Laser cleaning simulation method based on light-heat-flow multi-field coupling

Abstract

The invention provides a laser cleaning simulation method based on light-heat-flow multi-field coupling. The method comprises the following steps: step 1, light field modeling; 2, thermal field modeling; step 3, flow field modeling; 4, introducing a weight coefficient, and establishing a multi-physical field coupling model of a light field, a thermal field and a flow field; and 5, carrying out laser cleaning simulation research. According to the method, in the laser cleaning process, different physical states can cause different weight coefficients of different physical fields to be inconsistent, a model established by considering the weight coefficients in a laser cleaning model can more accurately reflect the actual process of laser cleaning of a to-be-cleaned material, and the problem that in a constructed multi-field coupling model, the weight coefficients of the to-be-cleaned material are not consistent is solved. And the weight coefficient is simplified and neglected in the previous research.

Description

Technical Field

[0001] The invention relates to the technical field of laser cleaning, and in particular to a laser cleaning simulation method based on light-heat-fluid multi-field coupling. Background Art

[0002] Green manufacturing has become one of the five major projects for China's future development and construction. It is a modern manufacturing model that takes ecological environment and resource benefits as core considerations. Laser cleaning technology is known as "the most promising green cleaning technology in the 21st century". Laser cleaning technology refers to a process in which an external laser beam acts on the surface of the pollutant to be cleaned, and the laser and the pollutant undergo a complex physical and chemical reaction to remove the pollutant and collect it.

[0003] At present, the research on the mechanism of laser cleaning is still in the exploratory stage worldwide, and the mechanism of laser cleaning under the light-heat-fluid multi-field coupling is still unclear. Therefore, it is an urgent problem to provide a simulation scheme under the light-heat-fluid multi-field coupling to obtain the mechanism of action between the laser and the material to be cleaned.

[0004] In previous studies, only the simulation analysis of laser cleaning of materials to be cleaned under the action of light field, thermal field and flow field was considered separately. This research method cannot truly reflect the action characteristics of laser and materials to be cleaned. Previous studies ignored the coupling relationship between light-heat-flow field and did not consider the mutual influence between light-heat-flow field, making it difficult to obtain a true simulation of laser cleaning.

[0005] In addition, in the constructed multi-field coupling model, the weight coefficient has been simplified and ignored in previous studies. The weight coefficients in different physical fields are particularly important. In previous studies, the models and factors considered were not comprehensive, and could not truly reflect the interaction between the laser and the material to be cleaned, making it difficult to accurately obtain the parameters and morphology during and after laser cleaning. Therefore, how to efficiently and accurately obtain laser cleaning simulation is an important issue that needs to be solved urgently. Summary of the invention

[0006] The purpose of the present invention is to address the problems in the prior art of "simulation analysis of laser cleaning of materials to be cleaned under the effects of light field, thermal field and flow field are only considered", and "in the constructed multi-field coupling model, the weight coefficient has been simplified and ignored in previous studies". A laser cleaning simulation method based on light-heat-flow multi-field coupling is proposed.

[0007] The present invention is implemented by the following technical scheme. The present invention proposes a laser cleaning simulation method based on light-heat-flow multi-field coupling, and the method comprises the following steps:

[0008] Step 1: Light field modeling: construct an energy coupling model and establish a transient optical model of the substrate surface;

[0009] Step 2: Thermal field modeling: construct heat conduction and heat flow models, establish a Gaussian distribution laser model, and use Green's function to solve and obtain the surface temperature;

[0010] Step 3: Flow field modeling: Construct a flow field model and determine the flow field boundary conditions based on particle flow and plasma expansion;

[0011] Step 4: Introduce weight coefficients to establish a multi-physics coupling model of light field, thermal field and flow field: Introduce weight coefficients G(J), R(J) and L(J) to establish a multi-physics coupling model of light field, thermal field and flow field;

[0012] Step 5: Conduct laser cleaning simulation research.

[0013] Furthermore, in step 1, during the laser cleaning process, the light field acts on the substrate surface and excites free electrons on the metal surface through inverse bremsstrahlung absorption. The energy coupling model is:

[0014]

[0015]

[0016] Among them, C e and C l are the electron heat capacity and lattice heat capacity; T e and T l are the electron temperature and lattice temperature respectively; k e is the electronic thermal conductivity, g is the electron-phonon coupling coefficient, I eff is the laser heat source term.

[0017] Furthermore, in step 1, a transient optical model is constructed according to Drude's classical free electron gas theory, and the dielectric function equation is expressed as:

[0018]

[0019]

[0020] Where ε1 is the real part of the dielectric function; ε2 is the imaginary part of the dielectric function; ρ e is the free electron density, is the laser frequency, m e is the mass of electron, ε0 is the dielectric constant of vacuum, τ e is the electron relaxation time;

[0021] The complex refractive index of a free electron gas is expressed as:

[0022]

[0023] in, is the normal refractive index, is the extinction coefficient, and its expression is:

[0024]

[0025]

[0026] The reflectivity R and absorption coefficient α during laser cleaning are expressed as:

[0027]

[0028]

[0029] Furthermore, in step 2, during the laser cleaning process, the heat flux of heat conduction is on the plane and is proportional to the local temperature gradient, expressed as:

[0030] Φ(z)=-k(dT / dz)

[0031] Where k is the thermal conductivity of the material and z is the thickness; the heat flow equation is expressed as:

[0032]

[0033] Where Cp is the specific heat; the laser satisfies the Gaussian distribution, and the expression is:

[0034] q(x,y)=2(1-R)I / πr 2 *exp(-2(x 2 +y 2 ) / r 2 )

[0035] Where q is the energy density of the laser, I is the peak energy of the incident laser, R is the reflectivity, and r is the beam spot radius.

[0036] Further, in step 2, the thermal diffusion coefficient K d It is expressed as:

[0037] K d =k / p*Cp

[0038] Assuming that the thermal and optical parameters remain constant with temperature, the analytical solution is obtained using the Green's function, which is expressed as:

[0039] T(z,t)=2(1-R)I / πr 2 *(K d t / k)*(ierfc(z / kt)-ierfc(z 2 +r 2 / kt))

[0040] Where ierfc is the complementary error function, expressed as:

[0041]

[0042] Under the action of a single laser pulse, the temperature of the irradiated target surface is:

[0043] T(0,t)=2(1-R)P / k*(K d t / π).

[0044] Furthermore, in step 3, the temperature of laser cleaning is too high, the substrate material will melt, and a flow field will be formed. Thus, the laser cleaning flow field modeling is carried out, and the expression is:

[0045]

[0046] Among them, c l , ρ l ,k l are heat capacity, mass density and thermal conductivity of the liquid, n x is the excited particle density, H is the vapor height, σ PI is the photoionization cross section;

[0047] According to the Hertz-Knudsen equation, the rate of surface evaporation is expressed as

[0048]

[0049] Where p is the vapor surface pressure, ρ is the material density, m is the average mass of the particles, and k b is the Boltzmann constant, T(0,t) is the surface temperature;

[0050] According to the Clapeyron equation, the steam surface pressure is expressed as:

[0051]

[0052] Where p b is 1atm, L is the latent heat of the target material, T b is the pressure p b Boiling temperature below

[0053] Excited particle density n x It is expressed as:

[0054] n x (T p )=n0 exp(-ε / k b T p )

[0055] Where n0 is the total particle density, ε is the energy from the ground state to the first excited state, and Tp is the plasma temperature.

[0056] Further, in step 3, during the laser cleaning process, as the plasma expands outward, the plasma length changes with time, and the kinetic equation of plasma expansion is expressed as:

[0057]

[0058] Where dX / dt and dY / dt are the expansion speeds of the plasma edges X and Y, respectively;

[0059] The thermal particle velocity v is expressed as:

[0060]

[0061] Based on the law of conservation of energy, the flow field boundary conditions are expressed as:

[0062]

[0063] Furthermore, in step 4, the multi-physics coupling model is:

[0064]

[0065] Among them, G(J), R(J) and L(J) are the weight coefficients of light field, thermal field and flow field respectively.

[0066] The present invention also proposes an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the laser cleaning simulation method based on light-heat-fluid multi-field coupling are implemented.

[0067] The present invention also proposes a computer-readable storage medium for storing computer instructions, which, when executed by a processor, implement the steps of the laser cleaning simulation method based on light-heat-fluid multi-field coupling.

[0068] Beneficial effects of the present invention:

[0069] The present invention proposes a laser cleaning simulation method based on light-heat-flow multi-field coupling, and the method takes into account the simulation analysis of laser cleaning of materials to be cleaned under the coupling of light field, heat field and flow field. The action characteristics of the laser and the material to be cleaned are truly reflected in the COMSOL Multiphysics simulation, and the parameters and morphology are obtained during and after the laser cleaning process. Secondly, the method takes into account that different physical states will cause inconsistent weight coefficients of different physical fields during the laser cleaning process. The model established by considering the weight coefficient in the laser cleaning model will more accurately reflect the actual process of laser cleaning of materials to be cleaned, and solves the problem that the weight coefficient in the constructed multi-field coupling model has been simplified and ignored in previous studies. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0071] Figure 1 This is a flow chart of a laser cleaning simulation method based on light-heat-fluid multi-field coupling described in the present invention.

[0072] Figure 2 This is the mesh division diagram of the three-dimensional geometric model.

[0073] Figure 3 For a laser energy density of 3 J / cm 2 Below are the morphologies of the cross sections at different times.

[0074] Figure 4 For a laser energy density of 3 J / cm 2 Below, surface maximum temperature map and morphology.

[0075] Figure 5 For a laser energy density of 9 J / cm 2 Below, surface maximum temperature map and morphology.

[0076] Figure 6 When the laser energy density is 15 J / cm 2 Below, surface maximum temperature map and morphology.

[0077] Figure 7 For a laser energy density of 19 J / cm 2 Below, surface maximum temperature map and morphology. DETAILED DESCRIPTION

[0078] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0079] Combination Figure 1-Figure 7 The present invention proposes a laser cleaning simulation method based on light-heat-fluid multi-field coupling, the method comprising the following steps:

[0080] Step 1: Light field modeling: construct an energy coupling model and establish a transient optical model of the substrate surface;

[0081] Step 2: Thermal field modeling: construct heat conduction and heat flow models, establish a Gaussian distribution laser model, and use Green's function to solve and obtain the surface temperature;

[0082] Step 3: Flow field modeling: Construct a flow field model and determine the flow field boundary conditions based on particle flow and plasma expansion;

[0083] Step 4: Introduce weight coefficients to establish a multi-physics coupling model of light field, thermal field and flow field: Introduce weight coefficients G(J), R(J) and L(J) to establish a multi-physics coupling model of light field, thermal field and flow field;

[0084] Step 5: Conduct laser cleaning simulation research.

[0085] In step 1, during the laser cleaning process, the light field acts on the substrate surface and excites the free electrons on the metal surface through inverse bremsstrahlung absorption. The energy coupling model is:

[0086]

[0087]

[0088] Among them, C e and C l are the electron heat capacity and lattice heat capacity; T e and T l are the electron temperature and lattice temperature respectively; k e is the electronic thermal conductivity, g is the electron-phonon coupling coefficient, I eff is the laser heat source term.

[0089] In step 1, a transient optical model is constructed according to Drude's classical free electron gas theory, and the dielectric function equation is expressed as:

[0090]

[0091]

[0092] Where ε1 is the real part of the dielectric function; ε2 is the imaginary part of the dielectric function; ρ e is the free electron density, is the laser frequency, m e is the mass of electron, ε0 is the dielectric constant of vacuum, τ e is the electron relaxation time;

[0093] The complex refractive index of a free electron gas is expressed as:

[0094]

[0095] in, is the normal refractive index, is the extinction coefficient, and its expression is:

[0096]

[0097]

[0098] The reflectivity R and absorption coefficient α during laser cleaning are expressed as:

[0099]

[0100]

[0101] In step 2, during the laser cleaning process, the heat flux of heat conduction is on the plane and is proportional to the local temperature gradient, expressed as:

[0102] Φ(z)=-k(dT / dz)

[0103] Where k is the thermal conductivity of the material and z is the thickness; the heat flow equation is expressed as:

[0104]

[0105] Where Cp is the specific heat; the laser satisfies the Gaussian distribution, and the expression is:

[0106] q(x,y)=2(1-R)I / πr 2 *exp(-2(x 2 +y 2 ) / r 2 )

[0107] Where q is the energy density of the laser, I is the peak energy of the incident laser, R is the reflectivity, and r is the beam spot radius.

[0108] In step 2, the thermal diffusion coefficient K d It is expressed as:

[0109] K d =k / p*Cp

[0110] Assuming that the thermal and optical parameters remain constant with temperature, the analytical solution is obtained using the Green's function, which is expressed as:

[0111] T(z,t)=2(1-R)I / πr 2 *(K d t / k)*(ierfc(z / kt)-ierfc(z 2 +r 2 / kt))

[0112] Where ierfc is the complementary error function, expressed as:

[0113]

[0114] In the case of a single laser pulse, the temperature of the irradiated target surface is:

[0115] T(0,t)=2(1-R)P / k*(K d t / π).

[0116] In step 3, the temperature of laser cleaning is too high, the substrate material will melt, and a flow field will be formed. Therefore, the laser cleaning flow field modeling is carried out, and the expression is:

[0117]

[0118] Among them, c l , ρ l ,k l are heat capacity, mass density and thermal conductivity of the liquid, n x is the excited particle density, H is the vapor height, σ PI is the photoionization cross section, usually 1.3×10 -17 cm 2 ;

[0119] According to the Hertz-Knudsen equation, the rate of surface evaporation is expressed as

[0120]

[0121] Where p is the vapor surface pressure, ρ is the material density, m is the average mass of the particles, and k b is the Boltzmann constant, T(0,t) is the surface temperature;

[0122] According to the Clapeyron equation, the steam surface pressure is expressed as:

[0123]

[0124] Where p b is 1atm, L is the latent heat of the target material, T b is the pressure p b Boiling temperature below

[0125] Excited particle density n x It is expressed as:

[0126] n x (T p )=n0 exp(-ε / k b T p )

[0127] Where n0 is the total particle density, ε is the energy from the ground state to the first excited state, and Tp is the plasma temperature.

[0128] In step 3, during the laser cleaning process, as the plasma expands outward, the plasma length changes with time, and the kinetic equation for plasma expansion is expressed as:

[0129]

[0130] Where dX / dt and dY / dt are the expansion speeds of the plasma edges X and Y, respectively;

[0131] The thermal particle velocity v is expressed as:

[0132]

[0133] Based on the law of conservation of energy, the flow field boundary conditions are expressed as:

[0134]

[0135] In step 4, the multiphysics coupling model is:

[0136]

[0137] Among them, G(J), R(J) and L(J) are the weight coefficients of light field, thermal field and flow field respectively.

[0138] In step 5, the multi-physics coupling model is simulated in COMSOL Multiphysics to obtain the interaction characteristics between the laser and the material to be cleaned, so as to obtain the parameters and morphology during and after laser cleaning. For details, see Figure 4 , Figure 5 , Figure 6 and Figure 7 , Figure 4 For a laser energy density of 3 J / cm 2 Below, surface maximum temperature map and morphology. Figure 5 For a laser energy density of 9 J / cm 2 Below, surface maximum temperature map and morphology. Figure 6 When the laser energy density is 15 J / cm 2 Below, surface maximum temperature map and morphology. Figure 7 For a laser energy density of 19 J / cm 2 Below, surface maximum temperature map and morphology.

[0139] The present invention also proposes an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the steps of the laser cleaning simulation method based on light-heat-fluid multi-field coupling are implemented.

[0140] The present invention also proposes a computer-readable storage medium for storing computer instructions, which, when executed by a processor, implement the steps of the laser cleaning simulation method based on light-heat-fluid multi-field coupling.

[0141] The memory in the embodiments of the present application may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may be a random access memory (RAM), which is used as an external cache. By way of example and not limitation, many forms of RAM are available, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), and direct RAM bus RAM (DRRAM). It should be noted that the memory of the method described in the present invention is intended to include, but is not limited to, these and any other suitable types of memory.

[0142] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from a website site, computer, server or data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (digital subscriber line, DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more available media integrated. The available medium may be a magnetic medium (eg, a floppy disk, a hard disk, a magnetic tape), an optical medium (eg, a high-density digital video disc (DVD)), or a semiconductor medium (eg, a solid state disc (SSD)).

[0143] In the implementation process, each step of the above method can be completed by an integrated logic circuit of hardware in a processor or an instruction in the form of software. The steps of the method disclosed in conjunction with the embodiment of the present application can be directly embodied as a hardware processor for execution, or a combination of hardware and software modules in a processor for execution. The software module can be located in a storage medium mature in the art such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in a memory, and the processor reads the information in the memory and completes the steps of the above method in conjunction with its hardware. To avoid repetition, it is not described in detail here.

[0144] It should be noted that the processor in the embodiment of the present application can be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method embodiment can be completed by an integrated logic circuit of hardware in the processor or an instruction in the form of software. The above processor can be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application can be implemented or executed. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc. The steps of the method disclosed in the embodiment of the present application can be directly embodied as a hardware decoding processor to perform, or the hardware and software modules in the decoding processor can be combined and performed. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in a memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

[0145] The above is a detailed introduction to the laser cleaning simulation method based on light-heat-fluid multi-field coupling proposed in the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for general technical personnel in this field, according to the idea of ​​the present invention, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A laser cleaning simulation method based on light-heat-fluid multi-field coupling, It is characterized in that The method comprises the following steps: Step 1: Light field modeling: construct an energy coupling model and establish a transient optical model of the substrate surface; Step 2: Thermal field modeling: construct heat conduction and heat flow models, establish a Gaussian distribution laser model, and use Green's function to solve and obtain the surface temperature; Step 3: Flow field modeling: Construct a flow field model and determine the flow field boundary conditions based on particle flow and plasma expansion; Step 4: Introduce weight coefficients to establish a multi-physics coupling model of light field, thermal field and flow field: Introduce weight coefficients G(J), R(J) and L(J) to establish a multi-physics coupling model of light field, thermal field and flow field; Step 5: Conduct laser cleaning simulation research.

2. The method according to claim 1, It is characterized in that In step 1, during the laser cleaning process, the light field acts on the substrate surface and excites the free electrons on the metal surface through inverse bremsstrahlung absorption. The energy coupling model is: Among them, C e and C l are the electron heat capacity and lattice heat capacity; T e and T l are the electron temperature and lattice temperature respectively; k e is the electronic thermal conductivity, g is the electron-phonon coupling coefficient, I eff is the laser heat source term.

3. The method according to claim 1, It is characterized in that In step 1, a transient optical model is constructed according to Drude's classical free electron gas theory, and the dielectric function equation is expressed as: Where ε 1 is the real part of the dielectric function; ε 2 is the imaginary part of the dielectric function; ρ e is the free electron density, is the laser frequency, m e is the mass of the electron, ε 0 is the dielectric constant of vacuum, τ e is the electron relaxation time; The complex refractive index of a free electron gas is expressed as: in, is the normal refractive index, is the extinction coefficient, and its expression is: The reflectivity R and absorption coefficient α during laser cleaning are expressed as:

4. The method according to claim 1, It is characterized in that In step 2, during the laser cleaning process, the heat flux of heat conduction is on the plane and is proportional to the local temperature gradient, expressed as: Φ(z)=-k(dT / dz) Where k is the thermal conductivity of the material and z is the thickness; the heat flow equation is expressed as: Where Cp is the specific heat; the laser satisfies the Gaussian distribution, and the expression is: q(x,y)=2(1-R)I / πr 2 *exp(-2(x 2 +y 2 ) / r 2 ) Where q is the energy density of the laser, I is the peak energy of the incident laser, R is the reflectivity, and r is the beam spot radius.

5. The method according to claim 4, It is characterized in that In step 2, the thermal diffusion coefficient K d It is expressed as: K d =k / p*Cp Assuming that the thermal and optical parameters remain constant with temperature, the analytical solution is obtained using the Green's function, which is expressed as: T(z,t)=2(1-R)I / πr 2 *(K d t / k)*(ierfc(z / kt)-ierfc(z 2 +r 2 / kt)) Where ierfc is the complementary error function, expressed as: In the case of a single laser pulse, the temperature of the irradiated target surface is: T(0,t)=2(1-R)P / k*(K d t / π)。 6. The method according to claim 1, It is characterized in that In step 3, the temperature of laser cleaning is too high, the substrate material will melt, and a flow field will be formed. Therefore, the laser cleaning flow field modeling is carried out, and the expression is: Among them, c l , ρ l ,k l are heat capacity, mass density and thermal conductivity of the liquid, n x is the excited particle density, H is the vapor height, σ PI is the photoionization cross section; According to the Hertz-Knudsen equation, the rate of surface evaporation is expressed as Where p is the vapor surface pressure, ρ is the material density, m is the average mass of the particles, and k b is the Boltzmann constant, T(0,t) is the surface temperature; According to the Clapeyron equation, the steam surface pressure is expressed as: Where p b is 1atm, L is the latent heat of the target material, T b is the pressure p b Boiling temperature below Excited particle density n x It is expressed as: n x (T p )=n 0 exp(-ε / k b T p ) Where n 0 is the total particle density, ε is the energy from the ground state to the first excited state, and Tp is the plasma temperature.

7. The method according to claim 6, It is characterized in that In step 3, during the laser cleaning process, as the plasma expands outward, the plasma length changes with time, and the kinetic equation for plasma expansion is expressed as: Where dX / dt and dY / dt are the expansion speeds of the plasma edges X and Y, respectively; The thermal particle velocity v is expressed as: Based on the law of conservation of energy, the flow field boundary conditions are expressed as:

8. The method according to claim 1, It is characterized in that In step 4, the multiphysics coupling model is: Among them, G(J), R(J) and L(J) are the weight coefficients of light field, thermal field and flow field respectively.

9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program. It is characterized in that When the processor executes the computer program, the steps of the method according to any one of claims 1 to 8 are implemented.

10. A computer-readable storage medium for storing computer instructions, It is characterized in that When the computer instructions are executed by a processor, the steps of the method according to any one of claims 1 to 8 are implemented.

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