Method for manufacturing vapor deposition mask

Abstract

The present disclosure provides a method for manufacturing a vapor deposition mask. A method for manufacturing a vapor deposition mask, comprising: a step of preparing a metal plate, the metal plate having a first surface and a second surface located on the opposite side of the first surface; and a processing step of forming two or more through holes on the metal plate, the processing step comprising: a first surface etching step of forming two or more first recesses on the first surface by etching the first surface; a step of covering the first recesses with a resin; a second surface etching step of forming two or more second recesses connected to the two or more first recesses on the second surface by etching the second surface; and a step of removing the resin, the first recess including a wall surface formed with a recessed portion, or the second recess including a wall surface formed with a recessed portion.

Description

[0001] This application is a divisional application of the Chinese invention patent application with an application date of October 9, 2020, an invention name of “Metal plate for manufacturing a vapor deposition mask, a manufacturing method of a metal plate, a vapor deposition mask, and a manufacturing method of a vapor deposition mask”, and an application number of 202011072285.1. Technical Field

[0002] Embodiments of the present disclosure relate to a metal plate for manufacturing a vapor deposition mask, a method for manufacturing the metal plate, a vapor deposition mask, and a method for manufacturing the vapor deposition mask. Background Art

[0003] In recent years, the market has demanded high-definition display devices in electronic devices such as smartphones and tablet PCs. The display devices have a pixel density of, for example, 500 ppi or more or 800 ppi or more.

[0004] Organic EL display devices have attracted attention due to their good responsiveness and / or low power consumption. As a method for forming pixels of an organic EL display device, a method is known to attach materials constituting pixels to a substrate by vapor deposition. In this case, first, a vapor deposition mask including through holes is prepared. Then, in a vapor deposition device, an organic material and / or an inorganic material are vapor deposited while the vapor deposition mask is in close contact with the substrate, thereby forming an organic material and / or an inorganic material on the substrate.

[0005] As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, there is known a method of forming a through hole in a metal plate by etching the metal plate.

[0006] Prior art documents

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent No. 5382259 Summary of the invention

[0009] Problems to be solved by the invention

[0010] An object of the embodiments of the present disclosure is to improve the accuracy of the shape of a through-hole formed in a metal plate.

[0011] Means for solving problems

[0012] In one embodiment of the present disclosure, a metal plate including a first surface and a second surface located on the opposite side of the first surface and including iron and nickel for manufacturing a vapor deposition mask may have particles including an element other than iron and nickel as a main component. In a sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) may be satisfied.

[0013] (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample is 50 or more and 3000 or less.

[0014] (2) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0015] Effects of the Invention

[0016] According to the embodiment of the present disclosure, it is possible to improve the accuracy of the shape of the through-hole formed in the metal plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a diagram showing a vapor deposition device including a vapor deposition mask device according to one embodiment of the present disclosure.

[0018] Figure 2 It is shown that the use Figure 1 A cross-sectional view of an organic EL display device manufactured using the vapor deposition mask apparatus shown.

[0019] Figure 3 1 is a plan view showing a vapor deposition mask apparatus according to one embodiment of the present disclosure.

[0020] Figure 4 It is shown Figure 3 A partial top view of the effective area of ​​the evaporation mask is shown.

[0021] Figure 5 It is along Figure 4 Cross-sectional view of line VV.

[0022] Figure 6 This is a cross-sectional view showing an example of a metal plate having particles.

[0023] Figure 7 It is shown in Figure 6 A cross-sectional view showing a process of providing a resist pattern on a metal plate.

[0024] Figure 8 The first side is shown Figure 6 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0025] Fig. 9 It is a cross-sectional view showing the step of covering the first recessed portion with resin.

[0026] Fig.10 The second side is shown Figure 6 2 is a cross-sectional view showing a step of etching a metal plate to form a second recess.

[0027] Fig.11 It is a cross-sectional view showing the process of removing the resin and the resist pattern.

[0028] Fig.12 This is a cross-sectional view showing an example of a metal plate having particles.

[0029] Fig.13 The first side is shown Fig.12 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0030] Fig.14 The first side is shown Fig.12 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0031] Fig.15 It is a cross-sectional view showing the step of covering the first recessed portion with resin.

[0032] Fig.16 The second side is shown Fig.12 2 is a cross-sectional view showing a step of etching a metal plate to form a second recess.

[0033] Fig.17 It is a cross-sectional view showing the process of removing the resin and the resist pattern.

[0034] Fig.18 This is a cross-sectional view showing an example of a metal plate having particles.

[0035] Fig.19 The first side is shown Fig.18 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0036] Fig. 20 The first side is shown Fig.18 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0037] Fig.21 It is a cross-sectional view showing the step of covering the first recessed portion with resin.

[0038] Fig. 22 The second side is shown Fig.18 2 is a cross-sectional view showing a step of etching a metal plate to form a second recess.

[0039] Fig.23 The second side is shown Fig.18 2 is a cross-sectional view showing a step of etching a metal plate to form a second recess.

[0040] Fig.24It is a cross-sectional view showing the process of removing the resin and the resist pattern.

[0041] Fig.25 It is a plan view showing a plurality of types of through holes formed in a metal plate when viewed from the first surface side.

[0042] Fig.26 The diagram shows the process of cutting out a sample from a metal plate.

[0043] Fig. 27 The figure shows the process of punching out two or more sample pieces from a sample.

[0044] Fig.28 It is a diagram showing the process of dissolving the sample sheet.

[0045] Fig.29 is a top view showing a plurality of particles distributed on a filter paper.

[0046] Fig.30 It is a diagram for explaining the process of adjusting the contrast and / or brightness of a scanning electron microscope.

[0047] Fig.31 It is a diagram for explaining the process of adjusting the contrast and / or brightness of a scanning electron microscope.

[0048] Fig.32 It is a diagram for explaining the process of adjusting the threshold value of brightness of the analysis software.

[0049] Fig.33 It is a diagram for explaining the process of adjusting the threshold value of brightness of the analysis software.

[0050] Fig.34 This is a diagram for explaining the observation range of filter paper.

[0051] Fig.35 It is a diagram showing the process of analyzing the particle composition.

[0052] Fig.36 It is a figure which shows the iron alloy ingot.

[0053] Fig.37 It is a diagram showing the process of removing the surface portion of the ingot.

[0054] Fig.38 The figure shows the process of rolling a base material to obtain a metal plate having a desired thickness.

[0055] Fig.39 It is a diagram showing the process of annealing a metal plate obtained by rolling.

[0056] Fig.40 This is a schematic diagram for overall explanation of an example of a method for producing a vapor deposition mask.

[0057] Fig.41 It is a figure which shows the process of forming a resist pattern on a metal plate.

[0058] Fig.42 It is a diagram showing the first surface etching step.

[0059] Fig.43 It is a diagram showing the second surface etching step.

[0060] Fig.44 This is a schematic diagram for explaining a first modified example of the method for manufacturing a vapor deposition mask.

[0061] Fig.45 It is a diagram for explaining a second modified example of the method for manufacturing a vapor deposition mask.

[0062] Fig.46 It is a diagram for explaining a second modified example of the method for manufacturing a vapor deposition mask.

[0063] Fig.47 It is a diagram for explaining a second modified example of the method for manufacturing a vapor deposition mask.

[0064] Fig.48 The graph shows the results of observing particles included in each sample obtained by the first mask to the seventeenth mask.

[0065] Fig.49 It is a figure which shows the result of analyzing particle composition.

[0066] Fig.50 This is a diagram showing the results of observing particles contained in each sample obtained from two or more locations of the wound body in Supplementary Evaluation 1.

[0067] Fig.51 This is a diagram showing the results of analyzing the particle composition in Supplementary Evaluation 1.

[0068] Fig.52 This is a diagram showing the results of analyzing the particle composition in Supplementary Evaluation 2.

[0069] Fig.53 This is a diagram showing the results of analyzing the particle composition in Supplementary Evaluation 2.

[0070] Fig.54 This is a cross-sectional view showing an example of a metal plate having particles.

[0071] Fig.55 The first side is shown Fig.54 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0072] Fig.56 The first side is shown Fig.54 2 is a cross-sectional view showing a step of etching a metal plate to form a first recess.

[0073] Fig.57 It is a cross-sectional view showing the step of covering the first recessed portion with resin.

[0074] Fig.58 The second side is shown Fig.54 2 is a cross-sectional view showing a step of etching a metal plate to form a second recess.

[0075] Fig.59 It is a cross-sectional view showing the process of removing the resin and the resist pattern.

[0076] Fig.60 It is a figure which shows a metal plate.

[0077] Fig.61 It is a figure which shows the process of removing the surface part of a metal plate.

[0078] Fig.62 It is a diagram for explaining a method of evaluating the relative value of the through-hole area. DETAILED DESCRIPTION

[0079] In this specification and the drawings, unless otherwise specified, terms such as "substrate", "base material", "plate", "sheet", "film" and the like, which indicate a substance that is the basis of a certain structure, are not distinguished from each other merely based on the difference in name. In this specification and the drawings, unless otherwise specified, terms such as "parallel", "orthogonal" and the values ​​of lengths and angles that define shapes, geometric conditions and their degrees are not limited to strict meanings, but are interpreted to include a range of degrees that can be expected to have the same function.

[0080] In this specification and the drawings, unless otherwise specified, when a certain structure of a certain component or region is “on” or “below”, “on the upper side” or “lower side”, or “above” or “below” other components or other regions or other structures, this includes the case where the certain structure is in direct contact with the other structure. In addition, this also includes the case where other structures are included between the certain structure and the other structure, that is, the case of indirect contact. In addition, unless otherwise specified, the phrases such as “on”, “upper side”, “above”, or “lower”, “lower side”, or “below” can also be flipped up and down.

[0081] In this specification and the drawings, unless otherwise specified, the same or similar symbols are used to mark the same parts or parts having the same functions, and their repeated descriptions are sometimes omitted. In addition, for the sake of convenience of description, the dimensional ratio of the drawings is sometimes different from the actual ratio, and a part of the structure is sometimes omitted from the drawings.

[0082] In this specification and the drawings, unless otherwise specified, the embodiments of the present disclosure may be combined with other embodiments or variations within the scope that does not cause contradictions. In addition, other embodiments may be combined with each other, or other embodiments and variations may be combined with each other within the scope that does not cause contradictions. In addition, variations may be combined with each other within the scope that does not cause contradictions.

[0083] In this specification and the drawings, unless otherwise specified, when two or more steps are disclosed in a method such as a manufacturing method, other undisclosed steps may be implemented between the disclosed steps. In addition, the order of the disclosed steps is arbitrary within the range that no contradiction occurs.

[0084] In this specification and the drawings, unless otherwise specified, the range expressed by the symbol "to" includes the numerical values ​​or elements placed before and after the symbol "to". For example, the numerical range defined by the expression "34 to 38 mass %" is the same as the numerical range defined by the expression "34 mass % or more and 38 mass % or less". For example, the range defined by the expression "through holes 25A to 25E" includes through holes 25A, 25B, 25C, 25D, and 25E.

[0085] In one embodiment of the present specification, an example of a vapor deposition mask and a method for manufacturing the same for patterning an organic material in a desired pattern on a substrate when manufacturing an organic EL display device is given for illustration. However, this embodiment is not limited to such applications, and the present embodiment can be applied to vapor deposition masks used in various applications. For example, in order to manufacture a device for displaying or projecting an image or video for representing virtual reality (so-called VR) or augmented reality (so-called AR), the vapor deposition mask of the present embodiment can be used.

[0086] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, the embodiment described below is an example of the embodiment of the present disclosure, and the present disclosure is not limited to these embodiments.

[0087] A first aspect of the present disclosure is a metal plate for manufacturing a vapor deposition mask, the metal plate comprising a first surface and a second surface located on the opposite side of the first surface, and containing iron and nickel, wherein:

[0088] having particles containing an element other than iron and nickel as a main component,

[0089] In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied:

[0090] (1) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less;

[0091] (2) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0092] The second aspect of the present disclosure may satisfy the following condition (3) in the metal plate of the first aspect.

[0093] (3) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 1,000 or less.

[0094] A third aspect of the present disclosure may satisfy the following condition (4) in the metal plate of the first aspect or the second aspect.

[0095] (4) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 20 or less.

[0096] A fourth aspect of the present disclosure may satisfy the following condition (5) in each of the metal plates of the first to third aspects.

[0097] (5) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 20 or less.

[0098] A fifth aspect of the present disclosure may satisfy the following condition (6) in each of the metal plates of the first aspect to the third aspect.

[0099] (6) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 2 or less.

[0100] According to a sixth aspect of the present disclosure, in each of the metal plates of the first to fifth aspects, the first ratio of the metal plate may be 70% or more.

[0101] The first ratio is a ratio of the first number to the total number of the particles having an equivalent circle diameter of 1 μm or more.

[0102] The above total quantity is per 1mm3 The number of the above particles having an equivalent circle diameter of 1 μm or more contained in the above sample by volume.

[0103] The first number mentioned above is per 1mm 3 The number of the above particles having an equivalent circle diameter of 1 μm or more and less than 3 μm contained in the above sample by volume.

[0104] According to a seventh aspect of the present disclosure, in each of the metal plates of the first to sixth aspects, the thickness of the metal plate may be 70 μm or less.

[0105] According to an eighth aspect of the present disclosure, in each of the metal plates of the first to sixth aspects, the thickness of the metal plate may be 50 μm or less.

[0106] According to a ninth aspect of the present disclosure, in each of the metal plates of the first to sixth aspects, the thickness of the metal plate may be 30 μm or less.

[0107] A tenth aspect of the present disclosure is a method for manufacturing a metal plate for manufacturing a vapor deposition mask, the metal plate comprising a first surface and a second surface located on the opposite side of the first surface, the method comprising:

[0108] a step of preparing a base material having an iron alloy containing nickel; and

[0109] a step of rolling the base material to produce the metal plate;

[0110] The above-mentioned metal plate has particles containing an element other than iron and nickel as a main component,

[0111] In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied:

[0112] (1) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less;

[0113] (2) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0114] The eleventh aspect of the present disclosure may be a method for producing a metal plate according to the tenth aspect, wherein the method further includes a surface treatment step of removing a surface portion of the base material or the metal plate.

[0115] According to a twelfth aspect of the present disclosure, in the method for manufacturing a metal plate according to the eleventh aspect, the surface treatment step may include a base material surface treatment step of removing the surface portion of the base material, wherein the thickness of the surface portion is 10 mm or more.

[0116] According to a 13th aspect of the present disclosure, in the method for manufacturing a metal plate according to the 11th aspect, the surface treatment step may include a metal plate surface treatment step of removing the surface portion of the metal plate, wherein the thickness of the surface portion is 5 μm or more.

[0117] According to a fourteenth aspect of the present disclosure, in the method for producing a metal plate according to the eleventh aspect, the surface treatment step may include a step of removing the surface portion by bringing a surface treatment liquid into contact with the surface of the base material or the metal plate.

[0118] A fifteenth aspect of the present disclosure may include a screening step of screening the metal plates satisfying the following conditions (1) and (2) in the metal plate manufacturing method of each of the tenth to fourteenth aspects.

[0119] (1) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less.

[0120] (2) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0121] A sixteenth aspect of the present disclosure may satisfy the following condition (3) in each of the metal plate manufacturing methods of the tenth to fifteenth aspects.

[0122] (3) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 1,000 or less.

[0123] The seventeenth aspect of the present disclosure may satisfy the following condition (4) in the metal plate manufacturing method of each of the tenth aspect to the sixteenth aspect.

[0124] (4) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 20 or less.

[0125] The eighteenth aspect of the present disclosure may satisfy the following condition (5) in the metal plate manufacturing method of each of the tenth aspect to the seventeenth aspect.

[0126] (5) Every 1mm 3The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 20 or less.

[0127] The 19th aspect of the present disclosure may satisfy the following condition (6) in the metal plate manufacturing method of each of the above-mentioned 10th aspect to the above-mentioned 18th aspect.

[0128] (6) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 2 or less.

[0129] According to a 20th aspect of the present disclosure, in the method for manufacturing a metal plate according to each of the tenth to nineteenth aspects, the first ratio of the metal plate may be 70% or more.

[0130] The first ratio is a ratio of the first number to the total number of the particles having an equivalent circle diameter of 1 μm or more.

[0131] The above total quantity is per 1mm 3 The number of the above particles having an equivalent circle diameter of 1 μm or more contained in the above sample by volume.

[0132] The first number mentioned above is per 1mm 3 The number of the above particles having an equivalent circle diameter of 1 μm or more and less than 3 μm contained in the above sample by volume.

[0133] According to a 21st aspect of the present disclosure, in the method for manufacturing a metal plate according to each of the 10th to 20th aspects, the thickness of the metal plate may be 70 μm or less.

[0134] According to a 22nd aspect of the present disclosure, in each of the metal plate manufacturing methods of the 10th to 20th aspects, the thickness of the metal plate may be 50 μm or less.

[0135] According to a 23rd aspect of the present disclosure, in the method for manufacturing a metal plate according to each of the 10th to 20th aspects, the thickness of the metal plate may be 30 μm or less.

[0136] A 24th aspect of the present disclosure is a vapor deposition mask comprising:

[0137] a metal plate including a first surface and a second surface located on the opposite side of the first surface, and containing iron and nickel; and

[0138] Two or more through holes are formed in the metal plate,

[0139] The above-mentioned metal plate has particles containing an element other than iron and nickel as a main component,

[0140] In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied:

[0141] (1) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less;

[0142] (2) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0143] A 25th aspect of the present disclosure is a method for manufacturing a vapor deposition mask, comprising:

[0144] a step of preparing a metal plate including a first surface and a second surface located on the opposite side of the first surface and containing iron and nickel; and

[0145] The processing step is to form two or more through holes on the metal plate.

[0146] The above-mentioned metal plate has particles containing an element other than iron and nickel as a main component,

[0147] In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied:

[0148] (1) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less;

[0149] (2) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0150] First, refer to Figure 1 The vapor deposition device 90 for performing a vapor deposition process in which a vapor deposition material is deposited on an object will be described. Figure 1 As shown, the evaporation device 90 may include a evaporation source 94, a heater 96, and a evaporation mask device 10 therein. The evaporation device 90 further includes an exhaust unit for making the interior of the evaporation device 90 a vacuum atmosphere. The evaporation source 94 is, for example, a crucible. The evaporation source 94 contains an evaporation material 98 such as an organic light-emitting material. The heater 96 heats the evaporation source 94 to evaporate the evaporation material 98 under the vacuum atmosphere. The evaporation mask device 10 may be arranged in a manner facing the evaporation source 94.

[0151] The vapor deposition mask device 10 is described below. Figure 1As shown in FIG. 1 , the vapor deposition mask device 10 may include at least one vapor deposition mask 20 and a frame 15 for supporting the vapor deposition mask 20. The frame 15 may support the vapor deposition mask 20 in a state where the vapor deposition mask 20 is stretched in the surface direction thereof so that the vapor deposition mask 20 does not bend. Figure 1 As shown, the vapor deposition mask 20 can be arranged in the vapor deposition device 90 in a manner opposite to a substrate, such as an organic EL substrate 92, which is an object to which the vapor deposition material 98 is attached. In the following description, the surface of the vapor deposition mask 20 on the side of the organic EL substrate 92 is referred to as the first surface 20a, and the surface on the opposite side of the first surface 20a is referred to as the second surface 20b.

[0152] like Figure 1 As shown, the vapor deposition mask device 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 on the opposite side to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be attracted to the magnet 93 side by magnetic force, so that the vapor deposition mask 20 and the organic EL substrate 92 are closely attached. Although not shown in the figure, an electrostatic chuck using electrostatic force (Coulomb force) can also be used to make the vapor deposition mask 20 and the organic EL substrate 92 closely attached.

[0153] Figure 3 2 is a top view showing the vapor deposition mask device 10 when viewed from the first surface 20a side of the vapor deposition mask 20. Figure 3 As shown, the vapor deposition mask device 10 includes two or more vapor deposition masks 20. Each vapor deposition mask 20 includes a pair of long sides 26 and a pair of short sides 27, and has a rectangular shape, for example. Each vapor deposition mask 20 is fixed to the frame 15 at the pair of short sides 27 or the vicinity thereof, for example, by welding.

[0154] The vapor deposition mask 20 includes a metal plate having two or more through holes 25 formed thereon that penetrate the vapor deposition mask 20. The vapor deposition material 98 evaporated from the vapor deposition source 94 and reaching the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through holes 25 of the vapor deposition mask 20. Thus, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the positions of the through holes 25 of the vapor deposition mask 20.

[0155] Figure 2 It is shown that the use Figure 1A cross-sectional view of an organic EL display device 100 manufactured by a vapor deposition device 90. The organic EL display device 100 may include an organic EL substrate 92 and pixels including a vapor deposition material 98 arranged in a pattern. Although not shown in the figure, the organic EL display device 100 may further include electrodes electrically connected to the pixels including the vapor deposition material 98. For example, the electrodes are pre-set on the organic EL substrate 92 before the vapor deposition material 98 is attached to the organic EL substrate 92 through a vapor deposition process. The organic EL display device 100 may further include other components such as a sealing component that seals the space around the pixel including the vapor deposition material 98 from the outside. Therefore, Figure 2 The organic EL display device 100 can also be said to be an organic EL display device intermediate produced in an intermediate stage of manufacturing the organic EL display device.

[0156] In the case of performing color display based on multiple colors, a vapor deposition device 90 equipped with a vapor deposition mask 20 corresponding to each color is prepared, and the organic EL substrate 92 is sequentially placed in each vapor deposition device 90. Thus, for example, an organic light-emitting material for red, an organic light-emitting material for green, and an organic light-emitting material for blue can be sequentially vapor-deposited on the organic EL substrate 92.

[0157] The evaporation process is sometimes carried out inside the evaporation device 90 in a high-temperature atmosphere. In this case, during the evaporation process, the evaporation mask 20, the frame 15, and the organic EL substrate 92 maintained inside the evaporation device 90 are also heated. At this time, the evaporation mask 20, the frame 15, and the organic EL substrate 92 show a behavior of dimensional change based on their respective thermal expansion coefficients. Therefore, the thermal expansion coefficients of the evaporation mask 20 and the frame 15 are preferably the same value as the thermal expansion coefficient of the organic EL substrate 92. Thus, it is possible to suppress the difference in the dimensional change rate of the evaporation mask 20, the frame 15, and the organic EL substrate 92 based on the thermal expansion coefficient. Therefore, it is possible to suppress the reduction in the dimensional accuracy and positional accuracy of the evaporation material attached to the organic EL substrate 92 due to the thermal expansion of the evaporation mask 20, the frame 15, the organic EL substrate 92, etc.

[0158] For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the evaporation mask 20 and the frame 15. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the metal plate constituting the evaporation mask 20, an iron alloy having a total content of nickel and cobalt of 28% by mass or more and 54% by mass or less and a cobalt content of 0% by mass or more and 6% by mass or less can be used.

[0159] The content of nickel and cobalt in the metal plate can be 28% by mass or more and 38% by mass or less. In this case, as specific examples of iron alloys containing nickel or nickel and cobalt, Invar alloy materials, super Invar alloy materials, extreme Invar alloy materials, etc. can be cited. Invar alloy materials are iron alloys containing 34% by mass or more and 38% by mass of nickel, and the balance is iron and inevitable impurities. Super Invar alloy materials are iron alloys containing 30% by mass or more and 34% by mass of nickel, cobalt, and the balance is iron and inevitable impurities. Extreme Invar alloy materials are iron alloys containing 28% by mass or more and 34% by mass of nickel, 2% by mass or more and 7% by mass of cobalt, 0.1% by mass or more and 1.0% by mass of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the balance is iron and inevitable impurities.

[0160] The content of nickel and cobalt in the metal plate may be 38% by mass or more and 54% by mass or less in total. In this case, as a specific example of an iron alloy containing nickel or nickel and cobalt, a low thermal expansion Fe-Ni plating alloy or the like may be cited. The low thermal expansion Fe-Ni plating alloy is an iron alloy containing 38% by mass or more and 54% by mass or less of nickel, and the remainder being iron and inevitable impurities.

[0161] During the evaporation process, when the temperatures of the evaporation mask 20, the frame 15, and the organic EL substrate 92 do not reach a high temperature, it is not necessary to make the thermal expansion coefficients of the evaporation mask 20 and the frame 15 equal to the thermal expansion coefficient of the organic EL substrate 92. In this case, as a material constituting the evaporation mask 20, a material other than the above-mentioned iron alloy can be used. For example, an iron alloy other than the above-mentioned iron alloy containing nickel, such as an iron alloy containing chromium, can be used. As an iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. An alloy other than an iron alloy, such as nickel or a nickel-cobalt alloy, can also be used.

[0162] Next, the evaporation mask 20 is described in detail. Figure 3 As shown, the vapor deposition mask 20 may include a first end portion 17 a and a second end portion 17 b that are opposed to each other in the first direction D1 of the vapor deposition mask 20 , and a middle portion 18 located between the pair of end portions 17 a and 17 b .

[0163] First, the end portions 17a and 17b are described in detail. The end portions 17a and 17b are regions extending from the end portions of the vapor deposition mask 20 in the first direction D1. The end portions 17a and 17b have an area capable of cutting out a sample described later. The end portions 17a and 17b may be at least partially fixed to the frame 15. In the present embodiment, the end portions 17a and 17b are integrally formed with the middle portion 18. The end portions 17a and 17b may also be formed by a component separate from the middle portion 18. In this case, the end portions 17a and 17b are joined to the middle portion 18, for example, by welding.

[0164] Next, the middle portion 18 is described. The middle portion 18 includes: at least one effective area 22 in which a through hole 25 is formed from the first surface 20a to the second surface 20b; and a peripheral area 23 surrounding the effective area 22. The effective area 22 is an area of ​​the vapor deposition mask 20 that faces the display area of ​​the organic EL substrate 92.

[0165] exist Figure 3 In the example shown, the middle portion 18 includes two or more effective regions 22 arranged at predetermined intervals along the long side 26 of the evaporation mask 20. One effective region 22 corresponds to the display region of one organic EL display device 100. Figure 1 The vapor deposition mask device 10 shown can perform vapor deposition on multiple surfaces of the organic EL display device 100. There is also a case where one effective area 22 corresponds to more than two display areas. Although not shown, more than two effective areas 22 can be arranged at a predetermined interval in the second direction D2 of the vapor deposition mask 20.

[0166] like Figure 3 As shown, the effective area 22 has, for example, a substantially quadrilateral shape when viewed from above, more precisely, a substantially rectangular shape when viewed from above. Although not shown, each effective area 22 may have a contour of various shapes depending on the shape of the display area of ​​the organic EL substrate 92. For example, each effective area 22 may have a circular contour. Each effective area 22 may also have a contour that is the same as the outer shape of a display device such as a smartphone.

[0167] Hereinafter, the effective area 22 will be described in detail. Figure 4 2 is a plan view of the effective area 22 enlarged and shown from the second surface 20b side of the vapor deposition mask 20. Figure 4 As shown, in the example shown in the figure, the two or more through holes 25 formed in each effective area 22 can be arranged at a predetermined pitch along two directions orthogonal to each other in the effective area 22 .

[0168] Figure 5 It is along Figure 4 The cross-sectional view of the effective area 22 in the VV direction. Figure 5 As shown, two or more through holes 25 penetrate from the first surface 20a which is one side along the normal direction N of the vapor deposition mask 20 to the second surface 20b which is the other side along the normal direction N of the vapor deposition mask 20. In the example shown in the figure, as described in detail later, the first recess 30 is formed by etching on the first surface 64a of the metal plate 64 which is one side along the normal direction N of the vapor deposition mask 20, and the second recess 35 is formed on the second surface 64b of the metal plate 64 which is the other side along the normal direction N of the vapor deposition mask 20. The first recess 30 is connected to the second recess 35, whereby the second recess 35 and the first recess 30 are formed in a manner that is interconnected. The through hole 25 is composed of the second recess 35 and the first recess 30 connected to the second recess 35. As shown in FIG. Figure 4 and Figure 5 As shown in FIG. 1 , the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41. Figure 4 and Figure 5 In the illustrated example, the connection portion 41 defines a through portion 42 where the opening area of ​​the through hole 25 is the smallest when the vapor deposition mask 20 is viewed from above.

[0169] like Figure 5 As shown, on the first surface 20a side of the vapor deposition mask 20, two adjacent through holes 25 are separated from each other along the first surface 64a of the metal plate 64. On the second surface 20b side of the vapor deposition mask 20, two adjacent second recesses 35 can also be separated from each other along the second surface 64b of the metal plate 64. That is, the second surface 64b of the metal plate 64 can remain between the two adjacent second recesses 35. In the following description, the portion that is not etched and remains in the effective area 22 of the second surface 64b of the metal plate 64 is also referred to as the top 43. By making the vapor deposition mask 20 in a manner that leaves such a top 43, the vapor deposition mask 20 can have sufficient strength. Thus, it is possible to suppress damage to the vapor deposition mask 20 during, for example, transportation. It should be noted that if the width β of the top 43 is too large, a shadow will be generated in the vapor deposition process, which may reduce the utilization efficiency of the vapor deposition material 98. Therefore, it is preferred to manufacture the vapor deposition mask 20 in a manner that the width β of the top 43 is not too large.

[0170] In such Figure 1 When the vapor deposition mask device 10 is accommodated in the vapor deposition device 90 as shown in FIG. Figure 5 As shown by the double-dashed line in FIG. 1 , the first surface 20a of the vapor deposition mask 20 faces the organic EL substrate 92, and the second surface 20b of the vapor deposition mask 20 is located on the vapor deposition source 94 side holding the vapor deposition material 98. Therefore, the vapor deposition material 98 is attached to the organic EL substrate 92 through the second concave portion 35 whose opening area gradually decreases. Figure 5As shown by the arrow from the second surface 20b side toward the first surface 20a in FIG. 2 , the evaporation material 98 not only moves from the evaporation source 94 to the organic EL substrate 92 along the normal direction N of the organic EL substrate 92, but also sometimes moves in a direction that is greatly inclined relative to the normal direction N of the organic EL substrate 92. At this time, if the thickness of the evaporation mask 20 is large, the evaporation material 98 that moves obliquely is likely to hang on the top 43, the wall surface 36 of the second recess 35, or the wall surface 31 of the first recess 30, and as a result, the proportion of the evaporation material 98 that cannot pass through the through hole 25 increases. Therefore, in order to improve the utilization efficiency of the evaporation material 98, it is considered that it is preferable to reduce the thickness t of the evaporation mask 20, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. That is, it can be said that it is preferable to use a metal plate 64 with a thickness t as small as possible as long as the strength of the evaporation mask 20 can be ensured. The thickness t is the thickness of the surrounding area 23, that is, the thickness of the portion of the vapor deposition mask 20 where the first recess 30 and the second recess 35 are not formed. Therefore, the thickness t can also be said to be the thickness of the metal plate 64. The thickness t of the metal plate 64 can be, for example, 100 μm or less, 80 μm or less, 70 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, 30 μm or less, 25 μm or less, 20 μm or less, or 18 μm or less.

[0171] On the other hand, if the thickness t of the metal plate 64 is too small, the strength of the vapor deposition mask 20 is reduced, and the vapor deposition mask 20 is easily damaged or deformed. Considering this point, the thickness t of the metal plate 64 can be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more.

[0172] The range of the thickness t of the metal plate 64 can be specified by the first group consisting of 8μm, 10μm, 13μm and 15μm, and / or the second group consisting of 18μm, 20μm, 25μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm. The range of the thickness t of the metal plate 64 can be specified by a combination of any one of the values ​​included in the above-mentioned first group and any one of the values ​​included in the above-mentioned second group. The range of the thickness t of the metal plate 64 can also be specified by a combination of any two of the values ​​included in the above-mentioned first group. The range of the thickness t of the metal plate 64 can also be specified by a combination of any two of the values ​​included in the above-mentioned second group. For example, it may be 8 μm to 100 μm, 8 μm to 80 μm, 8 μm to 70 μm, 8 μm to 60 μm, 8 μm to 50 μm, 8 μm to 40 μm, 8 μm to 30 μm, 8 μm to 25 μm, 8 μm to 20 μm, 8 μm to 18 μm, 8 μm to 15 μm, 8 μm to 13 μm, 8 μm to 10 μm, 10 μm to 30 μm, 10 μm to 25 μm, 10 μm to 20 μm, 10 μm to 18 μm, 10 μm to 15 μm, 10 μm to 13 μm, 13 μm to 30 μm, or 13 μm. It can be above 25μm and below 13μm, it can be above 20μm and below 13μm, it can be above 18μm and below 13μm, it can be above 15μm and below 15μm, it can be above 30μm and below 15μm, it can be above 25μm and below 15μm, it can be above 20μm and below 15μm, it can be above 18μm and below 18μm, it can be above 30μm and below 18μm, it can be above 20μm and below 25μm, it can be above 25μm and below 30μm, it can be above 30μm and below 100μm, it can be above 40μm and below 100μm, it can be above 50μm and below 100μm, it can be above 60μm and below 100μm, it can be above 70μm and below 100μm, it can be above 80μm and below 100μm.

[0173] A contact measurement method was used as a method for measuring the thickness of the metal plate 64 and the vapor deposition mask 20. As the contact measurement method, a length gauge "MT1271" of HEIDENHAIN-METRO manufactured by HEIDENHAIN Corporation having a ball guide plunger was used.

[0174] The metal plate 64 used to manufacture the vapor deposition mask 20 can be sold or transported in the form of a wound body wound on a core, for example. In this case, the above-mentioned range of the thickness t of the metal plate 64 can be satisfied in the metal plate 64 in the wound body state. In the case where the method for manufacturing the vapor deposition mask 20 includes a step of processing the metal plate 64 in a manner to reduce the thickness of the metal plate 64, the above-mentioned range of the thickness t of the metal plate 64 can be satisfied in the metal plate 64 in a state where the thickness is reduced by processing. The step of processing the metal plate 64 in a manner to reduce the thickness of the metal plate 64 includes, for example, a step of etching the entire area of ​​at least the portion of the first surface 64a or the second surface 64b of the metal plate 64 corresponding to the effective area 22 of the vapor deposition mask 20. Hereinafter, the step of etching the entire area of ​​at least the portion of the metal plate 64 corresponding to the effective area 22 is also referred to as thinning.

[0175] When the metal plate 64 is thinned by etching, if the reduction in thickness of the metal plate 64 is large, the thickness of the metal plate 64 after thinning is likely to deviate. In view of this, even when the metal plate 64 is thinned, it is preferred that the thickness t of the metal plate 64 in the wound state is reduced to a certain extent. For example, the thickness t of the metal plate 64 may be less than 50 μm, less than 45 μm, less than 40 μm, or less than 35 μm. The candidate value of the upper limit in this paragraph may also be combined with the above-mentioned multiple candidate values ​​of the lower limit and the above-mentioned multiple candidate values ​​of the upper limit.

[0176] exist Figure 5 In the figure, the minimum angle formed by the straight line M1 passing through the connecting portion 41 of the through portion 42 constituting the through hole 25 and any other position of the wall surface 36 of the second recessed portion 35 with respect to the normal direction N of the vapor deposition mask 20 is represented by the symbol θ1. In order to make the vapor deposition material 98 that moves obliquely reach the organic EL substrate 92 as much as possible without reaching the wall surface 36, it is advantageous to increase the angle θ1. In addition to reducing the thickness t of the vapor deposition mask 20, reducing the width β of the top 43 mentioned above is also effective in increasing the angle θ1.

[0177] exist Figure 5In FIG. 1 , the symbol α represents the width of the portion (hereinafter also referred to as the rib portion) remaining in the effective area 22 of the first surface 64a of the metal plate 64 without being etched. The width α of the rib portion and the size r of the through portion 42 are appropriately determined according to the size of the organic EL display device and the number of display pixels. For example, the width α of the rib portion is greater than 5 μm and less than 40 μm, and the size r of the through portion 42 is greater than 10 μm and less than 60 μm.

[0178] The width α of the rib portion may be, for example, greater than 5 μm, greater than 10 μm, greater than 15 μm, or greater than 20 μm. The width α of the rib portion may be, for example, less than 45 μm, less than 50 μm, less than 55 μm, or less than 60 μm. The range of the width α of the rib portion may be specified by the first group consisting of 5 μm, 10 μm, 15 μm, and 20 μm, and / or the second group consisting of 45 μm, 50 μm, 55 μm, and 60 μm. The range of the width α of the rib portion may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the width α of the rib portion may also be specified by a combination of any two of the values ​​included in the first group. The range of the width α of the rib portion may also be specified by a combination of any two of the values ​​included in the second group. For example, it can be 5 μm to 60 μm, 5 μm to 55 μm, 5 μm to 50 μm, 5 μm to 45 μm, 5 μm to 20 μm, 5 μm to 15 μm, 5 μm to 10 μm, 10 μm to 60 μm, 10 μm to 55 μm, 10 μm to 50 μm, 10 μm to 45 μm, 10 μm to 20 μm, 10 μm to 15 μm, 15 μm to 60 μm, or 10 μm to 60 μm. It can be above 15μm and below 55μm, can be above 15μm and below 50μm, can be above 15μm and below 45μm, can be above 15μm and below 20μm, can be above 20μm and below 60μm, can be above 20μm and below 55μm, can be above 20μm and below 50μm, can be above 20μm and below 45μm, can be above 45μm and below 60μm, can be above 45μm and below 55μm, can be above 45μm and below 50μm, can be above 50μm and below 60μm, can be above 50μm and below 55μm, or can be above 55μm and below 60μm.

[0179] The dimension r of the through portion 42 may be, for example, greater than 10 μm, greater than 15 μm, greater than 20 μm, or greater than 25 μm. The dimension r of the through portion 42 may be, for example, less than 40 μm, less than 45 μm, less than 50 μm, or less than 55 μm. The range of the dimension r of the through portion 42 may be specified by the first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm, and / or the second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 42 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension r of the through portion 42 may also be specified by a combination of any two of the values ​​included in the first group. The range of the dimension r of the through portion 42 may also be determined by a combination of any two of the values ​​included in the second group. For example, it may be greater than 10μm and less than 55μm, greater than 10μm and less than 50μm, greater than 10μm and less than 45μm, greater than 10μm and less than 40μm, greater than 10μm and less than 25μm, greater than 10μm and less than 20μm, greater than 10μm and less than 15μm, greater than 15μm and less than 55μm, greater than 15μm and less than 50μm, greater than 15μm and less than 45μm, greater than 15μm and less than 40μm, greater than 15μm and less than 25μm, greater than 15μm and less than 20μm, or greater than 20μm and less than 55μm , can be above 20μm and below 50μm, can be above 20μm and below 45μm, can be above 20μm and below 40μm, can be above 20μm and below 25μm, can be above 25μm and below 55μm, can be above 25μm and below 50μm, can be above 25μm and below 45μm, can be above 25μm and below 40μm, can be above 40μm and below 55μm, can be above 40μm and below 50μm, can be above 40μm and below 45μm, can be above 45μm and below 55μm, can be above 45μm and below 50μm, and can be above 50μm and below 55μm.

[0180] exist Figure 4 and Figure 5 , an example is shown in which the second surface 64b of the metal plate 64 remains between two adjacent second recesses 35, but the present invention is not limited thereto. Although not shown, etching may be performed in a manner such that two adjacent second recesses 35 are connected. That is, there may be a portion where the second surface 64b of the metal plate 64 does not remain between two adjacent second recesses 35.

[0181] The inventors have repeatedly studied and found the following tendency: if the pixel density of the vapor deposition mask 20 increases, the plurality of particles contained in the metal plate 64 are likely to have an adverse effect on the shape accuracy of the through hole 25 of the vapor deposition mask 20. The cause is examined below. In addition, the cause of the above phenomenon is not limited to the following examination, and other examinations may also be used.

[0182] First, the multiple particles contained in the metal plate 64 are described. The inventors conducted in-depth research and found that there are multiple particles in the metal plate 64 made of an iron alloy containing iron and nickel used in the manufacture of the vapor deposition mask 20. The particles in the metal plate 64 are caused by additives such as aluminum and silicon added to remove impurities during the melting process of the base material of the metal plate 64. The particles contain elements other than iron and nickel as main components. Such particles are sometimes also called inclusions. "Main component" refers to the element with the highest weight % among the elements contained in the particles. The particles can be composed of a single element or a compound containing multiple elements. "Base material" refers to the form of the iron alloy before rolling. Examples of base materials are the first ingot, the second ingot, the third ingot, etc. described later. "Metal plate" refers to the form of the iron alloy after a hot rolling process or a cold rolling process.

[0183] When the number of particles contained in the metal plate 64 is large or the size of the particles contained in the metal plate 64 is large, the shape of the through hole 25 formed by etching in the metal plate 64 as described below may deviate from the design. Hereinafter, a part of the process of manufacturing the vapor deposition mask 20 using the metal plate 64 will be described, and the influence of the particles 64d in the metal plate 64 on the manufacturing process of the vapor deposition mask 20 will be described.

[0184] First, a description will be given of a case where the influence of particles in the metal plate 64 on the shape accuracy of the through-hole 25 of the vapor deposition mask 20 is so slight as to be negligible. Figure 6 64d. The metal plate 64 includes a main phase 64c and a plurality of particles 64d present in the main phase 64c. The main phase 64c includes, for example, a plurality of crystal grains composed of an iron alloy containing iron and nickel. The iron alloy constituting the main phase 64c may contain other elements such as cobalt in addition to iron and nickel. The range of the content of nickel and cobalt in the main phase 64c may be the same as the range described above with respect to the material of the metal plate constituting the evaporation mask 20.

[0185] The particles 64d are, for example, objects that are poorly soluble in nitric acid. The particles 64d contain elements other than iron and nickel as main components. For example, the particles 64d contain aluminum, magnesium, silicon, phosphorus, sulfur, chromium, or zirconium, or compounds containing these elements. Compounds are, for example, oxides, sulfides, carbides, nitrides, and intermetallic compounds. The shape of the particles 64d is arbitrary, for example, granular.

[0186] like Figure 6 As shown, the particle 64d may be located inside the main phase 64c or on the surface of the main phase 64c. “Located on the surface of the main phase 64c” means that the particle 64d is at least partially exposed on the first surface 64a or the second surface 64b of the metal plate 64.

[0187] When the particle 64d is located inside the main phase 64c, the particle 64d may be located in the surface layer of the main phase 64c or in the main layer of the main phase 64c. The surface layer is a portion within 5 μm of the first surface 64a or the second surface 64b of the metal plate 64 in the thickness direction. The main layer is a portion exceeding 5 μm from the first surface 64a and the second surface 64b of the metal plate 64 in the thickness direction.

[0188] The plurality of particles 64d may be uniformly distributed in both the surface layer and the main layer of the main phase 64c. The plurality of particles 64d may also be more distributed in the surface layer than in the main layer of the main phase 64c. The plurality of particles 64d may also be more distributed in the main layer than in the surface layer of the main phase 64c.

[0189] In the manufacturing process of the vapor deposition mask 20, Figure 7 As shown, a first resist pattern 65c including a first resist film 65a is formed on a first surface 64a of a metal plate 64, and a second resist pattern 65d including a second resist film 65b is formed on a second surface 64b of the metal plate 64. The steps of forming the resist patterns 65c and 65d are described below.

[0190] First, resist films 65a and 65b containing a negative photosensitive resist material are formed on the first surface 64a and the second surface 64b of the metal plate 64. For example, a coating liquid containing a photosensitive resist material such as casein is applied to the first surface 64a and the second surface 64b of the metal plate 64. Then, the coating liquid is dried to form the resist films 65a and 65b. Alternatively, the resist films 65a and 65b may be formed by pasting a dry film on the first surface 64a and the second surface 64b of the metal plate 64. The dry film contains, for example, an acrylic light-curing resin.

[0191] Next, an exposure mask that does not allow light to pass through the areas to be removed in the resist films 65a and 65b is prepared, and the exposure mask is placed on 65a and 65b, respectively. At this time, an alignment process for adjusting the relative positional relationship between the exposure mask on the first surface 64a side and the exposure mask on the second surface 64b side can be performed. As the exposure mask, for example, a glass dry plate that does not allow light to pass through the areas to be removed in the resist films 65a and 65b is used. Then, the exposure mask is fully bonded to the resist films 65a and 65b by vacuum bonding.

[0192] As the photosensitive resist material, a positive resist material may be used. In this case, an exposure mask that allows light to pass through the region to be removed in the resist film is used as an exposure mask.

[0193] Then, an exposure process is performed to expose the resist films 65a and 65b through an exposure mask. Furthermore, in order to form an image on the exposed resist films 65a and 65b, a development process is performed to develop the resist films 65a and 65b. Figure 7 As shown, a first resist pattern 65c including a first resist film 65a is formed on the first surface 64a of the metal plate 64, and a second resist pattern 65d including a second resist film 65b is formed on the second surface 64b of the metal plate 64. After the development process, a resist heat treatment process for heating the resist films 65a and 65b may be performed. In this way, the hardness of the resist films 65a and 65b can be improved, or the adhesion of the resist films 65a and 65b to the metal plate 64 can be improved. The resist heat treatment process can be performed, for example, at a temperature of 25°C or more and 400°C or less. A resist heat treatment process for heating the resist films 65a and 65b may be performed before the development process for developing the resist films 65a and 65b, in addition to the heat treatment process after the development process for developing the resist films 65a and 65b, or in place of the heat treatment process after the development process.

[0194] When the particles 64d are exposed on the surface of the metal plate 64, the resist films 65a and 65b are in contact not only with the surface of the main phase 64c, but also with the particles 64d. Therefore, compared with the case where the resist films 65a and 65b are in contact only with the surface of the main phase 64c, the contact area between the resist films 65a and 65b and the metal plate 64 can be increased. This can help improve the adhesion between the resist films 65a and 65b and the metal plate 64. The anchoring effect of the particles 64d on the resist films 65a and 65b can also help improve the adhesion between the resist films 65a and 65b and the metal plate 64.

[0195] Then, if Figure 8As shown in FIG. 1 , a first surface etching step is performed in which the first etching liquid E1 is used to etch the area of ​​the first surface 64a of the metal plate 64 that is not covered by the first resist film 65a. For example, the first etching liquid E1 is sprayed toward the first surface 64a of the metal plate 64 from a nozzle disposed on the side facing the first surface 64a of the metal plate 64. As a result, as shown in FIG. Figure 8 As shown, the first etching liquid E1 erodes the area not covered by the first resist film 65a in the metal plate 64. By etching the area not covered by the first resist film 65a in the first surface 64a of the metal plate 64, a plurality of first recesses 30 can be formed on the first surface 64a of the metal plate 64. As the first etching liquid E1, for example, an etching liquid containing ferric chloride solution and hydrochloric acid can be used.

[0196] Then, if Fig. 9 As shown in FIG. 1 , the first recess 30 is covered with a resin 69 resistant to the second etching solution used in the subsequent second surface etching step. For example, the first recess 30 is sealed with a resin 69 resistant to the second etching solution. Fig. 9 As shown, the film of the resin 69 may cover not only the first recessed portion 30 but also the first surface 64 a and the first resist pattern 65 c .

[0197] Then, if Fig.10 As shown in FIG. 1 , a second surface etching step is performed to form the second recess 35 on the second surface 64b by etching the area not covered by the second resist film 65b in the second surface 64b of the metal plate 64. For example, the second etching liquid E2 is sprayed toward the second surface 64b of the metal plate 64 from a nozzle arranged on the side facing the second surface 64b of the metal plate 64. As a result, as shown in FIG. Fig.10 As shown, the area not covered by the second resist film 65b in the metal plate 64 is eroded by the second etching liquid E2. By etching the area not covered by the second resist film 65b in the second surface 64b of the metal plate 64, a large number of second recesses 35 can be formed on the second surface 64b of the metal plate 64. The second surface etching step is performed until the first recess 30 and the second recess 35 are connected to each other, thereby forming the through hole 25. As the second etching liquid E2, for example, an etching liquid containing ferric chloride solution and hydrochloric acid can be used.

[0198] Then, if Fig.11 As shown in FIG. 1 , the resin 69 is removed from the metal plate 64. The resin 69 can be removed by using an alkaline stripping solution, for example. In the case of using an alkaline stripping solution, Fig.11 As shown, the resist films 65a and 65b may be removed simultaneously with the resin 69. After the resin 69 is removed, the resist films 65a and 65b may be removed separately from the resin 69 using a stripping solution different from the stripping solution used to strip the resin 69.

[0199] In this way, two or more through holes 25 can be formed in the metal plate 64. In the following description, the through hole 25 formed without being affected by the particles 64d in the metal plate 64 is also referred to as a standard through hole and is indicated by the reference numeral 25A.

[0200] Next, a case where the size of the through hole 25 is smaller than the standard through hole 25A due to the influence of the particles 64d in the metal plate 64 will be described. Figures 6 to 11 For parts having the same configuration or implementation as shown, repeated description may be omitted.

[0201] Fig.12 1 is a cross-sectional view showing an example of a metal plate 64 including a plurality of particles 64 d . Fig.12 The metal plate 64 shown includes particles having an equivalent circle diameter of 3 μm or more in addition to relatively small particles, such as particles having an equivalent circle diameter of less than 3 μm. In the following description, particles having an equivalent circle diameter of 3 μm or more among the particles 64d are sometimes specifically indicated by the symbol 64e. Fig.12 In the example shown, the particles 64e are present in the bulk layer of the metal plate 64. The particles 64e may be present in the surface layer of the metal plate 64.

[0202] After the resist films 65a and 65b are formed on the first surface 64a and the second surface 64b of the metal plate 64, Fig.13 As shown in FIG. 1 , a first surface etching step is performed to etch the area of ​​the first surface 64a of the metal plate 64 that is not covered by the first resist film 65a using the first etching solution E1. As a result, as shown in FIG. Fig.13 As shown, corrosion by the first etching solution E1 occurs in the region of the metal plate 64 that is not covered by the first resist film 65 a . Fig.14 This is a diagram showing a state in which corrosion by the first etching solution E1 further progresses.

[0203] In the first surface etching process, when etching reaches the location where the particles 64e exist, Fig.13 As shown, the particle 64e is exposed on the wall surface of the first recess 30. Fig.13 When etching is performed in the state shown in FIG. 1 , the particles 64e exposed on the wall surface may fall off the metal plate 64. In this case, a recessed portion is formed in the wall surface of the first recessed portion 30 at the location where the particles 64e once existed. Etching in the thickness direction of the metal plate 64 proceeds deeper in the recessed portion than in other portions. As a result, Fig.14 As shown on the right side of FIG. , it is considered that the first recess 30 formed by etching from the first surface 64a side of the metal plate 64 will reach the second surface 64b. Fig.14As shown on the left side of FIG. 6 , it is considered that the first recessed portion 30 formed by etching from the first surface 64 a side of the metal plate 64 does not reach the second surface 64 b but reaches a position close to the second surface 64 b .

[0204] Then, if Fig.15 As shown, the first recessed portion 30 is covered with a resin 69 that is resistant to a second etching solution used in a subsequent second surface etching step.

[0205] In the above Fig.14 When the first recess 30 reaches the second surface 64b as shown on the right side of Fig.15 As shown on the right side of FIG. , it is considered that the resin 69 penetrates the metal plate 64 and reaches the second surface 64b side. In this case, Fig.15 As shown on the right side of , a phenomenon in which a layer of resin 69 is formed in the gap between the second resist films 65b on the second surface 64b, that is, a phenomenon in which a part of the second surface 64b is covered with the layer of resin 69 may occur.

[0206] Then, if Fig.16 As shown in FIG. 1 , a second surface etching step is performed to form the second recess 35 on the second surface 64b by etching the area not covered by the second resist film 65b in the second surface 64b of the metal plate 64. As a result, as shown in FIG. Fig.16 As shown, corrosion by the second etching solution E2 occurs in the region of the metal plate 64 that is not covered by the second resist film 65 b.

[0207] like Fig.16 As shown on the right side of FIG. , when a layer of resin 69 is formed in the gap between the second resist films 65b, etching of the second surface 64b is hindered by the layer of resin 69. Fig.16 As shown on the right side of , it is possible that a portion that is not covered by the second resist film 65b but is not etched at all may be produced on the second surface 64b. Alternatively, since the etching of the second surface 64b is hindered by the layer of resin 69, the size of the second recess 35 may become smaller than that of the standard through hole 25A.

[0208] like Fig.15 The left side and Fig.16 As shown on the left side of FIG. 6 , even when the resin 69 penetrates the metal plate 64 but does not reach the second surface 64b side, when the resin 69 is excessively provided in the recessed portion of the first recess 30, the flow of the second etching liquid E2 may be hindered by the resin 69. In this case, the position of the connecting portion 41 connecting the first recess 30 and the second recess 35 may be located on the second surface 64b side compared with the case of the standard through hole 25A.

[0209] Then, if Fig.17As shown, the resin 69 and the resist films 65a, 65b are removed from the metal plate 64. In this way, two or more through holes 25 can be formed in the metal plate 64. In the following description, the through hole 25 having a smaller size than the standard through hole 25A due to the influence of particles in the metal plate 64 is also referred to as a reduced through hole and is represented by the symbol 25B or the symbol 25C.

[0210] exist Fig.17 In the example on the right side of FIG, the through portion 42 with the smallest opening area of ​​the reduced through hole 25B is formed by the contour of the first recess 30 formed on the second surface 64B by reaching the second surface 64B through the first surface etching process. Therefore, the size SB of the through portion 42 of the reduced through hole 25B is significantly smaller than the size SA of the through portion 42 of the standard through hole 25A.

[0211] exist Fig.17 In the example on the left side of FIG. 2 , the through portion 42 having the smallest opening area of ​​the reduced through hole 25C is formed by a connecting portion 41 connecting the first recess 30 and the second recess 35 . Fig.17 The position of the connection portion 41 of the reduced through hole 25C shown on the left side of FIG. 2 is located on the second surface 64b side compared to the case of the standard through hole 25A. Therefore, the size SC of the through portion 42 of the reduced through hole 25C is smaller than the size SA of the through portion 42 of the standard through hole 25A.

[0212] Next, a case where the size of the through hole 25 is larger than the standard through hole 25A due to the influence of particles in the metal plate 64 will be described. Figures 6 to 11 For parts having the same configuration or implementation as shown, repeated description may be omitted.

[0213] Fig.18 is a cross-sectional view showing an example of a metal plate 64 including a plurality of particles. Figure 6 Compared to the metal plate 64 shown, Fig.18 The metal plate 64 shown contains more particles 64d. Fig.18 In the example shown, some of the plurality of particles 64d exist close to each other.

[0214] After the resist films 65a and 65b are formed on the first surface 64a and the second surface 64b of the metal plate 64, Fig.19 As shown in FIG. 1 , a first surface etching step is performed to etch the area of ​​the first surface 64a of the metal plate 64 that is not covered by the first resist film 65a using the first etching solution E1. As a result, as shown in FIG. Fig.19 As shown, corrosion by the first etching solution E1 occurs in the region of the metal plate 64 that is not covered by the first resist film 65 a . Fig. 201 is a diagram showing a state in which the corrosion caused by the first etching solution E1 further develops. Fig. 20 In the example shown on the right side of FIG. 6 , particles 64 d exposed on the wall surface fall off from the metal plate 64 , and a recessed portion is formed on the wall surface of the first recessed portion 30 .

[0215] Then, if Fig.21 As shown, the first recessed portion 30 is covered with a resin 69 that is resistant to a second etching solution used in a subsequent second surface etching step.

[0216] Then, if Fig. 22 As shown in FIG. 1 , a second surface etching step is performed to form the second recess 35 on the second surface 64b by etching the area not covered by the second resist film 65b in the second surface 64b of the metal plate 64. As a result, as shown in FIG. Fig. 22 As shown, corrosion by the second etching solution E2 occurs in the region of the metal plate 64 that is not covered by the second resist film 65 b. Fig.23 2 is a diagram showing a state in which the corrosion caused by the second etching solution E2 further develops. Fig.23 In the example shown on the left side of FIG. 6 , a plurality of particles 64 d exposed on the wall surface fall off from the metal plate 64 . As a result, depressions corresponding to the particles 64 d are formed on the wall surface of the second recess 35 .

[0217] Then, if Fig.24 As shown, the resin 69 and the resist films 65a, 65b are removed from the metal plate 64. In this way, two or more through holes 25 can be formed in the metal plate 64. In the following description, the through hole 25 having a larger size than the standard through hole 25A due to the influence of particles in the metal plate 64 is also referred to as an enlarged through hole and is represented by the symbol 25D or the symbol 25E.

[0218] exist Fig.24 In the example on the right side of FIG. 2 , a portion of the through portion 42 of the enlarged through hole 25D having the smallest opening area is not constituted by the connecting portion 41 connecting the first recess 30 and the second recess 35, but is constituted by the contour of the recessed portion formed in the first recess 30. Therefore, the size SD of the through portion 42 of the enlarged through hole 25D is larger than the size SA of the through portion 42 of the standard through hole 25A.

[0219] exist Fig.24 In the example on the left side of the enlarged through hole 25E, the erosion caused by the second etching liquid E2 proceeds deeper into the portion where the depression is formed in the second recess 35. Therefore, compared with the case of the standard through hole 25A, a portion of the connecting portion 41 connecting the first recess 30 and the second recess 35 is located closer to the first surface 64a. As a result, the size SE of the through portion 42 of the enlarged through hole 25E is larger than the size SA of the through portion 42 of the standard through hole 25A. Fig.24In the example on the left side of FIG. 1 , the recessed portion formed by the falling of a plurality of particles 64d located close to each other affects the through portion 42 of the through hole 25. Therefore, the size SE of the through portion 42 of the enlarged through hole 25E may be larger than the size SD of the through portion 42 of the enlarged through hole 25D.

[0220] Fig.25 64a is a top view showing the above-mentioned multiple types of through holes 25A to 25E as viewed from the first surface 64a side. The sizes SB and SC of the reduced through holes 25B and 25C are smaller than the size SA of the standard through hole 25A. The size SB of the reduced through hole 25B is smaller than the size SC of the reduced through hole 25C. The sizes SD and SE of the enlarged through holes 25D and 25E are larger than the size SA of the standard through hole 25A. The size SE of the enlarged through hole 25E is larger than the size SD of the enlarged through hole 25D.

[0221] Next, a case where the through hole 25 is not formed in the metal plate 64 due to the influence of particles in the metal plate 64 will be described. Figures 6 to 11 For parts having the same configuration or implementation as shown, repeated description may be omitted.

[0222] Fig.54 1 is a cross-sectional view showing an example of a metal plate 64 including a plurality of particles 64 d . Fig.54 The metal plate 64 shown contains particles having an equivalent circle diameter of 5 μm or more. In the following description, the particle 64d having an equivalent circle diameter of 5 μm or more is sometimes represented by the symbol 64f. Fig.55 In the example shown, the particles 64f are present in the bulk layer of the metal plate 64. The particles 64f may be present in the surface layer of the metal plate 64.

[0223] like Fig.55 As shown, the region of the first surface 64a not covered by the first resist film 65a is etched using the first etching liquid E1. The region not covered by the first resist film 65a is eroded by the first etching liquid E1. Thus, the first recess 30 is formed on the first surface 64a. Fig.56 This is a diagram showing a state in which corrosion by the first etching solution E1 further progresses.

[0224] exist Fig.56 In the example shown on the left side of FIG. 6 , the particle 64f is located near the first surface 64a. In this case, the flow of the first etching solution E1 may be hindered by the particle 64f. Fig.56 As shown, the first recess 30 may be smaller than in the case of the standard through hole 25A.

[0225] Then, if Fig.57As shown, the first recess 30 is covered with a resin 69. The resin 69 may be in contact with the particle 64f. In this case, a depression corresponding to the particle 64f is formed on the surface of the resin 69.

[0226] Then, if Fig.58 As shown, the second etching liquid E2 is used to etch the area of ​​the second surface 64b not covered by the second resist film 65b. The area not covered by the second resist film 65b is eroded by the second etching liquid E2. Thus, the second recess 35 is formed on the second surface 64b.

[0227] exist Fig.58 In the example shown on the left side of FIG. 1 , since the first recess 30 is small, the etching of the second surface 64 b may not reach the first recess 30 . That is, the second recess 35 may not be connected to the first recess 30 .

[0228] exist Fig.58 In the example shown on the right side of FIG. 6 , particles 64f fall off from the metal plate 64 and the resin 69. When particles 64f fall off, the flow of the second etching liquid E2 may be promoted. Fig.58 In the example on the right side of FIG. 1 , the second recess 35 may be larger than the standard through hole 25A. In this case, the position of the connection portion 41 may be located closer to the first surface 64a than the standard through hole 25A.

[0229] Then, if Fig.59 As shown in FIG. 1 , the resin 69 and the resist films 65a, 65b are removed from the metal plate 64. Fig.58 In the example shown on the left side of FIG. 2 , since the second recess 35 is not connected to the first recess 30, there is no through hole 25. In the following description, the portion where the first recess 30 is not connected to the second recess 35 is also referred to as a non-through portion.

[0230] exist Fig.59 In the example shown on the right side of FIG. 4 , the through portion 42 is composed of the connecting portion 41. The position of the connecting portion 41 is located on the first surface 64a side compared with the case of the standard through hole 25A. Therefore, the size SF of the through hole 25F is larger than the size SA of the standard through hole 25A. That is, Fig.59 The through hole 25F in the example shown on the right side of FIG. 1 is an enlarged through hole.

[0231] As described above, when the metal plate 64 includes particles having an equivalent circle diameter of 5 μm or more, non-penetrating portions or enlarged through holes may be generated. Fig.17 Similarly to the example on the right, a shrinking through hole may also be produced.

[0232] Particles with an equivalent circle diameter of 5 μm or more may cause various defects. Therefore, the probability that a particle with an equivalent circle diameter of 5 μm or more will produce a defective vapor deposition mask is higher than the probability that a particle with an equivalent circle diameter of 3 μm or more will produce a defective vapor deposition mask.

[0233] The particles 64d, 64e, and 64f contained in the metal plate 64 may have an adverse effect on the shape accuracy of the through hole 25 of the vapor deposition mask 20. When the thickness of the metal plate 64 is small, the reduction in the dimensional accuracy of the through hole 25 may become particularly significant. This is because the ratio of the size of the particles 64d, 64e, and 64f to the thickness of the metal plate 64 is large.

[0234] In order to solve such a problem, the present embodiment proposes using a metal plate satisfying the following conditions (1) and (2) as the metal plate 64 . A sample is taken from the metal plate 64 .

[0235] (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample is 50 or more and 3000 or less.

[0236] (2) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

[0237] As mentioned above Figure 18 to Figure 24 As shown in FIG. 1 , when the number of particles 64d contained in the metal plate 64 increases, a depression caused by the falling of particles 64d is easily formed on the wall surface of the first recess 30 and / or the wall surface of the second recess 35. As a result, the size of the through hole 25 is easily deviated from the design value. For example, it is easy to form enlarged through holes 25D and 25E having a larger size than the standard through hole 25A. In contrast, by increasing the number of particles 64d per 1 mm as shown in the above condition (1), 3 The upper limit of the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume sample is set to 3000, which can prevent the size of the through hole 25 from deviating from the designed value, as demonstrated in the examples described below. In particular, it can prevent the size of the through hole 25 from becoming larger than the designed value.

[0238] On the other hand, as described above, the particles exposed on the surface of the metal plate 64 can contribute to improving the adhesion between the resist films 65a, 65b and the metal plate 64. Therefore, by setting the particles exposed on the surface of the metal plate 64 to 1 mm 3The lower limit of the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume sample is set to 50, which can prevent the resist films 65a and 65b of the resist patterns 65c and 65d from peeling off from the metal plate 64 during the manufacturing process of the vapor deposition mask 20 such as the etching process.

[0239] The higher the pixel density of the display device, the shorter the arrangement period of the through holes 25 of the vapor deposition mask 20, and the smaller the width and other dimensions of the resist films 65a, 65b of the resist patterns 65c, 65d. On the other hand, since the width and other dimensions of the resist films 65a, 65b are small, the smaller the area of ​​the resist films 65a, 65b, the easier it is for the resist films 65a, 65b to be peeled off from the metal plate 64 during the manufacturing process of the vapor deposition mask 20. According to this embodiment, the adhesion between the resist films 65a, 65b and the metal plate 64 can be improved, so that the resist films 65a, 65b with small sizes can be easily used. Therefore, it is easy to shorten the arrangement period of the through holes 25 of the vapor deposition mask 20, and a display device with a high pixel density can be manufactured.

[0240] As mentioned above Figure 12 to Figure 17 As shown in FIG. 1 , when the size of the particles 64e included in the metal plate 64 increases, it is considered that the first recess 30 formed on the first surface 64a by the first surface etching process will reach the second surface 64b, or the resin 69 provided in the first recess 30 will reach the vicinity of the second surface 64b. In this case, the second surface etching process implemented from the second surface 64b side may be hindered by the resin 69. As a result, it is easy to form, for example, reduced through holes 25B and 25C having a size smaller than the standard through hole 25A. In contrast, by increasing the size of the particles 64e every 1 mm as shown in the above condition (2), 3 The upper limit of the number of particles having an equivalent circle diameter of 3 μm or more contained in the volume sample is set to 50. As demonstrated in the examples described below, the size of the through hole 25 can be prevented from deviating from the designed value. In particular, the size of the through hole 25 can be prevented from becoming smaller than the designed value.

[0241] As described above, the thinner the metal plate 64 is, the more likely it is that the particles 64d and 64e will have adverse effects. Here, by using the embodiment of the present disclosure, even when a relatively thin metal plate 64 having a thickness of less than 30 μm or less than 20 μm is used as demonstrated in the examples, it is possible to manufacture a vapor deposition mask 20 having through holes 25 with desired dimensional accuracy.

[0242] As the metal plate 64, a metal plate satisfying the following condition (3) may be used.

[0243] (3) Every 1mm 3The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume sample is 1,000 or less.

[0244] By making the metal plate 64 satisfy condition (3), it is possible to prevent the plurality of particles 64d from being close to each other in the metal plate 64. Thus, it is possible to prevent the plurality of particles 64d from falling off the wall surface of one first recess 30 or the wall surface of one second recess 35. Thus, it is possible to prevent a larger volume of a recessed portion, for example, a recessed portion equivalent to the volume of the plurality of particles 64d, from being formed on the wall surface of the first recess 30 or the wall surface of the second recess 35. Therefore, it is possible to prevent the size of the through hole 25 from deviating from the design value. In particular, it is possible to prevent the size of the through hole 25 from becoming larger than the design value.

[0245] In conditions (1) and (3), for every 1 mm 3 Although the upper limit and lower limit examples of the number of particles having an equivalent circle diameter of 1 μm or more contained in the sample volume have been described, other upper limit and lower limit values ​​may be adopted. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample may be, for example, 50 or more, 100 or more, 200 or more, or 300 or more. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample may be, for example, 3000 or less, 2000 or less, 1000 or less, or 500 or less.

[0246] Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the sample of volume may be, for example, 50 or more, 100 or more, 200 or more, or 300 or more. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample may be, for example, 500 or less, 1000 or less, 2000 or less, or 3000 or less. 3 The range of the number of particles having an equivalent circular diameter of 1 μm or more contained in the volume of the sample may be specified by a first group consisting of 50, 100, 200 and 300, and / or a second group consisting of 500, 1000, 2000 and 3000. 3 The range of the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample can be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. 3The range of the number of particles having an equivalent circle diameter of 1 μm or more contained in the sample volume may also be defined by a combination of any two values ​​included in the first group. 3 The range of the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume of the sample may also be specified by a combination of any two values ​​included in the values ​​of the second group. For example, it may be 50 to 3,000, 50 to 2,000, 50 to 1,000, 50 to 500, 50 to 300, 50 to 200, 50 to 100, 100 to 3,000, 100 to 2,000, 100 to 1,000, 100 to 500, 100 to 300, 100 to 200, 200 to 3,000, 200 to 3,000, or 200 to 3,000. The number of the plurality of elements may be greater than 0 and less than 2000, greater than 200 and less than 1000, greater than 200 and less than 500, greater than 200 and less than 300, greater than 300 and less than 3000, greater than 300 and less than 2000, greater than 300 and less than 1000, greater than 300 and less than 500, greater than 500 and less than 3000, greater than 500 and less than 2000, greater than 500 and less than 1000, greater than 1000 and less than 3000, greater than 1000 and less than 2000, or greater than 2000 and less than 3000.

[0247] As the metal plate 64, a metal plate satisfying the following condition (4) may be used.

[0248] (4) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 20 or less.

[0249] By making the metal plate 64 satisfy the condition (4), it is possible to further suppress the first recess 30 formed on the first surface 64a by the first surface etching process from reaching the second surface 64b, or the resin 69 provided in the first recess 30 from reaching the vicinity of the second surface 64b. Thus, it is possible to suppress the second surface etching process performed from the second surface 64b side from being blocked by the resin 69. Thus, the formation of the reduced through holes 25B and 25C can be further suppressed.

[0250] In conditions (2) and (4), for every 1 mm 3Although the upper limit value of the number of particles having an equivalent circle diameter of 3 μm or more contained in the sample of volume is described as an example, other upper limits may be adopted. 3 The number of particles having an equivalent circular diameter of 3 μm or more contained in the volume sample may be, for example, 50 or less, 40 or less, 30 or less, 20 or less, 15 or less, 10 or less, or 5 or less.

[0251] As the metal plate 64, a metal plate satisfying the following condition (5) may be used.

[0252] (5) Every 1mm 3 The number of particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 20 or less.

[0253] By making the metal plate 64 satisfy the condition (5), it is possible to suppress the flow of the etching liquid from being blocked by the particles, for example. Thus, it is possible to suppress the generation of non-penetrating portions.

[0254] Every 1mm 3 The number of particles having an equivalent circle diameter of 5 μm or more contained in the volume sample may be, for example, 15 or less, 10 or less, 5 or less, or 2 or less. For example, as the metal plate 64, a metal plate satisfying the following condition (6) may be used.

[0255] (6) Every 1mm 3 The number of particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 2 or less.

[0256] As the metal plate 64, a metal plate satisfying the following condition (7) may be used.

[0257] (7) Every 1mm 3 The number of particles having an equivalent circle diameter of 10 μm or more contained in the volume sample is zero.

[0258] The probability of a particle with an equivalent circle diameter of 10 μm or more causing a defective vapor deposition mask is higher than the probability of a particle with an equivalent circle diameter of 5 μm or more causing a defective vapor deposition mask. By making the metal plate 64 satisfy condition (7), the probability of causing defective products can be reduced.

[0259] The above conditions (1) to (7) may represent the configuration of the metal plate 64 after being processed into a vapor deposition mask. Alternatively, the above conditions (1) to (7) may represent the configuration of the metal plate 64 before being processed into a vapor deposition mask. The metal plate 64 includes a sampling portion from which a sample satisfying one or more of the above conditions (1) to (7) can be extracted. The sampling portion includes the first surface 64a and the second surface 64b of the metal plate 64. That is, the sampling portion extends from the first surface 64a to the second surface 64b along the thickness direction of the metal plate 64.

[0260] In this embodiment, one of the problems to be solved is to suppress the particles existing in the main layer of the metal plate 64 from adversely affecting the shape accuracy of the through hole 25 of the vapor deposition mask 20. In order to solve such a problem, it is required to appropriately measure the number and size of particles existing in the entire area of ​​the metal plate 64 including the main layer in the thickness direction. The following describes a method for measuring particles existing in the metal plate 64.

[0261] First, a first sampling step is performed to extract a sample having a predetermined volume from the base material or the metal plate 64. For example, Fig.26 As shown, the metal plate 64 rolled out from the winding body is cut along the thickness direction of the metal plate 64 to obtain a sample 81 having a square shape when viewed from above. The length K1 of one side of the square-shaped sample 81 is, for example, 60 mm. The sample 81 includes the first surface 64a and the second surface 64b of the metal plate 64. Therefore, the sample 81 includes the above-mentioned surface layer and main body layer of the metal plate 64. As a tool for cutting out the sample 81 from the metal plate 64, for example, scissors can be used.

[0262] Next, a second sampling step of cutting out a sample piece 81a from the sample 81 is performed. Fig. 27 As shown, by punching out the sample 81, a plurality of, for example, three, sample pieces 81a are obtained. The sample piece 81a has, for example, a circular shape with a diameter K2 when viewed from above. The diameter K2 is, for example, 20 mm. The sample piece 81a includes the first surface 64a and the second surface 64b of the metal plate 64. Therefore, the sample piece 81a includes the above-mentioned surface layer and main body layer of the metal plate 64. As a tool for cutting out the sample piece 81a from the sample 81 with good reproducibility and good accuracy, for example, a punching device can be used.

[0263] Next, a sample cleaning step is performed to clean the sample piece 81a. This can remove foreign matter attached to the sample piece 81a by the first sampling step and the second sampling step. As a cleaning method, ultrasonic cleaning can be used in which ultrasonic waves are applied to pure water while the sample piece 81a is immersed in pure water.

[0264] Next, a particle extraction step is performed to extract particles from the sample 81. For example, first, a sample dissolution step is performed to dissolve the sample piece 81a taken out from the sample 81 in an aqueous solution. Fig.28 As shown, three sample pieces 81a are put into a container 82 containing 100 ml of an aqueous solution 83, and the sample pieces 81a are dissolved in the aqueous solution 83. As the aqueous solution 83, a solution in which the iron alloy is easily soluble but the particles are hardly soluble is used. For example, as the aqueous solution 83, a 100 ml aqueous solution containing nitric acid is used. In this way, the particles contained in the sample that are hardly soluble in nitric acid can be separated from the iron alloy. The temperature of the aqueous solution 83 is, for example, 50°C. The aqueous solution 83 is prepared by mixing a stock solution containing nitric acid at a concentration of 60% by weight with pure water having the same volume as the stock solution.

[0265] The sample dissolving step may take, for example, 30 minutes. The first 15 minutes may be performed while shaking the aqueous solution 83 by hand or the like, and the next 15 minutes may be performed while leaving the aqueous solution 83 at rest. The sample dissolving step may be performed for more than 30 minutes.

[0266] Next, a filtering process is performed to remove particles from the aqueous solution 83 in which the sample piece 81a is dissolved using a suction filtration device. The suction filtration device has filter paper and a decompression unit for decompressing the space on the downstream side of the filter paper. The filter paper is made of an acid-resistant material, such as Teflon. The filter paper is configured to prevent particles larger than 1 μm from passing through. For example, the coarseness of the filter paper, i.e., the pore size, is 0.45 μm. Therefore, if Fig.29 As shown, particles 64 d and 64 e having a size of at least 1 μm or more remain on the filter paper 84 .

[0267] In the filtering process, first, the aqueous solution 83 in which the sample piece 81a is dissolved is injected from the container 82 onto the filter paper 84 via the tubular member placed on the filter paper 84. Then, a washing process is performed three times to wash the container 82. In the washing process, first, 100 ml of pure water is added to the empty container 82, and then, the pure water is injected from the container 82 onto the filter paper 84 via the tubular member. Then, the space on the downstream side of the filter paper is decompressed using a decompression unit such as a pump.

[0268] Next, a particle drying process is performed to dry the particles 64d and 64e on the filter paper 84. Specifically, after the above-mentioned cylindrical member is removed from the filter paper 84, under the condition that the filter paper 84 is covered from above with a preservative film, a decompression unit such as a pump is used to continuously decompress the space under the filter paper. By configuring a cover such as a preservative film above the filter paper 84 in a manner that does not contact the filter paper 84, it is possible to suppress foreign matter in the ambient atmosphere from adhering to the filter paper 84 during the drying of the particles 64d and 64e on the filter paper 84. The time of the particle drying process is not particularly limited, and is, for example, more than 4 hours and less than 6 hours.

[0269] Next, a preparation process for observing the particles 64d and 64e on the filter paper 84 using a scanning electron microscope (hereinafter also referred to as SEM) is performed. First, the peripheral portion of the filter paper 84 is fixed to the base using a carbon tape or the like. Next, in order to ensure conductivity when observing using the SEM, a platinum film is formed on the filter paper 84 by sputtering. The sputtering time is, for example, 10 seconds. Next, after installing a fixture on the base as needed, the base is installed on the SEM.

[0270] Next, an observation process is performed to observe the particles 64d on the filter paper 84 using the SEM. In the observation process, first, an adjustment process is performed to adjust the observation conditions of the SEM. An identification condition adjustment process is performed to adjust the identification conditions for identifying the particles 64d from the image obtained by the SEM. An observation range setting process is performed to set the observation range of the filter paper 84.

[0271] As the SEM, JSM7800FPRIME manufactured by JEOL Ltd. can be used. The settings of the SEM and the like are as follows.

[0272] Detector: Reflection electron detector LVBED-C

[0273] Observation magnification: 1000 times

[0274] Accelerating voltage: 15 kV

[0275] Working distance: 10mm

[0276] Irradiation current: 15

[0277] Reference Fig.30 and Fig.31 The observation condition adjustment step is described below. In the observation condition adjustment step, the contrast and / or brightness of the SEM is adjusted so that the particles 64 d are more conspicuous than the fibers of the filter paper 84 . Fig.30 This is an example of a SEM image obtained before adjusting the contrast and / or brightness of the SEM. Fig.31 This is an example of an SEM image obtained after adjusting the contrast and / or brightness of the SEM. In the observation condition adjustment process, while confirming the SEM image, the contrast of the SEM is adjusted to an appropriate value within the range of 3000 to 4000, and the brightness of the SEM is adjusted to an appropriate value within the range of 200 to 400. At this time, the contrast and / or brightness of the SEM is adjusted to a degree that a part of the fibers of the filter paper 84 is also visible. In this way, it is possible to suppress a part of the plurality of particles 64d from disappearing from the image.

[0278] Reference Fig.32 and Fig.33The identification condition adjustment process is described. As an analysis device for identifying particles from an image obtained using a SEM, the particle automatic analysis software Particle Phaze Analysis 6.53 version attached to an energy dispersive X-ray spectrometer (hereinafter also referred to as an EDX device) can be used. As an EDX device, an EDX device Octane Elect manufactured by AMETEK can be used.

[0279] In the identification condition adjustment step, the particle analysis software is used to identify the particle 64d in the SEM image. Specifically, the brightness threshold in the particle automatic analysis software is first adjusted. Then, the particle automatic analysis software identifies objects in the image that have a brightness above the threshold and a maximum size of 0.8 μm or more as particles 64d.

[0280] Fig.32 This is an example of an image before adjusting the brightness threshold of the automatic particle analysis software. Fig.33 This is an example of an image in a state after adjusting the brightness threshold of the particle automatic analysis software. The brightness threshold of the particle automatic analysis software can be adjusted within a range of 0 to 255. In the recognition condition adjustment process, the brightness threshold of the particle automatic analysis software is adjusted to, for example, 120 while confirming the image. At this time, the contrast and / or brightness of the SEM is adjusted to a degree that a part of the fibers of the filter paper 84 is also visible. In this way, it is possible to suppress a part of the plurality of particles 64d from disappearing from the image.

[0281] Reference Fig.34 The observation range setting process is described below. Fig.34 In FIG. 8 , a frame marked with a symbol 85 indicates an area of ​​an image 85 that can be obtained by one observation using the SEM. In the observation range setting step, as shown in FIG. Fig.34 As shown in FIG. 1 , the observation range 86 is set as follows: 15 images 85 arranged in the first observation direction A1 are acquired, and 10 images 85 arranged in the second observation direction A2 orthogonal to the first observation direction A1 are acquired. The observation range 86 composed of a plurality of images 85 can be set as follows: Fig.34 The central portion of the filter paper 84 may be included as shown, or the central portion of the filter paper 84 may not be included. Fig.34 In the example shown, the number of images 85 acquired for one filter paper 84 is 150. Images 85 may be acquired in two or more observation ranges 86 for one filter paper 84. For example, 150 images 85 may be acquired in the observation range 86 including the center of the filter paper 84, and 150 images 85 may be acquired in the observation range 86 including the end of the filter paper 84. Thus, it is possible to confirm whether there is a difference in the number of particles 64d detected between the center of the filter paper 84 and the end of the filter paper 84.

[0282] The settings of the automatic particle analysis software are as follows.

[0283] Number of pixels of the image: 1024 (first observation direction A1) × 800 (second observation direction A2)

[0284] Time constant: 1.92μs

[0285] Default (analysis time per particle): 1 second

[0286] Scan mode: Core 50%

[0287] Processing of particles at the image boundary: Identify them as particles

[0288] The size K4 of the image 85 on the filter paper 84 in the first observation direction A1 is 114 μm, and the size K5 of the image 85 on the filter paper 84 in the second observation direction A2 is 89 μm.

[0289] like Fig.34 As shown, a gap is provided between two adjacent images 85 in the first observation direction A1. The size K6 of the gap between two adjacent images 85 in the first observation direction A1 is 1 / 10 of the size K4. Similarly, a gap is provided between two adjacent images 85 in the second observation direction A2. The size K7 of the gap between two adjacent images 85 in the second observation direction A2 is 1 / 10 of the size K5. Thus, it is possible to prevent one particle 64d from being repeatedly detected in a plurality of images 85.

[0290] After the observation condition adjustment step, the identification condition adjustment step, and the observation range setting step are performed, the observation range 86 on the filter paper 84 is observed using the SEM, so that the particles 64 d located in the observation range 86 and having a maximum size of 0.8 μm or more can be detected.

[0291] Next, an analysis process is performed to analyze the detected plurality of particles 64d. Specifically, a composition analysis process is performed to analyze the main components of the particles 64d. In addition, a diameter calculation process is performed to calculate the equivalent circle diameter of the particles 64d. And, based on the results of the analysis process and the results of the composition analysis process, an extraction process is performed to extract particles 64d that contain a predetermined component and have an equivalent circle diameter of 1 μm or more.

[0292] Reference Fig.35 The composition analysis process is described below. Fig.35As shown, at multiple analysis points 87 of the particle 64d, composition analysis using energy dispersive X-ray spectroscopy (hereinafter also referred to as EDX method) is implemented. Composition analysis is performed on all detected particles 64d. As an EDX device for implementing the EDX method, the above-mentioned EDX device Octane Elect manufactured by AMETEK can be used. Composition analysis can be performed on multiple analysis points 87 on one particle 64d at the same time. When the above-mentioned scanning mode is set to "core 50%", the multiple analysis points 87 are determined in a manner distributed over 50% of the area of ​​one particle 64d. When the above-mentioned preset is set to "1 second", the time required for the composition analysis of one particle 64d is 1 second. The average value of the composition analysis data of multiple analysis points 87 is used as the composition data of one particle 64d. By implementing composition analysis, information related to the main components and other components constituting the particle 64d can be obtained.

[0293] Reference Fig.35 The diameter calculation process is described. Fig.35 The particle 64d shown is a collection of pixels having a brightness greater than the threshold, for example, greater than 120. In the diameter calculation step, first, the number Pn of pixels where the particle 64d appears is calculated. Next, the area Ds of the particle 64d when viewed from above is calculated by multiplying the number Pn of pixels by the area Ps of the pixels.

[0294] Ds=Pn×Ps

[0295] Next, assuming that the particle 64d has a perfect circular shape in a plan view, the diameter of the particle 64d is calculated from the area Ds of the particle 64d. The diameter calculated in this way is the equivalent circle diameter Da1 of the particle 64d.

[0296] Da1=2×(Ds / π) 0.5

[0297] The calculation of the equivalent circle diameter is performed for all the detected particles 64d.

[0298] In the diameter calculation process, sometimes one particle 64d is mistakenly identified as two or more particles 64d and the equivalent circle diameter Da1 is calculated. It is preferable to manually confirm whether such erroneous data exists. In the case of erroneous data, it is preferable to manually recalculate the equivalent circle diameter Da1 and analyze the composition of the erroneously identified particle 64d. For example, all the components of multiple analysis points 87 in the composition analysis results obtained by analyzing two or more particles 64d are added together, and then manually corrected so that the total value of the weight % of each component is 100.

[0299] The extraction process is described. In the extraction process, first, the first exclusion process is performed to exclude particles 64d having a carbon and fluorine content of 80% by weight or more in the detected particles 64d. This can prevent objects from being identified as particles 64d from the filter paper 84. "Exclusion" means excluding objects from the determination of whether the above-mentioned conditions (1), (2), etc. are met.

[0300] Next, the second exclusion process is performed to exclude particles 64d having an iron content of 10% or more from among the plurality of particles 64d that have not been excluded in the first exclusion process. Next, the third exclusion process is performed to exclude particles 64d having an iron content greater than the total content of aluminum, magnesium, silicon, phosphorus, sulfur, chromium, and zirconium from among the plurality of particles 64d that have not been excluded in the first exclusion process and the second exclusion process. Next, the fourth exclusion process is performed to exclude particles 64d having an equivalent circle diameter of less than 1 μm from among the plurality of particles 64d that have not been excluded in the first exclusion process, the second exclusion process, and the third exclusion process. Then, information such as the number, equivalent circle diameter, and composition of the particles 64d that have not been excluded is sorted out.

[0301] When there are 100 or more particles 64d having an iron content of 10% by weight or more, or when the number of particles 64d having an iron content of 10% by weight or more relative to the number of all particles 64d is 50% or more, it is expected that the sample is not sufficiently dissolved in the above-mentioned sample dissolving step. In this case, it is preferable to re-perform the method of measuring the particles present in the metal plate 64 from the above-mentioned first sampling step.

[0302] Next, a conversion step is performed to calculate the number of particles 64d per 1 mm based on the information on the number Z1 of particles 64d having an equivalent circle diameter of 1 μm or more obtained in the extraction step. 3 The number Z2 of particles 64d contained in the sample 81 of volume is calculated based on the following formula (1) in the conversion process: 3 The number Z2 of particles 64d having an equivalent circle diameter of 1 μm or more contained in the volume sample 81.

[0303] Z2 = Z1 × (effective area of ​​filter paper 84 / area of ​​observation range of SEM) × (1 / dissolved volume)

[0304] The effective area of ​​the filter paper 84 = (R / 2) 2 ×π

[0305] The area of ​​the observation range of the SEM = the area of ​​the image 85 × the number of images 85

[0306] Dissolved volume = (K2 / 2) 2 ×π×thickness of the metal plate 64×number of sample pieces 81a

[0307] R is the diameter of the cylindrical member placed on the filter paper 84 during the filtration process. When R is 15 mm, the effective area of ​​the filter paper 84 is 176.715 mm 2 .

[0308] When the size K4 of the image 85 in the first observation direction A1 is 114 μm, the size K5 of the image 85 in the second observation direction A2 is 89 μm, and the number of images 85 in the observation range 86 of the SEM is 150, the area of ​​the observation range of the SEM is 1.5219 mm 2 .

[0309] When the thickness of the metal plate 64 is 20 μm, the diameter K2 of the sample piece 81 a is 20 mm, and the number of the sample pieces 81 a is 3, the dissolved volume is 18.850 mm 3 .

[0310] Thus, regarding the particles 64d having an equivalent circle diameter of 1 μm or more, it is possible to obtain 3 Information such as the number Z2, equivalent circle diameter, and composition of particles 64d contained in the volume sample 81.

[0311] The particle 64d having an equivalent circle diameter of 1 μm or more may be circular in a plan view. “The particle 64d is circular” means that the aspect ratio of the particle 64d is 2.5 or less. The aspect ratio of the particle 64d is calculated by the following formula.

[0312] Aspect ratio = π × (LP / 2) 2 / Ds

[0313] LP is the longest diameter of the particle 64d, also known as the long axis diameter (Longest Projection). Ds is the area of ​​the particle 64d as described above. The aspect ratio, the long axis diameter LP and the area Ds are all calculated by analyzing the particle 64d using the particle automatic analysis software Particle Phaze Analysis 6.53 version manufactured by AMETEK.

[0314] In the following description, the ratio of the number of particles 64d having an aspect ratio of 2.5 or less to the total number of particles 64d having an equivalent circle diameter of 1 μm or more is also referred to as a circular ratio. The circular ratio may be, for example, 70% or more, 80% or more, 90% or more, or 95% or more.

[0315] Next, a method for manufacturing a metal plate 64 that satisfies at least the above conditions (1) and (2) is described. In the present embodiment, an example is described in which the metal plate is made of a rolled material of an iron alloy containing nickel. The total content of nickel and cobalt in the rolled material is 30 mass % or more and 38 mass % or less.

[0316] First, a preparation step is performed to prepare a base material having an iron alloy containing at least nickel. In the present embodiment, the base material is a member that becomes the above-mentioned metal plate 64 by being rolled. The preparation step includes at least a first melting step.

[0317] First, prepare iron, nickel and other raw materials. For example, prepare each raw material in such a manner that the ratio of iron to all raw materials and the ratio of nickel to all raw materials are approximately 64 weight % and approximately 36 weight %, respectively. Then, after crushing each raw material as needed, implement the first melting step of melting each raw material in a melting furnace. The first melting step includes, for example, vacuum melting. Vacuum melting is a method of obtaining molten metal by melting raw materials in a vacuum atmosphere. For example, the raw materials can be melted in a vacuum atmosphere by gas discharge such as arc discharge. The raw materials can be melted in an induction furnace set to a vacuum atmosphere. The vacuum atmosphere is, for example, below 1 Pa, or below 0.1 Pa. Then, the molten metal is solidified to obtain the first ingot.

[0318] The temperature during melting is set according to the raw materials, for example, above 1500°C. The first melting step may also include a step of adding additives such as aluminum, manganese, and silicon into the melting furnace. The additives can achieve functions such as deoxidation, dehydration, and denitrification. The melting step may also be carried out under a low pressure state lower than atmospheric pressure and in an atmosphere of an inert gas such as argon. The additives form compounds by reacting with oxygen and the like. Such compounds may constitute the above-mentioned particles. Therefore, by adjusting the amount of the additive, the amount or size of the particles contained in the metal plate can be adjusted. For example, by reducing the amount of the additive, the amount of particles contained in the metal plate can be reduced. Alternatively, by reducing the amount of the additive, the equivalent circle diameter of the particles contained in the metal plate can be reduced.

[0319] Fig.36 2 is a cross-sectional view showing the surface of the first ingot 64i taken out from the melting furnace and its surroundings in an enlarged manner. Fig.36 As shown, particles 64d containing additives such as aluminum are likely to exist on the surface and around the first ingot 64i. The reason is considered to be that the specific gravity of the particles 64d is smaller than that of the molten metal. However, the reason why the particles 64d are likely to exist on the surface and around is not limited to the above reason.

[0320] The time of the first melting step is preferably set so that the particles 64d can move to the surface or its periphery.

[0321] In order to remove the particles 64d, after the first melting step, Fig.37 As shown, a first surface treatment process of removing the surface portion 64s of the first ingot 64i can be performed. Symbol X1 represents the thickness of the removed surface portion 64s. By removing the surface portion 64s, the number and density of particles 64d contained in the metal plate 64 can be reduced. In addition, the film of oxides such as oxide scale can be removed. As described later, the number and density of particles 64d contained in the metal plate 64 can also be reduced by a metal plate surface treatment process of removing the surface portion 64u of the metal plate 64.

[0322] The thickness X2 of the first ingot 64i before removing the surface portion 64s may be, for example, greater than 100 mm, greater than 150 mm, or greater than 200 mm. The thickness X2 may be, for example, less than 300 mm, less than 400 mm, or less than 500 mm. The range of the thickness X2 may be specified by the first group consisting of 100 mm, 150 mm, and 200 mm, and / or the second group consisting of 300 mm, 400 mm, and 500 mm. The range of the thickness X2 may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness X2 may also be specified by a combination of any two of the values ​​included in the first group. The range of the thickness X2 may also be specified by a combination of any two of the values ​​included in the second group. For example, it can be between 100 mm and 500 mm, between 100 mm and 400 mm, between 100 mm and 300 mm, between 100 mm and 200 mm, between 100 mm and 150 mm, between 150 mm and 500 mm, between 150 mm and 400 mm, between 150 mm and 300 mm, between 150 mm and 200 mm, between 200 mm and 500 mm, between 200 mm and 400 mm, between 200 mm and 300 mm, between 300 mm and 500 mm, between 300 mm and 400 mm, or between 400 mm and 500 mm.

[0323] The thickness X1 of the removed surface portion 64s may be, for example, 5 mm or more, 10 mm or more, 12 mm or more, or 15 mm or more. The thickness X1 may be, for example, 20 mm or less, 25 mm or less, 30 mm or less, or 40 mm or less. The range of the thickness X1 may be defined by the first group consisting of 5 mm, 10 mm, 12 mm, and 15 mm, and / or the second group consisting of 20 mm, 25 mm, 30 mm, and 40 mm. The range of the thickness X1 may be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness X1 may also be defined by a combination of any two of the values ​​included in the first group. The range of the thickness X1 may also be defined by a combination of any two of the values ​​included in the second group. For example, it can be between 5 mm and 40 mm, between 5 mm and 30 mm, between 5 mm and 25 mm, between 5 mm and 20 mm, between 5 mm and 15 mm, between 5 mm and 12 mm, between 5 mm and 10 mm, between 10 mm and 40 mm, between 10 mm and 30 mm, between 10 mm and 25 mm, between 10 mm and 20 mm, between 10 mm and 15 mm, between 10 mm and 12 mm, between 12 mm and 40 mm. It can be above 12mm and below 30mm, it can be above 12mm and below 25mm, it can be above 12mm and below 20mm, it can be above 12mm and below 15mm, it can be above 15mm and below 40mm, it can be above 15mm and below 30mm, it can be above 15mm and below 25mm, it can be above 15mm and below 20mm, it can be above 20mm and below 40mm, it can be above 20mm and below 30mm, it can be above 20mm and below 25mm, it can be above 25mm and below 40mm, it can be above 25mm and below 30mm, or it can be above 30mm and below 40mm.

[0324] By making the thickness X1 greater than or equal to 5 mm, the number and density of the particles 64d contained in the metal plate 64 can be reduced. The larger the range X1, the smaller the number of particles 64d. On the other hand, the larger the range X1, the smaller the amount of the obtained metal plate 64. By making the range X1 less than or equal to 40 mm, the increase in the manufacturing cost of the metal plate 64 can be suppressed.

[0325] The thickness X1 of the surface portion 64s can be determined based on the ratio to the thickness X2 of the first ingot 64i before the surface portion 64s is removed. X1 / X2 can be, for example, greater than 0.01, greater than 0.02, greater than 0.03, or greater than 0.05. X1 / X2 can be, for example, less than 0.10, less than 0.15, less than 0.20, or less than 0.30. The range of X1 / X2 can be defined by the first group consisting of 0.01, 0.02, 0.03, and 0.05, and / or the second group consisting of 0.10, 0.15, 0.20, and 0.30. The range of X1 / X2 can be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of X1 / X2 can also be defined by a combination of any two of the values ​​included in the first group. The range of X1 / X2 can also be specified by a combination of any two values ​​included in the above-mentioned second group. For example, it can be 0.01 to 0.30, 0.01 to 0.20, 0.01 to 0.15, 0.01 to 0.10, 0.01 to 0.05, 0.01 to 0.03, 0.01 to 0.02, 0.02 to 0.30, 0.02 to 0.20, 0.02 to 0.15, 0.02 to 0.10, 0.02 to 0.05, 0.02 to 0.03, 0.03 to 0.30 , can be above 0.03 and below 0.20, can be above 0.03 and below 0.15, can be above 0.03 and below 0.10, can be above 0.03 and below 0.05, can be above 0.05 and below 0.30, can be above 0.05 and below 0.20, can be above 0.05 and below 0.15, can be above 0.05 and below 0.10, can be above 0.10 and below 0.30, can be above 0.10 and below 0.20, can be above 0.10 and below 0.15, can be above 0.15 and below 0.30, can be above 0.15 and below 0.20, and can be above 0.20 and below 0.30.

[0326] The particles 64d having a large equivalent circle diameter are more likely to exist near the surface of the metal plate 64 than the particles 64d having a small equivalent circle diameter. The reason for this is considered to be that the larger the equivalent circle diameter of the particles 64d, the faster the particles 64d move upward during the melting process. However, the reason why the particles 64d having a large equivalent circle diameter are more likely to exist on the surface is not limited to the above reason.

[0327] In the case where particles 64d having a large equivalent circular diameter tend to exist on the surface, the process of removing the surface portion 64s can be particularly helpful in reducing the number and density of particles 64d having a large equivalent circular diameter. Therefore, by adjusting the thickness X1 of the surface portion 64s, it is possible to adjust the first ratio, the second ratio, and the third ratio of particles 64d contained in the metal plate 641. Similarly, by adjusting the thickness X3 of the surface portion 64u described later, it is possible to adjust the first ratio, the second ratio, and the third ratio of particles 64d contained in the metal plate 64. The first ratio refers to the ratio of the first number to the total number of particles having an equivalent circular diameter of 1 μm or more. The first number refers to the number of particles per 1 mm. 3 The second ratio refers to the ratio of the second number to the total number of particles having an equivalent circle diameter of 1 μm or more and less than 3 μm contained in the sample 81 of the volume. The second number refers to the ratio of the second number to the total number of particles having an equivalent circle diameter of 1 μm or more. 3 The third ratio refers to the ratio of the third number to the total number of particles having an equivalent circle diameter of 1 μm or more. The third number refers to the number of particles per 1 mm 3 The total number is the number of particles with an equivalent circle diameter of 5 μm or more contained in the sample 81 per volume. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume sample 81. The second ratio and the third ratio may be reduced by the process of removing the surface portions 64 s and 64 u.

[0328] On the other hand, as shown in the embodiment described later, the second ratio and the third ratio of the metal plates showing a small total number, such as a total number less than 100, may be higher than the second ratio and the third ratio of the metal plates showing a large total number, such as a total number of more than 100. In other words, the first ratio of the metal plates showing a small total number may be lower than the first ratio of the metal plates showing a large total number. For example, please refer to Fig.48 Results of the 7th and 8th masks are shown.

[0329] It is assumed that a small total amount is achieved by increasing the range X1. The results of the embodiment suggest that when the range X1 exceeds a certain value, there is a possibility that the first ratio decreases as the range X1 becomes larger. In other words, a decrease in the first ratio may indicate that too much ingot or metal plate is removed. The first ratio can be one of the useful indicators.

[0330] The first ratio of the metal plate may be, for example, 70% or more, 80% or more, or 90% or more. The first ratio of the metal plate may be, for example, 95% or less, 98% or less, or 100% or less. The range of the first ratio of the metal plate may be specified by the first group consisting of 70%, 80% and 90%, and / or the second group consisting of 95%, 98% and 100%. The range of the first ratio of the metal plate may be specified by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first ratio of the metal plate may also be specified by a combination of any two of the values ​​included in the first group. The range of the first ratio of the metal plate may also be specified by a combination of any two of the values ​​included in the second group. For example, it may be from 70% to 100%, from 70% to 98%, from 70% to 95%, from 70% to 90%, from 70% to 80%, from 80% to 100%, from 80% to 98%, from 80% to 95%, from 80% to 90%, from 90% to 90%, from 90% to 100%, from 90% to 98%, from 90% to 95%, from 95% to 100%, from 95% to 98%, or from 98% to 100%.

[0331] The specific method for removing the surface portion 64s is not particularly limited, and the so-called grinding method in which a grinding wheel is rotated to cut the surface of the first ingot 64i; the so-called pressing method in which the first ingot 64i is pressed into a cutting tool to cut the surface of the first ingot 64i; and the like can be adopted. The surface portion 64s can also be removed by bringing a surface treatment liquid into contact with the surface of the first ingot 64i. The surface treatment liquid is, for example, an acidic solution such as a sulfuric acid solution or an aqueous sulfuric acid-hydrogen peroxide solution. An aqueous sulfuric acid-hydrogen peroxide solution is a solution containing sulfuric acid and hydrogen peroxide. The first surface treatment step may include only one of a treatment of cutting the surface of the first ingot 64i and a treatment of bringing the surface treatment liquid into contact with the surface of the first ingot 64i, or may include both. The first surface treatment step may be implemented in a manner that makes the thickness of the first ingot 64i uniform.

[0332] Next, the process of melting the ingot from which the surface portion has been removed again in the melting furnace may be repeated a predetermined number of times. For example, a second melting process of melting the first ingot in the melting furnace to obtain a second ingot may be further performed. In addition, a third melting process of melting the second ingot in the melting furnace to obtain a third ingot may be further performed. The melting process may be repeated four or more times. In addition, between the melting processes, a surface treatment process of removing the surface portion of the ingot may be performed. For example, after the second melting process, a second surface treatment process of removing the surface portion of the second ingot may be performed. After the third melting process, a third surface treatment process of removing the surface portion of the third ingot may be performed. By repeatedly performing the melting process and the surface treatment process, the number and density of the particles 64d contained in the metal plate 64 can be further reduced.

[0333] By adjusting the number of times of the melting process and the surface treatment process, the amount or size of the particles contained in the metal plate can be adjusted. For example, by increasing the number of times of the melting process and the surface treatment process, the amount of particles contained in the metal plate can be reduced. Alternatively, by increasing the number of times of the melting process and the surface treatment process, the equivalent circle diameter of the particles contained in the metal plate can be reduced.

[0334] The thickness of the surface portion removed from the ingot in the second surface treatment step and the third surface treatment step may be the same as or different from that in the first surface treatment step. The numerical range of the thickness of the surface portion removed in the second surface treatment step may be the same as or different from the numerical range of the thickness X1 described above. The numerical range of the thickness of the surface portion removed in the third surface treatment step may be the same as or different from the numerical range of the thickness X1 described above.

[0335] The steps of removing the surface portion of the ingot such as the first surface treatment step, the second surface treatment step, and the third surface treatment step are also referred to as “base material surface treatment steps”.

[0336] The melting method in the second melting step, the third melting step, and the subsequent melting steps may be the same as or different from the melting method in the first melting step. For example, vacuum arc melting, electroslag casting, etc. may be used. The second melting step and the third melting step are preferably performed in a vacuum atmosphere.

[0337] The lower the pressure of the atmosphere in the melting process, the faster the particles 64d move upward in the melting process. Therefore, by adjusting the pressure of the atmosphere, it is possible to adjust the amount or size of the particles contained in the metal plate. For example, by reducing the pressure of the atmosphere, the amount of particles contained in the metal plate can be reduced. Alternatively, by reducing the pressure of the atmosphere, the equivalent circle diameter of the particles contained in the metal plate can be reduced.

[0338] It is also preferable that the time of the second melting step, the third melting step, and the subsequent melting steps be set so that the particles 64 d can move to the surface or its periphery.

[0339] Then, if Fig.38 As shown, a rolling process is performed to roll the base material 60 composed of the ingot obtained by the melting process and the base material surface treatment process. For example, the base material 60 is conveyed while applying tensile tension in the direction indicated by the arrow D1 toward a rolling device 66 including a pair of rollers (working rollers) 66a and 66b. The base material 60 that arrives between the pair of rollers 66a and 66b is rolled by the pair of rollers 66a and 66b, and as a result, the thickness of the base material 60 is reduced and stretched in the conveying direction. Thus, a metal plate 64 extending in the direction D1 and having a specified thickness can be obtained. In the following description, the direction D1 in which the metal plate 64 extends is also referred to as the length direction D1. When the metal plate 64 is produced by rolling, rolling stripes extending in the length direction D1 are formed on the surface of the metal plate 64. As shown in FIG. Fig.38 As shown, the wound body 62 may also be formed by winding the metal plate 64 around the core 61 .

[0340] Fig.38 The rolling process is merely an overview, and the specific structure and procedure for implementing the rolling process are not particularly limited. For example, the rolling process may include: a hot rolling process for processing the base material 60 at a temperature above the temperature at which the crystal arrangement of the iron alloy constituting the base material 60 changes, and a cold rolling process for processing the base material at a temperature below the temperature at which the crystal arrangement of the iron alloy changes. In addition, the orientation of the base material 60 and the metal plate 64 when passing between the pair of rollers 66a and 66b is not limited to one direction. For example, Fig.38 In the process, the base material 60 and the metal plate 64 can also be repeatedly passed between a pair of rollers 66a and 66b in the direction from the left side to the right side of the paper and from the right side to the left side of the paper, thereby gradually rolling the base material 60 and the metal plate 64.

[0341] In the rolling process, the pressure of the rolling actuator may be adjusted to adjust the shape of the metal plate 64. In addition, the shape of the backup rolls may be adjusted as appropriate in addition to the rolls (work rolls) 66a and 66b.

[0342] In the cold rolling process, a coolant such as kerosene may be supplied between the base material 60 and the rollers 66a and 66b. This allows the temperature of the base material to be controlled.

[0343] Before or after the rolling process or between the rolling processes, an analysis process for analyzing the quality or characteristics of the base material 60 or the metal plate 64 may be performed. For example, the composition may be analyzed by irradiating the base material 60 or the metal plate 64 with fluorescent X-rays. The thermal expansion and contraction rate of the base material 60 or the metal plate 64 may also be measured by thermomechanical analysis (TMA: Thermomechanical Analisys).

[0344] Before the rolling process or between the hot rolling process and the cold rolling process, a metal plate surface treatment process for removing the surface portion of the metal plate 64 can be implemented. As a result, the number and density of particles 64d contained in the metal plate 64 can be reduced. In addition, the film of oxides such as oxide scale can be removed. The metal plate surface treatment process can also be implemented before the rolling process and between the hot rolling process and the cold rolling process.

[0345] Fig.60 This is a cross-sectional view showing the surface of the metal plate 64 and its surroundings in an enlarged manner before the surface portion 64u is removed. Fig.61 It is a cross-sectional view showing the surface of the metal plate 64 and its surroundings after the surface portion 64u is removed in an enlarged manner. Symbol X3 represents the thickness of the removed surface portion 64u. Symbol X4 represents the thickness of the metal plate 64 before the surface portion 64u is removed. The specific method for removing the surface portion 64u is not particularly limited. For example, the surface portion 64u can be removed by bringing the surface treatment liquid into contact with the surface of the metal plate 64. The surface treatment liquid is the same as in the case of the parent material surface treatment process, for example, an acidic solution such as a sulfuric acid solution, a sulfuric acid-hydrogen peroxide aqueous solution. In the case of implementing the metal plate surface treatment process before the rolling process, the surface portion 64u can be removed by cutting the surface of the metal plate 64, as in the case of the parent material surface treatment process. The metal plate surface treatment process may include only one of the treatment of bringing the surface treatment liquid into contact with the surface of the metal plate 64 and the treatment of cutting the surface of the metal plate 64, or may include both.

[0346] The thickness X3 of the surface portion 64u removed by the metal plate surface treatment process can be, for example, 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness X3 can be, for example, 30 μm or less, 50 μm or less, 70 μm or less, or 100 μm or less. The range of the thickness X3 can be defined by the first group consisting of 5 μm, 10 μm, 15 μm, and 20 μm, and / or the second group consisting of 30 μm, 50 μm, 70 μm, and 100 μm. The range of the thickness X3 can be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness X3 can also be defined by a combination of any two of the values ​​included in the first group. The range of the thickness X3 can also be defined by a combination of any two of the values ​​included in the second group. For example, it can be 5 μm to 100 μm, 5 μm to 70 μm, 5 μm to 50 μm, 5 μm to 30 μm, 5 μm to 20 μm, 5 μm to 15 μm, 5 μm to 10 μm, 10 μm to 100 μm, 10 μm to 70 μm, 10 μm to 50 μm, 10 μm to 30 μm, 10 μm to 20 μm, 10 μm to 15 μm, 15 μm to 100 μm, or 10 μm to 70 μm. It can be above 15μm and below 70μm, it can be above 15μm and below 50μm, it can be above 15μm and below 30μm, it can be above 15μm and below 20μm, it can be above 20μm and below 100μm, it can be above 20μm and below 70μm, it can be above 20μm and below 50μm, it can be above 20μm and below 30μm, it can be above 30μm and below 100μm, it can be above 30μm and below 70μm, it can be above 30μm and below 50μm, it can be above 50μm and below 100μm, it can be above 50μm and below 70μm, or it can be above 70μm and below 100μm.

[0347] The thickness X3 of the surface portion 64u can be determined based on the ratio to the thickness X4 of the metal plate 64 before the surface portion 64u is removed. X3 / X4 can be, for example, greater than 0.01, greater than 0.02, greater than 0.03, or greater than 0.05. X3 / X4 can be, for example, less than 0.10, less than 0.15, less than 0.20, or less than 0.30. The range of X3 / X4 can be defined by the first group consisting of 0.01, 0.02, 0.03, and 0.05, and / or the second group consisting of 0.10, 0.15, 0.20, and 0.30. The range of X3 / X4 can be defined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of X3 / X4 can also be defined by a combination of any two of the values ​​included in the first group. The range of X3 / X4 can also be specified by a combination of any two values ​​included in the above-mentioned second group. For example, it can be 0.01 to 0.30, 0.01 to 0.20, 0.01 to 0.15, 0.01 to 0.10, 0.01 to 0.05, 0.01 to 0.03, 0.01 to 0.02, 0.02 to 0.30, 0.02 to 0.20, 0.02 to 0.15, 0.02 to 0.10, 0.02 to 0.05, 0.02 to 0.03, 0.03 to 0.30 , can be above 0.03 and below 0.20, can be above 0.03 and below 0.15, can be above 0.03 and below 0.10, can be above 0.03 and below 0.05, can be above 0.05 and below 0.30, can be above 0.05 and below 0.20, can be above 0.05 and below 0.15, can be above 0.05 and below 0.10, can be above 0.10 and below 0.30, can be above 0.10 and below 0.20, can be above 0.10 and below 0.15, can be above 0.15 and below 0.30, can be above 0.15 and below 0.20, and can be above 0.20 and below 0.30.

[0348] In the case of using a surface treatment liquid, the thickness X3 of the surface portion 64u to be removed may be smaller than the above-mentioned thickness. For example, the thickness X3 may be greater than 0.5 μm, greater than 1.0 μm, greater than 2.0 μm, or greater than 3.0 μm. In the case of a treatment in which the surface treatment liquid is brought into contact with the surface of the base material, the thickness X1 of the surface portion 64s to be removed may also be smaller than the above-mentioned thickness. For example, the thickness X1 may be greater than 0.5 μm, greater than 1.0 μm, greater than 2.0 μm, or greater than 3.0 μm.

[0349] Then, in order to eliminate the residual stress accumulated in the metal plate 64 due to rolling, Fig.39 As shown, the metal plate 64 can be annealed using an annealing device 67. Fig.39 As shown, the annealing process can be performed while the metal plate 64 is pulled in the conveying direction (length direction). That is, the annealing process can be performed in the form of continuous annealing while conveying rather than so-called intermittent annealing. In this case, it is preferable to set the temperature and conveying speed in a manner that suppresses deformation such as buckling and breaking of the metal plate 64. By performing the annealing process, the metal plate 64 with residual strain removed to a certain extent can be obtained. Fig.39 , an example is shown in which the metal plate 64 is conveyed in the horizontal direction during the annealing process, but the present invention is not limited thereto, and the metal plate 64 may be conveyed in other directions such as the vertical direction during the annealing process.

[0350] Then, a splitting process may be performed to cut off both ends of the metal plate 64 obtained by the rolling process in the width direction within a predetermined range, so that the width of the metal plate 64 is within the predetermined range. This splitting process is performed to remove cracks that may be generated at both ends of the metal plate 64 due to rolling. By performing such a splitting process, the phenomenon of the metal plate 64 breaking, that is, the phenomenon of the plate breaking starting from the cracks, can be prevented.

[0351] The width of the portion cut off in the trimming step may be adjusted so that the shape of the metal plate 64 after the trimming step becomes bilaterally symmetrical in the width direction. The trimming step may be performed before the annealing step.

[0352] By repeating at least two of the above-mentioned rolling step, annealing step, and trimming step a plurality of times, a long metal plate 64 having a predetermined thickness can be manufactured.

[0353] After the rolling process, the annealing process or the trimming process, an inspection process may be performed to inspect the density and size of the particles 64d contained in the metal plate 64. In the inspection process, the above-mentioned observation process and analysis process are performed to obtain the density and size of the particles 64d per 1 mm. 3Information such as the number Z2 of particles 64d having an equivalent circle diameter of 1 μm or more contained in the volume sample 81, the equivalent circle diameter, and the composition.

[0354] Next, a determination step may be performed to determine whether the metal plate 64 from which the sample 81 is taken out is a good product. For example, when the above conditions (1) and (2) are satisfied, the metal plate 64 from which the sample 81 is taken out is determined to be a good product.

[0355] In the determination process, a metal plate 64 that satisfies the above conditions (3) and (4) in addition to the above conditions (1) and (2) may be determined as a qualified product. In the determination process, the above conditions (1) to (4) may be arbitrarily combined. For example, a metal plate 64 that satisfies all the determination conditions (1) to (4) may be determined as a qualified product, or a metal plate 64 that satisfies only a part of the determination conditions (1) to (4) may be determined as a qualified product. Examples of combinations are shown below.

[0356] Example 1: The metal plate 64 satisfying the condition (1) is determined to be a non-defective product.

[0357] Example 2: The metal plate 64 satisfying condition (2) is determined to be a non-defective product.

[0358] Example 3: A metal plate 64 satisfying conditions (1) and (3) is determined to be a conforming product.

[0359] Example 4: A metal plate 64 satisfying conditions (2) and (4) is determined to be a conforming product.

[0360] Example 5: A metal plate 64 satisfying conditions (1) and (2) is determined to be a conforming product.

[0361] Example 6: A metal plate 64 satisfying conditions (1), (2), and (3) is determined to be a conforming product.

[0362] Example 7: A metal plate 64 satisfying conditions (1), (2), and (4) is determined to be a conforming product.

[0363] Example 8: A metal plate 64 satisfying conditions (1), (2), (3), and (4) is judged as a conforming product.

[0364] In the determination process, a metal plate 64 that further satisfies the above conditions (5), (6), (7), etc. in addition to the conditions shown in Examples 1 to 8 may be determined as a qualified product. For example, a metal plate 64 that further satisfies the above condition (5) in addition to the conditions shown in Examples 1 to 8 may be determined as a qualified product. For example, a metal plate 64 that further satisfies the above condition (6) in addition to the conditions shown in Examples 1 to 8 may be determined as a qualified product. For example, a metal plate 64 that further satisfies the above conditions (5) and (7) in addition to the conditions shown in Examples 1 to 8 may be determined as a qualified product. For example, a metal plate 64 that further satisfies the above conditions (6) and (7) in addition to the conditions shown in Examples 1 to 8 may be determined as a qualified product. The following Examples 1A to 1D are examples of determining that a metal plate 64 that further satisfies one or two of the above conditions (5), (6), and (7) in addition to the conditions shown in Example 1 is a qualified product.

[0365] Example 1A: The metal plate 64 satisfying the conditions (1) and (5) is determined to be a non-defective product.

[0366] Example 1B: The metal plate 64 satisfying the conditions (1) and (6) is determined to be a non-defective product.

[0367] Example 1C: The metal plate 64 satisfying the conditions (1), (5), and (7) is determined to be a conforming product.

[0368] Example 1D: The metal plate 64 satisfying the conditions (1), (6), and (7) is judged as a non-defective product.

[0369] In the above description, an example is shown in which the inspection process is performed to inspect the metal plate 64 based on the number, size, composition, etc. of the particles 64d in order to determine whether the metal plate 64 is acceptable, that is, to screen the metal plate 64. That is, an example is shown in which the inspection process functions as a screening process for screening the metal plate 64 in the method for manufacturing the metal plate 64. However, the inspection process may be used for purposes other than screening the metal plate 64 in the method for manufacturing the metal plate 64.

[0370] An example of using the inspection process for purposes other than screening of the metal plate 64 in the method for manufacturing the metal plate 64 will be described. For example, the inspection of the metal plate 64 based on the number, size, composition, etc. of the particles 64d can be used to optimize the conditions of the processes for manufacturing the base material, such as the melting process for melting the raw material in the melting furnace, the surface treatment process, or the rolling process, the metal plate surface treatment process, the annealing process, etc., or the conditions of the processes for manufacturing the metal plate 64.

[0371] For example, first, the metal plate 64 is manufactured under various conditions, and the number and size of the particles 64d contained in the sample 81 taken out from the metal plate 64 are calculated. And the manufacturing conditions of the metal plate 64 are compared with the number and size of the particles 64d contained in the sample 81 taken out from the obtained metal plate 64. Thus, the conditions for manufacturing the metal plate 64 that meets the above-mentioned determination conditions with a high probability can be found. In this way, the inspection of the metal plate 64 based on the number and size of the particles 64d can be used to find suitable manufacturing conditions. In this case, it is not necessary to implement the inspection process of calculating the number and size of the particles 64d for all the metal plates 64 obtained in the actual manufacturing process. For example, the inspection process can be implemented only for a part of the metal plates 64. Alternatively, once the manufacturing conditions are set, the inspection process of calculating the number and size of the particles 64d can be completely omitted.

[0372] (Appearance inspection process)

[0373] After the rolling process or the annealing process, an appearance inspection process may be performed to inspect the appearance of the metal plate 64. The appearance inspection process may include a process of using an automatic inspection machine to inspect the appearance of the metal plate 64. The appearance inspection process may also include a process of visually inspecting the appearance of the metal plate 64.

[0374] (Shape inspection process)

[0375] After the rolling process or the annealing process, a shape inspection process may be performed to inspect the shape of the metal plate 64. For example, the position of the surface of the metal plate 64 in the thickness direction may be measured in a predetermined region of the metal plate 64 using a three-dimensional measuring device.

[0376] Next, the main reference Figure 40 to Figure 43 A method of manufacturing the vapor deposition mask 20 using the metal plate 64 satisfying the above-mentioned determination conditions will be described. Fig.40 1 is a diagram showing a manufacturing apparatus 70 for manufacturing the vapor deposition mask 20 using a metal plate 64. First, a metal plate 64 extending in the longitudinal direction D1 is prepared. The metal plate 64 is prepared, for example, in the form of a winding body 62 in which the metal plate 64 is wound around the core 61 described above. Next, the metal plate 64 is sequentially wound around the core 61. Fig.40 The resist film forming device 71, the exposure / developing device 72, the etching device 73 and the separation device 74 are shown. Fig.40 , an example is shown in which the metal plate 64 is transported between the devices by conveying it in the longitudinal direction D1, but the present invention is not limited thereto. The metal plate 64 may be wound up in a predetermined device and then supplied to a downstream device in the form of a wound body.

[0377] The resist film forming device 71 forms a resist film on the surface of the metal plate 64. The exposure / development device 72 performs exposure processing and development processing on the resist film to pattern the resist film and form a resist pattern.

[0378] The etching device 73 etches the metal plate 64 using the resist pattern as a mask, thereby forming the through holes 25 on the metal plate 64. In the present embodiment, a plurality of through holes 25 corresponding to the plurality of vapor deposition masks 20 are formed on the metal plate 64. In other words, the plurality of vapor deposition masks 20 are distributed on the metal plate 64. For example, the plurality of through holes 25 are formed on the metal plate 64 in the following manner: the plurality of effective areas 22 are arranged along the width direction D2 of the metal plate 64, and the plurality of effective areas 22 for the vapor deposition mask 20 are arranged along the length direction D1 of the metal plate 64.

[0379] The separating device 74 performs a separating step of separating a portion of the metal plate 64 where a plurality of through holes 25 corresponding to one vapor deposition mask 20 are formed from the metal plate 64. In this way, a single vapor deposition mask 20 can be obtained.

[0380] In the manufacturing process of the vapor deposition mask 20, first, a resist film is formed on the surface of the metal plate 64 using the resist film forming device 71. Then, the resist films 65a and 65b are exposed and developed using the exposure / development device 72. Fig.41 As shown, the first resist pattern 65 c can be formed on the first surface 64 a of the metal plate 64 , and the second resist pattern 65 d can be formed on the second surface 64 b of the metal plate 64 .

[0381] Next, the metal plate 64 is etched using the etching device 73 using the resist patterns 65c and 65d as masks. Fig.42 As shown in FIG. 1 , the first recess 30 is formed by etching the area of ​​the first surface 64a of the metal plate 64 that is not covered by the first resist pattern 65c using the first etching solution. Next, the first recess 30 is covered with the resin 69. Then, as shown in FIG. Fig.43 As shown, the second recess 35 is formed on the second surface 64b by etching the area not covered by the second resist pattern 65d in the second surface 64b of the metal plate 64. Then, the resin 69 and the resist patterns 65c and 65d are removed from the metal plate 64.

[0382] Then, the plurality of vapor deposition masks 20 distributed on the metal plate 64 are taken out one by one. For example, the portion of the metal plate 64 where the plurality of through holes 25 corresponding to one vapor deposition mask 20 are formed is separated from the other portion of the metal plate 64. In this way, the vapor deposition masks 20 can be obtained.

[0383] Next, an inspection process is performed to check whether the deviation of the area of ​​the through hole 25 formed on the metal plate 64 from the reference value is below a predetermined allowable value. The reference value and the allowable value are set based on the pixel density of the display device manufactured using the vapor deposition mask 20, the average value of the size of the through hole 25, etc. For example, in the case of the vapor deposition mask 20 used to manufacture a WQHD (widescreen high definition) display device, the allowable value is 5 μm. 2 Above and 400μm 2 In the case of the vapor deposition mask 20 in which the average value of the equivalent circle diameter of the through-holes 25 is 30 μm±3 μm, the allowable value is 5 μm. 2 Above and 150μm 2 In the through-hole inspection process, if the vapor deposition mask 20 includes even one through-hole 25 whose area deviates from the reference value by more than the allowable value, the vapor deposition mask 20 is excluded as a defective product.

[0384] As a method for measuring the area of ​​the through hole 25, a method using light passing through the through hole 25 can be used. Specifically, parallel light is incident on one of the first surface 20a or the second surface 20b of the vapor deposition mask 20 along the normal direction of the metal plate 64, and is transmitted through the through hole 25 and emitted from the other of the first surface 20a or the second surface 20b. Then, the area of ​​the region occupied by the emitted light in the surface direction of the metal plate 64 is measured as the area of ​​the through hole 25. In this case, the contour of the through portion 42 of the through hole 25 with the smallest opening area in the top view determines the area of ​​the region occupied by the light emitted from the vapor deposition mask 20 in the surface direction of the metal plate 64.

[0385] During the etching process of the metal plate 64 to form the through hole 25, if the particles 64d and 64e in the metal plate 64 fall off, as described above, Fig.25 As shown in FIG. 1 , the reduced through holes 25B and 25C may be smaller than the standard through hole 25A, or the enlarged through holes 25D and 25E may be larger than the standard through hole 25A. As a result, the size of the through portion 42 may partially become a size SB or SC smaller than the size SA of the standard through hole 25A, or a size SD or SE larger than the size SA. Such a size deviation may cause the area of ​​the through hole 25 to deviate from the reference value.

[0386] Here, in this embodiment, by using the metal plate 64 satisfying the above conditions (1) and (2), it is possible to suppress the formation of reduced through holes 25B and 25C or enlarged through holes 25D and 25E due to the falling of particles 64d and 64e. Thus, it is possible to suppress the deviation of the area of ​​the through hole 25 from the reference value.

[0387] In the through hole inspection process, the relative value of the area of ​​the through hole 25 may be evaluated on the basis of the evaluation of the absolute value of the area of ​​the through hole 25 as described above, or instead of the evaluation of the absolute value of the area of ​​the through hole 25. For example, when the area of ​​a certain through hole 25 is set as S1 and the average value of the area of ​​two or more through holes 25 surrounding the through hole 25 is set as S2, it is possible to evaluate whether the absolute value of (S1-S2) / S2 is below a predetermined threshold. The threshold in this case is also appropriately set according to the pixel density of the display device manufactured using the vapor deposition mask 20, the average value of the size of the through hole 25, and the like.

[0388] In the present embodiment, by using the metal plate 64 that satisfies the above conditions (1) and (2), it is possible to suppress the absolute value of (S1-S2) / S2 from exceeding a predetermined threshold value.

[0389] In the case where the vapor deposition mask 20 is manufactured using a metal plate 64 that satisfies the above conditions (1) and (2), the vapor deposition mask 20 may also satisfy the above conditions (1) and (2). For example, the portions of the vapor deposition mask 20 such as the end portions 17a, 17b or the peripheral region 23 of the middle portion 18 where the through-holes 25 are not formed and are therefore covered by the resist pattern in the manufacturing process of the vapor deposition mask 20 are not in contact with the etchant in the manufacturing process. Therefore, in the end portions 17a, 17b or the peripheral region 23, the distribution state of the particles 64d in the metal plate 64 before the through-holes 25 are formed can be maintained. In other words, in the portion of the vapor deposition mask 20 that is not in contact with the etchant, the particles 64d in the metal plate 64 do not fall off but remain. Therefore, when the sample 81 taken out from the end portions 17a, 17b or the peripheral region 23 of the vapor deposition mask 20 is dissolved and the particles 64d are analyzed, the same analysis results as those in the case of the metal plate 64 before the through-holes 25 are formed can be obtained. Therefore, by taking out the sample 81 from the edge portions 17 a , 17 b or the surrounding area 23 of the evaporation mask 20 and analyzing it, information on the distribution state of the particles 64 d in the metal plate 64 used to manufacture the evaporation mask 20 can be obtained.

[0390] In this embodiment, as described in the above condition (1), the thickness of each 1 mm of the metal plate 64 is 3The number of particles having an equivalent circle diameter of 1 μm or more and less than 3 μm contained in the volume sample 81 is more than 50. When the particles 64d are exposed on the surface of the metal plate 64, the particles 64d can help to improve the adhesion between the resist films 65a, 65b and the metal plate 64. In addition, the anchoring effect of the particles 64d on the resist films 65a, 65b can also help to improve the adhesion between the resist films 65a, 65b and the metal plate 64. Therefore, it is possible to suppress the peeling of the resist films 65a, 65b of the resist patterns 65c, 65d from the metal plate 64 during the manufacturing process of the vapor deposition mask 20 such as the etching process. As a result, it is easy to use small-sized resist films 65a, 65b. Therefore, it is easy to shorten the arrangement period of the through holes 25 of the vapor deposition mask 20, and it is possible to manufacture a display device with a high pixel density.

[0391] By implementing the above-mentioned base material surface treatment process or metal layer surface treatment process, the number and density of particles 64d contained in the metal plate 64 can be reduced. Therefore, the probability of manufacturing a metal plate 64 that satisfies condition (1) can be increased. By adjusting the thickness of the surface portion removed by the base material surface treatment process or the metal layer surface treatment process, the probability of manufacturing a metal plate 64 that satisfies condition (1) can be adjusted. Similarly, by adjusting the thickness of the surface portion removed by the base material surface treatment process or the metal layer surface treatment process, the probability of manufacturing a metal plate 64 that satisfies other conditions (2) to (7) can be adjusted. Similarly, by adjusting the thickness of the surface portion removed by the base material surface treatment process or the metal layer surface treatment process, the first ratio, the second ratio and the third ratio of the metal plate 64 can be adjusted. Only one of the base material surface treatment process and the metal layer surface treatment process can be implemented, or both can be implemented.

[0392] Next, a fixing step is performed to fix the vapor deposition mask 20 obtained as described above to the frame 15. In this way, the vapor deposition mask device 10 including the vapor deposition mask 20 and the frame 15 can be obtained.

[0393] In the fixing process, first, a setting process of adjusting the position of the vapor deposition mask 20 relative to the frame 15 is performed while tension is applied to the vapor deposition mask 20. In the setting process, for example, the ends 17a and 17b of the vapor deposition mask 20 are clamped and held by a clamp portion not shown. Next, while tension is applied to the vapor deposition mask 20, the position and tension of the vapor deposition mask 20 are adjusted so that the difference between the position of the through hole 25 of the vapor deposition mask 20 and the position of the electrode on the organic EL substrate 92 (or the substrate simulating the organic EL substrate 92) is less than a predetermined reference value. The reference value is, for example, 3 μm. Next, a welding process is performed to heat the end 17 of the vapor deposition mask 20 while the end 17 is in contact with the frame 15, and weld the end 17 to the frame 15. For example, a pulsed laser is irradiated on the end 17, and multiple locations of the end 17 are welded to the frame 15. In this way, the vapor deposition mask 20 can be fixed to the frame 15.

[0394] Next, a vapor deposition method for vapor-depositing the vapor deposition material 98 on a substrate such as an organic EL substrate 92 using the vapor deposition mask 20 of the present embodiment is described. First, the vapor deposition mask device 10 is arranged in such a manner that the vapor deposition mask 20 and the organic EL substrate 92 are opposed to each other. In addition, the vapor deposition mask 20 and the organic EL substrate 92 are closely fitted using a magnet 93. In this state, the vapor deposition material 98 is evaporated and flies onto the organic EL substrate 92 via the vapor deposition mask 20, thereby enabling the vapor deposition material 98 to be attached to the organic EL substrate 92 in a pattern corresponding to the through hole 25 of the vapor deposition mask 20. Here, in the vapor deposition mask 20 of the present embodiment, the shape accuracy of the through hole 25 is suppressed from being reduced due to particles as described above. Therefore, the accuracy of the area, shape, thickness, etc. of the vapor deposition material 98 attached to the organic EL substrate 92 can be improved.

[0395] Various changes may be made to the above-mentioned embodiment. Hereinafter, the modified example will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for the parts having the same structure as the above-mentioned embodiment, the same symbols as those used for the corresponding parts in the above-mentioned embodiment are used, and repeated descriptions are omitted. In the case where it is obvious that the effects obtained in the above-mentioned embodiment can also be obtained in the modified example, the description thereof is sometimes omitted.

[0396] First, a modification of the method of manufacturing the metal plate 64 will be described. Fig.44 This is a schematic diagram for generally explaining a modified example of the method for manufacturing the vapor deposition mask 20 . Fig.44 The manufacturing apparatus 70 shown in the figure is different only in that it is provided with a thinning device 75 located upstream of the resist film forming device 71, and the other structures are the same as those of the present invention. Fig.40 The manufacturing apparatus 70 shown above is the same.

[0397] The thinning device 75 is a device for reducing the thickness of the metal plate 64 rolled out from the coil. The thinning device 75 reduces the thickness of the metal plate 64 by, for example, etching the entire area of ​​at least the portion of the metal plate 64 corresponding to the effective area 22. By thinning the metal plate 64, a metal plate 64 with a small thickness can be obtained even when it is difficult to increase the reduction rate in the rolling process.

[0398] Next, a modified example of the process of forming the through hole 25 on the metal plate 64 in the manufacturing method of the metal plate 64 is described. In the above embodiment, an example is shown in which the process of forming the through hole 25 on the metal plate 64 includes a first surface etching process of etching the metal plate 64 from the first surface 64a side and a second surface etching process of etching the metal plate 64 from the second surface 64b side. However, it is not limited to this, and the process of forming the through hole 25 on the metal plate 64 may also include laser processing of irradiating the metal plate 64 with laser to process the through hole 25. In this case, as described below, laser processing can be performed instead of the first surface etching process.

[0399] First, if Fig.45 As shown in FIG. 6A , a second resist pattern 65d is formed on the second surface 64b of the metal plate 64. Fig.46 As shown, the second surface etching step is performed to form the second recess 35 on the second surface 64b by etching the area of ​​the second surface 64b of the metal plate 64 that is not covered by the second resist film 65b. Fig.47 As shown, a laser processing step is performed to irradiate a portion of the metal plate 64 where the second recess 35 is formed with laser light L, thereby forming the first recess 30 that penetrates from the wall surface of the second recess 35 to the first surface 64a. Fig.47 As shown, the laser light L1 may be irradiated from the second surface 64 b side of the metal plate 64 .

[0400] exist Figure 45 to Figure 47 In the example shown, if the particles 64d in the metal plate 64 fall off during the second surface etching process, the size of the through hole 25 may deviate from the designed value or the size may vary. Figure 45 to Figure 47 In the example shown, it is also useful to use a metal plate 64 that satisfies the above conditions (1), (2), etc.

[0401] like Fig.47 As shown in FIG. 1 , the wall surface 31 of the first recess 30 formed by laser processing may be inclined in such a manner that it is displaced toward the center of the through hole 25 in a plan view as it moves from the second surface 64b side toward the first surface 64a side. In this case, the end of the first recess 30 on the first surface 64a defines a through portion 42 having the smallest opening area of ​​the through hole 25 in a plan view.

[0402] Next, a modified example of the inspection process is described. In the above-mentioned present embodiment, an example of an inspection process of inspecting the density and size of the particles 64d contained in the metal plate 64 before the through hole 25 is formed is shown. However, it is not limited to this, and the inspection process of inspecting the particles 64d contained in the metal plate 64 can also be carried out on the metal plate 64 after the through hole 25 is formed, that is, on the evaporation mask 20. In this case, the sample 81 can be taken out from the portion of the metal plate 64 where the through hole 25 is not formed, such as the end portion 17a, 17b or the surrounding area 23 of the evaporation mask 20, to inspect the particles 64d. In the case of taking out the sample 81 from the portion of the metal plate 64 where the through hole 25 is not formed, the dissolved volume of the sample 81 can be calculated based on the thickness of the metal plate 64 constituting the evaporation mask 20, the area of ​​the sample piece 81a taken out from the sample 81, and the number of pieces. The sample 81 can also be taken out from the portion of the metal plate 64 where the through hole 25 is formed to inspect the particles 64d. In this case, the dissolved volume of the sample 81 can be calculated based on the measured value of the weight of the sample 81 and the data of the density of the material constituting the sample 81 .

[0403] [Example]

[0404] Next, the embodiments of the present disclosure will be described in more detail with reference to examples. However, the embodiments of the present disclosure are not limited to the description of the following examples unless the scope of the invention is exceeded.

[0405] Example 1

[0406] First, iron, nickel and other raw materials are prepared so that the ratio of iron to all raw materials and the ratio of nickel to all raw materials are about 64% by weight and about 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting step of melting each raw material in a melting furnace is carried out. In the first melting step, aluminum, manganese and silicon are put into the melting furnace for deoxidation, dehydration, denitrification, etc. The first melting step is carried out in an atmosphere of an inert gas under a low pressure state lower than atmospheric pressure. Next, the first surface treatment step of removing the surface portion of the first ingot obtained by the first melting step is carried out. The thickness of the removed surface portion is 10 mm or more.

[0407] Next, a second melting step and a second surface treatment step are further performed. In the second melting step, the first ingot whose surface portion is removed in the first surface treatment step is melted in a melting furnace to obtain a second ingot. In the second surface treatment step, the surface portion of the second ingot is removed. The thickness of the removed surface portion is 10 mm or more. In this way, a base material composed of an iron alloy containing nickel and the balance being iron and inevitable impurities is prepared.

[0408] Next, the base material is subjected to the above-mentioned rolling process, annealing process and trimming process to produce a coil (first coil) formed by winding a metal plate having a thickness of 20 μm. Next, the metal plate 64 of the first coil is subjected to the above-mentioned Figures 6 to 11 The manufacturing method shown is used to manufacture the vapor deposition mask 20. The vapor deposition mask 20 manufactured from the metal plate 64 of the first winding body is also referred to as the first mask. Next, a square sample 81 with a side length K1 of 60 mm is cut out from the first end 17a of the first mask. The sample 81 includes the first surface 64a and the second surface 64b of the metal plate 64 constituting the first end 17a of the first mask. In addition, three circular sample pieces 81a with a diameter K2 of 20 mm are punched out from the sample 81. Next, the sample piece 81a is ultrasonically cleaned with pure water to remove foreign matter attached to the sample piece 81a. The frequency of the ultrasonic wave is 28 kHz, and the time of the ultrasonic cleaning is 10 seconds.

[0409] Next, a sample dissolution step is performed to dissolve the sample piece 81a in the aqueous solution 83. Specifically, first, a beaker with a volume of 500 ml is prepared as a container 82, and three sample pieces 81a are placed in the beaker. Next, 100 ml of a 50°C aqueous solution 83 is injected into the beaker to dissolve the sample piece 81a. At this time, the beaker is shaken for the first 15 minutes, and then the beaker is stationary for the next 15 minutes, for a total of 30 minutes, so that the sample piece 81a is dissolved in the aqueous solution 83 in the beaker. As the aqueous solution 83, an aqueous solution containing nitric acid is used. Specifically, the aqueous solution 83 is prepared by mixing 500 ml of nitric acid solution with 500 ml of pure water. As the nitric acid solution, special grade nitric acid (1.38) manufactured by Hayashi Jun Chemical Industries Co., Ltd. is used. Special grade nitric acid (1.38) is an aqueous solution containing nitric acid at a concentration of 60% by weight.

[0410] Next, a filtration process is performed, and particles are taken out from the aqueous solution 83 in which the sample piece 81a is dissolved using a suction filtration device. As filter paper, a membrane filter JHWP02500 manufactured by MILLIPORE is used. The diameter of the pores of JHWP02500, i.e., the pore size, is 0.45 μm. Therefore, it is considered that particles having a size of at least 1 μm or more are retained on JHWP02500. As a decompression unit for decompressing the space on the downstream side of the filter paper, a Chemical Duty vacuum pressure dual-purpose pump WP6110060 manufactured by MILLIPORE is used. In addition, after filtering the aqueous solution in the beaker once with filter paper, a washing process of injecting pure water into the beaker and filtering the pure water with filter paper is performed three times.

[0411] Next, the above-mentioned particle drying step is performed to dry the filter paper and the particles remaining on the filter paper.

[0412] Next, the above observation process was carried out using SEM to detect the particles on the filter paper. As the SEM, a scanning electron microscope JSM7800FPRIME manufactured by JEOL Ltd. was used. The settings of the SEM and the method for adjusting the contrast and / or brightness of the SEM are as described above. Next, the detected particles were analyzed using the particle automatic analysis software Particle Phaze Analysis 6.53 version manufactured by AMETEK. In addition, the composition analysis of the particles was carried out using the EDX device Octane Elect manufactured by AMETEK. Thus, particles containing elements other than iron and nickel as main components and having an equivalent circle diameter of 1 μm or more were extracted. In addition, the number of particles per 1 mm was calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume sample 81 (hereinafter also referred to as the total number) is 924 particles.

[0413] like Fig.48 As shown, every 1mm 3 Among the particles contained in the volume sample 81, the number of particles having an equivalent circle diameter of 1 μm or more and less than 3 μm (hereinafter also referred to as the first number) is 912, the number of particles having an equivalent circle diameter of 3 μm or more and less than 5 μm (hereinafter also referred to as the second number) is 12, and the number of particles having an equivalent circle diameter of 5 μm or more (hereinafter also referred to as the third number) is 0. The number of particles having an equivalent circle diameter of 3 μm or more is 12. Therefore, in the metal plate of the first mask, the above conditions (1), (2), (3), and (4) are satisfied.

[0414] In addition, the ratio of the first number to the total number of particles having an equivalent circle diameter of 1 μm or more (hereinafter also referred to as the first ratio), the ratio of the second number to the total number of particles having an equivalent circle diameter of 1 μm or more (hereinafter also referred to as the second ratio), and the ratio of the third number to the total number of particles having an equivalent circle diameter of 1 μm or more (hereinafter also referred to as the third ratio) are calculated respectively. Fig.48 As shown in the brackets below the first, second, and third quantities, the first ratio is 98.7%, the second ratio is 1.3%, and the third ratio is 0.0%.

[0415] In addition, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. Fig.49 As shown, every 1mm 3Among the particles contained in the volume sample 81, there are 6 particles with magnesium as the main component (hereinafter also referred to as the Mg number), 770 particles with aluminum as the main component (hereinafter also referred to as the Al number), 80 particles with silicon as the main component (hereinafter also referred to as the Si number), 0 particles with phosphorus as the main component (hereinafter also referred to as the P number), 37 particles with zirconium as the main component (hereinafter also referred to as the Zr number), and 31 particles with sulfur as the main component (hereinafter also referred to as the S number).

[0416] Example 2~Example 4

[0417] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to all raw materials and the ratio of nickel to all raw materials are approximately 64% by weight and approximately 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting process, the first surface treatment process, the second melting process and the second surface treatment process are implemented to produce a base material. Then, by subjecting the base material to a rolling process, an annealing process and a trimming process, the second to fourth winding bodies formed by winding a metal plate 64 having a thickness of 20 μm are respectively manufactured. The manufacturing conditions of the second to fourth winding bodies are roughly the same as those of the first winding body, but the details are different. Specifically, the manufacturing conditions of the second to fourth winding bodies are different from those of the first winding body in at least one of the following (A) to (D). In addition, the manufacturing conditions of the second to fourth winding bodies are different from each other in at least one of the following (A) to (D).

[0418] (A) Amount of additives in the first melting step

[0419] (B) Thickness of the surface portion removed in the first surface treatment step

[0420] (C) Number of melting steps

[0421] (D) Atmosphere Pressure in the First Melting Step

[0422] As in the case of the above-mentioned Example 1, the metal plates 64 of the second to fourth winding bodies are used, and the above-mentioned Figures 6 to 11 The deposition mask 20 is manufactured by the manufacturing method shown. The deposition mask 20 manufactured by the metal plate 64 of the second to fourth winding bodies is also referred to as the second to fourth masks. Next, the particles contained in each sample 81 taken out from the first end 17a of the second to fourth masks are observed using SEM, and the number of particles per 1 mm is calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle are shown in Fig.48In addition, similarly to the case of Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Fig.49 .

[0423] Example 5~Example 12

[0424] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to the total raw materials and the ratio of nickel to the total raw materials are about 64% by weight and about 36% by weight, respectively. Then, after crushing each raw material as needed, the first melting step, the first surface treatment step, the second melting step and the second surface treatment step are performed to produce the second ingot. Then, the third melting step and the third surface treatment step are further performed, and the second ingot whose surface portion is removed in the second surface treatment step is melted in a melting furnace in the third melting step to obtain the third ingot, and the surface portion of the third ingot is removed in the third surface treatment step. The thickness of the removed surface portion is more than 10 mm. In this way, a base material composed of an iron alloy containing nickel and the remainder being iron and inevitable impurities is prepared. Then, by performing a rolling step, an annealing step and a trimming step on the base material, the fifth to twelfth winding bodies formed by winding a metal plate 64 having a thickness of 20 μm are respectively manufactured. The manufacturing conditions of the fifth to twelfth wound bodies are substantially the same, but differ in details. Specifically, the manufacturing conditions of the fifth to twelfth wound bodies differ from each other in at least one of the following (A) to (D).

[0425] (A) Amount of additives in the first melting step

[0426] (B) Thickness of the surface portion removed in the first surface treatment step

[0427] (C) Number of melting steps

[0428] (D) Atmosphere Pressure in the First Melting Step

[0429] As in the case of Example 1, the metal plates 64 of the fifth to twelfth winding bodies are used, and the above Figures 6 to 11 The vapor deposition mask 20 was manufactured by the manufacturing method shown. The vapor deposition masks 20 manufactured by the metal plates 64 of the 5th to 12th winding bodies are respectively referred to as the 5th to 12th masks. Next, the particles contained in each sample taken out from the first end 17a of the 5th to 12th masks were observed using SEM, and the number of particles and the equivalent circle diameter of each particle were calculated. The results are shown in Fig.48 .

[0430] In addition, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed in the same manner as in Example 1. The results are shown in Fig.49 .

[0431] When the metal plate 64 of the seventh winding body was used, the resist film peeled off from the metal plate 64 during the etching process of forming the through-hole 25 by etching the metal plate 64. Therefore, the vapor deposition mask 20 could not be manufactured using the metal plate 64 of the seventh winding body. Figure 48-49 The measurement results described in the row of “7th mask” are the results of observing particles contained in a sample taken out from the metal plate 64 of the 7th wound body using SEM and the results of analyzing the composition of the particles.

[0432] Example 13~Example 17

[0433] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to the total raw materials and the ratio of nickel to the total raw materials are approximately 64% by weight and approximately 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting step and the first surface treatment step are performed to produce a base material. Then, by performing a rolling step, an annealing step and a trimming step on the base material, the 13th to 17th winding bodies, each of which is formed by winding a metal plate 64 having a thickness of 20 μm, are produced.

[0434] The manufacturing conditions of the 13th to 17th wound bodies are substantially the same, but the details are different. Specifically, the manufacturing conditions of the 13th to 17th wound bodies are different from each other in at least one of the following manufacturing conditions (A) to (D).

[0435] (A) Amount of additives in the first melting step

[0436] (B) Thickness of the surface portion removed in the first surface treatment step

[0437] (C) Number of melting steps

[0438] (D) Atmosphere Pressure in the First Melting Step

[0439] As in the case of the above-mentioned Example 1, the metal plates 64 of the 13th to 17th winding bodies are used, and the above-mentioned Figures 6 to 11 The deposition mask 20 is manufactured by the manufacturing method shown. The deposition mask 20 manufactured by the metal plate 64 of the 13th to 17th winding bodies is also referred to as the 13th to 17th masks, respectively. Next, the particles contained in each sample 81 taken out from the first end 17a of the 13th to 17th masks are observed using SEM, and the number of particles per 1 mm is calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle are shown in Fig.48In addition, similarly to the case of Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Fig.49 .

[0440] Example 21~Example 22

[0441] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to the total raw materials and the ratio of nickel to the total raw materials are approximately 64% by weight and approximately 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting step, the first surface treatment step, the second melting step and the second surface treatment step are performed to produce a base material. Then, by performing a rolling step, an annealing step and a trimming step on the base material, the 21st winding body and the 22nd winding body formed by winding the metal plate 64 are respectively manufactured. The metal plate 64 of the 21st winding body has a thickness of 50 μm. The metal plate 64 of the 22nd winding body has a thickness of 80 μm.

[0442] As in the case of Example 1, the metal plates 64 of the 21st winding body and the 22nd winding body are used, and the Figure 6 to Figure 11 The vapor deposition mask 20 is manufactured by the manufacturing method shown. The vapor deposition mask 20 manufactured by the metal plate 64 of the 21st winding body and the 22nd winding body is also referred to as the 21st mask and the 22nd mask. Next, the particles contained in each sample 81 taken out from the first end 17a of the 21st mask and the 22nd mask are observed using SEM, and the number of particles per 1 mm is calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle are shown in Fig.48 In addition, similarly to the case of Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Fig.49 .

[0443] Example 23

[0444] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to the total raw materials and the ratio of nickel to the total raw materials are approximately 64% by weight and approximately 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting step and the first surface treatment step are performed to produce a base material. Then, the base material is subjected to a rolling step, an annealing step and a trimming step to produce a 23rd winding body formed by winding a metal plate 64. The metal plate 64 of the 23rd winding body has a thickness of 70 μm.

[0445] As in the case of Example 1, the metal plate 64 of the 23rd winding body is used, and the Figures 6 to 11The deposition mask 20 was manufactured by the manufacturing method shown. The deposition mask 20 manufactured by the metal plate 64 of the 23rd winding body is also referred to as the 23rd mask. Next, the particles contained in each sample 81 taken out from the first end 17a of the 23rd mask were observed using SEM, and the number of particles per 1 mm was calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle are shown in Fig.48 In addition, similarly to the case of Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Fig.49 .

[0446] Example 24~25

[0447] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to all raw materials and the ratio of nickel to all raw materials are about 64 weight % and about 36 weight %, respectively. Then, each raw material is crushed as needed, and the first melting process, the first surface treatment process, the second melting process and the second surface treatment process are implemented to produce the second ingot. Then, the third melting process and the third surface treatment process are further implemented, and the second ingot whose surface part is removed in the second surface treatment process is melted in the melting furnace in the third melting process to obtain the third ingot, and the surface part of the third ingot is removed in the third surface treatment process. The thickness of the removed surface part is more than 10 mm. In this way, a base material composed of an iron alloy containing nickel and the balance being iron and inevitable impurities is prepared. Then, by performing a rolling process, an annealing process and a trimming process on the base material, the 24th winding body and the 25th winding body formed by winding the metal plate 64 are respectively manufactured. The metal plate 64 of the 24th winding body has a thickness of 60 μm. The metal plate 64 of the 25th winding body has a thickness of 16 μm.

[0448] As in the case of Example 1, the metal plates 64 of the 24th winding body and the 25th winding body are used, and the Figures 6 to 11 The vapor deposition mask 20 was manufactured by the manufacturing method shown. The vapor deposition mask 20 manufactured by the metal plate 64 of the 24th winding body and the 25th winding body is also referred to as the 24th mask and the 25th mask. Next, the particles contained in each sample 81 taken out from the first end 17a of the 24th mask and the 25th mask were observed using SEM, and the number of particles per 1 mm was calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle are shown in Fig.48 In addition, similarly to the case of Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Fig.49 .

[0449] Next, evaluation A and evaluation B regarding the area accuracy of the through-holes 25 of the first to seventeenth masks and the twenty-first to twenty-fifth masks are performed.

[0450] (Evaluation A of Through-hole Area Accuracy)

[0451] It is evaluated whether the area of ​​the through hole 25 of the vapor deposition mask 20 is within a predetermined allowable range. Fig.62 As shown in FIG. 1 , the area S1 of a certain through hole 25X and the average value S2 of the areas of two or more through holes 25Y surrounding the through hole 25X are measured. Fig.62 In the example shown, the number of through holes 25Y is 4. Next, it is evaluated whether the absolute value of (S1-S2) / S2 is less than the first threshold value. The first threshold value is set based on the pixel density of the display device manufactured using the vapor deposition mask 20, the average value of the size of the through holes 25, etc. For example, in the case of the vapor deposition mask 20 in which the average value of the equivalent circle diameter of the through holes 25 is 30 μm, the first threshold value is 0.20.

[0452] As a method for measuring the area of ​​the through hole 25, a method using light passing through the through hole 25 is adopted. Specifically, parallel light is incident on one of the first surface 20a or the second surface 20b of the vapor deposition mask 20 along the normal direction of the metal plate 64, and is made to pass through the through hole 25 and be emitted from the other of the first surface 20a or the second surface 20b. Then, the area occupied by the emitted light in the surface direction of the metal plate 64 is photographed by a camera, and the area of ​​the area is measured. The measurement result is used as the area of ​​each through hole 25. In this case, the contour of the through portion 42 of the vapor deposition mask 20 in the top view determines the area of ​​the area occupied by the light emitted from the vapor deposition mask 20 in the surface direction of the metal plate 64.

[0453] The evaluation results are shown in Fig.48 In the "Evaluation A-1" column and the "Evaluation A-2" column. In the "Evaluation A-1" column, "OK" means that in all the through holes 25 of the vapor deposition mask 20, the absolute value of (S1-S2) / S2 is less than 0.20; "NG" means that in at least a part of the through holes 25, (S1-S2) / S2 is greater than 0.20. In the "Evaluation A-2" column, "OK" means that in all the through holes 25 of the vapor deposition mask 20, the absolute value of (S1-S2) / S2 is less than 0.20; "NG" means that in at least a part of the through holes 25, (S1-S2) / S2 is less than -0.20. Therefore, in the case of the above-mentioned enlarged through holes, NG is likely to occur in the evaluation A-1, and in the case of the above-mentioned reduced through holes, NG is likely to occur in the evaluation A-2. The number of through holes 25 to be evaluated is more than 25 million in each vapor deposition mask 20.

[0454] (Evaluation B of Through-hole Area Accuracy)

[0455] It is evaluated whether the absolute value of the above (S1-S2) / S2 is less than or equal to a second threshold value that is smaller than the first threshold value. The second threshold value is set based on the pixel density of the display device manufactured using the vapor deposition mask 20, the average value of the size of the through hole 25, etc. For example, in the case of the vapor deposition mask 20 in which the average value of the equivalent circle diameter of the through hole 25 is 20 μm, the second threshold value is 0.15.

[0456] The evaluation results are shown in Fig.48 In the "Evaluation B-1" column and the "Evaluation B-2" column. In the "Evaluation B-1" column, "OK" means that in all the through holes 25 of the vapor deposition mask 20, the absolute value of (S1-S2) / S2 is less than 0.15; "NG" means that in at least a part of the through holes 25, (S1-S2) / S2 is greater than 0.15. In the "Evaluation B-2" column, "OK" means that in all the through holes 25 of the vapor deposition mask 20, the absolute value of (S1-S2) / S2 is less than 0.15; "NG" means that in at least a part of the through holes 25, (S1-S2) / S2 is less than -0.15. Therefore, in the case of the above-mentioned enlarged through holes, NG is likely to occur in the evaluation B-1, and in the case of the above-mentioned reduced through holes, NG is likely to occur in the evaluation B-2. The number of through holes 25 to be evaluated is more than 25 million in each vapor deposition mask 20.

[0457] The higher the pixel density of the display device, the smaller the size of the through hole 25 is. For example, in the case of a WQHD smartphone display device, the pixel density is about 500 ppi, and the diameter of the through hole 25 is about 30 μm. In the case of a UHD smartphone display device, the pixel density is about 800 ppi, and the diameter of the through hole 25 is about 20 μm.

[0458] In order to accurately form the through holes 25 having a small size on the metal plate 64, the thickness of the metal plate 64 is preferably small. For example, the thickness of the metal plate 64 of the evaporation mask 20 used to manufacture a smartphone display device having a pixel density of about 500ppi is preferably 20μm or less. On the other hand, the thickness of the metal plate 64 of the evaporation mask 20 used to manufacture a smartphone display device having a pixel density of about 800ppi is preferably 15μm or less.

[0459] Hereinafter, the results of Evaluation A-1 and Evaluation A-2 and Evaluation B-1 and Evaluation B-2 will be described.

[0460] like Fig.48 As shown, about every 1mm 3The particles contained in the volume sample 81, in the 1st to 6th masks, the 8th to 12th masks, the 16th mask, the 17th mask, and the 21st to 25th masks, in which the number of particles having an equivalent circle diameter of 1 μm or more is 50 or more and 3000 or less, the evaluation A-1 is OK. On the other hand, in the 13th to 15th masks, in which the number of particles having an equivalent circle diameter of 1 μm or more is more than 3000, the evaluation A-1 is NG. Therefore, it can be said that the above condition (1) is a useful judgment condition for suppressing the formation of enlarged through holes.

[0461] like Fig.48 As shown, about every 1mm 3 The particles contained in the volume sample 81, in the 1st to 6th masks, the 8th to 13th masks, the 16th mask, the 17th mask, and the 21st to 25th masks, in which the number of particles having an equivalent circle diameter of 3 μm or more is 50 or less, the evaluation A-2 is OK. On the other hand, in the 14th and 15th masks, in which the number of particles having an equivalent circle diameter of 3 μm or more is greater than 50, the evaluation A-2 is NG. Therefore, it can be said that the above condition (2) is a useful judgment condition for suppressing the formation of reduced through holes.

[0462] As described above, when the metal plate 64 of the seventh winding body is used, the resist film peels off from the metal plate 64 during the etching process of forming the through hole 25 by etching the metal plate 64. Therefore, the vapor deposition mask 20 cannot be manufactured using the metal plate 64 of the seventh winding body. Fig.48 As shown, every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume sample 81 is less than 50. Therefore, it can be said that the item "the number of particles having an equivalent circle diameter of 1 μm or more is 50 or more" in the above condition (1) is a useful judgment condition for suppressing peeling of the resist film.

[0463] like Fig.48 As shown, about every 1mm 3 The particles contained in the volume sample 81, in the 1st mask, the 4th mask to the 6th mask, the 8th mask to the 12th mask, the 24th mask, and the 25th mask, in which the number of particles having an equivalent circle diameter of 1 μm or more is 1000 or less, the evaluation B-1 is OK. On the other hand, in the 2nd mask, the 3rd mask, the 13th mask to the 17th mask, and the 21st mask to the 23rd mask, in which the number of particles having an equivalent circle diameter of 1 μm or more and less than 3 μm is more than 1000, the evaluation B-1 is NG. Therefore, it can be said that the above condition (3) is a useful judgment condition for more reliably suppressing the formation of enlarged through holes.

[0464] like Fig.48 As shown, about every 1mm 3 The particles contained in the volume sample 81 are evaluated as OK in the 1st mask, the 4th mask to the 6th mask, the 8th mask to the 12th mask, the 21st mask, the 22nd mask, the 24th mask, and the 25th mask, in which the number of particles having an equivalent circle diameter of 3 μm or more is 20 or less. On the other hand, the evaluation B-2 is NG in the 2nd mask, the 3rd mask, the 13th mask to the 17th mask, and the 23rd mask, in which the number of particles having an equivalent circle diameter of 3 μm or more is greater than 20. Therefore, it can be said that the above condition (4) is a useful judgment condition for more reliably suppressing the formation of the reduced through hole.

[0465] In the above-mentioned Examples 1 to 6, 8 to 17, and 21 to 25, the observation results of the particles contained in the sample taken out from the first end 17a of the vapor deposition mask 20 are shown. It is expected that when observing the particles contained in the samples taken out from the metal plate 64 of the 1st to 6th winding bodies, the 8th to 17th winding bodies, and the 21st to 25th winding bodies, the same observation results as these observation results can be obtained. This is because, in the first surface etching process and the second surface etching process, the area of ​​the metal plate 64 corresponding to the first end 17a is covered by the first resist film 65a and the second resist film 65b. Therefore, it is considered that the state of the metal plate 64 constituting the first end 17a is the same as the state of the metal plate 64 when constituting the winding body in terms of the distribution of particles.

[0466] (Supplementary evaluation 1)

[0467] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to the total raw materials and the ratio of nickel to the total raw materials are about 64% by weight and about 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting step, the first surface treatment step, the second melting step and the second surface treatment step are performed to produce a base material. Then, the base material is subjected to a rolling step, an annealing step and a trimming step, thereby producing an 18th winding body having a thickness of 20 μm and in which the metal plate 64 is wound into a coil.

[0468] Next, a square sample 81 with a side length K1 of 60 mm was cut out at a position 1 m away from the front end of the metal plate of the 18th winding in the longitudinal direction of the metal plate. Similarly, a square sample 81 with a side length K1 of 60 mm was cut out at positions 100 m, 200 m, 300 m, and 400 m away from the front end of the metal plate of the 18th winding in the longitudinal direction of the metal plate. After cutting out the sample 81 at five positions of the metal plate of the 18th winding in this way, the particles contained in each sample 81 were observed using an SEM in the same manner as in Example 1 above, and the number of particles per 1 mm was calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circle diameter of each particle were analyzed. In addition, as in the case of the above-mentioned Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Figure 50-51 .

[0469] like Fig.50 As shown, the sample 81 cut out has a thickness of 1 mm. 3 The number of particles with an equivalent circle diameter of 1 μm or more contained in the volume was distributed in the range of 585 to 859, with an average of 689.0 and a distribution range of 274. The distribution range refers to the number of particles per 1 mm of the sample 81 cut out at 5 locations. 3 The difference between the maximum and minimum values ​​of the number of particles with an equivalent circle diameter of 1 μm or more contained in the volume. The value obtained by dividing the distribution range by the average value is 0.398. Therefore, every 1 mm of the sample 81 cut out at 5 locations 3 The number of particles with an equivalent circle diameter of 1 μm or more contained in the volume is within the range of ±20% of the median value between the maximum value and the minimum value. The ratio of the maximum value to the minimum value is 1.5 or less. Therefore, it can be said that for every 1 mm of the sample 81 cut out at any position of the rolled winding body, 3 For example, when the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume is Y, the sample 81 cut out from another position of the same wound body has a diameter of Y per 1 mm. 3 There is a high possibility that the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume is less than 1.5×Y.

[0470] Fig.50 The sample 81 cut out at five locations is shown in FIG. 3 The number and ratio of particles of each size contained in the volume. The same tendency as in the case of the total number is observed for the first ratio and the second ratio. Fig.51 The results of the composition analysis of the particles shown above also showed the same tendency as in the case of the total number.

[0471] (Supplementary evaluation 2)

[0472] As in Example 1, iron, nickel and other raw materials are prepared so that the ratio of iron to the total raw materials and the ratio of nickel to the total raw materials are about 64% by weight and about 36% by weight, respectively. Then, each raw material is crushed as needed, and the first melting step, the first surface treatment step, the second melting step and the second surface treatment step are performed to produce a base material. Then, the base material is subjected to a rolling step, an annealing step and a trimming step, thereby producing a 19th winding body having a thickness of 20 μm and in which the metal plate 64 is wound into a coil.

[0473] Next, similarly to the case of Example 1, the metal plate 64 of the 19th winding body is used to Figures 6 to 11 The deposition mask 20 was manufactured by the manufacturing method shown in the figure. In addition, the particles contained in each sample 81 taken out from the first end 17a and the second end 17b of the deposition mask 20 were observed using SEM, and the number of particles per 1 mm was calculated. 3 The number of particles contained in the sample 81 of volume and the equivalent circular diameter of each particle. The results are shown in Fig.52 In addition, as in the case of the above-mentioned Example 1, the composition of particles having an equivalent circle diameter of 1 μm or more was analyzed using an EDX device. The results are shown in Fig.53 .

[0474] like Fig.52 As shown, the sample 81 cut out has a thickness of 1 mm. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume is distributed in the range of 833 to 1158, with an average value of 995.5 and a distribution range of 325. The distribution range refers to the number of particles per 1 mm of the sample 81 cut out at the first end 17a. 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the volume is proportional to the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume per 1 mm of the sample 81 cut out at the second end 17 b. 3 The difference in the number of particles with an equivalent circle diameter of 1 μm or more contained in the volume. The value obtained by dividing the distribution range by the average value is 0.326. Therefore, the sample 81 cut from the first end 17a and the second end 17b of the evaporation mask 20 has a diameter of 1 mm. 3 The number of particles with an equivalent circle diameter of 1 μm or more contained in the volume is within the range of ±20% of the median value between the maximum value and the minimum value. The ratio of the number of particles at the first end 17a to the number of particles at the second end 17b is 1.5 or less. Therefore, it can be said that for every 1 mm of the sample 81 cut out at any position of the evaporation mask, 3 When the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume is, for example, Z, the sample 81 cut out at another position of the same deposition mask has a diameter of 1 mm.3 There is a high possibility that the number of particles having an equivalent circle diameter of 1 μm or more contained in the volume is less than 1.5×Z pieces.

[0475] Fig.52 The sample 81 cut out at the first end 17a and the second end 17b of the vapor deposition mask 20 is also shown. 3 The number and ratio of particles of various sizes contained in the volume. The same tendency as in the case of the total number was observed for the first ratio and the second ratio. Fig.53 The results of the composition analysis of the particles shown above also showed the same tendency as in the case of the total number.

Claims

1. A metal plate for manufacturing a vapor deposition mask, the metal plate comprising a first surface and a second surface located on the opposite side of the first surface, and containing iron and nickel, wherein: having particles containing an element other than iron and nickel as a main component, In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied: (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less; (2) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less, The particles at least include particles containing silicon as a main component, The Si ratio of the particles is 80.9% or less, The Si ratio is the ratio of the amount of Si to the total amount of the particles having an equivalent circle diameter of 1 μm or more. The total number is per 1mm 3 the number of particles having an equivalent circular diameter of 1 μm or more contained in the volume of the sample, The Si quantity is per 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more and containing silicon as a main component contained in the sample by volume.

2. The metal plate according to claim 1, wherein The following conditions (3) are met: (3) Every 1mm 3 The number of the particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 1,000 or less.

3. The metal plate according to claim 1 or 2, wherein: The following conditions (4) are met: (4) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 20 or less.

4. The metal plate according to claim 1 or 2, wherein: The following conditions (5) are met: (5) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 20 or less.

5. The metal plate according to claim 1 or 2, wherein: The following conditions (6) are met: (6) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 2 or less.

6. The metal plate according to claim 1 or 2, wherein: The metal plate has a thickness of 70 μm or less.

7. The metal plate according to claim 1 or 2, wherein: The thickness of the metal plate is 50 μm or less.

8. The metal plate according to claim 1 or 2, wherein: The thickness of the metal plate is 30 μm or less.

9. A method for manufacturing a metal plate for manufacturing a vapor deposition mask, the metal plate comprising a first surface and a second surface located on the opposite side of the first surface, wherein: The method comprises the step of rolling a base material having an iron alloy containing nickel to produce the metal plate. The metal plate has particles containing an element other than iron and nickel as a main component, In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied: (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less; (2) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less, The particles at least include particles containing silicon as a main component, The Si ratio of the particles is 80.9% or less, The Si ratio is the ratio of the amount of Si to the total amount of the particles having an equivalent circle diameter of 1 μm or more. The total number is per 1mm 3 the number of particles having an equivalent circular diameter of 1 μm or more contained in the volume of the sample, The Si quantity is per 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more and containing silicon as a main component contained in the sample by volume.

10. The method for manufacturing a metal plate according to claim 9, wherein: A surface treatment step of removing a surface portion of the base material or the metal plate is provided.

11. The method for manufacturing a metal plate according to claim 10, wherein: The surface treatment step includes a base material surface treatment step of removing the surface portion of the base material. The thickness of the surface portion is 10 mm or more.

12. The method for manufacturing a metal plate according to claim 10, wherein: The surface treatment step includes a metal plate surface treatment step of removing the surface portion of the metal plate, The thickness of the surface portion is 5 μm or more.

13. The method for manufacturing a metal plate according to claim 10, wherein: The surface treatment step includes a step of removing the surface portion by bringing a surface treatment liquid into contact with the surface of the base material or the metal plate.

14. The method for producing a metal plate according to any one of claims 9 to 13, wherein: A screening step is provided for screening the metal plates satisfying the following conditions (1) and (2): (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less; (2) Every 1mm 3 The number of the particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less.

15. The method for producing a metal plate according to any one of claims 9 to 13, wherein: The following conditions (5) are met: (5) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 20 or less.

16. The method for producing a metal plate according to any one of claims 9 to 13, wherein: The following conditions (6) are met: (6) Every 1mm 3 The number of the particles having an equivalent circle diameter of 5 μm or more contained in the sample by volume is 2 or less.

17. A vapor deposition mask comprising: a metal plate including a first surface and a second surface located on the opposite side of the first surface, and containing iron and nickel; and Two or more through holes are formed on the metal plate, The metal plate has particles containing an element other than iron and nickel as a main component, In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied: (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less; (2) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less, The particles at least include particles containing silicon as a main component, The Si ratio of the particles is 80.9% or less, The Si ratio is the ratio of the amount of Si to the total amount of the particles having an equivalent circle diameter of 1 μm or more. The total number is per 1mm 3 the number of particles having an equivalent circular diameter of 1 μm or more contained in the volume of the sample, The Si quantity is per 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more and containing silicon as a main component contained in the sample by volume.

18. A method for manufacturing a vapor deposition mask, comprising: a step of preparing a metal plate including a first surface and a second surface located on the opposite side of the first surface and containing iron and nickel; and The processing step is to form two or more through holes on the metal plate. The metal plate has particles containing an element other than iron and nickel as a main component, In the sample including the first surface and the second surface of the metal plate, the following conditions (1) and (2) are satisfied: (1) Every 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more contained in the sample by volume is 50 or more and 3000 or less; (2) Every 1mm 3 The number of particles having an equivalent circle diameter of 3 μm or more contained in the sample by volume is 50 or less, The particles at least include particles containing silicon as a main component, The Si ratio of the particles is 80.9% or less, The Si ratio is the ratio of the amount of Si to the total amount of the particles having an equivalent circle diameter of 1 μm or more. The total number is per 1mm 3 the number of particles having an equivalent circular diameter of 1 μm or more contained in the volume of the sample, The Si quantity is per 1mm 3 The number of particles having an equivalent circle diameter of 1 μm or more and containing silicon as a main component contained in the sample by volume.

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