Thin film transistor, light emitting substrate, and light emitting device

Abstract

The embodiment of the invention provides a thin film transistor, a light-emitting substrate and a light-emitting device. The thin film transistor comprises a transistor body located on one side of the substrate; the organic material layer is located on the side, away from the substrate, of the transistor body; the isolation layer is located on the side, away from the substrate, of the organic material layer, the orthographic projection of the isolation layer on the substrate and the orthographic projection of an active layer channel region of the transistor body on the substrate have an overlapping region, and the material of the isolation layer comprises metal; the first insulating layer is located on the side, away from the substrate, of the isolating layer, and the material of the first insulating layer comprises silicon nitride. According to the technical scheme, the isolation layer can prevent hydrogen atoms or hydrogen ions from diffusing to the active layer channel region below the isolation layer, the negative bias of the thin film transistor is improved, and the performance of the thin film transistor and the display quality of a display product are improved.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a thin film transistor, a light-emitting substrate and a light-emitting device. Background Art

[0002] In the field of semiconductor display, with the development of technology, products are constantly pursuing faster refresh rates, higher resolutions and better energy efficiency levels. Traditional thin-film transistors have gradually failed to meet the demand. Oxide semiconductor materials, such as indium gallium zinc oxide (IGZO), have the characteristics of high stability, high mobility and low power consumption, which can achieve higher quality display quality and longer service life.

[0003] Thin-film transistors made of oxide semiconductor materials have a negative characteristic curve, which affects the uniformity of the display image and reduces the display effect. Summary of the invention

[0004] The embodiments of the present disclosure provide a thin film transistor, a light-emitting substrate, and a light-emitting device to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a thin film transistor, including:

[0006] a transistor body, located on one side of the substrate;

[0007] An organic material layer, located on a side of the transistor body facing away from the substrate;

[0008] An isolation layer is located on a side of the organic material layer facing away from the substrate, an orthographic projection of the isolation layer on the substrate and an orthographic projection of an active layer channel region of the transistor body on the substrate have an overlapping area, and the isolation layer is made of metal;

[0009] The first insulating layer is located on the side of the isolation layer away from the substrate, and the material of the first insulating layer includes silicon nitride.

[0010] In some embodiments, the isolation layer includes a main layer, and a material of the main layer includes at least one of aluminum and copper.

[0011] In some embodiments, the bulk layer has a thickness ranging from 500 angstroms to 1000 angstroms.

[0012] In some embodiments, the main layer includes a main sublayer and protective sublayers located on both sides of the main sublayer. The material of the main sublayer includes at least one of aluminum and copper, and the material of the protective sublayer includes molybdenum.

[0013] In some embodiments,

[0014] The material of the main sublayer includes aluminum, and the material of the protective sublayer includes molybdenum; or,

[0015] The material of the main sublayer includes copper, and the material of the protection sublayer includes molybdenum and niobium.

[0016] In some embodiments, the thickness of the bulk sub-layer ranges from 300 angstroms to 700 angstroms; and / or the thickness of the protective sub-layer ranges from 100 angstroms to 200 angstroms.

[0017] In some embodiments, the isolation layer further includes an auxiliary layer stacked with the main layer, the auxiliary layer is located between the organic material layer and the main layer, and the material of the auxiliary layer includes metal oxide.

[0018] In some embodiments, the material of the auxiliary layer includes at least one of indium tin oxide and indium zinc oxide.

[0019] In some embodiments, the auxiliary layer has a thickness ranging from 500 angstroms to 1000 angstroms.

[0020] In some embodiments, an orthographic projection of an active layer of the transistor body on the substrate is located within an orthographic projection of the isolation layer on the substrate.

[0021] In some embodiments, the material of the active layer includes oxide semiconductor.

[0022] In some embodiments, the transistor body also includes a gate, a first pole and a second pole, the thin film transistor also includes a second insulating layer and a third insulating layer, the active layer, the second insulating layer, the gate and the third insulating layer are stacked in sequence on one side of the substrate, the first pole and the second pole are located on the side of the third insulating layer away from the substrate, the first pole and the second pole are both connected to the active layer, and the material of the third insulating layer includes silicon oxide.

[0023] As a second aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a light-emitting substrate, including the thin film transistor of the present disclosure, the light-emitting substrate includes a light-emitting area and / or a border area located on one side of the light-emitting area, and the thin film transistor is located in the light-emitting area and / or the border area.

[0024] In some embodiments, the light-emitting substrate also includes a driving electrode located on the side of the first insulating layer facing away from the substrate, the organic material layer is provided with a first via, the isolation layer is provided with a second via, the orthographic projection of the first via on the substrate at least partially intersects with the orthographic projection of the second pole of the transistor body on the substrate, the orthographic projection of the first via on the substrate is located within the orthographic projection of the second via on the substrate, the first insulating layer is provided with a third via, and the driving electrode is connected to the second pole of the transistor body through the third via.

[0025] As a third aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a light-emitting device, including any thin film transistor of the present disclosure, or including the light-emitting substrate of the present disclosure.

[0026] In the technical solution of the embodiment of the present disclosure, the material of the first insulating layer includes silicon nitride, and the characteristics of the silicon nitride material enable the first insulating layer to isolate water vapor, prevent water vapor from invading and corroding the first and second electrodes of the transistor body, and avoid blackening around the thin film transistor device. An isolation layer is provided between the organic material layer and the first insulating layer in the thin film transistor, and the material of the isolation layer includes metal, so that the isolation layer can block the hydrogen atoms or hydrogen ions in the first insulating layer from diffusing to the bottom of the isolation layer; by setting the positive projection of the isolation layer on the substrate and the positive projection of the active layer channel region of the transistor body on the substrate to have an overlapping area, the isolation layer can block the hydrogen atoms or hydrogen ions from diffusing to the active layer channel region below the isolation layer, and prevent the hydrogen atoms or hydrogen ions from entering the active layer channel region below the isolation layer, thereby reducing the number of hydrogen atoms or hydrogen ions entering the active layer channel region, improving the negative bias of the thin film transistor, improving the performance of the thin film transistor, and improving the display quality of the display product.

[0027] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0029] Figure 1 A schematic plan view of the location of a thin film transistor in a light-emitting substrate;

[0030] Figure 2 for Figure 1 AA section diagram in;

[0031] Figure 3 To adopt Figure 2 A schematic diagram of VI transfer characteristic curves of multiple thin film transistors of the structure shown;

[0032] Figure 4 It is a partial plan view of a light-emitting substrate according to an embodiment of the present disclosure;

[0033] Figure 5 for Figure 4 A schematic diagram of the AA section in one embodiment;

[0034] Figure 6 for Figure 4 A schematic diagram of an AA cross section in another embodiment;

[0035] Figure 7 It is a structural diagram of the main layer;

[0036] Figure 8 A schematic diagram showing the indentation of the auxiliary layer during the etching of the isolation layer;

[0037] Fig. 9 Schematic diagram of VI transfer characteristic curves of multiple thin film transistors according to an embodiment of the present disclosure;

[0038] Fig.10 Schematic diagram of a cross-section of a light-emitting substrate in one embodiment of the present disclosure.

[0039] Description of reference numerals:

[0040] 10. Substrate; 111. Shading layer; 12. Fourth insulating layer; 13. Active layer; 14. Second insulating layer; 151. Gate; 152. Gate line; 16. Third insulating layer; 171. First electrode; 172. Second electrode; 18. Organic material layer; 19. First insulating layer; 20. Isolation layer; 21. Main layer; 22. Auxiliary layer; 30. Driving electrode. DETAILED DESCRIPTION

[0041] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure, and different embodiments may be combined arbitrarily without conflict. Therefore, the drawings and descriptions are considered to be illustrative in nature and not restrictive.

[0042] Figure 1 is a plan view schematically showing the location of a thin film transistor in a light-emitting substrate. Figure 2 for Figure 1 AA cross-section diagram in Figure 2. Figure 2As shown, the thin film transistor is arranged on one side of the substrate 10, and the substrate further includes an organic material layer 18 and a first insulating layer 19. The organic material layer 18 is located on the side of the thin film transistor away from the substrate 10, and the first insulating layer 19 is located on the side of the organic material layer 18 away from the substrate 10. The substrate further includes a first metal layer and a second metal layer, the first metal layer includes a gate 151 of the thin film transistor, and the second metal layer includes a first electrode 171 and a second electrode 172 of the thin film transistor. One of the first electrode 171 and the second electrode 172 can be a source electrode, and the other can be a drain electrode. The material of the first insulating layer 19 includes silicon nitride (SiN), and silicon nitride can isolate water vapor. Therefore, the first insulating layer 19 can isolate water vapor and prevent water vapor from invading and corroding the second metal layer. However, the material of the first insulating layer 19 includes silicon nitride, and the silicon nitride material contains hydrogen elements. Therefore, in the subsequent process technology, silicon nitride will produce hydrogen atoms or hydrogen ions, thereby causing the first insulating layer 19 to produce hydrogen atoms or hydrogen ions. The hydrogen atoms or hydrogen ions in the first insulating layer 19 may diffuse into the active layer channel region of the thin film transistor, causing the VI transfer characteristic of the thin film transistor device to be negatively biased.

[0043] Figure 3 To adopt Figure 2 Schematic diagram of VI transfer characteristic curves of multiple thin film transistors with the structure shown. Figure 3 The horizontal axis is voltage and the vertical axis is current. Figure 3 FIG. 4 shows VI characteristic curves of multiple thin film transistors detected on a display substrate. Figure 3 It can be seen that with the use of thin film transistors, the VI transfer characteristic curve of the thin film transistor becomes negatively biased and has poor uniformity, which causes the gate voltage of the thin film transistor to have poor ability to control the current in the channel region of the active layer.

[0044] Figure 4 FIG. 1 is a partial plan view of a light-emitting substrate according to an embodiment of the present disclosure. Figure 5 for Figure 4 AA cross-sectional schematic diagram of an embodiment, Figure 6 for Figure 4 AA cross-sectional schematic diagram in another embodiment. Figure 4-Figure 6 As shown, the embodiment of the present disclosure provides a light-emitting substrate, the light-emitting substrate includes a thin film transistor, and the thin film transistor includes a transistor body, an organic material layer 18, an isolation layer 20 and a first insulating layer 19. Figure 5 and Figure 6 As shown, the transistor body is located on one side of the substrate 10, and the transistor body includes an active layer 13, a gate 151, a first electrode 171 and a second electrode 172. One of the first electrode 171 and the second electrode 172 may be a source electrode, and the other may be a drain electrode.

[0045] The organic material layer 18 is located on the side of the transistor body facing away from the substrate 10. The isolation layer 20 is located on the side of the organic material layer 18 facing away from the substrate 10. There is an overlapping area between the orthographic projection of the isolation layer 20 on the substrate 10 and the orthographic projection of the active layer channel region of the transistor body on the substrate 10. The material of the isolation layer 20 includes metal. The first insulating layer 19 is located on the side of the isolation layer 20 facing away from the substrate 10, and the material of the first insulating layer 19 includes silicon nitride. The isolation layer 20 is used to block hydrogen atoms or hydrogen ions in the first insulating layer 19 from entering the active layer channel region of the transistor body. In other words, the isolation layer 20 can block hydrogen atoms or hydrogen ions in the first insulating layer 19, and prevent hydrogen atoms or hydrogen ions from penetrating the organic material layer 18 into the active layer channel region of the transistor body.

[0046] In the technical solution of the embodiment of the present disclosure, the material of the first insulating layer 19 includes silicon nitride. The characteristics of the silicon nitride material enable the first insulating layer 19 to isolate water vapor, prevent water vapor from invading and corroding the first electrode 171 and the second electrode 172 of the transistor body, and avoid blackening around the thin film transistor device. An isolation layer 20 is arranged between the organic material layer 18 and the first insulating layer 19 in the thin film transistor. The material of the isolation layer 20 includes metal, so that the isolation layer 20 can block the hydrogen atoms or hydrogen ions in the first insulating layer 19 from diffusing to the bottom of the isolation layer 20; by setting the positive projection of the isolation layer 20 on the substrate 10 and the positive projection of the active layer channel region of the transistor body on the substrate 10 to have an overlapping area, the isolation layer 20 can block the hydrogen atoms or hydrogen ions from diffusing to the active layer channel region below the isolation layer 20, and prevent the hydrogen atoms or hydrogen ions from entering the active layer channel region below the isolation layer 20, thereby reducing the number of hydrogen atoms or hydrogen ions entering the active layer channel region, improving the negative bias of the thin film transistor, improving the performance of the thin film transistor, and improving the display quality of the display product.

[0047] In one embodiment, the orthographic projection of the active layer channel region of the transistor body on the substrate 10 is located within the orthographic projection range of the isolation layer 20 on the substrate 10. In this way, the isolation layer 20 can isolate the entire active layer channel region from the first insulating layer 19, prevent hydrogen atoms or hydrogen ions in the first insulating layer 19 from entering the active layer channel region, further reduce the number of hydrogen atoms or hydrogen ions entering the active layer 13, and improve the negative bias of the thin film transistor. Exemplarily, the orthographic projection of the active layer 13 of the transistor body on the substrate 10 is located within the orthographic projection range of the isolation layer 20 on the substrate 10, so that the isolation layer 20 can prevent hydrogen atoms or hydrogen ions in the first insulating layer 19 from entering the active layer 13, and prevent the thin film transistor characteristics from being affected.

[0048] Exemplarily, in order to realize the blocking and isolating effect of the isolation layer 20 on hydrogen atoms or hydrogen ions, the isolation layer 20 includes a main layer 21, and the material of the main layer 21 includes at least one of aluminum and copper. Such a main layer 21 can play a role in blocking and isolating hydrogen atoms or hydrogen ions, preventing hydrogen atoms or hydrogen ions from diffusing toward the lower film layer of the isolation layer 20, and further preventing hydrogen atoms or hydrogen ions from entering the channel region of the active layer.

[0049] The material of the main layer 21 is not limited to aluminum and copper. The material of the main layer 21 may also include other metals, as long as the main layer 21 can play a role in blocking and isolating hydrogen atoms or hydrogen ions, which will not be listed here one by one.

[0050] In one embodiment, the thickness of the main layer 21 may range from 500 angstroms to 1000 angstroms (including the end value). The main layer 21 of such thickness can improve the uniformity of film formation. If the thickness of the main layer 21 is less than 500 angstroms, the film formation time will be too short, resulting in poor film formation uniformity. Setting the thickness of the main layer 21 to be greater than 500 angstroms can ensure film formation uniformity and improve film formation quality.

[0051] Figure 7 This is a schematic diagram of the structure of the main layer. Figure 7 As shown, the main body layer 21 may include a main body sublayer 211 and a protective sublayer 212 located on both sides of the main body sublayer 211. Exemplarily, the material of the main body sublayer 211 may include at least one of aluminum and copper, and the material of the protective sublayer 212 may include molybdenum (Mo). Molybdenum film has a good anti-oxidation effect. The use of the protective sublayer 212 containing molybdenum can play a good protective role on the main body sublayer 211 and prevent the oxidation of the main body sublayer 211. It should be noted that the material of the protective sublayer 212 is not limited to molybdenum, and the protective sublayer 212 can also use other materials with anti-oxidation effects, such as metal alloys.

[0052] In one embodiment, the material of the main sub-layer 211 includes aluminum, and the material of the protection sub-layer 212 includes molybdenum.

[0053] In another embodiment, the material of the main sub-layer 211 includes copper, and the material of the protective sub-layer 212 includes molybdenum and niobium (Nb). For example, the material of the protective sub-layer 212 can be molybdenum-niobium alloy (MoNb).

[0054] It should be noted that the material of the protective sublayer 212 can be determined according to the material of the main body sublayer 211, as long as the protective sublayer 212 can protect the main body sublayer 211 from being oxidized. For example, when the material of the main body sublayer 211 is aluminum, the material of the protective sublayer 212 can be molybdenum. The protective sublayer 212 made of molybdenum can protect the main body sublayer 211 made of aluminum to prevent the main body sublayer 211 from being oxidized.

[0055] The thickness of the main sublayer 211 may range from 300 angstroms to 700 angstroms, for example, the thickness of the main sublayer 211 may be 300 angstroms, 500 angstroms, or 700 angstroms. The thickness of the protective sublayer 212 may range from 100 angstroms to 200 angstroms, for example, the thickness of the protective sublayer 212 may be 100 angstroms, 150 angstroms, or 200 angstroms.

[0056] The main layer 21 is located on the organic material layer 18. In order to ensure the stability of the isolation layer 20, Figure 6 As shown, the isolation layer 20 may further include an auxiliary layer 22 stacked with the main layer 21 , the auxiliary layer 22 is located between the organic material layer 18 and the main layer 21 , and the material of the auxiliary layer 22 includes metal oxide.

[0057] The isolation layer 20 is located on the organic material layer 18. When the isolation layer 20 only includes the main layer 21, it is necessary to form the main layer 21 on the surface of the organic material layer 18. However, the material of the main layer 21 is metal. When the metal material is deposited on the surface of the organic material layer 18, poor deposition is likely to occur. In other words, the characteristics of the organic material layer 18 make it difficult to directly deposit the main layer 21 of metal material on the surface of the organic material layer 18. The material of the auxiliary layer 22 includes metal oxide. It is relatively easier to deposit metal oxide on the surface of the organic material layer 18 in terms of process technology, and metal material can be easily deposited on the surface of the metal oxide. Therefore, by setting the isolation layer 20 to also include the auxiliary layer 22, and the auxiliary layer 22 is located between the organic material layer 18 and the main layer 21, it is easier to form the auxiliary layer 22 and the main layer 21 stacked on the organic material layer 18 in terms of process technology, which can reduce the difficulty of forming the isolation layer 20 on the organic material layer 18 and ensure the mass production stability of the isolation layer 20.

[0058] In the process of forming the isolation layer 20, a deposition process such as a sputtering process can be used to deposit an auxiliary thin film on the surface of the organic material layer 18, and the material of the auxiliary thin film includes a metal oxide; a deposition process such as a sputtering process is used to deposit a main thin film on the surface of the auxiliary thin film, and the main layer 21 includes a first protective sub-film, a main sub-film, and a second protective sub-film that are stacked; an etching process is used to etch the main thin film and the auxiliary thin film to form the isolation layer 20. In the etching process, the main thin film is first etched to form the main layer 21, and then the auxiliary thin film is etched to form the auxiliary layer 22.

[0059] Exemplarily, the thickness of the main layer 21 ranges from 500 angstroms to 1000 angstroms (including the end values). It should be noted that the material of the main film includes metal, and the material of the auxiliary film includes metal oxide. The etching rates of metal and metal oxide are inconsistent. When the thickness of the main film is greater than 1000 angstroms, the etching process is prone to indentation in the auxiliary layer 22, such as Figure 8 As shown, Figure 8 Schematic diagram of the indentation of the auxiliary layer during the etching of the isolation layer. Figure 8 In the process of etching to form the isolation layer 20, the edge of the auxiliary layer 22 is undercut, so that the edge of the main layer 21 has no auxiliary layer 22, resulting in a defective main layer 21. Setting the thickness of the main layer 21 to be less than or equal to 1000 angstroms can avoid the etching process from undercutting the edge of the auxiliary layer 22, ensuring the performance of the main layer 21, and further ensuring the blocking and isolating effect of the isolation layer 20 on hydrogen atoms and hydrogen ion pairs.

[0060] The thickness of the auxiliary layer 22 may range from 500 angstroms to 1000 angstroms (including end values). When uniformity permits, the thickness of the auxiliary layer 22 is as small as possible. In a specific implementation, the thickness of the auxiliary layer 22 may be set according to process requirements.

[0061] In addition, by providing the isolation layer 20 including the stacked auxiliary layer 22 and the main layer 21, the uniformity of the thickness of the isolation layer 20 can be improved, and the non-uniformity of the thickness of the isolation layer 20 is limited to 10% to 15%, thereby ensuring the blocking and isolating effect of the isolation layer 20 on hydrogen atoms and hydrogen ions. The method for measuring the uniformity of the film thickness can adopt conventional techniques in the art, which will not be described in detail here.

[0062] In one embodiment, the material of the auxiliary layer 22 may include at least one of indium tin oxide (ITO) and indium zinc oxide (IZO). The material of the auxiliary layer 22 is not limited to ITO and IZO. The auxiliary layer 22 may also be made of other metal oxides as long as the auxiliary film can be formed by a deposition process. For example, the material of the auxiliary layer 22 may also include indium gallium zinc oxide, etc.

[0063] The thickness of the auxiliary layer 22 ranges from 500 angstroms to 1000 angstroms. If the thickness of the auxiliary layer 22 is less than 500 angstroms, it is not easy to form an auxiliary thin film on the surface of the organic material layer 18, which reduces the uniformity of film formation. If the thickness of the auxiliary layer 22 is greater than 1000 angstroms, it will cause unnecessary waste of materials. Setting the thickness range of the auxiliary layer 22 to 500 angstroms to 1000 angstroms is conducive to film formation on the surface of the organic material layer 18, reduces the difficulty of the film formation process of the auxiliary layer 22, improves the uniformity of film formation of the auxiliary layer 22, and further improves the uniformity of film formation of the isolation layer 20.

[0064] like Figure 5 and Figure 6As shown, the material of the active layer 13 in the transistor body includes an oxide semiconductor, such as indium gallium zinc oxide (IGZO), etc. Oxide semiconductor materials have the characteristics of high stability, high mobility and low power consumption, so that the thin film transistor can have the characteristics of high stability, high mobility and low power consumption, and achieve higher quality display quality and longer service life.

[0065] like Figure 5 and Figure 6 As shown, the transistor body further includes a gate 151, a first electrode 171, and a second electrode 172. The thin film transistor further includes a second insulating layer 14 and a third insulating layer 16, and the active layer 13, the second insulating layer 14, the gate 151, and the third insulating layer 16 are sequentially stacked on one side of the substrate 10. For example, the second insulating layer 14 is located on the side of the active layer 13 away from the substrate 10, the gate 151 is located on the side of the second insulating layer 14 away from the active layer 13, and the third insulating layer 16 is located on the side of the gate 151 away from the active layer 13.

[0066] The first pole 171 and the second pole 172 are located on the side of the third insulating layer 16 away from the substrate 10, and the first pole 171 and the second pole 172 are both connected to the active layer 13, and the material of the third insulating layer 16 includes silicon oxide. It can be understood that the active layer 13 includes a channel region and a first conductive region and a second conductive region located on both sides of the channel region, and the first pole 171 and the second pole 172 are connected to the first conductive region and the second conductive region respectively.

[0067] Exemplarily, the material of the third insulating layer 16 may also include silicon nitride. For example, the third insulating layer 16 may be a silicon oxide film; or the third insulating layer 16 may be a stacked silicon oxide film and a silicon nitride film.

[0068] like Figure 5 and Figure 6 As shown, the thin film transistor may further include a light shielding layer 111 and a fourth insulating layer 12, the fourth insulating layer 12 may be located between the substrate 10 and the active layer 13, and the light shielding layer 111 may be located between the substrate 10 and the fourth insulating layer 12. The orthographic projection of the active layer 13 or the active layer channel region on the substrate 10 is located within the orthographic projection of the light shielding layer 111 on the substrate 10. The material of the fourth insulating layer 12 may include silicon oxide. The light shielding layer 111 may block the light source on the substrate 10 side from irradiating the active layer channel region, reduce the influence of the external light source on the characteristics of the thin film transistor, and improve the characteristics of the thin film transistor.

[0069] Exemplarily, the material of the fourth insulating layer 12 may also include silicon nitride. For example, the fourth insulating layer 12 may be a silicon oxide film; or the fourth insulating layer 12 may be a stacked silicon oxide film and a silicon nitride film.

[0070] It should be noted that Figure 5 and Figure 6 In the embodiment, the transistor body is a top-gate structure, and in other embodiments, the transistor body can be a bottom-gate structure.

[0071] Fig. 9 Schematic diagram of VI transfer characteristic curves of multiple thin film transistors according to the embodiment of the present disclosure, wherein the horizontal axis is voltage and the vertical axis is current. Fig. 9 FIG. 4 shows VI characteristic curves of thin film transistors of multiple embodiments of the present disclosure detected on a display substrate. Fig. 9 It can be seen that with the use of thin film transistors, Figure 3 Compared with the related technologies, by adopting the technical solution disclosed in the present invention, the VI transfer characteristic curve of the thin film transistor basically does not produce a negative bias, and the uniformity of multiple thin film transistors is good, which improves the stability of the thin film transistor characteristics and is beneficial to improving the display quality of display products.

[0072] In an exemplary embodiment, the gate 151, the source electrode, and the drain electrode may be made of metal materials, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or alloy materials of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and may be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti, etc. The active layer 13 may be made of various materials such as amorphous indium gallium zinc oxide (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si), sexithiophene, polythiophene, etc., that is, the present disclosure is applicable to transistors manufactured based on oxide technology, silicon technology, and organic technology.

[0073] The embodiment of the present disclosure further provides a light-emitting substrate. The light-emitting substrate includes the thin film transistor in the embodiment of the present disclosure. The light-emitting substrate includes a light-emitting area, and the thin film transistor is located in the light-emitting area. Exemplarily, the light-emitting substrate can be a display substrate, and the light-emitting substrate can also include a frame area located on one side of the light-emitting area, and the thin film transistor can be located in the frame area.

[0074] Exemplarily, the light-emitting substrate may further include a gate line 152 and a data line 173. The gate line 152 may be disposed in the same layer as the gate electrode 151 of the thin film transistor, and the data line 173 may be disposed in the same layer as the source and drain of the thin film transistor. The thin film transistor may be located in the light-emitting region, and the thin film transistor may be connected to the gate line 152 and the data line 173.

[0075] The light-emitting substrate may include a first frame area located on the left or right side of the light-emitting area, and a shift register may be arranged in the first frame area. The shift register may include a thin film transistor in the embodiment of the present disclosure.

[0076] The light-emitting substrate may include a second frame area located at the lower side of the light-emitting area. A multi-way switch module (MUX module) may be provided in the second frame area. The multi-way switch module may include the thin film transistor in the embodiment of the present disclosure.

[0077] Fig.10 FIG. 2 is a cross-sectional schematic diagram of a light-emitting substrate in an embodiment of the present disclosure. Fig.10 As shown, the light-emitting substrate can be a display substrate. In one embodiment, in order to prevent hydrogen atoms or hydrogen ions in the first insulating layer 19 from entering the active layer 13 from the periphery of the isolation layer 20, the area of ​​the isolation layer 20 can be made large enough. For example, the orthographic projection of the transistor body on the substrate 10 is located within the orthographic projection of the isolation layer 20 on the substrate 10. In this way, the isolation layer 20 will block the second pole 172 of the transistor body. The light-emitting substrate also includes a driving electrode 30, which is located on the side of the first insulating layer 19 away from the substrate 10. In order to achieve the connection between the driving electrode 30 and the second pole 172, the organic material layer 18 is provided with a first via K1, and the orthographic projection of the first via K1 on the substrate 10 is at least partially intersected with the orthographic projection of the second pole 172 of the transistor body on the substrate 10. Thus, at least part of the surface of the second pole 172 of the transistor body can be exposed through the first via K1. The isolation layer 20 is provided with a second via K2, and the orthographic projection of the first via K1 on the substrate 10 is located within the orthographic projection of the second via K2 on the substrate 10. The first insulating layer 19 is provided with a third via hole K3, and the third via hole K3 exposes at least a portion of the surface of the second electrode 172 of the transistor body. The driving electrode 30 is connected to the second electrode 172 of the transistor body through the third via hole K3. The first electrode 171 of the transistor body can be connected to the data line 173, and one of the first electrode 171 and the second electrode 172 can be a source electrode, and the other can be a drain electrode.

[0078] Exemplarily, the orthographic projection of the third via hole K3 on the substrate 10 may be located within the orthographic projection of the first via hole K1 on the substrate 10 .

[0079] In one embodiment, the light-emitting substrate may further include a connecting wire, which may be disposed in the same layer as the second electrode 172, and connected to the second electrode 172. The driving electrode 30 is connected to the connecting wire through the third via K3, thereby realizing the connection between the driving electrode 30 and the second electrode 172. In such a structure, the isolation layer 20 does not need to be provided with a second via K2.

[0080] For example, the display substrate may be applied to a liquid crystal display panel, and the driving electrode 30 may be a pixel electrode; the display substrate may be applied to an organic light emitting diode (OLED) display panel, and the driving electrode 30 may be an anode of an OLED device.

[0081] The thin film transistor of the embodiment of the present disclosure can also be applied to other modules or products. The thin film transistor of the embodiment of the present disclosure can provide stability of thin film transistor characteristics, which is beneficial to improving product quality and extending product life.

[0082] The embodiments of the present disclosure further provide a light-emitting device, which includes the thin film transistor of the embodiments of the present disclosure, or the light-emitting device includes the light-emitting substrate of the embodiments of the present disclosure.

[0083] The light-emitting substrate in the embodiment of the present disclosure can be installed in a light-emitting device as a display substrate, so that the light-emitting device can be used as a display device. The light-emitting substrate in the embodiment of the present disclosure can also be installed in a light-emitting device or a display device as a light source.

[0084] The display device can be: electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, wearable display device, or any other product or component with display function.

[0085] The light-emitting substrate in the embodiment of the present disclosure can also be used as a light source in lighting products.

[0086] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0087] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0088] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0089] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0090] The disclosure above provides many different embodiments or examples to implement different structures of the present disclosure. In order to simplify the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0091] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or replacements within the technical scope disclosed in the present disclosure. Different parts in different embodiments can be combined with each other without conflict, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A thin film transistor, characterized in that: include: a transistor body, located on one side of the substrate; An organic material layer, located on a side of the transistor body facing away from the substrate; an isolation layer, located on a side of the organic material layer away from the substrate, an orthographic projection of the isolation layer on the substrate and an orthographic projection of an active layer channel region of the transistor body on the substrate having an overlapping region, and the isolation layer is made of metal; The first insulating layer is located on a side of the isolation layer away from the substrate, and the material of the first insulating layer includes silicon nitride.

2. The thin film transistor according to claim 1, characterized in that: The isolation layer includes a main body layer, and the material of the main body layer includes at least one of aluminum and copper.

3. The thin film transistor according to claim 2, characterized in that: The thickness of the main layer ranges from 500 angstroms to 1000 angstroms.

4. The thin film transistor according to claim 2, characterized in that: The main body layer includes a main body sublayer and protective sublayers located on both sides of the main body sublayer. The material of the main body sublayer includes at least one of aluminum and copper, and the material of the protective sublayer includes molybdenum.

5. The thin film transistor according to claim 4, characterized in that: The material of the main sub-layer includes aluminum, and the material of the protective sub-layer includes molybdenum; or The material of the main sub-layer includes copper, and the material of the protection sub-layer includes molybdenum and niobium.

6. The thin film transistor according to claim 4, characterized in that: The thickness of the main sublayer is in the range of 300 angstroms to 700 angstroms; and / or the thickness of the protective sublayer is in the range of 100 angstroms to 200 angstroms.

7. The thin film transistor according to claim 2, characterized in that: The isolation layer further includes an auxiliary layer stacked with the main layer, the auxiliary layer is located between the organic material layer and the main layer, and the material of the auxiliary layer includes metal oxide.

8. The thin film transistor according to claim 7, characterized in that: The material of the auxiliary layer includes at least one of indium tin oxide and indium zinc oxide.

9. The thin film transistor according to claim 7, characterized in that: The thickness of the auxiliary layer ranges from 500 angstroms to 1000 angstroms.

10. The thin film transistor according to any one of claims 1 to 9, characterized in that: The orthographic projection of the active layer of the transistor body on the substrate is located within the orthographic projection range of the isolation layer on the substrate.

11. The thin film transistor according to any one of claims 1 to 9, characterized in that: The material of the active layer includes oxide semiconductor.

12. The thin film transistor according to any one of claims 1 to 9, characterized in that: The transistor body also includes a gate, a first electrode and a second electrode. The thin film transistor also includes a second insulating layer and a third insulating layer. The active layer, the second insulating layer, the gate and the third insulating layer are stacked in sequence on one side of the substrate. The first electrode and the second electrode are located on a side of the third insulating layer away from the substrate. The first electrode and the second electrode are both connected to the active layer. The material of the third insulating layer includes silicon oxide.

13. A light-emitting substrate, characterized in that: A thin film transistor comprising any one of claims 1 to 12, wherein the light-emitting substrate comprises a light-emitting area and / or a frame area located on one side of the light-emitting area, and the thin film transistor is located in the light-emitting area and / or the frame area.

14. The light emitting substrate according to claim 13, characterized in that: The light-emitting substrate also includes a driving electrode located on the side of the first insulating layer facing away from the substrate, the organic material layer is provided with a first via hole, the isolation layer is provided with a second via hole, the orthographic projection of the first via hole on the substrate at least partially intersects with the orthographic projection of the second pole of the transistor body on the substrate, the orthographic projection of the first via hole on the substrate is located within the orthographic projection of the second via hole on the substrate, the first insulating layer is provided with a third via hole, and the driving electrode is connected to the second pole of the transistor body through the third via hole.

15. A light emitting device, characterized in that: A thin film transistor comprising any one of claims 1 to 13, or a light-emitting substrate comprising claim 14.

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