Component-in-board substrate and method of manufacturing the same

Abstract

A component-embedded substrate (1) in which an electronic component (2) is embedded, the electronic component (2) having a first connection terminal (2a) on one face and a second connection terminal (2b) on the other face, wherein the component-embedded substrate (1) includes: a metal block (3) having electrical conductivity and heat conductivity, one face of which is connected to the first connection terminal (2a), and the dimension in the face direction is larger than that of the electronic component (2); an intermediate connection portion (4) provided side by side with the electronic component (2), including a first insulating layer (R1) and a first wiring layer (W1), the first wiring layer (W1) being connected to one face of the metal block (3) via a first via (V1); a second insulating layer (R2) in which the metal block (3) is housed; and a third insulating layer (R3) laminated on the second insulating layer (R2) to bury the electronic component (2), a second wiring layer (W2) being laminated on the third insulating layer (R3). The second wiring layer (W2) is connected to the first wiring layer (W1) via a second via (V2), and is connected to the second connection terminal (2b) of the electronic component (2) via a third via (V3).

Description

Technical Field

[0001] This invention relates to a component-embedded substrate and its manufacturing method. Background Technology

[0002] In printed circuit boards with surface-mounted heat-generating components, it is known to have a structure in which the heat-generating component and a heat sink are respectively disposed on two sides of the substrate, for example, by sandwiching a heat transfer member configured to penetrate the substrate. According to this structure, the heat generated by the heat-generating component mounted on one side of the substrate can be transferred via the heat transfer member to the heat sink disposed on the other side of the substrate for heat dissipation. In this case, the heat transfer member forming the heat dissipation path between the heat-generating component and the heat sink is formed, for example, a metal sheet made of copper. This makes it easier to ensure the cross-sectional area of ​​the heat dissipation path compared to forming multiple thermal vias, and also enables effective heat dissipation even when the heat generated by the heat-generating component is relatively large.

[0003] Among the heat-generating components mentioned above, the demand for miniaturization of electronic components such as inverters and converters has increased in recent years due to the improvement in switching speed. Therefore, if the power components used in these electronic components can be built into printed circuit boards, similar to existing component-integrated substrates, in addition to saving mounting space and miniaturizing the substrate, the influence of wiring resistance and reactance components can be reduced by shortening the wiring length, thereby improving electrical performance.

[0004] On the other hand, in existing component-integrated substrates, electrode terminals on one side of the electronic component are generally connected to conductive patterns formed on the substrate via conductive vias. However, when an electronic component with electrode terminals on both sides is integrated into the substrate, conductive vias for signal transmission and reception must be formed on both sides of the electronic component, and a heat dissipation mechanism that effectively dissipates heat using heat transfer components cannot be introduced.

[0005] Therefore, in the prior art disclosed in Patent Document 1, a heat transfer member that contacts the entire bottom surface of the built-in electronic component is embedded in the substrate of the component in such a way as a conductive layer extending to the back side of the substrate. Thus, this prior art enables the electrode terminals provided on the bottom surface of the electronic component to conduct to the conductive layer on the back side of the substrate via the heat transfer member, and ensures an effective heat dissipation path from the entire bottom surface of the electronic component through the heat transfer member to the conductive layer on the back side of the substrate. Therefore, according to this prior art, even when an electronic component with electrode terminals formed on both sides is built-in, heat dissipation characteristics can be improved.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent No. 6716045. Summary of the Invention

[0009] The problem that the invention aims to solve

[0010] However, in the aforementioned prior art, when the electrode terminals on the bottom surface of the built-in electronic components are made to conduct to the conductive layer on the surface of the substrate, a through hole must be formed to conduct from the conductive layer on the back of the substrate to the conductive layer on the surface of the substrate. The increased proprietary area of ​​the through hole and the increased wiring length may hinder the miniaturization and noise reduction of the substrate.

[0011] The present invention is made in view of the following circumstances, and its object is to provide a component-embedded substrate and a method for manufacturing the component-embedded substrate, which enables miniaturization and low noise even when the electronic component is embedded in a substrate that can effectively dissipate heat and has electrode terminals on both sides, and enables the electrode terminals on both sides to be connected to a conductive layer.

[0012] Methods for solving problems

[0013] To achieve the above objectives, the component-embedded substrate of the present invention embeds an electronic component. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The component-embedded substrate comprises: a metal block having electrical and thermal conductivity, one side of which is connected to the first connection terminal of the electronic component, and its dimension along the surface direction is larger than that of the electronic component; an intermediate connection portion arranged parallel to the electronic component along the surface direction, comprising a first insulating layer and a first wiring layer, the first wiring layer being connected to the one side of the metal block via a first conductive via penetrating the first insulating layer; a second insulating layer housing the metal block; and a third insulating layer stacked on the second insulating layer to embed the electronic component, the third insulating layer having a second wiring layer stacked thereon; the second wiring layer comprising: a first terminal conductive portion connected to the first wiring layer via a second conductive via penetrating the third insulating layer; and a second terminal conductive portion connected to the second connection terminal of the electronic component via a third conductive via penetrating the third insulating layer.

[0014] Furthermore, the manufacturing method of the component-embedded substrate of the present invention is a method for manufacturing a component-embedded substrate in which an electronic component is embedded. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The manufacturing method of the component-embedded substrate includes: a block preparation step, which prepares a metal block having electrical and thermal conductivity, and whose dimension along the surface direction is larger than that of the electronic component; an intermediate connection step, in which the first connection terminal of the electronic component is connected to one side of the metal block, and a first insulating layer and a first wiring layer are stacked parallel to the electronic component along the surface direction, and the connection is achieved by penetrating the... The process includes: a first conductive via of the first insulating layer connecting to the first wiring layer; a receiving step, in which the metal block is received in the second insulating layer; a stacking step, in which the third insulating layer and the second wiring layer are stacked on the second insulating layer to embed the electronic component; and a via connection step, wherein the via connection step forms on the second wiring layer: a first terminal conductive portion, the first terminal conductive portion being connected to the first wiring layer through a second conductive via penetrating the third insulating layer; and a second terminal conductive portion, the second terminal conductive portion being connected to the second connection terminal of the electronic component through a third conductive via penetrating the third insulating layer.

[0015] Furthermore, the manufacturing method of the component-embedded substrate of the present invention is a method for manufacturing a component-embedded substrate in which an electronic component is embedded. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The manufacturing method of the component-embedded substrate includes: a block preparation step, preparing a metal block having conductivity and thermal conductivity, and whose dimension along the surface direction is larger than that of the electronic component; an embedding step, forming a second insulating layer and an inner wiring layer to embed the metal block; and an intermediate connection step, separating a portion of the inner wiring layer opposite to the metal block into a first wiring layer by patterning, and setting a first conductive path connecting the first wiring layer to one side of the metal block. The process includes: a via; a component housing process, in which a portion of one side of the metal block is exposed by countersinking, and the electronic component is housed in such a way that the first connecting terminal contacts the metal block; a stacking process, in which a third insulating layer and a second wiring layer are stacked on the inner wiring layer to embed the electronic component; and a via connection process, wherein the via connection process forms on the second wiring layer: a first terminal conductive portion, the first terminal conductive portion being connected to the first wiring layer through a second conductive via penetrating the third insulating layer; and a second terminal conductive portion, the second terminal conductive portion being connected to the second connecting terminal of the electronic component through a third conductive via penetrating the third insulating layer.

[0016] Invention Effects

[0017] According to the present invention, a component-embedded substrate and a method for manufacturing the component-embedded substrate are provided. The component-embedded substrate can achieve miniaturization and low noise even when the electronic component built into the substrate that can effectively dissipate heat has electrode terminals on both sides, and can make the electrode terminals on both sides conductive with a conductive layer. Attached Figure Description

[0018] Figure 1 This is a cross-sectional view showing the component-embedded substrate of the first embodiment.

[0019] Figure 2 This is a cross-sectional view showing the block preparation process and intermediate connection process of the first embodiment.

[0020] Figure 3 This is a cross-sectional view showing the storage process of the first embodiment.

[0021] Figure 4 This is a cross-sectional view showing the lamination process of the first embodiment.

[0022] Figure 5 This is a cross-sectional view showing the through-hole connection process of the first embodiment.

[0023] Figure 6 This is a cross-sectional view of the component's built-in substrate, representing a comparative example.

[0024] Figure 7 This is a cross-sectional view showing the shape of the intermediate connecting part in the first modified example.

[0025] Figure 8 This is a cross-sectional view showing the shape of the intermediate connecting part in the second variation.

[0026] Figure 9 This is a cross-sectional view showing the shape of the intermediate connecting part in the third variation.

[0027] Figure 10 This is a cross-sectional view showing the block preparation process and the embedding process of the second embodiment.

[0028] Figure 11 This is a cross-sectional view showing the intermediate connection process in the second embodiment.

[0029] Figure 12 This is a cross-sectional view showing the component storage process of the second embodiment.

[0030] Figure 13 This is a cross-sectional view showing the lamination process of the second embodiment.

[0031] Figure 14 This is a cross-sectional view showing the through-hole connection process of the second embodiment.

[0032] Figure 15 This is a cross-sectional view showing the component-embedded substrate of the second embodiment. Detailed Implementation

[0033] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Furthermore, the present invention is not limited to the content described below, and can be arbitrarily modified and implemented without changing its spirit. Additionally, the accompanying drawings used to illustrate the embodiments are schematic representations of the constituent components, and some parts have been emphasized, enlarged, reduced, or omitted for the purpose of enhancing understanding; sometimes, the scale or shape of the constituent components is not accurately shown.

[0034] <First Implementation>

[0035] Figure 1 This is a cross-sectional view showing the component-integrated substrate 1 according to the first embodiment. The component-integrated substrate 1 is constructed by embedding the electronic component 2, the metal block 3, and the intermediate connecting portion 4 into a multilayer substrate composed of multiple insulating layers and wiring layers, and a heat sink 5 is provided as needed. The component-integrated substrate 1 can be used in various applications such as electronic devices such as mobile phones, laptops, and digital cameras, and control devices in various vehicle-mounted devices.

[0036] The following is for reference Figures 2 to 5 The manufacturing method of the component-embedded substrate 1 according to the first embodiment of the present invention will be described in detail. The manufacturing method of the component-embedded substrate 1 according to the first embodiment includes: a block preparation process, an intermediate connection process, a storage process, a lamination process, and a via connection process.

[0037] Figure 2 This is a cross-sectional view showing the block preparation process and intermediate connection process of the first embodiment. The electronic component 2, built into the component's built-in substrate 1, has a first connection terminal 2a on one side and a second connection terminal 2b on the other side. In this embodiment, the electronic component 2 is, for example, a so-called power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in inverters or converters, where the first connection terminal 2a serves as the drain and the two second connection terminals 2b serve as the gate and source, respectively.

[0038] In the manufacturing of the component-embedded substrate 1 in the first embodiment, a metal block 3 having electrical and thermal conductivity is first prepared (block preparation process). In this embodiment, the metal block 3 is a block of copper in the shape of a cuboid, and the dimension of the metal block 3 along the surface direction is set to be larger than that of the electronic component 2 when it is embedded in the substrate.

[0039] Furthermore, for one side of the prepared metal block 3, the intermediate connecting portion 4 is connected to the electronic component 2 side-by-side along the surface direction (intermediate connecting process). More specifically, a first insulating layer R1 and a first wiring layer W1 are stacked on the upper surface of the metal block 3, a countersunk hole Cb for housing the electronic component 2 is formed using a laser, and the first wiring layer W1 is connected to the metal block 3 through a first through-hole V1 penetrating the first insulating layer R1 to form the intermediate connecting portion 4. Additionally, the electronic component 2 is housed in the countersunk hole Cb such that its first connecting terminal 2a is connected to the metal block 3. The first connecting terminal 2a of the electronic component 2 is connected to the metal block 3 using an adhesive material (not shown) with excellent electrical and thermal conductivity, such as a high-temperature solder, conductive adhesive, or sintering agent.

[0040] In addition, in this embodiment, the intermediate connecting part 4 is provided on both sides in the surface direction to sandwich the electronic component 2, but it can also be provided on either side. In this case, the size of the metal block 3 in the surface direction can be reduced.

[0041] Furthermore, compared to the first insulating layer R1, the first wiring layer W1 has a patterned area that expands the spacing between it and the electronic component 2 in the surface direction, i.e., the gap G shown in the figure. Therefore, the first wiring layer W1 can prevent short circuits with the second connection terminal 2b even when the electronic component 2 is handling relatively large currents.

[0042] Figure 3 This is a cross-sectional view showing the storage process of the first embodiment. In the intermediate connection process, the metal block 3, which connects the electronic component 2 and the intermediate connection portion 4, is stored in a second insulating layer thicker than the metal block 3 (storage process). The second insulating layer has two panels, each of which has an outer wiring layer Wo that forms the outer pattern of the component's built-in substrate 1 and an inner wiring layer Wi that forms the inner pattern. More specifically, in the storage process, a storage portion Cs for storing the electronic component 2 is formed on a known copper clad laminate (CCL) that has undergone patterning, and the electronic component 2 is stored in the storage portion Cs on the temporary fixing strap 6.

[0043] Figure 4 This is a cross-sectional view showing the lamination process of the first embodiment. In the housing process, a second insulating layer R2 of the metal block 3 is stacked with a third insulating layer R3 and a second wiring layer W2 to embed the electronic component 2 connected to the metal block 3 (lamination process). In this process, for example, prepreg material is arranged across the electronic component 2, the intermediate connection portion 4, and the copper-clad laminate, and the lamination is formed by stacking copper foil and heating and pressing.

[0044] The gaps between the electronic component 2 and the intermediate connecting portion 4, as well as the gaps between the wall of the housing portion Cs and the metal block 3, are filled seamlessly by the inflow of prepreg material during the lamination process. Therefore, it is preferable to set these gaps as narrow as possible to avoid residual voids. In addition, the first insulating layer R1 of the intermediate connecting portion 4 is integrated with the surrounding structure by being formed of the same resin material as the second insulating layer R2 and the third insulating layer R3.

[0045] Figure 5 This is a cross-sectional view showing the via connection process of the first embodiment. A first terminal conductive portion P1 and a second terminal conductive portion P2 are formed by patterning the second wiring layer W2 formed in the lamination process (via the via connection process). The first terminal conductive portion P1 is connected to the first wiring layer W1 by forming a second conductive via V2; the second terminal conductive portion P2 is connected to the second connection terminal 2b of the electronic component 2 by forming a third conductive via V3. Thus, a conductive path is formed as follows: the second connection terminal 2b of the electronic component 2 is connected to the second terminal conductive portion P2 in the second wiring layer W2 via the third conductive via V3, and the first connection terminal 2a is also connected to the first terminal conductive portion P1 in the second wiring layer W2 via the metal block 3, the first conductive via V1, and the second conductive via V2.

[0046] In this embodiment, the conductive path formed by the first through-hole V1 and the second through-hole V2 is arranged on both sides in the surface direction, sandwiching the electronic component 2. Therefore, not only can the relatively large current flowing between the first connection terminal 2a of the electronic component 2 and the second wiring layer W2 be dispersed, but the heat transfer path from the electronic component 2 to the metal block 3 can also be expanded to both sides in the surface direction.

[0047] Then, the temporary fixing strip 6 is peeled off from the outer wiring layer Wo, and the heat sink 5 is installed on the exposed metal block 3 as needed, thus completing the process. Figure 1 The component shown has a built-in substrate 1.

[0048] Next, in view of the prior art related to the component-integrated heat dissipation substrate, a comparative example is given in which the outer wiring layer Wo and the second wiring layer W2 are connected by through holes, and the effect of the component-integrated substrate 1 of the present invention is explained. Figure 6 This is a cross-sectional view of the component's built-in substrate 1', which represents a comparative example.

[0049] In the comparative example's component-integrated substrate 1', the first connection terminal 2a of the built-in electronic component 2 is connected to the metal block 3, and the second connection terminal 2b is connected to the second wiring layer W2 via a connection via, which is the same as the component-integrated substrate 1 of the present invention. On the other hand, since the first connection terminal 2a of the comparative example's component-integrated substrate 1' is connected to the outer wiring layer Wo via the metal block 3, a conductive path from the first connection terminal 2a to the second wiring layer W2 is provided by forming a via TH connecting the outer wiring layer Wo and the second wiring layer W2.

[0050] However, the component-integrated substrate 1' in the comparative example hinders miniaturization because it requires a dedicated area to form the via TH. Furthermore, the increased wiring length of the conductive path may hinder noise reduction.

[0051] In contrast, such as Figure 1 As shown, in the component-integrated substrate 1 of the present invention, a metal block 3, whose dimension along the surface direction is larger than that of the electronic component 2, is integrated with the electronic component 2 as a heat transfer member. The second wiring layer W2 is connected to one surface of the metal block 3 through both a conductive path via the electronic component 2 and the third conductive via V3, and a conductive path via the first conductive via V1 and the second conductive via V2. Therefore, the component-integrated substrate 1 forms an effective heat dissipation path from the electronic component 2 through the metal block 3, and enables the first connection terminal 2a, which contacts the metal block 3 inside the substrate, to conduct to the second wiring layer W2 via a space-saving and short wiring length through a conductive path, which is composed of the metal block 3, the first conductive via V1, and the second conductive via V2.

[0052] Therefore, according to the first embodiment of the present invention, even when the electronic component 2 built into the substrate capable of effective heat dissipation has a first connection terminal 2a and a second connection terminal 2b on both sides, it is possible to achieve miniaturization and low noise, and to enable the electrode terminals on both sides to be connected to the second wiring layer W2.

[0053] In addition, the component's built-in substrate 1 is through Figure 2 In the intermediate connection process shown, the height of the first wiring layer W1 is pre-aligned with the upper surface of the second connection terminal 2b of the electronic component 2, thereby enabling... Figure 5 In the via connection process shown, the distance from the first wiring layer W1 to the second wiring layer W2 is set to be the same as the distance from the second connection terminal 2b of the electronic component 2 to the second wiring layer W2. Therefore, in the via connection process, since the second via V2 formed from the second wiring layer W2 to the first wiring layer W1 and the third via V3 formed from the second wiring layer W2 to the second connection terminal 2b are aligned with the same length, vias can be formed easily and with high precision, thereby improving quality.

[0054] Alternatively, the component's built-in substrate 1 can be constructed via... Figure 2 In the intermediate connection process shown, the upper surface of the first wiring layer W1 is made higher than the second connection terminal 2b of the electronic component 2, thereby connecting... Figure 4 In the lamination process shown, the distance between the first wiring layer W1 and the second wiring layer W2 is set to be shorter than the distance between the second connection terminal 2b of the electronic component 2 and the second wiring layer W2. Therefore, during the lamination process, when the third insulating layer R3 and the second wiring layer W2 are stacked on the electronic component 2 and the first wiring layer W1 and then heated and pressed, the stress on the electronic component 2 is reduced, thereby lowering the possibility of damage to the electronic component 2.

[0055] Furthermore, the component's built-in substrate 1 adjusts the thickness of the second insulating layer R2 or the metal block 3, while... Figure 3 In the storage process shown, the inner wiring layer Wi is pre-aligned with the upper surface of the first wiring layer W1 at a certain height, thereby... Figure 5 In the via connection process shown, the distance from the inner wiring layer Wi to the second wiring layer W2 is set to be the same as the distance from the first wiring layer W1 to the second wiring layer W2. Therefore, in the via connection process, since the second via V2 formed from the second wiring layer W2 to the first wiring layer W1 is aligned with the via formed from the second wiring layer W2 to the inner wiring layer Wi at the same length, vias can be formed easily and with high precision, thereby improving quality.

[0056] The aforementioned intermediate connecting part 4 can replace Figure 2 The intermediate connecting process shown can be changed into several different forms. For example, Figure 7 This is a cross-sectional view showing the shape of the intermediate connection portion 4 in the first modified example. In the first modified example, a first insulating layer R1 and a first wiring layer W1 are stacked on one side of the electronic component 2 along the surface direction on the upper surface of the metal block 3 to form an intermediate connection portion 4 with two first through holes V1 arranged side by side. Therefore, when forming the two first through holes V1 that disperse current, the process of separating the first insulating layer and the first wiring layer can be omitted.

[0057] in addition, Figure 8This is a cross-sectional view showing the shape of the intermediate connecting portion 4 in the second variation. In the second variation, in the intermediate connecting portion 4 formed on both sides of the electronic component 2, the first through-hole V1 is formed as a stacked through-hole consisting of a first micro-via V1a and a second micro-via V1b. Therefore, since the first micro-via V1a and the second micro-via V1b can be formed to be smaller than other through-holes, the intermediate connecting portion 4 can save space in the surface direction. In addition, the height of the first through-hole V1 can be easily adjusted by the number of stacked through-holes. Alternatively, the first through-hole V1 can also be an interlaced through-hole formed by connecting the first micro-via V1a and the second micro-via V1b in a staggered manner in the surface direction.

[0058] in addition, Figure 9 This is a cross-sectional view showing the shape of the intermediate connecting portion 4 in the third variation. In the third variation, the intermediate connecting portion 4 has a third wiring layer W3 at its boundary with the metal block 3, which is linked to the first wiring layer W1 and sandwiches the first insulating layer R1. Thus, the intermediate connecting portion 4 can be formed relatively easily by providing openings for housing the electronic component 2 on both panels of the finished product, and by connecting it to the metal block 3 together with the electronic component 2 using an adhesive material (not shown) such as high-temperature solder, conductive adhesive, or sintering agent.

[0059] <Second Implementation>

[0060] Next, a second embodiment of the present invention will be described. The component-integrated substrate 1 of the second embodiment differs from the manufacturing method of the component-integrated substrate 1 of the first embodiment described above. Hereinafter, the parts that differ from the first embodiment will be described, and for the same constituent elements as in the first embodiment, the same reference numerals will be used and detailed descriptions will be omitted.

[0061] The following is for reference Figures 10 to 14 The manufacturing method of the component-embedded substrate 1 according to the second embodiment of the present invention will be described in detail. The manufacturing method of the component-embedded substrate 1 according to the second embodiment includes: a block preparation process, an embedding process, an intermediate connection process, a component storage process, a lamination process, and a via connection process.

[0062] Figure 10 This is a cross-sectional view showing the block preparation process and the embedding process of the second embodiment. In the manufacturing of the component embedded substrate 1 of the second embodiment, firstly, a metal block 3 identical to that of the first embodiment is prepared (block preparation process), and a second insulating layer R2 and an inner wiring layer Wi are formed to embed the metal block 3 (embedding process).

[0063] More specifically, in the embedding process, an outer wiring layer Wo made of copper foil is placed on the temporary fixing strip 6, and resin material and copper foil are stacked on the basis of the metal block 3 and heated and pressed, thereby forming a second insulating layer R2 and an inner wiring layer Wi on which the metal block 3 is embedded.

[0064] Figure 11 This is a cross-sectional view showing the intermediate connection process of the second embodiment. During the embedding process, when the second insulating layer R2 and the inner wiring layer Wi are stacked on the metal block 3, the inner wiring layer Wi is patterned. At this time, a portion of the inner wiring layer Wi opposite the metal block 3 is separated into a first wiring layer W1 through patterning. Furthermore, an intermediate connection portion 4 (intermediate connection process) is formed by providing a first through-hole V1 connecting one surface of the first wiring layer W1 and the metal block 3.

[0065] Figure 12 This is a cross-sectional view showing the component storage process of the second embodiment. When the intermediate connecting portion 4 is formed in the intermediate connecting process, a portion of one side of the metal block 3 is exposed by countersinking, and the electronic component 2 is stored in such a way that the first connecting terminal 2a contacts the metal block 3 (component storage process). That is, in the part of the insulating layer directly above the metal block 3 where the intermediate connecting portion 4 is not provided, a countersinking portion Cb is formed using a laser. The electronic component 2 is connected to the metal block 3 in the countersinking portion Cb by an adhesive material (not shown) with excellent conductivity and thermal conductivity, such as a high-temperature solder, conductive adhesive, or sintering agent.

[0066] Figure 13 This is a cross-sectional view showing the lamination process of the second embodiment. When the electronic component 2 is housed in the countersunk hole portion Cb during the component housing process, a third insulating layer R3 and a second wiring layer W2 are laminated on the inner wiring layer Wi to embed the electronic component 2 (lamination process). In this process, for example, prepreg material is arranged across the electronic component 2, the first wiring layer W1, and the inner wiring layer Wi, and a laminate is formed by laminating copper foil and heating and pressing.

[0067] The gap between the electronic component 2 and the intermediate connecting part 4 is filled seamlessly by the inflow of prepreg material during the lamination process. Therefore, it is preferable to set this gap as narrow as possible to avoid residual voids.

[0068] Figure 14This is a cross-sectional view showing the via connection process of the second embodiment. By patterning the second wiring layer W2 formed in the lamination process, a first terminal conductive portion P1 and a second terminal conductive portion P2 are formed (via the via connection process). The first terminal conductive portion P1 is connected to the first wiring layer W1 through the formation of a second conductive via V2; the second terminal conductive portion P2 is connected to the second connection terminal 2b of the electronic component 2 through the formation of a third conductive via V3. Thus, the second connection terminal 2b of the electronic component 2 is connected to the second terminal conductive portion P2 in the second wiring layer W2 via the third conductive via V3, and a conductive path is formed where the first connection terminal 2a is also connected to the first terminal conductive portion P1 in the second wiring layer W2 via the metal block 3, the first conductive via V1, and the second conductive via V2.

[0069] Figure 15 This is a cross-sectional view showing the component-embedded substrate 1 of the second embodiment. When the connection of the second wiring layer is completed in the via connection process, the temporary fixing strip 6 is peeled off from the outer wiring layer Wo. After patterning the outer wiring layer Wo, a heat sink 5 is installed as needed, thereby completing the process. Figure 15 The component shown has a built-in substrate 1. In the patterning process, the portion of the outer wiring layer Wo that contacts the metal block 3 can be removed, but if the portion is made of the same material as the metal block 3, the two can be integrated into one metal block 3.

[0070] Therefore, the manufacturing method of the component-in-place substrate 1 according to the second embodiment of the present invention can construct a component-in-place substrate 1 that is substantially the same as that of the first embodiment described above. Even when the electronic component 2 built into a substrate that can effectively dissipate heat has a first connection terminal 2a and a second connection terminal 2b on both sides, it can achieve miniaturization and low noise, and can make the electrode terminals on both sides conductive with the second wiring layer W2.

[0071] <Embodiments of the Invention>

[0072] The first embodiment of the present invention has an embedded electronic component on a component-embedded substrate. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The embedded substrate includes: a metal block having electrical and thermal conductivity, one side of which is connected to the first connection terminal of the electronic component, and its dimension along the surface direction is larger than that of the electronic component; an intermediate connection portion arranged parallel to the electronic component along the surface direction, comprising a first insulating layer and a first wiring layer, the first wiring layer being connected to the one side of the metal block via a first conductive via penetrating the first insulating layer; a second insulating layer housing the metal block; and a third insulating layer stacked on top of the second insulating layer to embed the electronic component, and a second wiring layer stacked on top of the third insulating layer; the second wiring layer includes: a first terminal conductive portion connected to the first wiring layer via a second conductive via penetrating the third insulating layer; and a second terminal conductive portion connected to the second connection terminal of the electronic component via a third conductive via penetrating the third insulating layer.

[0073] In the component-integrated substrate of the first embodiment of the present invention, a metal block with a dimension larger than that of the electronic component along the surface direction is integrated with the electronic component as a heat transfer member. The second wiring layer is connected to one surface of the metal block through both a conductive path via the electronic component and a third conductive via, and a conductive path via a first conductive via and a second conductive via. Therefore, the component-integrated substrate forms an effective heat dissipation path from the electronic component through the metal block, and the first connection terminal that contacts the metal block inside the substrate can be connected to the second wiring layer via a conductive path with a space-saving and short wiring length. The conductive path is composed of the metal block, the first conductive via, and the second conductive via.

[0074] Therefore, according to the component-integrated substrate of the first embodiment of the present invention, even when the electronic component built into the substrate that can effectively dissipate heat has a first connection terminal and a second connection terminal on both sides, it can achieve miniaturization and low noise, and can make the electrode terminals on both sides conductive with the second conductive layer.

[0075] In the second embodiment of the present invention, the component-embedded substrate, in the first embodiment of the present invention described above, has a larger spacing between the first wiring layer and the electronic component in the surface direction than the spacing between the first insulating layer and the electronic component in the surface direction.

[0076] According to the component-integrated substrate of the second embodiment of the present invention, even if the gap is shortened in order to prevent the formation of a void in the gap between the electronic component and the intermediate connection portion, the first wiring layer and the electronic component can be configured to be fully separated in the surface direction. Therefore, short circuits between the second connection terminal of the electronic component and the first wiring layer can be prevented.

[0077] In the third embodiment of the present invention, the component-embedded substrate, in the first or second embodiment of the present invention described above, has a conductive path formed by the first and second conductive vias disposed on both sides in the surface direction in such a way that the electronic component is sandwiched between them.

[0078] According to the third embodiment of the present invention, the component-embedded substrate can not only disperse the relatively large current flowing between the first connection terminal of the electronic component and the second wiring layer into two conductive paths, but also expand the heat transfer path from the electronic component to the metal block to both sides in the surface direction.

[0079] In the fourth embodiment of the present invention, the component-embedded substrate, in any one of the first to third embodiments of the present invention described above, has the distance from the first wiring layer to the second wiring layer set to be the same as the distance from the second wiring layer to the second connection terminal of the electronic component.

[0080] According to the fourth embodiment of the present invention, the component-embedded substrate can easily and with high precision form vias because the second via formed from the second wiring layer to the first wiring layer and the third via formed from the second wiring layer to the second connection terminal are aligned with the same length, thereby improving the quality.

[0081] In the fifth embodiment of the present invention, the component-embedded substrate, in any one of the first to third embodiments of the present invention described above, has the distance from the first wiring layer to the second wiring layer set to be narrower than the distance from the second wiring layer to the second connection terminal of the electronic component.

[0082] According to the fifth embodiment of the present invention, since the second connection terminal of the electronic component is farther away from the second wiring layer than the first wiring layer, the stress on the electronic component is reduced when the third insulating layer and the second wiring layer are stacked on the electronic component and the first wiring layer and heated and pressed, thereby reducing the possibility of damage to the electronic component.

[0083] In the sixth embodiment of the present invention, the component-embedded substrate, in any one of the first to fifth embodiments of the present invention, has an inner wiring layer between the second insulating layer and the third insulating layer, and the distance from the inner wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the first wiring layer.

[0084] According to the sixth embodiment of the present invention, the component embedded substrate can easily and with high precision form vias because the second via formed from the second wiring layer to the first wiring layer is aligned with the via formed from the second wiring layer to the inner wiring layer with the same length, thereby improving the quality.

[0085] In the seventh embodiment of the present invention, the component-embedded substrate, in any one of the first to sixth embodiments of the present invention described above, the first through-hole is a stacked through-hole or an interleaved through-hole.

[0086] According to the seventh embodiment of the present invention, the component embedded substrate is formed by a first through-hole consisting of a plurality of through-holes, thereby enabling each through-hole to be formed in a smaller size. Therefore, in addition to saving space in the surface direction of the intermediate connection portion, the height of the first through-hole can be easily adjusted by stacking or interleaving the number of through-holes.

[0087] In the eighth embodiment of the present invention, a component-embedded substrate is provided with a third wiring layer at the boundary between the intermediate connecting portion and the metal block in any of the first to seventh embodiments of the present invention described above.

[0088] According to the eighth embodiment of the present invention, the component-embedded substrate can be formed relatively easily and inexpensively because the intermediate connecting portion can be composed of two finished panels that are connected to a metal block together with electronic components by, for example, adhesive material.

[0089] The ninth embodiment of the present invention discloses a method for manufacturing a component-embedded substrate, which is a method for manufacturing a component-embedded substrate in which an electronic component is embedded. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The method for manufacturing the component-embedded substrate includes: a block preparation step, in which a metal block having electrical and thermal conductivity and a dimension larger than that of the electronic component in the surface direction is prepared; and an intermediate connection step, in which the first connection terminal of the electronic component is connected to one side of the metal block, and a first insulating layer and a first wiring are stacked and arranged parallel to the electronic component in the surface direction. The process involves: a first insulating layer connected to the first wiring layer via a first through-hole penetrating the first insulating layer; a housing process where the metal block is housed in the second insulating layer; a stacking process where the third insulating layer and the second wiring layer are stacked on the second insulating layer to embed the electronic component; and a via connection process where a first terminal conductive portion and a second terminal conductive portion are formed on the second wiring layer, the first terminal conductive portion being connected to the first wiring layer via a second through-hole penetrating the third insulating layer; and the second terminal conductive portion being connected to the second connection terminal of the electronic component via a third through-hole penetrating the third insulating layer.

[0090] In the manufacturing method of the component-integrated substrate according to the ninth embodiment of the present invention, a metal block with a dimension larger than that of the electronic component in the surface direction is integrated with the electronic component as a heat transfer member. A second wiring layer is connected to one surface of the metal block via both a conductive path through the electronic component and a third via, and a conductive path through a first via and a second via. Therefore, in the manufacturing method of the component-integrated substrate, an effective heat dissipation path is formed from the electronic component through the metal block, and a first connection terminal in contact with the metal block inside the substrate is made conductive to the second wiring layer via a space-saving and short wiring length through a conductive path consisting of the metal block, the first via, and the second via.

[0091] Therefore, according to the manufacturing method of the component-integrated substrate according to the ninth embodiment of the present invention, even when the electronic component built into the substrate that can effectively dissipate heat has a first connection terminal and a second connection terminal on both sides, it is possible to achieve miniaturization and low noise, and to make the electrode terminals on both sides conductive with the second conductive layer.

[0092] In the tenth embodiment of the present invention, the method for manufacturing a component-embedded substrate, in the ninth embodiment of the present invention described above, wherein the spacing between the first wiring layer and the electronic component in the surface direction is set to be wider than the spacing between the first insulating layer and the electronic component in the surface direction.

[0093] According to the tenth embodiment of the present invention, the method for manufacturing a component-embedded substrate can shorten the gap in order to prevent the formation of a void in the gap between the electronic component and the first insulating layer, and can also fully separate the first wiring layer and the electronic component in the surface direction. Therefore, it is possible to manufacture a component-embedded substrate that prevents a short circuit between the second connection terminal of the electronic component and the first wiring layer.

[0094] In the eleventh embodiment of the present invention, the method for manufacturing a component-embedded substrate, in the ninth or tenth embodiment of the present invention described above, involves a conductive path formed by the first through-hole and the second through-hole being disposed on both sides in the surface direction such that the electronic component is sandwiched between them.

[0095] According to the eleventh embodiment of the present invention, the method for manufacturing a component-embedded substrate can not only disperse a relatively large current flowing between the first connection terminal and the second wiring layer of the electronic component into two conductive paths, but also expand the heat transfer path from the electronic component to the metal block to both sides in the surface direction.

[0096] In the manufacturing method of the component-embedded substrate according to the twelfth embodiment of the present invention, in any of the ninth to eleventh embodiments of the present invention described above, the distance from the first wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the second connection terminal of the electronic component.

[0097] According to the manufacturing method of the component-embedded substrate of the twelfth embodiment of the present invention, since the second via formed from the second wiring layer to the first wiring layer and the third via formed from the second wiring layer to the second connection terminal are aligned with the same length, vias can be formed easily and with high precision, thereby improving quality.

[0098] In the thirteenth embodiment of the present invention, the method for manufacturing a component-embedded substrate, in any of the ninth to eleventh embodiments of the present invention, sets the distance from the first wiring layer to the second wiring layer to be shorter than the distance from the second wiring layer to the second connection terminal of the electronic component.

[0099] According to the manufacturing method of the component-embedded substrate of the thirteenth embodiment of the present invention, since the second connection terminal of the electronic component is farther away from the second wiring layer than the first wiring layer, the stress on the electronic component is reduced when the third insulating layer and the second wiring layer are stacked on the electronic component and the first wiring layer and heated and pressed, thereby reducing the possibility of damage to the electronic component.

[0100] The fourteenth embodiment of the present invention provides a method for manufacturing a component-embedded substrate, wherein in any of the ninth to thirteenth embodiments of the present invention described above, an inner layer wiring layer is formed between the second insulating layer and the third insulating layer, and the distance from the inner layer wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the first wiring layer.

[0101] According to the fourteenth embodiment of the present invention, in the method for manufacturing a component-embedded substrate, since the second via formed from the second wiring layer to the first wiring layer is aligned with the via formed from the second wiring layer to the inner wiring layer by the same length, vias can be formed easily and with high precision, thereby improving quality.

[0102] In the manufacturing method of the component-embedded substrate according to the fifteenth embodiment of the present invention, in any one of the ninth to fourteenth embodiments of the present invention described above, the first through-hole is a stacked through-hole or an interleaved through-hole.

[0103] According to the manufacturing method of the component embedded substrate of the fifteenth embodiment of the present invention, by forming the first through-hole by a plurality of through-holes, each through-hole can be formed in a smaller size. Therefore, in addition to saving space in the surface direction of the intermediate connection process, the height of the first through-hole can be easily adjusted by stacking or interleaving the number of through-holes.

[0104] The method for manufacturing a component-embedded substrate according to the sixteenth embodiment of the present invention, in any one of the ninth to fifteenth embodiments of the present invention, involves providing a third wiring layer at the boundary between the metal block and the first insulating layer during the intermediate connection process.

[0105] According to the manufacturing method of the component-embedded substrate of the sixteenth embodiment of the present invention, in the intermediate connection process, since it can be formed by two panels that are finished products and connected to the metal block together with electronic components by adhesive material, for example, it can be formed relatively easily and cheaply.

[0106] The seventeenth embodiment of the present invention discloses a method for manufacturing a component-embedded substrate, which is a method for manufacturing a component-embedded substrate in which an electronic component is embedded. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The method for manufacturing the component-embedded substrate includes: a block preparation step, in which a metal block having electrical and thermal conductivity and a dimension larger than that of the electronic component in the surface direction is prepared; an embedding step, in which a second insulating layer and an inner wiring layer are formed to embed the metal block; and an intermediate connection step, in which a portion of the inner wiring layer opposite to the metal block is separated into a first wiring layer by patterning, and a connection is provided between the first wiring layer and one of the metal blocks. A first through-hole is used for surface connection; a receiving process is performed, in which a portion of one side of the metal block is exposed by countersinking, and the electronic component is received in such a way that the first connecting terminal contacts the metal block; a stacking process is performed, in which a third insulating layer and a second wiring layer are stacked on the inner wiring layer to embed the electronic component; a via connection process is performed, in which a first terminal conductive portion is formed on the second wiring layer, the first terminal conductive portion being connected to the first wiring layer through a second through-hole penetrating the third insulating layer; and a second terminal conductive portion, the second terminal conductive portion being connected to the second connecting terminal of the electronic component through a third through-hole penetrating the third insulating layer.

[0107] In the manufacturing method of the component-integrated substrate according to the seventeenth embodiment of the present invention, a metal block with a dimension larger than that of the electronic component in the surface direction is integrated as a heat transfer member together with the electronic component. A second wiring layer is connected to one surface of the metal block via both a conductive path through the electronic component and a third via, and a conductive path through a first via and a second via. Therefore, in the manufacturing method of the component-integrated substrate, an effective heat dissipation path is formed from the electronic component through the metal block, and a first connection terminal in contact with the metal block inside the substrate is made conductive to the second wiring layer via a space-saving and short wiring length through a conductive path consisting of the metal block, the first via, and the second via.

[0108] Therefore, according to the manufacturing method of the component-integrated substrate according to the seventeenth embodiment of the present invention, even when the electronic component built into the substrate that can effectively dissipate heat has a first connection terminal and a second connection terminal on both sides, it is possible to achieve miniaturization and low noise, and to make the electrode terminals on both sides conductive with the second conductive layer.

[0109] Explanation of reference numerals in the attached figures

[0110] 1. Component with built-in substrate

[0111] 2 Electronic components

[0112] 2a First connecting terminal

[0113] 2b Second connection terminal

[0114] 3 metal blocks

[0115] 4. Intermediate connecting part

[0116] 5. Radiator

[0117] 6. Temporary fixing straps

[0118] R1~R3 First Insulation Layer~Third Insulation Layer

[0119] V1~V3 First guide hole~Third guide hole

[0120] W1~W2 First Wiring Layer~Second Wiring Layer

[0121] P1 First terminal conductive part

[0122] P2 Second Terminal Conductive Section

[0123] Wo outer wiring layer

[0124] Wi inner wiring layer

[0125] G gap

[0126] Cb Countersunk section

[0127] Cs Storage Department

Claims

1. A component with a built-in substrate, wherein, The component has an embedded electronic component on its built-in substrate. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The component has a built-in substrate comprising: A metal block having electrical and thermal conductivity, one surface of which is connected to the first connection terminal of the electronic component, and the dimension along the surface direction is larger than that of the electronic component; An intermediate connection portion is arranged side by side with the electronic component in the surface direction, and includes a first insulating layer and a first wiring layer. The first wiring layer is connected to one surface of the metal block via a first through-hole penetrating the first insulating layer. A second insulating layer is provided to house the metal block. as well as A third insulating layer is stacked on top of the second insulating layer to embed the electronic component, and a second wiring layer is stacked on top of the third insulating layer. The second wiring layer includes: The first terminal conductive portion is connected to the first wiring layer via a second conductive hole that penetrates the third insulating layer. as well as The second terminal conductive portion is connected to the second connection terminal of the electronic component via a third conductive hole penetrating the third insulating layer.

2. The component with an embedded substrate according to claim 1, wherein, The spacing between the first wiring layer and the electronic component in the surface direction is greater than the spacing between the first insulating layer and the electronic component in the surface direction.

3. The component-embedded substrate according to claim 1, wherein, The conductive path formed by the first and second conductive holes is arranged on both sides in the surface direction, sandwiching the electronic component.

4. The component with a built-in substrate according to any one of claims 1 to 3, wherein, The distance from the first wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the second connection terminal of the electronic component.

5. The component with a built-in substrate according to any one of claims 1 to 3, wherein, The distance from the first wiring layer to the second wiring layer is set to be shorter than the distance from the second wiring layer to the second connection terminal of the electronic component.

6. The component with a built-in substrate according to any one of claims 1 to 3, wherein, An inner wiring layer is provided between the second insulating layer and the third insulating layer. The distance from the inner wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the first wiring layer.

7. The component with a built-in substrate according to any one of claims 1 to 3, wherein, The first via is a stacked via or an interleaved via.

8. The component with a built-in substrate according to any one of claims 1 to 3, wherein, A third wiring layer is provided at the boundary between the intermediate connecting part and the metal block.

9. A method for manufacturing a component with an embedded substrate, wherein, The component has an embedded electronic component on its built-in substrate. The electronic component has a first connection terminal on one side and a second connection terminal on the other side. The method for manufacturing the embedded substrate of the component includes: The block preparation process involves preparing a metal block that has electrical and thermal conductivity and whose dimensions along the surface direction are larger than those of the electronic component. In the intermediate connection process, for one side of the metal block, the first connection terminal of the electronic component is connected, and a first insulating layer and a first wiring layer are arranged side-by-side with the electronic component and stacked along the surface direction. The first wiring layer is connected through a first through-hole penetrating the first insulating layer. The storage process involves storing the metal block in the second insulating layer; In the lamination process, a third insulating layer and a second wiring layer are stacked on the second insulating layer to embed the electronic component; and In the via connection process, a first terminal conductive portion and a second terminal conductive portion are formed on the second wiring layer. The first terminal conductive portion is connected to the first wiring layer through a second conductive hole penetrating the third insulating layer; the second terminal conductive portion is connected to the second connection terminal of the electronic component through a third conductive hole penetrating the third insulating layer.

10. The method for manufacturing a component-embedded substrate according to claim 9, wherein, The spacing between the first wiring layer and the electronic component in the surface direction is set to be wider than the spacing between the first insulating layer and the electronic component in the surface direction.

11. The method for manufacturing a component-embedded substrate according to claim 9, wherein, The conductive path formed by the first and second conductive holes is arranged on both sides in the surface direction, sandwiching the electronic component.

12. The method for manufacturing a component-embedded substrate according to any one of claims 9 to 11, wherein, The distance from the first wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the second connection terminal of the electronic component.

13. The method for manufacturing a component-embedded substrate according to any one of claims 9 to 11, wherein, The distance from the first wiring layer to the second wiring layer is set to be shorter than the distance from the second wiring layer to the second connection terminal of the electronic component.

14. The method for manufacturing a component-embedded substrate according to any one of claims 9 to 11, wherein, An inner wiring layer is formed between the second insulating layer and the third insulating layer; The distance from the inner wiring layer to the second wiring layer is set to be the same as the distance from the second wiring layer to the first wiring layer.

15. A method for manufacturing a component-embedded substrate according to any one of claims 9 to 11, wherein, The first via is a stacked via or an interleaved via.

16. The method for manufacturing a component-embedded substrate according to any one of claims 9 to 11, wherein, In the intermediate connection process, a third wiring layer is provided at the boundary between the metal block and the first insulating layer.

17. A method for manufacturing a component-embedded substrate, wherein the component-embedded substrate is embedded in an electronic component having a first connection terminal on one side and a second connection terminal on the other side, wherein... The method for manufacturing the embedded substrate of the component includes: The block preparation process involves preparing a metal block that has electrical and thermal conductivity and whose dimensions along the surface direction are larger than those of the electronic component. The embedding process forms a second insulating layer and an inner wiring layer to embed the metal block; In the intermediate connection process, a portion of the inner wiring layer opposite the metal block is separated into a first wiring layer by patterning, and a first through hole is provided to connect the first wiring layer to one side of the metal block; In the component storage process, a portion of one side of the metal block is exposed by countersinking, and the electronic component is stored in such a way that the first connecting terminal contacts the metal block; In the lamination process, a third insulating layer and a second wiring layer are stacked on the inner wiring layer to embed the electronic component; and The via connection process is formed on the second wiring layer: A first terminal conductive portion, wherein the first terminal conductive portion is connected to the first wiring layer through a second conductive hole penetrating the third insulating layer; and The second terminal conductive part is connected to the second connection terminal of the electronic component through a third conductive hole penetrating the third insulating layer.

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