Vacuum carrier and manufacturing method thereof and semiconductor processing technology

Abstract

The present application discloses a vacuum carrier, a manufacturing method thereof and a semiconductor processing technology, and relates to the field of semiconductor technology. The vacuum carrier provided by the present application has an adsorption surface for contacting a wafer, and adsorption areas and grooves are sequentially arranged on the adsorption surface from the center to the outside in a radial direction, the grooves surround the adsorption area, and a number of suction holes are distributed at intervals in the adsorption area. When the vacuum carrier adsorbs the wafer for cleaning, the grooves can play a liquid sealing effect to prevent the cleaning agent from penetrating into the adsorption area, thereby preventing the main area in the middle of the wafer from being contaminated by the cleaning agent, thereby improving the surface quality of the side of the wafer contacting the vacuum carrier, and can also reduce the cleaning process of the side of the wafer contacting the vacuum carrier. The manufacturing method provided by the present application can be used to manufacture the above-mentioned vacuum carrier. The semiconductor processing technology provided by the present application includes using the above-mentioned vacuum carrier to adsorb wafers for debonding and cleaning.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a vacuum carrier and a manufacturing method thereof and a semiconductor processing technology. Background Art

[0002] In the semiconductor field, temporary bonding (usually using temporary bonding wax or bonding glue) is usually used to connect the wafer to the substrate, and the substrate is used as a carrier to facilitate the subsequent thinning of the wafer. After the thinning is completed, the wafer needs to be debonded from the substrate and the organic bonding residues on the surface of the wafer need to be cleaned. The surface quality of the wafer needs to meet the requirements of subsequent processing. For example, for high-power optoelectronic chips, a layer of electrode will be evaporated on the surface of the wafer after thinning, so the surface quality requirements are high. In the related art, when the wafer and the substrate are debonded, the back of the wafer (that is, the thinned surface) is adsorbed by a vacuum carrier, and the wafer is dragged away from the substrate after the bonding force between the wafer and the substrate is weakened. After that, the wafer enters the wafer cleaning process together with the vacuum carrier to clean the bonding surface on the wafer. However, during the cleaning process, the cleaning agent (such as an organic solution) is easy to enter between the wafer and the vacuum carrier and remain, which in turn causes contamination of the back of the wafer and the surface of the vacuum carrier. Contamination of the back side of the wafer will have an adverse effect on subsequent processes. Adding a cleaning process to the back side of the wafer not only increases the process cost, but also easily leads to secondary contamination of the front side of the wafer. Summary of the invention

[0003] The purpose of the present application includes providing a vacuum carrier and a manufacturing method thereof and a semiconductor processing technology, wherein the vacuum carrier can better absorb wafers and alleviate the problem of wafer contamination caused by the cleaning agent entering between the wafer and the vacuum carrier.

[0004] The embodiments of the present application can be implemented as follows:

[0005] In a first aspect, the present application provides a vacuum carrier, which includes a carrier body for adsorbing wafers, the carrier body having an adsorption surface for contacting the wafers, and adsorption areas and grooves are arranged in sequence from the center to the outside in a radial direction on the adsorption surface, the grooves surround the adsorption area, and a number of suction holes are spaced apart in the adsorption area.

[0006] In an optional embodiment, the adsorption area includes a first adsorption area and a second adsorption area, the second adsorption area surrounds the outer periphery of the first adsorption area, the groove surrounds the outer periphery of the second adsorption area, a plurality of first adsorption holes are spaced apart on the first adsorption area, a plurality of second adsorption holes are spaced apart on the second adsorption area, and the aperture of the first adsorption hole is larger than the aperture of the second adsorption hole.

[0007] In an optional embodiment, the aperture of the first suction hole is 500-1000 μm;

[0008] And / or, the aperture of the second suction hole is 200-500 μm.

[0009] In an optional embodiment, the distribution density of the second suction holes in the second adsorption area is greater than the distribution density of the first suction holes in the first adsorption area.

[0010] In an optional embodiment, a first planar area and a second planar area are further provided on the adsorption surface, the first planar area surrounds the second adsorption area and is provided between the second adsorption area and the groove, and the second planar area surrounds the groove and is provided between the edge of the vacuum carrier and the groove.

[0011] In an optional embodiment, one section of the groove in its extending direction is a straight line section.

[0012] In an optional embodiment, the width of the second planar area in the radial direction is 1-3 mm.

[0013] In an optional embodiment, the width of the groove is 1-3 mm, and the depth of the groove is 100-300 μm.

[0014] In an optional embodiment, the vacuum carrier is made of one of aluminum nitride, silicon carbide crystal, beryllium oxide, and diamond.

[0015] In an optional embodiment, the surface roughness of the adsorption surface is less than 50 nm.

[0016] In a second aspect, the present application provides a method for manufacturing a vacuum carrier, comprising:

[0017] Providing a substrate having a processing plane, and setting an adsorption area on the processing plane;

[0018] A suction hole is provided in the adsorption area, and a groove surrounding the adsorption area is provided on the periphery of the adsorption area;

[0019] Polish the machined surface to obtain an adsorption surface.

[0020] In a third aspect, the present application provides a semiconductor processing technology, using the vacuum carrier of any one of the first aspects above, the semiconductor processing technology comprising:

[0021] Providing a substrate and a wafer, wherein the wafer comprises a substrate and an epitaxial layer, and the epitaxial layer is bonded to the substrate;

[0022] Adsorbing the vacuum carrier onto the side of the wafer facing away from the substrate;

[0023] Debonding the epitaxial layer from the substrate and separating the wafer from the substrate on the vacuum carrier;

[0024] Clean the bonding surface between the epitaxial layer and the substrate.

[0025] In an optional embodiment, the step of cleaning the bonding surface of the epitaxial layer includes:

[0026] Acetone, isopropyl alcohol and water are used to spray the bonding surface of the epitaxial layer in sequence, and the wafer is rotated during the spraying of the bonding surface.

[0027] In an optional embodiment, the semiconductor processing technology further includes:

[0028] The wafer is separated from the vacuum carrier and the vacuum carrier is soak cleaned.

[0029] In an optional embodiment, the step of immersion cleaning the vacuum carrier includes:

[0030] The vacuum carrier was soaked in acetone, isopropyl alcohol and water in sequence.

[0031] In an optional embodiment, the step of debonding the epitaxial layer from the substrate and separating the wafer carried by the vacuum carrier from the substrate comprises:

[0032] Use a heated adsorption plate to adsorb the side of the substrate away from the wafer;

[0033] Controlling the heated adsorption plate to heat the substrate;

[0034] The vacuum carrier and the heated adsorption plate are moved away from each other to separate the epitaxial layer from the substrate.

[0035] The beneficial effects of the embodiments of the present application include, for example:

[0036] The vacuum carrier provided by the present application includes a carrier body for adsorbing wafers, and the carrier body has an adsorption surface for contacting the wafer, and an adsorption area and a groove are arranged on the adsorption surface in sequence from the center to the outside in the radial direction, and the groove surrounds the adsorption area, and a plurality of suction holes are distributed at intervals in the adsorption area. After the vacuum carrier is mounted on the vacuum equipment, the suction holes can provide negative pressure to adsorb the wafer on the adsorption surface of the vacuum carrier. When the vacuum carrier carries the wafer for cleaning, even if the cleaning agent penetrates from the edge of the wafer to the wafer and the vacuum carrier, it can only penetrate into the groove for temporary storage, and the groove can play a liquid sealing effect to prevent the cleaning agent from further penetrating into the adsorption area, so that the main area in the middle of the wafer can be prevented from being contaminated by the cleaning agent, thereby improving the surface quality of the side of the wafer contacting the vacuum carrier, so it can also reduce the cleaning process of the side of the wafer contacting the vacuum carrier. In addition, the adsorption area of ​​the vacuum carrier can also be kept clean. The manufacturing method provided in the embodiment of the present application can be used to manufacture the above-mentioned vacuum carrier.

[0037] The semiconductor processing technology provided in the embodiment of the present application includes using the above-mentioned vacuum carrier to adsorb the wafer for debonding and cleaning, which can improve the problem of wafer contamination by cleaning agents and improve the surface quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0039] Figure 1 A schematic diagram of a vacuum carrier in one embodiment of the present application;

[0040] Figure 2 This is a schematic diagram of a vacuum carrier adsorbing a wafer in one embodiment of the present application;

[0041] Figure 3 This is a flow chart of a method for manufacturing a vacuum carrier in one embodiment of the present application;

[0042] Figure 4 This is a flow chart of a semiconductor processing process in one embodiment of the present application;

[0043] Figure 5 This is a schematic diagram of a substrate after bonding to an epitaxial layer of a wafer in one embodiment of the present application;

[0044] Figure 6 A schematic diagram of a vacuum carrier adsorbed on a contact surface of a wafer in an embodiment of the present application;

[0045] Figure 7 This is a schematic diagram of a heating adsorption plate being adsorbed on a substrate in one embodiment of the present application;

[0046] Figure 8 This is a schematic diagram of separation of an epitaxial layer and a substrate in one embodiment of the present application;

[0047] Fig. 9 It is a schematic diagram of cleaning the bonding surface of the epitaxial layer in one embodiment of the present application.

[0048] Icons: 100 - vacuum carrier; 110 - first adsorption area; 111 - first suction hole; 120 - second adsorption area; 121 - second suction hole; 130 - first plane area; 140 - groove; 141 - straight line segment; 150 - second plane area; 200 - wafer; 201 - substrate; 210 - epitaxial layer; 300 - base plate; 400 - heated adsorption plate; 500 - vacuum base; 510 - rotating shaft. DETAILED DESCRIPTION

[0049] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0051] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0052] In the description of the present application, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, it is based on the orientation or position relationship shown in the drawings, or is the orientation or position relationship in which the product of the invention is usually placed when used. It is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0053] In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.

[0054] It should be noted that, in the absence of conflict, the features in the embodiments of the present application may be combined with each other.

[0055] When the vacuum carrier in the related art adsorbs the wafer after debonding and cleans the wafer bonding surface, the cleaning agent easily penetrates between the wafer and the vacuum carrier, causing contamination of the wafer surface and affecting the surface quality. If the process of cleaning the wafer contact surface (i.e. the side of the wafer contacting the vacuum carrier) is added, not only will the process increase, but it may also cause secondary contamination of the wafer bonding surface. After the cleaning agent penetrates between the vacuum carrier and the wafer, the adsorption surface of the vacuum carrier will also be contaminated, causing it to contaminate the wafer when it subsequently adsorbs other wafers. In addition, the vacuum carrier in the related art is usually a microporous ceramic disk (SiC powder and polymer sintered), and its adsorption surface is relatively rough (with a microscopic morphology greater than 5μm), which can easily cause indentations or scratches on the wafer contact surface when adsorbing the wafer; and the ceramic powder and adhesive contained in the vacuum carrier material in the related art have the risk of falling off, and after adhering to the wafer, it is difficult to remove, which will affect the surface quality of the wafer; when the adsorption surface of the vacuum carrier is contaminated, due to the characteristics of microporous ceramics, it is difficult to clean, which will continue to affect subsequent wafers. In addition, the microporous ceramic vacuum carrier in the related art is expensive and has a high cost.

[0056] In order to improve at least one of the shortcomings of the vacuum carrier in the related art, the embodiment of the present application provides a vacuum carrier and a method for manufacturing the same. In addition, the embodiment of the present application also provides a semiconductor processing technology using the vacuum carrier.

[0057] Figure 1 This is a schematic diagram of a vacuum carrier 100 in one embodiment of the present application; Figure 2 FIG. 1 is a schematic diagram of a vacuum carrier 100 adsorbing a wafer 200 in an embodiment of the present application. Figure 1 and Figure 2 As shown, the vacuum carrier 100 provided in the embodiment of the present application includes a carrier body for adsorbing the wafer 200, and the carrier body has an adsorption surface for contacting the wafer 200, that is, when the vacuum carrier 100 adsorbs the wafer 200, the adsorption surface abuts against the surface of the wafer 200. Adsorption areas and grooves 140 are sequentially arranged on the adsorption surface from the inside to the outside in the radial direction, the grooves 140 surround the adsorption area, and a number of suction holes are distributed in the adsorption area at intervals. When the vacuum carrier 100 is mounted in a vacuum device, the suction holes can generate negative pressure to adsorb the wafer 200 on the adsorption surface, thereby realizing the carrying and transfer of the wafer 200.

[0058] In the embodiment of the present application, during the process of cleaning the wafer 200 carried by the vacuum carrier 100, even if the cleaning agent penetrates from the edge of the wafer 200 to the space between the wafer 200 and the vacuum carrier 100, it can only penetrate to the groove 140 for temporary storage. The groove 140 can play a liquid sealing effect to prevent the cleaning agent from further penetrating into the adsorption area, so that the main area in the middle of the wafer 200 can be prevented from being contaminated by the cleaning agent, thereby improving the surface quality of the side of the wafer 200 that contacts the vacuum carrier 100, so that the cleaning process for the side of the wafer 200 that contacts the vacuum carrier 100 can also be reduced. In addition, the adsorption area of ​​the vacuum carrier 100 can also be kept clean and will not contaminate the subsequent wafer 200.

[0059] Specifically in the present embodiment, the adsorption area includes a first adsorption area 110 and a second adsorption area 120. The second adsorption area 120 surrounds the outer periphery of the first adsorption area 110. The groove 140 surrounds the outer periphery of the second adsorption area 120. A plurality of first adsorption holes 111 are spaced apart on the first adsorption area 110. A plurality of second adsorption holes 121 are spaced apart on the second adsorption area 120. The aperture of the first adsorption hole 111 is larger than the aperture of the second adsorption hole 121.

[0060] Furthermore, the adsorption surface is also provided with a first plane area 130 and a second plane area 150, the first plane area 130 surrounds the second adsorption area 120 and is provided between the second adsorption area 120 and the groove 140, and the second plane area 150 surrounds the groove 140 and is provided between the edge of the vacuum carrier 100 and the groove 140. In other words, the first adsorption area 110, the second adsorption area 120, the first plane area 130, the groove 140 and the second plane area 150 are arranged in sequence from inside to outside along the radial direction. For ease of understanding, Figure 1 Two dotted circles are shown as boundaries between the first adsorption area 110 , the second adsorption area 120 and the first plane area 130 .

[0061] In the present embodiment, the vacuum carrier 100 is circular, and the first adsorption area 110 , the second adsorption area 120 , the first planar area 130 , the groove 140 , and the second planar area 150 are all concentric with the vacuum carrier 100 .

[0062] In the present embodiment, since the first suction hole 111 is larger than the second suction hole 121, the first adsorption area 110 can provide a greater adsorption force. However, the larger the aperture of the suction hole, the worse the support uniformity of the vacuum carrier 100, and the strong adsorption force may have a negative impact on the surface flatness of the wafer 200. Therefore, in the present embodiment, the second adsorption area 120 is arranged on the periphery of the first adsorption area 110, and the aperture of the second suction hole 121 in the second adsorption area 120 is made smaller than the aperture of the first suction hole 111 in the first adsorption area 110, so that the second adsorption area 120 can be well fitted with the surface of the wafer 200 to avoid vacuum leakage. By combining the first adsorption area 110 and the second adsorption area 120, it is possible to ensure the adsorption force of the vacuum carrier 100, and also ensure uniform support, and ensure that the wafer 200 has a better flatness.

[0063] Optionally, the aperture of the first suction hole 111 is 500-1000 μm, and the aperture of the second suction hole 121 is 200-500 μm.

[0064] Furthermore, the distribution density of the second suction holes 121 in the second adsorption area 120 is greater than the distribution density of the first suction holes 111 in the first adsorption area 110, so that the second adsorption area 120 can also maintain a better adsorption force, so that the wafer 200 is closely attached to the second adsorption area 120. Optionally, the distribution density of the second suction holes 121 in the second adsorption area 120 is 2 to 3 times the distribution density of the first suction holes 111 in the first adsorption area 110. It should be understood that the distribution density of the first suction holes 111 in the first adsorption area 110 is the number of the first suction holes 111 per unit area of ​​the first adsorption area 110; the distribution density of the second suction holes 121 in the second adsorption area 120 is the number of the second suction holes 121 per unit area of ​​the second adsorption area 120.

[0065] Furthermore, the first suction holes 111 and the second suction holes 121 may be distributed in a circular array, a rectangular array, or other interval distributions.

[0066] Optionally, the thickness of the vacuum carrier 100 is 0.75~1.5mm. In the present embodiment, the material of the vacuum carrier 100 is aluminum nitride (AlN). Compared with the powder sintered microporous ceramics in the prior art, the aluminum nitride material itself does not produce powder and organic matter, and has strong corrosion resistance and is easy to clean. Compared with the vacuum carrier of microporous ceramics, the adsorption surface of the vacuum carrier 100 of aluminum nitride material can be processed smoother, and it is not easy to produce indentations and scratches on the wafer 200, thereby improving the surface quality of the wafer 200 and reducing the risk of fragmentation; the smooth adsorption surface is also not easy to retain contaminants. Optionally, the surface roughness of the adsorption surface of the vacuum carrier 100 of the present embodiment is less than 50nm.

[0067] In addition, the vacuum carrier 100 made of aluminum nitride is semi-transparent, which is convenient for alignment with the wafer 200; the cost of the aluminum nitride material itself is also relatively low.

[0068] It should be understood that in other optional embodiments, the vacuum carrier 100 may also be made of other materials such as silicon carbide crystal, beryllium oxide, diamond, etc.

[0069] In the embodiment of the present application, the diameter of the vacuum carrier 100 can be designed according to the wafer 200 to be adsorbed, and should be slightly larger than the diameter of the wafer 200 (specifically, it can be 0.1-0.2 inches larger), and the outer diameter of the groove 140 should be smaller than the diameter of the wafer 200. Preferably, the diameter of the wafer 200 is 1mm-3mm larger than the outer diameter of the groove 140. In this way, when the wafer 200 is adsorbed on the vacuum carrier 100 and is concentric with the vacuum carrier 100, the wafer 200 can completely cover the groove 140, and the edge of the wafer 200 is pressed against the second plane area 150. In this way, the groove 140 can play a better liquid sealing effect, and during the cleaning process of the wafer 200, the cleaning agent can be prevented from penetrating into the adsorption area and contaminating the contact surface of the wafer 200 and the middle area of ​​the adsorption surface of the vacuum carrier 100.

[0070] In this embodiment, the depth direction of the groove 140 is consistent with the thickness direction of the carrier body; in other embodiments, the depth direction of the groove 140 may also be inclined to the thickness direction of the carrier body. Optionally, the width of the groove 140 is 1-3 mm; the depth of the groove 140 is 100-300 μm.

[0071] In this embodiment, one section of the groove 140 in its extension direction is a straight line segment 141. In this embodiment, the groove 140 other than the straight line segment 141 is an arc segment, and the center angle of the arc segment is greater than 180°. When the vacuum carrier 100 is used to absorb the wafer 200, the straight edge of the wafer 200 can be made parallel to the straight line segment 141 of the groove 140, so that the wafer 200 can be accurately aligned.

[0072] Furthermore, the radial width of the second plane area 150 is 1-3 mm. The radial dimensions of the first adsorption area 110 , the second adsorption area 120 and the first plane area 130 can be adjusted as needed, so that the vacuum carrier 100 has both adsorption stability and adhesion to the wafer 200 .

[0073] Figure 3 FIG. 1 is a flow chart of a method for manufacturing a vacuum carrier in one embodiment of the present application. Figure 3 As shown, the embodiment of the present application provides a method for manufacturing a vacuum carrier, which can be used to manufacture the vacuum carrier 100 provided in the embodiment of the present application. The method for manufacturing the vacuum carrier includes the following steps:

[0074] Step S10, providing a substrate having a processing plane, and setting an adsorption area on the processing plane.

[0075] Taking the manufacture of the vacuum carrier 100 provided in the above embodiment of the present application as an example, the material of the substrate can be selected as AlN, and the processing plane is the flat surface to be processed into the adsorption surface. The adsorption area may include a first adsorption area 110 and a second adsorption area 120, and a first plane area 130 and a second plane area 150 may also be set on the processing plane. An area for subsequently opening the groove 140 should be reserved between the first plane area 130 and the second plane area 150. The positions and sizes of the above-mentioned features such as the first adsorption area 110, the second adsorption area 120, the first plane area 130 and the second plane area 150 can be set according to the specific introduction of the vacuum carrier 100 in the above embodiment.

[0076] In step S20, a suction hole is formed in the suction area, and a groove 140 surrounding the suction area is formed on the periphery of the suction area.

[0077] In the embodiment of the present application, the step of opening a suction hole in the adsorption area specifically includes opening a first suction hole 111 in the first adsorption area 110 and opening a second suction hole 121 in the second adsorption area 120. During the hole opening process, it is necessary to control the energy of the hole opening to avoid causing cracks; specifically, the suction hole can be opened by laser. The aperture of the first suction hole 111 is controlled to be 500~1000μm, the aperture of the second suction hole 121 is controlled to be 200~500μm, the width of the groove 140 is controlled to be 1~3mm, and the depth is controlled to be 100~300μm.

[0078] Step S30, polishing the processed plane to obtain an adsorption surface.

[0079] In the embodiment of the present application, after the suction holes and grooves 140 are made, the suction surface can be polished to have a lower roughness, thereby avoiding damage to the contact surface of the wafer 200. Specifically, the roughness of the suction surface can be controlled to be equivalent to or lower than the surface roughness of the wafer 200; specifically, the roughness of the suction surface is controlled to be less than 50nm.

[0080] Furthermore, the method for manufacturing the vacuum carrier may further include organic cleaning of the adsorption surface. Specifically, acetone, isopropanol and water (optionally deionized water) may be used to clean the adsorption surface in sequence. Acetone and isopropanol can effectively dissolve pollutants on the substrate.

[0081] After cleaning the substrate, the substrate may be further baked to finally obtain the vacuum carrier 100 of the embodiment of the present application. Optionally, the baking temperature is 150-200° C. and the baking time is 10-30 minutes.

[0082] Figure 41 is a flow chart of a semiconductor processing process in one embodiment of the present application. The semiconductor processing process provided in the embodiment of the present application uses the vacuum carrier 100 provided in the above embodiment. Figure 4 As shown, the semiconductor processing technology provided by the embodiment of the present application includes:

[0083] Step S100 , providing a substrate 300 and a wafer 200 , wherein the wafer 200 includes a substrate 201 and an epitaxial layer 210 , and the epitaxial layer 210 is bonded to the substrate 300 .

[0084] Figure 5 FIG. 2 is a schematic diagram of a substrate 300 and an epitaxial layer 210 of a wafer 200 after bonding in an embodiment of the present application. Figure 5 As shown, in the embodiment of the present application, the wafer includes a substrate 201 and an epitaxial layer 210 disposed on the surface of the substrate 201. The epitaxial layer 210 of the wafer 200 and the substrate 300 are bonded together due to the processing needs of the wafer 200. For example, in order to thin the back side of the substrate 201 (i.e., the side without the epitaxial layer 210), the epitaxial layer 210 of the wafer 200 needs to be bonded to the substrate 300, and the substrate 300 is used to carry the wafer 200 so as to perform thinning processing on the back side of the substrate 201. Bonding wax or bonding glue can be used to achieve bonding between the epitaxial layer 210 and the substrate 300.

[0085] In order to improve the heating effect in the subsequent debonding process, the substrate 300 can be made of a material with a high thermal conductivity, such as AlN material, silicon carbide crystal, beryllium oxide, diamond, etc. In this way, the substrate 300 can more easily transfer heat to the bonding surface of the epitaxial layer 210 for debonding.

[0086] In step S200 , the vacuum carrier 100 is adsorbed onto a side of the wafer 200 facing away from the substrate 300 .

[0087] Figure 6 Schematic diagram of the vacuum carrier 100 adsorbed on the contact surface of the wafer 200 in one embodiment of the present application. In the embodiment of the present application, the vacuum carrier 100 can be adsorbed on the contact surface of the wafer 200 through the negative pressure provided by the vacuum device (not shown in the figure). The contact surface of the wafer 200 is the side of the substrate 201 facing away from the epitaxial layer 210, which can be a flat surface formed after thinning. During adsorption, care should be taken to ensure that the wafer 200 completely covers the grooves 140 on the adsorption surface.

[0088] In step S300 , the epitaxial layer 210 and the substrate 300 are debonded, and the vacuum carrier 100 carrying the wafer 200 and the substrate 300 are separated.

[0089] In this embodiment, step S300 may specifically include:

[0090] Step S310, using the heated adsorption plate 400 to adsorb on a side of the substrate 300 away from the wafer 200;

[0091] Figure 7 FIG. 4 is a schematic diagram of a heating adsorption plate 400 adsorbed on a substrate 300 in an embodiment of the present application. Figure 7 As shown, the heating adsorption plate 400 can be adsorbed on the substrate 300 by vacuum adsorption, and the heating adsorption plate 400 has the function of heating the substrate 300 .

[0092] Step S320 , controlling the heating adsorption plate 400 to heat the substrate 300 .

[0093] By heating the substrate 300 , heat is transferred to the bonding surface, so that the bonding force of the bonding glue or bonding wax becomes weaker and is smaller than the adsorption force of the heated adsorption plate 400 and the vacuum carrier 100 .

[0094] In step S330 , the vacuum carrier 100 and the heated adsorption plate 400 are moved away from each other to separate the epitaxial layer 210 from the substrate 300 .

[0095] Figure 8 FIG. 2 is a schematic diagram of the separation of the epitaxial layer 210 and the substrate 300 in one embodiment of the present application. Figure 8 As shown, when the vacuum carrier 100 and the heated adsorption plate 400 are controlled to move away from each other, the wafer 200 moves with the vacuum carrier 100 and the substrate 300 moves with the heated adsorption plate 400, thereby achieving separation of the epitaxial layer 210 and the substrate 300.

[0096] When the vacuum carrier 100 and the heated adsorption plate 400 are controlled to move away from each other, the adsorption force of at least one of the vacuum carrier 100 and the heated adsorption plate 400 is increased so that the vacuum carrier 100 drives the wafer 200 and / or the substrate 300 to move along with the heated adsorption plate 400 to separate the epitaxial layer 210 from the substrate 300.

[0097] In the embodiment of the present application, the vacuum carrier 100 can be placed above the wafer 200 (e.g. Figure 7 As shown), it can also be below the wafer 200.

[0098] Step S400 , cleaning the bonding surface between the epitaxial layer 210 and the substrate 300 .

[0099] Fig. 9 FIG. 2 is a schematic diagram of cleaning the bonding surface of the epitaxial layer 210 in one embodiment of the present application. Fig. 9As shown, in the embodiment of the present application, the step of cleaning the bonding surface of the epitaxial layer 210 may specifically include: spraying the bonding surface of the epitaxial layer 210 with acetone, isopropanol and water in sequence, and rotating the wafer 200 during the process of spraying the bonding surface. Acetone and isopropanol can dissolve organic pollutants such as bonding glue and bonding wax remaining on the bonding surface. Optionally, the water used above is deionized water.

[0100] Specific as Figure 8 As shown, the epitaxial layer 210 of the wafer 200 faces upward, the vacuum carrier 100 supports the wafer 200, and the vacuum carrier 100 is arranged on the vacuum base 500 of the cleaning device. The vacuum base 500 can provide negative pressure, so that the wafer 200 is adsorbed on the vacuum carrier 100. In addition, a rotating shaft 510 is arranged under the vacuum base 500, and by connecting a driving member (not shown in the figure), the driving member can drive the vacuum base 500 to rotate, thereby realizing the rotation of the wafer 200. By combining the rotation and spraying methods, the cleaning effect of the bonding surface of the epitaxial layer 210 can be improved. At the same time, under the action of centrifugal force, the cleaning agent will disperse to the surroundings, and it is not easy to accumulate in the epitaxial layer 210, and it is not easy to penetrate radially inward from the gap between the wafer 200 and the vacuum carrier 100.

[0101] Furthermore, the semiconductor processing technology provided in the embodiment of the present application also includes:

[0102] In step S500 , the wafer 200 is separated from the vacuum carrier 100 , and the vacuum carrier 100 is soaked and cleaned.

[0103] In the embodiment of the present application, the step of soaking and cleaning the vacuum carrier 100 may specifically include: soaking the vacuum carrier 100 in acetone, isopropyl alcohol and water (preferably deionized water) in sequence. Since the vacuum carrier 100 provided in the embodiment of the present application has good corrosion resistance and can resist corrosion by acid, alkali and organic matter, it can be cleaned by soaking, which has high cleaning efficiency and good effect.

[0104] In the embodiment of the present application, due to the arrangement of the groove 140 of the vacuum carrier 100, the material selection, and the arrangement of the first suction hole 111 and the second suction hole 121, it is not easy for the cleaning agent to penetrate into the area corresponding to the first adsorption area 110, the second adsorption area 120, and the first plane area 130 on the contact surface of the wafer 200 during the cleaning process of the bonding surface of the epitaxial layer 210 in step S400. Since the contact surface of the wafer 200 has a good cleanliness, the cleaning process of the contact surface of the wafer 200 can be omitted, and only single-side cleaning is performed, thereby improving process efficiency; at the same time, it also reduces the risk of secondary contamination of the bonding surface during re-cleaning.

[0105] In summary, the embodiment of the present application provides a vacuum carrier 100 and a manufacturing method thereof and a semiconductor processing technology. The vacuum carrier 100 provided in the present application includes a carrier body for adsorbing wafers, the carrier body has an adsorption surface for contacting the wafer 200, and the adsorption surface is provided with adsorption areas and grooves 140 in sequence from the center to the outside in the radial direction, the grooves 140 surround the adsorption area, and the adsorption area is spaced apart with a number of suction holes. When the vacuum carrier 100 is mounted on a vacuum device, the suction holes can provide negative pressure to adsorb the wafer 200 on the adsorption surface of the vacuum carrier 100. When the vacuum carrier 100 carries the wafer 200 for cleaning, even if the cleaning agent penetrates from the edge of the wafer 200 to between the wafer 200 and the vacuum carrier 100, it can only penetrate to the groove 140 for temporary storage. The groove 140 can play a liquid sealing effect to prevent the cleaning agent from further penetrating into the adsorption area. Therefore, it can prevent the main area in the middle of the wafer 200 from being contaminated by the cleaning agent, thereby improving the surface quality of the side of the wafer 200 that contacts the vacuum carrier 100. Therefore, it can also reduce the cleaning process of the side of the wafer 200 that contacts the vacuum carrier 100. In addition, the adsorption area of ​​the vacuum carrier 100 can also be kept clean. The manufacturing method provided in the embodiment of the present application can be used to manufacture the above-mentioned vacuum carrier 100.

[0106] The semiconductor processing technology provided in the embodiment of the present application includes using the above-mentioned vacuum carrier 100 to adsorb the wafer 200 for debonding and cleaning, which can improve the problem of the wafer 200 being contaminated by the cleaning agent and improve the surface quality of the wafer 200.

[0107] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A vacuum carrier, characterized in that: The vacuum carrier (100) comprises a carrier body for adsorbing a wafer (200), the carrier body having an adsorption surface for contacting the wafer (200), an adsorption area and a groove (140) being arranged in sequence radially from the center outward, the groove (140) surrounding the adsorption area, and a plurality of adsorption holes being distributed at intervals in the adsorption area; The adsorption area comprises a first adsorption area (110) and a second adsorption area (120), the second adsorption area (120) surrounds the outer periphery of the first adsorption area (110), the groove (140) surrounds the outer periphery of the second adsorption area (120), a plurality of first adsorption holes (111) are spaced apart on the first adsorption area (110), a plurality of second adsorption holes (121) are spaced apart on the second adsorption area (120), and the aperture of the first adsorption hole (111) is larger than the aperture of the second adsorption hole (121); A first plane area (130) and a second plane area (150) are also provided on the adsorption surface; the first plane area (130) surrounds the second adsorption area (120) and is provided between the second adsorption area (120) and the groove (140); and the second plane area (150) surrounds the groove (140) and is provided between an edge of the vacuum carrier (100) and the groove (140).

2. The vacuum carrier according to claim 1, characterized in that: The aperture of the first suction hole (111) is 500-1000 μm; And / or, the aperture of the second suction hole (121) is 200-500 μm.

3. The vacuum carrier according to claim 1, characterized in that: The distribution density of the second suction holes (121) in the second adsorption area (120) is greater than the distribution density of the first suction holes (111) in the first adsorption area (110).

4. The vacuum carrier according to claim 1, characterized in that: One section of the groove (140) in its extension direction is a straight line section (141).

5. The vacuum carrier according to claim 1, characterized in that: The width of the second plane area (150) in the radial direction is 1 to 3 mm.

6. The vacuum carrier according to any one of claims 1 to 3, characterized in that: The width of the groove (140) is 1-3 mm, and the depth of the groove (140) is 100-300 μm.

7. The vacuum carrier according to any one of claims 1 to 3, characterized in that: The material of the vacuum carrier (100) is one of aluminum nitride, silicon carbide crystal, beryllium oxide, and diamond.

8. The vacuum carrier according to any one of claims 1 to 3, characterized in that: The surface roughness of the adsorption surface is less than 50 nm.

9. The method for manufacturing a vacuum carrier according to any one of claims 1 to 8, characterized in that: include: Providing a substrate having a processing plane, wherein an adsorption area is set on the processing plane; A suction hole is provided in the adsorption area, and a groove (140) surrounding the adsorption area is provided on the periphery of the adsorption area; The processed plane is polished to obtain an adsorption surface.

10. A semiconductor processing process, characterized in that: Using the vacuum carrier according to any one of claims 1 to 8, the semiconductor processing process comprises: Providing a substrate (300) and a wafer (200), wherein the wafer (200) comprises a substrate (201) and an epitaxial layer (210), and the epitaxial layer (210) is bonded to the substrate (300); Adsorbing the vacuum carrier (100) onto a side of the wafer (200) facing away from the substrate (300); Debonding the epitaxial layer (210) and the substrate (300), and separating the wafer (200) carried by the vacuum carrier (100) from the substrate (300); The bonding surface between the epitaxial layer (210) and the substrate (300) is cleaned.

11. The semiconductor processing method according to claim 10, characterized in that: The step of cleaning the bonding surface of the epitaxial layer (210) comprises: Acetone, isopropanol and water are used sequentially to spray the bonding surface of the epitaxial layer (210), and the wafer (200) is rotated during the process of spraying the bonding surface.

12. The semiconductor processing method according to claim 10 or 11, characterized in that: The semiconductor processing technology also includes: The wafer (200) is separated from the vacuum carrier (100), and the vacuum carrier (100) is immersed and cleaned.

13. The semiconductor processing method according to claim 12, characterized in that: The step of soaking and cleaning the vacuum carrier (100) comprises: The vacuum carrier (100) is sequentially immersed in acetone, isopropanol and water.

14. The semiconductor processing method according to claim 10 or 11, characterized in that: The step of debonding the epitaxial layer (210) and the substrate (300), and separating the wafer (200) carried by the vacuum carrier (100) from the substrate (300), comprises: Using a heated adsorption plate (400) to adsorb onto a side of the substrate (300) away from the wafer (200); controlling the heating adsorption plate (400) to heat the substrate (300); The vacuum carrier (100) and the heated adsorption plate (400) are moved away from each other, so that the epitaxial layer (210) is separated from the substrate (300).

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