Wafer annealing device and annealing method

Abstract

The invention relates to the technical field of semiconductors, and provides a wafer annealing device and method, and the device comprises a lamp bead unit, a bearing unit, and a laser unit. The lamp bead unit comprises a plurality of lamp beads which are densely arranged, each lamp bead is divided into a plurality of lamp bead groups, and each lamp bead group is independently controlled; the bearing unit is used for bearing a wafer, and the bearing unit is parallel to and directly faces the lamp bead unit; the laser unit is used for emitting laser, and a laser emitting port of the laser unit faces the bearing unit, so that the laser emitted by the laser unit irradiates the wafer on the bearing unit. According to the wafer annealing device, the lamp bead unit is matched with the laser unit, so that the temperature control areas and the adjacent parts of the adjacent temperature control areas can reach the target temperature, and the temperature control uniformity is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer annealing device and an annealing method. Background Art

[0002] Annealing is a common process in semiconductor manufacturing. For example, annealing is usually required after alloying, oxidation or nitriding, ion implantation, doping activation, and gettering. Annealing is used to repair crystal damage and eliminate wafer dislocations and native defects.

[0003] Existing annealing devices usually use densely distributed lamp beads for heating. The lamp beads are divided into several lamp bead groups. All the lamp beads in each lamp bead group are controlled synchronously, and the lamp beads in each lamp bead group are controlled relatively independently. Therefore, multiple independent temperature control zones corresponding to each lamp bead group are formed in the heating chamber. The temperature in the heating chamber is controlled by detecting the temperature in each temperature control zone and controlling the heating power of the lamp beads in each lamp bead group to ensure uniform temperature distribution in the heating chamber.

[0004] In the annealing device of this structure, adjacent temperature control zones interfere with each other in their adjacent areas, so temperature anomalies are likely to occur in the adjacent areas. If the temperature anomalies in the adjacent areas are compensated by adjusting the corresponding lamp bead groups, it will cause temperature anomalies in the remaining areas of the temperature control zone. Therefore, it is difficult to take into account the temperature compensation of the temperature control zone and the adjacent areas of the adjacent temperature control zones. Moreover, if the temperatures at different locations in the same temperature control zone are different, it is also difficult to take into account that the temperatures at different locations are approaching the target temperature by adjusting the temperature through the lamp bead groups corresponding to the temperature control zones. Therefore, this temperature control method makes the temperature uniformity in the entire heating chamber poor.

[0005] Therefore, based on the above technical problems, a wafer annealing device and an annealing method are needed. By improving the annealing device, temperature compensation of the temperature control zone and the adjacent area of ​​the adjacent temperature control zone is taken into account to improve the temperature uniformity in the heating chamber. Summary of the invention

[0006] The object of the present invention is to provide a wafer annealing device and an annealing method, by improving the annealing device to take into account the temperature compensation of the temperature control zone and the adjacent area of ​​the adjacent temperature control zone, so as to improve the temperature uniformity in the heating chamber.

[0007] The present invention provides a wafer annealing device, comprising: a lamp bead unit, a bearing unit and a laser unit;

[0008] The lamp bead unit includes a plurality of densely arranged lamp beads, and each of the lamp beads is divided into a plurality of lamp bead groups;

[0009] The carrying unit is used to carry the wafer, and the carrying unit is parallel to and directly opposite to the lamp bead unit;

[0010] The laser unit is used to emit laser light, and a laser emission port of the laser unit faces the carrying unit, so that the laser light emitted by the laser unit irradiates the wafer on the carrying unit.

[0011] Optionally, the laser emission angle of the laser unit is adjustable; and / or the laser unit is configured to move relative to the carrying unit.

[0012] Optionally, the laser emission power of the laser unit is adjustable.

[0013] Optionally, the lamp bead unit and the laser unit are arranged on two sides of the carrying unit;

[0014] The bearing unit is made of a transparent material, and / or the bearing unit is a hollow structure in the middle.

[0015] Optionally, the lamp bead group includes a circular lamp bead group and multiple annular lamp bead groups surrounding the circular lamp bead group, and each annular lamp bead group is nested in sequence radially outward from the center of the circular lamp bead group, and the central axis of the circular lamp bead group is collinear with the central axis of each annular lamp bead group.

[0016] Optionally, the carrying unit is arranged to rotate.

[0017] Optionally, when the lamp bead group includes a circular lamp bead group, the rotation center axis of the bearing unit is colinear with the center axis of the circular lamp bead group.

[0018] The present invention also provides a wafer annealing method, comprising the following steps:

[0019] Turn on each lamp bead group so that the temperature of the temperature control zone corresponding to each lamp bead group in the heating chamber approaches the target temperature;

[0020] The heating chamber is divided into a plurality of temperature detection zones along a direction parallel to the lamp bead unit, wherein the temperature detection zones include an adjacent detection zone and a non-adjacent detection zone, wherein the adjacent detection zone corresponds to the adjacent part of two adjacent temperature control zones, and the non-adjacent detection zone corresponds to a temperature control zone;

[0021] Detecting the real-time temperature of the wafer in the heating chamber corresponding to the location of each temperature detection zone;

[0022] If the real-time temperature of the wafer position corresponding to a temperature detection zone is greater than the target temperature, the power of the lamp bead group corresponding to the temperature detection zone is reduced;

[0023] If the real-time temperature of the wafer position corresponding to a non-adjacent detection zone is lower than the target temperature, increase the power of the lamp bead group corresponding to the non-adjacent detection zone;

[0024] If the real-time temperature of a wafer position corresponding to an adjacent detection zone is lower than the target temperature, the temperature detection zone is designated as the target area; the laser emitted by the laser unit irradiates the position of the wafer within the target area, so that the temperature of the position approaches the target temperature.

[0025] Optionally, the lamp bead group includes a circular lamp bead group and a plurality of annular lamp bead groups surrounding the circular lamp bead group, each of the annular lamp bead groups is nested in sequence radially outward from the center of the circular lamp bead group, and the central axis of the circular lamp bead group is collinear with the central axis of each of the annular lamp bead groups;

[0026] The temperature detection zone includes a circular temperature detection zone and a plurality of annular temperature detection zones surrounding the circular temperature detection zone. The circular temperature detection zone is collinear with the central axis of each of the annular temperature detection zones and is collinear with the central axis of the circular lamp bead group.

[0027] Optionally, irradiating a position of the wafer in the target area with laser light emitted by the laser unit so that the temperature of the position approaches the target temperature comprises the following steps:

[0028] The laser light emitted by the laser unit is directed to illuminate a certain point of the wafer located in the target area;

[0029] The wafer is rotated so that the rotation center axis of the wafer, the center axis of the wafer itself and the center axis of the circular lamp bead group are collinear.

[0030] With such configuration, the above-mentioned wafer annealing device realizes temperature control through the cooperation of the lamp bead unit and the laser unit. The lamp bead unit serves as the temperature control body, and the laser unit is used to realize local temperature compensation to ensure that each temperature control zone and the adjacent parts of adjacent temperature control zones reach the target temperature, thereby improving the temperature control uniformity in the heating chamber. Moreover, the adjustment method of the lamp bead unit in conjunction with the laser unit is relatively simple in control, and does not require the laser unit to perform complex scanning, thereby simplifying the operation and annealing process. The wafer annealing device is also suitable for temperature compensation when different positions in the same temperature control zone have temperature differences, and the lamp bead unit and the laser unit can flexibly realize temperature compensation.

[0031] The laser unit uses back-side heating to compensate the temperature of the wafer, which does not affect the distribution of front-side lamp beads and the airflow field in the heating chamber, and can prevent the graphic effect caused by the laser unit heating the front side of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of a wafer annealing device according to an embodiment of the present invention;

[0033] Figure 2 This is a schematic structural diagram of a lamp bead unit according to an embodiment of the present invention;

[0034] Figure 3 It is a schematic diagram of the structure of the temperature control area and the temperature detection area according to one embodiment of the present invention;

[0035] Figure 4 A first state diagram of a wafer annealing device according to an embodiment of the present invention;

[0036] Figure 5 FIG. 4 is a second state diagram of a wafer annealing device according to an embodiment of the present invention.

[0037] Among them, in the attached drawings:

[0038] 10-lamp bead unit;

[0039] 20-carrying unit; 21-round lamp bead group; 22-first annular lamp bead group; 23-second annular lamp bead group; 24-third annular lamp bead group; 25-fourth annular lamp bead group; 26-fifth annular lamp bead group; 27-sixth annular lamp bead group;

[0040] 30-Laser unit;

[0041] 40-heating chamber; 41-air inlet; 42-air outlet;

[0042] 50-wafer. DETAILED DESCRIPTION

[0043] The wafer annealing device proposed in the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the accompanying drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0044] As used in the present invention, the singular forms "one", "an" and "the" include plural objects, the term "or" is usually used to include the meaning of "and / or", the term "several" is usually used to include the meaning of "at least one", and the terms "at least two" or "multiple" are usually used to include the meaning of "two or more". In addition, the terms "first", "second" and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second" and "third" can explicitly or implicitly include one or at least two of the features. In addition, as used in the present invention, "installed", "connected", "connected", and one element "set" on another element should be understood in a broad sense, usually only indicating that there is a connection, coupling, matching or transmission relationship between the two elements, and the connection, coupling, matching or transmission between the two elements can be direct or indirect through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below or on one side of another element, unless the content clearly indicates otherwise. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used with respect to the exemplary embodiments as they are shown in the figures, with the upward or upper direction toward the top of the corresponding figure, and the downward or lower direction toward the bottom of the corresponding figure.

[0045] The present embodiment provides a wafer annealing device, comprising: a lamp bead unit 10, a carrier unit 20 and a laser unit 30; the carrier unit 20 is installed in a heating chamber 40, and the heating chamber 40 is provided with an air inlet 41 and an air outlet 42, and gas is introduced into the air inlet 41 and flows out through the air outlet 42 to form an air flow field in the heating chamber 40.

[0046] The lamp bead unit 10 includes a plurality of densely arranged lamp beads. Figure 1 and Figure 2 As shown, the lamp bead unit 10 is a disc-shaped structure composed of densely arranged lamp beads. The above lamp bead structure can be consistent with the lamp bead structure in existing semiconductor devices.

[0047] Combination Figure 2 As shown, each of the lamp beads is divided into a plurality of lamp bead groups, and the lamp bead groups include a circular lamp bead group 21 and a plurality of annular lamp bead groups surrounding the circular lamp bead group 21 .

[0048] The lamp beads within the area with a radius of R1 are a round lamp bead group 21 .

[0049] There are six annular lamp bead groups, the lamp beads in the area between R2 and R1 are the first annular lamp bead group 22, the lamp beads in the area between R3 and R2 are the second annular lamp bead group 23, the lamp beads in the area between R4 and R3 are the third annular lamp bead group 24, the lamp beads in the area between R5 and R4 are the fourth annular lamp bead group 25, the lamp beads in the area between R6 and R5 are the fifth annular lamp bead group 26, and the lamp beads in the area between R7 and R6 are the sixth annular lamp bead group 27. Each of the annular lamp bead groups is nested radially outward from the center of the circular lamp bead group 21, and the central axis of the circular lamp bead group 21 is collinear with the central axis of each of the annular lamp bead groups. The above seven lamp bead groups are in radial contact, so that the lamp beads in the entire lamp bead unit 10 are evenly and densely arranged.

[0050] The seven lamp bead groups are relatively independent and can be controlled separately, and all the lamp beads in each lamp bead group can be controlled synchronously. The control of the lamp beads and each lamp bead group is prior art and will not be described in detail here.

[0051] In this embodiment, each lamp bead group is arranged in a coaxial circular and annular shape to form coaxial circular and annular temperature control zones on the corresponding wafer, which helps to improve the temperature uniformity of wafer annealing.

[0052] Please continue to combine Figure 1 As shown, the carrier unit 20 is located directly below the lamp bead unit 10, and the carrier unit 20 is parallel and flat to the lamp bead unit 10; the lamp beads in the lamp bead unit 10 face the carrier unit 20. The upper surface of the carrier unit 20 is used to carry the wafer 50, so the lamp bead unit 10 heats the wafer 50 carried on the upper surface of the carrier unit 20. The upper surface of the carrier unit 20 can be provided with a vacuum adsorption groove for vacuum adsorption of the wafer. The carrier unit 20 adopts an existing carrier table. The carrier unit 20 is a prior art and will not be described in detail here.

[0053] The carrier unit 20 is coaxially arranged with the lamp bead unit 10. The circular carrier unit 20 combined with the disc-shaped lamp bead unit 10 can be adapted to the annealing heating of circular wafers.

[0054] In this embodiment, the lamp bead unit 10 and the carrier unit 20 are both circular, and their shapes are adapted to the shape of existing wafers. In other alternative embodiments, the lamp bead unit 10 and the carrier unit 20 can be adaptively adjusted based on the change of the wafer shape.

[0055] like Figure 1As shown, the back of the wafer 50 is carried on the carrying unit 20, and the central axis of the wafer 50 and the carrying unit 20 are colinear. The lamp bead unit 10 irradiates the carrying unit 20 downward, so the heating chamber 40 and the wafer 50 are automatically divided into seven temperature control areas, and each temperature control area is adapted to the shape of each lamp bead group.

[0056] like Figure 3 As shown, a temperature control zone having the same shape as each lamp bead group is formed on the wafer 50 . Figure 3 Only three temperature control zones are shown in the figure, wherein temperature control zone A corresponds to the fifth annular lamp bead group 26 with a radius between R6 and R5, and temperature control zone B corresponds to the fourth annular lamp bead group 25 with a radius between R5 and R4.

[0057] The temperature of most areas in the temperature control zone A is relatively uniform and is mainly controlled by the fifth annular lamp bead group 26. The temperature of most areas in the temperature control zone B is relatively uniform and is mainly controlled by the fourth annular lamp bead group 25. However, the temperatures in the adjacent areas of the temperature control zone A and the temperature control zone B will interfere with each other to form a temperature abnormality zone. Since the temperature control zone A and the temperature control zone B are both annular, the temperature abnormality zone C at the adjacent position of the two is usually also annular. For example, the temperature in the area C between the radius R8 and the radius R9 will fluctuate to form a temperature abnormality zone, where R8 is located between R4 and R5, and R9 is located between R5 and R6.

[0058] When the temperature of the area except area C of the temperature control area A is equal to the target temperature, and the temperature of the area except area C of the temperature control area B is equal to the target temperature, and the temperature of area C is low, if the temperature is adjusted by increasing the power of the fourth annular lamp bead group 25 and the fifth annular lamp bead group 26, the temperature of the temperature control area A and the temperature control area B will rise as a whole. When the temperature of area C rises to the target temperature, the temperature of other areas of the temperature control area A and the temperature control area B except area C will also rise and be higher than the target temperature. Therefore, if the temperature control is only performed by the lamp bead unit 10, it is difficult to ensure the uniformity of the temperature on the wafer.

[0059] In this embodiment, a laser unit 30 is introduced, and the laser unit 30 is used to emit laser. The laser emission port of the laser unit 30 faces the carrier unit 20 so that the laser emitted by the laser unit 30 irradiates the wafer 50 on the carrier unit 20 .

[0060] In this embodiment, the laser unit 30 selects a diode laser with adjustable power, with a power of 800W and a maximum temperature of about 1000C. The laser unit 30 achieves controllable temperature compensation by adjusting the power. In addition, the laser unit 30 selects a diode laser with an optical lens zoom lens to adjust the laser spot size, thereby adapting to the temperature regulation of different areas.

[0061] In this embodiment, the laser unit 30 can be driven by a stepper motor or a servo motor to rotate, so as to accurately adjust the laser emission angle, and then adjust the position of the irradiation on the wafer. The angle adjustment is preferably between 0-90 degrees to achieve full coverage of the wafer.

[0062] like Figure 4 As shown, the angle between the laser unit 30 and the horizontal direction is α. When adjusting the position of laser irradiation, the angle between the laser unit 30 and the horizontal direction can be adjusted, for example, the angle can be adjusted to Figure 5 β in the figure is used to move the laser irradiation position toward the middle of the wafer 50, thereby allowing the laser to be irradiated at a specified position.

[0063] In other alternative embodiments, the laser unit 30 may also use an existing laser generator with a built-in laser emission angle adjustment function, or the laser unit 30 may also be driven to move linearly in a direction parallel to the wafer to adjust the irradiation position on the wafer.

[0064] Please continue to refer to Figure 1 As shown, the lamp bead unit 10 and the laser unit 30 are disposed on both sides of the carrying unit 20;

[0065] The lamp bead unit 10 is located above the carrying unit 20 , and the back side of the wafer 50 is carried on the upper surface of the carrying unit 20 . Therefore, the lamp bead unit 10 can heat the front side of the wafer 50 carried on the carrying unit 20 .

[0066] The laser unit 30 is located below the carrier unit 20 and can heat the back side of the wafer 50 carried on the carrier unit 20. In this embodiment, the carrier unit 20 is made of a transparent material (such as glass) so that the laser emitted by the laser unit 30 can be transmitted to the back side of the wafer.

[0067] In other alternative embodiments, the carrying unit 20 may also be a hollow structure in the middle to allow laser transmission.

[0068] The laser unit 30 is located outside the heating chamber 40 and uses back-side heating to compensate the temperature of the wafer, which does not affect the distribution of the lamp beads and the air flow field in the heating chamber 40. It can also prevent the pattern effect caused by the laser unit 30 heating the front side of the wafer.

[0069] In this embodiment, the bearing unit 20 is arranged to rotate, and the bearing unit 20 is a disc-shaped structure, which can be driven to rotate by means of a belt or gear transmission. The rotation center axis of the bearing unit 20 is collinear with the center axis of the circular lamp bead group 21. When the wafer 50 is carried on the bearing unit 20, the center axis of the wafer 50 itself is collinear with the center axis of the bearing unit 20 itself, and the rotation center axis of the bearing unit 20 is collinear with the center axis of the bearing unit 20 itself. Therefore, when the bearing unit 20 rotates, it can drive the wafer 50 to rotate around its own center axis.

[0070] Combination Figure 3 As shown, when the temperature of area C is abnormal, the laser beam can adjust the size of the spot D irradiated by the laser on the wafer based on the radial size of area C, and make the size of the spot D the same as the radial size of area C. At the same time, the emission angle of the laser beam is adjusted so that the spot D irradiated by the laser on the wafer is located at a certain point in area C.

[0071] Then, when the wafer rotates with the carrying unit 20 , the light spot D passes through the remaining area of ​​the area C in sequence, so as to uniformly heat the position of the wafer in the area C.

[0072] Therefore, by rotating the carrying unit 20 , the position where the laser unit 30 irradiates the wafer can be kept stationary, so that uniform thermal compensation can be achieved for the corresponding area of ​​the wafer.

[0073] Therefore, the above-mentioned wafer annealing device realizes temperature control through the cooperation of the lamp bead unit 10 and the laser unit 30. The lamp bead unit 10 is the temperature control body, and the laser unit 30 is used to realize local temperature compensation to ensure that each temperature control zone and the adjacent parts of adjacent temperature control zones reach the target temperature, thereby improving the uniformity of temperature control. Moreover, the adjustment method of the lamp bead unit 10 in cooperation with the laser unit 30 is relatively simple, and the laser unit 30 does not need to perform complex scanning, thereby simplifying the operation and annealing process.

[0074] This embodiment also provides a wafer annealing method, comprising the following steps:

[0075] Turn on each lamp bead group so that the temperature of the temperature control zone corresponding to each lamp bead group in the heating chamber approaches the target temperature; the lamp bead group includes a circular lamp bead group and a plurality of annular lamp bead groups surrounding the circular lamp bead group, each of the annular lamp bead groups is nested radially outward from the center of the circular lamp bead group, and the central axis of the circular lamp bead group is collinear with the central axis of each annular lamp bead group. The arrangement of each lamp bead group is as follows: Figure 2 As shown, the above content has detailed the arrangement of the lamp bead groups, which will not be repeated here. Since each lamp bead group is controlled independently, the temperature of the adjacent areas of each temperature control zone will fluctuate.

[0076] The heating chamber is divided into several temperature detection zones along a direction parallel to the lamp bead unit 10, and the temperature control zone does not completely overlap with any of the temperature detection zones; complete overlap here means that the temperature control zone and the temperature detection zone are completely consistent in shape and overlap, and corresponding incomplete overlap means that the shapes of the two are not completely consistent, that is, if there is only partial overlap, it is also within the scope of incomplete overlap.

[0077] The temperature detection zone includes a circular temperature detection zone and a plurality of annular temperature detection zones surrounding the circular temperature detection zone, wherein the circular temperature detection zone is collinear with the central axis of each of the annular temperature detection zones and is collinear with the central axis of the circular lamp bead group. When the wafer is placed in the heating chamber, the central axis of the wafer should be collinear with the central axis of the circular lamp bead group.

[0078] The above arrangement enables the temperature detection zone to include an adjacent detection zone and a non-adjacent detection zone, wherein the adjacent detection zone corresponds to the adjacent portion of two adjacent temperature control zones, and the non-adjacent detection zone corresponds to a temperature control zone. Figure 3 As shown, Figure 3 The middle area C is one of the temperature detection areas. Figure 3 Only one of the temperature detection zones is shown in the figure. The remaining temperature detection zones are embedded inside and outside the zone C and are coaxially adjacent to each other. The zone C is located at the junction of the temperature control zone A and the temperature control zone B, that is, the zone C includes a part of the temperature control zone A and a part of the temperature control zone B, so the zone C belongs to the adjacent detection zone. In this embodiment, it is preferred to set an adjacent detection zone at the junction of every two temperature control zones. The non-adjacent detection zone corresponds to only one temperature control zone ( Figure 3 The above temperature detection zone can ensure to cover the adjacent area of ​​the adjacent temperature control zone. The radial size of each temperature detection zone can be set based on the adaptability of actual use requirements.

[0079] Detect the real-time temperature of the wafer in the heating chamber corresponding to the position of each temperature detection zone; this detection method can be detected by an infrared sensor, and its detection means is existing technology and will not be repeated here.

[0080] If the real-time temperature of the wafer position corresponding to a temperature detection zone is greater than the target temperature, the power of the lamp bead group corresponding to the temperature detection zone is reduced; specifically, if the temperature detection zone corresponds to one lamp bead group, the power of one lamp bead group is adjusted; if the temperature detection zone is located at the adjacent position of two temperature detection zones, the temperature detection zone corresponds to two lamp bead groups, and the power of the two lamp bead groups is adjusted. Figure 3 As shown, part of area C corresponds to temperature control zone A, and the other part corresponds to temperature control zone B, then area C corresponds to the fourth annular lamp bead group 25 and the fifth annular lamp bead group 26. Therefore, the power of the fourth annular lamp bead group 25 and the fifth annular lamp bead group 26 can be reduced at the same time.

[0081] If the real-time temperature of the wafer position corresponding to a non-adjacent detection zone is lower than the target temperature, the power of the lamp bead group corresponding to the non-adjacent detection zone is increased so that the temperature of the entire temperature control zone corresponding to the non-adjacent detection zone increases and approaches the target temperature;

[0082] If the real-time temperature of the wafer position corresponding to a temperature detection zone is lower than the target temperature, the temperature detection zone is designated as the target zone; the laser unit 30 emits laser light to illuminate the position of the wafer in the target zone, so that the temperature of the position approaches the target temperature. Figure 3 As shown, if the temperature of area C is too low, the temperature of the area of ​​temperature control zone A except area C is equal to the target temperature, and the temperature of the area of ​​temperature control zone B except area C is equal to the target temperature. At this time, the temperature of area C can be increased by irradiating area C with the laser unit 30, without affecting the temperature of the area of ​​temperature control zone A except area C and the temperature of the area of ​​temperature control zone B except area C. When the laser unit 30 irradiates area C, area C is first positioned, and the distance from the center position of the actual light spot irradiated by the laser unit 30 on the wafer to the radial center position of area C is calculated, and the required rotation angle of the laser unit 30 is calculated based on the distance and the vertical distance between the laser unit 30 and the wafer, and the laser unit 30 is rotated so that the light spot is irradiated at the radial center position of area C. Then, the size of the light spot of the laser unit 30 is adjusted based on the radial size of area C, so that the diameter of the light spot is equal to the radial size of area C, that is, the light spot fills area C in the radial direction.

[0083] The wafer is rotated, and the rotation of the wafer is achieved by rotating the carrier unit 20. The rotation axis of the wafer, the center axis of the wafer itself and the center axis of the circular lamp bead group are collinear. The laser emitted by the laser unit 30 irradiates a certain point of the wafer in the target area. That is, the laser unit 30 remains stationary, and its irradiation area is fixed at Figure 3 The spot D is located in the middle. When the wafer rotates, the spot D passes through the rest of the area C in sequence to achieve uniform heating of area C. During the irradiation process, the laser power is determined based on the temperature difference between the actual temperature of area C and the target temperature. The temperature difference is positively correlated with the laser power. During the irradiation process, the real-time temperature of area C is detected in real time. If the real-time temperature is equal to the target temperature, the laser irradiation is stopped.

[0084] In this embodiment, uniform heating of region C is achieved by rotating the wafer and irradiating the laser unit 30 at rest. In other alternative embodiments, during the irradiation process, the wafer may remain stationary, and the laser unit 30 may rotate around the central axis of the wafer to heat region C uniformly.

[0085] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0086] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A wafer annealing device, characterized in that: include: Lamp unit, carrier unit and laser unit; The lamp bead unit includes a plurality of densely arranged lamp beads, and each of the lamp beads is divided into a plurality of lamp bead groups; The carrying unit is used to carry the wafer, and the carrying unit is parallel to and directly opposite to the lamp bead unit; The laser unit is used to emit laser light, and a laser emission port of the laser unit faces the carrying unit, so that the laser light emitted by the laser unit irradiates the wafer on the carrying unit.

2. The wafer annealing device according to claim 1, characterized in that: The laser emission angle of the laser unit is adjustable; and / or the laser unit is arranged to move relative to the carrying unit.

3. The wafer annealing device according to claim 1, characterized in that: The laser emission power of the laser unit is adjustable.

4. The wafer annealing device according to claim 1, characterized in that: The lamp bead unit and the laser unit are respectively arranged on two sides of the carrying unit; The bearing unit is made of a transparent material, and / or the bearing unit is a hollow structure in the middle.

5. The wafer annealing device according to claim 1, characterized in that: The lamp bead group includes a circular lamp bead group and a plurality of annular lamp bead groups surrounding the circular lamp bead group. The annular lamp bead groups are nested in sequence radially outward from the center of the circular lamp bead group, and the central axis of the circular lamp bead group is collinear with the central axis of each annular lamp bead group.

6. The wafer annealing device according to any one of claims 1 to 5, characterized in that: The setting of the rotation of the carrying unit.

7. The wafer annealing device according to claim 6, characterized in that: When the lamp bead group includes a round lamp bead group, the rotation center axis of the bearing unit is collinear with the center axis of the round lamp bead group.

8. A wafer annealing method, characterized in that: The following steps are involved: Turn on each lamp bead group so that the temperature of the temperature control zone corresponding to each lamp bead group in the heating chamber approaches the target temperature; The heating chamber is divided into a plurality of temperature detection zones along a direction parallel to the lamp bead unit, wherein the temperature detection zones include an adjacent detection zone and a non-adjacent detection zone, wherein the adjacent detection zone corresponds to the adjacent part of two adjacent temperature control zones, and the non-adjacent detection zone corresponds to a temperature control zone; Detecting the real-time temperature of the wafer in the heating chamber corresponding to the location of each temperature detection zone; If the real-time temperature of the wafer position corresponding to a temperature detection zone is greater than the target temperature, the power of the lamp bead group corresponding to the temperature detection zone is reduced; If the real-time temperature of the wafer position corresponding to a non-adjacent detection zone is lower than the target temperature, increase the power of the lamp bead group corresponding to the non-adjacent detection zone; If the real-time temperature of a wafer position corresponding to an adjacent detection zone is lower than the target temperature, the temperature detection zone is designated as the target area; the laser emitted by the laser unit irradiates the position of the wafer within the target area, so that the temperature of the position approaches the target temperature.

9. The wafer annealing device according to claim 8, characterized in that: The lamp bead group includes a circular lamp bead group and a plurality of annular lamp bead groups surrounding the circular lamp bead group, each of the annular lamp bead groups is nested in sequence radially outward from the center of the circular lamp bead group, and the central axis of the circular lamp bead group is collinear with the central axis of each of the annular lamp bead groups; The temperature detection zone includes a circular temperature detection zone and a plurality of annular temperature detection zones surrounding the circular temperature detection zone. The circular temperature detection zone is collinear with the central axis of each of the annular temperature detection zones and is collinear with the central axis of the circular lamp bead group.

10. The wafer annealing device according to claim 9, characterized in that: The laser unit emits laser light to irradiate a position of the wafer in the target area so that the temperature of the position approaches the target temperature, including the following steps: The laser light emitted by the laser unit is directed to illuminate a certain point of the wafer located in the target area; The wafer is rotated so that the rotation center axis of the wafer, the center axis of the wafer itself and the center axis of the circular lamp bead group are collinear.

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