Aluminum alloy substrate processing methods and electronic equipment

By adding titanium to the aluminum alloy substrate to form titanium oxide and controlling thermal diffusion, the problem of large dimensional deformation after processing of the aluminum alloy substrate was solved, and the dimensional accuracy and structural yield of the aluminum alloy substrate and electronic equipment were improved.

CN116690207BActive Publication Date: 2026-05-26BEIJING XIAOMI MOBILE SOFTWARE CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING XIAOMI MOBILE SOFTWARE CO LTD
Filing Date
2022-02-28
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Aluminum alloy substrates suffer from significant deformation in critical dimensions after processing, affecting the structural shape and dimensional accuracy of electronic products.

Method used

By adding titanium to the aluminum alloy substrate, titanium oxide is formed to improve the material strength. The growth of the nanoscale second phase is inhibited by regulating the thermal diffusion of molecules, ensuring that the feature size of the initial substrate is larger than that of the target substrate. This results in a uniform distribution of internal stress after cold deformation, thus avoiding dimensional deformation.

Benefits of technology

It improves the dimensional accuracy and structural yield of aluminum alloy substrates and electronic devices, avoids dimensional deformation of aluminum alloy substrates after processing, and improves the precision of structural components of electronic devices.

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Abstract

This disclosure provides a method for processing aluminum alloy substrates and an electronic device. Titanium is added to the raw materials to enhance material strength after the formation of titanium oxide. Furthermore, titanium can suppress the growth of the nanoscale second phase and, by regulating the thermal diffusion of molecules, prevent the formation of sharp edges in the second phase particles, thereby avoiding stress concentration during subsequent extrusion deformation. In addition, the characteristic dimensions of the initial substrate are made larger than those of the target substrate during extrusion molding to ensure uniform stress distribution after subsequent cold deformation, preventing dimensional deformation of the aluminum alloy substrate after processing into structural components for electronic devices, and improving the dimensional accuracy and structural yield of both the aluminum alloy substrate and the electronic device.
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Description

Technical Field

[0001] This disclosure relates to the field of electronic equipment technology, specifically to a method for processing aluminum alloy substrates and an electronic device. Background Technology

[0002] Aluminum alloys possess excellent ductility, toughness, and machinability, and maintain good overall mechanical properties even after annealing. Fine polishing can also achieve a mirror-like high-gloss finish, making them suitable for applications requiring both performance and aesthetics in electronics, building materials, and transportation. However, in fields such as mobile phones, tablets, laptops, and wearable devices, aluminum alloys used as structural components suffer from significant deformation in critical dimensions after processing, affecting the structural shape and dimensional accuracy of these electronic products. Summary of the Invention

[0003] This disclosure provides an improved method for processing aluminum alloy substrates and an electronic device, which reduces the internal stress of the aluminum alloy substrate and improves the dimensional accuracy and structural yield of the aluminum alloy substrate and the electronic device.

[0004] The first aspect of this disclosure provides a method for processing an aluminum alloy substrate, the method comprising:

[0005] Obtain the first raw material in the preset proportion;

[0006] Add a predetermined proportion of titanium to the first raw material to obtain the second raw material, and then cast the second raw material into aluminum material to be processed.

[0007] The aluminum material to be processed is extruded to obtain an initial substrate, wherein the feature size of the initial substrate is larger than a preset value of the feature size of the target substrate;

[0008] The initial substrate is subjected to cold treatment to obtain the target substrate.

[0009] Optionally, the components of the first raw material include: aluminum, iron, silicon, copper, manganese, magnesium, chromium, zinc and titanium;

[0010] Of these components, iron comprises 0.04% by weight and 0.2% by weight; silicon comprises 0.5% by weight and 1% by weight; copper comprises 0.5% by weight and 1% by weight; manganese comprises 0.01% by weight and 0.5% by weight; magnesium comprises 0.5% by weight and 1.5% by weight; chromium comprises 0.01% by weight and 0.2% by weight; zinc comprises 0.01% by weight and 0.2% by weight; and titanium comprises 0.01% by weight and 0.2% by weight. The sum of the weight percentages of all components is 100%.

[0011] Optionally, a preset proportion of titanium is added to the first raw material, including adding a preset proportion of titanium wire to the first raw material by electromagnetic stirring before casting.

[0012] Optionally, the second raw material is cast into aluminum material to be processed, including:

[0013] The second raw material is subjected to homogenization, ingot composition and microstructure testing to obtain aluminum rods of the preset specifications;

[0014] The aluminum rod is subjected to homogenization annealing to obtain the aluminum material to be processed.

[0015] Optionally, the aluminum material to be processed is extruded to obtain an initial substrate, including:

[0016] Heat the aluminum material to be processed to a preset temperature;

[0017] The aluminum material to be processed is extruded at a speed greater than or equal to 5 m / min and less than or equal to 10 m / min to obtain the initial substrate.

[0018] Optionally, the initial substrate is subjected to cold treatment to obtain the target substrate, including:

[0019] The initial substrate is subjected to rapid cooling; wherein the rapid cooling rate is greater than or equal to 70°C / s;

[0020] After the initial substrate has been cooled, it is straightened with a preset stretching amount and then sawn to obtain the target substrate.

[0021] Optionally, after sawing to obtain the target substrate, the method further includes: aging the target substrate, wherein the aging treatment includes:

[0022] After preheating the aging equipment to the first temperature, place the target substrate inside;

[0023] When the temperature of the aging device reaches the second temperature, timing begins, and the target substrate is kept at the temperature for a first duration.

[0024] After adjusting the temperature of the aging equipment to the third temperature, start timing and keep the target substrate warm for a second duration.

[0025] Optionally, the components of the second raw material include aluminum, iron, silicon, copper, manganese, magnesium, chromium, zinc and titanium;

[0026] The components are: iron (weight percentage) greater than or equal to 0.04% and less than or equal to 0.2%; silicon (weight percentage) greater than or equal to 0.5% and less than or equal to 1%; copper (weight percentage) greater than or equal to 0.5% and less than or equal to 1%; manganese (weight percentage) greater than or equal to 0.01% and less than or equal to 0.5%; magnesium (weight percentage) greater than or equal to 0.5% and less than or equal to 1.5%; chromium (weight percentage) greater than or equal to 0.01% and less than or equal to 0.2%; zinc (weight percentage) greater than or equal to 0.01% and less than or equal to 0.2%; and titanium (weight percentage) greater than or equal to 0.1% and less than or equal to 1%. The sum of the weight percentages of all components is 100%.

[0027] Optionally, after obtaining the second raw material in a preset ratio, the process may also include:

[0028] The second raw material is put into the melting furnace for melting, and then undergoes refining and degassing, slag removal, composition inspection, billet alloying, pre-refining inspection, refining, slag removal, static furnace sampling inspection, slag removal, and refining.

[0029] Optionally, the refining and degassing adopts flux refining, and the covering agent used in the solvent refining method includes: NaCl, KCl, Na3AlF6 and CaF2;

[0030] The composition includes 35% NaCl by weight, 54% KCl by weight, 5.3% Na3AlF6 by weight, and 5.7% CaF2 by weight.

[0031] Optionally, the feature size of the initial substrate is 5% larger than the feature size of the target substrate.

[0032] According to a second aspect of this disclosure, an electronic device is provided, the electronic device comprising: a device body and a device housing assembled on the device body, the device housing being obtained using any of the aluminum alloy substrate processing methods described in the first aspect.

[0033] Optionally, the device housing includes a mid-frame.

[0034] The technical solution provided in this disclosure can achieve at least the following beneficial effects:

[0035] The raw materials disclosed herein include titanium to enhance material strength after the formation of titanium oxide. Titanium also inhibits the growth of the nanoscale second phase and, by regulating molecular thermal diffusion, prevents sharp edges in the second phase particles, thereby avoiding stress concentration during subsequent extrusion deformation. Furthermore, by ensuring that the characteristic dimensions of the initial substrate are larger than those of the target substrate during extrusion molding, uniform stress distribution is ensured after subsequent cold deformation. This prevents dimensional deformation of the aluminum alloy substrate after processing into structural components for electronic devices, improving the dimensional accuracy and structural yield of both the aluminum alloy substrate and the electronic devices.

[0036] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0037] Figure 1 This is a flowchart of an exemplary embodiment of the present disclosure of a method for processing an aluminum alloy substrate;

[0038] Figure 2 This is a flowchart of a method for processing an aluminum alloy substrate according to another exemplary embodiment of this disclosure;

[0039] Figure 3 This is a flowchart of a method for processing an aluminum alloy substrate according to yet another exemplary embodiment of this disclosure;

[0040] Figure 4 This is a flowchart of a method for processing an aluminum alloy substrate according to another exemplary embodiment of the present disclosure. Detailed Implementation

[0041] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure.

[0042] The terminology used in this disclosure is for the purpose of describing particular embodiments only and is not intended to limit the disclosure. Unless otherwise defined, the technical or scientific terms used in this disclosure should be understood in their ordinary sense by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “a” or “one,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one, which will be separately stated if referring only to “a.” “A plurality” or “several” means two or more. Unless otherwise indicated, the terms “front,” “rear,” “lower,” and / or “upper,” “top,” “bottom,” and similar terms are for ease of description only and are not limited to a location or spatial orientation. The terms “comprising” or “including,” and similar terms, mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, but do not exclude other elements or objects. The word “connection” or “link” is not limited to physical or mechanical connections, but can also include electrical connections, whether direct or indirect.

[0043] Aluminum alloys possess excellent ductility, toughness, and machinability, and maintain good overall mechanical properties even after annealing. Fine polishing can also achieve a mirror-like high-gloss finish, making them suitable for applications requiring both performance and aesthetics in electronics, building materials, and transportation. However, in fields such as mobile phones, tablets, laptops, and wearable devices, aluminum alloys used as structural components suffer from significant deformation in critical dimensions after processing, affecting the structural shape and dimensional accuracy of these electronic products.

[0044] This disclosure provides a method for processing aluminum alloy substrates. Figure 1 This is a flowchart of a method for processing an aluminum alloy substrate according to an exemplary embodiment of this disclosure, such as... Figure 1 As shown, the above method can be implemented through the following steps:

[0045] In step S101, the first raw material with a preset ratio is obtained.

[0046] It should be noted that 99.7% industrial pure aluminum, alloy scrap, etc., can be used as the primary raw material. Furthermore, the above processing method can be applied to 6-series aluminum alloys, especially 6013 wrought aluminum alloys. The components of the primary raw material can include one or more of the following: aluminum, iron, silicon, copper, manganese, magnesium, chromium, zinc, and titanium. The weight percentage of iron can be greater than or equal to 0.04% and less than or equal to 0.2%; the weight percentage of silicon can be greater than or equal to 0.5% and less than or equal to 1%; the weight percentage of copper can be greater than or equal to 0.5% and less than or equal to 1%; the weight percentage of manganese can be greater than or equal to 0.01% and less than or equal to 0.5%; the weight percentage of magnesium can be greater than or equal to 0.5% and less than or equal to 1.5%; the weight percentage of chromium can be greater than or equal to 0.01% and less than or equal to 0.2%; the weight percentage of zinc can be greater than or equal to 0.01% and less than or equal to 0.2%; the weight percentage of titanium can be greater than or equal to 0.01% and less than or equal to 0.2%; the sum of the weight percentages of all components is 100%.

[0047] Furthermore, the weight percentage of iron may include 0.12%; the weight percentage of silicon may be greater than or equal to 0.66% and less than or equal to 0.86%; the weight percentage of copper may be greater than or equal to 0.60% and less than or equal to 0.80%; the weight percentage of manganese may be greater than or equal to 0.04% and less than or equal to 0.25%; the weight percentage of magnesium may be greater than or equal to 0.85% and less than or equal to 1.05%; the weight percentage of chromium may include 0.04%; the weight percentage of zinc may include 0.04%; the weight percentage of titanium may include 0.05%; and the weight percentage of other components may include 0.1%.

[0048] In step S102, a preset proportion of titanium is added to the first raw material to obtain the second raw material, and the second raw material is cast into aluminum material to be processed.

[0049] The second raw material may include one or more of the following: aluminum, iron, silicon, copper, manganese, magnesium, chromium, zinc, and titanium, with the sum of the weight percentages of each component being 100%. The weight percentage of iron may be greater than or equal to 0.04% and less than or equal to 0.2%; the weight percentage of silicon may be greater than or equal to 0.5% and less than or equal to 1%; the weight percentage of copper may be greater than or equal to 0.5% and less than or equal to 1%; the weight percentage of manganese may be greater than or equal to 0.01% and less than or equal to 0.5%; the weight percentage of magnesium may be greater than or equal to 0.5% and less than or equal to 1.5%; the weight percentage of chromium may be greater than or equal to 0.01% and less than or equal to 0.2%; the weight percentage of zinc may be greater than or equal to 0.01% and less than or equal to 0.2%; and the weight percentage of titanium may be greater than or equal to 0.1% and less than or equal to 1%.

[0050] Furthermore, the weight percentage of iron may include 0.12%; the weight percentage of silicon may be greater than or equal to 0.66% and less than or equal to 0.86%; the weight percentage of copper may be greater than or equal to 0.60% and less than or equal to 0.80%; the weight percentage of manganese may be greater than or equal to 0.04% and less than or equal to 0.25%; the weight percentage of magnesium may be greater than or equal to 0.85% and less than or equal to 1.05%; the weight percentage of chromium may include 0.04%; the weight percentage of zinc may include 0.04%; the weight percentage of titanium may include 0.5%; and the weight percentage of other components may include 0.15%.

[0051] In step S103, the aluminum material to be processed is extruded to obtain an initial substrate, and the feature size of the initial substrate is larger than the preset value of the feature size of the target substrate.

[0052] The characteristic dimension can refer to the dimensions that describe the structure of the initial substrate and the target substrate. When the initial substrate and the target substrate are sheet materials, the characteristic dimensions of the initial substrate and the target substrate can be their length and width. In some embodiments, the characteristic dimension of the initial substrate can be greater than a preset value of the characteristic dimension of the target substrate, which can be 5% of the characteristic dimension of the target substrate. For example, the target substrate is 100 mm long and 50 mm wide, and the initial substrate can be 105 mm long and 52.5 mm wide.

[0053] In step S104, the initial substrate is subjected to cold treatment to obtain the target substrate.

[0054] The addition of titanium to the raw materials used in processing equipment housings enhances material strength by forming titanium oxides. Titanium also inhibits the growth of the nanoscale second phase and regulates molecular thermal diffusion to prevent sharp edges in the second phase particles, thus avoiding stress concentration during subsequent extrusion deformation. Furthermore, by ensuring that the characteristic dimensions of the initial substrate are larger than those of the target substrate during extrusion molding, uniform stress distribution is ensured after subsequent cold deformation. This prevents dimensional deformation of the aluminum alloy substrate after processing into structural components for electronic devices, improving the dimensional accuracy and structural yield of both the aluminum alloy substrate and the electronic equipment.

[0055] In some embodiments, adding a predetermined proportion of titanium to the first raw material includes: adding a predetermined proportion of titanium wire to the first raw material by electromagnetic stirring before casting, so as to form titanium oxide and improve the material strength. Titanium can also inhibit the growth of the nanoscale second phase and, by regulating the thermal diffusion of molecules, avoid the formation of sharp edges in the second phase particles, thereby preventing the concentration of internal stress during subsequent extrusion deformation.

[0056] Before casting, it is necessary to perform functional checks on the casting equipment, pre-casting debugging of the filter box, and pre-cast melt temperature monitoring. Titanium wire is then added according to the actual weight using electromagnetic stirring before casting. The diameter of the titanium wire can be 1.5mm to facilitate electromagnetic stirring and the formation of titanium oxides.

[0057] In the above embodiments, the second raw material is cast into aluminum material to be processed. First, the second raw material is subjected to homogenization, ingot composition, and microstructure testing to obtain an aluminum rod of a predetermined specification. Then, the aluminum rod undergoes homogenization annealing to obtain the aluminum material to be processed.

[0058] Figure 2 This is a flowchart of a method for processing an aluminum alloy substrate according to another exemplary embodiment of this disclosure. Figure 2 In the illustrated embodiment, the initial substrate is obtained by extruding the aluminum material to be processed, which can be achieved through the following steps:

[0059] In step S201, the aluminum material to be processed is heated to a preset temperature.

[0060] In step S202, the aluminum material to be processed is extruded at a speed greater than or equal to 5 m / min and less than or equal to 10 m / min to obtain an initial substrate.

[0061] The preset temperature range can be 530℃ to 550℃. An extrusion die is developed according to the required size and shape, and the aluminum material to be processed is extruded at a speed greater than or equal to 5 m / min and less than or equal to 10 m / min using an extruder of appropriate tonnage. In some embodiments, the extrusion ratio can also be ensured to be greater than or equal to 30 and less than or equal to 60 to complete the extrusion of the aluminum material to be processed, thereby obtaining the initial substrate. By controlling the extrusion speed and extrusion ratio as described above, the internal stress of the initial substrate is reduced.

[0062] Figure 3 This is a flowchart of a method for processing an aluminum alloy substrate according to yet another exemplary embodiment of this disclosure. For example... Figure 3 In the illustrated embodiment, cold treatment of the initial substrate to obtain the target substrate can be achieved through the following steps:

[0063] In step S301, the initial substrate is rapidly cooled.

[0064] It should be noted that the cooling rate of rapid cooling can be greater than or equal to 70℃ / s. Rapid cooling processes can include one or more methods such as water cooling, air cooling, and natural cooling. When a rapid cooling process includes at least two of these methods, comprehensive temperature reduction can be achieved. When rapid cooling is achieved through the simultaneous action of water cooling and air cooling, a suitable cooling effect can be obtained.

[0065] In step S302, the cooled initial substrate is straightened with a preset stretching amount and then sawn to obtain the target substrate.

[0066] In this process, the initial substrate is cooled to room temperature and then cold-deformed to achieve the desired dimensions, ensuring a uniform distribution of internal stress within the target substrate and reducing stress release after processing. Furthermore, this temperature change ensures that the local diffusion of the second-phase particles and the extrusion deformation are compatible, while also allowing for further thermal motion of the second-phase particles and dislocation pile-ups after extrusion deformation, thereby reducing internal stress.

[0067] It should be noted that the above-mentioned preset stretch amount can be greater than or equal to 1.0% and less than or equal to 1.5%.

[0068] In the above embodiments, after the target substrate is obtained by sawing, the target substrate can also be subjected to aging treatment. Figure 4 This is a flowchart of a method for processing an aluminum alloy substrate according to another exemplary embodiment of this disclosure. Figure 4 In the illustrated embodiment, aging treatment of the target substrate can be achieved through the following steps:

[0069] In step S401, after the aging equipment is preheated to the first temperature, the target substrate is placed in it.

[0070] The first temperature can be greater than or equal to 170℃ and less than or equal to 195℃.

[0071] In step S402, timing begins after the temperature of the aging device reaches the second temperature, and the target substrate is kept warm for a first duration.

[0072] The second temperature can be greater than or equal to 190℃ and less than or equal to 195℃, and the first duration can be greater than or equal to 8h and less than or equal to 16h.

[0073] In step S403, the temperature of the aging equipment is adjusted to the third temperature and the timing is started to keep the target substrate warm for a second time.

[0074] This step can be used as a secondary aging process. The second temperature can be greater than or equal to 170℃ and less than or equal to 175℃, and the second duration can be greater than or equal to 8h and less than or equal to 16h.

[0075] In the above embodiments, after aging treatment of the target substrate, a forced air cooling process can be used to cool the target substrate to room temperature. Subsequent heat treatment can then be used to eliminate the generated internal stress.

[0076] Specifically, in one embodiment, the aging furnace can first be heated to 170°C to 195°C, and then the sawn target substrate can be placed inside. Timing begins when the temperature rises back to the target temperature, maintaining the temperature at 190°C to 195°C for 8 to 16 hours. Then, the temperature is raised or lowered to 170°C to 175°C for a second-stage aging treatment, maintaining this temperature for another 8 to 16 hours. Finally, a forced air cooling process is used to cool the substrate to room temperature.

[0077] In some embodiments, after obtaining the second raw material in a preset proportion, the process further includes feeding the second raw material into a melting furnace for melting, and then performing refining and degassing, slag removal, composition inspection, billet alloying, pre-refining inspection, refining, slag removal, furnace sampling inspection, slag removal, and refining. Sampling and testing are performed after slag removal and refining, followed by settling and strict control of the melting temperature.

[0078] It should be noted that refining and degassing can be performed using flux refining, while the covering agent used in solvent refining includes NaCl, KCl, Na3AlF6, and CaF2. Specifically, NaCl comprises 35% by weight, KCl 54% by weight, Na3AlF6 5.3% by weight, and CaF2 5.7% by weight.

[0079] This disclosure further provides an electronic device, which includes: a device body and a device housing assembled on the device body, wherein the device housing is obtained by the above-described aluminum alloy substrate processing method.

[0080] It should be noted that the aforementioned electronic devices can be mobile phones, tablets, in-vehicle terminals, wearable devices, etc., and this disclosure does not limit this. The device housing can be the mid-frame of electronic devices such as mobile phones, tablets, in-vehicle terminals, and wearable devices. The aluminum alloy substrate processing method of this disclosure can optimize the deformation of the mobile phone mid-frame from the source of strain, i.e., during the processing of the aluminum alloy substrate. Before processing the mid-frame, the aluminum alloy substrate processing method of this disclosure can prevent the problem of large deformation after processing, avoiding the problem in related technologies where only the deformation dimensions of the mid-frame and other device housings can be improved subsequently, without the ability to prevent it in advance.

[0081] The addition of titanium to the raw materials used in processing equipment housings enhances material strength by forming titanium oxides. Titanium also inhibits the growth of the nanoscale second phase and regulates molecular thermal diffusion to prevent sharp edges in the second phase particles, thus avoiding stress concentration during subsequent extrusion deformation. Furthermore, by ensuring that the characteristic dimensions of the initial substrate are larger than those of the target substrate during extrusion molding, uniform stress distribution is ensured after subsequent cold deformation. This prevents dimensional deformation of the aluminum alloy substrate after processing into structural components for electronic devices, improving the dimensional accuracy and structural yield of both the aluminum alloy substrate and the electronic equipment.

[0082] The above description is merely a preferred embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A method for processing aluminum alloy substrates, characterized in that, The method includes: Obtain the first raw material in the preset proportion; Add a predetermined proportion of titanium to the first raw material to obtain the second raw material, and then cast the second raw material into aluminum material to be processed. The aluminum material to be processed is extruded to obtain an initial substrate, wherein the feature size of the initial substrate is larger than a preset value of the feature size of the target substrate; The initial substrate is subjected to cold treatment to obtain the target substrate; The initial substrate is subjected to cold treatment to obtain the target substrate, including: After the initial substrate has been straightened with a preset stretching amount, it is then sawn to obtain the target substrate. After sawing to obtain the target substrate, the method further includes: aging the target substrate, which includes: After preheating the aging equipment to the first temperature, place the target substrate inside; When the temperature of the aging device reaches the second temperature, timing begins, and the target substrate is kept at the temperature for a first duration. After adjusting the temperature of the aging equipment to the third temperature, timing is started, and the target substrate is kept at this temperature for a second duration. After aging treatment, the target substrate is cooled to room temperature using a forced air cooling process.

2. The aluminum alloy substrate processing method according to claim 1, characterized in that, The components of the first raw material include: aluminum, iron, silicon, copper, manganese, magnesium, chromium, zinc and titanium; Of these components, iron comprises 0.04% by weight and 0.2% by weight; silicon comprises 0.5% by weight and 1% by weight; copper comprises 0.5% by weight and 1% by weight; manganese comprises 0.01% by weight and 0.5% by weight; magnesium comprises 0.5% by weight and 1.5% by weight; chromium comprises 0.01% by weight and 0.2% by weight; zinc comprises 0.01% by weight and 0.2% by weight; and titanium comprises 0.01% by weight and 0.2% by weight. The sum of the weight percentages of all components is 100%.

3. The aluminum alloy substrate processing method according to claim 1, characterized in that, Adding a predetermined proportion of titanium to the first raw material includes: adding a predetermined proportion of titanium wire to the first raw material by electromagnetic stirring before casting.

4. The aluminum alloy substrate processing method according to claim 1, characterized in that, The second raw material is cast into aluminum material to be processed, including: The second raw material is subjected to homogenization, ingot composition and microstructure testing to obtain aluminum rods of the preset specifications; The aluminum rod is subjected to homogenization annealing to obtain the aluminum material to be processed.

5. The aluminum alloy substrate processing method according to claim 1, characterized in that, The aluminum material to be processed is extruded to obtain an initial substrate, including: Heat the aluminum material to be processed to a preset temperature; The aluminum material to be processed is extruded at a speed greater than or equal to 5 m / min and less than or equal to 10 m / min to obtain the initial substrate.

6. The method for processing aluminum alloy substrates according to claim 1, characterized in that, The initial substrate is subjected to cold treatment to obtain the target substrate, including: The initial substrate is subjected to rapid cooling; wherein the rapid cooling rate is greater than or equal to 70°C / s.

7. The method for processing aluminum alloy substrates according to claim 1, characterized in that, The components of the second raw material include aluminum, iron, silicon, copper, manganese, magnesium, chromium, zinc and titanium; Of these components, iron comprises 0.04% by weight and 0.2% by weight; silicon comprises 0.5% by weight and 1% by weight; copper comprises 0.5% by weight and 1% by weight; manganese comprises 0.01% by weight and 0.5% by weight; magnesium comprises 0.5% by weight and 1.5% by weight; chromium comprises 0.01% by weight and 0.2% by weight; zinc comprises 0.01% by weight and 0.2% by weight; and titanium comprises 0.1% by weight and 1% by weight. The sum of the weight percentages of all components is 100%.

8. The method for processing aluminum alloy substrates according to claim 1, characterized in that, After obtaining the second raw material in the preset proportion, the process also includes: The second raw material is put into the melting furnace for melting, and then undergoes refining and degassing, slag removal, composition inspection, billet alloying, pre-refining inspection, refining, slag removal, static furnace sampling inspection, slag removal, and refining.

9. The method for processing aluminum alloy substrates according to claim 8, characterized in that, The refining and degassing process employs a flux refining method, while the covering agent used in the solvent refining method includes: NaCl, KCl, Na3AlF6, and CaF2. The weight percentages of NaCl are 35%, KCl is 54%, Na3AlF6 is 5.3%, and CaF2 is 5.7%.

10. The method for processing aluminum alloy substrates according to claim 1, characterized in that, The feature size of the initial substrate is 5% larger than the feature size of the target substrate.

11. An electronic device, characterized in that, include: The equipment body and the equipment housing assembled on the equipment body, wherein the equipment housing is obtained by the aluminum alloy substrate processing method as described in any one of claims 1 to 10.

12. The electronic device according to claim 11, characterized in that, The device housing includes a middle frame.