Method for preparing perovskite thin film
By using dual-temperature evaporation chamber technology in the preparation of perovskite films, the evaporation conditions of organic salts and lead halides are independently controlled, and the film thickness and uniformity control problems are solved, forming high-quality perovskite films and improving solar cells performance and stability.
Patent Information
- Application Number
- CN202411302383.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2024-12-27
AI Technical Summary
The existing perovskite film preparation methods have problems such as high requirements for precursor rheological characteristics, difficulty in controlling film thickness and uniformity, solvent recovery problems and high costs, and it is difficult to meet commercial needs.
Using dual-temperature evaporation chamber technology, the evaporation sources of organic salts and lead halide are set in different regions respectively, and the evaporation conditions are independently controlled to ensure that each material evaporates under the optimal conditions, reducing the coupling between the evaporation source temperature and the substrate temperature. , forming high-quality perovskite films.
Accurate control of the deposition rate and thickness of perovskite films, forming a more complete and uniform crystal structure, improving carrier transmission, reducing film defects, obtaining high-quality perovskite films, and improving the perovskite solar cell Photoelectric performance and stability.
Smart Images
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Abstract
Description
Technical Field
[0001] The present application relates to the technical field of solar cells, and in particular to a method for preparing a perovskite film. Background Art
[0002] Perovskite solar cells have attracted widespread attention due to their excellent photovoltaic performance and are considered to be a new thin-film photovoltaic technology with great commercial potential. However, existing perovskite film preparation methods, such as spin coating, blade coating, and slit coating, have some challenges. Specifically, these methods not only have high requirements on the rheological properties of the precursor solution, but also have difficulties in controlling the thickness and uniformity of the film layer. In addition, they also involve the problem of solvent recovery, rely on the use of organic solvents, and have relatively high costs. In view of these limitations, it is particularly urgent to develop a new perovskite film preparation technology to meet current commercialization needs. Summary of the invention
[0003] In view of the technical problems existing in the background technology, the present application provides a method for preparing a perovskite film, a solar cell, a power generation device and an electricity-using device, aiming to solve the problem of how to efficiently prepare high-quality perovskite films.
[0004] In order to achieve the above-mentioned object, the first aspect of the present application proposes a method for preparing a perovskite film, the method comprising:
[0005] Putting a first evaporation source into a first zone of an evaporation chamber, putting a second evaporation source into a second zone of the evaporation chamber, and putting a substrate into a third zone of the evaporation chamber, wherein the second zone is located at one side of the first zone, and the third zone is located at a side of the second zone away from the first zone, wherein the first evaporation source includes an organic salt, and the second evaporation source includes a lead halide;
[0006] The evaporation chamber is evacuated and a carrier gas is introduced, and the first area and the second area are heated respectively, so that the first evaporation source and the second evaporation source form a first gas phase and a second gas phase respectively, and the carrier gas carries the first gas phase and the second gas phase to the third area and deposits them on one side of the substrate to form a perovskite film. The front of the phone is equivalent to the skeleton material, so a thicker front layer of the phone needs to be deposited.
[0007] The present application includes at least the following beneficial effects: The present application sets two evaporation sources independently in two areas, which facilitates independent control of evaporation conditions to ensure that each evaporation material evaporates under optimal conditions, reduces the mutual dependence or coupling between the evaporation source temperature and the substrate temperature, and thus achieves precise control of parameters such as film deposition rate and thickness. In addition, the first evaporation source including lead halide is closer to the substrate than the second evaporation source including organic salt, so that more lead halide is deposited on the substrate, which helps to form a more complete and uniform perovskite crystal structure, improve carrier transport, reduce film defects, and obtain high-quality perovskite film.
[0008] In some embodiments, the heating temperature of the first zone is 100° C. to 600° C.;
[0009] And / or, the heating temperature of the second zone is 200°C to 800°C.
[0010] In some embodiments, the heating temperature of the first zone is 120°C to 250°C;
[0011] And / or, the heating temperature of the second zone is 300°C to 400°C.
[0012] In some embodiments, the distance between the first evaporation source and the second evaporation source is 20 cm to 70 cm;
[0013] and / or, the distance between the first evaporation source and the side of the substrate facing the first evaporation source is 50 cm to 90 cm;
[0014] And / or, the distance between the second evaporation source and the side of the substrate facing the second evaporation source is 10 cm to 30 cm.
[0015] In some embodiments, the distance between the first evaporation source and the second evaporation source is 40 cm to 60 cm;
[0016] And / or, the distance between the second evaporation source and the side of the substrate facing the second evaporation source is 10 cm to 20 cm.
[0017] In some embodiments, the evaporation rate of the first evaporation source is 10°C / s to 30°C / s;
[0018] And / or, the evaporation time of the first evaporation source is 20 min to 80 min;
[0019] and / or, the evaporation rate of the second evaporation source is 10°C / s to 30°C / s;
[0020] And / or, the evaporation time of the second evaporation source is 10 min to 50 min;
[0021] And / or, the chamber pressure after the evaporation chamber is evacuated is lower than 1×10 -3 Pa.
[0022] In some embodiments, the first evaporation source further comprises an inorganic salt, wherein the cation of the inorganic salt comprises one or more of cesium ions, copper ions, zinc ions, gallium ions, tin ions, and calcium ions;
[0023] and or, the cation of the organic salt comprises one or more of methylamine ion and formamidine ion;
[0024] And / or, the anions of the inorganic salt and the organic salt independently include one or more of iodide ion, bromide ion, chloride ion, fluoride ion and thiocyanate ion;
[0025] And / or, the substrate includes a charge transport layer, and the carrier gas carries the first gas phase and the second gas phase to the third region and deposits them on a side of the charge transport layer facing away from the substrate.
[0026] In some embodiments, the thickness of the perovskite film is 10 nm to 100 μm;
[0027] And / or, the band gap of the perovskite film is 0.9 eV to 3.0 eV.
[0028] In a second aspect of the present application, the present application proposes a solar cell, the solar cell comprising: a perovskite film, the perovskite film being obtained by the method for preparing a perovskite film described in the first aspect of the present application.
[0029] In some embodiments, the solar cell comprises a single junction perovskite solar cell or a tandem perovskite solar cell.
[0030] In some embodiments, the tandem perovskite solar cell includes a two-terminal tandem perovskite solar cell, a three-terminal tandem perovskite solar cell, or a four-terminal tandem perovskite solar cell.
[0031] In a third aspect of the present application, the present application proposes a power generation device, which includes: the solar cell described in the first aspect of the present application.
[0032] In a fourth aspect of the present application, the present application proposes an electrical device, which includes: the solar cell described in the first aspect of the present application.
[0033] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0034] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0035] Figure 1 A schematic diagram of a method for preparing a perovskite film according to an embodiment of the present application is shown;
[0036] Figure 2 A schematic diagram of the system structure for preparing a perovskite film according to an embodiment of the present application is shown.
[0037] Description of reference numerals:
[0038] 10: System for preparing perovskite film; 100: Evaporation chamber; 200: First heating device; 300: Second heating device; 400: Pressure regulating device. DETAILED DESCRIPTION
[0039] The following is a detailed description of the embodiments of the technical solution of the present application. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.
[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
[0041] "Scope" disclosed in the present application is limited in the form of lower limit and upper limit, and a given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of a special range. The scope limited in this way can be including end values, and can be arbitrarily combined, that is, any lower limit can be combined with any upper limit to form a scope. For example, if the scope of 60-120 and 80-110 is listed for a specific parameter, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range values 1 and 2 listed, and if the maximum range values 3,4 and 5 are listed, the following scope can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In the present application, unless otherwise specified, the numerical range "ab" represents the abbreviation of any real number combination between a and b, wherein a and b are real numbers, and the scope limited in this way can be including end values a and b. For example, the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations. In addition, when a parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.
[0042] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.
[0043] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.
[0044] If there is no special explanation, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.
[0045] In the prior art, a dual-temperature zone tubular furnace is usually used to prepare perovskite films. Specifically, the precursor powder is placed in the high temperature zone and the substrate is placed in the low temperature zone, so as to achieve the effect of depositing the perovskite film. However, due to the different saturated vapor pressures and melting points of organic salts and inorganic salts, specifically the low saturated vapor pressure of inorganic salts, the perovskite film deposited in the same chamber contains too much organic salt components, which in turn causes the band gap to be uncontrollable and high, and it is impossible to obtain a narrow band gap or a standard band gap.
[0046] In view of this, the present application sets two evaporation sources independently in two areas to facilitate independent control of evaporation conditions, so as to ensure that each material evaporates under optimal conditions, reduce the mutual dependence or coupling between the evaporation source temperature and the substrate temperature, thereby achieving precise control of film deposition rate and thickness and other characteristics, and obtaining a higher quality film. Furthermore, the first evaporation source including lead halide is closer to the substrate than the second evaporation source including organic salt, so that more inorganic salts are deposited on the substrate, which helps to form a more complete and uniform perovskite crystal structure, improve carrier transport, reduce film defects, and obtain a high-quality perovskite film.
[0047] Based on this, in the first aspect of the present application, a method for preparing a perovskite film is proposed, see Figure 1 The method includes: S100 placing a first evaporation source in a first zone, a second evaporation source in a second zone, and a substrate in a third zone; S200 evacuating, introducing a carrier gas, and heating to form a perovskite film. Each step will be described in detail below.
[0048] S100: Place the first evaporation source in the first zone, the second evaporation source in the second zone, and the substrate in the third zone
[0049] In this step, a first evaporation source is placed in a first zone of an evaporation chamber, a second evaporation source is placed in a second zone of the evaporation chamber, and a substrate is placed in a third zone of the evaporation chamber, wherein the second zone is located on one side of the first zone, and the third zone is located on a side of the second zone away from the first zone, wherein the first evaporation source includes an organic salt, and the second evaporation source includes lead halide.
[0050] The present application sets two evaporation sources independently in two areas, which facilitates independent control of evaporation conditions to ensure that each material evaporates under optimal conditions, reduces the mutual dependence or coupling between the evaporation source temperature and the substrate temperature, thereby achieving precise control of film deposition rate and thickness and other characteristics, and obtaining a higher quality film. Furthermore, the first evaporation source including lead halide is closer to the substrate than the second evaporation source including organic salt, so that the lead halide forms a relatively thick skeleton structure, which in turn helps to form a more complete and uniform perovskite crystal structure, improve carrier transport, reduce film defects, and obtain a high-quality perovskite film.
[0051] In this article, the terms "first zone", "second zone" and "third zone" are used to divide the reaction space of the evaporation chamber based on the gas flow path. After the gas enters the evaporation chamber or is generated in the evaporation chamber, it passes through the first zone, the second zone and the third zone in sequence. In the above three areas, each area has at least one side with an opening, which can be connected to the external area, thereby facilitating the discharge of the gas phase generated by evaporation inside the area, which is carried by the carrier gas and deposited on the substrate. Exemplarily, the third area is an open area, which facilitates the deposition of the gas phase formed by the first evaporation source and the second evaporation source on the substrate. The "open area" can be the top of the area and the side facing the first evaporation source and the second evaporation source without shielding.
[0052] In the present application, the term "substrate" refers to the material to be formed into a perovskite film, which may include a stacked substrate and a functional layer, the functional layer may include a charge transfer layer, the perovskite film is formed on the side of the charge transfer layer away from the substrate, and the carrier gas carries the first gas phase and the second gas phase to the third region and deposits on the side of the charge transfer layer away from the substrate. The charge transfer layer may be a hole transport layer or an electron transport layer. The functional layer may also include one or more of a transparent conductive layer, a passivation layer, a buffer layer, etc., which may be flexibly selected according to actual functional needs. Exemplarily, the substrate may be a silicon wafer, ITO conductive glass, an oxide silicon wafer coated with electrodes, a ceramic wafer coated with electrodes, or a polymer substrate coated with electrodes.
[0053] In some embodiments of the present application, the first evaporation source further includes an inorganic salt, and the cation of the inorganic salt includes one or more of cesium ions, copper ions, zinc ions, gallium ions, tin ions, and calcium ions;
[0054] and or, the cation of the organic salt comprises one or more of methylamine ion and formamidine ion;
[0055] And / or, the anions of the inorganic salt and the organic salt independently include one or more of iodide ion, bromide ion, chloride ion, fluoride ion and thiocyanate ion.
[0056] S200 evacuates, introduces carrier gas and heats to form perovskite film
[0057] In this step, the evaporation chamber is evacuated and a carrier gas is introduced to heat the first zone and the second zone respectively, so that the first evaporation source and the second evaporation source form a first gas phase and a second gas phase respectively, and the carrier gas carries the first gas phase and the second gas phase to the third zone and deposits them on one side of the substrate to form a perovskite film.
[0058] In some embodiments of the present application, the distance between the first evaporation source and the second evaporation source is 20cm to 70cm. Exemplarily, for example, the distance between the first evaporation source and the second evaporation source is 20cm, 30cm, 40cm, 50cm, 60cm, 70cm, or a range value formed by any two values as endpoint values. The distance between the first evaporation source and the second evaporation source satisfies the given range, which helps inorganic salts and organic salts to form a more uniform film on the substrate, and the ratio and distribution of the two types of substances in the film are appropriate, the crystal growth kinetics are good, and the internal stress of the film is appropriate, so as to obtain a high-quality perovskite film. In some embodiments, the distance between the first evaporation source and the second evaporation source is 40cm to 60cm, and the quality of the perovskite film is better.
[0059] In some embodiments of the present application, the distance between the first evaporation source and the side of the substrate facing the first evaporation source is 50 cm to 90 cm, and the distance between the second evaporation source and the side of the substrate facing the second evaporation source is 10 cm to 30 cm. Exemplarily, the distance between the first evaporation source and the side of the substrate facing the first evaporation source is 30 cm, 40 cm, 50 cm, 60 cm, 70 cm, 80 cm, 90 cm, or a range value formed by any two values as endpoint values, and the distance between the second evaporation source and the side of the substrate facing the second evaporation source is 10 cm, 15 cm, 20 cm, 25 cm, 30 cm, or a range value formed by any two values as endpoint values. The distance between the first / second evaporation source and the side of the substrate facing the first / second evaporation source respectively meets the given range, which can promote uniform mixing between gas phase particles, achieve mutual self-consistency, reduce the deposition rate of the film to a certain extent, and is conducive to enhancing the orderliness of the film and reducing the probability of film defects. The evaporation source can form a uniform film on the substrate, improve the utilization rate of the material, reduce losses, and the microstructure of the film is suitable. The internal stress of the film is reduced to improve its mechanical stability, and the chance of particles or other contaminants that may be generated by evaporation reaching the base is reduced, and a high-quality perovskite film is obtained. In addition, inorganic salts can be deposited on the substrate more than organic salts. In some embodiments, the distance between the first evaporation source and the substrate is 50cm to 80cm, and the distance between the second evaporation source and the substrate is 10cm to 20cm, and the quality of the perovskite film is better.
[0060] In some embodiments of the present application, the heating rate of the first evaporation source is 10℃ / s to 30℃ / s. Exemplarily, the heating rate of the first evaporation source is 10℃ / s, 15℃ / s, 20℃ / s, 25℃ / s, 30℃ / s or any two values as the range value formed by the endpoint values. The first evaporation source is quickly heated to the required evaporation temperature. In addition, if the heating rate of the first evaporation source is too fast, it is easy to cause too much organic salt to be deposited on the substrate, it is easy to cause the film to be unevenly distributed on the substrate, it is easy to cause the internal stress of the film to increase and cause low mechanical stability, it is easy to cause the adhesion of the film to decrease, and it is easy to increase film defects. The heating rate of the first evaporation source meets the given range, which can reduce the heating time required from room temperature to the evaporation temperature, thereby improving production efficiency; avoiding the substrate being in a high temperature state for a long time and causing changes in the properties of the substrate material; reducing the residence time of the material in the evaporation source to avoid the risk of material decomposition or reaction with the container; reducing film stress. As a result, a high-quality film with advantages such as uniformity, few defects, low stress, and strong adhesion can be quickly formed on the substrate, and the heating time is short and the production efficiency is high.
[0061] In some embodiments of the present application, the evaporation time of the first evaporation source is 20 min to 80 min. Exemplarily, the evaporation time of the first evaporation source is 20 min, 30 min, 40 min, 50 min, 60 min, 70 min, 80 min, or a range value formed by any two values as endpoint values. This helps to form a uniform perovskite film with a suitable thickness.
[0062] In some embodiments of the present application, the heating rate of the second evaporation source is 10°C / s to 30°C / s. Exemplarily, the heating rate of the second evaporation source is 10°C / s, 15°C / s, 20°C / s, 25°C / s, 30°C / s, or a range value formed by any two values as endpoint values. The heating rate of the second evaporation source satisfies the given range, which can reduce the heating time required from room temperature to evaporation temperature, thereby improving production efficiency; avoiding the substrate being in a high temperature state for a long time, resulting in changes in the properties of the substrate material; reducing the residence time of the material in the evaporation source to avoid the risk of material decomposition or reaction with the container; and reducing film stress. As a result, a high-quality film with advantages such as uniformity, few defects, low stress, and strong adhesion can be quickly formed on the substrate.
[0063] In some embodiments of the present application, the evaporation time of the second evaporation source is 10 min to 50 min. Exemplarily, the evaporation time of the second evaporation source is 10 min, 20 min, 30 min, 40 min, 50 min, or a range value formed by any two values as endpoint values. This helps to form a uniform perovskite film with a suitable thickness.
[0064] In some embodiments of the present application, the carrier gas is an inert gas. For example, the carrier gas includes nitrogen and / or argon. Thus, the carrier gas is prevented from reacting with other substances.
[0065] In some embodiments of the present application, the chamber pressure after the evaporation chamber is evacuated is less than 1×10 -3 Pa. The chamber pressure after the evaporation chamber is evacuated satisfies the given conditions, which helps to form saturated vapor pressure to vaporize the solid evaporation material.
[0066] In some embodiments of the present application, the thickness of the perovskite film is 10nm to 100μm. Exemplarily, the thickness of the perovskite film is 100nm, 500nm, 1μm, 10μm, 20μm, 50μm, 80μm, 100μm, or a range value formed by any two values as endpoint values. The thickness of the perovskite film meets the given range, and the perovskite film has good absorption performance, stability and repeatability.
[0067] In some embodiments of the present application, the band gap of the perovskite film is 0.9 eV to 3.0 eV. Exemplarily, the band gap of the perovskite film is 0.9 eV, 1.0 eV, 1.5 eV, 2.0 eV, 2.5 eV, 3.0 eV, or a range formed by any two values as endpoint values. Thus, the method of the present application can be used to obtain a perovskite film that meets different band gap requirements.
[0068] In addition, the present application further proposes a system for preparing a perovskite film for implementing the method for preparing a perovskite film described in the first aspect of the present application, see Figure 2 The system 10 comprises: an evaporation chamber 100, a first heating device 200 and a second heating device 300, wherein the evaporation chamber 100 comprises:
[0069] A first area 110, the first area is used to accommodate a first evaporation source;
[0070] A second area 120, the second area is located at one side of the first area, and the second area is used to accommodate a second evaporation source;
[0071] A third area 130, the third area is located at a side of the second area away from the first area, and the third area is used to accommodate a substrate;
[0072] a vent 140, the vent being located at a side of the first zone away from the second zone, the vent being used to introduce carrier gas into the evaporation chamber;
[0073] The first heating device 200 is used to heat the first zone, and the second heating device 300 is used to heat the second zone.
[0074] In some embodiments of the present application, the system 10 further comprises: a pressure regulating device 400, which is used to regulate the pressure in the evaporation chamber. Thus, the pressure in the evaporation chamber can be no higher than 1×10 -3 Pa. Exemplarily, the pressure regulating device may be a pressure pump.
[0075] In some embodiments of the present application, the evaporation chamber 100 may be formed by a glass tubular device, and the first region 110 and the third region 120 may be independently provided by different graphite crucibles.
[0076] The second aspect of the present application provides a solar cell, the solar cell comprising: a perovskite film, the perovskite film is prepared by the method for preparing a perovskite film described in the first aspect of the present application. Therefore, the solar cell of the present application has excellent photoelectric performance, repeatability and stability.
[0077] In some embodiments of the present application, the solar cell includes a single-junction perovskite solar cell or a tandem perovskite solar cell.
[0078] In some embodiments of the present application, the tandem perovskite solar cell includes a two-terminal tandem perovskite solar cell, a three-terminal tandem perovskite solar cell, or a four-terminal tandem perovskite solar cell.
[0079] The third aspect of the present application provides a power generation device, the power generation device comprising: the solar cell described in the second aspect of the present application. Therefore, the light emitting device of the present application has excellent photoelectric performance, repeatability and stability.
[0080] In this application, the power generation device refers to a power generation system that uses the photovoltaic effect to directly convert solar radiation energy into electrical energy, which is divided into a stand-alone photovoltaic power generation system (Stand-alone PV System) and a grid-connected photovoltaic power generation system (Grid-connected PV System). The stand-alone photovoltaic power generation system consists of a solar photovoltaic array composed of photovoltaic components, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. The grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter) and a system monitoring part.
[0081] The fourth aspect of the present application provides an electrical device, the electrical device comprising: the solar cell according to the second aspect of the present application. Therefore, the electrical device of the present application has excellent photoelectric performance, repeatability and stability.
[0082] In the present application, electrical devices may include lighting elements, display elements, mobile devices, etc., and may specifically include street lights, signal indicators, insect killer lamps, electric fans, electric toys, electric tools, battery vehicles, electric vehicles, ships, spacecraft, etc., among which electric toys may include fixed or mobile electric toys, for example, game consoles, electric car toys, electric ship toys and electric airplane toys, etc., and spacecraft may include airplanes, rockets, space shuttles and spacecraft, etc.; photovoltaic power generation systems may include large-scale ground photovoltaic power generation systems, distributed photovoltaic power generation and building integrated photovoltaic power generation systems, etc.
[0083] It should be noted that the features and advantages described above for the method for preparing perovskite thin film in the first aspect of the present application are also applicable to the solar cell described in the second aspect, the power generation device described in the third aspect and the power consumption device described in the fourth aspect of the present application, and will not be repeated here.
[0084] The scheme of the present application will be explained below in conjunction with the embodiments. It will be appreciated by those skilled in the art that the following embodiments are only used to illustrate the present application and should not be considered as limiting the scope of the present application. If no specific technology or conditions are indicated in the embodiments, the technology or conditions described in the literature in this area or the product specification are carried out. The reagents used or the instruments that do not indicate the manufacturer are all conventional products that can be obtained commercially.
[0085] Example 1
[0086] In this embodiment, a solar cell is prepared according to the following method:
[0087] 1. Provide transparent glass with a thickness of 3mm;
[0088] 2. FTO is formed on transparent glass by magnetron sputtering with a thickness of 200 nm;
[0089] 3. Forming NiO hole transport layer on FTO by magnetron sputtering X , a substrate with a thickness of 20 nm is obtained;
[0090] 4. Adoption Figure 2 The system for preparing the perovskite film shown in the figure is as follows: CsI, CsBr, and FAI are placed in the first zone of the evaporation chamber as the first evaporation source, and PbI2 is placed in the second zone of the evaporation chamber as the second evaporation source; the substrate obtained in step 3 is placed obliquely on the bracket in the third zone of the evaporation chamber, and the hole transport layer is facing the second zone; the distance between the first evaporation source and the second evaporation source is 50 cm, and the distance between the second evaporation source and the side of the substrate facing the second evaporation source is 18 cm;
[0091] The evaporation chamber was evacuated to a pressure of 1×10 -3Pa, nitrogen was introduced into the evaporation chamber, the first zone was heated to 180°C, the second zone was heated to 375°C, the heating rate of the first evaporation source was 20°C / s, the evaporation time was 40 min, the heating rate of the second evaporation source was 20°C / s, and the evaporation time was 20 min; finally, the thickness of the formed perovskite film was 600 nm;
[0092] 5. Thermal evaporation of C on perovskite films 60 , thickness is 25nm;
[0093] 6. Using thermal evaporation at C 60 Bathcopper(BCP) is formed on the surface with a thickness of 5 nm;
[0094] 7. Cu is formed on the BCP by thermal evaporation with a thickness of 90 nm to obtain a solar cell.
[0095] Example 2
[0096] A solar cell was prepared according to the method of Example 1, except that in step 4, the distance between the second evaporation source and the substrate was 30 cm.
[0097] Example 3
[0098] A solar cell is prepared according to the method of Example 1, except that in step 4, the distance between the first evaporation source and the second evaporation source is 70 cm.
[0099] Example 4
[0100] A solar cell was prepared according to the method of Example 1, except that, in step 4, the distance between the second evaporation source and the side of the substrate facing the second evaporation source was 10 cm.
[0101] Example 5
[0102] A solar cell is prepared according to the method of Example 2, except that in step 4, the distance between the first evaporation source and the second evaporation source is 20 cm.
[0103] Example 6
[0104] A solar cell was prepared according to the method of Example 1, except that in step 4, the first zone was heated to a temperature of 120°C.
[0105] Example 7
[0106] A solar cell was prepared according to the method of Example 1, except that in step 4, the first zone was heated to a temperature of 250°C.
[0107] Example 8
[0108] A solar cell was prepared according to the method of Example 1, except that in step 4, the second zone was heated to a temperature of 300°C.
[0109] Example 9
[0110] A solar cell was prepared according to the method of Example 1, except that in step 4, the second zone was heated to a temperature of 400°C.
[0111] Example 10
[0112] A solar cell was prepared according to the method of Example 1, except that in step 4, the heating rate of the first evaporation source was 10° C. / s.
[0113] Embodiment 11
[0114] A solar cell was prepared according to the method of Example 1, except that in step 4, the heating rate of the first evaporation source was 30° C. / s.
[0115] Example 12
[0116] A solar cell was prepared according to the method of Example 1, except that in step 4, the heating rate of the second evaporation source was 10° C. / s.
[0117] Example 13
[0118] A solar cell was prepared according to the method of Example 1, except that in step 4, the heating rate of the second evaporation source was 30° C. / s.
[0119] Embodiment 14
[0120] A solar cell is prepared according to the method of Example 1, except that in step 4, the distance between the first evaporation source and the second evaporation source is 80 cm.
[0121] Embodiment 15
[0122] A solar cell was prepared according to the method of Example 1, except that, in step 4, the distance between the second evaporation source and the side of the substrate facing the second evaporation source was 5 cm.
[0123] Example 16
[0124] A solar cell was prepared according to the method of Example 1, except that the heating temperature of the first zone was 700°C.
[0125] Embodiment 17
[0126] A solar cell was prepared according to the method of Example 1, except that the heating temperature of the second zone was 150°C.
[0127] Embodiment 18
[0128] A solar cell was prepared according to the method of Example 1, except that the heating rate of the first evaporation source was 3° C. / s.
[0129] Embodiment 19
[0130] A solar cell was prepared according to the method of Example 1, except that the heating rate of the second evaporation source was 35° C. / s.
[0131] Comparative Example 1
[0132] Solar cells were prepared according to the method of Example 1, except that, in step 4, a perovskite precursor mixture (PbI2, CsI, CsBr, FAI) was placed in the second zone as an evaporation source, the second zone was heated to a temperature of 375°C, the heating rate of the evaporation source was 15°C / s, the evaporation rate was 20min, and finally, the thickness of the formed perovskite film was 550nm.
[0133] Comparative Example 2
[0134] A solar cell was prepared according to the method of Example 1, except that PbI2 was placed in the first zone of the evaporation chamber as the first evaporation source, and CsI, CsBr, and FAI were placed in the second zone of the evaporation chamber as the second evaporation source.
[0135] Test Case
[0136] The performance of the perovskite cells prepared in the above Examples 1 to 19 and Comparative Examples 1 to 2 was tested respectively.
[0137] The specific test method is: place the prepared battery device under a light source with an intensity P of 100mW / cm 2 The AM1.5G standard simulates sunlight. By changing the bias voltage of the load on the battery device, the current value of the battery device is obtained, thereby drawing the current density (J)-voltage (V) curve of the battery device, and thus obtaining the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency of the battery device, that is, battery efficiency PCE: V and J of the battery device change with the change of external load. When the external load is short-circuited, V=0, and J at this time is called short-circuit current density Jsc; when the external load is disconnected, J=0, and V at this time is called open circuit voltage Voc; the output power of the battery device has a maximum value, which is called the maximum power point Pmax, Pmax divided by the effective light-receiving area of the battery device, that is, the battery efficiency PCE; the fill factor FF of the battery device is PCE×P / (Jsc×Voc).
[0138] Table 1 Performance parameters of different solar cells
[0139]
[0140]
[0141] It can be seen from Table 1 that the performance of the solar cells prepared in Examples 1 to 19 is better than that of the solar cells prepared in Comparative Examples 1 to 2. This shows that it is helpful to form a more complete perovskite crystal structure, improve carrier transport, reduce film defects, obtain high-quality perovskite films, and improve the photoelectric performance and stability of perovskite cells.
[0142] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.
Claims
1. A method for preparing a perovskite film, characterized in that: include: Putting a first evaporation source into a first zone of an evaporation chamber, putting a second evaporation source into a second zone of the evaporation chamber, and putting a substrate into a third zone of the evaporation chamber, wherein the second zone is located at one side of the first zone, and the third zone is located at a side of the second zone away from the first zone, wherein the first evaporation source includes an organic salt, and the second evaporation source includes a lead halide; The evaporation chamber is evacuated and a carrier gas is introduced, and the first area and the second area are heated respectively, so that the first evaporation source and the second evaporation source form a first gas phase and a second gas phase respectively, and the carrier gas carries the first gas phase and the second gas phase to the third area and deposits them on one side of the substrate to form a perovskite film.
2. The method according to claim 1, characterized in that: The heating temperature of the first zone is 100°C to 600°C; And / or, the heating temperature of the second zone is 200°C to 800°C.
3. The method according to claim 1, characterized in that The heating temperature of the first zone is 120°C to 250°C; And / or, the heating temperature of the second zone is 300°C to 400°C.
4. The method according to claim 1, characterized in that: The distance between the first evaporation source and the second evaporation source is 20 cm to 70 cm; and / or, the distance between the first evaporation source and the side of the substrate facing the first evaporation source is 50 cm to 90 cm; And / or, the distance between the second evaporation source and the side of the substrate facing the second evaporation source is 10 cm to 30 cm.
5. The method according to claim 1, characterized in that The heating rate of the first evaporation source is 10°C / s to 30°C / s; And / or, the evaporation time of the first evaporation source is 20 min to 80 min; and / or, the heating rate of the second evaporation source is 10°C / s to 30°C / s; And / or, the evaporation time of the second evaporation source is 10 min to 50 min; And / or, the chamber pressure after the evaporation chamber is evacuated is lower than 1×10 -3 Pa.
6. The method according to claim 1, characterized in that The first evaporation source further comprises an inorganic salt, wherein the cation of the inorganic salt comprises one or more of cesium ions, copper ions, zinc ions, gallium ions, tin ions and calcium ions; and or, the cation of the organic salt comprises one or more of methylamine ion and formamidine ion; And / or, the anions of the inorganic salt and the organic salt independently include one or more of iodide ion, bromide ion, chloride ion, fluoride ion and thiocyanate ion; And / or, the base includes a stacked substrate and a charge transport layer, and the carrier gas carries the first gas phase and the second gas phase to the third region and deposits them on a side of the charge transport layer away from the substrate.
7. The method according to claim 1, characterized in that The thickness of the perovskite film is 10 nm to 100 μm.
8. A solar cell, characterized in that: include: A perovskite film, wherein the perovskite film is obtained by the method for preparing a perovskite film according to any one of claims 1 to 7.
9. The solar cell according to claim 8, characterized in that The solar cell comprises a single-junction perovskite solar cell or a stacked perovskite solar cell.
10. The solar cell according to claim 9, characterized in that: The tandem perovskite solar cell includes a two-terminal tandem perovskite solar cell, a three-terminal tandem perovskite solar cell or a four-terminal tandem perovskite solar cell.
11. A power generation device, characterized in that: include: The solar cell according to any one of claims 8 to 10.
12. An electrical device, characterized in that: include: The solar cell according to any one of claims 8 to 10.