Light emitting grating voltage and gray scale anchoring method of gate regulation laminated structure light emitting device

Abstract

The invention discloses a light emitting grating voltage and gray scale anchoring method of a gate regulation laminated structure light emitting device. The method comprises the following steps: controlling a first power supply to apply a test current to the light emitting device; enabling the grid regulation electrode to apply a plurality of different test grid voltages to the first electrode and / or the second electrode, and collecting the luminous efficiency and the luminous brightness; performing data fitting on the test grid voltage and the luminous efficiency to obtain a first function relation graph, and obtaining a luminous grid voltage from the first function relation graph; obtaining light emitting grating voltages corresponding to a plurality of different test currents; data fitting is carried out on each test current and grating voltage, and a second function relation graph is obtained; data fitting is carried out on each test current and the light emitting brightness under the corresponding light emitting grating voltage to obtain a third function relation graph; and obtaining a standard current and a standard gate voltage corresponding to each standard gray-scale value of the light-emitting device according to the second function relation graph and the third function relation graph. According to the invention, the grid voltage enabling each gray scale to reach ideal luminous efficiency can be determined.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic display, and in particular to a method for anchoring a light-emitting gate voltage and grayscale of a gate-regulated stacked structure light-emitting device. Background Art

[0002] The light-emitting devices in optoelectronic displays are an important component of display devices. They present images or information by emitting light. The light-emitting principle of many light-emitting devices is based on the fact that after power is turned on, electrons and holes combine in the light-emitting layer to form excitons, and when the excitons recombine, they release energy and emit light, such as QLED (quantum dot light-emitting diodes) and OLED (organic light-emitting diodes). These light-emitting devices have the advantages of rich color performance, high contrast, fast response speed, wide viewing angle, energy saving and environmental protection. The luminous efficiency or luminous brightness of these light-emitting devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to obtain the optimal device efficiency. This experimental process requires a lot of time, materials and labor costs. Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these light-emitting devices to achieve the regulation of carrier mobility, and the regulation of luminous efficiency or luminous brightness can be achieved, which helps to improve the luminous efficiency or luminous brightness.

[0003] However, experiments on improving the luminous efficiency of light-emitting devices through gate control have found that there is a certain relationship between the applied gate voltage and the improved luminous efficiency. The greater the applied gate voltage, the greater the improved luminous efficiency. Instead, there is an optimal luminous gate voltage that maximizes the improvement in luminous efficiency. Therefore, how to determine the optimal luminous gate voltage corresponding to different luminous currents has become a difficult problem. Summary of the invention

[0004] The applicant has found through research that in the process of determining the best light-emitting grid voltage detection, the applied grid voltage will not only affect the light-emitting efficiency, but also the light-emitting intensity, which will cause the light-emitting intensity corresponding to the original light-emitting current, or the grayscale value, to deviate.

[0005] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a gate-controlled light-emitting gate voltage and grayscale anchoring method for a stacked structure light-emitting device, aiming to determine the gate voltage that can achieve an ideal light-emitting efficiency for each grayscale.

[0006] To achieve the above-mentioned purpose, the present invention discloses a light-emitting gate voltage and grayscale anchoring method for a gate-regulated stacked structure light-emitting device, which is applied to a gate-regulated stacked structure light-emitting device, wherein the light-emitting device comprises a light-emitting unit, a gate insulating layer, and a gate regulation electrode; the light-emitting unit comprises a first electrode, a light-emitting functional layer, and a second electrode in sequence; the first electrode and the second electrode apply a first power supply, the first power supply is used to supply power to the light-emitting unit to emit light, the gate regulation electrode applies a gate voltage relative to the first electrode and / or the second electrode, the gate voltage is used to construct an electric field to regulate the mobility of carriers in the light-emitting unit and adjust the light-emitting efficiency of the light-emitting unit; the method comprises:

[0007] Step S1, controlling the first power supply to apply a test current to the light-emitting device; maintaining the test current, so that the gate control electrode applies a plurality of different test gate voltages to the first electrode and / or the second electrode, and collecting the luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages;

[0008] Step S2, performing data fitting on each of the test gate voltages and the corresponding luminous efficiency, to obtain a first functional relationship diagram of the luminous efficiency corresponding to the test current following the gate voltage change;

[0009] Step S3, obtaining an inflection point gate voltage from the first functional relationship diagram, and determining the inflection point gate voltage as the light-emitting gate voltage of the test current;

[0010] Step S4, repeating steps S1 to S3 to obtain a plurality of light-emitting gate voltages corresponding to the test currents; performing data fitting on each of the test currents and the light-emitting gate voltages corresponding thereto to obtain a second functional relationship diagram between the test current and the light-emitting gate voltage;

[0011] Step S5, performing data fitting on each of the test currents and the luminous brightness under the corresponding light-emitting gate voltage, to obtain a third functional relationship diagram between the test current under the corresponding light-emitting gate voltage and the grayscale value;

[0012] Step S6: Obtain standard current and standard gate voltage corresponding to each standard grayscale value of the light-emitting device according to the second function relationship diagram and the third function relationship diagram.

[0013] Optionally, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power source, and the majority carriers of the light-emitting device are electrons, the step S1 includes:

[0014] Controlling the first power supply to apply a test current to the light emitting device;

[0015] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the second electrode;

[0016] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0017] Optionally, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power source, and the majority carriers of the light-emitting device are holes, the step S1 includes:

[0018] Controlling the first power supply to apply a test current to the light emitting device;

[0019] Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the first electrode;

[0020] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0021] Optionally, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power source, and the majority carriers of the light-emitting device are holes, the step S1 includes:

[0022] Controlling the first power supply to apply a test current to the light emitting device;

[0023] Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the second electrode;

[0024] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0025] Optionally, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power source, and the majority carriers of the light-emitting device are electrons, the step S1 includes:

[0026] Controlling the first power supply to apply a test current to the light emitting device;

[0027] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the first electrode;

[0028] The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

[0029] Optionally, the light-emitting device is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

[0030] Optionally, the light-emitting device is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0031] Optionally, during use of the light emitting device, the method further comprises:

[0032] Obtaining a required grayscale value of the light-emitting device; and obtaining a standard current and a standard gate voltage of the required grayscale value according to the required grayscale value;

[0033] A standard current of the required grayscale value is applied to the light emitting device, and at the same time, the gate regulating electrode applies a standard gate voltage of the required grayscale value to the first electrode or the second electrode.

[0034] Optionally, obtaining the inflection point gate voltage from the first functional relationship diagram in step S3 includes:

[0035] The maximum luminous efficiency is obtained from the first functional relationship diagram, and the gate voltage corresponding to the maximum luminous efficiency is determined as the inflection point gate voltage.

[0036] Optionally, step S6 includes:

[0037] According to the third functional relationship diagram, obtaining a standard current corresponding to each standard grayscale value of the light-emitting device;

[0038] According to the second functional relationship diagram, a standard gate voltage corresponding to the standard current is obtained; wherein the standard gate voltage is a light-emitting gate voltage of the standard current.

[0039] Beneficial effects of the present invention: 1. In the process of preparing a gate-regulated stacked structure light-emitting device, the present invention detects the optimal light-emitting gate voltage of different test currents to obtain the relationship between the power supply current in the light-emitting device and the optimal light-emitting gate voltage corresponding thereto, and then collects the luminous brightness of each power supply current under the optimal gate voltage to anchor its corresponding grayscale value. The present invention can obtain the optimal gate voltage corresponding to each grayscale value of the current, so that the light-emitting device can achieve the maximum improvement in luminous efficiency during the gate voltage regulation process, and effectively save energy. On the other hand, the present invention effectively solves the problem of grayscale value deflection in the original gate voltage regulation by first determining the relationship between the power supply current and the optimal light-emitting gate voltage corresponding thereto, and then determining the grayscale corresponding to each power supply current under the optimal gate voltage. 2. The present invention connects the point data into a smooth line by fitting each functional relationship, thereby making the inflection point gate voltage determination more accurate and allowing some data that has not been measured to be reflected through these functional relationships. In this way, the light-emitting gate voltage and grayscale value can be anchored more accurately.

[0040] In summary, the present invention determines the optimal gate voltage of each power supply current on the basis of ensuring that the grayscale value corresponds accurately to the power supply current, so that the luminous efficiency of the light-emitting device is improved to reach an ideal state, saving energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a flow chart of a method for gate-controlled light-emitting gate voltage and grayscale anchoring of a stacked structure light-emitting device provided by a specific embodiment of the present invention;

[0042] Figure 2 is a schematic diagram of a first functional relationship between gate voltage and luminous efficiency provided by a specific embodiment of the present invention;

[0043] Figure 3 It is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in a first specific embodiment of the present invention;

[0044] Figure 4 is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in a second specific embodiment of the present invention;

[0045] Figure 5 is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in a third specific embodiment of the present invention;

[0046] Figure 6 It is a schematic structural diagram of a gate-controlled stacked structure light-emitting device provided in the fourth specific embodiment of the present invention. DETAILED DESCRIPTION

[0047] The present invention discloses a method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device. Those skilled in the art can refer to the content of this article and appropriately improve the technical details. It should be particularly pointed out that all similar replacements and modifications are obvious to those skilled in the art, and they are all considered to be included in the present invention. The method and application of the present invention have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0048] The applicant has found through research that in the process of determining the best light-emitting grid voltage detection, the applied grid voltage will not only affect the light-emitting efficiency, but also the light-emitting intensity, which will cause the light-emitting intensity corresponding to the original light-emitting current, or the grayscale value, to deviate.

[0049] Therefore, the embodiment of the present invention provides a method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device, which is applied to a gate-controlled stacked structure light-emitting device, wherein the light-emitting device includes a light-emitting unit, a gate insulating layer, and a gate-controlled electrode; the light-emitting unit includes a first electrode, a light-emitting functional layer, and a second electrode in sequence; the first electrode and the second electrode apply a first power source, the first power source is used to supply power to the light-emitting unit for emission, and the gate-controlled electrode applies a gate voltage relative to the first electrode and / or the second electrode, the gate voltage is used to construct an electric field to control the mobility of carriers in the light-emitting unit and adjust the light-emitting efficiency of the light-emitting unit. Figure 1 As shown, the method includes:

[0050] Step S1, control the first power supply to apply a test current to the light-emitting device; maintain the test current, so that the gate control electrode applies multiple different test gate voltages to the first electrode and / or the second electrode, and collect the luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage.

[0051] It should be noted that the gate insulating layer is generally provided between the gate regulating electrode and the light emitting functional layer. When the test current is maintained, the test current should be kept constant.

[0052] In this specific embodiment, the light emitting device can be a quantum dot light emitting diode, and the light emitting functional layer includes a hole transport layer, a quantum dot light emitting layer and an electron transport layer.

[0053] In another specific embodiment, the light-emitting device is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0054] Step S2, performing data fitting on each test gate voltage and its corresponding luminous efficiency, and obtaining a first functional relationship diagram of the luminous efficiency corresponding to the test current following the gate voltage change.

[0055] It should be noted that the more gate voltages are tested, the more accurate the first function relationship diagram is. The first function relationship diagram can reflect the relationship between some untested gate voltages and luminous efficiency, so as to ensure that the inflection point gate voltage determined later is more in line with the optimal luminous gate voltage.

[0056] In this specific embodiment, the first functional relationship diagram can be as follows: Figure 2 As shown, the gate voltage generally does not include the direction, so the absolute value of the gate voltage is used, and EQE is the luminous efficiency.

[0057] Step S3, obtaining the inflection point gate voltage from the first functional relationship diagram, and determining the inflection point gate voltage as the light-emitting gate voltage of the test current.

[0058] It should be noted that as the gate voltage increases (generally speaking, the value increases, not including the direction), the luminous efficiency will first increase and then decrease. The gate voltage corresponding to the inflection point (or maximum value) between the increase and decrease is the luminous gate voltage. In the embodiment of the present invention, the luminous gate voltage is the gate voltage corresponding to the maximum luminous efficiency.

[0059] In this specific embodiment, obtaining the inflection point gate voltage from the first function relationship diagram in step S3 includes:

[0060] The maximum luminous efficiency is obtained from the first functional relationship diagram, and the gate voltage corresponding to the maximum luminous efficiency is determined as the inflection point gate voltage.

[0061] In this specific embodiment, the gate voltage increases or decreases at preset intervals, while ensuring that the luminous efficiency first increases and then decreases, or first decreases and then increases, during the increase or decrease process.

[0062] Step S4, repeating steps S1 to S3 to obtain light-emitting gate voltages corresponding to a plurality of different test currents; performing data fitting on each test current and its corresponding light-emitting gate voltage to obtain a second functional relationship diagram between the test current and the light-emitting gate voltage.

[0063] It should be noted that during the repetitive process, the test current applied each time is different.

[0064] In this specific embodiment, during the repetition process, the applied test current increases or decreases at a preset interval, with a minimum value of 0 and a maximum value greater than the current corresponding to the original maximum grayscale value. Because the test current and the light-emitting gate voltage are point data, fitting them helps to reflect some data that are not measured.

[0065] Step S5, performing data fitting on each test current and the luminous brightness under the corresponding light emitting gate voltage, and obtaining a third functional relationship diagram between the test current under the corresponding light emitting gate voltage and the grayscale value.

[0066] It should be noted that there is a direct linear relationship between the grayscale value and the luminous brightness: the higher the grayscale value, the higher the corresponding brightness; the lower the grayscale value, the lower the corresponding brightness. This relationship enables the brightness of the image to be accurately controlled by adjusting the grayscale value, and is one of the important means of adjusting the image contrast and brightness in image processing. Therefore, in the embodiment of the present invention, the functional relationship between the test current and the luminous brightness can be obtained by fitting the test current and the luminous brightness.

[0067] It is worth mentioning that the reason for fitting the third function is the same as that for fitting the second function.

[0068] Step S6: Obtain standard current and standard gate voltage corresponding to each standard grayscale value of the light-emitting device according to the second function relationship diagram and the third function relationship diagram.

[0069] The standard gate voltage is the light-emitting gate voltage of the standard current.

[0070] It should be noted that the role of fitting the second function relationship diagram and the third function relationship diagram can be reflected in determining the standard current and standard gate voltage corresponding to the standard grayscale value. For example, if it is determined that the standard current corresponding to the 214 grayscale is not the test current, then the corresponding standard current and standard gate voltage cannot be found, but the corresponding standard current and standard gate voltage can be obtained through the second function relationship diagram and the third function relationship diagram.

[0071] In this specific embodiment, step S6 includes:

[0072] According to the third functional relationship diagram, a standard current corresponding to each standard grayscale value of the light-emitting device is obtained;

[0073] According to the second functional relationship diagram, a standard gate voltage corresponding to the standard current is obtained; wherein the standard gate voltage is a light-emitting gate voltage of the standard current.

[0074] After the light emitting device leaves the factory, during the use of the light emitting device, the method further includes:

[0075] Obtaining a required grayscale value of the light-emitting device; and obtaining a standard current and a standard gate voltage of the required grayscale value according to the required grayscale value;

[0076] A standard current of a required grayscale value is applied to the light emitting device, and at the same time, the gate regulating electrode applies a standard gate voltage of the required grayscale value to the first electrode or the second electrode.

[0077] In the first specific embodiment, if Figure 3 As shown, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes:

[0078] Controlling the first power supply to apply a test current to the light emitting device;

[0079] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the second electrode;

[0080] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0081] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0082] In the second specific embodiment, Figure 4 As shown, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes:

[0083] Controlling the first power supply to apply a test current to the light emitting device;

[0084] Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the first electrode;

[0085] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0086] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0087] In the third specific embodiment, Figure 5 As shown, when the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power supply, and the majority carriers of the light-emitting device are holes, step S1 includes:

[0088] Controlling the first power supply to apply a test current to the light emitting device;

[0089] Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the second electrode;

[0090] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0091] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0092] In the fourth specific embodiment, Figure 6 As shown, when the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power supply, and the majority carriers of the light-emitting device are electrons, step S1 includes:

[0093] Controlling the first power supply to apply a test current to the light emitting device;

[0094] Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the first electrode;

[0095] The luminous efficiency and luminous brightness of the light-emitting device under each test gate voltage are collected.

[0096] It should be noted that when the OLED / QLED light-emitting functional layer of this embodiment is QLED, the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer. When the OLED / QLED light-emitting functional layer of this embodiment is OLED, the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0097] In the process of preparing a gate-controlled stacked structure light-emitting device, the embodiment of the present invention detects the optimal light-emitting gate voltage for different test currents to obtain the relationship between the power supply current in the light-emitting device and the optimal light-emitting gate voltage corresponding thereto, and then collects the luminous brightness of each power supply current under the optimal gate voltage to anchor the corresponding grayscale value. The embodiment of the present invention can obtain the optimal gate voltage for the current corresponding to each grayscale value, so that the light-emitting device can achieve the maximum improvement in luminous efficiency during the gate voltage control process, effectively saving energy. On the other hand, the embodiment of the present invention effectively solves the problem of grayscale value deflection in the original gate voltage control by first determining the relationship between the power supply current and the optimal light-emitting gate voltage corresponding thereto, and then determining the grayscale corresponding to each power supply current under the optimal gate voltage.

[0098] The embodiment of the present invention connects the point data into a smooth line by fitting various functional relationships, thereby making the inflection point grid voltage determination more accurate and allowing some unmeasured data to be reflected through these functional relationships. In this way, the light-emitting grid voltage and grayscale value can be anchored more accurately.

[0099] In summary, the embodiments of the present invention determine the optimal gate voltage of each power supply current on the basis of ensuring accurate correspondence between the grayscale value and the power supply current, so that the luminous efficiency of the light-emitting device is improved to reach an ideal state, thereby saving energy.

[0100] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0101] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0102] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device, applied to a gate-controlled stacked structure light-emitting device, characterized in that: The light-emitting device comprises a light-emitting unit, a gate insulating layer, and a gate regulating electrode; the light-emitting unit comprises a first electrode, a light-emitting functional layer, and a second electrode in sequence; a first power source is applied to the first electrode and the second electrode, the first power source is used to supply power to the light-emitting unit for emitting light, the gate regulating electrode applies a gate voltage relative to the first electrode and / or the second electrode, the gate voltage is used to construct an electric field to regulate the mobility of carriers in the light-emitting unit and adjust the luminous efficiency of the light-emitting unit; the method comprises: Step S1, controlling the first power supply to apply a test current to the light-emitting device; maintaining the test current, so that the gate control electrode applies a plurality of different test gate voltages to the first electrode and / or the second electrode, and collecting the luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages; Step S2, performing data fitting on each of the test gate voltages and the corresponding luminous efficiency, to obtain a first functional relationship diagram of the luminous efficiency corresponding to the test current following the gate voltage change; Step S3, obtaining an inflection point gate voltage from the first functional relationship diagram, and determining the inflection point gate voltage as the light-emitting gate voltage of the test current; Step S4, repeating steps S1 to S3 to obtain a plurality of light-emitting gate voltages corresponding to the test currents; performing data fitting on each of the test currents and the light-emitting gate voltages corresponding thereto to obtain a second functional relationship diagram between the test current and the light-emitting gate voltage; Step S5, performing data fitting on each of the test currents and the luminous brightness under the corresponding light-emitting gate voltage, to obtain a third functional relationship diagram between the test current under the corresponding light-emitting gate voltage and the grayscale value; Step S6: Obtain standard current and standard gate voltage corresponding to each standard grayscale value of the light-emitting device according to the second function relationship diagram and the third function relationship diagram.

2. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power source, and the majority carriers of the light-emitting device are electrons, the step S1 includes: Controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the second electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

3. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power source, and the majority carriers of the light-emitting device are holes, the step S1 includes: Controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the first electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

4. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the second electrode, the second electrode is connected to the negative electrode of the first power source, and the majority carriers of the light-emitting device are holes, the step S1 includes: Controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current so that the gate control electrode applies a plurality of different negative test gate voltages to the second electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

5. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: When the gate control electrode is located on one side of the first electrode, the first electrode is connected to the positive electrode of the first power source, and the majority carriers of the light-emitting device are electrons, the step S1 includes: Controlling the first power supply to apply a test current to the light emitting device; Maintaining the test current so that the gate control electrode applies a plurality of different positive test gate voltages to the first electrode; The luminous efficiency and luminous brightness of the light-emitting device under each of the test gate voltages are collected.

6. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: The light emitting device is a quantum dot light emitting diode, and the light emitting functional layer comprises a hole transport layer, a quantum dot light emitting layer and an electron transport layer.

7. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: The light emitting device is an organic light emitting diode, and the light emitting functional layer comprises a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer and an electron injection layer.

8. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: During use of the light emitting device, the method further comprises: Obtaining a required grayscale value of the light-emitting device; and obtaining a standard current and a standard gate voltage of the required grayscale value according to the required grayscale value; A standard current of the required grayscale value is applied to the light emitting device, and at the same time, the gate regulating electrode applies a standard gate voltage of the required grayscale value to the first electrode or the second electrode.

9. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: Obtaining the inflection point gate voltage from the first functional relationship diagram in step S3 includes: The maximum luminous efficiency is obtained from the first functional relationship diagram, and the gate voltage corresponding to the maximum luminous efficiency is determined as the inflection point gate voltage.

10. The method for anchoring the light-emitting gate voltage and grayscale of a gate-controlled stacked structure light-emitting device according to claim 1, characterized in that: The step S6 comprises: According to the third functional relationship diagram, obtaining a standard current corresponding to each standard grayscale value of the light-emitting device; According to the second functional relationship diagram, a standard gate voltage corresponding to the standard current is obtained; wherein the standard gate voltage is a light-emitting gate voltage of the standard current.

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