A thermal simulation method for electronic equipment and related equipment

Abstract

The present invention proposes a thermal simulation method for electronic equipment and related equipment, the method comprising the following steps: constructing a geometric model of the electronic equipment; meshing the geometric model; setting material parameters and convection boundary conditions of the geometric model; setting temperature observation points and heat sources; constructing a stiffness matrix [K] and a mass matrix [M] of the geometric model according to the meshing, material properties and convection boundary conditions of the geometric model, and calculating a load vector {B} according to the heat source; calculating and obtaining a system response function matrix [H(s)] of the geometric model according to [K], [M] and {B}; performing an inverse Laplace transform on the system response function matrix [H(s)] to obtain a time domain system response function matrix [H(t)]; setting a transient power vector {P(t)} of each heat source according to an application scenario; convolving [H(t)] and {P(t)} to obtain and output the instantaneous temperature {T(t)} of each observation point. The present invention can simultaneously obtain the instantaneous temperature of each observation point of the electronic equipment under different heat source powers in a certain application scenario, thereby improving the simulation efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of computer-aided simulation, and in particular to a thermal simulation method for electronic equipment and related equipment. Background Art

[0002] Nowadays, electronic devices are developing rapidly, and users have higher and higher performance requirements for electronic devices, such as faster processing speed, lower power consumption, longer battery life, etc. The integration and complexity of electronic devices are increasing, which makes the heat generated by electronic devices in the operation process increase sharply, and puts higher requirements on thermal management.

[0003] Transient thermal simulation is a technology that simulates the thermal behavior of electronic devices in a very short time (such as seconds to minutes) through mathematical models and computer technology. This technology is mainly based on the basic principles of fluid mechanics and heat transfer, and evaluates and optimizes the heat dissipation design of mobile phones through numerical calculations and image display. Compared with the traditional thermal design method of verifying the heat dissipation effect through the production and testing of multiple physical prototypes, transient thermal simulation can predict the temperature distribution and heat flow of electronic devices under extreme or transient working conditions during the design stage, and timely discover and optimize the heat dissipation design, thereby avoiding performance degradation or damage of the equipment due to overheating, helping to improve product reliability and extend the life of the entire electronic device. However, electronic devices require a corresponding number of transient simulations in different application scenarios. The transient thermal simulation method of existing EDA software needs to be reset and numerically calculated each time the simulation is performed, which is too time-consuming and has a low thermal transient simulation rate. Summary of the invention

[0004] The purpose of the present invention is to provide a thermal simulation method and related equipment for electronic equipment to solve the above-mentioned problems. The instantaneous temperature of each observation point of the electronic equipment under different transient heat source powers in a certain application scenario can be obtained at one time, thereby improving the simulation efficiency while meeting the requirements of the number of transient simulations.

[0005] The present invention provides a thermal simulation method for electronic equipment, comprising the following steps:

[0006] Construct geometric models of electronic devices;

[0007] Meshing the geometric model;

[0008] Set the material parameters and convection boundary conditions of the geometric model;

[0009] Set the temperature observation point and heat source, each observation point corresponds to a node of the grid;

[0010] Construct finite element matrix: Construct the stiffness matrix [K] and mass matrix [M] of the geometric model according to the mesh, material properties and convection boundary conditions of the geometric model, and calculate the load vector {B} according to the heat source;

[0011] According to the stiffness matrix [K], mass matrix [M] and load vector {B}, the system response function matrix [H(s)] of the geometric model is obtained through finite element analysis calculation;

[0012] Perform an inverse Laplace transform on the system response function matrix [H(s)] to obtain the time domain system response function matrix [H(t)];

[0013] Set the transient power vector {P(t)} of each heat source according to the application scenario;

[0014] Convolve [H(t)] and {P(t)} to obtain and output the instantaneous temperature {T(t)} of each observation point.

[0015] In one embodiment, the material parameters include thermal conductivity, density, and specific heat capacity, and the convection boundary conditions include the convection heat transfer coefficient of the outer surface of the geometric model and the fluid environment temperature.

[0016] In one embodiment, data of the stiffness matrix [K] and the mass matrix [M] are both stored in the form of sparse matrices.

[0017] In one embodiment, the transient power vector {P(t)} of each heat source is:

[0018] ;

[0019] Where m is the number of heat source groups, {P(t)} is an m-dimensional vector, and p i (t) is the power function of the i-th group of heat sources.

[0020] In one embodiment, the calculation formula of the instantaneous temperature {T(t)} of each observation point is: {T(t)}=[H(t)]*{P(t)}.

[0021] In one embodiment, the instantaneous temperature {T(t)} of each observation point is an n-dimensional vector, where n is the number of observation points, and the expression is:

[0022] .

[0023] In one embodiment, the instantaneous temperature {T(t)} of each observation point is expressed as an instantaneous temperature curve graph of each observation point.

[0024] The present invention further provides a computer device, comprising a memory, a processor and a computer program stored in the memory, wherein the processor executes the computer program to implement the thermal simulation method of the electronic device as described above.

[0025] The present invention further provides a computer storage medium, on which a computer program is stored. When the computer program is executed by a processor, the thermal simulation method of the electronic device as described above is implemented.

[0026] The present invention also provides a computer program product, comprising a computer program, and when the computer program is executed by a processor, the thermal simulation method of the electronic device as described above is implemented.

[0027] Compared with the prior art, the thermal simulation method of electronic equipment and related equipment of the present invention have the following beneficial effects:

[0028] 1) The present invention is based on a thermal circuit simulation method. By extracting the system response function matrix [H(s)] of the electronic device through the simulation software and setting the heat source power {P(t)} of the electronic device in different application scenarios, the transient temperature {T(t)} of each observation point of the electronic device in a certain application scenario can be simulated and calculated at one time, thereby improving the simulation efficiency.

[0029] 2) The present invention uses the electronic device model system function to construct a circuit model and applies it to thermal transient simulation, achieving the effect of one-time extraction and multiple simulations, greatly shortening the time used for thermal transient simulation of electronic equipment in thermal design, shortening the R&D cycle, and improving product superiority. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A schematic diagram of a flow chart of a thermal simulation method for an electronic device according to an embodiment of the present invention;

[0031] Figure 2 A schematic diagram of mesh generation of a mobile phone model according to an embodiment of the present invention;

[0032] Figure 3 A power function curve diagram of a mobile phone heat source according to an embodiment of the present invention;

[0033] Figure 4 It is an instantaneous temperature curve diagram of each observation point of a mobile phone according to an embodiment of the present invention;

[0034] Figure 5 A comparison diagram of the results of simulating a mobile phone model using the prior art and the thermal simulation method of the present invention;

[0035] Figure 6 The figure is a schematic diagram of relative errors of simulation results of a mobile phone model using the thermal simulation method of the prior art and the present invention respectively. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the present invention more understandable, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments of the specification. It should be noted that many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, and those skilled in the art can make similar generalizations without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0037] Secondly, "one embodiment" or "an embodiment" in this application refers to a specific feature, structure or characteristic that can be included in at least one implementation of the present invention. The "in one embodiment" and "an embodiment" that appear in different places in this specification do not all refer to the same embodiment, nor are they separate or selective embodiments that are mutually exclusive with other embodiments. The terms "including" and "comprising" indicate the presence of the claimed features, but do not exclude the presence of one or more other features. The term "and / or" used in this application includes any and all combinations of one or more of the relevant listed items.

[0038] The present invention proposes a thermal simulation method for electronic equipment, see Figure 1 , including the following steps:

[0039] Step S1: construct a geometric model of the electronic device.

[0040] Step S2: meshing the geometric model.

[0041] Step S3, setting material parameters and convection boundary conditions of the geometric model, the material parameters include thermal conductivity, density, specific heat capacity, etc., and the convection boundary conditions include the convection heat transfer coefficient of the outer surface of the geometric model, the fluid environment temperature, etc.

[0042] Step S4, set the temperature observation point and heat source, a heat source can act on one or more nodes, each observation point corresponds to a node of the grid. It should be noted that the node refers to the vertex of the grid, and the temperature of each grid vertex is usually calculated in units of nodes during simulation calculation.

[0043] Step S5, constructing a finite element matrix: constructing a stiffness matrix [K] and a mass matrix [M] of the geometric model according to the meshing, material properties and convection boundary conditions of the geometric model, and calculating a load vector {B} according to the heat source.

[0044] Specifically, the calculation of the stiffness matrix [K], mass matrix [M], and load vector {B} is based on the following finite element basic formula for heat conduction simulation:

[0045] [K]{T}+[M]{dT / dt}={B};

[0046] ;

[0047] ;

[0048] ;

[0049] Where t is time, [K] is the stiffness matrix, [M] is the mass matrix, [K] and [M] are both sparse matrices, a matrix storage form for very large matrices in computers, often used in large matrix calculations, that is, the data of the stiffness matrix [K] and the mass matrix [M] are stored in the computer memory in the form of sparse matrices to prevent the memory space from being too large; {B} is the load vector, which indicates the size of the heat source applied to the node; {T} is the node temperature, Ni is the interpolation function of node i in the unit, h is the convective heat transfer coefficient, k is the thermal conductivity, ρ is the density, c is the specific heat capacity, Q is the input volume heat source size, q is the input surface heat source size, T amb is the ambient temperature.

[0050] Step S6: According to the stiffness matrix [K], the mass matrix [M] and the load vector {B}, the system response function H(s) of the geometric model is obtained by finite element analysis calculation using existing thermal simulation software, and converted into a matrix representation to obtain a system response function matrix [H(s)]. The elements [H(s)] in the matrix [H(s)] ij It represents the temperature contribution function of the jth heat source group to the observation point i. The extraction operation of the system response function H(s) is a prior art, so it will not be elaborated in detail here.

[0051] Step S7: Perform an inverse Laplace transform on the system response function matrix [H(s)] to obtain the time domain system response function matrix [H(t)], that is, [H(t)]=L -1 [[H(s)]],L -1 is the symbol of the inverse Laplace transform.

[0052] The basic formula for the inverse Laplace transform is: .

[0053] Step S8: Set the transient power vector of each heat source according to the application scenario required by the transient simulation. , where m is the number of heat source groups, {P(t)} is an m-dimensional vector, and p i (t) is the power function of the i-th group of heat sources.

[0054] Step S9, convolve [H(t)] and {P(t)} to obtain and output the instantaneous temperature {T(t)} of each observation point, and the calculation formula of the instantaneous temperature {T(t)} of each observation point is: {T(t)}=[H(t)]*{P(t)};

[0055] {T(t)} is an n-dimensional vector, n is the number of observation points, and the expression is: .

[0056] The output of {T(t)} is expressed as an instantaneous temperature curve at each observation point.

[0057] The basic formula for the convolution operation is: .

[0058] The following is an example of instantaneous thermal simulation of a mobile phone to explain the above thermal simulation method in detail. The specific operation is as follows:

[0059] 1) Construct a geometric model of the mobile phone;

[0060] 2) Mesh the geometric model of the mobile phone, such as Figure 2 As shown;

[0061] 3) Set the material parameters and convection boundary conditions of the geometric model;

[0062] 4) Set three temperature observation points (probe1, probe2, probe3) and two heat sources (GPU, SOC). Each observation point corresponds to a node of the grid.

[0063] 5) Construct finite element matrix: Construct the stiffness matrix [K] and mass matrix [M] of the geometric model according to the mesh, material properties and convection boundary conditions of the geometric model, and calculate the load vector {B} according to the heat source;

[0064] 6) Import the stiffness matrix [K], mass matrix [M] and load vector {B} with the mobile phone model and boundary condition data into the thermal simulation software, and calculate the system response function matrix [H(s)] of the geometric model;

[0065] 7) Perform an inverse Laplace transform on the system response function matrix [H(s)] to obtain the time domain system response function matrix [H(t)];

[0066] 8) Set the transient power vector {P(t)} of each heat source according to the application scenario. The power function is as follows: Figure 3 As shown;

[0067] 9) Convolve [H(t)] and {P(t)} to obtain and output the instantaneous temperature {T(t)} of each observation point. The output of {T(t)} is expressed as the instantaneous temperature curve of each observation point, such as Figure 4 shown.

[0068] Through the extracted system response function matrix [H(s)] and the power {P(t)} set in different mobile phone application scenarios, the observation point temperature {T(t)} in different mobile phone application scenarios can be calculated, achieving the effect of one extraction (i.e. extracting H(s) through thermal simulation software) and multiple simulations.

[0069] The following is an example of thermal simulation analysis of a mobile phone model under natural convection heat dissipation. The heat sources are set to 14 0.4W surface heat sources on the chip and 1W body heat source on the DDR. The observation point is set to the center point of the mobile phone screen. After meshing, the finite element thermal transient simulation method of the prior art and the thermal transient simulation method based on the system response function of the present invention are used to solve the above case. The comparison results of the simulation time are shown in Table 1. The temperature curves obtained by the two methods are shown in Table 1. Figure 5 As shown, the relative temperature error is Figure 6 As shown. Figure 5 and Figure 6 It can be seen that the simulation results of the two methods are basically consistent, and the error can be ignored. However, the simulation time of the present invention is greatly improved compared with the prior art, which greatly improves the simulation efficiency and saves simulation time.

[0070] Table 1 Comparison of simulation time of mobile phone model using the thermal simulation method of the prior art and the present invention

[0071]

[0072] The present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory, wherein the processor executes the computer program to implement the thermal simulation method of the electronic device as described above.

[0073] The present invention also provides a computer storage medium, on which a computer program is stored. When the computer program is executed by a processor, the thermal simulation method of the electronic device as described above is implemented.

[0074] The present invention also provides a computer program product, including a computer program, which implements the thermal simulation method of the electronic device as described above when executed by a processor.

[0075] It should be noted that Figure 2 , Figure 3 , Figure 4Screenshots of the actual software operation interface for thermal transient simulation of mobile phones are shown. These figures are intended to show the operation process of the present invention in actual software and the model building effect, rather than directly involving the technical solution of the present invention. These screenshots include color graphics, which are the original presentation states of the software interface. These contents are not processed here to present the real state of the actual software. The contents presented are helpful for technicians in this field to more intuitively understand the implementation method of the software using the technical solution of the present invention. The color graphics in the figure will not affect the understanding of the technical solution of the present invention itself.

[0076] The present invention has the following beneficial effects:

[0077] 1) The present invention is based on a thermal circuit simulation method. By extracting the system response function matrix [H(s)] of the electronic device through the simulation software and setting the heat source power {P(t)} of the electronic device in different application scenarios, the transient temperature {T(t)} of each observation point of the electronic device in a certain application scenario can be simulated and calculated at one time, thereby improving the simulation efficiency.

[0078] 2) The present invention uses the electronic device model system function to construct a circuit model and applies it to thermal transient simulation, achieving the effect of one-time extraction and multiple simulations, greatly shortening the time used for thermal transient simulation of electronic equipment in thermal design, shortening the R&D cycle, and improving product superiority.

[0079] The construction and arrangement of the present application shown in a number of different exemplary embodiments are only exemplary. Although only a few embodiments are described in detail in this disclosure, it should be readily understood by those who refer to this disclosure that many modifications are possible (e.g., parameter values, mounting arrangements, changes in color, orientation, etc.) without substantially departing from the novel teachings and advantages of the subject matter described in the application. For example, an element shown as integrally formed may be composed of multiple parts or elements, the position of the element may be inverted or otherwise changed, and the nature or number or position of the discrete element may be changed or changed. Therefore, all such modifications are intended to be included within the scope of the present invention. The order or sequence of any process or method steps may be changed or reordered according to an alternative embodiment. In the claims, any "device plus function" clause is intended to cover the structure described herein that performs the function, and is not only structurally equivalent but also equivalent structure. Without departing from the spirit and essence of the present invention, a person skilled in the art may make various corresponding modifications and changes according to the present invention, but these corresponding modifications and changes should fall within the scope of protection of the present invention.

Claims

1. A thermal simulation method for electronic equipment, It is characterized in that The steps include: Construct geometric models of electronic devices; Meshing the geometric model; Set the material parameters and convection boundary conditions of the geometric model; Set the temperature observation point and heat source, each observation point corresponds to a node of the grid; Construct finite element matrix: Construct the stiffness matrix [K] and mass matrix [M] of the geometric model according to the mesh, material properties and convection boundary conditions of the geometric model, and calculate the load vector {B} according to the heat source; According to the stiffness matrix [K], mass matrix [M] and load vector {B}, the system response function matrix [H(s)] of the geometric model is obtained through finite element analysis calculation; Perform an inverse Laplace transform on the system response function matrix [H(s)] to obtain the time domain system response function matrix [H(t)]; Set the transient power vector {P(t)} of each heat source according to the application scenario; Convolve [H(t)] and {P(t)} to obtain and output the instantaneous temperature {T(t)} of each observation point.

2. The thermal simulation method of an electronic device according to claim 1, It is characterized in that The material parameters include thermal conductivity, density, and specific heat capacity, and the convection boundary conditions include the convection heat transfer coefficient of the outer surface of the geometric model and the fluid environment temperature.

3. The thermal simulation method of an electronic device according to claim 1, It is characterized in that The data of the stiffness matrix [K] and the mass matrix [M] are stored in the form of sparse matrices.

4. The thermal simulation method of an electronic device according to claim 1, It is characterized in that The transient power vector {P(t)} of each heat source is: ； Where m is the number of heat source groups, {P(t)} is an m-dimensional vector, and p i (t) is the power function of the i-th group of heat sources.

5. The thermal simulation method of an electronic device according to claim 1, It is characterized in that The calculation formula for the instantaneous temperature {T(t)} of each observation point is: {T(t)}=[H(t)]*{P(t)}.

6. The thermal simulation method of an electronic device according to claim 1, It is characterized in that The instantaneous temperature {T(t)} of each observation point is an n-dimensional vector, where n is the number of observation points, and the expression is: 。 7. The thermal simulation method of an electronic device according to claim 1, It is characterized in that The instantaneous temperature {T(t)} of each observation point is expressed as an instantaneous temperature curve graph of each observation point.

8. A computer device comprising a memory, a processor and a computer program stored in the memory, It is characterized in that The processor executes the computer program to implement the thermal simulation method for an electronic device according to any one of claims 1 to 7.

9. A computer storage medium having a computer program stored thereon, It is characterized in that When the computer program is executed by a processor, the thermal simulation method for an electronic device according to any one of claims 1 to 7 is implemented.

10. A computer program product comprising a computer program, It is characterized in that When the computer program is executed by a processor, the thermal simulation method for an electronic device according to any one of claims 1 to 7 is implemented.

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