A semiconductor wafer polishing material and a method for preparing the same

Abstract

The application discloses a semiconductor wafer polishing material and a preparation method thereof. The preparation method comprises the following steps: step 1, preparing a first component, a second component and a third component in any sequence respectively; the first component is an isocyanate prepolymer; the second component is an amino-terminated polyamic acid, and the number average molecular weight of the amino-terminated polyamic acid is 6000-10000; the third component is a mixture of a functional filler and an amine curing agent; and step 2, pouring and forming after mixing the first component, the second component and the third component uniformly, and obtaining the semiconductor wafer polishing material through heat treatment. The whole preparation process is simple and effective, the obtained polishing pad has good polishing effect and long service life.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor wafer polishing material and its preparation method. Background Technology

[0002] Chemical mechanical polishing (CMP) is a crucial technology in the semiconductor industry, used repeatedly in the manufacturing process of semiconductor wafers. It is a key technology for surface treatment of semiconductor wafers, therefore, the quality and performance of the polishing pad are paramount. In each CMP process, the polishing pad, together with the polishing slurry, removes excess material in a planing manner to maintain its flatness. Therefore, the polishing pad material must possess sufficient mechanical strength, resistance to media (hydrolysis resistance, high-temperature oil resistance), and durability to ensure effective polishing.

[0003] Most existing polishing pads are polyurethane materials obtained by reacting polyisocyanates with chain extenders and curing agents. Among them, chain extenders are key additives that can react with molecules or molecular chains containing isocyanate functional groups, thereby extending the molecular chain and increasing the molecular weight. Chain extenders are mainly diamines and glycols. Traditional glycol chain extenders, such as ethylene glycol, 1,4-butanediol, and diethylene glycol, have limited effect on improving the performance of polyurethane products and are considered general chain extenders. Aromatic diamines and aromatic glycols containing rigid benzene rings can relatively better improve the performance of polyurethane materials. However, the mechanical strength, heat resistance, media resistance, and wear resistance of existing polyurethane materials still need further improvement. Summary of the Invention

[0004] Based on this, a semiconductor wafer polishing material with improved mechanical strength, heat resistance, media resistance, and wear resistance, and its preparation method are provided.

[0005] A method for preparing a semiconductor wafer polishing material includes:

[0006] Step 1: Prepare the first component, the second component, and the third component in any order;

[0007] The first component is an isocyanate prepolymer;

[0008] The second component is amino-terminated polyamic acid, wherein the number average molecular weight of the amino-terminated polyamic acid is 6000-10000;

[0009] The third component is a mixture of functional filler and amine curing agent;

[0010] Step 2: After the first component, the second component, and the third component are mixed evenly, they are cast into a mold and then heat-treated to obtain the semiconductor wafer polishing material.

[0011] In the preparation method of the semiconductor wafer polishing material, by introducing a second component, namely amino-terminated polyamic acid, a polyimide structural component is introduced into the final semiconductor wafer polishing material. By introducing a polyimide component with an appropriate proportion and structure, the mechanical properties, high temperature resistance, hydrolysis resistance, and organic solvent resistance of the semiconductor wafer polishing material can be comprehensively improved.

[0012] The preparation method employs a three-component casting molding process, where each component does not affect the others during preparation and is mixed after preparation, making the reaction process more controllable.

[0013] During casting, the first, second, and third components are all in liquid state. To ensure that the first, second, and third components are all in liquid state, the casting temperature is 60–100℃.

[0014] Several alternative methods are provided below, but they are not intended as additional limitations on the overall solution above. They are merely further additions or optimizations. Provided there are no technical or logical contradictions, each alternative method can be combined individually with respect to the overall solution above, or multiple alternative methods can be combined with each other.

[0015] The isocyanate prepolymer is prepared by reacting diisocyanate and polyol. The diisocyanate is at least one of methylene bis-4,4'-cyclohexyl diisocyanate, 1,4-cyclohexyl diisocyanate, isophorone diisocyanate, propylene-1,2-diisocyanate, tetramethylene-1,4-diisocyanate, 1,6-hexane diisocyanate, dodecane-1,12-diisocyanate, cyclobutane-1,3-diisocyanate, cyclohexane-1,3-diisocyanate, cyclohexane-1,4-diisocyanate, methylcyclohexene diisocyanate, ethylene diisocyanate, 2,2,4-trimethylhexane diisocyanate, dicyclohexylmethane diisocyanate, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, and diphenylmethane diisocyanate. The polyol is at least one of a polyol or a small molecule polyol with a functionality of 2 or more.

[0016] Optionally, the diisocyanate is 2,4-toluene diisocyanate or 2,6-toluene diisocyanate.

[0017] Optionally, the polyol may be at least one of polyether polyol, polycarbonate polyol, polyester polyol, and polycaprolactone polyol. More preferably, the polyol is polytetramethylene ether glycol, polypropylene ether glycol, or polyethylene ether glycol. More preferably, the small molecule polyol is at least one of ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diethylene glycol, dipropylene glycol, and tripropylene glycol.

[0018] Optionally, the amino-terminated polyamic acid is obtained by reacting dianhydride with diamine, wherein one and only one of the dianhydride and diamine has an aromatic group;

[0019] The dianhydride is at least one of pyromellitic dianhydride, cyclobutanetetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 1,2,3,4-cyclopentanetetracarboxylic dianhydride, 3,3',4,4'-diphenyl ethertetracarboxylic dianhydride, 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride), bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic dianhydride, and bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride;

[0020] The diamine is at least one of ethylenediamine, 1,6-hexanediamine, p-phenylenediamine, o-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 4,4'-(9-methylene)diphenylamine, 2,2-bis(4-aminophenyl)propane, 4,4'-diaminodiphenyl sulfone, and 1,4-bis(4-aminophenyl)benzene.

[0021] The dianhydride and diamine contain only one aromatic group. Specifically, the amino-terminated polyamic acid is prepared by reacting an aromatic dianhydride with an aliphatic diamine, or by reacting an aliphatic dianhydride with an aromatic diamine. The resulting polyimide chain possesses a certain degree of rigidity and hydrophobicity, allowing for in-situ self-assembly to form a microphase-separated hard segment structure. This structure is uniformly distributed within the polyurethane soft segment network, creating a soft-hard organic bond that acts as a crosslinking site and nanofiller, significantly enhancing the copolymer's mechanical strength and Young's modulus. Furthermore, the rigid and hydrophobic polyimide component can prevent water molecule diffusion, thereby improving the polishing material's hydrolysis resistance. Polyimide also exhibits heat resistance and organic solvent resistance, further contributing to improved heat resistance and organic solvent resistance in polishing materials.

[0022] Optionally, the dianhydride is cyclobutanetetracarboxylic dianhydride, and the diamine is 1,4-bis(4-aminophenyl)benzene.

[0023] Optionally, the dianhydride is 1,2,3,4-cyclopentanetetracarboxylic acid dianhydride, and the diamine is 4,4'-diaminodiphenyl ether.

[0024] Optionally, the dianhydride is 3,3',4,4'-biphenyltetracarboxylic acid dianhydride, and the diamine is 1,6-hexanediamine.

[0025] Optionally, the dianhydride is 4,4'-(4,4'-isopropylidenediphenoxy)bis(phthalic anhydride), and the diamine is 1,6-hexanediamine.

[0026] Optionally, the molar ratio of the dianhydride to the diamine is 1:1.05 to 1:1.4.

[0027] Optionally, the solvent for the dianhydride and diamine is dimethyl sulfoxide (DMSO), dimethylformamide (DMF), or dimethylacetamide (DMAC). More preferably, the solvent for the dianhydride and diamine is dimethylacetamide. The dianhydride and diamine react in a solvent to obtain an amino-terminated polyamic acid, which is also in solution form. This solution form requires no further processing and is directly mixed with the first and third components as the second component. The total mass fraction of the dianhydride and diamine in the solvent is 30–80%.

[0028] Optionally, in the third component, the mass ratio of the functional filler to the amine curing agent is 1:1 to 40:1.

[0029] Optionally, the functional filler in the third component is made of polymer or inorganic oxide, and the functional filler is in the form of particles or microspheres.

[0030] Optionally, the functional filler in the third component is made of cerium oxide, zirconium oxide, or aluminum oxide, and the morphology of the functional filler is hollow microspheres with a diameter of 20–100 micrometers.

[0031] Optionally, the amine curing agent in the third component is at least one selected from 3,3-dichloro-4,4-diphenylmethanediamine, 3,5-dimethylthiotoluenediamine, 3,5-diethyltoluenediamine, 4,4'-methylenebis(3-chloro-2,6-diethylaniline), 4,4'-methylenebis(2,6-diethyl)aniline, 4,4'-methylenebis(2,6-diisopropyl)aniline, 4,4'-methylenebis(2-isopropyl-6-methyl)aniline, 4,4'-methylenebis(2-methyl-6-diethylaniline), 4,4'-methylenebis(2-ethylaniline), 4,4'-methylenediphenylamine, and toluenediamine.

[0032] Optionally, in step 2, the weight proportions of the first, second, and third components when mixed are as follows:

[0033] First group 70-95

[0034] Second group 5-30

[0035] The third component is 0.1–20.

[0036] Optionally, in step 2, the heat treatment includes sequential curing and dehydration imidization, with a curing temperature of 80–120°C and a curing time of 5–10 h, and a dehydration imidization temperature of 130–190°C and a time of 5–10 h.

[0037] This application utilizes diisocyanate and polyol prepolymer to obtain isocyanate prepolymer, and uses dianhydride to react with excess diamine to form amino-terminated polyamic acid. The amino-terminated polyamic acid is used as a chain extender, and is mixed evenly with isocyanate prepolymer, functional filler and amine curing agent and then cast. It first undergoes a curing reaction to solidify and form a shape, and then undergoes high-temperature heat treatment at high temperature to dehydrate and cyclize the polyamic acid to obtain polyimide segments, thereby improving the mechanical properties, high temperature resistance, hydrolysis resistance, organic solvent resistance and other properties of the polishing material, and ensuring the polishing effect.

[0038] This application also provides a semiconductor wafer polishing material, which is prepared using the semiconductor wafer polishing material preparation method described above.

[0039] The semiconductor wafer polishing material incorporates a polyimide structure into the polyurethane molecular chain segment to form a polyimide-polyurethane copolymer. Compared with common polyurethane, the polyimide-polyurethane copolymer combines the advantages of both polyimide and polyurethane, exhibiting excellent mechanical properties, hydrolysis resistance, heat resistance, oxidation resistance, and high-temperature oil resistance. While ensuring stable quality, it can also guarantee the polishing rate and significantly improve the lifespan of the polishing material.

[0040] The semiconductor wafer polishing material provided in this application introduces polyimide segments with appropriate proportions and structures into the polyurethane segments, resulting in semiconductor wafer polishing materials with superior mechanical strength, better resistance to media (hydrolysis resistance, high-temperature oil resistance), and durability. Attached Figure Description

[0041] Figure 1 The TGA curves are for the comparative example and Example 1. Detailed Implementation

[0042] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0043] To better describe and illustrate the embodiments of this application, reference may be made to one or more accompanying drawings, but the additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the inventive creations of this application, the embodiments or preferred methods described herein.

[0044] It should be noted that when a component is said to be "connected" to another component, it can be directly connected to the other component or it can be connected to a component in between. When a component is said to be "set on" another component, it can be directly set on the other component or it may be set to a component in between.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0046] Example 1

[0047] A method for preparing a semiconductor wafer polishing material includes:

[0048] (1) Preparation of the first component: 2,4-toluene diisocyanate and polytetramethylene ether glycol with a number average molecular weight of 1000 were prepolymerized at 80°C for 2 hours. The reactants were subjected to vacuum degassing treatment to obtain isocyanate prepolymer (i.e., the first component). The mass ratio of 2,4-toluene diisocyanate to polytetramethylene ether glycol was 52:48.

[0049] Preparation of the second component: Cyclobutanetetracarboxylic dianhydride and 1,4-bis(4-aminophenyl)benzene in a molar ratio of 1:1.3 were dissolved in dimethylacetamide (the total concentration of cyclobutanetetracarboxylic dianhydride and 1,4-bis(4-aminophenyl)benzene was 40 wt%), and the mixture was stirred under a nitrogen atmosphere for 12 h to obtain a polyamic acid solution (i.e., the second component). The number average molecular weight of the polyamic acid was approximately 6800.

[0050] Preparation of the third component: Cerium oxide hollow microspheres (60 micrometers in diameter) and 4,4'-methylenediphenylamine were selected as the functional filler and amine curing agent, respectively. The mass ratio of cerium oxide hollow microspheres to 4,4'-methylenediphenylamine was 20:1. The third component was obtained by stirring and mixing.

[0051] (2) The first component, the second component and the third component are mixed evenly in a mass ratio of 65:27:8, poured into a mold at 80°C, cured at 120°C for 4 hours, thermally imidized at 180°C for 6 hours, and demolded to obtain the semiconductor wafer polishing material.

[0052] Example 2

[0053] A method for preparing a semiconductor wafer polishing material includes:

[0054] (1) Preparation of the first component: 2,4-toluene diisocyanate and polytetramethylene ether glycol with a number average molecular weight of 1000 were prepolymerized at 80°C for 2 hours. The reactants were subjected to vacuum degassing treatment to obtain isocyanate prepolymer (i.e., the first component). The mass ratio of 2,4-toluene diisocyanate to polytetramethylene ether glycol was 52:48.

[0055] Preparation of the second component: 1,2,3,4-cyclopentanetetracarboxylic dianhydride and 4,4'-diaminodiphenyl ether were dissolved in dimethylacetamide at a molar ratio of 1:1.2 (the total concentration of 4,4'-diaminodiphenyl ether and 1,2,3,4-cyclopentanetetracarboxylic dianhydride was 50 wt%), and the mixture was stirred under a nitrogen atmosphere for 12 h to obtain a polyamic acid solution (i.e., the second component). The number average molecular weight of the polyamic acid was approximately 8000.

[0056] Preparation of the third component: Cerium oxide hollow microspheres (60 micrometers in diameter) and 4,4'-methylenediphenylamine were selected as the functional filler and amine curing agent, respectively. The mass ratio of cerium oxide hollow microspheres to 4,4'-methylenediphenylamine was 20:1. The third component was obtained by stirring and mixing.

[0057] (2) The first component, the second component and the third component are mixed evenly in a mass ratio of 70:22:8, poured into a mold at 80°C, cured at 120°C for 4 hours, thermally imidized at 180°C for 6 hours, and demolded to obtain the semiconductor wafer polishing material.

[0058] Example 3

[0059] A method for preparing a semiconductor wafer polishing material includes:

[0060] (1) Preparation of the first component: 2,4-toluene diisocyanate and polytetramethylene ether glycol with a number average molecular weight of 1000 were prepolymerized at 80°C for 2 hours. The reactants were subjected to vacuum degassing treatment to obtain isocyanate prepolymer (i.e., the first component). The mass ratio of 2,4-toluene diisocyanate to polytetramethylene ether glycol was 52:48.

[0061] Preparation of the second component: 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and 1,6-hexanediamine in a molar ratio of 1:1.15 were dissolved in dimethylacetamide (the total concentration of 3,3',4,4'-biphenyltetracarboxylic acid dianhydride and 1,6-hexanediamine was 45 wt%), and the mixture was stirred under a nitrogen atmosphere for 12 h to obtain a polyamic acid solution (i.e., the second component). The number average molecular weight of the polyamic acid was 7200.

[0062] Preparation of the third component: Cerium oxide hollow microspheres (60 micrometers in diameter) and 4,4'-methylenediphenylamine were selected as the functional filler and amine curing agent, respectively. The mass ratio of cerium oxide hollow microspheres to 4,4'-methylenediphenylamine was 20:1. The third component was obtained by stirring and mixing.

[0063] (2) The first component, the second component and the third component are mixed evenly in a mass ratio of 70:22:8, poured into a mold at 80°C, cured at 120°C for 4 hours, thermally imidized at 180°C for 6 hours, and demolded to obtain the semiconductor wafer polishing material.

[0064] Example 4

[0065] A method for preparing a semiconductor wafer polishing material includes:

[0066] (1) Preparation of the first component: 2,4-toluene diisocyanate and polytetramethylene ether glycol with a number average molecular weight of 1000 were prepolymerized at 80°C for 2 hours. The reactants were subjected to vacuum degassing treatment to obtain isocyanate prepolymer (i.e., the first component). The mass ratio of 2,4-toluene diisocyanate to polytetramethylene ether glycol was 52:48.

[0067] Preparation of the second component: 4,4'-(4,4'-isopropylidene diphenoxy)bis(phthalic anhydride) and 1,6-hexanediamine in a molar ratio of 1:1.3 were dissolved in dimethylacetamide (the total concentration of 4,4'-(4,4'-isopropylidene diphenoxy)bis(phthalic anhydride) and 1,6-hexanediamine was 40 wt%), and the mixture was stirred under a nitrogen atmosphere for 12 h to obtain a polyamic acid solution (i.e., the second component). The number average molecular weight of the polyamic acid was 7000.

[0068] Preparation of the third component: Cerium oxide hollow microspheres (60 micrometers in diameter) and 4,4'-methylenediphenylamine were selected as the functional filler and amine curing agent, respectively. The mass ratio of cerium oxide hollow microspheres to 4,4'-methylenediphenylamine was 20:1. The third component was obtained by stirring and mixing.

[0069] (2) The first component, the second component and the third component are mixed evenly in a mass ratio of 75:10:15, poured into a mold at 80°C, aged at 120°C for 4 hours, thermally imidized at 180°C for 6 hours, and demolded to obtain the semiconductor wafer polishing material.

[0070] Example 5

[0071] A method for preparing a semiconductor wafer polishing material includes:

[0072] (1) Preparation of the first component: 2,4-toluene diisocyanate and polytetramethylene ether glycol with a number average molecular weight of 2000 were prepolymerized at 80°C for 2 hours. The reactants were subjected to vacuum degassing treatment to obtain isocyanate prepolymer (i.e., the first component). The mass ratio of 2,4-toluene diisocyanate to polytetramethylene ether glycol was 52:48.

[0073] Preparation of the second component: 4,4'-(4,4'-isopropylidene diphenoxy)bis(phthalic anhydride) and 1,6-hexanediamine in a molar ratio of 1:1.3 were dissolved in dimethylacetamide (the total concentration of 4,4'-(4,4'-isopropylidene diphenoxy)bis(phthalic anhydride) and 1,6-hexanediamine was 40 wt%). The mixture was stirred under a nitrogen atmosphere for 16 h to obtain a polyamic acid solution (i.e., the second component). The number average molecular weight of the polyamic acid was 7500.

[0074] Preparation of the third component: Cerium oxide hollow microspheres (60 micrometers in diameter) and 4,4'-methylenediphenylamine were selected as the functional filler and amine curing agent, respectively. The mass ratio of cerium oxide hollow microspheres to 4,4'-methylenediphenylamine was 20:1. The third component was obtained by stirring and mixing.

[0075] (2) The first component, the second component and the third component are mixed evenly in a mass ratio of 65:25:10, poured into a mold at 80°C, cured at 120°C for 4 hours, thermally imidized at 180°C for 6 hours, and demolded to obtain the semiconductor wafer polishing material.

[0076] Comparative example:

[0077] A method for preparing a semiconductor wafer polishing material includes:

[0078] (1) Preparation of isocyanate prepolymer: 2,4-toluene diisocyanate and polytetramethylene ether glycol with a number average molecular weight of 1000 were prepolymerized at 80°C for 2 hours. The reactants were subjected to vacuum degassing treatment to obtain isocyanate prepolymer. The mass ratio of 2,4-toluene diisocyanate to polytetramethylene ether glycol was 52:48.

[0079] (2) Preparation of the mixture of functional filler and amine curing agent: Cerium oxide hollow microspheres (60 micrometers in diameter) and 4,4'-methylenediphenylamine were selected as functional filler and amine curing agent, respectively. The mass ratio of cerium oxide hollow microspheres to 4,4'-methylenediphenylamine was 20:1. The mixture was obtained by stirring and mixing.

[0080] (3) The product of step (1) and the product of step (2) are mixed evenly at a mass ratio of 92:8, poured into a mold at 80°C, cured at 120°C for 4 hours, and demolded to obtain the semiconductor wafer polishing material.

[0081] The performance characterization results of each embodiment and comparative example are shown in Table 1.

[0082] Table 1

[0083]

[0084] See Figure 1 As shown, compared with the comparative example (pure polyurethane), the introduction of polyimide can enhance the thermal stability of the material. For example, the thermal degradation temperature of Example 1 is increased by tens of degrees compared with the comparative example.

[0085] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0086] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method of making a semiconductor wafer polishing material, comprising: The application relates to a semiconductor wafer polishing material and a preparation method thereof. Step 1: preparing a first component, a second component and a third component respectively in any sequence; The first component is an isocyanate prepolymer; The second component is amino-terminated polyamide acid, and the number average molecular weight of the amino-terminated polyamide acid is 6000-10000; The amino-terminated polyamide acid is obtained by the reaction of a dianhydride and a diamine, and only one of the dianhydride and the diamine has an aromatic group; The dianhydride is at least one of pyromellitic dianhydride, cyclobutane tetracarboxylic dianhydride, 3,3',4,4'-diphenyltetracarboxylic dianhydride, 1,2,3,4-cyclopentane tetracarboxylic dianhydride, 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride, 4,4'-(4,4'-isopropylidene diphenyloxy) bis(phthalic anhydride), bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic dianhydride, bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic dianhydride; The diamine is at least one of ethylenediamine, 1,6-hexanediamine, p-phenylenediamine, o-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 4,4'-(9-methylene)dianiline, 2,2-bis(4-aminophenyl)propane, 4,4'-diaminodiphenyl sulfone, 1,4-bis(4-aminophenyl)benzene; The molar ratio of the dianhydride to the diamine is 1:1.05-1:1.4; The third component is a mixture of functional fillers and amine curing agents; Step 2: pouring and forming after uniformly mixing the first component, the second component and the third component, and obtaining the semiconductor wafer polishing material through heat treatment; In step 2, the heat treatment comprises curing forming, aging and dehydrating imidization which are sequentially performed, the aging temperature is 80-120 DEG C, the aging time is 5-10 h, the dehydrating imidization temperature is 130-190 DEG C, and the time is 5-10 h.

2. The method of claim 1, wherein the semiconductor wafer polishing material is prepared by the steps of: The dianhydride is cyclobutane tetracarboxylic dianhydride, and the diamine is 1,4-bis(4-aminophenyl)benzene.

3. The method for preparing the semiconductor wafer polishing material according to claim 1, characterized in that, The dianhydride is 1,2,3,4-cyclopentane tetracarboxylic dianhydride, and the diamine is 4,4'-diaminodiphenyl ether.

4. The method for preparing the semiconductor wafer polishing material according to claim 1, characterized in that, The dianhydride is 3,3',4,4'-diphenyltetracarboxylic dianhydride, and the diamine is 1,6-hexanediamine.

5. The method for preparing the semiconductor wafer polishing material according to claim 1, characterized in that, The dianhydride is 4,4'-(4,4'-isopropylidene diphenyloxy) bis(phthalic anhydride), and the diamine is 1,6-hexanediamine.

6. The method for preparing the semiconductor wafer polishing material according to claim 1, characterized in that, In step 2, the weight ratio of the first component, the second component and the third component in the mixing is as follows: The first component is 70-95 The second component is 5-30 The third component is 0.1-20.

7. A semiconductor wafer polishing material, characterized by, The semiconductor wafer polishing material is prepared by the preparation method of the semiconductor wafer polishing material according to any one of claims 1-6.

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