Laser interferometry micro-nano manufacturing system based on galvanometer

Abstract

The invention relates to a laser interference micro-nano manufacturing system based on a galvanometer, comprising a laser, a laser beam splitting light transmission device, a first galvanometer receiving the first coherent light beam, and a second galvanometer receiving the second coherent light beam; a processing platform comprising a carrier, an X-axis moving module and a Y-axis moving module, the carrier being used to load a workpiece to be processed, the surface of the workpiece to be processed being divided into a plurality of processing partitions arranged in an array, the carrier being arranged on the X-axis moving module, the X-axis moving module being arranged on the Y-axis moving module, the first coherent light beam controlled by the first galvanometer and the second coherent light beam controlled by the second galvanometer converge to form an interference light spot, the interference light spot processes a block pattern in each processing partition, and under the coordinated movement of the X-axis moving module and the Y-axis moving module, the carrier is driven to translate relative to the first galvanometer and the second galvanometer, so that the interference light spot moves to all the processing partitions one by one to realize the splicing processing of all the block patterns to obtain a complete pattern.

Description

Technical Field

[0001] The present invention relates to the technical field of micro-nano processing, and in particular to a laser interference micro-nano manufacturing system based on a galvanometer. Background Art

[0002] The strange phenomena and laws exhibited by micro-nano functional surfaces in engineering technology applications will change the existing theoretical framework, breed a new technological revolution, and bring great development space to the fields of materials, information, green manufacturing, biology and medicine. The existing laser micro-nano manufacturing technology has shown its unique advantages and potential, but has not yet made major breakthroughs in large-area, low-cost and efficient preparation, which has constrained the application of laser micro-nano manufacturing technology in defense, aerospace, industry and medicine. The fundamental reason is the lack of efficient laser micro-nano manufacturing methods and equipment.

[0003] In 2019, Chao He et al. from the Technische Universität Aachen in Germany (Journal of Laser Micro / Nanoengineering, 2019.14(1):95-99) combined laser interferometry with a displacement (XY) platform to achieve large-area micro-nano manufacturing by laser interferometry splicing. In this technology, the splicing process of the light spot is completely dependent on the displacement platform. The splicing accuracy of the light spot is determined by the accuracy of the displacement platform, and its processing efficiency also depends on the displacement speed of the displacement platform. As we all know, the movement speed of the displacement platform is much lower than the speed of the galvanometer to control the movement of the light spot. This technology still cannot meet the commercial needs of efficient manufacturing of large-area micro-nano array structures.

[0004] In 2023, Kang Xu et al. from Southern University of Science and Technology (Optica, 2023, 10(1):97-104) modulated the laser into a linear laser for interference processing, which improved the processing efficiency of nanoscale gratings. The maximum processing speed can reach: 60mm 2 Although this technology has improved the efficiency of nano-grating preparation to a certain extent, the spot splicing and processing speed still rely on the displacement platform, and because the laser spot is modulated into a linear shape, it is limited to the preparation of grating structures.

[0005] The existing laser galvanometer point-by-point scanning laser processing technology has the disadvantages of low processing efficiency and large feature size. Although the combination of laser interference technology and displacement platform has improved the processing efficiency and has the ability to prepare nanometer-scale feature sizes, the processing speed is still limited by the movement efficiency of the displacement platform. Summary of the invention

[0006] The purpose of the present invention is to provide a galvanometer-based laser interference micro-nano manufacturing system to solve the problem that the processing speed of the prior art micro-nano array structure is limited by the movement efficiency of the displacement platform and large-area pattern processing cannot be achieved.

[0007] According to one aspect of the present invention, a galvanometer-based laser interferometer micro-nano manufacturing system is provided, characterized in that it includes:

[0008] A laser, for emitting a processing laser;

[0009] A laser beam splitting light transmission device, which is arranged opposite to the light outlet of the laser and is used to split the received processing laser into at least a first coherent light beam and a second coherent light beam;

[0010] A first galvanometer and a second galvanometer, wherein the first galvanometer and the second galvanometer are arranged at the rear end of the laser beam splitting light transmission device, the first galvanometer receives the first coherent light beam, and the second galvanometer receives the second coherent light beam;

[0011] A processing platform, wherein the processing platform is arranged below the first galvanometer and the second galvanometer, and the processing platform includes a carrier, an X-axis moving module and a Y-axis moving module. The carrier is used to load a workpiece to be processed, and the surface of the workpiece to be processed is divided into a plurality of processing partitions arranged in an array. The carrier is arranged on the X-axis moving module, and the X-axis moving module is arranged on the Y-axis moving module. The first coherent light beam controlled by the first galvanometer and the second coherent light beam controlled by the second galvanometer converge to form an interference spot, and the interference spot processes a block pattern in each processing partition. Under the coordinated movement of the X-axis moving module and the Y-axis moving module, the carrier is driven to translate relative to the first galvanometer and the second galvanometer, so that the interference spot moves one by one to all the processing partitions to realize the splicing processing of all the block patterns to obtain a complete pattern.

[0012] In one embodiment, the scanning overlap area of ​​the scanning range of the first galvanometer on the stage and the scanning range of the second galvanometer on the stage is set as a processing area S, the first galvanometer and the second galvanometer are arranged at the same height and the distance from the light outlet to the processing surface is set to H, the interference incident angle of the first related light beam and the second coherent light beam is set to θ, the distance between the first galvanometer and the second galvanometer is set to d, the distance from the light outlet of the first galvanometer and the second galvanometer to the galvanometer edge is set to k, and the maximum interference incident angle is set to θ1;

[0013] Among them, S, H, θ1, d and k are related, and:

[0014] S=2Htanθ1[2Htanθ1-(d+2k)].

[0015] In one embodiment,

[0016]

[0017] E=P*t (2)

[0018] Among them, Cd——processing depth (an indicator to measure the degree of microstructure forming) (mm)

[0019] EC——resin critical energy (material properties) (mJ / mm 2 )

[0020] Dp——resin penetration depth (material properties) (mm)

[0021] P——Laser power (mW / mm 2 )

[0022] t——Processing time (s)

[0023] s——area of ​​a single spot (mm 2 )

[0024] Derived from formulas (1) and (2):

[0025]

[0026]

[0027] In formula (4), EC and Dp are constant values ​​of photosensitive resin, and s is the area of ​​a light spot which is also a fixed value; therefore, v is proportional to W.

[0028] In one embodiment, the X-axis moving module includes a tray, an X-axis servo motor, an X-axis precision screw and an X-axis transmission nut, the X-axis servo motor is arranged on the tray and connected to the X-axis precision screw, the X-axis transmission nut is sleeved on the outside of the X-axis precision screw and connected to the carrier, and the Y-axis moving module includes a Y-axis servo motor, a Y-axis precision screw and a Y-axis transmission nut, the Y-axis servo motor is connected to the Y-axis precision screw, the Y-axis transmission nut is sleeved on the outside of the Y-axis precision screw and connected to the tray.

[0029] In one embodiment, the laser beam splitting light transmission device includes a beam splitter and a reflector, wherein the beam splitter is opposite to the light outlet of the laser, and is used to split the processing laser into the first coherent light beam and the second coherent light beam, and the first coherent light beam continues to be transmitted after passing through the beam splitter, and the reflector is arranged at intervals on the opposite side of the beam splitter, and the second coherent light beam separated by reflection from the beam splitter is transmitted to the reflector, and then continues to be transmitted after reflection from the reflector; wherein the second coherent light beam is transmitted in parallel with the first coherent light beam.

[0030] In one embodiment, the beam splitter is a beam splitter or a grating.

[0031] In one embodiment, the laser beam splitting light transmission device also includes a first polarizer and a first wave plate, wherein the first polarizer is spaced apart and arranged at the rear end of the beam splitter, and the first wave plate is spaced apart and arranged at the rear end of the first polarizer and located between the first polarizer and the first galvanometer.

[0032] In one embodiment, the laser beam splitting light transmission device also includes a second polarizer and a second wave plate, the second polarizer is spaced apart at the rear end of the reflector, the second wave plate is spaced apart at the rear end of the second polarizer and is located between the second polarizer and the second galvanometer.

[0033] In one of the embodiments, when two two-dimensional scanning galvanometers are used to control the corresponding outgoing laser beams to converge, a stripe structure pattern appears on the surface of the workpiece to be processed. When three or more two-dimensional scanning galvanometers are used to control the corresponding laser beams to converge, a dot matrix structure pattern appears on the surface of the sample to be processed.

[0034] In one embodiment, the galvanometer-based laser interference micro-nano manufacturing system also includes an industrial computer and a motion controller, the industrial computer is electrically connected to the motion controller, and the motion controller is electrically connected to the laser, the first galvanometer, and the second galvanometer.

[0035] Implementing the embodiments of the present invention will have the following beneficial effects:

[0036] When the galvanometer-based laser interference micro-nano manufacturing system of the present scheme is working, the processing laser emitted by the laser will first be transmitted to the laser beam splitting light transmission device, and the laser beam splitting light transmission device will split the processing laser into at least a first coherent light beam and a second coherent light beam, and then the first coherent light beam will continue to be transmitted to the first galvanometer, and at the same time, the second coherent light beam will continue to be transmitted to the second galvanometer, so that the first coherent light beam controlled by the first galvanometer and the second coherent light beam controlled by the second galvanometer will converge on the processing platform and form an interference light spot, wherein the overlap of the scanning range of the first galvanometer and the second galvanometer The overlapping area is the processing range. When the interference spot moves to the processing partition of the surface of the workpiece to be processed, the processing range overlaps with the processing partition. The first coherent light beam and the second coherent light beam are focused on the interference spot and under the continuous control of the first galvanometer and the second galvanometer, they scan according to the preset path to complete the block pattern processing in the corresponding processing partition. On this basis, under the coordinated movement of the X-axis moving module and the Y-axis moving module, the stage is driven to translate relative to the first galvanometer and the second galvanometer, so that the interference spot moves to all the processing partitions one by one to realize the splicing processing of all the block patterns to obtain a complete pattern. Compared with the existing technology, this solution combines the characteristics of high-speed scanning of the laser beam controlled by the galvanometer with the advantages of large-area high-precision patterning of laser interference, which can realize fast and large-format laser micro-nano additive / subtractive manufacturing. At the same time, it also takes into account the characteristics of digital processing of macro structures and massive high-precision micro structures. The scanning speed and angle of the galvanometer, as well as the power and pulse width of the laser, are adjusted to control the depth, width, and characteristic size of the microstructure to achieve the best additive manufacturing quality and efficiency, thereby reducing the difficulty of micro-nano structure processing and improving the efficiency of micro-nano structure preparation. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0038] Figure 1 A schematic structural diagram of a laser interferometer micro-nano manufacturing system based on a galvanometer according to an embodiment;

[0039] Figure 2 Schematic diagram of the processing range of the galvanometer-based laser interferometer micro-nano manufacturing system;

[0040] Figure 3 Schematic diagram of the interference spot moving on the Z axis;

[0041] Figure 4 Schematic diagram of the interference spot moving on the X-axis;

[0042] Figure 5 Schematic diagram of the effect of processing a glass substrate with evenly coated light-curing resin;

[0043] Figure 6 This is a scanning electron microscope image of the glass substrate after processing of the photocurable resin;

[0044] Figure 7 Schematic diagram of large-area pattern stitching processing using a galvanometer-based laser interferometry micro-nano manufacturing system.

[0045] in:

[0046] 100. Laser interference micro-nano manufacturing system based on galvanometer; 10. Laser; 20. Laser beam splitting light transmission device; 21. Beam splitter; 22. Reflector; 23. First polarizer; 24. First wave plate; 25. Second polarizer; 26. Second wave plate; 30. First galvanometer; 40. Second galvanometer; 50. Processing platform; 51. Carrier; 52. X-axis moving module; 53. Y-axis moving module; 60. Industrial computer; 70. Motion controller; 200. First coherent light beam; 300. Second coherent light beam. DETAILED DESCRIPTION

[0047] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0048] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0050] Please refer to Figure 1, is a galvanometer-based laser interference micro-nano manufacturing system 100 described in an embodiment, which includes a laser 10 for emitting a processing laser; a laser beam splitting light transmission device 20, which is arranged opposite to the light outlet of the laser 10 and is used to split the received processing laser into at least a first coherent light beam 200 and a second coherent light beam 300; a first galvanometer 30 and a second galvanometer 40, the first galvanometer 30 and the second galvanometer 40 are arranged at the rear end of the laser beam splitting light transmission device 20, the first galvanometer 30 receives the first coherent light beam 200, and the second galvanometer 40 receives the second coherent light beam 300, and a processing platform 50 is arranged below the first galvanometer 30 and the second galvanometer 40, and the processing platform 50 includes a stage 51, an X-axis moving module 52 and a Y-axis moving module 53, and the stage 51 is used to load a workpiece to be processed, and the surface of the workpiece to be processed is divided into a plurality of processing partitions arranged in an array (i.e. Figure 7 The carrier 51 is arranged on the X-axis moving module 52, and the X-axis moving module 52 is arranged on the Y-axis moving module 53. The first coherent light beam 200 controlled by the first galvanometer 30 and the second coherent light beam 300 controlled by the second galvanometer 30 converge to form an interference spot. The interference spot processes a block pattern in each processing partition. Under the coordinated movement of the X-axis moving module 52 and the Y-axis moving module 53, the carrier 51 is driven to translate relative to the first galvanometer 30 and the second galvanometer 40, so that the interference spot moves to all the processing partitions one by one to realize the splicing processing of all the block patterns to obtain a complete pattern.

[0051] It can be understood that, through software settings, the complete pattern to be processed can be divided into multiple block patterns, and each block pattern can be assigned to each processing zone. When the interference spot completes the block pattern set in each processing zone in turn, each block pattern will automatically be spliced ​​into a complete pattern (similar to the concept of a puzzle), thereby meeting the needs of large-area, large-size pattern additive or subtractive micro-nano structure processing.

[0052] The implementation of the embodiment of the present invention will have the following beneficial effects: when the galvanometer-based laser interference micro-nano manufacturing system 100 of the present solution is working, the processing laser emitted by the laser 10 will first be transmitted to the laser beam splitting light transmission device 20, and the laser beam splitting light transmission device 20 will split the processing laser into at least a first coherent light beam 200 and a second coherent light beam 300, and then the first coherent light beam 200 will continue to be transmitted to the first galvanometer 30, and at the same time, the second coherent light beam 300 will continue to be transmitted to the second galvanometer 40, so that the first coherent light beam 200 controlled by the first galvanometer 30 and the second coherent light beam 300 controlled by the second galvanometer 40 will converge on the processing platform 50 and form an interference light spot, wherein The overlapping area of ​​the scanning range of the first galvanometer 30 and the second galvanometer 40 is the processing range. When the interference spot moves to the processing partition of the surface of the workpiece to be processed, the processing range overlaps with the processing partition. The first coherent light beam 200 and the second coherent light beam 300 are focused on the interference spot and under the continuous control of the first galvanometer 30 and the second galvanometer 40, the block pattern processing in the corresponding processing partition is completed according to the preset path scanning. On this basis, under the coordinated movement of the X-axis moving module 52 and the Y-axis moving module 53, the stage 51 is driven to translate relative to the first galvanometer 30 and the second galvanometer 40, so that the interference spot moves to all the processing partitions one by one to realize the splicing processing of all the block patterns to obtain a complete pattern. Compared with the existing technology, this solution combines the characteristics of high-speed scanning of the laser beam controlled by the galvanometer with the advantages of large-area high-precision patterning of laser interference, which can realize fast and large-scale laser micro-nano additive / subtractive manufacturing. At the same time, it also takes into account the characteristics of digital processing of macro structures and massive high-precision micro structures. The scanning speed and angle of the first galvanometer 30 and the second galvanometer 40, as well as the power and pulse width of the laser 10 are adjusted to control the depth, width, and characteristic size of the microstructure to achieve the best additive manufacturing quality and efficiency, thereby reducing the difficulty of micro-nano structure processing and improving the efficiency of micro-nano structure preparation.

[0053] It is necessary to explain that the first coherent light beam 200 and the second coherent light beam 300 of the processing laser beam emitted by the same laser 10 have the same wavelength. When irradiated onto the same plane, the first coherent light beam 200 and the second coherent light beam 300 converge to generate laser interference.

[0054] In addition, it is necessary to explain that the present invention provides the processing efficiency of the micro-nano structure by converging the first coherent light beam 200 and the second coherent light beam 300 to form an interference light spot, which has no direct correlation with the energy density of the first coherent light beam 200 and the second coherent light beam 300. In other words, according to actual needs, after the processing laser beam splitting process, the energy density of the first coherent light beam 200 may be greater than the energy density of the second coherent light beam 300, or the energy density of the second coherent light beam 300 may be greater than the energy density of the first coherent light beam 200.

[0055] In the present application, the function of the first galvanometer 30 is to control the scanning direction and speed of the corresponding first coherent light beam 200, so as to focus with the second coherent light beam 300 controlled by the second galvanometer 40, thereby forming an interference spot on the workbench plane, and achieving the purpose of marking according to the preset pattern and parameters. The function of the second galvanometer 40 is to control the scanning direction and speed of the corresponding second coherent light beam 300, so as to focus with the first coherent light beam 200 controlled by the first galvanometer 30, thereby forming an interference spot on the workbench plane, and achieving the purpose of additive manufacturing according to the preset pattern and parameters.

[0056] The present invention can select lasers 10 of different types and wavelengths, such as solid lasers, semiconductor lasers, gas lasers, etc., according to different additive and subtractive processing requirements, so as to adapt to the additive and subtractive processing requirements of different materials.

[0057] In the present application, the scanning overlap area of ​​the scanning range of the first galvanometer 30 on the stage 51 and the scanning range of the second galvanometer 40 on the stage 51 is set as the processing area S, the first galvanometer 30 and the second galvanometer 40 are set at the same height and the distance from the light outlet to the processing surface is set to H, the interference incident angle of the first related light beam 200 and the second coherent light beam 300 is set to θ, the distance between the first galvanometer 30 and the second galvanometer 40 is set to d, the distance from the light outlet of the first galvanometer 30 and the second galvanometer 40 to the galvanometer edge is set to k, and the maximum interference incident angle is set to θ1; wherein S, H, θ1, d and k are related, and:

[0058] S=2Htanθ1[2Htanθ1-(d+2k)].

[0059] In this way, the area size of each processing zone (ie, the processing area S) can be quantitatively determined, and then a plurality of processing zones can be accurately divided according to different processing patterns.

[0060] In one embodiment,

[0061]

[0062] E=P*t (2)

[0063] in,

[0064] Cd——Processing depth (an indicator to measure the degree of microstructure forming) (mm)

[0065] EC——resin critical energy (material properties) (mJ / mm 2 )

[0066] Dp——resin penetration depth (material properties) (mm)

[0067] P——Laser power (mW / mm 2 )

[0068] t——Processing time (s)

[0069] s——area of ​​a single spot (mm 2 )

[0070] Derived from formulas (1) and (2):

[0071]

[0072]

[0073] In formula (4), EC and Dp are constant values ​​of photosensitive resin, and s is the area of ​​a light spot which is also a fixed value; therefore, v is proportional to W.

[0074] For 405nm and 385nm light curing, Ec (at a spot area of ​​1mm 2 The values ​​of ) and Dp are shown in the following table:

[0075] wavelength 405nm 385nm <![CDATA[E c ]]> <![CDATA[0.05mJ / mm 2 ]]> <![CDATA[0.0247mJ / mm 2 ]]> <![CDATA[D p ]]> 0.1714mm 0.0932mm

[0076] Select the photosensitive resin under 405nm laser curing, EC, Dp fixed value, combined with the processing depth Cd of 0.01mm (10 microns), the spot area is: 1mm 2 Under the condition of , equation (4) can be simplified as:

[0077]

[0078] Unit: mm 2 / s

[0079] Based on the maximum scanning speed of the selected galvanometer of 2000mm / s, a scanning speed of 1800mm / s is proposed. According to formula (5), the power density of the curing light (405nm) is required to be 95mW / mm 2 (0.095W / mm 2 ), it takes about 8 seconds to process an area of ​​120mm*120mm.

[0080] If: the spot area is 16mm 2 (4mm*4mm square spot), then

[0081]

[0082] Based on the maximum scanning speed of the selected galvanometer of 2000 mm / s, a scanning speed of 1800 mm / s is proposed. According to formula (5), the power density of the curing light (405 nm) required is P = 5 mW / mm 2(0.005W / mm 2 ), it takes about 8 seconds to process an area of ​​120mm*120mm.

[0083] Taking the preparation of a stripe structure with a period of 2 microns (duty cycle of 1:1) as an example, compared with the traditional laser focused galvanometer scanning processing, it takes 4000 seconds to complete the processing of a 120mm*120mm sample at a scanning speed of 1800mm / s.

[0084] It can be seen that the existing technology is 500 times that of the traditional technology. In addition, it is worth noting that the cost of focusing the laser into a 1-micron spot using traditional optical components is greatly increased.

[0085] In summary, compared with traditional laser-focused galvanometer scanning processing, this technology has the advantages of high efficiency, low cost, and easy realization of micron or even sub-micron feature sizes.

[0086] In one embodiment, the X-axis moving module 52 includes a tray, an X-axis servo motor, an X-axis precision screw and an X-axis transmission nut, the X-axis servo motor is arranged on the tray and connected to the X-axis precision screw, the X-axis transmission nut is sleeved on the outside of the X-axis precision screw and connected to the carrier, and the Y-axis moving module 53 includes a Y-axis servo motor, a Y-axis precision screw and a Y-axis transmission nut, the Y-axis servo motor is connected to the Y-axis precision screw, the Y-axis transmission nut is sleeved on the outside of the Y-axis precision screw and connected to the tray. With the help of the precision screw nut for precise transmission, it can ensure that the carrier 51 drives the workpiece to be processed to accurately move in any direction and any stroke size in the XY plane, ensure that the interference spot moves accurately according to the preset path within the processing partition and between different processing partitions, and ensure the processing quality of each block pattern.

[0087] Of course, in other optional embodiments, electric push rods, cylinder sliders, etc. can also be used to replace the above-mentioned screw nuts.

[0088] See also Figure 1In an optional embodiment, the laser beam splitting light transmission device 20 includes a beam splitter 21 and a reflector 22. The beam splitter 21 is opposite to the light outlet of the laser 10. The beam splitter 21 is used to split the processing laser into a first coherent light beam 200 and a second coherent light beam 300. The first coherent light beam 200 continues to be transmitted after passing through the beam splitter 21. The reflector 22 is arranged at intervals on the opposite side of the beam splitter 21. The second coherent light beam 300 separated by reflection from the beam splitter 21 is transmitted to the reflector 22, and then continues to be transmitted after being reflected by the reflector 22; wherein the second coherent light beam 300 is transmitted in parallel with the first coherent light beam 200. When the processing laser is irradiated onto the beam splitter 21, the beam splitter 21 can split the processing laser into a first coherent light beam 200 and a second coherent light beam 300, and after being processed by the beam splitter 21 and the reflector 22 respectively, the first coherent light beam 200 and the second coherent light beam 300 can continue to be transmitted backward in a parallel relationship, thereby avoiding the first coherent light beam 200 and the second coherent light beam 300 from intersecting before reaching the first galvanometer 30 and the second galvanometer 40.

[0089] According to actual needs, the beam splitter 21 adopts any one of a beam splitter or a grating. In actual use, the beam splitter is installed and fixed by an adjustable bracket, and the mirror surface of the beam splitter faces the light outlet of the laser 10. After the processing laser is irradiated on the beam splitter, a part of the laser beam will penetrate the beam splitter to form a first coherent light beam 200, and the other part of the laser beam will be reflected on the mirror surface and irradiated on the reflector 22, and then reflected by the reflector 22 to form a second coherent light beam 300. The laser beam splitting structure is simple and has strong feasibility.

[0090] Preferably, the adjustable bracket is angularly adjustable and / or height adjustable, so that the beam splitter and the laser 10 form different emission distances and azimuth relationships, thereby obtaining different first coherent light beams 200 and second coherent light beams 300 according to actual needs.

[0091] In addition, in another optional embodiment, the laser beam splitting light transmission device 20 further includes a first polarizer 23 and a first wave plate 24, wherein the first polarizer 23 is disposed at a distance at the rear end of the beam splitter 21, and the first wave plate 24 is disposed at a distance at the rear end of the first polarizer 23 and is located between the first polarizer 23 and the first galvanometer 30. The first coherent light beam 200 is transmitted once through the first polarizer 23 and the first wave plate 24, so that the first coherent light beam 200 can be shaped to obtain a desired spot shape, and the laser energy can be more concentrated, thereby improving the transmission efficiency and quality of the first coherent light beam 200.

[0092] Furthermore, the laser beam splitting light transmission device 20 further includes a second polarizer 25 and a second wave plate 26, wherein the second polarizer 25 is disposed at a distance at the rear end of the reflector, and the second wave plate 26 is disposed at a distance at the rear end of the second polarizer 25 and is located between the second polarizer 25 and the second galvanometer 40. The second coherent light beam 300 is transmitted once through the second polarizer 25 and the second wave plate 26, so that the second coherent light beam 300 can be shaped to obtain a desired spot shape, and the laser energy can be more concentrated, thereby improving the transmission efficiency and quality of the second coherent light beam 300.

[0093] In another embodiment, the galvanometer-based laser interferometer micro-nano manufacturing system 100 further includes an industrial computer 60 and a motion controller 70, wherein the industrial computer 60 is electrically connected to the motion controller 70, and the motion controller 70 is electrically connected to the laser 10, the first galvanometer 30, and the second galvanometer 40. The industrial computer 60 is used to generate a pattern module code, which is used to generate a corresponding control code for the rotation trajectory and rotation rate of the first galvanometer 30 and the second galvanometer 40 according to the pattern and parameters input or selected by the user; the motion controller 70 is used to realize the on / off mode of the laser 10, and at the same time realize the motion control of the x-axis and y-axis galvanometer lenses in the first galvanometer 30 and the second galvanometer 40.

[0094] View Figures 2 to 6 In the present application, when the interference spot of the galvanometer-based laser interference micro-nano manufacturing system 100 moves along the Z axis, θ1 is the interference incident angle of the coherent laser LB1, θ2 is the interference incident angle of the coherent laser LB2, θ3 is the deflection angle of the first galvanometer 30, and θ4 is the deflection angle of the second galvanometer 40. As the interior angles are equal, θ1=θ3, θ2=θ4. Under the action of the first galvanometer 30 and the second galvanometer 40, the interference spot moves from point A (0, 0, z1) to point B (0, 0, z2); during the movement, θ1, θ2, θ3, and θ4 all change, and: θ1=θ2, θ3=θ4. By changing the position of the interference spot on the Z axis, the interference incident angles θ1 and θ2 can be changed, thereby realizing the periodic regulation of the micro-nano structure.

[0095] During the movement of the interference spot of the laser interference micro-nano manufacturing system 100 based on the galvanometer on the X-axis, θ1 is the interference incident angle of the coherent laser LB1, θ2 is the interference incident angle of the coherent laser LB2, θ3 is the deflection angle of the first galvanometer 30, and θ4 is the deflection angle of the first galvanometer 30. Under the action of the first galvanometer 30 and the second galvanometer 40, the interference spot moves from point C (x1, y1, z1) to point D (x2, y1, z1); during the movement, θ1, θ2, θ3, and θ4 all change, and: θ1≠θ2, θ3≠θ4, by changing the position of the interference spot on the X-axis, the interference incident angles θ1 and θ2 can be changed, thereby realizing the periodic regulation of the micro-nano structure.

[0096] In addition, the present application also provides a processing example, the laser 10 is a continuous wave laser with a wavelength of 360nm, a spot diameter of 10mm, and an output power of 60mW; the interval between the two two-dimensional galvanometers is 150mm, and the distance from the light outlet to the surface of the processed object is 540mm; the processing substrate is: a 5×5 glass sheet, on which a light-curing resin (HTL Resin) is evenly coated. After being processed by the galvanometer-based laser interference micro-nano manufacturing system, the letter "X" appears on the processing substrate, which presents a color-changing effect. Under the continuous wave laser processing with an output power of 60mW and a spot diameter of 10mm, the processing speed is: 420mm 2 / s, the writing linear speed is: 42mm / s, and its efficiency is much higher than the traditional direct laser writing speed.

[0097] In this embodiment, after being processed by the galvanometer-based laser interference micro-nano manufacturing system, the characteristic size of the interference fringes in the microscopic area framed in the upper right corner of the letter "X" on the processed substrate is about 0.76um, and the interference fringes period is about 1.3um.

[0098] like Figure 7 As shown, in this embodiment, during the large-format pattern splicing process of the galvanometer-based laser interference micro-nano manufacturing system, after the interference spot is scanned and processed in the overlapping area of ​​the two galvanometer scanning ranges (i.e., the processing area), the working platform will move in the X and Y axis directions under the control of the working control system, so that the overlapping area of ​​the two galvanometer scanning ranges (i.e., the processing area) covers area "B". Under the action of the galvanometer control system, the interference spot moves along the designed route and is processed again in area "B"; in this way, areas B, C, D, E, F, G, H, and I are processed until the entire large-format pattern is processed.

[0099] It is necessary to explain that when two two-dimensional scanning galvanometers are used to control the corresponding outgoing laser beams to converge, a stripe structure pattern appears on the surface of the workpiece to be processed. When three or more two-dimensional scanning galvanometers are used to control the corresponding laser beams to converge, a dot matrix structure pattern appears on the surface of the sample to be processed.

[0100] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A laser interferometer micro-nano manufacturing system based on a galvanometer, characterized in that: include: A laser, for emitting a processing laser; A laser beam splitting light transmission device, which is arranged opposite to the light outlet of the laser and is used to split the received processing laser into at least a first coherent light beam and a second coherent light beam; A first galvanometer and a second galvanometer, wherein the first galvanometer and the second galvanometer are arranged at the rear end of the laser beam splitting light transmission device, the first galvanometer receives the first coherent light beam, and the second galvanometer receives the second coherent light beam; A processing platform, wherein the processing platform is arranged below the first galvanometer and the second galvanometer, and the processing platform includes a carrier, an X-axis moving module and a Y-axis moving module. The carrier is used to load a workpiece to be processed, and the surface of the workpiece to be processed is divided into a plurality of processing partitions arranged in an array. The carrier is arranged on the X-axis moving module, and the X-axis moving module is arranged on the Y-axis moving module. The first coherent light beam controlled by the first galvanometer and the second coherent light beam controlled by the second galvanometer converge to form an interference light spot, and the interference light spot processes a block pattern in each processing partition. Under the coordinated movement of the X-axis moving module and the Y-axis moving module, the carrier is driven to translate relative to the first galvanometer and the second galvanometer, so that the interference light spot moves one by one to all the processing partitions to realize the splicing processing of all the block patterns to obtain a complete pattern; E=P*t (2) Among them, Cd——processing depth (mm) EC——resin critical energy (mJ / mm 2 ) Dp——resin penetration depth (mm) P——Laser power (mW / mm 2 ) t——Processing time (s) s——area of ​​a single light spot (mm 2 ) Derived from formulas (1) and (2): In formula (4), EC and Dp are constant values ​​of photosensitive resin, and s is the area of ​​a light spot which is also a fixed value; therefore, v is proportional to W.

2. The galvanometer-based laser interference micro-nano manufacturing system according to claim 1, characterized in that: The scanning overlap area of ​​the scanning range of the first galvanometer on the stage and the scanning range of the second galvanometer on the stage is set as a processing area S, the first galvanometer and the second galvanometer are arranged at the same height and the distance from the light outlet to the processing surface is set to H, the interference incident angle of the first coherent light beam and the second coherent light beam is set to θ, the distance between the first galvanometer and the second galvanometer is set to d, the distance from the light outlet of the first galvanometer and the second galvanometer to the galvanometer edge is set to k, and the maximum interference incident angle is set to θ1; Among them, S, H, θ1, d and k are related, and: S=2Htanθ1[2Htanθ1–(d+2k)].

3. The galvanometer-based laser interference micro-nano manufacturing system according to claim 1, characterized in that: The X-axis moving module includes a tray, an X-axis servo motor, an X-axis precision screw and an X-axis transmission nut, the X-axis servo motor is arranged on the tray and connected to the X-axis precision screw, the X-axis transmission nut is sleeved on the outside of the X-axis precision screw and connected to the carrier, the Y-axis moving module includes a Y-axis servo motor, a Y-axis precision screw and a Y-axis transmission nut, the Y-axis servo motor is connected to the Y-axis precision screw, the Y-axis transmission nut is sleeved on the outside of the Y-axis precision screw and connected to the tray.

4. The galvanometer-based laser interference micro-nano manufacturing system according to any one of claims 1 to 3, characterized in that: The laser beam splitting light transmission device includes a beam splitter and a reflector. The beam splitter is opposite to the light outlet of the laser. The beam splitter is used to split the processing laser into the first coherent light beam and the second coherent light beam. The first coherent light beam continues to be transmitted after passing through the beam splitter. The reflector is arranged at intervals on the opposite side of the beam splitter. The second coherent light beam separated by reflection from the beam splitter is transmitted to the reflector and then continues to be transmitted after reflection from the reflector. The second coherent light beam is transmitted in parallel with the first coherent light beam.

5. The galvanometer-based laser interference micro-nano manufacturing system according to claim 4, characterized in that: The beam splitter is a beam splitter or a grating.

6. The galvanometer-based laser interference micro-nano manufacturing system according to claim 4, characterized in that: The laser beam splitting light transmission device also includes a first polarizer and a first wave plate, wherein the first polarizer is disposed at a rear end of the beam splitter, and the first wave plate is disposed at a rear end of the first polarizer and is located between the first polarizer and the first galvanometer.

7. The galvanometer-based laser interference micro-nano manufacturing system according to claim 6, characterized in that: The laser beam splitting light transmission device also includes a second polarizer and a second wave plate, wherein the second polarizer is spaced apart at the rear end of the reflector, and the second wave plate is spaced apart at the rear end of the second polarizer and is located between the second polarizer and the second galvanometer.

8. The galvanometer-based laser interference micro-nano manufacturing system according to claim 1, characterized in that: When two two-dimensional scanning galvanometers are used to control the corresponding outgoing laser beams to converge, a stripe structure pattern appears on the surface of the workpiece to be processed. When three or more two-dimensional scanning galvanometers are used to control the corresponding laser beams to converge, a dot matrix structure pattern appears on the surface of the workpiece to be processed.

9. The galvanometer-based laser interference micro-nano manufacturing system according to claim 1, characterized in that: The galvanometer-based laser interference micro-nano manufacturing system also includes an industrial computer and a motion controller. The industrial computer is electrically connected to the motion controller, and the motion controller is electrically connected to the laser, the first galvanometer, and the second galvanometer.

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