Voltage generation circuit and electronic device

Abstract

The application provides a voltage generating circuit and electronic equipment, comprising a bias current module, a response control module, a driving module, a threshold reduction module and an output voltage setting and sampling module, and has simple structure. The preset bias current input by the bias current module can control the transistor to work in a sub-threshold region, so that the circuit has low power consumption. The output voltage setting and sampling module can set the value of the target output voltage, improving the application flexibility of the circuit. The response control module can adjust the output current size generated by the driving module according to the sampling result output by the output voltage setting and sampling module, achieving the purpose of loop control of the current, which not only can ensure that the output voltage stability of the voltage generating circuit is high, but also can improve the dynamic response speed of the circuit. The threshold reduction module can control the driving module to work to provide the output current under the condition that the power supply voltage is lower, so that the voltage generating circuit has a wider input voltage range.

Description

Technical Field

[0001] This invention relates to the field of analog circuit technology, and more specifically, to a voltage generating circuit and electronic device. Background Technology

[0002] With the widespread use of consumer electronics such as mobile phones, smartwatches, tablets, and other wearable devices, product performance is constantly improving, and there are increasing demands for miniaturization and low power consumption. The control chip circuits in these devices, whether in their overall circuitry or sub-module circuitry, must also meet these requirements. Control chip circuit design often requires converting external power supply voltages to different internal voltages. Depending on the circuit's needs, the converted voltage often has different specifications: high precision, wide input voltage range, low quiescent power consumption, good line regulation, good dynamic regulation, good power supply rejection ratio, and low output noise, etc. The more specifications achieved, the more complex the circuit structure. Summary of the Invention

[0003] In view of this, the present invention provides a voltage generating circuit and electronic device, which effectively solves the problems existing in the prior art. The voltage generating circuit has the advantages of low power consumption, adjustable target output voltage, fast dynamic response speed, wide input voltage range, and simple circuit structure.

[0004] To achieve the above objectives, the technical solution provided by the present invention is as follows:

[0005] A voltage generation circuit includes a bias current module connected to a power supply voltage, a response control module, a drive module, and a threshold reduction module, as well as an output voltage setting and sampling module.

[0006] The bias current module is used to receive a preset bias current and mirror the preset bias current to the response control module and the threshold reduction module according to their respective set ratios. The preset bias current is used to control the transistor to operate in the subthreshold region.

[0007] The output voltage setting and sampling module is used to collect the output voltage change at the output terminal of the voltage generation circuit and output the sampling result, and is also used to set the value of the target output voltage at the output terminal of the voltage generation circuit.

[0008] The response control module is used to adjust the magnitude of the output current transmitted from the drive module to the output terminal of the voltage generation circuit according to the output voltage setting and the sampling result output by the sampling module, wherein, when the sampling result is that the output voltage is greater than the target output voltage, the output current is adjusted to decrease; and when the sampling result is that the output voltage is less than the target output voltage, the output current is adjusted to increase.

[0009] The threshold reduction module is used to control the drive module to provide the output current in response to an enable signal when the power supply voltage is lower than the set power supply voltage.

[0010] Optionally, the bias current module includes a first P-type transistor, a second P-type transistor, a first N-type transistor, a second N-type transistor, and a third N-type transistor;

[0011] The first terminal of the first N-type transistor, the gate of the first N-type transistor, and the gate of the second N-type transistor are all connected to the preset bias current, and the second terminals of the first N-type transistor, the second N-type transistor, and the third N-type transistor are all electrically connected to the ground terminal.

[0012] The first terminals of the first P-type transistor and the second P-type transistor are both connected to the power supply voltage, and the second terminal of the first P-type transistor, the gate of the first P-type transistor, and the gate of the second P-type transistor are all electrically connected to the first terminal of the second N-type transistor.

[0013] The first terminal of the third N-type transistor and the gate of the third N-type transistor are both electrically connected to the second terminal of the second P-type transistor.

[0014] Optionally, the response control module includes: a third P-type transistor, a fourth N-type transistor, and a fifth N-type transistor;

[0015] The first terminal of the third P-type transistor is connected to the power supply voltage, the gate of the third P-type transistor is electrically connected to the gate of the second P-type transistor, and the second terminal of the third P-type transistor is electrically connected to the first terminal of the fifth N-type transistor.

[0016] The second terminal of the fifth N-type transistor is electrically connected to the first terminal of the fourth N-type transistor. The gates of the fourth N-type transistor and the fifth N-type transistor are both electrically connected to the gate of the third N-type transistor. The second terminal of the fourth N-type transistor is electrically connected to the ground terminal.

[0017] Optionally, the threshold reduction module includes: a fourth P-type transistor, a fifth P-type transistor, a sixth N-type transistor, and a seventh N-type transistor;

[0018] The first terminal of the fourth P-type transistor and the first terminal of the fifth P-type transistor are both connected to the power supply voltage. The gate of the fourth P-type transistor, the second terminal of the fourth P-type transistor, and the second terminal of the fifth P-type transistor are all electrically connected to the first terminal of the seventh N-type transistor. The gate of the fifth P-type transistor and the gate of the seventh N-type transistor are both connected to the turn-on signal.

[0019] The second terminal of the seventh N-type transistor is electrically connected to the first terminal of the sixth N-type transistor, the gate of the sixth N-type transistor is electrically connected to the gate of the second N-type transistor, and the second terminal of the sixth N-type transistor is electrically connected to the ground terminal.

[0020] Optionally, the driving module includes a sixth P-type transistor, the first terminal of which is connected to the power supply voltage, the gate of which is electrically connected to the first terminal of the fifth N-type transistor, the substrate of which is electrically connected to the second terminal of the fourth P-type transistor, and the second terminal of which is electrically connected to the output terminal of the voltage generation circuit.

[0021] Optionally, the voltage generating circuit further includes a Miller compensation capacitor, the first plate of which is electrically connected to the gate of the sixth P-type transistor, and the second plate of which is electrically connected to the output terminal of the voltage generating circuit.

[0022] Optionally, the output voltage setting and sampling module includes: an eighth N-type transistor and a ninth N-type transistor;

[0023] The first terminal and the gate of the eighth N-type transistor are both electrically connected to the output terminal of the voltage generating circuit. The first terminal and the gate of the ninth N-type transistor are both electrically connected to the second terminal of the eighth N-type transistor. The second terminal of the ninth N-type transistor is electrically connected to the first terminal of the fourth N-type transistor.

[0024] Optionally, the output voltage setting and sampling module includes: a seventh P-type transistor and a tenth N-type transistor;

[0025] The first terminal of the seventh P-type transistor is electrically connected to the output terminal of the voltage generating circuit. The second terminal of the seventh P-type transistor, the gate of the seventh P-type transistor, the first terminal of the tenth N-type transistor, and the gate of the tenth N-type transistor are all electrically connected. The second terminal of the tenth N-type transistor is electrically connected to the first terminal of the fourth N-type transistor.

[0026] Optionally, the output voltage setting and sampling module includes: an eighth P-type transistor and a first NPN transistor;

[0027] The first terminal of the eighth P-type transistor is electrically connected to the output terminal of the voltage generating circuit. The second terminal of the eighth P-type transistor, the gate of the eighth P-type transistor, the first terminal of the first NPN transistor, and the base of the first NPN transistor are all electrically connected. The second terminal of the first NPN transistor is electrically connected to the first terminal of the fourth N-type transistor.

[0028] Optionally, the output voltage setting and sampling module includes: a diode and a second NPN transistor;

[0029] The anode of the diode is electrically connected to the output terminal of the voltage generating circuit, the first terminal and the base of the second NPN transistor are both electrically connected to the cathode of the diode, and the second terminal of the second NPN transistor is electrically connected to the first terminal of the fourth N-type transistor.

[0030] Optionally, the voltage generating circuit further includes a filter capacitor, wherein the first plate of the filter capacitor is electrically connected to the output terminal of the voltage generating circuit, and the second plate of the filter capacitor is electrically connected to the ground terminal.

[0031] Accordingly, the present invention also provides an electronic device, which includes the voltage generating circuit described above.

[0032] Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

[0033] This invention provides a voltage generation circuit and electronic device, including a bias current module connected to a power supply voltage, a response control module, a drive module, and a threshold reduction module, as well as an output voltage setting and sampling module. The voltage generation circuit has a simple structure. The preset bias current connected to the bias current module can control the transistor to operate in the subthreshold region, resulting in low circuit power consumption. The output voltage setting and sampling module can set the target output voltage value, improving the application flexibility of the circuit. The response control module can adjust the output current generated by the drive module based on the sampling results output by the output voltage setting and sampling module, achieving loop control and current regulation. This not only ensures high output voltage stability of the voltage generation circuit but also improves the dynamic response speed of the circuit. Furthermore, the threshold reduction module can control the drive module to provide output current even when the power supply voltage is lower, giving the voltage generation circuit a wider input voltage range. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of a voltage generation circuit provided in an embodiment of the present invention;

[0036] Figure 2This is a schematic diagram of another voltage generation circuit provided in an embodiment of the present invention;

[0037] Figure 3 This is a schematic diagram of another voltage generation circuit provided in an embodiment of the present invention;

[0038] Figure 4 This is a schematic diagram of the structure of an output voltage setting and sampling module provided in an embodiment of the present invention;

[0039] Figure 5 This is a schematic diagram of another output voltage setting and sampling module provided in an embodiment of the present invention;

[0040] Figure 6 This is a schematic diagram of another output voltage setting and sampling module provided in an embodiment of the present invention. Detailed Implementation

[0041] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0042] As described in the background section, in the design of control chip circuits, it is often necessary to convert the external power supply voltage into different internal voltages. Depending on the needs of the circuit, the converted voltage often has different specifications: high precision, wide input voltage range, low static power consumption, good line regulation, good dynamic regulation, good power supply rejection ratio, low output noise, etc. The more specifications that are achieved, the more complex the circuit structure becomes.

[0043] Based on this, the present invention provides a voltage generating circuit and electronic device, which effectively solves the problems existing in the prior art. The voltage generating circuit has the advantages of low power consumption, adjustable target output voltage, fast dynamic response speed, wide input voltage range, and simple circuit structure.

[0044] To achieve the above objectives, the technical solutions provided by the embodiments of the present invention are as follows, in detail... Figures 1 to 6 The technical solutions provided in the embodiments of the present invention will be described in detail.

[0045] refer to Figure 1 The diagram shown is a structural schematic of a voltage generation circuit provided in an embodiment of the present invention. The voltage generation circuit includes a bias current module 100 connected to the power supply voltage VIN, a response control module 200, a drive module 300, and a threshold reduction module 400, as well as an output voltage setting and sampling module 500.

[0046] The bias current module 100 is used to connect to a preset bias current IBIAS and mirror the preset bias current IBIAS to the response control module 200 and the threshold reduction module 400 according to their respective set ratios. The preset bias current IBIAS is used to control the transistor to operate in the subthreshold region.

[0047] The output voltage setting and sampling module 500 is used to collect the output voltage VOUT change of the output terminal of the voltage generation circuit and output the sampling result, and is also used to set the value of the target output voltage of the output terminal of the voltage generation circuit.

[0048] The response control module 200 is used to adjust the magnitude of the output current transmitted from the drive module 300 to the output terminal of the voltage generation circuit according to the output voltage setting and the sampling result output by the sampling module 500. Specifically, when the sampling result is that the output voltage VOUT is greater than the target output voltage, the output current is adjusted to decrease; and when the sampling result is that the output voltage VOUT is less than the target output voltage, the output current is adjusted to increase.

[0049] The threshold reduction module 400 is used to control the drive module 300 to provide the output current in response to the enable signal CLK when the power supply voltage VIN is lower than the set power supply voltage.

[0050] As is understood, the technical solution provided in this embodiment of the invention includes only a few simple modules in its voltage generation circuit, namely a bias current module connected to the power supply voltage, a response control module, a drive module, and a threshold reduction module, as well as an output voltage setting and sampling module. This demonstrates the simple structure of the voltage generation circuit, avoiding the problems associated with designing complex circuits. Furthermore, the preset bias current connected to the bias current module controls the transistor to operate in the subthreshold region, resulting in low circuit power consumption. The output voltage setting and sampling module can set the target output voltage value, improving the circuit's application flexibility. The response control module can adjust the output current generated by the drive module based on the sampling results output by the output voltage setting and sampling module, achieving loop control and current regulation. This not only ensures high output voltage stability of the voltage generation circuit but also improves the circuit's dynamic response speed. Moreover, the threshold reduction module can control the drive module to provide output current even when the power supply voltage is lower (i.e., lower than the set voltage), giving the voltage generation circuit a wider input voltage range.

[0051] The specific component composition and working principle of the voltage generation circuit provided in the embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. (Reference) Figure 2The diagram shows a schematic of another voltage generation circuit provided in an embodiment of the present invention. The bias current module 100 provided in this embodiment includes a first P-type transistor P1, a second P-type transistor P2, a first N-type transistor N1, a second N-type transistor N2, and a third N-type transistor N3. The first terminal of the first N-type transistor N1, the gate of the first N-type transistor N1, and the gate of the second N-type transistor N2 are all connected to the preset bias current IBIAS. The second terminals of the first N-type transistor N1, the second N-type transistor N2, and the third N-type transistor N3 are all electrically connected to the ground terminal GND. The first terminals of the first P-type transistor P1 and the second P-type transistor P2 are both connected to the power supply voltage VIN. The second terminals of the first P-type transistor P1, the gate of the first P-type transistor P1, and the gate of the second P-type transistor P2 are all electrically connected to the first terminal of the second N-type transistor N2. The first terminal and the gate of the third N-type transistor N3 are both electrically connected to the second terminal of the second P-type transistor P2.

[0052] like Figure 2 As shown, the response control module 200 provided in this embodiment of the invention includes: a third P-type transistor P3, a fourth N-type transistor N4, and a fifth N-type transistor N5. The first terminal of the third P-type transistor P3 is connected to the power supply voltage VIN. The gate of the third P-type transistor P3 is electrically connected to the gate of the second P-type transistor P2. The second terminal of the third P-type transistor P3 is electrically connected to the first terminal of the fifth N-type transistor N5. The second terminal of the fifth N-type transistor N5 is electrically connected to the first terminal of the fourth N-type transistor N4. The gates of both the fourth N-type transistor N4 and the fifth N-type transistor N5 are electrically connected to the gate of the third N-type transistor N3. The second terminal of the fourth N-type transistor N4 is electrically connected to the ground terminal GND.

[0053] like Figure 2As shown, the threshold reduction module 400 provided in this embodiment of the invention includes: a fourth P-type transistor P4, a fifth P-type transistor P5, a sixth N-type transistor N6, and a seventh N-type transistor N7. The first terminals of the fourth P-type transistor P4 and the fifth P-type transistor P5 are both connected to the power supply voltage VIN. The gate of the fourth P-type transistor P4, the second terminal of the fourth P-type transistor P4, and the second terminal of the fifth P-type transistor P5 are all electrically connected to the first terminal of the seventh N-type transistor N7. The gates of the fifth P-type transistor P5 and the seventh N-type transistor N7 are both connected to the enable signal CLK. The second terminal of the seventh N-type transistor N7 is electrically connected to the first terminal of the sixth N-type transistor N6. The gate of the sixth N-type transistor N6 is electrically connected to the gate of the second N-type transistor N2. The second terminal of the sixth N-type transistor N6 is electrically connected to the ground terminal GND.

[0054] like Figure 2 As shown, the driving module 300 provided in this embodiment of the invention includes a sixth P-type transistor P6. The first terminal of the sixth P-type transistor P6 is connected to the power supply voltage VIN. The gate of the sixth P-type transistor P6 is electrically connected to the first terminal of the fifth N-type transistor N5. The substrate of the sixth P-type transistor P6 is electrically connected to the second terminal of the fourth P-type transistor P4. The second terminal of the sixth P-type transistor P6 is electrically connected to the output terminal of the voltage generation circuit.

[0055] like Figure 2 As shown, the output voltage setting and sampling module 500 provided in this embodiment of the invention includes: an eighth N-type transistor N8 and a ninth N-type transistor N9; the first terminal and the gate of the eighth N-type transistor N8 are both electrically connected to the output terminal of the voltage generating circuit, the first terminal and the gate of the ninth N-type transistor N9 are both electrically connected to the second terminal of the eighth N-type transistor N8, and the second terminal of the ninth N-type transistor N9 is electrically connected to the first terminal of the fourth N-type transistor N4.

[0056] It is understood that the preset bias current provided in this embodiment of the invention is input to the first N-type transistor, wherein the preset bias current value can be in the nA range, thereby enabling the first N-type transistor and other transistors to operate in the subthreshold region. Compared with the existing circuits using uA-level current, the preset bias current provided by this invention is greatly reduced, resulting in a reduction in the overall power consumption of the circuit. The preset bias current is mirrored to the branches of the second N-type transistor and the sixth N-type transistor according to a set ratio; the current at the second N-type transistor flows through the first P-type transistor, and the current at the first P-type transistor is mirrored to the branches of the second P-type transistor and the third P-type transistor according to a set ratio; and the current at the second P-type transistor flows through the third N-type transistor, and the current at the third N-type transistor is mirrored to the branch of the fourth N-type transistor according to a set ratio to obtain current I1, where I1 = I2 + I3, I2 is the current at the third P-type transistor, I3 is the current in the branches of the eighth N-type transistor and the ninth N-type transistor, and the current I3 in the branches of the eighth N-type transistor and the ninth N-type transistor is the sampling result output by the output voltage setting and sampling module.

[0057] The response control module provided in this embodiment of the invention consists of a third P-type transistor branch and a fourth N-type transistor branch. The first terminal (drain) of the fourth N-type transistor is electrically connected to the second terminal (source) of the ninth P-type transistor to obtain current I3. The second terminal (drain) of the third P-type transistor is electrically connected to the gate of the sixth P-type transistor, thereby controlling the gate voltage of the sixth P-type transistor and controlling the magnitude of its output current. The response control module, driving module, and output voltage setting and sampling module provided in this embodiment of the invention form a current loop, with currents I1 and I2 remaining constant as mirrored currents. When the output voltage of the voltage generation circuit increases, the current I3 increases, which is fed back to the current I1, causing the voltage at the first terminal of the fourth N-type transistor to increase. The fifth N-type transistor and the fourth N-type transistor share a common gate, amplifying the voltage change at the first terminal of the fourth N-type transistor and feeding it back to the gate of the sixth P-type transistor, causing the gate voltage of the sixth P-type transistor to increase and the gate-source voltage of the sixth P-type transistor to decrease, thus reducing the output current of the sixth P-type transistor and ultimately lowering the output voltage of the voltage generation circuit. Furthermore, when the output voltage of the voltage generation circuit decreases, the current I3 decreases, which is fed back to the current I1, causing the voltage at the first terminal of the fourth N-type transistor to decrease. The fifth N-type transistor and the fourth N-type transistor share a common gate, amplifying the voltage change at the first terminal of the fourth N-type transistor and feeding it back to the gate of the sixth P-type transistor. This causes the gate voltage of the sixth P-type transistor to decrease, the gate-source voltage of the sixth P-type transistor to increase, and the output current of the sixth P-type transistor to increase. Ultimately, this raises the output voltage of the voltage generation circuit. Thus, when the output voltage of the voltage generation circuit changes, the current loop can quickly adjust the output voltage to restore it to the target output voltage, ensuring high circuit stability.

[0058] The threshold voltage reduction module provided in this embodiment of the invention, when the power supply voltage is greater than the set power supply voltage and the voltage generation circuit is working normally, controls the seventh N-type transistor to turn off and controls the fifth P-type transistor to turn on, thereby achieving the purpose of keeping the threshold voltage reduction module off. When the power supply voltage is less than the set power supply voltage, the enable signal controls the seventh N-type transistor to turn on and controls the fifth P-type transistor to turn off. The gate voltage of the fourth P-type transistor provides a voltage to the substrate of the sixth P-type transistor, so that the voltage of the substrate of the sixth P-type transistor is lower than the power supply voltage by the gate-source voltage of the sixth P-type transistor. The decrease in the substrate voltage of the sixth P-type transistor reduces the threshold voltage of the sixth P-type transistor, and thus enables the sixth P-type transistor to turn on and generate output current when the power supply voltage is even lower.

[0059] The output voltage setting and sampling module provided in this embodiment of the invention includes an eighth N-type transistor and a ninth N-type transistor for sampling. Furthermore, since the eighth N-type transistor and the ninth N-type transistor are also electrically connected to a fourth N-type transistor, the fourth N-type transistor is also used to set the target output voltage. That is, the output voltage is set by the gate-source voltage VGS_N8 of the eighth N-type transistor, the gate-source voltage VGS_N9 of the ninth N-type transistor, and the drain-source voltage VDS_N4 of the fourth N-type transistor, as follows:

[0060] When the power supply voltage VIN ≥ VGS_N8 + VGS_N9 + VDS_N4:

[0061] Output voltage = VGS_N8 + VGS_N9 + VDS_N4

[0062] Furthermore, when the power supply voltage VIN < VGS_N8 + VGS_N9 + VDS_N4, the output voltage follows the power supply voltage VIN, that is, the output voltage = VIN. In this way, the target output voltage can be flexibly set by adjusting the gate-source voltage VGS_N8 of the eighth N-type transistor, the gate-source voltage VGS_N9 of the ninth N-type transistor, and the drain-source voltage VDS_N4 of the fourth N-type transistor.

[0063] refer to Figure 3 The diagram shown is a structural schematic of another voltage generation circuit provided in an embodiment of the present invention. The voltage generation circuit provided in this embodiment of the present invention further includes a Miller compensation capacitor C1. The first plate of the Miller compensation capacitor C1 is electrically connected to the gate of the sixth P-type transistor P6, and the second plate of the Miller compensation capacitor C1 is electrically connected to the output terminal of the voltage generation circuit.

[0064] Furthermore, the voltage generating circuit provided in this embodiment of the invention further includes a filter capacitor C2, the first plate of the filter capacitor C2 being electrically connected to the output terminal of the voltage generating circuit, and the second plate of the filter capacitor C2 being electrically connected to the ground terminal GND.

[0065] It is understood that the Miller compensation capacitor provided in this embodiment of the invention can assist the fifth N-type transistor in adjusting the gate voltage of the sixth P-type transistor by increasing and decreasing it; that is, when the fifth N-type transistor controls the gate voltage of the sixth P-type transistor to increase, the Miller compensation capacitor can assist in increasing the gate voltage of the sixth P-type transistor; and when the fifth N-type transistor controls the gate voltage of the sixth P-type transistor to decrease, the Miller compensation capacitor can assist in decreasing the gate voltage of the sixth P-type transistor, thereby improving the effect of controlling the gate voltage of the sixth P-type transistor. Furthermore, the filter capacitor can filter the output voltage at the output terminal of the voltage generation circuit, improving the output effect of the voltage generation circuit. Optionally, the output terminal of the voltage generation circuit provided in this embodiment of the invention is electrically connected to a load module, wherein the load module can be a resistive load, a capacitive load, or a current load, etc., and this invention does not impose specific limitations on this.

[0066] The embodiments of the present invention do not impose specific limitations on the composition of the output voltage setting and sampling module, which, in addition to being able to... Figure 2 The circuit shown includes two N-type transistors connected together, but other circuit structures are also possible. Specifically, as shown... Figure 4 The diagram shows a schematic of an output voltage setting and sampling module according to an embodiment of the present invention. The output voltage setting and sampling module 500 includes a seventh P-type transistor P7 and a tenth N-type transistor N10. The first terminal of the seventh P-type transistor P7 is electrically connected to the output terminal of the voltage generation circuit. The second terminal of the seventh P-type transistor P7, the gate of the seventh P-type transistor P7, the first terminal of the tenth N-type transistor N10, and the gate of the tenth N-type transistor N10 are all electrically connected. The second terminal of the tenth N-type transistor N10 is electrically connected to the first terminal of the fourth N-type transistor.

[0067] Or refer to Figure 5 The diagram shows another output voltage setting and sampling module provided in an embodiment of the present invention. The output voltage setting and sampling module 500 includes an eighth P-type transistor P8 and a first NPN transistor 501. The first terminal of the eighth P-type transistor P8 is electrically connected to the output terminal of the voltage generation circuit. The second terminal of the eighth P-type transistor P8, the gate of the eighth P-type transistor P8, the first terminal of the first NPN transistor 501, and the base of the first NPN transistor 501 are all electrically connected. The second terminal of the first NPN transistor 501 is electrically connected to the first terminal of the fourth N-type transistor.

[0068] Or refer to Figure 6 The diagram shown is a structural schematic of another output voltage setting and sampling module provided in an embodiment of the present invention. The output voltage setting and sampling module 500 includes: a diode 503 and a second NPN transistor 502.

[0069] The anode of the diode 503 is electrically connected to the output terminal of the voltage generating circuit. The first terminal and the base of the second NPN transistor 502 are both electrically connected to the cathode of the diode 503. The second terminal of the second NPN transistor 502 is electrically connected to the first terminal of the fourth N-type transistor.

[0070] Accordingly, embodiments of the present invention also provide an electronic device, which includes the voltage generating circuit provided in any of the above embodiments.

[0071] It should be noted that the embodiments of the present invention do not impose specific restrictions on the specific type of electronic device, which should be selected according to the actual application.

[0072] This invention provides a voltage generation circuit and electronic device, including a bias current module connected to a power supply voltage, a response control module, a drive module, and a threshold reduction module, as well as an output voltage setting and sampling module. The voltage generation circuit has a simple structure. The preset bias current connected to the bias current module can control the transistor to operate in the subthreshold region, resulting in low circuit power consumption. The output voltage setting and sampling module can set the target output voltage value, improving the application flexibility of the circuit. The response control module can adjust the output current generated by the drive module based on the sampling results output by the output voltage setting and sampling module, achieving loop control current regulation. This not only ensures high output voltage stability of the voltage generation circuit but also improves the dynamic response speed of the circuit. Furthermore, the threshold reduction module can control the drive module to provide output current even when the power supply voltage is lower, giving the voltage generation circuit a wider input voltage range.

[0073] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A voltage generating circuit, characterized by comprising: The bias current module, the response control module, the driving module and the threshold reduction module are connected to the power supply voltage, and the output voltage setting and sampling module is connected to the output terminal of the voltage generating circuit. The bias current module is used to access a preset bias current and mirror the preset bias current to the response control module and the threshold reduction module according to a respective setting ratio, wherein the preset bias current is used to control the transistor to work in a sub-threshold region. The output voltage setting and sampling module is used to collect the output voltage variation of the output terminal of the voltage generating circuit and output a sampling result, and set the value of the target output voltage of the output of the output terminal of the voltage generating circuit. The response control module is used to adjust the size of the output current transmitted by the driving module to the output terminal of the voltage generating circuit according to the sampling result output by the output voltage setting and sampling module, wherein the sampling result is that the output voltage is greater than the target output voltage, and the output current is adjusted to be reduced; and the sampling result is that the output voltage is less than the target output voltage, and the output current is adjusted to be increased. The threshold reduction module is used to control the driving module to provide the output current in response to an enable signal when the power supply voltage is lower than a set power supply voltage.

2. The voltage generating circuit according to claim 1, characterized by, The bias current module includes a first P-type transistor, a second P-type transistor, a first N-type transistor, a second N-type transistor and a third N-type transistor. The first end of the first N-type transistor, the gate of the first N-type transistor and the gate of the second N-type transistor are connected to the preset bias current, and the second end of the first N-type transistor, the second end of the second N-type transistor and the second end of the third N-type transistor are electrically connected to the ground terminal. The first ends of the first P-type transistor and the second P-type transistor are connected to the power supply voltage, the second end of the first P-type transistor, the gate of the first P-type transistor and the gate of the second P-type transistor are electrically connected to the first end of the second N-type transistor. The first end of the third N-type transistor and the gate of the third N-type transistor are electrically connected to the second end of the second P-type transistor.

3. The voltage generating circuit according to claim 2, characterized by The response control module includes a third P-type transistor, a fourth N-type transistor and a fifth N-type transistor. The first end of the third P-type transistor is connected to the power supply voltage, the gate of the third P-type transistor is electrically connected to the gate of the second P-type transistor, and the second end of the third P-type transistor is electrically connected to the first end of the fifth N-type transistor. The second end of the fifth N-type transistor is electrically connected to the first end of the fourth N-type transistor, the gate of the fourth N-type transistor and the gate of the fifth N-type transistor are electrically connected to the gate of the third N-type transistor, and the second end of the fourth N-type transistor is electrically connected to the ground terminal.

4. The voltage generating circuit according to claim 3, characterized by The threshold reduction module includes a fourth P-type transistor, a fifth P-type transistor, a sixth N-type transistor and a seventh N-type transistor. The first end of the fourth P-type transistor and the first end of the fifth P-type transistor are connected to the power supply voltage, the gate of the fourth P-type transistor, the second end of the fourth P-type transistor and the second end of the fifth P-type transistor are electrically connected to the first end of the seventh N-type transistor, and the gate of the fifth P-type transistor and the gate of the seventh N-type transistor are connected to the start signal. The second end of the seventh N-type transistor is electrically connected to the first end of the sixth N-type transistor, the gate of the sixth N-type transistor is electrically connected to the gate of the second N-type transistor, and the second end of the sixth N-type transistor is electrically connected to the ground.

5. The voltage generating circuit according to claim 4, characterized by The driving module comprises a sixth P-type transistor, the first end of the sixth P-type transistor is connected to the power supply voltage, the gate of the sixth P-type transistor is electrically connected to the first end of the fifth N-type transistor, the substrate of the sixth P-type transistor is electrically connected to the second end of the fourth P-type transistor, and the second end of the sixth P-type transistor is electrically connected to the output end of the voltage generating circuit.

6. The voltage generating circuit according to claim 5, characterized by The voltage generating circuit further comprises a Muller compensation capacitor, the first plate of the Muller compensation capacitor is electrically connected to the gate of the sixth P-type transistor, and the second plate of the Muller compensation capacitor is electrically connected to the output end of the voltage generating circuit.

7. The voltage generating circuit according to claim 3, wherein The output voltage setting and sampling module comprises an eighth N-type transistor and a ninth N-type transistor. The first end of the eighth N-type transistor and the gate of the eighth N-type transistor are electrically connected to the output end of the voltage generating circuit, the first end of the ninth N-type transistor and the gate of the ninth N-type transistor are electrically connected to the second end of the eighth N-type transistor, and the second end of the ninth N-type transistor is electrically connected to the first end of the fourth N-type transistor.

8. The voltage generating circuit according to claim 3, wherein The output voltage setting and sampling module comprises a seventh P-type transistor and a tenth N-type transistor. The first end of the seventh P-type transistor is electrically connected to the output end of the voltage generating circuit, the second end of the seventh P-type transistor, the gate of the seventh P-type transistor, the first end of the tenth N-type transistor and the gate of the tenth N-type transistor are electrically connected, and the second end of the tenth N-type transistor is electrically connected to the first end of the fourth N-type transistor.

9. The voltage generating circuit according to claim 3, wherein The output voltage setting and sampling module comprises an eighth P-type transistor and a first NPN transistor. The first end of the eighth P-type transistor is electrically connected to the output end of the voltage generating circuit, the second end of the eighth P-type transistor, the gate of the eighth P-type transistor, the first end of the first NPN transistor and the base of the first NPN transistor are electrically connected, and the second end of the first NPN transistor is electrically connected to the first end of the fourth N-type transistor.

10. The voltage generating circuit according to claim 3, characterized by, The output voltage setting and sampling module comprises a diode and a second NPN transistor. The anode of the diode is electrically connected to the output end of the voltage generating circuit, the first end of the second NPN transistor and the base of the second NPN transistor are electrically connected to the cathode of the diode, and the second end of the second NPN transistor is electrically connected to the first end of the fourth N-type transistor.

11. The voltage generating circuit according to claim 1, wherein The voltage generating circuit further comprises a filter capacitor, a first plate of the filter capacitor is electrically connected to the output terminal of the voltage generating circuit, and a second plate of the filter capacitor is electrically connected to a ground terminal.

12. An electronic device, comprising: The electronic device comprises the voltage generating circuit according to any one of claims 1-11.

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