] Forming a second conductive column (conductive column 33 or conductive column 36) in the second hole (hole 23 or hole 24) includes: applying a second conductive bonding precursor (conductive bonding precursor 35r or conductive bonding precursor 38r) on a second metal pin (metal pin 34 or metal pin 37); inserting the second metal pin applied with the second conductive bonding precursor into the second hole, arranging the second conductive bonding precursor between the second metal pin and the power semiconductor element 15 and between the second pin side surface of the second metal pin and the second side surface of the second hole; and heating and cooling the second conductive bonding precursor to convert the second conductive bonding precursor into a second conductive bonding member (conductive bonding member 35 or conductive bonding member 38).

[0095] The first conductive column (conductive column 30) includes a first metal pin (metal pin 31), and the second conductive column (conductive column 33 or conductive column 36) includes a second metal pin (metal pin 34 or metal pin 37). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a higher first conductive column and a higher second conductive column can be formed. The first metal pin is bonded to the conductive circuit pattern 10 and the sealing member 20 through the first conductive bonding member (conductive bonding member 32). The second metal pin is bonded to the power semiconductor element 15 and the sealing member 20 through the second conductive bonding member (conductive bonding member 35 or conductive bonding member 38). According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a power semiconductor device 1, 1a with improved reliability can be obtained. According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, a miniaturized power semiconductor device 1, 1a can be obtained.

[0096] In the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, the first conductive bonding precursor (conductive bonding precursor 32p, 32r) is heated by the heat generated in the first metal pin (metal pin 31). The second conductive bonding precursor (conductive bonding precursor 35p, 35r or conductive bonding precursor 38p, 38r) is heated by the heat generated in the second metal pin (metal pin 34 or metal pin 37).

[0097] Therefore, the first conductive bonding precursor (conductive bonding precursor 32p, 32r) and the second conductive bonding precursor (conductive bonding precursor 35p, 35r or conductive bonding precursor 38p, 38r) can be heated intensively. The thermal damage to the components constituting the power semiconductor device 1, 1a such as the power semiconductor element 15 or the sealing member 20 can be reduced. According to the manufacturing method of the power semiconductor device 1, 1a of the present embodiment, the power semiconductor device 1, 1a with improved reliability can be obtained.

[0098] Implementation method 2.

[0099] refer to Fig.11 , a power semiconductor device 1b of embodiment 2 is described. The power semiconductor device 1b of this embodiment has the same structure as the power semiconductor device 1 of embodiment 1, and the manufacturing method of the power semiconductor device 1b of this embodiment has the same steps as the manufacturing method of the power semiconductor device 1 of embodiment 1, but mainly differs in the following points.

[0100] In the power semiconductor device 1b and the manufacturing method thereof of the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has a T-shape. The metal pin 31 includes a body 61 and a head 62, and the head 62 is provided at the far end of the body 61 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 62 is larger than the cross-sectional area of ​​the body 61. The cross-sectional area of ​​the body 61 is the area of ​​the body 61 in the cross section perpendicular to the longitudinal direction of the metal pin 31. The cross-sectional area of ​​the head 62 is the area of ​​the head 62 in the cross section perpendicular to the longitudinal direction of the metal pin 31.

[0101] The cross section of the metal pin 34 along the longitudinal direction of the metal pin 34 has a T-shape. The metal pin 34 includes a body 64 and a head 65, and the head 65 is provided at the far end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 65 is larger than the cross-sectional area of ​​the body 64. The cross-sectional area of ​​the body 64 is the area of ​​the body 64 in the cross section perpendicular to the longitudinal direction of the metal pin 34. The cross-sectional area of ​​the head 65 is the area of ​​the head 65 in the cross section perpendicular to the longitudinal direction of the metal pin 34.

[0102] The cross section of the metal pin 37 along the longitudinal direction of the metal pin 37 has a T-shape. The metal pin 37 includes a body 67 and a head 68, and the head 68 is provided at the far end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 68 is larger than the cross-sectional area of ​​the body 67. The cross-sectional area of ​​the body 67 is the area of ​​the body 67 in the cross section perpendicular to the longitudinal direction of the metal pin 37. The cross-sectional area of ​​the head 68 is the area of ​​the head 68 in the cross section perpendicular to the longitudinal direction of the metal pin 37.

[0103] like Fig.12 As shown, in the power semiconductor device 1c and the manufacturing method thereof according to the modified example of the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has an I-shape. The metal pin 31 includes a body 61, a head 62 provided at the distal end of the body 61 relative to the first main surface 10a of the conductive circuit pattern 10, and a foot 63 provided at the proximal end of the body 61 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 62 is larger than the cross-sectional area of ​​the body 61. The cross-sectional area of ​​the foot 63 is larger than the cross-sectional area of ​​the body 61. The cross-sectional area of ​​the foot 63 is the area of ​​the foot 63 in the cross section perpendicular to the longitudinal direction of the metal pin 31.

[0104] The cross section of the metal pin 34 along the longitudinal direction of the metal pin 34 has an I-shape. The metal pin 34 includes a body 64, a head 65 provided at the distal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10, and a foot 66 provided at the proximal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 65 is larger than the cross-sectional area of ​​the body 64. The cross-sectional area of ​​the foot 66 is larger than the cross-sectional area of ​​the body 64. The cross-sectional area of ​​the foot 66 is the area of ​​the foot 66 in the cross section perpendicular to the longitudinal direction of the metal pin 34.

[0105] The cross section of the metal pin 37 along the longitudinal direction of the metal pin 37 has an I-shape. The metal pin 37 includes a body 67, a head 68 provided at the distal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10, and a foot 69 provided at the proximal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​the head 68 is larger than the cross-sectional area of ​​the body 67. The cross-sectional area of ​​the foot 69 is larger than the cross-sectional area of ​​the body 67. The cross-sectional area of ​​the foot 69 is the area of ​​the foot 69 in the cross section perpendicular to the longitudinal direction of the metal pin 37.

[0106] The power semiconductor devices 1 b and 1 c and the manufacturing method thereof according to the present embodiment have the following effects in addition to the effects of the power semiconductor device 1 and the manufacturing method thereof according to the first embodiment.

[0107] In the power semiconductor devices 1b, 1c and their manufacturing method of this embodiment, the first cross-section of the first metal pin along the first longitudinal direction of the first metal pin (metal pin 31) and the second cross-section of the second metal pin along the second longitudinal direction of the second metal pin (metal pin 34 or metal pin 37) have a T-shaped or I-shaped shape.

[0108] Therefore, when the first metal pin (metal pin 31) is inserted into the first hole (hole 22), the first metal pin presses the first conductive bonding precursor (conductive bonding precursor 32p, 32q, see FIG. Figures 5 to 7 ) included in the pores. The first metal pin is more firmly bonded to the conductive circuit pattern 10 and the sealing member 20. When the second metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), the second metal pin presses the second conductive bonding precursor (conductive bonding precursor 35p, 35q or conductive bonding precursor 38p, 38q, refer to Figures 5 to 7 ) The second metal pin is more firmly bonded to the power semiconductor element 15 and the sealing member 20. The reliability of the power semiconductor devices 1b and 1c can be improved.

[0109] Implementation method 3.

[0110] refer to Fig.13 , a power semiconductor device 1d of embodiment 3 is described. The power semiconductor device 1d of this embodiment has the same structure as the power semiconductor device 1 of embodiment 1, and the manufacturing method of the power semiconductor device 1d of this embodiment has the same steps as the manufacturing method of the power semiconductor device 1 of embodiment 1, but mainly differs in the following points.

[0111] In the power semiconductor device 1d and the manufacturing method thereof of the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has a tapered shape that becomes thinner as it approaches the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​one end of the metal pin 31 located on the far side from the first main surface 10a of the conductive circuit pattern 10 is larger than the cross-sectional area of ​​the other end of the metal pin 31 located on the near side from the first main surface 10a of the conductive circuit pattern 10.

[0112] The cross section of the metal pin 34 along the longitudinal direction of the metal pin 34 has a tapered shape that becomes thinner as it approaches the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​one end of the metal pin 34 located far from the first main surface 10a of the conductive circuit pattern 10 (or the power semiconductor element 15) is larger than the cross-sectional area of ​​the other end of the metal pin 34 located near the first main surface 10a of the conductive circuit pattern 10 (or the power semiconductor element 15).

[0113] The cross section of the metal pin 37 along the longitudinal direction of the metal pin 37 has a tapered shape that becomes thinner as it approaches the first main surface 10a of the conductive circuit pattern 10. The cross-sectional area of ​​one end of the metal pin 37 located far from the first main surface 10a of the conductive circuit pattern 10 (or the power semiconductor element 15) is larger than the cross-sectional area of ​​the other end of the metal pin 37 located near the first main surface 10a of the conductive circuit pattern 10 (or the power semiconductor element 15).

[0114] like Fig.14 As shown, in the power semiconductor device 1e and the manufacturing method thereof according to the modified example of the present embodiment, the cross section of the metal pin 31 along the longitudinal direction of the metal pin 31 has a sawtooth shape that becomes tapered as it approaches the first main surface 10a of the conductive circuit pattern 10. The cross section of the metal pin 34 along the longitudinal direction of the metal pin 34 has a sawtooth shape that becomes tapered as it approaches the first main surface 10a of the conductive circuit pattern 10. The cross section of the metal pin 37 along the longitudinal direction of the metal pin 37 has a sawtooth shape that becomes tapered as it approaches the first main surface 10a of the conductive circuit pattern 10.

[0115] The power semiconductor devices 1d and 1e and the manufacturing method thereof according to the present embodiment have the following effects in addition to the effects of the power semiconductor device 1 and the manufacturing method thereof according to the first embodiment.

[0116] In the power semiconductor devices 1d and 1e of the present embodiment, the first cross-section of the first metal pin along the first longitudinal direction of the first metal pin (metal pin 31) and the second cross-section of the second metal pin along the second longitudinal direction of the second metal pin (metal pin 34 or metal pin 37) have a conical shape or a sawtooth shape that becomes tapered as they approach the first main surface 10a of the conductive circuit pattern 10.

[0117] Therefore, when the first metal pin (metal pin 31) is inserted into the first hole (hole 22), the first metal pin presses the conductive bonding precursor (conductive bonding precursor 32p, 32q, see Figures 5 to 7 ) included in the pores. The first metal pin is more firmly bonded to the conductive circuit pattern 10 and the sealing member 20. When the second metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), the second metal pin presses the conductive bonding precursor (conductive bonding precursor 35p, 35q or conductive bonding precursor 38p, 38q, refer to Figures 5 to 7 ) The second metal pin is more firmly bonded to the power semiconductor element 15 and the sealing member 20. The reliability of the power semiconductor devices 1d and 1e can be improved.

[0118] In addition, when the first metal pin (metal pin 31) is inserted into the first hole (hole 22), even if the first longitudinal center axis of the first metal pin deviates from the second longitudinal center axis of the first hole, the first longitudinal center axis of the first metal pin is aligned with the second longitudinal center axis of the first hole through the side surface of the first metal pin. The first conductive bonding member (conductive bonding member 32) is uniformly formed around the first metal pin. When the second metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), even if the third longitudinal center axis of the second metal pin deviates from the fourth longitudinal center axis of the second hole, the third longitudinal center axis of the second metal pin is aligned with the fourth longitudinal center axis of the second hole through the side surface of the second metal pin. The second conductive bonding member (conductive bonding member 35 or conductive bonding member 38) is uniformly formed around the second metal pin. Therefore, even if stress is applied to the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36) due to a change in ambient temperature, etc., stress is prevented from being locally strongly applied to a portion of the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36). The reliability of the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36) is improved, and the reliability of the power semiconductor devices 1d and 1e can be improved. The productivity of the power semiconductor devices 1d and 1e can be improved.

[0119] Implementation method 4.

[0120] refer to Fig.15 , a power semiconductor device 1f of embodiment 4 is described. The power semiconductor device 1f of this embodiment has the same structure as the power semiconductor device 1 of embodiment 1, and the manufacturing method of the power semiconductor device 1f of this embodiment has the same steps as the manufacturing method of the power semiconductor device 1 of embodiment 1, but mainly differs in the following points.

[0121] In the power semiconductor device 1f and the manufacturing method thereof of the present embodiment, the diameter of the proximal end of the hole 22 relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the diameter of the distal end of the hole 22 relative to the first main surface 10a of the conductive circuit pattern 10. The hole 22 positions the metal pin 31 in the normal direction of the first main surface 10a of the conductive circuit pattern 10. Specifically, the hole 22 has a tapered shape that becomes thinner as it approaches the first main surface 10a of the conductive circuit pattern 10. The proximal end of the metal pin 31 relative to the first main surface 10a of the conductive circuit pattern 10 abuts against the side surface of the hole 22, whereby the metal pin 31 is positioned in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0122] The diameter of the proximal end of the hole 23 relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the diameter of the distal end of the hole 23 relative to the first main surface 10a of the conductive circuit pattern 10. The hole 23 positions the metal pin 34 in the normal direction of the first main surface 10a of the conductive circuit pattern 10. Specifically, the hole 23 has a tapered shape that becomes thinner as it approaches the first main surface 10a of the conductive circuit pattern 10. The proximal end of the metal pin 34 relative to the first main surface 10a of the conductive circuit pattern 10 abuts against the side surface of the hole 23, whereby the metal pin 34 is positioned in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0123] The diameter of the proximal end of the hole 24 relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than the diameter of the distal end of the hole 24 relative to the first main surface 10a of the conductive circuit pattern 10. The hole 24 positions the metal pin 37 in the normal direction of the first main surface 10a of the conductive circuit pattern 10. Specifically, the hole 24 has a tapered shape that becomes thinner as it approaches the first main surface 10a of the conductive circuit pattern 10. The proximal end of the metal pin 37 relative to the first main surface 10a of the conductive circuit pattern 10 abuts against the side surface of the hole 24, whereby the metal pin 37 is positioned in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0124] like Fig.16 As shown, in the power semiconductor device 1g and the manufacturing method thereof according to the modified example of the present embodiment, the metal pin 31 includes a body 61 and a head 62, and the head 62 is provided at the distal end of the body 61 relative to the first main surface 10a of the conductive circuit pattern 10. The diameter of the head 62 is larger than the diameter of the body 61. A small diameter portion 71 and a large diameter portion 72 communicating with the small diameter portion 71 are provided in the hole 22. The large diameter portion 72 has a larger diameter than the small diameter portion 71, and is located farther from the first main surface 10a of the conductive circuit pattern 10 than the small diameter portion 71.

[0125] The diameter of the body 61 of the metal pin 31 is smaller than the diameter of the small diameter portion 71 of the hole 22, and smaller than the diameter of the large diameter portion 72 of the hole 22. The diameter of the head 62 of the metal pin 31 is larger than the diameter of the small diameter portion 71 of the hole 22, and smaller than the diameter of the large diameter portion 72 of the hole 22. The body 61 of the metal pin 31 is accommodated in the small diameter portion 71 of the hole 22. The head 62 of the metal pin 31 is accommodated in the large diameter portion 72 of the hole 22. The head 62 of the metal pin 31 abuts against the bottom surface of the large diameter portion 72 of the hole 22, whereby the metal pin 31 is positioned in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0126] The metal pin 34 includes a body 64 and a head 65, the head 65 being provided at the distal end of the body 64 relative to the first main surface 10a of the conductive circuit pattern 10. The diameter of the head 65 is larger than the diameter of the body 64. A small diameter portion 74 and a large diameter portion 75 communicating with the small diameter portion 74 are provided in the hole 23. The large diameter portion 75 has a larger diameter than the small diameter portion 74 and is located on the distal side from the first main surface 10a of the conductive circuit pattern 10 compared to the small diameter portion 74.

[0127] The diameter of the body 64 of the metal pin 34 is smaller than the diameter of the small diameter portion 74 of the hole 23, and smaller than the diameter of the large diameter portion 75 of the hole 23. The diameter of the head 65 of the metal pin 34 is larger than the diameter of the small diameter portion 74 of the hole 23, and smaller than the diameter of the large diameter portion 75 of the hole 23. The body 64 of the metal pin 34 is accommodated in the small diameter portion 74 of the hole 23. The head 65 of the metal pin 34 is accommodated in the large diameter portion 75 of the hole 23. The head 65 of the metal pin 34 abuts against the bottom surface of the large diameter portion 75 of the hole 23, whereby the metal pin 34 is positioned in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0128] The metal pin 37 includes a body 67 and a head 68, and the head 68 is provided at the distal end of the body 67 relative to the first main surface 10a of the conductive circuit pattern 10. The diameter of the head 68 is larger than the diameter of the body 67. A small diameter portion 77 and a large diameter portion 78 communicating with the small diameter portion 77 are provided in the hole 24. The large diameter portion 78 has a larger diameter than the small diameter portion 77, and is located farther from the first main surface 10a of the conductive circuit pattern 10 than the small diameter portion 77.

[0129] The diameter of the body 67 of the metal pin 37 is smaller than the diameter of the small diameter portion 77 of the hole 24, and smaller than the diameter of the large diameter portion 78 of the hole 24. The diameter of the head 68 of the metal pin 37 is larger than the diameter of the small diameter portion 77 of the hole 24, and smaller than the diameter of the large diameter portion 78 of the hole 24. The body 67 of the metal pin 37 is accommodated in the small diameter portion 77 of the hole 24. The head 68 of the metal pin 37 is accommodated in the large diameter portion 78 of the hole 24. The head 68 of the metal pin 37 abuts against the bottom surface of the large diameter portion 78 of the hole 24, whereby the metal pin 37 is positioned in the normal direction of the first main surface 10a of the conductive circuit pattern 10.

[0130] The power semiconductor devices 1f and 1g and the manufacturing method thereof according to the present embodiment have the following effects in addition to the effects of the power semiconductor device 1 and the manufacturing method thereof according to the first embodiment.

[0131] In the power semiconductor devices 1f and 1g of the present embodiment and the manufacturing method thereof, a first diameter of a first proximal end of a first hole (hole 22) relative to a first main surface 10a of a conductive circuit pattern 10 is smaller than a second diameter of a first distal end of the first hole relative to the first main surface 10a of the conductive circuit pattern 10. The first hole positions a first metal pin (metal pin 31) in a normal direction to the first main surface 10a of the conductive circuit pattern 10. A third diameter of a second proximal end of a second hole (hole 23 or hole 24) relative to the first main surface 10a of the conductive circuit pattern 10 is smaller than a fourth diameter of a second distal end of the second hole relative to the first main surface 10a of the conductive circuit pattern 10. The second hole positions a second metal pin (metal pin 34 or metal pin 37) in a normal direction to the first main surface 10a of the conductive circuit pattern 10.

[0132] Therefore, the first interval (interval G) between the conductive circuit pattern 10 and the first metal pin (metal pin 31) can be appropriately determined. 1 ), and a second gap (gap G) between the power semiconductor element 15 and the second metal pin (metal pin 34 or metal pin 37) 2 Or interval G 3 ). The reliability of the electrical connection between the conductive circuit pattern 10 and the first metal pin and the reliability of the electrical connection between the power semiconductor element 15 and the second metal pin can be improved. The reliability of the power semiconductor devices 1f and 1g can be improved.

[0133] In the power semiconductor devices 1 f and 1 g and the manufacturing method thereof according to the present embodiment, the first hole (hole 22 ) and the second hole (hole 23 or hole 24 ) have a tapered shape that tapers as they approach the first main surface 10 a of the conductive circuit pattern 10 .

[0134] Therefore, the first interval between the conductive circuit pattern 10 and the first metal pin (metal pin 31), and the second interval between the power semiconductor element 15 and the second metal pin (metal pin 34 or metal pin 37) can be appropriately determined. The reliability of the electrical connection between the conductive circuit pattern 10 and the first metal pin, and the reliability of the electrical connection between the power semiconductor element 15 and the second metal pin can be improved. The reliability of the power semiconductor devices 1f and 1g can be improved.

[0135] In addition, when the first metal pin (metal pin 31) is inserted into the first hole (hole 22), even if the first longitudinal center axis of the first metal pin deviates from the second longitudinal center axis of the first hole, the first longitudinal center axis of the first metal pin is aligned with the second longitudinal center axis of the first hole through the side surface of the first hole. The first conductive bonding member (conductive bonding member 32) is uniformly formed around the first metal pin. When the second metal pin (metal pin 34 or metal pin 37) is inserted into the second hole (hole 23 or hole 24), even if the third longitudinal center axis of the second metal pin deviates from the fourth longitudinal center axis of the second hole, the third longitudinal center axis of the second metal pin is aligned with the fourth longitudinal center axis of the second hole through the side surface of the second hole. The second conductive bonding member (conductive bonding member 35 or conductive bonding member 38) is uniformly formed around the second metal pin. Therefore, even if stress is applied to the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36) due to a change in ambient temperature, etc., stress is prevented from being locally strongly applied to a portion of the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36). The reliability of the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36) is improved, and the reliability of the power semiconductor devices 1f and 1g can be improved. The productivity of the power semiconductor devices 1f and 1g can be improved.

[0136] In the power semiconductor devices 1f and 1g of the present embodiment and the manufacturing method thereof, the first metal pin (metal pin 31) includes a first body (body 61) and a first head (head 62) provided at the third distal end of the first body relative to the first main surface 10a of the conductive circuit pattern 10. The second metal pin (metal pin 34 or metal pin 37) includes a second body (body 64 or body 67) and a second head (head 65 or head 68) provided at the fourth distal end of the second body relative to the first main surface 10a of the conductive circuit pattern 10. The first small diameter portion (small diameter portion 71) of the first hole accommodates the first body. The first large diameter portion (large diameter portion 72) of the first hole accommodates the first head. The second small diameter portion (small diameter portion 74 or small diameter portion 77) of the second hole accommodates the second body. The second large diameter portion (large diameter portion 75 or large diameter portion 78) of the second hole accommodates the second head.

[0137] Therefore, the first interval between the conductive circuit pattern 10 and the first metal pin (metal pin 31), and the second interval between the power semiconductor element 15 and the second metal pin (metal pin 34 or metal pin 37) can be appropriately determined. The reliability of the electrical connection between the conductive circuit pattern 10 and the first metal pin, and the reliability of the electrical connection between the power semiconductor element 15 and the second metal pin can be improved. The reliability of the power semiconductor devices 1f and 1g can be improved.

[0138] Implementation method 5.

[0139] This embodiment is an embodiment in which any one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g of the above-mentioned embodiments 1 to 4 is applied to a power conversion device. The present disclosure is not limited to a specific power conversion device, and the following is a description of a case in which any one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g of the present disclosure is applied to a three-phase inverter as embodiment 5.

[0140] Fig.17 The power conversion system shown includes a power supply 100, a power conversion device 200, and a load 300. The power supply 100 is a DC power supply, and supplies DC power to the power conversion device 200. The power supply 100 is not particularly limited, and for example, it can be composed of a DC system, a solar cell or a storage battery, or a rectifier circuit or an AC / DC converter connected to an AC system. The power supply 100 can also be composed of a DC / DC converter that converts DC power output from a DC system into other DC power.

[0141] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, converts the DC power supplied from the power source 100 into AC power, and supplies the AC power to the load 300. Fig.17 As shown, the power conversion device 200 includes: a main conversion circuit 201 that converts DC power into AC power and outputs the AC power; and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201 .

[0142] Load 300 is a three-phase motor driven by AC power supplied from power converter 200. Load 300 is not limited to a specific use, and is a motor mounted on various electrical devices, such as a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioners.

[0143] The following describes the details of the power conversion device 200. The main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). By switching the voltage supplied from the power supply 100 by the switching element, the main conversion circuit 201 converts the DC power supplied from the power supply 100 into AC power and supplies it to the load 300. There are various structures for the specific circuit structure of the main conversion circuit 201. The main conversion circuit 201 of this embodiment is a 2-level three-phase full-bridge circuit, which can be composed of 6 switching elements and 6 freewheeling diodes connected in anti-parallel with each switching element. At least one of the switching elements and freewheeling diodes of the main conversion circuit 201 is a switching element or a freewheeling diode of the power semiconductor device 202 corresponding to any one of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g of the above-mentioned embodiments 1 to 4. Six switching elements are connected in series every two switching elements to form upper and lower arms, and each upper and lower arm forms each phase (U phase, V phase, W phase) of the full bridge circuit. The output terminals of each upper and lower arm, i.e., the three output terminals of the main conversion circuit 201 are connected to the load 300.

[0144] In addition, the main conversion circuit 201 is provided with a driving circuit (not shown) for driving each switching element. The driving circuit may be built into the power semiconductor device 202 or may be provided outside the power semiconductor device 202. The driving circuit generates a driving signal for driving the switching element of the main conversion circuit 201, and supplies the driving signal to the control electrode of the switching element of the main conversion circuit 201. Specifically, according to the control signal from the control circuit 203, a driving signal for turning the switching element into a conducting state and a driving signal for turning the switching element into an off state are output to the control electrode of each switching element. When the switching element is maintained in a conducting state, the driving signal is a voltage signal (conduction signal) above the threshold voltage of the switching element, and when the switching element is maintained in an off state, the driving signal becomes a voltage signal (off signal) below the threshold voltage of the switching element.

[0145] The control circuit 203 controls the switch elements of the main conversion circuit 201 in such a manner that power is supplied to the load 300. Specifically, the time (on-time) that each switch element of the main conversion circuit 201 should be in the on state is calculated based on the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switch element according to the voltage to be output to the load 300. In addition, at each time point, a control instruction (control signal) is output to the drive circuit of the main conversion circuit 201 in such a manner that an on signal is output to the switch element that should be in the on state and an off signal is output to the switch element that should be in the off state. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switch element in accordance with the control signal.

[0146] In the power conversion device of the present embodiment, any of the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g of the first to fourth embodiments is applied as the power semiconductor device 202 constituting the main conversion circuit 201. In the power semiconductor devices 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g of the first to fourth embodiments, the first conductive pillar (conductive pillar 30) and the second conductive pillar (conductive pillar 33 or conductive pillar 36) can be formed higher, so that the distance between the power semiconductor element 15 included in the power semiconductor device 1, 1a, 1b, 1c, 1d, 1e, 1f, and 1g and the control circuit 203 can be increased. The reliability of the power conversion device can be improved.

[0147] In this embodiment, an example of applying the present disclosure to a 2-level three-phase inverter is described, but the present disclosure is not limited thereto and can be applied to various power conversion devices. In this embodiment, a 2-level power conversion device is used, but a 3-level power conversion device or a multi-level power conversion device can also be used. In the case where the power conversion device supplies power to a single-phase load, the present disclosure can also be applied to a single-phase inverter. In the case where the power conversion device supplies power to a DC load, etc., the present disclosure can be applied to a DC / DC converter or an AC / DC converter.

[0148] The power conversion device to which the present invention is applied is not limited to the case where the above-mentioned load is an electric motor. For example, it can be used as a power supply device for an electric discharge machine or a laser processing machine, or an induction heating cooker or a contactless power supply system, and can also be used as a power conditioner for a solar power generation system or a power storage system.

[0149] It should be understood that the embodiments 1 to 5 and their modifications disclosed this time are only illustrative and not restrictive in all points. As long as there is no contradiction, at least two of the embodiments 1 to 5 and their modifications disclosed this time may be combined. The scope of the present disclosure is not shown by the above description but by the claims, and is intended to include all changes within the meaning and scope equivalent to the claims.

[0150] Explanation of symbols

[0151] 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g: power semiconductor device; 2, 2a: power semiconductor module; 10: conductive circuit pattern; 10a: first main surface; 10b: main surface; 15: power semiconductor element; 16: back electrode; 17: first front surface electrode; 18: second front surface electrode; 20: sealing member; 20a: second main surface; 22, 23, 24: hole; 30, 33, 36: conductive column; 31, 34, 37: metal pin; 32, 35, 38: conductive bonding member; 32p, 32q, 32r, 35p, 35q, 35r, 38p, 38q, 38r: conductive bonding precursor; 40 : mold; 41: fixed mold; 42: movable mold; 43, 44, 45: mold pins; 50, 50a: printed wiring board; 51: insulating substrate; 51a: third main surface; 51b: fourth main surface; 52: wiring; 53: first wiring part; 54: second wiring part; 55: third wiring part; 61, 64, 67: body; 62, 65, 68: head; 63, 66, 69: foot; 71, 74, 77: small diameter part; 72, 75, 78: large diameter part; 100: power supply; 200: power conversion device; 201: main conversion circuit; 202: power semiconductor device; 203: control circuit; 300: load.

Claims

1. A power semiconductor device comprising: A conductive circuit pattern including a first main surface; A power semiconductor element is bonded to the first main surface; A sealing member for sealing the first main surface and the power semiconductor element; a first conductive column filled in a first hole formed in the sealing member and connected to the first main surface of the conductive circuit pattern; as well as a second conductive column filled in a second hole formed in the sealing member and connected to the power semiconductor element; The first conductive column includes a first metal pin and a first conductive bonding member. The second conductive column includes a second metal pin and a second conductive bonding member. The first conductive bonding member is filled between the first pin side surface of the first metal pin and the first side surface of the first hole, and bonds the first metal pin to the conductive circuit pattern. The second conductive bonding member is filled between a second pin side surface of the second metal pin and a second side surface of the second hole, and bonds the second metal pin to the power semiconductor element.

2. The power semiconductor device according to claim 1, wherein: The first metal pin and the second metal pin are formed of copper, aluminum, gold or silver.

3. The power semiconductor device according to claim 1, wherein: The first conductive bonding member and the second conductive bonding member are formed of solder or a sintered body of metal fine particles.

4. The power semiconductor device according to claim 1, wherein: A first cross section of the first metal pin along a first longitudinal direction of the first metal pin and a second cross section of the second metal pin along a second longitudinal direction of the second metal pin have a T-shape or an I-shape.

5. The power semiconductor device according to claim 1, wherein: A first cross-section of the first metal pin along a first longitudinal direction of the first metal pin and a second cross-section of the second metal pin along a second longitudinal direction of the second metal pin have a tapered shape that tapers as they approach the first main surface, or a sawtooth shape that tapers as they approach the first main surface.

6. The power semiconductor device according to any one of claims 1 to 5, wherein: A first diameter of a first proximal end of the first hole relative to the first main surface is smaller than a second diameter of a first distal end of the first hole relative to the first main surface, and the first hole positions the first metal pin in a normal direction of the first main surface. A third diameter of the second proximal end of the second hole relative to the first main surface is smaller than a fourth diameter of the second distal end of the second hole relative to the first main surface, and the second hole positions the second metal pin in the normal direction of the first main surface.

7. The power semiconductor device according to claim 6, wherein: The first hole and the second hole have a tapered shape that becomes thinner as they approach the first main surface.

8. The power semiconductor device according to claim 6, wherein: The first metal pin includes a first body and a first head, wherein the first head is disposed at a third distal end of the first body relative to the first main surface. The second metal pin includes a second body and a second head, wherein the second head is disposed at a fourth distal end of the second body relative to the first main surface. The first small diameter portion of the first hole accommodates the first body portion, The first large diameter portion of the first hole accommodates the first head portion. The second small diameter portion of the second hole accommodates the second body portion, The second large diameter portion of the second hole accommodates the second head portion.

9. The power semiconductor device according to any one of claims 1 to 5, wherein: The sealing member includes a second main surface that is away from the first main surface in a normal direction of the first main surface. A first end portion of the first conductive column and a second end portion of the second conductive column located farther from the first main surface protrude from the second main surface.

10. The power semiconductor device according to any one of claims 1 to 5, wherein: The sealing member includes a second main surface that is away from the first main surface in a normal direction of the first main surface. A first end portion of the first conductive column and a second end portion of the second conductive column located far from the first main surface are flush with the second main surface.

11. A method for manufacturing a power semiconductor device, comprising: bonding a power semiconductor element to a first main surface of the conductive circuit pattern; providing a sealing member that seals the first main surface and the power semiconductor element and has a first hole and a second hole; forming a first conductive column in the first hole; as well as forming a second conductive column in the second hole, Providing the sealing member comprises: placing the conductive circuit pattern joined with the power semiconductor element in a cavity of a mold provided with a first mold pin and a second mold pin; injecting a sealing resin material into the cavity; as well as hardening the sealing resin material to obtain the sealing member, The first mold pin is arranged corresponding to the first hole, and the second mold pin is arranged corresponding to the second hole. The first conductive column is filled into the first hole and connected to the first main surface of the conductive circuit pattern. The second conductive column is filled into the second hole and connected to the power semiconductor element. The first conductive column includes a first metal pin and a first conductive bonding member. The second conductive column includes a second metal pin and a second conductive bonding member. The first conductive bonding member is filled between the first pin side surface of the first metal pin and the first side surface of the first hole, and bonds the first metal pin to the conductive circuit pattern. The second conductive bonding member is filled between a second pin side surface of the second metal pin and a second side surface of the second hole, and bonds the second metal pin to the power semiconductor element.

12. The method for manufacturing a power semiconductor device according to claim 11, wherein: Forming the first conductive column in the first hole includes: placing a first conductive bonding precursor in a paste or powder form in the first hole; bringing the first metal pin into contact with the first conductive bonding precursor, and disposing the first conductive bonding precursor between the first metal pin and the conductive circuit pattern and between the first pin side surface of the first metal pin and the first side surface of the first hole; and heating and cooling the first conductive bonding precursor so that the first conductive bonding precursor becomes the first conductive bonding member, Forming the second conductive column in the second hole includes: placing a second conductive bonding precursor in a paste or powder form in the second hole; bringing the second metal pin into contact with the second conductive bonding precursor, and disposing the second conductive bonding precursor between the second metal pin and the power semiconductor element and between the second pin side surface of the second metal pin and the second side surface of the second hole; and The second conductive bonding precursor is heated and cooled to convert the second conductive bonding precursor into the second conductive bonding member.

13. The method for manufacturing a power semiconductor device according to claim 11, wherein: Forming the first conductive column in the first hole includes: Disposing a first conductive bonding precursor in the first hole; heating the first conductive bonding precursor to melt the first conductive bonding precursor; Dipping the first metal pin into the molten first conductive bonding precursor, disposing the molten first conductive bonding precursor between the first metal pin and the conductive circuit pattern and between the first pin side surface of the first metal pin and the first side surface of the first hole; and cooling the first conductive bonding precursor so that the first conductive bonding precursor becomes the first conductive bonding member, Forming the second conductive column in the second hole includes: disposing a second conductive bonding precursor in the second hole; heating the second conductive bonding precursor to melt the second conductive bonding precursor; Dipping the second metal pin into the molten second conductive bonding precursor, disposing the molten second conductive bonding precursor between the second metal pin and the power semiconductor element and between the second pin side surface of the second metal pin and the second side surface of the second hole; and The second conductive bonding precursor is cooled to transform the second conductive bonding precursor into the second conductive bonding member.

14. The method for manufacturing a power semiconductor device according to claim 11, wherein: Forming the first conductive column in the first hole includes: applying a first conductive bonding precursor onto the first metal pin; inserting the first metal pin to which the first conductive bonding precursor is applied into the first hole, and disposing the first conductive bonding precursor between the first metal pin and the conductive circuit pattern and between the first pin side surface of the first metal pin and the first side surface of the first hole; and heating and cooling the first conductive bonding precursor so that the first conductive bonding precursor becomes the first conductive bonding member, Forming the second conductive column in the second hole includes: applying a second conductive bonding precursor onto the second metal pin; inserting the second metal pin to which the second conductive bonding precursor is applied into the second hole, and disposing the second conductive bonding precursor between the second metal pin and the power semiconductor element and between the second pin side surface of the second metal pin and the second side surface of the second hole; and The second conductive bonding precursor is heated and cooled to convert the second conductive bonding precursor into the second conductive bonding member.

15. The method for manufacturing a power semiconductor device according to claim 12, wherein: The first conductive bonding precursor is heated by utilizing the heat generated in the first metal pin. The second conductive bonding precursor is heated by utilizing the heat generated in the second metal pin.

16. The method for manufacturing a power semiconductor device according to any one of claims 11 to 15, wherein: A first cross section of the first metal pin along a first longitudinal direction of the first metal pin and a second cross section of the second metal pin along a second longitudinal direction of the second metal pin have a T-shape or an I-shape.

17. The method for manufacturing a power semiconductor device according to any one of claims 11 to 15, wherein: A first cross-section of the first metal pin along a first longitudinal direction of the first metal pin and a second cross-section of the second metal pin along a second longitudinal direction of the second metal pin have a tapered shape that tapers as they approach the first main surface, or a sawtooth shape that tapers as they approach the first main surface.

18. The method for manufacturing a power semiconductor device according to any one of claims 11 to 15, wherein: A first diameter of a first end of the first hole located proximal to the first main surface is smaller than a second diameter of a second end of the first hole located distal from the first main surface, and the first hole positions the first metal pin in a normal direction of the first main surface. The third diameter of the third end of the second hole located proximal to the first main surface is smaller than the fourth diameter of the fourth end of the second hole located distal from the first main surface, and the second hole positions the second metal pin in the normal direction of the first main surface.

19. A power conversion device comprising: A main conversion circuit, comprising the power semiconductor device according to any one of claims 1 to 10, wherein the main conversion circuit converts input power and outputs the converted power; and The control circuit outputs a control signal for controlling the main conversion circuit to the main conversion circuit.

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