P-type gallium oxide and preparation method of P-type gallium oxide

Abstract

The invention relates to P-type gallium oxide and a preparation method of the P-type gallium oxide. The preparation method of the P-type gallium oxide comprises the steps that a substrate is provided, the substrate is made of beta-gallium oxide, and co-doping of shallow-energy-level acceptor impurities and deep-energy-level acceptor impurities is formed on the substrate. Wherein the shallow-energy-level acceptor impurity and oxygen are elements of the same family. When the deep-energy-level acceptor impurity and the shallow-energy-level acceptor impurity are doped together, the deep-energy-level acceptor of the deep-energy-level acceptor impurity can be combined with the acceptor energy level of the shallow-energy-level acceptor impurity, the Fermi level is further pushed to the valence band top, and the combination effect remarkably improves the P-type conductive stability of the beta-gallium oxide.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a P-type gallium oxide and a method for preparing the P-type gallium oxide. Background Art

[0002] β-Gallium oxide (β-Ga2O3) has a wider bandgap, higher breakdown field strength, and can grow high-quality large-size single crystals. These characteristics make β-Ga2O3 very promising for application in high-power devices. However, due to the relatively flat valence band, large effective mass, easy formation of self-trapped holes and self-compensation effect of β-Gallium oxide (β-Ga2O3), it is difficult to achieve stable P-type doping of β-Gallium oxide (β-Ga2O3), which in turn limits its application in practical devices. Summary of the invention

[0003] Based on this, it is necessary to provide a P-type gallium oxide and a method for preparing P-type gallium oxide to address the problem that it is difficult to achieve stable P-type doping in β-gallium oxide (β-Ga2O3), which in turn limits its application in practical devices.

[0004] According to a first aspect of the present application, a method for preparing P-type gallium oxide is provided, comprising:

[0005] Providing a substrate, wherein the material of the substrate includes β-gallium oxide;

[0006] forming a co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate;

[0007] Wherein, the shallow energy level acceptor impurity and oxygen are elements of the same group.

[0008] In one embodiment, the shallow level acceptor impurity is selenium, sulfur or tellurium.

[0009] In one embodiment, the deep level acceptor impurity is magnesium, beryllium or calcium.

[0010] In one of the embodiments, forming the co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate specifically includes: forming the co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate by ion implantation;

[0011] The ion implantation dosage of the shallow energy level acceptor impurity is a, the ion implantation dosage of the deep energy level acceptor impurity is b, and the ratio of a to b is 0.9-1.1.

[0012] In one embodiment, the ion implantation dose of the shallow level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17ions / cm 2 The ion implantation dose of the deep level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 .

[0013] In one embodiment, the ion implantation energy of the shallow level acceptor impurity is 10 kV-200 kV;

[0014] The ion implantation energy of the deep energy level acceptor impurities is 10 kV-200 kV.

[0015] In one embodiment, the ion implantation energy of the shallow energy level acceptor impurity is ckv, the ion implantation energy of the deep energy level acceptor impurity is dkv, and the ratio of c to d is 2-3.

[0016] In one of the embodiments, the method for preparing the P-type gallium oxide further includes: annealing the substrate in an oxygen environment to activate the shallow energy level acceptor impurities and the deep energy level acceptor impurities.

[0017] In one of the embodiments, in the annealing process of annealing the substrate to activate the shallow energy level acceptor impurities and the deep energy level acceptor impurities, the annealing time is 1 min-5 min and the annealing temperature is 500° C.-900° C.

[0018] According to a second aspect of the present application, a P-type gallium oxide is provided, which is prepared using the method for preparing the P-type gallium oxide of any of the above embodiments.

[0019] In the technical solution of the present application, when shallow-level acceptor impurities are doped into the lattice of β-Ga2O3, acceptor energy levels are introduced near the top of the valence band. Combined with the fact that shallow-level acceptor impurities and oxygen are elements of the same group, these acceptor energy levels are mainly composed of the 4s orbits of shallow-level acceptor impurities, which can effectively approach the top of the valence band, thereby lowering the Fermi level and making it closer to the top of the valence band, which provides potential acceptor energy levels for the P-type conductivity of the substrate. In addition, deep-level acceptor impurities are also doped into the substrate to form deep-level acceptor defects. Although deep-level acceptor impurities alone may not be sufficient to form stable P-type conductivity, when deep-level acceptor impurities are co-doped with shallow-level acceptor impurities, the deep-level acceptors of the deep-level acceptor impurities can combine with the acceptor levels of the shallow-level acceptor impurities, further pushing the Fermi level to the top of the valence band. This combination effect significantly improves the stability of the P-type conductivity of β-gallium oxide. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1A comparison table of parameters such as doping concentration and electrical properties of shallow energy level acceptor impurities and deep energy level acceptor impurities at different ion implantation doses is shown.

[0021] Figure 2-Figure 5 The secondary ion mass spectra of shallow level acceptor impurities and deep level acceptor impurities at different ion implantation doses are shown.

[0022] Figure 6 A simulation curve representing the doping concentration of a shallow level acceptor impurity versus the doping depth of the shallow level acceptor impurity and a simulation curve representing the doping concentration of a deep level acceptor impurity versus the doping depth of the deep level acceptor impurity are shown.

[0023] Figure 7 The current-voltage variation curves of a blank sample and the P-type gallium oxide of the present application are shown.

[0024] Figure 8 A comparison table of electrical properties of a blank sample and P-type gallium oxide is shown. DETAILED DESCRIPTION

[0025] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0026] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0027] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0028] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0029] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0030] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0031] An embodiment of the present application provides a method for preparing P-type gallium oxide, comprising the following steps:

[0032] S10, providing a substrate, wherein the material of the substrate includes β-gallium oxide.

[0033] Specifically, the substrate can be made of undoped β-gallium oxide (β-Ga2O3) single crystal as the base material, and the length and width of the substrate are 10×10 mm. 2 The thickness of the substrate is 0.5 mm, and the substrate can be prepared by a guided mode growth (EFG) method.

[0034] S20. Co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities is formed on the substrate. The shallow energy level acceptor impurities are elements of the same group as oxygen. The shallow energy level acceptor impurities are used to introduce acceptor energy levels into the substrate, and the deep energy level acceptor impurities are used to introduce deep energy level acceptor defects into the substrate.

[0035] The co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities can be formed on the substrate by ion implantation, or by epitaxial growth, such as the growth of gallium selenide oxide and gallium magnesium oxide by molecular beam epitaxy (MBE) or vapor phase epitaxy (VPE).

[0036] In terms of the properties of gallium oxide itself, the valence band of gallium oxide is flat, the top dispersion is small, the effective mass is large, and the state density is large, which easily leads to the capture of free holes by local lattice distortion, forming self-trapped holes, so it is difficult to form P-type doping. When shallow-level acceptor impurities are doped into the lattice of β-Ga2O3, acceptor energy levels are introduced near the top of the valence band. Combined with the fact that shallow-level acceptor impurities and oxygen are elements of the same group, these acceptor energy levels are mainly composed of the 4s orbitals of shallow-level acceptor impurities, which can effectively approach the top of the valence band, thereby lowering the Fermi level and making it closer to the top of the valence band, which provides potential acceptor energy levels for the P-type conduction of the substrate. In addition, deep level acceptor impurities are doped into the substrate to form deep level acceptor defects. Although the deep level acceptor impurities alone may not be sufficient to form stable P-type conduction, when the deep level acceptor impurities are co-doped with shallow level acceptor impurities, the deep level acceptors of the deep level acceptor impurities can combine with the acceptor energy levels of the shallow level acceptor impurities, further pushing the Fermi level to the top of the valence band. This combination effect significantly improves the stability of P-type conduction of β-gallium oxide.

[0037] In some embodiments, the shallow level acceptor impurity is selenium, sulfur, or tellurium.

[0038] Selenium, sulfur and tellurium are all elements of the same family as oxygen. Therefore, when shallow energy level acceptor impurities are doped into the lattice of β-Ga2O3, acceptor energy levels are introduced near the top of the valence band. These acceptor energy levels are mainly composed of the 4s orbitals of selenium ions, sulfur ions or tellurium ions, which can effectively approach the top of the valence band, thereby lowering the Fermi level and bringing it closer to the top of the valence band. This provides potential acceptor energy levels for the P-type conduction of the substrate.

[0039] In some embodiments, the deep level acceptor impurity is magnesium, beryllium, or calcium.

[0040] Magnesium ions, beryllium ions or calcium ions can all form deep energy level acceptor defects, and when deep energy level acceptor impurities are co-doped with shallow energy level acceptor impurities, the deep energy level acceptors of the shallow energy level acceptor impurities can combine with the acceptor energy levels of the shallow energy level acceptor impurities, further pushing the Fermi level to the top of the valence band. This combination effect significantly improves the stability of P-type conductivity of β-gallium oxide.

[0041] In some embodiments, forming a co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate specifically includes: forming a co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate by ion implantation, wherein the ion implantation dose of the shallow energy level acceptor impurities is a, the ion implantation dose of the shallow energy level acceptor impurities is b, and the ratio of a to b is 0.9-1.1.

[0042] Illustratively, the ratio of a to b is 0.9, 1 or 1.1.

[0043] In other words, the ion implantation dose of the shallow level acceptor impurity tends to be equal to that of the deep level acceptor impurity, which is beneficial to improving the uniformity of co-doping, so that the deep level acceptor of the shallow level acceptor impurity can better combine with the acceptor energy level of the shallow level acceptor impurity, thereby better improving the stability of the P-type conductivity of β-gallium oxide.

[0044] In some embodiments, the ion implantation dose of the shallow level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 The ion implantation dose of deep level acceptor impurities is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 .

[0045] For example, the ion implantation dose of the shallow level acceptor impurity is 1×10 16 ions / cm 2 , 5×10 16 ions / cm 2 or 1×10 17 ions / cm 2 .

[0046] For example, the ion implantation dose of the deep level acceptor impurity is 1×10 16 ions / cm 2 , 5×10 16 ions / cm 2 or 1×10 17 ions / cm 2 .

[0047] See also Figure 1-Figure 5 , Figure 1 A comparison table of the peak doping concentration and electrical properties of shallow-level acceptor impurities and deep-level acceptor impurities at different ion implantation doses is given in the paper. Figure 2-Figure 5 The secondary ion mass spectra of shallow energy level acceptor impurities and deep energy level acceptor impurities at different ion implantation doses are given in .

[0048] Figure 2-Figure 5 In the above equation, the shallow level acceptor impurity is selenium, and the deep level acceptor impurity is magnesium. Figure 2 Where L11 and L12 represent the ion implantation dose of the shallow energy level acceptor impurity and the ion implantation dose of the deep energy level acceptor impurity, respectively, both of which are 1×10 15 ions / cm 2 In the case of , the curve of the doping concentration of the shallow energy level acceptor impurity varies with the doping depth of the shallow energy level acceptor impurity, and the curve of the doping concentration of the deep energy level acceptor impurity varies with the doping depth of the deep energy level acceptor impurity. Figure 3 Where L21 and L22 represent the ion implantation dose of the shallow energy level acceptor impurity and the ion implantation dose of the deep energy level acceptor impurity, respectively, both of which are 1×10 16 ions / cm 2 In the case of , the curve of the doping concentration of the shallow energy level acceptor impurity varies with the doping depth of the shallow energy level acceptor impurity, and the curve of the doping concentration of the deep energy level acceptor impurity varies with the doping depth of the deep energy level acceptor impurity. Figure 4 Where L31 and L32 represent the ion implantation dose of the shallow energy level acceptor impurity and the ion implantation dose of the deep energy level acceptor impurity, both of which are 5×10 16 ions / cm 2 In the case of , the curve of the doping concentration of the shallow energy level acceptor impurity varies with the doping depth of the shallow energy level acceptor impurity, and the curve of the doping concentration of the deep energy level acceptor impurity varies with the doping depth of the deep energy level acceptor impurity. Figure 4 Where L41 and L42 represent the ion implantation dose of the shallow energy level acceptor impurity and the ion implantation dose of the deep energy level acceptor impurity, respectively, both of which are 1×10 17 ions / cm 2 In the case of , the curve of the doping concentration of the shallow energy level acceptor impurity varies with the doping depth of the shallow energy level acceptor impurity, and the curve of the doping concentration of the deep energy level acceptor impurity varies with the doping depth of the deep energy level acceptor impurity.

[0049] from Figure 1-Figure 5 It can be seen that the ion implantation dose of the shallow energy level acceptor impurity and the ion implantation dose of the deep energy level acceptor impurity are both 1×10 15 ions / cm 2 When the ion implantation dose of the shallow level acceptor impurity is selected to be 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 , and the ion implantation dose of the deep level acceptor impurity is selected to be 1×10 16 ions / cm 2~1×10 17 ions / cm 2 When the P-type gallium oxide is prepared by the method for preparing the P-type gallium oxide of the present application, the electrical properties are good.

[0050] Of course, the SRIM software can also be used to simulate the doping conditions of shallow energy level acceptor impurities so that appropriate ion implantation doses can be selected for both shallow energy level acceptor impurities and deep energy level acceptor impurities.

[0051] In some embodiments, the ion implantation energy of the shallow level acceptor impurities is 10 kV-200 kV, and the ion implantation energy of the deep level acceptor impurities is 10 kV-200 kV.

[0052] For example, the ion implantation energy of the shallow level acceptor impurity is 10 kV, 50 kV, 60 kV, 90 kV, 100 kV, 150 kV or 200 kV. For example, the ion implantation energy of the deep level acceptor impurity is 10 kV, 20 kV, 30 kV, 40 kV, 50 kV, 60 kV, 70 kV, 80 kV, 90 kV, 100 kV, 120 kV, 140 kV, 160 kV, 180 kV or 200 kV.

[0053] In this way, the ion implantation energy of the shallow energy level acceptor impurities and the ion implantation energy of the deep energy level acceptor impurities are selected within a suitable range, which is beneficial to the implantation of the shallow energy level acceptor impurities and the deep energy level acceptor impurities to a preset depth in the substrate, and further beneficial to the optimization of the doping positions of the shallow energy level acceptor impurities and the deep energy level acceptor impurities, and to improve the uniformity and effectiveness of the doping of the shallow energy level acceptor impurities and the deep energy level acceptor impurities.

[0054] In some embodiments, the ion implantation energy of the shallow level acceptor impurity is ckv, the ion implantation energy of the deep level acceptor impurity is dkv, and the ratio of c to d is 2-3.

[0055] Illustratively, the ratio of c to d is 2, 2.5 or 3.

[0056] For example, the ion implantation energy of shallow level acceptor impurities is 50 kV, and that of deep level acceptor impurities is 20 kV; for another example, the ion implantation energy of shallow level acceptor impurities is 60 kV, and that of deep level acceptor impurities is 30 kV; for another example, the ion implantation energy of shallow level acceptor impurities is 90 kV, and that of deep level acceptor impurities is 30 kV.

[0057] Since the atomic mass corresponding to the shallow energy level acceptor impurity is greater than the atomic mass corresponding to the deep energy level acceptor impurity, setting the ratio of c to d to 2-3 is beneficial for making the shallow energy level acceptor impurities and the deep energy level acceptor impurities approximately at the same preset depth in the substrate, which is beneficial for better improving the uniformity and effectiveness of co-doping of the shallow energy level acceptor impurities and the deep energy level acceptor impurities, so that the deep energy level acceptor of the shallow energy level acceptor impurity can better combine with the acceptor energy level of the shallow energy level acceptor impurity, thereby better improving the stability of P-type conductivity of β-gallium oxide.

[0058] In some embodiments, the ratio of c to d is selected as a suitable ratio using SRIM software, such as 2-3.

[0059] like Figure 6 As shown, an example is given in which the ratio of c to d is 2, wherein the shallow energy level acceptor impurity is selected as selenium, the deep energy level acceptor impurity is selected as magnesium, the ion implantation energy of the shallow energy level acceptor impurity is 50 kV, and the ion implantation energy of the deep energy level acceptor impurity is 20 kV. Figure 6 In the figure, L51 represents the simulated curve of the doping concentration of the shallow energy level acceptor impurity versus the doping depth of the shallow energy level acceptor impurity, and L52 represents the simulated curve of the doping concentration of the deep energy level acceptor impurity versus the doping depth of the deep energy level acceptor impurity. Figure 6 It can be seen that the peak doping concentration of the shallow energy level acceptor impurities and the peak doping concentration of the deep energy level acceptor impurities can roughly correspond to the same doping depth, which is about 200 angstroms. This shows that by limiting the ratio of c to d, the shallow energy level acceptor impurities and the deep energy level acceptor impurities can be roughly located at the same preset depth in the substrate, which is beneficial to better improve the uniformity and effectiveness of the co-doping of the shallow energy level acceptor impurities and the deep energy level acceptor impurities, and thus better improve the stability of the P-type conductivity of β-gallium oxide.

[0060] In some embodiments, the method for preparing P-type gallium oxide further includes: S30, annealing the substrate in an oxygen environment to activate shallow energy level acceptor impurities and deep energy level acceptor impurities.

[0061] In step S30, the annealing time is 1 min-5 min, and the annealing temperature is 500°C-900°C.

[0062] For example, the annealing time is 1 min, 2 min, 3 min, 4 min or 5 min, and the annealing temperature is 500°C, 600°C, 700°C, 800°C or 900°C.

[0063] For example, step S30 includes: performing rapid annealing in an oxygen environment at 850° C. to repair lattice damage generated during ion implantation and activate doping elements.

[0064] In this way, the lattice damage caused by ion implantation can be well repaired, oxygen vacancies and other defects can be reduced, and shallow energy level acceptor impurities and deep energy level acceptor impurities can be well activated, thereby improving the electrical properties of the material.

[0065] After P-type gallium oxide is prepared using the preparation method of P-type gallium oxide of the present application, a metal contact layer, such as titanium and / or gold (for example, the thickness of titanium is 20 nm and the thickness of gold is 80 nm), can be deposited on the P-type gallium oxide, and rapid thermal annealing is performed in a nitrogen environment at 470°C; and the conductivity type and electrical properties of the P-type gallium oxide are evaluated by the Van der Pauw method.

[0066] like Figure 7 As shown in FIG. 1 , the current-voltage variation curves of the blank sample (the blank sample is undoped gallium oxide) and the P-type gallium oxide of the present application are given. It can be seen that the ion implantation dose of the shallow energy level acceptor impurity is 1×10 16 ions / cm 2 The ion implantation dose of deep level acceptor impurities is 1×10 16 ions / cm 2 When , P-type gallium oxide exhibits P-type conductive characteristics.

[0067] The Van der Pauw method shows that the ion implantation dose of the shallow level acceptor impurity is 1×10 16 ions / cm 2 The ion implantation dose of deep level acceptor impurities is 1×10 16 ions / cm 2 When the carrier concentration of P-type gallium oxide is 2.55×10 16 cm -3 , the Hall coefficient is 2.45×10 3 , the resistivity is about 5731Ω·cm. It can be seen that the electrical properties of the P-type gallium oxide of the present application are significantly better than those of the blank sample (unadopted gallium oxide).

[0068] In summary, the preparation method of P-type gallium oxide of the present application selects the ratio of the ion implantation dose of the shallow energy level acceptor impurity to the ion implantation dose of the deep energy level acceptor impurity as 0.9-1.1, which is conducive to improving the uniformity of co-doping and thus achieving a better p-type doping effect. And the ratio of the ion implantation energy of the shallow energy level acceptor impurity to the ion implantation energy of the deep energy level acceptor impurity is selected as 2-3, which is conducive to the shallow energy level acceptor impurity and the deep energy level acceptor impurity reaching approximately the same preset depth in the substrate. In this way, the doping position and concentration of the shallow energy level acceptor impurity and the deep energy level acceptor impurity can be optimized, the introduction of defects can be reasonably controlled, and the adverse effects of unnecessary defects on the conductive properties of the material can be reduced. The uniformity and effectiveness of co-doping can also be improved, which is conducive to regulating the electronic structure of β-gallium oxide (β-Ga2O3), improving the p-type conductive properties of β-Ga2O3, and providing new possibilities for the development of high-performance semiconductor devices.

[0069] After co-doping, annealing treatment can effectively repair the lattice damage caused by ion implantation, reduce oxygen vacancies and other defects, and activate shallow energy level acceptor impurities and deep energy level acceptor impurities, thereby improving the electrical properties of the material.

[0070] An embodiment of the present application further discloses a P-type gallium oxide, which is prepared using the preparation method of the P-type gallium oxide in any of the above embodiments.

[0071] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0072] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for preparing P-type gallium oxide, characterized in that: include: Providing a substrate, wherein the material of the substrate includes β-gallium oxide; forming a co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate; Wherein, the shallow energy level acceptor impurity and oxygen are elements of the same group.

2. The method for preparing P-type gallium oxide according to claim 1, characterized in that: The shallow energy level acceptor impurities are selenium, sulfur or tellurium.

3. The method for preparing P-type gallium oxide according to claim 1, characterized in that: The deep energy level acceptor impurities are magnesium, beryllium or calcium.

4. The method for preparing P-type gallium oxide according to claim 1, characterized in that: The forming of co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate specifically includes: forming co-doping of shallow energy level acceptor impurities and deep energy level acceptor impurities on the substrate by ion implantation; The ion implantation dosage of the shallow energy level acceptor impurity is a, the ion implantation dosage of the deep energy level acceptor impurity is b, and the ratio of a to b is 0.9-1.

1.

5. The method for preparing P-type gallium oxide according to claim 4, characterized in that: The ion implantation dose of the shallow level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 The ion implantation dose of the deep level acceptor impurity is 1×10 16 ions / cm 2 ~1×10 17 ions / cm 2 .

6. The method for preparing P-type gallium oxide according to claim 4, characterized in that: The ion implantation energy of the shallow energy level acceptor impurity is 10kv-200kv; The ion implantation energy of the deep energy level acceptor impurities is 10 kV-200 kV.

7. The method for preparing P-type gallium oxide according to claim 6, characterized in that: The ion implantation energy of the shallow energy level acceptor impurity is ckv, the ion implantation energy of the deep energy level acceptor impurity is dkv, and the ratio of c to d is 2-3.

8. The method for preparing P-type gallium oxide according to claim 4, characterized in that: The method for preparing the P-type gallium oxide further includes: annealing the substrate in an oxygen environment to activate the shallow energy level acceptor impurities and the deep energy level acceptor impurities.

9. The method for preparing P-type gallium oxide according to claim 8, characterized in that: In the annealing process of annealing the substrate to activate the shallow energy level acceptor impurities and the deep energy level acceptor impurities, the annealing time is 1 min-5 min and the annealing temperature is 500° C.-900° C.

10. A P-type gallium oxide, characterized in that: The P-type gallium oxide is prepared by the preparation method of any one of claims 1 to 9.

Images