Substrate processing method and chamber cleaning method

Abstract

A substrate processing method is provided. The substrate processing method includes processing a substrate by delivering a process plasma to a processing volume of a chamber and cleaning an exhaust volume by supplying a cleaning medium to the exhaust volume of the chamber positioned below the processing volume.

Description

TECHNICAL FIELD

[0001] Embodiments of the inventive concept described herein relate to a substrate processing method and a chamber cleaning method. BACKGROUND

[0002] Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by a very high temperature, a strong electric field, or an RF electromagnetic field. A semiconductor device manufacturing process can include an etching process using plasma to remove a thin film or foreign matter formed on a substrate such as a wafer. The etching process is performed by ions and / or radicals of the plasma colliding with or reacting with the thin film on the substrate.

[0003] Various process gases are used in a process of processing a substrate using plasma. For this reason, various process byproducts including particles are generated in a chamber for processing a substrate. If the process byproducts are deposited in the chamber, the particles can be attached to a substrate W on which processing is performed in the chamber, and thus the substrate W can be contaminated. In addition, it is difficult to control the pressure inside the chamber because exhaust of the inside of the chamber cannot be performed. Therefore, it is important to maintain the internal environment of the chamber in a clean state.

[0004] Generally, a substrate processing apparatus is divided into a processing space for processing a substrate and an exhaust space positioned below the processing space and exhausting the atmosphere of the processing space. Process byproducts generated in the processing space for processing a substrate are introduced and deposited into the exhaust space. Since the exhaust space is positioned relatively far from a plasma source, it is difficult to remove the process byproducts deposited in the exhaust space using plasma. In addition, due to the structural limitation of the exhaust space, it is difficult to physically clean the particles deposited in the exhaust space.

[0005] If the process byproducts are continuously deposited in the exhaust space, the process byproducts float and are attached to the substrate, causing process defects. In addition, since the process byproducts are deposited on the exhaust space, smooth exhaust to the processing space cannot be performed. For this reason, since the pressure of the processing space cannot be maintained constant, efficient substrate processing cannot be performed. SUMMARY

[0006] Embodiments of the inventive concept provide a substrate processing method and a chamber cleaning method for cleaning an exhaust space of a chamber.

[0007] Embodiments of the inventive concept provide a substrate processing method and a chamber cleaning method for cleaning an exhaust space even during plasma processing of a substrate.

[0008] Embodiments of the inventive concept provide a substrate processing method and a chamber cleaning method for cleaning an entire area of a chamber including a processing space for processing a substrate and an exhaust space disposed below the processing space.

[0009] Technical objects of the inventive concept are not limited to the above-mentioned objects and other unmentioned technical objects will be apparent to those skilled in the art from the following description.

[0010] The inventive concept provides a substrate processing method. The substrate processing method includes processing a substrate by delivering a process plasma to a processing space of a chamber and cleaning an exhaust space by supplying a cleaning medium to an exhaust space of the chamber positioned below the processing space.

[0011] In embodiments, the processing space and the exhaust space are separated by an exhaust baffle having a through-hole fluidly connecting the processing space and the exhaust space.

[0012] In embodiments, the cleaning medium is a cleaning plasma generated from a cleaning gas.

[0013] In embodiments, the cleaning plasma is generated from a remote plasma source that excites the cleaning gas and generates the cleaning plasma.

[0014] In embodiments, the cleaning is performed by adding the cleaning plasma to the exhaust space from a supply port facing a side of a support unit supporting the substrate at the processing space.

[0015] In embodiments, at least a portion of a time of performing the cleaning overlaps with a time of performing the processing.

[0016] In embodiments, the cleaning is additionally performed for a set time after the processing is performed.

[0017] In embodiments, the cleaning is additionally performed for a set time before the processing is performed.

[0018] In embodiments, the cleaning medium is a neutral gas that has captured ions from a cleaning plasma generated by exciting a cleaning gas.

[0019] In embodiments, the cleaning gas includes at least one of CF4, NF3, N2, O2, F2, Ar, or a combination thereof.

[0020] The inventive concept provides a chamber cleaning method for cleaning a chamber having an internal space separated into a processing space for processing a substrate and an exhaust space by an exhaust baffle, the processing space and the exhaust space being in fluid communication through a through-hole formed at the exhaust baffle. The method includes cleaning the exhaust space by delivering a cleaning plasma to the exhaust space among the processing space and the exhaust space.

[0021] In embodiments, the cleaning of the exhaust space is performed while processing the substrate by delivering a process plasma to the processing space.

[0022] In embodiments, the cleaning of the exhaust space is performed after processing the substrate by delivering a process plasma to the processing space.

[0023] In embodiments, the method further includes cleaning the processing space among the processing space and the exhaust space by delivering a cleaning plasma to the processing space to clean the processing space and the exhaust space.

[0024] In embodiments, the processing space is cleaned after the substrate is taken out from the processing space.

[0025] The inventive concept provides a substrate processing method. The substrate processing method includes: placing a substrate into an internal space of a chamber, the internal space being separated into a processing space at which the substrate is processed by an exhaust baffle surrounding a support unit supporting the substrate at the internal space, and an exhaust space exhausting an atmosphere of the processing space, and the exhaust baffle having a through-hole fluidly connecting the processing space and the exhaust space; processing the substrate by delivering a process plasma to the substrate supported on the support unit; cleaning the exhaust space by delivering a cleaning plasma to the exhaust space to remove impurities attached to the exhaust space; and taking out the substrate from the internal space.

[0026] In embodiments, the cleaning of the exhaust space is performed together with processing the substrate.

[0027] In embodiments, the cleaning of the exhaust space is performed after completing processing the substrate.

[0028] In embodiments, the method further includes cleaning the processing space among the processing space and the exhaust space by delivering a cleaning plasma to the processing space to clean the processing space and the exhaust space, and wherein the cleaning of the exhaust space is performed together with the cleaning of the processing space.

[0029] In embodiments, the cleaning gas excited into the cleaning plasma includes at least one of CF4, NF3, N2, O2, F2, Ar, or a combination thereof.

[0030] According to embodiments of the inventive concept, an exhaust space of a chamber can be cleaned.

[0031] According to embodiments of the present inventive concept, the exhaust space can be cleaned even during plasma processing of the substrate.

[0032] According to embodiments of the present inventive concept, the entire area of a chamber including a processing space for processing a substrate and an exhaust space disposed below the processing space can be cleaned.

[0033] Effects of the present inventive concept are not limited to what has been described above and other advantages and effects that will become apparent to those skilled in the art from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0034] The above and other objects and features will become apparent from the following description of embodiments given with reference to the accompanying drawings, in which like reference numerals refer to like elements unless otherwise specified, and wherein:

[0035] Figure 1 A substrate processing apparatus according to embodiments of the present inventive concept is shown.

[0036] Figure 2 A substrate processing apparatus according to another embodiment of the present inventive concept is shown.

[0037] Figure 3 An enlarged view of part C of Figure 2 is schematically shown.

[0038] Figures 4 to 6 A substrate processing apparatus according to another embodiment of the present inventive concept is shown.

[0039] Figure 7 is a flowchart of a substrate processing method according to embodiments of the present inventive concept.

[0040] Figure 8 A substrate processing apparatus performing the substrate processing step and the exhaust space cleaning step of Figure 7 is shown.

[0041] Figure 9 is a flowchart of a substrate processing method according to another embodiment of the present inventive concept.

[0042] Figure 10 A substrate processing apparatus performing the substrate processing step of Figure 9 is shown.

[0043] Figure 11 A substrate processing apparatus performing the exhaust space cleaning step of Figure 9 is shown.

[0044] Figure 12 A substrate processing apparatus performing the exhaust space cleaning step of Figure 9a substrate processing apparatus of a substrate unloading step.

[0045] Figure 13 a substrate processing apparatus of a substrate unloading step is shown. Figure 9 a substrate processing apparatus of a substrate unloading step is shown.

[0046] Figure 14 and Figure 15 a substrate processing apparatus according to another embodiment of the inventive concept is shown. DETAILED DESCRIPTION

[0047] The inventive concept can be variously modified and can have various forms, and specific embodiments of the inventive concept will be illustrated in the drawings and described in detail in the detailed description. However, the embodiments according to the inventive concept are not intended to limit the forms disclosed specifically, and it should be understood that the inventive concept includes all modifications, equivalents, and alternatives included in the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies can be omitted when it is determined that such detailed descriptions can unnecessarily obscure the essence of the inventive concept.

[0048] The terms used herein are only for the purpose of describing particular embodiments and are not intended to limit the inventive concept. As used herein, the term "a" is intended to include "one or more" unless the context clearly indicates otherwise. It will be further understood that the terms "comprise" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. In addition, the term "exemplary" is intended to mean an example or illustration.

[0049] It should be understood that although the terms "first," "second," "third," etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Therefore, a first element, a first component, a first region, a first layer or a first section discussed below can be termed a second element, a second component, a second region, a second layer or a second section without departing from the teachings of the inventive concept.

[0050] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0051] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. Figures 1 to 12Embodiments of the inventive concept are described in detail.

[0052] Figure 1 A substrate processing apparatus according to embodiments of the inventive concept is illustrated. Referring to Figure 1 The substrate processing apparatus 10 according to embodiments of the inventive concept can perform a process on a substrate W. The substrate processing apparatus 10 can process the substrate W using plasma. For example, the substrate processing apparatus 10 can perform an etching process using plasma to remove a thin film on the substrate W, an ashing process to remove a photoresist film, a deposition process to form a thin film on the substrate W, or a dry cleaning process. However, the inventive concept is not limited thereto, and the plasma processing process performed by the substrate processing apparatus 10 can be variously modified as a known plasma processing process.

[0053] The substrate W put into the substrate processing apparatus 10 can be a substrate W on which a processing process has been partially performed. For example, the substrate W put into the substrate processing apparatus 10 can be a substrate W on which an etching process, a lithography process, or the like has been performed.

[0054] The substrate processing apparatus 10 can include a chamber 100, an exhaust baffle 200, a support unit 300, a plasma source 400, a showerhead 500, a gas supply unit 600, an exhaust unit 700, a cleaning unit 800, and a controller 900.

[0055] The chamber 100 can have internal spaces A1, A2, A3, and B. The internal spaces A1, A2, A3, and B of the chamber 100 can be divided into an upper processing space A and an exhaust space B disposed below the processing space A by the exhaust baffle 200 to be described later. The processing space A can be divided into a processing space A1 (an exemplary first space), a plasma space A2 (an exemplary second space), and a mixing space A3 (an exemplary third space). Since the actual substrate W is processed in the processing space A1, the processing space A1 can be considered as a processing space in a narrow sense. In addition, since the plasma space A2 and the mixing space A3 generate etchants used to process the substrate W, it can be considered as having a processing space in a broad sense.

[0056] The process space A1 can be a space defined by the exhaust baffle 200, the support unit 300, and a showerhead 500 which will be described later. The process space A1 can be provided as a space in which the substrate W is processed. The plasma space A2 can be defined as a space in which a top electrode 420 which will be described later and an ion blocker 440 which will be described later are combined with each other. The plasma space A2 can be provided as a space in which plasma is generated. The mixing space A3 can be defined as a space in which the ion blocker 440 and the showerhead 500 are combined with each other. The mixing space A3 can be provided as a space in which the plasma from which ions are removed and a second process gas G2 supplied by a second gas supply unit 640 which will be described later are mixed with each other to generate a reaction gas.

[0057] The chamber 100 can be provided in a cylindrical shape having an open top portion. The top electrode 420 which will be described later can be positioned on the open top portion of the chamber 100. The process space A1 of the chamber 100 can be generally maintained in a vacuum atmosphere when the substrate W is processed. The inner wall of the chamber 100 can be coated with a material capable of preventing plasma etching. In an embodiment, the inner wall of the chamber 100 can be coated with a dielectric film such as ceramic. The chamber 100 can be grounded.

[0058] An exhaust hole can be formed on a bottom surface of the chamber 100. An exhaust unit 700 can be connected to the exhaust hole. An inlet (not shown) through which the substrate W is put in or taken out can be formed at a side of the chamber 100. The inlet can be selectively opened and closed by a door (not shown).

[0059] The exhaust baffle 200 can have a substantially ring shape when viewed from above. At least one through-hole can be formed in the exhaust baffle 200. In an embodiment, a plurality of through-holes can be formed in the exhaust baffle 200 in a vertical direction. The through-holes formed in the exhaust baffle 200 can put the process space A1 and the exhaust space B in fluid communication with each other. The exhaust baffle 200 can be configured to surround the support unit 300 which will be described later. For example, the exhaust baffle 200 can be configured to surround the support unit 300 when viewed from above. The exhaust baffle 200 can extend from a periphery of the support unit 300 to a sidewall of the chamber 100.

[0060] The exhaust baffle 200 can divide the inner spaces A1, A2, A3, and B of the chamber 100 into a process space A1 and an exhaust space B. The process space A1 can be defined as a region above the exhaust baffle 200. The process space A1 can be provided as a space in which a substrate is processed. The exhaust space B can be defined as a region below the exhaust baffle 200. The exhaust space B can be provided as a space for exhausting gas, process by-products, etc. supplied to the process space A1 to the outside of the chamber 100. In an embodiment, process by-products, etc. generated in the process space A1 can pass through the through-holes of the exhaust baffle 200 and be transported to the exhaust unit 700. The process by-products transported to the exhaust unit 700 can be exhausted to the outside of the chamber 100.

[0061] The support unit 300 can be configured to support the substrate W in the inner spaces A1, A2, A3, and B of the chamber 100. For example, the support unit 300 can be configured to support the substrate W in the process space A1. The support unit 300 can be provided spaced upward from a bottom surface of the chamber 100. The support unit 300 supports the substrate W.

[0062] The support unit 300 can include an electrostatic chuck that attracts the substrate W using an electrostatic force. Alternatively, the support unit 300 can support the substrate W in various ways such as a vacuum suction method or a mechanical clamping method. Hereinafter, the support unit 300 including the electrostatic chuck will be described.

[0063] The support unit 300 can include a dielectric plate 320, support plates 342, 344, a bottom body 360, and a ring member R. The dielectric plate 320 is positioned on a top end of the support unit 300. The dielectric plate 320 can be provided as a dielectric substrate having a disc shape. In an embodiment, the dielectric plate 320 can be made of a ceramic material. The dielectric plate 320 can have a support surface for supporting the substrate W. The substrate W is placed on a top surface of the dielectric plate 320. The top surface of the dielectric plate 320 can have a smaller radius than that of the substrate W. If the substrate W is placed on the top surface of the dielectric plate 320, an edge region of the substrate W can be positioned outside the dielectric plate 320. An electrode 322 and a heater 324 can be embedded in the dielectric plate 320. The electrode 322 can be positioned above the heater 324.

[0064] The electrode 322 can be disposed at a position overlapping the substrate W when viewed from above. The electrode 322 is electrically connected to a first power source 322a. The first power source 322a can include DC power. A first switch 322b is installed between the electrode 322 and the first power source 322a. The electrode 322 can be electrically connected to the first power source 322a by turning on / off the first switch 322b. If the first switch 322b is turned on, a DC current is applied to the electrode 322. If a current is applied to the electrode 322, the electrode 322 can form an electric field by an electrostatic force capable of clamping the substrate W. The electric field can transmit a force such that the substrate W is clamped in a direction toward the dielectric plate 320. Accordingly, the substrate W is attracted to the dielectric plate 320. In addition, the electric field can allow ions to flow directly to the substrate W, which will be described later. That is, the electric field can allow the ions to have anisotropy.

[0065] The heater 324 is electrically connected to a second power source 324a. A second switch 324b can be installed between the heater 324 and the second power source 324a. The heater 324 can be electrically connected to the second power source 324a by turning on / off the second switch 324b. The heater 324 generates heat by resisting a current applied from the second power source 324a. The generated heat is transmitted to the substrate W through the dielectric plate 320. The substrate W can be maintained at a predetermined temperature by the heat generated by the heater 324. The heater 324 can include a coil having a spiral shape. A plurality of heaters 324 are disposed. The heaters 324 can be disposed in different regions of the dielectric plate 320. For example, a heater 324 for heating a central region of the dielectric plate 320 and a heater 324 for heating an edge region of the dielectric plate 320 can be disposed, and these heaters 324 can independently control the degree of heat generation. The heater 324 can be a heating element such as tungsten. However, the type of the heater 324 is not limited thereto and can be variously modified as a known heater 324.

[0066] In the above-described example, it has been described that the heater 324 is disposed in the dielectric plate 320, but the inventive concept is not limited thereto. The heater 324 can not be disposed in the dielectric plate 320.

[0067] The support plates 342, 344 are positioned below the dielectric plate 320. The support plates 342, 344 can be disposed in a disc shape when viewed from above. The support plates 342, 344 can be provided with an area corresponding to an area of the dielectric plate 320. The support plates 342, 344 can be made of an insulating material. The support plates 342, 344 can electrically insulate the dielectric plate 320 from a bottom body 360, which will be described later.

[0068] In the above-described example, the support plates 342, 344 are formed of an insulating material, but are not limited thereto. The support plates 342, 344 can include an electrode plate 342 and an insulating plate 344.

[0069] The electrode plate 342 can be positioned below the dielectric plate 320. The electrode plate 342 can be provided in a disc shape. The electrode plate 342 can be made of a conductive material. In an embodiment, the electrode plate 342 can be made of an aluminum material. A top central area of the electrode plate 342 can have an area corresponding to a surface of the dielectric plate 320. The electrode plate 342 can include a metal plate. According to an embodiment, the entire area of the electrode plate 342 can be provided as a metal plate. In an embodiment, high-frequency power can be applied to the electrode plate 342. A cooling flow path (not shown) can be provided in the electrode plate 342.

[0070] The insulating plate 344 can be positioned below the electrode plate 342. When viewed from above, the insulating plate 344 can be provided in a disc shape. The insulating plate 344 can be provided with an area corresponding to an area of the electrode plate 342. The insulating plate 344 can be made of an insulating material. The insulating plate 344 can electrically insulate the electrode plate 342 from a bottom body 360, which will be described later.

[0071] The bottom body 360 is provided below the support plates 342, 344. When viewed from above, the bottom body 360 can have a cylindrical shape with an open top. A lift / lower member (not shown) for lifting / lowering the substrate W and / or the ring member R, which will be described later, can be positioned in an inner space of the bottom body 360.

[0072] The bottom body 360 has a connection member 362. The connection member 362 connects an outer surface of the bottom body 360 with an inner wall of the chamber 100. A plurality of connection members 362 can be provided on the outer surface of the bottom body 360 at regular intervals. The connection member 362 supports the support unit 300 inside the chamber 100. In addition, the connection member 362 is connected to the inner wall of the chamber 100 so that the bottom body 360 is electrically grounded. A first power line 322c connected to the first power supply 322a, a second power line 324c connected to the second power supply 324a, and the like extend to the outside of the chamber 100 through an inner space of the connection member 362.

[0073] The plasma source 400 excites a gas in the chamber 100 into a plasma state. The plasma source 400 can excite a process gas in the chamber 100 into a plasma state. In an embodiment, the plasma source 400 can excite a first process gas G1 in the chamber 100, which will be described later, into a plasma state. The plasma source 400 can include a top electrode 420 and an ion blocker 440.

[0074] The top electrode 420 can have a plate shape. The top electrode 420 can be positioned at an open top end of the chamber 100. The top electrode 420 can be positioned above an ion blocker 440 which will be described later. The top electrode 420 can be disposed to face the ion blocker 440. The top electrode 420 can generate plasma. In an embodiment, the top electrode 420 can generate process plasma.

[0075] Power can be applied to the top electrode 420 through the top power supply modules 424 and 426 of the substrate processing apparatus 10. The top power supply modules 424 and 426 can include a top power supply 424 and a top power supply switch 426. The top power supply 424 can be provided as a high frequency RF power supply. The high frequency RF power supply can be provided as a high bias power RF power supply. Power can be applied to the top electrode 420 according to on / off of the top power supply switch 426. If power is applied to the top electrode 420, an electric field is formed between the ion blocker 440 and the top electrode 420 which will be described later, serving as a counter electrode.

[0076] The top electrode 420 can generate process plasma by exciting the first process gas G1 which will be described later at a plasma space A2 defined as a combined space. An insulating member DR provided as an insulating material can be disposed between the top electrode 420 and the ion blocker 440. The insulating member DR can have a ring shape when viewed from above.

[0077] The ion blocker 440 can collect ions from plasma generated in the plasma space A2. The ion blocker 440 can be disposed in a path in which plasma generated in the plasma space A2 is transferred to the process space A1 to collect ions of the plasma generated in the plasma space A2. Accordingly, if the plasma generated in the plasma space A2 passes through the mixing space A3 to reach the process space A1, the plasma from which ions have been substantially removed (i.e., neutral gas (radicals)) can be transferred to the mixing space A3 and the process space A1.

[0078] The ion blocker 440 can be disposed below the top electrode 420. The ion blocker 440 can be positioned above the support unit 300. The ion blocker 440 can be positioned above a showerhead 500 which will be described later. In an embodiment, the ion blocker 440 can be positioned between the support unit 300 and the top electrode 420. In an embodiment, the ion blocker 440 can be positioned between the top electrode 420 and the showerhead 500. The ion blocker 440 can be positioned to face the top electrode 420. The ion blocker 440 and the showerhead 500 which will be described later can be combined with each other to define the mixing space A3.

[0079] In addition, the ion blocker 440 can be grounded to serve as an electrode facing each other with the top electrode 420. A plurality of through-holes 442 can be formed at the ion blocker 440. The through-holes 442 can be formed to vertically penetrate the ion blocker 440. The through-holes 442 can fluidly communicate the plasma space and the mixing space.

[0080] The showerhead 500 can be disposed at the inner spaces A1, A2, A3, and B of the chamber 100. The showerhead 500 can be positioned below the ion blocker 440. The showerhead 500 can be positioned above the support unit 300. In an embodiment, the showerhead 500 can be positioned between the support unit 300 and the ion blocker 440. The showerhead 500 can be disposed to face the ion blocker 440.

[0081] The showerhead 500 can be grounded. A plurality of holes 502 can be formed at the showerhead 500. The holes 502 can be formed to vertically extend from a top surface to a bottom surface of the showerhead 500. The holes 502 can fluidly communicate the fluids flowing in the processing space A1 and the plasma space A2.

[0082] A heating member H can be disposed on a top portion of the showerhead 500. The heating member H can be a ring heater having a ring shape when viewed from above. The heating member H can generate heat to increase a temperature of the mixing space A3 to more effectively generate a reaction gas by reacting a process plasma from which ions are removed with a second process gas G2 to be described later.

[0083] A gas supply unit 600 can supply process gases and a cleaning gas into the chamber 100. In an embodiment, the gas supply unit 600 can supply a first process gas G1, a second process gas G2, and a cleaning gas into the chamber 100. The gas supply unit 600 can include a first gas supply unit 620, a second gas supply unit 640, and a third gas supply unit 660.

[0084] The first gas supply unit 620 can supply the first process gas G1 into the chamber 100. The first gas supply unit 620 can supply the first process gas G1 to the plasma space A2. In an embodiment, the first gas supply unit 620 can supply the first process gas G1 to a space between the top electrode 420 and the ion blocker 440. The first gas supply unit 620 can directly inject the first process gas G1 into the plasma space A2, and indirectly supply the first process gas G1 into the mixing space A3 and the processing space A1.

[0085] The first gas supply unit 620 can include a first gas supply source 622 and a first gas passage 624. One end of the first gas passage 624 can be connected to the first gas supply source 622, and the other end thereof can communicate with the plasma space A2. The first process gas G1 can be a fluorine-containing gas including fluorine. For example, the first process gas G1 can be NF3. Alternatively, the first process gas G1 can further include one or more of He, Ar, Xe, or N2.

[0086] The second gas supply unit 640 can supply a second process gas G2 into the chamber 100. The second gas supply unit 640 can supply the second process gas G2 to the mixing space A3. The second gas supply unit 640 can supply the second process gas G2 to a space between the ion blocker 440 and the showerhead 500. In an embodiment, the second gas supply unit 640 can be mounted on a sidewall disposed between the ion blocker 440 and the showerhead 500 of the chamber 100. The second gas supply unit 640 can inject the second process gas G2 directly into the mixing space A3 to indirectly supply the second process gas G2 to the processing space A1 processing the substrate W. The second gas supply unit 640 can include a second gas supply source 642 and a second gas passage 644. One end of the second gas passage 644 can be connected to the second gas supply source 642, and the other end thereof can communicate with the mixing space A3. The second process gas G2 can be a gas including hydrogen. For example, the second process gas G2 can be NH3.

[0087] In the foregoing embodiment, it has been described that the first gas supply unit 620 and the second gas supply unit 640 are separately disposed, but the inventive concept is not limited thereto. The first gas supply unit 620 and the second gas supply unit 640 can have passages branched from a single gas supply unit to the plasma space A2 and the mixing space A3, and can inject the first process gas G1 into the plasma space A2 and the second process gas G2 into the mixing space A3.

[0088] The third gas supply unit 660 can supply a cleaning gas to a cleaning unit 800 which will be described later. In an embodiment, the third gas supply unit 660 can supply a first cleaning gas G3 to a remote plasma source 810 which will be described later. The third gas supply unit 660 can include a third gas supply source 662 and a third gas passage 664. One end of the third gas passage 664 can be connected to the third gas supply source 662, and the other end thereof can be connected to the remote plasma source 810. The first cleaning gas G3 supplied by the third gas supply unit 660 can include at least one of O2, N2, F2, Ar, CF4, NF3, or a combination thereof.

[0089] The exhaust unit 700 can exhaust the first process gas G1, the second process gas G2, and the process byproducts supplied to the process space A1. In an embodiment, if the gas and the process byproducts from the process space A1 are introduced into the exhaust space B through the exhaust baffle 200, the exhaust unit 700 can exhaust the gas to the outside of the chamber 100. The exhaust unit 700 can adjust the pressure of the process space A1. The exhaust unit 700 can include a pressure reduction member such as an exhaust line and a pump. One end of the exhaust line can be connected to the exhaust hole of the chamber, and the other end thereof can be connected to the pressure reduction member.

[0090] The cleaning unit 800 can clean the inside of the chamber 100. The cleaning unit 800 can supply a cleaning medium CM to the exhaust space B. The cleaning medium CM can be a first cleaning plasma generated by exciting a first cleaning gas supplied from the third gas supply unit 660. The cleaning unit 800 can clean the exhaust space B. The cleaning unit 800 can clean the process byproducts introduced from the process space A1 to the exhaust space B through the exhaust baffle 200. The cleaning unit 800 can include a remote plasma source 810, a supply port 830, and a remote passage 850.

[0091] The remote plasma source 810 can generate a first cleaning plasma from the first cleaning gas supplied from the third gas supply unit 660. The remote plasma source 810 can be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), or a microwave plasma.

[0092] The supply port 830 can be installed on the inner wall of the chamber 100. The supply port 830 can be installed to face the side of the support unit 300. The supply port 830 can be positioned in the exhaust space B. The supply port 830 can be positioned below the exhaust baffle 200. The supply port 830 can be connected to the remote passage 850. One end of the remote passage 850 can be connected to the supply port 830, and the other end thereof can be connected to the remote plasma source 810. A diffusion unit (not shown) can be provided at the supply port 830. The diffusion unit (not shown) can disperse the first cleaning plasma so that the first cleaning plasma can be diffused into the exhaust space B. The diffusion unit (not shown) can be provided as a diffuser that exhausts by a jet method.

[0093] The supply port 830 can supply the first cleaning plasma to the exhaust space B. The supply port 830 can be positioned to directly supply the first cleaning plasma to the exhaust space B. The first cleaning plasma generated from the remote plasma source 810 can clean process by-products, etc. present inside the exhaust space B through the supply port 830. Accordingly, in addition to the processing space Al in which the substrate W is processed, by cleaning the process by-products that can be deposited in the exhaust space B, contamination of the bottom region of the chamber 100 can be minimized. In addition, if the process by-products are deposited in the exhaust space B, the gas flow in the processing space Al by the exhaust unit 700 can vary. According to an embodiment of the present application, the cleaning unit 800 cleans the exhaust space B, thereby minimizing the gas flow variation in the processing space Al.

[0094] The controller 900 can control the plasma source 400, the gas supply unit 600, and the remote plasma source 810. The controller can include a process controller composed of a microprocessor (computer) that performs control of the substrate processing apparatus, a user interface such as a keyboard via which an operator inputs a command to manage the substrate processing apparatus, and a display that shows the operating conditions of the substrate processing apparatus, and a memory unit that stores a processing recipe (i.e., a control program that performs a processing process of the substrate processing apparatus by controlling the process controller or a program that performs components of the substrate processing apparatus according to data and processing conditions). In addition, the user interface and the memory unit can be connected to the process controller. The processing recipe can be stored in a storage medium of the memory unit, and the storage medium can be a hard disk, a portable disk such as a CD-ROM or a DVD, or a semiconductor memory such as a flash memory.

[0095] If the substrate W is put into the chamber 100 and seated in the support unit 300, the controller 900 can control the first gas supply unit 620 to supply the first process gas G1 to the plasma space A2. In addition, the second gas supply unit 640 can be controlled to supply the second process gas G2 to the mixing space A3. In addition, the top switch 426 can be controlled such that the top switch 426 is turned on, thereby applying high-frequency power to the top electrode 420.

[0096] Accordingly, the first process gas G1 is excited by the top electrode 420 and the ion blocker 440, and a process plasma is generated in the plasma space A2. The process plasma generated in the plasma space A2 flows toward the mixing space A3 through the ion blocker 440. In this process, the process plasma flows into the mixing space A3 in a state where ions and / or electrons are removed by the through-hole 442 formed in the grounded ion blocker 440. That is, radicals can flow in the mixing space A3. The radicals present in the mixing space A3 and the second process gas G2 supplied to the mixing space A3 can be mixed and reacted. A reaction gas (etchant) generated by the reaction of the second process gas G2 and the radicals flows into the processing space Al through the showerhead 500 and acts on the substrate W. For example, the reaction gas can include NH4F or HF. The reaction gas reacts with a thin film on the substrate W, thereby forming a reaction byproduct on the substrate. The thin film can be a material including silicon. The thin film can be silicon oxide or silicon nitride. For example, the thin film can be SiO2 or Si3N4. The reaction byproduct can be (NH4)2SiF6. During the processing of the substrate, the substrate is heated by the heater 324, and thus the reaction byproduct can be removed from the substrate W.

[0097] When the substrate W is processed with the process plasma, the controller 900 can control the third gas supply unit 660 to supply the first cleaning gas to the remote plasma source 810. The controller 900 can control the remote plasma source 810 to excite the first cleaning gas from the remote plasma source 810. A first cleaning plasma generated by the first cleaning gas supplied to the remote plasma source 810 can be supplied to the exhaust space B through the supply port 830. Accordingly, the exhaust space B can be cleaned by the first cleaning plasma. Process byproducts and the like deposited in the exhaust space B can be cleaned by the first cleaning plasma.

[0098] According to the above-described embodiments of the present inventive concept, even during the plasma processing of the substrate W on the processing space Al, cleaning can be performed on the exhaust space B positioned below the processing space Al. Process byproducts deposited in the exhaust space B can be controlled. Accordingly, by maintaining the inside of the exhaust space B in a clean state, not only a smooth gas flow toward the exhaust space B can be induced, but also a smooth gas flow toward the processing space Al, the plasma space A2, and the mixing space A3 can be induced. Since the exhaust of each space is performed smoothly, the pressure inside the processing space Al processing the substrate W can be easily controlled. For this reason, if a plasma processing process is performed on the substrate W, the process rate of the substrate W can be maintained constant.

[0099] Figure 2 A substrate processing apparatus according to another embodiment of the present inventive concept is illustrated.Figure 3 An enlarged view of part C of Figure 2 Figure 2 and Figure 3 A substrate processing apparatus according to another embodiment of the present inventive concept will be described below. The embodiment of the present inventive concept described below is mostly similar to the above-described embodiment except for the exhaust port. Therefore, the description of the configuration of the similar arrangement will be omitted in order to prevent overlapping of the contents.

[0100] The supply ports 830 can be installed on the inner wall of the chamber 100. The supply ports 830 can be positioned in the exhaust space B. The supply ports 830 can be positioned below the exhaust baffle 200. In an embodiment, the supply ports 830 can be positioned between the exhaust baffle 200 and the exhaust hole 110. A plurality of supply ports 830 can be provided. The supply ports 830 can be provided to be spaced apart from each other along the circumference of the inner wall of the chamber 100. Each of the plurality of supply ports 830 can supply the first cleaning plasma to a different region in the exhaust space B.

[0101] The supply ports 830 can each be connected to a remote passage 850. The remote passage 850 can include a main passage (not shown) and branch passages (not shown). One end of the main passage can be connected to the remote plasma source 810. The other end of the main passage can branch into the branch passages. A plurality of branch passages can be provided. One end of the branch passages can be connected to the main passage. The other end of the branch passages can be connected to the supply ports 830, respectively. A diffusion unit (not shown) can be provided to the supply ports 830. The diffusion unit (not shown) can disperse the first cleaning plasma so that the first cleaning plasma can be diffused into the exhaust space B. The diffusion unit (not shown) can be provided as a diffuser that discharges by a jet method.

[0102] The supply ports 830 can supply the first cleaning plasma to the exhaust space B. The supply ports 830 can be positioned to directly supply the first cleaning plasma to the exhaust space B. Each of the supply ports 830 can supply the first cleaning plasma to a different region in the exhaust space B. The first cleaning plasma generated from the remote plasma source 810 can clean the process by-products, etc. present inside the exhaust space B through the supply ports 830. Accordingly, in addition to the processing space A1 in which the substrate W is processed, by cleaning the process by-products that can be deposited in the exhaust space B, contamination of the bottom region of the chamber 100 can be minimized.

[0103] ​Unlike the above-described embodiments, an on / off valve (not shown) can be provided to the branch passage. The valve (not shown) provided to the branch passage can be controlled by the controller 900. Accordingly, by providing the first cleaning plasma to the plurality of supply ports 830 on different regions of the exhaust space B, the first cleaning plasma can be selectively supplied to a highly contaminated region according to the severity of contamination inside the exhaust space B.

[0104] Figures 4 to 6 A substrate processing apparatus according to another embodiment of the inventive concept is illustrated. The description of the substrate processing apparatus according to another embodiment described below is similar to the description of the substrate processing apparatus in Figure 1 and Figure 2 , and the description of the overlapping configuration is omitted below.

[0105] Referring to Figure 4 , the cleaning unit 800 can clean the inside of the chamber 100. The cleaning unit 800 can clean the exhaust space B. The cleaning unit 800 can clean the process byproducts introduced from the processing space A1 to the exhaust space B by the exhaust baffle 200. The cleaning unit 800 can include a remote plasma source 810, a supply port 830, and an ion trap 870.

[0106] The remote plasma source 810 can generate the first cleaning plasma from the first cleaning gas G3 supplied from the third gas supply unit 660. The remote plasma source 810 can be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), or a microwave plasma.

[0107] The supply port 830 can be installed on the inner wall of the chamber 100. The supply port 830 can be positioned in the exhaust space B. The supply port 830 can be positioned below the exhaust baffle 200. In an embodiment, the supply port 830 can be positioned between the exhaust baffle 200 and the exhaust hole 110. The supply port 830 can be connected to the remote passage 850. One end of the remote passage 850 can be connected to the supply port 830, and the other end thereof can be connected to the remote plasma source 810. A diffusion unit (not shown) can be provided at the supply port 830. The diffusion unit (not shown) can disperse the first cleaning plasma so that the first cleaning plasma can be diffused into the exhaust space B. The diffusion unit (not shown) can be provided as a diffuser that discharges by a jet method.

[0108] The ion trap 870 can be positioned between the supply port 830 and the remote plasma source 810. The ion trap 870 can be disposed inside the remote passage 850. The ion trap 870 can be disposed in a plate shape. A longitudinal direction of the ion trap 870 can be disposed in the remote passage 850 in a direction perpendicular to a longitudinal direction of the remote passage 850. The ion trap 870 can be provided with a plurality of through-holes. The through-holes can penetrate the ion trap 870 in the up / down direction. The ion trap 870 can trap ions contained in the first cleaning plasma generated from the remote plasma source 810. The first cleaning plasma from which the ions are removed by the ion trap 870 (i.e., neutral gas (radicals)) can be supplied to the exhaust space B through the supply port 830. Accordingly, the radicals can be supplied to the exhaust space B. Among the first cleaning plasma generated from the remote plasma source 810, the ions can be removed by the ion trap 870, and the process byproducts present in the exhaust space B can be cleaned with the radicals through the supply port 830. Accordingly, in addition to the processing space A1 in which the substrate W is processed, the process byproducts that can be deposited in the exhaust space B are more effectively cleaned, thereby minimizing contamination of the bottom region of the chamber 100.

[0109] Reference Figure 5 The second gas supply unit 640 can supply the second process gas G2 into the chamber 100. The second gas supply unit 640 can supply the second process gas G2 to the mixing space A3. The second gas supply unit 640 can supply the second process gas G2 to a space between the ion blocker 440 and the showerhead 500. The second gas supply unit 640 can include a second gas supply source 642, a main gas line 646, a first branch line 647, and a second branch line 648.

[0110] One end of the main gas line 646 can be connected to the second gas supply source 642. The other end of the main gas line 646 can be branched into the first branch line 647 and the second branch line 648. The first branch line 647 can be connected to the gas supply port 444, which will be described later. The second branch line 648 can be connected to the gas inlet 504, which will be described later.

[0111] The gas supply port 444 can be formed at the ion blocker 440. The gas supply port 444 can be disposed in the central region of the ion blocker 440. The gas supply port 444 can be mounted at the bottom end of the ion blocker 440. The gas supply port 444 can be mounted at the bottom end of the ion blocker 440 to supply the second process gas G2 toward the mixing space A3. Accordingly, the gas supply port 444 can supply the second process gas G2 to the mixing space A3.

[0112] The gas inlet 504 can be formed at the showerhead 500. The gas inlet 504 can be disposed in an edge region of the showerhead 500. In an embodiment, the gas inlet 504 can be mounted on a top end of the showerhead 500. The gas inlet 504 can be mounted at the top end of the showerhead 500 to supply the second process gas G2 toward the mixing space A3. Accordingly, the gas inlet 504 can supply the second process gas G2 to the mixing space A3. By discharging the second process gas G2 from the top and the bottom of the mixing space A3, respectively, radicals including electrons and / or ions included in the process plasma can effectively react with the second process gas G2.

[0113] In the above-described embodiment, it has been described that the gas supply port 444 is disposed at the center region of the ion blocker 440, but is not limited thereto. The gas supply port 444 can be formed in the entire region of the ion blocker 440. In addition, the gas supply port 444 can be formed at an edge region of the ion blocker 440.

[0114] In addition, in the above-described embodiment, the gas inlet 504 is disposed at the edge region of the showerhead 500 as an example, but is not limited thereto. The gas inlet 504 can be formed in the entire region of the showerhead 500. In addition, the gas inlet 504 can be formed at the center region of the showerhead 500.

[0115] In addition, unlike the above-described embodiment, only one of the gas supply port 444 and the gas inlet 504 that supply the second process gas G2 to the mixing space A3 can be disposed.

[0116] Referring to Figure 6 The gas supply unit 600 can supply process gases and cleaning gases into the chamber 100. In an embodiment, the gas supply unit 600 can supply the first process gas G1, the second process gas G2, the first cleaning gas, and the second cleaning gas G4 into the chamber 100. The gas supply unit 600 can include a first gas supply unit 620, a second gas supply unit 640, a third gas supply unit 660, and a fourth gas supply unit 680.

[0117] The first gas supply unit 620 can supply the first process gas G1 into the chamber 100. The first gas supply unit 620 can supply the first process gas G1 to the plasma space A2. In an embodiment, the first gas supply unit 620 can supply the first process gas G1 to a space between the top electrode 420 and the ion blocker 440. The first gas supply unit 620 can inject the first process gas G1 into the plasma space A2 to supply the first process gas G1 into the mixing space A3 and the processing space A1. The first gas supply unit 620 can include a first gas supply source 622 and a first gas passage 624. One end of the first gas passage 624 can be connected to the first gas supply source 622, and the other end thereof can communicate with the plasma space A2.

[0118] The first process gas G1 can be a fluorine-containing gas. For example, the first process gas G1 can be NF3. Alternatively, the first process gas G1 can further include one or more of He, Ar, Xe, or N2.

[0119] The second gas supply unit 640 can supply the second process gas G2 into the chamber 100. The second gas supply unit 640 can supply the second process gas G2 to the mixing space A3. The second gas supply unit 640 can supply the second process gas G2 to a space between the ion blocker 440 and the showerhead 500. In an embodiment, the second gas supply unit 640 can be installed on a sidewall of the chamber 100 positioned between the ion blocker 440 and the showerhead 500. The second gas supply unit 640 can supply the second process gas G2 to the processing space A1 at which the substrate W is processed by injecting the second process gas G2. The second gas supply unit 640 can include a second gas supply source 642 and a second gas passage 644. One end of the second gas passage 644 can be connected to the second gas supply source 642, and the other end thereof can communicate with the mixing space A3. The second process gas G2 can be a gas containing hydrogen. For example, the second process gas G2 can be NH3.

[0120] In the foregoing embodiment, it has been described that the first gas supply unit 620 and the second gas supply unit 640 are separately provided, but the inventive concept is not limited thereto. The first gas supply unit 620 and the second gas supply unit 640 can have passages branched from a single gas supply unit to the plasma space A2 and the mixing space A3, and can inject the first process gas G1 into the plasma space A2 and the second process gas G2 into the mixing space A3.

[0121] The third gas supply unit 660 can supply the first cleaning gas G3 to the cleaning unit 800. In an embodiment, the third gas supply unit 660 can supply the first cleaning gas G3 to the remote plasma source 840. The third gas supply unit 660 can include a third gas supply source 662 and a third gas passage 664. One end of the third gas passage 664 can be connected to the third gas supply source 662, and the other end thereof can be connected to the remote plasma source 840. The first cleaning gas G3 supplied by the third gas supply unit 660 can include at least one of O2, N2, F2, Ar, CF4, NF3, or a combination thereof.

[0122] The fourth gas supply unit 680 can supply the second cleaning gas G4 into the chamber 100. The fourth gas supply unit 680 can supply the second cleaning gas G4 to the plasma space A2. In an embodiment, the fourth gas supply unit 680 can supply the second cleaning gas G4 to a space between the top electrode 420 and the ion blocker 440. The fourth gas supply unit 680 can inject the second cleaning gas G4 into the plasma space A2 to supply the second cleaning gas G4 into the mixing space A3 and the process space A1. The fourth gas supply unit 680 can include a fourth gas supply source 682 and a fourth gas passage 684. One end of the fourth gas passage 684 can be connected to the fourth gas supply source 682, and the other end thereof can be in communication with the plasma space A2. The second cleaning gas G4 supplied by the fourth gas supply unit 680 can include at least one of O2, N2, F2, Cl2, Ar, CF4, NF3, or a combination thereof.

[0123] The controller 900 can control the plasma source 400, the gas supply unit 600, and the remote plasma source 810. If the substrate W is put into the chamber 100 and seated on the support unit 300, the controller 900 can control the first gas supply unit 620 to supply the first process gas G1 to the plasma space A2. Also, the second gas supply unit 640 can be controlled to supply the second process gas G2 to the mixing space A3. Also, the top switch 426 can be controlled so that the top switch 426 is turned on, so that the high-frequency power is applied to the top electrode 420. Accordingly, the first process gas G1 is excited by the top electrode 420 and the ion blocker 440, and a process plasma is generated in the plasma space A2. The process plasma can include ions, electrons, and radicals. The process plasma generated in the plasma space A2 flows toward the mixing space A3 through the ion blocker 440. In this process, the process plasma flows into the mixing space A3 in a state in which the ions and / or the electrons are removed by the through-hole 442 formed in the grounded ion blocker 440. That is, the radicals can flow in the mixing space A3. The radicals present in the mixing space A3 and the second process gas G2 supplied to the mixing space A3 can be mixed and reacted. A reaction gas generated by the reaction of the second process gas G2 and the radicals flows into the processing space A1 through the showerhead 500 and acts on the substrate W. For example, the reaction gas can include NH4F or HF. The reaction gas reacts with a thin film on the substrate W, thereby forming a reaction by-product on the substrate. The thin film can be a material including silicon. The thin film can be silicon oxide or silicon nitride. For example, the thin film can be SiO2 or Si3N4. The reaction by-product can be (NH4)2SiF6. During the processing of the substrate, the substrate is heated by the heater 324, and thus the reaction by-product can be removed from the substrate W.

[0124] When the substrate W is processed with the process plasma, the controller 900 can control the third gas supply unit 660 to supply the first cleaning gas G3 to the remote plasma source 810. The controller 900 can control the remote plasma source 810 to excite the first cleaning gas G3 from the remote plasma source 810. A first cleaning plasma generated by the first cleaning gas G3 supplied to the remote plasma source 810 can be supplied to the exhaust space B through the supply port 830. Accordingly, the exhaust space B can be cleaned by the first cleaning plasma. Process by-products, etc. deposited in the exhaust space B can be cleaned by the first cleaning plasma.

[0125] After completing the process of treating the substrate W using the plasma, the substrate W is taken out of the chamber 100. After taking out the substrate W from the chamber 100, the controller 900 can control the fourth gas supply unit 680 to supply the second cleaning gas G2 to the plasma space A2. The controller 900 can control the second gas supply unit 640 to supply the second process gas G2 to the mixing space A3. Alternatively, the controller 900 can control the second gas supply unit 640 to stop supplying the second process gas G2 to the mixing space A3. In addition, the top switch 426 can be controlled so that the top switch 426 is turned on, so that the high-frequency power is applied to the top electrode 420. Accordingly, the second cleaning plasma generated can be supplied to the processing space Al through the ion blocker 440 and the showerhead 500. The second cleaning plasma, from which ions are removed, is supplied to the processing space Al, and a cleaning process of the processing space Al can be performed.

[0126] In addition, even during the cleaning process of the processing space Al, the controller 900 can control the third gas supply unit 660 to supply the first cleaning gas G3 to the remote plasma source 810. The controller 900 can control the remote plasma source 810 to excite the first cleaning gas G3 from the remote plasma source 810. The first cleaning plasma generated by the first cleaning gas G3 supplied to the remote plasma source 810 can be supplied to the exhaust space B through the supply port 830. Accordingly, the exhaust space B can be cleaned by the first cleaning plasma. Process byproducts, etc. deposited in the exhaust space B can be cleaned by the first cleaning plasma.

[0127] According to the above-described embodiments of the present inventive concept, even during the plasma treatment of the substrate W in the processing space Al, cleaning can be performed on the exhaust space B positioned below the processing space Al. Process byproducts deposited in the exhaust space B can be controlled. Accordingly, by maintaining the inside of the exhaust space B in a clean state, not only can a smooth gas flow be induced to flow with respect to the exhaust space B, but also a smooth gas flow can be induced to flow with respect to the processing space Al, the plasma space A2, and the mixing space A3. Since the exhaust of each space is smoothly performed, the pressure inside the processing space Al in which the substrate W is treated can be easily controlled. For this reason, if a plasma treatment process is performed on the substrate W, the process rate of the substrate W can be maintained constant.

[0128] Further, a large amount of process byproducts, etc. can be deposited in the processing space Al, which can be generated by the process plasma. Accordingly, after completing the process of treating the substrate W using the plasma, and taking out the substrate W from the chamber 100, a cleaning process of the processing space Al, which is a space in which the substrate W is treated, can be performed. Accordingly, a cleaning process can be performed on each of the processing space Al and the exhaust space B.

[0129] In the above-described embodiments of the present inventive concept, the third gas supply unit 660 and the fourth gas supply unit 680 are respectively provided. However, the present inventive concept is not limited thereto, and the third gas passage 664 supplying the first cleaning gas G3 from the third gas supply unit 660 to the remote plasma source 810 can be branched to supply the first cleaning gas G3 to the plasma space A2. In addition, the first gas supply unit 620 can be configured to supply the first process gas G1 and the second cleaning gas G4.

[0130] Hereinafter, a substrate processing method according to the present inventive concept will be described. The substrate processing method of the present inventive concept can include a chamber cleaning method for cleaning the chamber 100.

[0131] Figure 7 is a flowchart of a substrate processing method according to an embodiment of the present inventive concept.

[0132] Reference Figure 7 The substrate processing method according to an embodiment of the present inventive concept can include a substrate loading step S10, a process step S20, and a substrate unloading step S30.

[0133] The substrate loading step S10 is a step of loading the substrate W into the chamber 100. The substrate W can be introduced into an entrance (not shown) formed at a side of the chamber 100 by a transfer robot (not shown). In an embodiment, if the entrance (not shown) is opened by a door (not shown), the transfer robot (not shown) returns the substrate W to the processing space A1 of the chamber 100. The transfer robot (not shown) places the substrate W on the support unit 300. The substrate W is seated on the dielectric plate 320. The first switch 322b is turned on to form an electric field by electrostatic force in the electrode 322, and the substrate W can be clamped to the dielectric plate 320.

[0134] The process step S20 can include a substrate processing step S21 and an exhaust space cleaning step S22. At least a portion of the time in which the substrate processing step S21 and the exhaust space cleaning step S22 are performed can overlap. That is, the substrate processing step S21 and the exhaust space cleaning step S22 can be performed together (see Figure 8 ).

[0135] The substrate processing step S21 is a step of performing processing of the substrate W using a process plasma P generated by a process gas supplied by the first gas supply unit 620 and / or the second gas supply unit 640. The process performed in the substrate processing step can include various processes of processing the substrate W using the plasma, such as an etching process of removing a thin film on the substrate W using the plasma P and an ashing process of removing a photoresist film.

[0136] In the substrate processing step S21, the first gas supply unit 620 supplies the first process gas G1 to the plasma space A2 defined as a plasma space. The first process gas G1 can be a fluorine-containing gas. For example, the first process gas G1 can be NF3. Alternatively, the first process gas G1 can further include one or more of He, Ar, Xe, or N2. In addition, high-frequency power is applied to the top electrode 420. Accordingly, the first process gas G1 is excited by the top electrode 420 and the ion blocker 440, and a process plasma is generated in the plasma space A2. The process plasma generated in the plasma space A2 flows toward the mixing space A3 through the ion blocker 440. In this process, the process plasma flows into the mixing space A3 in a state where ions and / or electrons are removed by the through-hole 442 formed in the grounded ion blocker 440. That is, radicals can flow in the mixing space A3.

[0137] The second gas supply unit 640 supplies the second process gas G2 to the mixing space A3. The second process gas G2 can be a gas containing hydrogen. For example, the second process gas G2 can be NH3.

[0138] The radicals present in the mixing space A3 and the second process gas G2 supplied to the mixing space A3 can mix and react. A reaction gas generated by the reaction of the second process gas G2 and the radicals flows into the processing space Al through the showerhead 500 and acts on the substrate W. For example, the reaction gas can include NH4F or HF. The reaction gas reacts with a thin film on the substrate W, thereby forming a reaction byproduct on the substrate. The thin film can be a material including silicon. The thin film can be silicon oxide or silicon nitride. For example, the thin film can be SiO2 or Si3N4. The reaction byproduct can be (NH4)2SiF6. During the processing of the substrate, the substrate is heated by the heater 324, and thus the reaction byproduct can be removed from the substrate W.

[0139] The exhaust space cleaning step S22 is a step of cleaning the exhaust space B by supplying a first cleaning plasma as a cleaning medium CM to the exhaust space B. The substrate processing step S21 and the exhaust space cleaning step S22 can be performed simultaneously. When the substrate W is processed by the process plasma in the processing space Al, the first cleaning plasma can be supplied to the exhaust space B to perform a cleaning process on the exhaust space B. In addition, the exhaust space cleaning step S22 can be performed simultaneously with the substrate loading step S10 and the substrate unloading step S30.

[0140] The third gas supply unit 660 supplies a first cleaning gas G3 to the remote plasma source 810. The first cleaning gas G3 can include at least one of O2, N2, F2, Ar, CF4, NF3, or a combination thereof. The remote plasma source 810 generates a first cleaning plasma by exciting the first cleaning gas G3. The first cleaning plasma is supplied to the supply port 830 positioned in the exhaust space B. The supply port 830 supplies the first cleaning plasma toward the exhaust space B to perform a cleaning process on the process byproducts deposited in the exhaust space B. Alternatively, the first cleaning plasma from which ions are removed by the ion trap 870 can be supplied to the exhaust space B. Accordingly, the process byproducts, etc. deposited in the exhaust space B can be removed by radicals.

[0141] The substrate take-out step S30 is a step of taking out the substrate W to the outside of the chamber 100. The substrate W can be carried to the outside of the chamber 100 by a transfer unit (not shown). Since the substrate take-out step S30 can be performed in the reverse order of the substrate put-in step S10, a redundant description thereof will be omitted.

[0142] According to the above-described embodiment of the present inventive concept, even during the plasma processing of the substrate W in the processing space Al, the cleaning of the exhaust space B positioned below the processing space Al can be performed. The process byproducts deposited in the exhaust space B can be controlled. Accordingly, by maintaining the inside of the exhaust space B in a clean state, not only a smooth gas flow with respect to the exhaust space B can be induced, but also a smooth gas flow with respect to the processing space Al, the plasma space A2, and the mixing space A3 can be induced. Since the exhaust of each space is performed smoothly, the pressure inside the processing space Al where the substrate W is processed can be easily controlled. For this reason, if the plasma processing process is performed on the substrate W, the process rate with respect to the substrate W can be maintained constant.

[0143] In addition, the exhaust space cleaning step S22 can be further continuously performed for a set time after the substrate processing step S21 is performed. In addition, the exhaust space cleaning step S22 can be further performed for a set time before the substrate processing step S21 is performed.

[0144] Figure 9 is a flowchart of a substrate processing method according to another embodiment of the present inventive concept.

[0145] Reference Figure 9The substrate processing method according to the embodiment of the present inventive concept can include a substrate loading step S10, a substrate processing step S21, an exhaust space cleaning step S22, a substrate unloading step S30, and a processing space cleaning step S40. Since the description of the substrate loading step S10 and the substrate unloading step S30 is the same as or similar to the above-described description, the repeated description thereof will be omitted.

[0146] In the foregoing example, the substrate processing step S21 and the exhaust space cleaning step S22 have been described as examples, but the present inventive concept is not limited thereto. For example, in a substrate processing method according to another embodiment of the present inventive concept, the substrate processing step S21 (see Figure 10 ) can be performed, and then the exhaust space cleaning step S22 (see Figure 11 ) can be performed. Specifically, the exhaust space cleaning step S22 can be performed after the completion of the substrate processing step S21.

[0147] If the exhaust space cleaning step S22 is performed, the above-described cleaning medium CM is supplied to the exhaust space B, in which case the supplied cleaning medium CM can partially affect the atmospheric flow in the processing space A1. The effect of the atmospheric flow in the processing space A1 due to the supply of the cleaning medium CM can generally be prevented by the exhaust baffle 200, but depending on the processing precision required for the substrate W to be processed, such an effect can greatly affect the processing of the substrate W. Therefore, the substrate processing method according to another embodiment of the present inventive concept prevents the above-described processing of the substrate W from being affected by performing the exhaust space cleaning step S22 after the completion of the substrate processing step S21. In addition, the exhaust space cleaning step S22 is performed before the substrate unloading step S30 (see Figure 12 ) in which the substrate W is unloaded from the processing space A1, so as to minimize the additional time required for cleaning the exhaust space B.

[0148] If the substrate unloading step S30 is completed, the substrate W to be processed can not exist in the processing space A1. If the substrate unloading step S30 is completed, it can be necessary to clean the processing space A1. After the substrate unloading step S30, the processing space cleaning step S40 (see Figure 13 ) can be performed.

[0149] In the processing space cleaning step S40, the first gas supply unit 620 can supply the second cleaning gas G4 to the plasma space A2 to generate a second cleaning plasma CP as a cleaning medium. In the processing space cleaning step S40, the second cleaning plasma CP can sequentially pass through the plasma space A2, the mixing space A3, the processing space A1, and the exhaust space B to clean the plasma space A2, the mixing space A3, and the exhaust space B.

[0150] The processing space cleaning step S40 can be performed after the substrate unloading step S30. The processing space cleaning step S40 can perform a cleaning process on the processing space Al. In the processing space cleaning step S40, a second cleaning gas G4 is supplied to the plasma space A2. In an embodiment, the fourth gas supply unit 680 can supply the second cleaning gas G4 to the plasma space A2. The second cleaning gas G4 can include at least one of O2, N2, F2, Cl2, Ar, CF4, NF3, or a combination thereof.

[0151] The second cleaning gas G4 supplied to the plasma space A2 is excited by the top electrode 420 and the ion blocker 440 to generate a second cleaning plasma in the plasma space A2. The second gas supply unit 640 can supply the second process gas G2 to the mixing space A3. Alternatively, the second gas supply unit 640 can stop supplying the second process gas G2 to the mixing space A3. The second cleaning plasma generated in the plasma space A2 flows into the mixing space A3 through the through-hole 442 formed in the grounded ion blocker 440. Accordingly, the second cleaning plasma is supplied to the mixing space A3 in a state in which ions are removed. The second cleaning plasma, from which ions flowing into the mixing space A3 are removed, flows into the processing space Al through the hole 502 formed in the showerhead 500. In the substrate processing step S21, process byproducts, etc. generated inside the processing space Al can be removed by the second cleaning plasma (i.e., free radicals) from which ions are removed.

[0152] In addition, alternatively, when the processing space cleaning step S40 is performed, the exhaust space cleaning step S22 can also be performed. Process byproducts attached to the narrow space between the support unit 300 and the exhaust baffle 200 can not be properly removed by the second cleaning plasma CP, and the exhaust space cleaning step S22 can be performed together with the processing space cleaning step S40 to address this issue.

[0153] According to the above-described embodiments of the present inventive concept, even during plasma processing of the substrate W in the processing space Al, cleaning can be performed on the exhaust space B positioned below the processing space Al. Process byproducts deposited in the exhaust space B can be controlled. Accordingly, by maintaining the inside of the exhaust space B in a clean state, not only can a smooth gas flow be induced to flow with respect to the exhaust space B, but also a smooth gas flow can be induced to flow with respect to the processing space Al, the plasma space A2, and the mixing space A3. Since the exhaust of each space is performed smoothly, the pressure inside the processing space Al in which the substrate W is processed can be easily controlled. For this reason, if a plasma processing process is performed on the substrate W, the process rate of the substrate W can be maintained constant.

[0154] Further, a large amount of process by-products and the like that can be generated by the process plasma can be deposited in the processing space A1. Therefore, after the substrate W is processed using the process plasma, and the substrate W is taken out of the chamber 100, cleaning of the processing space A1, which is a space in which the substrate W is processed, can be performed. Therefore, cleaning processing of each of the processing space A1 and the exhaust space B can be performed at the same time.

[0155] In the above example, the supply port 830 supplies the cleaning medium CM in the lateral direction, but is not limited thereto. For example, as shown in FIG. 6, a supply port 830a according to another embodiment can supply the cleaning medium CM in a downwardly inclined direction. Further, as shown in FIG. 7, a supply port 830b according to another embodiment can supply the cleaning medium CM in an upwardly inclined direction. If the cleaning medium CM is supplied in the inclined direction as described above, the area of the support unit 300 that is cleaned can be larger. Figure 14 Figure 15 If the cleaning medium CM is supplied in the inclined direction as described above, the area of the support unit 300 that is cleaned can be larger.

[0156] Further, in the above example, the exhaust space cleaning step S22 is performed together with the substrate processing step S21 or after the substrate processing step S21 is completed, but is not limited thereto. For example, the exhaust space cleaning step S22 can be performed at the same time as the substrate loading step S10 and the substrate unloading step S30 are performed.

[0157] Effects of the present inventive concept are not limited to the above-described effects, and effects not mentioned can be clearly understood by those skilled in the art to which the present inventive concept pertains from the present specification and the accompanying drawings.

[0158] While preferred embodiments of the present inventive concept have been shown and described above, the present inventive concept is not limited to the above-described specific embodiments, and it should be noted that the present inventive concept can be variously implemented by those skilled in the art without departing from the essence of the present inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the present inventive concept.​

Claims

1. A substrate processing method comprising: processing a substrate by delivering a process plasma to a processing space of a chamber; and cleaning an exhaust space by supplying a cleaning medium to the exhaust space of the chamber positioned below the processing space, wherein the processing space and the exhaust space are separated by an exhaust baffle having a through-hole that fluidly communicates the processing space and the exhaust space.

2. The substrate processing method of claim 1, wherein the cleaning medium is a cleaning plasma generated from a cleaning gas.

3. The substrate processing method of claim 2, wherein the cleaning plasma is generated from a remote plasma source that excites the cleaning gas and generates the cleaning plasma.

4. The substrate processing method of claim 3, wherein the cleaning is performed by adding the cleaning plasma to the exhaust space from a supply port that faces a side of a support unit that supports the substrate at the processing space.

5. The substrate processing method of any one of claims 1 to 4, wherein at least a portion of a time of performing the cleaning overlaps with a time of performing the processing.

6. The substrate processing method of claim 5, wherein the cleaning is additionally performed for a set time after performing the processing.

7. The substrate processing method of claim 5, wherein the cleaning is additionally performed for a set time before performing the processing.

8. The substrate processing method of claim 1, wherein the cleaning medium is a neutral gas that has captured ions from a cleaning plasma generated by exciting a cleaning gas.

9. The substrate processing method of claim 2, wherein the cleaning gas includes at least one of CF4, NF3, N2, O2, F2, Ar, or a combination thereof.

10. A chamber cleaning method for cleaning a chamber having an internal space separated into a processing space for processing a substrate and an exhaust space by an exhaust baffle, the processing space and the exhaust space being fluidly communicated by a through-hole formed at the exhaust baffle, the exhaust space being positioned below the processing space, the method comprising cleaning the exhaust space by delivering a cleaning plasma to the exhaust space among the processing space and the exhaust space.

11. The method of claim 10, wherein the cleaning of the exhaust space is performed while processing the substrate by delivering a process plasma to the processing space.

12. The method of claim 10, wherein the cleaning of the exhaust space is performed after processing the substrate by delivering a process plasma to the processing space.

13. The method of any one of claims 10 to 12, further comprising cleaning the processing space among the processing space and the exhaust space by delivering the cleaning plasma to the processing space to clean the processing space and the exhaust space.

14. The method of claim 13, wherein cleaning the processing volume is performed after the substrate is removed from the processing volume.

15. A substrate processing method, comprising: placing a substrate into an interior space of a chamber, the interior space being partitioned into a processing volume at which the substrate is processed by an exhaust baffle and an exhaust volume, the exhaust baffle surrounding a support unit that supports the substrate at the interior space, the exhaust volume exhausting an atmosphere of the processing volume, and the exhaust baffle having a through hole that fluidly communicates the processing volume and the exhaust volume, the exhaust volume being positioned below the processing volume, processing the substrate by delivering a process plasma to the substrate supported on the support unit; cleaning the exhaust volume by delivering a cleaning plasma to the exhaust volume to remove impurities attached to the exhaust volume; and removing the substrate from the interior space.

16. The method of claim 15, wherein the cleaning the exhaust volume is performed with the processing the substrate.

17. The method of claim 16, wherein the cleaning the exhaust volume is performed after the processing the substrate is completed.

18. The method of claim 16, further comprising cleaning the processing volume among the processing volume and the exhaust volume by cleaning the processing volume and the exhaust volume by supplying a cleaning plasma to the processing volume, and wherein the cleaning the exhaust volume is performed with the cleaning the processing volume.

19. The substrate processing method of any one of claims 15 to 18, wherein a cleaning gas excited into the cleaning plasma includes at least one of CF4, NF3, N2, O2, F2, Ar, or a combination thereof.

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