Semiconductor light emitting structure and preparation method thereof

Abstract

The present invention provides a semiconductor light-emitting structure and a preparation method thereof, wherein at least one of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer further comprises a characteristic element, the characteristic element is different from the element in the main material and the doping element, the molar percentage concentration of the characteristic element is 0.01% to 1%, and the characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements; when the first confinement layer and / or the first waveguide layer have the characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer and / or the second waveguide layer have the characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element. The reliability of the semiconductor light-emitting structure is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor light-emitting structure and a preparation method thereof. Background Art

[0002] Edge-emitting semiconductor lasers have the advantages of a wide wavelength range, high reliability, and high luminous power density, and have been involved in many fields such as industry, telecommunications, science, consumption, military, and aerospace. Among them, semiconductor lasers based on GaAs materials are one of the most mature semiconductor laser technologies, and GaAs-based near-infrared band (760nm-1060nm) edge-emitting semiconductor lasers have been widely used. However, in order to meet the growing demand for lasers in various industries and consumer markets, it is still necessary to continuously optimize the technology, process, performance, and reliability of semiconductor lasers. The long-term and reliable operation of semiconductor lasers is crucial to their application in various fields. Summary of the invention

[0003] Therefore, the technical problem to be solved by the present invention is how to improve the reliability of a semiconductor light-emitting structure, thereby providing a semiconductor light-emitting structure and a method for preparing the same.

[0004] The present invention provides a semiconductor light-emitting structure, comprising: a stacked first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer; wherein the first confinement layer, the first waveguide layer, the second waveguide layer, and the second confinement layer all comprise a main material and a doping element, the doping element in the first confinement layer and the first waveguide layer is N-type, and the doping element in the second waveguide layer and the second confinement layer is P-type; at least one of the first confinement layer, the first waveguide layer, the second waveguide layer, and the second confinement layer further comprises a characteristic element, the characteristic element is different from the element in the main material and does not The characteristic element has a molar concentration of 0.01% to 1% similar to the doping element, and the characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements; wherein, when the first confinement layer and / or the first waveguide layer has the characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer and / or the second waveguide layer has the characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element.

[0005] Optionally, the characteristic elements include one or more of Mg, N, Te, C, Si, Ge, In, and Sb.

[0006] Optionally, the material of the first limiting layer includes a first main material, a first doping element and a first characteristic element, the first doping element is N-type, the first characteristic element is different from the element in the first main material and different from the first doping element, the molar percentage concentration of the first characteristic element is 0.01%~1%, the first characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements, and the electronegativity of the first characteristic element is less than the electronegativity of the first doping element.

[0007] Optionally, the material of the first waveguide layer includes a second main material, a second doping element and a second characteristic element, the second doping element is N-type, the second characteristic element is different from the element in the second main material and different from the second doping element, the molar percentage concentration of the second characteristic element is 0.01%~1%, the second characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the second characteristic element is less than the electronegativity of the second doping element.

[0008] Optionally, the material of the second waveguide layer includes a third main material, a third doping element and a third characteristic element, the third doping element is P-type, the third characteristic element is different from the elements in the third main material and different from the third doping element, the molar percentage concentration of the third characteristic element is 0.01%~1%, the third characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the third characteristic element is greater than the electronegativity of the third doping element.

[0009] Optionally, the material of the second limiting layer includes a fourth main material, a fourth doping element and a fourth characteristic element, the fourth doping element is P-type, the fourth characteristic element is different from the elements in the fourth main material and different from the fourth doping element, the molar percentage concentration of the fourth characteristic element is 0.01%~1%, the fourth characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements, and the electronegativity of the fourth characteristic element is greater than the electronegativity of the fourth doping element.

[0010] Optionally, the characteristic elements include a first type of characteristic elements and a second type of characteristic elements, the first type of characteristic elements are one or a combination of two of group II elements and group III elements, and the second type of characteristic elements are one or a combination of two of group IV elements and group V elements.

[0011] Optionally, at least one of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer includes a plurality of stacked characteristic element doped sublayers, and the characteristic element in one of the adjacent characteristic element doped sublayers is a first type characteristic element, and the characteristic element in another characteristic element doped sublayer is a second type characteristic element.

[0012] Optionally, at least one of the first waveguide layer and the second waveguide layer includes a characteristic element doped sublayer, and a distance between the characteristic element doped sublayer and the active layer is greater than zero.

[0013] Optionally, the main material of the first restriction layer is Al x1 Ga 1-x1 As, the main material of the first waveguide layer is Al x2 Ga 1-x2 As, the main material of the second waveguide layer is Al x3 Ga 1-x3 As, the main material of the second limiting layer is Al x4 Ga 1-x4 As.

[0014] The present invention also provides a method for preparing a semiconductor light-emitting structure, comprising: forming a stacked first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, and a second limiting layer; wherein the first limiting layer, the first waveguide layer, the second waveguide layer, and the second limiting layer all include a main material and a doping element, the doping element in the first limiting layer and the first waveguide layer is N-type, and the doping element in the second waveguide layer and the second limiting layer is P-type; wherein at least one of the first limiting layer, the first waveguide layer, the second waveguide layer, and the second limiting layer further includes a characteristic element, and the characteristic element is different from the main material and is different from the doping element, the molar percentage concentration of the characteristic element is 0.01%-1%, and the characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements; wherein, when the first confinement layer and / or the first waveguide layer contain the characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer and / or the second waveguide layer contain the characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element.

[0015] Optionally, the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer and the second confinement layer are continuously grown in the same chamber.

[0016] Optionally, the active layer and the first waveguide layer have at least one first identical element, the gas source used to form the active layer includes the first gas source, the gas source used to form the first waveguide layer includes the second gas source, and the first gas source and the second gas source both contain the first identical element; the first gas source and the second gas source are introduced into the chamber through different source bottles and different pipelines; and / or, the active layer and the second waveguide layer have at least one second identical element, the gas source used to form the active layer includes the first gas source, the gas source used to form the first waveguide layer includes the third gas source, and the first gas source and the third gas source both contain the second identical element; the first gas source and the third gas source are introduced into the chamber through different source bottles and different pipelines.

[0017] The technical solution of the present invention has the following beneficial effects:

[0018] In the semiconductor light-emitting structure provided by the technical solution of the present invention, the material of at least one of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer includes a characteristic element, the characteristic element is different from the element in the main material and different from the doping element, the molar percentage concentration of the characteristic element is 0.01% to 1%, and the characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements. Wherein, when the first confinement layer and / or the first waveguide layer have the characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer and / or the second waveguide layer have the characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element. The molar percentage concentration of the characteristic element is very small, combined with the characteristics of the electronegativity of the characteristic element, the activation energy of the defects in the material is reduced, and the defect pinning effect is achieved; secondly, the characteristic element blocks the defects from extending to the active layer. The probability of non-radiative recombination in the active layer is simply and effectively reduced, thereby improving the reliability of the semiconductor light-emitting structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 FIG. 4 is a schematic structural diagram of a semiconductor light emitting structure in an embodiment of the present invention. DETAILED DESCRIPTION

[0021] Research has found that when a semiconductor laser works at a high current density, there is a large dislocation network in the active layer of the semiconductor laser, which leads to the performance degradation of the semiconductor laser. The dislocation network is a non-radiative area and will absorb light. These dislocation networks are grown from the dislocations that initially exist in the semiconductor laser, and mainly come from the following three aspects: First, the dislocations in the substrate extend to the active layer during the epitaxial growth process; second, the dislocations formed during epitaxial growth, especially at the heterojunction, where misfit dislocations, stacking dislocations, voids, and interstitial atoms are easily generated; third, defects introduced during the formation process of the semiconductor laser, such as mechanical damage caused during cleavage.

[0022] In view of the influence of various defects inside semiconductor lasers on the life of semiconductor lasers, the following methods are usually used to improve the reliability of semiconductor lasers: first, improve the defects introduced by the substrate, increase special substrate treatment, and make the process complicated; second, reduce the damage caused by contamination and process; third, control the defects generated during the epitaxial growth process. More research focuses on growing special buffer layers and transition layers with a certain thickness to reduce the misfit dislocations of the epitaxial growth layer. This method has limited effect.

[0023] On this basis, the present invention provides a semiconductor light-emitting structure and a preparation method thereof, which improves the reliability of the semiconductor light-emitting structure.

[0024] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0026] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0027] An embodiment of the present invention provides a semiconductor light emitting structure, referring to Figure 1 ,include:

[0028] A first confinement layer 110, a first waveguide layer 120, an active layer 130, a second waveguide layer 140 and a second confinement layer 150 are stacked; wherein the first confinement layer 110, the first waveguide layer 120, the second waveguide layer 140 and the second confinement layer 150 all include a main material and a doping element, the doping element in the first confinement layer 110 and the first waveguide layer 120 is N-type, and the doping element in the second waveguide layer 140 and the second confinement layer 150 is P-type;

[0029] At least one of the first limiting layer 110, the first waveguide layer 120, the second waveguide layer 140 and the second limiting layer 150 further comprises a characteristic element, the characteristic element is different from the element in the main material and different from the doping element, the molar percentage concentration of the characteristic element is 0.01% to 1%, and the characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements;

[0030] When the first confinement layer 110 and / or the first waveguide layer 120 contain a characteristic element, in the first confinement layer 110 and / or the first waveguide layer 120, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer 150 and / or the second waveguide layer 140 contain a characteristic element, in the second confinement layer 150 and / or the second waveguide layer 140, the electronegativity of the characteristic element is greater than the electronegativity of the doping element.

[0031] In this embodiment, at least one of the first confinement layer 110, the first waveguide layer 120, the second waveguide layer 140 and the second confinement layer 150 includes a characteristic element, the molar percentage concentration of the characteristic element is 0.01% to 1%, and the characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements. Wherein, when the first confinement layer and / or the first waveguide layer contain the characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer and / or the second waveguide layer contain the characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element. The molar percentage concentration of the characteristic element is very small, and combined with the characteristics of the electronegativity of the characteristic element, the activation energy of defects in the material is reduced, and the effect of pinning defects is achieved; secondly, the characteristic element blocks the defects from extending to the active layer. The probability of non-radiative recombination in the active layer is simply and effectively reduced, thereby improving the reliability of the semiconductor light-emitting structure.

[0032] In one embodiment, the semiconductor light emitting structure further includes: a semiconductor substrate layer 100; a first confinement layer 110, a first waveguide layer 120, an active layer 130, a second waveguide layer 140 and a second confinement layer 150 located on one side of the semiconductor substrate layer 100. The first confinement layer 110 is located between the first waveguide layer 120 and the semiconductor substrate layer 100.

[0033] In one embodiment, the semiconductor light emitting structure comprises an edge emitting semiconductor light emitting structure.

[0034] In one embodiment, the semiconductor substrate layer 100 is a GaAs substrate. In other embodiments, the semiconductor substrate layer may also be other semiconductor materials.

[0035] In one embodiment, the semiconductor light emitting structure further includes: a buffer layer located between the first confinement layer 110 and the semiconductor substrate layer 100 ; and a contact layer located on a side of the second confinement layer 150 away from the second waveguide layer 140 .

[0036] In one embodiment, the molar concentration of the characteristic element is 0.01% to 1%, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.08% or 1%.

[0037] In one embodiment, the characteristic elements include one or more of Mg, N, Te, C, Si, Ge, In, and Sb.

[0038] In one embodiment, the characteristic elements include first-type characteristic elements and second-type characteristic elements, wherein the first-type characteristic elements are one or a combination of two of group II elements and group III elements, and the second-type characteristic elements are one or a combination of two of group IV elements and group V elements. When the first-type characteristic elements and the second-type characteristic elements are present, the first-type characteristic elements and the second-type characteristic elements can perform stress compensation, improve the pinning effect on defects, and increase the molar percentage concentration of the characteristic elements.

[0039] In one embodiment, the characteristic element is a first type characteristic element. In another embodiment, the characteristic element is a second type characteristic element. In another embodiment, the characteristic element includes a first type characteristic element and a second type characteristic element.

[0040] In one embodiment, the material of the first limiting layer 110 includes a first main material, a first doping element and a first characteristic element, the first characteristic element is different from the elements in the first main material and different from the first doping element, the first doping element is N-type, the molar percentage concentration of the first characteristic element is 0.01%~1%, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.08% or 1%, the first characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements, and the electronegativity of the first characteristic element is less than the electronegativity of the first doping element.

[0041] In other embodiments, the material of the first restriction layer 110 does not include the first characteristic element.

[0042] In one embodiment, the material of the first waveguide layer 120 includes a second main material, a second doping element and a second characteristic element, the second characteristic element is different from the element in the second main material and different from the second doping element, the second doping element is N-type, the molar percentage concentration of the second characteristic element is 0.01% to 1%, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.08% or 1%, the second characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the second characteristic element is less than the electronegativity of the second doping element.

[0043] In other embodiments, the material of the first waveguide layer 120 does not include the second characteristic element.

[0044] In one embodiment, the material of the second waveguide layer 140 includes a third main material, a third doping element and a third characteristic element, the third characteristic element is different from the elements in the third main material and different from the third doping element, the third doping element is P-type, the molar percentage concentration of the third characteristic element is 0.01%~1%, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.08% or 1%, the third characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the third characteristic element is greater than the electronegativity of the third doping element.

[0045] In other embodiments, the material of the second waveguide layer 140 does not include the third characteristic element.

[0046] In one embodiment, the material of the second limiting layer 150 includes a fourth main material, a fourth doping element and a fourth characteristic element, the fourth characteristic element is different from the elements in the fourth main material and different from the fourth doping element, the fourth doping element is P-type, the molar percentage concentration of the fourth characteristic element is 0.01%~1%, for example, 0.01%, 0.02%, 0.03%, 0.04%, 0.05%, 0.08% or 1%, the fourth characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements, and the electronegativity of the fourth characteristic element is greater than the electronegativity of the fourth doping element.

[0047] In other embodiments, the material of the second limiting layer 150 does not include the fourth characteristic element.

[0048] In one embodiment, the first confinement layer 110 includes a first characteristic element, the first waveguide layer 120 includes a second characteristic element, the second waveguide layer 140 includes a third characteristic element, and the second confinement layer 150 includes a fourth characteristic element.

[0049] In other embodiments, the first limiting layer 110 may include the first characteristic element, the second limiting layer 150 may include the fourth characteristic element, the first waveguide layer 120 may not include the second characteristic element, and the second waveguide layer 140 may not include the third characteristic element.

[0050] In other embodiments, the first limiting layer 110 does not include the first characteristic element, the second limiting layer 150 does not include the fourth characteristic element, the first waveguide layer 120 includes the second characteristic element, and the second waveguide layer 140 includes the third characteristic element.

[0051] In other embodiments, when the first restriction layer 110 includes the first characteristic element, the second restriction layer 150 does not include the second characteristic element. Alternatively, when the first restriction layer 110 does not include the first characteristic element, the second restriction layer 150 includes the second characteristic element.

[0052] In other embodiments, when the first waveguide layer 120 includes the second characteristic element, the second waveguide layer 140 does not include the third characteristic element. Alternatively, when the first waveguide layer 120 does not include the second characteristic element, the second waveguide layer 140 includes the third characteristic element.

[0053] In one embodiment, at least one of the first confinement layer 110, the first waveguide layer 120, the second waveguide layer 140 and the second confinement layer 150 includes a plurality of stacked characteristic element doped sublayers, wherein the characteristic element in one of the adjacent characteristic element doped sublayers is a first type characteristic element and the characteristic element in another characteristic element doped sublayer is a second type characteristic element, so that the adjacent characteristic element doped sublayers balance the stress during the growth of the epitaxial layer.

[0054] In one embodiment, for adjacent characteristic element doped sublayers, the molar percentage concentration of the first type characteristic element in one characteristic element doped sublayer is close to the molar percentage concentration of the second type characteristic element in another characteristic element doped sublayer. For example, the difference between the molar percentage concentration of the first type characteristic element in one characteristic element doped sublayer and the molar percentage concentration of the second type characteristic element in another characteristic element doped sublayer is less than or equal to 0.5%, for example, 0.5% or 0.2%.

[0055] Exemplarily, the first confinement layer 110 includes a plurality of stacked first characteristic element doped sublayers, wherein the characteristic element in one of adjacent first characteristic element doped sublayers is a first type characteristic element, and the characteristic element in another first characteristic element doped sublayer is a second type characteristic element.

[0056] Exemplarily, the first waveguide layer 120 includes a plurality of stacked second characteristic element doped sublayers, wherein the characteristic element in one of the adjacent second characteristic element doped sublayers is the first type characteristic element, and the characteristic element in another second characteristic element doped sublayer is the second type characteristic element.

[0057] Exemplarily, the second waveguide layer 140 includes a plurality of stacked third characteristic element doped sublayers, wherein the characteristic element in one of the adjacent third characteristic element doped sublayers is the first type characteristic element, and the characteristic element in another third characteristic element doped sublayer is the second type characteristic element.

[0058] Exemplarily, the second confinement layer 150 includes a plurality of stacked fourth characteristic element doped sublayers, wherein the characteristic element in one of adjacent fourth characteristic element doped sublayers is a first type characteristic element, and the characteristic element in another fourth characteristic element doped sublayer is a second type characteristic element.

[0059] In one embodiment, at least one of the first waveguide layer 120 and the second waveguide layer 140 includes a characteristic element doped sublayer, and a distance between the characteristic element doped sublayer and the active layer is greater than zero.

[0060] Exemplarily, the first waveguide layer 120 includes a plurality of stacked second characteristic element doped sublayers, and the distance between the second characteristic element doped sublayer and the active layer is greater than zero; and / or, the second waveguide layer 140 includes a plurality of stacked third characteristic element doped sublayers, and the distance between the third characteristic element doped sublayer and the active layer is greater than zero.

[0061] In this embodiment, the elements in the host material include group III elements and group V elements.

[0062] In one embodiment, the main material of the first confinement layer 110 is Al x1 Ga 1-x1 As, the main material of the first waveguide layer 120 is Al x2 Ga 1-x2 As, the main material of the second waveguide layer 140 is Al x3 Ga 1-x3 As, the main material of the second limiting layer 150 is Al x4 Ga 1-x4 As.

[0063] It should be noted that, in other embodiments, the main material of the first limiting layer 110 may be a four-element material, the main material of the first waveguide layer 120 may be a four-element material, the main material of the second waveguide layer 140 may be a four-element material, and the main material of the second limiting layer 150 may be a four-element material.

[0064] It should be noted that the active layer does not contain the characteristic elements.

[0065] In one embodiment, the thicknesses of the first waveguide layer 120 and the second waveguide layer 140 may be consistent or inconsistent.

[0066] In one embodiment, the thicknesses of the first restriction layer 110 and the second restriction layer 150 may be consistent or inconsistent.

[0067] In one embodiment, the thickness of the first waveguide layer 120 is 0.01 micrometer to 2 micrometers, and the thickness of the second waveguide layer 140 is 0.01 micrometer to 2 micrometers.

[0068] In one embodiment, the thickness of the first restriction layer 110 is 0.5 micrometers to 4 micrometers, and the thickness of the second restriction layer 150 is 0.5 micrometers to 4 micrometers.

[0069] In this embodiment, the valence structure of the first type characteristic element is close to the valence structure of the group III element in the main material. The first type characteristic element is substitutionally doped with the group III element in the main material. The valence structure of the second type characteristic element is close to the valence structure of the group V element in the main material. The second type characteristic element is substitutionally doped with the group V element in the main material.

[0070] Another embodiment of the present invention further provides a method for preparing a semiconductor light-emitting structure, comprising: forming a stacked first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer; wherein the first confinement layer, the first waveguide layer, the second waveguide layer, and the second confinement layer all include a main material and a doping element, the doping element in the first confinement layer and the first waveguide layer is N-type, and the doping element in the second waveguide layer and the second confinement layer is P-type; wherein at least one of the first confinement layer, the first waveguide layer, the second waveguide layer, and the second confinement layer further includes a characteristic element, and the characteristic element is different from the main material. an element in the bulk material and is different from the doping element, the molar percentage concentration of the characteristic element is 0.01%-1%, and the characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements; wherein, when the first confinement layer and / or the first waveguide layer contain the characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element; when the second confinement layer and / or the second waveguide layer contain the characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element.

[0071] In one embodiment, the first confinement layer, the first waveguide layer, the active layer, the second waveguide layer and the second confinement layer are grown continuously in the same chamber.

[0072] In one embodiment, forming a stacked first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer comprises: sequentially forming a stacked first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer on one side of a substrate.

[0073] In one embodiment, the temperature for forming the stacked first confinement layer, the first waveguide layer, the active layer, the second waveguide layer and the second confinement layer is 650° C. to 850° C. When the main material of the first confinement layer 110 is Al x1 Ga 1-x1 As, the main material of the first waveguide layer 120 is Al x2 Ga 1-x2 As, the main material of the second waveguide layer 140 is Al x3 Ga1-x3 As, the main material of the second limiting layer 150 is Al x4 Ga 1-x4 As, high temperature growth can increase the surface mobility of Al atoms and obtain better growth quality.

[0074] In one embodiment, the active layer and the first waveguide layer have at least one first identical element, the gas source used to form the active layer includes a first gas source, the gas source used to form the first waveguide layer includes a second gas source, and both the first gas source and the second gas source contain the first identical element. The first gas source and the second gas source are introduced into the chamber through different source bottles and different pipelines to ensure timely switching at the interface between the first waveguide layer and the active layer, thereby improving the epitaxial growth quality at the interface between the first waveguide layer and the active layer.

[0075] In one embodiment, the active layer and the second waveguide layer have at least one second identical element, the gas source used to form the active layer includes a first gas source, the gas source used to form the first waveguide layer includes a third gas source, and both the first gas source and the third gas source contain the second identical element. The first gas source and the third gas source are introduced into the chamber through different source bottles and different pipelines. This ensures that the interface between the second waveguide layer and the active layer is switched in time, thereby improving the quality of epitaxial growth at the interface between the second waveguide layer and the active layer.

[0076] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A semiconductor light emitting structure, characterized in that: include: A stacked first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer; wherein the first confinement layer, the first waveguide layer, the second waveguide layer, and the second confinement layer all include a main material and a doping element, the doping element in the first confinement layer and the first waveguide layer is N-type, and the doping element in the second waveguide layer and the second confinement layer is P-type; At least one of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer further comprises a characteristic element, the characteristic element is different from the element in the main material of the corresponding layer and different from the doping element of the corresponding layer, the molar percentage concentration of the characteristic element is 0.01% to 1%, and the characteristic element is a combination of one or more of Group II elements, Group III elements, Group IV elements and Group V elements; When the first confinement layer and / or the first waveguide layer contain a characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element in the corresponding layer; when the second confinement layer and / or the second waveguide layer contain a characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element in the corresponding layer.

2. The semiconductor light emitting structure according to claim 1, characterized in that: The characteristic elements include one or more of Mg, N, C, Si, Ge, In, and Sb.

3. The semiconductor light emitting structure according to claim 1, characterized in that: The material of the first limiting layer includes a first main material, a first doping element and a first characteristic element, the first doping element is N-type, the first characteristic element is different from the elements in the first main material and different from the first doping element, the molar percentage concentration of the first characteristic element is 0.01%~1%, the first characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the first characteristic element is less than the electronegativity of the first doping element.

4. The semiconductor light emitting structure according to claim 1, characterized in that: The material of the first waveguide layer includes a second main material, a second doping element and a second characteristic element, the second doping element is N-type, the second characteristic element is different from the element in the second main material and different from the second doping element, the molar percentage concentration of the second characteristic element is 0.01%~1%, the second characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the second characteristic element is less than the electronegativity of the second doping element.

5. The semiconductor light emitting structure according to claim 1, characterized in that: The material of the second waveguide layer includes a third main material, a third doping element and a third characteristic element, the third doping element is P-type, the third characteristic element is different from the elements in the third main material and different from the third doping element, the molar percentage concentration of the third characteristic element is 0.01%~1%, the third characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the third characteristic element is greater than the electronegativity of the third doping element.

6. The semiconductor light emitting structure according to claim 1, characterized in that: The material of the second limiting layer includes a fourth main material, a fourth doping element and a fourth characteristic element, the fourth doping element is P-type, the fourth characteristic element is different from the elements in the fourth main material and different from the fourth doping element, the molar percentage concentration of the fourth characteristic element is 0.01%~1%, the fourth characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements, and the electronegativity of the fourth characteristic element is greater than the electronegativity of the fourth doping element.

7. The semiconductor light emitting structure according to claim 1, characterized in that: The characteristic elements include first-type characteristic elements and second-type characteristic elements, the first-type characteristic elements are one or a combination of two of group II elements and group III elements, and the second-type characteristic elements are one or a combination of two of group IV elements and group V elements.

8. The semiconductor light emitting structure according to claim 7, characterized in that: At least one of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer includes a plurality of stacked characteristic element doped sublayers, wherein the characteristic element in one of the adjacent characteristic element doped sublayers is a first type characteristic element, and the characteristic element in another characteristic element doped sublayer is a second type characteristic element.

9. The semiconductor light emitting structure according to claim 1, characterized in that: At least one of the first waveguide layer and the second waveguide layer comprises a characteristic element doped sublayer, the characteristic element doped sublayer has the characteristic element, and a distance between the characteristic element doped sublayer and the active layer is greater than zero.

10. The semiconductor light emitting structure according to claim 1, characterized in that: The main material of the first restriction layer is Al x1 Ga 1-x1 As, the main material of the first waveguide layer is Al x2 Ga 1-x2 As, the main material of the second waveguide layer is Al x3 Ga 1-x3 As, the main material of the second limiting layer is Al x4 Ga 1-x4 As.

11. A method for preparing a semiconductor light emitting structure according to any one of claims 1 to 10, characterized in that: include: Forming a stacked first confinement layer, a first waveguide layer, an active layer, a second waveguide layer, and a second confinement layer; wherein the first confinement layer, the first waveguide layer, the second waveguide layer, and the second confinement layer all include a main material and a doping element, the doping element in the first confinement layer and the first waveguide layer is N-type, and the doping element in the second waveguide layer and the second confinement layer is P-type; Wherein, at least one of the first confinement layer, the first waveguide layer, the second waveguide layer and the second confinement layer further comprises a characteristic element, the characteristic element is different from the element in the main material of the corresponding layer and different from the doping element of the corresponding layer, the molar percentage concentration of the characteristic element is 0.01% to 1%, and the characteristic element is a combination of one or more of group II elements, group III elements, group IV elements and group V elements; When the first confinement layer and / or the first waveguide layer contain a characteristic element, in the first confinement layer and / or the first waveguide layer, the electronegativity of the characteristic element is less than the electronegativity of the doping element in the corresponding layer; when the second confinement layer and / or the second waveguide layer contain a characteristic element, in the second confinement layer and / or the second waveguide layer, the electronegativity of the characteristic element is greater than the electronegativity of the doping element in the corresponding layer.

12. The method for preparing a semiconductor light emitting structure according to claim 11, characterized in that: The first confinement layer, the first waveguide layer, the active layer, the second waveguide layer and the second confinement layer are continuously grown in a same chamber.

13. The method for preparing a semiconductor light emitting structure according to claim 12, characterized in that: The active layer and the first waveguide layer contain at least one first identical element, the gas source used to form the active layer includes a first gas source, the gas source used to form the first waveguide layer includes a second gas source, and both the first gas source and the second gas source contain the first identical element; the first gas source and the second gas source are introduced into the chamber through different source bottles and different pipelines; and / or, The active layer and the second waveguide layer have at least one second identical element, the gas source used to form the active layer includes a first gas source, the gas source used to form the first waveguide layer includes a third gas source, and the first gas source and the third gas source both contain the second identical element; the first gas source and the third gas source are introduced into the chamber through different source bottles and different pipelines.

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