A gas homogenizing device for semiconductor etching equipment

Abstract

The invention discloses a gas homogenizing device for semiconductor etching equipment, which relates to the technical field of semiconductor etching equipment and comprises a casing, wherein a cover is arranged on the top of the casing, a top plate is fixedly installed on the top of the cover, a plurality of second air inlets are equidistantly installed on the top of the top plate, an ionization generator is fixedly installed in the middle of the top plate, each of the second air inlets is located at the edge of the top plate, a wind circle guide rail is fixedly installed inside the casing, a sealing ring is installed on the top edge of the wind circle guide rail, and the gas homogenizing device for semiconductor etching equipment utilizes the heat generated by the bottom of the motor to be conducted to a relatively central position between the upper plate and the lower plate along the heat conducting plate, when enough heat is generated between the upper plate and the lower plate, the activity of the plasma fog group is relatively high, and the mixed gas of the plasma fog group is easy to disperse to the surroundings, thereby facilitating the plasma to pass through the lower plate evenly, thereby improving the plasma uniformity in the gas.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor etching equipment, in particular to a gas homogenizing device used for semiconductor etching equipment. Background Art

[0002] In the semiconductor manufacturing process, the etching process is a very important process. It generates high-density plasma and sends the plasma to the material to be etched through a gas homogenizer. The plasma hits the surface of the material to be etched at high speed and reacts physically and chemically with the atoms or molecules on the surface of the material, thereby achieving the effect of precise etching. In the prior art, the gas homogenizer includes a gas homogenizer disk, a chamber is formed in the gas homogenizer disk, and a plurality of gas homogenizer holes are distributed in the chamber. When the gas enters the chamber, the gas will diffuse and flow out from each gas homogenizer hole so that the gas flows evenly to the material to be etched. However, in the etching process, the plasma in the gas needs to be evenly distributed to ensure the etching quality. When the above-mentioned gas homogenizer is used, it is difficult for the gas to form a uniform mixture with the plasma in the chamber. The gas circulation is very fast. In the process of ventilation, the mesh forms a shielding surface for the plasma, resulting in that although the gas can flow out evenly, the distribution of the plasma in the gas is not uniform, resulting in reduced etching quality. For this reason, we propose a gas homogenizer for semiconductor etching equipment. Summary of the invention

[0003] The object of the present invention is to provide a gas homogenizing device for semiconductor etching equipment to solve the problems raised in the above background technology.

[0004] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a gas uniforming device for semiconductor etching equipment, comprising a casing, a sealing cover is arranged on the top of the casing, a top plate is fixedly installed on the top of the sealing cover, a plurality of second air inlets are equidistantly installed on the top of the top plate, an ionization generator is fixedly installed in the middle of the top plate, each of the second air inlets is located at the edge of the top plate, a wind circle guide rail is fixedly installed inside the casing, a sealing ring is installed on the top edge of the wind circle guide rail, a plurality of air outlet areas are provided on the outer ring of the wind circle guide rail, baffles are fixedly installed on both sides of each of the air outlet areas, one end of the baffle is against the casing, a wind wheel is rotatably connected to the inner ring of the wind circle guide rail, and a plurality of air outlet areas are provided on each of the air outlet areas. A second vent, a side sealing shell is fixedly connected to the middle part of the casing, the bottom of the side sealing shell has a receiving groove extending downward, a heat conducting plate is arranged at the bottom of the receiving groove, a plurality of lower docking interfaces are opened on the side sealing shell, a plurality of connecting pipes are fixedly connected to the bottom of the lower docking interfaces, a plurality of connecting pipes are fixedly connected to the upper plate at the bottom, a lower plate is fixedly installed on the bottom of the casing, a plurality of first air outlet pipes are arranged near the edge of the lower plate, a plurality of second air outlet pipes are arranged near the axis of the lower plate, a plurality of air outlets are opened at the bottom of the first air outlet pipe and the second air outlet pipe, the top of each of the second air outlet pipes is fitted with the heat conducting plate, and the height of the plurality of air outlets from the edge is getting smaller and smaller based on the axis of the lower plate.

[0005] Preferably, an air separation zone is formed between two adjacent air outlet zones, each of the air separation zones is surrounded by a pair of partitions, a first air inlet is provided at the corners around the casing, the first air inlet is communicated with the air separation zone through a pipeline, a plurality of drainage grooves are provided on each of the air separation zones, a first air vent is provided at one end of each of the drainage grooves, a swinging ball is provided inside the first air vent, the swinging ball is driven by gas to resist the two ends of the first air hole, and the air separation zone is connected to the inner circle of the wind circle guide rail through the first air hole.

[0006] Preferably, a plurality of guide plates are fixedly installed on the inner ring of the wind circle guide rail, a guide area is formed between two adjacent guide plates above and below, an arc-shaped flow channel is formed between two adjacent guide plates above and below, each of the guide plates is located between the second air hole and the first air hole, and a connecting groove is provided on the inner ring of the wind circle guide rail near the top of one end of each guide plate, each of the connecting grooves is located between one of the second air holes and the first air hole, and the connecting groove and the first air hole are connected to each other.

[0007] Preferably, a plurality of galvanic plates are fixedly installed on the inner ring of the wind ring guide rail between two adjacent guide plates, and an end of each galvanic plate is mounted on the middle of the surface of the galvanic plate adjacent to it to form an air outlet area. The plurality of galvanic plates are grouped in pairs to form a plurality of air outlet areas, and each air outlet area is close to the second vent.

[0008] Preferably, a bottom plate is fixedly installed at the bottom of the wind ring guide rail, a plurality of upper docking ports are opened on the bottom plate, a turbulence plate is fixedly installed at the bottom of the bottom plate, a release plate is fixedly installed at the bottom of the turbulence plate, and the bottom of the release plate and the edge sealing shell are fixedly connected together.

[0009] Preferably, the turbulence plate is provided with a plurality of expansion openings, one end of each expansion opening faces the axis of the turbulence plate, the release plate is provided with a plurality of transfer chambers in a ring shape, each transfer chamber is communicated with the expansion opening, a second gas transfer part is fixedly installed at one end inside each expansion opening, a first gas transfer part is fixedly installed at one end inside the transfer chamber, one end of each transfer chamber is connected to each lower docking port, one end of each expansion opening is connected to each upper docking port, and the ends of the first gas transfer part and the second gas transfer part form a downwardly inclined surface.

[0010] Preferably, the turbulence plate and the release plate are in surface contact for distributing the gas, and a stagnation zone is formed between each transfer chamber and the turbulence plate, and the stagnation zone extends downward and is connected to the lower docking port.

[0011] Preferably, a pair of slots are provided on both sides of the exterior of the housing, and the slots are used to connect to the bottom of the etcher.

[0012] Preferably, the bottom plane of the lower plate is made of anti-reflective material.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] During the rotation of the motor of the present invention, the wind wheel rotates, and the rotation of the wind wheel drives the plasma mist group above to be sucked into the inside of the wind wheel. Then, during the rotation of the wind wheel, the plasma mist group is driven to be centrifugally dispersed, and the plasma mist group quickly collides with the inner circle of the wind circle guide rail. This process needs to last for a period of time. The plasma mist group needs to adhere to the inner circle of the wind circle guide rail to form an ion film. After the plasma mist group consumes part of the plasma, it is discharged to the outer circle of the wind circle guide rail along the second vent hole. The heat generated by the bottom of the motor will be conducted along the heat conduction plate to a relatively central position between the upper plate and the lower plate. When enough heat is generated between the upper plate and the lower plate, the activity of the plasma mist group is relatively high, and the mixed gas of the plasma mist group is easy to disperse to the surroundings, so that the plasma can pass through the lower plate evenly, thereby improving the uniformity of the plasma in the gas.

[0015] When the airflow contacts the stagnation zone, the stagnation zone forms resistance to the gas, so that the plasma mist and the inert gas can be more fully integrated, which is convenient for the gap between the ions in the plasma mist to increase, thereby making it easier for the plasma to adhere to the first air outlet pipe and the second air outlet pipe, further facilitating the discharge of the gas. The first gas transfer section and the second gas transfer section produce viscosity to the gas, thereby preventing the airflow from being too fast, thereby preventing the wafer from being damaged during its initial processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0017] Figure 2 It is a schematic diagram of one of the internal structures of the present invention;

[0018] Figure 3 This is a schematic diagram of the disassembled structure of the bottom plate, turbulence plate and release plate of the present invention;

[0019] Figure 4 This is a schematic diagram of the cross-sectional structure of the wind ring guide rail of the present invention;

[0020] Figure 5 It is another schematic diagram of the overall internal structure of the present invention;

[0021] Figure 6 This is a schematic diagram of the wind circle guide rail and wind wheel structure of the present invention;

[0022] Figure 7 It is a schematic cross-sectional structure diagram of the bottom plate, turbulent plate and release plate of the present invention;

[0023] Figure 8 For the present invention Figure 7 A schematic diagram of the enlarged structure at A in the middle;

[0024] Fig. 9 It is a schematic plan view of the bottom plate, turbulent plate and release plate of the present invention;

[0025] Fig.10 It is a schematic diagram of the structure of the lower plate, the first air outlet pipe and the second air outlet pipe of the present invention;

[0026] Fig.11 For the present invention Fig. 9 Schematic diagram of the enlarged structure at point B in the middle.

[0027] In the figure: 1-housing; 2-cover; 3-first air inlet; 4-card slot; 5-top plate; 6-second air inlet; 7-wind wheel; 8-wind circle guide rail; 801-connecting groove; 802-drainage area; 9-sealing ring; 10-arc-shaped flow channel; 11-drainage groove; 12-air outlet area; 13-first vent hole; 14-second vent hole; 15-ionization generator; 16-bottom plate; 17-upper docking port; 18-turbulence plate; 1 9-release plate; 20-edge sealing shell; 21-upper plate; 22-connecting pipe; 23-lower plate; 24-expansion port; 25-transfer chamber; 26-lower docking port; 27-heat conduction plate; 28-drainage plate; 29-swinging ball; 30-receiving groove; 31-first gas transfer part; 32-second gas transfer part; 33-first air outlet pipe; 34-second air outlet pipe; 35-air outlet; 36-stagnation area; 37-partition; 38-coral plate. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] See also Figure 1-11The present invention provides a technical solution: a gas homogenizing device for semiconductor etching equipment, comprising a casing 1, a cover 2 is arranged on the top of the casing 1, a top plate 5 is fixedly installed on the top of the cover 2, a plurality of second air inlets 6 are equidistantly installed on the top of the top plate 5, an ionization generator 15 is fixedly installed in the middle of the top plate 5, each of the second air inlets 6 is located at the edge of the top plate 5, a wind circle guide rail 8 is fixedly installed inside the casing 1, a sealing ring 9 is installed on the top edge of the wind circle guide rail 8, a plurality of air outlet areas 12 are opened on the outer ring of the wind circle guide rail 8, a partition 37 is fixedly installed on both sides of each of the air outlet areas 12, one end of the partition 37 is against the casing 1, a wind wheel 7 is rotatably connected to the inner ring of the wind circle guide rail 8, a plurality of second air vents 14 are opened on each of the air outlet areas 12, the casing 1 An edge-sealed shell 20 is fixedly connected to the inner middle part, and a receiving groove 30 extending downward is provided at the bottom of the edge-sealed shell 20, and a heat-conducting plate 27 is arranged at the bottom of the receiving groove 30. A plurality of lower docking ports 26 are provided on the edge-sealed shell 20, and a plurality of connecting pipes 22 are fixedly connected to the bottom of the lower docking ports 26, and an upper plate 21 is fixedly connected to the bottom of the plurality of connecting pipes 22, and a lower plate 23 is fixedly installed at the bottom of the casing 1, and a plurality of first air outlet pipes 33 are provided near the edge of the lower plate 23, and a plurality of second air outlet pipes 34 are provided near the axis of the lower plate 23, and a plurality of air outlets 35 are provided at the bottom of the first air outlet pipe 33 and the second air outlet pipe 34, and a plurality of air outlets 35 are provided at the bottom, and the top of each of the second air outlet pipes 34 is in contact with the heat-conducting plate 27, and the height of the plurality of air outlets 35 from the edge is smaller and smaller based on the axis of the lower plate 23;The bottom plane of the lower plate 23 is made of anti-reflective material. First, the device is installed under the etcher, and the motor is installed in the receiving groove 30. The shaft of the motor is directly connected to the wind wheel 7. Then, the lower plate 23 is aligned with the top of the wafer. Then, the second air inlet 6 is connected to the pipeline with compressed gas. When the device starts to process the wafer, the ionizer 15 is energized, and ionization is generated in the cover 2 to form a plasma mist. Under the push of the compressed gas, the plasma mist sinks to the vicinity of the wind wheel 7, and then the motor is turned on to rotate. When the motor rotates, the wind wheel 7 rotates. The rotation of the wind wheel 7 drives the plasma mist above to be sucked into the inside of the wind wheel 7. Then, during the rotation of the wind wheel 7, the plasma mist is driven to be centrifugally dispersed. The plasma mist quickly The plasma mist group needs to be attached to the inner circle of the wind circle guide rail 8 to form an ion coating. After the plasma mist group consumes part of the plasma, it is discharged to the outer circle of the wind circle guide rail 8 along the second vent hole 14, and then discharged to the connecting pipe 22 along the lower docking port 26 under high pressure. The connecting pipe 22 discharges the plasma mixed gas between the upper plate 21 and the lower plate 23. The connecting pipe 22 is close to the edge of the upper plate 21. The gas first contacts the first air outlet pipe 33. Since the opening of the air outlet 35 at the bottom of the first air outlet pipe 33 is smaller than that of the second air outlet pipe 34, the gas discharged along the connecting pipe 22 will be discharged first in the first air outlet pipe 33. Another part of the gas passes over the first air outlet pipe 33 and diffuses to the surrounding of the second air outlet pipe 34. The remaining gas between the upper plate 21 and the lower plate 23 is discharged along the air outlet 35 at the bottom of the second air outlet pipe 34 through high pressure.

[0030] It is worth noting that the device needs to be used without load for a period of time. On the one hand, the heat generated at the bottom of the motor will be conducted along the heat conducting plate 27 to a relatively central position between the upper plate 21 and the lower plate 23. When enough heat is generated between the upper plate 21 and the lower plate 23, the plasma mist is relatively active, and the plasma mist mixed gas is easy to disperse to the surroundings, thereby facilitating the plasma to pass evenly through the lower plate 23 and improve the uniformity of the plasma in the gas. On the other hand, the plasma mist needs to contact the internal structure of the device, and the internal structure of the device contacts the plasma again, and the positive and negative ions combine to form electrons. The plasma mist needs to coat the device before plasma can be used to process wafers.

[0031] As a further preferred embodiment, an air separation zone is formed between two adjacent air outlet zones 12, each of the air separation zones is surrounded by a pair of partitions 37, first air inlets 3 are provided at the corners of the casing 1, the first air inlet 3 is communicated with the air separation zone through a pipeline, the wind circle guide rail 8 is provided with a plurality of drainage grooves 11 on each of the air separation zones, an arc-shaped flow channel 10 is formed between the upper and lower adjacent drainage plates 28, a first air vent 13 is provided at one end of each of the drainage grooves 11, a swinging ball 29 is provided inside the first air vent 13, the swinging ball 29 is driven by gas and the first air vent 13 at both ends The air distribution area is connected to the inner circle of the wind circle guide rail 8 through the first air vent 13. A plurality of guide plates 28 are fixedly installed on the inner circle of the wind circle guide rail 8. A guide area 802 is formed between the upper and lower adjacent guide plates 28. Each of the guide plates 28 is located between the second air vent 14 and the first air vent 13. The inner circle of the wind circle guide rail 8 is provided with a connecting groove 801 near the upper side of one end of each guide plate 28. Each of the connecting grooves 801 is located between one of the second air vents 14 and the first air vent 13. The connecting grooves 801 and the first air vent 13 are connected to each other. During processing, each first air inlet A sufficient amount of inert gas is introduced into the inlet 3. The inert gas will not react with ions, but can emulsify the plasma mist and improve the penetration of the plasma mist, such as silicon-based gases such as silane and ammonia. After the plasma mist is centrifugally dispersed to the outlet area 12, the plasma mist passes through the second air vent 14, and the inert gas is discharged to the vicinity of the arc-shaped flow channel 10 through the first air inlet 3. When the air pressure in the inner circle of the wind circle guide rail 8 is greater than that in the outer circle, the gas first passes through the first air vent 13 and contacts the swing ball 29. The swing ball 29 blocks one end of the first air vent 13, and the gas is discharged through the second air vent 14. It is suitable for the initial stage. Wafer processing is convenient for plasma mist coating. When the air pressure in the inner circle of the wind circle guide 8 is lower than that in the outer circle during mid-term processing, the inert gas in the outer circle of the wind circle guide 8 passes through the first air hole 13 and contacts the swing ball 29. The swing ball 29 blocks the other end of the first air hole 13. The inert gas in the outer circle of the wind circle guide 8 is directly discharged into the connecting pipe 22 and contacts the plasma mist, which is beneficial to squeezing the plasma mist. When the air pressure in the inner circle of the wind circle guide 8 is equal to that in the outer circle during late processing, the inert gas in the outer circle of the wind circle guide 8 blends with the compressed air, which can change the air pressure to improve the uniformity of gas outlet and improve the processing quality of the wafer.

[0032] As a further preferred embodiment, a plurality of slats 38 are fixedly installed on the inner circle of the wind circle guide rail 8 between two adjacent guide plates 28, and the end of each slat 38 is mounted on the middle of the surface of the adjacent slat 38 to form an air outlet area. The plurality of slats 38 are grouped in pairs to form a plurality of air outlet areas, and each of the air outlet areas is close to the second vent 14; a bottom plate 16 is fixedly installed on the bottom of the wind circle guide rail 8, and a plurality of upper docking ports 17 are provided on the bottom of the bottom plate 16, a turbulence plate 18 is fixedly installed on the bottom of the bottom plate 16, and a release plate 19 is fixedly installed on the bottom of the turbulence plate 18, and the bottom of the release plate 19 is fixedly connected to the edge sealing shell 20, and the plurality of slats 38 can disperse the plasma mist in advance, and when the inert gas and the compressed gas are in contact with the plasma mist respectively, they are discharged into the turbulence plate 18 through the upper docking ports 17 respectively, and then flow into the release plate 19 through the turbulence plate 18;

[0033] As a specific implementation of the preferred embodiment of the previous step, the turbulence plate 18 is provided with a plurality of expansion openings 24, and one end of each expansion opening 24 faces the axis of the turbulence plate 18. The release plate 19 is provided with a plurality of transfer chambers 25 in a ring shape, and each transfer chamber 25 is communicated with the expansion opening 24. A second gas transfer part 32 is fixedly installed at one end inside each expansion opening 24, and a first gas transfer part 31 is fixedly installed at one end inside the transfer chamber 25. One end of each transfer chamber 25 is connected to each lower docking port 26, and one end of each expansion opening 24 is connected to each upper docking port 17. The ends of the first gas transfer part 31 and the second gas transfer part 32 form an inclined surface downwardly; the surface contact between the turbulence plate 18 and the release plate 19 is used to distribute the gas, and each transfer chamber 25 and the turbulence plate 18 are formed between A stagnation zone 36 is formed, and the stagnation zone 36 extends downward and is connected to the lower docking port 26. When the above-mentioned gas is discharged to the expansion port 24 along the upper docking port 17, the gas is discharged to the inside of the transfer chamber 25 along the second gas transfer part 32 through pressure. In this process, the gas is discharged again through the first gas transfer part 31. When the airflow contacts the stagnation zone 36, the stagnation zone 36 forms resistance to the gas, so that the plasma mist and the inert gas are more fully integrated, which facilitates the increase of the gap between the ions in the plasma mist, thereby making it more convenient for the plasma to adhere to the first air outlet pipe 33 and the second air outlet pipe 34, which is further beneficial to the discharge of the gas. The first gas transfer part 31 and the second gas transfer part 32 produce viscosity to the gas, thereby preventing the airflow velocity from being too high, thereby preventing the wafer from being damaged during the initial processing of the wafer.

[0034] A pair of slots 4 are provided on both sides of the exterior of the housing 1 , and the slots 4 are used to connect to the bottom of the etching machine for easy connection.

[0035] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0036] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A gas homogenizing device for semiconductor etching equipment, comprising a housing (1), characterized in that: The housing (1) is provided with a cover (2) at the top, a top plate (5) is fixedly mounted on the top of the cover (2), a plurality of second air inlets (6) are equidistantly mounted on the top of the top plate (5), an ionization generator (15) is fixedly mounted in the middle of the top plate (5), each of the second air inlets (6) is located at the edge of the top plate (5), a wind circle guide rail (8) is fixedly mounted inside the housing (1), a sealing ring (9) is mounted on the top edge of the wind circle guide rail (8), a plurality of air outlet areas (12) are formed on the outer ring of the wind circle guide rail (8), a partition plate (37) is fixedly mounted on both sides of each of the air outlet areas (12), and the partition plate (37) is fixedly mounted on the outer ring of the wind circle guide rail (8). One end of the plate (37) abuts against the casing (1); the inner ring of the wind circle guide rail (8) is rotatably connected to a wind wheel (7); a plurality of second vent holes (14) are provided on each of the air outlet areas (12); an edge sealing shell (20) is fixedly connected to the middle of the casing (1); the bottom of the edge sealing shell (20) has a receiving groove (30) extending downward; a heat conducting plate (27) is provided at the bottom of the receiving groove (30); a plurality of lower docking ports (26) are provided on the edge sealing shell (20); a plurality of connecting pipes (22) are fixedly connected to the bottom of the lower docking ports (26); and the bottoms of the plurality of connecting pipes (22) are fixedly connected to the upper plate (21); A lower plate (23) is fixedly mounted on the bottom of the housing (1); a plurality of first air outlet pipes (33) are arranged near the edge of the lower plate (23); a plurality of second air outlet pipes (34) are arranged near the axis of the lower plate (23); a plurality of air outlet ports (35) are provided at the bottom of each of the first air outlet pipes (33) and the second air outlet pipes (34); the top of each of the second air outlet pipes (34) is in contact with the heat conduction plate (27); and the height of the plurality of air outlet ports (35) from the edge is gradually reduced based on the axis of the lower plate (23).

2. A gas homogenizing device for semiconductor etching equipment according to claim 1, characterized in that: An air separation zone is formed between two adjacent air outlet zones (12), each of the air separation zones being surrounded by a pair of partitions (37). First air inlets (3) are provided at the corners of the casing (1), the first air inlets (3) being connected to the air separation zone through a pipeline, the wind circle guide rail (8) being provided with a plurality of drainage grooves (11) on each of the air separation zones, each of the drainage grooves (11) being provided with a first air vent (13) at one end, a swinging ball (29) being provided inside the first air vent (13), the swinging ball (29) being driven by gas to abut against both ends of the first air vent (13), and the air separation zone being connected via the first air vent (13) and the inner circle of the wind circle guide rail (8).

3. A gas homogenizing device for semiconductor etching equipment according to claim 2, characterized in that: A plurality of guide plates (28) are fixedly mounted on the inner ring of the wind ring guide rail (8); an arc-shaped flow channel (10) is formed between two adjacent guide plates (28) above and below; a guide area (802) is formed between two adjacent guide plates (28) above and below; each guide plate (28) is located between the second vent hole (14) and the first vent hole (13); a connecting groove (801) is provided on the inner ring of the wind ring guide rail (8) near the upper side of one end of each guide plate (28); each connecting groove (801) is located between one of the second vent holes (14) and the first vent hole (13); and the connecting groove (801) and the first vent hole (13) are connected to each other.

4. A gas homogenizing device for semiconductor etching equipment according to claim 3, characterized in that: A plurality of slats (38) are fixedly mounted on the inner ring of the wind ring guide rail (8) between two adjacent guide plates (28), with the end of each slat (38) being mounted on the middle of the surface of the adjacent slat (38) to form an air outlet area. The plurality of slats (38) are grouped in pairs to form a plurality of air outlet areas, and each of the air outlet areas is close to the second vent hole (14).

5. The gas homogenizing device for semiconductor etching equipment according to claim 1, characterized in that: A bottom plate (16) is fixedly mounted on the bottom of the wind ring guide rail (8), a plurality of upper docking ports (17) are provided on the bottom plate (16), a turbulence plate (18) is fixedly mounted on the bottom of the bottom plate (16), a release plate (19) is fixedly mounted on the bottom of the turbulence plate (18), and the bottom of the release plate (19) is fixedly connected to the edge sealing shell (20).

6. A gas homogenizing device for semiconductor etching equipment according to claim 5, characterized in that: The turbulence plate (18) is provided with a plurality of expansion openings (24), one end of each expansion opening (24) faces the axis of the turbulence plate (18); the release plate (19) is provided with a plurality of transfer chambers (25) in an annular shape, each transfer chamber (25) is communicated with the expansion opening (24); a second gas transfer part (32) is fixedly installed at one end inside each expansion opening (24); a first gas transfer part (31) is fixedly installed at one end inside the transfer chamber (25); one end of each transfer chamber (25) is connected to each lower docking port (26); one end of each expansion opening (24) is connected to each upper docking port (17); and the ends of the first gas transfer part (31) and the second gas transfer part (32) form an inclined surface facing downward.

7. A gas homogenizing device for semiconductor etching equipment according to claim 6, characterized in that: The turbulence plate (18) and the release plate (19) are in surface contact with each other for distributing the gas. A stagnation zone (36) is formed between each transfer chamber (25) and the turbulence plate (18), and the stagnation zone (36) extends downward and is connected to the lower docking port (26).

8. The gas homogenizing device for semiconductor etching equipment according to claim 1, characterized in that: A pair of slots (4) are provided on both sides of the exterior of the housing (1), and the slots (4) are used to connect to the bottom of the etching machine.

9. The gas homogenizing device for semiconductor etching equipment according to claim 1, characterized in that: The bottom plane of the lower plate (23) is made of anti-reflective material.

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