Thin film deposition method of groove and semiconductor device

Abstract

The invention relates to a thin film deposition method of a groove and a semiconductor device. The method comprises the following steps: providing a substrate; forming a target groove in the substrate; forming a first deposition thin film layer in the target groove under a first deposition condition; performing first plasma treatment on the first deposition thin film layer, and forming a first target deposition thin film layer in the target groove; forming a second deposition thin film layer on the first target deposition thin film layer under a second deposition condition; performing second plasma treatment on the second deposition thin film layer, and forming a second target deposition thin film layer on the first target deposition thin film layer; forming a third deposition thin film layer on the second target deposition thin film layer under a third deposition condition; and performing third plasma treatment on the third deposition thin film layer, and forming a third target deposition thin film layer on the second target deposition thin film layer. According to the invention, the stability and compactness of the film in the groove can be improved at least.

Description

Technical Field

[0001] The present disclosure relates to the technical field of integrated circuit manufacturing, and in particular to a groove thin film deposition method and a semiconductor device. Background Art

[0002] With the continuous development of integrated circuit technology nodes, the semiconductor trench filling process faces long-term challenges. After entering the 45-nanometer technology node, the High Aspect Ratio Process (HARP) was widely used in shallow trench isolation (STI). This technology not only meets the needs of gap filling in technology nodes, but also has a good promoting effect on the performance of semiconductor devices due to its inherent tensile stress.

[0003] However, the thin film deposited by the HARP process also has many disadvantages. Since the reaction precursor is TEOS, TEOS has a fast surface migration rate at the reaction front due to its physical adsorption characteristics, and can form physical adsorption with the substrate, with the lowest adhesion coefficient. The use of TEOS has problems such as incomplete reaction and many active bond structures remaining, which makes it very easy for the material properties to change when exposed to an open environment. For example, the stress will decrease a lot over time due to the absorption of water vapor. In addition, the thin film formed by the HARP process is usually loose and soft, and the stability and density of the film are poor. Summary of the invention

[0004] Based on this, it is necessary to provide a groove thin film deposition method and a semiconductor device to address the above technical problems, which can at least improve the stability and density of the thin film in the groove.

[0005] In order to achieve the above-mentioned purpose and other purposes, in a first aspect, the present disclosure provides a method for thin film deposition of a groove, comprising: providing a substrate; forming a target groove in the substrate; forming a first deposited thin film layer in the target groove under a first deposition condition; performing a first plasma treatment on the first deposited thin film layer to form a first target deposited thin film layer in the target groove; forming a second deposited thin film layer on the first target deposited thin film layer under a second deposition condition; performing a second plasma treatment on the second deposited thin film layer to form a second target deposited thin film layer on the first target deposited thin film layer; forming a third deposited thin film layer on the second target deposited thin film layer under a third deposition condition; performing a third plasma treatment on the third deposited thin film layer to form a third target deposited thin film layer on the second target deposited thin film layer; wherein the thickness of the first deposited thin film layer is lower than the thickness of the second deposited thin film layer and / or the third deposited thin film layer, and the first target deposited thin film layer, the second target deposited thin film layer and the third target deposited thin film layer completely fill the target groove.

[0006] In the thin film deposition method for the groove in the above-mentioned embodiment, after each time the thin film is filled in the groove, the deposited thin film layer is treated by plasma treatment, and a thinner first deposited thin film layer (i.e., nucleation layer) is formed in the groove. Therefore, the embodiment of the present disclosure can at least improve the stability and density of the thin film in the groove.

[0007] In one embodiment, the first plasma treatment includes a first nitrogen plasma treatment and a first oxygen plasma treatment, wherein forming a first target deposited thin film layer in the groove includes: performing a first nitrogen plasma treatment on the first deposited thin film layer under a first treatment condition to form a first intermediate thin film layer in the target groove; performing a first oxygen plasma treatment on the first intermediate thin film layer under a second treatment condition to form a first target deposited thin film layer in the target groove.

[0008] In the thin film deposition method for the groove in the above embodiment, the nucleation layer in contact with the groove is treated by plasma treatment with nitrogen and oxygen, so that a first target deposited thin film layer with a thin thickness and good stability and density can be obtained.

[0009] In one embodiment, the first deposition condition is: reaction temperature is 530° C.-550° C., reaction time is 80 s-168 s, and flow rate of chemical deposition gas is 9 sccm-11 sccm.

[0010] In the thin film deposition method for the groove in the above embodiment, a first deposited thin film layer with a relatively thin thickness is formed by a relatively slow deposition speed, a relatively long deposition time and a relatively low chemical deposition gas, thereby forming a foundation for subsequent processing.

[0011] In one of the embodiments, the first processing condition is: reaction temperature of 300°C-600°C, reaction pressure of 2 Torr-8Torr, nitrogen flow rate of 800 sccm-7000sccm, reaction power of 10W-1500W, and reaction time of 5s-20s; the second processing condition is: reaction temperature of 300°C-600°C, reaction pressure of 2 Torr-10Torr, N2 flow rate of 800-1000sccm, reaction power of 10W-2500W, and reaction time of 8s-25s.

[0012] In the trench thin film deposition method in the above embodiment, by limiting the processing conditions, the first target deposited thin film layer formed after the plasma treatment of the first deposited thin film layer has better stability and density.

[0013] In one embodiment, the second plasma treatment includes a second nitrogen plasma treatment and a second oxygen plasma treatment, wherein a second target deposited thin film layer is formed in the groove, including: performing a second nitrogen plasma treatment on the second deposited thin film layer under a third processing condition to form a second intermediate thin film layer in the target groove; performing a second oxygen plasma treatment on the second intermediate thin film layer under a fourth processing condition to form a second target deposited thin film layer in the groove.

[0014] In the thin film deposition method for the groove in the above embodiment, the second deposited thin film layer is treated by plasma treatment with nitrogen and oxygen, so that a second target deposited thin film layer with a thinner thickness and better stability and density can be obtained.

[0015] In one of the embodiments, the second deposition condition is: reaction temperature is 530℃-550℃, and reaction time is 60s-142s; the third processing condition is: processing temperature is 300℃-600℃, processing pressure is 2 Torr-8Torr, nitrogen flow rate is 800 sccm-7000sccm, processing power is 10W-2500W, and reaction time is 9S-16s; the fourth processing condition is: processing temperature is 300℃-600℃, processing pressure is 2 Torr-10Torr, nitrogen flow rate is 800 sccm-2000sccm, processing power is 10W-3500W, and reaction time is 14s-40s.

[0016] In the thin film deposition method for the trench in the above embodiment, the reaction conditions are restricted so that the trench is filled at a lower deposition rate to ensure that the second target deposited thin film layer with sufficient thickness can be filled.

[0017] In one embodiment, the third plasma treatment includes a third nitrogen plasma treatment and a third oxygen plasma treatment; wherein, forming a third target deposited thin film layer in the target groove includes: performing a third nitrogen plasma treatment on the third deposited thin film layer under a fifth treatment condition to form a third intermediate thin film layer in the target groove; performing a third oxygen plasma treatment on the third intermediate thin film layer under a sixth treatment condition to form a third target deposited thin film layer in the groove.

[0018] In the thin film deposition method for the groove in the above embodiment, the third deposited thin film layer is treated by plasma treatment with nitrogen and oxygen, so that a third target deposited thin film layer with a thinner thickness and better stability and density can be obtained.

[0019] In one of the embodiments, the third deposition condition is: the deposition temperature is 530℃-550℃, and the deposition time is 100s-210s; the fifth processing condition is: the processing temperature is 300℃-600℃, the processing pressure is 2 Torr-8Torr, the nitrogen flow rate is 800 sccm-7000sccm, the processing power is 10W-3500W, and the deposition time is 2s-40s; the sixth processing condition is: the processing temperature is 300℃-600℃, the processing pressure is 2 Torr-10Torr, the nitrogen flow rate is 800 sccm-2000sccm, the processing power is 10W-4500W, and the reaction time is 30s-70s.

[0020] In the groove thin film deposition method in the above embodiment, by limiting the reaction conditions, the reaction time in the third deposition condition is increased to ensure that the third target deposited thin film layer fills the groove, thereby ensuring that the third target deposited thin film layer of sufficient thickness can be filled.

[0021] In one embodiment, the reaction gas of the first deposition condition, the second deposition condition and / or the third deposition condition includes a strong oxidizing gas and a chemical deposition gas; wherein a first ratio of the strong oxidizing gas to the chemical deposition gas under the first deposition condition and the second deposition condition is greater than a second ratio of the strong oxidizing gas to the chemical deposition gas under the third deposition condition.

[0022] In the thin film deposition method for the groove in the above embodiment, by limiting the ratio of strong oxidizing gas to chemical deposition gas under different deposition conditions, the target deposition layer closer to the groove surface has higher stability and better density, making it easier to form a nucleation layer inside the groove.

[0023] In the second aspect, the embodiments of the present disclosure also provide a semiconductor device, including: a substrate; a target groove, located in the substrate and forming an opening on the top of the substrate; a first target deposited thin film layer, located in the target groove and covering the target groove; a second target deposited thin film layer, located on the first target deposited thin film layer; a third target deposited thin film layer, located on the second target deposited thin film layer; wherein the first target deposited thin film layer, the second target deposited thin film layer and the third target deposited thin film layer completely fill the target groove, and at least can improve the stability and density of the thin film in the groove. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 A schematic diagram of a process of a thin film deposition method for a groove provided in an embodiment of the present application;

[0026] Figure 2 It is a schematic structural diagram of a semiconductor device having a first target deposited thin film layer provided in an embodiment of the present application;

[0027] Figure 3 It is a schematic structural diagram of a semiconductor device having a second target deposited thin film layer provided in an embodiment of the present application;

[0028] Figure 4 It is a schematic structural diagram of a semiconductor device having a third target deposited thin film layer provided in one embodiment of the present application.

[0029] Description of reference numerals:

[0030] 101, target groove; 102, first target deposited thin film layer; 103, third substrate structure; 104, second substrate structure; 105, first substrate structure; 201, second target deposited thin film layer; 301, third target deposited thin film layer. DETAILED DESCRIPTION

[0031] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.

[0033] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0034] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0035] When used herein, the singular forms "a", "an" and " / the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of features, integers, steps, operations, elements and / or components can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0036] Embodiments of the invention are described herein with reference to cross-sectional views which are schematic representations of ideal embodiments (and intermediate structures) of the present disclosure, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the present disclosure should not be limited to the particular shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shape of the region of the device, and do not limit the scope of the present disclosure.

[0037] See also Figure 1-Figure 4 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present application in a schematic manner. The illustrations only show the components related to the present application rather than being drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0038] Please continue reading Figure 1 As an example, one aspect of the present application provides a method for depositing a thin film in a groove, comprising:

[0039] S1000 . Provide a substrate.

[0040] The substrate includes a front layer structure.

[0041] In step S1000, the front layer structure can be used to make a semiconductor device, and the substrate can be used to provide support for the front layer structure. The substrate can be made of semiconductor material, insulating material, conductor material or any combination thereof. The substrate can be a single-layer structure or a multi-layer structure. For example, the substrate can be a silicon substrate, a silicon germanium substrate, a silicon germanium carbon substrate, a silicon carbide substrate, a gallium arsenide substrate, an indium arsenide substrate, an indium phosphide substrate or other III / V semiconductor substrates or II / VI semiconductor substrates. Or, for example, the substrate can be a layered substrate including silicon / silicon carbide, silicon on insulator or silicon germanium on insulator. Therefore, the type of substrate should not limit the scope of protection of the present disclosure.

[0042] S2000 , forming a target trench 101 in a substrate.

[0043] S3000 , forming a first deposition thin film layer in the target trench 101 under a first deposition condition.

[0044] S4000 , performing a first plasma treatment on the first deposited thin film layer to form a first target deposited thin film layer 102 in the target trench 101 .

[0045] S5000 , forming a second deposited thin film layer on the first target deposited thin film layer 102 under a second deposition condition.

[0046] S6000 , performing a second plasma treatment on the second deposited thin film layer to form a second target deposited thin film layer 201 on the first target deposited thin film layer 102 .

[0047] S7000 , forming a third deposited thin film layer on the second target deposited thin film layer 201 under a third deposition condition.

[0048] S8000 , performing a third plasma treatment on the third deposited thin film layer to form a third target deposited thin film layer 301 on the second target deposited thin film layer 201 .

[0049] In the above-mentioned embodiment, in the thin film deposition method of the groove in the above-mentioned embodiment, after each filling of the thin film in the groove, the deposited thin film layer is treated by plasma treatment, and a thinner first deposited thin film layer (i.e., nucleation layer) is formed in the groove. Therefore, the embodiment of the present disclosure can at least improve the stability and density of the thin film in the groove.

[0050] In some embodiments, the reaction gas of the first deposition condition, the second deposition condition, and / or the third deposition condition includes a strong oxidizing gas and a chemical deposition gas.

[0051] Wherein, a first ratio of the strong oxidizing gas to the chemical deposition gas under the first deposition condition and the second deposition condition is greater than a second ratio of the strong oxidizing gas to the chemical deposition gas under the third deposition condition.

[0052] In the thin film deposition method for the groove in the above embodiment, by limiting the ratio of strong oxidizing gas to chemical deposition gas under different deposition conditions, the target deposition layer closer to the groove surface has higher stability and better density, making it easier to form a nucleation layer inside the groove.

[0053] In step S1000, please refer to Figure 2 , Figure 2 1 is a schematic diagram of a semiconductor device having a first target deposited thin film layer 102 provided in an embodiment of the present application. As an example, Figure 2 A possible substrate structure is given in FIG. 1 , where the substrate includes: a first substrate structure 105 , a second substrate structure 104 and a third substrate structure 103 .

[0054] As an example, the multilayer structure in the substrate may be a silicon (Si) substrate, a gallium arsenide (GaAs) substrate, a silicon carbide (SiC) substrate, a sapphire (Al 2 O 3 ) substrate, or it can be germanium (Ge), indium phosphide (InP), zinc selenide (ZnSe), etc.

[0055] The second substrate structure 104 is located on the second substrate structure 104 , and the third substrate structure 103 is located on the second substrate structure 104 .

[0056] It should be understood that this application only provides one possible substrate structure, and this application does not limit the number of layers, shape, thickness, etc. of the substrate.

[0057] In step S2000, please continue to refer to Figure 2 , a target trench 101 is formed in the substrate.

[0058] In step S3000 , a first deposited thin film layer may be formed in the target trench 101 based on a thin film deposition process.

[0059] Among them, the thin film deposition process can be a high aspect ratio process (High Aspect Ratio Process, referred to as HARP), which can achieve uniform, void-free oxide deposition in structures with high aspect ratios. The HARP deposition process can achieve good coverage on complex structures and ensure that the thickness of the deposited layer is uniform and continuous. This is crucial to ensuring the electrical performance and reliability of the device. The HARP process is usually carried out at a relatively low temperature, which helps to reduce the impact of high temperature on other sensitive materials or layers. The HARP process is usually achieved through modified chemical vapor deposition techniques such as PECVD or LP-CVD. Specific gas precursors and reaction conditions are used to control the deposition rate and the physical properties of the oxide.

[0060] For example, when manufacturing CMOS devices, the HARP process is often used to fill shallow trench isolation. Due to the high aspect ratio of STI trenches, the HARP process is required to ensure that the oxide can completely fill these trenches to achieve effective device isolation.

[0061] The steps of the HARP deposition process include: first, selecting suitable silane (such as TEOS) and oxide precursor gases. These precursors will undergo a chemical reaction in the reaction chamber to deposit silicon dioxide (SiO 2) and other oxides; secondly, the flow rate of the reaction gas, the chamber temperature and the pressure need to be adjusted to optimize the deposition rate and material properties. Low temperature and high flow conditions usually help to improve the uniformity and filling capacity of the deposition; finally, the oxide is deposited in the substrate and trenches by plasma enhanced chemical vapor deposition (PECVD) or low pressure chemical vapor deposition (LP-CVD). The key to the HARP process is its excellent filling ability, which can effectively avoid the formation of voids.

[0062] In step S3000, the first deposition conditions are: reaction temperature is 530°C-550°C, reaction time is 80s-168s, and flow rate of chemical deposition gas is 9sccm-11sccm.

[0063] As an example, the reaction temperature under the first reaction condition may be 530° C., 535° C., 540° C., 545° C., 550° C., and the like.

[0064] As an example, the reaction time under the first reaction condition can be 80 s, 90 s, 115 s, 122 s, 146 s, 160 s, 168 s, and the like.

[0065] As an example, the flow rate of the chemical deposition gas may be 9 sccm, 10 sccm, 11 sccm, and so on.

[0066] Here, taking TEOS as an example, the flow rate of the chemical deposition gas under the first reaction condition of the present application is relatively small. The purpose is to maintain a very high O3 / TEOS ratio at the initial stage of deposition during the TEOS ramp up process, and obtain a very thin nucleation layer at a slower speed.

[0067] In the thin film deposition method for the groove in the above embodiment, a first deposited thin film layer with a relatively thin thickness is formed by a relatively slow deposition speed, a relatively long deposition time and a relatively low chemical deposition gas, thereby forming a foundation for subsequent processing.

[0068] In step S4000 , the first plasma treatment includes a first nitrogen plasma treatment and a first oxygen plasma treatment.

[0069] Among them, forming a first target deposited thin film layer 102 in the groove includes: performing a first nitrogen plasma treatment on the first deposited thin film layer under a first processing condition to form a first intermediate thin film layer in the target groove 101; performing a first oxygen plasma treatment on the first intermediate thin film layer under a second processing condition to form a first target deposited thin film layer 102 in the target groove 101.

[0070] In the thin film deposition method for the groove in the above embodiment, the nucleation layer in contact with the groove is treated by plasma treatment with nitrogen and oxygen, so that the first target deposited thin film layer 102 with thin thickness, good stability and density can be obtained.

[0071] The first processing conditions are as follows: reaction temperature is 300° C.-600° C., reaction pressure is 2 Torr-8 Torr, nitrogen flow rate is 800 sccm-7000 sccm, reaction power is 10W-1500W, and reaction time is 5s-20s.

[0072] The second processing conditions are as follows: reaction temperature is 300°C-600°C, reaction pressure is 2 Torr-10Torr, N2 flow rate is 800-1000sccm, reaction power is 10W-2500W, and reaction time is 8s-25s.

[0073] As an example, the reaction temperature under the first process condition may be 300° C., 350° C., 4000° C., 550° C., 600° C., and the like.

[0074] As an example, the reaction pressure under the first process condition may be 2 Torr, 4 Torr, 7 Torr, 8 Torr, and so on.

[0075] As an example, the nitrogen flow rate under the first process condition may be 800 sccm, 1500 sccm, 3000 sccm, 5000 sccm, 6600 sccm, 7000 sccm, etc.

[0076] As an example, the reaction power under the first processing condition can be 10 W, 120 W, 300 W, 500 W, 610 W, 800 W, 1000 W, 1500 W, 2000 W, 2500 W, etc.

[0077] As an example, the reaction time under the first processing condition can be 5s, 7s, 10s, 15s, 20s, etc.

[0078] As an example, the reaction temperature under the second process condition may be 300° C., 350° C., 400° C., 500° C., 600° C., or the like.

[0079] As an example, the reaction pressure under the second process condition may be 2 Torr, 5 Torr, 8 Torr, 10 Torr, and so on.

[0080] As an example, the N2 flow rate under the second process condition may be 800 sccm, 900 sccm, 1000 sccm, and so on.

[0081] As an example, the reaction power under the second processing condition can be 10 W, 120 W, 300 W, 500 W, 610 W, 800 W, 1000 W, 1100 W, 1300 W, 1500 W, and so on.

[0082] As an example, the reaction time under the second processing condition may be 8 s, 10 s, 15 s, 20 s, 25 s, and so on.

[0083] See also Figure 2 , a first target deposited thin film layer 102 is formed in the target groove 101 , and the first target deposited thin film layer 102 fills the gap on the surface of the entire target groove 101 .

[0084] In step S5000, the second deposition conditions are: reaction temperature is 530° C.-550° C., and reaction time is 60 s-142 s.

[0085] As an example, the reaction temperature under the second deposition condition may be 530° C., 540° C., 550° C., and so on.

[0086] As an example, the reaction time under the second deposition condition may be 60 s, 70 s, 85 s, 93 s, 110 s, 135 s, 142 s, and so on.

[0087] In step S6000 , the second plasma treatment includes a second nitrogen plasma treatment and a second oxygen plasma treatment.

[0088] Among them, forming a second target deposited thin film layer 201 in the groove includes: performing a second nitrogen plasma treatment on the second deposited thin film layer under a third processing condition to form a second intermediate thin film layer in the target groove 101; performing a second oxygen plasma treatment on the second intermediate thin film layer under a fourth processing condition to form a second target deposited thin film layer 201 in the groove.

[0089] Specifically, the third processing conditions are: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-8 Torr, nitrogen flow rate of 800 sccm-7000 sccm, processing power of 10 W-2500 W, and reaction time of 9S-16s.

[0090] Specifically, the fourth processing conditions are: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-10 Torr, nitrogen flow rate of 800 sccm-2000 sccm, processing power of 10 W-3500 W, and reaction time of 14 s-40 s.

[0091] As an example, the reaction temperature under the third process condition may be 300° C., 350° C., 4000° C., 550° C., 600° C., or the like.

[0092] As an example, the process pressure under the third process condition may be 2 Torr, 4 Torr, 7 Torr, 10 Torr, and so on.

[0093] As an example, the nitrogen flow rate under the third process condition may be 800 sccm, 1500 sccm, 3000 sccm, 5000 sccm, 6600 sccm, 7000 sccm, etc.

[0094] As an example, the reaction power under the third processing condition may be 10 W, 120 W, 300 W, 500 W, 610 W, 800 W, 1000 W, 1500 W, 2000 W, 2500 W, and so on.

[0095] As an example, the reaction time under the third processing condition may be 9 s, 10 s, 12 s, 15 s, 16 s, and so on.

[0096] As an example, the reaction temperature under the fourth process condition may be 300° C., 350° C., 4000° C., 550° C., 600° C., or the like.

[0097] As an example, the process pressure under the fourth process condition may be 2 Torr, 4 Torr, 7 Torr, 10 Torr, and so on.

[0098] As an example, the nitrogen flow rate under the fourth process condition may be 800 sccm, 900 sccm, 1000 sccm, 1500 sccm, 2000 sccm, and so on.

[0099] As an example, the reaction power under the fourth processing condition can be 10 W, 120 W, 300 W, 500 W, 610 W, 800 W, 1000 W, 1500 W, 2000 W, 2500 W, 3000 W, 3500 W, and so on.

[0100] As an example, the reaction time under the fourth processing condition can be 14s, 20s, 30s, 35s, 40s, etc.

[0101] As an example, see Figure 3 , Figure 3 Figure 3 It is a schematic structural diagram of a semiconductor device provided with a second target deposition thin film layer 201 formed thereon in an embodiment of the present application. The second target deposition thin film layer 201 is formed on the first target deposition layer in the trench.

[0102] In step S7000, the third deposition condition is: the deposition temperature is 530°C-550°C, and the deposition time is 100s-210s.

[0103] As an example, the deposition temperature under the third deposition condition may be 530° C., 540° C., 550° C., and so on.

[0104] As an example, the deposition time under the third deposition condition may be 100 s, 130 s, 180 s, 190 s, 210 s, and so on.

[0105] In step S8000 , the third plasma treatment includes a third nitrogen plasma treatment and a third oxygen plasma treatment.

[0106] Among them, forming a third target deposited thin film layer 301 in the target groove 101 includes: performing a third nitrogen plasma treatment on the third deposited thin film layer under a fifth processing condition to form a third intermediate thin film layer in the target groove 101; performing a third oxygen plasma treatment on the third intermediate thin film layer under a sixth processing condition to form a third target deposited thin film layer 301 in the groove.

[0107] Specifically, the fifth processing condition is: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-8 Torr, nitrogen flow rate of 800 sccm-7000 sccm, processing power of 10 W-3500 W, and deposition time of 20 s-40 s.

[0108] Specifically, the sixth processing condition is: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-10 Torr, nitrogen flow rate of 800 sccm-2000 sccm, processing power of 10 W-4500 W, and reaction time of 30 s-70 s.

[0109] As an example, the processing temperature under the fifth processing condition may be 300° C., 350° C., 4000° C., 550° C., 600° C., or the like.

[0110] As an example, the reaction pressure under the fifth process condition may be 2 Torr, 4 Torr, 7 Torr, 8 Torr, and so on.

[0111] As an example, the nitrogen flow rate under the fifth process condition may be 800 sccm, 1500 sccm, 3000 sccm, 5000 sccm, 6600 sccm, 7000 sccm, etc.

[0112] As examples, the reaction power under the fifth processing condition may be 10 W, 120 W, 300 W, 500 W, 610 W, 800 W, 1000 W, 1500 W, 2000 W, 2500 W, 3000 W, 3500 W, and so on.

[0113] As an example, the reaction time under the fifth processing condition may be 20 s, 27 s, 30 s, 35 s, 40 s, and so on.

[0114] As an example, the processing temperature under the sixth processing condition may be 300° C., 350° C., 4000° C., 550° C., 600° C., or the like.

[0115] As an example, the reaction pressure under the sixth process condition may be 2 Torr, 4 Torr, 7 Torr, 8 Torr, 10 Torr, and so on.

[0116] As an example, the nitrogen flow rate under the sixth process condition may be 800 sccm, 900 sccm, 1000 sccm, 1300 sccm, 1600 sccm, 2000 sccm, etc.

[0117] As examples, the reaction power under the sixth processing condition can be 10 W, 120 W, 300 W, 500 W, 610 W, 800 W, 1000 W, 1500 W, 2000 W, 2500 W, 3000 W, 3500 W, 4000 W, 4500 W, and so on.

[0118] As an example, the reaction time under the sixth processing condition can be 30s, 40s, 50s, 60s, 70s, etc.

[0119] As an example, see Figure 4 , Figure 4 Schematic diagram of the structure of a semiconductor device provided in an embodiment of the present application with a third target deposited thin film layer 301. The third target deposited thin film layer 301 is formed in the groove and on the second target deposited layer, and the first target deposited thin film layer 102, the second target deposited thin film layer 201, and the third target deposited thin film layer 301 together fill the target groove 101.

[0120] The embodiment of the present disclosure provides a method for depositing a thin film in a groove, which utilizes the process principle that after the HARP film is subjected to plasma treatment with N2, the film can be placed in a state of relatively high tensile stress. At the same time, after the HARP film is subjected to plasma treatment with O2, a relatively dense oxide layer is formed on the surface, which has a relatively good isolation effect on external water vapor, effectively improving the stability of the film, and thus obtaining the process principle of a stable HARP film in a state of relatively high tensile stress. Therefore, the embodiment of the present disclosure can at least improve the stability and density of the film in the groove.

[0121] The embodiment of the present disclosure also provides a semiconductor device, including: a substrate; a target groove 101, which is located in the substrate and forms an opening on the top of the substrate; a first target deposited thin film layer 102, which is located in the target groove 101 and covers the target groove 101; a second target deposited thin film layer 201, which is located on the first target deposited thin film layer 102; a third target deposited thin film layer 301, which is located on the second target deposited thin film layer 201; wherein the first target deposited thin film layer 102, the second target deposited thin film layer 201 and the third target deposited thin film layer 301 completely fill the target groove 101, and can at least improve the stability and density of the thin film in the groove.

[0122] The technical features of the above embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features of the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification. The above embodiments only express several implementation methods of the present disclosure, and their descriptions are relatively specific and detailed, but they cannot be understood as limitations on the scope of the patent application. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present disclosure, several variations and improvements can be made, which all belong to the protection scope of the present disclosure. Therefore, the protection scope of the patent disclosed in this disclosure shall be based on the attached claims.

Claims

1. A method for depositing a thin film in a groove, characterized in that: The method comprises: providing a substrate; forming a target trench in the substrate; Under a first deposition condition, forming a first deposition thin film layer in the target trench; Performing a first plasma treatment on the first deposited thin film layer to form a first target deposited thin film layer in the target groove; forming a second deposited thin film layer on the first target deposited thin film layer under a second deposition condition; performing a second plasma treatment on the second deposited thin film layer to form a second target deposited thin film layer on the first target deposited thin film layer; Under a third deposition condition, forming a third deposition thin film layer on the second target deposition thin film layer; performing a third plasma treatment on the third deposited thin film layer to form a third target deposited thin film layer on the second target deposited thin film layer; The thickness of the first deposited film layer is lower than the thickness of the second deposited film layer and / or the third deposited film layer, and the first target deposited film layer, the second target deposited film layer and the third target deposited film layer completely fill the target groove.

2. The method according to claim 1, characterized in that The first plasma treatment includes a first nitrogen plasma treatment and a first oxygen plasma treatment, Wherein, forming a first target deposition thin film layer in the groove comprises: performing a first nitrogen plasma treatment on the first deposited thin film layer under a first treatment condition to form a first intermediate thin film layer in the target trench; The first intermediate film layer is subjected to a first oxygen plasma treatment under a second treatment condition to form a first target deposited film layer in the target trench.

3. The method according to claim 1, characterized in that The first deposition conditions are: reaction temperature of 530° C.-550° C., reaction time of 80 s-168 s, and flow rate of chemical deposition gas of 9 sccm-11 sccm.

4. The method according to claim 2, characterized in that: The first processing conditions are: reaction temperature of 300°C-600°C, reaction pressure of 2 Torr-8Torr, nitrogen flow rate of 800 sccm-7000 sccm, reaction power of 10W-1500W, and reaction time of 5s-20s; The second processing conditions are: reaction temperature of 300°C-600°C, reaction pressure of 2 Torr-10Torr, N2 flow rate of 800-1000sccm, reaction power of 10W-2500W, and reaction time of 8s-25s.

5. The method according to claim 1, characterized in that The second plasma treatment includes a second nitrogen plasma treatment and a second oxygen plasma treatment, Wherein, forming a second target deposition thin film layer in the groove comprises: performing a second nitrogen plasma treatment on the second deposited thin film layer under a third treatment condition to form a second intermediate thin film layer in the target trench; The second intermediate film layer is subjected to a second oxygen plasma treatment under a fourth treatment condition to form a second target deposited film layer in the groove.

6. The method according to claim 5, characterized in that The second deposition conditions are: reaction temperature of 530°C-550°C, reaction time of 60s-142s; The third processing conditions are: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-8 Torr, nitrogen flow rate of 800 sccm-7000 sccm, processing power of 10W-2500W, and reaction time of 9S-16s; The fourth processing conditions are: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-10 Torr, nitrogen flow rate of 800 sccm-2000 sccm, processing power of 10 W-3500 W, and reaction time of 14 s-40 s.

7. The method according to claim 1, characterized in that The third plasma treatment includes a third nitrogen plasma treatment and a third oxygen plasma treatment; Wherein, forming a third target deposited thin film layer in the target groove comprises: performing a third nitrogen plasma treatment on the third deposited thin film layer under a fifth treatment condition to form a third intermediate thin film layer in the target trench; The third intermediate film layer is subjected to a third oxygen plasma treatment under a sixth treatment condition to form a third target deposited film layer in the groove.

8. The method according to claim 7, characterized in that The third deposition condition is: deposition temperature is 530° C.-550° C., deposition time is 100 s-210 s; The fifth processing condition is: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-8 Torr, nitrogen flow rate of 800 sccm-7000 sccm, processing power of 10W-3500W, and deposition time of 20s-40s; The sixth processing condition is: processing temperature of 300° C.-600° C., processing pressure of 2 Torr-10 Torr, nitrogen flow rate of 800 sccm-2000 sccm, processing power of 10 W-4500 W, and reaction time of 30 s-70 s.

9. The method according to claim 1, characterized in that: The reaction gas of the first deposition condition, the second deposition condition and / or the third deposition condition comprises a strong oxidizing gas and a chemical deposition gas; Wherein, a first ratio of the strong oxidizing gas to the chemical deposition gas under the first deposition condition and the second deposition condition is greater than a second ratio of the strong oxidizing gas to the chemical deposition gas under the third deposition condition.

10. A semiconductor device, characterized in that: include: substrate; A target trench is located in the substrate and forms an opening at the top of the substrate; A first target deposited thin film layer is located in the target groove and covers the target groove; a second target deposited thin film layer, located on the first target deposited thin film layer; a third target deposited thin film layer, located on the second target deposited thin film layer; Wherein, the first target deposited thin film layer, the second target deposited thin film layer and the third target deposited thin film layer completely fill the target groove.

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