A semiconductor CVD process thermal control method and ceramic heater thereof

Abstract

The present invention relates to the field of semiconductors, and specifically to a semiconductor CVD process heat control method and a ceramic heater thereof, which determines the operating parameters of the preheating operation based on the initial surface temperature data and the expected surface temperature data of the wafer; and constructs a heat transfer model between the ceramic heating component and the wafer during the preheating operation to adjust the application state of the preheating operation; based on the airflow characteristic data of the CVD chamber, determines the heat exchange characteristics between the wafer and the air inside the CVD chamber, thereby predicting the regional position information of the temperature drift of the wafer; based on the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition, predicts the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process, and determines the target area for the insulation operation in combination with the regional position information, thereby performing thermal control adjustment on the ceramic heating component. The present invention can achieve accurate, continuous and stable temperature control of the wafer.

Description

Technical Field

[0001] The invention relates to the field of semiconductors, and in particular to a semiconductor CVD process heat control method and a ceramic heater thereof. Background Art

[0002] Chemical Vapor Deposition (CVD) is a commonly used and important semiconductor device manufacturing process, which deposits dielectrics and metals on the wafer in sequence as required, thereby forming a stack of dielectric film layers and metal film layers on the wafer surface. Chemical vapor deposition technology specifically includes plasma enhanced chemical vapor deposition (PECVD), high-density plasma chemical vapor deposition (HDP-CVD), low-pressure chemical vapor deposition (LPCVD), etc. In particular, temperature is an important parameter in the manufacture of semiconductor devices. In order to ensure the yield rate and performance of semiconductor devices, strict and precise temperature control is required during the semiconductor device manufacturing process.

[0003] For the chemical vapor deposition process, the wafer temperature needs to be maintained within the corresponding range during the thin film deposition process. If the wafer temperature is too high or too low, it is not conducive to the deposition and bonding of dielectric particles and metal particles on the wafer surface, thereby reducing the density and thickness uniformity of the dielectric film layer and the metal film layer. For this reason, the prior art has used ceramic heaters to heat and keep the wafer warm. However, considering that the wafer has a certain thickness and a large area, the airflow formed by the argon plasma in the CVD chamber during the chemical vapor deposition process, and the thin film layer deposited on the wafer surface, it is impossible to continuously and accurately control the wafer temperature by simply controlling the heating state of the ceramic heater itself. Therefore, how to control the ceramic heater to preheat and keep the wafer warm at different stages based on the physical characteristics of the wafer itself, the airflow environment characteristics inside the CVD chamber, and the thermal interaction characteristics between the deposited thin film layer and the wafer is of great significance for accurately and continuously stabilizing the temperature of the wafer. Summary of the invention

[0004] In order to control the ceramic heater to perform different stage operations such as preheating and heat preservation of the wafer based on the physical characteristics of the wafer itself, the airflow environment characteristics inside the CVD chamber, and the thermal interaction characteristics between the deposited thin film layer and the wafer, and accurately and continuously stabilize the temperature of the wafer, the present invention provides a semiconductor CVD process thermal control method, which includes the following steps:

[0005] Acquire initial surface temperature data of the wafer, and determine operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature; construct a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation;

[0006] When the wafer is heated to the desired surface target temperature, acquiring airflow characteristic data of the CVD chamber where the wafer is located, analyzing the airflow characteristic data, and determining heat exchange characteristics between the wafer and the air inside the CVD chamber; based on the heat exchange characteristics, predicting the location information of the region where the temperature drift of the wafer occurs;

[0007] The dynamic change data of the surface temperature of the wafer in the initial stage of chemical vapor deposition is obtained, and the dynamic change data of the surface temperature is analyzed to predict the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process; based on the regional position information and the heat transfer trend characteristics, the target area for the ceramic heating component to perform insulation operation on the wafer is determined; and based on the target area, the ceramic heating component is thermally controlled and adjusted.

[0008] Preferably, the initial surface temperature data of the wafer is obtained, and based on the initial surface temperature data and the expected surface target temperature, the operation parameters of the ceramic heating component for preheating the wafer are determined; based on the physical relationship characteristics between the ceramic heating component and the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed, so as to adjust the application state of the preheating operation, specifically:

[0009] Performing global thermal infrared detection on the surface of the wafer to obtain initial surface temperature data of the wafer; wherein the initial surface temperature data includes initial temperature data of the upper surface and initial temperature data of the lower surface of the wafer; determining the temperature difference between the actual temperature of all sub-areas of the upper surface of the wafer and the expected surface target temperature based on the initial upper surface temperature data and the expected surface target temperature; and then determining the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the lower surface of the wafer by the ceramic heating component based on the lower surface initial temperature data and the temperature difference;

[0010] Based on the contact area between the ceramic heating component and the wafer and the projection position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed; based on the heat transfer model, a time domain adjustment is applied to the preheating operation so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit.

[0011] Preferably, when the wafer is heated to the desired surface target temperature, the airflow characteristic data of the CVD chamber where the wafer is located is obtained, the airflow characteristic data is analyzed to determine the heat exchange characteristics between the wafer and the air inside the CVD chamber; based on the heat exchange characteristics, the location information of the region where the temperature drift of the wafer occurs is predicted, specifically:

[0012] When the upper surface of the wafer is globally heated to the desired surface target temperature, airflow detection is performed inside the CVD chamber where the wafer is located to obtain airflow direction distribution data and airflow rate distribution data; modeling and analysis are performed on the airflow direction distribution data and the airflow rate distribution data to obtain airflow circulation motion characteristics inside the CVD chamber; based on the airflow circulation motion characteristics and the position and posture characteristics of the wafer inside the CVD chamber, the thermal interaction characteristics between the wafer and the air inside the CVD chamber are determined; wherein the thermal interaction characteristics include the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself;

[0013] The heat absorption characteristics and the heat dissipation characteristics are analyzed over time to predict the heat loss trends of all regions of the wafer within a preset future time period; based on the heat loss trends, the location information of the regions where the temperature drop drift occurs on the wafer is determined.

[0014] Preferably, the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition is obtained, and the surface temperature dynamic change data is analyzed to predict the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process, specifically:

[0015] Performing thermal infrared detection on the upper surface of the wafer in the initial stage of chemical vapor deposition to obtain temperature dynamic change data of the upper surface of the wafer; performing correlation analysis on the temperature dynamic change data and the thickness of the chemical vapor deposition film layer on the upper surface of the wafer and the thermal conductivity characteristics of the chemical vapor deposition film layer material to obtain information on the heat transfer law between the upper surface of the wafer and the chemical vapor deposition film layer;

[0016] Based on the thickness of the film layer that needs to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process, the thermal conductivity characteristics of the material, and the heat transfer law information, the heat transfer trend characteristics within the wafer during the entire chemical vapor deposition process are predicted; wherein the heat transfer trend characteristics include the trend characteristics of the change in the net heat rate transferred from the upper surface of the wafer to the chemical vapor deposition film layer.

[0017] Preferably, based on the regional position information and the heat transfer trend characteristics, a target area for the ceramic heating component to perform a heat preservation operation on the wafer is determined; and based on the target area, thermal control adjustment is performed on the ceramic heating component, specifically:

[0018] Based on the location information of the area where the temperature drop drift occurs on the wafer and the trend characteristics of the heat rate change, determine the occurrence time information corresponding to the temperature drop change of all areas of the wafer itself to less than the preset temperature threshold; based on the occurrence time information, determine the target area where the ceramic heating component performs the heat preservation operation on the wafer;

[0019] Based on the projection area of ​​the target area on the ceramic heating component, determine the heating element inside the ceramic heating component that heats the target area at the closest distance; based on the heat loss rate of the target area, adjust the current value flowing through the heating element.

[0020] In another aspect, the present invention provides a ceramic heater for thermal control of a semiconductor CVD process, the ceramic heater comprising the following modules:

[0021] A temperature detection and analysis module, used to obtain initial surface temperature data of the wafer, and determine operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature;

[0022] A preheating adjustment module, for constructing a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation;

[0023] An airflow detection and heat exchange analysis module, used for acquiring airflow characteristic data of the CVD chamber where the wafer is located when the wafer is heated to the desired surface target temperature, analyzing the airflow characteristic data, and determining the heat exchange characteristics between the wafer and the air inside the CVD chamber;

[0024] A temperature drift region prediction module, used for predicting the location information of the region where the temperature drift of the wafer occurs based on the heat exchange characteristics;

[0025] A heat transfer trend prediction module is used to obtain the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition, analyze the surface temperature dynamic change data, and predict the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process;

[0026] A heat preservation operation area determination module, used for determining a target area for the ceramic heating component to perform a heat preservation operation on the wafer based on the area position information and the heat transfer trend characteristics;

[0027] The heat preservation thermal control adjustment module is used to perform thermal control adjustment on the ceramic heating component based on the target area.

[0028] Preferably, the temperature detection and analysis module obtains initial surface temperature data of the wafer, and determines the operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature, specifically:

[0029] Performing global thermal infrared detection on the surface of the wafer to obtain initial surface temperature data of the wafer; wherein the initial surface temperature data includes initial temperature data of the upper surface and initial temperature data of the lower surface of the wafer; determining the temperature difference between the actual temperature of all sub-areas of the upper surface of the wafer and the expected surface target temperature based on the initial upper surface temperature data and the expected surface target temperature; and then determining the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the lower surface of the wafer by the ceramic heating component based on the lower surface initial temperature data and the temperature difference;

[0030] The preheating adjustment module constructs a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation, specifically:

[0031] Based on the contact area between the ceramic heating component and the wafer and the projection position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed; based on the heat transfer model, a time domain adjustment is applied to the preheating operation so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit.

[0032] Preferably, the airflow detection and heat exchange analysis module is used to obtain the airflow characteristic data of the CVD chamber where the wafer is located when the wafer is heated to the desired surface target temperature, analyze the airflow characteristic data, and determine the heat exchange characteristics between the wafer and the air inside the CVD chamber, specifically:

[0033] When the upper surface of the wafer is globally heated to the desired surface target temperature, airflow detection is performed inside the CVD chamber where the wafer is located to obtain airflow direction distribution data and airflow rate distribution data; modeling and analysis are performed on the airflow direction distribution data and the airflow rate distribution data to obtain airflow circulation motion characteristics inside the CVD chamber; based on the airflow circulation motion characteristics and the position and posture characteristics of the wafer inside the CVD chamber, the thermal interaction characteristics between the wafer and the air inside the CVD chamber are determined; wherein the thermal interaction characteristics include the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself;

[0034] The temperature drift region prediction module predicts the region location information where the temperature drift of the wafer occurs based on the heat exchange characteristics, specifically:

[0035] The heat absorption characteristics and the heat dissipation characteristics are analyzed over time to predict the heat loss trends of all regions of the wafer within a preset future time period; based on the heat loss trends, the location information of the regions where the temperature drop drift occurs on the wafer is determined.

[0036] Preferably, the heat transfer trend prediction module obtains the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition, analyzes the surface temperature dynamic change data, and predicts the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process, specifically:

[0037] Performing thermal infrared detection on the upper surface of the wafer in the initial stage of chemical vapor deposition to obtain temperature dynamic change data of the upper surface of the wafer; performing correlation analysis on the temperature dynamic change data and the thickness of the chemical vapor deposition film layer on the upper surface of the wafer and the thermal conductivity characteristics of the chemical vapor deposition film layer material to obtain information on the heat transfer law between the upper surface of the wafer and the chemical vapor deposition film layer;

[0038] Based on the thickness of the film layer that needs to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process, the thermal conductivity characteristics of the material, and the heat transfer law information, the heat transfer trend characteristics within the wafer during the entire chemical vapor deposition process are predicted; wherein the heat transfer trend characteristics include the trend characteristics of the change in the net heat rate transferred from the upper surface of the wafer to the chemical vapor deposition film layer.

[0039] Preferably, the heat preservation operation area determination module determines the target area for the ceramic heating component to perform the heat preservation operation on the wafer based on the area position information and the heat transfer trend characteristics, specifically:

[0040] Based on the location information of the area where the temperature drop drift occurs on the wafer and the trend characteristics of the heat rate change, determine the occurrence time information corresponding to the temperature drop change of all areas of the wafer itself to less than the preset temperature threshold; based on the occurrence time information, determine the target area where the ceramic heating component performs the heat preservation operation on the wafer;

[0041] The heat preservation thermal control adjustment module performs thermal control adjustment on the ceramic heating component based on the target area, specifically:

[0042] Based on the projection area of ​​the target area on the ceramic heating component, determine the heating element inside the ceramic heating component that heats the target area at the closest distance; based on the heat loss rate of the target area, adjust the current value flowing through the heating element.

[0043] Compared with the prior art, the present invention has the following beneficial effects:

[0044] During the heating and heat preservation operation of the wafer, the lower surface of the wafer is directly in contact with the ceramic heating component of the ceramic heater, and the upper surface of the wafer is subjected to chemical vapor deposition of dielectrics and metals to form dielectric film layers and metal film layers stacked on each other. The wafer itself has a certain thickness and area. When the ceramic heating component directly applies heat to the lower surface of the wafer, the heat needs to diffuse and transfer inside the wafer to reach the upper surface of the wafer. Therefore, it takes a certain amount of time for the entire wafer to be uniformly maintained at a temperature value or a smaller temperature range. In order to ensure that the upper surface of the wafer can meet the corresponding temperature requirements, it is necessary to use a ceramic heating component to preheat the wafer so that the upper surface of the wafer can reach the expected surface target temperature after the preheating operation. For this purpose, based on the initial surface temperature data of the wafer and the expected surface target temperature, the operating parameters of the ceramic heating component for preheating the wafer are determined, so as to calibrate the heat rate that the ceramic heating component needs to transfer to the wafer during the preheating operation, and provide a heating reference benchmark for the subsequent preheating operation of the ceramic heating component. In addition, based on the physical relationship characteristics between the ceramic heating component and the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed to adjust the application state of the preheating operation. Considering the spatial relationship between the upper and lower surfaces of the wafer, the heat transfer between the ceramic heating component and the wafer is globally characterized, thereby adjusting the time domain state of preheating to ensure that the wafer can be efficiently heated up in a short time to meet the temperature requirements of the subsequent chemical deposition film layer on the surface of the wafer.

[0045] When the wafer is heated to the desired surface target temperature, a film layer can be chemically deposited on the surface of the wafer. During the chemical vapor deposition process, the plasma gas flow formed by the argon gas inside the CVD chamber will enhance the heat exchange efficiency between the wafer and the internal environment of the CVD chamber. For example, the greater the flow rate of the plasma gas flow or the larger the contact area with the wafer during the flow process, the easier it is for the internal heat of the wafer to dissipate to the internal environment of the CVD chamber and be taken away, causing the temperature of the wafer to drift downward, which is not conducive to providing reliable and stable temperature conditions for chemical vapor deposition on the upper surface of the wafer. For this reason, when the wafer is heated to the desired surface target temperature, the airflow characteristic data of the CVD chamber where the wafer is located is obtained to determine the heat exchange characteristics between the wafer and the air inside the CVD chamber; and based on the heat exchange characteristics, the regional location information of the wafer temperature drift is predicted, and the temperature drift of the wafer under the influence of the plasma gas flow inside the CVD chamber is located and identified, providing an accurate basis for the subsequent regional insulation operation of the wafer.

[0046] During the chemical vapor deposition process, dielectric film layers and metal film layers are continuously deposited on the surface of the wafer. Different types of dielectrics and metals have different thermal conductivity characteristics. As the thickness of the deposited dielectric film layers and metal film layers increases, the heat of the wafer itself tends to be transferred to the deposited film layers, making it inevitable that the temperature of the wafer itself will drop. If the temperature of the wafer is detected throughout the chemical vapor deposition process, it will not only increase the workload of thermal control, but also require frequent adjustment of the working state of the ceramic heating component, which makes it easier for the ceramic heating component to fail. For this purpose, the surface temperature dynamic change data corresponding to the initial chemical vapor deposition of several film layers on the wafer are obtained, and the surface temperature dynamic change data are analyzed to predict the heat transfer trend characteristics of the wafer during the entire chemical vapor deposition process, so as to accurately predict the heat transfer changes between the wafer and the deposited surface during the entire chemical vapor deposition process. Based on the regional location information and heat transfer trend characteristics, the target area for the ceramic heating component to perform insulation operation on the wafer is determined. Starting from the airflow environment characteristics inside the CVD chamber and the thermal interaction characteristics between the deposited thin film layer and the wafer, the area inside the wafer that needs to be kept warm is accurately located, so that the ceramic heating component is thermally controlled and adjusted, so that the ceramic heating component can perform targeted heating on the area inside the wafer that needs to be kept warm, thereby achieving accurate, continuous and stable temperature control of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0048] Figure 1 The present invention provides a flow chart of a semiconductor CVD process thermal control method.

[0049] Figure 2 It is a structural diagram of a ceramic heater for thermal control of a semiconductor CVD process provided by the present invention. DETAILED DESCRIPTION

[0050] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings. It is understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only the parts related to the present invention rather than all structures are shown in the accompanying drawings. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0051] The terms "including" and "having" and any variations thereof in the present invention are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products or devices.

[0052] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present invention. The appearance of the phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0053] See also Figure 1 As shown, the present invention provides a semiconductor CVD process thermal control method, the method comprising the following steps:

[0054] S100, obtaining the initial surface temperature data of the wafer, and determining the operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature; constructing a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation.

[0055] Further, a global thermal infrared detection is performed on the surface of the wafer to obtain the initial surface temperature data of the wafer; wherein the initial surface temperature data includes the initial temperature data of the upper surface and the initial temperature data of the lower surface of the wafer; based on the initial upper surface temperature data and the expected surface target temperature, the temperature difference between the actual temperature of all sub-areas of the upper surface of the wafer and the expected surface target temperature is determined; and based on the initial lower surface temperature data and the temperature difference, the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the lower surface of the wafer by the ceramic heating component is determined;

[0056] Based on the contact area between the ceramic heating component and the wafer and the projection position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed; based on the heat transfer model, a time domain adjustment is applied to the preheating operation so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit.

[0057] During the heating and heat preservation operation of the wafer, the lower surface of the wafer is directly in contact with the ceramic heating component of the ceramic heater, and the upper surface of the wafer undergoes chemical vapor deposition of dielectrics and metals to form dielectric film layers and metal film layers stacked on each other. The wafer itself has a certain thickness and area. When the ceramic heating component directly applies heat to the lower surface of the wafer, the heat needs to diffuse and transfer inside the wafer to reach the upper surface of the wafer. Therefore, it takes a certain amount of time for the entire wafer to be uniformly maintained at a temperature value or a smaller temperature range. In order to ensure that the upper surface of the wafer can meet the corresponding temperature requirements, it is necessary to use a ceramic heating component to preheat the wafer so that the upper surface of the wafer can reach the desired surface target temperature after the preheating operation. The ceramic heating component is in direct contact with the lower surface of the wafer and transfers the heat generated by itself to the wafer, and the contact area and relative position relationship between the heating surface of the ceramic heating component and the lower surface of the wafer directly affect the heat transfer efficiency. To this end, based on the physical relationship characteristics between the ceramic heating component and the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed to adjust the application state of the preheating operation. In this way, the heat transfer state from the ceramic heating component to the wafer can be comprehensively and accurately modeled and characterized, which facilitates the subsequent adaptive adjustment of the preheating operation and ensures that the ceramic heating component meets the heating time limit requirements for the wafer.

[0058] Specifically, when the wafer is placed in the CVD chamber and before chemical vapor deposition is performed, a global thermal infrared detection is performed on the wafer surface to obtain the initial temperature data of the upper surface and the initial temperature data of the lower surface of the wafer, and the upper and lower surfaces of the wafer are subjected to differentiated global temperature detection to provide a basis for subsequent adjustment of the preheating operation of the wafer, ensuring that the heat generated by the ceramic heating component can be accurately transferred to the upper surface of the wafer through the lower surface of the wafer. Then the upper surface initial temperature data is compared with the expected surface target temperature to determine the temperature difference between the actual temperature of all sub-areas on the upper surface of the wafer and the expected surface target temperature, wherein the expected surface target temperature refers to the temperature that needs to be reached after the upper surface of the wafer is heated, and chemical vapor deposition can only be started after the upper surface of the wafer reaches the expected surface target temperature. Based on the initial temperature data and temperature difference of the lower surface of the wafer, the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the ceramic heating component on the lower surface of the wafer is determined, so that the preheating operation of all sub-areas on the lower surface of the wafer can be differentiated and executed, ensuring that all sub-areas on the lower surface of the wafer can quickly obtain sufficient heat to be transferred to the upper surface of the wafer.

[0059] In addition, based on the physical relationship characteristics between the ceramic heating component and the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed to adjust the application state of the preheating operation, consider the spatial relationship between the upper and lower surfaces of the wafer, and globally characterize the heat transfer between the ceramic heating component and the wafer, thereby adjusting the time domain state of preheating to ensure that the wafer can be efficiently heated in a short time to meet the temperature requirements of the subsequent chemical deposition film layer on the upper surface of the wafer. Specifically, based on the contact area between the ceramic heating component and the wafer and the projected position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed, so that the heat generated by all heating elements such as the resistance heating wire inside the ceramic heating component to the wafer can be accurately and reliably characterized. The construction of the heat transfer model belongs to the conventional technical means in this field and will not be described in detail here. Based on the heat transfer model, the preheating operation is adjusted in the time domain so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit. The time domain adjustment may be, but is not limited to, adjusting the amount of heat transferred to the wafer by the ceramic heating component in different time periods during the preheating operation, and ensuring that the average heat transfer rate during the entire preheating operation is consistent with the aforementioned determined average heat transfer rate. This ensures that the heat generated by the ceramic heating component can be transferred to the wafer with minimal loss rate, thereby improving the heating efficiency inside the wafer.

[0060] S200, when the wafer is heated to the desired surface target temperature, the airflow characteristic data of the CVD chamber where the wafer is located is obtained, the airflow characteristic data is analyzed to determine the heat exchange characteristics between the wafer and the air inside the CVD chamber; based on the heat exchange characteristics, the location information of the area where the wafer temperature drift occurs is predicted.

[0061] Furthermore, when the upper surface of the wafer is globally heated to the desired surface target temperature, the airflow inside the CVD chamber where the wafer is located is detected to obtain airflow direction distribution data and airflow rate distribution data; the airflow direction distribution data and the airflow rate distribution data are modeled and analyzed to obtain the airflow circulation motion characteristics inside the CVD chamber; based on the airflow circulation motion characteristics and the position and posture characteristics of the wafer inside the CVD chamber, the thermal interaction characteristics between the wafer and the air inside the CVD chamber are determined; wherein the thermal interaction characteristics include the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself;

[0062] The time evolution analysis of heat absorption and heat dissipation characteristics is performed to predict the heat loss trend of all areas of the wafer itself within a preset future time period; based on the heat loss trend, the location information of the area where the temperature drop drift occurs on the wafer is determined.

[0063] When the wafer is heated to the desired surface target temperature, a film layer can be chemically deposited on the surface of the wafer. During the chemical vapor deposition process, the plasma gas flow formed by the argon gas inside the CVD chamber will enhance the heat exchange efficiency between the wafer and the internal environment of the CVD chamber. For example, the greater the flow rate of the plasma gas flow or the larger the contact area with the wafer during the flow, the easier it is for the heat inside the wafer to dissipate to the internal environment of the CVD chamber and be taken away, causing the temperature of the wafer to drift downward, which is not conducive to providing reliable and stable temperature conditions for chemical vapor deposition on the upper surface of the wafer.

[0064] During the heat preservation operation of the wafer, the heat dissipation effect of the plasma airflow in the CVD chamber on the wafer needs to be considered. To this end, the airflow is detected inside the CVD chamber where the wafer is located to obtain the airflow direction distribution data and airflow rate distribution data; the airflow direction distribution data and airflow rate distribution data are modeled and analyzed to obtain the airflow circulation movement characteristics inside the CVD chamber, and the thermal interaction characteristics between the wafer and the air inside the CVD chamber (composed of argon or other inert gases) are determined in combination with the position and posture characteristics of the wafer inside the CVD chamber, so as to accurately quantify the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself and the air inside the CVD chamber.

[0065] The time evolution of the heat absorption and heat dissipation characteristics is then analyzed to predict the heat loss trends of all regions of the wafer within a preset future time period. Based on the heat loss trend, the temperature drop drift of the wafer under the influence of the plasma gas flow inside the CVD chamber is located and identified, providing an accurate basis for the subsequent insulation operation of the wafer in different areas, ensuring that the heat generated by the ceramic heater can be accurately transmitted to the area of ​​the wafer where the temperature drop drift occurs, and the corresponding area can be insulated in time to prevent the temperature drop drift area from gradually expanding inside the wafer.

[0066] S300, obtaining the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition, analyzing the surface temperature dynamic change data, and predicting the heat transfer trend characteristics of the wafer during the entire chemical vapor deposition process; based on the regional position information and the heat transfer trend characteristics, determining the target area for the ceramic heating component to perform insulation operation on the wafer; and then based on the target area, adjusting the thermal control of the ceramic heating component.

[0067] Furthermore, thermal infrared detection is performed on the upper surface of the wafer at the initial stage of chemical vapor deposition to obtain temperature dynamic change data on the upper surface of the wafer; correlation analysis is performed on the temperature dynamic change data, the thickness of the chemical vapor deposition film layer on the upper surface of the wafer, and the thermal conductivity characteristics of the chemical vapor deposition film layer material to obtain information on the heat transfer law between the upper surface of the wafer and the chemical vapor deposition film layer;

[0068] Based on the thickness of the film layer that needs to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process, the thermal conductivity characteristics of the material, and the heat transfer law information, the heat transfer trend characteristics within the wafer during the entire chemical vapor deposition process are predicted; among which, the heat transfer trend characteristics include the trend characteristics of the change in the net heat transfer rate from the upper surface of the wafer to the chemical vapor deposition film layer.

[0069] Further, based on the location information of the area where the temperature drop drift occurs and the trend characteristics of the heat rate change, the occurrence time information corresponding to the temperature drop change of all areas of the wafer itself to less than the preset temperature threshold is determined; based on the occurrence time information, the target area where the ceramic heating component performs the heat preservation operation on the wafer is determined;

[0070] Based on the projection area of ​​the target area on the ceramic heating component, the heating element corresponding to the closest distance heating to the target area is determined inside the ceramic heating component; based on the heat loss rate of the target area, the current value flowing through the heating element is adjusted.

[0071] During the chemical vapor deposition process, dielectric film layers and metal film layers are continuously deposited on the surface of the wafer. Different types of dielectrics and metals have different thermal conductivity characteristics. As the thickness of the deposited dielectric film layer and metal film layer increases, the heat of the wafer itself tends to be transferred to the deposited film layer, making the temperature of the wafer itself inevitably drop. If the temperature of the wafer is detected throughout the chemical vapor deposition process, it will not only increase the workload of thermal control, but also require frequent adjustment of the working state of the ceramic heating component, which is more likely to cause the ceramic heating component to malfunction.

[0072] When the film layer deposited by chemical vapor deposition on the upper surface of the wafer reaches a certain data and thickness, the heat transfer trend between the wafer and the film layer deposited on its upper surface will gradually show a stable regularity. To this end, it is only necessary to obtain the surface temperature dynamic change data corresponding to the initial stage of chemical vapor deposition of several film layers deposited by the wafer at the beginning, and analyze the surface temperature dynamic change data to fully and accurately predict the heat transfer trend characteristics of the wafer during the entire chemical vapor deposition process, thereby accurately characterizing the heat transfer changes between the wafer and the deposited surface during the entire chemical vapor deposition process. Specifically, thermal infrared detection is performed on the upper surface of the wafer in the initial stage of chemical vapor deposition to obtain the temperature dynamic change data on the upper surface of the wafer; the temperature dynamic change data and the thickness of the chemical vapor deposition film layer on the upper surface of the wafer and the thermal conductivity characteristics of the chemical vapor deposition film layer material are correlated and analyzed to obtain the heat transfer law information between the upper surface of the wafer and the chemical vapor deposition film layer; wherein, the thermal conductivity characteristics of the chemical vapor deposition film layer material can be but are not limited to the thermal conductivity of the material. Combined with the thickness of the film layer that needs to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process and the thermal conductivity characteristics of the material, the changing trend characteristics of the net heat transfer rate from the upper surface of the wafer to the chemical vapor deposition film layer are predicted.

[0073] In addition, based on the location information of the area where the temperature of the wafer drops and the trend characteristics of the heat rate change, the occurrence time information corresponding to the temperature drop of all areas of the wafer itself is determined to be less than the preset temperature threshold. If the occurrence time point contained in the occurrence time information is before the preset deadline time point, the area corresponding to the occurrence time information is determined as the target area for the ceramic heating component to perform heat preservation operation on the wafer, thereby identifying and locating all target areas inside the wafer that need to perform heat preservation operation. Based on the projection area range of the target area on the ceramic heating component, the heating element corresponding to the closest distance heating of the target area inside the ceramic heating component is determined, so that the heat generated by the heating element can be transmitted to the corresponding target area at the shortest distance, avoiding large heat loss during the transmission process, and improving the heat preservation efficiency of the target area. Based on the heat loss rate of the target area, the current value flowing through the heating element is adjusted. For example, when the heat loss rate of the target area is greater, the current value flowing through the heating element is adjusted to a larger value, so that the heat generated by the heating element can make up for the heat loss gap of the target area. In this way, based on the airflow environment characteristics inside the CVD chamber and the thermal interaction characteristics between the deposited thin film layer and the wafer, the area inside the wafer that needs to be kept warm is accurately located, so that the ceramic heating component can be thermally controlled and adjusted, so that the ceramic heating component can perform targeted heating on the area inside the wafer that needs to be kept warm, thereby achieving accurate, continuous and stable temperature control of the wafer.

[0074] See also Figure 2 As shown, the present invention provides a ceramic heater for thermal control of a semiconductor CVD process, the ceramic heater comprising the following modules:

[0075] The temperature detection and analysis module is used to obtain the initial surface temperature data of the wafer, and determine the operation parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature;

[0076] A preheating adjustment module is used to construct a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation;

[0077] The airflow detection and heat exchange analysis module is used to obtain the airflow characteristic data of the CVD chamber where the wafer is located when the wafer is heated to the desired surface target temperature, analyze the airflow characteristic data, and determine the heat exchange characteristics between the wafer and the air inside the CVD chamber;

[0078] A temperature drift region prediction module is used to predict the location information of the region where the temperature drift of the wafer occurs based on the heat exchange characteristics;

[0079] The heat transfer trend prediction module is used to obtain the dynamic change data of the surface temperature of the wafer in the initial stage of chemical vapor deposition, analyze the dynamic change data of the surface temperature, and predict the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process;

[0080] A heat preservation operation area determination module is used to determine the target area for the ceramic heating component to perform heat preservation operation on the wafer based on the area location information and the heat transfer trend characteristics;

[0081] The heat preservation thermal control adjustment module is used to adjust the thermal control of the ceramic heating component based on the target area.

[0082] Furthermore, the temperature detection and analysis module obtains the initial surface temperature data of the wafer, and determines the operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature, specifically:

[0083] Performing global thermal infrared detection on the surface of the wafer to obtain initial surface temperature data of the wafer; wherein the initial surface temperature data includes initial temperature data of the upper surface and initial temperature data of the lower surface of the wafer; determining the temperature difference between the actual temperature of all sub-areas of the upper surface of the wafer and the expected surface target temperature based on the initial upper surface temperature data and the expected surface target temperature; and determining the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the lower surface of the wafer by the ceramic heating component based on the lower surface initial temperature data and the temperature difference;

[0084] The preheating adjustment module constructs a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation, specifically:

[0085] Based on the contact area between the ceramic heating component and the wafer and the projection position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed; based on the heat transfer model, a time domain adjustment is applied to the preheating operation so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit.

[0086] Furthermore, the airflow detection and heat exchange analysis module is used to obtain the airflow characteristic data of the CVD chamber where the wafer is located when the wafer is heated to the desired surface target temperature, analyze the airflow characteristic data, and determine the heat exchange characteristics between the wafer and the air inside the CVD chamber, specifically:

[0087] When the upper surface of the wafer is globally heated to the desired surface target temperature, the airflow inside the CVD chamber where the wafer is located is detected to obtain airflow direction distribution data and airflow rate distribution data; the airflow direction distribution data and airflow rate distribution data are modeled and analyzed to obtain the airflow circulation motion characteristics inside the CVD chamber; based on the airflow circulation motion characteristics and the position and posture characteristics of the wafer inside the CVD chamber, the thermal interaction characteristics between the wafer and the air inside the CVD chamber are determined; wherein the thermal interaction characteristics include the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself;

[0088] The temperature drift area prediction module predicts the location information of the area where the temperature drift occurs on the wafer based on the heat exchange characteristics, specifically:

[0089] The time evolution analysis of heat absorption and heat dissipation characteristics is performed to predict the heat loss trend of all areas of the wafer itself within a preset future time period; based on the heat loss trend, the location information of the area where the temperature drop drift occurs on the wafer is determined.

[0090] Furthermore, the heat transfer trend prediction module obtains the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition, analyzes the surface temperature dynamic change data, and predicts the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process, specifically:

[0091] Thermal infrared detection is performed on the upper surface of the wafer at the initial stage of chemical vapor deposition to obtain temperature dynamic change data on the upper surface of the wafer; correlation analysis is performed on the temperature dynamic change data, the thickness of the chemical vapor deposition film layer on the upper surface of the wafer, and the thermal conductivity characteristics of the chemical vapor deposition film layer material to obtain information on the heat transfer law between the upper surface of the wafer and the chemical vapor deposition film layer;

[0092] Based on the thickness of the film layer that needs to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process, the thermal conductivity characteristics of the material, and the heat transfer law information, the heat transfer trend characteristics within the wafer during the entire chemical vapor deposition process are predicted; among which, the heat transfer trend characteristics include the trend characteristics of the change in the net heat transfer rate from the upper surface of the wafer to the chemical vapor deposition film layer.

[0093] Furthermore, the heat preservation operation area determination module determines the target area for the ceramic heating component to perform heat preservation operation on the wafer based on the area location information and the heat transfer trend characteristics, specifically:

[0094] Based on the location information of the area where the temperature drop drift occurs and the trend characteristics of the heat rate change, determine the occurrence time information corresponding to the temperature drop change of all areas of the wafer itself to less than the preset temperature threshold; based on the occurrence time information, determine the target area where the ceramic heating component performs the heat preservation operation on the wafer;

[0095] The insulation thermal control adjustment module adjusts the thermal control of the ceramic heating component based on the target area, specifically:

[0096] Based on the projection area of ​​the target area on the ceramic heating component, the heating element corresponding to the closest distance heating to the target area is determined inside the ceramic heating component; based on the heat loss rate of the target area, the current value flowing through the heating element is adjusted.

[0097] The operation and effect of the semiconductor CVD process thermally controlled ceramic heater of the present invention are corresponding to and consistent with the above-mentioned semiconductor CVD process thermally controlled method, and the semiconductor CVD process thermally controlled ceramic heater will not be repeated here.

[0098] Through the description of the above implementation methods, technicians in this field can clearly understand that each implementation method can be implemented by adding a necessary general hardware platform, and of course can also be implemented by combining hardware and software. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a computer product, and the present invention can be in the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0099] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it, and other embodiments may also be used. Although the present invention has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor CVD process thermal control method, characterized in that: The method comprises the following steps: Acquire initial surface temperature data of the wafer, and determine operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature; construct a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation; When the wafer is heated to the desired surface target temperature, the airflow characteristic data of the CVD chamber where the wafer is located is obtained, and the airflow characteristic data is analyzed to determine the heat exchange characteristics between the wafer and the air inside the CVD chamber; based on the heat exchange characteristics, the location information of the region where the temperature drift of the wafer occurs is predicted, which is specifically: When the upper surface of the wafer is globally heated to the desired surface target temperature, airflow detection is performed inside the CVD chamber where the wafer is located to obtain airflow direction distribution data and airflow rate distribution data; modeling and analysis are performed on the airflow direction distribution data and the airflow rate distribution data to obtain airflow circulation motion characteristics inside the CVD chamber; based on the airflow circulation motion characteristics and the position and posture characteristics of the wafer inside the CVD chamber, the thermal interaction characteristics between the wafer and the air inside the CVD chamber are determined; wherein the thermal interaction characteristics include the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself; Performing a time evolution analysis on the heat absorption characteristics and the heat dissipation characteristics to predict the heat loss trends of all regions of the wafer within a preset future time period; determining the location information of the region where the temperature drop drift occurs on the wafer based on the heat loss trend; The surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition is obtained, and the surface temperature dynamic change data is analyzed to predict the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process, which is specifically: Performing thermal infrared detection on the upper surface of the wafer in the initial stage of chemical vapor deposition to obtain temperature dynamic change data of the upper surface of the wafer; performing correlation analysis on the temperature dynamic change data and the thickness of the chemical vapor deposition film layer on the upper surface of the wafer and the thermal conductivity characteristics of the chemical vapor deposition film layer material to obtain information on the heat transfer law between the upper surface of the wafer and the chemical vapor deposition film layer; Based on the thickness of the film layer to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process, the thermal conductivity characteristics of the material, and the heat transfer law information, the heat transfer trend characteristics within the wafer during the entire chemical vapor deposition process are predicted; wherein the heat transfer trend characteristics include the trend characteristics of the change in the net heat transfer rate from the upper surface of the wafer to the chemical vapor deposition film layer; Based on the regional position information and the heat transfer trend characteristics, a target area for the ceramic heating component to perform heat preservation operation on the wafer is determined; and based on the target area, thermal control adjustment is performed on the ceramic heating component.

2. The method according to claim 1, characterized in that The initial surface temperature data of the wafer is obtained, and based on the initial surface temperature data and the expected surface target temperature, the operation parameters of the ceramic heating component for preheating the wafer are determined; based on the physical relationship characteristics between the ceramic heating component and the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed, so as to adjust the application state of the preheating operation, specifically: Performing global thermal infrared detection on the surface of the wafer to obtain initial surface temperature data of the wafer; wherein the initial surface temperature data includes initial temperature data of the upper surface and initial temperature data of the lower surface of the wafer; determining the temperature difference between the actual temperature of all sub-areas of the upper surface of the wafer and the expected surface target temperature based on the initial upper surface temperature data and the expected surface target temperature; and then determining the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the lower surface of the wafer by the ceramic heating component based on the lower surface initial temperature data and the temperature difference; Based on the contact area between the ceramic heating component and the wafer and the projection position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed; based on the heat transfer model, a time domain adjustment is applied to the preheating operation so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit.

3. The method according to claim 1, characterized in that: Based on the regional position information and the heat transfer trend characteristics, a target area for the ceramic heating component to perform a heat preservation operation on the wafer is determined; and based on the target area, thermal control adjustment is performed on the ceramic heating component, specifically: Based on the location information of the region where the temperature drop drift occurs on the wafer and the trend characteristics of the heat rate change, determine the occurrence time information corresponding to the temperature drop change of all regions of the wafer itself to less than a preset temperature threshold; Based on the occurrence time information, determining a target area for the ceramic heating component to perform a heat preservation operation on the wafer; Based on the projection area of ​​the target area on the ceramic heating component, determine the heating element inside the ceramic heating component that heats the target area at the closest distance; based on the heat loss rate of the target area, adjust the current value flowing through the heating element.

4. A ceramic heater for thermal control of semiconductor CVD process, characterized in that: The ceramic heater includes the following modules: A temperature detection and analysis module, used to obtain initial surface temperature data of the wafer, and determine operating parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature; A preheating adjustment module, for constructing a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation; The airflow detection and heat exchange analysis module is used to obtain the airflow characteristic data of the CVD chamber where the wafer is located when the wafer is heated to the desired surface target temperature, analyze the airflow characteristic data, and determine the heat exchange characteristics between the wafer and the air inside the CVD chamber, which is specifically: When the upper surface of the wafer is globally heated to the desired surface target temperature, airflow detection is performed inside the CVD chamber where the wafer is located to obtain airflow direction distribution data and airflow rate distribution data; modeling and analysis are performed on the airflow direction distribution data and the airflow rate distribution data to obtain airflow circulation motion characteristics inside the CVD chamber; based on the airflow circulation motion characteristics and the position and posture characteristics of the wafer inside the CVD chamber, the thermal interaction characteristics between the wafer and the air inside the CVD chamber are determined; wherein the thermal interaction characteristics include the heat absorption characteristics and heat dissipation characteristics of all regions of the wafer itself; The temperature drift region prediction module is used to predict the region location information where the temperature drift of the wafer occurs based on the heat exchange characteristics, which is specifically: Performing a time evolution analysis on the heat absorption characteristics and the heat dissipation characteristics to predict the heat loss trends of all regions of the wafer within a preset future time period; determining the location information of the region where the temperature drop drift occurs on the wafer based on the heat loss trend; The heat transfer trend prediction module is used to obtain the surface temperature dynamic change data of the wafer in the initial stage of chemical vapor deposition, analyze the surface temperature dynamic change data, and predict the heat transfer trend characteristics of the wafer in the entire chemical vapor deposition process, which is specifically: Performing thermal infrared detection on the upper surface of the wafer in the initial stage of chemical vapor deposition to obtain temperature dynamic change data of the upper surface of the wafer; performing correlation analysis on the temperature dynamic change data and the thickness of the chemical vapor deposition film layer on the upper surface of the wafer and the thermal conductivity characteristics of the chemical vapor deposition film layer material to obtain information on the heat transfer law between the upper surface of the wafer and the chemical vapor deposition film layer; Based on the thickness of the film layer to be deposited on the upper surface of the wafer during the entire chemical vapor deposition process, the thermal conductivity characteristics of the material, and the heat transfer law information, the heat transfer trend characteristics within the wafer during the entire chemical vapor deposition process are predicted; wherein the heat transfer trend characteristics include the trend characteristics of the change in the net heat transfer rate from the upper surface of the wafer to the chemical vapor deposition film layer; A heat preservation operation area determination module, used for determining a target area for the ceramic heating component to perform a heat preservation operation on the wafer based on the area position information and the heat transfer trend characteristics; The heat preservation thermal control adjustment module is used to perform thermal control adjustment on the ceramic heating component based on the target area.

5. The ceramic heater according to claim 4, characterized in that: The temperature detection and analysis module obtains the initial surface temperature data of the wafer, and determines the operation parameters of the ceramic heating component for preheating the wafer based on the initial surface temperature data and the expected surface target temperature, specifically: Performing global thermal infrared detection on the surface of the wafer to obtain initial surface temperature data of the wafer; wherein the initial surface temperature data includes initial temperature data of the upper surface and initial temperature data of the lower surface of the wafer; determining the temperature difference between the actual temperature of all sub-areas of the upper surface of the wafer and the expected surface target temperature based on the initial upper surface temperature data and the expected surface target temperature; and then determining the average heat transfer rate of all sub-areas of the lower surface corresponding to the preheating operation of the lower surface of the wafer by the ceramic heating component based on the lower surface initial temperature data and the temperature difference; The preheating adjustment module constructs a heat transfer model between the ceramic heating component and the wafer during the preheating operation based on the physical relationship characteristics between the ceramic heating component and the wafer, so as to adjust the application state of the preheating operation, specifically: Based on the contact area between the ceramic heating component and the wafer and the projection position of the heating element inside the ceramic heating component on the lower surface of the wafer, a heat transfer model between the ceramic heating component and the wafer during the preheating operation is constructed; based on the heat transfer model, a time domain adjustment is applied to the preheating operation so that all sub-areas on the upper surface of the wafer can reach the desired surface target temperature within a preset time limit.

6. The ceramic heater according to claim 4, characterized in that: The heat preservation operation area determination module determines the target area for the ceramic heating component to perform the heat preservation operation on the wafer based on the area position information and the heat transfer trend characteristics, specifically: Based on the location information of the region where the temperature drop drift occurs on the wafer and the trend characteristics of the heat rate change, determine the occurrence time information corresponding to the temperature drop change of all regions of the wafer itself to less than a preset temperature threshold; Based on the occurrence time information, determining a target area for the ceramic heating component to perform a heat preservation operation on the wafer; The heat preservation thermal control adjustment module performs thermal control adjustment on the ceramic heating component based on the target area, specifically: Based on the projection area of ​​the target area on the ceramic heating component, determine the heating element inside the ceramic heating component that heats the target area at the closest distance; based on the heat loss rate of the target area, adjust the current value flowing through the heating element.

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