Wafer reaction device
By integrating the intake pipe and tilting the air outlet in the wafer reaction device, the problem of difficulty in controlling the reaction space is solved, and the uniformity of the gas distribution on the wafer surface and the coating quality are improved.
Patent Information
- Application Number
- CN202410336746.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-22
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2044-03-22
AI Technical Summary
Existing wafer reaction devices are difficult to effectively control the reaction space, resulting in uneven gas distribution on the wafer surface and affecting the coating quality.
A wafer reaction device is designed, by integrating the first intake pipe and a plurality of second intake pipes and tilting it on the inner wall of the reaction chamber, the air outlet end of the air outlet member and the air intake end of the reaction chamber are arranged accordingly, so that the reaction is made. The gas diffuses evenly along the inner wall of the reaction chamber to the wafer.
The uniform diffusion of the reaction gas in a small space is achieved, uneven gas spraying is avoided, and the uniformity of gas distribution and coating quality on the wafer surface are improved.
Smart Images
Figure CN118345505B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor production and manufacturing technology, and in particular to a wafer reaction device. Background Art
[0002] Atomic layer deposition is usually a method of coating a material on a substrate surface layer by layer in the form of a single atomic film. A wafer reaction device is a device that uses atomic layer deposition to coat a wafer.
[0003] In the related art, a wafer reaction device usually includes a reaction chamber, in which a reaction chamber is arranged. A wafer is usually placed in the reaction chamber. A first air inlet channel connected to the reaction chamber is arranged above the wafer, and the first air inlet channel is used to introduce a carrier gas and a first reaction gas into the reaction chamber. A plurality of second air inlet channels connected to the reaction chamber are arranged around the side wall of the reaction chamber, and the plurality of second air inlet channels are arranged above the wafer. The plurality of second air inlet channels are used to introduce a carrier gas and a plurality of second reaction gases into the reaction chamber. A gas outlet channel connected to the reaction chamber is arranged below the wafer, and the carrier gas and the first reaction gas as well as the carrier gas and the plurality of second reaction gases enter the reaction chamber through the first air inlet channel and the plurality of second air inlet channels in turn, diffuse to the bottom of the wafer and the surface of the wafer to react, and then flow out through the gas outlet channel.
[0004] However, it is difficult for the wafer reaction device in the prior art to effectively control the reaction space, and it is easy to cause uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, affecting the coating quality of the wafer. Summary of the invention
[0005] The embodiment of the present application provides a wafer reaction device to solve the technical problems that the wafer reaction device in the prior art is difficult to effectively control the reaction space and easily causes uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, affecting the coating quality of the wafer.
[0006] The embodiment of the present application provides a wafer reaction device, comprising:
[0007] A reaction mechanism, wherein the reaction mechanism is formed with a reaction chamber, at least a portion of the inner wall of the reaction chamber is inclined, and a wafer placement position for carrying a wafer is provided in the reaction chamber;
[0008] A pipeline integrated mechanism, the pipeline integrated mechanism includes a first air inlet pipe, multiple second air inlet pipes and an air outlet piece, the first air inlet pipe and the multiple second air inlet pipes are used to respectively transport different reaction gases into the reaction chamber, the air outlet end of the first air inlet pipe and the air outlet ends of the multiple second air inlet pipes are both connected to the air inlet end of the air outlet piece, the air outlet end of the air outlet piece and the air inlet end of the reaction chamber are arranged correspondingly, and the air outlet end of the air outlet piece is provided with multiple air outlet holes to allow the reaction gas to diffuse along the inner wall of the reaction chamber to the wafer placement position.
[0009] In a feasible implementation, the pipeline integration mechanism further includes a communication component;
[0010] The connecting component is arranged as an annular structure, the outlet ends of the plurality of second air inlet pipes are connected with the air outlet member via the connecting component, and the connecting component is arranged around the first air inlet pipe.
[0011] In a feasible implementation, the communication component includes a storage component and a communication component;
[0012] The storage element is arranged in an annular structure, the outlet ends of the plurality of second air inlet pipes are connected to the air inlet end of the storage element, the outlet end of the storage element is connected to the air inlet ends of the plurality of connecting elements, and the outlet ends of the plurality of connecting elements are connected to the air inlet end of the air outlet element;
[0013] Wherein, the radial dimension of the storage element is larger than the inner diameter of the air outlet end of the second air inlet pipe, and the inner diameter of the connecting element is smaller than the inner diameter of the air outlet end of the second air inlet pipe.
[0014] In a feasible implementation, the first air intake pipe includes a first air intake section, a second air intake section and a third air intake section which are connected in sequence;
[0015] The inner diameter of the second air intake section is larger than that of the first air intake section, the inner diameter of the third air intake section is larger than that of the second air intake section, and at least part of the third air intake section is inclined.
[0016] In a feasible implementation, the first air intake pipe further includes an inclined section;
[0017] The first end of the inclined section is connected to the first air inlet section, the second end of the inclined section is connected to the second air inlet section, and the inner diameter of the inclined section gradually increases from the first end to the second end;
[0018] The third air inlet section includes a first uniform area, a connecting area, and a second uniform area which are connected in sequence. The air inlet end of the first uniform area is connected to the air outlet end of the second air inlet section. The inner diameter of the first uniform area gradually increases from the air outlet end of the second air inlet section to the connecting area.
[0019] The two ends of the connection zone are respectively connected to the first uniform zone and the second uniform zone, and the inner diameter of the second uniform zone gradually increases from the gas outlet end of the connection zone to the gas outlet end of the second uniform zone.
[0020] In a feasible implementation, the pipeline integration mechanism further includes a purge intake pipe, an intake branch pipe and an intake passage;
[0021] The purge air intake pipe is connected to one end of the air intake channel, the air intake channel is arranged in an annular structure, and the other end of the air intake channel is connected to one end of a plurality of air intake branch pipes, and the other end of the plurality of air intake branch pipes is connected to the plurality of second air intake pipes correspondingly;
[0022] The pipeline integration mechanism also includes a purge exhaust pipe, an exhaust branch pipe and an exhaust channel;
[0023] The purge exhaust pipe is connected to one end of the exhaust channel, the exhaust channel is arranged in an annular structure, and the other end of the exhaust channel is connected to one end of a plurality of exhaust branch pipes, and the other end of the plurality of exhaust branch pipes is connected to the plurality of second intake pipes correspondingly;
[0024] The purge inlet pipe is used for blowing in purge gas, and the purge exhaust pipe is used for exhausting purge gas and impurity gas.
[0025] In a feasible implementation, the pipeline integration mechanism further includes a first injection member and a second injection member;
[0026] A plurality of first injection members are detachably disposed in the intake branch pipe, and the inner diameter of the first injection member is smaller than the inner diameter of the intake branch pipe;
[0027] A plurality of second injection members are detachably arranged in the exhaust branch pipe, and the inner diameter of the second injection member is smaller than the inner diameter of the exhaust branch pipe.
[0028] In a feasible implementation, the inner diameter of the reaction chamber gradually increases from the air inlet end toward the wafer placement position.
[0029] In a feasible implementation, the direction from the air inlet end to the wafer placement position of the reaction chamber includes at least a first diffusion zone, a buffer zone, a second diffusion zone and a placement zone;
[0030] The inner diameter of the first diffusion zone gradually increases from the air inlet end to the buffer zone;
[0031] The buffer zone extends along an end of the first diffusion zone facing away from the air inlet end toward the second diffusion zone;
[0032] The inner diameter of the second diffusion zone gradually increases from the end of the buffer zone facing away from the first diffusion zone toward the placement zone;
[0033] The placement area extends along one end of the second diffusion area facing away from the buffer zone toward the wafer placement position; the wafer placement position is arranged at the bottom of the placement area.
[0034] In a feasible implementation, the reaction mechanism includes a reaction outer shell and a reaction inner shell, the reaction outer shell forms a receiving cavity, and the reaction inner shell is arranged in the receiving cavity;
[0035] The reaction inner shell includes a first shell and a second shell, one end of the first shell is connected to the pipeline integration mechanism, and the other end of the first shell extends in the direction of the wafer placement position;
[0036] A first diffusion zone is formed in the first shell; a buffer zone, a second diffusion zone and a placement zone are formed in the second shell;
[0037] The side wall of the reaction mechanism is also provided with a wafer conveying channel connected with the accommodating cavity, and the second shell can reciprocate along the vertical direction so that the wafer is placed into the wafer placement position of the placement area through the wafer conveying channel.
[0038] In a feasible implementation, the wafer reaction device further includes a lifting mechanism, which includes a movable frame, a driving member, a movable rod and a guide sealing member;
[0039] The fixed end of the driving member is arranged on the reaction housing, and the lifting end of the driving member is arranged on the movable frame;
[0040] One end of the guide seal is fixed to the movable frame, the other end of the guide seal is fixed to the reaction shell, one end of the movable rod is connected to the movable frame, and the other end of the movable rod passes through the guide seal, the accommodating cavity and is connected to the second shell in sequence;
[0041] The lifting end is configured to drive the movable frame to move in the vertical direction, so that the movable rod drives the second shell to move up and down in the vertical direction.
[0042] In a feasible implementation, an annular first protrusion is provided around the outer side wall of the second shell;
[0043] The lifting mechanism also includes an adjustment assembly, which includes an adjustment rod, a first adjustment knob, a first locking nut, a first gasket, a second adjustment knob, a second locking nut, and a second gasket;
[0044] One end of the adjusting rod is rotatably connected to the other end of the movable rod, and the other end of the adjusting rod passes through the first protrusion;
[0045] One end of the first adjusting knob abuts against one side of the first protrusion through a first gasket, and the other end of the first adjusting knob abuts against the first locking nut, and the first locking nut, the first adjusting knob and the first gasket are sequentially sleeved on the outer side wall of the adjusting rod;
[0046] One end of the second adjusting knob abuts against the other side of the first protrusion through the second gasket, and the other end of the second adjusting knob abuts against the second locking nut, and the second gasket, the second adjusting knob and the second locking nut are sequentially sleeved on the outer side wall of the adjusting rod.
[0047] In a feasible implementation, the wafer reaction device further includes a ceramic shunt;
[0048] The ceramic diverter is arranged on the top of the first shell, the outlet end of the ceramic diverter is arranged in a columnar structure, the outlet end is provided with a plurality of air diffusion holes, and the air diffusion holes are connected with the accommodating cavity;
[0049] The ceramic diverter is used to transport inert gas into the containing chamber so that the pressure in the containing chamber is greater than the pressure in the reaction chamber.
[0050] In a feasible implementation, the reaction inner shell further includes a third shell, which extends from the bottom of the wafer placement position toward the second shell and is sleeved on the outer side wall of the second shell.
[0051] The wafer reaction device also includes a first heating mechanism and a second heating mechanism;
[0052] The first heating mechanism is arranged between the third shell and the reaction shell, and the second heating mechanism is arranged below the wafer placement position; the first heating mechanism and the second heating mechanism are both used for heating the wafer.
[0053] In a feasible implementation, the second heating mechanism includes a carrier, a heating wire and a heat conducting plate;
[0054] The carrier is arranged below the wafer placement position, the heat conducting plate is arranged between the carrier and the wafer placement position, and the carrier and the heat conducting plate are integrally formed, the heating wire is arranged between the carrier and the heat conducting plate, and the carrier is connected to the bottom of the third shell through a plurality of annular connecting columns;
[0055] The heat conducting plate comprises an inner circle and an annular region arranged outside the inner circle. The inner circle and the heating wire are arranged correspondingly, and a plurality of air vents are arranged in the annular region.
[0056] An embodiment of the present application provides a wafer reaction device. In the embodiment of the present application, a first air inlet pipe and a plurality of second air inlet pipes are integrated and connected to an air outlet piece. On the one hand, the air outlet ends of the first air inlet pipe and the plurality of second air inlet pipes can be concentrated, so that the reaction space can be effectively controlled; on the other hand, when the reaction gas is introduced into the reaction chamber, first, the carrier gas and the first reaction gas are allowed to enter the air outlet piece through the first air inlet pipe and be concentrated, and then be evenly discharged from the exhaust holes of the air outlet piece; then, the carrier gas and different second reaction gases are allowed to enter the air outlet piece through the plurality of second air inlet pipes in turn and be concentrated, and then be evenly discharged from the exhaust pipes of the air outlet piece, thereby achieving the effect of evenly diffusing the gas; therefore, the embodiment of the present application can achieve even diffusion of the reaction gas in a smaller reaction space by integrating the first air inlet pipe and the plurality of second air inlet pipes. Furthermore, in the present application, by setting the inner wall of the reaction chamber at an angle, and making the outlet end of the gas outlet piece and the inlet end of the reaction chamber corresponding, the reaction gas in the gas outlet piece can be diffused to the wafer on the wafer placement position through the inclined inner wall of the reaction chamber, avoiding uneven spraying of the reaction gas, thereby making the gas distribution on the surface of the wafer uniform and improving the coating quality of the wafer. Through the setting of the embodiment of the present application, a wafer reaction device is provided that can make the gas distribution on the surface of the wafer uniform and improve the coating quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0057] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present application and do not constitute an improper limitation of the present invention. In the drawings:
[0058] Figure 1 is a structural cross-sectional view of a wafer reaction device provided by an embodiment of the present application;
[0059] Figure 2 yes Figure 1 Structural schematic diagram of the central pipeline integration mechanism;
[0060] Figure 3 yes Figure 2 A cross-sectional view of
[0061] Figure 4 yes Figure 1 A partial structural cross-sectional view of FIG.
[0062] Figure 5 yes Figure 1 Structural cross-sectional view in ;
[0063] Figure 6 yes Figure 1 Partial structure diagram of Figure 1 ;
[0064] Figure 7 yes Figure 1 Partial structure diagram of Figure 2 ;
[0065] Figure 8 yes Figure 1 Partial structure diagram of Figure 3 ;
[0066] Fig. 9 yes Figure 1 A top view of the
[0067] Fig.10 yes Figure 1 Partial structure diagram of Figure 4 ;
[0068] Fig.11 yes Figure 1 A schematic diagram of the structure in which the ceramic shunt is assembled on the outer shell;
[0069] Fig.12 yes Figure 4 Schematic diagram of the structure of the heat transfer plate.
[0070] Description of reference numerals:
[0071] 100-reaction mechanism; 200-pipeline integration mechanism; 300-lifting mechanism; 400-support mechanism; 500-ceramic diverter; 600-first heating mechanism; 700-second heating mechanism;
[0072] 110-reaction outer shell; 111-accommodation chamber; 120-reaction inner shell; 121-first shell; 1211-first diffusion zone; 122-second shell; 1221-buffer zone; 1222-second diffusion zone; 1223-placement zone; 122a-wafer placement position; 122b-first protrusion; 122c-second protrusion; 123-third shell;
[0073] 210-first air inlet pipe; 211-first air inlet section; 212-second air inlet section; 213-third air inlet section; 213a-first uniform area; 213b-connecting area; 213c-second uniform area; 214-inclined section;
[0074] 220-second air inlet pipe; 230-air outlet member; 240-connecting assembly; 241-storage member; 242-connecting member; 250-purge air inlet pipe; 251-inlet branch pipe; 251a-inlet branch pipe; 252-inlet passage; 260-purge exhaust pipe; 261-exhaust branch pipe; 261a-exhaust branch pipe; 262-exhaust passage; 201-first component; 202-second component; 203-third component; 204-fourth component;
[0075] 310-movable frame; 320-driving member; 330-movable rod; 340-guide seal; 341-sealing bellows; 342-straight tube; 350-adjusting assembly; 351-adjusting rod; 352-first adjusting knob; 353-first locking nut; 354-first gasket; 355-second adjusting knob; 356-second locking nut; 357-second gasket;
[0076] 410-sleeve; 420-extended sliding rod;
[0077] 710 - carrier; 720 - heating wire; 730 - heat conducting plate; 731 - air vent. DETAILED DESCRIPTION
[0078] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work should fall within the scope of protection of the present application.
[0079] It should be noted that many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.
[0080] Atomic layer deposition is usually a method of coating a material on a substrate surface layer by layer in the form of a single atomic film. A wafer reaction device is a device that uses atomic layer deposition to coat a wafer.
[0081] In the related art, a wafer reaction device usually includes a reaction chamber, in which a reaction chamber is arranged. A wafer is usually placed in the reaction chamber. A first air inlet channel connected to the reaction chamber is arranged above the wafer, and the first air inlet channel is used to introduce a carrier gas and a first reaction gas into the reaction chamber. A plurality of second air inlet channels connected to the reaction chamber are arranged around the side wall of the reaction chamber, and the plurality of second air inlet channels are arranged above the wafer. The plurality of second air inlet channels are used to introduce a carrier gas and a plurality of second reaction gases into the reaction chamber. A gas outlet channel connected to the reaction chamber is arranged below the wafer, and the carrier gas and the first reaction gas as well as the carrier gas and the plurality of second reaction gases enter the reaction chamber through the first air inlet channel and the plurality of second air inlet channels in turn, diffuse to the bottom of the wafer and the surface of the wafer to react, and then flow out through the gas outlet channel.
[0082] However, it is difficult for the wafer reaction device in the prior art to effectively control the reaction space, and it is easy to cause uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, affecting the coating quality of the wafer.
[0083] Therefore, an embodiment of the present application provides a wafer reaction device to solve the technical problem that the wafer reaction device in the prior art is difficult to effectively control the reaction space and easily causes uneven gas distribution on the wafer surface, resulting in uneven deposition layer on the wafer surface, affecting the coating quality of the wafer.
[0084] Figure 1 It is a structural cross-sectional view of a wafer reaction device provided in one embodiment of the present application.
[0085] Reference Figure 1 , the embodiment of the present application provides a wafer reaction device, comprising:
[0086] The reaction mechanism 100 is formed with a reaction chamber, at least part of the inner wall of the reaction chamber is inclined, and a wafer placement position 122a for carrying a wafer is provided in the reaction chamber;
[0087] The pipeline integrated mechanism 200 includes a first air inlet pipe 210, multiple second air inlet pipes 220 and an air outlet piece 230. The first air inlet pipe 210 and the multiple second air inlet pipes 220 are used to transport different reaction gases into the reaction chamber respectively. The air outlet end of the first air inlet pipe 210 and the air outlet ends of the multiple second air inlet pipes 220 are both connected to the air inlet end of the air outlet piece 230. The air outlet end of the air outlet piece 230 and the air inlet end of the reaction chamber are correspondingly arranged. The air outlet end of the air outlet piece 230 is provided with multiple air outlet holes so that the reaction gas can diffuse along the inner wall of the reaction chamber to the wafer placement position 122a.
[0088] Illustratively, the first air inlet pipe 210 is used to introduce carrier gas (nitrogen can be used as carrier gas) and precursor A, and multiple second air inlet pipes 220 are used to respectively introduce carrier gas (nitrogen can be used as carrier gas) and precursor B1, carrier gas and precursor B2, carrier gas and precursor B3, etc., which are not listed one by one here.
[0089] In a specific implementation, the first air inlet pipe 210 and the plurality of second air inlet pipes 220 are sequentially fed with corresponding reaction gases.
[0090] Exemplarily, a microwave plasma is further arranged between the outlet ends of the first air inlet pipe 210 and the plurality of second air inlet pipes 220 and the air outlet member 230 , wherein the microwave plasma is used to perform microwave plasma treatment on the reaction gas introduced into the first air inlet pipe 210 and the second air inlet pipe 220 .
[0091] Exemplarily, the pipeline integrated mechanism 200 includes a first component 201, a second component 202, a third component 203 and a fourth component 204 stacked in sequence, wherein the first component 201, the second component 202, the third component 203 and the fourth component 204 can be formed as one piece, or the first component 201, the second component 202, the third component 203 and the fourth component 204 can be formed separately and then connected with bolts.
[0092] In a specific implementation, the first air intake pipe 210 may include a first pipe and a first channel, wherein the first channel is an air intake channel 252 extending along the first component 201, the second component 202, the third component 203 and the fourth component 204, the first pipe is connected to the first channel, and an external first air intake device passes the reaction gas into the first channel via the first pipe. Similarly, the second air intake pipe 220 may include a second pipe and a second channel, wherein the second channel is an air intake channel 252 extending along the first component 201, the second component 202, the third component 203 and the fourth component 204, the second pipe is connected to the second channel, and an external second air intake device passes the reaction gas into the second channel via the second pipe.
[0093] From the above description, it can be seen that this solution achieves the following technical effects:
[0094] The embodiment of the present application provides a wafer reaction device. In the embodiment of the present application, a first air inlet pipe 210 and a plurality of second air inlet pipes 220 are integrated and connected to an air outlet piece 230. On the one hand, the air outlet ends of the first air inlet pipe 210 and the plurality of second air inlet pipes 220 can be concentrated, so that the reaction space can be effectively controlled. On the other hand, when the reaction gas is introduced into the reaction chamber, first, the carrier gas and the first reaction gas are introduced into the air outlet piece 230 through the first air inlet pipe 210 and concentrated, and then uniformly discharged from the exhaust holes of the air outlet piece 230. Then, the carrier gas and different second reaction gases are introduced into the air outlet piece 230 through the plurality of second air inlet pipes 220 in turn and concentrated, and then uniformly discharged from the exhaust pipe of the air outlet piece 230, so as to achieve the effect of uniformly diffusing the gas. Therefore, the embodiment of the present application can achieve uniform diffusion of the reaction gas in a smaller reaction space by integrating the first air inlet pipe 210 and the plurality of second air inlet pipes 220. Furthermore, in the present application, by setting the inner wall of the reaction chamber at an angle, and making the outlet end of the gas outlet member 230 and the inlet end of the reaction chamber corresponding, the reaction gas in the gas outlet member 230 can be diffused to the wafer on the wafer placement position 122a through the inclined inner wall of the reaction chamber, avoiding uneven spraying of the reaction gas, thereby making the gas distribution on the surface of the wafer uniform and improving the coating quality of the wafer. Through the setting of the embodiment of the present application, a wafer reaction device is provided that can make the gas distribution on the surface of the wafer uniform and improve the coating quality of the wafer.
[0095] Figure 2 yes Figure 1 Structural schematic diagram of the central pipeline integration mechanism; Figure 3 yes Figure 2 sectional view of .
[0096] Reference Figures 2 to 3 In some examples, the pipeline integrated mechanism 200 further includes a communication component 240;
[0097] The connecting component 240 is configured as an annular structure. The outlet ends of the plurality of second air inlet pipes 220 are connected to the air outlet member 230 via the connecting component 240 . The connecting component 240 is configured to surround the first air inlet pipe 210 .
[0098] Exemplarily, the connecting component 240 may be an annular channel disposed on the third component 203 and the fourth component 204 , and the annular channel is connected to the outlet ends of the plurality of second air inlet pipes 220 , that is, connected to the outlet ends of the second channels.
[0099] Exemplarily, the plurality of second intake pipes 220 are disposed around the first intake pipe 210 .
[0100] Through the setting of the connecting component 240, the embodiment of the present application can concentrate and diffuse the reaction gas through the connecting component 240 when the reaction gas is introduced into the second air inlet pipe 220, so as to avoid the reaction gas diffusing only from the outlet end of the second air inlet pipe 220 toward the reaction chamber, thereby improving the uniformity of gas diffusion, so as to make the wafer surface evenly deposited, thereby improving the coating quality of the wafer.
[0101] In some examples, the communication component 240 includes a storage component 241 and a communication component 242;
[0102] The storage element 241 is provided in an annular structure, the outlet ends of the plurality of second air inlet pipes 220 are connected to the air inlet end of the storage element 241, the outlet end of the storage element 241 is connected to the air inlet ends of the plurality of connecting elements 242, and the outlet ends of the plurality of connecting elements 242 are connected to the air inlet end of the air outlet element 230;
[0103] The radial dimension of the storage element 241 is larger than the inner diameter of the outlet end of the second air inlet pipe 220 , and the inner diameter of the connecting element 242 is smaller than the inner diameter of the outlet end of the second air inlet pipe 220 .
[0104] Exemplarily, the storage element 241 may be an annular channel disposed on the third component 203 , and the connecting element 242 may be a plurality of connecting channels disposed on the fourth component 204 and connected to the storage element 241 .
[0105] The embodiment of the present application is provided with a storage element 241. When the reaction gas is introduced into the second air inlet pipe 220, the reaction gas can be stored in the wafer storage element 241 and diffused around the annular structure to avoid the reaction gas diffusing only from the outlet end of the second air inlet pipe 220 toward the reaction chamber. Furthermore, the embodiment of the present application is provided with a connecting element 242, and the radial dimension of the storage element 241 is set to be larger than the inner diameter of the outlet end of the second air inlet pipe 220, and the inner diameter of the connecting element 242 is set to be smaller than the inner diameter of the outlet end of the second air inlet pipe 220, so that the speed at which the reaction gas enters the storage element 241 is greater than the speed at which the reaction gas enters the connecting element 242, so that the reaction gas can be uniformly output from the connecting element 242 to the outlet element 230, so as to improve the uniformity of the gas in the reaction chamber.
[0106] In some examples, the first air intake pipe 210 includes a first air intake section 211, a second air intake section 212, and a third air intake section 213 that are connected in sequence;
[0107] The inner diameter of the second air inlet section 212 is greater than that of the first air inlet section 211 , the inner diameter of the third air inlet section 213 is greater than that of the second air inlet section 212 , and at least part of the third air inlet section 213 is inclined.
[0108] In the embodiment of the present application, by configuring the first air inlet pipe 210 to include a first air inlet section 211, a second air inlet section 212 and a third air inlet section 213 which are connected in sequence, configuring the inner diameter of the second air inlet section 212 to be larger than the inner diameter of the first air inlet section 211, configuring the inner diameter of the third air inlet section 213 to be larger than the inner diameter of the second air inlet section 212, and configuring at least a portion of the third air inlet section 213 to be inclined, the first reaction gas in the first air inlet pipe 210 can be uniformly diffused in the first air inlet pipe 210 through the first air inlet section 211 and the second air inlet section 212 in sequence, and then uniformly diffused into the air outlet piece through the inclined inner wall of the third air inlet section 213, thereby achieving the effect of uniformly diffusing the first reaction gas.
[0109] Exemplarily, the first air intake pipe 210 further includes an inclined section 214;
[0110] The first end of the inclined section 214 is connected to the first air inlet section 211, and the second end of the inclined section 214 is connected to the second air inlet section 212. The inner diameter of the inclined section 214 gradually increases from the first end to the second end.
[0111] The third air inlet section 213 includes a first uniform area 213a, a connecting area 213b and a second uniform area 213c which are connected in sequence. The air inlet end of the first uniform area 213a is connected to the air outlet end of the second air inlet section 212. The inner diameter of the first uniform area 213a gradually increases from the air outlet end of the second air inlet section 212 to the connecting area 213c.
[0112] The two ends of the connection area 213b are respectively connected to the first uniform area 213a and the second uniform area 213b, and the inner diameter of the second uniform area 213b gradually increases from the gas outlet end of the connection area 213c to the gas outlet end of the second uniform area 213c.
[0113] In the embodiment of the present application, the inclined section 214 is provided, on the one hand, to connect the first air inlet section 211 and the second air inlet section 212, and on the other hand, the inner diameter of the inclined section 214 is set to gradually expand from the first end to the second end, so that the first reaction gas can be uniformly diffused along the inner wall of the inclined section in the inclined section 214. In the embodiment of the present application, by providing the third air inlet section 213 to include a first uniform area 213a, a connecting area 213b, and a second uniform area 213c that are connected in sequence, the first reaction gas can be uniformly diffused to the gas outlet member 230 through the first uniform area 213a and the second uniform area 213c.
[0114] In some other implementations, the pipeline integration mechanism 200 further includes a purge air intake pipe 250 , an air intake branch pipe 251 , and an air intake passage 252 ;
[0115] The purge air intake pipe 250 is connected to one end of the air intake channel 252, the air intake channel 252 is set to a ring structure, and the other end of the air intake channel 252 is connected to one end of the plurality of air intake branch pipes 251, and the other end of the plurality of air intake branch pipes 251 is connected to the plurality of second air intake pipes 220 correspondingly;
[0116] The pipeline integration mechanism 200 further includes a purge exhaust pipe 260, an exhaust branch pipe 261 and an exhaust channel 262;
[0117] The purge exhaust pipe 260 is connected to one end of the exhaust channel 262, the exhaust channel 262 is arranged in an annular structure, and the other end of the exhaust channel 262 is connected to one end of a plurality of exhaust branch pipes 261, and the other end of the plurality of exhaust branch pipes 261 is connected to the plurality of second intake pipes 220 correspondingly;
[0118] The purge inlet pipe 250 is used to blow in the purge gas, and the purge exhaust pipe 260 is used to exhaust the purge gas and impurity gas.
[0119] Exemplarily, the purge air intake pipe 250 may be disposed on the second component 202 , the air intake passage 252 may also be disposed on the second component 202 , and the air intake branch pipe 251 may be disposed on the third component 203 .
[0120] Exemplarily, the purge exhaust pipe 260 may be disposed on the first component 201 , the exhaust passage 262 may also be disposed on the first component 201 , and the exhaust branch pipe 261 may be disposed on the second component 202 .
[0121] Exemplarily, the purge gas may be set to an inert gas, such as nitrogen.
[0122] The embodiment of the present application can purge the second air inlet pipe 220 by purging the air inlet pipe 250, the air inlet branch pipe 251, the air inlet channel 252 and the air exhaust pipe 260, the exhaust branch pipe 261, and the exhaust channel 262, thereby effectively purging residual reaction gases (such as precursor A, precursor B1, precursor B2, etc.) and purging nitrogen to ensure the purity of atoms deposited on the wafer each time.
[0123] Exemplarily, the pipeline integration mechanism 200 further includes a first injection member 251a and a second injection member 261a;
[0124] A plurality of first injection members 251a are detachably disposed in the intake branch pipe 251, and an inner diameter of the first injection member 251a is smaller than an inner diameter of the intake branch pipe 251;
[0125] A plurality of second injection members 261 a are detachably disposed in the exhaust branch pipe 261 , and an inner diameter of the second injection member 261 a is smaller than an inner diameter of the exhaust branch pipe 261 .
[0126] In a specific implementation, both the first injection member 251a and the second injection member 261a can be set as capillaries. When air intake is required to purge the second intake pipe 220, the purge exhaust pipe 260 is closed, and purge nitrogen is input into the intake end of the purge intake pipe 250. The purge nitrogen enters into the multiple second intake pipes 220 via the intake channel 252 and the intake branch pipe 251. Since a capillary is provided at the intake branch pipe 251, the pressure of the purge nitrogen entering the intake branch pipe 251 from the intake channel 252 becomes larger, thereby increasing the purge force of the purge nitrogen on the second intake pipe 220. Furthermore, the embodiment of the present application sets the inner diameter of the capillary to be smaller than the inner diameter of the intake branch pipe 251, thereby preventing the reaction gas from entering the purge intake pipe 250 and other pipes connected to the purge intake pipe 250 through the intake channel 252 and causing contamination when the reaction gas is introduced into the second intake pipe 220, thereby protecting the intake channel 252, the purge intake pipe 250 and other pipes connected to the purge intake pipe 250.
[0127] Close the purge air inlet pipe 250, and purge the exhaust pipe 260 to discharge the purge gas and impurity gas in the second air inlet pipe 220. The purge nitrogen and impurity gas in the second air inlet pipe 220 enter the purge exhaust pipe 260 via the exhaust branch pipe 261 and the exhaust channel 262 in turn. Since the exhaust branch pipe 261 is provided with a capillary, and the inner diameter of the capillary is set to be smaller than the inner diameter of the exhaust branch pipe 261, it is possible to avoid that when the reaction gas is introduced into the second air inlet pipe 220, the reaction gas enters the purge exhaust pipe 260 and other pipes connected to the purge exhaust pipe 260 via the exhaust channel 262 and causes pollution, thereby protecting the exhaust channel 262, the purge exhaust pipe 260 and other pipes connected to the purge exhaust pipe 260.
[0128] The embodiment of the present application can improve the purge force of the purge nitrogen gas on the second air intake pipe 220 by disposing the first injection member 251a, and can avoid pollution of the air intake channel 252, the purge air intake pipe 250, and other pipes connected to the purge air intake pipe 250. Further, the embodiment of the present application can protect the exhaust channel 262, the purge exhaust pipe 260, and other pipes connected to the purge exhaust pipe 260 by disposing the second injection member 261a.
[0129] Figure 4 yes Figure 1 A partial structural cross-sectional view of FIG. Figure 5 yes Figure 1 Structural cross-section view in .
[0130] Reference Figure 1 , Figure 4 and Figure 5In another implementation, the inner diameter of the reaction chamber gradually increases from the air inlet end toward the wafer placement position 122a.
[0131] Exemplarily, the reaction chamber is configured as a conical structure, wherein the angle between the conical surface and the central axis of the reaction chamber is 20° to 70°. For example, the angle between the conical surface and the central axis of the reaction chamber can be 20°, 25°, 30°, 60°, 70°, etc.
[0132] The embodiment of the present application gradually increases the inner diameter of the reaction chamber from the air inlet end toward the wafer placement position 122a, so that the reaction gas can be evenly diffused along the inner wall of the reaction chamber to the wafer placement position 122a, so that the deposition layer on the surface of the wafer is uniform, thereby improving the coating quality of the wafer.
[0133] In some examples, the direction from the air inlet end to the wafer placement position 122a of the reaction chamber includes at least a first diffusion region 1211, a buffer region 1221, a second diffusion region 1222, and a placement region 1223;
[0134] The inner diameter of the first diffusion zone 1211 gradually increases from the air inlet end to the buffer zone 1221;
[0135] The buffer zone 1221 extends along one end of the first diffusion zone 1211 facing away from the air inlet end toward the second diffusion zone 1222 ;
[0136] The inner diameter of the second diffusion area 1222 gradually increases from the end of the buffer area 1221 facing away from the first diffusion area 1211 toward the placement area 1223;
[0137] The placement area 1223 extends along one end of the second diffusion area 1222 facing away from the buffer area 1221 toward the wafer placement position 122 a ; the wafer placement position 122 a is disposed at the bottom of the placement area 1223 .
[0138] Exemplarily, the first diffusion area 1211 and the second diffusion area 1222 are configured as conical structures, and the buffer area 1221 and the placement area 1223 are configured as straight cylindrical structures.
[0139] For example, the angle between the conical surface of the first diffusion region 1211 and the second diffusion region 1222 and the central axis of the reaction chamber is 20° to 70°. For example, the angle between the conical surface and the central axis of the reaction chamber can be 20°, 25°, 30°, 60°, 70°, etc.
[0140] The embodiment of the present application sets a first diffusion zone 1211, a buffer zone 1221, a second diffusion zone 1222 and a placement zone 1223 in the direction from the air inlet end to the wafer placement position 122a of the reaction chamber. Compared with setting only the first diffusion zone 1211, the area of the reaction chamber can be reduced. When the volume of the introduced reaction gas remains unchanged, the smaller the area of the reaction chamber, the more the concentration of the reaction gas and the controllability of the reaction gas can be guaranteed, so that the reaction gas is evenly deposited on the wafer surface for reaction, thereby improving the uniformity of the deposition layer on the wafer surface.
[0141] Exemplarily, the reaction mechanism 100 includes a reaction outer shell 110 and a reaction inner shell 120, the reaction outer shell 110 forms a receiving chamber 111, and the reaction inner shell 120 is disposed in the receiving chamber 111;
[0142] The reaction inner shell 120 includes a first shell 121 and a second shell 122. One end of the first shell 121 is connected to the pipeline integration mechanism 200, and the other end of the first shell 121 extends toward the wafer placement position 122a.
[0143] A first diffusion area 1211 is formed in the first shell 121 ; a buffer area 1221 , a second diffusion area 1222 and a placement area 1223 are formed in the second shell 122 ;
[0144] The side wall of the reaction mechanism 100 is also provided with a wafer conveying channel connected to the accommodating chamber 111 , and the second shell 122 can reciprocate in the vertical direction so that the wafer is placed into the wafer placement position 122 a of the placement area 1223 through the wafer conveying channel.
[0145] Exemplarily, the outer side wall of one end of the first shell 121 facing away from the pipeline integration mechanism 200 is configured as a vertical cylindrical surface, so as to facilitate relative movement with the second shell 122 when the second shell 122 reciprocates in the vertical direction.
[0146] Exemplarily, the placement area 1223 is provided with a wafer placement position 122a, and the wafer placement position 122a is arranged at the bottom of the placement area 1223. Among them, the wafer placement position 122a can be set as a wafer carrier, one end of the wafer carrier is set on the inner wall of the reaction chamber, and the other end of the wafer carrier extends toward the central axis direction of the reaction chamber.
[0147] During the specific implementation, the second shell 122 moves along the vertical direction toward the pipeline integrated mechanism 200. When the wafer placement position 122a moves to the middle position of the wafer conveying channel, the second shell 122 stops moving, and the wafer transfer component will be transferred from the wafer conveying channel to the reaction chamber, just located on the upper part of the wafer supporting plate. The wafer transfer component drags the wafer downward, and after the wafer completely falls onto the wafer supporting plate and is separated from the wafer transfer component, the wafer transfer component is moved out of the wafer conveying channel, and the second shell 122 is moved along the vertical direction away from the pipeline integrated mechanism 200 until it moves to the preset position.
[0148] In the embodiment of the present application, the first shell 121 and the second shell 122 are provided, and a wafer conveying channel is provided on the side wall of the reaction mechanism 100 . The second shell 122 can reciprocate in the vertical direction, thereby facilitating the conveyance of the wafers.
[0149] Figure 6 yes Figure 1 Partial structure diagram of Figure 1 ; Figure 7 yes Figure 1 Partial structure diagram of Figure 2 ; Figure 8 yes Figure 1 Partial structure diagram of Figure 3 ; Fig. 9 yes Figure 1 Top view of .
[0150] Reference Figures 6 to 9 In some examples, the wafer reaction device further includes a lifting mechanism 300, and the lifting mechanism 300 includes a movable frame 310, a driving member 320, a movable rod 330 and a guide seal 340;
[0151] The fixed end of the driving member 320 is disposed on the reaction housing 110 , and the lifting end of the driving member 320 is disposed on the movable frame 310 ;
[0152] One end of the guide seal 340 is fixed to the movable frame 310, and the other end of the guide seal 340 is fixed to the reaction housing 110. One end of the movable rod 330 is connected to the movable frame 310, and the other end of the movable rod 330 passes through the guide seal 340, the accommodating chamber 111 and is connected to the second housing 122 in sequence.
[0153] The lifting end is configured to drive the movable frame 310 to move in the vertical direction, so that the movable rod 330 drives the second shell 122 to move up and down in the vertical direction.
[0154] Exemplarily, the guide seal 340 includes a sealing bellows 341 and a straight tube 342, one end of the sealing bellows 341 is connected to the movable frame 310, the other end of the sealing bellows 341 is connected to one end of the straight tube 342, the other end of the straight tube 342 is connected to the upper end of the reaction shell 110, one end of the interactive rod is connected to the movable frame 310, and the other end of the movable rod 330 passes through the sealing bellows 341, the straight tube 342, the accommodating chamber 111 and the second shell 122 in sequence.
[0155] In a specific implementation, the driving member 320 is usually arranged on one side of the movable frame 310. In order to improve the stability of the wafer reaction device, the wafer reaction device is also provided with a supporting mechanism 400, which includes a sleeve 410 and an extended sliding rod 420, wherein one end of the sleeve 410 is connected to the reaction housing 110, and the other end of the sleeve 410 extends toward the movable frame 310, one end of the extended sliding rod 420 is connected to the movable frame 310, and the other end of the extended sliding rod 420 passes through the sleeve 410 and is connected to the reaction housing 110. By providing the sleeve 410 and the extended sliding rod 420, the stability of the reciprocating movement of the second housing 122 in the vertical direction can be further improved, thereby improving the stability of the wafer during the transmission process.
[0156] The embodiment of the present application can ensure that the second shell 122 can move stably in the vertical direction by disposing the lifting mechanism 300 and the supporting mechanism 400, so that the wafer can be stably placed into the reaction chamber or taken out of the reaction chamber.
[0157] Fig.10 yes Figure 1 Partial structure diagram of Figure 4 .
[0158] In another implementation, referring to Fig.10 , an annular first protrusion 122b is provided around the outer side wall of the second shell 122;
[0159] The lifting mechanism 300 further includes an adjustment assembly 350 , which includes an adjustment rod 351 , a first adjustment knob 352 , a first locking nut 353 , a first gasket 354 , a second adjustment knob 355 , a second locking nut 356 , and a second gasket 357 ;
[0160] One end of the adjusting rod 351 is rotatably connected to the other end of the movable rod 330, and the other end of the adjusting rod 351 passes through the first protrusion 122b;
[0161] One end of the first adjusting knob 352 abuts against one side of the first protrusion 122b through the first gasket, and the other end of the first adjusting knob abuts against the first locking nut 353, and the first locking nut 353, the first adjusting knob 352 and the first gasket 354 are sequentially sleeved on the outer wall of the adjusting rod 351;
[0162] One end of the second adjusting knob 355 abuts against the other side of the first protrusion 122b through the second gasket, and the other end of the second adjusting knob 355 abuts against the second locking nut 356, and the second gasket 357, the second adjusting knob 355 and the second locking nut 356 are respectively sleeved on the outer wall of the adjusting rod 351.
[0163] Exemplarily, one end of the adjusting rod 351 is provided with a thread, and the other end of the movable rod 330 is provided with a threaded hole that is mutually adapted to the adjusting rod 351 , and the adjusting hole can rotate along the threaded hole.
[0164] Exemplarily, a plurality of movable rods 330 are disposed around the second shell 122 , and further, a plurality of adjustment assemblies 350 are disposed around the second shell 122 .
[0165] Exemplarily, an annular second protrusion 122c is further provided on the outer side wall surrounding the second shell 122. The second protrusion 122c is provided below the first protrusion 122b. A connecting piece is provided between the first protrusion 122b and the second protrusion 122c so that the second protrusion 122c supports the first protrusion 122b.
[0166] In specific implementation, when it is necessary to adjust the adjusting rod 351 toward the movable rod 330, the second locking nut 356 and the second adjusting knob 355 can be loosened in sequence, and then the adjusting rod 351 is rotated to move the adjusting rod 351 toward the movable rod 330. When the adjusting rod 351 moves to a preset position, the second gasket 357 is abutted against the other side of the first protrusion 122b, the second adjusting knob 355 is abutted against the second gasket 357 and the second adjusting knob 355 is tightened, and then the second locking nut 356 is abutted against the second adjusting knob 355 and the second locking nut 356 is tightened. Then, after loosening the first locking nut 353 and the first adjusting knob 352, the first gasket 354 is abutted against one side of the first protrusion 122b, the second adjusting knob 355 is abutted against the first gasket 354 and the first adjusting knob 352 is tightened, and then the first locking nut 353 is abutted against the first adjusting knob 352 and the first locking nut 353 is tightened. It should be noted that when the adjusting rod 351 needs to be adjusted away from the movable rod 330, the method is similar to the method of adjusting the adjusting rod 351 toward the movable rod 330.
[0167] The embodiment of the present application can adjust the position of the second shell 122 in the vertical direction by setting the adjustment rod 351, further adjust the position of the wafer carrier, and then adjust the position of the wafer to keep the wafer level, so that the wafer surface can be evenly deposited and the quality of wafer coating can be improved. The embodiment of the present application can fix the position of the adjustment rod 351 by setting the first adjustment knob 352 and the second adjustment knob 355; the embodiment of the present application can fix the first adjustment knob 352 and the second adjustment knob 355 by setting the first locking nut 353 and the second locking nut 356, thereby improving the stability of the adjustment component 350. The embodiment of the present application reduces pressure and prevents loosening by setting the first gasket 354 and the second gasket 357, and the adjustment component 350 plays a certain protective role.
[0168] Fig.11 yes Figure 1 Schematic diagram of the structure in which the ceramic shunt is assembled on the outer shell.
[0169] Reference Fig.11 , in some examples, the wafer reaction apparatus further includes a ceramic shunt 500;
[0170] The ceramic diverter 500 is disposed on the top of the first housing 121. The gas outlet end of the ceramic diverter 500 is configured as a columnar structure. The gas outlet end is provided with a plurality of air diffusion holes 510. The air diffusion holes 510 are connected to the accommodating cavity 111.
[0171] The ceramic diverter 500 is used to transport the inert gas into the containing chamber 111 so that the pressure in the containing chamber 111 is greater than the pressure in the reaction chamber.
[0172] In the specific implementation, the pipeline integrated mechanism 200 is used to introduce inert gas (nitrogen) and reaction gases such as precursor A, precursor B1, precursor B2 into the reaction chamber. At the same time, the ceramic diverter 500 is used to transport inert gas (nitrogen) into the containing chamber 111 and ensure that the pressure in the containing chamber 111 is greater than the pressure in the reaction chamber to avoid overflow of the reaction gas in the reaction chamber.
[0173] The embodiment of the present application, through the provision of the ceramic diverter 500, can transport inert gas into the accommodating chamber 111 through the ceramic diverter 500, so that the pressure in the accommodating chamber 111 is greater than the pressure in the reaction chamber, thereby preventing the reaction gas in the reaction chamber from overflowing through the gap between the first shell 121 and the second shell 122.
[0174] Reference Figure 4In some other implementations, the reaction inner shell 120 further includes a third shell 123, which extends from the bottom of the wafer placement position 122a toward the second shell 122 and is sleeved on the outer side wall of the second shell 122;
[0175] The wafer reaction device further includes a first heating mechanism 600 and a second heating mechanism 700;
[0176] The first heating mechanism 600 is disposed between the third shell 123 and the reaction housing 110 , and the second heating mechanism 700 is disposed below the wafer placement position 122 a ; both the first heating mechanism 600 and the second heating mechanism 700 are used to heat the wafer.
[0177] In the specific implementation, in order to prevent the temperature of the third shell 123 from being too high and causing damage to the staff by accidental touch, the heating temperature of the first heating mechanism 600 can be set to between 36°C and 40°C, which can play a role in keeping the reaction chamber warm. Furthermore, the heating temperature of the second heating mechanism 700 can be set to a higher temperature required for wafer coating, so as to evenly heat the wafer.
[0178] Exemplarily, the first heating mechanism 600 includes a heat insulating member and a heating assembly, wherein the heating assembly can be configured as a heating wire, a heat insulating member is disposed on the inner wall of the reaction shell 110 , and the heating assembly is disposed between the heat insulating member and the third shell 123 .
[0179] The embodiment of the present application can keep the reaction chamber warm by disposing the first heating mechanism 600, and can evenly heat the wafer and improve the quality of wafer coating by disposing the second heating mechanism 700, because the second heating mechanism 700 is disposed below the wafer placement position 122a.
[0180] Fig.12 yes Figure 4 Schematic diagram of the structure of the heat transfer plate.
[0181] For example, continue to refer to Figure 4 and Fig.12 , the second heating mechanism 700 includes a carrier 710 , a heating wire 720 and a heat conducting plate 730 ;
[0182] The carrier 710 is disposed below the wafer placement position 122a, the heat conducting plate 730 is disposed between the carrier 710 and the wafer placement position 122a, and the carrier 710 and the heat conducting plate 730 are integrally formed, the heating wire 720 is disposed between the carrier 710 and the heat conducting plate 730, and the carrier 710 is connected to the bottom of the third housing 123 through a plurality of annularly arranged connecting columns;
[0183] The heat conducting plate 730 includes an inner circle and an annular region arranged outside the inner circle. The inner circle and the heating wire 720 are arranged correspondingly, and a plurality of air holes 731 are arranged in the annular region.
[0184] Exemplarily, the carrier 710 and the heat conducting plate 730 are integrally arranged, and the outer wall of the carrier 710 is provided with a connecting protrusion extending in the direction of the heat conducting plate 730, and the carrier 710 and the heat conducting plate 730 are connected via the connecting protrusion. The heating wire 720 is arranged between the carrier 710 and the heat conducting plate 730, and the heating wire is arranged corresponding to the inner circle.
[0185] For example, the heating wires 720 may be arranged in an annular ring shape, and the distance between two adjacent rings of the heating wires 720 is equal, so as to achieve uniform heating of the wafer.
[0186] For another example, the aperture of the middle two side areas along the horizontal direction of the air vent hole 731 is larger than the aperture of the remaining areas. In a specific implementation, the middle two side areas along the horizontal direction of the air vent hole 731 are set as the first area, and the remaining areas are set as the second area, wherein the aperture of the air vent hole 731 in the first area is larger than the aperture of the air vent hole 731 in the second area, and the first area and the wafer carrier plate set at the wafer placement position 122a are set corresponding to each other.
[0187] For another example, a support base is disposed below the carrier 710, the support base is used to support the carrier 710, and a vacuum channel is formed on the support base, wherein the vacuum channel is connected to the reaction chamber for evacuating the reaction chamber.
[0188] In the embodiment of the present application, the heat conducting plate 730 is configured as an annular structure, and the inner ring of the annular structure is configured correspondingly to the heating wire 720, so that the heating wire 720 can directly heat the wafer at the bottom of the wafer, which can not only achieve uniform heating of the wafer, but also improve the heating efficiency of the wafer. In the embodiment of the present application, multiple air holes 731 are provided on the surface of the heat conducting plate 730, so that the excess gas in the reaction chamber can be discharged to prevent the reaction gas from corroding the reaction chamber.
[0189] It is easy to understand that those skilled in the art can combine, split, reorganize, etc. the embodiments of the present application to obtain other embodiments based on the several embodiments provided in the present application, and these embodiments do not exceed the protection scope of the present application.
[0190] The above specific implementation methods further explain in detail the purpose, technical solutions and beneficial effects of the embodiments of the present application. It should be understood that the above are only specific implementation methods of the embodiments of the present application and are not used to limit the protection scope of the embodiments of the present application. Any modifications, equivalent substitutions, improvements, etc. made on the basis of the technical solutions of the embodiments of the present application should be included in the protection scope of the embodiments of the present application.
Claims
1. A wafer reaction device, characterized in that: include: A reaction mechanism (100), wherein the reaction mechanism (100) is formed with a reaction chamber, wherein at least a portion of an inner wall of the reaction chamber is arranged tilted, and a wafer placement position (122a) for carrying a wafer is arranged in the reaction chamber; A pipeline integrated mechanism (200), the pipeline integrated mechanism (200) comprising a first air inlet pipe (210), a plurality of second air inlet pipes (220) and an air outlet piece (230), the first air inlet pipe (210) and the plurality of second air inlet pipes (220) being used to respectively transport different reaction gases into the reaction chamber, the air outlet end of the first air inlet pipe (210) and the air outlet ends of the plurality of second air inlet pipes (220) being both connected to the air inlet end of the air outlet piece (230), the air outlet end of the air outlet piece (230) being arranged correspondingly to the air inlet end of the reaction chamber, the air outlet end of the air outlet piece (230) being provided with a plurality of air outlet holes so that the reaction gas can diffuse along the inner wall of the reaction chamber to the wafer placement position (122a); The pipeline integrated mechanism (200) further includes a communication component (240); The connecting component (240) is arranged in an annular structure, and the outlet ends of the plurality of second air inlet pipes (220) are connected to the air outlet member (230) via the connecting component (240), and the connecting component (240) is arranged around the first air inlet pipe (210); The communication component (240) includes a storage component (241) and a communication component (242); The storage element (241) is configured as an annular structure, the outlet ends of the plurality of second air inlet pipes (220) are connected to the air inlet end of the storage element (241), the outlet end of the storage element (241) is connected to the air inlet ends of the plurality of connecting elements (242), and the outlet ends of the plurality of connecting elements (242) are connected to the air inlet end of the air outlet element (230); Wherein, the radial dimension of the storage element (241) is larger than the inner diameter of the outlet end of the second air inlet pipe (220), and the inner diameter of the connecting element (242) is smaller than the inner diameter of the outlet end of the second air inlet pipe (220); The pipeline integration mechanism (200) further includes a purge air intake pipe (250), an air intake branch pipe (251) and an air intake passage (252); The purge air intake pipe (250) is connected to one end of the air intake channel (252), the air intake channel (252) is arranged in an annular structure, and the other end of the air intake channel (252) is connected to one end of a plurality of air intake branch pipes (251), and the other ends of the plurality of air intake branch pipes (251) are connected to a plurality of second air intake pipes (220) correspondingly; The pipeline integration mechanism (200) further includes a purge exhaust pipe (260), an exhaust branch pipe (261) and an exhaust channel (262); The purge exhaust pipe (260) is connected to one end of the exhaust channel (262), the exhaust channel (262) is arranged in an annular structure, and the other end of the exhaust channel (262) is connected to one end of a plurality of exhaust branch pipes (261), and the other ends of the plurality of exhaust branch pipes (261) are connected to a plurality of second intake pipes (220) correspondingly; The purge inlet pipe (250) is used to blow in purge gas, and the purge exhaust pipe (260) is used to exhaust purge gas and impurity gas; The pipeline integration mechanism (200) further comprises a first injection member (251a) and a second injection member (261a); A plurality of the first injection members (251a) are detachably arranged in the air intake branch pipe (251), and the inner diameter of the first injection member (251a) is smaller than the inner diameter of the air intake branch pipe (251); A plurality of the second injection members (261a) are detachably arranged in the exhaust branch pipe (261); the inner diameter of the second injection member (261a) is smaller than the inner diameter of the exhaust branch pipe (261).
2. A wafer reaction device according to claim 1, characterized in that: The first air intake pipe (210) comprises a first air intake section (211), a second air intake section (212) and a third air intake section (213) which are connected in sequence; The inner diameter of the second air intake section (212) is greater than the inner diameter of the first air intake section (211), the inner diameter of the third air intake section (213) is greater than the inner diameter of the second air intake section (212), and at least part of the third air intake section (213) is inclined.
3. A wafer reaction device according to claim 2, characterized in that: The first air inlet pipe (210) further includes an inclined section (214); The first end of the inclined section (214) is connected to the first air inlet section (211), the second end of the inclined section (214) is connected to the second air inlet section (212), and the inner diameter of the inclined section (214) gradually increases from the first end to the second end; The third air inlet section (213) comprises a first uniform area (213a), a connecting area (213b) and a second uniform area (213c) which are connected in sequence, the air inlet end of the first uniform area (213a) is connected to the air outlet end of the second air inlet section (212), and the inner diameter of the first uniform area (213a) gradually increases from the air outlet end of the second air inlet section (212) to the connecting area (213c); The two ends of the connecting area (213b) are respectively connected to the first uniform area (213a) and the second uniform area (213b), and the inner diameter of the second uniform area (213b) gradually increases from the gas outlet end of the connecting area (213c) to the gas outlet end of the second uniform area (213c).
4. A wafer reaction device according to any one of claims 1 to 3, characterized in that: The inner diameter of the reaction chamber gradually increases from the gas inlet end toward the wafer placement position (122a).
5. A wafer reaction device according to any one of claims 1 to 3, characterized in that: The direction of the reaction chamber from the air inlet end to the wafer placement position (122a) at least includes a first diffusion area (1211), a buffer area (1221), a second diffusion area (1222) and a placement area (1223); Wherein, the inner diameter of the first diffusion zone (1211) gradually increases from the air inlet end toward the buffer zone (1221); The buffer zone (1221) extends along an end of the first diffusion zone (1211) facing away from the air inlet end toward the second diffusion zone (1222); The inner diameter of the second diffusion zone (1222) gradually increases from the end of the buffer zone (1221) facing away from the first diffusion zone (1211) toward the placement zone (1223); The placement area (1223) extends along one end of the second diffusion area (1222) facing away from the buffer zone (1221) towards the wafer placement position (122a); the wafer placement position (122a) is arranged at the bottom of the placement area (1223).
6. The wafer reaction device according to claim 5, characterized in that: The reaction mechanism (100) comprises a reaction outer shell (110) and a reaction inner shell (120), wherein the reaction outer shell (110) forms a receiving cavity (111), and the reaction inner shell (120) is arranged in the receiving cavity (111); The reaction inner shell (120) comprises a first shell (121) and a second shell (122); one end of the first shell (121) is connected to the pipeline integration mechanism (200), and the other end of the first shell (121) extends in the direction of the wafer placement position (122a); The first diffusion area (1211) is formed in the first shell (121); the buffer area (1221), the second diffusion area (1222) and the placement area (1223) are formed in the second shell (122); The side wall of the reaction mechanism (100) is also provided with a wafer conveying channel connected to the accommodating chamber (111), and the second shell (122) can reciprocate in the vertical direction so that the wafer is placed into the wafer placement position (122a) of the placement area (1223) through the wafer conveying channel.
7. The wafer reaction device according to claim 6, characterized in that: The wafer reaction device further comprises a lifting mechanism (300), wherein the lifting mechanism (300) comprises a movable frame (310), a driving member (320), a movable rod (330) and a guide sealing member (340); The fixed end of the driving member (320) is arranged on the reaction housing (110), and the lifting end of the driving member (320) is arranged on the movable frame (310); One end of the guide seal (340) is fixed to the movable frame (310), the other end of the guide seal (340) is fixed to the reaction housing (110), one end of the movable rod (330) is connected to the movable frame (310), and the other end of the movable rod (330) passes through the guide seal (340), the accommodating cavity (111) and the second shell (122) in sequence to be connected; The lifting end is configured to drive the movable frame (310) to move in a vertical direction, so that the movable rod (330) drives the second shell (122) to move up and down in the vertical direction.
8. The wafer reaction device according to claim 7, characterized in that: An annular first protrusion (122b) is arranged around the outer side wall of the second shell (122); The lifting mechanism (300) further comprises an adjusting assembly (350), wherein the adjusting assembly (350) comprises an adjusting rod (351), a first adjusting knob (352), a first locking nut (353), a first gasket (354), a second adjusting knob (355), a second locking nut (356) and a second gasket (357); One end of the adjusting rod (351) is rotatably connected to the other end of the movable rod (330), and the other end of the adjusting rod (351) passes through the first protrusion (122b); One end of the first adjusting knob (352) abuts against one side of the first protrusion (122b) through the first gasket (354), and the other end of the first adjusting knob (352) abuts against the first locking nut (353), and the first locking nut (353), the first adjusting knob (352) and the first gasket (354) are sequentially sleeved on the outer side wall of the adjusting rod (351); One end of the second adjusting knob (355) abuts against the other side of the first protrusion (122b) through the second gasket (357), and the other end of the second adjusting knob (355) abuts against the second locking nut (356), and the second gasket (357), the second adjusting knob (355) and the second locking nut (356) are sequentially sleeved on the outer side wall of the adjusting rod (351).
9. The wafer reaction device according to claim 8, characterized in that: The wafer reaction device also includes a ceramic shunt (500); The ceramic diverter (500) is arranged on the top of the first shell (121); the gas outlet end of the ceramic diverter (500) is arranged as a columnar structure; the gas outlet end is provided with a plurality of gas diffusion holes (510); and the gas diffusion holes (510) are in communication with the accommodating cavity (111); The ceramic diverter (500) is used to transport an inert gas into the containing chamber (111), so that the pressure in the containing chamber (111) is greater than the pressure in the reaction chamber.
10. The wafer reaction device according to claim 9, characterized in that: The reaction inner shell (120) further comprises a third shell (123), wherein the third shell (123) extends from the bottom of the wafer placement position (122a) toward the second shell (122) and is sleeved on the outer side wall of the second shell (122); The wafer reaction device also includes a first heating mechanism (600) and a second heating mechanism (700); The first heating mechanism (600) is arranged between the third shell (123) and the reaction shell (110), and the second heating mechanism (700) is arranged below the wafer placement position (122a); the first heating mechanism (600) and the second heating mechanism (700) are both used to heat the wafer.
11. The wafer reaction device according to claim 10, characterized in that: The second heating mechanism (700) comprises a carrier (710), a heating wire (720) and a heat conducting plate (730); The carrier (710) is arranged below the wafer placement position (122a), the heat conducting plate (730) is arranged between the carrier (710) and the wafer placement position (122a), and the carrier (710) and the heat conducting plate (730) are integrally formed, the heating wire (720) is arranged between the carrier (710) and the heat conducting plate (730), and the carrier (710) is connected to the bottom of the third shell (123) via a plurality of annularly arranged connecting columns; The heat conducting plate (730) comprises an inner circle and an annular region arranged outside the inner circle, the inner circle and the heating wire (720) are arranged correspondingly, and the annular region is provided with a plurality of air vents (731).