Flexible screen with touch area and preparation method thereof

Abstract

The invention relates to a flexible screen with a touch area and a preparation method of the flexible screen, and belongs to the technical field of flexible circuit manufacturing. According to the preparation method, a substrate with a flexible substrate is divided into a three-dimensional touch area and a screen area, a cross-regional hierarchical structure chart is constructed, the three-dimensional touch area is used for constructing a three-dimensional touch device unit, and the screen area is used for constructing a cross-regional hierarchical structure chart; the screen area is used for constructing a screen device unit, and the cross-regional hierarchical structure diagram is used for providing an operation pattern for a subsequent integrated step. The preparation method is high in integration level, the screen and the three-dimensional touch unit are integrated together when the flexible screen is prepared, meanwhile, the period of screen-touch integration is shortened, the preparation cost is reduced, and the production yield and efficiency are improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of flexible circuit manufacturing, and in particular, the present invention relates to a flexible screen with a touch area and a preparation method thereof. Background Art

[0002] At present, due to defects and deficiencies in the production process, flexible screens and their supporting touch devices (such as mice, keyboards, touchpads, etc.) are usually prepared on different production lines and then assembled in assembly plants. This separate preparation process leads to additional assembly time, so the overall assembly cycle is long, the efficiency is low, and it is easy to produce losses. In order to improve the production efficiency of flexible screen related products, a solution needs to be proposed to shorten this assembly cycle and reduce production losses and costs. Summary of the invention

[0003] To solve the above problems, the present invention proposes a flexible screen with a touch area and a method for preparing the same. The method has a high degree of integration. The screen and the three-dimensional touch unit are integrated together during the preparation of the flexible screen, while reducing the cycle of screen-touch integration, which is beneficial to reducing preparation costs.

[0004] A first aspect of the present invention provides a method for preparing a flexible screen with a touch area, comprising:

[0005] S0, dividing the substrate with a flexible substrate into a three-dimensional touch area and a screen area; constructing a cross-area hierarchical structure diagram; wherein the three-dimensional touch area is used to construct a three-dimensional touch device unit, the screen area is used to construct a screen device unit, and the cross-area hierarchical structure diagram is used to provide an operation pattern for steps S1 to S9;

[0006] S1. Depositing a buffer layer on a substrate having a flexible substrate, depositing a bottom gate metal electrode layer on the buffer layer, performing photolithography and etching on the bottom gate metal electrode layer to form a bottom gate electrode and a light shielding electrode pattern, and growing a bottom gate insulating layer on the bottom gate metal electrode layer;

[0007] S2, growing an oxide active layer on the bottom gate insulating layer, forming an oxide active layer pattern after photolithography and etching, and growing a top gate insulating layer on the active layer pattern;

[0008] S3, growing a top gate metal electrode layer on the top gate insulating layer, and forming a top gate electrode pattern after photolithography and etching;

[0009] S4, depositing a hydrogenated amorphous silicon active layer and an amorphous silicon metal electrode layer, forming source electrode and drain electrode patterns on the amorphous silicon metal electrode layer by using a half-exposure photolithography process and an etching process, and then forming an amorphous silicon active layer pattern on the hydrogenated amorphous silicon active layer;

[0010] S5, depositing a protective layer on the top gate electrode, the source electrode and the drain electrode, and forming a protective layer through hole after photolithography and etching;

[0011] S6, depositing a middle metal electrode layer and a middle transparent electrode layer on the protective layer, and after photolithography and etching, forming electrode patterns of a photosensitive output electrode, a photosensitive input electrode, an interconnecting electrode and a transparent cathode respectively;

[0012] S7, coating a pixel definition layer on the middle metal electrode layer and the middle transparent electrode layer, and forming a pixel definition layer through hole after exposure and development;

[0013] S8, sequentially evaporating the electron transport layer, electron injection layer, light emitting layer, hole transport layer, hole injection layer and transparent anode of the screen device unit on the transparent cathode in the through hole of the pixel definition layer;

[0014] S9, encapsulating the screen device unit and performing a curing process;

[0015] S10, performing laser stripping treatment.

[0016] Furthermore, the substrate is made of a glass substrate, a quartz substrate or a silicon wafer;

[0017] The flexible substrate is made of polyimide, polyethylene naphthalate, polyvinyl alcohol or polyethylene terephthalate;

[0018] The buffer layer is made of silicon nitride or silicon oxide, or a stack of silicon nitride and silicon oxide;

[0019] The pixel definition layer is made of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide or polyimide.

[0020] Further, the oxide active layer is a stack of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, aluminum indium tin zinc oxide;

[0021] The hydrogenated amorphous silicon active layer is a phosphorus-doped hydrogenated amorphous silicon layer, a boron-doped hydrogenated amorphous silicon layer or a hydrogenated amorphous silicon layer without any doping, or a stack of any two or three thereof;

[0022] The transparent cathode and the transparent anode are composed of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

[0023] Furthermore, the materials of the bottom gate metal electrode layer, the top gate metal electrode layer, the amorphous silicon metal electrode layer, and the middle metal electrode layer are single metals of molybdenum, copper, aluminum, titanium, niobium or nickel, or molybdenum-titanium, molybdenum-niobium or molybdenum-nickel alloys, or a stack of any several of the single metals and / or any several of the alloys.

[0024] Furthermore, the bottom gate insulating layer, the protective layer or the top gate insulating layer is a single layer of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, or a stacked layer of any two or three of them.

[0025] Further, the electron transport layer is composed of any one or more of the following materials: 1,2,4-triazole derivatives (TAZ), phenylbiphenyloxadiazole compounds (PBD), thiopyranthione compounds (TPS), tris(8-hydroxyquinoline)aluminum (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen), N-arylbenzimidazole (TPBI);

[0026] The electron injection layer is composed of any one or more of the following materials: LiF, LiCoO2, NaCl, MgF2, CsF, CaF2, NaF, RbF, CsCl, YbF3;

[0027] The light-emitting layer is composed of any one or more of the following materials: polystyrene (PPV), polyphenylene vinylene, polythiophenes, 9,10-di-2-naphthyl anthracene (ADN), 2-tert-butyl-9,10-di-2-naphthyl anthracene (TBADN), 2-methyl-9,10-di-2-naphthyl anthracene (MADN), 2,3,6,7-tetramethyl-9,10-dinaphthyl anthracene (TMADN), 9,10-[2,7-di(tert-butyl-9,9-spirofluorenyl) (TBSA), 8-hydroxyquinoline aluminum (Alq3).

[0028] Further, the hole transport layer is composed of any one or more of the following materials: N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPB), polyvinylcarbazole (PVK), 3,4-ethylenedioxythiophene monomer, polystyrene sulfonate (PEDOT:PSS), polyparaphenylene vinylene (PPv), polythiophene, polysilane, triphenylmethane, triarylamine, hydrazone, pyrazoline, oxazole, carbazole, butadiene;

[0029] The hole injection layer is composed of any one or more of the following materials: CuPc, aromatic amine compounds (TNADA), allylamine series or copper phthalocyanine series, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), and MoO3.

[0030] A second aspect of the present invention provides a flexible screen product with a touch area, comprising:

[0031] Flexible substrate;

[0032] A screen area and a three-dimensional touch area integrated on the flexible substrate;

[0033] A plurality of screen device units are arranged in the screen area;

[0034] A plurality of three-dimensional touch device units are arranged in the three-dimensional touch area;

[0035] The screen device unit includes one or more thin film transistor units and one or more organic light emitting diode units;

[0036] The three-dimensional touch control device unit includes one or more thin film transistor units and one or more amorphous silicon phototransistor units.

[0037] Furthermore, the three-dimensional touch area is used to implement at least one of the functions of a keyboard, a mouse or a touchpad.

[0038] Furthermore, the three-dimensional touch area includes:

[0039] Amorphous silicon light sensor, used to sense changes in light signals caused by gestures and output electrical signals;

[0040] A gesture signal reader for reading electrical signals from an amorphous silicon light sensor;

[0041] an analog-to-digital converter for converting an analog signal from the gesture signal reader into a digital signal;

[0042] The gesture signal processing chip is used to process the digital signal from the analog-to-digital converter to obtain a screen control signal to achieve interaction with the content displayed on the screen area.

[0043] The advantages of the present invention compared to the prior art are:

[0044] Can reduce production cycle: Combined preparation can directly skip the assembly stage after the screen and 3D touch device are prepared separately, significantly shortening the overall assembly cycle. This not only saves time, but also reduces the links and costs in production.

[0045] Can improve production efficiency: Through integrated preparation, the production process can be optimized, reducing waiting time and intermediate links on the production line. This optimization helps to improve the productivity of equipment, increase output and reduce manufacturing costs.

[0046] Ability to reduce production risks: Reduces possible problems and losses during the assembly process, because integrated preparation reduces the assembly and disassembly steps between components and reduces the risk of damage.

[0047] It has technical integration advantages: since the screen and 3D touch device are manufactured on the same production line at the same time, the technical integration is smoother, which helps to optimize product performance and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a cross-sectional view of the mask plate 1 provided in an embodiment of the present invention after preparation.

[0049] Figure 2 It is a cross-sectional view of the mask plate 2 provided in an embodiment of the present invention after preparation.

[0050] Figure 3 It is a cross-sectional view of the mask plate 3 provided in the embodiment of the present invention after preparation.

[0051] Figure 4 It is a cross-sectional view of the mask plate 4 provided in the embodiment of the present invention after preparation.

[0052] Figure 5 It is a cross-sectional view of the mask plate 5 provided in the embodiment of the present invention after preparation.

[0053] Figure 6 It is a cross-sectional view of the mask plate 6 provided in the embodiment of the present invention after preparation.

[0054] Figure 7 It is a cross-sectional view of the mask plate 7 provided in the embodiment of the present invention after preparation.

[0055] Figure 8 It is a cross-sectional view of the mask plate 8 provided in an embodiment of the present invention after preparation.

[0056] Fig. 9 It is a cross-sectional view of the mask plate 9 provided in the embodiment of the present invention after preparation.

[0057] Fig.10 This is a schematic diagram of a flexible screen product with a touch area provided in an embodiment of the present invention after demolding is completed.

[0058] Fig.11 This is a schematic diagram of a flexible screen product with a touch area provided in an embodiment of the present invention before film removal.

[0059] Fig.12 It is a schematic diagram of a flexible screen product with a touch area provided in an embodiment of the present invention after demolding and bending.

[0060] Fig.13It is a schematic diagram of three-dimensional gesture control of a flexible screen product with a touch area provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0061] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0062] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the front and back associated objects are in an "or" relationship. "On" refers not only to the surface of the top layer, but also to the through hole, on the bottom platform, etc., depending on the pattern and depth design requirements that need to be covered during actual manufacturing.

[0063] Method Embodiment

[0064] The present invention proposes a flexible screen with a touch area and a preparation method thereof. The method has a high degree of integration. The screen and the three-dimensional touch unit are integrated together during the preparation of the flexible screen, while reducing the cycle of screen-touch integration, which is beneficial to reducing the preparation cost.

[0065] A first aspect of the present invention provides a method for preparing a flexible screen with a touch area, which specifically includes:

[0066] S0. Divide the substrate with a flexible substrate into a three-dimensional touch area and a screen area; construct a cross-area hierarchical structure diagram; wherein the three-dimensional touch area is used to construct a three-dimensional touch device unit, the screen area is used to construct a screen device unit, and the cross-area hierarchical structure diagram is used to provide an operation pattern for steps S1 to S9.

[0067] The cross-region hierarchical structure diagram is constructed by decomposing the structures of the three-dimensional touch device unit and the screen device unit, and unifying the layer structures of the two that can be deposited, photolithographically or etched in the same step into the same layer structure design diagram to form the cross-region hierarchical structure diagram.

[0068] The subsequent steps S1 to S9 can be carried out by performing deposition, photolithography or etching operations in the three-dimensional touch area and the screen area simultaneously or separately according to the structural pattern of each layer in the cross-area hierarchical structure diagram, and layered construction and superposition can be performed to form the required three-dimensional touch device unit or screen device unit.

[0069] Preferably, the cross-region hierarchical structure diagram includes: bottom gate electrode and light-shielding electrode pattern, oxide active layer pattern, top gate electrode pattern, source electrode and drain electrode pattern, amorphous silicon active layer pattern, protective layer through hole, photosensitive output electrode, photosensitive input electrode, interconnect electrode and transparent cathode electrode pattern, pixel definition layer through hole, electron transport layer, electron injection layer, light-emitting layer, hole transport layer, hole injection layer and transparent anode and other structural diagrams.

[0070] S1. Deposit a buffer layer on a substrate with a flexible substrate, and then deposit a bottom gate metal electrode layer on the buffer layer. The bottom gate metal electrode layer is subjected to photolithography and etching processes to form a bottom gate electrode and a light shielding electrode pattern, and then grow a bottom gate insulating layer on the bottom gate metal electrode layer. The cross-sectional view after preparation is as follows: Figure 1 shown.

[0071] The substrate material may be a glass substrate, a quartz substrate or a silicon wafer.

[0072] The flexible substrate material may be polyimide, polyethylene naphthalate, polyvinyl alcohol or polyethylene terephthalate.

[0073] The buffer layer may be silicon nitride, silicon oxide, or a stack of silicon nitride and silicon oxide.

[0074] The metal electrode may be a single metal of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, molybdenum-nickel alloy, or a stack of any of the above metals and / or alloys.

[0075] The exposure band used in the photolithography process of the metal electrode can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process of the metal electrode can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in any combination of the above gases; the wet etching process can use ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, and a mixed solution of any two or three of the above.

[0076] The bottom gate insulating layer may be a single layer of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, or a stacked layer of any two or three of them.

[0077] S2, growing an oxide active layer on the bottom gate insulating layer, forming an oxide active layer pattern after photolithography and etching, and then growing a top gate insulating layer on the active layer pattern. The cross-sectional view after preparation is as follows: Figure 2 shown.

[0078] The oxide active layer can be a stack of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

[0079] Among them, the exposure band used in the photolithography process can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the wet etching process can use ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, oxalic acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia solution, and a mixed solution of any two or three of the above.

[0080] The top gate insulating layer may be a single layer of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, or a stacked layer of any two or three of them.

[0081] S3, growing a top gate metal electrode layer on the top gate insulating layer, and forming a top gate electrode pattern after photolithography and etching. The cross-sectional view after preparation is as follows: Figure 3 shown.

[0082] The top gate metal electrode layer may be a single metal of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, molybdenum-nickel alloy, or a stack of any of the above metals or alloys.

[0083] The exposure band used in the photolithography process can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process of the metal electrode can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in any combination of the above gases; the wet etching process can use ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, and a mixed solution of any two or three of the above.

[0084] S4. According to the operation pattern, a hydrogenated amorphous silicon active layer and an amorphous silicon metal electrode layer are deposited, and a source electrode and a drain electrode pattern are formed on the amorphous silicon metal electrode layer by using a half-exposure photolithography process and an etching process, and then an amorphous silicon active layer pattern is formed on the hydrogenated amorphous silicon active layer. The cross-sectional view after preparation is as follows: Figure 4 shown.

[0085] The amorphous silicon metal electrode layer is used for connecting the anode and cathode pins and connecting to the peripheral circuit.

[0086] in,

[0087] The hydrogenated amorphous silicon active layer can be a phosphorus-doped hydrogenated amorphous silicon layer, a boron-doped hydrogenated amorphous silicon layer or a hydrogenated amorphous silicon layer without any doping, or a stack of any two or three of the above.

[0088] The amorphous silicon metal electrode layer can be a single metal of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, molybdenum-nickel alloy, or a combined laminate of any of the above metals or alloys.

[0089] The exposure band used in the photolithography process can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the etching solution used in the wet etching process includes any one of ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, etc., or a mixed solution of any two or three of the above.

[0090] S5, depositing a protective layer on the top gate electrode, the source electrode and the drain electrode, and forming a protective layer through hole after photolithography and etching. The cross-sectional view after preparation is as follows: Figure 5 shown.

[0091] The protective layer may be a single layer of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, or a stack of any two or three of them. The exposure band used in the photolithography process may be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process may be a dry etching process, a wet etching process, or a mixed process of dry and wet etching;

[0092] Among them, the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the etching solution used in the wet etching process includes any one of ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, etc., or a mixed solution of any two or three of the above.

[0093] S6, depositing a middle metal electrode layer and a middle transparent electrode layer on the protective layer, and after photolithography and etching, forming electrode patterns of a photosensitive output electrode, a photosensitive input electrode, an interconnecting electrode and a transparent cathode respectively. The cross-sectional view after preparation is as follows Figure 6 shown.

[0094] The middle transparent electrode layer is processed to form an electrode pattern of a transparent cathode.

[0095] Exemplarily, the transparent cathode may be an OLED cathode.

[0096] The middle metal electrode layer may be a single metal of molybdenum, copper, aluminum, titanium, niobium, nickel, or a molybdenum-titanium, molybdenum-niobium, molybdenum-nickel alloy, or a combination of any of the above metals or alloys.

[0097] The transparent cathode can be any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

[0098] The exposure band used in the photolithography process can be any one of ultraviolet light, visible light, electron beam, and ion beam; the etching process can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the etching solution used in the wet etching process includes any one of ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, etc., or a mixed solution of any two or three of the above.

[0099] S7, depositing or coating a pixel definition layer on the middle metal electrode layer and the middle transparent electrode layer, and then using an exposure process and an etching process to form a through hole in the pixel definition layer. The cross-sectional view after preparation is as follows: Figure 7 shown.

[0100] The pixel definition layer material deposited or coated is one of the following materials: silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, polyimide, etc.

[0101] The deposition process is physical vapor deposition, a type of chemical vapor deposition.

[0102] The coating process can be any one of spin coating, scraping, spraying, immersion-pulling, and inkjet printing, and the exposure band used in the exposure process can be any one of extreme ultraviolet light, deep ultraviolet light, ultraviolet light, visible light, electron beam, and ion beam. The etching process can be a dry etching process, a wet etching process, or a mixed process of dry and wet processes; wherein the dry etching process can be carried out in a single gas component of chlorine, boron trichloride, hydrogen hexasulfide, carbon tetrafluoride, carbon trifluoride, nitrogen trifluoride, oxygen, argon, and nitrogen, or in a combination of any of the above gases; the etching solution used in the wet etching process includes any one of ammonia water, sodium hydroxide, potassium hydroxide, phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, hydrochloric acid, sulfuric acid, hydrogen peroxide, aqua regia, etc., or a mixed solution of any two or three of the above.

[0103] S8, sequentially depositing the electron transport layer, electron injection layer, light emitting layer, hole transport layer, hole injection layer and transparent anode of the screen device unit on the transparent cathode in the through hole of the pixel definition layer. The cross-sectional view after preparation is as follows Figure 8 shown.

[0104] Exemplarily, the transparent anode may be an OLED anode.

[0105] The electron transport layer can be any one or more of the following materials: 1,2,4-triazole derivatives (TAZ), phenylbiphenyloxadiazole compounds (PBD), thiopyranthione compounds (TPS), tris(8-hydroxyquinoline)aluminum (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen), N-arylbenzimidazole (TPBI).

[0106] The electron injection layer can be made of any one or more of the following materials: LiF, LiCoO2, NaCl, MgF2, CsF, CaF2, NaF, RbF, CsCl, YbF3.

[0107] The light-emitting layer material can be any one or more of the following materials: polystyrene (PPV), polyphenylene vinylene, polythiophenes, 9,10-di-2-naphthyl anthracene (ADN), 2-tert-butyl-9,10-di-2-naphthyl anthracene (TBADN), 2-methyl-9,10-di-2-naphthyl anthracene (MADN), 2,3,6,7-tetramethyl-9,10-dinaphthyl anthracene (TMADN), 9,10-[2,7-di(tert-butyl-9,9-spirofluorenyl) (TBSA), 8-hydroxyquinoline aluminum (Alq3).

[0108] The hole transport layer can be any one or more of the following materials: N, N'-bis-(1-naphthyl)-N, N'-biphenyl-1,1'-biphenyl-4,4'-diamine (NPB), polyvinyl carbazole (PVK), 3,4-ethylenedioxythiophene monomer, polystyrene sulfonate (PEDOT: PSS), polyparaphenylene vinylene (PPv), polythiophene, polysilane, triphenylmethane, triarylamine, hydrazone, pyrazoline, oxazole, carbazole, butadiene;

[0109] The hole injection layer can be any one or more of the following materials: CuPc, aromatic amine compounds (TNADA), allylamine system or copper phthalocyanine system, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), MoO3.

[0110] The transparent anode can be any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

[0111] S9, encapsulate the screen device unit, and apply the adhesive around the encapsulation cover plate by using a glue dispenser. Then, in a nitrogen environment, press the lower plate of the screen device unit coated with the module frame sealant with the encapsulation cover plate, and perform a curing process. The cross-sectional view after preparation is as follows: Fig. 9 shown.

[0112] Wherein, the module frame sealing glue is one of epoxy resin, silicone, polyurethane, acrylic glue, and UV curing glue.

[0113] S10, laser stripping is performed to separate the flexible substrate with the flexible screen and the touch area from the base plate. The cross-sectional diagram after the stripping is completed is shown in FIG. Fig.10 shown.

[0114] The method of the present invention can manufacture the touch area in an integrated manner while manufacturing the flexible screen, directly skipping the assembly stage after the screen and the touch device are prepared separately, significantly shortening the overall assembly cycle, and improving production efficiency. At the same time, it reduces the problems and losses that may occur during the assembly process, because the integrated preparation reduces the assembly and disassembly steps between components and reduces the risk of damage. In addition, since the screen and the touch device are prepared on the same production line at the same time, the technical integration is smoother, which helps to optimize product performance and stability, and can further play its technical integration advantages.

[0115] A second aspect of the present invention provides a flexible screen product with a touch area, comprising:

[0116] A flexible substrate and a screen area and a three-dimensional touch area integrated on the flexible substrate;

[0117] A plurality of screen device units are arranged in the screen area;

[0118] A plurality of three-dimensional touch device units are arranged in the three-dimensional touch area;

[0119] The screen device unit includes one or more thin film transistor units and one or more organic light emitting diode units.

[0120] The three-dimensional touch control device unit includes one or more thin film transistor units and one or more amorphous silicon phototransistor units.

[0121] like Fig.11 , is a schematic diagram of a flexible screen product with a touch area provided in an embodiment of the present invention before demolding.

[0122] like Fig.12 , is a schematic diagram of a flexible screen product with a touch area provided in an embodiment of the present invention after demolding and bending.

[0123] Preferably, the three-dimensional touch area can realize one or more functions of control devices such as keyboard, mouse, touch pad, etc. Keyboard refers to a keyboard such as a computer keyboard or a control keyboard that generates control signals and information signals.

[0124] Preferably, the three-dimensional touch area includes:

[0125] Amorphous silicon light sensor, used to sense changes in light signals caused by gestures and output electrical signals;

[0126] A gesture signal reader for reading electrical signals from an amorphous silicon light sensor;

[0127] an analog-to-digital converter for converting an analog signal from the gesture signal reader into a digital signal;

[0128] The gesture signal processing chip is used to process the digital signal from the analog-to-digital converter to obtain a screen control signal to achieve interaction with the content displayed on the screen area.

[0129] like Fig.13 3D gesture control schematic diagram of a flexible screen product with a touch area provided by an embodiment of the present invention. The 3D touch device unit adopts an amorphous silicon light sensor, which can sense the change of light signal without touching the finger, so the shadow of the gesture can be used to activate the sensing unit to generate a current or voltage response. After reading, analog-to-digital conversion and recognition processing, these electrical signals can be fed back to the screen to implement relevant interactive instructions. This technology can achieve a 3D interactive touch effect, allowing users to complete operations without actually touching the screen, such as mouse movement, screen switching, and digital and subtitle input.

[0130] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A method for preparing a flexible screen with a touch area, characterized in that: include: S0, dividing the substrate having a flexible substrate into a three-dimensional touch area and a screen area; Constructing a cross-region hierarchical structure diagram; wherein the three-dimensional touch area is used to construct a three-dimensional touch device unit, the screen area is used to construct a screen device unit, and the cross-region hierarchical structure diagram is used to provide an operation pattern for steps S1 to S9; S1. Depositing a buffer layer on a substrate having a flexible substrate, depositing a bottom gate metal electrode layer on the buffer layer, performing photolithography and etching on the bottom gate metal electrode layer to form a bottom gate electrode and a light shielding electrode pattern, and growing a bottom gate insulating layer on the bottom gate metal electrode layer; S2, growing an oxide active layer on the bottom gate insulating layer, forming an oxide active layer pattern after photolithography and etching, and growing a top gate insulating layer on the active layer pattern; S3, growing a top gate metal electrode layer on the top gate insulating layer, and forming a top gate electrode pattern after photolithography and etching; S4, depositing a hydrogenated amorphous silicon active layer and an amorphous silicon metal electrode layer, forming source electrode and drain electrode patterns on the amorphous silicon metal electrode layer by using a half-exposure photolithography process and an etching process, and then forming an amorphous silicon active layer pattern on the hydrogenated amorphous silicon active layer; S5, depositing a protective layer on the top gate electrode, the source electrode and the drain electrode, and forming a protective layer through hole after photolithography and etching; S6, depositing a middle metal electrode layer and a middle transparent electrode layer on the protective layer, and after photolithography and etching, forming electrode patterns of a photosensitive output electrode, a photosensitive input electrode, an interconnecting electrode and a transparent cathode respectively; S7, coating a pixel definition layer on the middle metal electrode layer and the middle transparent electrode layer, and forming a pixel definition layer through hole after exposure and development; S8, sequentially evaporating the electron transport layer, electron injection layer, light emitting layer, hole transport layer, hole injection layer and transparent anode of the screen device unit on the transparent cathode in the through hole of the pixel definition layer; S9, encapsulating the screen device unit and performing a curing process; S10, performing laser stripping treatment.

2. The method for preparing a flexible screen with a touch area according to claim 1, characterized in that: The substrate is made of a glass substrate, a quartz substrate or a silicon wafer; The flexible substrate is made of polyimide, polyethylene naphthalate, polyvinyl alcohol or polyethylene terephthalate; The buffer layer is made of silicon nitride or silicon oxide, or a stack of silicon nitride and silicon oxide; The pixel definition layer is made of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide or polyimide.

3. The method for preparing a flexible screen with a touch area according to claim 1, characterized in that: The oxide active layer is a stack of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, aluminum indium tin zinc oxide; The hydrogenated amorphous silicon active layer is a phosphorus-doped hydrogenated amorphous silicon layer, a boron-doped hydrogenated amorphous silicon layer or a hydrogenated amorphous silicon layer without any doping, or a stack of any two or three thereof; The transparent cathode and the transparent anode are composed of any one or more of the following materials: tin oxide, indium oxide, gallium oxide, copper oxide, bismuth oxide, indium zinc oxide, zinc tin oxide, aluminum tin oxide, indium tin oxide, indium gallium zinc oxide, indium tin zinc oxide, and aluminum indium tin zinc oxide.

4. The method for preparing a flexible screen with a touch area according to claim 1, characterized in that: The materials of the bottom gate metal electrode layer, the top gate metal electrode layer, the amorphous silicon metal electrode layer and the middle metal electrode layer are single metals of molybdenum, copper, aluminum, titanium, niobium or nickel, or molybdenum-titanium, molybdenum-niobium or molybdenum-nickel alloys, or a stack of any several of the single metals and / or any several of the alloys.

5. The method for preparing a flexible screen with a touch area according to claim 1, characterized in that: The bottom gate insulating layer, the protective layer or the top gate insulating layer is a single layer of silicon nitride, silicon oxide, aluminum oxide, hafnium oxide, zirconium oxide, or a stacked layer of any two or three of them.

6. The method for preparing a flexible screen with a touch area according to claim 1, characterized in that: The electron transport layer is composed of any one or more of the following materials: 1,2,4-triazole derivatives (TAZ), phenylbiphenyloxadiazole compounds (PBD), thiopyranthione compounds (TPS), tris(8-hydroxyquinoline)aluminum (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen), N-arylbenzimidazole (TPBI); The electron injection layer is composed of any one or more of the following materials: LiF, LiCoO2, NaCl, MgF2, CsF, CaF2, NaF, RbF, CsCl, YbF3; The light-emitting layer is composed of any one or more of the following materials: polystyrene (PPV), polyphenylene vinylene, polythiophenes, 9,10-di-2-naphthyl anthracene (ADN), 2-tert-butyl-9,10-di-2-naphthyl anthracene (TBADN), 2-methyl-9,10-di-2-naphthyl anthracene (MADN), 2,3,6,7-tetramethyl-9,10-dinaphthyl anthracene (TMADN), 9,10-[2,7-di(tert-butyl-9,9-spirofluorenyl) (TBSA), 8-hydroxyquinoline aluminum (Alq3).

7. The method for preparing a flexible screen with a touch area according to claim 1, characterized in that: The hole transport layer is composed of any one or more of the following materials: N,N′-bis-(1-naphthyl)-N,N′-biphenyl-1,1′-biphenyl-4,4′-diamine (NPB), polyvinylcarbazole (PVK), 3,4-ethylenedioxythiophene monomer, polystyrene sulfonate (PEDOT:PSS), poly(p-phenylene vinylene) (PPv), polythiophene, polysilane, triphenylmethane, triarylamine, hydrazone, pyrazoline, oxazole, carbazole, butadiene; The hole injection layer is composed of any one or more of the following materials: CuPc, aromatic amine compounds (TNADA), allylamine series or copper phthalocyanine series, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), and MoO3.

8. A flexible screen product with a touch area, characterized in that: Manufactured based on the preparation method according to any one of claims 1 to 7, the flexible screen product with a touch area comprises: Flexible substrate; A screen area and a three-dimensional touch area integrated on the flexible substrate; A plurality of screen device units are arranged in the screen area; A plurality of three-dimensional touch device units are arranged in the three-dimensional touch area; The screen device unit includes one or more thin film transistor units and one or more organic light emitting diode units; The three-dimensional touch control device unit includes one or more thin film transistor units and one or more amorphous silicon phototransistor units.

9. The flexible screen product with a touch area according to claim 8, characterized in that: include: The three-dimensional touch area is used to implement at least one of the functions of a keyboard, a mouse or a touch pad.

10. The flexible screen product with a touch area according to claim 8, characterized in that: The three-dimensional touch area includes: Amorphous silicon light sensor, used to sense changes in light signals caused by gestures and output electrical signals; A gesture signal reader for reading electrical signals from an amorphous silicon light sensor; an analog-to-digital converter for converting an analog signal from the gesture signal reader into a digital signal; The gesture signal processing chip is used to process the digital signal from the analog-to-digital converter to obtain a screen control signal to achieve interaction with the content displayed on the screen area.

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