Integrated blocking impurity band detector and manufacturing method thereof

Abstract

The present application relates to an integrated blocking impurity band detector and a manufacturing method thereof. The integrated blocking impurity band detector comprises: a superlens array for focusing light; a blocking impurity band detection structure, which is arranged on the light-emitting side of the superlens array, and the blocking impurity band detection structure comprises a light-transmitting substrate, a first electrode layer, an absorption layer, a blocking layer, a second electrode layer, a passivation layer and a first contact electrode, wherein the light-transmitting substrate, the first electrode layer, the absorption layer, the blocking layer, the second electrode layer and the passivation layer are stacked in sequence in the direction opposite to the superlens array, and the first contact electrode passes through the passivation layer and is electrically connected to the second electrode layer; and a supersurface array, which is arranged in the absorption layer and located at the focus of the superlens array, and is used to realize surface plasma resonance. The detector can effectively reduce optical crosstalk and improve the quantum efficiency and overall optoelectronic performance of the device.

Description

Technical Field

[0001] The present disclosure relates to the technical field of terahertz detection devices, and in particular to an integrated blocking impurity band detector and a manufacturing method thereof. Background Art

[0002] The cosmic background radiation is concentrated in the terahertz band, and its radiation energy can effectively penetrate celestial clouds composed of gas and dust. Terahertz space detection is an effective way to trace the formation and evolution of the universe, calculate the mass loss of stars, and search for unknown planets and extraterrestrial life. Terahertz detection technology can reflect space material information from different angles and has been applied in engineering in space-based and ground-based detection systems.

[0003] As a typical representative of focal plane detection elements in space-based systems, the blocking impurity band array detector cleverly uses the intrinsic blocking layer to effectively suppress dark current, solving the need for low-noise and radiation-resistant mid- and far-infrared detection, and can adapt to the astronomical deep space detection environment with low optical flux and low signal level. The blocking impurity band detector developed with germanium semiconductor as the substrate can perfectly cover the very long-wave infrared frequency band between 40μm and 200μm.

[0004] However, the pixel center distance of existing germanium-based blocking impurity band detectors has gradually approached the minimum pixel size limited by the diffraction limit. As the wavelength increases, there is a strong diffraction limit that causes the unit pixel size to be too large, which seriously affects the resolution of the electron optical system for detecting small objects with low signal-to-noise ratio and generates excessive device power consumption. At the same time, the integrated large-area array requires the size of the photosensitive pixel to be miniaturized, and the electrical and optical crosstalk problems between the pixels have become a prominent bottleneck for the high-resolution performance of the blocking impurity band detector. Summary of the invention

[0005] Based on this, it is necessary to provide an integrated blocking impurity band detector and a manufacturing method thereof to address at least one of the above problems.

[0006] The disclosed embodiment provides an integrated blocking impurity band detector, which includes: a superlens array for focusing light; a blocking impurity band detection structure, which is arranged on the light-emitting side of the superlens array, and the blocking impurity band detection structure includes a transparent substrate, a first electrode layer, an absorption layer, a blocking layer, a second electrode layer, a passivation layer and a first contact electrode, wherein the transparent substrate, the first electrode layer, the absorption layer, the blocking layer, the second electrode layer and the passivation layer are stacked in sequence along a direction away from the superlens array, and the first contact electrode passes through the passivation layer and is electrically connected to the second electrode layer; and a supersurface array, which is arranged in the absorption layer and located at the focus of the superlens array, and is used to realize surface plasma resonance.

[0007] By setting up a superlens array, the probability of photogenerated carriers diffusing to adjacent pixels when the impurity blocking band detection structure is working can be reduced, which can effectively reduce optical crosstalk and improve quantum efficiency; combined with the integrated supersurface array, the quantum efficiency and overall optoelectronic performance of the device can be improved.

[0008] The integrated blocking impurity band detector of the embodiment of the present disclosure has at least one of the following beneficial effects:

[0009] The superlens array is composed of a planar unit structure, which can achieve super-diffraction resolution focusing, improve optical focusing efficiency, and effectively reduce the pixel spacing; the integrated impurity blocking band detector has a small integrated volume;

[0010] Superlenses are conducive to on-chip integration. The terahertz superlens array is integrated with the pixel array of the germanium-based impurity blocking band detection structure by immersion back-to-back integration, which has the advantages of light weight and thin thickness, and can also effectively improve the terahertz band detection performance;

[0011] The absorption layer of the germanium-based blocking impurity band detector has a high doping concentration. By etching an artificial composite metasurface array on the surface of the absorption layer, the free charge concentration can be diluted to regenerate the plasma effect, effectively enhancing the photoelectric response of the blocking impurity band detector; the strong local electromagnetic oscillation caused by the plasma coupling structure can make the energy band of the blocking impurity band device continuously tilt and bend, the overlap of the valence band wave function and the conduction band wave function in the band gap increases, and the probability of electrons crossing the band gap to reach the conduction band also increases, which helps the electrons blocked by the conduction band step at the interface between the blocking layer and the absorption layer to cross the potential barrier; further, efficient photon absorption and carrier excitation can be achieved by adjusting the size of the resonator;

[0012] The blocking impurity band detector based on the back-integrated immersion superlens array has good performance.

[0013] In some embodiments, the superlens in the superlens array includes a light incident microstructure, a lens substrate, and a light emitting microstructure stacked in sequence, the light incident microstructure and the light emitting microstructure respectively include nanocolumns, the lattice constant of the nanocolumns is smaller than the working wavelength, the reflection optical path difference between the light incident surface and the light emitting surface of the nanocolumns is configured to be π, and the transmission phases of the light incident microstructure and the light emitting microstructure respectively cover 0 to 2π.

[0014] Such an arrangement is helpful to achieve super-diffraction resolved focusing, which is beneficial to improving the transmission focusing capability and ensuring the effective reduction of optical crosstalk in the blocking impurity band detection structure.

[0015] In some embodiments, the operating wavelength is 40 μm to 200 μm, the nanorods are high-resistance silicon nanorods with a transmittance greater than 77%; the focal length range of the superlens is 1.25 mm to 2.75 mm, and the diameter range of the superlens is 1000 μm to 1500 μm.

[0016] Such a setting is conducive to ensuring the detection of the terahertz band and achieving a smaller size while ensuring the focusing effect.

[0017] In some embodiments, the metasurface array includes a plurality of metasurface structures, each of which includes a plurality of periodically arranged concave resonators; and the material of the metasurface array is metal.

[0018] Such an arrangement helps to ensure the absorption of terahertz waves; at the same time, it ensures the coordination with the first contact electrode and enhances the absorption capacity of the absorption layer.

[0019] In some embodiments, the arrangement period of multiple concave resonators in the metasurface structure is 30 μm to 70 μm; the concave resonator has a slot opened along the first arrangement direction of the metasurface structure, the width of the slot ranges from 1.75 μm to 5 μm, and the length of the concave resonator along the first arrangement direction ranges from 25 μm to 45 μm.

[0020] This arrangement, by configuring the size range and arrangement period of the concave resonators, can make the metasurface structure have a better absorption effect; in addition, it also helps to achieve perfect absorption for specific wavelengths.

[0021] In some embodiments, the material of the light-transmitting substrate includes germanium; the doping element of the absorption layer includes phosphorus or boron, and the doping concentration of the absorption layer is in the range of 1×10 16 cm -3 Up to 10×10 16 cm -3 , with a thickness of 100 μm to 200 μm; the doping elements of the first electrode layer and the second electrode layer include phosphorus, and the doping concentration of the first electrode layer and the second electrode layer is in the range of 1×10 18 cm -3 Up to 5×10 18 cm -3 , with a thickness of 2μm to 10μm; and a thickness of the barrier layer of 20μm to 50μm.

[0022] With such arrangement, the integrated blocking impurity band detector has good photoelectric performance; a blocking impurity band detection structure with reliable performance can be manufactured through micro-nano technology.

[0023] In some embodiments, the blocking impurity band detection structure further includes a groove electrode and a second contact electrode, the groove electrode penetrates the blocking layer and the absorption layer and is electrically connected to the first electrode layer, the groove electrode extends along the first arrangement direction of the metasurface structure, and the second contact electrode penetrates the passivation layer and is electrically connected to the groove electrode. Exemplarily, the integrated blocking impurity band detector further includes a circuit structure and a plurality of indium bumps, the circuit structure includes an amplifier and a third contact electrode electrically connected to the amplifier, and the third contact electrode is bonded to the corresponding first contact electrode or the corresponding second contact electrode through the corresponding indium bump.

[0024] Such a configuration is beneficial to arranging the layout structure of the groove electrode and the first electrode layer, is beneficial to the coordination of the first electrode layer and the super-surface structure, enhances the absorption of light, and is beneficial to the readout of current.

[0025] An embodiment of the present disclosure provides a method for manufacturing an integrated blocking impurity band detector, the method comprising: forming a blocking impurity band detection structure based on a light-transmitting substrate, comprising: forming a first electrode layer, an absorption layer, a blocking layer, a second electrode layer and a passivation layer stacked in sequence and located on a first side of the light-transmitting substrate; and, forming a first contact electrode that penetrates the passivation layer and is electrically connected to the first electrode layer; forming a super lens array located on the second side of the light-transmitting substrate for focusing light onto the light-transmitting substrate; and before forming the absorption layer, forming a super surface array located at the focus of the super lens array and used to generate surface plasmon resonance.

[0026] The method provided by the embodiment of the present disclosure is easy to implement and can manufacture an integrated blocking impurity band detector with a small size and good light absorption effect.

[0027] In some embodiments, the microstructure of the superlens array includes a nanocolumn designed by simulation, and the simulation design step includes: performing a parameter scan of the diameter of the nanocolumn from 2 μm to 16 μm with a step size of 0.1 μm, and selecting a high-resistance silicon nanocolumn that meets the transmittance and transmission phase conditions. Exemplarily, the metasurface array includes a concave resonator that has been numerically simulated, and the numerical simulation step includes: setting a periodic boundary condition along a first arrangement direction and a second arrangement direction perpendicular to each other in the extension surface of the first electrode layer, wherein the notch of the concave resonator is opened along the first arrangement direction; setting a perfect matching layer boundary condition along a third direction perpendicular to the extension surface; determining the initial range of the length of the concave resonator along the first arrangement direction and the width of the notch according to the working wavelength; forming a combination set in which each combination is distributed in a mode with equal amplitude and opposite phase according to the correlation between the length of the concave resonator along the first arrangement direction and the width of the notch; and performing numerical simulation based on the combination set to obtain the length range of the concave resonator and the width range of the notch.

[0028] With this arrangement, each superlens has a good focusing effect within its range, and the interference between the superlenses is less, which effectively reduces the optical crosstalk of each absorption unit of the integrated blocking impurity band detector. In addition, by configuring a concave resonator, the integrated blocking impurity band detector has a high absorption efficiency.

[0029] In some embodiments, a first electrode layer is formed by ion implantation into a light-transmitting substrate; an absorption layer is formed by a chemical vapor deposition process; and a barrier layer is formed by a liquid phase epitaxial growth process. Exemplarily, the method further includes: forming a groove penetrating the barrier layer and the absorption layer. Exemplarily, a second electrode layer is formed by ion implantation into the barrier layer, and a groove electrode electrically connected to the first electrode layer is formed; a passivation layer is formed by a plasma enhanced chemical vapor deposition process; a first contact electrode penetrating the passivation layer and electrically connected to the second electrode layer is formed by an etching process and an electron beam evaporation process, and a second contact electrode penetrating the passivation layer and electrically connected to the groove electrode is formed. Exemplarily, the first contact electrode and the second contact electrode are respectively bonded to the corresponding third contact electrode in the circuit structure.

[0030] With such an arrangement, each manufacturing step can be implemented reliably, effectively or conveniently using relatively mature micro-nano processing technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic structural diagram of an integrated blocking impurity band detector according to an embodiment of the present disclosure;

[0032] Figure 2 It is a schematic diagram of the light receiving state of the integrated blocking impurity band detector according to the embodiment of the present disclosure;

[0033] Figure 3 Schematic diagram of the focusing state of the super lens array in the embodiment of the present disclosure;

[0034] Figure 4 It is a schematic diagram of the structure of the metalens in the embodiment of the present disclosure;

[0035] Figure 5 1 is a structural schematic diagram of another viewing angle of a metalens in an embodiment of the present disclosure;

[0036] Figure 6 A schematic diagram of the structure of a metalens from another perspective in an embodiment of the present disclosure;

[0037] Figure 7 is a beam focusing diagram of the superlens array in the XY plane in the embodiment of the present disclosure;

[0038] Figure 8 is a beam focusing diagram of the superlens array in the XZ plane in the embodiment of the present disclosure;

[0039] Fig. 9 It is a schematic structural diagram of a blocking impurity band detection structure in an embodiment of the present disclosure;

[0040] Fig.10 is a schematic top view of a blocking impurity band detection structure in an embodiment of the present disclosure;

[0041] Fig.11 is an absorption rate curve diagram of the integrated blocking impurity band detector according to the embodiment of the present disclosure and a comparative example;

[0042] Fig.12 A schematic flowchart of a method for manufacturing an integrated blocking impurity band detector according to an embodiment of the present disclosure;

[0043] Fig.13 A schematic diagram of the process of manufacturing a superlens array in an embodiment of the present disclosure;

[0044] Fig.14 It is a schematic diagram of the process of manufacturing a blocking impurity band detection structure in an embodiment of the present disclosure.

[0045] Explanation of the accompanying drawings: 1. superlens array; 101. nanopillar; 110. superlens; 111. light input microstructure; 112. lens substrate; 113. light output microstructure; 1130. wafer; 2. metasurface array; 201. resonator; 202. notch; 210. metasurface structure; 20. metasurface precursor; 3. blocking impurity band detection structure; 301. transparent substrate; 302. first electrode layer; 303. groove electrode; 304. absorption layer; 305. blocking layer; 306. second electrode layer; 307. passivation layer; 308. first contact electrode; 309. second contact electrode; 310. electrode pattern; 4. indium bump; 5. circuit structure; 501. amplifier; 502. third contact electrode; 6. hard mask; 7. photoresist layer; 100. integrated blocking impurity band detector. DETAILED DESCRIPTION

[0046] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present disclosure more obvious and understandable, the specific implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the embodiments of the present disclosure. However, the embodiments of the present disclosure can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the embodiments of the present disclosure, so the embodiments of the present disclosure are not limited by the specific examples of the embodiments disclosed below.

[0047] In the description of the embodiments of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "perpendicular", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present disclosure.

[0048] In the embodiments of the present disclosure, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0049] In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. Exemplarily, the first contact electrode may also be referred to as the second contact electrode, and the second contact electrode may also be referred to as the first contact electrode. In the description of the embodiments of the present disclosure, "multiple" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0050] In the embodiments of the present disclosure, unless otherwise clearly specified and limited, the terms "connected", "connected", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a flexible connection, or a rigid connection along at least one direction; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or directly connected with the presence of an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly limited. The terms "installed", "set", "fixed", etc. can be broadly understood as connection. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to the specific circumstances.

[0051] As used in the present disclosure, the terms "layer" and "region" refer to a portion of a material that includes an area with a certain thickness. The layer can extend horizontally, vertically and / or along a tapered surface. A layer can be an area of ​​a uniform or non-uniform continuous structure, and its thickness perpendicular to the extension direction may not be greater than the thickness of the continuous structure. A layer can include multiple layers, which can be multiple stacked layers or multiple layers extending discretely. The shapes of various areas and layers in the drawings and their relative sizes and positional relationships are only exemplary, and may actually deviate due to manufacturing tolerances or technical limitations, and the design can be adjusted according to actual needs.

[0052] refer to Figure 1 , Figure 1 The integrated blocking impurity band detector in the embodiment of the present disclosure is shown. The integrated blocking impurity band detector 100 provided in the embodiment of the present disclosure includes a blocking impurity band detection structure 3, which can realize the photoelectric effect for detection.

[0053] The integrated impurity blocking band detector 100 can be divided into different regions in the XY plane, such as Figure 1 As shown, along the Y-axis direction from left to right, there are three photosensitive areas and one peripheral area. For example, the β area is the photosensitive area, and the γ area can be called the peripheral area. The cell structure of the integrated blocking impurity band detector 100 in, for example, the photosensitive area can be called an absorption unit or a pixel. The integrated blocking impurity band detector 100 may include at least one absorption unit. The structure of the blocking impurity band detection structure 3 in multiple photosensitive areas can be repeated periodically, or it can be different in different photosensitive areas.

[0054] Exemplarily, the impurity blocking band detection structure 3 or the absorption unit includes a light-transmitting substrate 301, a first electrode layer 302, an absorption layer 304, a blocking layer 305, a second electrode layer 306 and a passivation layer 307 stacked in sequence along the Z-axis direction. Corresponding to the multiple photosensitive regions, the second electrode layer 306 may include multiple electrode patterns 310, and the electrode patterns 310 may be arranged at intervals from each other. The light-transmitting substrate 301 is light-transmitting; Exemplarily, the doping concentrations of both the first electrode layer 302 and the second electrode layer 306 are greater than the doping concentration of the absorption layer 304, and the first electrode layer 302 and the second electrode layer 306 may have heavily doped semiconductor materials; the absorption layer 304 can be used to absorb, for example, terahertz waves and convert light into carriers through the photoelectric effect; the blocking layer 305 can effectively solve the dark current and prevent excessive noise; the passivation layer 307 is arranged on the surface of the second electrode layer 306 to oxidize.

[0055] In some embodiments, the material of the light-transmitting substrate 301 includes germanium. The material of the light-transmitting substrate 301 may be high-purity germanium, which may contain unintentionally doped impurities or have intrinsic doping defects. For example, the doping concentration of the high-purity germanium may be no greater than 1×1013 cm -3 , for example, 1×10 9 cm -3 In other embodiments, the material of the light-transmitting substrate 301 may be silicon, silicon germanium, sapphire or other materials, which can achieve light transmission in other working bands.

[0056] The impurity blocking band detection structure 3 may be a germanium-based semiconductor structure. For example, the doping element of the absorption layer 304 includes phosphorus or boron, and the doping concentration of the absorption layer is in the range of 1×10 16 cm -3 Up to 10×10 16 cm -3 , for example 5×10 16 cm -3 ; The thickness is 100 μm to 200 μm, for example, 150 μm. Exemplarily, the doping elements of the first electrode layer 302 and the second electrode layer 306 each include phosphorus, and the doping concentration of the first electrode layer 302 and the second electrode layer 306 each ranges from 1×10 18 cm -3 Up to 5×10 18 cm -3 , for example 3×10 18 cm -3 ; The thickness is 2 μm to 10 μm, for example, 5 μm. The thickness of the blocking layer 305 is 20 μm to 50 μm, for example, 30 μm; the blocking layer 305 can be an intrinsic layer. The integrated blocking impurity band detector 100 has good photoelectric performance. The blocking impurity band detection structure 3 with reliable performance can be manufactured by micro-nano process. For example, the material of the passivation layer 307 can be silicon nitride.

[0057] In some embodiments, the blocking impurity band detection structure 3 also includes a groove electrode 303, which penetrates the blocking layer 305 and the absorption layer 304 and is electrically connected to the first electrode layer 302. The groove electrode 303 can lead out the first electrode layer 302 to ensure that the first electrode layer 302 can be electrically connected. The first electrode layer 302 can also be connected to electricity in other ways. The first electrode layer 302 and the second electrode layer 306 can be connected to the positive and negative electrodes of the power supply, and the normal working mode or the abnormal working mode can be selected according to the semiconductor doping type. Exemplarily, the groove electrode 303 can have a V-shape in the YZ plane.

[0058] The blocking impurity band detection structure 3 may include a plurality of first contact electrodes 308, and the first contact electrodes 308 may also be arranged at intervals from each other. The first contact electrode 308 penetrates the passivation layer 307 and is electrically connected to the second electrode layer 306. The first contact electrode 308 may be partially stacked on the passivation layer 307. Exemplarily, the blocking impurity band detection structure 3 also includes a second contact electrode 309, which penetrates the passivation layer 307 and is electrically connected to the groove electrode 303.

[0059] The integrated blocking impurity band detector 100 further includes a circuit structure 5 and an indium bump 4. The circuit structure 5 can be electrically connected to the blocking impurity band detection structure 3 through the indium bump 4. Exemplarily, the circuit structure 5 includes a third contact electrode 502, and the third contact electrode 502 is bonded to the corresponding first contact electrode 308 or the corresponding second contact electrode 309 through the corresponding indium bump 4. The circuit structure 5 may include a plurality of third contact electrodes 502, and the integrated blocking impurity band detector 100 may include a plurality of indium bumps 4. Exemplarily, the electrode bonded to the second contact electrode 309 in the circuit structure 5 may be referred to as a fourth contact electrode.

[0060] The circuit structure 5 includes an amplifier 501, which is electrically connected to the third contact electrode 502. The carriers converted by the absorption layer 304 can move through the restriction of the first electrode layer 302 and the second electrode layer 306, and are read out by the circuit structure 5, wherein the amplifier 501 can amplify the signal to facilitate reading and transmission. The amplifier 501 can be an integrated amplifier integrated in the circuit structure 5. Exemplarily, the circuit structure 5 includes a readout circuit and a bias voltage circuit, the bias voltage circuit can control the blocking impurity band detection structure 3, and the readout circuit is used to read the current signal of the blocking impurity band detection structure 3.

[0061] In other embodiments, the circuit structure 5 and the plurality of indium bumps 4 may be considered to belong to the blocking impurity band detection structure 3 .

[0062] Combination Figure 2 As shown, in some embodiments, the integrated blocking impurity band detector 100 also includes a superlens array 1. The superlens array 1 is used for focusing light, and the blocking impurity band detection structure 3 is arranged on the light-emitting side of the superlens array 1, wherein the light-transmitting substrate 301 is stacked on the superlens array 1 and the absorption layer 304 is located on the side of the light-transmitting substrate 301 facing away from the superlens array 1. The superlens array 1 may include a plurality of superlenses 110 arranged in an array, and the superlenses 110 are located in the corresponding photosensitive area. The superlens array 1 can achieve super-diffraction resolution focusing, improve optical focusing efficiency, and effectively reduce the pixel spacing; by setting the superlens array 1, the probability of photogenerated carriers diffusing to adjacent pixels when the blocking impurity band detection structure 3 is working can be reduced, which can effectively reduce optical crosstalk and improve quantum efficiency.

[0063] Combination Figure 2 As shown, in some embodiments, the integrated blocking impurity band detector 100 further includes a metasurface array 2, which is disposed in the absorption layer and located at the focus of the superlens array 1, and is used to realize surface plasmon resonance, which can improve the quantum efficiency and overall optoelectronic performance of the integrated blocking impurity band detector 100. The metasurface array 2 is integrated in the blocking impurity band detection structure 3, and the integrated volume of the integrated blocking impurity band detector 100 is small.

[0064] Exemplarily, the material of the metasurface array 2 is metal. Taking a photosensitive area as an example, the superlens 110 is used to incident terahertz light waves and achieve focusing. The focused light passes through the light-transmitting substrate 301 and is then absorbed in the absorption layer 304. The metasurface structure 210, the first contact electrode 308, and the medium therebetween together constitute a "metal-medium-metal (MIM)" structure to enhance the effective absorption of the absorption layer 304. The first contact electrode 308 can reflect the surface plasma excited at the interface between it and the barrier layer 305. The destructive interference of the surface plasma between the first contact electrode 308 and the metasurface array 2 generates a resonant mode in the dielectric cavity, which causes the light to be captured and absorbed.

[0065] For the "metal-dielectric-metal" structure, the two resonance modes of propagating surface plasmon resonance (PSPR) and localized surface plasmon resonance (LSPR) can affect the absorption characteristics and achieve absorption enhancement. PSPR is a special non-local mode generated by metal surface electrons under the excitation of incident light. In the "metal-dielectric-metal" structure, the metasurface structure 210 can be regarded as a grating structure for matching the diffraction wave vector and the evanescent wave vector excited by the interface of the first contact electrode 308. The LSPR is a localized mode that exists near the metasurface structure 210 and gradually diffuses into the entire dielectric cavity.

[0066] Exemplarily, along the Z-axis direction, the metasurface array 2 is located at the edge of the absorption layer 304 close to the first electrode layer 302, ensuring that the portion of the absorption layer 304 located on the light-emitting side of the metasurface array 2 has a larger size, which is conducive to absorbing light and generating carriers.

[0067] In some embodiments, the metalens 110 in the metalens array 1 includes a light incident microstructure 111, a lens substrate 112, and a light emitting microstructure 113 stacked in sequence. The focus of the metalens 110 is located at the metasurface array 2, Figure 2 , the focal length f of the super lens 110 can be from the lens substrate 112. Along the Z-axis direction, the total thickness of the light-emitting microstructure 113, the light-transmitting substrate 301 and the first electrode layer 302 is equal to the focal length of the super lens 110. Figure 3Each super lens 110 can be used to focus the incident light, and the focal lengths of the multiple super lenses 110 can be the same. The super lenses 110 can be densely arranged, which helps the super lens array 1 to achieve a smaller size.

[0068] refer to Figure 4 , Figure 5 and Figure 6 , the light incident microstructure 111 and the light emitting microstructure 113 respectively include nanorods 101. The lattice constant of the nanorods 101 is smaller than the working wavelength, the reflection optical path difference between the light incident surface and the light emitting surface of the nanorods 101 is configured to be π, and the transmission phases of the light incident microstructure 111 and the light emitting microstructure 113 respectively cover 0 to 2π, which is helpful to achieve super-diffraction resolution focusing and is beneficial to improving the transmission focusing capability. In some embodiments, the working wavelength is 40μm to 200μm.

[0069] The transmittance of the nanorod 101 is greater than 77%, and high transmittance can better transmit light. The transmittance of the nanorod 101 can be close to 100%, which is conducive to ensuring the detection of the terahertz band. Exemplarily, the nanorod 101 is a high-resistance silicon nanorod, and the transmittance of the high-resistance silicon nanorod can range from 77.478% to 99.968%. Exemplarily, the transmittance of the nanorod 101 is above 99.9%.

[0070] Optionally, the focal length of the metalens 110 ranges from 1.25 mm to 2.75 mm. Exemplarily, the focal length of the metalens 110 is 1.5 mm, 2 mm, or 2.5 mm. The diameter of the metalens 110 ranges from 1000 μm to 1500 μm, for example, 1200 μm, achieving a smaller size while ensuring a focusing effect. When the metalens 110 is rectangular, its side length may be 1000 μm to 1500 μm.

[0071] In some embodiments, the microstructure of the metalens array 1 includes a simulated and designed nanorod 101. The disclosed embodiments also provide a simulation and design method for obtaining a metalens 110 in an integrated blocking impurity band detector 100.

[0072] Exemplarily, the material of the lens substrate 112 is sapphire, which can transmit terahertz light. The working wavelength is 40 μm to 200 μm in the terahertz band. The simulation design step S101 may include: designing the focus of the super lens 110 to be located between the first electrode layer 302 and the absorption layer 304 of the blocking impurity band detection structure 3, for example, the focal length f is 1.7 mm; in addition, the diameter of the super lens 110 is 630 μm.

[0073] Step S102, based on the structural parameters calculated in step S101, the minimum root mean square spot radius is achieved by optimizing the phase mask of the metasurface to obtain an ideal phase distribution. Optionally, a binary optical element (Binary2) is used to simulate and design the metalens 110 in an optical design software.

[0074] In step S103, the transmittance and transmission phase of the nanorod 101 can be calculated using electromagnetic simulation software. The transmittance and transmission phase of the nanorod 101 of high-resistance silicon material with square cross-sections of different side lengths need to be calculated. Figure 5 , nanorods 101 with different side lengths are selected to ensure that the transmission phases of the light-entering microstructure 111 and the light-emitting microstructure 113 cover 0 to 2π. When selecting, it is necessary to satisfy: the lattice constant of the nanorods 101 with square cross-sections is less than the working wavelength and the transmittance is close to 1.

[0075] Specifically, the size of the nanocolumn 101 along the Z-axis direction is 86 μm; the lens substrate 112 is rectangular in the XY plane, and the lattice period of the rectangular array is 20 μm. When simulating the superlens 110, the boundary conditions are set to periodicity, and the excitation direction is from the light-incoming microstructure 111 to the light-outgoing microstructure 113 along the Z-axis direction. The transmission phase change is achieved by changing the diameter of the nanocolumn 101. The simulation design steps include: parameter scanning of the diameter of the nanocolumn 101 from 2 μm to 16 μm in steps of 0.1 μm, and selecting high-resistance silicon nanocolumns that meet the transmittance and transmission phase conditions. This scanning method can effectively take into account both processing accuracy and coupling efficiency; in addition, it is also conducive to ensuring calculation speed.

[0076] Step S104, according to the target phase requirements of the light incident microstructure 111 and the light emitting microstructure 113, determine the appropriate size of the nanorods 101 according to the target phase point, and design a reasonable arrangement of the nanorods 101 of high-resistance silicon material. Figure 6 The light incident microstructure 111 and the light emitting microstructure 113 may have substantially the same arrangement of the nanorods 101 , which is advantageous for manufacturing using the same set of masks.

[0077] Step S105, the designed super lens array 1 can be tested. Figure 7 As shown, the nine super lenses 110 in the 3×3 array have good focusing effects in their respective photosensitive regions, and the interference between the various super lenses 110 is small, which can effectively reduce the optical crosstalk between the absorption units in the integrated blocking impurity band detector 100. For example, the diameter of each super lens 110 is 1260 μm, and the incident wavelength is 100 μm. Figure 8 As shown, the focal points of the three columns of metalenses 110 meet the requirements.

[0078] refer to Figure 1 , Fig. 9 and Fig.10 In some embodiments, the metasurface array 2 includes a resonator 201 that has been numerically simulated, and the resonator 201 is a concave resonator. The metasurface array 2 includes periodically arranged resonators 201, such as a rectangular arrangement; different metasurface structures 210 can be divided in different photosensitive areas. The disclosed embodiment also provides a simulation design method for obtaining the resonator 201 in the integrated blocking impurity band detector 100.

[0079] For example, in combination Figure 1 As shown, according to the construction of the blocking impurity band detection structure 3, the resonator 201 of the super surface structure 210, the absorption layer 304 and the first contact electrode 308 together form a "metal-dielectric-metal (MIM)" structure. The material of the resonator 201 can be titanium. Optionally, the material of the first contact electrode 308 can be aluminum, with a thickness ranging from 0.5μm to 1μm. The thickness of the first contact electrode 308 is greater than the skin depth of the terahertz band, which is conducive to ensuring complete suppression of terahertz wave transmission. Optionally, the thickness of the resonator 201 ranges from 0.5μm to 1μm.

[0080] refer to Fig.10 , the step S201 of numerical simulation includes: presetting a metasurface structure 210. The resonators 201 are periodically arranged along a first arrangement direction and a second arrangement direction that are perpendicular to each other in the XY plane, the first arrangement direction may be parallel to the X-axis direction, and the second arrangement direction may be parallel to the Y-axis direction. The period P of the resonator 201 may be between 30 μm and 70 μm, for example, 65 μm. Exemplarily, the slot electrode 303 is extended along the first arrangement direction; the slot 202 of the resonator 201 is opened along the first arrangement direction. The resonator 201 has a length L along the first arrangement direction, and the outer contour of the resonator 201 may be a square; the slot 202 has a width B.

[0081] Exemplarily, the first contact electrode 308 extends along the first arrangement direction.

[0082] Step S202, periodic boundary conditions are set along the first arrangement direction and the second arrangement direction. Perfect matching layer boundary conditions are set along the third direction perpendicular to the XY plane. The maximum size of the grid in each axis direction in the xyz space is 0.01 μm.

[0083] Step S203, determining the initial range of L and B according to the working wavelength. Specifically, the size of the resonator 201 can be set within a range of one tenth to one quarter of the working wavelength. The preset metasurface structure 210 can exhibit a special equivalent dielectric constant and equivalent magnetic permeability in electromagnetic properties. Exemplarily, the initial range of L is 4 μm to 50 μm. The range of B is smaller than the range of L.

[0084] Step S204 , according to the correlation between the length L of the resonator 201 along the first arrangement direction and the width B of the slot 202 , a combination set is formed in which each combination is distributed in a mode of equal amplitude and opposite phase within the determined value range.

[0085] Exemplarily, the electromagnetic component of the incident electromagnetic wave (light) generates an electric dipole response with the resonator 201. The resonant frequency of the electric dipole can be ω d It is expressed as:

[0086] ,

[0087] in, c is the speed of light in vacuum, x =L, y =B, ε eff is the effective dielectric constant of the medium surrounding the resonator 201. After configuring the thickness, period and other parameters of the resonator 201, the resonator 201 that meets certain L and B can excite LSPR.

[0088] The magnetic component of the incident electromagnetic field penetrates the metasurface structure 210, generating horizontal magnetic resonance between each concave resonator 201. When the equivalent dielectric constant excited by the electrical response and the equivalent magnetic permeability excited by the magnetic response are close, the impedance of the device is close to 1, and the blocking match with the free space can be achieved. At this time, the electromagnetic wave can completely enter the absorption layer 304 without reflection, achieving perfect absorption.

[0089] Step S205, numerical simulation is performed based on the combination set to obtain the range of the length L of the resonator 201 and the range of the width B of the slot 202. For example, the range of L is 25 μm to 45 μm, and the range of B is 1.75 μm to 5 μm. The concave titanium resonator within this range has a good absorption effect.

[0090] The metasurface structure 210 and the metasurface array 2 can be simulated in the finite time-domain difference method, and the resulting concave resonator makes the integrated blocking impurity band detector 100 have high absorption efficiency. The integrated blocking impurity band detector 100 provided in the embodiment of the present disclosure can be a device designed for terahertz waves.

[0091] In some comparative examples, sub-wavelength-scale optical elements such as microlens arrays can be used to converge the incident light to the center of the pixel. In order to increase the object signal, the focusing efficiency of the microlens array can be improved to maximize the focused light energy of the central pixel. Further, the noise is reduced by increasing the F number and reducing the optical crosstalk, respectively, and the background signal and the light energy overflowing to the adjacent pixels are minimized, thereby reducing the electrical crosstalk. However, after the converging microlens array is set in the blocking impurity band detector, its light field coupling interface changes from the original indirect coupling diffraction limit due to the high refractive index inside the detector to the diffraction limit of the direct coupling between the microlens array and the forward-looking light field. Therefore, when the pixel size approaches the radius of the optical diffraction Airy disk, the system resolution will be severely limited by the diffraction limit. In addition, this refractive microlens array will produce diffraction spots, which cannot break the diffraction limit limited by the optical principle, and is not conducive to further reducing spatial crosstalk. The limited numerical aperture, complex packaging and alignment, and the difficulty of curved surface formation further hinder its application in focal plane array detector integration.

[0092] refer to Fig.11 In other comparative examples, the traditional blocking impurity band structure is limited by the absorption coefficient and it is difficult to ensure the absorption efficiency. In order to improve the absorption of terahertz light by the blocking impurity band detector and improve the quantum efficiency and overall optoelectronic performance of the device, it is also urgent to design a structure for reducing reflection and enhancing absorption of the blocking impurity band detector.

[0093] The integrated impurity blocking band detector 100 of the embodiment of the present disclosure is provided with a metasurface array 2. Fig.11 As shown, when no external voltage is connected, the absorption rate of the integrated blocking impurity band detector 100 with the metasurface is significantly higher than that of the comparative blocking impurity band detector without the metasurface, especially under the condition of an incident wavelength of 72.5 μm, and can even absorb perfectly.

[0094] The integrated blocking impurity band detector 100 has at least one of the following beneficial effects: the superlens 110 is conducive to on-chip integration, and the terahertz superlens array 1 is immersed in the back-to-back integration with the pixel array of the germanium-based blocking impurity band detection structure 3, which can have the advantages of light weight and thin thickness, and can also effectively improve the terahertz band detection performance; the absorption layer 304 of the germanium-based integrated blocking impurity band detector 100 has a high doping concentration, and by etching the artificial composite metasurface array 2 on the surface of the absorption layer 304, the free charge concentration can be diluted to regenerate the plasma effect, effectively enhancing the photoelectric response of the integrated blocking impurity band detector 100; the strong local electromagnetic oscillation caused by the plasma coupling structure can make the energy band of the blocking impurity band device continuously tilted and bent, the overlap of the valence band wave function and the conduction band wave function in the band gap increases, and the probability of electrons crossing the band gap to reach the conduction band also increases, which helps the electrons blocked by the conduction band step at the interface of the blocking layer 305 and the absorption layer 304 to cross the potential barrier; further, efficient photon absorption and carrier excitation can be achieved by adjusting the size of the resonator 201. The integrated blocking impurity band detector 100 based on the back-integrated immersion metalens array 1 can provide a very effective solution to at least one of the problems such as miniaturization and resolution being limited by the diffraction limit, high device power consumption, packaging difficulties, and poor absorption effect.

[0095] refer to Fig.12 The embodiment of the present disclosure provides a method 1000 for manufacturing an integrated blocking impurity band detector. Exemplarily, the method 1000 includes steps S100 to S300.

[0096] refer to Fig.13 , step S100 , forming a blocking impurity band detection structure 3 based on the light-transmitting substrate 301 .

[0097] Exemplarily, step S100 includes: forming a first electrode layer 302, an absorption layer 304, a blocking layer 305, a second electrode layer 306 and a passivation layer 307 stacked in sequence on the first side of the light-transmitting substrate 301; and, forming a first contact electrode 308 that penetrates the passivation layer 307 and is electrically connected to the first electrode layer 302.

[0098] Step S200 may be performed before forming the absorption layer 304. Step S200 includes: forming a metasurface array 2. Specifically, a metasurface array 2 located at the focus of the superlens array 1 and used to generate surface plasmon resonance may be formed; or, a metasurface array 2 located at the focus of the superlens array 1 to be formed and used to generate surface plasmon resonance may be formed.

[0099] refer to Fig.14, step S300, forming a super lens array 1. A super lens array 1 for focusing light on the light-transmitting substrate 301 can be formed on the second side of the light-transmitting substrate 301. Exemplarily, step S100 can be performed first, and then step S300 can be performed. It can be understood that the structure obtained in each step can be regarded as a precursor structure of the next step.

[0100] In some other embodiments, step S300 may be performed first and then step S100. In some optional embodiments, step S100 and step S300 are performed separately, and then the integrated impurity blocking band detector 100 may be obtained by bonding, gluing, etc.

[0101] The method 1000 for manufacturing an integrated blocking impurity band detector according to the embodiment of the present disclosure is easy to implement and can manufacture an integrated blocking impurity band detector 100 with a small size and good light absorption effect.

[0102] Exemplarily, step S500 may be additionally performed to form the circuit structure 5. After the circuit structure 5 and the blocking impurity band detection structure 3 are obtained respectively, step S400 may be performed.

[0103] Step S400, bonding the blocking impurity band detection structure 3 to the circuit structure 5, can obtain, for example Figure 1 An integrated barrier impurity band detector 100 is shown.

[0104] In some embodiments, the microstructure of the superlens array 1 includes nanorods 101 that have undergone the aforementioned simulation design steps. The simulation design steps include: performing parameter scanning on the diameter of the nanorods 101 from 2 μm to 16 μm in 0.1 μm steps, and selecting high-resistance silicon nanorods that meet the transmittance and transmission phase conditions.

[0105] For example, reference Fig.14 , the steps of forming the superlens array 1 include: combining the high-resistance silicon wafer 1130 with the high-purity germanium transparent substrate 301 through a wafer bonding process; then patterning the wafer 1130 to obtain the light-emitting microstructure 113. First, the wafer 1130 is combined, and then photolithography is performed, which can achieve better alignment accuracy in the XY plane with the help of the overlay of the photolithography machine. Exemplarily, the superlens 110 includes a layer of microstructure. In step S300, a silicon film can be epitaxially formed on the sapphire lens substrate 112, and then a light-incoming microstructure 111 is formed based on the silicon film through a photolithography process; the lens substrate 112 is stacked on the light-emitting microstructure 113.

[0106] In some other embodiments, the superlens 110 may be formed first, and then the superlens 110 may be integrally bonded to the light-transmitting substrate 301 .

[0107] The patterning process of the wafer 1130 includes: forming an aluminum film covering the wafer 1130 as a hard mask 6, then depositing photoresist, and obtaining a patterned photoresist layer 7 through photolithography, and then transferring the pattern of the photoresist layer 7 to the hard mask 6; obtaining a light-emitting microstructure 113 through deep silicon etching, and then removing the hard mask 6.

[0108] In some embodiments, the method 1000 for manufacturing an integrated blocking impurity band detector includes the step of providing a high purity germanium transparent substrate 301. The transparent substrate 301 may be referred to as a prefabricated transparent substrate, and the doping concentration of the prefabricated transparent substrate is 1×10 13 cm -3 , the thickness is the focal length of the super lens array 1. The second side of the prefabricated light-transmitting substrate may be formed with a super lens array 1.

[0109] Step S100 includes: Step S110, forming a first electrode layer 302. The first electrode layer 302 can be formed by performing ion implantation on the first side of the prefabricated light-transmitting substrate, and a light-transmitting substrate 301 can be obtained. For example, boron ions can be implanted into the prefabricated light-transmitting substrate to a depth of 5 μm and a doping concentration of 3×10 18 cm -3 , forming a first electrode layer 302 doped with germanium and boron.

[0110] After forming the first electrode layer 302, step S200 can be performed. A 0.5 μm to 1 μm titanium film can be deposited on the first electrode layer 302 by electron beam evaporation as a metasurface precursor 20; then, laser direct writing maskless lithography can be used to obtain a metasurface array 2.

[0111] Step S100 includes step S120, forming the absorption layer 304. Exemplarily, the absorption layer 304 is formed by a chemical vapor deposition process. The material elements of the absorption layer 304 may include germanium and in-situ doped boron, and the boron doping concentration is 2×10 16 cm -3 The thickness of the absorption layer 304 may be 100 μm. The absorption layer 304 covers the metasurface array 2 , and a portion of the absorption layer 304 may fill the gaps.

[0112] Exemplarily, in step S130, a barrier layer 305 is formed by a liquid phase epitaxial growth process. The barrier layer 305 may have a thickness of 20 μm and is not doped with impurity elements. In step S130, a prefabricated barrier layer may be obtained.

[0113] Exemplarily, in step S140, the second electrode layer 306 is formed by ion implantation into the prefabricated barrier layer; the remaining structure is the barrier layer 305. The implantation depth may be 5 μm; the thickness of the barrier layer 305 between the absorption layer 304 and the second electrode layer 306 may be 15 μm. Exemplarily, boron ions are implanted into the prefabricated barrier layer, and the doping concentration is 3×10 18 cm -3 , forming a germanium-doped boron second electrode layer 306.

[0114] refer to Figure 1 , exemplarily, step S100 further includes: step S150, forming a groove penetrating the barrier layer 305 and the absorption layer 304. Then, forming a groove electrode 303 electrically connected to the first electrode layer 302. Exemplarily, the groove electrode 303 is made separately. Optionally, when forming the second electrode layer 306, the groove electrode 303 is formed simultaneously.

[0115] Step S160 , forming a passivation layer 307 by plasma enhanced chemical vapor deposition process. The passivation layer 307 may be a 200 nm thick silicon nitride layer. The passivation layer 307 covers the second electrode layer 306 and also covers the trench electrode 303 .

[0116] In step S170, an opening is formed in the passivation layer 307 by an etching process, and a first contact electrode 308 is formed by an electron beam evaporation process, which penetrates the passivation layer 307 and is electrically connected to the second electrode layer 306. Exemplarily, a second contact electrode 309 is also formed, which penetrates the passivation layer 307 and is electrically connected to the groove electrode 303. By using a relatively mature micro-nano processing technology, each manufacturing step can be reliably, effectively or conveniently implemented.

[0117] In step S400, the first contact electrode 308 and the second contact electrode 309 are respectively bonded to the corresponding third contact electrode 502 in the circuit structure 5. In the embodiment of the present disclosure, there may still be other processing steps after step S400.

[0118] Exemplarily, method 1000 includes the aforementioned numerical simulation step.

[0119] The manufacturing method provided in the embodiment of the present disclosure can be used to manufacture the integrated blocking impurity band detector 100 .

[0120] The technical features of the embodiments disclosed above can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0121] In the embodiments disclosed above, unless otherwise clearly specified and limited, the execution order of each step is not limited, for example, it can be executed in parallel, or it can be executed successively in different orders. The sub-steps of each step can also be executed alternately. The above-mentioned various forms of processes can be used, and steps can be reordered, added or deleted, as long as the desired results of the technical solution provided in the embodiment of the present disclosure can be achieved, and this document does not limit it here.

[0122] The embodiments disclosed above only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of patent protection of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the scope of patent protection required by the present application. Therefore, the scope of patent protection of the present application shall be subject to the attached claims.

Claims

1. Integrated barrier impurity band detector, characterized in that, include: Superlens arrays for focusing light; A blocking impurity band detection structure is arranged on the light-exiting side of the super lens array, and the blocking impurity band detection structure comprises a light-transmitting substrate, a first electrode layer, an absorption layer, a blocking layer, a second electrode layer, a passivation layer and a first contact electrode, wherein the light-transmitting substrate, the first electrode layer, the absorption layer, the blocking layer, the second electrode layer and the passivation layer are stacked in sequence along a direction away from the super lens array, and the first contact electrode penetrates the passivation layer and is electrically connected to the second electrode layer; and A supersurface array is arranged on the absorption layer and located at the focus of the superlens array, and the supersurface array is used to realize surface plasma resonance.

2. The integrated barrier impurity band detector according to claim 1, characterized in that: The superlens in the superlens array includes a light incident microstructure, a lens substrate and a light emitting microstructure stacked in sequence, the light incident microstructure and the light emitting microstructure respectively include nanocolumns, the lattice constant of the nanocolumns is smaller than the working wavelength, the reflection optical path difference between the light incident surface and the light emitting surface of the nanocolumns is configured to be π, and the transmission phases of the light incident microstructure and the light emitting microstructure respectively cover 0 to 2π.

3. The integrated barrier impurity band detector according to claim 2, characterized in that: The operating wavelength is 40 μm to 200 μm, and the nanorods are high-resistance silicon nanorods with a transmittance greater than 77%; The focal length of the superlens ranges from 1.25 mm to 2.75 mm, and the diameter of the superlens ranges from 1000 μm to 1500 μm.

4. The integrated blocking impurity band detector according to claim 1, characterized in that: The metasurface array includes a plurality of metasurface structures, and the metasurface structures include a plurality of periodically arranged concave resonators; the material of the metasurface array is metal.

5. The integrated blocking impurity band detector according to claim 4, characterized in that: The arrangement period of the multiple concave resonators in the metasurface structure is 30μm to 70μm; the concave resonator has a slot opened along the first arrangement direction of the metasurface structure, the width of the slot ranges from 1.75μm to 5μm, and the length of the concave resonator along the first arrangement direction ranges from 25μm to 45μm.

6. The integrated blocking impurity band detector according to claim 1, characterized in that: The material of the light-transmitting substrate includes germanium; The doping element of the absorption layer includes phosphorus or boron, and the doping concentration of the absorption layer is in the range of 1×10 16 cm -3 Up to 10×10 16 cm -3 , thickness is 100 μm to 200 μm; The doping elements of the first electrode layer and the second electrode layer include phosphorus, and the doping concentration of the first electrode layer and the second electrode layer is in the range of 1×10 18 cm -3 Up to 5×10 18 cm -3 , thickness of 2 μm to 10 μm; The barrier layer has a thickness of 20 μm to 50 μm.

7. The integrated blocking impurity band detector according to claim 4 or 5, characterized in that: The blocking impurity band detection structure further includes a groove electrode and a second contact electrode, wherein the groove electrode penetrates the blocking layer and the absorption layer and is electrically connected to the first electrode layer, the groove electrode extends along the first arrangement direction of the super surface structure, and the second contact electrode penetrates the passivation layer and is electrically connected to the groove electrode; The integrated blocking impurity band detector also includes a circuit structure and an indium bump. The circuit structure includes an amplifier and a third contact electrode electrically connected to the amplifier. The third contact electrode is bonded to the corresponding first contact electrode or the corresponding second contact electrode through the corresponding indium bump.

8. A method for manufacturing an integrated barrier impurity band detector, characterized in that include: Forming a blocking impurity band detection structure based on a light-transmitting substrate, comprising: forming a first electrode layer, an absorption layer, a blocking layer, a second electrode layer and a passivation layer stacked in sequence on a first side of the light-transmitting substrate; and forming a first contact electrode penetrating the passivation layer and electrically connected to the first electrode layer; forming a super lens array located on the second side of the light-transmitting substrate for focusing light onto the light-transmitting substrate; and Before forming the absorption layer, a supersurface array located at the focus of the superlens array and used to generate surface plasmon resonance is formed, wherein the formed absorption layer covers the supersurface array.

9. The method for manufacturing an integrated barrier impurity band detector according to claim 8, characterized in that: The microstructure of the super lens array includes nanocolumns designed by simulation, and the simulation design steps include: performing parameter scanning on the diameter of the nanocolumns from 2 μm to 16 μm in a step length of 0.1 μm, and selecting high-resistance silicon nanocolumns that meet the transmittance and transmission phase conditions; The metasurface array includes concave resonators that have been numerically simulated, and the steps of the numerical simulation include: setting periodic boundary conditions along a first arrangement direction and a second arrangement direction that are perpendicular to each other in an extension surface of the first electrode layer, wherein a notch of the concave resonator is opened along the first arrangement direction; setting a perfect matching layer boundary condition along a third direction perpendicular to the extension surface; determining the initial ranges of the length of the concave resonator along the first arrangement direction and the width of the notch according to an operating wavelength; forming a combination set in which each combination is distributed in a mode with equal amplitude and opposite phase according to a correlation between the length of the concave resonator along the first arrangement direction and the width of the notch; and performing numerical simulation based on the combination set to obtain a length range of the concave resonator and a width range of the notch.

10. The method for manufacturing an integrated barrier impurity band detector according to claim 8, characterized in that: Forming the first electrode layer by performing ion implantation on the light-transmitting substrate; Forming the absorption layer by chemical vapor deposition process; Forming the barrier layer by a liquid phase epitaxial growth process; The method further includes: forming a groove penetrating the barrier layer and the absorbent layer; wherein, the second electrode layer is formed by ion implantation into the barrier layer, and a groove electrode electrically connected to the first electrode layer is formed; Forming the passivation layer by plasma enhanced chemical vapor deposition process; By means of etching and electron beam evaporation, a first contact electrode is formed which penetrates the passivation layer and is electrically connected to the second electrode layer, and a second contact electrode is formed which penetrates the passivation layer and is electrically connected to the groove electrode; The first contact electrode and the second contact electrode are respectively bonded to corresponding third contact electrodes in the circuit structure.

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