Ventilation panel and thin film deposition chamber

Abstract

The disclosed embodiment relates to the field of semiconductor manufacturing, and provides a ventilation panel and a thin film deposition chamber, wherein the ventilation panel includes: a guide plate, the guide plate has an air inlet and a gas guide channel connected to the air inlet, the air inlet is used to connect to an air inlet pipe for providing gas; an air outlet mechanism, the air outlet mechanism has an air outlet surface and a plurality of air outlets, the air outlets are connected to the gas guide channel and penetrate the air outlet surface, the air outlet surface includes a central area and an edge area surrounding the central area; a heating mechanism, the heating mechanism is used to heat the air outlet surface so that the temperature of the edge area is higher than that of the central area. The disclosed embodiment can at least improve the reliability of preparing a target film on a wafer and reduce the cost.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor manufacturing, and in particular to a ventilation panel and a thin film deposition chamber. Background Art

[0002] Deposition process is a common film-forming process in semiconductor manufacturing. Deposition process mainly includes chemical vapor deposition (CVD), physical vapor deposition (PVD) and atomic layer deposition (ALD). Taking chemical vapor deposition as an example, chemical vapor deposition is a process technology in which reactants react chemically under gaseous conditions to generate solid substances that are deposited on the surface of the wafer to obtain the target thin film. This process technology is realized through a thin film deposition chamber.

[0003] When a thin film is deposited on the surface of a wafer, as the reaction gas flows throughout the chamber, the thin film will also be deposited on the sidewalls of the thin film deposition chamber and the outlet surface of the ventilation panel. Therefore, after the target thin film is formed on the surface of the wafer, it is necessary to provide clean gas into the chamber to etch the thin film on the sidewalls of the chamber and the outlet surface. However, there are currently problems with thin film etching on the outlet surface of the ventilation panel, which makes the reliability of the thin film deposition chamber in preparing the target thin film on the wafer low. Summary of the invention

[0004] The embodiments of the present disclosure provide a ventilation panel and a thin film deposition chamber, which can at least improve the reliability of preparing a target thin film on a wafer and reduce the cost.

[0005] According to some embodiments of the present disclosure, on the one hand, the embodiments of the present disclosure provide a ventilation panel, including a guide plate, the guide plate having an air inlet hole and a gas guide channel connected to the air inlet hole, the air inlet hole being used to connect to an air inlet pipe that provides gas; an air outlet mechanism, the air outlet mechanism having an air outlet surface and a plurality of air outlet holes, the air outlet holes being connected to the gas guide channel and passing through the air outlet surface, the air outlet surface including a central area and an edge area surrounding the central area; a heating mechanism, the heating mechanism being used to heat the air outlet surface so that the temperature of the edge area is higher than the temperature of the central area.

[0006] In some embodiments, the central zone includes: a core zone, and a plurality of transition zones distributed sequentially around the periphery of the core zone in a direction away from the core zone; wherein the heating component is further configured to heat the air outlet surface so that the temperatures of the plurality of transition zones distributed sequentially in a direction away from the core zone gradually increase, wherein the temperature of the transition zone adjacent to the edge zone is lower than or equal to the temperature of the edge zone.

[0007] In some embodiments, the heating mechanism includes: a plurality of heating units, the heating units corresponding one-to-one to the core area, the transition area, and the edge area, and the heating units are arranged on the corresponding core area, the transition area, and the edge area; a controller, the controller is connected to the heating unit and is used to control the heating of the heating unit.

[0008] In some embodiments, the heating unit corresponding to the transition zone is a closed ring structure; the heating unit corresponding to the edge zone is a closed ring structure; and the heating unit corresponding to the core zone is a circular structure.

[0009] In some embodiments, the heating unit comprises a heating wire.

[0010] In some embodiments, the controller is configured to provide current to each of the heating units, wherein the current provided by the controller to adjacent heating units gradually increases in a direction away from the core region.

[0011] In some embodiments, the resistances of adjacent heating units gradually increase in a direction away from the core region; and the controller is further configured to provide the same current to each of the heating units.

[0012] In some embodiments, the heating mechanism is disposed inside the guide plate.

[0013] In some embodiments, the air outlet mechanism includes: a first air outlet plate, the first air outlet plate having a plurality of first air outlet holes passing through the first air outlet plate, and the first air outlet holes are connected to the gas guide channel; a second air outlet plate, the second air outlet plate and the guide plate are respectively located on two opposite sides of the first air outlet plate, the second air outlet plate having a plurality of second air outlet holes passing through the second air outlet plate, the second air outlet holes are connected to the first air outlet holes, the distribution density of the second air outlet holes is greater than the distribution density of the first air outlet, and the aperture of the second air outlet holes is smaller than the aperture of the first air outlet holes; the heating mechanism is arranged in the first air outlet plate, on the surface of the first air outlet plate, in the second air outlet plate or on the surface of the second air outlet plate.

[0014] According to some embodiments of the present disclosure, on the other hand, the embodiments of the present disclosure further provide a thin film deposition chamber, comprising: a chamber; a heating base, the heating base is arranged at the bottom of the chamber, and is used to support a wafer; an exhaust port, the exhaust port is arranged on the side wall of the chamber; an air inlet pipeline, the air inlet pipeline is located at the top of the chamber; a ventilation panel as described in any one of claims 1-9, the ventilation panel is located in the chamber, the air inlet hole of the ventilation panel is connected to the air inlet pipeline, and the air outlet surface of the ventilation panel is opposite to the heating base; a cleaning component, the cleaning component is used to etch the thin film on the side wall of the chamber and the air outlet surface.

[0015] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0016] The technical solution of the ventilation panel provided in the embodiment of the present disclosure includes: a guide plate and an air outlet mechanism, the guide plate has an air inlet and a gas guide channel connected to the air inlet, the air inlet is used to connect to the air inlet pipe for providing gas, the air outlet mechanism has an air outlet surface and a plurality of air outlets, the air outlet is connected to the gas guide channel and passes through the air outlet surface, the air outlet surface includes a central area and an edge area surrounding the central area, the ventilation panel also includes a heating mechanism, the heating mechanism is used to heat the air outlet surface so that the temperature of the edge area is higher than the temperature of the central area. When the thin film is deposited, under the condition that the air outlet surface is not heated or the surface temperature of the air outlet surface is consistent, under the effect of the gas flow distribution, the deposition rate of the air outlet surface in the edge area is higher than that in the central area. In addition, when the thin film is cleaned, under the condition that the air outlet surface is not heated or the surface temperature of the air outlet surface is consistent, under the effect of the gas flow distribution, the cleaning rate of the air outlet surface in the edge area is lower than that in the central area. This difference makes the process in the semiconductor thin film manufacturing process: thin film deposition -> chamber cleaning -> thin film deposition. The chamber cleaning step must be over-cleaned (clean gas is introduced for a long time or at a high flow rate) to ensure that both the edge area and the central area of ​​the outlet surface are clean. On the one hand, this will waste a lot of clean gas; on the other hand, the long-term introduction or excessive inflow of clean gas such as NF3 will chemically react with the ventilation panel material, generally aluminum, to form aluminum fluoride powder, which falls on the wafer to form defects. In order to balance this difference, the embodiment of the present disclosure heats the outlet surface in different zones by setting a heating mechanism, so that the temperature of the edge area of ​​the outlet surface is higher than the temperature of the central area of ​​the outlet surface. On the one hand, because the outlet surface temperature is negatively correlated with the deposition rate of the thin film on the outlet surface, and the temperature of the edge area is higher than the temperature of the central area, the film deposition rate of the edge area of ​​the outlet surface is lower than the film deposition rate of the central area of ​​the outlet surface, thereby avoiding the problem of thin film deposited in the central area and thick film deposited on the edge area due to airflow distribution. On the other hand, when the clean gas is introduced to etch the thin film on the outlet surface, because the outlet surface temperature is positively correlated with the etching rate of the thin film on the outlet surface, and the temperature of the edge area is higher than that of the center area, the thin film etching rate on the edge area is higher than that on the center area, thereby avoiding the problem of higher thin film etching rate in the center area and lower thin film etching rate in the edge area due to airflow distribution. The above two aspects are conducive to improving the uniformity of etching the thin film on the outlet surface, thereby avoiding the problem of defects in the wafer caused by the unetched thin film in the edge area of ​​the outlet surface falling on the wafer, thereby improving the reliability of preparing the thin film on the wafer, and avoiding the problem of new compounds generated by the clean gas and the ventilation panel falling on the wafer due to excessive etching of the clean gas, thereby contaminating the wafer and causing defects in the wafer, thereby improving the reliability of preparing the target thin film on the wafer using the thin film deposition chamber of the ventilation panel.In addition, because the etching rate of the thin film on the outlet surface is positively correlated with the outlet surface temperature, heating the outlet surface by the heating mechanism can accelerate the rate at which the clean gas etches the thin film, thereby saving the amount of clean gas used and helping to reduce costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings, and these exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise specified, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 A structural schematic diagram of a ventilation panel in the related art;

[0019] Figure 2 A schematic diagram of a structure of a thin film deposition chamber in the related art;

[0020] Figure 3 A schematic diagram of a process of depositing a thin film on a wafer in the related art;

[0021] Figure 4 A schematic diagram of a situation after the clean gas is introduced in the related art;

[0022] Figure 5 A schematic diagram of the structure of a ventilation panel provided in an embodiment of the present disclosure;

[0023] Figure 6 A schematic diagram of a top view structure corresponding to the heating mechanism and the air outlet surface provided in an embodiment of the present disclosure;

[0024] Figure 7 It is a schematic diagram of the relationship between the film deposition rate and temperature within a certain temperature range;

[0025] Figure 8 Schematic diagram of the relationship between film etching rate and temperature within a certain temperature range;

[0026] Fig. 9 Another schematic diagram of a top view of the structure of the heating mechanism and the air outlet surface provided in the embodiment of the present disclosure;

[0027] Fig.10 A schematic diagram of a top view structure of an air outlet surface provided in an embodiment of the present disclosure;

[0028] Fig.11A schematic diagram of the structure of a thin film deposition chamber provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0029] Figure 1 It is a structural schematic diagram of a ventilation panel in the related technology.

[0030] refer to Figure 1 The ventilation panel 100 in the related art includes: a guide plate 101 and an air outlet mechanism 102. The guide plate 101 has an air inlet hole 111 and a gas guide channel 121 connected to the air inlet hole 111. The air inlet hole 111 is used to connect to an air inlet pipe that provides gas. The air outlet mechanism 102 has an air outlet surface 112 and a plurality of air outlet holes 122. The air outlet holes 122 are connected to the gas guide channel 121 and penetrate the air outlet surface 112. In some examples, the ventilation panel 100 also includes a heating mechanism 103 for heating the entire air outlet surface 112. In other examples, the ventilation panel 100 does not have a heating mechanism 103. In short, in the related art, because a heating mechanism 103 for heating the entire air outlet surface 112 is provided, or a heating mechanism 103 is not provided, the temperature of each area on the air outlet surface 112 is almost the same.

[0031] Figure 2 It is a structural schematic diagram of a thin film deposition chamber in the related technology.

[0032] Also refer to Figure 1 and Figure 2 The thin film deposition chamber in the related art includes: a chamber 200, a heating base 201, a gas extraction port 202 and a ceramic kit 203. The heating base 201 is arranged at the bottom of the chamber 200 for carrying the wafer 11. The gas extraction port 202 is arranged on the side wall of the chamber 200. The ceramic kit 203 is located on the side wall of the chamber 200 for protecting the side wall of the chamber 200. The thin film deposition chamber also includes an air inlet line 204, which is located at the top of the chamber 200 and is used to connect the air inlet pipe for providing gas so that the gas can enter the chamber 200. The thin film deposition chamber also includes: a ventilation panel 100, a radio frequency power supply (Radio Frequency, RF) 205 and a remote plasma controller (Remote Plasma Source, RPS) 206. The ventilation panel 100 is located in the chamber 200. The air inlet 111 of the ventilation panel 100 is connected to the air inlet pipeline 204. The air outlet surface 112 of the ventilation panel 100 is opposite to the heating base 201. The radio frequency power supply 205 is used to provide the electric field required to form plasma. The remote plasma controller 206 is used to convert the cleaning gas into a plasma state to clean the side wall of the chamber 200 and the thin film on the air outlet surface 112.

[0033] Figure 3 A schematic diagram of a deposition situation of depositing a thin film on a wafer in the related art.

[0034] refer to Figure 3 In the process of depositing the thin film 22 on the wafer 11, the thin film 22 is not only grown on the wafer 11, but also grown on the inner wall of the chamber 200 and the gas outlet surface 112. Due to the influence of the airflow distribution inside the chamber 200, the thin film 22 grown in the edge area of ​​the gas outlet surface 112 is often thicker, while the thin film 22 grown in the central area of ​​the gas outlet surface 112 is thinner. Specifically, when the gas deposits the thin film 22 on the wafer 11, the path of the gas from the central area to the wafer 11 is shorter than the path of the gas from the edge area to the wafer 11, so that the gas staying in the central area can be less than the gas staying in the edge area, so that the thin film 22 grown in the central area of ​​the gas outlet surface 112 is thinner than the thin film 22 grown in the edge area.

[0035] Figure 4 This is a schematic diagram of a situation after the clean gas is introduced in the related technology.

[0036] refer to Figure 4 After the deposition process is completed, it is often necessary to turn on the remote plasma controller 206 and introduce a F-containing cleaning gas, such as NF3, into the chamber 200. The dissociated F ions will etch the side walls of the chamber 200 and the thin film 22 on the gas outlet surface 112 to achieve a cleaning effect. However, due to the distribution of the gas in the chamber 200, the center area of ​​the gas outlet surface 112 is often etched quickly, while the edge area is etched slowly. On the one hand, if the etching time is short, the thin film 22 in the edge area is not etched cleanly. Over a long period of time, it will accumulate too thick and then cause high pressure and fall on the top of the wafer 11, forming defects on the wafer 11, making the reliability of preparing the target thin film 22 on the wafer 11 low. On the other hand, if the etching time is longer, the film 22 in the edge area can be completely etched, but the central area of ​​the outlet surface 112 will be over-etched, causing the metal layer in the ventilation panel 100 to be exposed. The metal layer reacts with the cleaning gas to form new compounds. The new compounds have insufficient adhesion to the rest of the ventilation panel 100 and will eventually fall onto the wafer 11, forming defects on the wafer 11 and contaminating the wafer 11, making the reliability of preparing the target film 22 on the wafer 11 low.

[0037] In summary, the ventilation panel design of the current thin film deposition chamber is unreasonable, which causes defects and contamination problems in the wafers placed in the thin film deposition chamber, and the reliability of the thin film deposition chamber in preparing the target thin film on the wafer is low.

[0038] In the ventilation panel provided in the embodiment of the present disclosure, a heating mechanism is provided to heat the outlet surface in different zones, and the temperature of the edge zone of the outlet surface is made higher than the temperature of the central zone of the outlet surface. On the one hand, because the outlet surface temperature is negatively correlated with the deposition rate of the thin film on the outlet surface, the deposition rate of the thin film in the edge zone of the outlet surface is lower than the deposition rate of the thin film in the central zone of the outlet surface, thereby avoiding the problem that the thin film deposited in the central zone is thinner and the thin film deposited in the edge zone is thicker due to the air flow distribution. On the other hand, when the clean gas is introduced to etch the thin film on the outlet surface, because the outlet surface temperature is positively correlated with the etching rate of the thin film on the outlet surface, the etching rate of the thin film in the edge zone is higher than the etching rate of the thin film in the central zone, thereby avoiding the problem that the etching rate of the thin film in the central zone is higher and the etching rate of the thin film in the edge zone is lower due to the air flow distribution. The above two aspects are conducive to improving the uniformity of thin film etching on the outlet surface, thereby avoiding the problem of defects in the wafer caused by the thin film that has not been etched on the edge area of ​​the outlet surface falling on the wafer, thereby improving the reliability of thin film preparation on the wafer, and avoiding the problem of new compounds generated by the clean gas and the ventilation panel due to excessive etching of the clean gas falling on the wafer, contaminating the wafer and causing defects in the wafer, thereby improving the reliability of the thin film deposition chamber using the ventilation panel to prepare the target film on the wafer. In addition, because the etching rate of the thin film on the outlet surface is positively correlated with the temperature of the outlet surface, the heating mechanism heating the outlet surface can speed up the rate at which the clean gas etches the thin film, thereby saving the amount of clean gas used and helping to reduce costs.

[0039] The following will describe the various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present disclosure, many technical details are provided in order to enable the reader to better understand the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can be implemented.

[0040] Figure 5 A schematic diagram of the structure of a ventilation panel provided in an embodiment of the present disclosure, Figure 6 A schematic diagram of a top view of the structure of the heating mechanism and the air outlet surface provided in the embodiment of the present disclosure. It should be noted that in order to facilitate the understanding of the corresponding relationship between the central area and the edge area on the heating mechanism and the air outlet surface, Figure 6 The heating mechanism and the air outlet surface are also shown. Figure 6 The dotted lines above are the divisions of the various areas on the outlet surface.

[0041] Also refer to Figure 5 and Figure 6The ventilation panel 300 includes a guide plate 301, an air outlet mechanism 302 and a heating mechanism 303. The guide plate 301 has an air inlet hole 311 and a gas guide channel 321 connected to the air inlet hole 311, and the air inlet hole 311 is used to connect to the air inlet pipe for providing gas. The air outlet mechanism 302 has an air outlet surface 312 and a plurality of air outlet holes 322, the air outlet holes 322 are connected to the gas guide channel 321 and penetrate the air outlet surface 312, and the air outlet surface 312 includes a central area 3121 and an edge area 3122 surrounding the central area 3121. The heating mechanism 303 is used to heat the air outlet surface 312 so that the temperature of the edge area 3122 is higher than the temperature of the central area 3121.

[0042] The ventilation panel 300 is used to provide gas to the chamber of the thin film deposition chamber.

[0043] The gas may be one or more of a reactive gas, a carrier gas, or a cleaning gas.

[0044] The guide plate 301 is used to connect to the air inlet pipe for providing gas, and guide the gas so that the gas is distributed not only near the air inlet hole 311 but also in the part far away from the air inlet hole 311.

[0045] The air inlet hole 311 is used to connect to an air inlet pipe for providing gas, so that the gas can enter the chamber.

[0046] The gas guiding channel 321 is connected to the gas inlet hole 311 , so that the gas is distributed not only near the gas inlet hole 311 , but also in the part far away from the gas inlet hole 311 , so that the gas is dispersed in the chamber.

[0047] The gas outlet mechanism 302 is used to guide the gas introduced by the guide plate 301 into the chamber.

[0048] The gas outlet holes 322 allow gas to enter the chamber of the thin film deposition chamber through the gas outlet holes 322 .

[0049] In some embodiments, the gas outlet mechanism 302 includes a first gas outlet plate 332 and a second gas outlet plate 342. The first gas outlet plate 332 has a plurality of first gas outlet holes 352 penetrating the first gas outlet plate 332, and the first gas outlet holes 352 are connected to the gas guide channel 321. The second gas outlet plate 342 and the guide plate 301 are respectively located on opposite sides of the first gas outlet plate 332. The second gas outlet plate 342 has a plurality of second gas outlet holes 362 penetrating the second gas outlet plate 342, and the second gas outlet holes 362 are connected to the first gas outlet holes 352. The distribution density of the second gas outlet holes 362 is greater than the distribution density of the first gas outlet holes 352, and the aperture of the second gas outlet holes 362 is smaller than the aperture of the first gas outlet holes 352. The heating mechanism 303 can be arranged in the first gas outlet plate 332, on the surface of the first gas outlet plate 332, in the second gas outlet plate 342, or on the surface of the second gas outlet plate 342.

[0050] The first outlet plate 332 is used to communicate with the gas guide channel 321, and is used to transfer the gas in the gas guide channel 321 to the second outlet plate 342. Specifically, the first outlet hole 352 of the first outlet plate 332 is used to communicate with the gas guide channel 321, and is used to transfer the gas in the gas guide channel 321 to the second outlet plate 342.

[0051] The second gas outlet plate 342 and the guide plate 301 are respectively located on opposite sides of the first gas outlet plate 332. The second gas outlet plate 342 is used to transport the gas in the first gas outlet plate 332 to the chamber of the thin film deposition chamber connected to the ventilation panel 300. Specifically, the second gas outlet hole 362 of the second gas outlet plate 342 is connected to the first gas outlet hole 352 to transport the gas in the first gas outlet plate 332 to the chamber of the thin film deposition chamber connected to the ventilation panel 300.

[0052] The second air outlet 362 is connected to the first air outlet 352. The distribution density of the second air outlet 362 is greater than the distribution density of the first air outlet, and the aperture of the second air outlet 362 is smaller than the aperture of the first air outlet 352, so that the gas is first roughly diverted through the first air outlet 352 and then finely diverted through the second air outlet 362, so that the gas entering the cavity through the air outlet mechanism 302 is as uniform as possible in the direction away from the core area 3123, which is beneficial to improving the uniformity of the thin film deposited on the wafer.

[0053] The gas outlet surface 312 has a plurality of gas outlet holes 322 , and the gas outlet holes 322 allow gas to enter the chamber of the thin film deposition chamber through the gas outlet holes 322 .

[0054] The gas outlet surface 312 includes a central area 3121 and an edge area 3122 surrounding the central area 3121. When a deposition reaction occurs in the thin film deposition chamber connected to the ventilation panel 300, a thin film is deposited not only on the wafer surface but also on the chamber sidewall and the gas outlet surface 312. Due to the influence of the air flow distribution inside the chamber, the film distribution on the gas outlet surface 312 is uneven, wherein the film grown in the edge area 3122 is relatively thick, while the film grown in the central area 3121 is relatively thin.

[0055] The heating mechanism 303 is used to heat the gas outlet surface 312 in different zones. Specifically, the heating mechanism 303 is used to make the temperature of the edge zone 3122 higher than the temperature of the center zone 3121 .

[0056] The heating mechanism 303 may be disposed in the first gas outlet plate 332 , on the surface of the first gas outlet plate 332 , in the second gas outlet plate 342 , or on the surface of the second gas outlet plate 342 , so that the heating mechanism 303 heats the gas outlet surface 312 .

[0057] Figure 7Schematic diagram of the relationship between film deposition rate and temperature within a certain temperature range. Figure 8 Schematic diagram of the relationship between film etching rate and temperature within a certain temperature range.

[0058] pass Figure 7 and Figure 8 It can be seen that the temperature of the outlet surface 312 is negatively correlated with the deposition rate of the thin film on the outlet surface 312, and the temperature of the outlet surface 312 is positively correlated with the etching rate of the thin film on the outlet surface 312, so that the heating mechanism 303 makes the temperature of the edge area 3122 higher than the temperature of the central area 3121, which can make the thin film deposition rate of the edge area 3122 lower than the thin film deposition rate of the central area 3121. At the same time, it can also make the thin film etching rate on the edge area 3122 higher than the thin film etching rate on the central area 3121, which is conducive to improving the uniformity of thin film etching on the outlet surface 312, and further improve the reliability of preparing the target thin film on the wafer using the thin film deposition chamber of the ventilation panel 300. In addition, because the etching rate of the thin film on the outlet surface 312 is positively correlated with the temperature of the outlet surface 312, the heating mechanism 303 heats the outlet surface 312 to accelerate the rate of etching the thin film by the cleaning gas, thereby saving the amount of cleaning gas used, which is conducive to reducing costs.

[0059] It should be noted that the heating mechanism 303 can heat the gas outlet surface 312 only when a deposition reaction occurs in the thin film deposition chamber, and does not heat the gas outlet surface 312 when a clean gas is used. At this time, the heating mechanism 303 heats the gas outlet surface 312, so that the film deposition rate of the edge area 3122 is lower than the film deposition rate of the central area 3121, so that the film on the edge area 3122 is thinner and the film on the central area 3121 is thicker. When the clean gas is used to etch the thin film on the gas outlet surface 312, due to the distribution of airflow and plasma in the chamber, the position of the central area 3121 is etched faster, while the edge area 3122 is etched slower, so that the thin film on the gas outlet surface 312 is finally etched evenly. The heating mechanism 303 can also heat the outlet surface 312 only when a clean gas is used to etch the thin film on the outlet surface 312. Due to the influence of the airflow distribution inside the chamber, the thin film grown in the edge area 3122 is often thicker, while the thin film grown in the center area 3121 is thinner. When a clean gas is used to etch the thin film on the outlet surface 312, the heating mechanism 303 can make the temperature of the edge area 3122 higher than the temperature of the center area 3121, and make the thin film etching rate in the edge area 3122 higher than the thin film etching rate in the center area 3121, so that the thin film on the center area 3121 is finally etched cleanly while the thin film on the edge area 3122 is also etched cleanly, so that the thin film on the outlet surface 312 is finally evenly etched. In addition, the heating mechanism 303 can not only heat the gas outlet surface 312 when the deposition reaction occurs in the thin film deposition chamber, but also heat the gas outlet surface 312 when the clean gas is used to etch the thin film on the gas outlet surface 312, so that the thin film deposition rate in the edge area 3122 is lower than the thin film deposition rate in the central area 3121. At the same time, the thin film etching rate on the edge area 3122 can be higher than the thin film etching rate in the central area 3121, so that the thin film on the gas outlet surface 312 is finally etched uniformly.

[0060] Fig. 9 Another schematic diagram of a top view of the structure of the heating mechanism and the air outlet surface corresponding to the embodiment of the present disclosure.

[0061] Also refer to Figure 5 and Fig. 9 In some embodiments, the central area 3121 includes: a core area 3123, and a plurality of transition areas 3124 distributed sequentially around the periphery of the core area 3123 and away from the core area 3123; wherein the heating component is further configured to heat the gas outlet surface 312 so that the temperatures of the plurality of transition areas 3124 distributed sequentially along the direction away from the core area 3123 gradually increase, wherein the temperature of the transition area 3124 adjacent to the edge area 3122 may be lower than or equal to the temperature of the edge area 3122.

[0062] The core area 3123 is located in the central area 3121. When a deposition reaction occurs in the thin film deposition chamber connected to the ventilation panel 300, a thin film is deposited not only on the wafer surface, but also on the gas outlet surface 312. Due to the influence of airflow distribution, the film thickness in the direction away from the core area 3123 can gradually increase, and the film etching rate in the direction away from the core area 3123 gradually decreases, so that the temperature of the multiple transition areas 3124 of the heating component distributed in sequence along the direction away from the core area 3123 gradually increases, and the temperature of the gas outlet surface 312 is negatively correlated with the deposition rate of the thin film on the gas outlet surface 312, and the temperature of the gas outlet surface 312 is positively correlated with the etching rate of the thin film on the gas outlet surface 312. The deposition rate of the thin film in the direction away from the core area 3123 can be reduced while the etching rate of the thin film in the direction away from the core area 3123 can be increased, which is beneficial to improve the uniformity of film etching on the gas outlet surface 312, and further improve the reliability of preparing the target thin film on the wafer using the thin film deposition chamber of the ventilation panel 300.

[0063] Fig.10 A schematic diagram of a top view of the structure of the air outlet surface provided in an embodiment of the present disclosure, wherein the arrow in the figure points to the direction in which the temperature of the air outlet surface increases under the action of the heating mechanism.

[0064] Also refer to Figure 5 , Fig. 9 and Fig.10 Under the action of the heating mechanism 303, the temperature of the transition zone 3124 can be lower than the temperature of the edge zone 3122. At this time, in the direction away from the core zone 3123, that is, in the direction indicated by the arrow, the temperature of each area on the outlet surface increases gradually.

[0065] Continue to refer Figure 5 and Fig. 9 In some embodiments, the heating mechanism 303 may include: a plurality of heating units 313 and a controller (not shown), wherein the heating units 313 correspond to the core area 3123, the transition area 3124, and the edge area 3122 one by one, and the heating units 313 are arranged on the corresponding core area 3123, the transition area 3124, and the edge area 3122. The controller is connected to the heating unit 313 and is used to control the heating unit 313 to heat.

[0066] The heating mechanism 303 includes a plurality of heating units 313 , and the heating mechanism 303 heats the core region 3123 , the transition region 3124 , and the edge region 3122 through the heating units 313 .

[0067] It should be noted that the heating unit 313 can be partially laid in the corresponding positions of the core area 3123, the transition area 3124 and the edge area 3122, so as to heat the core area 3123, the transition area 3124 and the edge area 3122. The heating unit 313 can also be fully laid in the corresponding positions of the core area 3123, the transition area 3124 and the edge area 3122, so as to heat the core area 3123, the transition area 3124 and the edge area 3122.

[0068] The controller is used to connect with the heating unit 313 to control the heating unit 313 to heat.

[0069] In some examples, the number of heating units 313 can be 2 to 10, for example, 2, 3, 4, 5, 6, 7, 8, 9 or 10. The number of heating units 313 within this range can ensure that the heating mechanism 303 makes the temperature of the edge area 3122 higher than that of the center area 3121 while avoiding the problem of excessive cost caused by setting too many heating units 313.

[0070] It is understandable that when there are two heating units 313, one heating unit 313 is used to heat the core area 3123, and the other heating unit 313 is used to heat the edge area 3122. At this time, the transition area 3124 is not provided with a corresponding heating unit 313 to heat the transition area 3124.

[0071] In some other examples, the number of heating units 313 may be more than 10, such as 11, 15, 20, etc.

[0072] In a specific example, there are four heating units 313. The heating unit 313 corresponding to the core zone 3123 heats the core zone 3123 to 75°C, the heating unit 313 corresponding to the transition zone 3124 adjacent to the core zone 3123 heats the transition zone 3124 to 85°C, the heating unit 313 corresponding to the transition zone 3124 adjacent to the edge zone 3122 heats the transition zone 3124 to 95°C, and the heating unit 313 corresponding to the edge zone 3122 heats the edge zone 3122 to 105°C.

[0073] In some examples, the temperature difference between the core area 3123 heated by the heating mechanism 303 and the edge area 3122 heated by the heating mechanism 303 is 10°C-80°C, for example, 10°C, 20°C, 30°C, 40°C, 50°C, 60°C, 70°C or 80°C. When the temperature difference is within this range, the film deposition rate of the edge area 3122 can be lower than the film deposition rate of the core area 3123, and the film etching rate on the edge area 3122 can be higher than the film etching rate on the core area 3123, which is beneficial to improve the uniformity of film etching on the gas outlet surface 312, and further improve the reliability of preparing the target film on the wafer using the film deposition chamber of the ventilation panel 300.

[0074] In some embodiments, the heating unit 313 corresponding to the transition zone 3124 may be a closed ring structure; the heating unit 313 corresponding to the edge zone 3122 may be a closed ring structure; and the heating unit 313 corresponding to the core zone 3123 may be a circular structure. Such an arrangement can ensure that the heating unit 313 on the transition zone 3124 can heat the corresponding parts on the circumference of the transition zone 3124, the heating unit 313 on the edge zone 3122 can heat the corresponding parts on the circumference of the edge zone 3122, and the heating unit 313 on the core zone 3123 can heat the parts on the circumference of the core zone 3123.

[0075] In some examples, the ring width of the core region 3123, the ring width of the transition region 3124, and the ring width of the edge region 3124 may be equal in the direction away from the core region 3123. In other examples, the ring width of the core region 3123, the ring width of the transition region 3124, and the ring width of the edge region 3124 may be unequal in the direction away from the core region 3123.

[0076] In some embodiments, the heating unit 313 includes a heating wire. In this configuration, the heating effect of the heating unit 313 can be achieved by generating heat through a resistive heating effect when current flows through the heating wire.

[0077] In some embodiments, the controller is configured to provide current to each heating unit 313 , wherein the current provided by the controller to adjacent heating units 313 gradually increases in a direction away from the core region 3123 .

[0078] The controller provides current to the heating unit 313, so that the current flows through the heating wire of the heating unit 313 to generate heat by resistance thermal effect to achieve the heating effect. The current value of the current flowing through the heating unit 313 is positively correlated with the amount of heat generated. In the direction away from the core area 3123, the current provided by the controller to the adjacent heating unit 313 gradually increases, so that the temperature of the multiple transition areas 3124 distributed in sequence in the direction away from the core area 3123 gradually increases, and the temperature of the edge area 3122 is the highest.

[0079] In some embodiments, the resistances of adjacent heating units 313 gradually increase in a direction away from the core region 3123. The controller is further configured to provide the same current to each heating unit 313.

[0080] The controller provides the same current to each heating unit 313. At this time, the heat generated by the heating unit 313 is positively correlated with the resistance value of the heating unit 313. In the direction away from the core area 3123, the resistance of adjacent heating units 313 gradually increases, so that the temperatures of multiple transition zones 3124 distributed in sequence along the direction away from the core area 3123 gradually increase, and the temperature of the edge area 3122 is the highest.

[0081] In some embodiments, the heating mechanism 303 may be disposed inside the guide plate 301. The number of gas guide channels 321 in the guide plate 301 may be less than the number of gas outlets in the gas outlet mechanism 302, so that the heating mechanism 303 disposed inside the guide plate 301 is not likely to affect the gas guide channels 321, so that the process of the heating unit 313 can be relatively simple.

[0082] In the embodiment of the ventilation panel 300 described above, the temperature of the edge area 3122 is made higher than the temperature of the center area 3121 by setting the heating mechanism 303. On the one hand, the film deposition rate of the edge area 3122 can be made lower than the film deposition rate of the center area 3121, thereby avoiding the problem that the film deposited on the center area 3121 is thinner and the film deposited on the edge area 3122 is thicker due to the airflow distribution. On the other hand, the film etching rate on the edge area 3122 can be made higher than the film etching rate on the center area 3121, thereby avoiding the problem that the film etching rate on the center area 3121 is higher and the film etching rate on the edge area 3122 is lower due to the airflow distribution. The above two aspects are conducive to improving the uniformity of film etching on the outlet surface 312, and can improve the reliability of preparing the target film on the wafer using the film deposition chamber of the ventilation panel 300. In addition, since the etching rate of the thin film on the outlet surface 312 is positively correlated with the temperature of the outlet surface 312, the heating mechanism 303 heats the outlet surface 312 to accelerate the rate at which the cleaning gas etches the thin film, thereby saving the amount of cleaning gas used and helping to reduce costs.

[0083] Correspondingly, another embodiment of the present disclosure further provides a thin film deposition chamber having a ventilation panel according to any of the above embodiments. The thin film deposition chamber provided by another embodiment of the present disclosure will be described in detail below in conjunction with the accompanying drawings. For the parts that are the same or corresponding to the previous embodiment, reference can be made to the corresponding description of the previous embodiment, and will not be described in detail below.

[0084] Fig.11 A schematic diagram of the structure of a thin film deposition chamber provided in an embodiment of the present disclosure.

[0085] refer to Fig.11 The thin film deposition chamber includes: a chamber 400, a heating base 401, an exhaust port 402 and an air inlet pipe 403. The heating base 401 is arranged at the bottom of the chamber 400 for carrying the wafer 11. The exhaust port 402 is arranged on the side wall of the chamber 400. The air inlet pipe 403 is located at the top of the chamber 400. The thin film deposition chamber also includes a ventilation panel 300 of any of the above-mentioned embodiments, the ventilation panel 300 is located in the chamber 400, the air inlet hole 311 of the ventilation panel 300 is connected to the air inlet pipe 403, and the air outlet surface 312 of the ventilation panel 300 is opposite to the heating base 301. The thin film deposition chamber also includes a cleaning component, which is used to etch the thin film on the side wall of the chamber 400 and the air outlet surface 312.

[0086] The thin film deposition chamber is used to realize CVD reaction or ALD reaction to obtain the target thin film. Among them, CVD includes atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), ultrahigh vacuum chemical vapor deposition (UHVCVD), metal-organic chemical vapor deposition (MOCVD) or plasma-enhanced chemical vapor deposition (PECVD).

[0087] The chamber 400 provides a reaction environment for a CVD reaction or an ALD reaction.

[0088] The heating base 401 is used to support the wafer 11 . In some cases, the heating base 401 can increase the temperature of the support surface of the heating base 401 supporting the wafer 11 , so as to improve the efficiency and quality of depositing a thin film on the wafer 11 .

[0089] The wafer 11 may be a silicon wafer, a germanium wafer, or a silicon-germanium wafer.

[0090] The exhaust port 402 is used to exhaust the byproducts and waste gas of the reaction in the chamber 400 .

[0091] The air intake pipeline 403 is located at the top of the chamber 400 and is used to connect to the air intake pipe for air intake, so that the gas can enter the chamber 400 through the air intake hole 311 connected to the air intake pipeline 403.

[0092] The cleaning assembly is used to etch the thin film on the side wall of the chamber 400 and the gas outlet surface 312 to clean the chamber 400. The cleaning assembly includes a remote plasma controller 404, which is used to convert the cleaning gas into a plasma state to clean the thin film on the side wall of the chamber 400 and the gas outlet surface 312.

[0093] In some examples, the thin film deposition chamber further includes: a ceramic set 405, which is located on the side wall of the chamber to protect the side wall of the chamber. The ceramic set 405 may include boron nitride, silicon carbide or aluminum oxide, etc. The ceramic set 405 has high hardness, wear resistance and high temperature resistance, and can protect the side wall of the chamber 400.

[0094] In some examples, the thin film deposition chamber is a plasma chemical vapor deposition chamber, and the thin film deposition chamber further includes a radio frequency power supply 406, and the radio frequency power supply 406 is used to provide an electric field required to form plasma.

[0095] Those skilled in the art can understand that the above-mentioned embodiments are specific examples for realizing the present disclosure, and in practical applications, various changes can be made to them in form and details without departing from the spirit and scope of the present disclosure. Any person skilled in the art can make their own changes and modifications without departing from the spirit and scope of the present disclosure, so the protection scope of the present disclosure shall be based on the scope defined in the claims.

Claims

1. A thin film deposition chamber, characterized in that: include: Chamber; A heating base, which is disposed at the bottom of the chamber and is used to carry the wafer; An air extraction port, the air extraction port being arranged on a side wall of the chamber; an air intake pipeline, the air intake pipeline being located at the top of the chamber; A ventilation panel, the ventilation panel is located in the chamber, the air inlet of the ventilation panel is connected to the air inlet pipeline, and the air outlet surface of the ventilation panel is directly opposite to the heating base; The ventilation panel is used to provide gas to the chamber of the thin film deposition chamber, and the ventilation panel includes: a guide plate, the guide plate has an air inlet and a gas guide channel connected to the air inlet, the air inlet is used to connect to the air inlet pipe for providing gas; an air outlet mechanism, the air outlet mechanism has an air outlet surface and a plurality of air outlets, the air outlets are connected to the gas guide channel and penetrate the air outlet surface, the air outlet surface includes a central area and an edge area surrounding the central area; a heating mechanism, the heating mechanism is used to heat the air outlet surface so that the temperature of the edge area is higher than the temperature of the central area, and the heating mechanism is arranged inside the guide plate; A cleaning component, the cleaning component is used to etch the thin film on the side wall of the chamber and the gas outlet surface; The heating mechanism is used to heat the gas outlet surface when a deposition reaction occurs in the thin film deposition chamber, so that the film deposition rate in the edge area of ​​the gas outlet surface is lower than the film deposition rate in the central area of ​​the gas outlet surface, and is also used to heat the gas outlet surface when a clean gas is used to etch the thin film on the gas outlet surface, so that the film etching rate in the edge area of ​​the gas outlet surface is higher than the film etching rate in the central area of ​​the gas outlet surface.

2. The thin film deposition chamber according to claim 1, characterized in that: The central area includes: a core area, and a plurality of transition areas sequentially distributed around the periphery of the core area in a direction away from the core area; Wherein, the heating mechanism is further configured to heat the air outlet surface so that the temperatures of the multiple transition zones distributed in sequence along the direction away from the core zone gradually increase, wherein the temperature of the transition zone adjacent to the edge zone is lower than or equal to the temperature of the edge zone.

3. The thin film deposition chamber according to claim 2, characterized in that: The heating mechanism comprises: A plurality of heating units, wherein the heating units correspond to the core area, the transition area, and the edge area one by one, and the heating units are arranged on the corresponding core area, the transition area, and the edge area; A controller is connected to the heating unit and is used to control the heating of the heating unit.

4. The thin film deposition chamber according to claim 3, characterized in that: The heating unit corresponding to the transition zone is a closed ring structure; the heating unit corresponding to the edge zone is a closed ring structure; and the heating unit corresponding to the core zone is a circular structure.

5. The thin film deposition chamber according to claim 3, characterized in that: The heating unit includes a heating wire.

6. The thin film deposition chamber according to claim 5, characterized in that: The controller is configured to provide current to each of the heating units, wherein the current provided by the controller to adjacent heating units gradually increases in a direction away from the core area.

7. The thin film deposition chamber according to claim 5, characterized in that: In a direction away from the core area, the resistances of adjacent heating units gradually increase; the controller is also configured to provide the same current to each heating unit.

8. The thin film deposition chamber according to claim 1, characterized in that: The heating mechanism is arranged inside the guide plate.

9. The thin film deposition chamber according to claim 1, wherein the gas outlet mechanism comprises: A first gas outlet plate, wherein the first gas outlet plate has a plurality of first gas outlet holes penetrating the first gas outlet plate, and the first gas outlet holes are connected to the gas guide channel; a second air outlet plate, wherein the second air outlet plate and the guide plate are respectively located on two opposite sides of the first air outlet plate, the second air outlet plate has a plurality of second air outlet holes penetrating the second air outlet plate, the second air outlet holes are connected to the first air outlet holes, the distribution density of the second air outlet holes is greater than the distribution density of the first air outlet holes, and the aperture of the second air outlet holes is smaller than the aperture of the first air outlet holes; The heating mechanism is arranged in the first gas outlet plate, on the surface of the first gas outlet plate, in the second gas outlet plate, or on the surface of the second gas outlet plate.

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