Rapid deposition chamber of atomic layer deposition equipment

Abstract

The invention discloses a rapid deposition chamber of atomic layer deposition equipment, and relates to the technical field of atomic layer deposition. The device comprises a supporting seat, a processing table is fixedly connected to the top of the supporting seat, a deposition cavity is formed in the top face of the processing table in a press fit mode, a wafer positioning assembly used for limiting a wafer is arranged in the middle of the top face of the processing table, and a gas inlet pipe used for introducing reaction gas is fixedly connected to the front side of the deposition cavity in an inserted mode. A tail gas filtering assembly is arranged on the rear side of the deposition cavity, a quick release assembly is installed on the surface of the tail gas filtering assembly, a lifting control assembly used for controlling the deposition cavity to move in the vertical direction is installed on the top face of the supporting base, and a sealing assembly is arranged at the bottom of the deposition cavity. According to the wafer limiting device, the effect of effectively limiting a wafer conveniently is achieved in the use process, and wafer displacement cannot be caused in the sealing process and the deposition process of the deposition cavity, so that the uniformity of a formed deposition layer is guaranteed.

Description

Technical Field

[0001] The invention relates to the technical field of atomic layer deposition, and in particular to a rapid deposition chamber of an atomic layer deposition device. Background Art

[0002] Atomic layer deposition is a method that can deposit materials on the surface of a substrate layer by layer in the form of a single atomic film. However, during the atomic layer deposition process, the chemical reaction of a new layer of atomic film is directly related to the previous layer. This method allows only one layer of atoms to be deposited in each reaction. The film layer made by the atomic layer deposition process has the advantages of high purity and good uniformity. Therefore, the atomic layer deposition process is widely used in the manufacture of semiconductor dynamic buffers to meet the process requirements of small size and large aspect ratio of semiconductor dynamic buffers; atomic layer deposition is a method of forming a deposited film by alternately passing gaseous precursor pulses into the reactor and chemically adsorbing and reacting on the deposition substrate. When the precursors reach the surface of the deposition substrate, they will chemically adsorb on its surface and undergo surface reactions. The atomic layer deposition reactor needs to be cleaned with an inert gas between the precursor pulses.

[0003] The Chinese patent document with the authorization announcement number CN220887675U discloses a deposition chamber of an atomic layer deposition device with good sealing performance, including a deposition chamber, which is a circular tubular structure, with an upper cover plate disposed on the top of the deposition chamber, and a vacuum pump connected to the inside of the deposition chamber fixedly installed on the side wall of the deposition chamber. With respect to the above technical scheme, the following defects still exist: when the prior art closes the deposition chamber, it is necessary to rotate and move the lower bottom plate so that it can be threadedly connected to the deposition chamber, but before atomic layer deposition, it is necessary to place the wafer on the lower bottom plate, and during the movement and rotation process, the wafer will be displaced, thereby affecting the uniformity of the subsequent deposition layer.

[0004] For this purpose, a fast deposition chamber of an atomic layer deposition device is proposed. Summary of the invention

[0005] The purpose of the present invention is to solve the problems mentioned in the above background technology. The present invention provides a rapid deposition chamber of an atomic layer deposition device.

[0006] In order to achieve the above-mentioned purpose, the present invention specifically adopts the following technical solutions:

[0007] A rapid deposition chamber of an atomic layer deposition device comprises a support seat, a processing table is fixedly connected to the top of the support seat, a deposition cavity is pressed onto the top surface of the processing table, a wafer positioning assembly for limiting the position of a wafer is arranged in the middle of the top surface of the processing table, an air inlet pipe for introducing reaction gas is fixedly plugged into the front side of the deposition cavity, an exhaust gas filter assembly is arranged on the rear side of the deposition cavity, a quick-release assembly is installed on the surface of the exhaust gas filter assembly, a lifting control assembly for controlling the vertical movement of the deposition cavity is installed on the top surface of the support seat, and a sealing assembly is arranged at the bottom of the deposition cavity.

[0008] Furthermore, the lifting control assembly includes a motor, and the motor is fixedly installed in the middle of the top surface of the support seat, the output end of the motor is fixedly connected with a threaded column, the surface of the threaded column is threadedly connected with a connecting frame, and the connecting frame is movably plugged into the processing table, and the end of the connecting frame is fixedly connected to the deposition chamber.

[0009] Furthermore, the wafer positioning assembly includes a fixing frame, and the fixing frame is fixedly connected to the top surface of the processing table, and a tray is fixedly connected to the surface of the fixing frame.

[0010] Furthermore, a first vacuum pump is fixedly installed on the bottom surface of the processing table, an air suction end of the first vacuum pump is fixedly connected to an air guide pipe, an end of the air guide pipe is fixedly connected to a soft suction cup, and the soft suction cup is fixedly installed on the bottom of the tray.

[0011] Furthermore, the exhaust gas filtering assembly includes an outlet pipe, and the outlet pipe is fixedly connected to the deposition chamber, the end of the outlet pipe is fixedly connected to a processing box, and the processing box is fixedly installed on the top surface of the deposition chamber, the inner wall of the processing box is movably connected with a filter element, the top surface of the filter element is fixedly connected with a pressure plate, and the pressure plate is fitted with the top surface of the processing box, the front of the processing box is fixedly connected with an exhaust pipe, the top surface of the deposition chamber is fixedly installed with a second vacuum pump, and the suction end of the second vacuum pump is fixedly connected to the exhaust pipe.

[0012] Furthermore, the quick-release assembly includes a mounting tube, and the mounting tube is fixedly connected to the processing box, the inner wall of the mounting tube is fixedly connected to a spring, the end of the spring is fixedly connected to a mounting rod, and the mounting rod is movably connected to the inner wall of the mounting tube, the surface of the mounting rod is fixedly connected to an insertion rod, the surface of the pressure plate is provided with a positioning hole, and the inner wall of the positioning hole is movably connected to the insertion rod.

[0013] Furthermore, the sealing assembly includes an inner ring, and the inner ring is fixedly connected to the top surface of the processing table, the inner wall of the deposition chamber is fixedly connected with a retaining ring, and the bottom surface of the retaining ring is in contact with the top surface of the inner ring, the top surface of the processing table is provided with an annular groove, and the inner wall of the annular groove is movably connected to the bottom of the deposition chamber, and the bottom surface of the deposition chamber is fixedly connected with a sealing ring.

[0014] The beneficial effects of the present invention are as follows:

[0015] The wafer to be processed is placed on the surface of the wafer positioning assembly, and the wafer is limited by the wafer positioning assembly. Subsequently, the deposition chamber is controlled to descend by the lifting control assembly, so that the deposition chamber is pressed onto the top surface of the processing table. The processing table and the deposition chamber together form a closed space. The sealing of the contact position between the processing table and the deposition chamber is ensured by the closed assembly. The reaction gas is introduced into the deposition chamber through the air inlet pipe to perform atomic layer deposition on the wafer. The incompletely reacted gas is discharged through the exhaust gas filter assembly, and the exhaust gas filter assembly can be used to effectively filter the gas to avoid pollution to the environment. The exhaust gas filter assembly can also be quickly disassembled and replaced by the quick-release assembly to ensure the filtering effect of the exhaust gas filter assembly. During use, the effect of facilitating the effective limitation of the wafer is achieved. During the sealing process of the deposition chamber and the deposition process, the wafer will not shift, thereby ensuring the uniformity of the deposition layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention;

[0017] Figure 2 It is a front cross-sectional view of the structure of the present invention;

[0018] Figure 3 is a front cross-sectional view of the deposition chamber structure of the present invention;

[0019] Figure 4 The wafer positioning component structure of the present invention;

[0020] Figure 5 It is a front cross-sectional view of the exhaust gas filter assembly structure of the present invention;

[0021] Figure 6 It is a front cross-sectional view of the locking assembly structure of the present invention;

[0022] 1. Support seat; 2. Processing table; 3. Deposition chamber; 4. Lifting control assembly; 401. Motor; 402. Threaded column; 403. Connecting frame; 5. Wafer positioning assembly; 501. Fixing frame; 502. Tray; 503. First vacuum pump; 504. Air guide tube; 505. Soft suction cup; 6. Air inlet pipe; 7. Exhaust gas filter assembly; 701. Air outlet pipe; 702. Processing box; 703. Filter element; 704. Press plate; 705. Second vacuum pump; 706. Exhaust pipe; 8. Quick release assembly; 801. Mounting tube; 802. Spring; 803. Mounting rod; 804. Insert rod; 805. Positioning hole; 9. Inner ring; 10. Retaining ring; 11. Annular groove; 12. Sealing ring. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0024] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. In addition, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0026] The electrical components mentioned in this article are all connected to an external main controller and 220V mains electricity, and the main controller can be a conventional known device for controlling a computer or the like.

[0027] In the description of the embodiments of the present invention, it should be noted that the terms "inside", "outside", "upper", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the inventive product is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0028] like Figures 1 to 6As shown, a rapid deposition chamber of an atomic layer deposition device comprises a support seat 1, a processing table 2 is fixedly connected to the top of the support seat 1, a deposition chamber 3 is pressed onto the top surface of the processing table 2, a wafer positioning assembly 5 for limiting the wafer is arranged in the middle of the top surface of the processing table 2, an air inlet pipe 6 for introducing reaction gas is fixedly inserted into the front side of the deposition chamber 3, an exhaust gas filter assembly 7 is arranged on the rear side of the deposition chamber 3, a quick release assembly 8 is installed on the surface of the exhaust gas filter assembly 7, a lifting control assembly 4 for controlling the vertical movement of the deposition chamber 3 is installed on the top surface of the support seat 1, and a sealing assembly is arranged at the bottom of the deposition chamber 3. More specifically, the wafer to be processed is placed on the surface of the wafer positioning assembly 5, and the wafer is limited by the wafer positioning assembly 5, and then the deposition chamber 3 is controlled to descend by the lifting control assembly 4, so that the deposition chamber 3 is pressed on the top surface of the processing table 2, and the processing table 2 and the deposition chamber 3 together form a closed space. The sealing of the contact position between the processing table 2 and the deposition chamber 3 is ensured by the closed assembly, and the reaction gas is introduced into the deposition chamber 3 through the air inlet pipe 6 to perform atomic layer deposition processing on the wafer. The incompletely reacted gas is discharged through the exhaust gas filter assembly 7, and the exhaust gas filter assembly 7 can be used to effectively filter the gas to avoid pollution to the environment. The exhaust gas filter assembly 7 can also be quickly disassembled and replaced through the quick-release assembly 8 to ensure the filtering effect of the exhaust gas filter assembly 7.

[0029] The lifting control assembly 4 includes a motor 401, and the motor 401 is fixedly installed in the middle of the top surface of the support seat 1. The output end of the motor 401 is fixedly connected with a threaded column 402, and the surface of the threaded column 402 is threadedly connected with a connecting frame 403, and the connecting frame 403 is movably plugged with the processing table 2, and the end of the connecting frame 403 is fixedly connected with the deposition chamber 3. It should be noted that the motor 401 is operated to drive the threaded column 402 to rotate, and the connecting frame 403 will be driven to move under the action of the thread, and the connecting frame 403 will pull the deposition chamber 3 to move downward, and finally the deposition chamber 3 is pressed on the top surface of the processing table 2, and the deposition chamber 3 and the processing table 2 cooperate to form a closed chamber, and the atomic layer deposition can be performed on the wafer.

[0030] The wafer positioning assembly 5 includes a fixing frame 501, and the fixing frame 501 is fixedly connected to the top surface of the processing table 2, and a tray 502 is fixedly connected to the surface of the fixing frame 501. More specifically, the wafer to be processed is placed inside the tray 502, and the soft suction cup 505 is used to initially limit the wafer.

[0031] A first vacuum pump 503 is fixedly installed on the bottom surface of the processing table 2, and an air guide tube 504 is fixedly connected to the air suction end of the first vacuum pump 503, and a soft suction cup 505 is fixedly connected to the end of the air guide tube 504, and the soft suction cup 505 is fixedly installed on the bottom of the tray 502. It should be noted that after the wafer is placed in the tray 502, it will fit with the top of the soft suction cup 505, and the first vacuum pump 503 can be operated to extract the air between the soft suction cup 505 and the wafer in cooperation with the air guide tube 504, thereby generating a vacuum in the soft suction cup 505, and the soft suction cup 505 can be used to adsorb and position the wafer.

[0032] The tail gas filter assembly 7 includes an outlet pipe 701, and the outlet pipe 701 is fixedly connected to the deposition chamber 3, the end of the outlet pipe 701 is fixedly connected to a processing box 702, and the processing box 702 is fixedly installed on the top surface of the deposition chamber 3, the inner wall of the processing box 702 is movably plugged with a filter element 703, the top surface of the filter element 703 is fixedly connected with a pressing plate 704, and the pressing plate 704 is in contact with the top surface of the processing box 702, the front of the processing box 702 is fixedly plugged with an exhaust pipe 706, and the top surface of the deposition chamber 3 is fixedly installed with a second vacuum pump 705, and the suction end of the second vacuum pump 705 is fixedly connected to the exhaust pipe 706. More specifically, the second vacuum pump 705 generates suction force, and the reaction gas will be discharged from the inside of the deposition chamber 3 through the outlet pipe 701, and the gas will be filtered by the filter element 703 after passing through the inside of the processing box 702, and finally discharged through the exhaust pipe 706, thereby achieving pollution-free discharge.

[0033] The quick-release assembly 8 includes a mounting tube 801, and the mounting tube 801 is fixedly connected to the processing box 702. The inner wall of the mounting tube 801 is fixedly connected with a spring 802, and the end of the spring 802 is fixedly connected with a mounting rod 803, and the mounting rod 803 is movably plugged with the inner wall of the mounting tube 801. The surface of the mounting rod 803 is fixedly connected with an insertion rod 804, and the surface of the pressure plate 704 is provided with a positioning hole 805, and the inner wall of the positioning hole 805 is movably plugged with the insertion rod 804. It should be noted that by pulling the mounting rod 803, the elastic force of the spring 802 is overcome, so that the mounting rod 803 slides along the inner wall of the mounting tube 801, and the mounting rod 803 will drive the insertion rod 804 to move, so that the insertion rod 804 is separated from the inner wall of the positioning hole 805, and the limit of the pressure plate 704 can be released. By pulling the pressure plate 704 upward, the pressure plate 704 and the filter element 703 can be disassembled and replaced.

[0034] The sealing assembly includes an inner ring 9, and the inner ring 9 is fixedly connected to the top surface of the processing table 2. A retaining ring 10 is fixedly connected to the inner wall of the deposition chamber 3, and the bottom surface of the retaining ring 10 is in contact with the top surface of the inner ring 9. An annular groove 11 is provided on the top surface of the processing table 2, and the inner wall of the annular groove 11 is movably plugged with the bottom of the deposition chamber 3. A sealing ring 12 is fixedly connected to the bottom surface of the deposition chamber 3. More specifically, when the deposition chamber 3 drops to the lowest position, the bottom of the deposition chamber 3 just fits into the inner wall of the annular groove 11, and the sealing ring 12 is used to seal the contact position between the annular groove 11 and the deposition chamber 3. At this time, the retaining ring 10 is just pressed on the surface of the inner ring 9, and the inner ring 9 and the retaining ring 10 cooperate to play a sealing role again. The double sealing structure can prevent the leakage of reaction gas during the deposition process.

[0035] In summary: the wafer to be processed is placed on the surface of the wafer positioning component 5, and the wafer is limited by the wafer positioning component 5, and then the deposition chamber 3 is controlled to descend by the lifting control component 4, so that the deposition chamber 3 is pressed on the top surface of the processing table 2, and the processing table 2 and the deposition chamber 3 together form a closed space. The sealing of the contact position between the processing table 2 and the deposition chamber 3 is ensured by the closed component, and the reaction gas is introduced into the deposition chamber 3 through the air inlet pipe 6 to perform atomic layer deposition processing on the wafer. The incompletely reacted gas is discharged through the exhaust gas filter component 7, and the exhaust gas filter component 7 can be used to effectively filter the gas to avoid pollution to the environment. The exhaust gas filter component 7 can also be quickly disassembled and replaced by the quick-release component 8 to ensure the filtering effect of the exhaust gas filter component 7. During use, the effect of facilitating effective limiting of the wafer is achieved. During the sealing process of the deposition chamber and the deposition process, the wafer will not be shifted, thereby ensuring the uniformity of the deposition layer.

[0036] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention. These changes and improvements fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the attached claims and their equivalents.

Claims

1. A rapid deposition chamber of an atomic layer deposition device, characterized in that: The invention comprises a support seat (1), the top of which is fixedly connected to a processing table (2), the top surface of which is pressed with a deposition chamber (3), a wafer positioning assembly (5) for limiting the position of a wafer is arranged in the middle of the top surface of the processing table (2), an air inlet pipe (6) for introducing reaction gas is fixedly inserted at the front side of the deposition chamber (3), an exhaust gas filter assembly (7) is arranged at the rear side of the deposition chamber (3), a quick-release assembly (8) is installed on the surface of the exhaust gas filter assembly (7), a lifting control assembly (4) for controlling the vertical movement of the deposition chamber (3) is installed on the top surface of the support seat (1), and a sealing assembly is arranged at the bottom of the deposition chamber (3).

2. The rapid deposition chamber of an atomic layer deposition device according to claim 1, characterized in that: The lifting control assembly (4) comprises a motor (401), and the motor (401) is fixedly mounted on the middle of the top surface of the support seat (1), the output end of the motor (401) is fixedly connected to a threaded column (402), the surface of the threaded column (402) is threadedly connected to a connecting frame (403), and the connecting frame (403) is movably plugged into the processing table (2), and the end of the connecting frame (403) is fixedly connected to the deposition chamber (3).

3. The rapid deposition chamber of an atomic layer deposition device according to claim 1, characterized in that: The wafer positioning assembly (5) comprises a fixing frame (501), and the fixing frame (501) is fixedly connected to the top surface of the processing table (2), and a tray (502) is fixedly connected to the surface of the fixing frame (501).

4. The rapid deposition chamber of an atomic layer deposition device according to claim 3, characterized in that: A first vacuum pump (503) is fixedly installed on the bottom surface of the processing table (2); an air suction end of the first vacuum pump (503) is fixedly connected to an air guide pipe (504); an end of the air guide pipe (504) is fixedly connected to a soft suction cup (505); and the soft suction cup (505) is fixedly installed on the bottom of the tray (502).

5. The rapid deposition chamber of an atomic layer deposition device according to claim 1, characterized in that: The exhaust gas filter assembly (7) comprises an exhaust pipe (701), and the exhaust pipe (701) is fixedly connected to the deposition chamber (3); the end of the exhaust pipe (701) is fixedly connected to a processing box (702), and the processing box (702) is fixedly installed on the top surface of the deposition chamber (3); the inner wall of the processing box (702) is movably connected to a filter element (703); the top surface of the filter element (703) is fixedly connected to a pressure plate (704), and the pressure plate (704) is in contact with the top surface of the processing box (702); the front of the processing box (702) is fixedly connected to an exhaust pipe (706); the top surface of the deposition chamber (3) is fixedly installed with a second vacuum pump (705), and the suction end of the second vacuum pump (705) is fixedly connected to the exhaust pipe (706).

6. The rapid deposition chamber of an atomic layer deposition device according to claim 5, characterized in that: The quick-release assembly (8) comprises a mounting tube (801), and the mounting tube (801) is fixedly connected to the processing box (702); the inner wall of the mounting tube (801) is fixedly connected to a spring (802); the end of the spring (802) is fixedly connected to a mounting rod (803), and the mounting rod (803) is movably plugged into the inner wall of the mounting tube (801); the surface of the mounting rod (803) is fixedly connected to an insertion rod (804); a positioning hole (805) is provided on the surface of the pressure plate (704), and the inner wall of the positioning hole (805) is movably plugged into the insertion rod (804).

7. The rapid deposition chamber of an atomic layer deposition device according to claim 2, characterized in that: The sealing assembly comprises an inner ring (9), and the inner ring (9) is fixedly connected to the top surface of the processing table (2); the inner wall of the deposition chamber (3) is fixedly connected to a retaining ring (10), and the bottom surface of the retaining ring (10) is in contact with the top surface of the inner ring (9); the top surface of the processing table (2) is provided with an annular groove (11), and the inner wall of the annular groove (11) is movably plugged into the bottom of the deposition chamber (3); and the bottom surface of the deposition chamber (3) is fixedly connected to a sealing ring (12).

Images