Organic compound and light-emitting device

Abstract

Provided are a novel organic compound and a light-emitting device having excellent convenience, usefulness, or reliability. In general formula (G2), X represents a sulfur atom or an oxygen atom; r1, R2, R6 to R9, R20 to R26, R30 to R34, R40 to R43, R103 to R105, R135 and R136 each independently represent hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, a substituted or unsubstituted dibenzothienyl group or a substituted or unsubstituted dibenzofuranyl group; and n represents an integer of 1 to 4, and when n is 2 or more, the plurality of R40 may be the same as or different from each other, and the plurality of R41 to R43 may be the same as each other. # imgabs0 #

Description

Technical Field

[0001] One embodiment of the present invention relates to an organic compound, a light-emitting device, a light-receiving device, a light-receiving device, a light-emitting device, a light-receiving device, a display device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification, etc., relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a product, or a composition of matter. Therefore, more specifically, as an example of the technical field of one embodiment of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, camera devices, driving methods of these devices, or manufacturing methods of these devices can be cited. Background Art

[0002] Organic EL devices (organic EL elements) represented by light-emitting devices, light-receiving devices, and light-receiving and light-emitting devices utilizing electroluminescence using organic compounds (organic electroluminescence) are being actively put into practical use.

[0003] For example, in the basic structure of a light-emitting device, an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying voltage to the device, carriers are injected, and the recombination energy of the carriers is utilized to obtain light emission from the light-emitting material.

[0004] In addition, in the basic structure of a light-receiving device, an organic compound layer (active layer) containing a light-emitting material is sandwiched between a pair of electrodes. The device absorbs light energy to generate carriers, and can obtain electrons from the photoelectric conversion material.

[0005] For example, a functional panel in which pixels in a display region include a light-emitting element (light-emitting device) and a photoelectric conversion element (light-receiving device) is known (Patent Document 1).

[0006] As described above, displays and lighting devices using organic EL devices can be suitably used in various electronic devices, and research and development of organic EL devices having better efficiency and life are being actively pursued.

[0007] The characteristics of organic EL devices have been significantly improved, but they are still not enough to meet the high demands for various characteristics such as efficiency and durability. In particular, in order to solve the problems unique to EL such as burn-in, the efficiency drop caused by degradation should be as small as possible.

[0008] Since degradation is greatly affected by the luminescent center substance and the materials surrounding it, the development of organic compound materials with excellent characteristics has become increasingly active.

[0009] [Patent Document 1] WO2020 / 152556 Summary of the invention

[0010] An object of one embodiment of the present invention is to provide a novel organic compound. In addition, an object of one embodiment of the present invention is to provide an organic compound having a stable excited state. In addition, an object of one embodiment of the present invention is to provide an organic compound that can be used as a hole transport material. In addition, an object of one embodiment of the present invention is to provide an organic compound that is easily synthesized. In addition, an object of one embodiment of the present invention is to provide a light-emitting device with a long driving life. In addition, an object of one embodiment of the present invention is to provide a light-emitting device with a small voltage change during driving. In addition, an object of one embodiment of the present invention is to provide a novel light-emitting device. In addition, an object of one embodiment of the present invention is to reduce the manufacturing cost of a light-emitting device. In addition, an object of one embodiment of the present invention is to provide a light-emitting device, an electronic device, or a lighting device with low power consumption.

[0011] In addition, an object of one embodiment of the present invention is to provide an organic compound that selectively deuterates a portion of its structure. In addition, an object of one embodiment of the present invention is to perform molecular design that can reduce the complexity of the synthesis route, the high temperature and high pressure of the synthesis, etc., and to synthesize an organic compound that has undergone such molecular design.

[0012] Note that the recording of these purposes does not prevent the existence of other purposes. One mode of the present invention does not need to achieve all of the above purposes. Purposes other than the above purposes can be clearly seen from the description of the specification, drawings, claims, etc., and can be extracted from these descriptions.

[0013] One embodiment of the present invention is an organic compound represented by General Formula (G2).

[0014] [Chemical formula 1]

[0015] Note that in the general formula (G2), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, a substituted or unsubstituted dibenzothienyl group or a substituted or unsubstituted dibenzofuranyl group, and n represents an integer from 1 to 4. When n is 2 or more, a plurality of R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0016] One embodiment of the present invention is an organic compound represented by General Formula (G3).

[0017] [Chemical formula 2]

[0018] Note that in the general formula (G3), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0019] One embodiment of the present invention is an organic compound represented by General Formula (G4).

[0020] [Chemical formula 3]

[0021] Note that in the general formula (G4), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 30 To R 34 , R40 To R 43 , R 103 To R 105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0022] One embodiment of the present invention is an organic compound represented by General Formula (G5).

[0023] [Chemical formula 4]

[0024] Note that in the general formula (G5), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0025] One embodiment of the present invention is an organic compound represented by General Formula (G6).

[0026] [Chemical formula 5]

[0027] Note that in the general formula (G6), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 and R 40 To R 43each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 34 , R 135 and R 136 represents hydrogen (including deuterium), n represents an integer from 1 to 4, and when n is 2 or more, a plurality of R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0028] One embodiment of the present invention is an organic compound represented by General Formula (G7).

[0029] [Chemical formula 6]

[0030] Note that in the general formula (G7), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 40 To R 43 and R 103 To R 105 each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 34 , R 135 and R 136 represents hydrogen (including deuterium), n represents an integer from 1 to 4, and when n is 2 or more, a plurality of R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0031] One embodiment of the present invention is an organic compound represented by General Formula (G8).

[0032] [Chemical formula 7]

[0033] Note that in the general formula (G8), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 36 , R40 To R 43 and R 104 To R 106 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0034] One embodiment of the present invention is an organic compound represented by General Formula (G9).

[0035] [Chemical formula 8]

[0036] Note that in the general formula (G9), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 20 To R 26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0037] One embodiment of the present invention is an organic compound represented by General Formula (G10).

[0038] [Chemical formula 9]

[0039] Note that in the general formula (G10), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 30 To R 36 , R 40 To R43 and R 104 To R 106 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0040] One embodiment of the present invention is an organic compound represented by General Formula (G11).

[0041] [Chemical formula 10]

[0042] Note that in the general formula (G11), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 and R 40 To R 43 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0043] One embodiment of the present invention is a light-emitting device using the above-mentioned organic compound. Another embodiment of the present invention is a light-receiving device using the above-mentioned organic compound.

[0044] Furthermore, one embodiment of the present invention is a light-emitting device including: a first electrode; a second electrode; and an organic compound layer interposed between the first electrode and the second electrode, wherein the organic compound layer includes an organic compound represented by General Formula (G1).

[0045] [Chemical formula 11]

[0046] Note that in the general formula (G1), X represents a sulfur atom or an oxygen atom, and R 1 To R 9 , R 20 To R 26 , R 30 To R36 and R 40 To R 43 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0047] In addition, one embodiment of the present invention is a light-emitting device including the light-emitting device of each structure described above, and a transistor or a substrate.

[0048] In addition, one embodiment of the present invention is an electronic device including the light emitting device of each of the above structures, a detection unit, an input unit, or a communication unit.

[0049] In addition, one embodiment of the present invention is a lighting device including the light emitting device having the above-mentioned structures and a housing.

[0050] According to one embodiment of the present invention, a novel organic compound can be provided. In addition, according to one embodiment of the present invention, an easily synthesized organic compound can be provided. In addition, according to one embodiment of the present invention, a novel light-emitting device can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with a long driving life can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with a small voltage change during driving can be provided. In addition, according to one embodiment of the present invention, the manufacturing cost of the light-emitting device can be reduced. In addition, according to one embodiment of the present invention, a light-emitting device, electronic device or lighting device with low power consumption can be provided.

[0051] Note that the description of these effects does not prevent the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of the above effects. Note that effects other than the above can be known and extracted from the description of the specification, drawings, claims, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figures 1A to 1E is a diagram illustrating the structure of a light emitting device; Figure 2A and Figure 2B is a top view and a cross-sectional view of the light emitting device; FIG. 3A to FIG. 3D is a diagram showing a light emitting device; FIG. 4A to FIG. 4E is a cross-sectional view showing an example of a method for manufacturing a light emitting device; FIG. 5A to FIG. 5E is a cross-sectional view showing an example of a method for manufacturing a light emitting device; FIG. 6A to FIG. 6C is a cross-sectional view showing an example of a method for manufacturing a light emitting device; FIG. 7A to FIG. 7C is a cross-sectional view showing an example of a method for manufacturing a light emitting device; FIG. 8A to FIG. 8C is a cross-sectional view showing an example of a method for manufacturing a light emitting device; 9A to 9C is a cross-sectional view showing an example of a method for manufacturing a light emitting device; FIG. 10A to FIG. 10C is a cross-sectional view showing an example of a method for manufacturing a light emitting device; FIG. 11A to FIG. 11G is a top view showing a structural example of a pixel; FIG. 12A to FIG. 12I is a top view showing a structural example of a pixel; Fig.13A and Fig. 13B is a perspective view showing a structural example of a display module; Fig.14A and Fig. 14B is a cross-sectional view showing a structural example of a light emitting device; Fig.15 is a perspective view showing a structural example of a light emitting device; Fig.16A is a cross-sectional view showing a structural example of a light emitting device, Fig. 16B and Fig. 16C is a cross-sectional view showing a structural example of a transistor; Fig.17 is a cross-sectional view showing a structural example of a light emitting device; 18A to 18D is a cross-sectional view showing a structural example of a light emitting device; FIG. 19A to FIG. 19D is a diagram showing an example of an electronic device; FIG. 20A to FIG. 20F is a diagram showing an example of an electronic device; FIG. 21A to FIG. 21G is a diagram showing an example of an electronic device; Fig. 22 is the 1H NMR spectrum of the organometallic complex prepared in the examples; Fig.23 is a graph illustrating the absorption spectrum and emission spectrum of the toluene solution of the organometallic complex prepared in Example; Fig.24 is a diagram illustrating a device structure of a sample according to an embodiment; Fig.25is a graph showing luminance-current density characteristics of samples according to the embodiment; Fig.26 is a graph showing luminance-voltage characteristics of samples according to the embodiment; Fig. 27 is a graph showing current density-voltage characteristics of a sample according to an embodiment; Fig.28 is a graph showing external quantum efficiency-current density characteristics of samples according to the embodiment; Fig.29 is a graph showing electroluminescence spectra of samples according to the example. DETAILED DESCRIPTION

[0053] Implementation Method 1 In this embodiment, an organic compound and a thin film which are one embodiment of the present invention are described.

[0054] The organic compound in this embodiment is an arylamine derivative having the following structure: The arylamine derivative has both sufficient hole transport properties and a wide energy gap, and is a substance very suitable for use as a material for a light-emitting device.

[0055] <Example 1 of organic compound> One embodiment of the present invention is an organic compound represented by General Formula (G2).

[0056] [Chemical formula 12]

[0057] Note that in the general formula (G2), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, a substituted or unsubstituted dibenzothienyl group or a substituted or unsubstituted dibenzofuranyl group, and n represents an integer from 1 to 4. When n is 2 or more, a plurality of R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0058] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0059] Note that when X of the organic compound represented by the general formula (G2) is an oxygen atom, its refractive index is smaller than that of the case where X is a sulfur atom. That is to say, when used in a light-emitting device, the light extraction efficiency is improved, so it is preferred. In addition, when X is an oxygen atom, the sublimation property is improved, and high purity can be achieved by sublimation purification, so it is preferred. Therefore, a high-purity film can be obtained when deposited by an evaporation process, thereby obtaining a light-emitting device, a light-receiving device, and a light-receiving device with high reliability. In addition, the organic compound of the present invention can be applied to an evaporation process.

[0060] In the organic compound represented by the general formula (G2), in the case of R 20 To R 26 The naphthyl group or the R 40 To R 43 When the bonded phenylene group does not have a substituent, it is easy to achieve high purity of the organic compound. In addition, since the steric hindrance is also reduced, the orbit of the HOMO is stable, thereby obtaining a light-emitting device, a light-receiving device, and a light-receiving device with high reliability. In addition, when the ends of the n phenylene groups connected to each other are bonded to a naphthyl group, the structural change between the ground state and the excited state becomes smaller. Therefore, the excited state is stable, the reliability of the device using the organic compound represented by the general formula (G2) is improved, and a high carrier mobility can be achieved.

[0061] In the organic compound represented by the general formula (G2), the N atom at the center is bonded to a fluorenyl, a dibenzofuranyl or a dibenzothienyl and a naphthyl, so that the skeleton composed of more than 2 rings is arranged at the end of the molecular structure. By adopting the molecular structure, the change of the molecular structure between the ground state and the excited state becomes smaller, and the excited state becomes stable, so in the case of using the organic compound of the present invention, a light-emitting device with high reliability, a light-receiving device, and a light-receiving device can be provided. In addition, phenylene is bonded to amine, so that reliability is improved and carrier transportability is improved. By adopting the molecular structure, even if the three ends of the amine have a huge skeleton composed of more than two rings, an aniline skeleton with high hole transportability is included, so that a hole transportability is high. Organic compound. Therefore, in the case of using the organic compound of the present invention, a light-emitting device, a light-receiving device, and a light-receiving device with low driving voltage and low power consumption can be provided.

[0062] In the general formula (G2), by having a fluorenyl-4-amine skeleton in the molecular structure, the HOMO can be suppressed from being too high. Specifically, an organic compound having a HOMO energy level value lower than -5.4eV can be provided. In the case where the organic compound of the present invention is used in a layer adjacent to the light-emitting layer in a light-emitting device, the hole injection property of the light-emitting layer is improved by a HOMO energy level value lower than -5.4eV, thereby providing a light-emitting device with a low driving voltage. In addition, when the organic compound of the present invention is used in a carrier transport layer between an active layer and an electrode of a light-receiving device, the dark current becomes smaller, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used in a hole transport layer common to a light-emitting device and a light-receiving device, a light-receiving device having both a low driving voltage and a light-receiving device with high sensitivity can be provided, so it is preferred. In addition, since the two benzene rings of the fluorene skeleton are bonded to the amino group in the ortho position, the change in the molecular structure between the ground state and the excited state becomes smaller, and the excited state becomes stable. When the organic compound of the present invention is used in each device, a device with high reliability can be provided.

[0063] By having a dibenzothiophene-4-amine skeleton or a dibenzofuran-4-amine skeleton, a light-emitting device, a light-receiving device or a light-receiving device with high reliability can be provided. This is because the following reasons: by using an amino group to replace the highly reactive hydrogen (or deuterium) bonded to the carbon adjacent to oxygen or sulfur, the change in the molecular structure between the ground state and the excited state becomes smaller, and the excited state is stabilized, so it is not easy for the organic compound itself to deteriorate, and the reliability of each device is improved. In addition, compared with the molecular structure in which the amine is bonded to the 2nd or 3rd position of dibenzothiophene or dibenzofuran, by having a dibenzothiophene-4-amine skeleton or a dibenzofuran-4-amine skeleton, the HOMO energy level value is lower. Therefore, in the case where the organic compound of the present invention is used for a layer adjacent to the light-emitting layer, the hole injection property of the light-emitting layer is improved, so that a light-emitting device with a low driving voltage can be provided. In addition, the dark current of the light-receiving device becomes smaller, thereby providing a light-receiving device with high sensitivity. Furthermore, when the organic compound of the present invention is used for a hole transport layer common to a light-emitting device and a light-receiving device, a light-emitting device having both a light-emitting device with a low driving voltage and a light-receiving device with a high sensitivity can be provided.

[0064] By having a dibenzothiophene-1-amine skeleton or a dibenzofuran-1-amine skeleton, a light-emitting device, a light-receiving device or a light-receiving device with high reliability can be provided. This is because when the amino group is bonded to the biphenyl skeleton included in the dibenzothiophene skeleton or the dibenzofuran skeleton at the ortho position, it becomes a very large substitution position, the structural change between the ground state and the excited state becomes small, and the organic compound itself is not easily degraded, so the reliability of the device is improved.

[0065] In the above general formula (G2), R1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 or R 136 In the case of an alkyl group having 1 to 6 carbon atoms, for example, methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl and 2,3-dimethylbutyl can be used.

[0066] In the above general formula (G2), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 or R 136 In the case of a cycloalkyl group having 3 to 10 carbon atoms, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, 1-methylcyclohexyl, cycloheptyl, adamantyl, bicyclo[2,2,2]octyl, norbornyl and the like can be used.

[0067] In the above general formula (G2), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 or R 136 In the case of an aryl group having 10 to 30 carbon atoms, for example, naphthyl, anthracenyl, fluorenyl, dibenzothiophenyl, dibenzofuranyl, diphenylfluorenyl, spirobifluorenyl, pyrenyl, phenanthrenyl, triphenylene, perylene, naphthacene, Ji et al.

[0068] Specifically, for example, R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 or R 136 It is represented by the following structural formula (1-1) to structural formula (1-33). Note that when the following structural formula (1-21) to structural formula (1-33) are used as substituents, any one of the carbon atoms is used as a bond.

[0069] [Chemical formula 13]

[0070] In R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 or R 136 When having a substituent, the substituent is an alkyl group having 1 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl group having 6 to 13 carbon atoms.

[0071] <Example 2 of organic compound> One embodiment of the present invention is an organic compound represented by General Formula (G3).

[0072] [Chemical formula 14]

[0073] Note that in the general formula (G3), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 10 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0074] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0075] Here, in the above general formula (G3), R 6 To R 17 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0076] In the general formula (G3), by having a spirodi[fluorene]-4-amine skeleton in the molecular structure, the HOMO can be suppressed from being too high. Specifically, an organic compound having a HOMO energy level value lower than -5.4eV can be provided. By having a HOMO energy level value lower than -5.4eV, when the organic compound of the present invention is used in a layer adjacent to the light-emitting layer, the hole injectability of the light-emitting layer is improved, thereby providing a light-emitting device with a low driving voltage. In addition, when the organic compound of the present invention is used in a carrier transport layer between an active layer and an electrode of a light-receiving device, the dark current of the light-receiving device becomes smaller, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used in a hole transport layer common to a light-emitting device and a light-receiving device, a light-receiving device having both a low driving voltage and a light-receiving device with high sensitivity can be provided, so it is preferred.

[0077] Since the organic compound of the present invention has a spirobi[fluorene] skeleton, an organic compound having high heat resistance can be provided. A device using the organic compound of the present invention has excellent heat resistance and is therefore suitable for devices used at high temperatures, such as automotive devices.

[0078] <Example 3 of organic compound> One embodiment of the present invention is an organic compound represented by General Formula (G4).

[0079] [Chemical formula 15]

[0080] Note that in the general formula (G4), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0081] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0082] Here, in the above general formula (G4), R 1 , R 2 , R 6 To R 9 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0083] Note that in the general formula (G4), the naphthyl group has no substituent, so its terminal is a naphthyl group. Therefore, the sublimation property is improved, and it is easy to achieve high purity of the organic compound. In addition, since the steric hindrance is reduced and the orbit of HOMO is stabilized, a light-emitting device, a light-receiving device, and a light-receiving device with high reliability can be obtained. In addition, by bonding the ends of the n phenylene groups connected to each other with the naphthyl group, the structural change between the ground state and the excited state is reduced, the excited state is stable, the reliability of the organic compound represented by the general formula (G4) is improved, and a high carrier mobility can be achieved.

[0084] <Example 4 of organic compound> One embodiment of the present invention is an organic compound represented by General Formula (G5).

[0085] [Chemical formula 16]

[0086] Note that in the general formula (G5), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0087] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0088] Here, in the above general formula (G5), R 6 To R 17 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R135 and R 136 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0089] Note that in the general formula (G5), the naphthyl group has no substituent, so its terminal is a naphthyl group. Therefore, the sublimation of the organic compound is improved, and high purification is easily achieved. In addition, since the steric hindrance is reduced and the orbit of HOMO is stabilized, a light-emitting device, a light-receiving device, and a light-receiving device with high reliability can be obtained. In addition, by bonding the ends of the n phenylene groups connected to each other to the naphthyl group, the structural change between the ground state and the excited state is reduced, the excited state is stable, the reliability of the organic compound represented by the general formula (G5) is improved, and a high carrier mobility can be achieved.

[0090] In the general formula (G5), by having a spirodi[fluorene]-4-amine skeleton in the molecular structure, the HOMO energy level value can be suppressed from being too high. Specifically, an organic compound having a HOMO energy level value lower than -5.4eV can be provided. By having a HOMO energy level value lower than -5.4eV, when the organic compound of the present invention is used in a layer adjacent to the light-emitting layer, the hole injectability of the light-emitting layer is improved, thereby providing a light-emitting device with a low driving voltage. In addition, when the organic compound of the present invention is used in a carrier transport layer between an active layer and an electrode of a light-receiving device, the dark current of the light-receiving device becomes smaller, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used in a hole transport layer common to a light-emitting device and a light-receiving device, a light-receiving device having both a low driving voltage and a light-receiving device with high sensitivity can be provided, so it is preferred.

[0091] Since the organic compound of the present invention has a spirobi[fluorene] skeleton, an organic compound having high heat resistance can be provided. A device using the organic compound of the present invention has excellent heat resistance and is therefore suitable for devices used at high temperatures, such as automotive applications.

[0092] <Example 5 of Organic Compound> One embodiment of the present invention is an organic compound represented by General Formula (G6).

[0093] [Chemical formula 17]

[0094] Note that in the general formula (G6), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 and R 40 To R 43each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 34 , R 135 and R 136 represents hydrogen (including deuterium), n represents an integer from 1 to 4, and when n is 2 or more, a plurality of R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0095] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0096] Here, in the above general formula (G6), R 1 , R 2 , R 34 , R 40 To R 43 , R 135 and R 136 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0097] Note that in the general formula (G6), the benzene rings of the fluorenyl, dibenzofuranyl, dibenzothiophenyl, and naphthyl groups do not have substituents. By adopting this molecular structure, the hole transport property can be improved, so that a device with a low driving voltage can be provided. As a result, a low power consumption device can be provided. In addition, since the molecular structure is not too large, a material with high sublimation properties suitable for a vapor deposition process can be provided.

[0098] <Example 6 of Organic Compound> One embodiment of the present invention is an organic compound represented by General Formula (G7).

[0099] [Chemical formula 18]

[0100] Note that in the general formula (G7), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 40 To R 43 and R 103 To R 105each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 34 , R 135 and R 136 represents hydrogen (including deuterium), n represents an integer from 1 to 4, and when n is 2 or more, a plurality of R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0101] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0102] Here, in the above general formula (G7), R 6 To R 17 , R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0103] Note that in the general formula (G7), the benzene rings of the dibenzofuranyl, dibenzothiophene, and naphthyl groups do not have substituents. Thus, by adopting a molecular structure in which the skeleton at the end does not have a substituent, the hole transport property can be improved, thereby providing a device with a low driving voltage. As a result, a low power consumption device can be provided. In addition, since the molecular structure is not too large, a material with high sublimation properties suitable for a vapor deposition process can be provided.

[0104] <Example 7 of Organic Compound> One embodiment of the present invention is an organic compound represented by General Formula (G8).

[0105] [Chemical formula 19]

[0106] Note that in the general formula (G8), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 20 To R26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0107] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m The substituents represented by (m is an integer) are bonded to each other to form a ring.

[0108] Here, in the above general formula (G8), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0109] By having a fluorenyl-1-amine skeleton in the molecular structure, the HOMO can be suppressed from being too high. Specifically, an organic compound having a HOMO energy level value lower than -5.4eV can be provided. By having a HOMO energy level value lower than -5.4eV, when the organic compound of the present invention is used in a layer adjacent to a light-emitting layer, the hole injection property of the light-emitting layer is improved, thereby providing a light-emitting device with a low driving voltage. In addition, when the organic compound of the present invention is used in a carrier transport layer between an active layer and an electrode of a light-receiving device, the dark current of the light-receiving device becomes smaller, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used in a hole transport layer common to a light-emitting device and a light-receiving device, a light-receiving device having both a low driving voltage and a high sensitivity can be provided, so it is preferred. In addition, by bonding an amino group at the 1-position of fluorenyl, R 1 , R2 or both are close to the amino group. As a result, the change of the molecular structure between the excited state and the ground state can be suppressed. Therefore, the degradation of the organic compound itself can be suppressed, and when using such an organic compound, a highly reliable device can be realized.

[0110] <Example 8 of Organic Compounds> One embodiment of the present invention is an organic compound represented by General Formula (G9).

[0111] [Chemical formula 20]

[0112] Note that in the general formula (G9), X represents a sulfur atom or an oxygen atom, and R 6 To R 17 , R 20 To R 26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0113] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0114] Here, in the above general formula (G9), R 6 To R 17 , R 20 To R 26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0115] By having a spiro-linked [fluorene] -1-amine skeleton in the molecular structure, an organic compound with high heat resistance can be realized. In addition, the HOMO energy level value can be suppressed from being too high. Specifically, an organic compound having a HOMO energy level value lower than -5.4eV can be provided. Since the HOMO energy level value is lower than -5.4eV, when the organic compound of the present invention is used in a layer adjacent to the light-emitting layer, the hole injectability of the light-emitting layer is improved, thereby providing a light-emitting device with a low driving voltage. In addition, when the organic compound of the present invention is used in a carrier transport layer between an active layer and an electrode of a light-receiving device, the dark current of the light-receiving device becomes small, and a light-receiving device with high sensitivity can be provided. In addition, when the organic compound of the present invention is used in a hole transport layer common to a light-emitting device and a light-receiving device, a light-receiving device having both a low driving voltage and a light-receiving device with high sensitivity can be provided, so it is preferred.

[0116] <Example 9 of organic compound> One embodiment of the present invention is an organic compound represented by General Formula (G10).

[0117] [Chemical formula 21]

[0118] Note that in the general formula (G10), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 , R 6 To R 9 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0119] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0120] Here, in the above general formula (G10), R 1 , R 2, R 6 To R 9 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0121] Note that in the general formula (G10), the naphthyl group has no substituent, so its terminal is a naphthyl group. Therefore, the sublimation of the organic compound is improved, and it is easy to achieve high purification. In addition, since the steric hindrance is reduced and the orbit of HOMO is stabilized, a light-emitting device, a light-receiving device, and a light-receiving device with high reliability can be obtained. In addition, by bonding the ends of the n phenylene groups connected to each other with the naphthyl group, the structural change between the ground state and the excited state becomes smaller, so even if the excitons diffuse, the excited state of the organic compound of the present invention is stable, and the device reliability of the organic compound represented by the general formula (G10) is improved. In addition, a layer containing an organic compound represented by the general formula (G10) can achieve high carrier mobility, and a device containing an organic compound represented by the general formula (G10) can achieve low power consumption.

[0122] <Example 10 of organic compound> One embodiment of the present invention is an organic compound represented by General Formula (G11).

[0123] [Chemical formula 22]

[0124] Note that in the general formula (G11), X represents a sulfur atom or an oxygen atom, and R 1 , R 2 and R 40 To R 43 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0125] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0126] Here, in the above general formula (G11), R 1 , R 2 and R 40 To R 43 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0127] Note that in the general formula (G11), the benzene rings of the fluorenyl, dibenzofuranyl, dibenzothiophene, and naphthyl groups do not have substituents. By adopting this molecular structure, the hole transport property can be improved, so that a device with a low driving voltage can be provided. As a result, a low power consumption device can be provided. In addition, since the molecular structure is not too large, a material with high sublimation properties suitable for a vapor deposition process can be provided.

[0128] For example, in a light-emitting device, the organic compound of one embodiment of the present invention can be appropriately used in a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer or a cap layer. In particular, it can be appropriately used in a hole transport layer of a light-emitting device. In the case of being used in a hole transport layer, a light-receiving device can also be provided on the same plane as the light-emitting device, and the organic compound of the present invention can be appropriately used as a common transport layer between the light-emitting device and the light-receiving device.

[0129] In addition, in Embodiment 2, the structure in which the organic compound of one embodiment of the present invention is used for a light-emitting layer, a hole transport layer, an electron transport layer, or a cap layer of a light-emitting device or in a light-receiving device will be described in detail.

[0130] <Specific example> Next, specific examples of the organic compound according to one embodiment of the present invention having the structures represented by the above-mentioned general formula (G2) to general formula (G11) are shown below.

[0131] The organic compounds represented by the following structural formulae (100) to (248) are examples of organic compounds represented by the above-mentioned general formulae (G2) to (G11) in which X is substituted by oxygen.

[0132] [Chemical formula 23]

[0133] [Chemical formula 24]

[0134] [Chemical formula 25]

[0135] [Chemical formula 26]

[0136] [Chemical formula 27]

[0137] [Chemical formula 28]

[0138] [Chemical formula 29]

[0139] [Chemical formula 30]

[0140] [Chemical formula 31]

[0141] [Chemical formula 32]

[0142] [Chemical formula 33]

[0143] [Chemical formula 34]

[0144] The organic compounds represented by the following structural formula (300) to structural formula (449) are examples of organic compounds represented by the above-mentioned general formula (G2) to general formula (G11) in which X is substituted by sulfur.

[0145] [Chemical formula 35]

[0146] [Chemical formula 36]

[0147] [Chemical formula 37]

[0148] [Chemical formula 38]

[0149] [Chemical formula 39]

[0150] [Chemical formula 40]

[0151] [Chemical formula 41]

[0152] [Chemical formula 42]

[0153] [Chemical formula 43]

[0154] [Chemical formula 44]

[0155] [Chemical formula 45]

[0156] [Chemical formula 46]

[0157] The organic compounds represented by the above structural formulas (100) to (248) and the above structural formulas (300) to (449) are examples of organic compounds represented by the above general formulas (G2) to (G11), but the organic compounds of one embodiment of the present invention are not limited thereto.

[0158] <Method for synthesizing organic compounds> The synthesis method of the organic compound represented by the general formula (G2) or the general formula (G3) described in the above <Example 1 of Organic Compound> is described. Note that regarding the details of the general formula (G2) or the general formula (G3), R in the general formula m For all substituents and partial structures such as (m is an integer), reference can be made to the description of <Examples 1 of organic compounds>.

[0159] <<Synthesis Example 1 of an Organic Compound Represented by General Formula (G2)>> An example of synthesis of an organic compound represented by the following general formula (G2) is shown below.

[0160] [Chemical formula 47]

[0161] The general formula (G2) can be synthesized by the following synthesis scheme (s-1) and synthesis scheme (s-2).

[0162] That is, according to the synthesis scheme (s-1), the fluorenyl-4-amine compound (organic compound 1) and the naphthalene compound (organic compound 2) are cross-coupled to obtain the fluorenyl-4-amine compound (organic compound 3). Then, according to the synthesis scheme (s-2), the fluorenyl-4-amine compound (organic compound 3) and the dibenzofuran compound or dibenzothiophene compound (organic compound 4) are cross-coupled to obtain the target organic compound represented by the general formula (G2).

[0163] [Chemical formula 48]

[0164] [Chemical formula 49]

[0165] In the synthesis scheme (s-1) and the synthesis scheme (s-2), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 , R 136 , X and n are the same as above, so their description is omitted.

[0166] In addition, in the synthesis scheme (s-1) and the synthesis scheme (s-2), Q 1 and Q 2 Each independently represents chlorine, bromine, iodine or a triflate group.

[0167] When the Buchwald-Hartwig reaction using a palladium catalyst is carried out in Synthesis Scheme (s-1) and Synthesis Scheme (s-2), palladium compounds such as bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]dichloropalladium(II), tetrakis(triphenylphosphine)palladium(0) and allylpalladium(II) chloride dimer can be used as the palladium catalyst, and tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(o-tolyl)phosphine and (S)-(6,6'-dimethoxybiphenyl-2,2'-diyl)bis(diisopropylphosphine) (abbreviation: cBRIDP) can be used as the ligand of the palladium catalyst. In addition, in this reaction, as a base, an organic base such as sodium tert-butoxide, an inorganic base such as potassium carbonate, cesium carbonate or sodium carbonate, etc. can be used. In this reaction, as a solvent, toluene, xylene, benzene, tetrahydrofuran, dioxane, etc. can be used. Note that the reagents that can be used for the above reaction are not limited to the above reagents. In addition, a compound in which an organic tin group is bonded to the amine group of organic compound 1 can also be used instead of organic compound 1 or organic compound 3.

[0168] In the synthesis scheme (s-1) and the synthesis scheme (s-2), the Ullmann reaction using copper or a copper compound can also be performed. In this reaction, copper or a copper compound can be used. As the base used, inorganic bases such as potassium carbonate can be mentioned. As solvents that can be used for the reaction, 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone (DMPU), toluene, xylene and benzene can be mentioned. In the Ullmann reaction, the target product can be obtained in a short time with a high yield when the reaction temperature is above 100°C, so it is preferred to use DMPU and xylene with a high boiling point. In addition, the reaction temperature is more preferably a high temperature of more than 150°C, so it is more preferred to use DMPU. The reagents that can be used for the reaction are not limited to the above reagents.

[0169] <<Synthesis Example of Organic Compound 3>> The following is a synthesis example of the organic compound 3 which is different from the above.

[0170] [Synthesis Example 1 of Organic Compound 3] The synthesis of organic compound 3 can also be carried out by cross-coupling an aryl compound (organic compound 5) and an amine compound having a naphthalene skeleton (organic compound 6) as shown in the following synthesis scheme (s-3).

[0171] [Chemical formula 50]

[0172] In the synthesis scheme (s-3), R 1 To R 2 , R 6 To R 9 , R 20 To R 26 , R 40 To R 43 , R 103 To R 105 And n is the same as above, so their description is omitted.

[0173] In the synthetic scheme (s-3), Q 3 represents chlorine, bromine, iodine or triflate. In addition, the same reaction conditions as those of the synthesis schemes (s-1) and (s-2) can also be used in the synthesis scheme (s-3).

[0174] [Synthesis Example 2 of Organic Compound 3] The synthesis of organic compound 3 can also be carried out by cross-coupling an arylamine compound (organic compound 7) and a naphthyl boron compound or naphthyl boronic acid (organic compound 8) as shown in the following synthesis scheme (s-4-1). In addition, when n is 2 or more, a synthesis method in which multiple phenylene groups are cross-coupled with each other can also be used.

[0175] [Chemical formula 51]

[0176] In the synthesis scheme (s-4-1), R 1 To R 2 , R 6 To R 9 , R 20 To R 26 , R 40 To R 43 , R 103 To R 105 and n are the same as above, so their description is omitted. Note that in the synthesis scheme (s-4-1), R 150 To R 151 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, R 150 and R 151 They may be bonded to each other to form a ring, and examples of the boron compound in this case include pinacol borane compounds and the like.

[0177] In the synthesis scheme (s-4-1), Q 4 represents chlorine, bromine, iodine or a triflate group.

[0178] In the synthesis scheme (s-4-1), for example, palladium(II) acetate, tetrakis(triphenylphosphine)palladium(0) or bis(triphenylphosphine)palladium(II) dichloride or the like can be used for the palladium catalyst.

[0179] In addition, for example, tri(o-tolyl)phosphine, triphenylphosphine, tricyclohexylphosphine or the like can be used as a ligand of the palladium catalyst.

[0180] Furthermore, an organic base such as sodium tert-butoxide or the like, or an inorganic base such as potassium carbonate or sodium carbonate or the like can be used for the base.

[0181] In addition, a mixed solvent of toluene and water, a mixed solvent of xylene and water, a mixed solvent of benzene and water, a mixed solvent of ethers such as ethylene glycol dimethyl ether or 1,4-dioxane and water, etc. can be used as a reaction solvent. Boric acid or a boron compound has a high solubility in the aqueous phase, and the reaction speed becomes faster, and the effect of improving the yield can be expected, so it is preferred to add water. On the other hand, when ethers are used as solvents, it can be expected that a high yield can be obtained even without adding water.

[0182] In addition, a mixed solvent of alcohols such as toluene, water, and ethanol, a mixed solvent of alcohols such as xylene, water, and ethanol, a mixed solvent of alcohols such as benzene, water, and ethanol, etc. can be used as the reaction solvent. Particularly preferred are mixed solvents of toluene and water, mixed solvents of toluene, water, and ethanol, and mixed solvents of ethers such as ethylene glycol dimethyl ether and water.

[0183] [Synthesis Example 3 of Organic Compound 3] The synthesis of organic compound 3 shown in the above scheme (s-4-1) can also be carried out according to the following scheme (s-4-2). Specifically, organic compound 3 can also be obtained by cross-coupling an organic boron compound of an arylamine compound or a boronic acid of an arylamine compound (organic compound 9) and a halogenated naphthyl compound or a naphthyl trifluoromethanesulfonate (organic compound 10).

[0184] [Chemical formula 52]

[0185] In the synthesis scheme (s-4-2), R 1 To R 2 , R 6 To R 9 , R 20 To R 26 , R 40 To R 43 , R 103 To R 105 and n are the same as above, so their description is omitted. In addition, in the synthesis scheme (s-4-2), R 152 To R 153 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, R 152 and R 153 They may be bonded to each other to form a ring, and examples of the boron compound in this case include pinacol borane compounds and the like.

[0186] In the synthesis scheme (s-4-2), Q 5 represents chlorine, bromine, iodine or trifluoromethanesulfonate. Synthesis Scheme (s-4-2) can also use the same reaction conditions as Synthesis Scheme (s-4-1).

[0187] Alternatively, a cross-coupling reaction may be carried out between an organoaluminum compound, an organozirconium compound, an organozinc compound, an organotin compound or the like instead of an organoboron compound or boric acid and a compound having a halide or trifluoromethanesulfonate group.

[0188] <<Synthesis Example 2 of Organic Compound Represented by General Formula (G2)>> The synthesis of the general formula (G2) can also be carried out by the following synthesis scheme (s-5) and synthesis scheme (s-6).

[0189] That is, by cross-coupling the fluorenyl-4-amine compound (organic compound 1) and the dibenzofuran compound or the dibenzothiophene compound (organic compound 4) according to the synthesis scheme (s-5), a dibenzofuranylamine compound or a dibenzothiopheneamine compound (organic compound 11) can be obtained. Then, by cross-coupling the dibenzofuranylamine compound or the dibenzothiopheneamine compound (organic compound 11) and the naphthalene compound (organic compound 2) according to the synthesis scheme (s-6), the target organic compound represented by the general formula (G2) can be obtained.

[0190] [Chemical formula 53]

[0191] [Chemical formula 54]

[0192] In the synthesis scheme (s-5) and the synthesis scheme (s-6), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 103 To R 105 , R 135 , R 136 , X and n are the same as above, so their description is omitted.

[0193] In addition, in the synthesis schemes (s-5) and (s-6), Q 1 and Q 2 Each independently represents chlorine, bromine, iodine or a triflate group.

[0194] When the Buchwald-Hartwig reaction using a palladium catalyst or the Ullmann reaction using copper or copper oxide is carried out in Synthesis Scheme (s-5) and Synthesis Scheme (s-6), the same reaction conditions as those in Synthesis Scheme (s-1) and Synthesis Scheme (s-2) can be used.

[0195] <<Synthesis Example of Organic Compound 11>> The synthesis of the organic compound 11 can also be carried out by cross-coupling an aryl compound (organic compound 5) and a dibenzofuranylamine compound or a dibenzothienylamine compound (organic compound 12) as shown in the following synthesis scheme (s-7).

[0196] [Chemical formula 55]

[0197] In the synthetic scheme (s-7), R 1 , R 2 , R 6 To R 9 , R 30 To R 34 , R 103 To R 105 , R 135 , R 136 And X is the same as above, so the description thereof is omitted.

[0198] In the synthesis scheme (s-7), Q 3 represents chlorine, bromine, iodine or trifluoromethanesulfonate. Synthesis Scheme (s-7) can also be carried out under the same reaction conditions as Synthesis Scheme (s-1) and Synthesis Scheme (s-2).

[0199] <<Synthesis Example 3 of Organic Compound Represented by General Formula (G2)>> The synthesis of the organic compound represented by the general formula (G2) can also be carried out by the following synthesis schemes (s-8) and (s-9). That is, by cross-coupling a dibenzofuranylamine compound or a dibenzothienylamine compound (organic compound 12) and a naphthalene compound (organic compound 2) according to the synthesis scheme (s-8), a dibenzofuranylamine compound or a dibenzothienylamine compound (organic compound 13) can be obtained. Then, by cross-coupling a dibenzofuranylamine compound or a dibenzothienylamine compound (organic compound 13) and an aryl compound (organic compound 5) according to the synthesis scheme (s-9), the target compound represented by the general formula (G2) can be obtained.

[0200] [Chemical formula 56]

[0201] [Chemical formula 57]

[0202] In the synthesis scheme (s-8) and the synthesis scheme (s-9), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 103 To R 105 , R 135 , R 136 , X and n are the same as above, so their description is omitted.

[0203] In addition, in the synthesis schemes (s-8) and (s-9), Q1 and Q 3 Each independently represents chlorine, bromine, iodine or a triflate group.

[0204] When the Buchwald-Hartwig reaction using a palladium catalyst or the Ullmann reaction using copper or copper oxide is carried out in Synthesis Scheme (s-8) and Synthesis Scheme (s-9), the same reaction conditions as those in Synthesis Scheme (s-1) and Synthesis Scheme (s-2) can be used.

[0205] <<Synthesis Example of Organic Compound 13>> The following is a synthesis example of the organic compound 13 which is different from the above.

[0206] [Synthesis Example 1 of Organic Compound 13] The synthesis of the organic compound 13 can also be carried out by cross-coupling a dibenzofuran compound or a dibenzothiophene compound (organic compound 4) and an amine compound having a naphthalene skeleton (organic compound 6) as shown in the following synthesis scheme (s-10).

[0207] [Chemical formula 58]

[0208] In the synthetic scheme (s-10), R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 135 , R 136 , X and n are the same as above, so their description is omitted.

[0209] In the synthetic scheme (s-10), Q 2 represents chlorine, bromine, iodine or trifluoromethanesulfonate. Synthesis Scheme (s-10) can use the same reaction conditions as Synthesis Scheme (s-1) and Synthesis Scheme (s-2).

[0210] [Synthesis Example 2 of Organic Compound 13] In addition, when n≥1, the synthesis of organic compound 13 can also be carried out by cross-coupling a dibenzofuranylamine compound or a dibenzothienylamine compound (organic compound 14) and a naphthylboronic acid compound or a naphthylboronic acid (organic compound 8) as shown in the following synthesis scheme (s-11-1).

[0211] [Chemical formula 59]

[0212] In the synthesis scheme (s-11-1), R 20 To R26 , R 30 To R 34 , R 40 To R 43 , R 135 , R 136 , X and n are the same as above, so their description is omitted.

[0213] In the synthesis scheme (s-11-1), Q 6 represents chlorine, bromine, iodine or trifluoromethanesulfonate. Synthesis Scheme (s-11-1) can also be carried out under the same reaction conditions as Synthesis Scheme (s-4-1).

[0214] [Synthesis Example 3 of Organic Compound 13] The synthesis of organic compound 13 shown in the above scheme (s-11-1) can also be carried out according to the following scheme (s-11-2). That is, organic compound 13 can also be obtained by cross-coupling an organic boron compound of a dibenzofuranylamine compound or an organic boron compound of a dibenzothienylamine compound, a boronic acid of a dibenzofuranylamine compound or a boronic acid of a dibenzothienylamine compound (organic compound 15) and a halide of a naphthalene compound or a trifluoromethanesulfonate substituted naphthalene compound (organic compound 10).

[0215] [Chemical formula 60]

[0216] In the synthesis scheme (s-11-2), R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 135 , R 136 , X and n are the same as above, so their description is omitted. In addition, in the synthesis scheme (s-11-2), R 154 To R 155 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, R 154 and R 155 They may be bonded to each other to form a ring, and examples of the boron compound in this case include pinacol borane and the like.

[0217] In the synthesis scheme (s-11-2), Q 5 represents chlorine, bromine, iodine or trifluoromethanesulfonate. Synthesis Scheme (s-11-2) can also be carried out under the same reaction conditions as Synthesis Scheme (s-4-1).

[0218] Alternatively, a cross-coupling reaction using an organoaluminum, organozirconium, organozinc or organotin compound or the like may be used instead of an organoboron compound or boric acid.

[0219] <<Synthesis Example 4 of the Organic Compound Represented by General Formula (G2)>> When n≥1, the synthesis of the organic compound represented by the general formula (G2) can also be carried out by the following synthesis schemes (s-12-1) and schemes (s-12-2). In other words, by cross-coupling an arylamine compound (organic compound 16) and a naphthyl boron compound or naphthyl boronic acid (organic compound 8) according to the synthesis scheme (s-12-1), the target organic compound represented by the general formula (G2) can be obtained. In addition, by cross-coupling an organic boron compound of an arylamine compound or a boronic acid of an arylamine compound (organic compound 17) and a halide or trifluoromethanesulfonate substituent of a naphthalene compound (organic compound 10) according to the synthesis scheme (s-12-2), the target organic compound represented by the general formula (G2) can be obtained.

[0220] [Chemical formula 61]

[0221] [Chemical formula 62]

[0222] In the synthesis scheme (s-12-1) and the synthesis scheme (s-12-2), R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 103 To R 105 , R 135 , R 136 , R 150 To R 151 , X and n are the same as above, so their description is omitted. In addition, in the synthesis scheme (s-12-2), R 156 To R 157 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, R 156 and R 157 They may be bonded to each other to form a ring, and examples of the boron compound in this case include pinacol borane compounds and the like.

[0223] In the synthesis scheme (s-12-1) and the synthesis scheme (s-12-2), Q 5 and Q 7represents chlorine, bromine, iodine or trifluoromethanesulfonate. The same reaction conditions as those of the synthesis scheme (s-4-1) can also be used in the synthesis scheme (s-12-1) and the synthesis scheme (s-12-2).

[0224] Alternatively, a cross-coupling reaction using an organoaluminum, organozirconium, organozinc or organotin compound or the like may be used instead of an organoboron compound or boric acid.

[0225] <<Synthesis Example 1 of an Organic Compound Represented by General Formula (G3)>> An example of synthesis of an organic compound represented by the following general formula (G3) is shown below.

[0226] [Chemical formula 63]

[0227] The synthesis of the general formula (G3) can be carried out using the following synthesis scheme (s-13) and synthesis scheme (s-14).

[0228] [Chemical formula 64]

[0229] [Chemical formula 65]

[0230] In the synthesis scheme (s-13) and the synthesis scheme (s-14), R 6 To R 17 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 , Q 1 , Q 2 , X and n are the same as above, so their description is omitted.

[0231] In Synthesis Scheme (s-13) and Synthesis Scheme (s-15), the same reaction conditions as those in Synthesis Scheme (s-1) and Synthesis Scheme (s-2) can be used.

[0232] <<Synthesis Example of Organic Compound 19>> The following is a synthesis example of the organic compound 19 which is different from the above.

[0233] [Synthesis Example 1 of Organic Compound 19] The synthesis of organic compound 19 can be carried out using the following synthesis scheme (s-15).

[0234] [Chemical formula 66]

[0235] [Synthesis Example 2 of Organic Compound 19] The synthesis of organic compound 19 can be carried out using the following synthesis scheme (s-16-1).

[0236] [Chemical formula 67]

[0237] [Synthesis Example 3 of Organic Compound 19] The synthesis of organic compound 19 can be carried out using the following synthesis scheme (s-16-2).

[0238] [Chemical formula 68]

[0239] <<Synthesis Example 2 of an Organic Compound Represented by General Formula (G3)>> The synthesis of the organic compound represented by the general formula (G3) can also be carried out by the following synthesis scheme (s-17) and scheme (s-18).

[0240] [Chemical formula 69]

[0241] [Chemical formula 70]

[0242] <<Synthesis Example of Organic Compound 22>> The following is a synthesis example of the organic compound 22 which is different from the above.

[0243] [Synthesis Example 1 of Organic Compound 22] The synthesis of organic compound 22 can be carried out using the following synthesis scheme (s-19).

[0244] [Chemical formula 71]

[0245] <<Synthesis Example 3 of Organic Compound Represented by General Formula (G3)>> The synthesis of the organic compound represented by the general formula (G3) can be carried out using the following synthesis scheme (s-20).

[0246] [Chemical formula 72]

[0247] <<Synthesis Example 4 of the Organic Compound Represented by General Formula (G3)>> The synthesis of the organic compound represented by the general formula (G3) can be carried out using the following synthesis scheme (s-21-1).

[0248] [Chemical formula 73]

[0249] <<Synthesis Example 5 of the Organic Compound Represented by General Formula (G3)>> The synthesis of the organic compound represented by the general formula (G3) can be carried out using the following synthesis scheme (s-21-2).

[0250] [Chemical formula 74]

[0251] In the synthetic schemes (s-13) to (s-15), the synthetic schemes (s-16-1) to (s-16-2), the synthetic schemes (s-17) to (s-19), the synthetic schemes (s-20), and the synthetic schemes (s-21-1) to (s-21-2), R 6 To R 17 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 , Q 1 To Q 2 , Q 5 , X and n are the same as above, so their description is omitted. In addition, in the synthesis scheme (s-16-2) and the synthesis scheme (s-21-2), R 158 To R 159 and R 160 To R 161 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 6 carbon atoms, R 156 With R 157 and R 160 With R 161 They may be bonded to each other to form a ring, and examples of the boron compound in this case include pinacol borane compounds and the like.

[0252] In the synthesis scheme (s-15), the synthesis scheme (s-16-1), the synthesis scheme (s-19), the synthesis scheme (s-20) and the synthesis scheme (s-21-1), Q 8 , Q9 and Q 10 represents chlorine, bromine, iodine or a triflate group.

[0253] Alternatively, a coupling reaction using an organoaluminum compound, an organozirconium compound, an organozinc compound, an organotin compound or the like may be used instead of an organoboron compound or a boronic acid compound.

[0254] In Synthesis Scheme (s-13) to Synthesis Scheme (s-15), Synthesis Scheme (s-16-1), Synthesis Scheme (s-16-2), Synthesis Scheme (s-17) to Synthesis Scheme (s-20), Synthesis Scheme (s-21-1) and Synthesis Scheme (s-21-2), the same reaction conditions as in Synthesis Scheme (s-1) to Synthesis Scheme (s-3), Synthesis Scheme (s-4-1) to Synthesis Scheme (s-4-2), Synthesis Scheme (s-5) to Synthesis Scheme (s-7), Synthesis Scheme (s-8) to Synthesis Scheme (s-10), Synthesis Scheme (s-11-1) to Synthesis Scheme (s-11-2) and Synthesis Scheme (s-12-1) to Synthesis Scheme (s-12-2) can be used.

[0255] Note that the synthesis method of the organic compound represented by the general formula (G3) is not limited to the above-mentioned synthesis schemes (s-13) to (s-15), (s-16-1), (s-16-2), (s-17) to (s-19), (s-20) and (s-21-1), (s-21-2).

[0256] The above is an explanation of the synthesis method of the general formula (G3). The synthesis method of the general formula (G3) is not limited to this, and any reaction or reagent other than the above can be used.

[0257] <<Specific examples of intermediates>> Specific examples of intermediates produced in the synthesis examples of the organic compound represented by the above general formula (G2) are shown below.

[0258] [Specific examples of organic compound 3 and organic compound 19] Next, specific examples of organic compounds that can be used as the organic compound 19 are shown below.

[0259] [Chemical formula 75]

[0260] [Chemical formula 76]

[0261] [Specific examples of organic compound 11 and organic compound 22] Next, specific examples of organic compounds that can be used as the organic compound 11 and the organic compound 22 are shown below.

[0262] [Chemical formula 77]

[0263] [Chemical formula 78]

[0264] [Chemical formula 79]

[0265] [Chemical formula 80]

[0266] [Specific examples of organic compound 13] Next, specific examples of organic compounds that can be used as the organic compound 13 are shown below.

[0267] [Chemical formula 81]

[0268] [Chemical formula 82]

[0269] [Chemical formula 83]

[0270] [Chemical formula 84]

[0271] [Chemical formula 85]

[0272] [Chemical formula 86]

[0273] Note that the synthesis method of the organic compound represented by the general formula (G2) is not limited to the above-mentioned synthesis schemes (s-1) to (s-3), synthesis schemes (s-4-1) to (s-4-2), synthesis schemes (s-5) to (s-7), synthesis schemes (s-8) to (s-10), synthesis schemes (s-11-1) to (s-11-2), and synthesis schemes (s-12-1) to (s-12-2).

[0274] The above is an explanation of the synthesis method of the general formula (G2). The synthesis method of the general formula (G2) is not limited to this, and any reaction or reagent other than the above can be used.

[0275] Implementation Method 2 In this embodiment, refer to Figures 1A to 1E Another structure of a light-emitting device using the organic compound described in Embodiment 1 is described.

[0276] <<Basic structure of light emitting device>> The basic structure of a light emitting device is described. Figure 1A The light-emitting device has a structure (single-layer structure) including an organic compound (EL) layer having a light-emitting layer between a pair of electrodes. Specifically, the organic compound layer 103 is included between the first electrode 101 and the second electrode 102.

[0277] Figure 1B It is shown that a pair of electrodes includes multiple (in Figure 1B A light-emitting device having a stacked structure (tandem structure) including organic compound layers (103a, 103b) as EL layers (two layers in the example) and a charge generation layer 106 between the organic compound layers 103a and 103b. A light-emitting device having a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0278] The charge generation layer 106 has a function of injecting electrons into one organic compound layer (one of the organic compound layer 103a and the organic compound layer 103b) and injecting holes into the other organic compound layer (the other of the organic compound layer 103b and the organic compound layer 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Figure 1B In the embodiment, when a voltage is applied so that the potential of the first electrode 101 is higher than that of the second electrode 102, the charge generation layer 106 injects electrons into the organic compound layer 103a and injects holes into the organic compound layer 103b.

[0279] In terms of light extraction efficiency, the charge generation layer 106 preferably has a light transmittance to visible light (specifically, the charge generation layer 106 has a visible light transmittance of 40% or more). The charge generation layer 106 can function even if its conductivity is lower than that of the first electrode 101 and the second electrode 102 .

[0280] Figure 1CThe stacked structure of the organic compound layer 103 of the light-emitting device of one embodiment of the present invention is shown. Note that in this case, the first electrode 101 is used as an anode and the second electrode 102 is used as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are stacked in sequence on the first electrode 101. Note that the light-emitting layer 113 can also be a stack of multiple light-emitting layers with different luminescent colors. For example, a light-emitting layer containing a light-emitting substance that emits red light, a light-emitting layer containing a light-emitting substance that emits green light, and a light-emitting layer containing a light-emitting substance that emits blue light can be stacked with or without a layer containing a carrier transport material. Alternatively, a light-emitting layer containing a light-emitting substance that emits yellow light and a light-emitting layer containing a light-emitting substance that emits blue light can also be combined. Note that the stacked structure of the light-emitting layer 113 is not limited to the above structure. For example, the light-emitting layer 113 can also be a stack of multiple light-emitting layers with the same luminescent color. For example, a first light-emitting layer containing a light-emitting substance that emits blue light and a second light-emitting layer containing a light-emitting substance that emits blue light may be stacked with or without a layer containing a carrier transporting material. When multiple light-emitting layers having the same light-emitting color are stacked, reliability may be improved compared to a single layer. Figure 1B When the tandem structure shown includes a plurality of EL layers, the EL layers are stacked in order from the anode side as described above. In addition, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the organic compound layer 103 is reversed. Specifically, 111 on the first electrode 101 of the cathode is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0281] The light-emitting layer 113 in the organic compound layer (103, 103a, and 103b) as the EL layer can obtain fluorescent light or phosphorescent light with a desired light color by appropriately combining a light-emitting substance and a plurality of substances. In addition, the light-emitting layer 113 may also have a stacked structure with different light-emitting colors. In this case, different materials may be used as the light-emitting substance and other substances for each stacked light-emitting layer. In addition, it is also possible to use Figure 1B The plurality of organic compound layers (103a and 103b) shown have a structure in which different luminescent colors are obtained. In this case, different materials may be used as the luminescent substance and other substances used in the respective luminescent layers.

[0282] In addition, in a light-emitting device according to one embodiment of the present invention, for example, Figure 1CThe first electrode 101 shown is a reflective electrode, the second electrode 102 is a semi-transmissive-semi-reflective electrode, and an optical microcavity resonator (microcavity) structure is adopted, so that the light obtained from the light-emitting layer 113 in the organic compound layer 103 can resonate between the above electrodes, thereby enhancing the light emitted from the second electrode 102. As a result, high definition can be easily achieved. In addition, since the light emission intensity in the front direction of a specific wavelength can be enhanced, low power consumption can be achieved.

[0283] In the case where the first electrode 101 of the light-emitting device is a reflective electrode composed of a laminated structure of a reflective conductive material and a light-transmitting conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferably adjusted in the following manner: when the wavelength of light obtained from the light-emitting layer 113 is λ, the optical distance (the product of the film thickness and the refractive index) between the first electrode 101 and the second electrode 102 is mλ / 2 (note that m is an integer greater than 1) or a value close thereto.

[0284] In order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light can be obtained to (2m'+1)λ / 4 (note that m' is an integer greater than 1) or a value in the vicinity thereof. Note that the "light-emitting region" described here refers to the region where holes and electrons in the light-emitting layer 113 recombine.

[0285] By performing the above optical adjustment, the spectrum of specific monochromatic light that can be obtained from the light-emitting layer 113 can be narrowed, thereby obtaining light emission with good color purity.

[0286] In addition, in the above case, strictly speaking, the optical distance between the first electrode 101 and the second electrode 102 can be said to be the total thickness from the reflective region in the first electrode 101 to the reflective region in the second electrode 102. However, since it is difficult to accurately determine the positions of the reflective regions in the first electrode 101 and the second electrode 102, the above effect can be fully obtained by assuming that any position in the first electrode 101 and the second electrode 102 is a reflective region. In addition, strictly speaking, the optical distance between the first electrode 101 and the light-emitting layer that can obtain the desired light can be said to be the optical distance between the reflective region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light. However, since it is difficult to accurately determine the positions of the reflective region in the first electrode 101 and the light-emitting region in the light-emitting layer that can obtain the desired light, the above effect can be fully obtained by assuming that any position in the first electrode 101 is a reflective region and any position in the light-emitting layer that can obtain the desired light is a light-emitting region.

[0287] Figure 1D The light emitting device shown is a light emitting device having a series structure. By adopting the series structure, a light emitting device capable of emitting light with high brightness can be obtained. In addition, the series structure can reduce the current required to obtain the same brightness compared to a single structure, so the reliability can be improved. In addition, power consumption can be reduced.

[0288] Figure 1E The light emitting device shown is Figure 1B An example of a light-emitting device with a tandem structure shown in the figure has a structure in which three organic compound layers (103a, 103b, 103c) are stacked with charge generation layers (106a, 106b) sandwiched therebetween. The three organic compound layers (103a, 103b, 103c) respectively include light-emitting layers (113a, 113b, 113c), and the light-emitting colors of each light-emitting layer can be freely combined. For example, the light-emitting layer 113a and the light-emitting layer 113c can present blue, and the light-emitting layer 113b can present any one of red, green, and yellow. In addition, the light-emitting layer 113a and the light-emitting layer 113c can present red, and the light-emitting layer 113b can present any one of blue, green, and yellow.

[0289] In addition, in the light-emitting device of one embodiment of the present invention, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (transparent electrode, semi-transmitting-semi-reflecting electrode, etc.). In the case where the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. In addition, in the case where the electrode is a semi-transmitting-semi-reflecting electrode, the visible light reflectance of the semi-transmitting-semi-reflecting electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. In addition, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less.

[0290] In the light-emitting device of one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the reflective electrode has a visible light reflectivity of 40% to 100%, preferably 70% to 100%. In addition, the resistivity of the electrode is preferably 1×10 -2 Ωcm or less.

[0291] <<Specific structure of the light emitting device>> Next, the specific structure of the light emitting device of one embodiment of the present invention is described. Figure 1D Note: Figure 1A and Figure 1C The light emitting device having a single structure shown also has the same structure of the EL layer. Figure 1D In the case where the light-emitting device shown has a microcavity structure, a reflective electrode is formed as the first electrode 101, and a semi-transmissive-semi-reflective electrode is formed as the second electrode 102. Thus, the electrodes can be formed using a desired electrode material alone or using a plurality of electrode materials in a single layer or a stacked layer. In addition, the second electrode 102 is formed by appropriately selecting a material after forming the organic compound layer 103b.

[0292] <First Electrode and Second Electrode> As the material forming the first electrode 101 and the second electrode 102, if the functions of the above two electrodes can be satisfied, the following materials can be appropriately combined. For example, metals, alloys, conductive compounds and mixtures thereof can be appropriately used. Specifically, In-Sn oxide (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide, In-W-Zn oxide can be cited. In addition to the above, aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd) and other metals and alloys appropriately combined therewith can also be cited. In addition to the above, elements belonging to Group 1 or Group 2 of the periodic table (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), alloys appropriately combined therefrom, and graphene, etc. can be used.

[0293] exist Figure 1D In the light-emitting device shown, when the first electrode 101 is an anode, the hole injection layer 111a and the hole transport layer 112a of the organic compound layer 103a are sequentially stacked on the first electrode 101 by vacuum evaporation. After the organic compound layer 103a and the charge generation layer 106 are formed, the hole injection layer 111b and the hole transport layer 112b of the organic compound layer 103b are sequentially stacked on the charge generation layer 106 in the same manner as described above.

[0294] <Hole Injection Layer> The hole injection layer (111, 111a, 111b) is a layer for injecting holes from the first electrode 101 of the anode and the charge generation layer (106, 106a, 106b) into the organic compound layer (103, 103a, 103b), and contains an organic acceptor material and a material with high hole injection properties.

[0295] The organic acceptor material can generate holes in the organic compound by charge separation with other organic compounds whose LUMO energy level is close to the HOMO energy level.

[0296] Note that the values ​​of the HOMO level and the LUMO level used in this specification can be calculated by electrochemical measurement. Typical examples of electrochemical measurement include cyclic voltammetry (CV) measurement and differential pulse voltammetry (DPV) measurement.

[0297] In cyclic voltammetry (CV) measurements, the oxidation peak potential (E pa ) and reduction peak potential (E pc ) to calculate the HOMO energy level and the LUMO energy level (E). In the measurement, the HOMO energy level is calculated from the potential scan in the positive direction, and the LUMO energy level is calculated from the potential scan in the negative direction. In addition, the scanning speed in the measurement is 0.1 V / s.

[0298] The specific calculation method of HOMO energy level and LUMO energy level is described. pa ) and reduction peak potential (E pc ) to calculate the standard redox potential (E o )(=(E pa +E pc ) / 2), from the potential energy of the reference electrode relative to the vacuum level (E x ) minus the standard redox potential (E o ), from which the HOMO energy level and LUMO energy level values ​​(E) can be calculated respectively (=E x -E o ).

[0299] Note that the above shows the case where a reversible redox wave is obtained. In the case where an irreversible redox wave is obtained, the oxidation peak potential (E pa ) minus a certain value (0.1 eV) is assumed to be the reduction peak potential (E pc ), calculate the standard redox potential (E o ), and the HOMO energy level is calculated. pc ) plus a certain value (0.1 eV) is assumed to be the oxidation peak potential (E pa ), calculate the standard redox potential (E o ), and the LUMO level is calculated from this.

[0300] As organic acceptor materials, compounds having electron-withdrawing groups (halogen or cyano groups) such as quinodimethane derivatives, tetrachlorobenzoquinone derivatives, and hexaazatriphenylene derivatives can be used. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F) can be used. 4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. Among organic acceptor materials, compounds such as HAT-CN, in which electron-withdrawing groups are bonded to condensed aromatic rings having multiple heteroatoms, have high acceptor properties and thermal stability in film quality, and are therefore particularly preferred. In addition, [3] ylidene derivatives including electron-withdrawing groups (especially halogen groups such as fluorine groups or cyano groups) are preferred because of their very high electron-accepting properties. Specifically, the following can be used: α, α', α"-1,2,3-cyclopropane trimethylene tris[4-cyano-2,3,5,6-tetrafluorophenylacetonitrile], α, α', α"-1,2,3-cyclopropane trimethylene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α, α', α"-1,2,3-cyclopropane trimethylene tris[2,3,4,5,6-pentafluorophenylacetonitrile], etc.

[0301] As materials with high hole injection properties, oxides of metals belonging to Groups 4 to 8 in the periodic table (transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide, etc.) can be used. Specifically, molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide can be cited. Among them, molybdenum oxide is particularly stable in the atmosphere, has low hygroscopicity, and is easy to handle, so it is preferred. In addition to the above, phthalocyanine compounds such as phthalocyanine (abbreviated as: H 2 Pc) or copper phthalocyanine (CuPc), etc.

[0302] In addition to the above materials, the following low molecular weight aromatic amine compounds can be used, such as 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviated as TDATA), 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviated as MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl benzene (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), etc.

[0303] In addition, a polymer compound (oligomer, dendrimer or polymer, etc.) can be used, such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD), etc. Alternatively, a polymer compound to which an acid is added, such as poly(3,4-ethylenedioxythiophene) / (polystyrene sulfonic acid) (abbreviated as PEDOT / PSS), polyaniline / (polystyrene sulfonic acid) (abbreviated as PAni / PSS), etc. can also be used.

[0304] As a material with high hole injection property, a mixed material containing a hole transport material and the above-mentioned organic acceptor material (electron acceptor material) can also be used. In this case, the organic acceptor material extracts electrons from the hole transport material to generate holes in the hole injection layer 111, and the holes are injected into the light-emitting layer 113 through the hole transport layer 112. In addition, the hole injection layer 111 can be a single layer composed of a mixed material containing a hole transport material and an organic acceptor material (electron acceptor material), or a stack of layers formed using a hole transport material and an organic acceptor material (electron acceptor material) respectively.

[0305] As a hole transport material, it is preferable to use a hole transport material having a hole mobility of 1×10 -6 cm2 / Vs or more. In addition, any substance other than the above may be used as long as it has a higher hole-transporting property than an electron-transporting property.

[0306] For example, as a material having a hole transport property, an organic compound represented by the following general formula (G1) can be used.

[0307] [Chemical formula 87]

[0308] Note that in the general formula (G1), X represents a sulfur atom or an oxygen atom, and R 1 To R 9 , R 20 To R 26 , R 30 To R 36 and R 40 To R 43 R each independently represents hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and n represents an integer from 1 to 4. When n is 2 or more, multiple R 40 They may be the same or different from each other, and multiple R 41 To R 43 The same is true.

[0309] In R m When the substituent represented by (m is an integer) has a substituent, the substituent and R do not form m (m is an integer) is a ring formed by bonding substituents represented by each other.

[0310] Here, in the above general formula (G1), R 1 To R 9 , R 20 To R 26 , R 30 To R 36 and R 40 To R 43 Please refer to <Example 1 of Organic Compounds> m (m is an integer).

[0311] In addition, as the material having a hole transport property, the organic compounds represented by the general formula (G2) to the general formula (G11) according to one embodiment of the present invention can be used.

[0312] As hole transport materials, preferably used are materials with high hole transport properties, such as compounds having π-electron-rich heteroaromatic rings (e.g., carbazole derivatives, furan derivatives, or thiophene derivatives) and aromatic amines (organic compounds containing aromatic amine skeletons). The compounds of Embodiment 1 are used as hole transport materials because they have hole transport properties.

[0313] Examples of the carbazole derivative (organic compound having a carbazole ring) include bicarbazole derivatives (eg, 3,3′-bicarbazole derivatives) and aromatic amines having a carbazole group.

[0314] As the above-mentioned bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives), specifically, there can be mentioned 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviated as: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: βNCCP), etc.

[0315] In addition, as the aromatic amine having the above-mentioned carbazole group, specifically, 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-bis(9,9-dimethyl-9H-fluorene-2-yl)amine (abbreviation: PCBiF), PCBFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluorene-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-(9,9-diphenyl-9H-fluorene-2-yl)-9,9-diphenyl-9H-fluorene-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluorene-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluorene -4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi(9H-fluorene)-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi(9H-fluorene)-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1"-terphenyl-4-yl)-9,9-dimethylbenzene-9H-fluorene-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1"-terphenyl-4-yl)- 9,9-Dimethylbenzene-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1"-terphenyl-4-yl)-9,9-dimethylbenzene-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1"-terphenyl-4-yl)-9,9-dimethylbenzene-9H-fluoren-4-amine, 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazole-3-yl)amine (abbreviated as: PCA1BP), N,N'-bis(9-phenylcarbazole-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviated as: PCA2B), N,N',N"-triphenyl-N,N',N"-tri(9-phenylcarbazole-3-yl)benzene-1,3,5-triamine (abbreviated as: PCA3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)- )phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCA3), CN1), 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzDP A1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzDP A2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviated as PCzTPN2), N-(9,9-spirobi[9H-fluorene]-2-yl)-N,9-diphenylcarbazole-3-amine (abbreviated as PCASF), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4 -phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4',4"-tri(carbazol-9-yl)triphenylamine (abbreviation: TCTA), N-(9,9-diphenyl-9H-fluorene-2-yl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: PCAFLP(2)), N-(9,9-diphenyl-9H-fluorene-2-yl)-N,9-diphenyl-9H-carbazole-2-amine (abbreviation: PCAFLP(2)-02), etc.

[0316] Note that as carbazole derivatives, in addition to the above, 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), etc. can also be mentioned.

[0317] Specific examples of the above-mentioned furan derivatives (organic compounds having a furan ring) include 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0318] Specific examples of the above-mentioned thiophene derivatives (organic compounds having a thiophene ring) include 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), which are organic compounds having a thiophene ring.

[0319] Specific examples of the aromatic amines include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), N-(9,9-dimethyl-9H-fluorene-2-yl)-N -{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9'-spirobi[9H-fluoren]-2-yl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluoren]-2,7-diamine (abbreviation: DPA2SF), 4,4',4"-tri[N-(1-naphthyl)-N-phenylamino]tri Aniline (abbreviation: 1'-TNATA), 4,4',4"-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4"-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho [1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4"-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d] furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-benzidine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4"-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4"-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4"-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl- 4"-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBAαNβNB-03), 4,4'-diphenyl-4"-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviated as: BBAPβNB-03), 4,4'-diphenyl-4"-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBA(βN2)B), 4,4'-diphenyl-4"-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviated as: BBA(βN2)B-03), 4,4'-diphenyl-4"-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviated as: BBAβNαNB), 4,4'-diphenyl-4"-(5;2'-binaphthyl-1-yl)triphenylamine amine (abbreviated as: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviated as: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: mTPBiAβNBi), 4-(4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviated as: αNBB1BP), 4,4'-diphenyl-4"-[4'-(carbazol-9-yl)biphenyl triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tri(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfB NBN), 4-phenyl-4'-[4-(9-phenylfluorene-9-yl)phenyl]triphenylamine (abbreviated as: BPAFLBi), N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-3-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-2-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-1-amine, etc. ,

[0320] In addition, as hole transport materials, polymer compounds (oligomers, dendrimers, polymers, etc.) can be used, such as poly (N-vinyl carbazole) (abbreviated as: PVK), poly (4-vinyl triphenylamine) (abbreviated as: PVTPA), poly [N- (4-{N'-[4-(4-diphenylamino) phenyl] phenyl-N'-phenylamino} phenyl) methacrylamide] (abbreviated as: PTPDMA), poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) benzidine] (abbreviated as: Poly-TPD), etc. Alternatively, polymer compounds to which an acid is added, such as poly (3, 4-ethylenedioxythiophene) / (polystyrene sulfonic acid) (abbreviated as: PEDOT / PSS) or polyaniline / (polystyrene sulfonic acid) (abbreviated as: PAni / PSS), etc. can also be used.

[0321] Note that the hole-transporting material is not limited to the above materials, and a combination of one or more known various materials can be used as the hole-transporting material.

[0322] Note that the hole injection layer (111, 111a, 111b) can be formed by various known film-forming methods, for example, by vacuum evaporation.

[0323] <Hole Transport Layer> The hole transport layer (112, 112a, 112b) is a layer that transports holes injected from the hole injection layer (111, 111a, 111b) from the first electrode 101 to the light-emitting layer (113, 113a, 113b). In addition, the hole transport layer (112, 112a, 112b) is a layer containing a hole transport material. Therefore, as the hole transport layer (112, 112a, 112b), a hole transport material that can be used for the hole injection layer (111, 111a, 111b) can be used.

[0324] Note that in a light-emitting device of one embodiment of the present invention, the same organic compound as that of the hole transport layer (112, 112a, 112b) can be used for the light-emitting layer (113, 113a, 113b). When the same organic compound is used for the hole transport layer (112, 112a, 112b) and the light-emitting layer (113, 113a, 113b), holes can be efficiently transported from the hole transport layer (112, 112a, 112b) to the light-emitting layer (113, 113a, 113b), which is preferred.

[0325] <Luminous Layer> The light-emitting layer (113, 113a, 113b) is a layer containing a light-emitting substance. For the light-emitting substance that can be used for the light-emitting layer (113, 113a, 113b), substances that emit light in blue, purple, blue-purple, green, yellow-green, yellow, orange, red, etc. can be appropriately used. In addition, when a plurality of light-emitting layers are included, by using different light-emitting substances in each light-emitting layer, a structure that emits different light colors can be obtained (for example, light-emitting colors in a complementary color relationship can be combined to obtain white light). Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances can also be used.

[0326] In addition, the light-emitting layer (113, 113a, 113b) may contain one or more organic compounds (host material, etc.) in addition to the light-emitting substance (guest material).

[0327] Note that when multiple host materials are used in the light-emitting layer (113, 113a, 113b), as the newly added second host material, it is preferred to use a substance having an energy gap larger than the energy gaps of the existing guest material and the first host material. In addition, it is preferred that the lowest singlet excitation energy level (S1 energy level) of the second host material is higher than the S1 energy level of the first host material, and the lowest triplet excitation energy level (T1 energy level) of the second host material is higher than the T1 energy level of the guest material. In addition, it is preferred that the lowest triplet excitation energy level (T1 energy level) of the second host material is higher than the T1 energy level of the first host material. By adopting the above structure, an excimer complex can be formed by two host materials. Note that in order to efficiently form an excimer complex, it is particularly preferred to combine a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material). In addition, by adopting the above structure, high efficiency, low voltage and long life can be achieved at the same time.

[0328] Note that as an organic compound used as the above-mentioned host material (including the first host material and the second host material), as long as the conditions of the host material for the light-emitting layer are met, an organic compound such as a hole transport material that can be used for the above-mentioned hole transport layer (112, 112a, 112b) or an electron transport material that can be used for the electron transport layer (114, 114a, 114b) described later can be used, and an exciplex formed by a plurality of organic compounds (the above-mentioned first host material and the second host material) can also be used. In addition, an exciplex formed by a plurality of organic compounds in an excited state has the function of a TADF material that can convert triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small. As a combination of a plurality of organic compounds that form an exciplex, for example, it is preferred that one has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. In addition, as one of the combinations forming an exciplex, a phosphorescent luminescent substance such as an iridium, rhodium or platinum organic metal complex or a metal complex can also be used. The organic compound described in Embodiment 1 has an electron-transporting property and can be effectively used as a first host material. Also, the organic compound has a hole-transporting property and can be used as a second host material.

[0329] There is no particular limitation on the luminescent material that can be used in the luminescent layer (113, 113a, 113b), and a luminescent material that converts singlet excitation energy into light in the visible light region or a luminescent material that converts triplet excitation energy into light in the visible light region can be used.

[0330] <<Luminescent material that converts singlet excitation energy into luminescence>> As the luminescent material that can be used for the luminescent layer (113, 113a, 113b) and converts the singlet excitation energy into luminescence, the following fluorescent emitting materials (fluorescent luminescent materials) can be cited. For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc. can be cited. In particular, pyrene derivatives are preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N,N' -diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc.

[0331] In addition, 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: Y GA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthracenyl)triphenylamine (abbreviated as: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: PCAPA), 4-(10-phenyl triphenylamine (abbreviated as: PCBAPA), 4-[4-(10-phenyl-9-anthracenyl)phenyl]-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as: PCBAPBA), perylene, 2,5,8,11-tetra-(tert-butyl) perylene (abbreviated as: TBP), N,N"-(2-tert-butylanthracene-9,10-diyldiphenylamine -4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviated as: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviated as: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as: 2DPAPPA), etc.

[0332] In addition, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N, 9-Triphenylanthracen-9-amine (abbreviated as DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviated as DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenylnaphthacene (abbreviated as BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)malononitrile (abbreviated as DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCM2), N,N,N',N'-tetra(4 -methylphenyl) tetracene-5,11-diamine (abbreviated as p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviated as p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as DCJTI), yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malononitrile (abbreviated as: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as: BisDCJTM), 1,6BnfAPrn-03, N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used. ;

[0333] <<Luminescent material that converts triplet excitation energy into luminescence>> Next, examples of a light-emitting substance that converts triplet excitation energy into light emission and can be used for the light-emitting layer 113 include a substance that emits phosphorescence (phosphorescent substance) and a thermally activated delayed fluorescence (TADF) material that exhibits thermally activated delayed fluorescence.

[0334] Phosphorescent materials refer to compounds that exhibit phosphorescence but no fluorescence at any temperature in the temperature range (i.e., 77K or more and 313K or less) above low temperature (e.g., 77K or more and 313K or less) below room temperature. The phosphorescent material preferably contains a metal element with a large spin-orbit interaction, and an organic metal complex, a metal complex (platinum complex), a rare earth metal complex, etc. can be used. Specifically, it is preferred to contain a transition metal element, and it is particularly preferred to contain a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) or platinum (Pt)), and it is particularly preferred to contain iridium. Iridium can increase the probability of direct transition between the singlet ground state and the triplet excited state, so it is preferred.

[0335] <<Phosphorescent substances (450nm and above and 570nm and below: blue or green)>> Examples of phosphorescent substances that emit blue or green light and have an emission spectrum with a peak wavelength of 450 nm to 570 nm include the following substances.

[0336] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp) 3 ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as: [Ir(Mptz) 3 ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as: [Ir(iPrptz-3b) 3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as: [Ir(iPr5btz) 3 ]) and other organic metal complexes with a 4H-triazole ring; tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as: [Ir(Mptz1-mp) 3 ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as: [Ir(Prptz1-Me) 3 ]) and other organic metal complexes with 1H-triazole rings; fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviated as: [Ir(iPrpim) 3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as: [Ir(dmpimpt-Me) 3 ]) and other organic metal complexes having an imidazole ring; and bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ]iridium(III)tetrakis(1-pyrazolyl)borate (abbreviated as FIr6), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ]iridium(III) picolinate (abbreviated as FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinium-N,C 2’ Iridium(III) picolinate (abbreviated as [Ir(CF 3 ppy) 2 (pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ]Organometallic complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium (III) acetylacetonate (abbreviation: FIr(acac)).

[0337] <<Phosphorescent substances (495nm or more and 590nm or less: green or yellow)>> Examples of phosphorescent substances that emit green or yellow light and have an emission spectrum with a peak wavelength of 495 nm to 590 nm include the following substances.

[0338] For example, tris(4-methyl-6-phenylpyrimidine)iridium(III) (abbreviated as [Ir(mppm) 3 ]), tri(4-tert-butyl-6-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(tBuppm) 3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(mppm) 2 (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidine)iridium(III) (abbreviated as: [Ir(tBuppm) 2 (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidine]iridium(III) (abbreviated as: [Ir(nbppm) 2 (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidine]iridium(III) (abbreviated as: [Ir(mpmppm) 2 (acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN 3 ]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp) 2 (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidine)iridium(III) (abbreviated as: [Ir(dppm) 2 (acac)]) and other organometallic iridium complexes with pyrimidine rings; (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazine)iridium(III) (abbreviated as: [Ir(mppr-Me) 2 (acac)]), (acetylacetonate)bis(5-isopropyl-3-methyl-2-phenylpyrazine)iridium(III) (abbreviated as: [Ir(mppr-iPr) 2 (acac)]) and other organic metal iridium complexes with pyrazine rings; tris(2-phenylpyridinium-N,C 2’ )Iridium(III) (abbreviation: [Ir(ppy) 3 ]), bis(2-phenylpyridinium-N,C 2’ )iridium(III) acetylacetonate (abbreviated as: [Ir(ppy) 2 (acac)]), bis(benzo[h]quinoline)iridium(III)acetylacetonate (abbreviated as: [Ir(bzq) 2 (acac)]), tris(benzo[h]quinoline)iridium(III) (abbreviated as: [Ir(bzq) 3 ]), tris(2-phenylquinoline-N,C 2’ )iridium(III) (abbreviation: [Ir(pq) 3 ]), bis(2-phenylquinoline-N,C 2’ )iridium(III) acetylacetonate (abbreviated as: [Ir(pq) 2(acac)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-phenyl-2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: [Ir(ppy) 2 (4dppy)]), bis[2-(2-pyridyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC], [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN 2 )phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3) 2 (mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridyl-κN]benzofurano[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridyl-κN]phenyl-κC}iridium(III) (abbreviated as: Ir(5mtpy-d6) 2 (mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as: Ir(ppy) 2 (mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) 2 (mdppy)) and other organic metal iridium complexes with pyridine rings; bis(2,4-diphenyl-1,3-oxazol-N,C 2’ )iridium(III) acetylacetonate (abbreviated as: [Ir(dpo) 2 (acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridine-N,C 2’ Iridium(III) acetylacetonate (abbreviated as: [Ir(p-PF-ph) 2 (acac)]), bis(2-phenylbenzothiazole-N,C 2’ )iridium(III) acetylacetonate (abbreviated as: [Ir(bt) 2 (acac)]) and other organic metal complexes, tris(acetylacetonato)(monophanate)terbium(III) (abbreviated as: [Tb(acac) 3 (Phen)]) and other rare earth metal complexes.

[0339] <<Phosphorescent substances (570nm and above and 750nm and below: yellow or red)>> Examples of phosphorescent substances that exhibit yellow or red light and have an emission spectrum with a peak wavelength of 570 nm to 750 nm include the following substances.

[0340] For example, (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviated as [Ir(5mdppm) 2 (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethane)iridium(III) (abbreviated as: [Ir(5mdppm) 2 (dpm)]), (dipivaloylmethane)bis[4,6-di(naphthalene-1-yl)pyrimidinyl]iridium(III) (abbreviated as: [Ir(d1npm) 2 (dpm)]) and other organic metal complexes with pyrimidine rings; (acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as: [Ir(tppr) 2 (acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethane)iridium(III) (abbreviated as: [Ir(tppr) 2 (dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviation: [Ir(dmdppr-P) 2 (dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviation: [Ir(dmdppr-dmCP) 2 (dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedione-κ 2 O, O') iridium (III) (abbreviation: [Ir(dmdppr-dmp) 2 (dpm)]), (acetylacetonato)bis(2-methyl-3-phenylquinoxalinato)]-N,C 2’ )iridium(III) (abbreviation: [Ir(mpq) 2 (acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C2’ ) Iridium(III) (abbreviation: [Ir(dpq) 2 (acac)]), bis[2,3-bis(4-fluorophenyl)quinoxalinato](acetylacetonato)iridium(III) (abbreviation: [Ir(Fdpq) 2 (acac)]) and other organometallic complexes with pyrazine rings; tris(1-phenylisoquinoline-N,C 2’ ) iridium(III) (abbreviation: [Ir(piq) 3 )], bis(1-phenylisoquinoline-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) 2 (acac)]) and bis[4,6-dimethyl-2-(2-quinolin-κN)phenyl-κC](2,4-pentanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmpqn) 2 (acac)]) and other organometallic complexes with pyridine rings; platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]); or tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) 3 (Phen)]) and tris[1-(2-thienoyl)-3,3,3-trifluoroacetone](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) 3 (Phen)]) and other rare earth metal complexes.

[0341] <<TADF Material>> In addition, the following materials can be used as TADF materials. A TADF material refers to a material with a small energy difference between the S1 energy level and the T1 energy level (preferably 0.2 eV or less) and capable of up-converting the triplet excited state to the singlet excited state (reverse intersystem crossing) using minute thermal energy and efficiently emitting luminescence (fluorescence) from the singlet excited state. The conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: the energy difference between the triplet excited energy level and the singlet excited energy level is 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. The delayed fluorescence emitted by the TADF material refers to luminescence with the same spectrum as ordinary fluorescence but a very long lifetime. Its lifetime is 1×10 -6 seconds or more or 1×10 -3 seconds or more.

[0342] In addition, the TADF material can be used as an electron transport material, a hole transport material, or a host material.

[0343] As TADF materials, for example, fullerene and its derivatives, acridine derivatives such as prussicin, eosin, etc. can be cited. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In) or palladium (Pd) can be cited. As metal-containing porphyrins, for example, protoporphyrin-tin fluoride complex (abbreviated as: SnF 2 (Proto IX)), mesoporphyrin-tin fluoride complex (abbreviated as SnF 2 (Meso IX)), hematoporphyrin-tin fluoride complex (abbreviated as SnF 2 (HematoIX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviated as: SnF 2 (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviated as: SnF 2 (OEP)), protoporphyrin-tin fluoride complex (abbreviated as SnF 2 (Etio I)) and octaethylporphyrin-platinum chloride complex (PtCl 2 OEP) etc.

[0344] [Chemical formula 88]

[0345] In addition to the above, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(1 0H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviated as PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthene-9-one (abbreviated as ACRXTN), dimethoxybenzylamine [4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofurano[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl -3,3'-biphenyl-9H-carbazole-9-yl)phenyl]benzofurano[3,2-d]pyrimidine (abbreviated as: 4PCCzPBfpm), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-biphenyl-9H-carbazole (abbreviated as: mPCCzPTzn-02), and other heteroaromatic compounds having π-electron-rich heteroaromatic compounds and π-electron-deficient heteroaromatic compounds.

[0346] In addition, in the substance in which the π-electron-rich heteroaromatic compound and the π-electron-deficient heteroaromatic compound are directly bonded, the donor property of the π-electron-rich heteroaromatic compound and the acceptor property of the π-electron-deficient heteroaromatic compound are both strong, and the energy difference between the singlet excited state and the triplet excited state becomes small, so it is particularly preferred. In addition, as a TADF material, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium can also be used. This TADF material has a short luminescence lifetime (excitation lifetime), so it can suppress the efficiency reduction in the high brightness area of ​​the light-emitting device.

[0347] [Chemical formula 89]

[0348] In addition to the above, as a material having the function of converting triplet excitation energy into luminescence, a nanostructure of a transition metal compound having a perovskite structure can be cited. Metal halide perovskite nanostructures are particularly preferred. As the nanostructure, nanoparticles and nanorods are preferred.

[0349] In the light-emitting layer (113, 113a, 113b, 113c), as an organic compound (host material, etc.) used in combination with the above-mentioned light-emitting substance (guest material), one or more substances having a larger energy gap than the light-emitting substance (guest material) can be used.

[0350] <<Fluorescent host material>> When the light-emitting material used for the light-emitting layer (113, 113a, 113b, 113c) is a fluorescent light-emitting material, as an organic compound (host material) used in combination with the light-emitting material, it is preferred to use an organic compound whose singlet excited state energy level is large and whose triplet excited state energy level is small or an organic compound with a high fluorescence quantum yield. Therefore, as long as the organic compound satisfies the above conditions, the hole transport material (described above) and the electron transport material (described later) shown in this embodiment can be used. In addition, the organic compound described in Embodiment 1 can be used.

[0351] Although part of the content is repeated in the above specific examples, from the viewpoint of preferably using in combination with a light-emitting substance (fluorescent light-emitting substance), examples of the organic compound (host material) include anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, (chrysene) derivatives, dibenzo[g,p] Derivatives and other fused polycyclic aromatic compounds.

[0352] Specific examples of organic compounds (host materials) preferably used in combination with fluorescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as DPCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9,10-diphenylanthracene (abbreviated as DPAnth), N,N-diphenyl-9-[4-( 10-phenyl-9-anthracenyl)phenyl]-9H-carbazole-3-amine (abbreviated as: CzA1PA), 4-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthracenyl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviated as: PCAPBA), N-(9,10-diphenyl-2-anthracenyl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviated as: 2PCAPA), 6,12-dimethoxy-5,11-diphenyl N,N,N',N',N",N",N"',N"'-octaphenyldibenzo[g,p] -2,7,10,15-tetramine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α, β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracen-yl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: α, β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracen-yl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPhA), 9-(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), )-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthryl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 9,9'-bianthracene (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)phenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)phenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrene)benzene (abbreviation: TPB3), 5,12-diphenyl tetracene, 5,12-bis(biphenyl-2-yl) tetracene, etc.

[0353] <<Phosphorescent host material>> When the light-emitting material used for the light-emitting layer (113, 113a, 113b, 113c) is a phosphorescent light-emitting material, as an organic compound (host material) used in combination with the light-emitting material, an organic compound whose triplet excitation energy (energy difference between the ground state and the triplet excited state) is greater than the triplet excitation energy of the light-emitting material can be selected. Note that when a plurality of organic compounds (for example, a first host material and a second host material (or an auxiliary material)) are used in combination with a light-emitting material in order to form an exciplex, it is preferable to use these plurality of organic compounds mixed with the phosphorescent light-emitting material. Alternatively, the organic compound described in Embodiment 1 may be used.

[0354] By adopting such a structure, light emission by ExTET (Exciplex-Triplet Energy Transfer) utilizing energy transfer from an exciplex to a luminescent substance can be efficiently obtained. As a combination of multiple organic compounds, a combination that easily forms an exciplex is preferably used, and a combination of a compound that easily receives holes (hole transport material) and a compound that easily receives electrons (electron transport material) is particularly preferred.

[0355] Although part of the content is repeated in the above specific examples, from the viewpoint of the preferred combination with the light-emitting substance (phosphorescent light-emitting substance), examples of the organic compound (host material, auxiliary material) include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (organic compounds having a dibenzofuran ring), and the like. Organisms (organic compounds having a benzimidazole ring), quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), furanodiazine derivatives (organic compounds having a furanodiazine ring), zinc and aluminum metal complexes, etc.

[0356] Note that among the above organic compounds, specific examples of aromatic amines and carbazole derivatives as organic compounds having a high hole-transporting property include the same materials as the above-mentioned specific examples of the hole-transporting material, and these materials are preferably used as the host material.

[0357] Specific examples of dibenzothiophene derivatives and dibenzofuran derivatives as organic compounds having high hole transport properties among the above organic compounds include 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, and II, 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviated as: DBTFLP-III), 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as: DBTFLP-IV), 4-[3-(triphenyl-2-yl)phenyl]dibenzothiophene (abbreviated as: mDBTPTp-II), etc. These materials are preferably used as the main materials.

[0358] In addition, preferred host materials include metal complexes having oxazolyl ligands and thiazole ligands, such as bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviated as ZnBTZ).

[0359] In addition, among the above-mentioned organic compounds, specific examples of oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, phenanthroline derivatives, etc. as organic compounds with high electron transport properties include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4 Organic compounds containing a heteroaromatic ring having a polyazole ring, such as 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mDBTBIm-II), and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS). organic compounds containing a heteroaromatic ring having a pyridine ring, such as 2-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9 H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), etc.These materials are preferably used as the host material.

[0360] Among the above-mentioned organic compounds, specific examples of pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furanodiazine derivatives as organic compounds with high electron transport properties include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine) (abbreviation: 4,6mCzP2Pm), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl] phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), 1,3,5-tris[3-(3-pyridine)phenyl]benzene (abbreviated as TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviated as 4,6mCzBP2Pm), 2-[3'-(9,9- dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), : 9pmDBtBPNfpr), 11-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviated as: 11mDBtBPPnfpr), 11-[3'-(dibenzothiophene-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviated as 12PCCzPnfpr), 9-[(3'-9-phenyl-9H-carbazole-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho [1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furano[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenyl] naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylene-2 9-(4,6-diphenyl-1,3,5-triazine)-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn), 2,6-bis(4-naphth-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',Organic compounds containing heteroaromatic rings having diazine rings, such as 1-(1-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), are preferably used as the host material.

[0361] Among the above organic compounds, specific examples of metal complexes of organic compounds with high electron transport properties include tris(8-hydroxyquinoline)aluminum(III) (abbreviated as Alq), tris(4-methyl-8-hydroxyquinoline)aluminum(III) (abbreviated as Almq) of zinc or aluminum metal complexes. 3 ), bis(10-hydroxybenzo[h]quinolinolato)beryllium(II) (abbreviated as: BeBq 2 ), bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviated as: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviated as: Znq); metal complexes with quinoline ring or benzoquinoline ring, etc., these materials are preferably used as the main material.

[0362] In addition, as preferred main materials, polymer compounds such as poly(2,5-pyridinediyl) (abbreviated as PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviated as PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as PF-BPy) can also be used.

[0363] Furthermore, bipolar 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indole, which are organic compounds with high hole transport properties and high electron transport properties, Organic compounds having a dioxazine ring, such as indole[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazine-2-yl]-11,12-dihydro-12-phenyl-indole[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as the main material.

[0364] <Electron Transport Layer> The electron transport layer (114, 114a, 114b) is a layer that transports electrons injected from the second electrode 102 and the charge generation layer (106, 106a, 106b) by the electron injection layer (115, 115a, 115b) described later to the light-emitting layer (113, 113a, 113b). In addition, the light-emitting device of one embodiment of the present invention has improved heat resistance because the electron transport layer has a stacked structure. The electron transport material used for the electron transport layer (114, 114a, 114b) preferably has a 1×10 -6 cm 2 / Vs or more. In addition, as long as the electron transport property is higher than the hole transport property, substances other than the above can be used. In addition, the electron transport layer (114, 114a, 114b) works even if it is a single layer, but a stacked structure of more than two layers can also be used. Note that since the above-mentioned mixed material is heat-resistant, by performing a photolithography process on the electron transport layer using the mixed material, the influence of the thermal process on the device characteristics can be suppressed.

[0365] <<Electron Transport Materials>> As an electron transport material that can be used for the electron transport layer (114, 114a, 114b), an organic compound with high electron transport properties can be used, for example, a heteroaromatic compound can be used. Note that a heteroaromatic compound refers to a cyclic compound containing at least two different elements in the ring. Note that as a ring structure, a three-membered ring, a four-membered ring, a five-membered ring, a six-membered ring, etc. are included, and a five-membered ring or a six-membered ring is particularly preferred. As the element contained in the heteroaromatic compound, in addition to carbon, it is preferably any one or more of nitrogen, oxygen and sulfur. It is particularly preferred to use a heteroaromatic compound containing nitrogen (nitrogen-containing heteroaromatic compound), and it is preferred to use a nitrogen-containing heteroaromatic compound or a π-electron-deficient heteroaromatic compound containing the nitrogen-containing heteroaromatic compound. High electron transport materials (electron transport materials). The compound of embodiment 1 is used as an electron transport material because it has electron transport properties.

[0366] Note that the electron transport material may use a material different from the material used for the light-emitting layer. Not all excitons generated by the recombination of carriers in the light-emitting layer may contribute to luminescence, and sometimes diffuse to the layer in contact with the light-emitting layer or in the vicinity thereof. In order to avoid this phenomenon, the energy level (lowest singlet excitation level or lowest triplet excitation level) of the material used for the layer in contact with the light-emitting layer or in the vicinity thereof is preferably higher than that of the material used for the light-emitting layer. Thus, when a material different from the material used for the light-emitting layer is used for the electron transport material, a highly efficient device can be obtained.

[0367] Heteroaromatic compounds are organic compounds having at least one heteroaromatic ring.

[0368] Note that the heteroaromatic ring has any one of a pyridine ring, a diazine ring, a triazine ring, a polyazole ring, an oxazole ring, a thiazole ring, etc. Further, the heteroaromatic ring having a diazine ring includes a heteroaromatic ring having a pyrimidine ring, a pyrazine ring, or a pyridazine ring, etc. Further, the heteroaromatic ring having a polyazole ring includes a heteroaromatic ring having an imidazole ring, a triazole ring, or an oxadiazole ring.

[0369] The heteroaromatic ring includes a condensed heteroaromatic ring having a condensed ring structure. Note that examples of the condensed heteroaromatic ring include a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a furadiazine ring, and a benzimidazole ring.

[0370] Note that, for example, among heteroaromatic compounds containing any one or more of nitrogen, oxygen, sulfur, etc. in addition to carbon, as heteroaromatic compounds having a five-membered ring structure, there can be mentioned heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, heteroaromatic compounds having a benzimidazole ring, and the like.

[0371] For example, among heteroaromatic compounds containing any one or more of nitrogen, oxygen, sulfur, etc. in addition to carbon, as heteroaromatic compounds having a six-membered ring structure, there can be mentioned heteroaromatic compounds having heteroaromatic rings such as pyridine rings, diazine rings (including pyrimidine rings, pyrazine rings, pyridazine rings, etc.), triazine rings, and polyazole rings. Note that heteroaromatic compounds having a bipyridine structure, heteroaromatic compounds having a terpyridine structure, etc. can be mentioned, and they are included in the examples of heteroaromatic compounds connected to a pyridine ring.

[0372] Furthermore, examples of heteroaromatic compounds having a fused ring structure in which a portion of the six-membered ring structure is included include heteroaromatic compounds having fused heteroaromatic rings such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a furanodiazine ring (including a structure in which a furan ring of a furanodiazine ring is fused with an aromatic ring), and a benzimidazole ring.

[0373] Specific examples of heteroaromatic compounds having the above-mentioned five-membered ring structure (polyazole ring (including imidazole ring, triazole ring, oxadiazole ring), oxazole ring, thiazole ring, benzimidazole ring, etc.) include 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), -(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenyl)-1,2,4-triazole (abbreviation: p-EtTAZ), 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophene-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), etc.

[0374] Specific examples of heteroaromatic compounds having the above-mentioned six-membered ring structure (including heteroaromatic rings having pyridine rings, diazine rings, triazine rings, etc.) include 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like; 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl 1,3,5-triazine (abbreviated as PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviated as mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviated as mINc(II)PTzn), 2-[3'-(triphenylene-2-yl)biphenyl-3- 2-(Biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn), 2,6-bis(4-naphthylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl Heteroaromatic compounds containing a heteroaromatic ring having a triazine ring, such as 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1"-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviated as mBP-TPDBfTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as mDBtBPTzn), and mFBPTzn;4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9 -yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP- 4mDBtPBfpm, 9mDBtBPNfpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofurano[2,3-b]pyrazine (abbreviated as 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviated as 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine heteroaromatic compounds containing heteroaromatic rings having a diazine (pyrimidine) ring, such as 8-[(2,2'-binaphthyl)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), and the like. Note that the aromatic compounds containing the above heteroaromatic rings include heteroaromatic compounds having condensed heteroaromatic rings. ;

[0375] In addition, 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn) 2 Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviated as 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviated as 2,6(NP-PPm) 2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), etc.; heteroaromatic compounds containing heteroaromatic rings having a diazine (pyrimidine) ring, such as 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), etc.

[0376] Specific examples of the heteroaromatic compound having a fused ring structure in which a part of the heteroaromatic compound includes the above-mentioned six-membered ring structure (heteroaromatic compound having a fused ring structure) include bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2,2'-biphenyl-4,4'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviation: PPhen2BP), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)-4,7-diphenyl-1,10-phenanthro ... 2 Py), 2-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviated as 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviated as 2mCzBPDBq), 2-[4-(3,6 -diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 2CzPDBq-III), 7-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 7mDBTPDBq-II) and 6-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as: 6mDBTPDBq-II), 2mpPCBPDBq and other heteroaromatic compounds having a quinoxaline ring.

[0377] In addition to the above-mentioned heteroaromatic compounds, the electron transport layer (114, 114a, 114b) may also use the following metal complexes. Examples of the metal complexes include tris(8-hydroxyquinoline)aluminum(III) (abbreviated as: Alq3 )、Almq 3 , 8-Hydroxyquinoline-lithium (abbreviation: Liq), BeBq 2 , bis(2-methyl-8-hydroxyquinoline)(4-phenylphenol)aluminum(III) (abbreviation: BAlq), bis(8-hydroxyquinoline)zinc(II) (abbreviation: Znq), etc., metal complexes having a quinoline ring or a benzoquinoline ring, bis[2-(2-benzoxazolyl)phenol]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenol]zinc(II) (abbreviation: ZnBTZ), etc., metal complexes having an oxazole ring or a thiazole ring, etc.

[0378] In addition, as electron transport materials, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used.

[0379] In addition, the electron transport layer (114, 114a, 114b) may be a single layer or a stack of two or more layers containing the above-mentioned substances.

[0380] <Electron Injection Layer> The electron injection layer (115, 115a, 115b) is a layer containing a substance with high electron injection properties. The electron injection layer (115, 115a, 115b) is a layer used to improve the efficiency of injecting electrons from the second electrode 102. It is preferable to use a material whose work function value of the material used for the second electrode 102 and the LUMO energy level value of the material used for the electron injection layer (115, 115a, 115b) have a small difference (less than 0.5 eV). Therefore, as the electron injection layer 115, lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF 2 ), 8-hydroxyquinoline-lithium (abbreviated as Liq), 2-(2-pyridyl)phenol lithium (abbreviated as LiPP), 2-(2-pyridyl)-3-hydroxypyridine (pyridinolato) lithium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenol lithium (abbreviated as LiPPP), lithium oxide (LiO x ), alkali metals such as cesium carbonate, alkaline earth metals or their compounds. In addition, erbium fluoride (ErF 3), ytterbium (Yb) and other rare earth metals or rare earth metal compounds. Note that the electron injection layer (115, 115a, 115b) may be formed by mixing multiple materials mentioned above or by stacking multiple materials mentioned above. In addition, an electron compound may be used for the electron injection layer (115, 115a, 115b). As the electron compound, for example, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration may be cited. In addition, the substance constituting the electron transport layer (114, 114a, 114b) as described above may also be used.

[0381] In addition, a mixed material formed by mixing an organic compound with an electron donor (donor) can also be used for the electron injection layer (115, 115a, 115b). This mixed material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent performance in transporting the generated electrons. Specifically, for example, an electron transport material (metal complex and heteroaromatic compound, etc.) used for the electron transport layer (114, 114a, 114b) as described above can be used. As an electron donor, any substance that exhibits electron donating properties to organic compounds can be used. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferably used, and lithium, cesium, magnesium, calcium, erbium, ytterbium, etc. can be mentioned. In addition, alkali metal oxides and alkaline earth metal oxides are preferably used, and lithium oxide, calcium oxide, barium oxide, etc. can be mentioned. In addition, Lewis bases such as magnesium oxide can also be used. In addition, organic compounds such as tetrathiafulvalene (abbreviated as: TTF) can also be used. Alternatively, multiple of these materials can be stacked and used.

[0382] In addition, a mixed material formed by mixing an organic compound and a metal can also be used for the electron injection layer (115, 115a, 115b). Note that the organic compound used here preferably has a LUMO (Lowest Unoccupied Molecular Orbital) energy level of more than -3.6 eV and less than -2.3 eV. In addition, it is preferred to use a material having a non-shared electron pair.

[0383] Therefore, as an organic compound for the above-mentioned mixed material, a mixed material formed by mixing the above-mentioned heteroaromatic compounds and metals that can be used for the electron transport layer can also be used. The heteroaromatic compound is preferably a heteroaromatic compound having a five-membered ring structure (imidazole ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, benzimidazole ring, etc.), a heteroaromatic compound having a six-membered ring structure (pyridine ring, diazine ring (including pyrimidine ring, pyrazine ring, pyridazine ring, etc.), a triazine ring, a bipyridine ring, a terpyridine ring, etc.), a heteroaromatic compound having a condensed ring structure (quinoline ring, benzoxaline ring, quinoxaline ring, dibenzoquinoxaline ring, phenanthroline ring, etc.) having a six-membered ring structure, and the like. Materials with non-shared electron pairs. The specific materials have been described above, so their description is omitted here.

[0384] As the metal used for the mixed material, it is preferred to use transition metals belonging to Group 5, Group 7, Group 9 or Group 11 of the periodic table and materials belonging to Group 13, for example, Ag, Cu, Al or In. In addition, at this time, a single occupied orbital (SOMO) is formed between the organic compound and the transition metal.

[0385] In addition, for example, in the case of amplifying light obtained from the light-emitting layer 113b, it is preferably formed in a manner that the optical distance between the second electrode 102 and the light-emitting layer 113b is less than 1 / 4 of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, the optical distance can be adjusted by changing the film thickness of the electron transport layer 114b or the electron injection layer 115b.

[0386] In addition, if Figure 1D By providing the charge generation layer 106 between two organic compound layers (103a, 103b) as EL layers as in the light-emitting device shown in the figure, a structure (also referred to as a tandem structure) in which a plurality of EL layers are stacked between a pair of electrodes can be provided.

[0387] <Charge Generation Layer> The charge generation layer 106 has the following function: when a voltage is applied between the first electrode 101 (anode) and the second electrode 102 (cathode), electrons are injected into the organic compound layer 103a and holes are injected into the organic compound layer 103b. The charge generation layer 106 can have a structure in which an electron acceptor (acceptor) is added to a hole transport material (also called a P-type layer), and can also have a structure in which an electron donor (donor) is added to an electron transport material (also called an electron injection buffer layer). Alternatively, these two structures can be stacked. Furthermore, an electron relay layer can also be provided between the P-type layer and the electron injection buffer layer. Note that by using the above-mentioned materials to form the charge generation layer 106, the increase in driving voltage caused by stacking EL layers can be suppressed.

[0388] When the charge generation layer 106 has a structure in which an electron acceptor is added to a hole transport material of an organic compound (P-type layer), the hole transport material may be a material described in this embodiment. In addition, as an electron acceptor, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F) may be mentioned. 4 -TCNQ), chloranil, etc. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be cited. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, rhenium oxide, etc. can be cited. In addition, the above-mentioned acceptor materials can also be used. In addition, a mixed film in which the materials constituting the P-type layer are mixed can be used, and a single film containing each material can also be stacked.

[0389] When the charge generation layer 106 has a structure in which an electron donor is added to an electron transport material (electron injection buffer layer), the material described in this embodiment can be used as the electron transport material. In addition, as the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table and their oxides or carbonates can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li 2 O), cesium carbonate, etc. In addition, organic compounds such as tetrathianaphthacene can also be used as electron donors.

[0390] In the charge generation layer 106, when an electron relay layer is provided between the P-type layer and the electron injection buffer layer, the electron relay layer contains at least a substance having electron transport properties, and has the function of preventing the interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO energy level of the substance having electron transport properties contained in the electron relay layer is preferably located between the LUMO energy level of the acceptor substance in the P-type layer and the LUMO energy level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific value of the LUMO energy level of the substance having electron transport properties in the electron relay layer is preferably above -5.0 eV, more preferably above -5.0 eV and below -3.0 eV. In addition, as the substance having electron transport properties in the electron relay layer, it is preferred to use a phthalocyanine material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0391] Although Figure 1D Although a structure in which two organic compound layers 103 are stacked is shown, a stacked-layer structure of three or more EL layers may be employed by providing a charge generating layer between different EL layers.

[0392] <Cap layer> Note that although Figures 1A to 1E Although not shown in the figure, a cap layer may be provided on the second electrode 102 of the light emitting device. For example, a material with a high refractive index may be used for the cap layer. By providing the cap layer on the second electrode 102, the extraction efficiency of light emitted from the second electrode 102 may be improved.

[0393] Specific examples of materials that can be used for the cap layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothiophene[3,2-c]carbazole (abbreviated as BisBTc), 4,4',4"-(benzene-1,3,5-triyl)tris(dibenzothiophene) (abbreviated as DBT3P-II), etc. In addition, the organic compounds described in Implementation Example 1 can be used.

[0394] <Substrate> The light-emitting device shown in this embodiment can be formed on various substrates. Note that there is no particular limitation on the type of substrate. Examples of the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate including a stainless steel foil, a tungsten substrate, a substrate including a tungsten foil, a flexible substrate, a laminated film, a paper including a fibrous material, or a substrate film.

[0395] Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic resins, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, epoxy resins, inorganic vapor-deposited films, and paper.

[0396] In addition, when manufacturing the light-emitting device shown in this embodiment, a vapor phase method such as evaporation, a liquid phase method such as spin coating and inkjet can be used. As an evaporation method, a physical evaporation method (PVD method) or a chemical vapor deposition method (CVD: Chemical Vapor Deposition method) such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, and vacuum evaporation can be used. In particular, a layer with various functions (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, electron injection layer 115) included in the EL layer of the light-emitting device can be formed by a evaporation method (vacuum evaporation method), a coating method (dip coating, dye coating, rod coating, spin coating, spray coating, etc.), a printing method (inkjet method, screen printing (porcelain printing) method, offset printing (lithography) method, flexographic printing (letterpress printing) method, gravure printing, microcontact printing, etc.) and the like.

[0397] Note that when using the above-mentioned coating method, printing method or other film forming method, high molecular weight compounds (oligomers, dendrimers, polymers, etc.), medium molecular weight compounds (compounds between low molecular weight and high molecular weight: molecular weight of 400 to 4000), inorganic compounds (quantum dot materials, etc.) can be used. Note that as quantum dot materials, colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, core-type quantum dot materials, etc. can be used.

[0398] The materials of each layer (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, electron injection layer 115) of the organic compound layer 103 constituting the light-emitting device shown in this embodiment are not limited to the materials shown in this embodiment, and any material that can satisfy the functions of each layer can be used in combination.

[0399] In this specification and the like, "layer" and "film" can be interchanged.

[0400] The structure described in this embodiment can be used in combination with the structure described in other embodiment modes as appropriate.

[0401] Implementation 3 like Figure 2A and Figure 2B As shown in FIG. 1 , a light-emitting device is formed by forming a plurality of light-emitting devices described in Embodiment Mode 2 over an insulating layer 175. In this embodiment mode, a light-emitting device which is one embodiment of the present invention is described in detail.

[0402] The light emitting device 1000 includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0403] In this specification, for example, the subpixel 110 may be used to describe common features among the subpixel 110R, the subpixel 110G, and the subpixel 110B. Also, for components distinguished by letters, the common features among the components may be described using symbols without letters.

[0404] Sub-pixel 110R emits red light, sub-pixel 110G emits green light, and sub-pixel 110B emits blue light. Thus, an image can be displayed on pixel portion 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are used as examples for description, but the present invention is not limited to this structure. That is, sub-pixels of other colors can also be combined. For example, the number of sub-pixels is not limited to three, but can be four or more. As four sub-pixels, for example: sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and yellow (Y); and sub-pixels of four colors, R, G, B, and infrared light (IR); etc.

[0405] In this specification and the like, the row direction may be referred to as the X direction and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly intersect.

[0406] exist Figure 2A In the example shown, sub-pixels of different colors are arranged in the X direction, and sub-pixels of the same color are arranged in the Y direction. Note that sub-pixels of different colors may be arranged in the Y direction, and sub-pixels of the same color may be arranged in the X direction.

[0407] The connection portion 140 and the region 141 may be provided outside the pixel portion 177. For example, the region 141 is preferably provided between the pixel portion 177 and the connection portion 140. The organic compound layer 103 is provided in the region 141. In addition, the connection portion 140 is provided with a conductive layer 151C.

[0408] exist Figure 2A In the example shown, the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but there is no particular limitation on the positions of the region 141 and the connection portion 140. In addition, the region 141 and the connection portion 140 may be one or more.

[0409] Figure 2B is along Figure 2A An example of a cross-sectional view along the dot-dash line A1-A2 in FIG. Figure 2B As shown, the light emitting device 1000 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is preferably disposed on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 are provided with openings that reach the conductive layer 172, and a plug 176 is provided in a manner of being embedded in the opening.

[0410] In the pixel portion 177, a light emitting device 130 (one of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B) is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light emitting device 130. The substrate 120 is attached to the protective layer 131 via a resin layer 122. In addition, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 may be provided between adjacent light emitting devices 130.

[0411] Figure 2B Although the cross sections of the plurality of inorganic insulating layers 125 and the plurality of insulating layers 127 are shown, the inorganic insulating layers 125 and the insulating layers 127 are preferably formed as a continuous layer when the light emitting device 1000 is viewed from above. That is, the inorganic insulating layers 125 and the insulating layers 127 are preferably insulating layers having openings on the first electrode.

[0412] Figure 2B As the light emitting device 130, a light emitting device 130R, a light emitting device 130G, and a light emitting device 130B are shown. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B emit light of different colors. For example, the light emitting device 130R may emit red light, the light emitting device 130G may emit green light, and the light emitting device 130B may emit blue light. In addition, the light emitting device 130R, the light emitting device 130G, or the light emitting device 130B may also emit other visible light or infrared light.

[0413] The organic compound layer 103 includes at least a light-emitting layer, and may include other functional layers (hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer, etc.). In addition, the organic compound layer 103 and the common layer 104 may be combined to form the functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) included in the EL layer that emits light.

[0414] The light emitting device of one embodiment of the present invention may have a top emission structure that emits light in a direction opposite to a substrate on which the light emitting device is formed. Alternatively, the light emitting device of one embodiment of the present invention may have a bottom emission structure.

[0415] The light-emitting device 130R has the structure shown in Embodiment 2, including a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer 104.

[0416] Note that the common layer 104 is not necessarily provided. When the common layer 104 is provided, damage to the organic compound layer 103R caused by a later process can be reduced. In addition, when the common layer 104 is provided, the common layer 104 can also be used as an electron injection layer. When the common layer 104 is used as an electron injection layer, the stacked structure of the organic compound layer 103R and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 1.

[0417] Here, the light-emitting device 130 has the structure shown in embodiment 2, including a first electrode (pixel electrode) formed by a conductive layer 151 and a conductive layer 152, an organic compound layer 103 on the first electrode, a common layer 104 on the organic compound layer 103, and a second electrode (common electrode) 102 on the common layer 104.

[0418] One of the pixel electrode and the common electrode included in the light emitting device is used as an anode, and the other is used as a cathode. Unless otherwise specified, the following description is based on the premise that the pixel electrode is used as an anode and the common electrode is used as a cathode.

[0419] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each formed in an island shape or independently for each light-emitting color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-definition light-emitting device. As a result, crosstalk can be suppressed, and a light-emitting device with extremely high contrast can be realized. In particular, a light-emitting device with high current efficiency at low brightness can be realized.

[0420] The organic compound layer 103 may also be provided in a manner covering the top surface and the side surface of the first electrode (pixel electrode) of the light-emitting device 130. Thus, it is easier to increase the aperture ratio of the light-emitting device 1000 than in a structure in which the end of the organic compound layer 103 is located on the inner side of the end of the pixel electrode. In addition, by covering the side surface of the pixel electrode of the light-emitting device 130 with the organic compound layer 103, it is possible to suppress the contact between the pixel electrode and the second electrode 102, thereby suppressing the short circuit of the light-emitting device 130. In addition, the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the end of the organic compound layer 103 can be increased. Furthermore, since the end of the organic compound layer 103 may be damaged by processing, by using the region away from the end of the organic compound layer 103 as the light-emitting region, the reliability of the light-emitting device 130 can be improved.

[0421] In addition, in the light-emitting device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device may also have a stacked structure. Figure 2BIn the example shown, the first electrode of the light emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152 .

[0422] For example, when the light-emitting device 1000 has a top emission structure, in the pixel electrode of the light-emitting device 130, it is preferred that the conductive layer 151 is a layer with high visible light reflectivity, and the conductive layer 152 is a layer with visible light transmittance and a large work function. The higher the visible light reflectivity of the pixel electrode, the higher the extraction efficiency of the light emitted by the organic compound layer 103 can be. In addition, when the pixel electrode is used as an anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Therefore, by making the pixel electrode of the light-emitting device 130 have a stacked structure of the conductive layer 151 with high visible light reflectivity and the conductive layer 152 with a large work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0423] Specifically, the visible light reflectance of conductive layer 151 is preferably, for example, 40% to 100%, more preferably 70% to 100%. When conductive layer 152 is an electrode having visible light transmittance, its visible light transmittance is preferably, for example, 40% or more.

[0424] In addition, when a film deposited after forming a pixel electrode having a stacked structure is removed by a wet etching method or the like, the etching solution may infiltrate the structure. When the infiltrated solution contacts the pixel electrode, galvanic corrosion may occur between the multiple layers constituting the pixel electrode, causing the pixel electrode to deteriorate.

[0425] In view of this, it is preferable to form the conductive layer 152 in such a manner as to cover the top surface and the side surface of the conductive layer 151. By covering the conductive layer 151 with the conductive layer 152, the impregnated chemical solution does not contact the conductive layer 151, and galvanic corrosion in the pixel electrode can be suppressed. Therefore, the light-emitting device 1000 can be manufactured by a method with a high yield rate, thereby realizing an inexpensive light-emitting device. In addition, the occurrence of defects in the light-emitting device 1000 can be suppressed, so the light-emitting device 1000 can be a light-emitting device with high reliability.

[0426] For example, a metal material can be used as the conductive layer 151. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys obtained by appropriately combining these metals can be used.

[0427] As the conductive layer 152, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon is preferably used. In particular, indium tin oxide containing silicon has a large work function, for example, 4.0 eV or more, and can be preferably used as the conductive layer 152.

[0428] In addition, each of the conductive layer 151 and the conductive layer 152 may have a stacked-layer structure including a plurality of layers of different materials. In this case, the conductive layer 151 may include a layer using a material that can be used for the conductive layer 152, such as a conductive oxide, and the conductive layer 152 may include a layer using a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked-layer structure with two or more layers, the layer in contact with the conductive layer 152 may be a layer including the same material as the material of the layer in contact with the conductive layer 151 in the conductive layer 152.

[0429] The end of the conductive layer 151 preferably has a tapered shape. Specifically, the end of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side of the conductive layer 151 also has a tapered shape. By making the end of the conductive layer 152 have a tapered shape, the coverage of the organic compound layer 103 provided along the side of the conductive layer 152 can be improved.

[0430] When the conductive layer 151 or the conductive layer 152 has a stacked-layer structure, it is preferable that at least one of the stacked layers has a tapered side surface. In addition, in the stacked-layer structure constituting each conductive layer, each layer may have a different tapered shape.

[0431] Figure 3A 1 is a diagram when the conductive layer 151 has a stacked structure of a plurality of layers including different materials. Figure 3A As shown, the conductive layer 151 includes a conductive layer 151_1, a conductive layer 151_2 on the conductive layer 151_1, and a conductive layer 151_3 on the conductive layer 151_2. That is, Figure 3A The conductive layer 151 shown has a three-layer stacked structure. In this way, when the conductive layer 151 has a multi-layer stacked structure, the visible light reflectance of at least one of the layers constituting the conductive layer 151 may be higher than the visible light reflectance of the conductive layer 152 .

[0432] exist Figure 3AIn the example shown, the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3. It is preferable that the conductive layer 151_1 and the conductive layer 151_3 use a material that is less likely to deteriorate than the conductive layer 151_2. For example, the conductive layer 151_1 can use a material that is less likely to migrate due to contact with the insulating layer 175 than the conductive layer 151_2. In addition, the conductive layer 151_3 can use a material that is less likely to be oxidized than the conductive layer 151_2 and whose oxide has a lower resistivity than the oxide of the material used for the conductive layer 151_2.

[0433] As described above, by adopting a structure in which the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3, the range of choices for the material of the conductive layer 151_2 can be expanded. Thus, for example, the conductive layer 151_2 can be made into a layer whose visible light reflectance is higher than that of at least one of the conductive layer 151_1 and the conductive layer 151_3. For example, aluminum can be used as the conductive layer 151_2. In addition, an alloy containing aluminum can also be used as the conductive layer 151_2. In addition, titanium can be used as the conductive layer 151_1. Although titanium has a lower visible light reflectance than aluminum, it is less likely to migrate than aluminum even when it contacts the insulating layer 175. In addition, titanium can be used as the conductive layer 151_3. Although titanium has a lower visible light reflectance than aluminum, it is less likely to be oxidized than aluminum and the resistivity of oxide is lower than that of aluminum oxide.

[0434] In addition, silver or an alloy containing silver may also be used as the conductive layer 151_3. Silver has a characteristic of having a higher visible light reflectivity than titanium. Furthermore, silver is less easily oxidized than aluminum, and the resistivity of silver oxide is lower than that of aluminum oxide. Thus, when silver or an alloy containing silver is used as the conductive layer 151_3, the visible light reflectivity of the conductive layer 151 can be appropriately increased while suppressing the resistance increase of the pixel electrode caused by the oxidation of the conductive layer 151_2. Here, as the silver-containing alloy, for example, an alloy of silver, palladium and copper (Ag-Pd-Cu, also referred to as APC) can be used. In addition, when silver or an alloy containing silver is used as the conductive layer 151_3 and aluminum is used as the conductive layer 151_2, the visible light reflectivity of the conductive layer 151_3 can be increased compared to the visible light reflectivity of the conductive layer 151_2. Here, silver or an alloy containing silver may also be used as the conductive layer 151_2. In addition, silver or an alloy containing silver may also be used as the conductive layer 151_1.

[0435] On the other hand, a film made of titanium has better etching processability than a film made of silver. Therefore, by using titanium as the conductive layer 151_3, the conductive layer 151_3 can be easily formed. In addition, a film made of aluminum also has better etching processability than a film made of silver.

[0436] By making the conductive layer 151 have a stacked structure of a plurality of layers, the characteristics of the light-emitting device can be improved. For example, the light-emitting device 1000 can be a light-emitting device with high light extraction efficiency and reliability.

[0437] Here, when the light emitting device 130 adopts a microcavity structure, by using silver or an alloy containing silver, which is a material with high visible light reflectivity, as the conductive layer 151_3, the light extraction efficiency of the light emitting apparatus 1000 can be appropriately improved.

[0438] In addition, if Figure 3A As shown, the side surface of the conductive layer 151_2 may be located inside the side surfaces of the conductive layer 151_1 and the conductive layer 151_3 to form a protrusion depending on the material selection or processing method of the conductive layer 151. This reduces the coverage of the conductive layer 152 on the conductive layer 151, and the conductive layer 152 may be disconnected.

[0439] In view of this, it is preferred Figure 3A The insulating layer 156 is provided in this manner. Figure 3A An example is shown in which the insulating layer 156 is provided on the conductive layer 151_1 so as to have a region overlapping with the side surface of the conductive layer 151_2. This can suppress disconnection or thinning of the conductive layer 152 due to the protrusion, thereby suppressing poor connection and increase in driving voltage.

[0440] Note that although Figure 3A Although the entire side surface of the conductive layer 151_2 is covered by the insulating layer 156, part of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156. Similarly, in a pixel electrode having a structure shown below, part of the side surface of the conductive layer 151_2 may not be covered by the insulating layer 156.

[0441] In addition, if Figure 3A As shown, the insulating layer 156 preferably has a curved surface. Thus, for example, compared with a case where the side surface of the insulating layer 156 is perpendicular (parallel to the Z direction), the occurrence of disconnection in the conductive layer 152 covering the insulating layer 156 can be suppressed. In addition, when the side surface of the insulating layer 156 has a tapered shape, specifically a tapered shape with a taper angle of less than 90°, for example, compared with a case where the side surface of the insulating layer 156 is perpendicular, the occurrence of disconnection in the conductive layer 152 covering the insulating layer 156 can be suppressed. Thus, the light-emitting device 1000 can be manufactured by a method with a high yield. In addition, the occurrence of defects is suppressed, and the light-emitting device 1000 can be made into a light-emitting device with high reliability.

[0442] Note that one embodiment of the present invention is not limited to this. For example, FIG. 3B to FIG. 3D Other structures of the first electrode 101 are shown.

[0443] Figure 3B The structure is as follows: Figure 3A In the first electrode 101, the insulating layer 156 covers the side surfaces of the conductive layer 151_1, the conductive layer 151_2, and the conductive layer 151_3 in addition to the side surface of the conductive layer 151_2.

[0444] Figure 3C is Figure 3A The insulating layer 156 is not provided in the first electrode 101.

[0445] Figure 3D The structure is as follows: Figure 3A In the first electrode 101, the conductive layer 151 does not have a stacked-layer structure and the conductive layer 152 has a stacked-layer structure.

[0446] The conductive layer 152_1 is a layer having higher adhesion to the conductive layer 152_2 than the insulating layer 175, for example. As the conductive layer 152_1, for example, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Thus, film peeling of the conductive layer 152_2 can be suppressed. In addition, the conductive layer 152_2 can be prevented from contacting the insulating layer 175.

[0447] The conductive layer 152_2 is a layer having a higher visible light reflectivity (for example, reflectivity for light of a specified wavelength in the range of greater than 400 nm and less than 750 nm) than the conductive layers 151, 152_1, and 152_3. The visible light reflectivity of the conductive layer 152_2 may be, for example, greater than 70% and less than 100%, preferably greater than 80% and less than 100%, and more preferably greater than 90% and less than 100%. In addition, for example, silver or an alloy containing silver may be used as the conductive layer 152_2. As an example of an alloy containing silver, an alloy of silver, palladium, and copper (APC) may be cited. Thus, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency. Note that a metal other than silver may also be used as the conductive layer 152_2.

[0448] When the conductive layer 151 and the conductive layer 152 are used as an anode, the conductive layer 152_3 is preferably a layer having a large work function. The conductive layer 152_3 is, for example, a layer having a larger work function than the conductive layer 152_2. As the conductive layer 152_3, for example, the same material as that which can be used for the conductive layer 152_1 can be used. For example, the same material can be used for the conductive layer 152_1 and the conductive layer 152_3.

[0449] Note that when the conductive layer 151 and the conductive layer 152 are used as a cathode, the conductive layer 152_3 is preferably a layer with a small work function. For example, the conductive layer 152_3 is a layer with a smaller work function than the conductive layer 152_2.

[0450] In addition, the conductive layer 152_3 is preferably a layer with high visible light transmittance (for example, transmittance to light of a specified wavelength in the range of greater than 400 nm and less than 750 nm). For example, the visible light transmittance of the conductive layer 152_3 is preferably higher than the visible light transmittance of the conductive layer 151 and the conductive layer 152_2. For example, the visible light transmittance of the conductive layer 152_3 can be greater than 60% and less than 100%, preferably greater than 70% and less than 100%, and more preferably greater than 80% and less than 100%. Thereby, the light absorbed by the conductive layer 152_3 in the light emitted by the organic compound layer 103 can be reduced. In addition, as described above, the conductive layer 152_2 under the conductive layer 152_3 can be a layer with high visible light reflectance. Therefore, the light-emitting device 1000 can be made into a light-emitting device with high light extraction efficiency.

[0451] Next, refer to FIG. 4A to FIG. 10C Description Figure 2A and Figure 2B An example of a method for manufacturing the light emitting device 1000 having the structure shown.

[0452] [Manufacturing method example 1] The thin film (insulating film, semiconductor film, conductive film, etc.) constituting the light-emitting device can be formed by sputtering, chemical vapor deposition (CVD), vacuum evaporation, pulsed laser deposition (PLD: Pulsed Laser Deposition) or ALD. As CVD methods, there are plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and thermal CVD method. In addition, as one of the thermal CVD methods, there is metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method.

[0453] In addition, the thin film (insulating film, semiconductor film, conductive film, etc.) constituting the light-emitting device can be formed by a wet deposition method such as spin coating, dipping, spraying, inkjet, dispenser, screen printing, offset printing, doctor knife, slit coating, roller coating, curtain coating or doctor knife coating.

[0454] In particular, when manufacturing a light-emitting device, a vacuum process such as evaporation and a solution process such as spin coating and inkjet can be used. As an evaporation method, physical evaporation methods (PVD methods) such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, vacuum evaporation, and chemical vapor deposition (CVD methods) can be cited. In particular, the functional layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) included in the organic compound layer can be formed by methods such as evaporation (vacuum evaporation, etc.), coating (dip coating, dye coating, rod coating, spin coating, spray coating), printing (inkjet, screen printing (porcelain printing), offset printing (lithography), flexographic printing (relief printing), gravure printing, or micro-contact printing, etc.).

[0455] In addition, when processing the thin film constituting the light-emitting device, for example, photolithography can be used for processing. Alternatively, the thin film can also be processed by nanoimprinting, sandblasting, stripping, etc. In addition, an island-shaped thin film can also be directly formed by a deposition method using a shielding mask such as a metal mask.

[0456] There are two typical methods of photolithography. One is to form a resist mask on the thin film to be processed, process the thin film by etching, and remove the resist mask. The other is to deposit a photosensitive thin film, then expose and develop it, and process the thin film into a desired shape.

[0457] For etching of the thin film, dry etching, wet etching, sand blasting, or the like can be used.

[0458] First, if Figure 4A As shown, an insulating layer 171 is formed on a substrate (not shown). Then, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 to cover the conductive layer 172 and the conductive layer 179. Then, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0459] As the substrate, a substrate having heat resistance at least enough to withstand the subsequent heat treatment can be used. In the case of using an insulating substrate as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, or an SOI substrate can also be used.

[0460] Then, if Figure 4AAs shown in FIG. 1 , openings reaching the conductive layer 172 are formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Next, the plug 176 is formed so as to be embedded in the opening.

[0461] Then, if Figure 4A As shown, a conductive film 151f, which will later become the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, and the conductive layer 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum deposition. In addition, as the conductive film 151f, for example, a metal material can be used.

[0462] Then, if Figure 4A As shown in FIG. 1 , for example, a resist mask 191 is formed on the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing the photosensitive material to light, and developing the photosensitive material.

[0463] Then, if Figure 4B As shown, the conductive film 151f in the region that does not overlap with the resist mask 191 is removed, for example, by etching, specifically, by dry etching. Note that when the conductive film 151f includes a layer of a conductive oxide such as indium tin oxide, the layer may be removed by wet etching. Thus, the conductive layer 151 is formed. Note that, when a portion of the conductive film 151f is removed by dry etching, a recess (also referred to as a depression) may be formed in the region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0464] Then, if Figure 4C As shown, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O、BCl 3 Or a Group 18 element such as He. Alternatively, the resist mask 191 may be removed by wet etching.

[0465] Then, if Figure 4D As shown in FIG. 1 , an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layers 151R, 151G, 151B, 151C, and the insulating layer 175. The insulating film 156f can be formed by, for example, CVD, ALD, sputtering, or vacuum evaporation.

[0466] The insulating film 156f may be made of an inorganic material. As the insulating film 156f, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film may be used. For example, as the insulating film 156f, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film containing silicon may be used. For example, as the insulating film 156f, silicon oxynitride may be used.

[0467] Then, if Figure 4E As shown, the insulating film 156f is processed to form the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C. For example, the top surface of the insulating film 156f is etched roughly uniformly, thereby forming the insulating layer 156. Such a process of etching uniformly to flatten is also called an etch-back process. Alternatively, the insulating layer 156 may be formed by photolithography.

[0468] Then, if Figure 5A As shown in FIG. 1 , a conductive film 152f, which will later become the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175. Specifically, for example, the conductive film 152f is formed so as to cover the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C.

[0469] The conductive film 152f can be formed by, for example, a sputtering method or a vacuum evaporation method. Alternatively, the conductive film 152f can be formed by an ALD method. Alternatively, as the conductive film 152f, for example, a conductive oxide can be used. Alternatively, as the conductive film 152f, a laminated structure of a film using a metal material and a film using a conductive oxide on the film can be used. For example, as the conductive film 152f, a laminated structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the film can be used.

[0470] Then, if Figure 5B As shown in the figure, the conductive film 152f is processed by, for example, photolithography, thereby forming the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Specifically, for example, after forming a resist mask, a portion of the conductive film 152f is removed by etching. For example, the conductive film 152f can be removed by wet etching. Note that the conductive film 152f can also be removed by dry etching. Thus, the pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0471] Next, the conductive layer 152 is preferably subjected to a hydrophobic treatment. Through the hydrophobic treatment, the surface of the treatment object can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface of the treatment object can be improved. By performing the hydrophobic treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 to be formed in the subsequent process can be improved to suppress film peeling. Note that the hydrophobic treatment may not be performed.

[0472] Then, if Figure 5C As shown in FIG. 1 , an organic compound film 103Bf which will later become the organic compound layer 103B is formed over the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the insulating layer 175 .

[0473] In the present invention, the organic compound film 103Bf includes a plurality of organic compound layers having at least one light-emitting layer. For details, reference can be made to the structure of the light-emitting device 130 described in Embodiment 2. Alternatively, a structure in which a plurality of organic compound layers having at least one light-emitting layer are stacked with an intermediate layer interposed therebetween may be employed.

[0474] like Figure 5C As shown, the organic compound film 103Bf is not formed on the conductive layer 152C. For example, by using a mask for defining a deposition range (also referred to as an area mask or a rough metal mask, etc., to distinguish it from a fine metal mask), the organic compound film 103Bf can be deposited only in a desired area. By adopting a deposition process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0475] The organic compound film 103Bf can be formed by, for example, an evaporation method, specifically, a vacuum evaporation method. Alternatively, the organic compound film 103Bf can be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0476] Then, if Figure 5D As shown in FIG. 1 , a sacrificial film 158Bf which will later become a sacrificial layer 158B and a mask film 159Bf which will later become a mask layer 159B are sequentially formed on the organic compound film 103Bf.

[0477] The sacrificial film 158Bf and the mask film 159Bf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum evaporation. Alternatively, they can be formed by the above-mentioned wet deposition method.

[0478] In addition, the sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Bf. The substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200° C. or less, preferably 150° C. or less, more preferably 120° C. or less, further preferably 100° C. or less, and further preferably 80° C. or less.

[0479] Note that in this embodiment, an example is shown in which the mask film has a two-layer structure of the sacrificial film 158Bf and the mask film 159Bf, but the mask film may have a single-layer structure or a stacked-layer structure of three or more layers.

[0480] By providing a sacrificial film on the organic compound film 103Bf, damage to the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, and the reliability of the light-emitting device can be improved.

[0481] The sacrificial film 158Bf is a film having high resistance to the processing conditions of the organic compound film 103Bf, specifically, a film having a large etching selectivity ratio with the organic compound film 103Bf. The mask film 159Bf is a film having a large etching selectivity ratio with the sacrificial film 158Bf.

[0482] The sacrificial film 158Bf and the mask film 159Bf are preferably films that can be removed by wet etching. Compared with dry etching, wet etching can reduce damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf.

[0483] When wet etching is used, it is particularly preferable to use an acidic solution, which preferably contains any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed solution of two or more acids (also called mixed acid).

[0484] As the sacrificial film 158Bf and the mask film 159Bf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0485] In addition, by using a film containing a material having ultraviolet light shielding properties as the sacrificial film 158Bf and the mask film 159Bf, it is possible to prevent ultraviolet rays from irradiating the organic compound layer during the exposure process, for example. By preventing ultraviolet rays from damaging the organic compound layer, the reliability of the light-emitting device can be improved.

[0486] Note that the film containing a material having ultraviolet light shielding properties also exhibits the same effect when used as a material for the inorganic insulating film 125f described later.

[0487] The sacrificial film 158Bf and the mask film 159Bf can each be made of, for example, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing the metal material. In particular, a low melting point material such as aluminum or silver is preferably used.

[0488] In addition, as the sacrificial film 158Bf and the mask film 159Bf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) or indium tin oxide containing silicon can be used respectively.

[0489] Note that element M (M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of the above-mentioned gallium.

[0490] As the sacrificial film 158Bf and the mask film 159Bf, for example, a semiconductor material such as silicon or germanium is used, which has a high affinity with the semiconductor manufacturing process and is therefore preferred. Alternatively, an oxide or nitride of the above-mentioned semiconductor material can be used. Alternatively, a non-metallic material such as carbon or its compound can be used. In addition, a metal such as titanium, tantalum, tungsten, chromium, aluminum, or an alloy containing one or more of them can be used. In addition, an oxide of the above-mentioned metal such as titanium oxide or chromium oxide, or a nitride such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0491] In addition, various inorganic insulating films can be used as the sacrificial film 158Bf and the mask film 159Bf. In particular, the oxide insulating film has higher adhesion to the organic compound film 103Bf than the nitride insulating film, so it is preferred. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide or silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf, respectively. As the sacrificial film 158Bf and the mask film 159Bf, for example, an aluminum oxide film can be formed by the ALD method. By using the ALD method, the damage to the substrate (especially the organic compound layer) can be reduced, so it is preferred.

[0492] An organic material may be used as one or both of the sacrificial film 158Bf and the mask film 159Bf. For example, as the organic material, a material that is soluble in a solvent that is chemically stable to at least the film located at the uppermost portion of the organic compound layer 103Bf may be used. In particular, a material that is soluble in water or alcohol may be used appropriately. When depositing the above-mentioned material, it is preferred that the material is applied by the above-mentioned wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then a heat treatment is performed to evaporate the solvent. At this time, it is preferred to perform the heat treatment in a reduced pressure atmosphere, thereby removing the solvent at a low temperature and in a short time, and reducing the thermal damage to the organic compound film 103Bf.

[0493] The sacrificial film 158Bf and the mask film 159Bf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer.

[0494] For example, an organic film (eg, a PVA film) formed using any of the evaporation method and the above-mentioned wet deposition method may be used as the sacrificial film 158Bf, and an inorganic film (eg, a silicon nitride film) formed using the sputtering method may be used as the mask film 159Bf.

[0495] Then, if Figure 5D As shown in FIG. 1 , a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by applying a photosensitive resin (photoresist), exposing it to light, and developing it.

[0496] The resist mask 190B may use a positive resist material or a negative resist material.

[0497] The resist mask 190B is provided at a position overlapping with the conductive layer 152B. The resist mask 190B is preferably also provided at a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the light emitting device. Note that the resist mask 190B may not be provided on the conductive layer 152C. Figure 5C As shown in the cross-sectional view taken along B1-B2 in FIG. 1 , the resist mask 190B is preferably provided so as to cover from the end of the organic compound film 103Bf to the end of the conductive layer 152C (the end on the organic compound film 103Bf side).

[0498] Then, if Figure 5EAs shown, a portion of the mask film 159Bf is removed using the resist mask 190B to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B and the conductive layer 152C. Then, the resist mask 190B is removed. Next, a portion of the sacrificial film 158Bf is removed using the mask layer 159B as a mask (also referred to as a hard mask) to form a sacrificial layer 158B.

[0499] The sacrificial film 158Bf and the mask film 159Bf can be processed by wet etching or dry etching, respectively. The sacrificial film 158Bf and the mask film 159Bf are preferably processed by wet etching.

[0500] By using the wet etching method, the damage to the organic compound film 103Bf during the processing of the sacrificial film 158Bf and the mask film 159Bf can be reduced compared to the case of using the dry etching method. Note that when using the wet etching method, it is particularly preferable to use an acidic liquid. When using the wet etching method, for example, it is preferable to use a developer, an aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, hydrofluoric acid, sulfuric acid, or a mixed liquid containing two or more of the above acids (also called a mixed acid).

[0501] Since the organic compound film 103Bf is not exposed when processing the mask film 159Bf, the range of processing methods is wider than that of processing the sacrificial film 158Bf. Specifically, when processing the mask film 159Bf, even if a gas containing oxygen is used as an etching gas, degradation of the organic compound film 103Bf can be further suppressed.

[0502] In addition, when dry etching is used in processing the sacrificial film 158Bf, degradation of the organic compound film 103Bf can be suppressed by not using an oxygen-containing gas as an etching gas. In the case of dry etching, for example, it is preferable to use a CF 4 , C 4 F 8 , SF 6 , CHF 3 , Cl 2 , H 2 O、BCl 3 Or a gas of a Group 18 element such as He is used as an etching gas.

[0503] The resist mask 190B can be removed by the same method as the resist mask 191. At this time, since the sacrificial film 158Bf is located at the uppermost surface and the organic compound film 103Bf is not exposed, it is possible to suppress the organic compound film 103Bf from being damaged in the process of removing the resist mask 190B. In addition, the range of options for the method of removing the resist mask 190B can be expanded.

[0504] Then, if Figure 5E As shown, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the organic compound layer 103B is formed by removing a portion of the organic compound film 103Bf using the mask layer 159B and the sacrifice layer 158B as a hard mask.

[0505] Therefore, if Figure 5E As shown in FIG. 1 , a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the conductive layer 152G and the conductive layer 152R are exposed.

[0506] The processing of the organic compound film 103Bf can be performed by dry etching or wet etching. For example, when processing is performed by dry etching, an etching gas containing oxygen can be used. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficient etching rate. Therefore, damage to the organic compound film 103Bf can be suppressed. In addition, defects such as adhesion of reaction products generated during etching can be suppressed.

[0507] Alternatively, an etching gas that does not contain oxygen may be used. For example, by using an etching gas that does not contain oxygen, degradation of the organic compound film 103Bf can be suppressed.

[0508] As described above, in one embodiment of the present invention, the mask layer 159B is formed by forming the resist mask 190B on the mask film 159Bf and removing a portion of the mask film 159Bf using the resist mask 190B. Then, the organic compound layer 103B is formed by removing a portion of the organic compound film 103Bf using the mask layer 159B as a mask. Therefore, it can be said that the organic compound layer 103B is formed by processing the organic compound film 103Bf using the photolithography method. In addition, a portion of the organic compound film 103Bf may be removed using the resist mask 190B. Then, the resist mask 190B may also be removed.

[0509] Here, the conductive layer 152G may be subjected to a hydrophobic treatment as required. When the organic compound film 103Bf is processed, for example, the surface state of the conductive layer 152G may become hydrophilic. By conducting the hydrophobic treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer to be formed in a subsequent step (here, the organic compound layer 103G) can be improved to suppress film peeling.

[0510] Then, if Fig. 6A As shown in FIG. 1 , an organic compound film 103Gf which will later become the organic compound layer 103G is formed over the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175 .

[0511] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Bf. In addition, the organic compound film 103Gf can have the same structure as that of the organic compound film 103Bf.

[0512] Then, if Figure 6B As shown, a sacrificial film 158Gf, which will later become a sacrificial layer 158G, and a mask film 159Gf, which will later become a mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159B. Then, a resist mask 190G is formed. The materials and formation methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those that can be used for the sacrificial film 158Bf and the mask film 159Bf. The materials and formation methods of the resist mask 190G are the same as those that can be used for the resist mask 190B.

[0513] The resist mask 190G is provided at a position overlapping with the conductive layer 152G.

[0514] Then, if Figure 6C As shown, a portion of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Next, a portion of the sacrificial film 158Gf is removed using the mask layer 159G as a mask to form the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, a portion of the organic compound film 103Gf is removed using the mask layer 159G and the sacrificial layer 158G as a hard mask to form the organic compound layer 103G.

[0515] Therefore, if Figure 6C As shown in FIG. 1 , a stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. In addition, the mask layer 159B and the conductive layer 152R are exposed.

[0516] In addition, for example, the conductive layer 152R may be subjected to a hydrophobic treatment.

[0517] Then, if Fig. 7A As shown in FIG. 1 , an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed over the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175 .

[0518] The organic compound film 103Rf can be formed by the same method as that used in forming the organic compound film 103Gf. In addition, the organic compound film 103Rf can have the same structure as that of the organic compound film 103Gf.

[0519] Then, if Figure 7B and Figure 7C As shown, a sacrificial layer 158R, a mask layer 159R, and an organic compound layer 103R are formed from the sacrificial film 158Rf, the mask layer 159Rf, and the organic compound film 103Rf, respectively, using a resist mask 190R. The formation method of the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R can refer to the description of the organic compound layer 103G.

[0520] Note that the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R are each preferably perpendicular or substantially perpendicular to the formed surface. For example, the angle formed by the formed surface and these side surfaces is preferably not less than 60 degrees and not more than 90 degrees.

[0521] As described above, the distance between two adjacent organic compound layers in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R formed using the photolithography method can be reduced to less than 8 μm, less than 5 μm, less than 3 μm, less than 2 μm, or less than 1 μm. Here, for example, the distance can be specified according to the distance between the opposite ends of the two adjacent organic compound layers in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In this way, by reducing the distance between the island-shaped organic compound layers, a light-emitting device with high clarity and a large aperture ratio can be provided. In addition, the distance between the first electrodes of adjacent light-emitting devices can be reduced, for example, to less than 10 μm, less than 8 μm, less than 5 μm, less than 3 μm, or less than 2 μm. In addition, the distance between the first electrodes of adjacent light-emitting devices is preferably greater than 2 μm and less than 5 μm.

[0522] Then, if Fig. 8A As shown, mask layer 159B, mask layer 159G and mask layer 159R are removed.

[0523] Note that, although the case where the mask layer 159B, the mask layer 159G, and the mask layer 159R are removed is described as an example in this embodiment, the mask layer 159B, the mask layer 159G, and the mask layer 159R may not be removed. For example, when the mask layer 159B, the mask layer 159G, and the mask layer 159R include the above-mentioned material having ultraviolet light shielding properties, the organic compound layer can be protected from light irradiation (including illumination light) by proceeding to the next step without removing the mask layer.

[0524] The mask layer removal process can use the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R when removing the mask layer can be reduced compared to the case of using a dry etching method.

[0525] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropyl alcohol (IPA), and glycerin.

[0526] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R and water adsorbed on the surface of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. For example, a heat treatment may be performed in an inert atmosphere or a reduced pressure atmosphere. The heat treatment may be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 120° C. The use of a reduced pressure atmosphere is preferred because drying can be performed at a lower temperature.

[0527] Then, if Figure 8B As shown, an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.

[0528] As described later, an insulating film that will become an insulating layer 127 later is formed in a manner that contacts the top surface of the inorganic insulating film 125f. Therefore, the top surface of the inorganic insulating film 125f preferably has a high affinity with the material (e.g., a photosensitive resin composition containing an acrylic resin) used to form the insulating film of the insulating layer 127. In order to improve this affinity, the top surface of the inorganic insulating film 125f can also be surface treated. Specifically, it is preferred to hydrophobize the top surface of the inorganic insulating film 125f (or improve its hydrophobicity). For example, it is preferably treated with a silanizing agent such as hexamethyldisilazane (HMDS). By hydrophobizing the top surface of the inorganic insulating film 125f in this way, an insulating film 127f can be formed with high adhesion.

[0529] Then, if Figure 8C As shown in FIG. 1 , an insulating film 127 f which will later become an insulating layer 127 is formed on the inorganic insulating film 125 f.

[0530] The inorganic insulating film 125f and the insulating film 127f are preferably deposited by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, the inorganic insulating film 125f is preferably deposited by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than when the insulating film 127f is deposited.

[0531] In addition, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. By increasing the substrate temperature during deposition, the inorganic insulating film 125f having a low impurity concentration and high barrier properties against at least one of water and oxygen can be formed even if the film thickness is thin.

[0532] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0533] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm, 5 nm or 10 nm and 200 nm, 150 nm, 100 nm or 50 nm within the above-mentioned substrate temperature range.

[0534] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferred because it can reduce deposition damage and deposit a film with high coverage. As the inorganic insulating film 125f, for example, an aluminum oxide film is preferably formed by the ALD method.

[0535] In addition, the inorganic insulating film 125f may be formed by a sputtering method, a CVD method, or a PECVD method having a higher deposition rate than the ALD method. Thus, a light-emitting device with high reliability can be manufactured with high productivity.

[0536] The insulating film 127f is preferably formed by the wet deposition method described above. The insulating film 127f is preferably formed by, for example, a photosensitive material by spin coating, and more specifically, is preferably formed by using a photosensitive resin composition containing an acrylic resin.

[0537] For example, it is preferred to use a resin composition containing a polymer, an acid generator and a solvent to form the insulating film 127f. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are regularly or irregularly repeated. As an acid generator, one or both of a compound that generates an acid by irradiating light and a compound that generates an acid by heating can be used. The resin composition may also contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesive aid, a surfactant and an antioxidant.

[0538] In addition, heat treatment (also referred to as pre-baking) is preferably performed after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. The substrate temperature during the heat treatment is preferably 50° C. to 200° C., more preferably 60° C. to 150° C., and further preferably 70° C. to 120° C. In this way, the solvent in the insulating film 127f can be removed.

[0539] Next, exposure is performed to sensitize a portion of the insulating film 127f with visible light or ultraviolet light. Here, in the case where a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated to a region where the insulating layer 127 is not formed in a later process. The insulating layer 127 is formed in a region sandwiched by any two of the conductive layer 152B, the conductive layer 152G, and the conductive layer 152R, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated to the conductive layer 152B, the conductive layer 152G, the conductive layer 152R, and the conductive layer 152C. Note that in the case where a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated to a region where the insulating layer 127 is to be formed.

[0540] The width of the insulating layer 127 to be formed later can be controlled by the region in which the insulating film 127f is exposed. In this embodiment, the insulating layer 127 is processed so that the insulating layer 127 has a portion overlapping with the top surface of the conductive layer 151.

[0541] Here, by providing an oxygen blocking insulating layer (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, diffusion of oxygen into the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced. When light (visible light or ultraviolet light) is irradiated to the organic compound layer, the organic compound contained in the organic compound layer sometimes becomes excited and promotes reaction with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated to the organic compound layer in an oxygen-containing atmosphere, oxygen may be bonded to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer can be reduced.

[0542] Then, if Fig.9A As shown, the exposed region in the insulating film 127f is removed by development to form the insulating layer 127a. The insulating layer 127a is formed in a region sandwiched by any two of the conductive layers 152B, 152G, and 152R and in a region surrounding the conductive layer 152C. Here, when an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as a developer.

[0543] Then, if Fig. 9B As shown, the insulating layer 127a is used as a mask to perform etching to remove a portion of the inorganic insulating film 125f, thereby reducing the film thickness of a portion of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. Hereinafter, the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0544] That is, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R are not completely removed in the first etching process, and the etching process is stopped in a state where the film thickness is reduced. In this way, by leaving the corresponding sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R on the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is possible to prevent the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R from being damaged in the subsequent process.

[0545] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, the inorganic insulating film 125f can be processed and the exposed sacrificial layer 158 can be thinned at the same time by the first etching process, which is preferred.

[0546] By using the insulating layer 127 a having tapered side surfaces as a mask for etching, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158B, 158G, and 158R can be easily tapered.

[0547] For example, when the first etching process is performed by dry etching, a chlorine-based gas may be used. As the chlorine-based gas, Cl 2 , BCl 3 、SiCl 4 and CCl 4 One gas or a mixture of two or more gases thereof may be added to the chlorine-based gas. In addition, one gas or a mixture of two or more gases thereof may be appropriately added to the chlorine-based gas. By utilizing dry etching, regions where the film thickness of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R is small can be formed with excellent in-plane uniformity.

[0548] The first etching process can be performed by wet etching, for example. By using the wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to the case of using the dry etching method.

[0549] Acidic chemical solutions are preferably used in wet etching. As the acidic chemical solution, a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, sulfuric acid, etc., or a mixed chemical solution containing two or more acids (also referred to as mixed acid) can be used.

[0550] Alternatively, wet etching may be performed using an alkaline solution. For example, TMAH may be used as an alkaline solution in wet etching of an aluminum oxide film. In this case, wet etching may be performed in a slurry coating manner.

[0551] Next, a heat treatment (also called post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side (see Fig. 9C). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere can be either an air atmosphere or an inert atmosphere. In addition, the heating atmosphere can be either an air atmosphere or a reduced pressure atmosphere. In the heat treatment of this step, it is preferred to increase the substrate temperature compared to the heat treatment (pre-bake) after the insulating film 127f is formed.

[0552] The heat treatment can improve adhesion between the insulating layer 127 and the inorganic insulating layer 125 and can also improve corrosion resistance of the insulating layer 127. In addition, by deforming the insulating layer 127a, a shape in which the end of the inorganic insulating layer 125 is covered by the insulating layer 127 can be achieved.

[0553] In the first etching process, the sacrificial layers 158B, 158G, and 158R are not completely removed, but the sacrificial layers 158B, 158G, and 158R are left in a thin state, so that the organic compound layers 103B, 103G, and 103R can be prevented from being damaged and deteriorated during the heat treatment. Thus, the reliability of the light-emitting device can be improved.

[0554] Then, if Fig. 10A As shown in the figure, etching is performed using the insulating layer 127 as a mask to remove a portion of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R. Note that at this time, a portion of the inorganic insulating layer 125 may also be removed. By this etching, an opening is formed in the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, and the top surface of the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, and the conductive layer 152C is exposed from the opening. Hereinafter, the etching process for exposing the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R using the insulating layer 127 as a mask is sometimes referred to as a second etching process.

[0555] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to the case of using the dry etching method. As with the first etching process, wet etching can be performed using an acid solution or an alkaline solution.

[0556] In addition, after partially exposing the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, a heat treatment may be further performed. By this heat treatment, water contained in the organic compound layer and water adsorbed on the surface of the organic compound layer can be removed. In addition, the shape of the insulating layer 127 may change due to the heat treatment. Specifically, the insulating layer 127 may expand in a manner covering at least one of the end of the inorganic insulating layer 125, the end of the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R, and the top surface of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0557] also, Fig. 10A An example is shown in which a portion of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127 and the tapered portion formed by the second etching process is exposed (see FIG. Figure 3A ).

[0558] In addition, the insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may sag and cover the end of the sacrificial layer 158G. In addition, for example, the end of the insulating layer 127 may contact the top surface of at least one of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0559] Then, if Fig. 10B As shown in FIG. 1 , a common electrode 155 is formed on the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a method such as a sputtering method or a vacuum evaporation method. Alternatively, the common electrode 155 can be formed by stacking a film formed by an evaporation method and a film formed by a sputtering method.

[0560] Then, if Fig. 10C As shown, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by vacuum evaporation, sputtering, CVD, ALD or the like.

[0561] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, thereby manufacturing a light-emitting device. As described above, in the method for manufacturing a light-emitting device according to one embodiment of the present invention, the insulating layer 156 is provided so as to include a region overlapping with the side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. Thus, the yield of the light-emitting device can be improved, and the occurrence of defects can be suppressed.

[0562] As described above, in a method for manufacturing a light-emitting device of one embodiment of the present invention, the island-shaped organic compound layer 103B, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103R are not formed using a high-precision metal mask but are formed by depositing a film on one surface and then processing it, so that the island-shaped layer can be formed with a uniform thickness. In addition, a high-definition light-emitting device or a light-emitting device with a high aperture ratio can be realized. In addition, even if the clarity or aperture ratio is high and the distance between sub-pixels is extremely short, the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be prevented from contacting each other in adjacent sub-pixels. Therefore, leakage current can be suppressed between sub-pixels. Thus, crosstalk can be prevented and a light-emitting device with extremely high contrast can be realized. In addition, even a light-emitting device including a tandem light-emitting device manufactured using a photolithography method can provide a light-emitting device with good characteristics.

[0563] Implementation 4 In this embodiment, refer to FIG. 11A to FIG. 11G as well as FIG. 12A to FIG. 12I A light-emitting device according to one embodiment of the present invention will be described.

[0564] [Pixel layout] In this embodiment, the following is mainly described. Figure 2A and Figure 2B Different pixel layouts. There is no particular limitation on the arrangement of sub-pixels, and various arrangement methods can be used. Examples of sub-pixel arrangements include stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, and Pentile arrangement.

[0565] In this embodiment, the top surface shape of the sub-pixel shown in the drawings corresponds to the top surface shape of the light-emitting region.

[0566] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, the above polygonal shapes with rounded corners, an ellipse, or a circle.

[0567] In addition, the circuit layout constituting the sub-pixel is not limited to the range of the sub-pixel shown in the drawings, and may be arranged outside the sub-pixel.

[0568] Fig.11A The pixels 178 are shown arranged in an S-stripe arrangement. Fig.11A The pixel 178 shown is composed of three sub-pixels: a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0569] Fig. 11BThe pixel 178 shown includes a sub-pixel 110R having a top surface shape that is approximately trapezoidal or triangular with rounded corners, a sub-pixel 110G having a top surface shape that is approximately trapezoidal or triangular with rounded corners, and a sub-pixel 110B having a top surface shape that is approximately quadrilateral or hexagonal with rounded corners. In addition, the light-emitting area of ​​the sub-pixel 110R is larger than that of the sub-pixel 110G. In this way, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel including a light-emitting device with high reliability can be smaller.

[0570] Fig. 11C The pixel 124a and the pixel 124b shown are arranged in a Pentile arrangement. Fig. 11C In the illustrated example, the pixel 124 a including the sub-pixel 110R and the sub-pixel 110G and the pixel 124 b including the sub-pixel 110G and the sub-pixel 110B are alternately arranged.

[0571] FIG. 11D to FIG. 11F The pixel 124a and the pixel 124b shown are arranged in a Delta arrangement. The pixel 124a includes two sub-pixels (sub-pixel 110R and sub-pixel 110G) in the upper row (first row) and one sub-pixel (sub-pixel 110B) in the lower row (second row). The pixel 124b includes one sub-pixel (sub-pixel 110B) in the upper row (first row) and two sub-pixels (sub-pixel 110R and sub-pixel 110G) in the lower row (second row).

[0572] Fig.11D An example is shown in which each sub-pixel has a top surface shape that is approximately quadrangular with rounded corners. Fig.11E An example in which each sub-pixel has a circular top surface shape is shown. Fig.11F An example is shown in which each sub-pixel has a top surface shape that is approximately hexagonal with rounded corners.

[0573] exist Fig.11F In the embodiment, each sub-pixel is arranged inside the hexagonal area that is arranged most closely. Each sub-pixel is arranged so that it is surrounded by six sub-pixels when focusing on one of the sub-pixels. In addition, sub-pixels that present light of the same color are arranged so that they are not adjacent. For example, each sub-pixel is arranged so that when focusing on the sub-pixel 110R, three sub-pixels 110G and three sub-pixels 110B that are alternately arranged surround the sub-pixel 110R.

[0574] Fig.11G An example is shown in which the sub-pixels of each color are arranged in a zigzag shape. Specifically, in a plan view, the positions of the upper sides of two sub-pixels arranged in the row direction (for example, the sub-pixel 110R and the sub-pixel 110G or the sub-pixel 110G and the sub-pixel 110B) are offset.

[0575] exist FIG. 11A to FIG. 11GIn the pixels shown, for example, it is preferred that the sub-pixel 110R is set as the sub-pixel R that presents red light, the sub-pixel 110G is set as the sub-pixel G that presents green light, and the sub-pixel 110B is set as the sub-pixel B that presents blue light. Note that the structure of the sub-pixels is not limited to this, and the colors presented by the sub-pixels and the arrangement order thereof can be appropriately determined. For example, the sub-pixel 110G can also be set as the sub-pixel R that presents red light, and the sub-pixel 110R can be set as the sub-pixel G that presents green light.

[0576] In photolithography, the finer the pattern being processed, the more important it is to ignore the effect of light diffraction. Therefore, when the pattern of the photomask is transferred by exposure, its fidelity deteriorates, and it is difficult to process the resist mask into a desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the sub-pixel is sometimes a polygonal shape with rounded corners, an ellipse, or a circle.

[0577] Furthermore, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the material of the organic compound layer and the curing temperature of the resist material, the curing of the resist film is sometimes insufficient. When the resist film is processed, the insufficiently cured shape sometimes takes on a shape that is far from the desired shape. As a result, the top surface shape of the organic compound layer sometimes takes on a polygonal shape with rounded corners, an ellipse, or a circle, etc. For example, when a resist mask having a square top surface shape is to be formed, a resist mask having a circular top surface shape is sometimes formed while the top surface shape of the organic compound layer is circular.

[0578] In order to make the top surface shape of the organic compound layer a desired shape, a technique (OPC (Optical Proximity Correction) technique) of pre-correcting the mask pattern in such a way that the design pattern and the transfer pattern are consistent can also be used. Specifically, in the OPC technique, for example, a correction pattern is added to the pattern corners on the mask pattern.

[0579] like FIG. 12A to FIG. 12I As shown, a pixel may include four types of sub-pixels.

[0580] FIG. 12A to FIG. 12C The pixels 178 are shown arranged in a stripe pattern.

[0581] Fig. 12A An example is shown in which each sub-pixel has a rectangular top surface shape. Fig. 12B An example is shown in which each sub-pixel has a top surface shape that connects two semicircles and a rectangle. Fig. 12C An example is shown in which each sub-pixel has an elliptical top surface shape.

[0582] FIG. 12D to FIG. 12F The pixels 178 are shown arranged in a matrix.

[0583] Fig.12D An example in which each sub-pixel has a square top surface shape is shown. Fig.12E An example is shown in which each sub-pixel has a top surface shape that is approximately square with rounded corners. Fig.12F An example is shown in which each sub-pixel has a circular top surface shape.

[0584] Figure 12G and Fig.12H An example is shown in which one pixel 178 is configured in two rows and three columns.

[0585] Figure 12G The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (first row) and one sub-pixel (sub-pixel 110W) in the lower row (second row). In other words, the pixel 178 includes sub-pixel 110R in the left column (first column), sub-pixel 110G in the center column (second column), sub-pixel 110B in the right column (third column), and sub-pixel 110W across the three columns.

[0586] Fig.12H The pixel 178 shown includes three sub-pixels (sub-pixel 110R, sub-pixel 110G, sub-pixel 110B) in the upper row (first row) and three sub-pixels 110W in the lower row (second row). In other words, the pixel 178 includes sub-pixel 110R and sub-pixel 110W in the left column (first column), sub-pixel 110G and sub-pixel 110W in the center column (second column), and sub-pixel 110B and sub-pixel 110W in the right column (third column). Fig.12H As shown, by making the arrangement of the sub-pixels of the upper and lower rows consistent, for example, dust that may be generated in the manufacturing process can be efficiently removed. Thus, a light-emitting device with high display quality can be provided.

[0587] exist Figure 12G and Fig.12H In the pixel 178 shown, the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B are arranged in a stripe pattern, so that the display quality can be improved.

[0588] Fig.12I An example is shown in which one pixel 178 is configured in three rows and two columns.

[0589] Fig.12IThe illustrated pixel 178 includes subpixel 110R in the upper row (first row), subpixel 110G in the middle row (second row), subpixel 110B across the first and second rows, and one subpixel (subpixel 110W) in the lower row (third row). In other words, pixel 178 includes subpixel 110R and subpixel 110G in the left column (first column), subpixel 110B in the right column (second column), and subpixel 110W across both columns.

[0590] exist Fig.12I In the pixel 178 shown, the layout of the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B is a so-called S-stripe arrangement, so that the display quality can be improved.

[0591] FIG. 12A to FIG. 12I The pixel 178 shown is composed of four sub-pixels, namely, a sub-pixel 110R, a sub-pixel 110G, a sub-pixel 110B, and a sub-pixel 110W. For example, the sub-pixel 110R may be set as a sub-pixel that presents red light, the sub-pixel 110G may be set as a sub-pixel that presents green light, the sub-pixel 110B may be set as a sub-pixel that presents blue light, and the sub-pixel 110W may be set as a sub-pixel that presents white light. In addition, at least one of the sub-pixel 110R, the sub-pixel 110G, the sub-pixel 110B, and the sub-pixel 110W may be set as a sub-pixel that presents cyan light, a sub-pixel that presents magenta light, a sub-pixel that presents yellow light, or a sub-pixel that presents near-infrared light.

[0592] As described above, in the light-emitting device of one embodiment of the present invention, various layouts can be adopted for pixels constituted by sub-pixels including a light-emitting device.

[0593] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0594] Implementation method 5 In this embodiment, a light-emitting device which is one embodiment of the present invention is described.

[0595] The light-emitting device of this embodiment can be a high-definition light-emitting device. Therefore, for example, the light-emitting device of this embodiment can be used as a display unit of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, and a display unit of wearable devices such as VR devices such as head-mounted displays (HMDs) and glasses-type AR devices that can be worn on the head.

[0596] In addition, the light-emitting device of this embodiment mode may be a high-resolution light-emitting device or a large light-emitting device. Therefore, for example, the light-emitting device of this embodiment mode may be used as a display portion of the following devices: electronic devices with large screens such as television devices, desktop or notebook personal computers, displays for computers, etc., digital signage and large-scale game machines such as pinball machines, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game machines; portable information terminals; and sound reproduction devices.

[0597] [Display module] Fig.13A 2 is a perspective view of a display module 280. The display module 280 includes a light emitting device 100A and an FPC 290. Note that the light emitting device included in the display module 280 is not limited to the light emitting device 100A, and may be either the light emitting device 100B or the light emitting device 100C described later.

[0598] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is an image display region in the display module 280, and light from each pixel provided in a pixel portion 284 described below can be viewed.

[0599] Fig. 13B 2 is a perspective view of a structure on one side of a substrate 291. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. In addition, a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 is electrically connected to the circuit portion 282 via a wiring portion 286 composed of a plurality of wirings.

[0600] The pixel portion 284 includes a plurality of pixels 284 a arranged periodically. Fig. 13B An enlarged view of one pixel 284a is shown on the right side of FIG. The pixel 284a can adopt the various structures described in the above embodiment.

[0601] The pixel circuit portion 283 includes a plurality of pixel circuits 283 a arranged periodically.

[0602] One pixel circuit 283a controls the driving of multiple devices included in one pixel 284a. Three circuits for controlling the light emission of one light emitting device may be provided in one pixel circuit 283a. For example, the pixel circuit 283a may adopt a structure having at least one selection transistor, one current control transistor (driving transistor) and a capacitor for one light emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. Thus, an active matrix light emitting device is realized.

[0603] The circuit unit 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit unit 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may include at least one of a calculation circuit, a storage circuit, and a power supply circuit.

[0604] The FPC 290 is used as wiring for supplying video signals, power supply potential, and the like from the outside to the circuit portion 282. Alternatively, an IC may be mounted on the FPC 290.

[0605] The display module 280 can adopt a structure in which one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked on the lower side of the pixel unit 284, so that the display unit 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, thereby making the display unit 281 have an extremely high definition. For example, the display unit 281 preferably arranges the pixels 284a with a definition of 2000ppi or more, more preferably 3000ppi or more, more preferably 5000ppi or more, and more preferably 6000ppi or more and 20000ppi or less or 30000ppi or less.

[0606] This display module 280 has extremely high definition, so it can be applied to VR devices such as HMD or glasses-type AR devices. For example, because the display module 280 has an extremely high-definition display unit 281, in the structure of viewing the display unit of the display module 280 through a lens, even if the display unit is magnified by a lens, the user cannot see the pixels, thereby achieving a highly immersive display. In addition, the display module 280 can also be applied to electronic devices with relatively small display units. For example, it can be applied to the display unit of wearable electronic devices such as watch-type devices.

[0607] [Light-emitting device 100A] Fig.14A The light emitting device 100A shown includes a substrate 301 , a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240 , and a transistor 310 .

[0608] Substrate 301 is equivalent to Fig.13A and Fig. 13BThe transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a portion of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313 and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low resistance region 312 is a region doped with impurities in the substrate 301 and is used as a source or a drain. The insulating layer 314 covers the side of the conductive layer 311.

[0609] Furthermore, an element (device) separation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0610] In addition, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0611] Capacitor 240 includes conductive layer 241, conductive layer 245, and insulating layer 243 therebetween. Conductive layer 241 serves as one electrode in capacitor 240, conductive layer 245 serves as the other electrode in capacitor 240, and insulating layer 243 serves as a dielectric of capacitor 240.

[0612] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through the plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided in a manner covering the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 via the insulating layer 243.

[0613] An insulating layer 255 is provided in a manner covering the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B are provided on the insulating layer 175. An insulating material is provided in the region between adjacent light emitting devices. For example, Fig.14A In the embodiment, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in the region.

[0614] The insulating layer 156R is provided so as to have a region overlapping with the side surface of the conductive layer 151R included in the light emitting device 130R, the insulating layer 156G is provided so as to have a region overlapping with the side surface of the conductive layer 151G included in the light emitting device 130G, and the insulating layer 156B is provided so as to have a region overlapping with the side surface of the conductive layer 151B included in the light emitting device 130B. In addition, the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, the conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and the conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. Furthermore, the sacrificial layer 158R is located on the organic compound layer 103R included in the light emitting device 130R, the sacrificial layer 158G is located on the organic compound layer 103G included in the light emitting device 130G, and the sacrificial layer 158B is located on the organic compound layer 103B included in the light emitting device 130B.

[0615] Conductive layer 151R, conductive layer 151G, and conductive layer 151B are electrically connected to one of the source and drain of transistor 310 via plug 256 embedded in insulating layer 243, insulating layer 255, insulating layer 174, and insulating layer 175, conductive layer 241 embedded in insulating layer 254, and plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 175 is equal to or substantially equal to the height of the top surface of plug 256. Various conductive materials can be used for the plug.

[0616] In addition, a protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. The substrate 120 is bonded to the protective layer 131 via a resin layer 122. The details of the components of the light emitting device 130 to the substrate 120 can be referred to Embodiment 2. The substrate 120 corresponds to Fig.13A substrate 292.

[0617] Fig. 14B Show Fig.14A A modified example of the light emitting device 100A is shown. Fig. 14B The light emitting device shown includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light emitting device 130 has a region overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. Fig. 14B In the light emitting device shown, the light emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively.

[0618] [Light-emitting device 100B] Fig.15 A perspective view showing a light emitting device 100B is shown. Fig.16A A cross-sectional view of the light emitting device 100B is shown.

[0619] The light emitting device 100B has a structure in which a substrate 352 and a substrate 351 are bonded together. Fig.15 In FIG. 3 , the substrate 352 is indicated by a dotted line.

[0620] The light-emitting device 100B includes a pixel portion 177 , a connection portion 140 , a circuit 356 , a wiring 355 , and the like. Fig.15 FIG. 1 shows an example in which the light emitting device 100B is mounted with IC 354 and FPC 353. Fig.15 The structure shown is called a display module including the light emitting device 100B, IC (integrated circuit) and FPC. Here, the substrate of the light emitting device with a connector such as FPC mounted thereon or the substrate with IC mounted thereon is called a display module.

[0621] The connection portion 140 is disposed outside the pixel portion 177. The connection portion 140 may be disposed along one side or multiple sides of the pixel portion 177. The number of the connection portions 140 may also be one or more. Fig.15 The example in which the connection portion 140 is provided so as to surround four sides of the pixel portion 177 is shown. At the connection portion 140, the common electrode of the light emitting device is electrically connected to the conductive layer, and a potential can be supplied to the common electrode.

[0622] As the circuit 356, for example, a scan line driver circuit can be used.

[0623] The wiring 355 has a function of supplying a signal and power to the pixel portion 177 and the circuit 356. The signal and power are input to the wiring 355 from the outside through the FPC 353 or are input to the wiring 355 from the IC 354.

[0624] Fig.15 An example of providing IC354 on substrate 351 by COG (Chip On Glass) method or COF (Chip On Film) method is shown. As IC354, for example, an IC including a scanning line driving circuit or a signal line driving circuit can be used. Note that the light emitting device 100B and the display module do not necessarily have to be provided with an IC. In addition, for example, the IC can also be mounted on an FPC by using a COF method.

[0625] Fig.16A An example of a cross section of a part of a region including the FPC 353 , a part of the circuit 356 , a part of the pixel portion 177 , a part of the connection portion 140 , and a part of a region including an end portion of the light emitting device 100B is shown.

[0626] Fig.16AThe light emitting device 100B shown includes a transistor 201 , a transistor 205 , a light emitting device 130R emitting red light, a light emitting device 130G emitting green light, a light emitting device 130B emitting blue light, and the like between a substrate 351 and a substrate 352 .

[0627] The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B all have the same structure except that the structure of the pixel electrode is different. Fig. 6A The details of the light emitting device can refer to the above embodiments.

[0628] The light emitting device 130R includes a conductive layer 224R, a conductive layer 151R on the conductive layer 224R, and a conductive layer 152R on the conductive layer 151R. The light emitting device 130G includes a conductive layer 224G, a conductive layer 151G on the conductive layer 224G, and a conductive layer 152G on the conductive layer 151G. The light emitting device 130B includes a conductive layer 224B, a conductive layer 151B on the conductive layer 224B, and a conductive layer 152B on the conductive layer 151B. Here, the conductive layer 224R, the conductive layer 151R, and the conductive layer 152R may be collectively referred to as a pixel electrode of the light emitting device 130R, and the conductive layer 151R and the conductive layer 152R other than the conductive layer 224R may also be referred to as a pixel electrode of the light emitting device 130R. Similarly, the conductive layer 224G, the conductive layer 151G, and the conductive layer 152G may be collectively referred to as the pixel electrode of the light-emitting device 130G, and the conductive layer 151G and the conductive layer 152G other than the conductive layer 224G may also be referred to as the pixel electrode of the light-emitting device 130G. In addition, the conductive layer 224B, the conductive layer 151B, and the conductive layer 152B may be collectively referred to as the pixel electrode of the light-emitting device 130B, and the conductive layer 151B and the conductive layer 152B other than the conductive layer 224B may also be referred to as the pixel electrode of the light-emitting device 130B.

[0629] The conductive layer 224R is connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. The insulating layer 156R is provided so as to have a region in contact with the side surface of the conductive layer 151R, and the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R.

[0630] The conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in the light-emitting device 130G and the conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in the light-emitting device 130B are the same as the conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in the light-emitting device 130R, so detailed description is omitted.

[0631] Concave portions are formed in conductive layer 224R, conductive layer 224G, and conductive layer 224B so as to cover the openings provided in insulating layer 214. Layer 128 is embedded in the concave portions.

[0632] The layer 128 has the function of flattening the concave portions of the conductive layers 224R, 224G, and 224B. The conductive layers 151R, 151G, and 151B electrically connected to the conductive layers 224R, 224G, and 224B are provided on the conductive layers 224R, 224G, and 224B, and the layer 128. Therefore, the region overlapping the concave portions of the conductive layers 224R, 224G, and 224B can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0633] Layer 128 may be an insulating layer or a conductive layer. Layer 128 may be formed of various inorganic insulating materials, organic insulating materials, and conductive materials as appropriate. In particular, layer 128 is preferably formed of an insulating material, and is particularly preferably formed of an organic insulating material. Layer 128 may be formed of, for example, the organic insulating material that can be used for insulating layer 127.

[0634] A protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G and the light emitting device 130B. The protective layer 131 and the substrate 352 are bonded by an adhesive layer 142. The substrate 352 is provided with a light shielding layer 157. The sealing of the light emitting device 130 may adopt a solid sealing structure or a hollow sealing structure. Fig.16A In the embodiment, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, that is, a solid sealing structure is adopted. Alternatively, an inert gas (nitrogen or argon, etc.) can be used to fill the space and a hollow sealing structure can be adopted. In this case, the adhesive layer 142 can also be set in a manner that does not overlap with the light-emitting device. In addition, a resin different from the adhesive layer 142 set in a frame shape can also be used to fill the space.

[0635] Fig.16A The following example is shown: the connection portion 140 includes a conductive layer 224C processed from the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C processed from the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C processed from the same conductive film as the conductive layers 152R, 152G, and 152B. In addition, Fig.16A An example is shown in which the insulating layer 156C is provided so as to have a region overlapping with the side surface of the conductive layer 151C.

[0636] The light emitting device 100B is a top emission type display device. The light emitting device emits light to the substrate 352 side. The substrate 352 is preferably made of a material with high visible light transmittance. The pixel electrode includes a material that reflects visible light, and the counter electrode (common electrode 155) includes a material that transmits visible light.

[0637] The transistor 201 and the transistor 205 are both formed over a substrate 351. These transistors can be formed using the same material and the same process.

[0638] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 351. A portion of the insulating layer 211 is used as a gate insulating layer of each transistor. A portion of the insulating layer 213 is used as a gate insulating layer of each transistor. The insulating layer 215 is provided in a manner covering the transistor. The insulating layer 214 is provided in a manner covering the transistor and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor, and it can be one or more than two.

[0639] Preferably, a material that is not easy to diffuse impurities such as water and hydrogen is used for at least one of the insulating layers covering the transistor. Thus, the insulating layer can be used as a barrier layer. By adopting this structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistor, thereby improving the reliability of the light-emitting device.

[0640] Inorganic insulating films are preferably used as the insulating layer 211, the insulating layer 213, and the insulating layer 215. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used. In addition, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can also be used. In addition, two or more of the above insulating films can also be stacked.

[0641] The insulating layer 214 used as a planarization layer preferably uses an organic insulating layer. As materials that can be used for the organic insulating layer, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenolic resin and precursors of the above resins can be cited. In addition, the insulating layer 214 may also have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 is preferably used as an etching protection layer. Thus, when processing the conductive layer 224R, the conductive layer 151R or the conductive layer 152R, etc., it is possible to suppress the formation of a recess in the insulating layer 214. Alternatively, a recess may be provided in the insulating layer 214 when processing the conductive layer 224R, the conductive layer 151R or the conductive layer 152R, etc.

[0642] The transistor 201 and the transistor 205 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a gate insulating layer; a conductive layer 222a and a conductive layer 222b used as a source and a drain; a semiconductor layer 231; an insulating layer 213 used as a gate insulating layer; and a conductive layer 223 used as a gate. Here, a plurality of layers obtained by processing the same conductive film are represented by the same hatching. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0643] There is no particular restriction on the transistor structure included in the light-emitting device of this embodiment. For example, a planar transistor, a staggered transistor, or an inversely staggered transistor may be used. In addition, the transistor may have a top gate structure or a bottom gate structure. Alternatively, a gate may be provided above and below the semiconductor layer forming the channel.

[0644] As transistor 201 and transistor 205, a structure in which a semiconductor layer forming a channel is sandwiched between two gates is adopted. Alternatively, two gates may be connected and the transistor may be driven by supplying the same signal to the two gates. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0645] There is no particular restriction on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. When a crystalline semiconductor is used, it is preferred because it can suppress the degradation of the characteristics of the transistor.

[0646] A metal oxide is preferably used for the semiconductor layer of the transistor. That is, the light-emitting device of this embodiment preferably uses a transistor including a metal oxide in a channel formation region (hereinafter referred to as an OS transistor).

[0647] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0648] Alternatively, a transistor (Si transistor) using silicon for the channel formation region may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, or amorphous silicon. In particular, a transistor (hereinafter referred to as an LTPS transistor) containing low temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer may be used. The LTPS transistor has high field effect mobility and good frequency characteristics.

[0649] By using Si transistors such as LTPS transistors, a circuit that needs to be driven at a high frequency (e.g., a source driver circuit) and a display unit can be formed on the same substrate. Therefore, the external circuit mounted on the light-emitting device can be simplified, and the component cost and mounting cost can be reduced.

[0650] The field effect mobility of the OS transistor is much higher than that of amorphous silicon transistors. In addition, the leakage current between the source and the drain of the OS transistor in the off state (hereinafter also referred to as the off-state current) is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. In addition, by using the OS transistor, the power consumption of the light-emitting device can be reduced.

[0651] In addition, when the luminance of the light-emitting device included in the pixel circuit is increased, it is necessary to increase the amount of current flowing through the light-emitting device. To this end, it is necessary to increase the source-drain voltage of the driving transistor included in the pixel circuit. Because the source-drain withstand voltage of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased to improve the luminance of the light-emitting device.

[0652] In addition, when the transistor operates in the saturation region, the OS transistor can make the change in the source-drain current with the change in the gate-source voltage smaller than the Si transistor. Therefore, by using the OS transistor as the driving transistor included in the pixel circuit, the current flowing through the source-drain can be determined in detail according to the change in the gate-source voltage, so the amount of current flowing through the light-emitting device can be controlled. As a result, the grayscale represented by the pixel circuit can be increased.

[0653] In addition, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, compared with the Si transistor, the OS transistor can make a stable current (saturation current) flow even if the source-drain voltage is gradually increased. Therefore, by using the OS transistor as a driving transistor, even if, for example, the current-voltage characteristics of the light-emitting d...

Claims

1. An organic compound represented by the general formula (G2), in, X represents a sulfur atom or an oxygen atom, R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And, n represents an integer of 1 to 4.

2. An organic compound represented by the general formula (G3), in, X represents a sulfur atom or an oxygen atom, R 6 To R 17 , R 20 To R 26 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And, n represents an integer of 1 to 4.

3. The organic compound according to claim 1, wherein the organic compound is represented by the general formula (G4), X represents a sulfur atom or an oxygen atom, R 1 , R 2 , R 6 To R 9 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And n represents an integer of 1 to 4.

4. The organic compound according to claim 2, wherein the organic compound is represented by the general formula (G5), X represents a sulfur atom or an oxygen atom, R 6 To R 17 , R 30 To R 34 , R 40 To R 43 , R 103 To R 105 , R 135 and R 136 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And n represents an integer of 1 to 4.

5. The organic compound according to claim 1, wherein the organic compound is represented by the general formula (G6), X represents a sulfur atom or an oxygen atom, R 1 , R 2 and R 40 To R 43 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 34 , R 135 and R 136 represents hydrogen, And n represents an integer of 1 to 4.

6. The organic compound according to claim 2, wherein the organic compound is represented by the general formula (G7), X represents a sulfur atom or an oxygen atom, R 6 To R 17 , R 40 To R 43 and R 103 To R 105 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 34 , R 135 and R 136 represents hydrogen, And n represents an integer of 1 to 4.

7. An organic compound represented by the general formula (G8), in, X represents a sulfur atom or an oxygen atom, R 1 , R 2 , R 6 To R 9 , R 20 To R 26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And, n represents an integer of 1 to 4.

8. An organic compound represented by the general formula (G9), in, X represents a sulfur atom or an oxygen atom, R 6 To R 17 , R 20 To R 26 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And, n represents an integer of 1 to 4.

9. The organic compound according to claim 7, wherein the organic compound is represented by the general formula (G10), X represents a sulfur atom or an oxygen atom, R 1 , R 2 , R 6 To R 9 , R 30 To R 36 , R 40 To R 43 and R 104 To R 106 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And n represents an integer of 1 to 4.

10. The organic compound according to claim 7, wherein the organic compound is represented by the general formula (G11), X represents a sulfur atom or an oxygen atom, R 1 , R 2 and R 40 To R 43 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, And n represents an integer of 1 to 4.

11. A light emitting device comprising the organic compound according to claim 1.

12. A light emitting device comprising the organic compound according to claim 2.

13. A light emitting device comprising the organic compound according to claim 7.

14. A light emitting device comprising the organic compound according to claim 8.

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