Manufacturing method of substrate structure and substrate structure

Abstract

The invention discloses a manufacturing method of a substrate structure and the substrate structure, relates to the technical field of packaging substrates, and aims to solve the problem that the quality of a packaging substrate finally formed in the prior art is limited by the thickness of a core plate. The manufacturing method of the substrate structure comprises the following steps: providing a substrate with a first surface and a second surface which are opposite to each other; a through hole penetrating through the substrate is formed in the direction from the first surface to the second surface; forming a first conductive metal layer with pores on the substrate and the hole wall of the through hole; forming a hole plugging material on the first conductive metal layer and in the hole; removing the hole plugging material on the first conductive metal layer on the surface of the substrate by adopting a plasma etching mode so as to retain the hole plugging material in the hole; removing the first conductive metal layer on the surface of the substrate to reserve the first conductive metal layer in the through hole; and forming an inner metal circuit layer on the first conductive metal layer in the through hole, the hole plugging material in the hole and the surface of the substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of packaging substrates, and in particular to a manufacturing method of a substrate structure and a substrate structure. Background Art

[0002] The packaging substrate is an important material for device packaging. In advanced packaging, the cost of the substrate is much higher than that of conventional packaging. In high-speed signal transmission, due to the high requirements for the quality of signal transmission, it is necessary to minimize the right-angle bends in the signal transmission line and the corners in the line. For multi-layer interconnect packaging substrates, high-speed signal transmission requires the core board through holes and interlayer blind holes of the packaging substrate to be stacked vertically. In the actual production process, it is necessary to metallize the core board through holes and then fill them with resin. After the core board through holes are filled and the resin is cured, the resin on both sides of the core board through holes are removed by a grinding machine to expose the resin in the core board through holes, and then the surface is metallized and patterned to form the circuit on the core board.

[0003] Specifically, the brushing machine horizontally transmits the core plate by using multiple sets of symmetrical rollers for transmission and brushing. The movement of the core plate is driven by the rollers, and the brushing is also done by the rotating rollers. During the brushing process, the rollers exert a great force on the core plate to flatten the core plate, and other rollers can effectively brush.

[0004] However, in order to ensure that the core board is not damaged during the resin brushing process, the core board needs to be very thick. For example, conventional substrate resin plugging and brushing requires the core board to be more than 0.2mm thick. Core boards with a thickness of less than 0.2mm will tear during the brushing process, which will result in the quality of the final package substrate being limited by the thickness of the core board. Summary of the invention

[0005] The object of the present invention is to provide a method for manufacturing a substrate structure and a substrate structure, which are applicable to substrates of different thicknesses and improve the application range and quality of the substrate structure.

[0006] In order to achieve the above-mentioned object, in a first aspect, the present invention provides a method for manufacturing a substrate structure. The method for manufacturing a substrate structure comprises:

[0007] First, a substrate is provided; the surface of the substrate has a first surface and a second surface opposite to each other;

[0008] Next, a through hole is opened along the direction from the first surface to the second surface, penetrating the substrate;

[0009] Next, a first conductive metal layer is formed on the substrate and on the hole wall of the through hole, wherein the first conductive metal layer in the through hole has pores; the pores penetrate the substrate from the first surface to the second surface;

[0010] Next, forming a plugging material on the first conductive metal layer and in the pores;

[0011] Next, a portion of the plugging material is removed by plasma etching to retain the plugging material in the pore; the portion of the plugging material is the plugging material on the first conductive metal layer on the surface of the substrate;

[0012] Next, the first conductive metal layer on the surface of the substrate is removed to retain the first conductive metal layer in the through hole;

[0013] Next, an inner metal circuit layer is formed on the surface of the first conductive metal layer in the through hole, on the surface of the plugging material in the pore, and on the surface of the substrate.

[0014] Compared with the prior art method of removing by grinding with a brush, in the method for manufacturing the substrate structure provided by the present invention, since the plugging material is removed by plasma etching, the plasma etching gas is used under vacuum conditions to etch and remove the plugging material on the surface of the substrate by gas phase, and the plasma etching does not etch the first conductive metal layer used for manufacturing the substrate structure. Specifically, plasma etching is to use the etching gas ionosphere free radicals and ions in an electric field in a vacuum, and the plugging material located on the surface of the substrate is removed by the etching effect of the electric field, ions and free radicals on the plugging material, and no external force is applied to the substrate, thereby eliminating the probability of substrate damage. Therefore, the method for manufacturing the substrate structure provided by the present invention has no requirements for the thickness of the substrate, and can improve the quality of the substrate structure. Based on this, a substrate of any thickness that meets actual needs can be used to manufacture the substrate structure, and the thickness of the substrate is no longer limited by the method of removing the plugging material, thereby improving the application range and quality of the substrate structure.

[0015] In a second aspect, the present invention also provides a substrate structure, which is manufactured by the manufacturing method of the substrate structure described in the above technical solution. The substrate structure includes: a substrate, a first conductive metal layer, a plugging material, and an inner metal circuit layer. The surface of the substrate has a first surface and a second surface opposite to each other, and the substrate has a through hole that penetrates the substrate from the first surface to the second surface. The first conductive metal layer is formed on the hole wall of the through hole, and the first conductive metal layer located in the through hole has a pore, and the pore penetrates the substrate from the first surface to the second surface. The plugging material is formed on the first conductive metal and is located in the pore, and the inner metal circuit layer is formed on the surface of the first conductive metal layer located in the through hole, on the surface of the plugging material located in the pore, and on the surface of the substrate.

[0016] Compared with the prior art, the beneficial effects of the substrate structure provided by the present invention are the same as the beneficial effects of the method for manufacturing the substrate structure described in the above technical solution, and are not described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0018] Figure 1 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 1 ;

[0019] Figure 2 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 2 ;

[0020] Figure 3 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 3 ;

[0021] Figure 4 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 4 ;

[0022] Figure 5 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 5 ;

[0023] Figure 6 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 6 ;

[0024] Figure 7 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 7 ;

[0025] Figure 8 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 8 ;

[0026] Fig. 9 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 9 ;

[0027] Fig.10 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 ;

[0028] Fig.11 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 one;

[0029] Fig.12 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 two;

[0030] Fig.13A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 three;

[0031] Fig.14 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 Four;

[0032] Fig.15 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 five;

[0033] Fig.16 A cross-sectional view of a package substrate during the manufacturing process in the prior art Figure 10 six;

[0034] Fig.17 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 1 ;

[0035] Fig.18 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 ;

[0036] Fig.19 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 3 ;

[0037] Fig. 20 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 4 ;

[0038] Fig.21 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 5 ;

[0039] Fig. 22 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 6 ;

[0040] Fig.23 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 7 ;

[0041] Fig.24 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 8 ;

[0042] Fig.25 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 9 ;

[0043] Fig.26 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 ;

[0044] Fig. 27 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 one;

[0045] Fig.28 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 two;

[0046] Fig.29 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 three;

[0047] Fig.30 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 Four;

[0048] Fig.31 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 five;

[0049] Fig.32 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 six;

[0050] Fig.33 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 seven;

[0051] Fig.34 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 eight;

[0052] Fig.35 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 10 Nine;

[0053] Fig.36 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 ten;

[0054] Fig.37 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 eleven;

[0055] Fig.38 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 twelve;

[0056] Fig.39 A cross-sectional view of the substrate structure during the manufacturing process in an embodiment of the present invention Figure 2 Thirteen.

[0057] Reference numerals:

[0058] 1-substrate, 10-core board, 11-copper board, 12-through hole, 13-pore; 20-copper layer, 21-first electroplated copper layer, 22-hole plugging material, 23-chemical copper plating layer, 24-second electroplated copper layer, 25-graphic mask layer, 26-inner metal circuit layer, 27-insulating layer, 28-blind hole, 29-outer metal circuit layer, 30-solder mask layer, 31-solder ball; 4-first conductive metal layer, 40-copper conductive layer, 41-electroplated copper conductive layer, 5-second conductive metal layer, 6-graphic mask, 7-third conductive metal layer, 8-fourth conductive metal layer, 90-fifth conductive metal layer, 91-solderability anti-oxidation layer. DETAILED DESCRIPTION

[0059] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0060] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0061] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.

[0062] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0063] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] In conjunction with the background technology, see Figures 1 to 16 , describes in detail the manufacturing process of the packaging substrate in the prior art:

[0065] Step 1: See Figure 1 and Figure 2 A through hole 12 is provided along the height direction of the substrate 1 and passes through the substrate 1. The substrate 1 comprises a core board 10 and a copper board 11 covering the first and second surfaces of the core board 10. The thickness of the substrate 1 is greater than 0.2 mm, and the thickness of the copper board 11 on each surface is greater than or equal to 5 μm.

[0066] Step 2: See Figure 3 , chemical copper plating is first performed on the surface of the substrate 1 and on the wall of the through hole 12 to form a copper layer 20, the thickness of which is generally about 1 micron. Then, a first electroplated copper layer 21 is formed on the surface of the copper layer 20, the thickness of which is generally greater than or equal to 15 microns. The first electroplated copper layer 21 located in the through hole 12 has a pore 13, and the pore 13 penetrates the substrate 1 along the height direction of the substrate 1.

[0067] Step 3: See Figure 4 A plugging material 22 is formed on the first electroplated copper layer 21 and in the pores 13 .

[0068] Exemplarily, the plugging material 22 is generally a liquid resin. The liquid resin is filled into the pores 13 using a vacuum plugging machine or a screen printer, and then the liquid resin is cured to fix the resin in the pores 13 .

[0069] Step 4: See Figure 5 , the plugging material 22 located on both sides of the first electroplated copper layer 21 is removed by grinding.

[0070] In the prior art, a brushing machine is generally used to brush away the plugging material on both sides of the first electroplated copper layer. Specifically, the brushing machine includes two layers of evenly distributed brush rollers, and the brush rollers themselves are also grinding wheels. The structure to be brushed (i.e., the structure formed in step three) is placed between the two layers of brush rollers. The brush rollers rotate to push the structure to be brushed forward, and the middle brush roller rotates to brush the surface of the structure to be brushed. The front and rear brush rollers need to apply great pressure and tension to the structure to be brushed to drive the structure to be brushed forward. During the forward movement of the structure to be brushed, the brush rollers brush the surface of the structure to be brushed to remove the resin (i.e., the plugging material) located on the surface of the first electroplated copper layer. After the resin located on the surface of the first electroplated copper layer is brushed away, in order to ensure that the resin is brushed cleanly, a portion of the first electroplated copper layer on the surface of the substrate needs to be brushed away. Because the front and rear two brush rollers will exert a great tension on the substrate, the substrate must be flattened to effectively brush the resin, so the substrate thickness must be greater than 0.2 mm, otherwise the substrate will be torn by the brush rollers. When the substrate thickness is greater than 0.2 mm, but the thickness of the first electroplated copper layer located on the surface of the substrate is less than 15 microns, the tension of the front and rear two brush rollers will tear the first electroplated copper layer located on the surface of the substrate. Alternatively, the sum of the thickness of the copper plate on the surface of the core board and the first electroplated copper layer located on the surface of the substrate cannot be less than 12 microns. If it is less than 12 microns, the tension of the front and rear two brush rollers will tear the first electroplated copper layer located on the surface of the substrate. It should be understood that the brush machine, as a brushing equipment, is a large-scale equipment in the substrate processing process, which will occupy a large area and also have many environmental protection treatment requirements. Furthermore, the above-mentioned first electroplated copper layer must be complete and can have holes, but cannot have graphics (that is, there can be no circuits on the first electroplated copper layer).

[0071] Step 5: See Figure 6 A chemical copper plating layer 23 is formed on the surface of the first electroplated copper layer 21 and on the surface of the plugging material 22, and the thickness of the chemical copper plating layer 23 is greater than or equal to 1 micron.

[0072] Step 6: See Figure 7 A second electroplated copper layer 24 is formed on the surface of the chemically plated copper layer 23. The thickness of the second electroplated copper layer 24 is greater than or equal to 10 microns to ensure that it can withstand the laser drilling process in the subsequent laser drilling process to form blind holes, and at the same time ensure that it can withstand the stress formed by the thermal expansion of the plugging material in various high temperature environments.

[0073] Step 7: See Figure 8 A pattern mask layer 25 is formed on the second electroplated copper layer 24 by photolithography, and the pattern mask layer 25 at least covers the second electroplated copper layer 24 corresponding to the through hole 12 .

[0074] Step 8: See Fig. 9 and Fig.10 , the structure exposed outside the pattern mask layer 25 and located on the surface of the core board 10 is removed to form the hole pad and the inner metal circuit layer 26. The inner metal circuit layer 26 includes the copper plate 11, the copper layer 20, the first electroplated copper layer 21, the chemically plated copper layer 23 and the second electroplated copper layer 24.

[0075] Step 9: See Fig.10 , remove the pattern mask layer 25.

[0076] Step 10: See Fig.11 , an insulating layer 27 is laminated on the surface of the core board 10 , the hole pad and the inner metal circuit layer 26 .

[0077] Step 11: See Fig.12 A blind hole 28 is opened on the insulating layer 27 by laser drilling, and the blind hole 28 is connected to the second electroplated copper layer 24 corresponding to the through hole 12.

[0078] Step 12: See Fig.13 , a first outer metal circuit layer 29 is formed on the insulating layer 27 and in the blind hole 28.

[0079] Step 13: See Fig.14 , laser drilling and outer layer circuit processing are repeated on the first outer metal circuit layer 29 to form a multi-layer vertical stacked outer metal circuit layer 29. The vertically stacked blind vias 28 above the through holes 12 allow the signal to be directly transmitted from the core board 10 to the surface pad of the substrate 1 through the stacked blind vias 28, with the shortest path, minimum transmission loss and minimum radiation loss.

[0080] Step 14: See Fig.15 A solder resist layer 30 is formed on the outermost outer metal circuit layer 29 , and the solder resist layer 30 exposes a portion of the outermost outer metal circuit layer 29 .

[0081] Step 15: See Fig.16 , a solder ball 31 is formed on a portion of the outer metal circuit layer 29 exposed by the solder resist layer 30 .

[0082] In summary, since the thickness of the copper plate on the surface of the core board is greater than or equal to 5 microns, the thickness of the first electroplated copper layer formed on the surface of the copper layer in step 2 is greater than or equal to 15 microns, and the thickness of the second electroplated copper layer formed on the surface of the chemically plated copper layer in step 6 is greater than or equal to 10 microns, no matter how it is optimized, the thickness of the metal layer on the surface of the core board is not less than 25 microns. For such a thick metal layer, when the circuit is manufactured by etching (i.e., manufactured by subtractive method), the line width and line spacing will usually exceed 70 microns (for example, the line width and line spacing is greater than 75 microns), and it is impossible to manufacture fine circuits with a line width of less than 50 microns.

[0083] In order to solve the above technical problems, in a first aspect, an embodiment of the present invention provides a method for manufacturing a substrate structure. Figures 17 to 39 , the manufacturing method of the substrate structure includes:

[0084] First, see Fig.17 A substrate 1 is provided, wherein the surface of the substrate 1 has a first surface and a second surface opposite to each other. It should be noted that the surface of the substrate 1 also includes a side surface.

[0085] Exemplarily, the substrate 1 may be a core board 10 commonly used in the prior art, or the substrate 1 includes a core board 10 and a copper board 11 covering the first and second surfaces of the core board 10. The thickness of the substrate 1 is not specifically limited here and can be selected according to actual needs. In the method for manufacturing the substrate structure, the substrate 1 including the core board 10 and the copper board 11 covering the first and second surfaces of the core board 10 is described as an example.

[0086] Next, see Fig.18 , a through hole 12 penetrating the substrate 1 is provided along the direction from the first surface to the second surface;

[0087] For example, the number of the through holes 12 can be set according to actual needs, for example, 1, 2 or more. When the number of through holes 12 is multiple, the multiple through holes 12 are spaced apart along the length direction of the substrate 1. As for the aperture and shape of the through holes 12, they can be set according to actual needs and are not specifically limited here.

[0088] Next, see Fig.19 and Fig. 20 A first conductive metal layer 4 is formed on the substrate 1 and on the hole wall of the through hole 12, and the first conductive metal layer 4 located in the through hole 12 has a pore 13; the pore 13 penetrates the substrate 1 from the first surface to the second surface;

[0089] Exemplarily, chemical copper plating is first performed on the substrate 1 and the hole wall of the through hole 12 to form a copper conductive layer 40, and the thickness of the copper conductive layer is generally about 1 micron. Then, an electroplated copper conductive layer 41 is formed on the surface of the copper conductive layer 40, and the thickness of the electroplated copper conductive layer is generally about 15 microns. The stack of the above-mentioned copper conductive layer 40 and the electroplated copper conductive layer 41 is the first conductive metal layer 4. It should be noted that the material of the above-mentioned first conductive metal layer 4 is not limited to copper, and can also be other materials that meet practical requirements. Furthermore, the size, shape, etc. of the above-mentioned pores 13 only need to meet practical requirements, and are not specifically limited here.

[0090] Next, see Fig.21 , forming a plugging material 22 on the first conductive metal layer 4 and in the pores 13;

[0091] The plugging material can be made of a material whose thermal expansion coefficient matches that of other parts in the substrate structure, such as a high-temperature resistant resin material. In this way, during the subsequent high-temperature pressing process of the substrate structure, it can be ensured that the plugging material will not explode due to the mismatch of the expansion coefficient, and the metal circuit on the surface of the plugging material will not burst, causing open circuits and other problems that affect reliability. For two-layer circuit boards, since high-temperature pressing is not required, solder resist green oil with a larger thermal expansion coefficient can be used as the plugging material. It should be understood that the specific material of the plugging material can also be adjusted according to the actual needs of the prepared substrate structure. As a possible implementation method, the above-mentioned plugging material is a dry film type plugging resin material, such as ABF resin and RCC resin.

[0092] Exemplarily, when the plugging material is a dry film plugging resin material, forming the plugging material on the first conductive metal layer and in the pores includes: forming the plugging material on the first conductive metal layer and in the pores by vacuum pressing.

[0093] Specifically, the dry film type plugging resin material is filled into the pores and formed on the first conductive metal layer by vacuum pressing. Compared with the prior art of using a vacuum plugging machine or a screen printer to fill the liquid resin into the pores, the method used in the embodiment of the present invention can ensure that the thickness of the plugging material finally formed is uniform and consistent, and reduce or avoid the occurrence of voids. Furthermore, the vacuum pressing method can remove bubbles in the pores and on the surface of the pores.

[0094] Next, see Fig. 22 , a portion of the plugging material 22 is removed by plasma etching to retain the plugging material 22 located in the pore 13; the portion of the plugging material 22 is the plugging material 22 located on the first conductive metal layer 4 on the surface of the substrate 1;

[0095] As a possible implementation method, when the plugging material is a dry film plugging resin material, in the process of filling the dry film plugging resin material into the pores by vacuum pressing and forming it on the first conductive metal layer, low-temperature baking is selected to low-temperature cure the dry film plugging resin material to an incompletely cured state. At this time, the dry film plugging resin material has a certain rigidity and strength, and has a good bonding force with the first conductive metal layer. In addition, the dry film plugging resin material itself is slightly soft at this time, and the etching speed is fast when plasma etching is used, which can improve the processing efficiency. That is, when the dry film plugging resin material is cured to an incompletely cured state, plasma etching is used to remove part of the dry film plugging resin material to retain the dry film plugging resin material in the pores; wherein the incompletely cured state is 60% to 80% of the dry film plugging resin material is cured.

[0096] After removing part of the plugging material by plasma etching to retain the plugging material in the pores, the method for manufacturing the substrate structure further includes: completely curing the dry film plugging resin material in the pores.

[0097] As a possible implementation manner, the above plasma etching method includes inductively coupled plasma etching.

[0098] As a possible implementation method, the above-mentioned plasma etching can adopt a single-sided etching method or a double-sided etching method. Preferably, in an embodiment of the present invention, when a portion of the plugging material is removed by plasma etching, a single-sided etching method is adopted. That is, after the plugging material on one side is removed, the plugging material on the other side is removed. Compared with the double-sided removal method, the single-sided etching method can improve the etching efficiency, improve the uniformity, and achieve better results. Furthermore, when the single-sided removal method is adopted, the plugging material on one side is removed while the other side is not removed. At this time, the other side that has not been removed can be protected to prevent the substrate from being subjected to excessive force, thereby avoiding damage to the substrate. In other words, the single-sided removal method can cause the substrate to be subjected to force on one side, thereby avoiding excessive force on the substrate due to the simultaneous force on both sides of the substrate, thereby avoiding damage to the substrate.

[0099] In an optional manner, next, the surface of the plugging material in the pore is roughened to form a rough surface of the plugging material, thereby improving the bonding strength of a film layer formed on the surface of the plugging material later.

[0100] Next, see Fig.23 and Fig.24 , removing the first conductive metal layer 4 located on the surface of the substrate 1 to retain the first conductive metal layer 4 located in the through hole 12;

[0101] Exemplarily, the first conductive metal layer 4 located on the surface of the substrate 1 is removed by using a corrosive liquid. Specifically, a copper corrosive liquid is used to remove the laminate of the copper conductive layer 40 and the electroplated copper conductive layer 41 located on the surface of the substrate 1. When the substrate 1 includes a core board 10 and a copper plate 11 covering the first side and the second side of the core board 10, the corrosive liquid will also remove the copper plates 11 located on both sides of the core board 10. It should be noted that in the process of removal, the first conductive metal layer 4 at the through hole 12 will inevitably be removed, and at this time, the first conductive metal layer 4 located in the through hole 12 will be sunken relative to both the first side and the second side of the substrate 1.

[0102] Next, see Figure 24 to Figure 28 An inner metal circuit layer 26 is formed on the surface of the first conductive metal layer 4 located in the through hole 12, on the surface of the plugging material 22 located in the pore 13, and on the surface of the substrate 1.

[0103] As a possible implementation, the specific steps of forming an inner metal circuit layer on the surface of the first conductive metal layer in the through hole, on the surface of the plugging material in the pore, and on the surface of the substrate include:

[0104] First, see Fig.24 , forming a second conductive metal layer 5 on the surface of the first conductive metal layer 4 located in the through hole 12, on the surface of the plugging material 22 located in the pore 13, and on the surface of the substrate 1;

[0105] Exemplarily, chemical copper deposition is performed on the surface of the first conductive metal layer 4 in the through hole 12, on the surface of the plug material 22 in the pore 13, and on the surface of the substrate 1 to form a conductive copper layer (i.e., the second conductive metal layer 5). The thickness of the second conductive metal layer is greater than or equal to 0.2 mm and less than or equal to 1 mm. For example, the thickness of the second conductive metal layer can be 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, or 1 mm. It should be noted that the material of the second conductive metal layer 5 is not limited to copper, but can also be other materials that meet actual requirements, and the thickness direction of the second conductive metal layer is consistent with the direction from the first surface to the second surface.

[0106] Next, see Fig.25 , forming a pattern mask 6 on the surface of the second conductive metal layer 5, wherein the pattern mask 6 at least exposes the second conductive metal layer 5 corresponding to the through hole 12;

[0107] Exemplarily, a mask layer is formed on the entire surface of the second conductive metal layer, and then the mask layer is subjected to photolithography patterning to form a pattern mask.

[0108] Next, see Fig.26 , forming a third conductive metal layer 7 on the area of ​​the second conductive metal layer 5 exposed outside the pattern mask 6;

[0109] Exemplarily, the third conductive metal layer 7 is formed by electroplating on the area of ​​the second conductive metal layer 5 exposed outside the pattern mask 6. The material of the third conductive metal layer 7 can be copper, and of course it can also be other materials that meet actual needs. For example, the third conductive metal layer can be a Ti adhesion layer deposited by sputtering and a copper conductive layer with a thickness greater than or equal to 0.2 mm and less than or equal to 1 mm. The size of the third conductive metal layer 7 corresponding to the through hole 12 is greater than the diameter of the through hole 12.

[0110] Next, see Figure 26 to Figure 28 , removing the pattern mask 6 and the second conductive metal layer 5 exposed outside the third conductive metal layer 7;

[0111] Exemplarily, the pattern mask 6 is stripped, and the second conductive metal layer 5 exposed outside the third conductive metal layer 7 is removed by rapid etching. The third conductive metal layer 7 and the second conductive metal layer 5 corresponding to the third conductive metal layer 7 form an inner metal circuit layer 26, and the third conductive metal layer 7 corresponding to the through hole 12 can be defined as a metallized pad.

[0112] During the rapid etching process, the entire substrate is exposed to the rapid etching liquid, and the etching rate of the etching liquid on the second conductive metal layer is faster, and the etching rate on the third conductive metal layer is slower. For example, the etching rate of the rapid etching liquid on the second conductive metal layer is usually about 3 times that of the third conductive metal layer. After the second conductive metal layer is etched clean, usually only a small amount of the third conductive metal layer is etched away, so that high-precision metal circuit manufacturing can be guaranteed.

[0113] Combined with the above description, since the thickness of the second conductive metal layer is greater than or equal to 0.2 mm and less than or equal to 1 mm, and the inner metal circuit layer is made by the additive method, a fine circuit with a line width and line spacing of less than 10 microns can be made. It should be noted that in the embodiment of the present invention, the size of the line width and line spacing is not limited by the thickness of the third conductive metal layer.

[0114] As a possible implementation manner, after forming an inner metal circuit layer on the surface of the first conductive metal layer in the through hole, on the surface of the plugging material in the pore, and on the surface of the substrate, the method for manufacturing the substrate structure further includes:

[0115] First, see Fig.29 , forming an insulating layer 27 on the inner metal circuit layer 26;

[0116] Exemplarily, the insulating layer 27 is manufactured by vacuum lamination.

[0117] Next, see Fig.30 A blind hole 28 is opened on the insulating layer 27, and the blind hole 28 is connected to the third conductive metal layer 7 corresponding to the through hole 12; the above-mentioned blind hole 28 is used to form a vertical electrical connection between the inner metal circuit layer 26 and the outer metal circuit layer 29.

[0118] For example, a blind hole can be opened on the insulating layer by laser drilling. Since the laser drilling process will produce slag, such as slag produced by melting back resin and laser processing glass fiber and copper foil, the substrate can be placed in a slag removal tank to remove the slag in the blind hole.

[0119] Next, see Figure 31 to Figure 36 , forming at least one outer metal circuit layer 29 on the insulating layer 27 and in the blind hole 28;

[0120] For example, see Fig.31 First, a fourth conductive metal layer 8 (for example, a copper conductive layer) is formed on the insulating layer 27 and in the blind hole 28. Then, referring to Fig.32 , a pattern mask 6 is formed on the fourth conductive metal layer 8, and the pattern mask 6 at least exposes the fourth conductive metal layer 8 corresponding to the blind hole 28. Then, referring to Fig.33 , a fifth conductive metal layer 90 is formed on the area of ​​the fourth conductive metal layer 8 exposed outside the pattern mask 6. Then, referring to Fig.34 , remove the pattern mask 6 and the fourth conductive metal layer 8 exposed outside the fifth conductive metal layer 90, and the fifth conductive metal layer 90 and the fourth conductive metal layer 8 corresponding to the fifth conductive metal layer 90 form an outer metal circuit layer 29. The thickness of the fourth conductive metal layer is about 1 micron, and the thickness of the fifth conductive metal layer is greater than or equal to 15 microns and less than or equal to 20 microns. Fig.35 and Fig.36 , repeat the above steps to form multiple stacked outer metal circuit layers on the inner metal circuit layer. Combined with the above description, in the embodiment of the present invention, the inner metal circuit layer and the outer metal circuit layer on the surface of the substrate have no restrictions on line width and line spacing, and line processing with a line width and line spacing of less than 10 microns can be achieved.

[0121] Next, see Figure 37 to Figure 39 A solder resist layer 30 and solder balls 31 are formed on the outermost outer metal circuit layer 29 .

[0122] For example, see Fig.37 In order to prevent the solder from overflowing and causing a short circuit during the subsequent soldering process, a solder resist layer 30 can be formed on the outermost outer metal circuit layer 29. The solder resist layer 30 exposes a portion of the outermost outer metal circuit layer 29, see Fig.38 , apply a solderability anti-oxidation layer 91 to the exposed locations. Fig.39 , forming solder balls 31 on the solderable anti-oxidation layer 91. The solderable anti-oxidation layer 91 can not only prevent the exposed position from being oxidized and protect the outer metal circuit layer 29, but also improve the solderability of the solder balls 31. In an example, the material of the solderable anti-oxidation layer 91 can be OSP, NiAu, NiPdAu, or Sn alloy.

[0123] It should be noted that the manufacturing process of the inner metal circuit layer, the outer metal circuit layer, the blind hole, the solder ball, etc. described in all the above embodiments can be performed on a single side of the substrate, or on both the first side and the second side. When the manufacturing process is performed on both the first side and the second side of the substrate, the manufacturing method of the substrate structure provided by the embodiment of the present invention can be performed on both the first side and the second side of the substrate at the same time, so as to form two upper and lower inner blind holes opposite to each other in the through hole of the substrate, and then form two upper and lower inner metal circuit layers on the surfaces of the two inner blind holes respectively, and further form a substrate structure including multiple outer metal circuit layers that is symmetrical from top to bottom. The embodiment of the present invention does not limit whether the manufacturing method of the provided substrate structure is performed on a single side of the substrate or on both the first side and the second side.

[0124] Compared with the prior art method of removing by grinding with a brush, in the method for manufacturing the substrate structure provided by the embodiment of the present invention, since the plugging material is removed by plasma etching, plasma etching is to etch and remove the plugging material on the surface of the substrate by gas phase under vacuum conditions, and plasma etching does not etch the first conductive metal layer used for manufacturing the substrate structure. Specifically, plasma etching is to etch the gas ionosphere free radicals and ions in an electric field in a vacuum, and remove the plugging material on the surface of the substrate through the etching effect of the electric field, ions and free radicals on the plugging material, without applying external force to the substrate, thereby eliminating the probability of substrate damage. Therefore, the method for manufacturing the substrate structure provided by the embodiment of the present invention has no requirements for the thickness of the substrate, and can improve the quality of the substrate structure. Based on this, a substrate of any thickness that meets actual needs can be used to manufacture the substrate structure, and the thickness of the substrate is no longer limited by the method of removing the plugging material, thereby improving the application range and quality of the substrate structure. Furthermore, since the etching gas of plasma etching does not exert a large force on the substrate, the substrate surface does not need to be protected by a film layer with a thickness of more than 12 microns, nor does it need the substrate to be thicker than 0.2 mm.

[0125] As a possible implementation method, before removing part of the plugging material by plasma etching to retain the plugging material in the pores, the method for manufacturing the substrate structure also includes: removing part of the plugging material by chemical mechanical polishing to obtain a pre-treated substrate.

[0126] After obtaining the pre-treated substrate, removing part of the plugging material by plasma etching to retain the plugging material in the pores includes: removing the plugging material on the pre-treated substrate by plasma etching to retain the plugging material in the pores.

[0127] For example, see Fig. 22First, the plugging material 22 on the first surface of the first conductive metal layer 4 is removed by single-sided grinding using chemical mechanical polishing until the first surface of the first conductive metal layer 4 is exposed. Next, the plugging material 22 on the second surface of the first conductive metal layer 4 is removed by single-sided grinding using chemical mechanical polishing until the second surface of the first conductive metal layer 4 is exposed. Then, see Fig.23 , plasma etching is used to remove the plugging material 22 remaining on the surface of the first conductive metal layer 4, and the plugging material 22 located at the through hole 12 is removed according to actual needs.

[0128] Combined with the above description, it can be known that the embodiment of the present invention can also use chemical mechanical polishing (CMP) to remove the plugging material located on the surface of the substrate. Specifically, on the vacuum adsorption or temporary bonding polishing head of the square substrate, the CMP polishing head is used to remove the plugging material (such as plugging resin) located on one side of the substrate. Since the CMP equipment uses chemical mechanical polishing, the polishing head removes the plugging material located on the surface of the substrate with high precision, and the force applied by the polishing head to the surface of the substrate is very small, and will not damage the substrate, the thin layer of metal (such as the first conductive metal layer) and the metal circuit on the surface of the substrate. After the plugging material on the polished surface of the substrate is completely removed, and the first conductive metal layer and circuit on the surface of the substrate are exposed, the substrate is reversed to remove the plugging material on the other side of the substrate. Specifically, on the vacuum polishing table, the plugging material on the other side of the substrate is removed by CMP using a polishing head. The plugging material on the surface of the substrate is removed by chemical mechanical polishing, the first conductive metal layer and circuit on the surface of the substrate are exposed, and the removal of the plugging material on both sides of the substrate is completed. Afterwards, plasma etching is performed to remove the plugging material at the hole mouth of the substrate from which the surface plugging material has been removed by CMP, so that the plugging material at the hole mouth of the pore is removed until the surface of the plugging material at the hole mouth is sunken by 0 microns to 20 microns relative to the surface of the core board. The plasma etching can be two single-sided removals of inductively coupled plasma etching, or one double-sided removal of ordinary plasma etching.

[0129] In summary, in the embodiment of the present invention, plasma etching can be used to remove part of the plugging material, or chemical mechanical polishing and plasma etching can be used in combination to remove part of the plugging material.

[0130] As a possible implementation, along the direction perpendicular to the first surface to the second surface, the projection of the plugging material 22 in the pore 13 on the substrate 1 is located inside the substrate 1. Exemplarily, one end surface of the plugging material 22 in the pore 13 is flush with the surface of the substrate 1, and the other end surface of the plugging material 22 in the pore 13 is concave relative to the surface of the substrate 1. Or, both end surfaces of the plugging material 22 in the pore 13 are flush with the surface of the substrate 1. Or, see Fig.24 Both end surfaces of the plugging material 22 located in the pore 13 are concave relative to the surface of the substrate 1 .

[0131] In an optional manner, the minimum height difference between the first surface of the substrate and the plugging material located in the pore is greater than or equal to 0 microns and less than or equal to 20 microns; and / or, the minimum height difference between the second surface of the substrate and the plugging material located in the pore is greater than or equal to 0 microns and less than or equal to 20 microns; the direction of the height difference is consistent with the direction from the first surface to the second surface. Exemplarily, the minimum height difference between the first surface (and / or the second surface) of the substrate and the plugging material located in the pore is 0 microns, 1 micron, 5 microns, 10 microns, 12 microns, 15 microns, 18 microns or 20 microns, etc. Preferably, the minimum height difference between the first surface of the substrate and the plugging material located in the pore is greater than or equal to 10 microns and less than or equal to 20 microns; and / or, the minimum height difference between the second surface of the substrate and the plugging material located in the pore is greater than or equal to 10 microns and less than or equal to 20 microns, and the direction of the height difference is consistent with the direction from the first surface to the second surface.

[0132] In the embodiment of the present invention, the minimum height difference between the first surface of the substrate and the plugging material in the pore is 10 microns, and the minimum height difference between the second surface of the substrate and the plugging material in the pore is 10 microns.

[0133] In the embodiments of the present invention, see Fig.24 , the first conductive metal layer 4 in the through hole 12 is sunken relative to the first and second surfaces of the substrate 1, and the end surface of the plugging material 22 in the pore 13 is located between the first and second surfaces of the substrate 1. At this time, the thickness of the third conductive metal layer 7 corresponding to the through hole 12 is relatively thick. Based on this, cracking caused by the third conductive metal layer 7 at the through hole 12 being too thin in the later packaging process can be avoided, so as to improve the quality and reliability of the substrate structure.

[0134] As a possible implementation method, in the embodiment of the present invention, see Fig.24, the first conductive metal layer 4 in the through hole 12 is sunken relative to both end surfaces of the plugging material 22 in the pore 13. At this time, the thickness of the third conductive metal layer 7 formed on the first conductive metal layer 4 in the through hole 12 can be further increased to further avoid cracking due to the third conductive metal layer 7 at the through hole 12 being too thin during the later packaging process, thereby improving the quality and reliability of the substrate structure.

[0135] Furthermore, in the embodiment of the present invention, the structure of the through hole 12 is symmetrical in the vertical direction.

[0136] In summary, in the embodiment of the present invention, plasma etching adopts the inductively coupled plasma etching (i.e., inductively coupled plasma etching) method, and each time the plugging material on one side of the substrate is removed, when the plugging material on the surface of this side of the substrate is removed, the etching time is extended to remove the plugging material at the pore opening until the surface of the plugging material at the pore opening is sunken 0 microns to 20 microns relative to the surface of the core board. By adopting the single-sided removal method, during the process of removing the plugging material on one side, the other side is not removed, and at this time, the other side that is not removed can be protected to prevent it from being subjected to too much force, so as to avoid damage to the substrate.

[0137] Furthermore, plasma etching utilizes the etching of gas ionosphere free radicals and ions in an electric field in a vacuum, and removes the plugging material on the surface of the substrate through the etching effect of the electric field, ions and free radicals on the plugging material, and no external force is applied to the substrate, so there is no requirement for the thickness of the substrate; at the same time, there is no requirement for the total thickness of the second conductive metal layer and the third conductive metal layer on the surface of the substrate, and the total thickness of the second conductive metal layer and the third conductive metal layer on the surface of the substrate does not need to be controlled. Before plasma etching, a circuit pattern can be manufactured on the surface of the substrate.

[0138] Furthermore, the method for removing the plugging material provided in the embodiment of the present invention (i.e., the plasma etching method, or the chemical mechanical polishing and plasma etching method) can be used not only for 510mm×515mm substrates, but also for 12-inch substrates. It can be seen that the above-mentioned method for removing the plugging material can be used for the production of large-format substrate structures, and has very outstanding technical advantages and good technical effects for realizing vertical stacking wiring of the plugging material of the large-format substrate structure. Furthermore, the other descriptions in the foregoing and combined with the above-mentioned method for removing the plugging material, in the embodiment of the present invention, can not only realize the protection of the substrate and the no requirement for the thickness of the substrate, but also realize the line processing and vertical stacking of fine lines and wide line spacing. At this time, it is beneficial to improve the wiring density of the substrate structure, reduce the number of wiring layers, and reduce costs.

[0139] In addition, since the surface of the plugging material filled by the vacuum plugging machine or the screen printing machine is uneven, it can only be polished by a brushing machine, which does not meet the requirements of chemical mechanical polishing and plasma etching. However, in the embodiment of the present invention, since the dry film plugging resin material is filled into the pores and formed on the first conductive metal layer by vacuum pressing, the surface flatness of the plugging resin is very high, which meets the requirements of removing the plugging resin by plasma etching, or chemical mechanical polishing and plasma etching.

[0140] In a second aspect, an embodiment of the present invention further provides a substrate structure, which is manufactured using the manufacturing method of the substrate structure described in the above technical solution.

[0141] See also Fig.29 The substrate structure includes: a substrate 1, a first conductive metal layer 4, a plugging material 22, and an inner metal circuit layer 26. The surface of the substrate 1 has a first surface and a second surface opposite to each other, and the substrate has a through hole 12 that penetrates the substrate 1 from the first surface to the second surface. The first conductive metal layer 4 is formed on the hole wall of the through hole 12, and the first conductive metal layer 4 located in the through hole 12 has a pore 13, and the pore 13 penetrates the substrate 1 from the first surface to the second surface. The plugging material 22 is formed on the first conductive metal and is located in the pore 13, and the inner metal circuit layer 26 is formed on the surface of the first conductive metal layer 4 located in the through hole 12, on the surface of the plugging material 22 located in the pore 13, and on the surface of the substrate 1.

[0142] The beneficial effects of the substrate structure provided by the embodiment of the present invention are the same as the beneficial effects of the method for manufacturing the substrate structure described in the above technical solution, and will not be described in detail here.

[0143] As a possible implementation, see Figures 17 to 39 The above-mentioned substrate structure also includes an insulating layer 27 formed on the inner metal circuit layer 26, and a blind hole 28 is formed on the insulating layer 27, and the blind hole 28 is connected to the inner metal circuit layer 26 corresponding to the through hole 12. At least one outer metal circuit layer 29 is formed on the insulating layer 27 and in the blind hole 28, and a solder resist layer 30 and a solder ball 31 are formed on the outermost outer metal circuit layer 29. The description of the insulating layer 27, the blind hole 28, the inner metal circuit layer 26, the outer metal circuit layer 29, the solder resist layer 30 and the solder ball 31 can be referred to the first aspect and will not be repeated here.

[0144] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0145] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for manufacturing a substrate structure, characterized in that: include: providing a substrate; The surface of the substrate has a first surface and a second surface opposite to each other; A through hole is provided along a direction from the first surface to the second surface and passes through the substrate; A first conductive metal layer is formed on the substrate and on the hole wall of the through hole, wherein the first conductive metal layer located in the through hole has pores; the pores penetrate the substrate from the first surface to the second surface; forming a plugging material on the first conductive metal layer and in the pores; Removing part of the plugging material by plasma etching to retain the plugging material in the pore; The part of the plugging material is the plugging material located on the first conductive metal layer on the surface of the substrate; removing the first conductive metal layer on the surface of the substrate to retain the first conductive metal layer in the through hole; An inner metal circuit layer is formed on a surface of the first conductive metal layer in the through hole, a surface of the plugging material in the pore, and a surface of the substrate.

2. The method for manufacturing a substrate structure according to claim 1, characterized in that: The plasma etching method includes inductively coupled plasma etching; And / or, when removing part of the plugging material by plasma etching, single-side etching is adopted.

3. The method for manufacturing a substrate structure according to claim 1, characterized in that: Before removing part of the plugging material by plasma etching to retain the plugging material in the pore, the method for manufacturing the substrate structure further includes: removing part of the plugging material by chemical mechanical polishing to obtain a pre-treated substrate; After obtaining the pre-treated substrate, removing part of the plugging material by plasma etching to retain the plugging material in the pores includes: removing the plugging material on the pre-treated substrate by plasma etching to retain the plugging material in the pores.

4. The method for manufacturing a substrate structure according to claim 1, characterized in that: The plugging material is a dry film type plugging resin material; wherein, Forming the plugging material on the first conductive metal layer and in the pores includes: forming the plugging material on the first conductive metal layer and in the pores by vacuum pressing; Removing part of the plugging material by plasma etching to retain the plugging material in the pores comprises: when the dry film plugging resin material is cured to an incompletely cured state, removing part of the dry film plugging resin material by plasma etching to retain the dry film plugging resin material in the pores; wherein the incompletely cured state is 60% to 80% of the dry film plugging resin material being cured; After removing part of the plugging material by plasma etching to retain the plugging material in the pores, the method for manufacturing the substrate structure further includes: completely curing the dry film type plugging resin material in the pores.

5. The method for manufacturing a substrate structure according to any one of claims 1 to 4, characterized in that: Along a direction perpendicular to the first surface to the second surface, projections of the plugging material in the pores on the substrate are all located within the substrate.

6. The method for manufacturing a substrate structure according to claim 5, characterized in that: The minimum height difference between the first surface of the substrate and the plugging material in the pore is greater than or equal to 0 micrometers and less than or equal to 20 micrometers; and / or the minimum height difference between the second surface of the substrate and the plugging material in the pore is greater than or equal to 0 micrometers and less than or equal to 20 micrometers; The direction of the height difference is consistent with the direction from the first surface to the second surface.

7. The method for manufacturing a substrate structure according to claim 1, characterized in that: The first conductive metal layer in the through hole is recessed relative to the first surface and the second surface of the substrate; or the first conductive metal layer in the through hole is recessed relative to both end surfaces of the plugging material in the pore.

8. The method for manufacturing a substrate structure according to claim 1, characterized in that: Forming an inner metal circuit layer on the surface of the first conductive metal layer in the through hole, on the surface of the plugging material in the pore, and on the surface of the substrate comprises: forming a second conductive metal layer on the surface of the first conductive metal layer in the through hole, on the surface of the plugging material in the pore, and on the surface of the substrate; the thickness of the second conductive metal layer is greater than or equal to 0.2 mm and less than or equal to 1 mm; forming a pattern mask on a surface of the second conductive metal layer, wherein the pattern mask at least exposes the second conductive metal layer corresponding to the through hole; forming a third conductive metal layer on the area of ​​the second conductive metal layer exposed outside the pattern mask; removing the pattern mask and the second conductive metal layer exposed outside the third conductive metal layer; The third conductive metal layer and the second conductive metal layer corresponding to the third conductive metal layer form the inner metal circuit layer.

9. The method for manufacturing a substrate structure according to claim 1 or 8, characterized in that: After forming the inner metal circuit layer on the surface of the first conductive metal layer in the through hole, on the surface of the plugging material in the pore, and on the surface of the substrate, the method for manufacturing the substrate structure further includes: forming an insulating layer on the inner metal circuit layer; A blind hole is formed on the insulating layer, wherein the blind hole is connected to the third conductive metal layer corresponding to the through hole; forming at least one outer metal circuit layer on the insulating layer and in the blind hole; A solder resist layer and solder balls are formed on the outermost outer metal circuit layer.

10. A substrate structure, characterized in that: The substrate structure is manufactured by the manufacturing method of any one of claims 1 to 9; the substrate structure comprises: A substrate, wherein a surface of the substrate has a first surface and a second surface opposite to each other, and the substrate has a through hole penetrating the substrate in a direction from the first surface to the second surface; A first conductive metal layer is formed on the hole wall of the through hole; the first conductive metal layer located in the through hole has pores; the pores penetrate the substrate from the first surface to the second surface; A plugging material is formed on the first conductive metal and is located in the pore; An inner metal circuit layer is formed on a surface of the first conductive metal layer in the through hole, a surface of the plugging material in the pore, and a surface of the substrate.

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