Miniaturized spectrometer, spectrometer array and angle resolution spectrometer

Abstract

The invention relates to a miniaturized spectrometer, a spectrometer array and an angle resolution spectrometer. The miniaturized spectrometer comprises a metasurface device, a liquid crystal array and a perovskite photoelectric detector which are sequentially arranged, the metasurface device comprises a first substrate and a first conductive layer, one surface of the first substrate is covered with the first conductive layer, and a titanium dioxide layer is arranged on the other surface of the first substrate; the perovskite photoelectric detector comprises a second conductive layer, a second substrate, a third conductive layer, a hole transport layer, a perovskite layer and an electron transport layer which are stacked in sequence. The miniaturized spectrometer provided by the invention is small in size and convenient to integrate and combine into a spectrometer array; the spectrometer array and the superlens can be combined into an angle resolution metasurface spectrometer, a traditional objective lens, an imaging light path, a slit and a spectrometer are replaced, and a sub-meter back focal plane imaging instrument is compressed to hundreds of micrometers. The angle resolution metasurface spectrometer provided by the invention has the advantage of high angle resolution.

Description

Technical Field

[0001] The present invention relates to the field of photoelectric detection technology, and in particular to a miniaturized spectrometer, a spectrometer array and an angle-resolving spectrometer. Background Art

[0002] Spectrometer is one of the most important instruments for material characterization and chemical analysis so far. Traditional desktop spectrometers usually rely on a combination of large dispersive optical devices, long optical paths, detector arrays and movable parts. In practical applications, very complex optical paths, components and large spaces are required. With the development of on-chip technology, ultra-small, integrable, high-resolution spectrometers are gaining more and more attention. Reconstructive spectrometer systems or computational spectrometer systems greatly reduce the size of spectrometers through sensing methods.

[0003] At present, computational spectrometers are mainly tested by scanning, which takes a long time and is difficult to array, making it difficult to obtain angle-resolved spectra. Light scattered or radiated from a material carries valuable information about its origin, so angle-resolved spectroscopy has always been a key technology for identifying such information, but it usually requires a huge optical system, which greatly hinders its application.

[0004] Therefore, it is very necessary to develop a miniaturized spectrometer suitable for ultra-compact angle-resolved spectrometer. Summary of the invention

[0005] The object of the present invention is to overcome the deficiencies of the prior art and provide a miniaturized spectrometer, a spectrometer array and an angle-resolved spectrometer.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] In a first aspect, the present invention provides a miniaturized spectrometer, comprising a metasurface device, a liquid crystal device and a perovskite photodetector arranged in sequence, wherein the metasurface device comprises a first substrate and a first conductive layer, the first conductive layer is covered on one surface of the first substrate, and the other opposite surface of the first substrate is provided with a plurality of titanium dioxide units distributed in an array; the perovskite photodetector comprises a second conductive layer, a second substrate, a third conductive layer, a hole transport layer, a perovskite layer and an electron transport layer stacked in sequence, the electron transport layer is provided with a metal array electrode on a side away from the perovskite layer, and the electron transport layer comprises a C60 layer and a BCP layer arranged in sequence.

[0008] As a preferred embodiment of the present invention, the thickness of the titanium dioxide unit is 600-1000 nm.

[0009] As a preferred embodiment of the present invention, the titanium dioxide unit is a cross structure, preferably a symmetrical cross structure.

[0010] As a preferred embodiment of the present invention, the method for preparing the metasurface device comprises the following steps:

[0011] (1) preparing a first substrate with a first conductive layer, and depositing titanium dioxide on the surface of the first conductive layer to form a titanium dioxide layer;

[0012] (2) spin coating the resist on the surface of the titanium dioxide layer and baking to form a resist layer;

[0013] (3) exposing and developing the anti-etching layer to remove the anti-etching layer in a predetermined area, so that the titanium dioxide layer directly below the predetermined area is exposed;

[0014] (4) depositing chromium on the surface of the remaining anti-corrosion layer and the exposed surface of the titanium dioxide layer to form a chromium layer;

[0015] (5) stripping the chromium layer formed on the resist layer together with the remaining resist layer;

[0016] (6) using the remaining chromium layer as a mask, etching the titanium dioxide layer to remove the titanium dioxide layer directly below the predetermined area;

[0017] (7) Peeling off the mask to obtain the metasurface device.

[0018] As a preferred embodiment of the present invention, the liquid crystal device includes liquid crystal, the liquid crystal is filled between the titanium dioxide unit and the second conductive layer, and between the first substrate and the second conductive layer, and the liquid crystal is covered with a shell, which is made of metal.

[0019] As a preferred embodiment of the present invention, the hole transport layer is any one of a CbzNaph self-assembled layer, a MeO-2PACz self-assembled layer and a 2PACz self-assembled layer; and the thickness of the hole transport layer is 5-10 nm.

[0020] As a preferred embodiment of the present invention, the thickness of the perovskite layer is 575-600 nm.

[0021] As a preferred embodiment of the present invention, the thickness of the electron transport layer is 23-38 nm, the thickness of the C60 layer is 20-30 nm, and the thickness of the BCP layer is 3-8 nm.

[0022] As a preferred embodiment of the present invention, the method for preparing the perovskite photodetector comprises the following steps:

[0023] S1, preparing a second substrate, wherein a second conductive layer is plated on one surface of the second substrate, and a third conductive layer is plated on another opposite surface of the second substrate; spin coating a hole transport material on the surface of the third conductive layer, and annealing the material to form a hole transport layer on the third conductive layer;

[0024] S2, spin coating a perovskite precursor on the hole transport layer, and annealing to form a perovskite layer on the hole transport layer;

[0025] S3, spin coating a photoresist on the perovskite layer to form a photoresist layer;

[0026] S4, exposing and developing the photoresist layer to remove the photoresist layer in the preset area, so that the perovskite layer directly below the preset area is exposed;

[0027] S5, depositing C60 on the remaining photoresist layer and the exposed surface of the perovskite layer to form a C60 layer, and depositing BCP on the surface of the C60 layer to form a BCP layer, wherein the C60 layer and the BCP layer constitute an electron transport layer;

[0028] S6, depositing a metal electrode material on the electron transport layer to form a metal electrode layer;

[0029] S7, peeling off the electron transport layer and the metal electrode layer formed on the surface of the remaining photoresist layer together with the remaining photoresist layer to obtain the perovskite photodetector.

[0030] In a second aspect, the present invention provides a spectrometer array, comprising a plurality of spectrometer units, wherein the spectrometer units comprise a plurality of miniaturized spectrometers as described in the first aspect, and the plurality of spectrometer units are distributed in an array.

[0031] In a third aspect, the present invention provides an angle-resolved spectrometer, comprising the spectrometer array as described in the second aspect.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] The spectrometer unit provided by the present invention is small in size and can be easily integrated into a spectrometer array; the spectrometer array can be combined with a superlens to form an angle-resolved metasurface spectrometer, replacing the traditional objective lens, imaging optical path, slit and spectrometer, so that the sub-meter-level back focal plane imaging instrument is compressed to hundreds of microns; the angle-resolved metasurface spectrometer provided by the present invention has the advantage of high angular resolution. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A schematic diagram of the structure of a miniaturized spectrometer provided by the present invention;

[0035] Figure 2A flow chart of the preparation of the metasurface device provided by the present invention;

[0036] Figure 3 A schematic diagram of the structure of a titanium dioxide unit provided by the present invention;

[0037] Figure 4 A flow chart of the preparation of the perovskite photodetector provided by the present invention;

[0038] Figure 5 A scanning electron microscope image provided by an embodiment of the present invention, wherein a is a metasurface device, b is a perovskite photodetector, and c is a spectrometer array;

[0039] Figure 6 A test schematic diagram provided for an effect example of the present invention;

[0040] Figure 7 Performance characterization diagram of a miniaturized spectrometer provided for the effect example of the present invention, wherein a is a trend diagram of dark current density and photocurrent density of the miniaturized spectrometer changing with voltage, b is an external quantum efficiency spectrum of the miniaturized spectrometer, c is a responsivity spectrum, and d is a spectrum of detection capability of the miniaturized spectrometer;

[0041] Figure 8 Reconstructed images of four different incident spectra provided for the effect examples of the present invention;

[0042] Fig. 9 This is a reconstruction diagram of the mercury lamp spectrum provided for the effect example of the present invention.

[0043] In the figure, 1-supersurface device, 11-first substrate, 12-first conductive layer, 13-titanium dioxide unit, 14-titanium dioxide unit, 15-anti-corrosion layer, 16-chromium layer, 2-liquid crystal device, 21-liquid crystal, 22-shell, 3-perovskite photodetector, 31-second conductive layer, 32-second substrate, 33-third conductive layer, 34-hole transport layer, 35-perovskite layer, 36-electron transport layer, 37-metal array electrode, 38-photoresist layer. DETAILED DESCRIPTION

[0044] To better illustrate the purpose, technical solutions and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments. The present invention provides the following embodiments to facilitate understanding of the present invention. The present invention provides these embodiments but is not intended to limit the scope of the claims.

[0045] In a first aspect, the present invention provides a miniaturized spectrometer, the structure of which is as follows: Figure 1As shown. The miniaturized spectrometer includes a metasurface device 1, a liquid crystal device 2 and a perovskite photodetector 3 which are arranged in sequence, wherein the metasurface device 1 includes a first substrate 11 and a first conductive layer 12, the first conductive layer 12 is covered on one surface of the first substrate 11, and a plurality of titanium dioxide units 13 distributed in an array are arranged on the other opposite surface of the first substrate 11; the perovskite photodetector 3 includes a second conductive layer 31, a second substrate 32, a third conductive layer 33, a hole transport layer 34, a perovskite layer 35 and an electron transport layer 36 which are stacked in sequence, the electron transport layer 36 is provided with a metal array electrode 37 on a side away from the perovskite layer 35, and the electron transport layer 36 includes a C60 layer and a BCP layer which are arranged in sequence.

[0046] In the present invention, the second conductive layer 31, the second substrate 32, the third conductive layer 33, the hole transport layer 34, the perovskite layer 35 and the electron transport layer 36 in the perovskite photodetector 3 are stacked in sequence. The structure of this inverted perovskite detector is more stable and can greatly reduce the size of the miniaturized spectrometer in its thickness direction.

[0047] The present invention sequentially arranges a metasurface device 1, a liquid crystal device 2, and a perovskite photodetector 3. By adjusting the driving voltage, multiple transmission spectra with high randomness can be obtained on a metasurface device 1. The perovskite detector 3 converts the optical signal into an electrical signal so that the spectral information of the incident light can be reconstructed through a neural network. The light passing through the metasurface device 1 is modulated and then dropped, and is absorbed by the perovskite photodetector 3. The signal of the perovskite photodetector 3 is expressed as: S i =∫I(λ)T i (λ)η(λ)dλ;

[0048] Wherein, I(λ) is the spectrum of the incident light, Ti(λ) is the transmission spectrum of the metasurface device, and η(λ) is the spectral response of the perovskite photodetector. The interaction between a single titanium dioxide unit and its periodic structure gives the metasurface device 1 rich spectral features in Ti(λ), such as sharp peaks and broadband background; by applying different voltages, one metasurface device 1 is sufficient to produce a series of random Ti(λ); the Ti(λ) of 8 micron-sized metasurface devices 1 is sufficient to produce a spectrum with high accuracy, high resolution and high signal-to-noise ratio. Therefore, the miniaturized spectrometer provided by the present invention is suitable for being distributed in a small-sized (micron-sized) array and combined with a superlens to form a high-resolution angle-resolved spectrometer, thereby greatly reducing the size of the angle-resolved spectrometer, which is beneficial to greatly save the spectrum acquisition time.

[0049] In one embodiment, the first substrate 11 is a glass substrate; and the first conductive layer 12 is an ITO (indium tin oxide) coating.

[0050] In one embodiment, the height of the titanium dioxide unit 13 is 600-1000 nm.

[0051] In one embodiment, the titanium dioxide unit 13 is a cross structure, preferably a symmetrical cross structure.

[0052] Specifically, the vertical bar width W1 of the cross structure is 50-100 nm, and the horizontal bar width W2 of the cross structure is 50-100 nm; preferably, the vertical bar width W1 is equal to the horizontal bar width W2.

[0053] Specifically, the length L1 of the vertical bar of the cross structure is 200-250 nm, and the length L2 of the horizontal bar of the cross structure is 200-250 nm; preferably, the length L1 of the vertical bar is equal to the length L2 of the horizontal bar.

[0054] Specifically, the height of the vertical bars of the cross structure is 600-1000 nm, and the height of the horizontal bars of the cross structure is 600-1000 nm; preferably, the height of the vertical bars is equal to the height of the horizontal bars.

[0055] Specifically, in the length direction of the vertical bars of the cross structure, the spacing D1 between the central axes of the horizontal bars of any two adjacent cross structures is 300-370nm; in the length direction of the horizontal bars of the cross structure, the spacing D2 between the central axes of the vertical bars of any two adjacent cross structures is 300-370nm; preferably, the spacing D1 is equal to the spacing D2.

[0056] In one embodiment, see Figure 2 , a method for preparing a metasurface device 1 comprises the following steps:

[0057] (1) preparing a first substrate 11 with a first conductive layer 12, and depositing titanium dioxide on the surface of the first conductive layer 12 to form a titanium dioxide layer 14;

[0058] (2) Spin-coating the anti-corrosion agent on the surface of the titanium dioxide layer 14 and baking it to form the anti-corrosion layer 15;

[0059] (3) performing exposure and development treatment on the anti-etching layer 15 to remove the anti-etching layer in a predetermined area, so that the titanium dioxide layer 14 directly below the predetermined area is exposed;

[0060] (4) depositing chromium on the surface of the remaining anti-corrosion layer 15 and the exposed surface of the titanium dioxide layer 14 to form a chromium layer 16;

[0061] (5) stripping the chromium layer 16 formed on the resist layer 15 together with the remaining resist layer 15;

[0062] (6) using the remaining chromium layer 16 as a mask, etching the titanium dioxide layer 14 to remove the titanium dioxide layer 14 located directly below the predetermined area, thereby forming a plurality of titanium dioxide units 13 distributed in an array;

[0063] (7) Peel off the mask to obtain the metasurface device 1.

[0064] Specifically, in step (2), the resist includes at least one of PMMA A2 and PMMA A4; the thickness of the resist layer 15 is 80-120 nm; the baking temperature is 170-190° C., and the baking time is 45-90 min.

[0065] Specifically, in step (3), the developer used in the development process is prepared by mixing methyl isobutyl ketone and isopropyl alcohol in a volume ratio of 1:(2-4).

[0066] Specifically, in step (4), the thickness of the chromium layer 16 is 20-30 nm.

[0067] Specifically, step (5) specifically includes: immersing the device obtained by step (4) into a degumming solution, and then rinsing to peel off the chromium layer 16 formed on the anti-corrosion layer 15 together with the remaining anti-corrosion layer 15; the immersion temperature is 75-85°C, and the immersion time is 10-14h.

[0068] Specifically, step (7) specifically includes: immersing the device obtained by step (6) into a chromium removal solution, removing the mask, and obtaining the metasurface device; the immersion temperature is 20-30°C, and the immersion time is 0.3-1h.

[0069] In one embodiment, the liquid crystal device 2 includes liquid crystal 21 , which is filled between the titanium dioxide unit 13 and the second conductive layer 31 , and between the first substrate 11 and the second conductive layer 31 . The liquid crystal 21 is covered with a shell 22 , which is made of metal.

[0070] Specifically, the distance between the titanium dioxide unit 13 and the second conductive layer 31 is 1-5 μm, for example, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm or a range consisting of any two groups of data therein.

[0071] Specifically, the method for preparing the liquid crystal device 2 includes the following steps:

[0072] The metasurface device 1 and the perovskite detector 3 are aligned, and the shell frame of the shell 22 is arranged along the edges of the metasurface device 1 and the edges of the perovskite detector 3 to form a filling chamber with an opening at one end, and the filling chamber is placed in a manner such that the opening thereof faces upward, and the liquid crystal polymer is melted and filled into the filling chamber, and the chamber is placed in a vacuum box. After repeated evacuation and deflation for 3 to 5 times and cooling, the opening of the filling chamber is sealed with the shell cover of the shell 22 to obtain the liquid crystal device 2.

[0073] In one embodiment, the second conductive layer 31 is an ITO (indium tin oxide) coating, the second substrate 32 is made of any one of glass and mica, and the third conductive layer 33 is an ITO (indium tin oxide) coating.

[0074] In one embodiment, the thickness of the second conductive layer 31 is 100-200 nm; the thickness of the third conductive layer 33 is 100-200 nm.

[0075] In one embodiment, the hole transport layer 34 is any one of a CbzNaph self-assembled layer, a MeO-2PACz self-assembled layer and a 2PACz self-assembled layer; the thickness of the hole transport layer 34 is 5-10 nm.

[0076] In one embodiment, the thickness of the perovskite layer 35 is 575-600 nm.

[0077] In one embodiment, the thickness of the electron transport layer 36 is 23-38 nm, the thickness of the C60 layer is 20-30 nm, and the thickness of the BCP layer is 3-8 nm.

[0078] In one embodiment, the metal array electrode 37 is made of at least one of gold and copper.

[0079] In one embodiment, see Figure 3 , a method for preparing a perovskite photodetector 3 comprises the following steps:

[0080] S1, preparing a second substrate 32, wherein a second conductive layer 31 is plated on one surface of the second substrate 32, and a third conductive layer 33 is plated on another opposite surface of the second substrate 32; spin coating a hole transport material on the surface of the third conductive layer 33, and annealing the surface to form a hole transport layer 34 on the third conductive layer 33;

[0081] S2, spin-coating a perovskite precursor on the hole transport layer 34, and performing annealing treatment to form a perovskite layer 35 on the hole transport layer 34;

[0082] S3, spin coating a photoresist on the perovskite layer 35 to form a photoresist layer 38;

[0083] S4, exposing and developing the photoresist layer 38 to remove the photoresist layer 38 in the preset area, so that the perovskite layer 35 directly below the preset area is exposed;

[0084] S5, depositing C60 on the remaining photoresist layer 38 and the exposed surface of the perovskite layer 35 to form a C60 layer, and depositing BCP on the surface of the C60 layer to form a BCP layer, and the C60 layer and the BCP layer constitute an electron transport layer 36;

[0085] S6, depositing a metal electrode material on the electron transport layer 36 to form a metal electrode layer;

[0086] S7, peeling off the electron transport layer 36 and the metal electrode layer formed on the surface of the remaining photoresist layer 38 together with the remaining photoresist layer 38 to form a metal array electrode 37, thereby obtaining a perovskite photoelectric detector 3.

[0087] Specifically, in step S1, the annealing treatment is performed at a temperature of 90-110° C. and for a time of 5-20 min.

[0088] Specifically, the perovskite precursor in step S2 is formed by a mixture of methylammonium iodide, lead, iodine and an organic solvent, wherein the molar ratio of the methylammonium iodide, lead and iodine is methylammonium iodide, lead and iodine = 1:1:2, and the organic solvent includes at least one of dimethylformamide and dimethyl sulfoxide, and the organic solvent is further preferably a mixed solvent of dimethylformamide and dimethyl sulfoxide in a volume ratio of (3-5):1; in the perovskite precursor, the ratio between the sum of the masses of methylammonium iodide, lead and iodine and the volume of the organic solvent is (750-850) mg:1 mL.

[0089] Specifically, in step S2, the spin coating method includes the following steps: at a rotation speed of 800-1500rpm, the perovskite precursor is uniformly spin-coated on the hole transport layer 34 within 5-20s; then, it is rotated at a rotation speed of 4000-5000rpm for 20-30s, and then at a rotation speed of 4000-5000rpm, the anti-solvent is uniformly added to the surface of the film obtained by spin coating within 3-8s; the anti-solvent is chlorobenzene, and the amount of the anti-solvent added is 200-400μL.

[0090] Specifically, in step S2, the annealing treatment is performed at a temperature of 90-110° C. and for a time of 5-20 min.

[0091] In a second aspect, the present invention provides a spectrometer array, comprising a plurality of spectrometer units, wherein the spectrometer units comprise a plurality of miniaturized spectrometers as described in the first aspect, and the plurality of spectrometer units are distributed in an array.

[0092] In a third aspect, the present invention provides an angle-resolved spectrometer, comprising the spectrometer array as described in the second aspect.

[0093] The present invention provides the following examples to facilitate understanding of the present invention. The present invention provides these examples but is not intended to limit the scope of the claims.

[0094] Unless otherwise specified, other materials and reagents used in the following examples can be obtained from commercial sources.

[0095] The model of the electron beam evaporation coating machine used in the following examples is SKE_A_75.

[0096] Example 1

[0097] This embodiment provides a miniaturized spectrometer, the structure of which is as follows: Figure 1 and Figure 3 As shown, the miniaturized spectrometer includes a metasurface device 1, a liquid crystal array 2 and a perovskite photodetector 3 which are arranged in sequence.

[0098] The metasurface device 1 includes a first substrate 11 and a first conductive layer 12, wherein the first conductive layer 12 is coated on one surface of the first substrate 11, and a plurality of titanium dioxide units 13 distributed in an array are arranged on the other opposite surface of the first substrate 11; the first substrate 11 is a glass substrate; the first conductive layer 12 is an ITO (indium tin oxide) coating; and the titanium dioxide unit 13 is a symmetrical cross structure. The vertical bar width of the cross structure is W1, the horizontal bar width is W2, and the vertical bar width W1=W2=80nm; the vertical bar length of the cross structure is L1, the horizontal bar length is L2, and L1=L2=220nm; the vertical bar height and the horizontal bar height of the cross structure are both 800nm; the center axis spacing between any two adjacent cross structures in the extension direction of the vertical bar is D1, and the center axis spacing between any two adjacent cross structures in the length direction of the horizontal bar is D2, and D1=D2=340nm.

[0099] See also Figure 2 , the preparation method of the metasurface device 1 is:

[0100] (1) preparing a glass substrate with an ITO layer, wherein the plane size of the glass substrate is 4 μm×4 μm, the thickness of the glass substrate is 1.5 mm, the thickness of the ITO layer is 135 nm, and titanium dioxide is deposited on the surface with the ITO layer to form a titanium dioxide layer 14 with a thickness of 800 nm;

[0101] (2) Spin-coating the resist on the titanium dioxide layer 14 and baking at 180° C. for 60 min to form a resist layer 15 with a thickness of 100 nm; the resist is PMMAA2;

[0102] (3) exposing and developing the anti-etching layer 15 to remove the anti-etching layer 15 in a predetermined area, so that the titanium dioxide layer 14 located directly below the predetermined area is exposed; the developing solution used for the developing treatment is a mixture of methyl isobutyl ketone and isopropyl alcohol in a volume ratio of 1:3;

[0103] (4) using an electron beam evaporator to deposit chromium on the surface of the remaining anti-corrosion layer 15 and the exposed surface of the titanium dioxide layer 14 to form a chromium layer 16 with a thickness of 25 nm;

[0104] (5) soaking the device obtained by the process of step (4) in a degumming solution, and then rinsing, so as to peel off the chromium layer 16 formed on the anti-corrosion layer 15 together with the remaining anti-corrosion layer 15; the soaking temperature is 80° C., the soaking time is 12 hours; the degumming solution is Remover PG;

[0105] (6) using the remaining chromium layer 16 as a mask, performing reactive ion etching on the titanium dioxide layer 14 to remove the titanium dioxide layer 14 located directly below the predetermined area, and the titanium dioxide layer 14 located directly below the mask is protected, thereby forming a plurality of titanium dioxide units 13 distributed in an array;

[0106] (7) After removing the mask by immersion in a chrome removal solution, a metasurface device 1 is obtained. The chrome removal solution is a nitrate solution for removing the chrome mask.

[0107] The perovskite photodetector 3 includes a second conductive layer 31, a second substrate 32, a third conductive layer 33, a hole transport layer 34, a perovskite layer 35 and an electron transport layer 36 stacked in sequence. The electron transport layer 36 is provided with a metal array electrode 37 on the side away from the perovskite layer 35. The electron transport layer 36 includes a C60 layer and a BCP layer arranged in sequence. The material of the metal array electrode 37 is copper. The second conductive layer is an ITO layer, the third conductive layer is an ITO layer, the second substrate is a mica sheet, and the hole transport layer is a MeO-2PACz self-assembled layer.

[0108] See also Figure 4 , a method for preparing a perovskite photodetector 3 comprises the following steps:

[0109] S1. Prepare a mica sheet with ITO, the plane size of the mica sheet is 4 μm×4 μm, and the thickness of the mica sheet is 20 μm; one surface of the mica sheet is coated with an ITO layer with a thickness of 13 nm, and the other opposite surface of the second substrate is coated with an ITO layer with a thickness of 135 nm; spin-coat MeO-2PACz on one of the ITO layers, and anneal at 100° C. for 10 min to form a hole transport layer with a thickness of 10 nm;

[0110] S2. At a rotation speed of 1000 rpm, a perovskite precursor is uniformly spin-coated on the hole transport layer 34 within 10 seconds. The perovskite precursor is a mixture of methylammonium iodide, lead, iodine and an organic solvent, wherein the molar ratio of the methylammonium iodide, lead and iodine is methylammonium iodide, lead and iodine = 1:1:2, and the organic solvent includes at least one of dimethylformamide and dimethyl sulfoxide, and the organic solvent is further preferably a mixed solvent of dimethylformamide and dimethyl sulfoxide in a volume ratio of 4:1; the ratio between the sum of the masses of methylammonium iodide, lead and iodine and the volume of the organic solvent is 812 mg:1 mL; then rotate at a rotation speed of 4500 rpm for 25 seconds, and then at a rotation speed of 4500 rpm, 300 μL of anti-solvent chlorobenzene is uniformly dripped on the surface of the spin-coated film within 5 seconds, and annealed at 100°C for 10 minutes to form a perovskite layer 35 with a thickness of 600 nm on the hole transport layer 34;

[0111] S3, spin-coating a photoresist on the surface of the perovskite layer 35 to form a photoresist layer 38 with a thickness of 400 nm;

[0112] S4, exposing and developing the photoresist layer 38, removing the photoresist layer 38 located in the preset area, so that the perovskite layer 35 located directly below the preset area is exposed;

[0113] S5, depositing C60 on the remaining photoresist layer 38 and the exposed surface of the perovskite layer 35 to form a C60 layer with a thickness of 30 nm, and depositing BCP on the surface of the C60 layer to form a BCP layer with a thickness of 8 nm, and the C60 layer and the BCP layer constitute an electron transport layer 36;

[0114] S6, depositing copper on the electron transport layer 36 to form a metal electrode layer with a thickness of 80 nm;

[0115] S7, peeling off the electron transport layer 36 and the metal electrode layer formed on the surface of the remaining photoresist layer 38 together with the remaining photoresist layer 38 to form a metal array electrode 37, thereby obtaining a perovskite photodetector 3.

[0116] The liquid crystal device 2 includes liquid crystal 21, which is filled between the titanium dioxide unit 13 and the second conductive layer 31, and between the first substrate 11 and the second conductive layer 31. The liquid crystal 21 is covered with a shell 22, which is made of metal. The distance between the titanium dioxide unit 13 and the second conductive layer 31 is 2μm.

[0117] The method for preparing the liquid crystal device 2 comprises the following steps:

[0118] The metasurface device 1 and the perovskite detector 3 are aligned, and the shell frame of the shell 22 is arranged along the edge of the metasurface device 1 and the edge of the perovskite detector 3 to form a filling chamber with an opening at one end, and sealed with UV curing adhesive, and placed in a manner that the opening of the filling chamber faces upward, and the liquid crystal polymer is melted and filled into the filling chamber, and placed in a vacuum box. After repeated evacuation and degassing for 3 to 5 times and cooling, the shell cover of the shell 22 is sealed with UV curing adhesive to seal the opening of the filling chamber, and the liquid crystal device 2 is obtained.

[0119] This embodiment further provides a spectrometer array, including a plurality of spectrometer units, wherein the spectrometer units include a plurality of miniaturized spectrometers provided in this embodiment, and the plurality of spectrometer units are distributed in an array.

[0120] The metasurface device, perovskite photodetector and spectrometer array were photographed using a scanning electron microscope. Figure 5 shown.

[0121] Example 2

[0122] This embodiment provides a miniaturized spectrometer, the structure of which is as follows: Figure 1 As shown, the miniaturized spectrometer includes a metasurface device 1, a liquid crystal array 2 and a perovskite photodetector 3 which are arranged in sequence.

[0123] The metasurface device 1 includes a first substrate 11 and a first conductive layer 12, wherein the first conductive layer 12 is coated on one surface of the first substrate 11, and a plurality of titanium dioxide units 13 distributed in an array are arranged on the other opposite surface of the first substrate 11; the first substrate 11 is a glass substrate; the first conductive layer 12 is an ITO (indium tin oxide) coating; and the titanium dioxide unit 13 is a symmetrical cross structure. The vertical bar width of the cross structure is W1, the horizontal bar width is W2, and the vertical bar width W1=W2=50nm; the vertical bar length of the cross structure is L1, the horizontal bar length is L2, and L1=L2=600nm; the center axis spacing between any two adjacent cross structures in the extension direction of the vertical bar is D1, and the center axis spacing between any two adjacent cross structures in the length direction of the horizontal bar is D2, and D1=D2=300nm.

[0124] The preparation method of the metasurface device 1 is as follows:

[0125] (1) preparing a glass substrate with an ITO layer, wherein the plane size of the glass substrate is 4 μm×4 μm, the thickness of the glass substrate is 2 mm, the thickness of the ITO layer is 135 nm, and titanium dioxide is deposited on the surface with the ITO layer to form a titanium dioxide layer 14 with a thickness of 600 nm;

[0126] (2) Spin-coating the resist on the titanium dioxide layer 14 and baking at 180° C. for 60 min to form a resist layer 15 with a thickness of 300 nm; the resist is PMMA A2;

[0127] (3) exposing and developing the anti-etching layer 15 to remove the anti-etching layer 15 in a predetermined area, so that the titanium dioxide layer 14 located directly below the predetermined area is exposed; the developing solution used for the developing treatment is a mixture of methyl isobutyl ketone and isopropyl alcohol in a volume ratio of 1:3;

[0128] (4) using an electron beam evaporator to deposit chromium on the surface of the remaining anti-corrosion layer 15 and the exposed surface of the titanium dioxide layer 14 to form a chromium layer 16 with a thickness of 29 nm;

[0129] (5) soaking the device obtained by the process of step (4) in a degumming solution, and then rinsing, so as to peel off the chromium layer 16 formed on the anti-corrosion layer 15 together with the remaining anti-corrosion layer 15; the soaking temperature is 80° C., the soaking time is 12 hours; the degumming solution is Remover PG;

[0130] (6) using the remaining chromium layer 16 as a mask, performing reactive ion etching on the titanium dioxide layer 14 to remove the titanium dioxide layer 14 located directly below the predetermined area, and the titanium dioxide layer 14 located directly below the mask is protected, thereby forming a plurality of titanium dioxide units 13 distributed in an array;

[0131] (7) After removing the mask by immersion in a chrome removal solution, a metasurface device 1 is obtained. The chrome removal solution is a nitrate solution for removing the chrome mask.

[0132] The perovskite photodetector 3 includes a second conductive layer 31, a second substrate 32, a third conductive layer 33, a hole transport layer 34, a perovskite layer 35 and an electron transport layer 36 stacked in sequence. The electron transport layer 36 is provided with a metal array electrode 37 on the side away from the perovskite layer 35. The electron transport layer 36 includes a C60 layer and a BCP layer arranged in sequence. The material of the metal array electrode 37 is copper. The second conductive layer is an ITO layer, the third conductive layer is an ITO layer, the second substrate is a mica sheet, and the hole transport layer is a MeO-2PACz self-assembled layer.

[0133] The preparation method of the perovskite photodetector 3 comprises the following steps:

[0134] S1. Prepare a mica sheet with ITO, the plane size of the mica sheet is 4 μm×4 μm, and the thickness of the mica sheet is 30 nm; one surface of the mica sheet is coated with an ITO layer with a thickness of 135 nm, and the other opposite surface of the second substrate is coated with an ITO layer with a thickness of 13 nm; spin-coat MeO-2PACz on one of the ITO layers, and anneal at 100° C. for 10 min to form a hole transport layer with a thickness of 5 nm;

[0135] S2. At a rotation speed of 4500 rpm, the perovskite precursor is uniformly spin-coated on the hole transport layer 34 within 30 seconds, and the perovskite precursor is a mixture of methylammonium iodide, lead, iodine and an organic solvent, wherein the molar ratio of the methylammonium iodide, lead and iodine is methylammonium iodide, lead and iodine = 1:1:2, and the organic solvent is a mixed solvent of dimethylformamide and dimethyl sulfoxide in a volume ratio of 4:1; the ratio between the sum of the masses of methylammonium iodide, lead and iodine and the volume of the organic solvent is 812 mg:1 mL; then rotate at a rotation speed of 800 rpm for 5 seconds, and then at a rotation speed of 4500 rpm, 250 μL of anti-solvent chlorobenzene is uniformly dripped on the surface of the spin-coated film within 1 second, and annealed at 120°C for 15 minutes to form a perovskite layer 35 with a thickness of 600 nm on the hole transport layer 34;

[0136] S3, spin-coating a photoresist on the surface of the perovskite layer 35 to form a photoresist layer 38 with a thickness of 500 nm;

[0137] S4, exposing and developing the photoresist layer 38, removing the photoresist layer 38 located in the preset area, so that the perovskite layer 35 located directly below the preset area is exposed;

[0138] S5, depositing C60 on the remaining photoresist layer 38 and the exposed surface of the perovskite layer 35 to form a C60 layer with a thickness of 20 nm, and depositing BCP on the surface of the C60 layer to form a BCP layer with a thickness of 3 nm, and the C60 layer and the BCP layer constitute an electron transport layer 36;

[0139] S6, depositing copper on the electron transport layer 36 to form a metal electrode layer with a thickness of 100 nm;

[0140] S7, peeling off the electron transport layer 36 and the metal electrode layer formed on the surface of the remaining photoresist layer 38 together with the remaining photoresist layer 38 to form a metal array electrode 37, thereby obtaining a perovskite photodetector 3.

[0141] The liquid crystal device 2 includes liquid crystal 21, which is filled between the titanium dioxide unit 13 and the second conductive layer 31, and between the first substrate 11 and the second conductive layer 31. The liquid crystal 21 is covered with a shell 22, which is made of metal. The distance between the titanium dioxide unit 13 and the second conductive layer 31 is 4μm.

[0142] The method for preparing the liquid crystal device 2 comprises the following steps:

[0143] The metasurface device 1 and the perovskite detector 3 are aligned, and the shell frame of the shell 22 is arranged along the edge of the metasurface device 1 and the edge of the perovskite detector 3 to form a filling chamber with an opening at one end, and sealed with UV curing adhesive, and placed in a manner that the opening of the filling chamber faces upward, and the liquid crystal polymer is melted and filled into the filling chamber, and placed in a vacuum box. After repeated evacuation and degassing for 3 to 5 times and cooling, the shell cover of the shell 22 is sealed with UV curing adhesive to seal the opening of the filling chamber, and the liquid crystal device 2 is obtained.

[0144] This embodiment further provides a spectrometer array, including a plurality of spectrometer units, wherein the spectrometer units include a plurality of miniaturized spectrometers provided in this embodiment, and the plurality of spectrometer units are distributed in an array.

[0145] Example 3

[0146] This embodiment provides a miniaturized spectrometer, the structure of which is as follows: Figure 1 As shown, the miniaturized spectrometer includes a metasurface device 1, a liquid crystal array 2 and a perovskite photodetector 3 which are arranged in sequence.

[0147] The metasurface device 1 includes a first substrate 11 and a first conductive layer 12, wherein the first conductive layer 12 is coated on one surface of the first substrate 11, and a plurality of titanium dioxide units 13 distributed in an array are arranged on the other opposite surface of the first substrate 11; the first substrate 11 is a glass substrate; the first conductive layer 12 is an ITO (indium tin oxide) coating; and the titanium dioxide unit 13 is a symmetrical cross structure. The vertical bar width of the cross structure is W1, the horizontal bar width is W2, and the vertical bar width W1=W2=100nm; the vertical bar length of the cross structure is L1, the horizontal bar length is L2, and L1=L2=250nm; the vertical bar height and the horizontal bar height of the cross structure are both 1000nm; the center axis spacing between any two adjacent cross structures in the extension direction of the vertical bar is D1, and the center axis spacing between any two adjacent cross structures in the length direction of the horizontal bar is D2, and D1=D2=370nm.

[0148] The preparation method of the metasurface device 1 is as follows:

[0149] (1) preparing a glass substrate with an ITO layer, wherein the plane size of the glass substrate is 4 μm×4 μm, the thickness of the glass substrate is 1 mm, and the thickness of the ITO layer is 13 nm, and titanium dioxide is deposited on the surface with the ITO layer to form a titanium dioxide layer 14 with a thickness of 1000 nm;

[0150] (2) Spin-coating the resist on the titanium dioxide layer 14 and baking at 180° C. for 60 min to form a resist layer 15 with a thickness of 200 nm; the resist is PMMAA2;

[0151] (3) exposing and developing the anti-etching layer 15 to remove the anti-etching layer 15 in a predetermined area, so that the titanium dioxide layer 14 located directly below the predetermined area is exposed; the developing solution used for the developing treatment is a mixture of methyl isobutyl ketone and isopropyl alcohol in a volume ratio of 1:3;

[0152] (4) using an electron beam evaporator to deposit chromium on the surface of the remaining anti-corrosion layer 15 and the exposed surface of the titanium dioxide layer 14 to form a chromium layer 16 with a thickness of 30 nm;

[0153] (5) soaking the device obtained by the step (4) in a degumming solution, and then rinsing it to remove the chromium layer 16 formed on the anti-corrosion layer 15 together with the remaining anti-corrosion layer 15; the soaking temperature is 80° C., the soaking time is 10 hours; the degumming solution is Remover PG;

[0154] (6) using the remaining chromium layer 16 as a mask, performing reactive ion etching on the titanium dioxide layer 14 to remove the titanium dioxide layer 14 located directly below the predetermined area, and the titanium dioxide layer 14 located directly below the mask is protected, thereby forming a plurality of titanium dioxide units 13 distributed in an array;

[0155] (7) After removing the mask by immersion in a chrome removal solution, a metasurface device 1 is obtained. The chrome removal solution is a nitrate solution for removing the chrome mask.

[0156] The perovskite photodetector 3 includes a second conductive layer 31, a second substrate 32, a third conductive layer 33, a hole transport layer 34, a perovskite layer 35 and an electron transport layer 36 stacked in sequence. The electron transport layer 36 is provided with a metal array electrode 37 on the side away from the perovskite layer 35. The electron transport layer 36 includes a C60 layer and a BCP layer arranged in sequence. The material of the metal array electrode 37 is copper. The second conductive layer is an ITO layer, the third conductive layer is an ITO layer, the second substrate is a mica sheet, and the hole transport layer is a MeO-2PACz self-assembled layer.

[0157] The preparation method of the perovskite photodetector 3 comprises the following steps:

[0158] S1. Prepare a mica sheet with ITO, the plane size of the mica sheet is 4 μm×4 μm, and the thickness of the mica sheet is 15 μm; one surface of the mica sheet is coated with an ITO layer with a thickness of 135 nm, and the other opposite surface of the second substrate is coated with an ITO layer with a thickness of 13 nm; spin-coat MeO-2PACz on one of the ITO layers, and anneal at 100° C. for 15 min to form a hole transport layer with a thickness of 10 nm;

[0159] S2. At a rotation speed of 5000 rpm, a perovskite precursor is uniformly spin-coated on the hole transport layer 34 within 30 seconds. The perovskite precursor is a mixture of methylammonium iodide, lead, iodine and an organic solvent, wherein the molar ratio of the methylammonium iodide, lead and iodine is methylammonium iodide, lead and iodine = 1:1:2, and the organic solvent is a mixed solvent of dimethylformamide and dimethyl sulfoxide in a volume ratio of 4:1; the ratio between the sum of the masses of methylammonium iodide, lead and iodine and the volume of the organic solvent is 812 mg:1 mL; then rotate at a rotation speed of 800 rpm for 5 seconds, and then at a rotation speed of 500 rpm, 250 μL of anti-solvent chlorobenzene is uniformly dripped on the surface of the spin-coated film within 1 second, and annealed at 120°C for 15 minutes to form a perovskite layer 35 with a thickness of 575 nm on the hole transport layer 34;

[0160] S3, spin-coating a photoresist on the surface of the perovskite layer 35 to form a photoresist layer 38 with a thickness of 500 nm;

[0161] S4, exposing and developing the photoresist layer 38, removing the photoresist layer 38 located in the preset area, so that the perovskite layer 35 located directly below the preset area is exposed;

[0162] S5, depositing C60 on the remaining photoresist layer 38 and the exposed surface of the perovskite layer 35 to form a C60 layer with a thickness of 30 nm, and depositing BCP on the surface of the C60 layer to form a BCP layer with a thickness of 8 nm, and the C60 layer and the BCP layer constitute an electron transport layer 36;

[0163] S6, depositing copper on the electron transport layer 36 to form a metal electrode layer with a thickness of 80 nm;

[0164] S7, peeling off the electron transport layer 36 and the metal electrode layer formed on the surface of the remaining photoresist layer 38 together with the remaining photoresist layer 38 to form a metal array electrode 37, thereby obtaining a perovskite photodetector 3.

[0165] The liquid crystal device 2 includes liquid crystal 21, which is filled between the titanium dioxide unit 13 and the second conductive layer 31, and between the first substrate 11 and the second conductive layer 31. The liquid crystal 21 is covered with a shell 22, which is made of metal. The distance between the titanium dioxide unit 13 and the second conductive layer 31 is 3μm.

[0166] The method for preparing the liquid crystal device 2 comprises the following steps:

[0167] The metasurface device 1 and the perovskite detector 3 are aligned, and the shell frame of the shell 22 is arranged along the edge of the metasurface device 1 and the edge of the perovskite detector 3 to form a filling chamber with an opening at one end, and sealed with UV curing adhesive, and placed in a manner that the opening of the filling chamber faces upward, and the liquid crystal polymer is melted and filled into the filling chamber, and placed in a vacuum box. After repeated evacuation and degassing for 3 to 5 times and cooling, the shell cover of the shell 22 is sealed with UV curing adhesive to seal the opening of the filling chamber, and the liquid crystal device 2 is obtained.

[0168] This embodiment further provides a spectrometer array, including a plurality of spectrometer units, wherein the spectrometer units include a plurality of miniaturized spectrometers provided in this embodiment, and the plurality of spectrometer units are distributed in an array.

[0169] Effect Example 1

[0170] The miniaturized spectrometer provided in the above embodiment is tested, and the testing method is as follows:

[0171] The dark current of the miniaturized spectrometer was tested in a dark environment using a Keithley 2400 source meter, and the photocurrent was measured under sufficient light irradiation. The responsivity, external quantum efficiency, and detection capability were further calculated using the following formula:

[0172]

[0173]

[0174]

[0175] Where R is the responsivity, I ph is the photocurrent, I0 is the dark current, P in is the incident light power, λ is the incident light wavelength, h is Planck's constant, c is the speed of light, q is the charge, J light is the photocurrent density, J dark is the dark current density;

[0176] The results are as follows Figure 7 shown.

[0177] The incident light is spectrally reconstructed using a commercial spectrometer and the miniaturized spectrometer provided in the above embodiment, such as Figure 6As shown, the incident light is aligned and focused onto the metasurface device through a lens. By applying an external voltage, the metasurface device produces different transmission spectra, and the photocurrent is obtained through the detector. During the test, the magnitude of the applied voltage is changed 8 times, and the photocurrent and transmission spectrum obtained at different voltages are imported into the neural network training to reconstruct the incident spectrum. For details, please refer to "Deep-Learned Broadband Encoding Stochastic Filters for Computational Spectroscopic Instruments".

[0178] A broadband white light source is used to provide incident light. The spectrum of the incident light is changed by four different types of color filters. The four different incident lights are reconstructed. The results are as follows: Figure 8 As shown; the spectrum of the mercury lamp line is reconstructed, and the result is as follows Fig. 9 shown.

[0179] from Figures 8-9 It can be seen that the miniaturized spectrometer provided by the present invention can accurately reconstruct the broadband spectrum and the mercury lamp spectrum.

[0180] Precision refers to the accuracy of the reconstructed spectrum wavelength, that is, the degree of deviation between the reconstructed wavelength and the actual wavelength. During the test, the wavelength of the incident spectrum reconstructed by the miniaturized spectrometer is compared with the wavelength of the incident spectrum reconstructed by the commercial spectrometer to obtain the accuracy of the spectrum;

[0181] Resolution refers to the half-peak width of the narrowest incident spectrum that can be reconstructed by spectral reconstruction. During the test, the incident light with different half-peak widths of monochromatic light is reconstructed to test the half-peak width of the narrowest incident spectrum that can be reconstructed by spectral reconstruction;

[0182] The linear dynamic range is expressed in dB. During the test, the detector response is tested by gradiently changing the incident light of different powers to obtain the maximum power P that can respond. max and minimum power P min , the linear dynamic range DR is calculated according to the following formula: DR = 20 × lg (P max / P min );

[0183] The results are shown in Table 1.

[0184] Table 1

[0185] Test items Accuracy Resolution Linear dynamic range Example 1 0.5nm 0.4nm 149dB Example 2 0.5nm 0.5nm 149dB Example 3 0.5nm 0.4nm 120dB

[0186] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A miniaturized spectrometer, characterized in that: It includes a metasurface device, a liquid crystal array and a perovskite photodetector arranged in sequence, wherein the metasurface device includes a first substrate and a first conductive layer, the first conductive layer is covered on one surface of the first substrate, and a titanium dioxide layer is arranged on the other opposite surface of the first substrate; the perovskite photodetector includes a second conductive layer, a second substrate, a third conductive layer, a hole transport layer, a perovskite layer and an electron transport layer stacked in sequence, the electron transport layer is provided with a metal array electrode on a side away from the perovskite layer, and the electron transport layer includes a C60 layer and a BCP layer arranged in sequence.

2. The miniaturized spectrometer according to claim 1, characterized in that: The thickness of the titanium dioxide unit is 600-1000nm; And / or, the titanium dioxide unit is a cross structure, preferably a symmetrical cross structure.

3. The miniaturized spectrometer according to claim 1, characterized in that: The method for preparing the metasurface device comprises the following steps: (1) preparing a first substrate with a first conductive layer, and depositing titanium dioxide on the surface of the first conductive layer to form a titanium dioxide layer; (2) spin coating the resist on the surface of the titanium dioxide layer and baking to form a resist layer; (3) exposing and developing the anti-etching layer to remove the anti-etching layer in a predetermined area, so that the titanium dioxide layer directly below the predetermined area is exposed; (4) depositing chromium on the surface of the remaining anti-corrosion layer and the exposed surface of the titanium dioxide layer to form a chromium layer; (5) stripping the chromium layer formed on the resist layer together with the remaining resist layer; (6) using the remaining chromium layer as a mask, etching the titanium dioxide layer to remove the titanium dioxide layer directly below the predetermined area; (7) Peeling off the mask to obtain the metasurface device.

4. The miniaturized spectrometer according to claim 1, characterized in that: The liquid crystal device comprises liquid crystal, and the liquid crystal is filled between the titanium dioxide unit and the second conductive layer, and between the first substrate and the second conductive layer. The liquid crystal is covered with a shell, and the shell is made of metal.

5. The miniaturized spectrometer according to claim 1, characterized in that: The hole transport layer is any one of a CbzNaph self-assembled layer, a MeO-2PACz self-assembled layer and a 2PACz self-assembled layer; and the thickness of the hole transport layer is 5-10 nm.

6. The miniaturized spectrometer according to claim 1, characterized in that: The thickness of the perovskite layer is 575-600 nm.

7. The miniaturized spectrometer according to claim 1, characterized in that: The thickness of the electron transport layer is 23-38 nm, the thickness of the C60 layer is 20-30 nm, and the thickness of the BCP layer is 3-8 nm.

8. The spectrometer array according to claim 1, characterized in that: The method for preparing the perovskite photodetector comprises the following steps: S1, preparing a second substrate, wherein a second conductive layer is plated on one surface of the second substrate, and a third conductive layer is plated on another opposite surface of the second substrate; spin coating a hole transport material on the surface of the third conductive layer, and annealing the material to form a hole transport layer on the third conductive layer; S2, spin coating a perovskite precursor on the hole transport layer, and annealing to form a perovskite layer on the hole transport layer; S3, spin coating a photoresist on the perovskite layer to form a photoresist layer; S4, exposing and developing the photoresist layer to remove the photoresist layer in the preset area, so that the perovskite layer directly below the preset area is exposed; S5, depositing C60 on the remaining photoresist layer and the exposed surface of the perovskite layer to form a C60 layer, and depositing BCP on the surface of the C60 layer to form a BCP layer, wherein the C60 layer and the BCP layer constitute an electron transport layer; S6, depositing a metal electrode material on the electron transport layer to form a metal electrode layer; S7, peeling off the electron transport layer and the metal electrode layer formed on the surface of the remaining photoresist layer together with the remaining photoresist layer to obtain the perovskite photodetector.

9. A spectrometer array, characterized in that: It comprises a spectrometer array, comprising a plurality of spectrometer units, wherein the spectrometer units comprise a plurality of miniaturized spectrometers as claimed in any one of claims 1 to 8, and the plurality of spectrometer units are distributed in an array.

10. An angle-resolved spectrometer, characterized in that: Comprising the spectrometer array as claimed in claim 9.

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