Radiation damage repair circuit, method and device
By connecting the switch assembly on the silicon -based detection device and connecting the current source, the control current provides a high temperature environment to repair the radiation damage of the detection device, solve the tedious and low efficiency of the existing technology, and achieve a fast and effectiveness Repair effect.
CN118231484BActive Publication Date: 2025-01-24HANGZHOU HIKVISION DIGITAL TECHNOLOGY CO LTD
Patent Information
- Application Number
- CN202410619548.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-17
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2044-05-17
AI Technical Summary
Technical Problem
The prior art is difficult to quickly and effectively repair the radiation damage of silicon-based detection devices in practical applications, affecting their performance and life.
Method used
By connecting switch components on the silicon -based detection device, and connecting the current source at both ends of the detection device and the switch component, the control switch component and the current source are connected or disconnected. repair.
Benefits of technology
Radiation damage can be repaired simply and quickly without disassembling the detection device, significantly improving repair efficiency and convenience and avoiding unnecessary power loss.
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Smart Images
Figure CN118231484B_ABST
Abstract
The embodiments of the present application disclose a radiation damage repair circuit, method and device to solve the problem that the process of repairing radiation damage to silicon-based detection devices is cumbersome and the repair efficiency is low. The radiation damage repair circuit includes: a silicon-based detection device, a switch component and a current source, wherein the silicon-based detection device and the switch component are connected in series, and the current source is connected to the silicon-based detection device through the switch component; when the silicon-based detection device meets the radiation damage repair conditions, the switch component is connected to the current source; the current source provides current to the silicon-based detection device through the switch component; when the silicon-based detection device does not meet the radiation damage repair conditions, the switch component is disconnected from the current source for detection. The present application can improve the convenience and repair efficiency of radiation damage repair for silicon-based detection devices.
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Citation Information
Patent Citations
Radiation detector
JP2004125524A
X-ray inspection apparatus
WO2009101772A1
Photon counting detector and photon counting method
WO2023186513A1