A magnetoresistive element, a magnetoresistive sensor and a method for manufacturing the same

Abstract

The present invention relates to the field of magnetic field measurement technology, and discloses a magnetoresistive element, a magnetoresistive sensor and a manufacturing method thereof. The magnetoresistive element comprises a substrate, a first magnetic flux concentrator and a second magnetic flux concentrator having a symmetrical closed area, a plurality of first magnetic stacks and a second magnetic stack; each first magnetic stack is adjacent to the outer side of the first magnetic flux concentrator, and the sensitive axis is all toward the inner side of the first magnetic flux concentrator, and the sensitive axes of adjacent first magnetic stacks are axially symmetrical; each second magnetic stack is adjacent to the outer side of the second magnetic flux concentrator, and the sensitive axis is all toward the outer side of the second magnetic flux concentrator; the output signal of the Wheatstone bridge formed by coupling each first magnetic stack and the second magnetic stack can linearly respond to the X-axis magnetic field, the Y-axis magnetic field or the Z-axis magnetic field. The magnetoresistive element of the present invention has different magnetic field sensitivities by changing the coupling mode of each first magnetic stack and the second magnetic stack, and realizes an integrated magnetoresistive sensor with three-axis sensitivity, which has high measurement accuracy.

Description

Technical Field

[0001] The present invention relates to the field of magnetic field measurement, and in particular to a magnetoresistive element, a magnetoresistive sensor and a manufacturing method thereof. Background Art

[0002] Magnetic sensors are widely used in various fields such as positioning, angle detection, speed detection, acceleration detection, force measurement and magnetic storage. According to different measurement principles, magnetic sensors can be divided into: magnetic sensors based on the Hall effect of semiconductor materials, magnetoresistive sensors based on anisotropic magnetoresistance effect (AMR), magnetoresistive sensors based on giant magnetoresistance effect (GMR) and magnetoresistive sensors based on tunneling magnetoresistance effect (TMR). Among them, magnetoresistive sensors have a wide range of uses due to their high sensitivity and low power consumption.

[0003] The magnetic field itself is a vector field, and magnetoresistive sensors usually involve the measurement of magnetic field signals in three directions: X-axis, Y-axis, and Z-axis.

[0004] Magnetoresistive sensors based on AMR, GMR or TMR can only detect magnetic fields in a single direction in three-dimensional space; when measuring magnetic field signals in the three directions of the X-axis, Y-axis and Z-axis in space, it is necessary to first form an X-axis magnetoresistive sensor, a Y-axis magnetoresistive sensor and a Z-axis magnetoresistive sensor respectively, and then assemble them to obtain a three-axis magnetoresistive sensor. The position accuracy of the three-axis magnetoresistive sensor is low, which affects the measurement accuracy of the sensor.

[0005] The above contents are only used to assist in understanding the technical solution of the present invention and do not constitute an admission that the above contents are prior art. Summary of the invention

[0006] The purpose of the present invention is to provide a magnetoresistive element, a magnetoresistive sensor and a method for manufacturing the same, aiming to solve the problem that the existing magnetoresistive sensors are not sensitive to the X-axis magnetic field, the Y-axis magnetic field or the Z-axis magnetic field, and the low position accuracy affects the sensor measurement accuracy when assembled into a three-axis magnetoresistive sensor.

[0007] To achieve the above object, a first aspect of the present invention provides a magnetoresistive element, the magnetoresistive element comprising:

[0008] a substrate having a substrate plane;

[0009] A first magnetic flux concentrator and a second magnetic flux concentrator having symmetrical closed areas, which are located above the substrate;

[0010] A plurality of first magnetic stacks, each of which is located above the substrate and adjacent to the outer side of the first magnetic flux concentrator, and its sensitive axis is oriented toward the inner side of the first magnetic flux concentrator; the sensitive axes of adjacent first magnetic stacks are axially symmetrical;

[0011] A plurality of second magnetic stacks, each of which is located above the substrate and adjacent to the outer side of the second magnetic flux concentrator, and its sensitive axis is oriented toward the outer side of the second magnetic flux concentrator; the sensitive axis directions of adjacent second magnetic stacks are axially symmetrical;

[0012] Each of the first magnetic stacks and the second magnetic stacks is coupled to form a Wheatstone bridge, and its output signal can linearly respond to an X-axis magnetic field, a Y-axis magnetic field or a Z-axis magnetic field; wherein the magnetic field directions of the X-axis magnetic field and the Y-axis magnetic field are perpendicular to each other and parallel to the substrate plane, and the magnetic field direction of the Z-axis magnetic field is perpendicular to the substrate plane.

[0013] According to some embodiments of the present invention, the sensitive axis of each of the first magnetic stacks extends from the first magnetic stack toward the center of the first magnetic flux concentrator, and forms a first angle or other angle with the magnetic field direction of the X-axis magnetic field; the first angle is an acute angle.

[0014] According to some embodiments of the present invention, the sensitive axis of each second magnetic stack extends from the center of the first magnetic flux concentrator toward the first magnetic stack, and forms the first angle or other angles with the magnetic field direction of the X-axis magnetic field.

[0015] According to some embodiments of the present invention, magnetic stack one, magnetic stack two, magnetic stack three, and magnetic stack four in each of the first magnetic stacks are arranged clockwise; wherein, the axis of symmetry of the sensitive axis of magnetic stack one and the magnetic stack two and the axis of symmetry of the sensitive axis of magnetic stack three and the magnetic stack four are both parallel to the magnetic field direction of the Y-axis magnetic field; the axis of symmetry of the sensitive axis of magnetic stack three and the magnetic stack two and the axis of symmetry of the sensitive axis of magnetic stack one and the magnetic stack four are both parallel to the magnetic field direction of the X-axis magnetic field.

[0016] According to some embodiments of the present invention, magnetic stack five, magnetic stack six, magnetic stack seven, and magnetic stack eight in each of the second magnetic stacks are arranged clockwise; wherein, the sensitive axis symmetry axes of the magnetic stack five and the magnetic stack six and the sensitive axis symmetry axes of the magnetic stack seven and the magnetic stack eight are both parallel to the magnetic field direction of the Y-axis magnetic field; the sensitive axis symmetry axes of the magnetic stack six and the magnetic stack seven and the sensitive axis symmetry axes of the magnetic stack five and the magnetic stack eight are both parallel to the magnetic field direction of the X-axis magnetic field.

[0017] According to some embodiments of the present invention, the sensitive axis direction of the magnetic stack one is parallel to the sensitive axis direction of the magnetic stack seven, and the angle between the sensitive axis direction and the magnetic field direction of the X-axis magnetic field is an acute angle.

[0018] According to some embodiments of the present invention, the magnetic resistance formed by the series coupling of the magnetic stack one and the magnetic stack two and the magnetic resistance formed by the series coupling of the magnetic stack three and the magnetic stack four have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the Y-axis magnetic field.

[0019] According to some embodiments of the present invention, the magnetic resistance formed by the series coupling of the magnetic stack one and the magnetic stack four and the magnetic resistance formed by the series coupling of the magnetic stack three and the magnetic stack two have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the X-axis magnetic field.

[0020] According to some embodiments of the present invention, the magnetic resistance formed by the series coupling of the magnetic stack five and the magnetic stack six and the magnetic resistance formed by the series coupling of the magnetic stack seven and the magnetic stack eight have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the Y-axis magnetic field.

[0021] According to some embodiments of the present invention, the magnetic resistance formed by the serial coupling of the magnetic stack five and the magnetic stack eight and the magnetic resistance formed by the magnetic stack seven and the magnetic stack six have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the X-axis magnetic field.

[0022] According to some embodiments of the present invention, the first magnetic flux concentrator is in a ring shape; each of the first magnetic stacks is at the same distance from the edge of the first magnetic flux concentrator, so that they are sensitive to the Z-axis magnetic field and have the same first response.

[0023] According to some embodiments of the present invention, the second magnetic flux concentrator is in a ring shape; each of the second magnetic stacks is at the same distance from the edge of the second magnetic flux concentrator, so that it is sensitive to the Z-axis magnetic field and has the same second response; the second response is opposite to the value of the first response.

[0024] According to some embodiments of the present invention, the magnetoresistive element also includes a plurality of switch units; each of the switch units is located above the substrate, and is electrically coupled to each of the first magnetic stacks and each of the second magnetic stacks to form different Wheatstone bridges, so that the magnetoresistive element is sensitive to the X-axis magnetic field when forming the first Wheatstone bridge, is sensitive to the Y-axis magnetic field when forming the second Wheatstone bridge, and is sensitive to the Z-axis magnetic field when forming the third Wheatstone bridge; the Wheatstone bridge includes a first bridge arm, a second bridge arm, a third bridge arm, and a fourth bridge arm coupled to each other.

[0025] According to some embodiments of the present invention, when forming the first Wheatstone bridge, the magnetic stack two and the magnetic stack three are coupled in series to form the first bridge arm, the magnetic stack one and the magnetic stack four are coupled in series to form the second bridge arm, the magnetic stack five and the magnetic stack eight are coupled in series to form the third bridge arm, and the magnetic stack six and the magnetic stack seven are coupled in series to form the fourth bridge arm.

[0026] According to some embodiments of the present invention, when forming the second Wheatstone bridge, the magnetic stack one and the magnetic stack two are coupled in series to form the first bridge arm, the magnetic stack four and the magnetic stack three are coupled in series to form the second bridge arm, the magnetic stack eight and the magnetic stack seven are coupled in series to form the third bridge arm, and the magnetic stack five and the magnetic stack six are coupled in series to form the fourth bridge arm.

[0027] According to some embodiments of the present invention, when forming the third Wheatstone bridge, the magnetic stack one in each of the first magnetic stacks is coupled in series with the magnetic stack two, the magnetic stack three, or the magnetic stack four to form the first bridge arm, and the remaining first magnetic stacks are coupled in series to form the third bridge arm; the magnetic stack five in each of the second magnetic stacks is coupled in series with the magnetic stack six, the magnetic stack seven, or the magnetic stack eight to form the second bridge arm, and the remaining second magnetic stacks are coupled in series to form the fourth bridge arm.

[0028] According to some embodiments of the present invention, the switch unit is a MOS switch.

[0029] According to some embodiments of the present invention, the first magnetic stack and the second magnetic stack are one of AMR, TMR or GMR; and the material of the first magnetic flux concentrator and the second magnetic flux concentrator is soft magnetic material.

[0030] To achieve the above object, a second aspect of the present invention provides a method for manufacturing a magnetoresistive element, the method comprising:

[0031] (1) forming a multilayer film on a substrate and obtaining a plurality of magnetic stacks through tape-out;

[0032] (2) forming a second magnetic flux concentrator and a third magnetic flux concentrator in a symmetrical closed area on the substrate, wherein the second magnetic stack in each of the magnetic stacks is adjacent to an outer position of the second magnetic flux concentrator, and the first magnetic stack in each of the magnetic stacks is adjacent to an inner position of the third magnetic flux concentrator;

[0033] (3) performing high temperature magnetic field annealing so that the sensitive axis of each of the first magnetic stacks faces the inner side of the third magnetic flux concentrator, and the sensitive axis of each of the second magnetic stacks faces the outer side of the second magnetic flux concentrator;

[0034] (4) The third magnetic flux concentrator is removed, and a first magnetic flux concentrator concentric with the third magnetic flux concentrator is formed on the inner side of each of the first magnetic stacks to obtain the magnetic resistance element.

[0035] To achieve the above object, a second aspect of the present invention provides a magnetoresistive sensor, which includes a magnetoresistive element. The magnetoresistive element is the magnetoresistive element described above, or a magnetoresistive element manufactured by the above manufacturing method.

[0036] In summary, the magnetoresistive element disclosed in the present invention includes a substrate, a first magnetic flux concentrator and a second magnetic flux concentrator having a symmetrical closed area, a plurality of first magnetic stacks and a plurality of second magnetic stacks; each first magnetic stack is adjacent to the outer side of the first magnetic flux concentrator, and the sensitive axis is all toward the inner side of the first magnetic flux concentrator, and the sensitive axes of adjacent first magnetic stacks are axially symmetrical; each second magnetic stack is adjacent to the outer side of the second magnetic flux concentrator, and the sensitive axis is all toward the outer side of the second magnetic flux concentrator. The output signal of the Wheatstone bridge formed by coupling each first magnetic stack and the second magnetic stack can linearly respond to the X-axis magnetic field, the Y-axis magnetic field or the Z-axis magnetic field. The magnetoresistive element of the present invention has different magnetic field sensitivities by changing the coupling mode of each first magnetic stack and the second magnetic stack, and realizes an integrated magnetoresistive sensor with three-axis sensitivity, which has high measurement accuracy and can avoid the problem of low measurement accuracy caused by low position accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a schematic structural diagram of a magnetoresistive element according to an embodiment of the present invention;

[0038] Figure 2 is another structural schematic diagram of a magnetoresistive element according to an embodiment of the present invention;

[0039] Figure 3 Schematic diagram of the response of the magnetoresistive element under the +X-axis magnetic field according to an embodiment of the present invention;

[0040] Figure 4 This is a schematic diagram of a first Wheatstone bridge structure of a magnetoresistive element that is sensitive to an X-axis magnetic field according to an embodiment of the present invention;

[0041] Figure 5 Schematic diagram of the response of the magnetoresistive element under the +Y-axis magnetic field according to an embodiment of the present invention;

[0042] Figure 6 This is a schematic diagram of a second Wheatstone bridge structure of a magnetoresistive element that is sensitive to the Y-axis magnetic field in an embodiment of the present invention;

[0043] Figure 7 Schematic diagram of the response of the magnetoresistive element under the +Z-axis magnetic field according to an embodiment of the present invention;

[0044] Figure 8This is a schematic diagram of a second Wheatstone bridge structure of a magnetoresistive element that is sensitive to a Z-axis magnetic field according to an embodiment of the present invention;

[0045] Fig. 9 Schematic diagram of a magnetic stacking structure obtained in step S100 in the method for manufacturing a magnetoresistive element according to an embodiment of the present invention;

[0046] Fig.10 Schematic diagram of a magnetic stacking structure obtained in step S300 in the method for preparing a magnetoresistive element according to an embodiment of the present invention;

[0047] Fig.11 It is a structural schematic diagram of a magnetoresistive element according to another embodiment of the present invention;

[0048] Fig.12 This is a schematic structural diagram of a magnetoresistive element used for X-axis magnetic field measurement according to another embodiment of the present invention;

[0049] Fig.13 This is a schematic structural diagram of a magnetoresistive element used for Y-axis magnetic field measurement according to another embodiment of the present invention;

[0050] Fig.14 This is a schematic structural diagram of a magnetoresistive element used for Z-axis magnetic field measurement according to another embodiment of the present invention.

[0051] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0052] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0053] The magnetic field itself is a vector field, and magnetoresistive sensors usually involve the measurement of magnetic field signals in three directions: X-axis, Y-axis, and Z-axis.

[0054] Since the magnetic field sensitive direction (i.e., sensitive axis direction) of the TMR magnetoresistive sensor is within the film plane, when measuring the magnetic field signals in the three directions of the spatial X-axis, Y-axis, and Z-axis, it is necessary to first form the X-axis magnetoresistive sensor, the Y-axis magnetoresistive sensor, and the Z-axis magnetoresistive sensor, and then assemble them to obtain a three-axis magnetoresistive sensor. The position accuracy of the three-axis magnetoresistive sensor is low, which affects the measurement accuracy of the sensor.

[0055] The purpose of an embodiment of the present invention is to provide a magnetoresistive element that is sensitive to an X-axis magnetic field, a Y-axis magnetic field or a Z-axis magnetic field, and to apply it to a three-axis magnetoresistive sensor. No assembly is required, and a three-axis magnetoresistive sensor with high measurement accuracy can be obtained through one-piece molding.

[0056] like Figure 1As shown, the magnetoresistive element provided by the embodiment of the present invention includes a substrate 100 , a first magnetic flux concentrator 310 , a second magnetic flux concentrator 320 , a plurality of first magnetic stacks 210 and a plurality of second magnetic stacks 220 .

[0057] The substrate 100 has a substrate plane, and an X-axis and a Y-axis perpendicular to each other are parallel to the substrate plane.

[0058] The first magnetic flux concentrator 310 and the second magnetic flux concentrator 320 both have symmetrical closed areas. The first magnetic flux concentrator 310 and the second magnetic flux concentrator 320 are both located above the substrate 100 .

[0059] It should be noted that the materials used by the first magnetic flux concentrator and the second magnetic flux concentrator in the embodiment of the present invention are both soft magnetic materials, which can be NiFe or other materials, which are not specifically limited here.

[0060] The first magnetic flux concentrator 310 may be in a circular shape and have the same distance from the edge of each first magnetic stack 210, so that each first magnetic stack 210 can have the same response signal to the same Z-axis magnetic field more easily. The first magnetic flux concentrator 310 may also be in other shapes, which are not specifically limited here.

[0061] The second magnetic flux concentrator 320 has the same shape as the first magnetic flux concentrator, such as a circular ring. The distance between each second magnetic stack 220 and the second magnetic flux concentrator 320 should be the same and equal to the distance between the first magnetic stack 210 and the first magnetic flux concentrator 310. Thus, the first response of the first magnetic stack 210 to the Z-axis magnetic field is opposite to the second response of the second magnetic stack 220 to the Z-axis magnetic field.

[0062] Each first magnetic stack 210 is located above the substrate 100 and adjacent to the outer side of the first magnetic flux concentrator 310, and its sensitive axis is parallel to the substrate plane and faces the inner side of the first magnetic flux concentrator 310; the sensitive axes of adjacent first magnetic stacks 210 are axially symmetrical.

[0063] The first magnetic stack and the second magnetic stack are magnetoresistors based on the same magnetoresistance effect and having the same structure, and may be one of AMR, TMR or GMR, and their sensitive axes are parallel to the substrate plane.

[0064] It should be noted that the sensitive axis of each first magnetic stack extends from the first magnetic stack toward the center of the first magnetic flux concentrator, and the sensitive axis direction of each first magnetic stack forms a first angle or other angle with the X-axis direction; the first angle is an acute angle, which can be 45 degrees or any other angle between 0 and 90 degrees.

[0065] Each second magnetic stack 220 is located above the substrate 100 and adjacent to the outer side of the second magnetic flux concentrator 320, and its sensitive axis is parallel to the substrate plane and faces the outer side of the second magnetic flux concentrator 320; the sensitive axes of adjacent second magnetic stacks are axially symmetrical.

[0066] It should be noted that the sensitive axis of each second magnetic stack 220 extends from the center of the second magnetic flux concentrator 310 toward the second magnetic stack 220 , and the sensitive axis of each second magnetic stack 220 forms a first angle or other angle with the X-axis direction.

[0067] like Figure 2 As shown, the magnetoresistive element of the embodiment of the present invention includes four first magnetic stacks: magnetic stack one 211, magnetic stack two 212, magnetic stack three 213, and magnetic stack four 214. The magnetic stack one 211, magnetic stack two 212, magnetic stack three 213, and magnetic stack four 214 are arranged clockwise around the first magnetic flux concentrator 310 and are located on the outside of the first magnetic flux concentrator 310; wherein the first magnetic stack 211 is adjacent to the second magnetic stack 212 and the fourth magnetic stack 214, respectively, and the third magnetic stack is adjacent to the second magnetic stack 212 and the fourth magnetic stack 214, respectively.

[0068] In the magnetoresistive element of the embodiment of the present invention, the sensitive axes of magnetic stack one 211 and magnetic stack two 212 are symmetrical about the Y axis, and the sensitive axes of magnetic stack one 211 and magnetic stack four 214 are symmetrical about the X axis; the sensitive axes of magnetic stack three 213 and magnetic stack two 212 are symmetrical about the X axis, and the sensitive axes of magnetic stack three 213 and magnetic stack four are symmetrical about the Y axis.

[0069] like Figure 2 As shown, the magnetoresistive element of the embodiment of the present invention includes four second magnetic stacks: magnetic stack five 221, magnetic stack six 222, magnetic stack seven 223, and magnetic stack eight 224. The magnetic stack five 221, magnetic stack six 222, magnetic stack seven 223, and magnetic stack eight 224 are arranged clockwise around the second magnetic flux concentrator 320 and are located on the outside of the second magnetic flux concentrator 320; wherein the fifth magnetic stack 221 is adjacent to the sixth magnetic stack 222 and the eighth magnetic stack 224, respectively, and the seventh magnetic stack 223 is adjacent to the sixth magnetic stack 222 and the eighth magnetic stack 224, respectively.

[0070] In the magnetoresistive element of the embodiment of the present invention, the sensitive axes of the magnetic stack five 221 and the magnetic stack six 222 are symmetrical about the Y axis, and the sensitive axes of the magnetic stack five 221 and the magnetic stack eight 224 are symmetrical about the X axis; the sensitive axes of the magnetic stack seven 223 and the magnetic stack six 222 are symmetrical about the X axis, and the sensitive axes of the magnetic stack seven 223 and the magnetic stack eight are symmetrical about the Y axis.

[0071] In the magnetoresistive element of the embodiment of the present invention, the sensitive axis directions of the magnetic stack 1 and the magnetic stack 7 are parallel, and the angles between the sensitive axis directions and the X-axis are both acute angles.

[0072] The magnetoresistive element of the embodiment of the present invention can be sensitive to the X-axis magnetic field, so that its output signal can linearly respond to the X-axis magnetic field.

[0073] like Figure 3 As shown, when the +X-axis magnetic field acts on the magnetoresistive element of the embodiment of the present invention, the direction of the external magnetic field is the +X-axis direction, and the external magnetic field acts on the sensitive axis direction of the magnetic stack 1 211, the magnetic stack 4 214, the magnetic stack 6 222 and the magnetic stack 7 223, respectively, which are the same as the directions of their sensitive axes. Since the angles between their sensitive axes and the X-axis direction are the same, their resistances are reduced by △R 1 ; The external magnetic field acts on the sensitive axis direction of magnetic stack 2, magnetic stack 3, magnetic stack 5 and magnetic stack 8 in the opposite direction of their sensitive axis. Since the angle between their sensitive axis and the X-axis direction is the same, their resistance increases by △R 1 ; Among them, the △R 1 It is related to the strength of the X-axis magnetic field.

[0074] Therefore, the magnetic resistance of any two magnetic stacks among magnetic stack one 211, magnetic stack four 214, magnetic stack six 222 and magnetic stack seven 223 after being coupled in series is sensitive to the magnetic field parallel to the X-axis, and the direction of the sensitive axis is the +X-axis direction; the magnetic resistance of any two magnetic stacks among magnetic stack two 212, magnetic stack three 213, magnetic stack five 221 and magnetic stack eight 224 after being coupled in series is sensitive to the magnetic field parallel to the X-axis, and the direction of the sensitive axis is the -X-axis direction.

[0075] In the embodiment of the present invention, the magnetic resistor formed by the serial coupling of the magnetic stack 1 211 and the magnetic stack 4 214 and the magnetic resistor formed by the serial coupling of the magnetic stack 3 213 and the magnetic stack 2 212 have sensitive axes in opposite directions and parallel to the magnetic field direction of the X-axis magnetic field.

[0076] In the embodiment of the present invention, the magnetic resistor formed by the serial coupling of the fifth magnetic stack 221 and the eighth magnetic stack 224 and the magnetic resistor formed by the seventh magnetic stack 223 and the sixth magnetic stack 222 have sensitive axes in opposite directions and parallel to the magnetic field direction of the X-axis magnetic field.

[0077] In the magnetoresistive element of the embodiment of the present invention, each first magnetic stack 210 and each second magnetic stack 220 are electrically coupled to form a Wheatstone bridge having a first bridge arm L1, a second bridge arm L2, a third bridge arm L3 and a fourth bridge arm L4 coupled to each other. Figure 4 In the first Wheatstone bridge shown, magnetic stack two 212 and magnetic stack three 213 are coupled in series to form a first bridge arm, magnetic stack one 211 and magnetic stack four 214 are coupled in series to form a second bridge arm L2, magnetic stack five 221 and magnetic stack eight 224 are coupled in series to form a third bridge arm L3, and magnetic stack six 222 and magnetic stack seven 223 are coupled in series to form a fourth bridge arm L4.

[0078] When the +X-axis magnetic field acts on the magnetoresistive element of the embodiment of the present invention, the direction of the external magnetic field is the +X-axis direction, and the resistance of the first bridge arm L1 increases by 2ΔR 1 , the resistance of the second bridge arm L2 decreases by 2△R1, and the resistance of the third bridge arm L3 increases by 2△R 1 , the resistance of the fourth bridge arm L2 is reduced by 2△R 1 Therefore, the first Wheatstone bridge can be sensitive to the X-axis magnetic field.

[0079] The magnetoresistive element of the embodiment of the present invention can be sensitive to the Y-axis magnetic field, so that its output signal can linearly respond to the Y-axis magnetic field.

[0080] like Figure 5 As shown, when the +Y-axis magnetic field acts on the magnetoresistive element of the embodiment of the present invention, the direction of the external magnetic field is the +Y-axis direction, and the external magnetic field acts on the sensitive axis directions of the magnetic stack 3 213, the magnetic stack 4 214, the magnetic stack 6 222 and the magnetic stack 5 221, respectively, which are the same as the directions of their sensitive axes. Since the angles between their sensitive axes and the Y-axis direction are the same, their resistances are all reduced by △R 2 The external magnetic field acts on the sensitive axis direction of the magnetic stack 212, the magnetic stack 1 211, the magnetic stack 7 223 and the magnetic stack 8 224, respectively, and the magnetic field is opposite to the direction of the sensitive axis. Since the angle between the sensitive axis and the X-axis direction is the same, the resistance increases by △R 2 ; Among them, the △R 2 It is related to the strength of the Y-axis magnetic field.

[0081] Therefore, the magnetic resistance of any two magnetic stacks among magnetic stack three 213, magnetic stack four 214, magnetic stack six 222 and magnetic stack five 221 after being coupled in series is sensitive to the magnetic field parallel to the Y-axis, and the direction of the sensitive axis is the +Y-axis direction; the magnetic resistance of any two magnetic stacks among magnetic stack two 212, magnetic stack one 211, magnetic stack seven 223 and magnetic stack eight 224 after being coupled in series is sensitive to the magnetic field parallel to the Y-axis, and the direction of the sensitive axis is the -Y-axis direction.

[0082] In the embodiment of the present invention, the magnetic resistors formed by the serial coupling of the magnetic stack 1 211 and the magnetic stack 212 and the magnetic resistors formed by the serial coupling of the magnetic stack 3 213 and the magnetic stack 4 214 have sensitive axes in opposite directions and parallel to the magnetic field direction of the Y-axis magnetic field.

[0083] In the embodiment of the present invention, the magnetic resistor formed by the serial coupling of the fifth magnetic stack 221 and the sixth magnetic stack 222 and the magnetic resistor formed by the serial coupling of the seventh magnetic stack 223 and the eighth magnetic stack 224 have sensitive axes in opposite directions and parallel to the magnetic field direction of the Y-axis magnetic field.

[0084] In the magnetoresistive element of the embodiment of the present invention, each first magnetic stack 210 and each second magnetic stack 220 are electrically coupled to form a Wheatstone bridge having a first bridge arm L1, a second bridge arm L2, a third bridge arm L3 and a fourth bridge arm L4 coupled to each other. Figure 6 In the second Wheatstone bridge shown, magnetic stack two 212 and magnetic stack one 211 are coupled in series to form a first bridge arm, magnetic stack three 213 and magnetic stack four 214 are coupled in series to form a second bridge arm L2, magnetic stack seven 223 and magnetic stack eight 224 are coupled in series to form a third bridge arm L3, and magnetic stack six 222 and magnetic stack five 221 are coupled in series to form a fourth bridge arm L4.

[0085] When the +Y-axis magnetic field acts on the magnetoresistive element of the embodiment of the present invention, the direction of the external magnetic field is the +Y-axis direction, and the resistance of the first bridge arm L1 increases by 2ΔR 2 , the resistance of the second bridge arm L2 is reduced by 2△R 2 , the resistance of the third bridge arm L3 increases by 2△R 2 , the resistance of the fourth bridge arm L2 is reduced by 2△R 2 Therefore, the second Wheatstone bridge can be sensitive to the Y-axis magnetic field.

[0086] The magnetoresistive element of the embodiment of the present invention can be sensitive to the Z-axis magnetic field, so that its output signal can linearly respond to the Z-axis magnetic field.

[0087] like Figure 7 As shown, when the +Z-axis magnetic field acts on the magnetoresistive element of the embodiment of the present invention, the direction of the external magnetic field is the +Y-axis direction, and the external magnetic field acts on the sensitive axis directions of the magnetic stack 1 211, the magnetic stack 212, the magnetic stack 3 213 and the magnetic stack 4 214, respectively, which are the same as the directions of their sensitive axes. Since the first magnetic flux concentrator is a symmetrical closed area, its resistance is reduced by △R3; the external magnetic field acts on the sensitive axis directions of the magnetic stack 5 221, the magnetic stack 6 222, the magnetic stack 7 223 and the magnetic stack 8 224, respectively, which are opposite to the directions of their sensitive axes. Since the first magnetic flux concentrator is a symmetrical closed area, its resistance is increased by △R 3 ; Among them, the △R 3 It is related to the strength of the Z-axis magnetic field.

[0088] Therefore, the magnetic resistance of any two magnetic stacks among magnetic stack one 211, magnetic stack two 212, magnetic stack three 213 and magnetic stack four 214 after being coupled in series is sensitive to the magnetic field parallel to the Z axis, and the direction of the sensitive axis is the -Z axis direction; the magnetic resistance of any two magnetic stacks among magnetic stack five 221, magnetic stack six 222, magnetic stack seven 223 and magnetic stack eight 224 after being coupled in series is sensitive to the magnetic field parallel to the Z axis, and the direction of the sensitive axis is the +Z axis direction.

[0089] In the magnetoresistive element of the embodiment of the present invention, each first magnetic stack 210 and each second magnetic stack 220 are electrically coupled to form a Wheatstone bridge having a first bridge arm L1, a second bridge arm L2, a third bridge arm L3 and a fourth bridge arm L4 coupled to each other. Figure 8 In the third Wheatstone bridge shown, magnetic stack two 212 and magnetic stack one 211 are coupled in series to form a first bridge arm, magnetic stack six 222 and magnetic stack five 221 are coupled in series to form a second bridge arm L2, magnetic stack three 213 and magnetic stack four 214 are coupled in series to form a third bridge arm L3, and magnetic stack seven 223 and magnetic stack eight 224 are coupled in series to form a fourth bridge arm L4.

[0090] When the +Z-axis magnetic field acts on the magnetoresistive element of the embodiment of the present invention, the direction of the external magnetic field is the +Z-axis direction, and the resistance of the first bridge arm L1 increases by 2ΔR 3 , the resistance of the second bridge arm L2 is reduced by 2△R 3 , the resistance of the third bridge arm L3 increases by 2△R 3 , the resistance of the fourth bridge arm L2 is reduced by 2△R 3 Therefore, the second Wheatstone bridge can be sensitive to the Z-axis magnetic field.

[0091] Therefore, each first magnetic stack 210 and the second magnetic stack 220 of the embodiment of the present invention is coupled to form a Wheatstone bridge. By changing the coupling method of each first magnetic stack and the second magnetic stack, the magnetoresistive element can have different magnetic field sensitivities, and the output signal of the magnetoresistive element can linearly respond to the X-axis magnetic field, the Y-axis magnetic field or the Z-axis magnetic field, wherein the magnetic field directions of the X-axis magnetic field and the Y-axis magnetic field are perpendicular to each other and parallel to the substrate plane, and the magnetic field direction of the Z-axis magnetic field is perpendicular to the substrate plane.

[0092] In some embodiments of the present invention, the magnetoresistive element further includes a plurality of switch units. The switch units are deposited above the substrate and are used to electrically couple with each first magnetic stack and each second magnetic stack, so that each first magnetic stack is not directly coupled in series, and the switch units control the series coupling of each first magnetic stack and the second magnetic stack, thereby controlling the real-time coupling relationship of the magnetoresistive element and the real-time sensitive magnetic field of the magnetoresistive element.

[0093] It should be noted that the switch unit may be a MOS switch or a component manufactured based on other switch principles.

[0094] Through the switch unit, the magnetoresistive element of the embodiment of the present invention can obtain the response of the current X-axis magnetic field, Y-axis magnetic field and Z-axis magnetic field through the state change of the switch unit in a relatively short time.

[0095] The magnetoresistive element of the embodiment of the present invention is as follows Fig.11As shown, the magnetoresistive element includes switch units S1~S18; magnetic stack one 211, magnetic stack two 212, magnetic stack three 213, magnetic stack four 214, magnetic stack five 221, magnetic stack six 222, magnetic stack seven 223 and magnetic stack eight 224 are electrically coupled to each switch unit S1~S8 through 15 wire units 0~14.

[0096] The structural schematic diagram of the magnetoresistive element of the embodiment of the present invention when used to measure the X-axis magnetic field is as follows: Fig.12 As shown, among the switch units, S2, S4, S7, S8, S10, S11, S16, and S18 are in a closed state, and the remaining 10 switch units are in an open state, so that the magnetoresistive element of the embodiment of the present invention has a first Wheatstone bridge structure.

[0097] The structural schematic diagram of the magnetoresistive element of the embodiment of the present invention when used to measure the Y-axis magnetic field is as follows: Fig.13 As shown, among the switch units, S3, S5, S6, S10, S11, S13, S14, and S17 are in a closed state, and the remaining 10 switch units are in an open state, so that the magnetoresistive element of the embodiment of the present invention has a second Wheatstone bridge structure.

[0098] The structural schematic diagram of the magnetoresistive element of the embodiment of the present invention when used to measure the Z-axis magnetic field is as follows: Fig.14 As shown, among the switch units, S1, S5, S6, S9, S12, S13, S14, and S15 are in a closed state, and the remaining 10 switch units are in an open state, so that the magnetoresistive element of the embodiment of the present invention has a first Wheatstone bridge structure.

[0099] The embodiment of the present invention also provides a method for manufacturing the above-mentioned magnetoresistive element.

[0100] Specifically, the method for manufacturing the magnetoresistive element includes:

[0101] Step S100: forming a multilayer film on a substrate, and obtaining a plurality of magnetic stacks through tape-out;

[0102] Specifically, with 1 mm Si / SiO 2 The substrate is used as a base, and magnetron sputtering is used to deposit on the substrate in sequence to obtain a multilayer film; through tape-out, 8 magnetic stacks arranged in a certain order are obtained. The magnetic stack includes a pinned layer, a reference layer, a tunneling layer, and a free layer.

[0103] The schematic diagram of the magnetic stack structure obtained in this step is as follows Fig. 9As shown, magnetic stack one 211, magnetic stack two 212, magnetic stack three 213, and magnetic stack four 214 form a group, the four magnetic stacks are arranged clockwise, and adjacent magnetic stacks are arranged axially symmetrically; magnetic stack five 221, magnetic stack six 222, magnetic stack seven 223, and magnetic stack eight 224 form a group, the four magnetic stacks are arranged clockwise, and adjacent magnetic stacks are arranged axially symmetrically.

[0104] Step S200: forming a second magnetic flux concentrator and a third magnetic flux concentrator in a symmetrical closed area on a substrate, wherein the second magnetic stack in each magnetic stack is adjacent to an outer side of the second magnetic flux concentrator, and the first magnetic stack in each magnetic stack is adjacent to an inner side of the third magnetic flux concentrator;

[0105] Specifically, the third magnetic flux concentrator 330 is deposited at the outer edge of the magnetic stack 1 211 , the magnetic stack 212 , the magnetic stack 3 213 , and the magnetic stack 4 214 ; the third magnetic flux concentrator 330 has a symmetrical annular structure.

[0106] The second magnetic flux concentrator 320 is deposited at the inner edge of magnetic stack five 221 , magnetic stack six 222 , magnetic stack seven 223 , and magnetic stack eight 224 ; the diameter of the second magnetic flux concentrator 320 is smaller than the diameter of the third magnetic flux concentrator 330 .

[0107] Step S300: performing high temperature magnetic field annealing so that the sensitive axis of the first magnetic stack faces the inner side of the third magnetic flux concentrator, and the sensitive axis of each second magnetic stack faces the outer side of the second magnetic flux concentrator;

[0108] Specifically, the substrate 100 is placed in a high temperature environment and a high magnetic field environment for annealing, and the annealing temperature is higher than the Nel temperature of the pinned layer. The direction of the magnetic field used for annealing is the Z-axis direction. Since the magnetic stack 1 211, the magnetic stack 212, the magnetic stack 3 213 and the magnetic stack 4 214 are close to the inner side of the third magnetic flux concentrator 330, after the magnetic field annealing, the directions of their sensitive axes are all toward the inner side of the third magnetic flux concentrator 330; since the magnetic stack 5 221, the magnetic stack 6 222, the magnetic stack 7 223 and the magnetic stack 8 224 are close to the outer side of the second magnetic flux concentrator 320, after the magnetic field annealing, the directions of their sensitive axes are toward the inner side of the third magnetic flux concentrator.

[0109] The schematic diagram of the magnetic stacking structure obtained in this step is as follows Fig.10As shown, the sensitive axis directions of each first magnetic stack and each second magnetic stack are determined, and the sensitive axis directions of magnetic stack one 211, magnetic stack two 212, magnetic stack three 213 and magnetic stack four 214 are all toward the inner side of the third magnetic flux concentrator, that is, from the magnetic stack itself toward the center position of the third magnetic flux concentrator; the sensitive axis directions of magnetic stack five 221, magnetic stack six 222, magnetic stack seven 223 and magnetic stack eight 224 are all toward the outer side of the second magnetic flux concentrator, that is, from the center position of the second magnetic flux concentrator toward the magnetic stack itself.

[0110] Step S400: removing the third magnetic flux concentrator, and forming a first magnetic flux concentrator concentric with the third magnetic flux concentrator on the inner side of each first magnetic stack to obtain a magnetoresistive element.

[0111] Specifically, the third magnetic flux concentrator 300 is removed from the substrate, and then a first magnetic flux concentrator is formed on the inner side of magnetic stack one 211, magnetic stack two 212, magnetic stack three 213 and magnetic stack four 214; the first magnetic flux concentrator is concentric with the third magnetic flux concentrator, and its distance from magnetic stack one 211, magnetic stack two 212, magnetic stack three 213 and magnetic stack four 214 is equal.

[0112] If the magnetoresistive element of the embodiment of the present invention is fixed to be sensitive to the X-axis magnetic field, the Y-axis magnetic field, or the Z-axis magnetic field, then when forming multiple magnetic stacks in step S100, the coupling relationship between the magnetic stacks is completed in advance. For example, magnetic stack 1 and magnetic stack 4 are coupled in series, magnetic stack 2 and magnetic stack 3 are coupled in series, magnetic stack 5 and magnetic stack 8 are coupled in series, and magnetic stack 6 and magnetic stack 7 are coupled in series, thereby obtaining a magnetoresistive element sensitive to the X-axis magnetic field.

[0113] If the magnetoresistive element of the embodiment of the present invention needs to change its sensitive magnetic field, then in step S100, while forming a plurality of magnetic stacks, Fig.11 As shown, a switch unit and corresponding electrical conductors are provided.

[0114] An embodiment of the present invention further provides a magnetoresistive sensor, which includes a magnetoresistive element. The magnetoresistive element is the magnetoresistive element provided above or a magnetoresistive element manufactured by the above manufacturing method.

[0115] The magnetoresistive element in the magnetoresistive sensor provided by the embodiment of the present invention can be a magnetoresistive element that is sensitive to the X-axis magnetic field, so that the magnetoresistive sensor can be used for X-axis magnetic field measurement; it can also be a magnetoresistive element that is sensitive to the Y-axis magnetic field, so that the magnetoresistive sensor can be used for Y-axis magnetic field measurement; it can also be a magnetoresistive element that is zero-resistance to the Z-axis magnetic field, so that the magnetoresistive sensor can be used for Z-axis magnetic field measurement.

[0116] The magnetoresistive sensor provided by the embodiment of the present invention may include a magnetoresistive element sensitive to the X-axis magnetic field and a magnetoresistive element sensitive to the Y-axis magnetic field, so that the magnetoresistive sensor can be used for XY-axis magnetic field measurement.

[0117] The magnetoresistive sensor provided by the embodiment of the present invention may include three magnetoresistive elements, which are respectively sensitive to the X-axis magnetic field, the Y-axis magnetic field and the Z-axis magnetic field, so that the magnetoresistive sensor can be used for three-axis magnetic field measurement.

[0118] The magnetoresistive elements in the magnetoresistive sensor can be integrally formed on a substrate, and each magnetoresistive element has a Wheatstone bridge structure.

[0119] In summary, the magnetoresistive element disclosed in the present invention includes a substrate, a first magnetic flux concentrator and a second magnetic flux concentrator having a symmetrical closed area, a plurality of first magnetic stacks and a plurality of second magnetic stacks; each first magnetic stack is adjacent to the outer side of the first magnetic flux concentrator, and the sensitive axis is all toward the inner side of the first magnetic flux concentrator, and the sensitive axes of adjacent first magnetic stacks are axially symmetrical; each second magnetic stack is adjacent to the outer side of the second magnetic flux concentrator, and the sensitive axis is all toward the outer side of the second magnetic flux concentrator. The output signal of the Wheatstone bridge formed by coupling each first magnetic stack and the second magnetic stack can linearly respond to the X-axis magnetic field, the Y-axis magnetic field or the Z-axis magnetic field. The magnetoresistive element of the present invention has different magnetic field sensitivities by changing the coupling mode of each first magnetic stack and the second magnetic stack, and realizes an integrated magnetoresistive sensor with three-axis sensitivity, which has high measurement accuracy and can avoid the problem of low measurement accuracy caused by low position accuracy.

[0120] It should be understood that the above is only an example and does not constitute any limitation on the technical solution of the present invention. In specific applications, technicians in this field can make settings as needed, and the present invention does not limit this.

Claims

1. A magnetoresistive element, characterized in that: include: a substrate having a substrate plane; A first magnetic flux concentrator and a second magnetic flux concentrator having symmetrical closed areas, which are located above the substrate; A plurality of first magnetic stacks, each of which is located above the substrate and adjacent to the outer side of the first magnetic flux concentrator, and its sensitive axis is oriented toward the inner side of the first magnetic flux concentrator; the sensitive axes of adjacent first magnetic stacks are axially symmetrical; A plurality of second magnetic stacks, each of which is located above the substrate and adjacent to the outer side of the second magnetic flux concentrator, and its sensitive axis is oriented toward the outer side of the second magnetic flux concentrator; the sensitive axis directions of adjacent second magnetic stacks are axially symmetrical; Each of the first magnetic stack and the second magnetic stack is coupled to form a Wheatstone bridge, and its output signal can linearly respond to an X-axis magnetic field, a Y-axis magnetic field or a Z-axis magnetic field; wherein the magnetic field directions of the X-axis magnetic field and the Y-axis magnetic field are perpendicular to each other and parallel to the substrate plane, and the magnetic field direction of the Z-axis magnetic field is perpendicular to the substrate plane; Wherein, the multiple first magnetic stacks include magnetic stack one, magnetic stack two, magnetic stack three, and magnetic stack four; the magnetic resistance formed by the series coupling of the magnetic stack one and the magnetic stack two and the magnetic resistance formed by the series coupling of the magnetic stack three and the magnetic stack four have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the Y-axis magnetic field; the magnetic resistance formed by the series coupling of the magnetic stack one and the magnetic stack four and the magnetic resistance formed by the series coupling of the magnetic stack three and the magnetic stack two have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the X-axis magnetic field; The plurality of second magnetic stacks include magnetic stack five, magnetic stack six, magnetic stack seven, and magnetic stack eight; the magnetic resistance formed by the series coupling of the magnetic stack five and the magnetic stack six and the magnetic resistance formed by the series coupling of the magnetic stack seven and the magnetic stack eight have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the Y-axis magnetic field; the magnetic resistance formed by the series coupling of the magnetic stack five and the magnetic stack eight and the magnetic resistance formed by the magnetic stack seven and the magnetic stack six have sensitive axes that are opposite to each other and parallel to the magnetic field direction of the X-axis magnetic field; The first magnetic flux concentrator is in a ring shape; the first magnetic stacks are at the same distance from the edge of the first magnetic flux concentrator, so that they are sensitive to the Z-axis magnetic field and have the same first response; The second magnetic flux concentrator is in a ring shape; each of the second magnetic stacks is at the same distance from the edge of the second magnetic flux concentrator, so that it is sensitive to the Z-axis magnetic field and has the same second response; the second response is opposite to the first response.

2. The magnetoresistive element according to claim 1, wherein: The sensitive axis of each of the first magnetic stacks extends from the first magnetic stack toward the center of the first magnetic flux concentrator, and forms a first angle or other angle with the magnetic field direction of the X-axis magnetic field; The first angle is an acute angle; The sensitive axis of each of the second magnetic stacks extends from the center of the first magnetic flux concentrator toward the first magnetic stack, and forms the first angle or other angles with the magnetic field direction of the X-axis magnetic field.

3. The magnetoresistive element according to claim 2, characterized in that The magnetic stack one, the magnetic stack two, the magnetic stack three, and the magnetic stack four in each of the first magnetic stacks are arranged clockwise; wherein the symmetric axes of the sensitive axes of the magnetic stack one and the magnetic stack two and the symmetric axes of the sensitive axes of the magnetic stack three and the magnetic stack four are both parallel to the magnetic field direction of the Y-axis magnetic field; the symmetric axes of the sensitive axes of the magnetic stack three and the magnetic stack two and the symmetric axes of the sensitive axes of the magnetic stack one and the magnetic stack four are both parallel to the magnetic field direction of the X-axis magnetic field; The magnetic stack five, the magnetic stack six, the magnetic stack seven, and the magnetic stack eight in each of the second magnetic stacks are arranged clockwise; wherein the sensitive axis symmetry axes of the magnetic stack five and the magnetic stack six and the sensitive axis symmetry axes of the magnetic stack seven and the magnetic stack eight are parallel to the magnetic field direction of the Y-axis magnetic field; the sensitive axis symmetry axes of the magnetic stack six and the magnetic stack seven and the sensitive axis symmetry axes of the magnetic stack five and the magnetic stack eight are parallel to the magnetic field direction of the X-axis magnetic field; The sensitive axis direction of the magnetic stack one is parallel to the sensitive axis direction of the magnetic stack seven, and the angle between the sensitive axis direction and the magnetic field direction of the X-axis magnetic field is an acute angle.

4. The magnetoresistive element according to claim 3, characterized in that The magnetoresistive element further comprises a plurality of switch units; Each of the switch units is located above the substrate, and is electrically coupled to each of the first magnetic stacks and each of the second magnetic stacks to form different Wheatstone bridges, so that the magnetoresistive element is sensitive to the X-axis magnetic field when forming the first Wheatstone bridge, is sensitive to the Y-axis magnetic field when forming the second Wheatstone bridge, and is sensitive to the Z-axis magnetic field when forming the third Wheatstone bridge; The Wheatstone bridge comprises a first bridge arm, a second bridge arm, a third bridge arm and a fourth bridge arm coupled to each other; When forming the first Wheatstone bridge, the magnetic stack 2 is coupled in series with the magnetic stack 3 to form the first bridge arm, the magnetic stack 1 is coupled in series with the magnetic stack 4 to form the second bridge arm, the magnetic stack 5 is coupled in series with the magnetic stack 8 to form the third bridge arm, and the magnetic stack 6 is coupled in series with the magnetic stack 7 to form the fourth bridge arm; When forming the second Wheatstone bridge, the magnetic stack one and the magnetic stack two are coupled in series to form the first bridge arm, the magnetic stack four and the magnetic stack three are coupled in series to form the second bridge arm, the magnetic stack eight and the magnetic stack seven are coupled in series to form the third bridge arm, and the magnetic stack five and the magnetic stack six are coupled in series to form the fourth bridge arm; When forming the third Wheatstone bridge, the magnetic stack one in each of the first magnetic stacks is coupled in series with the magnetic stack two, the magnetic stack three, or the magnetic stack four to form the first bridge arm, and the remaining first magnetic stacks are coupled in series to form the third bridge arm; the magnetic stack five in each of the second magnetic stacks is coupled in series with the magnetic stack six, the magnetic stack seven, or the magnetic stack eight to form the second bridge arm, and the remaining second magnetic stacks are coupled in series to form the fourth bridge arm.

5. The magnetoresistive element according to claim 4, characterized in that The switch unit is a MOS switch.

6. The magnetoresistive element according to claim 1, wherein: The first magnetic stack and the second magnetic stack are one of AMR, TMR or GMR; the first magnetic flux concentrator and the second magnetic flux concentrator are made of soft magnetic material.

7. A method for manufacturing a magnetoresistive element, characterized in that: The magnetoresistive element is a magnetoresistive element according to any one of claims 1 to 6; The manufacturing method comprises: A multilayer film is formed on a substrate, and a plurality of magnetic stacks are obtained by tape-out; A second magnetic flux concentrator and a third magnetic flux concentrator of a symmetrical closed area are formed on the substrate, wherein the second magnetic stack in each of the magnetic stacks is adjacent to the outer side of the second magnetic flux concentrator, and the first magnetic stack in each of the magnetic stacks is adjacent to the inner side of the third magnetic flux concentrator; Performing high temperature magnetic field annealing so that the sensitive axis of each of the first magnetic stacks faces the inner side of the third magnetic flux concentrator, and the sensitive axis of each of the second magnetic stacks faces the outer side of the second magnetic flux concentrator; The third magnetic flux concentrator is removed, and a first magnetic flux concentrator concentric with the third magnetic flux concentrator is formed on the inner side of each of the first magnetic stacks to obtain the magnetic resistance element.

8. A magnetoresistive sensor, characterized in that: It comprises a magnetoresistive element, wherein the magnetoresistive element is the magnetoresistive element described in any one of claims 1 to 6, or the magnetoresistive element is manufactured by the manufacturing method described in claim 7.

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