Ion beam jet angle control method, system, apparatus, and storage medium

Abstract

The application discloses an ion beam jetting angle control method, system, equipment and storage medium, and comprises the following steps: S1: acquiring and configuring a jetting scheme; S2: calculating a voltage change value based on the jetting scheme; and S3: periodically controlling voltage change based on the voltage change value. The application has the beneficial effect that the charged ions can be deflected at a preset angle by the action of the electric field force in the electric field.

Description

Technical Field

[0001] This invention relates to the field of ion beam jet control technology, and in particular to an ion beam jet angle control method, system, device and storage medium. Background Technology

[0002] An ion beam is a group of ions that move at approximately the same speed in almost the same direction. Ion beams are widely used in industrial processing.

[0003] In the prior art, the emission angle of the ion beam is changed by adjusting the emission of the ion beam. However, this method requires frequent movement of the ion generating device and cannot make precise adjustments to the fine angle. As a result, the ion beam cannot be deflected at a preset angle.

[0004] For example, a "gas jetting system for an ion beam device" disclosed in Chinese patent literature, publication number CN107924805A, application date August 17, 2016, can release the residual removal gas through the gas orifice in the gas distributor of the extraction plate. However, it has the problem that it cannot achieve the deflection of the jetted ion beam at a preset angle. Summary of the Invention

[0005] To address the shortcomings of existing technologies that cannot deflect the ejected ion beam at a preset angle, this invention proposes an ion beam ejection angle control method, system, device, and storage medium that can utilize the electric field force exerted on charged ions in an electric field to deflect the ejected ion beam at a preset angle.

[0006] Another objective of this invention is to acquire and configure a jetting scheme, which includes jetting angle, jetting speed, jetting direction, period step size, and deflection period. The control unit controls voltage changes and the corresponding positive electrode voltage value based on the voltage value of each deflection. The angle of ion beam scanning can be adjusted by providing different voltages through the control module.

[0007] The following is the technical solution of the present invention: a method for controlling the ion beam ejection angle, comprising the following steps:

[0008] S1: Obtain and configure the injection scheme;

[0009] S2: Calculate the voltage change value based on the injection scheme;

[0010] S3: Periodically control voltage changes based on voltage change values.

[0011] In this solution, a jetting scheme is obtained from a third-party platform or tailored to actual application requirements. After setting up the corresponding system, the voltage change value is calculated based on the configuration scheme. The voltage change is then periodically controlled based on this value. Since the electric field strength is related to the voltage applied to it, the scanning angle of the ion beam can be adjusted by providing different voltages. This allows the jetting ion beam to be deflected at a preset angle by utilizing the electric force exerted on charged ions in the electric field.

[0012] Preferably, in S1, the injection scheme includes injection angle, injection speed, injection direction, cycle step size, and deflection cycle.

[0013] In this scheme, the ejection velocity represents the ejection speed of the ion beam in the generating module, the ejection angle represents the angle covered by the ion beam, the deflection period represents the periodic time for the ion beam to complete the ejection angle, and the period step represents the time step of the ejected ion beam. Corresponding positive and negative polarity plates are set according to the ejection direction, and the voltage change is calculated based on the ejection angle, ejection velocity, period step, and deflection period. This scheme utilizes the electric field force exerted on charged ions in an electric field to deflect the ejected ion beam at a preset angle.

[0014] Preferably, in S2, the voltage value is calculated based on the injection angle, polarity plate length, injection speed, and distance between the positive and negative polarity plates, as shown in the following expression:

[0015]

[0016] In the above formula, This is the voltage value; Each electron carries a charge; It refers to the ion mass; The spray angle; The length of the polar plate; The jet speed; For the number of electrons; This represents the distance between the positive and negative polarity plates.

[0017] In this scheme, the voltage value is calculated based on the spray angle, polar plate length, spray speed, and distance between the positive and negative polar plates. This facilitates the calculation of voltage change based on the voltage value, thereby enabling the sprayed ion beam to deflect at a preset angle.

[0018] Preferably, in S2, the voltage change is calculated based on the voltage value, the period step size, and the deflection period, as shown in the following expression:

[0019]

[0020] In the above formula, This represents the voltage change value. Each electron carries a charge; It refers to the ion mass; The length of the polar plate; The jet speed; For the number of electrons; This represents the distance between the positive and negative polarity plates. The periodic step size; For the deflection period; This refers to the spray angle.

[0021] In this scheme, the voltage change value is calculated based on the voltage value, the period step size, and the deflection period, thereby enabling the jet ion beam to deflect at a preset angle.

[0022] Preferably, in S2, the first spray range and the second spray range are divided by the bisector of the spray angle. The first spray range is controlled by the negative polarity plate and the first positive polarity plate, and the second spray range is controlled by the negative polarity plate and the second positive polarity plate.

[0023] In this scheme, the first and second spray ranges are divided by a bisector of the spray angle. The first spray range is controlled by a negative polarity plate and a first positive polarity plate, while the second spray range is controlled by a negative polarity plate and a second positive polarity plate. When switching from the first to the second spray range, the voltage change values ​​of the negative and first positive polarity plates are decreased by a periodic step until they reach 0, and then increased by a periodic step. Conversely, when switching from the second to the first spray range, the voltage change values ​​of the negative and first positive polarity plates are decreased by a periodic step until they reach 0, and then increased by a periodic step. This control of voltage changes allows the sprayed ion beam to be deflected at a preset angle.

[0024] An ion beam ejection angle control system includes: a generation module, the generation module being connected to a transmission module, the transmission module being connected to a control module, and the control module being connected to a configuration acquisition module.

[0025] In this scheme, the generating module generates and ejects an ion beam to the transmission module. The transmission module combines the ion beam and transmits it to the end opening. Two positive polarity plates are alternately energized, deflecting the ion beam to the left or right, respectively. Since the electric field strength is related to the voltage applied to it, the configuration module acquires the ejection scheme and calculates the voltage value for each deflection based on the scheme. The control module can adjust the ion beam scanning angle by providing different voltages. This allows the ejected ion beam to be deflected at a preset angle by utilizing the electric force exerted on charged ions in an electric field.

[0026] Preferably, the first and second positive polarity plates of the control module are symmetrically distributed on both sides of the negative polarity plate.

[0027] In this design, there are two positive polarity plates and one negative polarity plate, with the two positive polarity plates symmetrically distributed on both sides of the negative polarity plate. When the two positive polarity plates alternately carry current, they are responsible for deflecting the ion beam to the left or to the right, respectively.

[0028] Preferably, the analog-to-digital conversion module of the control module is connected to the first positive plate, the second positive plate, the negative plate, and the control unit.

[0029] In this scheme, when the two positive polarity plates are energized in rotation, they are responsible for deflecting the ion beam to the left or to the right, respectively. The voltage of the voltage module is automatically controlled by the control unit to change periodically, so that the ejected ion beam can be deflected at a preset angle by utilizing the electric field force of charged ions in the electric field.

[0030] An apparatus includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement an ion beam ejection angle control method.

[0031] A storage medium storing a computer program that, when executed by a processor, implements a method for controlling the ion beam ejection angle.

[0032] The beneficial effect of this invention is that it can utilize the electric field force acting on charged ions in an electric field to deflect the jet ion beam at a preset angle. Attached Figure Description

[0033] Figure 1 A schematic diagram of an ion beam ejection angle control system according to the present invention.

[0034] Figure 2 This invention provides a schematic diagram of an ion beam ejection angle control system.

[0035] Figure 3 A flowchart of an ion beam ejection angle control method according to the present invention.

[0036] Figure 4 A graph showing the relationship between the injection time and the ion beam injection angle control method of the present invention.

[0037] Figure 5 The relationship between control voltage and time in an ion beam ejection angle control method of the present invention is shown in the figure.

[0038] Figure 6 The relationship between control voltage and jet angle in an ion beam jet angle control method of the present invention is shown in the figure.

[0039] In the diagram: 1. Generating module; 2. Transmission module; 3. Control module; 4. Configuration acquisition module; 31. Negative polarity plate; 32. First positive polarity plate; 33. Second positive polarity plate; 34. Digital-to-analog conversion module; 35. Control unit. Detailed Implementation

[0040] The technical solution of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings.

[0041] Example: Figure 1 As shown, an ion beam ejection angle control system includes:

[0042] Generation module 1 is used to generate and eject ion beams and is connected to transmission module 2.

[0043] Transmission module 2, used for beam combining and transmission of the ion beam, is connected to the generating module 1, and its end is located in the control module 3. Transmission module 2 is hollow inside and has a uniformly smooth inner wall.

[0044] Control module 3 is used to generate an electric field force. By utilizing the electric field force on charged ions, the jet ion beam can be deflected at the required angle. It is connected to transmission module 2.

[0045] The configuration module 4 is used to acquire the injection scheme and calculate the voltage value of each deflection based on the injection scheme, and is connected to the control module 3.

[0046] like Figure 2 As shown, there are two positive polarity plates and one negative polarity plate 31, with the two positive polarity plates symmetrically distributed on both sides of the negative polarity plate 31. The generating module 1 generates and ejects an ion beam to the transmission module 2. The transmission module 2 combines the ion beam and transmits it to the end opening. When the two positive polarity plates are energized alternately, they are responsible for deflecting the ion beam to the left or right, respectively. Since the electric field strength is related to the voltage applied to it, the scanning angle of the ion beam can be adjusted by providing different voltages through the control module 3. The deflection angle of the ions in the electric field formed by the positive and negative polarity plates 31 is shown. and electric field force Horizontal acceleration is generated, and the ion velocity is increased. Constantly increasing. Electric field force. and electric field strength Related to the electric charge carried by ions Determined by. Electricity. The electric field strength is related to the number of electrons gained or lost by the ion. Control module 3 includes a field module and a voltage module. The field module includes a negative polarity plate 31 and several positive polarity plates. The negative polarity plate 31 is located at the end of transmission module 2, and the several positive polarity plates are symmetrically distributed on both sides or around the negative polarity plate 31. The voltage module includes a control unit 35 and a digital-to-analog conversion module 34. The digital-to-analog conversion module 34 is equipped with a negative polarity interface and several positive polarity interfaces. The negative polarity interface is connected to the negative polarity plate 31, and the positive polarity interfaces are connected to the positive polarity plates. The electric field strength is related to the voltage applied to it, providing the voltage required for the ion beam at different angles. After calculating the voltage value for each deflection, configuration module 4 transmits the corresponding voltage value to control unit 35. Control unit 35 controls the voltage change and the corresponding positive polarity plate according to the voltage value for each deflection.

[0047] like Figure 3 As shown, an ion beam ejection angle control method includes the following steps:

[0048] S1: Obtain and configure the injection scheme;

[0049] S2: Calculate the voltage change value of the voltage module based on the injection scheme;

[0050] S3: Periodically control voltage changes based on voltage change values.

[0051] In step S1, a jetting scheme is obtained from a third-party platform or formulated according to actual application requirements. The main contents of the jetting scheme include the jetting angle of the ion beam. jet speed Injection direction and cycle step and deflection period The configuration includes a generation module 1, a field module, and a voltage module based on the injection scheme. The field module includes a negative polarity plate 31 and several positive polarity plates. The negative polarity plate 31 is located at the end of the transmission module 2, and the several positive polarity plates are symmetrically distributed on both sides or around the negative polarity plate 31. The voltage module includes a control unit 35 and a digital-to-analog converter module 34. The digital-to-analog converter module 34 is equipped with a negative polarity interface and several positive polarity interfaces. The negative polarity interface is connected to the negative polarity plate 31, and the positive polarity interfaces are connected to the positive polarity plates. If the injection direction of the ion beam is planar, that is, the ion beam is injected in a plane, then two positive polarity plates are evenly distributed on both sides of the negative polarity plate 31 on the plane.

[0052] In step S2, the voltage change value of the voltage module is calculated based on the injection scheme.

[0053] Specifically, since the ion beam moves left and right in the plane, the spray angle is determined with reference to the transmission module 2. Take half as the deflection angle Then the deflection angle .

[0054] Ion deflection angle, expressed as follows:

[0055]

[0056] In the above formula, For deflection angle, The transverse velocity of the ions. This represents the longitudinal velocity of the ions. That is, the jet speed.

[0057] Since the beam is combined by transmission module 2, the initial transverse velocity is 0. The expression for the transverse velocity of the ions is as follows:

[0058]

[0059] In the above formula, This refers to the transverse velocity of the ions; For acceleration; To speed up the process; Each electron carries a charge; Electric field strength; This refers to the ion mass.

[0060] Among them, based on the lengths of the positive polarity plate and the negative polarity plate 31 and ion longitudinal velocity Calculation acceleration time The expression is as follows:

[0061]

[0062] In the above formula, To speed up the process; The lengths of the positive and negative polarity plates 31; This represents the longitudinal velocity of the ions.

[0063] Since the substances that make up the ion beam are known, that is and Given quantities, electric field strength The expression is as follows:

[0064]

[0065] In the above formula, Each electron carries a charge; Electric field strength; It refers to the ion mass; The spray angle; The lengths of the positive and negative polarity plates 31; This represents the longitudinal velocity of the ions.

[0066] Based on the relationship between electric field strength and potential difference, the following equation can be obtained:

[0067]

[0068] In the above formula, This is the voltage value. This is the distance between the positive electrode plate and the negative electrode plate 31.

[0069] When it exists When there are one electron, the voltage value is expressed as follows:

[0070]

[0071] In the above formula, This is the voltage value; Each electron carries a charge; It refers to the ion mass; The spray angle; The lengths of the positive and negative polarity plates 31; This represents the longitudinal velocity of the ions. For the number of electrons; This is the distance between the positive electrode plate and the negative electrode plate 31.

[0072] Based on the period step and deflection period Calculate the deflection angle for each time The expression is as follows:

[0073]

[0074] In the above formula, For each deflection angle, For the periodic step size, For the deflection period, This refers to the spray angle.

[0075] Each deflection angle By substituting the voltage value into the voltage expression, the voltage value for each deflection can be obtained. The expression is as follows:

[0076]

[0077] In the above formula, This represents the voltage value for each deflection. Each electron carries a charge; It refers to the ion mass; The lengths of the positive and negative polarity plates 31; This represents the longitudinal velocity of the ions. For the number of electrons; This is the distance between the positive electrode plate and the negative electrode plate 31; For the periodic step size, For the deflection period, This refers to the spray angle.

[0078] In step S3, the voltage change is periodically controlled based on the voltage change value. A program is written using CNC programming or computer programming to initialize the corresponding parameters, such as the lengths of the positive and negative plates 31. jet speed Period step size and deflection period The voltage value for each deflection is automatically calculated based on step S2. The processor executes the program to obtain the cycle step. Change the corresponding voltage value The voltage is then transmitted to the control unit 35, which controls the voltage change and the corresponding positive plate voltage value based on the voltage value of each deflection.

[0079] The spray direction of the field module is in the same plane as the positive and negative polarity plates 31, with the negative polarity plate 31 located on the bisector of the spray angle. The bisector of the spray angle divides the area into a first spray range and a second spray range. The first spray range is controlled by the negative polarity plate 31 and the first positive polarity plate 32, while the second spray range is controlled by the negative polarity plate 31 and the second positive polarity plate 33. When switching from the first spray range to the second spray range, the voltage change values ​​of the negative polarity plate 31 and the first positive polarity plate 32 are decreased by a periodic step until they reach 0, and the voltage change values ​​of the negative polarity plate 31 and the second positive polarity plate 33 are increased by a periodic step. Conversely, when switching from the second spray range to the first spray range, the voltage change values ​​of the negative polarity plate 31 and the second positive polarity plate 33 are decreased by a periodic step until they reach 0, and the voltage change values ​​of the negative polarity plate 31 and the first positive polarity plate 32 are increased by a periodic step.

[0080] Detailed Implementation Plan

[0081] like Figures 4 to 6 As shown, based on the electric field force and Newton's second law, the expression is as follows:

[0082]

[0083] In the above formula, Electric force, in N; Each electron carries a charge, in units of ; Electric field strength, unit ; For ion mass, unit ; For acceleration, unit .

[0084] The expression for the transverse velocity of ions is as follows:

[0085]

[0086] In the above formula, Transverse velocity of ions, in units ; The initial transverse velocity of the ion, in units ; For acceleration, unit ; To speed up the process, the unit In this embodiment, since the ions passing through the end of the transmission module 2 do not have a lateral velocity, =0.

[0087] at this time,

[0088] Ion deflection angle, expressed as follows:

[0089]

[0090] In the above formula, For deflection angle, The transverse velocity of the ions. This represents the longitudinal velocity of the ions.

[0091] In this embodiment, when the electron is oxygen, ; =1.6 × 10 -19 ; Ion longitudinal velocity Greater than 20 and less than or equal to 100 For ease of description =100 .

[0092] The lengths of the positive and negative plates 31 Therefore, the time expression for ions in region 31 of the positive and negative polarity plates is as follows:

[0093] Second

[0094] at this time, ,Right now, .

[0095] Based on the relationship between electric field strength and potential difference, the following equation can be obtained:

[0096]

[0097] In the above formula, This is the voltage value. The distance is [distance]. In this embodiment, =0.1 meters.

[0098] In this embodiment, the required deflection angle is... The range is from 0° to 86°. The relationship between the deflection angle and the voltage value of the voltage module is shown in Table 1.

[0099] Table 1. Relationship between deflection angle and voltage module voltage value.

[0100]

[0101] In this embodiment, since the first positive electrode plate 32 and the second positive electrode plate 33 are located on both sides of the negative electrode plate 31, when the two positive electrode plates are energized alternately, they are responsible for deflecting the ion beam to the left or to the right, respectively. For example... Figure 3 As shown, the deflection angle range is -86°. <86°, meaning the injection angle is 172°. One deflection cycle. The cycle time is 30 seconds. One jet per second, i.e., deflection angle. The voltage value of the voltage module is changed by 5.7° during the injection time.

[0102] It can utilize the electric field force exerted on charged ions in an electric field to deflect the jet ion beam at a preset angle.

[0103] Example 3: A device includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, it implements an ion beam ejection angle control method.

[0104] The processor connects to external devices via an interface, and the processing unit can also connect to a display via an interface. The processing unit connects to memory via a network adapter. The memory stores computer programs and can include computer system readable media in the form of volatile memory, such as RAM and / or cache. RAM is random access memory. The device may further include other removable / non-removable, volatile / non-volatile computer system storage media.

[0105] At least one set of computer programs is stored in memory, including but not limited to an operating system, one or more application programs, other program modules, and program data. Each or some combination of these examples may include an implementation of a network environment. The computer programs typically perform the functions and / or methods described in the embodiments of this invention.

[0106] Example 4: A storage medium storing a computer program, which, when executed by a processor, implements the steps of an ion beam ejection angle control method.

[0107] The storage medium may be any combination of one or more computer-readable storage media. The storage medium may be a computer-readable signal medium or a computer storage medium. The storage medium may be, but is not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof.

[0108] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for controlling the ion beam ejection angle, characterized in that, Includes the following steps: S1: Obtain and configure the injection scheme, which includes injection angle, injection speed, injection direction, cycle step size and deflection cycle; S2: Calculate the voltage change value based on the injection scheme; S3: The voltage change is controlled periodically based on the voltage change value. The control unit controls the voltage change and the corresponding positive plate voltage value according to the voltage value of each deflection. The first spray range and the second spray range are divided by the bisector of the spray angle. The first spray range is controlled by the negative polarity plate and the first positive polarity plate, and the second spray range is controlled by the negative polarity plate and the second positive polarity plate. When switching from the first spray range to the second spray range, the voltage change values ​​of the negative polarity plate and the first positive polarity plate are decreased according to the cycle step size until they are 0, and the voltage change values ​​of the negative polarity plate and the second positive polarity plate are increased according to the cycle step size. When switching from the second spray range to the first spray range, the voltage change values ​​of the negative polarity plate and the second positive polarity plate are decreased according to the cycle step size until they are 0, and the voltage change values ​​of the negative polarity plate and the first positive polarity plate are increased according to the cycle step size.

2. The ion beam ejection angle control method according to claim 1, characterized in that, In S2, the voltage value is calculated based on the injection angle, polarity plate length, injection speed, and distance between the positive and negative polarity plates, as shown in the following expression: In the above formula, This is the voltage value; Each electron carries a charge; It refers to the ion mass; The spray angle; The length of the polar plate; The jet speed; For the number of electrons; This represents the distance between the positive and negative polarity plates.

3. The ion beam ejection angle control method according to claim 2, characterized in that, In S2, the voltage change is calculated based on the voltage value, the period step size, and the deflection period, as shown in the following expression: In the above formula, This represents the voltage change value. Each electron carries a charge; It refers to the ion mass; The length of the polar plate; The jet speed; For the number of electrons; This represents the distance between the positive and negative polarity plates. The periodic step size; For the deflection period; This refers to the spray angle.

4. An ion beam ejection angle control system, used to execute the ion beam ejection angle control method according to any one of claims 1-3, characterized in that, include: The generation module is connected to the transmission module, which in turn is connected to the control module, and the control module is connected to the configuration acquisition module.

5. The ion beam ejection angle control system according to claim 4, characterized in that, The first and second positive plates of the control module are symmetrically distributed on both sides of the negative plate.

6. The ion beam ejection angle control system according to claim 4 or 5, characterized in that, The analog-to-digital converter module of the control module is connected to the first positive plate, the second positive plate, the negative plate, and the control unit.

7. A device, characterized in that, include: The memory, the processor, and the computer program stored in the memory and executable on the processor, wherein the processor, when executing the computer program, implements the ion beam ejection angle control method as described in any one of claims 1-3.

8. A storage medium storing a computer program, characterized in that, The computer program is implemented when executed by the processor. The ion beam ejection angle control method as described in any one of claims 1-3.

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