Preparation method of ultraviolet high cut-off film

Abstract

The invention discloses a preparation method of an ultraviolet high cut-off film, and relates to the technical field of solar cells. Silica sol is used as a carrier, is combined with a precursor of an ultraviolet high-cut-off material and is uniformly coated on the surface of glass, then a light-conversion high-cut-off film layer structure is prepared in situ through co-firing, ultraviolet light can be efficiently absorbed and converted into visible light, efficient cut-off of the ultraviolet light is achieved, the transmittance of the ultraviolet light is reduced, and the service life of the ultraviolet light is prolonged. The power of the photovoltaic module is improved, and the photovoltaic module can be widely applied to the surface of photovoltaic glass; compared with an original sheet, the prepared glass film layer can efficiently cut off ultraviolet light, meanwhile, the ultraviolet light can be converted into 400-800 nm light with the highest battery utilization efficiency, the problem of ultraviolet attenuation of a solar battery is solved, the glass film layer is applied to a photovoltaic module, and the effect of improving the power of the module can be achieved.

Description

Technical Field

[0001] The invention relates to the technical field of solar cells, and in particular to a method for preparing an ultraviolet high cutoff film. Background Art

[0002] As global environmental energy issues become increasingly prominent, heterojunction solar cells have shown high conversion efficiency, high bifaciality, no PID\LID problems, low temperature coefficient, high open circuit voltage and other characteristics, and are expected to become innovators in the field of energy conversion in the future. However, when high-energy ultraviolet light irradiates the amorphous silicon layer of heterojunction solar cells, a large number of dangling bonds will be generated, destroying the passivation effect of amorphous silicon, and some Si-H bonds will break under ultraviolet irradiation, and the Si-H content will decrease, affecting the passivation performance of the heterojunction. The electrical performance is manifested in the decrease of Voc and FF. How to improve the ultraviolet attenuation of heterojunction solar cells is still the most concerned issue in academia and industry. In addition, in future development, ultraviolet high cutoff materials will also play an increasingly important role in perovskite solar cells.

[0003] High-energy ultraviolet light in sunlight not only causes photon waste, but also leads to the attenuation of battery performance and the aging of polymer packaging materials (such as backplane). The use of ultraviolet high-cutoff film can convert high-energy ultraviolet light into medium- and long-wavelength light with higher utilization rate in crystalline silicon solar cells. It can not only greatly improve the photoelectric conversion efficiency of the battery, but also minimize the impact of ultraviolet light on component performance and packaging material reliability.

[0004] At present, there are many ways to improve the ultraviolet attenuation of heterojunction solar cells: (i) directly coating the down-conversion material and high ultraviolet absorption material on the surface of the cell; (ii) combining the down-conversion material and ultraviolet high absorption material with EVA and other component polymer packaging materials to form a light conversion layer; (iii) directly coating the down-conversion material and ultraviolet high absorption material on glass to form a light conversion layer. However, these methods have not made any substantial progress in the actual application of photovoltaic cells and components. The main reasons are analyzed. First, most of the manufactured materials are mainly particles, which are directly placed on the surface of the cell, which will inevitably cause the negative impact of shading. Second, the outermost glass has a certain absorption of ultraviolet light after the cell is encapsulated, which restricts the efficiency of the light conversion material. Third, in the manufacturing process, the above methods all have the exception of manufacturing nanoparticles, which are then dispersed in EVA, glass on the cell, etc., which is not only costly, but also cannot guarantee the dispersion. Fourth, simply using down-conversion materials or ultraviolet high absorption materials has a single effect and cannot cause efficient cutoff of ultraviolet light.

[0005] In view of the above problems, the present invention proposes a method for preparing an ultraviolet high cut-off film. Summary of the invention

[0006] The purpose of the present invention is to provide a method for preparing a high-ultraviolet cutoff film to solve the problems raised in the above-mentioned background technology. When photovoltaic glass coated with the high-ultraviolet cutoff film is used to prepare solar cells, the high-efficiency cutoff of ultraviolet light of solar cells can be improved.

[0007] To achieve the above object, the present invention provides a method for preparing a UV high cut-off film, comprising the following steps:

[0008] S1. preparing down-conversion materials;

[0009] S2, preparing ultraviolet high absorption material;

[0010] S3, preparing a UV high cutoff material precursor by using a down conversion material and a UV high absorption material;

[0011] S4, preparing silica sol;

[0012] S5. Mix the silica sol material and the ultraviolet high cutoff material precursor, apply the mixed solution on the surface of the photovoltaic glass, and solidify and sinter to obtain an ultraviolet high cutoff film.

[0013] Preferably, the S1 specifically comprises the following steps:

[0014] S1-1, weigh a certain amount of rare earth metal oxide and sensitizer, add them to a strong acid and stir to dissolve, then add a metal chelating agent, and continue stirring to obtain solution A;

[0015] S1-2, weigh a certain amount of rare earth metal oxide and add it into a strong acid to dissolve to obtain solution B;

[0016] S1-3. Solution A and solution B are fully mixed. During the mixing process, ammonium salt and alkali are added. After the reaction is completed, the solution is cooled to room temperature.

[0017] Preferably, in S1-1, the mass ratio between the rare earth metal oxide and the sensitizer is 1-3:2-6;

[0018] In S1-2, the mass ratio of the rare earth metal oxide to the strong acid is 1-3:2-6;

[0019] In S1-3, the volume ratio of solution A to solution B is 1-3:2-6.

[0020] Preferably, the specific steps of S2 are as follows: weigh a certain amount of metal oxide, add it to a strong acid to fully dissolve it, then add an organic solvent to stir the reaction, and add a metal chelator after the reaction is completed, wherein the mass ratio of the metal oxide to the strong acid is 1-3:1-6g, and the mass ratio of the organic solvent to the metal chelator is 1-10:1-3.

[0021] Preferably, in S3, the volume ratio of the down conversion material and the ultraviolet high absorption material for preparing the high cutoff material precursor is 1-3:2-6.

[0022] Preferably, the specific steps of S4 are as follows: take a certain amount of tetraethyl orthosilicate, anhydrous ethanol and deionized water, mix them, adjust the pH value to 4-5 with citric acid, stir at room temperature for 1 hour, continue to add anhydrous ethanol, and age for 48 hours to obtain silica sol, wherein the mass ratio of tetraethyl orthosilicate to anhydrous ethanol and deionized water is 1-3:1-20:1-5.

[0023] Preferably, in S5, the mass ratio of the silica sol material to the ultraviolet high cutoff material precursor is 1-10:1-20;

[0024] The curing temperature is 90℃-300℃, and the curing time is 30s-5min; the sintering temperature is 500℃-1200℃, and the sintering time is 80s-150s;

[0025] The thickness of the prepared ultraviolet high cut-off film is 20nm-1000nm.

[0026] Preferably, in S1, the rare earth metal oxide is one or more of yttrium oxide, europium oxide, lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, gadolinium oxide, thulium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, and lutetium oxide;

[0027] The sensitizer is one or more of calcium oxide, lead sulfide, iron disulfide, bismuth oxide, barium oxide, zinc oxide, and magnesium oxide;

[0028] The ammonium salt includes one or more of ammonium chloride, ammonium bicarbonate, and ammonium metavanadate;

[0029] The alkali is one or more of sodium hydroxide, potassium hydroxide, calcium hydroxide, copper hydroxide, and iron hydroxide.

[0030] Preferably, in S2, the metal oxide is one or more of bismuth oxide, barium oxide, calcium oxide, zinc oxide, titanium dioxide, iron oxide, cerium oxide, cuprous oxide, magnesium oxide, and manganese dioxide;

[0031] The organic solvent is one or more of methanol, anhydrous ethanol, acetone, n-butanol, isopropanol, ethyl acetate, ether, chloroform, dichloromethane and petroleum ether.

[0032] Preferably, in S1 and S2, the strong acid is one or more of nitric acid, hydrochloric acid, and sulfuric acid; the metal chelating agent is one or more of acetic acid, urea, urea, phosphoric acid, citric acid, ethylenediaminetetraacetic acid and its derivatives, tetrasodium glutamate diacetate, and dithiocarbamate derivatives.

[0033] Therefore, the present invention provides a method for preparing a UV high cut-off film, and the specific beneficial effects are as follows:

[0034] (1) The present invention uses silica sol as a carrier, combines it with a precursor of a UV high cutoff material, and uniformly coats it on the glass surface. Then, a film layer structure with a light-converting high cutoff is prepared in situ by co-firing, which efficiently absorbs UV light and converts it into visible light, thereby achieving efficient cutoff of UV light, reducing the transmittance of UV light and improving the power of photovoltaic modules. The present invention can be widely used on the surface of photovoltaic glass.

[0035] (2) Compared with the original glass film, the glass film layer prepared by the present invention can efficiently cut off ultraviolet light and convert ultraviolet light into light of about 400-800nm ​​with the highest battery utilization efficiency. It not only solves the ultraviolet attenuation problem of solar cells, but also can improve the power of photovoltaic modules when applied to photovoltaic modules.

[0036] (3) The preparation method of the present invention is simple and low-cost, and is expected to be widely used in the photovoltaic industry.

[0037] (4) The ultraviolet high cutoff film prepared by the present invention is suitable for a variety of solar cells, such as emitter back passivation cells, tunnel oxide layer passivation contact solar cells, silicon heterojunction solar cells, perovskite solar cells, etc. The structural schematic diagram is shown in FIG. Figure 7 shown.

[0038] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 The transmission curves of the glass and the original sheet of Comparative Example 1 and Example 1 of the present invention;

[0040] Figure 2 The transmission curves of the glass and the original sheet of Comparative Example 2 and Example 1 of the present invention;

[0041] Figure 3 The transmission curves of the glass and the original sheet of comparative example 3 and embodiment 1 of the present invention;

[0042] Figure 4 The transmission curves of the glass and the original sheet of comparative example 4 and embodiment 1 of the present invention;

[0043] Figure 5 The excitation spectrum monitored at 615nm and 526nm in the embodiment of the present invention;

[0044] Figure 6 The emission spectra monitored at 250nm and 275nm for the embodiments of the present invention;

[0045] Figure 7 This is a structural diagram of the ultraviolet high cut-off film prepared by the present invention being applied to a solar cell. DETAILED DESCRIPTION

[0046] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not used to limit the scope of the present invention. Any other changes, modifications, substitutions, combinations, and simplifications made without violating the spirit and principle of the present invention should all be equivalent replacement methods and are included in the protection scope of the present invention. In addition, it should be understood that after reading the content of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the claims attached to this application, and all belong to the scope of protection of the present invention.

[0047] Reference to "embodiment" herein means that the specific features, structures or characteristics described in conjunction with the embodiment may be included in at least one embodiment of the present application. The term "embodiment" appearing in various places in the specification does not necessarily refer to the same embodiment, nor does it particularly limit its independence or association with other embodiments. In principle, in the present application, as long as there is no technical contradiction or conflict, the various technical features mentioned in the embodiments can be combined in any way to form a corresponding implementable technical solution.

[0048] Unless otherwise defined, the technical terms used in this document have the same meanings as those generally understood by those skilled in the art to which this application belongs; the use of relevant terms in this document is only for describing specific embodiments and is not intended to limit this application.

[0049] Unless otherwise specified in the present invention, the reagents, instruments, and equipment used are those commonly used by technicians in this field.

[0050] Use 4.5cm×9cm, 3.2mm thick ultra-white glass original sheet, after ultrasonic cleaning as photovoltaic glass substrate, dip coating for 30s to form a film layer. When high-temperature curing, first heat the oven from room temperature to the curing temperature. When calcining, heat the sintering furnace from room temperature to the calcining temperature, then put the coated glass in and start calcining.

[0051] Embodiment 1

[0052] This embodiment provides a method for preparing an ultraviolet high cut-off film, comprising the following steps:

[0053] S1. Preparation of down-conversion material: Weigh 1.6 g of bismuth oxide and 0.42 g of europium oxide, and then dissolve them in 400 g of deionized water containing 10 g of concentrated nitric acid with a mass fraction of 65%-68%, and stir for 1 hour until the metal oxides are completely dissolved. After the solution becomes transparent, add 4.6 g of citric acid and continue stirring for 10 minutes to obtain solution A;

[0054] Take 4.30 g of yttrium oxide and fully dissolve it in dilute nitric acid (10 g of concentrated nitric acid with a mass fraction of 65%-68%, 400 g of deionized water). The color changes from milky white to white and finally becomes transparent to obtain solution B;

[0055] After the two solutions were mixed, they were stirred at 50°C for 10 minutes. 2.8 g of ammonium metavanadate and sodium hydroxide (adjusted to pH 3) were gradually introduced, and the color of the solution turned blue. Finally, the solution was slowly cooled to room temperature to form a down-conversion material solution;

[0056] S2. Preparation of ultraviolet high absorption material: accurately weigh 16g of zinc oxide, place it in dilute nitric acid (10g of concentrated nitric acid with a mass fraction of 65%-68%, 100g of deionized water) to fully dissolve, then add 300g of ethanol and stir magnetically. After the reaction is complete, add 38.42g of citric acid to form an ultraviolet high absorption material solution;

[0057] S3, preparing a UV high cutoff material precursor: mixing 100 g of a down-conversion material and 100 g of a UV high absorption material solution to obtain a UV high cutoff material precursor solution;

[0058] S4, preparing silica sol: first, 20g of ethyl orthosilicate, 200g of ethanol and 50g of deionized water were mixed and hydrolyzed, the pH value was adjusted to 4-5 with citric acid, stirred at room temperature for 1h, and 50g of anhydrous ethanol was added, and the silica sol was obtained after aging for 48h.

[0059] S5. Preparation of ultraviolet high cutoff film: first use the dip coating method to ultrasonically vibrate the photovoltaic glass with alkaline solution for 20 minutes in advance, then rinse it with ethanol and deionized water, mix 20g of silica sol material and 120g of ultraviolet high cutoff material precursor, apply the mixed solution on the photovoltaic glass substrate, and then place it in a high-temperature furnace, cure it at 150°C for 3min, and calcine it at 700°C for 110s to obtain an ultraviolet high cutoff film on the glass surface.

[0060] Comparative Example 1

[0061] S1. 34 g of tetrabutyl titanate, 10 g of 6 mol / L hydrochloric acid, and 60 g of anhydrous ethanol were fully mixed at room temperature, placed on a magnetic stirrer and stirred for 1 h, and then 200 g of anhydrous ethanol was added and stirred for 20 min. After stirring, the mixture was sealed and aged for 24 h to obtain a titanium dioxide sol.

[0062] S2. 20 g of ethyl orthosilicate, 200 g of ethanol and 50 g of deionized water were mixed and hydrolyzed. The pH value was adjusted to 4-5 with citric acid, and then stirred at room temperature for 1 h. 50 g of anhydrous ethanol was added, and the mixture was aged for 48 h to obtain a silica sol.

[0063] S3. Use dip coating to ultrasonically vibrate the photovoltaic glass with alkaline solution for 20 minutes in advance, and then rinse it with ethanol and deionized water. Mix 10g of silica sol and 100g of titanium dioxide sol in a suitable mass ratio of 0.1:1, and then coat the mixed solution on the photovoltaic glass substrate, and then place it in a high-temperature furnace, high-temperature cure at 150°C for 3 minutes, and calcine at 700°C for 110 seconds to obtain a UV cutoff film on the glass surface.

[0064] Comparative Example 2

[0065] S1. Weigh 10 g of cerium chloride and fully dissolve it in 100 g of anhydrous ethanol, then drop 3 ml of acetylacetone, stir well for 2 h, and age for 2 days to obtain a cerium oxide solution.

[0066] S2. 20 g of ethyl orthosilicate, 200 g of ethanol and 50 g of deionized water were mixed and hydrolyzed. The pH value was adjusted to 4-5 with citric acid, and then stirred at room temperature for 1 h. 50 g of anhydrous ethanol was added, and the mixture was aged for 48 h to obtain a silica sol.

[0067] S3. Use dip coating to ultrasonically vibrate the photovoltaic glass with alkaline solution for 20 minutes in advance, and then rinse it with ethanol and deionized water. Mix 10g of silica sol and 100g of cerium oxide, apply the solution on the photovoltaic glass substrate, and then place it in a high-temperature furnace, cure it at 150°C for 3 minutes, and calcine it at 700°C for 110 seconds to obtain a UV cutoff film on the glass surface.

[0068] Comparative Example 3

[0069] S1. Accurately weigh 16g of zinc oxide and place it in dilute nitric acid (10g of concentrated nitric acid with a mass fraction of 65%-68%, 100g of deionized water) to fully dissolve, then add 300g of ethanol and stir magnetically. After the reaction is complete, add 38.42g of citric acid to form a zinc oxide mixed solution.

[0070] S2. 20 g of ethyl orthosilicate, 200 g of ethanol and 50 g of deionized water were mixed and hydrolyzed. The pH value was adjusted to 4-5 with citric acid, and then stirred at room temperature for 1 h. 50 g of anhydrous ethanol was added, and the mixture was aged for 48 h to obtain a silica sol.

[0071] S3. Use the dip coating method to ultrasonically vibrate the photovoltaic glass with alkaline solution for 20 minutes in advance, then rinse it with ethanol and deionized water, mix 10g of silica sol and 100g of zinc oxide, and then coat the solution on the photovoltaic glass substrate. Curing it at 150°C for 3 minutes, and then calcining it at 700°C in a high-temperature furnace for 110 seconds to obtain a UV cutoff film on the glass surface.

[0072] Comparative Example 4

[0073] S1. Preparation of down-conversion material: Weigh 1.6 g of bismuth oxide and 0.42 g of europium oxide, and then dissolve them in 400 g of deionized water containing 10 g of 65%-68% concentrated nitric acid, and stir for 1 hour until the metal oxides are completely dissolved. After the solution becomes transparent, add 4.6 g of citric acid and continue stirring for 10 minutes;

[0074] Take 4.30 g of yttrium oxide and fully dissolve it with dilute nitric acid (10 g of concentrated nitric acid with a mass fraction of 65%-68%, 400 g of deionized water). The color changes from milky white to white and finally becomes transparent.

[0075] After the two solutions were mixed, they were stirred at 50° C. for 10 minutes, and 2.8 g of ammonium metavanadate and sodium hydroxide (adjusted to pH 3) were gradually introduced, and the color of the solution changed. Finally, the solution was slowly cooled to room temperature to form a down-conversion material solution.

[0076] S2. 20 g of ethyl orthosilicate, 200 g of ethanol and 50 g of deionized water were mixed and hydrolyzed. The pH value was adjusted to 4-5 with citric acid, and then stirred at room temperature for 1 h. 50 g of anhydrous ethanol was added, and the mixture was aged for 48 h to obtain a silica sol.

[0077] S3. Use dip coating to ultrasonically vibrate the photovoltaic glass with alkaline solution for 20 minutes in advance, then rinse it with ethanol and deionized water, mix 20g of silica sol and 120g of down-conversion material solution, apply the solution on the photovoltaic glass substrate, cure it at 150°C for 3 minutes, and then place it in a high-temperature furnace at 700°C for calcination for 110 seconds to obtain a UV cutoff film on the glass surface.

[0078] The transmission curve comparison diagrams of the original glass and the glass with UV cut-off film prepared in Example 1, Comparative Example 1, Comparative Example 2, Comparative Example 3 and Comparative Example 4 are shown in FIG. Figure 1-4 shown.

[0079] Depend on Figure 1 It can be seen that, compared with the original film, the introduction of zinc oxide and down-conversion materials leads to a strong absorption of ultraviolet light in Example 1, while at the same time the long-wave transmittance is much greater than that in Comparative Example 1.

[0080] Depend on Figure 2 It can be seen that, in the case of ensuring that the long-wave transmittance is not reduced, the ultraviolet light cutoff rate of Example 1 is higher than that of Comparative Example 2.

[0081] Depend on Figure 3 It can be seen that the ultraviolet light cutoff rate of Example 1 is substantially equal to that of Comparative Example 3, indicating that the introduction of the down-conversion material does not significantly change the basic properties of zinc oxide, while increasing the light conversion effect.

[0082] Depend on Figure 4 It can be seen that the addition of zinc oxide greatly increases the film's absorption of ultraviolet light, thereby inhibiting the power attenuation of heterojunction solar cells.

[0083] The average transmittance of the original glass and the glasses of Comparative Examples 1, 2, 3, 4 and Example 1 in different wavelength bands is shown in Table 1.

[0084] Table 1

[0085]

[0086] It can be seen from Table 1 that the cutoff efficiency of ultraviolet light is the highest while ensuring that the transmittance of 400nm-1100nm remains basically unchanged in the embodiment.

[0087] The excitation spectra of the glass with UV cut-off film obtained in Example 1 monitored at 615nm and 526nm are as follows: Figure 5 As shown. Figure 5 It can be seen that the UV cut-off film has strong UV absorption at 250nm-350nm.

[0088] The emission spectra of the glass with UV cut-off film obtained in Example 1 monitored at 250nm and 275nm are as follows: Figure 6 As shown. Figure 6 It can be seen that the glass with UV cutoff film emits 615nm red light under the excitation of 250nm and 275nm light. At this time, the spectral response of the heterojunction solar cell is higher, thereby further improving the power of the heterojunction solar cell.

[0089] In summary, the present invention discloses a method for preparing a UV high cutoff film, which is mainly applied to the front surface of glass in the form of silica sol combined with a UV high cutoff precursor, efficiently absorbs ultraviolet light and converts it into visible light, thereby achieving efficient cutoff of ultraviolet light, which not only reduces the transmittance of ultraviolet light, but also improves the power of photovoltaic modules. It can be widely used on the surface of photovoltaic glass.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can still modify or replace the technical solution of the present invention with equivalents, and these modifications or equivalent replacements cannot cause the modified technical solution to deviate from the spirit and scope of the technical solution of the present invention.

Claims

1. A method for preparing a UV high cut-off film, characterized in that: The following steps are involved: S1, preparing down-conversion materials; S2, preparing ultraviolet high absorption material; S3, preparing a UV high cutoff material precursor by using a down conversion material and a UV high absorption material; S4, preparing silica sol; S5. Mix the silica sol material and the ultraviolet high cutoff material precursor, apply the mixed solution on the surface of the photovoltaic glass, and solidify and sinter to obtain an ultraviolet high cutoff film.

2. The method for preparing a UV high cut-off film according to claim 1, characterized in that: The S1 specifically includes the following steps: S1-1, weigh a certain amount of rare earth metal oxide and sensitizer, add them to a strong acid and stir to dissolve, then add a metal chelating agent, and continue stirring to obtain solution A; S1-2, weigh a certain amount of rare earth metal oxide and add it into a strong acid to dissolve to obtain solution B; S1-3. Solution A and solution B are fully mixed. During the mixing process, ammonium salt and alkali are added. After the reaction is completed, the solution is cooled to room temperature.

3. The method for preparing a UV high cut-off film according to claim 1, characterized in that: In S1-1, the mass ratio between the rare earth metal oxide and the sensitizer is 1-3:2-6; In S1-2, the mass ratio of the rare earth metal oxide to the strong acid is 1-3:2-6; In S1-3, the volume ratio of solution A to solution B is 1-3:2-6.

4. The method for preparing a UV high cut-off film according to claim 1, characterized in that: The specific steps of S2 are as follows: weigh a certain amount of metal oxide, add it to a strong acid to fully dissolve it, then add an organic solvent to stir and react, and add a metal chelating agent after the reaction is completed, wherein the mass ratio of the metal oxide to the strong acid is 1-3:1-6g, and the mass ratio of the organic solvent to the metal chelating agent is 1-10:1-3.

5. The method for preparing a UV high cut-off film according to claim 1, characterized in that: In S3, the volume ratio of the down-conversion material and the ultraviolet high absorption material for preparing the high cutoff material precursor is 1-3:2-6.

6. The method for preparing a UV high cut-off film according to claim 1, characterized in that: The specific steps of S4 are as follows: take a certain amount of tetraethyl orthosilicate, anhydrous ethanol and deionized water, mix them, adjust the pH value to 4-5 with citric acid, stir at room temperature for 1 hour, continue to add anhydrous ethanol, and age for 48 hours to obtain silica sol, wherein the mass ratio of tetraethyl orthosilicate to anhydrous ethanol and deionized water is 1-3:1-20:1-5.

7. The method for preparing a UV high cut-off film according to claim 1, characterized in that: In S5, the mass ratio of the silica sol material to the ultraviolet high cutoff material precursor is 1-10:1-20; The curing temperature is 90℃-300℃, and the curing time is 30s-5min; the sintering temperature is 500℃-1200℃, and the sintering time is 80s-150s; The thickness of the prepared ultraviolet high cut-off film is 20nm-1000nm.

8. The method for preparing a UV high cut-off film according to claim 2, characterized in that: In S1, the rare earth metal oxide is one or more of yttrium oxide, europium oxide, lanthanum oxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, gadolinium oxide, thulium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, and lutetium oxide; The sensitizer is one or more of calcium oxide, lead sulfide, iron disulfide, bismuth oxide, barium oxide, zinc oxide, and magnesium oxide; The ammonium salt includes one or more of ammonium chloride, ammonium bicarbonate, and ammonium metavanadate; The alkali is one or more of sodium hydroxide, potassium hydroxide, calcium hydroxide, copper hydroxide, and iron hydroxide.

9. The method for preparing a UV high cut-off film according to claim 4, characterized in that: In S2, the metal oxide is one or more of bismuth oxide, barium oxide, calcium oxide, zinc oxide, titanium dioxide, iron oxide, cerium oxide, cuprous oxide, magnesium oxide, and manganese dioxide; The organic solvent is one or more of methanol, anhydrous ethanol, acetone, n-butanol, isopropanol, ethyl acetate, ether, chloroform, dichloromethane and petroleum ether.

10. The method for preparing a UV high cut-off film according to claim 2 or 4, characterized in that: In S1 and S2, the strong acid is one or more of nitric acid, hydrochloric acid, and sulfuric acid; the metal chelating agent is one or more of acetic acid, urea, carbamide, phosphoric acid, citric acid, ethylenediaminetetraacetic acid and its derivatives, tetrasodium glutamate diacetate, and dithiocarbamate derivatives.

Images