Semiconductor laser device and electronic device

Abstract

The invention discloses a semiconductor laser device, including a substrate, a heat sink, a semiconductor refrigerator and a laser chip, wherein the heat sink is arranged on the semiconductor refrigerator, the semiconductor refrigerator is arranged on the substrate, the laser chip is arranged on the heat sink, a forked heat dissipation mechanism is arranged on the heat sink, the first end of the forked heat dissipation mechanism is connected to the heat sink, and the second end of the forked heat dissipation mechanism dissipates heat by contacting with air. The forked heat dissipation mechanism is arranged on the heat sink, which fully increases the heat dissipation area in a limited space, which is conducive to better heat dissipation.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a semiconductor laser device and an electronic device. Background Art

[0002] At present, semiconductor lasers are lasers that use semiconductor materials as gain media, rely on the transition between semiconductor energy bands to emit light, and usually use the natural cleavage surface as the resonant cavity. Therefore, they have the advantages of wide wavelength coverage, small size, stable structure, strong radiation resistance, diverse pumping methods, high yield, good reliability, and easy high-speed modulation. Semiconductor lasers are widely used in optical communications, medical health, industrial processing, laser display, laser indication, laser sensing and other fields.

[0003] The laser chip in the semiconductor laser generates heat, so how to better dissipate heat is an issue that needs to be considered when assembling the semiconductor laser. Because the volume of existing lasers is limited, the heat dissipation capacity of existing heat dissipation devices in a limited space is limited. Summary of the invention

[0004] To this end, the present invention provides a semiconductor laser device and an electronic device in an effort to solve or at least alleviate at least one of the above problems.

[0005] According to one aspect of the present invention, there is provided a semiconductor laser device, comprising a substrate, a heat sink, a semiconductor refrigerator and a laser chip, wherein the heat sink is arranged on the semiconductor refrigerator, the semiconductor refrigerator is arranged on the substrate, the laser chip is arranged on the heat sink, and a forked heat dissipation mechanism is arranged on the heat sink, wherein a first end of the forked heat dissipation mechanism is connected to the heat sink, and a second end of the forked heat dissipation mechanism dissipates heat by contacting with air.

[0006] Optionally, the heat sink includes a main body and a raised portion, the raised portion is arranged on the main body, the first end of the bifurcated heat dissipation mechanism is connected to the main body, and the third end of the bifurcated heat dissipation mechanism is connected to the raised portion.

[0007] Optionally, the semiconductor refrigerator includes a first substrate, a second substrate, a third substrate, a first semiconductor layer and a second semiconductor layer, the first semiconductor layer is arranged between the first substrate and the second substrate, the second semiconductor layer is arranged between the second substrate and the third substrate, and the second substrate is arranged between the first semiconductor layer and the second semiconductor layer; the first substrate is in contact with the base, the second substrate is in contact with the main body, and the third substrate is in contact with the protruding portion; the first substrate and the second substrate are both cold ends of the semiconductor refrigerator when dissipating heat; optionally, the projection area of ​​the third substrate on the first substrate is smaller than the projection area of ​​the second substrate on the first substrate.

[0008] Optionally, the surface where the raised portion contacts the bifurcated heat dissipation mechanism is a curved surface.

[0009] Optionally, the bifurcated heat dissipation mechanism includes a main bifurcated heat dissipation mechanism, a first sub-bifurcated heat dissipation mechanism and a second sub-bifurcated heat dissipation mechanism, and the first sub-bifurcated heat dissipation mechanism and the second sub-bifurcated heat dissipation mechanism are respectively arranged on two branches of the main bifurcated heat dissipation mechanism; optionally, a branch of the first sub-bifurcated heat dissipation mechanism is connected to the protrusion.

[0010] Optionally, the semiconductor laser device includes a plurality of forked heat dissipation mechanism groups, the plurality of forked heat dissipation mechanism groups are arranged side by side, each forked heat dissipation mechanism group includes a first forked heat dissipation mechanism and a second forked heat dissipation mechanism, the first forked heat dissipation mechanism and the second forked heat dissipation mechanism in each forked heat dissipation mechanism group have different main forking directions, and one end of the second forked heat dissipation mechanism in each forked heat dissipation mechanism group is connected to the protrusion.

[0011] Optionally, two first bifurcated heat dissipation mechanisms in two adjacent bifurcated heat dissipation mechanism groups are connected to each other, and the first bifurcated heat dissipation mechanism and the second bifurcated heat dissipation mechanism in each bifurcated heat dissipation mechanism group do not contact each other.

[0012] Optionally, a boss is provided on the main body, and the bifurcated heat dissipation mechanism is connected to the main body via the boss.

[0013] Optionally, the laser chip is arranged on a surface of the main body away from the raised portion.

[0014] According to another aspect of the present invention, there is provided an electronic device comprising the semiconductor laser device described above.

[0015] The semiconductor laser device according to the present invention comprises a substrate, a heat sink, a semiconductor refrigerator and a laser chip, wherein the heat sink is arranged on the semiconductor refrigerator, the semiconductor refrigerator is arranged on the substrate, the laser chip is arranged on the heat sink, a bifurcated heat dissipation mechanism is arranged on the heat sink, the first end of the bifurcated heat dissipation mechanism is connected to the heat sink, and the second end of the bifurcated heat dissipation mechanism dissipates heat by contacting with air. The bifurcated heat dissipation mechanism is arranged on the heat sink, which fully increases the heat dissipation area within a limited space, which is conducive to better heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0017] Figure 1 A schematic structural diagram of a semiconductor laser device according to an embodiment of the present invention is shown;

[0018] Figure 2 A schematic diagram of the structure of a heat sink according to an embodiment of the present invention is shown;

[0019] Figure 3 A schematic structural diagram of a semiconductor refrigerator according to an embodiment of the present invention is shown;

[0020] Figure 4 A schematic diagram of the structure of a semiconductor refrigerator and a heat sink after being assembled according to an embodiment of the present invention is shown;

[0021] Figure 5 shows a right side view of a heat sink according to one embodiment of the present invention;

[0022] Figure 6 shows a top view of a heat sink according to one embodiment of the present invention;

[0023] Figure 7 A structural exploded diagram of a coaxial laser according to an embodiment of the present invention is shown;

[0024] Figure 8 A schematic diagram of the structure of a butterfly packaged laser according to an embodiment of the present invention is shown;

[0025] Fig. 9 A schematic structural diagram of an assembled heat sink and semiconductor cooler for a butterfly packaged laser according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0026] The exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present application and to fully convey the scope of the present application to those skilled in the art.

[0027] Some implementation modes of the present application are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.

[0028] Figure 1 FIG. 1 is a schematic diagram of the structure of a semiconductor laser device according to an embodiment of the present invention. Figure 1As shown, the semiconductor laser device 10 includes a substrate 11, a heat sink 12, a semiconductor refrigerator 13 and a laser chip 14, the heat sink 12 is arranged on the semiconductor refrigerator 13, the semiconductor refrigerator 13 is arranged on the substrate 11, the laser chip 14 is arranged on the heat sink 12, and a forked heat dissipation mechanism 121 is arranged on the heat sink 12, the first end of the forked heat dissipation mechanism 121 is connected to the heat sink 12, and the second end of the forked heat dissipation mechanism 121 dissipates heat by contacting with the air. In the embodiment of the present invention, since the space of the semiconductor laser device is limited, a forked heat dissipation mechanism 121 is arranged on the heat sink, and the heat dissipation area is fully increased within the limited space, so that there is reason for better heat dissipation. Specifically, the second end of the forked heat dissipation mechanism 121 may not be connected to any component of the laser, but only in contact with the air. The specific forked heat dissipation mechanism 121 may be a V-shaped structure.

[0029] In the embodiment of the present application, the heat sink 12 and the bifurcated heat dissipation mechanism 121 both play a role in heat dissipation; the material of the heat sink can be tungsten copper alloy, or other heat dissipation materials, such as aluminum nitride, aluminum oxide, etc. The material of the bifurcated heat dissipation mechanism 121 can be the same as that of the heat sink.

[0030] Specifically, the bifurcated heat dissipation mechanism 121 and the heat sink 12 can be an integral structure; they can be integrally formed during production, which improves production efficiency. In addition, the bifurcated heat dissipation mechanism 121 and the heat sink 12 do not need to be connected by other connectors or welding, so that the heat dissipation path is smoother and the heat dissipation effect is better. The integral structure also has a better heat dissipation effect. The bifurcated heat dissipation mechanism 121 can be formed by a mold and then connected to the heat sink 12.

[0031] like Figure 2 As shown, the heat sink 12 includes a main body 122 and a protrusion 123, the protrusion 123 is arranged on the main body 122, the first end of the forked heat dissipation mechanism 121 is connected to the main body 122, and the third end of the forked heat dissipation mechanism 121 is connected to the protrusion 123. Since the forked heat dissipation mechanism 121 is also connected to the protrusion 123, the heat can also be discharged through the heat sink, which better improves the heat dissipation efficiency. Specifically, the forked heat dissipation mechanism 121 may include a first branch and a second branch that are forked based on a fork point, the first end of the forked heat dissipation mechanism 121 may be at the position of the fork point, the second end may be an end of one of the first branch and the second branch away from the fork point, and the third end may be an end of the other of the first branch and the second branch away from the fork point.

[0032] like Figures 1 to 4The semiconductor refrigerator 13 includes a first substrate 131, a second substrate 132, a third substrate 133, a first semiconductor layer 134 and a second semiconductor layer 135. The first semiconductor layer 134 is arranged between the first substrate 131 and the second substrate 132, the second semiconductor layer 135 is arranged between the second substrate 132 and the third substrate 133, and the second substrate 132 is arranged between the first semiconductor layer 134 and the second semiconductor layer 135; the first substrate 131 is in contact with the base 11, the second substrate 132 is in contact with the main body 122, and the third substrate 133 is in contact with the protrusion 123. Specifically, the second substrate 132 and the third substrate 133 are the cold ends of the semiconductor refrigerator when dissipating heat. At this time, the semiconductor refrigerator 13 has two cold ends, and the first substrate 131 is the hot end of the semiconductor refrigerator 13. In this way, the protrusion of the heat sink contacts one of the two cold ends of the semiconductor refrigerator, and the main body of the heat sink contacts the other of the two cold ends of the semiconductor refrigerator, which increases the heat dissipation path of the heat sink and is more conducive to the heat dissipation of the heat sink. Specifically, the heat on the protrusion 123 can be discharged through the third substrate 133, and the heat of the main body 122 can be discharged through the second substrate 132, which is conducive to better heat dissipation. On the other hand, the third end of the bifurcated heat dissipation mechanism 121 is connected to the protrusion 123, and the heat of the bifurcated heat dissipation mechanism 121 can also be discharged through the third substrate 133 connected to the protrusion 123. Such a structure increases the heat dissipation path and improves the overall heat dissipation effect.

[0033] Specifically, the first substrate 131, the second substrate 132 and the third substrate 133 are all ceramic substrates; electrodes are disposed on the first substrate 131, the second substrate 132 and the third substrate 133. The first semiconductor layer 134 and the second semiconductor layer 135 both include a plurality of semiconductor columns, specifically including P-type semiconductor columns and N-type semiconductor columns.

[0034] In the embodiment of the present invention, the projection area of ​​the third substrate 133 on the first substrate 131 is smaller than the projection area of ​​the second substrate 132 on the first substrate 131. A portion of the second substrate 132 is connected to the second semiconductor layer 135, and another portion is connected to the main body 122. Specifically, the surface 1231 where the protrusion 123 contacts the bifurcated heat dissipation mechanism 121 is a curved surface. In this way, the partial heat dissipation transmission path from the bifurcated heat dissipation mechanism 121 to the third substrate 133 can be shortened, which is conducive to improving the heat dissipation effect.

[0035] In the embodiment of the present invention, the bifurcated heat dissipation mechanism 121 includes a main bifurcated heat dissipation mechanism 1211 and a first sub-bifurcated heat dissipation mechanism 1212a and a second sub-bifurcated heat dissipation mechanism 1212b. The first sub-bifurcated heat dissipation mechanism 1212a and the second sub-bifurcated heat dissipation mechanism 1212b are respectively arranged on two branches of the main bifurcated heat dissipation mechanism 1211. Figure 5As shown. Specifically, one branch of the first sub-forked heat dissipation mechanism 1212a is connected to the protrusion 123. Another branch of the first sub-forked heat dissipation mechanism 1212a is in contact with the air. Both branches of the second sub-forked heat dissipation mechanism 1212b are directly in contact with the air. In this way, a part of the heat on the forked heat dissipation mechanism 121 can be conducted to the semiconductor refrigerator 13 through a branch and the protrusion of the first sub-forked heat dissipation mechanism 1212a, and another part of the heat can be conducted to the air through another branch of the first sub-forked heat dissipation mechanism 1212a and the second sub-forked heat dissipation mechanism 1212b. Specifically, a boss 1221 is provided on the main body 122, and the forked heat dissipation mechanism 121 is connected to the main body 122 through the boss 1221. Specifically, the main forked heat dissipation mechanism 1211 is connected to the main body 122 through the boss 1221. Specifically, the boss 1221, the bifurcated heat dissipation mechanism 121 and the heat sink 12 can be an integral structure, which eliminates the step of preparing each component separately, simplifies the preparation steps, and the components do not need to be connected by other connectors or welding, so the heat dissipation effect is better.

[0036] like Figure 2 and Figure 6 As shown, the semiconductor laser device includes a plurality of forked heat dissipation mechanism groups 120, and the plurality of forked heat dissipation mechanism groups 120 are arranged side by side, and each forked heat dissipation mechanism group 120 includes a first forked heat dissipation mechanism 121a and a second forked heat dissipation mechanism 121b, and the main forked directions of the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b in each forked heat dissipation mechanism group 120 are different, and one end of the second forked heat dissipation mechanism 121b in each forked heat dissipation mechanism group 120 is connected to the protruding portion. Specifically, the main forked directions of the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b refer to the forked directions of the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b from the first forked point in the heat dissipation path direction, respectively. Specifically, the heat dissipation path direction refers to the heat dissipation path direction from the main body of the heat sink to the first forked heat dissipation mechanism or the second forked heat dissipation mechanism. Specifically, the main forked direction of the first forked heat dissipation mechanism 121a and the main forked direction of the second forked heat dissipation mechanism 121b are perpendicular to each other. As shown in FIG. Figure 2 As shown, the main bifurcation direction of the first bifurcated heat dissipation mechanism 121a can be the Y direction, and the main bifurcation direction of the second bifurcated heat dissipation mechanism 121b can be the Z direction. Such a layout distribution can also ensure that more first bifurcated heat dissipation mechanisms and second bifurcated heat dissipation mechanisms are arranged in a limited space, which is more conducive to heat dissipation.

[0037] In the embodiment of the present invention, the two first forked heat dissipation mechanisms 121a in two adjacent forked heat dissipation mechanism groups 120 are connected to each other, and the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b in each forked heat dissipation mechanism group do not contact each other. In this way, there are at least two heat dissipation paths in each forked heat dissipation mechanism group 120. In one path, the heat is conducted to the air through the first forked heat dissipation mechanism 121a, and in another path, the heat is conducted to the raised portion 123 of the heat sink through the second forked heat dissipation mechanism 121b for heat dissipation, which further improves the heat dissipation effect. Specifically, the first forked heat dissipation mechanism 121a in each forked heat dissipation mechanism group 120 is not connected to the raised portion 123. In this way, it can be ensured that the heat has a variety of different conduction paths during heat dissipation conduction, which is conducive to faster heat dissipation.

[0038] In the embodiment of the present invention, the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b have the same structure. Specifically, each first forked heat dissipation mechanism 121a and each second forked heat dissipation mechanism 121b may include a main forked heat dissipation mechanism 1211 and a first sub-forked heat dissipation mechanism 1212a and a second sub-forked heat dissipation mechanism 1212b, and the first sub-forked heat dissipation mechanism 1212a and the second sub-forked heat dissipation mechanism 1212b are respectively arranged on two branches of the main forked heat dissipation mechanism 1211. Specifically, the two first forked heat dissipation mechanisms 121a in two adjacent forked heat dissipation mechanism groups 120 are connected through a branch in the first sub-forked heat dissipation mechanism 1212a of one of the first forked heat dissipation mechanisms 121a and a branch in the second sub-forked heat dissipation mechanism 1212b of another adjacent first forked heat dissipation mechanism 121a. Specifically, the structures of the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b may also be different. For example, the total number of forks of the first forked heat dissipation mechanism 121a and the second forked heat dissipation mechanism 121b is different.

[0039] In the embodiment of the present invention, Figure 4 As shown, the laser chip 14 is disposed on a surface of the main body 122 away from the protrusion 123. The surface is close to the second substrate 132 (ie, the cold end) of the semiconductor refrigerator 13, which can reduce the heat dissipation path of the heat generated by the laser chip.

[0040] like Figure 1 As shown, the semiconductor laser device further includes a thermistor 15, which is arranged on the main body 122, and the thermistor 15, the laser chip 14 and the bifurcated heat dissipation mechanism 121 are arranged on different surfaces of the main body 122. The thermistor is used to detect the temperature of the laser chip. The semiconductor laser device further includes a laser positive and negative transition plate 16 and a pin 17, and the positive and negative transition plate 16 is used to connect the electrode of the laser chip to the pin 17.

[0041] The semiconductor laser device in the embodiment of the present invention may specifically be a coaxial laser or a butterfly laser. Figure 7 This is the structural explosion diagram of the coaxial laser. Figure 7 As shown, the coaxial laser specifically includes a substrate 211 (also called a base), a heat sink 212, a semiconductor refrigerator 213 and a laser chip 214, the heat sink 212 is arranged on the semiconductor refrigerator 213, the semiconductor refrigerator 213 is arranged on the base 211, the laser chip 214 is arranged on the heat sink 212, and a bifurcated heat dissipation mechanism 2121 is arranged on the heat sink 212, the first end of the bifurcated heat dissipation mechanism 2121 is connected to the heat sink 212, and the second end of the bifurcated heat dissipation mechanism 2121 dissipates heat by contacting with the air. The coaxial laser also includes a thermistor 215, a laser positive and negative transition plate 216, a lens 217, a cap 218, and a pin 219. After the cap 218 and the base 211 are assembled and connected together, a storage space is formed, and other structures are wrapped in the storage space. An opening is arranged on the cap 218, which is the light outlet of the laser chip, and the lens 217 is arranged at the opening for collimating the laser emitted by the laser chip.

[0042] Figure 8 This is a schematic diagram of the structure of a butterfly packaged laser. Fig. 9 The schematic diagram of the heat sink and semiconductor cooler in the butterfly package laser. Figure 8-9 As shown, the butterfly package laser includes a heat sink 311, a semiconductor cooler 312, a laser chip 313, a tube shell 314, a pin 315, and an output optical fiber 316. The butterfly package laser also includes a lens, a filter, and an isolator; the lens is mainly used to collimate the laser, and the filter is mainly used to filter out the light of unnecessary wavelengths in the laser; the isolator is set at the output end of the laser, mainly to prevent interference from other optical signals and protect the normal operation of the laser.

[0043] Fig. 9 Structure and application of semiconductor refrigerator Figure 3 The structure is similar and will not be described in detail here. Fig. 9 A wave-shaped structure 3111 is provided on one surface of the heat sink, which is conducive to better heat dissipation of the heat sink. Of course, the heat sink here can also be Figure 2 A heat sink structure with a bifurcated heat mechanism.

[0044] The embodiment of the present invention further provides an electronic device, comprising the semiconductor laser device of the embodiment of the present invention. The electronic device may be a laser radar, an automobile, an optical communication device, etc. Specifically, when the electronic device is a laser radar, the semiconductor laser device in the embodiment of the present invention is used as a laser transmitter, and the laser radar also includes a laser receiver, a scanning system, and an information processing system.

[0045] In the description of the embodiments of the present application, it needs to be understood that the orientations or positional relationships indicated by “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc. are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0046] It should be understood that expressions such as "including" and "may include" that may be used in the present application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In the present application, terms such as "including" and / or "having" may be interpreted as indicating specific characteristics, numbers, operations, constituent elements, components, or combinations thereof, but may not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0047] In addition, in the embodiments of the present application, the expression "and / or" includes any and all combinations of the associated listed words. For example, the expression "A and / or B" may include A, may include B, or may include both A and B.

[0048] In the embodiments of the present application, expressions including ordinal numbers such as "first" and "second" can modify various elements. However, such elements are not limited by the above expressions. For example, the above expressions do not limit the order and / or importance of the elements. The above expressions are only used to distinguish one element from other elements.

[0049] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0050] In the description of the embodiments of the present application, unless otherwise specified, “plurality” means two or more.

[0051] In the description of the embodiments of the present application, when a component is referred to as being "connected" or "accessed" to other components, it should be understood that: the component is not only directly connected to or accessed to other components, but also another component may exist between the component and the other components. On the other hand, when a component is referred to as being "directly connected" or "directly accessed" to other components, it should be understood that there is no component between them. When a component is referred to as being "movably connected" to other components, it means that the positional relationship between the component and the other components is changeable, such as the relationship between a slide rail and a slider, the slider can slide on the slide rail, and the slide rail and the track are movably connected. When a component is referred to as being "fixedly connected" to other components, it means that the positional relationship between the component and the other components after being assembled together is relatively fixed.

[0052] Furthermore, those skilled in the art will appreciate that although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features from different embodiments is meant to be within the scope of the present application and to form different embodiments.

[0053] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Although the present application is described according to a limited number of embodiments, it is understood by the technicians in the technical field that other embodiments can be envisioned within the scope of the present application described thereby, thanks to the above description. In addition, it should be noted that the language used in this specification is mainly selected for the purpose of readability and teaching, rather than for explaining or limiting the subject matter of the present application. Therefore, without departing from the scope and spirit of the attached claims, many modifications and changes are obvious to those of ordinary skill in the art. For the scope of the present application, the disclosure made in the present application is illustrative, not restrictive, and the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A semiconductor laser device, characterized in that: It includes a substrate, a heat sink, a semiconductor refrigerator and a laser chip, wherein the heat sink is arranged on the semiconductor refrigerator, the semiconductor refrigerator is arranged on the substrate, the laser chip is arranged on the heat sink, and a plurality of forked heat dissipation mechanism groups are arranged on the heat sink; the heat sink includes a main body and a protrusion, and the protrusion is arranged on the main body; the plurality of forked heat dissipation mechanism groups are arranged side by side, each forked heat dissipation mechanism group includes a first forked heat dissipation mechanism and a second forked heat dissipation mechanism, the main bifurcation directions of the first forked heat dissipation mechanism and the second forked heat dissipation mechanism in each forked heat dissipation mechanism group are different, the first end of the first forked heat dissipation mechanism in each forked heat dissipation mechanism group is connected to the main body, the second end of the first forked heat dissipation mechanism in each forked heat dissipation mechanism group dissipates heat by contacting with air, the first end of the second forked heat dissipation mechanism in each forked heat dissipation mechanism group is connected to the main body, the second end of the second forked heat dissipation mechanism in each forked heat dissipation mechanism group dissipates heat by contacting with air, and the third end of the second forked heat dissipation mechanism in each forked heat dissipation mechanism group is connected to the protrusion.

2. The semiconductor laser device according to claim 1, wherein The semiconductor refrigerator comprises a first substrate, a second substrate, a third substrate, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is arranged between the first substrate and the second substrate, the second semiconductor layer is arranged between the second substrate and the third substrate, and the second substrate is arranged between the first semiconductor layer and the second semiconductor layer; The first substrate is in contact with the base, the second substrate is in contact with the main body, and the third substrate is in contact with the protrusion; The first substrate and the second substrate are both cold ends of the semiconductor refrigerator when dissipating heat.

3. The semiconductor laser device according to claim 1, wherein The surface where the raised portion contacts the second bifurcated heat dissipation mechanism is a curved surface.

4. The semiconductor laser device according to claim 1, wherein Each of the first bifurcated heat dissipation mechanism and the second bifurcated heat dissipation mechanism comprises a main bifurcated heat dissipation mechanism, a first sub-bifurcated heat dissipation mechanism and a second sub-bifurcated heat dissipation mechanism, wherein the first sub-bifurcated heat dissipation mechanism and the second sub-bifurcated heat dissipation mechanism are respectively arranged on two branches of the main bifurcated heat dissipation mechanism.

5. The semiconductor laser device according to claim 1, wherein The two first bifurcated heat dissipation mechanisms in two adjacent bifurcated heat dissipation mechanism groups are connected to each other, and the first bifurcated heat dissipation mechanism and the second bifurcated heat dissipation mechanism in each bifurcated heat dissipation mechanism group do not contact each other.

6. The semiconductor laser device according to claim 1, wherein The main body is provided with a boss, and the first bifurcated heat dissipation mechanism and the second bifurcated heat dissipation mechanism are respectively connected to the main body through one of the bosses.

7. The semiconductor laser device according to claim 1, wherein: The laser chip is disposed on a surface of the main body away from the protruding portion.

8. An electronic device, characterized in that: A semiconductor laser device comprising any one of claims 1 to 7.

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