Atomic layer deposition equipment for continuous production

Abstract

The present invention discloses an atomic layer deposition device for continuous production, and relates to the technical field of atomic layer deposition. The present invention comprises a deposition device body, a deposition chamber and an ion cleaning chamber are fixedly installed on the top of the deposition device body, the interiors of the deposition chamber and the ion cleaning chamber are connected, the bottom inner walls of the deposition chamber and the ion cleaning chamber are fixedly installed with electric slide rails, an electric sliding door is arranged between the deposition chamber and the ion cleaning chamber, and the electric sliding door is adapted to the electric slide rails. The present invention arranges a preheating component so that the heater controls the temperature of each insulation liquid tank to be consistent, the flowing heat exchange liquid adjusts the temperature of the air inlet pipe through the insulation sleeve, and when the gas is synchronously transported to each spray plate, the air inlet pipe with consistent temperature can make the gas maintain a consistent temperature during the flow, greatly reducing the influence of the temperature difference on the growth of the single atomic film deposited on the wafer surface, and ensuring the consistency of the coating quality.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic layer deposition, and in particular to an atomic layer deposition device for continuous production. Background Art

[0002] Atomic layer deposition (ALD) is a chemical vapor thin film deposition method based on an ordered, surface self-saturated reaction. During the ALD process, chemical reaction precursor gases usually enter the reaction chamber through a spray device installed on the top of the reaction chamber to undergo a thin film deposition reaction. In the traditional atomic layer deposition process, it is usually necessary to switch at least two chemical reaction precursor gases into the reaction chamber within a specific temperature field to achieve a self-saturated thin film deposition reaction on the wafer surface. In order to achieve large-scale wafer coating, atomic layer deposition production equipment currently often has storage racks in the reaction chamber to store a large number of wafers, so that multiple wafers can be deposited and coated at the same time.

[0003] When the existing atomic layer deposition mass production equipment is in use, the inside of the reaction chamber is in a high temperature state during the deposition process. Since the arrangement position of the heating element is fixed and the chemical reaction precursor gas is alternately input into the reaction chamber, the vacuum environment in the reaction chamber will be temporarily destroyed, making the vacuum degree in various parts of the reaction chamber uneven, resulting in a certain temperature gradient in various parts of the reaction chamber. Since the wafers inside the mass production equipment are generally stacked from top to bottom to save space, the temperature difference inside the reaction chamber will cause the single atomic film deposited on the surface of the wafer to grow unevenly, resulting in individual differences in the coating quality. For this reason, an atomic layer deposition equipment for continuous production is proposed. Summary of the invention

[0004] The purpose of the present invention is to solve the problem that wafers inside mass production equipment are generally stacked from top to bottom to save space, so the temperature difference inside the reaction chamber will cause uneven growth of single atomic films deposited on the surface of the wafers, resulting in individual differences in the coating quality. The present invention provides an atomic layer deposition device for continuous production.

[0005] In order to achieve the above-mentioned purpose, the present invention specifically adopts the following technical solutions:

[0006] An atomic layer deposition device for continuous production comprises a deposition device body, a deposition chamber and an ion cleaning chamber are fixedly installed on the top of the deposition device body, the interiors of the deposition chamber and the ion cleaning chamber are communicated, electric slide rails are fixedly installed on the bottom inner walls of the deposition chamber and the ion cleaning chamber, an electric slide door is arranged between the deposition chamber and the ion cleaning chamber, the electric slide door is adapted to the electric slide rail, an electric slide seat is drivenly installed on the electric slide rail, a transport shelf is fixedly installed on the top of the electric slide seat, a plurality of carrying plates evenly distributed from top to bottom are fixedly installed inside the transport shelf, gas generating chambers are fixedly installed on both sides of the deposition chamber, A gas delivery pipe is fixedly installed on one side of the gas generating chamber, one end of the gas delivery pipe extends to the interior of the deposition chamber and is fixedly installed with an air inlet pipe, a same connecting pipe is fixedly installed between any two adjacent air inlet pipes in the vertical direction, a suspension stand is fixedly installed on the bottom inner wall of the deposition chamber, a plurality of suspension rods are fixedly installed on the suspension stand and are evenly distributed from top to bottom, a spray plate is fixedly installed on one end of the suspension rod facing the ion cleaning chamber, the positions of the plurality of spray plates respectively correspond to the positions of the plurality of supporting plates, the two air inlet pipes at the same height are connected to the interior of the spray plate, and a preheating component is provided inside the deposition chamber;

[0007] The preheating component is used to heat each of the intake pipes individually so that the temperature of the gas output by the intake pipes remains consistent;

[0008] The preheating assembly includes a plurality of insulation liquid tanks respectively fixedly mounted on the inside of both sides of the deposition chamber, the plurality of insulation liquid tanks are evenly distributed from top to bottom, the positions of the plurality of insulation liquid tanks respectively correspond to the positions of the plurality of spray plates, a heater and an infusion pump are respectively arranged inside the insulation liquid tanks, two infusion tubes are fixedly mounted on one side of the insulation liquid tank, an insulation sleeve is fixedly sleeved on the air inlet pipe, one ends of the two infusion tubes on the same side extend to the inside of the insulation sleeve and are fixedly connected to each other, one end of one of the infusion tubes on the same side is connected to the output end of the infusion pump, and one end of the other infusion tube is connected to the inside of the insulation liquid tank.

[0009] Furthermore, a horizontally arranged partition is fixedly installed inside the spray plate, one end of the two air inlet pipes extends into the interior of the spray plate and is respectively located at the top and bottom of the partition, and a plurality of evenly distributed spray pipes are fixedly installed at the bottom of the spray plate, wherein the top ends of a plurality of the spray pipes pass through the partition.

[0010] Furthermore, a push-pull placement plate is provided on the top of the supporting plate, two push-pull sliders are fixedly installed on the bottom of the push-pull placement plate, and a push-pull slide groove matched with the push-pull slider is opened on the top of the supporting plate.

[0011] Furthermore, two receiving grooves are provided at the bottom of the push-pull slide, an elastic member is fixedly installed inside the receiving groove, a locking roller is rotatably installed on the top of the elastic member, and a locking groove adapted to the locking roller is provided at the bottom of the push-pull slider.

[0012] Furthermore, two side chucks are provided on the top of the carrying plate, and the two side chucks are symmetrically distributed on both sides of the push-pull placement plate, and side sliders are fixedly installed on the bottom of the side chucks, and two side slide grooves are provided on the top of the carrying plate, and the two side slide sliders are respectively slidably installed inside the two side slide grooves, and return spring rods are fixedly installed on the inner walls of the side slide grooves away from the push-pull placement plate, and the telescopic ends of the two return spring rods are respectively fixedly installed on the two side slide sliders.

[0013] Furthermore, a pull plate is fixedly installed on one side of the push-pull placement plate facing the ion cleaning chamber.

[0014] Furthermore, a clamping pad is fixedly installed on the side of the push-pull placement plate and the side clamping plate that are away from each other, and a clamping groove is provided at the bottom of the clamping pad.

[0015] Furthermore, a wheel frame is fixedly installed on one side of the push-pull placement plate away from the ion cleaning chamber, and protective wheels are rotatably installed at both ends of the wheel frame facing the two side chucks.

[0016] The beneficial effects of the present invention are as follows:

[0017] 1. The present invention sets a preheating component so that the heater controls the temperature of each insulation liquid tank to be consistent. The flowing heat exchange liquid adjusts the temperature of the air inlet pipe through the insulation sleeve. When the gas is synchronously transported to each spray plate through the air inlet pipe, the air inlet pipe with consistent temperature can keep the gas at a consistent temperature during the flow, greatly reducing the influence of temperature difference on the growth of the single atomic film deposited on the wafer surface, and ensuring the consistency of the coating quality.

[0018] 2. The present invention arranges a carrier plate and a spray plate, so that multiple wafers can be placed on each carrier plate in sequence, and the electric slide drives the transport rack and the carrier plate to carry the wafers into the deposition chamber together, and the gas generating chamber transports the reaction precursor gas to each inlet pipe, so that the gas is sprayed on the surface of each wafer through the spray plate. The arrangement of multiple spray plates enables a large number of wafers to be continuously coated, thereby realizing batch production of multiple wafers;

[0019] 3. The present invention divides the interior of the spray plate into two unconnected spaces, one above the other, by providing a partition. When the reaction gas is delivered, the two gases that are alternately input are respectively input into the two spaces of the spray plate through two air inlet pipes, and are respectively sprayed on the wafer surface through the same number of spray pipes at different positions, so that the two gases will never contact each other during the input process, effectively preventing the two gases from reacting prematurely;

[0020] 4. The present invention provides a push-pull placement tray, so that when placing wafers, the ion cleaning chamber is first opened, and each push-pull placement tray is removed from the carrier plate in turn and the wafer is placed on the push-pull placement tray, and then each push-pull placement tray loaded with wafers is re-inserted on the top of the carrier plate in turn. When the coating is completed, the push-pull placement tray connected to the wafer is taken out and disassembled together, so as to realize the rapid placement and unloading of wafers in batches;

[0021] 5. The present invention provides a positioning roller, so that when the push-pull placement tray loaded with wafers is inserted into the carrier plate, two push-pull sliders will be inserted into the push-pull slide grooves to make the push-pull placement tray slide along the push-pull slide grooves until the push-pull placement tray is located at the top center of the carrier plate, and the positioning roller that is squeezed by the push-pull sliders and shrunk in the receiving groove will pop out to the inside of the positioning groove to limit the push-pull placement tray, which can effectively prevent the push-pull placement tray from sliding when the electric slide transports the wafer, causing the wafer position to shift, thereby causing uneven coating growth;

[0022] 6. The present invention provides side chucks so that when the push-pull placement plate carries the wafer and slides on the carrier plate, the side chucks on both sides will be moved away from each other by the side edges of the wafer until the push-pull placement plate and the wafer reach the top center of the carrier plate. The side chucks will be pressed against both sides of the wafer under the elastic action of the reset spring rod, and the wafer will be fixed with the push-pull placement plate to further prevent the position of the wafer from shifting.

[0023] 7. The present invention arranges clamping pads so that the clamping pads are distributed on the circumference of the wafer, which can elastically clamp the wafer while avoiding direct contact between the wafer and the push-pull placement plate and the side chuck. When the push-pull placement plate carries the wafer to slide on the carrier plate, the protection wheels on both sides will contact the top corners of the side chucks on both sides, and then push the two side chucks open, avoiding direct contact between the wafer and the side chucks, and further preventing damage to the edge of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention;

[0025] Figure 2 It is a schematic diagram of the internal three-dimensional structure of the deposition chamber and the ion cleaning chamber of the present invention;

[0026] Figure 3It is a schematic diagram of the three-dimensional structure of the transport rack and the electric slide rail of the present invention;

[0027] Figure 4 It is a schematic diagram of the three-dimensional structure of the transport rack and the load-bearing plate of the present invention;

[0028] Figure 5 It is a schematic diagram of the three-dimensional structure of the spray plate and the suspension stand of the present invention;

[0029] Figure 6 It is a schematic diagram of the three-dimensional structure of the spray plate and the thermal insulation liquid tank of the present invention;

[0030] Figure 7 It is a schematic diagram of the internal three-dimensional structure of the spray plate of the present invention;

[0031] Figure 8 It is a schematic diagram of the three-dimensional structure of the carrying plate and the push-pull placement plate of the present invention;

[0032] Fig. 9 It is a schematic diagram of the three-dimensional structure of the top of the bearing plate of the present invention;

[0033] Fig.10 It is a schematic diagram of the three-dimensional structure of the bottom of the push-pull placement tray of the present invention;

[0034] Figure numerals: 1. Deposition equipment body; 2. Deposition chamber; 3. Ion cleaning chamber; 4. Electric slide rail; 5. Electric sliding door; 6. Electric slide seat; 7. Transport shelf; 8. Loading plate; 9. Gas generating chamber; 10. Gas supply pipe; 11. Inlet pipe; 12. Suspension stand; 13. Suspension rod; 14. Spray plate; 15. Connecting pipe; 16. Insulation liquid tank; 17. Infusion pipe; 18. Insulation sleeve; 19. Partition; 20. Spray pipe; 21. Push-pull placement plate; 22. Push-pull slider; 23. Push-pull slide groove; 24. Positioning roller; 25. Positioning groove; 26. Side chuck; 27. Reset spring rod; 28. Pad; 29. ​​Wheel frame; 30. Protection wheel; 31. Pull plate. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0036] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. In addition, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0038] In the description of the embodiments of the present invention, it should be noted that the terms "inside", "outside", "upper", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the inventive product is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0039] like Figures 1 to 10 As shown, an atomic layer deposition device for continuous production includes a deposition device body 1, a deposition chamber 2 and an ion cleaning chamber 3 are fixedly installed on the top of the deposition device body 1, and the interiors of the deposition chamber 2 and the ion cleaning chamber 3 are connected, as shown in FIG. Figure 2 As shown, the bottom inner walls of the deposition chamber 2 and the ion cleaning chamber 3 are fixedly installed with electric slide rails 4, and an electric slide door 5 is arranged between the deposition chamber 2 and the ion cleaning chamber 3, and the electric slide door 5 is adapted to the electric slide rails 4, as shown in FIG. Figure 3 As shown, an electric slide 6 is driven and installed on the electric slide rail 4, a transport shelf 7 is fixedly installed on the top of the electric slide 6, and a plurality of carrying plates 8 evenly distributed from top to bottom are fixedly installed inside the transport shelf 7. Gas generating chambers 9 are fixedly installed on both sides of the deposition chamber 2, and a gas delivery pipe 10 is fixedly installed on one side of the gas generating chamber 9, as shown in FIG. Figure 6 As shown, one end of the gas delivery pipe 10 extends to the interior of the deposition chamber 2 and is fixedly installed with an air inlet pipe 11, and a same connecting pipe 15 is fixedly installed between any two adjacent air inlet pipes 11 in the vertical direction. Figure 5As shown, a suspension stand 12 is fixedly installed on the bottom inner wall of the deposition chamber 2, and a plurality of suspension rods 13 are fixedly installed on the suspension stand 12 and are evenly distributed from top to bottom. A spray plate 14 is fixedly installed on one end of the suspension rod 13 facing the ion cleaning chamber 3. The positions of the plurality of spray plates 14 correspond to the positions of the plurality of supporting plates 8 respectively. Two air inlet pipes 11 located at the same height are connected to the inside of the spray plate 14. In this embodiment, an ion cleaning device is arranged inside the ion cleaning chamber 3 to perform ion cleaning on the wafers entering the ion cleaning chamber 3 from the outside, and then the gas inside the ion cleaning chamber 3 is extracted. The ion cleaning chamber 3 is provided with a sealing door on the outer side wall for taking and placing the wafer. The gas generating chamber 9 is provided with a gas supply control device connected to the gas supply pipe 10. The input ends of the gas supply control device are respectively connected to the reaction gas source and the nitrogen source. The deposition chamber 2 is provided with an exhaust device for discharging the residual reaction gas, reaction by-products and nitrogen and other mixed gases. The spray pipe 20 is provided with a one-way valve. The deposition chamber 2 is provided with a preheating component. When the atomic layer deposition equipment for continuous production is used, the wafers are first placed on each carrier plate 8 in sequence, the ion cleaning chamber 3 is closed so that the wafers are ion cleaned inside the ion cleaning chamber 3, and then the ion cleaning chamber 3 extracts gas to put the wafers in a vacuum environment, the electric slide door 5 is opened, and the electric slide rail 4 drives the electric slide seat 6 to move toward the deposition chamber 2, so that the transport rack 7 and the carrier plate 8 carry the wafers into the deposition chamber 2 together, and the electric slide door 5 is closed again. At this time, each spray plate 14 will be located on the top of each carrier plate 8 and the wafer, respectively, and the gas generating chamber 9 on one side is connected through the gas transmission pipe 10 and the connecting pipe 1 5. The reaction precursor gas is delivered to each inlet pipe 11, so that the gas is sprayed on the surface of each wafer through the spray plate 14. After the delivery of the reaction gas is cut off, nitrogen gas is delivered to the inside of the deposition chamber 2 for washing, and the residual mixed gas is discharged from the deposition chamber 2. The gas generating chamber 9 on the other side starts to spray another gas on the surface of the wafer to react with the previous gas and coat the wafer. The gas delivery is cut off again and nitrogen gas is delivered for washing and exhaust. The above process is repeated for multiple times to achieve a coating of a specified thickness. The arrangement of multiple spray plates 14 enables a large number of wafers to be continuously coated, thereby realizing batch production of multiple wafers.

[0040] The preheating component is used to heat each air intake pipe 11 individually so that the temperature of the gas output from the air intake pipe 11 remains consistent;

[0041] like Figure 2 As shown, the preheating assembly includes a plurality of heat preservation liquid tanks 16 respectively fixedly mounted on the inside of both sides of the deposition chamber 2, and the plurality of heat preservation liquid tanks 16 are evenly distributed from top to bottom, as shown in FIG. Figure 5As shown, the positions of the plurality of thermal insulation liquid tanks 16 correspond to the positions of the plurality of spray plates 14, and a heater and an infusion pump are disposed inside the thermal insulation liquid tanks 16. Figure 6 As shown, two infusion tubes 17 are fixedly installed on one side of the thermal insulation liquid tank 16, and the air intake pipe 11 is fixedly sleeved with an insulation sleeve 18. One end of the two infusion tubes 17 on the same side extends to the inside of the insulation sleeve 18 and is fixedly connected to each other. In the present embodiment, a section of the two infusion tubes 17 located inside the insulation sleeve 18 is in a spiral winding structure to increase the heating area of ​​the air intake pipe 11. One end of one of the infusion tubes 17 on the same side is connected to the output end of the infusion pump, and one end of the other infusion tube 17 is connected to the inside of the thermal insulation liquid tank 16. In the present embodiment, a heat exchanger for heat exchange is provided between the thermal insulation liquid tank 16 and the deposition chamber 2, so that the high temperature environment inside the deposition chamber 2 can help the heat exchange liquid inside the thermal insulation liquid tank 16 to maintain a high temperature state, thereby saving energy. Then the heat exchange liquid inside each thermal insulation liquid tank 16 is heated by the heater, and each is adjusted by fine-tuning the heat exchanger. The temperature of the heat exchange liquid inside the insulating liquid tank 16 is kept consistent; specifically, by setting a preheating component, before the gas generating chamber 9 transports the reaction gas to the deposition chamber 2, the heater inside the insulating liquid tank 16 adjusts the temperature of the heat exchange liquid inside each insulating liquid tank 16 to keep the temperature of each insulating liquid tank 16 consistent, and then the infusion pump inside the insulating liquid tank 16 transports the heat exchange liquid to the infusion pipe 17, so that the heat exchange liquid flows through the infusion pipe 17 and flows back to the insulating liquid tank 16, and the flowing heat exchange liquid adjusts the temperature of the air inlet pipe 11 through the insulating sleeve 18 to keep the temperature of each air inlet pipe 11 consistent. After the gas is synchronously transported to each spray plate 14 through the air inlet pipe 11, the air inlet pipe 11 with consistent temperature can make the gas maintain a consistent temperature during the flow and spray it on each wafer, thereby greatly reducing the influence of temperature difference on the growth of single atomic film deposited on the wafer surface, and ensuring the consistency of coating quality.

[0042] like Figure 7As shown, a horizontal partition 19 is fixedly installed inside the spray plate 14, one end of each of the two air inlet pipes 11 extends into the interior of the spray plate 14 and is located at the top and bottom of the partition 19, respectively. A plurality of evenly distributed spray pipes 20 are fixedly installed at the bottom of the spray plate 14, wherein the top ends of the plurality of spray pipes 20 penetrate the partition 19. In this embodiment, the number of the spray pipes 20 is an even number, wherein half of the spray pipes 20 are long pipes, wherein the top ends thereof penetrate the partition 19 and are connected to the space at the top of the partition 19, and the remaining half of the spray pipes 20 are long pipes, wherein the top ends thereof penetrate the partition 19 and are connected to the space at the top of the partition 19, and the remaining half of the spray pipes 20 are long pipes. The shower pipe 20 is a short tube, and its top end is located in the space at the bottom of the partition 19. Specifically, by setting the partition 19, the partition 19 divides the interior of the spray plate 14 into two upper and lower spaces that are not connected to each other. When the reaction gas is transported, the two gases that are alternately input will be respectively input into the two spaces of the spray plate 14 through the two air inlet pipes 11, and will be sprayed on the surface of the wafer through the same number of spray pipes 20 at different positions, so that the two gases will never contact each other during the input process, effectively preventing the two gases from reacting prematurely.

[0043] like Figure 8 As shown, a push-pull placement plate 21 is provided on the top of the carrying plate 8. Fig.10 As shown, two push-pull sliders 22 are fixedly installed at the bottom of the push-pull placement plate 21, and the top of the supporting plate 8 is provided with a push-pull slide groove 23 adapted to the push-pull sliders 22; specifically, by setting the push-pull placement plate 21, when the wafer is placed, the ion cleaning chamber 3 is opened first, and each push-pull placement plate 21 is removed from the supporting plate 8 in turn and the wafer is placed on the push-pull placement plate 21, and then each push-pull placement plate 21 loaded with the wafer is reinserted on the top of the supporting plate 8 in turn. When the coating is completed, the push-pull placement plate 21 connected to the wafer is taken out and disassembled together, so as to realize the rapid batch placement and unloading of wafers.

[0044] like Fig. 9 As shown, the bottom of the push-pull slide 23 is provided with two receiving grooves, an elastic member is fixedly installed inside the receiving groove, and a locking roller 24 is rotatably installed on the top of the elastic member. Fig.10As shown, the bottom of the push-pull slider 22 is provided with a locking groove 25 adapted to the locking roller 24. In this embodiment, the elastic member can be a spring, a spring sheet or a spring rod, and the locking roller 24 is rotatably installed on the top of the elastic member through a bracket; specifically, by setting the locking roller 24, when the push-pull placement plate 21 loaded with wafers is inserted into the carrier plate 8, the two push-pull sliders 22 will be inserted into the push-pull slide groove 23 to make the push-pull placement plate 21 slide along the push-pull slide groove 23 until the push-pull placement plate 21 is located at the top of the carrier plate 8. The locking roller 24 that is squeezed by the push-pull slider 22 and shrunk in the accommodating groove will pop out into the inside of the locking groove 25, limiting the push-pull placement plate 21, which can effectively prevent the push-pull placement plate 21 from sliding when the electric slide 6 transports the wafer, causing the wafer position to shift, and then causing uneven coating growth. When taking out the push-pull placement plate 21, directly pull the push-pull placement plate 21, the locking roller 24 will be pressed and rolled and shrunk again and disengaged from the locking groove 25, and the push-pull placement plate 21 will be released from the limit, so that the push-pull placement plate 21 and the wafer are taken out.

[0045] like Figure 8 As shown, two side chucks 26 are provided on the top of the carrying plate 8, and the two side chucks 26 are symmetrically distributed on both sides of the push-pull placement plate 21, and side sliders are fixedly installed on the bottom of the side chucks 26. Two side slide grooves are opened on the top of the carrying plate 8, and the two side slide blocks are respectively slidably installed in the inside of the two side slide grooves. Reset spring rods 27 are fixedly installed on the inner walls of the side slide grooves away from the push-pull placement plate 21, and the telescopic ends of the two reset spring rods 27 are respectively fixedly installed on the two side slide blocks; specifically, by arranging the side chucks 26, when the push-pull placement plate 21 carries the wafer and slides on the carrying plate 8, the side chucks 26 on both sides will be affected by the side edges of the wafer and move away from each other until the push-pull placement plate 21 and the wafer reach the central position of the top of the carrying plate 8, and the side chucks 26 will be pressed on both sides of the wafer under the elastic action of the reset spring rods 27, and cooperate with the push-pull placement plate 21 to fix the wafer, so as to further prevent the position of the wafer from shifting.

[0046] like Fig.10 As shown, a pull plate 31 is fixedly installed on one side of the push-pull placement tray 21 facing the ion cleaning chamber 3 ; specifically, by setting the pull plate 31 , the pull plate 31 can facilitate the staff to pull the push-pull placement tray 21 .

[0047] like Figure 8 As shown, a clamping pad 28 is fixedly installed on the side of the push-pull placement plate 21 and the side chuck 26 that are away from each other, and a clamping groove is opened at the bottom of the clamping pad 28; specifically, by arranging the clamping pad 28, the clamping pad 28 is distributed on the circumference of the wafer, and while the wafer is elastically clamped, direct contact between the wafer and the push-pull placement plate 21 and the side chuck 26 is avoided to prevent damage to the edge of the wafer.

[0048] like Figure 8 As shown, a wheel frame 29 is fixedly installed on one side of the push-pull placement plate 21 away from the ion cleaning chamber 3, and protective wheels 30 are rotatably installed at both ends of the wheel frame 29 facing the two side chucks 26 respectively. In the present embodiment, the positions of the two protective wheels 30 correspond to the top angle positions of the two side chucks 26; specifically, by arranging the protective wheels 30, when the push-pull placement plate 21 carries the wafer and slides on the carrier plate 8, the protective wheels 30 on both sides will contact the top angles of the side chucks 26 on both sides, thereby pushing the two side chucks 26 open, avoiding direct contact between the wafer and the side chuck 26, and further preventing damage to the wafer edge.

[0049] In summary: before gas delivery: first open the ion cleaning chamber 3, take each push-pull placement plate 21 off the carrier plate 8 in turn and put the wafer on the push-pull placement plate 21, then reinsert each push-pull placement plate 21 loaded with wafers on the top of the carrier plate 8 in turn, the positioning roller 24 that is squeezed by the push-pull slider 22 and shrinks in the receiving groove will pop out to the inside of the positioning groove 25, limit the push-pull placement plate 21, close the ion cleaning chamber 3 so that the wafer is ion cleaned inside the ion cleaning chamber 3, and then extract gas from the ion cleaning chamber 3 to put the wafer in a vacuum environment, the electric sliding door 5 is opened, and the electric slide rail 4 drives the electric slide 6 toward the sink The deposition chamber 2 moves forward, so that the transport rack 7 and the carrier plate 8 carry the wafers into the deposition chamber 2, and the electric sliding door 5 is closed again. At this time, each spray plate 14 will be located on the top of each carrier plate 8 and the wafer, respectively. The heater inside the insulation liquid tank 16 adjusts the temperature of the heat exchange liquid inside each insulation liquid tank 16 to keep the temperature of each insulation liquid tank 16 consistent. Then, the infusion pump inside the insulation liquid tank 16 transports the heat exchange liquid to the infusion pipe 17, so that the heat exchange liquid flows through the infusion pipe 17 and flows back to the insulation liquid tank 16. The flowing heat exchange liquid adjusts the temperature of the air inlet pipe 11 through the insulation sleeve 18 to keep the temperature of each air inlet pipe 11 consistent.

[0050] During gas delivery: the gas generating chamber 9 on one side delivers reaction precursor gas to each air inlet pipe 11 through the air delivery pipe 10 and the connecting pipe 15. When the gas is synchronously delivered to each spray plate 14 through the air inlet pipe 11, the air inlet pipe 11 with consistent temperature can keep the gas at a consistent temperature during the flow, so that the gas is sprayed on the surface of each wafer through the spray plate 14. After the reaction gas delivery is cut off, nitrogen is delivered to the inside of the deposition chamber 2 for washing, and the residual mixed gas is discharged from the deposition chamber 2. The gas generating chamber 9 on the other side starts to spray another gas onto the wafer surface to react with the previous gas and coat the wafer. The gas delivery is cut off again and nitrogen is delivered for washing and exhaust. The above steps are repeated many times to achieve a coating of a specified thickness.

[0051] After gas supply: when the coating is completed, the electric sliding door 5 is opened, and the electric sliding seat 6 drives the transport shelf 7 and the supporting plate 8 to carry the wafers into the ion cleaning chamber 3, and the ion cleaning chamber 3 is opened, and the push-pull placement plate 21 is directly pulled, and the positioning roller 24 will be pressed and rolled to shrink again and disengage from the positioning groove 25, and the push-pull placement plate 21 is released from the limit, and the push-pull placement plate 21 connected with the wafer is taken out and disassembled, so as to realize the rapid batch delivery and unloading of wafers.

[0052] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. An atomic layer deposition device for continuous production, characterized in that: The invention comprises a deposition device body (1), wherein a deposition chamber (2) and an ion cleaning chamber (3) are fixedly mounted on the top of the deposition device body (1), the interiors of the deposition chamber (2) and the ion cleaning chamber (3) are connected, electric slide rails (4) are fixedly mounted on the bottom inner walls of the deposition chamber (2) and the ion cleaning chamber (3), an electric slide door (5) is arranged between the deposition chamber (2) and the ion cleaning chamber (3), the electric slide door (5) is adapted to the electric slide rail (4), an electric slide seat (6) is drivenly mounted on the electric slide rail (4), a transport shelf (7) is fixedly mounted on the top of the electric slide seat (6), a plurality of carrying plates (8) evenly distributed from top to bottom are fixedly mounted inside the transport shelf (7), gas generating chambers (9) are fixedly mounted on both sides of the deposition chamber (2), and the gas generating chamber (9) A gas delivery pipe (10) is fixedly installed on one side of the deposition chamber (2), one end of the gas delivery pipe (10) extends to the interior of the deposition chamber (2) and is fixedly installed with an air inlet pipe (11), a same connecting pipe (15) is fixedly installed between any two adjacent air inlet pipes (11) in the vertical direction, a suspension stand (12) is fixedly installed on the bottom inner wall of the deposition chamber (2), a plurality of suspension rods (13) are fixedly installed on the suspension stand (12) and are evenly distributed from top to bottom, a spray plate (14) is fixedly installed on one end of the suspension rod (13) facing the ion cleaning chamber (3), the positions of the plurality of spray plates (14) respectively correspond to the positions of the plurality of support plates (8), the two air inlet pipes (11) located at the same height are connected to the interior of the spray plate (14), and a preheating component is provided inside the deposition chamber (2); The preheating component is used to heat each of the air intake pipes (11) individually, so that the temperature of the gas output from the air intake pipes (11) remains consistent; The preheating assembly comprises a plurality of thermal insulation liquid tanks (16) respectively fixedly mounted on the inside of both sides of the deposition chamber (2), the plurality of thermal insulation liquid tanks (16) being evenly distributed from top to bottom, the positions of the plurality of thermal insulation liquid tanks (16) respectively corresponding to the positions of the plurality of spray plates (14), a heater and an infusion pump being arranged inside the thermal insulation liquid tank (16), two infusion tubes (17) being fixedly mounted on one side of the thermal insulation liquid tank (16), a thermal insulation sleeve (18) being fixedly sleeved on the air inlet pipe (11), one end of the two infusion tubes (17) located on the same side extending into the inside of the thermal insulation sleeve (18) and being fixedly connected to each other, one end of one of the infusion tubes (17) located on the same side being connected to the output end of the infusion pump, and one end of the other infusion tube (17) being connected to the inside of the thermal insulation liquid tank (16).

2. The atomic layer deposition equipment for continuous production according to claim 1, characterized in that: A horizontally arranged partition (19) is fixedly mounted inside the spray plate (14), one end of each of the two air inlet pipes (11) extends into the interior of the spray plate (14) and is located at the top and bottom of the partition (19), respectively, and a plurality of evenly distributed spray pipes (20) are fixedly mounted at the bottom of the spray plate (14), wherein the top ends of the plurality of spray pipes (20) penetrate the partition (19).

3. The atomic layer deposition equipment for continuous production according to claim 1, characterized in that: The top of the supporting plate (8) is provided with a push-pull placement plate (21), the bottom of the push-pull placement plate (21) is fixedly mounted with two push-pull sliders (22), and the top of the supporting plate (8) is provided with a push-pull slide groove (23) adapted to the push-pull sliders (22).

4. The atomic layer deposition equipment for continuous production according to claim 3, characterized in that: The bottom of the push-pull slide groove (23) is provided with two receiving grooves, an elastic member is fixedly installed inside the receiving groove, a locking roller (24) is rotatably installed on the top of the elastic member, and the bottom of the push-pull slider (22) is provided with a locking groove (25) adapted to the locking roller (24).

5. The atomic layer deposition equipment for continuous production according to claim 3, characterized in that: Two side chucks (26) are arranged on the top of the bearing plate (8), and the two side chucks (26) are symmetrically distributed on both sides of the push-pull placement plate (21). The bottom of the side chucks (26) is fixedly mounted with side sliders. Two side slide grooves are provided on the top of the bearing plate (8), and the two side slide grooves are respectively slidably mounted inside the two side slide grooves. Reset spring rods (27) are fixedly mounted on the inner wall of the side slide groove away from the push-pull placement plate (21), and the telescopic ends of the two reset spring rods (27) are respectively fixedly mounted on the two side slide grooves.

6. The atomic layer deposition equipment for continuous production according to claim 3, characterized in that: A pull plate (31) is fixedly mounted on one side of the push-pull placement plate (21) facing the ion cleaning chamber (3).

7. The atomic layer deposition equipment for continuous production according to claim 5, characterized in that: A clamping pad (28) is fixedly mounted on the side of the push-pull placement plate (21) and the side clamping plate (26) that are away from each other, and a clamping groove is provided at the bottom of the clamping pad (28).

8. The atomic layer deposition equipment for continuous production according to claim 5, characterized in that: A wheel frame (29) is fixedly mounted on one side of the push-pull placement plate (21) away from the ion cleaning chamber (3), and protective wheels (30) are rotatably mounted on both ends of the wheel frame (29) facing the two side chucks (26).

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