Electroplating equipment and electroplating method

Abstract

The invention provides electroplating equipment and an electroplating method. The electroplating equipment comprises an electroplating cavity, a wafer holding device, a stirring mechanism and a driving mechanism, the stirring mechanism is arranged in the electroplating cavity, and when the wafer holding device holds a wafer, the stirring mechanism is parallel to the wafer; the driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the electroplating liquid; wherein each main periodic reciprocating motion comprises N continuous auxiliary periodic reciprocating motions, and N is an integer greater than or equal to 2; in the same main period, the end point position in the previous auxiliary period is the starting point position in the next adjacent auxiliary period, the auxiliary stroke in the same auxiliary period is a real number larger than 0, and the auxiliary stroke is the distance between the end point position and the starting point position in the same auxiliary period. By regulating and controlling the movement mode of the stirring mechanism, the uniform electroplating effect is achieved while the electroplating efficiency is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor electroplating, and in particular relates to electroplating equipment and an electroplating method. Background Art

[0002] In the post-Moore era, advanced packaging technology for chip integration is playing an increasingly important role. Among them, 3D stacking technology, regional silicon interconnection technology, embedded multi-chip interconnection bridging technology, etc. all have the demand for high aspect ratio hole filling electroplating. At present, there are some recognized significant difficulties in the high aspect ratio hole filling process: it is difficult for the plating solution to completely immerse in the deep hole. Once the plating solution is not completely immersed in the deep hole, the electroplating process will cause plating defects such as virtual plating and voids, reducing the yield rate of the electroplated product; in addition, with the increase of the aspect ratio, the proportion of the diffusion-controlled area in the electroplated hole also increases, which will reduce the electroplating efficiency and electroplating quality. In order to solve the above problems, strengthening the stirring of the plating solution is a solution. For this purpose, a stirring mechanism can be set in the electroplating equipment. The stirring mechanism can swing horizontally in the plating solution or vertically in the plating solution. The swing direction of the stirring mechanism depends on the electroplating mode of the electroplating machine. When the electroplating mode of the electroplating machine is horizontal electroplating, the swing mode of the stirring mechanism in the electroplating solution is horizontal swing; when the electroplating mode of the electroplating machine is vertical hanging plating, the swing mode of the stirring mechanism in the electroplating solution is vertical swing. The stirring mechanism swinging in the electroplating solution is used to enhance the mass transfer of the electroplating solution and increase the relative speed between the electroplating solution and the surface of the workpiece. As an exemplary stirring mechanism, the stirring paddle has a plurality of parallel blades, and there is a certain gap between adjacent blades. When the stirring paddle moves, a liquid vortex is generated. The liquid vortex generates a high-speed stirring flow on the lower surface (facing down) of the wafer, thereby enhancing mass transfer. In order to further enhance the mass transfer of the plating solution, the method usually chosen is to simply increase the speed of the reciprocating motion of the paddle. However, the high-speed reciprocating motion of the stirring paddle will cause a large difference in the flow rate of the plating solution in each area of ​​the plating chamber, which will in turn cause a large difference in the flow rate of the plating solution in each area of ​​the workpiece, and a large difference in mass transfer in each area, resulting in uneven electroplating and reduced electroplating quality. Summary of the invention

[0003] In order to avoid the situation where simply increasing the speed of the reciprocating motion of the paddles results in large differences in the flow rate of the plating solution at different locations in the plating chamber, thereby causing uneven electroplating, the present invention adjusts the motion mode of the stirring mechanism to improve the electroplating efficiency while enhancing the ability of the plating solution to penetrate deep holes, thereby achieving a uniform electroplating effect.

[0004] In a first aspect, the present application proposes an electroplating device, comprising: an electroplating chamber, a wafer holding device, a stirring mechanism and a driving mechanism; wherein the electroplating chamber is used to contain a plating solution; the wafer holding device is configured to hold a wafer; the stirring mechanism is arranged inside the electroplating chamber, and when the wafer holding device holds a wafer, the stirring mechanism is arranged parallel to the wafer; the driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the plating solution; wherein each of the main periodic reciprocating motions includes N continuous sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; within the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is at the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

[0005] According to a specific implementation method of an embodiment of the present application, the starting point position of the main periodic reciprocating motion is the motion origin position, the end point position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

[0006] According to a specific implementation of the embodiment of the present application, the range of the main stroke includes: 10-30mm.

[0007] According to a specific implementation of the embodiment of the present application, in the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

[0008] According to a specific implementation of an embodiment of the present application, when N is greater than or equal to 3, each secondary stroke in the same primary periodic reciprocating motion may be equal or unequal.

[0009] According to a specific implementation of the embodiment of the present application, the range of the secondary stroke includes: 1-10mm.

[0010] According to a specific implementation of the embodiment of the present application, the stirring mechanism performs the secondary periodic reciprocating motion at a preset frequency, wherein the range of the preset frequency includes: 3-12 Hz.

[0011] According to a specific implementation of the embodiment of the present application, the stirring mechanism performs the secondary periodic reciprocating motion with a preset amplitude, wherein the range of the preset amplitude includes: 12-20mm.

[0012] According to a specific implementation of the embodiment of the present application, the time range used by each of the sub-cycles includes: 1-600s.

[0013] In the second aspect, the present application proposes an electroplating method, comprising: keeping a wafer in a plating chamber containing a plating solution; a driving mechanism drives a stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the plating solution; wherein each of the main periodic reciprocating motions includes N continuous sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; within the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is at the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

[0014] According to a specific implementation method of an embodiment of the present application, the starting point position of the main periodic reciprocating motion is the motion origin position, the end point position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

[0015] According to a specific implementation of the embodiment of the present application, in the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

[0016] According to a specific implementation of an embodiment of the present application, when N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

[0017] The electroplating equipment and electroplating method of the present invention regulate the motion mode of the stirring mechanism by performing continuous main periodic reciprocating motions of the stirring mechanism in the electroplating chamber, and decomposing each main periodic reciprocating motion into N continuous sub-periodic reciprocating motions with the same motion mode, where N is an integer greater than or equal to 2. While improving the electroplating efficiency, the present invention can enhance the ability of the electroplating solution to penetrate deep holes, thereby achieving a uniform electroplating effect. Other features and advantages of the present invention will be described in the subsequent description, and will partially become apparent from the description, or will be understood through the implementation of the present invention. The objects and other advantages of the present invention can be achieved and obtained through the structures indicated in the description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A schematic diagram showing a motion mode of a driving mechanism driving a stirring mechanism of an electroplating device in the prior art is shown;

[0020] Figure 2 Shown in Figure 1 The flow rate results of the plating solution on the lower surface of the wafer in the motion mode of the stirring mechanism;

[0021] Figure 3 A schematic structural diagram of an electroplating device according to an embodiment of the present invention is shown;

[0022] Figure 4 A schematic top view of a stirring mechanism according to an embodiment of the present invention is shown;

[0023] Figure 5 A schematic diagram showing a motion mode of a stirring mechanism according to an embodiment of the present invention is shown;

[0024] Figure 6 A schematic diagram showing another motion mode of the stirring mechanism according to an embodiment of the present invention; and

[0025] Figure 7 The results of the electroplating liquid flow rate on the lower surface of the wafer under the motion mode of the stirring mechanism implemented according to the present invention are shown. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] In electroplating equipment, in order to enhance the agitation of the plating solution, a stirring mechanism can be installed below the wafer and opposite to the wafer. During electroplating, the stirring mechanism reciprocates in a direction parallel to the wafer to enhance the agitation of the plating solution. Figure 1 , Figure 1The schematic diagram of the motion mode of the driving mechanism driving the stirring mechanism of the electroplating equipment in the prior art is shown, wherein the horizontal axis represents the process time in seconds, and the vertical axis represents the change in the position of the stirring mechanism in mm. The diagram uses the change law of the stirring mechanism position over time to represent the motion mode of the driving mechanism driving the stirring mechanism. The driving mechanism drives the stirring mechanism to vibrate at a specified frequency and a specified amplitude inside the electroplating chamber, such as Figure 1 As shown in the figure, the amplitude is approximately 20 mm and the frequency is approximately 5 Hz. The flow rate of the electroplating solution at the lower surface of the wafer under this vibration mode is simulated and calculated. The simulation results are shown in the figure below. Figure 2 As shown in the figure, the plating solution flow rate at various locations on the lower surface of the wafer varies greatly. It can be seen from the figure that the maximum plating solution flow rate at various locations on the lower surface of the wafer is about 160 mm / s, the minimum is about 60 mm / s, and the difference is about 100 mm / s. This leads to a large difference in the amount of plating solution contacted by various locations on the lower surface of the wafer, which in turn affects the uniformity of electroplating.

[0028] The present invention aims to improve the vibration mode of the stirring mechanism so as to better control the stirring effect of the electroplating solution and achieve the purpose of uniform electroplating.

[0029] Please refer to Figure 3 and Figure 4 , an embodiment of the present invention discloses an electroplating device for electroplating a wafer surface. The electroplating device includes an electroplating chamber 100, a wafer holding device 200, a stirring mechanism 300 and a driving mechanism 400. The electroplating chamber 100 is used to contain the electroplating liquid; the wafer holding device 200 is used to hold the wafer 500; the stirring mechanism 300 includes a plurality of parallel arranged strip-shaped paddles 301, and gaps 302 are formed between adjacent paddles 301. During the electroplating process, the gaps 302 between adjacent paddles 301 are for liquid and electric fields to pass through. The paddle 301 is made of an insulator, for example, it can be a plastic material, including PVC, PC, CPVC, PPS, PEEK, PTFE, etc. The stirring mechanism 300 is arranged in the electroplating chamber 100, and when the wafer 500 is held on the wafer holding device 200, the stirring mechanism 300 is parallel to the wafer 500.

[0030] The driving mechanism 400 is arranged outside the electroplating chamber 100, and the driving mechanism 400 is configured to drive the stirring mechanism 300 to generate continuous main periodic reciprocating motion in a direction parallel to the wafer 500 held by the wafer holding device 200, so that the stirring mechanism 300 stirs the electroplating solution, each main periodic reciprocating motion includes N continuous sub-periodic reciprocating motions, N is an integer greater than or equal to 2; and the amplitude and frequency of adjacent sub-periodic reciprocating motions are equal; in the same main cycle, the end position of the stirring mechanism 300 in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism 300 in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 in the same sub-cycle. In some embodiments, in the same process, the amplitude and frequency of each sub-periodic reciprocating motion are equal, which can ensure strong stirring of the electroplating solution while making the difference in the flow rate of the electroplating solution at various locations in the electroplating chamber more uniform. Specifically, when all places in the electroplating chamber are able to experience the electroplating solution of various speeds in a sub-cycle, the average speed of the electroplating solution will be maintained within a relatively stable range, thereby improving the uniformity of the electroplating solution.

[0031] Furthermore, the driving mechanism 400 includes at least one driving member, and the selection range of the driving member includes but is not limited to a motor, an electric motor, etc. When the number of the driving members is greater than or equal to 2, the driving members are symmetrically arranged about the electroplating chamber 100 to stabilize the stirring mechanism 300, keep the stirring mechanism 300 balanced, and thus achieve the purpose of stably stirring the electroplating solution. Figure 3 As shown, in this embodiment, the driving mechanism 400 includes two driving members, which are symmetrically arranged on both sides of the electroplating chamber 100.

[0032] For example, please refer to Figure 3 , when the stirring mechanism 300 is reciprocating in the electroplating chamber 100, the stirring mechanism 300 is located at the starting point of the movement when the initial state is set, and the driving mechanism 400 drives the stirring mechanism 300 to perform continuous main periodic reciprocating motion parallel to the wafer 500 in the wafer holding device 200. For ease of understanding, the starting point of the stirring mechanism 300 is defined as the origin of the movement in this application; the end point of the stirring mechanism 300 is defined as the reversal position, and the reversal position is the position of the stirring mechanism 300 farthest from the origin of the movement during the main periodic reciprocating motion; then a main periodic reciprocating motion is specifically: the stirring mechanism 300 starts from the starting point of the movement, that is, the origin of the movement, moves toward the end point, and after reaching the end point, that is, the reversal position, moves in the opposite direction to the origin of the movement, and ends at the origin of the movement. The same process may include multiple repeated main periodic reciprocating motions, so that the stirring mechanism 300 strengthens the stirring of the plating solution, thereby achieving the effect of uniform electroplating of the wafer 500. Combined with Figure 5As shown, 2 main cycles are shown. In this embodiment, the movement origin position of the stirring mechanism 300 is 0 mm, and the reversal position is 32 mm.

[0033] Furthermore, each main periodic reciprocating motion performed by the stirring mechanism 300 specifically includes: the stirring mechanism 300 performs N sub-periodic reciprocating motions at a preset frequency f1 and a preset amplitude A1. Figure 5 As shown, each main cycle includes 3 sub-cycles, and the movement frequency of the stirring mechanism 300 in each sub-cycle is f1, and the movement amplitude is A1. In each main cycle, the stirring mechanism 300 undergoes 3 sub-periodic reciprocating motions, gradually reaching the reversal position from the movement origin position, and when reaching the end of the main cycle, it returns to the movement origin position and starts the next main periodic reciprocating motion.

[0034] Among them, a main periodic reciprocating motion includes a main stroke L and at least one sub-stroke M. The main stroke is the maximum distance between the stirring mechanism 300 and the origin of the motion, that is, the distance between the origin of the motion and the reversal position; the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 in the same sub-period. It should be understood that the main stroke L is a value determined according to the size of the plating chamber 100. Generally, the size of the plating chamber 100 is determined, and the value of the main stroke L is a fixed value. For example, according to the size of the plating chamber 100, the main stroke L is generally a certain value between 10-30mm, for example, it can be 10mm, 20mm, 30mm, etc.; and the number of sub-periods N included in each main periodic reciprocating motion is a manually set value, N is an integer greater than or equal to 2, indicating that a main periodic reciprocating motion consists of N consecutive The secondary periodic reciprocating motion is composed of two secondary periodic reciprocating motions; the frequency f1 and amplitude A1 of each secondary periodic reciprocating motion are artificially set values; for example, the frequency f1 is generally preset in the range of 3-12Hz, for example, it can be 3Hz, 5Hz, 10Hz, 12Hz, etc.; the amplitude A1 is generally preset to 12-20mm, for example, it can be 12mm, 15mm, 18mm, 20mm, etc.; and the secondary stroke M of a secondary cycle is also a manually set value before the process starts, and the number of secondary strokes is N-1. It should be noted that the time t used for each secondary cycle in each main periodic reciprocating motion is generally preset to 1-600s, for example, it can be 1s, 60s, 100s, 300s, 600s, etc.

[0035] Furthermore, when N is greater than or equal to 3, that is, the number of secondary strokes is greater than or equal to 2, all secondary strokes may be equal or unequal, and are set according to actual process conditions during operation. Specifically, when N is greater than or equal to 3, it means that one main periodic reciprocating motion is composed of greater than or equal to 3 consecutive secondary periodic reciprocating motions, that is, the main stroke L is divided into N times, and N-1 secondary strokes will be generated in the process of completing the main stroke L, and the N-1 secondary strokes may be equal or unequal.

[0036] For example, please refer to Figure 5 When N is equal to 3, that is, in this embodiment, L includes 2 secondary strokes, the distance traveled after each secondary cycle is completed can be set in a manner that is unequal, that is, secondary stroke M1 ≠ secondary stroke M2. Figure 5 As shown, a main periodic reciprocating motion includes a main stroke L and two sub-strokes M1 and M2, and the number of sub-periodic reciprocating motions in a main periodic reciprocating motion is N=3; the preset frequency f1=5Hz, the preset amplitude A1=20mm in each sub-periodic reciprocating motion, and the time t=1s used for each sub-cycle; the main stroke is L=12mm, the sub-strokes M1=4, and M2=8.

[0037] Please refer to Figure 6 In another embodiment, when N is equal to 3, that is, in this embodiment, L includes 2 secondary strokes, the distance traveled after each secondary cycle is equal, that is, secondary stroke M1 = secondary stroke M2. Figure 6It can be seen that one main periodic reciprocating motion of the stirring mechanism 300 is composed of three sub-periodic reciprocating motions; one main periodic reciprocating motion includes one main stroke and two equal sub-strokes, namely N=3, M1=M2=6mm, and main stroke L=12mm; in each sub-periodic reciprocating motion, the vibration frequency of the stirring mechanism 300 is the preset frequency f1=5Hz, and the preset amplitude A1=20mm; the time used for each sub-periodic reciprocating motion is t=1s. When the adjacent sub-periodic reciprocating motions are switched, the stirring mechanism 300 does not need to return to the motion origin of the current sub-period, but directly uses the end point of the current sub-period as the motion origin of the next sub-period to move the next sub-period. In this way, by setting the starting position and the end position of each sub-period, that is, setting the sub-stroke, the stirring mechanism 300 can gradually move outward in the motion range of each sub-period within one main cycle, and the peak and valley values ​​of the stirring mechanism position gradually increase. In the last sub-period, the farthest moving position of the stirring mechanism 300 reaches the reversal position. Similarly, when the stirring mechanism 300 completes a main cycle in the plating chamber 100, the driving mechanism 400 drives the stirring mechanism 300 to the motion origin of the last sub-cycle, and then continues to drive the stirring mechanism 300 back to the motion origin of the first sub-cycle, that is, the motion origin of the main cycle, and then continues to perform the next main cycle reciprocating motion to achieve the effect of fully stirring the plating solution.

[0038] The present invention also provides an electroplating method, wherein a wafer 500 is kept in an electroplating chamber containing an electroplating solution, and the wafer 500 is electroplated. A stirring mechanism 300 is provided inside the electroplating chamber 100 and parallel to the wafer 500. The stirring mechanism 300 is connected to a driving mechanism 400. The driving mechanism 400 drives the stirring mechanism 300 to perform continuous main periodic reciprocating motions parallel to the wafer 500, so that the stirring mechanism 300 stirs the electroplating solution, wherein each main periodic reciprocating motion includes N continuous sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal;

[0039] In the same main cycle, the end position of the stirring mechanism 300 in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism 300 in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism 300 in the same sub-cycle.

[0040] Furthermore, the starting position of the main periodic reciprocating motion is the origin position of the motion; the end position of the main periodic reciprocating motion is the reversal position; the reversal position is the position of the stirring mechanism farthest from the origin position of the motion during the main periodic reciprocating motion; each main periodic reciprocating motion has a main stroke, which is the distance between the origin position of the motion and the reversal position.

[0041] Furthermore, in the same process, the amplitude of each secondary periodic reciprocating motion is equal.

[0042] Furthermore, when N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

[0043] During the process according to the solution proposed by the present invention, the flow rate of the electroplating solution at various locations near the lower surface of the wafer 500 is simulated and calculated. Please refer to the results. Figure 7 , Figure 7 The diagram shows the flow rate of the plating solution close to the lower surface of the wafer 500 during each sub-periodic reciprocating motion of the main periodic reciprocating motion, wherein the horizontal axis represents the horizontal position coordinate of the wafer with the center of the wafer as the 0 coordinate, in mm, and the vertical axis represents the flow rate of the plating solution on the lower surface of the wafer, in mm / s; line 601 is the flow rate of the plating solution on the lower surface of the wafer 500 during the first sub-periodic reciprocating motion; line 602 is the flow rate of the plating solution on the lower surface of the wafer 500 during the second sub-periodic reciprocating motion; line 603 is the flow rate of the plating solution on the lower surface of the wafer 500 during the third sub-periodic reciprocating motion; line 604 is the average flow rate of the plating solution on the lower surface of the wafer in the electroplating method of the embodiment of the present invention, specifically, the average flow rate of the plating solution at various locations on the lower surface of the wafer after undergoing a complete main periodic reciprocating motion. Figure 7 It can be seen that, although the flow rate difference of the electroplating solution at various locations on the lower surface of the wafer is relatively large during the first sub-periodic reciprocating motion, the second sub-periodic reciprocating motion, and the third sub-periodic reciprocating motion (about 100 mm / s), after a main periodic reciprocating motion is completed, that is, after the first sub-periodic reciprocating motion, the second sub-periodic reciprocating motion, and the third sub-periodic reciprocating motion, it can be seen from line 604 that the flow rate of the electroplating solution at various locations on the lower surface of the wafer is basically maintained within a relatively stable range, with a small difference (about 20 mm / s), and the flow rate of the electroplating solution can also be maintained at a higher flow rate (about 110 mm / s). This shows that after the design of the electroplating equipment and electroplating method of the present invention, the flow rate of the electroplating solution on the lower surface of the wafer 500 can reach a relatively uniform and high level, and then achieve a stable and uniform electroplating effect while ensuring that the stirring intensity of the electroplating solution is sufficient.

[0044] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein; and these modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electroplating device, characterized in that: include: Electroplating chamber, wafer holding device, stirring mechanism and driving mechanism; wherein, The electroplating chamber is used to contain the electroplating solution; The wafer holding device is configured to hold a wafer; The stirring mechanism is arranged inside the electroplating chamber, and when the wafer holding device holds a wafer, the stirring mechanism is arranged parallel to the wafer; The driving mechanism is configured to drive the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer so that the stirring mechanism stirs the electroplating solution; Each of the main periodic reciprocating motions includes N consecutive sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; In the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

2. The electroplating equipment according to claim 1, characterized in that: The starting position of the main periodic reciprocating motion is the motion origin position, and the end position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

3. The electroplating equipment according to claim 2, characterized in that: The range of the main stroke includes: 10-30mm.

4. The electroplating equipment according to claim 1, characterized in that: In the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

5. The electroplating equipment according to claim 1, characterized in that: When N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

6. The electroplating equipment according to claim 1 or 5, characterized in that: The range of the secondary stroke includes: 1-10mm.

7. The electroplating equipment according to claim 1, characterized in that: The stirring mechanism performs the secondary periodic reciprocating motion at a preset frequency, wherein the preset frequency range includes: 3-12 Hz.

8. The electroplating equipment according to claim 1 or 7, characterized in that: The stirring mechanism performs the secondary periodic reciprocating motion with a preset amplitude, wherein the preset amplitude ranges from 12 to 20 mm.

9. The electroplating equipment according to claim 1, characterized in that: The time used by each of the sub-cycles ranges from 1 to 600 seconds.

10. An electroplating method, characterized in that: include: maintaining the wafer in a plating chamber containing a plating solution; The driving mechanism drives the stirring mechanism to perform continuous main periodic reciprocating motion parallel to the wafer, so that the stirring mechanism stirs the electroplating solution; Each of the main periodic reciprocating motions includes N consecutive sub-periodic reciprocating motions, N is an integer greater than or equal to 2, and the amplitudes and frequencies of adjacent sub-periodic reciprocating motions are equal; In the same main cycle, the end position of the stirring mechanism in the previous sub-cycle is the starting position of the next adjacent sub-cycle, and the sub-stroke of the stirring mechanism in the same sub-cycle is a real number greater than 0, wherein the sub-stroke is the distance between the end position and the starting position of the stirring mechanism in the same sub-cycle.

11. The electroplating method according to claim 10, characterized in that: The starting position of the main periodic reciprocating motion is the motion origin position, and the end position of the main periodic reciprocating motion is the reversal position, and the reversal position is the position of the stirring mechanism farthest from the motion origin position during the main periodic reciprocating motion; each of the main periodic reciprocating motions has a main stroke, and the main stroke is the distance between the motion origin position and the reversal position.

12. The electroplating method according to claim 11, characterized in that: In the same process, the amplitude of each of the secondary periodic reciprocating motions is equal.

13. The electroplating method according to claim 11, characterized in that: When N is greater than or equal to 3, the secondary strokes in the same primary periodic reciprocating motion may be equal or unequal.

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