Silicon material feeding device and method

Abstract

The invention discloses a silicon material feeding device and method, and relates to the technical field of crystalline silicon production. The device comprises a bearing structure with a hollow cavity, a silicon material storage barrel, a lifting structure and a butt joint structure, the silicon material storage barrel is arranged in the hollow cavity of the bearing structure; the silicon material storage barrel comprises a barrel body and a barrier plate; the barrel is used for storing silicon materials; the barrier plate is movably connected with the bottom of the barrel body and is connected with the lifting structure; the lifting structure drives the barrier plate to change the relative relation between the barrier plate and the bottom of the barrel, so that the bottom of the barrel is switched between a sealed state and a non-sealed state; the butt joint structure is arranged at the lower end of the bearing structure and used for being in butt joint with a main chamber sealing cover or an auxiliary chamber sealing cover of the single crystal furnace so that the silicon materials stored in the barrel can be put into the single crystal furnace when the bottom of the barrel is in a non-sealed state. According to the embodiment, one-time mass feeding can be realized, the crystal silicon production time is shortened, and the production efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of crystalline silicon production, and in particular to a silicon material feeding device and method. Background Art

[0002] As the basic material for the semiconductor industry and the photovoltaic industry, crystalline silicon is mainly prepared by the Czochralski method through a single crystal furnace. The silicon material processing process of the single crystal furnace before pulling the silicon rod mainly includes charging the charging barrel, hanging the material, adding the material, vacuuming and chemically treating the material. However, due to the limitation of the volume of the charging barrel, each time before the single crystal furnace is vacuumed, the process of charging the charging barrel, hanging the material and adding the material to the single crystal furnace needs to be repeated many times. Multiple feeding leads to a waste of manpower and time. In addition, the vacuuming process and chemical process after adding the material (heating the silicon material from room temperature to the melting point to melt the silicon material) also take a long time. Therefore, there is an urgent need for a device and method that can reduce the production time of crystalline silicon. Summary of the invention

[0003] In view of this, an embodiment of the present invention provides a silicon material feeding device and method, which can realize one-time large-scale feeding, shorten the crystalline silicon production time, and improve production efficiency.

[0004] To achieve the above object, according to one aspect of an embodiment of the present invention, there is provided a silicon material feeding device, comprising: a bearing structure including a hollow cavity, a silicon material storage bucket, a lifting structure and a docking structure;

[0005] The silicon material storage barrel is arranged in the hollow cavity of the bearing structure;

[0006] The silicon material storage barrel comprises a barrel and a baffle plate;

[0007] The cylinder is used to store silicon materials;

[0008] The baffle plate is movably connected to the bottom of the cylinder, and the baffle plate is connected to the lifting structure;

[0009] The lifting structure drives the baffle plate to change the relative relationship between the baffle plate and the bottom of the cylinder, so that the bottom of the cylinder switches between a sealed state and a non-sealed state;

[0010] The docking structure is arranged at the lower end of the bearing structure, and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, so as to put the silicon material stored in the cylinder into the single crystal furnace when the bottom of the cylinder is in an unsealed state.

[0011] To achieve the above object, according to another aspect of an embodiment of the present invention, a silicon material feeding method is provided, using any of the silicon material feeding devices described above, comprising:

[0012] Putting silicon material into the silicon material feeding device;

[0013] Connecting the silicon material feeding device to the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace;

[0014] The silicon material stored in the silicon material feeding device is put into the single crystal furnace.

[0015] One embodiment of the above invention has the following advantages or beneficial effects: material can be added by docking it with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the volume of the silicon material feeding device external to the single crystal furnace is not limited, and a large amount of material can be added at one time. There is no need to use a small-volume feeding barrel that needs to be added deep into the single crystal furnace. The problem of using a feeding barrel for feeding, which results in many feeding times and consumes a lot of manpower and time, is improved, the crystalline silicon production time is greatly shortened, and production efficiency is improved.

[0016] The further effects of the above-mentioned non-conventional optional manner will be described below in conjunction with the specific implementation manner. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are used to better understand the present invention and do not constitute an improper limitation of the present invention.

[0018] Figure 1 is a schematic diagram of a first structure of a silicon material feeding device according to an embodiment of the present invention;

[0019] Figure 2 is a second structural schematic diagram of a silicon material feeding device according to an embodiment of the present invention;

[0020] Figure 3 is a structural schematic diagram of a docking structure in an open state according to an embodiment of the present invention;

[0021] Figure 4 is a structural schematic diagram of a docking structure in a closed state according to an embodiment of the present invention;

[0022] Figure 5 is a schematic diagram of the docking structure according to an embodiment of the present invention and the sealing cover of the auxiliary chamber of a single crystal furnace;

[0023] Figure 6 is a schematic diagram of the docking structure according to an embodiment of the present invention and the sealing cover of the main chamber of a single crystal furnace;

[0024] Figure 7 is another structural schematic diagram of a docking structure in an open state according to an embodiment of the present invention;

[0025] Figure 8 is a schematic diagram of feeding silicon material into a single crystal furnace using a first silicon material feeding device according to an embodiment of the present invention;

[0026] Fig. 9 is a schematic diagram of feeding silicon material into a single crystal furnace using a second silicon material feeding device according to an embodiment of the present invention;

[0027] Fig.10 4 is a schematic flow chart of a silicon material adding method according to an embodiment of the present invention.

[0028] Reference numerals:

[0029] 1-bearing structure; 101-hollow cavity; 102-air inlet; 103-air outlet; 104-exhaust port; 2-silicon material storage barrel; 201-cylinder; 202-blocking plate; 3-lifting structure; 301-first fixing member; 302-lifting member; 4-docking structure; 401-docking flange; 402-docking baffle; 403-hinge; 5-gravity member; 6-sub-chamber; 7-main chamber; 8-limiting part; 9-retractable material guide barrel; 91-telescopic joint; 92-connecting part; 9021-second fixing member; 9022-connecting member; 10-storage barrel fixing part; 11-heating structure. DETAILED DESCRIPTION

[0030] The following is a description of exemplary embodiments of the present invention in conjunction with the accompanying drawings, including various details of the embodiments of the present invention to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present invention. Similarly, for clarity and conciseness, the description of well-known functions and structures is omitted in the following description.

[0031] It should be pointed out that the embodiments of the present invention and the technical features therein may be combined with each other without conflict.

[0032] Figure 1 1 is a schematic diagram of the first structure of a silicon material feeding device according to an embodiment of the present invention. Figure 2 2 is a schematic diagram of a second structure of a silicon material feeding device according to an embodiment of the present invention.

[0033] like Figure 1 and Figure 2 As shown, the silicon material feeding device according to the embodiment of the present invention mainly comprises: a bearing structure 1 including a hollow cavity 101 , a silicon material storage bucket 2 , a lifting structure 3 and a docking structure 4 .

[0034] The silicon material storage barrel 2 is arranged in the hollow cavity 101 of the supporting structure 1; the silicon material storage barrel 2 includes a cylinder 201 and a blocking plate 202; the cylinder 201 is used to store silicon materials; the blocking plate 202 is movably connected to the bottom of the cylinder 201, and the blocking plate 202 is connected to the lifting structure 3.

[0035] Optionally, the silicon material storage barrel 2 may be made of quartz, graphite, carbon-carbon or other materials, but is not limited thereto.

[0036] A cover (not shown) is provided on the top of the supporting structure 1. When the silicon material feeding device is used, the cover on the top of the supporting structure 1 is opened to feed silicon material into the silicon material storage barrel 2. After the silicon material is fed, the cover is closed to seal the silicon material feeding device.

[0037] The lifting structure 3 may include a first fixing member 301 and a lifting member 302; wherein the first fixing member 301 may be arranged on the cover body at the top of the bearing structure 1 or other positions of the bearing structure 1, and is used to control the extension and retraction of the lifting member 302; the lifting member 302 is a retractable connecting fixing part and the blocking plate 202. The lifting structure 3 drives the blocking plate 202 to change the relative relationship between the blocking plate 202 and the bottom of the cylinder 201, so that the bottom of the cylinder 201 switches between a sealed state and a non-sealed state.

[0038] Specifically, when silicon material is stored in the silicon material storage barrel 2, the baffle plate 202 is tightly connected to the bottom of the cylinder 201 so that the bottom of the cylinder 201 is in a sealed state; when the silicon material storage barrel 2 is used to feed the single crystal furnace, under the control of the first fixing member 301, the pulling member 302 drives the baffle plate 202 to move so that the baffle plate 202 is separated from the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from a sealed state to an unsealed state, and the silicon material can flow into the single crystal furnace from the bottom of the cylinder 201, thereby realizing the use of a silicon material feeding device to feed the single crystal furnace; after the feeding is completed, under the control of the first fixing member 301, the pulling member 302 drives the baffle plate 202 to move back to a position tightly connected to the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from an unsealed state to a sealed state.

[0039] Furthermore, in the process of adding materials to the single crystal furnace, the length of the lifting member 302 can be controlled to control the size of the gap between the blocking plate 202 and the bottom of the cylinder 201, thereby adjusting the outflow rate of the silicon material in the cylinder 201 to prevent a large amount of silicon material from falling in a short period of time and causing safety hazards.

[0040] Alternatively, if Figure 1 and Figure 2 As shown, a gravity member 5 may also be provided in the blocking plate 202 or the lifting structure 3. When the blocking plate 202 needs to be moved downward, the gravity member 5 can rely on its own gravity to pull the blocking plate 202 and the lifting member 302 downward to a desired position.

[0041] The gravity member 5 can be arranged in a variety of ways, such as being arranged on any surface of the blocking plate 202; being connected to the blocking plate 202 at one end and being connected to the lifting member 302 at the other end; being arranged at any position of the lifting member 302, etc. As an example, Figure 1 and Figure 2 , a possible arrangement of the gravity member 5 is shown, that is, the gravity member 5 is arranged so that one end is connected to the blocking plate 202 and the other end is connected to the lifting member 302 .

[0042] In addition, without providing a gravity member 5, a plate with a certain weight can be directly used as the blocking plate 202, so that when the blocking plate 202 needs to be moved downward, the lifting member 302 can be directly pulled downward to the desired position by the blocking plate 202's own gravity.

[0043] The above-mentioned bearing structure 1 and the silicon material storage barrel 2 set in the hollow cavity 101 can be in various shapes, including but not limited to rectangular, circular, U-shaped, etc. It can be understood that the volume of the bearing structure 1 and the volume of the silicon material storage barrel 2 are relatively large, so that one-time loading and feeding can be achieved through the silicon material feeding device, without being limited by the number of feeding times, which can greatly reduce the waste of human resources and time.

[0044] like Figure 1 and Figure 2 As shown, the docking structure 4 is disposed at the lower end of the supporting structure 1, and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, so that the silicon material stored in the cylinder 201 is put into the single crystal furnace when the bottom of the cylinder 201 is in an unsealed state. In addition, the docking structure 4 can also dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace through other intermediate devices, which are not limited here.

[0045] like Figure 5 As shown, the docking structure 4 can be docked with the auxiliary chamber sealing cover of the single crystal furnace; in addition, as Figure 6 As shown, before the silicon material feeding device is docked with the single crystal furnace, the auxiliary chamber 6 of the single crystal furnace can also be removed so that the docking structure 4 can be directly docked with the main chamber sealing cover of the single crystal furnace.

[0046] Furthermore, if Figure 3 and Figure 4 As shown, the docking structure 4 includes a docking flange 401 and a docking baffle 402 for sealing the bottom of the above-mentioned bearing structure 1. The docking baffle 402 is arranged in the middle of the above-mentioned docking flange 401, and has two states of opening and closing.

[0047] Alternatively, if Figure 3 and Figure 7 As shown, the docking structure 4 may further include a hinge 403, and the docking baffle 402 may be connected to the docking flange 401 via the hinge 403, and may be flipped via the hinge 403 to achieve switching between an open state and a closed state.

[0048] Before the silicon material feeding device is docked with the single crystal furnace, the docking baffle 402 may be in a closed state. Figure 5 or Figure 6 As shown, after the silicon material feeding device is docked with the single crystal furnace, the docking baffle 402 releases the seal on the bottom of the above-mentioned supporting structure 1 under the drive of an external driving force, that is, after the docking baffle 402 is switched from a closed state to an open state, the hollow cavity 101 of the above-mentioned supporting structure 1 is connected with the above-mentioned single crystal furnace, so that the silicon material feeding device can put the silicon material stored in the cylinder 201 into the single crystal furnace.

[0049] The docking baffle 402 may be connected to a device providing an external driving force by wired or wireless means, and the docking baffle 402 may be switched between an open state and a closed state by the driving of the external driving force.

[0050] Furthermore, if Figure 3 , Figure 4 and Figure 7 As shown, the docking stop 402 includes two matching docking doors.

[0051] It is understandable that the opening direction of the docking door when it is opened can be toward the inside of the bearing structure 1, and can also be toward the inside of the single crystal furnace. Figure 3 and Figure 7 , assuming that the upper surface of the docking flange 401 is the side facing the inside of the bearing structure 1, then Figure 3 In the embodiment, the opening direction of the docking door can be toward the inside of the bearing structure 1; Figure 7 In the embodiment, the opening direction of the docking door can be toward the inside of the single crystal furnace.

[0052] like Figure 3 and Figure 7 As shown, the contact positions of the two docking doors are provided with inclined surfaces inclined in the same direction. When the docking doors are closed, the inclined surfaces of the contact positions of the two docking doors are in close contact to ensure the airtightness of the hollow cavity 101; when the docking doors are opened, the two docking doors are opened successively to ensure that the opening and closing are not affected.

[0053] It should be noted that the structure of the docking baffle 402 is not limited to the structure including two matching docking doors, and other structures that can achieve electrical connection between the silicon material feeding device and the interior of the single crystal furnace may also be used.

[0054] Optionally, the docking structure 4 may further include a sealing ring. The sealing ring may be arranged around the outside of the docking flange 401 and protrude from the lower surface of the docking flange 401. The diameter of the docking flange 401 may be the same as the diameter of the main chamber sealing cover and / or the auxiliary chamber sealing cover of the single crystal furnace. After the docking structure 4 and the main chamber sealing cover of the single crystal furnace are docked, the sealing ring may surround the docking flange 401 and the main chamber sealing cover, so that after the docking baffle 402 is opened, the airtightness of the hollow cavity 101 and the inside of the single crystal furnace can be better ensured.

[0055] In an optional embodiment, if Figure 1 As shown, a limiting portion 8 is provided at the upper end of the outer wall of the silicon material storage barrel 2 .

[0056] The lifting structure 3 cooperates with the blocking plate 202 to limit the position of the cylinder 201 in the bearing structure 1; Figure 8 As shown, when the lifting structure 3 drives the baffle plate 202 downward, the cylinder 201 follows the baffle plate 202 to enter the single crystal furnace; after the limiting portion 8 reaches the bottom of the bearing structure 1, the limiting portion 8 is limited by the bottom of the bearing structure 1 to prevent the cylinder 201 from completely leaving the bearing structure 1; after the limiting portion 8 is limited by the bottom of the bearing structure 1, the lifting structure 3 drives the baffle plate 202 downward to make the bottom of the cylinder 201 in an unsealed state. The bottom of the cylinder 201 is located above the quartz crucible of the main chamber 7 of the single crystal furnace, and the silicon material stored in the cylinder 201 flows into the quartz crucible through the gap between the baffle plate 202 and the bottom of the cylinder 201, completing the silicon material feeding process.

[0057] When the silicon material stored in the cylinder 201 flows into the quartz crucible through the gap between the blocking plate 202 and the bottom of the cylinder 201, since the silicon material in the quartz crucible continues to increase, at this time, the quartz crucible can be controlled to move downward or the blocking plate 202 can be controlled to move upward until all the silicon material stored in the cylinder 201 is added to the quartz crucible, thereby improving the safety of the feeding process.

[0058] The diameter of the blocking plate 202 is larger than the diameter of the silicon material storage barrel 2 and smaller than the diameter of the bottom opening of the supporting structure 1. Specifically, the blocking plate 202 can be located below the cylinder 201. Under the traction of the lifting structure 3, the blocking plate 202 is subjected to an upward traction force. The diameter of the blocking plate 202 is larger than the diameter of the silicon material storage barrel 2, so that the blocking plate 202 supports the cylinder 201. After the silicon material feeding device and the single crystal furnace are docked, and the docking structure 4 releases the seal on the bottom of the supporting structure 1, the first fixing member 301 can control the extension of the lifting member 302. Under the drive of the lifting member 302, since the diameter of the blocking plate 202 is smaller than the diameter of the bottom opening of the supporting structure 1, the blocking plate 202 and the cylinder 201 can move downward through the supporting structure 1 and enter the single crystal furnace until the limiting portion 8 is limited by the bottom of the supporting structure 1, and the cylinder 201 stops moving downward.

[0059] Alternatively, if Figure 8 As shown, a limit portion 8 is provided on the upper end of the outer wall of the silicon material storage barrel 2. After the two docking doors are opened, the two docking doors limit the limit portion 8. In this case, the diameter of the blocking plate 202 should be smaller than the diameter of the docking door, so that the blocking plate 202 and the silicon material storage barrel 2 can pass through the docking door in the open state.

[0060] In an optional embodiment, if Figure 2 As shown, the silicon material feeding device may further include a retractable material introduction barrel 9. One end of the retractable material introduction barrel 9 is disposed at the bottom of the silicon material storage barrel 2; after the docking structure 4 is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the retractable material introduction barrel 9 may be extended into the single crystal furnace.

[0061] The telescopic guide barrel 9 includes multiple layers of nested telescopic joints 91 and connecting parts 92; the connecting parts 92 are connected to each of the telescopic joints 91, and the length of the connecting parts 92 drives the telescopic joints 91 to be extended or retracted. The diameter of each telescopic joint 91 of the multiple layers of nested telescopic joints 91 increases from the inside to the outside, and the telescopic joint 91 located inside can be nested in the outer telescopic joint 91 adjacent to it, and the connecting parts 92 can drive the inner telescopic joint 91 to extend from the outer telescopic joint 91 adjacent to it, and each telescopic joint 91 is a hollow sleeve. The number and length of the telescopic joints 91 can be set according to actual conditions.

[0062] Specifically, Fig. 9 As shown, after the docking structure 4 is docked with the sealing cover of the main chamber or the sealing cover of the auxiliary chamber of the single crystal furnace, the seal at the bottom of the bearing structure 1 is released, and the connection part 92 can be extended under the drive of external force, thereby driving the telescopic joint 91 to extend into the single crystal furnace. When the connection part 92 drives the innermost telescopic joint 91 to extend into the quartz crucible of the single crystal furnace, the connection part 92 stops extending, and the silicon material stored in the silicon material storage barrel 2 can flow into the quartz crucible through multiple extended telescopic joints 91; after the feeding is completed, the connection part 92 is driven to shorten by external force, thereby driving the telescopic joint 91 to retract into the bearing structure 1 and reset to the state before the feeding. Among them, the height of the discharge port of the telescopic joint 91 from the quartz crucible can be adjusted by controlling the length of the connection part 92 to prevent sputtering when the silicon material falls into the quartz crucible.

[0063] Alternatively, if Figure 2 As shown, the connecting part 92 may further include a second fixing member 9021 and a connecting member 9022. For each telescopic joint 91, the second fixing member 9021 is disposed at the lower opening of the telescopic joint 91, and the lower opening of the telescopic joint 91 may be concave inward to form an inclined surface, so that the second fixing member 9021 having a diameter smaller than the diameter of the telescopic joint 91 but larger than the opening diameter of the telescopic joint 91 is disposed on the inclined surface of the lower opening of the telescopic joint 91, and the downward movement trend of the telescopic joint 91 due to its own gravity may be prevented by the second fixing member 9021. The connecting member 9022 is connected to the second fixing member 9021, and controls the up and down movement of the second fixing member 9021 by its own telescopic movement, thereby driving the telescopic joint 91 to telescope.

[0064] Furthermore, an umbrella-shaped discharge port may be provided at the lower end of the innermost expansion joint 91 of the retractable material introduction barrel 9 to prevent the silicon material from sputtering around during the feeding process. The umbrella-shaped discharge port may be made of high temperature resistant material, such as quartz.

[0065] like Figure 2 As shown, for the structure that the silicon material feeding device includes the retractable material introduction cylinder 9, the silicon material feeding device may further include a storage barrel fixing portion 10. The cylinder 201 is fixed to the supporting structure 1 through the storage barrel fixing portion 10.

[0066] In this case, the silicon material stored in the cylinder 201 can flow into the quartz crucible of the single crystal furnace through the retractable material guide cylinder 9. Therefore, the silicon material storage barrel 2 inside the supporting structure 1 does not need to move up and down. In order to ensure the stability of the structure, the silicon material storage barrel 2 can be fixed to the supporting structure 1 through the storage barrel fixing part 10 so that the silicon material storage barrel 2 will not change its position relative to the supporting structure 1.

[0067] In addition, the silicon material feeding device includes a retractable material introduction cylinder 9, and the bottom of the silicon material storage barrel 2 is a necked structure; the baffle plate 202 is arranged in the silicon material storage barrel 2; the necked structure cooperates with the baffle plate 202 to seal the bottom of the silicon material storage barrel 2.

[0068] The bottom of the silicon material storage barrel 2 is a necking structure, and the diameter of the baffle plate 202 should be smaller than the maximum diameter of the cylinder 201 and larger than the diameter of the necking structure at the bottom of the cylinder 201, so that the baffle plate 202 can move up and down inside the cylinder 201. When the baffle plate 202 moves down to the necking structure, since the diameter of the necking structure is smaller than the diameter of the baffle plate 202, the necking structure prevents the baffle plate 202 from moving further downward, so that the two cooperate with each other to seal the bottom of the silicon material storage barrel 2.

[0069] Specifically, when silicon material is added to the silicon material feeding device, the blocking plate 202 cooperates with the constriction structure at the bottom of the cylinder 201 to seal the bottom of the silicon material storage barrel 2, and limit the silicon material added to the cylinder 201 to prevent the silicon material from flowing to the bottom of the supporting structure 1; when the silicon material is added to the single crystal furnace through the silicon material feeding device, the docking structure 4 is opened, and the retractable material introduction cylinder 9 is extended to the top of the quartz crucible of the single crystal furnace. Under the control of the first fixing member 301, the pulling member 302 is shortened and drives the blocking plate 202 to move upward, so that the blocking plate 202 is The plate 202 is separated from the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from a sealed state to an unsealed state. The silicon material can flow into the single crystal furnace from the gap between the bottom of the cylinder 201 and the blocking plate 202 via the retractable material introduction tube 9, thereby realizing the use of a silicon material feeding device to feed the single crystal furnace. After the feeding is completed, under the control of the first fixing member 301, the pulling member 302 extends and drives the blocking plate 202 to move down again to a position tightly connected to the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from an unsealed state to a sealed state.

[0070] It should be noted that the structure for adding the silicon material in the silicon material storage barrel 2 into the quartz crucible of the single crystal furnace is not limited to the structures of the above two embodiments. Any structure that can realize the addition of the silicon material in the silicon material storage barrel 2 into the quartz crucible of the single crystal furnace can be set, such as setting a feeding tube with a piston at the bottom of the cylinder 201.

[0071] In an optional embodiment, if Figure 1 and Figure 2 As shown, the silicon material feeding device may further include: a heating structure 11 disposed in the above-mentioned supporting structure 1. The above-mentioned heating structure 11 is disposed around the above-mentioned silicon material storage barrel 2, and is used to heat the silicon material in the above-mentioned silicon material storage barrel 2.

[0072] The heating structure 11 may be a resistance heater, a capacitance heater, a radiation heater, a microwave heater, an infrared heater, etc., but is not limited thereto.

[0073] In the case where the silicon material heating device is provided with a heating structure 11, silicon material at room temperature can be fed into the silicon material feeding device, and the silicon material in the silicon material storage barrel 2 can be preheated by the heating structure 11 in the silicon material feeding device. Then, the preheated silicon material can be fed into the single crystal furnace, so that in the material melting process, the temperature of the single crystal furnace can be kept at the melting point of the silicon material, and there is no need to go through the process of heating the silicon material from room temperature to the melting point temperature, which greatly shortens the time of using the single crystal furnace for melting.

[0074] It is understandable that the preheating method of silicon material is not limited to the method of setting a heat-releasing structure in the silicon material feeding device, and any method that can achieve preheating of silicon material outside the single crystal furnace can be used. For example, when the heating structure 11 is not set in the silicon material feeding device, the preheated silicon material can be directly put into the silicon material feeding device, and the silicon material is fed into the single crystal furnace through the silicon material feeding device.

[0075] The melting point of silicon material is 1410℃-1420℃. Generally, when melting the material, the silicon material at room temperature needs to be heated to 1420℃ to ensure that the silicon material is completely melted. In the process of heating the silicon material at room temperature to 1420℃, the heat of heating per unit mass of silicon material is equal to the specific heat capacity × temperature difference, that is, 0.710kJ / (kg·K)×1420K×1kg=994kJ, and the melting heat is equal to the mass × melting heat, that is, 1810kJ / kg×1kg=1810kJ. Since it is difficult to shorten the melting time of silicon material in the single crystal furnace, the silicon material can be preheated outside the single crystal furnace, and the temperature of the silicon material can be raised to a temperature lower than the melting point of the silicon material. The preheated silicon material is then put into the single crystal furnace for melting, thereby shortening the time for the silicon material to heat up in the single crystal furnace, and then shortening the total melting time of the single crystal furnace.

[0076] The embodiment of the present invention sets a heating structure 11 in the hollow cavity 101 of the supporting structure 1, or directly puts preheated silicon material into the silicon material feeding device, so that the silicon material can be preheated before being fed into the single crystal furnace, and then the preheated silicon material is directly added to the single crystal furnace. The single crystal furnace can be kept at a temperature that can melt the silicon material without repeated heating and cooling, which greatly shortens the preparation time of crystalline silicon, reduces the baking time of the quartz crucible in the single crystal furnace, reduces the oxygen released when the quartz crucible is melted, thereby reducing the oxygen content in the silicon molten liquid, further reducing the oxygen content in the crystalline silicon rod product, and also prolonging the life of the quartz crucible.

[0077] In an optional embodiment, the hollow cavity 101 may be filled with a heat-insulating material to achieve heat insulation of the silicon material in the cylinder 201 .

[0078] In an optional embodiment, the bearing structure 1 may be provided with an air inlet 102 , an air outlet 103 and / or an air extraction port 104 . The air inlet 102 , the air outlet 103 or the air extraction port 104 may be provided at any position of the bearing structure 1 .

[0079] Furthermore, the air inlet 102 , the air outlet 103 and the air extraction port 104 may be the same hole or the same opening disposed on the supporting structure 1 .

[0080] The following describes in detail the use of the air inlet 102, the air outlet 103 and / or the air extraction port 104 when adding silicon material using silicon material adding devices of different structures or different silicon material adding processes through several examples:

[0081] The first method is to use a silicon material feeding device provided with a heating structure 11 to feed the single crystal furnace. In the silicon material feeding device, a gas extraction port 104 and a gas inlet 102 are provided on the supporting structure 1, and a gas outlet 103 may or may not be provided. When the silicon material feeding device is used, the silicon material to be preheated is firstly put into the silicon material feeding device, and the silicon material feeding device is vacuumed through the gas extraction port 104 to preheat the silicon material under a low vacuum state. After preheating is completed, the docking structure 4 of the silicon material feeding device is docked with the main chamber sealing cover of the single crystal furnace, and argon gas is filled into the silicon material heating device through the air inlet 102 to make the atmosphere in the silicon material heating device the same as that in the single crystal furnace, and the air pressure in the silicon material heating device is adjusted through the air extraction port 104 to make the air pressure in the silicon material heating device the same or similar to that in the single crystal furnace, and then, the docking structure 4 is opened to add the preheated silicon material in the cylinder 201 into the quartz crucible of the single crystal furnace. After the feeding is completed, the docking structure 4 is closed, the argon gas is recovered through the air outlet 103 or the air extraction port 104, and the air inlet 102 is opened to make the air pressure in the silicon material heating device the same as the external air pressure, so as to facilitate the subsequent opening of the cover on the top of the supporting structure 1.

[0082] The second method is to use a silicon material feeding device without a heating structure 11 to feed the single crystal furnace. In the silicon material feeding device, an air inlet 102 is provided on the supporting structure 1. The preheated silicon material is put into the silicon material feeding device. The docking structure 4 is docked with the auxiliary chamber sealing cover of the single crystal furnace, the main chamber sealing cover is kept closed, the docking structure 4 and the auxiliary chamber sealing cover are opened, and the air pressure in the auxiliary chamber 6 and the silicon material feeding device is adjusted by vacuuming connected to the auxiliary chamber 6, so that the air pressure in the silicon material heating device is the same or similar to the air pressure in the single crystal furnace, and then the main chamber sealing cover is opened, and the preheated silicon material stored in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the feeding is completed, the main chamber sealing cover and the auxiliary chamber sealing cover are closed, and the air inlet 102 is opened to make the air pressure in the silicon material heating device the same as the external air pressure, so as to facilitate the subsequent opening of the cover body on the top of the supporting structure 1.

[0083] The third method is to use a silicon material feeding device provided with a heating structure 11 to feed the single crystal furnace. In the silicon material feeding device, an exhaust hole and an air inlet 102 are provided on the supporting structure 1. First, the silicon material to be preheated is put into the silicon material feeding device, and the silicon material to be preheated is preheated under normal pressure. Then, the docking structure 4 is docked with the main chamber sealing cover of the single crystal furnace. The air pressure in the sub-chamber 6 and the silicon material feeding device is adjusted through the exhaust port 104 so that the air pressure in the silicon material heating device is the same or similar to the air pressure in the single crystal furnace. The main chamber sealing cover is opened, and the preheated silicon material in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the feeding is completed, the main chamber sealing cover is closed, and the air inlet 102 is opened to make the air pressure in the silicon material heating device the same as the external air pressure, so as to facilitate the subsequent opening of the cover on the top of the supporting structure 1.

[0084] The fourth method is to use a silicon material feeding device without a heating structure 11 to feed the single crystal furnace. In the silicon material feeding device, an air inlet 102, an air outlet 103 and an air extraction port 104 are provided on the supporting structure 1. The silicon material to be preheated is put into the silicon material feeding device, and high-temperature argon gas is introduced into the inside of the supporting structure 1 through the air inlet 102. The high-temperature argon gas heats the silicon material in the cylinder 201 and then flows out through the air outlet 103. After preheating, the air pressure in the silicon material heating device is adjusted through the air extraction port 104 so that the air pressure in the silicon material heating device is the same as or similar to the air pressure in the single crystal furnace. Then, the docking structure 4 is opened, and the preheated silicon material in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the feeding is completed, the docking structure 4 is closed, the argon gas is recovered through the gas outlet 103 or the gas extraction port 104, and the gas inlet 102 is opened to make the gas pressure in the silicon material heating device the same as the external gas pressure, so as to facilitate the subsequent opening of the cover on the top of the supporting structure 1.

[0085] By arranging an exhaust port 104 on the supporting structure 1, the air pressure in the silicon material feeding device can be adjusted so that the air pressure in the silicon material feeding device is the same as or close to the air pressure in the single crystal furnace, which facilitates the opening of the docking structure 4 and avoids affecting the air pressure in the single crystal furnace. After the feeding is completed, there is no need to readjust the air pressure in the single crystal furnace.

[0086] By providing the air inlet 102 on the bearing structure 1, the atmosphere in the silicon material feeding device can be adjusted so that the atmosphere in the silicon material feeding device is the same as the atmosphere in the single crystal furnace, thereby avoiding the introduction of other gases into the single crystal furnace. At the same time, after the feeding is completed, the air pressure in the silicon material feeding device can be made the same as the decompression of the outside world, so as to facilitate opening the top cover of the bearing structure 1.

[0087] By arranging the gas outlet 103 on the bearing structure 1, the inert gas in the silicon material feeding device can be recovered, so that the inert gas can be recycled and the waste is avoided.

[0088] It should be noted that the above examples are only for illustration and do not constitute a limitation on the use process of the silicon material feeding device of the present invention, and the use of the silicon material feeding device to feed the single crystal furnace is not limited to the above examples. When adjusting the internal atmosphere of the silicon material feeding device, the internal atmosphere is not limited to argon atmosphere, and any inert gas atmosphere can be used. Preferably, the internal atmosphere of the silicon material feeding device can use the same gas as the internal atmosphere of the single crystal furnace.

[0089] According to the silicon material feeding device of the embodiment of the present invention, feeding is performed by docking it with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace. The volume of the silicon material feeding device externally placed in the single crystal furnace is not limited, and a large amount of feeding can be achieved at one time. There is no need to use a small-volume feeding barrel that needs to be deeply inserted into the single crystal furnace for feeding. This improves the problem of using a feeding barrel for feeding, which results in a large number of feeding times and a large amount of manpower and time consumption, greatly shortens the crystalline silicon production time, and improves production efficiency.

[0090] By arranging a heating structure 11 in the silicon material feeding device or directly feeding the preheated silicon material into the silicon material feeding device, the time for the single crystal furnace to melt the material can be effectively shortened and the production efficiency can be improved. At the same time, by preheating the silicon material, the surface of the granular silicon can be removed, and the silicon jumping phenomenon during the melting period can be reduced. At the same time, the time for the quartz crucible in the single crystal furnace to be baked at high temperature is shortened, the service life of the quartz crucible is increased, and the oxygen released during the melting of the quartz crucible is reduced, thereby reducing the oxygen content in the silicon melt and improving the quality of the crystalline silicon product.

[0091] Fig.10 Schematic diagram of the process of adding silicon material according to an embodiment of the present invention. Fig.10 As shown, the silicon material feeding method of the embodiment of the present invention adopts any of the silicon material feeding devices as described above to feed the silicon material, and includes the following steps A1 to A3:

[0092] Step A1, feeding silicon material into the silicon material feeding device;

[0093] Step A2, docking the silicon material feeding device with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace;

[0094] Step A3, adding the silicon material stored in the silicon material feeding device into the single crystal furnace.

[0095] Specifically, all silicon materials required for the single crystal furnace to prepare crystalline silicon in a single time are put into the silicon material storage barrel 2 of the silicon material feeding device. At this time, there is no gap between the blocking plate 202 and the bottom of the cylinder 201 of the silicon material storage barrel 2, and the bottom of the cylinder 201 is in a sealed state. The docking structure 4 at the lower end of the supporting structure 1 is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace. Under the driving force of the external driving force, the contact docking baffle 402 seals the bottom of the supporting structure 1, and the lifting structure 3 drives the blocking plate 202 to change the relative relationship between the blocking plate 202 and the bottom of the cylinder 201, so that a gap appears between the blocking plate 202 and the bottom of the cylinder 201, and the silicon material stored in the cylinder 201 flows into the quartz crucible of the single crystal furnace through the gap.

[0096] In an optional embodiment of the present invention, after the silicon material feeding device is docked with the main chamber sealing cover or the sub-chamber sealing cover of the single crystal furnace, the method further includes: adjusting the air pressure in the silicon material feeding device so that the air pressure in the silicon material feeding device is the same as the air pressure in the single crystal furnace.

[0097] As an example, after the docking structure 4 is initially docked with the main chamber sealing cover of the single crystal furnace, the docking structure 4 is kept closed first, and the air pressure in the silicon material feeding device is adjusted through the exhaust port 104 set in the supporting structure 1 so that the air pressure in the above-mentioned silicon material feeding device is the same as the air pressure in the above-mentioned single crystal furnace, and then the docking structure 4 is opened.

[0098] As another example, after the docking structure 4 is preliminarily docked with the auxiliary chamber sealing cover of the single crystal furnace, the docking structure 4 is opened, and the air pressure in the silicon material feeding device is adjusted by a vacuum pump connected to the auxiliary chamber 6 so that the air pressure in the above-mentioned silicon material feeding device is the same as the air pressure in the above-mentioned single crystal furnace, and then the main chamber sealing cover is opened.

[0099] By adjusting the air pressure in the silicon material feeding device, the problem of the docking structure 4 being difficult to open due to different air pressures on both sides of the docking structure 4 is avoided. At the same time, the process of readjusting the air pressure in the single crystal furnace after feeding is reduced, the crystalline silicon preparation time is shortened, and the production efficiency is improved.

[0100] In an optional embodiment of the present invention, after the silicon material is fed into the silicon material feeding device, the method further comprises: preheating the fed silicon material by the silicon material feeding device.

[0101] When the heating structure 11 is provided in the silicon material feeding device, silicon material at room temperature can be fed into the silicon material feeding device, preheated by the heating structure 11, and then fed into the single crystal furnace after the preheating, which can effectively shorten the melting time of the single crystal furnace and improve production efficiency. At the same time, by preheating the silicon material, the surface of the granular silicon can be removed, and the silicon jumping phenomenon during melting can be reduced. At the same time, the high-temperature baking time of the quartz crucible in the single crystal furnace is shortened, the service life of the quartz crucible is increased, and the oxygen released during the melting of the quartz crucible is reduced, thereby reducing the oxygen content in the silicon melt and improving the quality of the crystalline silicon product.

[0102] In addition, even if the heating structure 11 is not provided in the silicon material feeding device, the silicon material at room temperature can be preheated by filling the silicon material feeding device with high-temperature inert gas, or the preheated silicon material can be directly added to the silicon material feeding device.

[0103] The silicon material may be heated to 80-1400° C. to achieve preheating of the silicon material. Preferably, the silicon material may be heated to 300-700° C. to achieve preheating of the silicon material. As an example, the silicon material may be heated to 80° C., 300° C., 500° C., 700° C., 1000° C. or 1400° C., etc.

[0104] According to the silicon material feeding method of the embodiment of the present invention, silicon material can be added to the single crystal furnace through a silicon material feeding device. Since the volume of the silicon material feeding device is not limited, a large amount of material can be added at one time. There is no need to use a small-volume feeding barrel that needs to go deep into the single crystal furnace for feeding. This improves the problem of using a feeding barrel to feed material, which leads to a large number of feeding times and consumes a lot of manpower and time. It greatly shortens the crystalline silicon production time and improves production efficiency.

[0105] In summary, the embodiments of the present invention provide the following technical solutions:

[0106] Technical Solution 1, a silicon material feeding device, comprising: a bearing structure 1 including a hollow cavity 101, a silicon material storage bucket 2, a lifting structure 3 and a docking structure 4;

[0107] The silicon material storage barrel 2 is disposed in the hollow cavity 101 of the supporting structure 1;

[0108] The silicon material storage barrel 2 includes a barrel 201 and a baffle plate 202;

[0109] The cylinder 201 is used to store silicon materials;

[0110] The blocking plate 202 is movably connected to the bottom of the cylinder 201, and the blocking plate 202 is connected to the lifting structure 3;

[0111] The lifting structure 3 drives the blocking plate 202 to change the relative relationship between the blocking plate 202 and the bottom of the cylinder 201, so that the bottom of the cylinder 201 switches between a sealed state and a non-sealed state;

[0112] The docking structure 4 is arranged at the lower end of the supporting structure 1, and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, so that the silicon material stored in the cylinder 201 can be put into the single crystal furnace when the bottom of the cylinder 201 is in a non-sealed state.

[0113] Technical solution 2: The silicon material feeding device according to technical solution 1,

[0114] The upper end of the outer wall of the silicon material storage barrel 2 is provided with a limiting portion 8;

[0115] The lifting structure 3 cooperates with the blocking plate 202 to limit the position of the cylinder 201 in the bearing structure 1;

[0116] When the lifting structure 3 drives the baffle plate 202 downward, the cylinder 201 follows the baffle plate 202 and enters the single crystal furnace;

[0117] After the limiting portion 8 reaches the bottom of the bearing structure 1, the limiting portion 8 is limited by the bottom of the bearing structure 1 to prevent the cylinder 201 from completely separating from the bearing structure 1;

[0118] After the limiting portion 8 is limited by the bottom of the bearing structure 1 , the lifting structure 3 drives the blocking plate 202 downward, so that the bottom of the cylinder 201 is in a non-sealed state.

[0119] Technical solution 3: The silicon material feeding device according to technical solution 2,

[0120] The diameter of the blocking plate 202 is larger than the diameter of the silicon material storage barrel 2 and smaller than the diameter of the bottom opening of the supporting structure 1;

[0121] The blocking plate 202 supports the cylinder 201 .

[0122] Technical solution 4: The silicon material feeding device according to technical solution 1 further comprises: a retractable material introduction cylinder 9, wherein:

[0123] One end of the retractable material guide cylinder 9 is arranged at the bottom of the silicon material storage barrel 2;

[0124] After the docking structure 4 is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the retractable material guiding cylinder 9 can be extended into the single crystal furnace.

[0125] Technical solution 5: The silicon material feeding device according to technical solution 4,

[0126] The telescopic guide barrel 9 includes multiple layers of nested telescopic joints 91 and connecting parts 92;

[0127] The connecting portion 92 is connected to each of the telescopic joints 91 , and the telescopic joints 91 are extended or retracted by the length of the connecting portion 92 .

[0128] Technical solution 6: The silicon material feeding device according to technical solution 5,

[0129] An umbrella-shaped material discharge port is provided at the lower end of the innermost telescopic section 91 of the telescopic material introducing cylinder 9.

[0130] Technical solution 7: A silicon material feeding device according to any one of technical solutions 1 to 6,

[0131] The docking structure 4 includes a docking flange 401 and a docking baffle 402 for sealing the bottom of the bearing structure 1;

[0132] After the docking baffle 402 releases the seal on the bottom of the supporting structure 1 under the driving force of the external driving force, the hollow cavity 101 of the supporting structure 1 is connected with the single crystal furnace.

[0133] Technical solution 8: According to the silicon material feeding device described in technical solution 7, the docking baffle 402 includes two matching docking doors;

[0134] A limiting portion 8 is provided at the upper end of the outer wall of the silicon material storage barrel 2 . After the two docking doors are opened, the two docking doors limit the limiting portion 8 .

[0135] Technical solution 9: The silicon material feeding device according to any one of technical solutions 4-6 further comprises: a storage barrel fixing part 10;

[0136] The cylinder 201 is fixed to the supporting structure 1 through the storage bucket fixing portion 10 .

[0137] Technical solution 10: A silicon material feeding device according to any one of technical solutions 4 to 6,

[0138] The bottom of the silicon material storage barrel 2 is a constricted structure;

[0139] The baffle plate 202 is disposed in the silicon material storage barrel 2;

[0140] The necking structure cooperates with the blocking plate 202 to seal the bottom of the silicon material storage barrel 2 .

[0141] Technical solution 11, according to the silicon material feeding device described in technical solution 1,

[0142] The bearing structure 1 is provided with an air inlet hole 102;

[0143] and / or,

[0144] The bearing structure 1 is provided with an air outlet 103 .

[0145] Technical solution 12: The silicon material feeding device according to any one of technical solutions 1 to 6 further comprises: a heating structure 11 disposed in the supporting structure 1, wherein:

[0146] The heating structure 11 is disposed around the silicon material storage barrel 2 and is used for heating the silicon material in the silicon material storage barrel 2 .

[0147] Technical solution 13, a method for adding silicon material, using the silicon material adding device as described in any one of technical solutions 1-12 to add material, comprising:

[0148] Putting silicon material into the silicon material feeding device;

[0149] The silicon material feeding device is connected to the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace;

[0150] The silicon material stored in the silicon material feeding device is fed into the single crystal furnace.

[0151] Technical solution 14. According to the silicon material feeding method described in technical solution 13, after docking the silicon material feeding device with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the method further includes:

[0152] The gas pressure in the silicon material feeding device is adjusted so that the gas pressure in the silicon material feeding device is the same as the gas pressure in the single crystal furnace.

[0153] Technical solution 15. According to any one of technical solutions 13-14, the silicon material feeding method further comprises:

[0154] The silicon material feeding device is used to preheat the silicon material fed into the device.

[0155] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may occur depending on design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A silicon material feeding device, characterized in that: include: A bearing structure (1) comprising a hollow cavity (101), a silicon material storage bucket (2), a lifting structure (3) and a docking structure (4); The silicon material storage barrel (2) is arranged in the hollow cavity (101) of the supporting structure (1); The silicon material storage barrel (2) comprises a barrel (201) and a baffle plate (202); The cylinder (201) is used to store silicon material; The blocking plate (202) is movably connected to the bottom of the cylinder (201), and the blocking plate (202) is connected to the lifting structure (3); The lifting structure (3) drives the blocking plate (202) to change the relative relationship between the blocking plate (202) and the bottom of the cylinder (201), so that the bottom of the cylinder (201) switches between a sealed state and a non-sealed state; The docking structure (4) is arranged at the lower end of the bearing structure (1) and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace so as to put the silicon material stored in the cylinder (201) into the single crystal furnace when the bottom of the cylinder (201) is in a non-sealed state.

2. The silicon material feeding device according to claim 1, characterized in that: A limiting portion (8) is provided at the upper end of the outer wall of the silicon material storage barrel (2); The lifting structure (3) cooperates with the blocking plate (202) to limit the position of the cylinder (201) in the bearing structure (1); When the lifting structure (3) drives the baffle plate (202) downward, the cylinder (201) follows the baffle plate (202) and enters the single crystal furnace; After the limiting portion (8) reaches the bottom of the bearing structure (1), the limiting portion (8) is limited by the bottom of the bearing structure (1) to prevent the cylinder (201) from completely separating from the bearing structure (1); After the limiting portion (8) is limited by the bottom of the bearing structure (1), the lifting structure (3) drives the blocking plate (202) downward, so that the bottom of the cylinder (201) is in a non-sealed state.

3. The silicon material feeding device according to claim 2, characterized in that: The diameter of the blocking plate (202) is larger than the diameter of the silicon material storage barrel (2), and smaller than the diameter of the bottom opening of the supporting structure (1); The baffle plate (202) supports the cylinder (201).

4. The silicon material feeding device according to claim 1, characterized in that: Also includes: A retractable material introduction cylinder (9), wherein: One end of the retractable material guiding cylinder (9) is arranged at the bottom of the silicon material storage barrel (2); After the docking structure (4) is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the retractable material introduction cylinder (9) can be extended into the single crystal furnace.

5. The silicon material feeding device according to claim 4, characterized in that: The telescopic material introduction cylinder (9) comprises multiple layers of nested telescopic joints (91) and connecting parts (92); The connecting portion (92) is connected to each of the telescopic joints (91), and the telescopic joints (91) are extended or retracted by the length of the connecting portion (92).

6. The silicon material feeding device according to claim 5, characterized in that: The lower end of the innermost telescopic section (91) of the telescopic material introducing cylinder (9) is provided with an umbrella-shaped material discharge port.

7. The silicon material feeding device according to any one of claims 1 to 6, characterized in that: The docking structure (4) comprises a docking flange (401) and a docking baffle (402) for sealing the bottom of the bearing structure (1); After the docking baffle (402) is driven by an external driving force to release the seal on the bottom of the supporting structure (1), the hollow cavity (101) of the supporting structure (1) is connected to the single crystal furnace.

8. The silicon material feeding device according to claim 7, characterized in that: The docking baffle 402 includes two matching docking doors; A limiting portion (8) is provided at the upper end of the outer wall of the silicon material storage barrel (2). After the two docking doors are opened, the two docking doors limit the limiting portion (8).

9. The silicon material feeding device according to any one of claims 4 to 6, characterized in that: Also includes: Storage barrel fixing portion (10); The cylinder (201) is fixed to the bearing structure (1) via the storage barrel fixing portion (10).

10. A method for adding silicon material, characterized in that: The silicon material feeding device according to any one of claims 1 to 9 is used for feeding, comprising: Putting silicon material into the silicon material feeding device; The silicon material feeding device is connected to the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace; The silicon material stored in the silicon material feeding device is fed into the single crystal furnace.

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