Current detection chip

Abstract

The invention discloses a current detection chip, and relates to the field of current sensing technology, the current detection chip comprises a magnetic sensitive unit, a data signal function module and a power supply module, the power supply module is electrically connected with the data signal function module, and the power supply module is used for supplying power to the data signal function module and the magnetic sensitive unit; the data signal function module comprises a microprocessor unit, a storage unit, an anomaly detection unit, an A / D conversion unit and a serial port communication unit. The storage unit, the anomaly detection unit, the A / D conversion unit and the serial port communication unit are connected to the microprocessor unit. The processor unit obtains detected current signal data according to the detection signal output by the magnetic sensing unit; the abnormity detection unit is used for monitoring state parameters of the current detection chip, and the microprocessor unit reports fault information through the serial port communication unit. The self-diagnosis of the current detection chip can be realized, and the fault of the current detection chip can be conveniently and timely checked.

Description

Technical Field

[0001] The present invention relates to the field of current sensing technology, and in particular to a current detection chip. Background Art

[0002] As an important component of inverter, BMS and other systems, how to improve the reliability of current detection chips, how to reduce the cost of current detection and how to improve production efficiency are important research directions for high-performance current detection solutions.

[0003] In the existing current detection scheme, the current of the object to be measured is usually detected through a chip integrated with a Hall element. The Hall element generates a Hall electrical signal according to the current change of the object to be measured. The electrical signal is amplified and adjusted by the circuit in the detection chip and output to the controller. In traditional current detection chips, the fault of the current detection chip can only be detected through the detection end, that is, the current detection chip can only be detected during maintenance and troubleshooting. Usually, the fault of the current detection chip can only be identified after the system fault is caused. There is a delay in fault detection, which has a relatively large impact on the operation of the current detection chip. In addition, the troubleshooting operation is complicated and the labor cost is high. Summary of the invention

[0004] In order to solve the defects of the current detection chip in the prior art that the fault detection depends on external detection and the fault detection is difficult, the present invention provides a current detection chip, which can realize self-diagnosis of the current detection chip and facilitate timely troubleshooting of the current detection chip.

[0005] The above technical objectives of the present invention are achieved through the following technical solutions: The present invention provides a current detection chip, the current detection chip comprising: A magnetic sensitive unit, used to output a detection signal according to the change of the magnetic field generated by the measured current signal; Data signal function module; A power module, the power module is electrically connected to the data signal function module, and the power module is used to supply power to the data signal function module and the magnetic sensitive unit; The data signal function module includes a microprocessor unit, a storage unit, an abnormality detection unit, an A / D conversion unit and a serial communication unit, wherein the storage unit, the abnormality detection unit, the A / D conversion unit and the serial communication unit are connected to the microprocessor unit; The A / D conversion unit is electrically connected to the magnetic sensitive unit, and is used to convert the detection signal output by the magnetic sensitive unit into a digital signal and transmit it to the microprocessor unit. The processor unit obtains the measured current signal data according to the detection signal output by the magnetic sensitive unit, and the microprocessor unit exchanges data with the outside world through the serial communication unit. The abnormality detection unit is used to monitor the state parameters of the current detection chip and transmit the state parameters to the microprocessor unit. When the state parameters exceed a preset value, the microprocessor unit reports fault information through the serial communication unit.

[0006] Furthermore, the preset value includes a voltage preset threshold, a magnetic saturation preset threshold, a power supply fluctuation amplitude threshold and an output signal preset threshold stored in the storage unit; the abnormality detection unit reads the power supply voltage signal output by the power module, the detection signal output by the magnetic sensitive unit, the power supply voltage fluctuation amplitude and the output signal of the serial communication unit at a set time interval.

[0007] Further, when the power supply voltage signal exceeds the preset voltage threshold, and / or the detection signal output by the magnetic sensitive unit exceeds the preset magnetic saturation threshold, and / or the power supply voltage fluctuation amplitude is greater than the power supply fluctuation amplitude threshold, and / or the output signal of the serial communication unit exceeds the output signal preset threshold, the microprocessor unit determines that the current detection chip is in a fault state and reports the fault information.

[0008] Furthermore, the data signal function module also includes a self-start recovery unit, which is electrically connected to the microprocessor unit and is used to control the self-start recovery of the microprocessor unit.

[0009] Furthermore, the self-recovery unit includes a fault counter and a fault timer, the microprocessor unit is electrically connected to the fault counter and the fault timer, the fault counter is used to record the number of times the fault state occurs, and the fault timer is used to record the duration of each fault state; when the number of times the fault state occurs is greater than the set number of times or the duration of each fault state is greater than the set duration, the self-recovery unit sends a reset signal to the microprocessor unit, and the microprocessor unit restarts.

[0010] Furthermore, the data signal function module further includes a self-test unit, and the self-test unit is used to test the current detection chip before startup.

[0011] Furthermore, the current detection chip also includes a temperature measurement unit, which is electrically connected to the microprocessor unit and is used to monitor the real-time junction temperature of the current detection chip.

[0012] Furthermore, the magnetic sensitive unit includes a Hall disk, and the storage unit stores Hall coefficients at different temperatures; the microprocessor unit reads the corresponding Hall coefficient in the storage unit according to the temperature measured by the current temperature measuring unit, and compensates the detection signal output by the magnetic sensitive unit.

[0013] Furthermore, the current detection chip also includes a humidity sensitive unit, the humidity sensitive unit is electrically connected to the microprocessor unit, and the humidity sensitive unit is used to detect environmental humidity.

[0014] Furthermore, the power module includes a power conversion unit and a reference voltage unit, the power conversion unit is used to convert the external power into the power signal required inside the current detection chip, and the reference voltage unit is used to provide a reference voltage for the current detection chip.

[0015] In summary, the present invention has the following beneficial effects: 1. In the present invention, the magnetic sensitive unit outputs a detection signal according to the magnetic field generated by the measured current signal, which is converted into a digital signal by the A / D conversion unit and then transmitted to the microprocessor unit. The microprocessor unit can obtain the value of the measured current signal according to the detection signal, and output it to the external system end through the serial communication unit to realize the detection of the current signal. Among them, the current detection chip monitors the state parameters of the current detection chip through the abnormal detection unit, and the microprocessor unit compares the state parameters detected by the abnormal detection unit with the preset value, so as to know whether the current detection chip is in a fault state, and report the fault information when the current detection chip is in a fault state, so that the user knows the fault state, so that the current detection chip can be detected in real time when it is used, without relying on external detection means, with small fault troubleshooting delay, small fault impact, simple operation and low cost.

[0016] 2. The abnormality detection unit reads the power supply voltage signal output by the power supply module, the detection signal output by the magnetic sensitive unit, the power supply voltage fluctuation amplitude and the output signal of the serial communication unit at a set time interval, and transmits them to the microprocessor unit. The microprocessor unit compares the above data with the voltage preset threshold, magnetic saturation preset threshold, power supply fluctuation amplitude threshold and output signal preset threshold stored in the storage unit, and then finds out whether the current detection chip is in a fault state such as power drop, magnetic saturation, power fluctuation, output zero or output saturation.

[0017] 3. The current detection chip can control the microprocessor unit to self-start through the self-start recovery unit, so that the current detection chip can self-start after the interference disappears to exit the fault state by itself.

[0018] 4. The fault counter records the number of times the fault occurs, and the fault timer records the duration of the fault. When the number of times the fault state occurs is greater than the set number of times or the duration of each fault state is greater than the set duration, it means that the current detection chip is in a fault state and cannot be recovered. At this time, the self-start recovery unit sends a reset signal to the microprocessor unit, and the microprocessor unit restarts, thereby reducing the impact of short-term faults. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic structural diagram of a current detection chip according to an embodiment of the present invention.

[0020] In the figure: 1000, current detection chip; 100, magnetic sensitive unit; 200, data signal functional module; 210, microprocessor unit; 220, storage unit; 230, abnormality detection unit; 240, A / D conversion unit; 250, serial communication unit; 260, timer; 270, crystal oscillator unit; 280, self-recovery unit; 290, self-test unit; 300, power module; 310, power conversion unit; 320, reference voltage unit; 400, sampling unit; 500, temperature measurement unit; 600, humidity sensitive unit. DETAILED DESCRIPTION

[0021] The present invention will be further described below in conjunction with the accompanying drawings.

[0022] This embodiment discloses a current detection chip 1000, referring to Figure 1 The current detection chip 1000 includes a magnetic sensing unit 100, a data signal function module 200 and a power module 300. The magnetic sensing unit 100 is used to output a detection signal according to the change of the magnetic field generated by the measured current signal. The data signal function module 200 is electrically connected to the magnetic sensing unit 100 and is used to calculate and output the measured current signal data according to the detection signal in the magnetic sensing unit 100, wherein the measured current signal data includes the current value of the measured current. The power module 300 is electrically connected to the data signal function module 200 and is used to supply power to the data signal function module 200 and the magnetic sensing unit 100.

[0023] The magnetic sensitive unit 100 uses a compound Hall disk or a silicon-based Hall disk, or a silicon-based micro fluxgate probe. In this embodiment, the magnetic sensitive unit 100 specifically uses a Hall disk, which measures the current according to the Hall effect. The measured current signal generates a magnetic field, and the magnetic sensitive unit 100 generates a Hall voltage according to the magnetic field, and transmits the detection signal to the data signal function module 200.

[0024] In this embodiment, the power module 300 includes a power conversion unit 310 and a reference voltage unit 320. The power conversion unit 310 is used to convert the external power into the power signal required by the current detection chip 1000, and the reference voltage unit 320 is used to provide a reference voltage for the current detection chip 1000.

[0025] The data signal function module 200 includes a microprocessor unit 210, a storage unit 220, an abnormality detection unit 230, an A / D conversion unit 240, a serial communication unit 250, a timer 260, and a crystal oscillator unit 270. The storage unit 220, the abnormality detection unit 230, the A / D conversion unit 240, the serial communication unit 250, and the crystal oscillator unit 270 are connected to the microprocessor unit 210.

[0026] The microprocessor unit 210 uses a conventional microprocessor and has data input, processing, calculation and output functions. The input end of the microprocessor unit 210 is connected to the A / D conversion unit 240 to convert the analog signal into a digital signal and input it into the microprocessor, so that the microprocessor can process the data. The microprocessor unit 210 exchanges data with the outside world through the serial communication unit 250. The storage unit 220 is used to store data for the microprocessor unit 210 to read and process.

[0027] A sampling unit 400 is electrically connected between the A / D conversion unit 240 and the magnetic sensitive unit 100 . The sampling unit 400 samples the detection signal output by the magnetic sensitive unit 100 and outputs the sample to the A / D conversion unit 240 , thereby discretizing the detection signal.

[0028] Therefore, the magnetic sensitive unit 100 outputs a detection signal according to the magnetic field generated by the measured current signal, which is converted into a digital signal by the A / D conversion unit 240 and then transmitted to the microprocessor unit 210. The microprocessor unit 210 can obtain the measured current signal data according to the detection signal, and output it to the external system end through the serial communication unit 250 to realize the detection of the current signal.

[0029] The microprocessor unit 210 includes multiple registers for implementing different functions. In this embodiment, the microprocessor unit 210 can adjust the zero offset and gain according to different measurement range requirements of the measured current signal, realize the configurable range function of the current detection chip 1000, and send the zero offset and gain adjustment data to the storage unit 220.

[0030] Specifically, the gain adjustment includes the following steps: S1, after the programming environment is configured, the microprocessor unit 210 is powered on and reset, the chip is initialized by external software, and then the operation code is set to make the current detection chip 1000 enter the pre-programming state; S2, the microprocessor unit 210 reads the current zero point offset value, calculates the zero point code to be written into the storage unit 220 according to the required zero point offset value, and writes the zero point code into the storage unit 220 through the serial communication unit; S3, passing current through the current detection chip 1000, determining the current range, selecting a required gain coefficient according to the current range, and writing a gain code within the corresponding gain coefficient range into the storage unit 220 through the serial communication unit; S4. Re-power on and test to ensure that the zero point and gain of the current detection chip 1000 are correct.

[0031] Through the above operations, the detection range of the current detection chip 1000 can be adjusted to meet various working requirements.

[0032] In this embodiment, according to the size of the input signal, the microprocessor unit 210 can perform segmented gain adjustment. In this embodiment, taking the rated measurement of 100A current signal as an example, the first gain coefficient k1 is used in the 0A-10A gain, the second gain coefficient k2 is used in the 10A-100A gain, and the third gain coefficient k3 is used in the overload to overcurrent alarm interval gain, wherein k1>k2>k3. Thus, the measurement accuracy of the measured signal is improved through segmented gain adjustment.

[0033] The abnormality detection unit 230 is used to monitor the state parameters of the current detection chip 1000. The microprocessor unit 210 compares the state parameters detected by the abnormality detection unit 230 with the preset values, thereby knowing whether the current detection chip 1000 is in a fault state, and reporting the fault information through the serial communication unit 250 when the current detection chip 1000 is in a fault state, so that the user knows the fault state, and thus the current detection chip 1000 can be fault-detected in real time when the current detection chip 1000 is in use, without relying on external detection means, with small fault troubleshooting delay, small fault impact, simple operation and low cost.

[0034] The preset value data is stored in the storage unit 220. Specifically, the preset value includes a voltage preset threshold, a magnetic saturation preset threshold, a power supply fluctuation amplitude threshold, and an output signal preset threshold. The abnormality detection unit 230 reads the power supply voltage signal output by the power module 300, the detection signal output by the magnetic sensitive unit 100, the power supply voltage fluctuation amplitude, and the output signal of the serial communication unit 250 at a set time interval, and transmits them to the microprocessor unit 210. The microprocessor unit 210 compares the above data with the voltage preset threshold, magnetic saturation preset threshold, power supply fluctuation amplitude threshold, and output signal preset threshold stored in the storage unit 220, and then learns whether the current detection chip 1000 is in a fault state such as power drop, magnetic saturation, power fluctuation, output zero, or output saturation.

[0035] In this embodiment, the time interval is specifically set to 1 ms. In other embodiments, the time interval may also be set to other appropriate time lengths.

[0036] The power supply voltage signal output by the power supply module 300 includes the power supply voltage and the reference voltage. In this embodiment, under normal circumstances, when a single power supply is used, the power supply voltage is 5V, the reference voltage value is 2.5V, and the voltage preset threshold is: the power supply voltage is 5±0.5V, and the reference voltage value is 2.5V±0.02V. When the abnormality detection unit 230 reads that the power supply voltage signal output by the power supply module 300 exceeds the above range, it can be known that the current detection chip 1000 is in a power drop fault state.

[0037] The magnetic sensitive unit 100 outputs a detection signal according to the magnetic field generated by the measured current signal, and the abnormality detection unit 230 monitors the detection signal. The magnetic saturation preset threshold can be set according to the selection of the magnetic sensitive unit 100. When the detection signal exceeds the magnetic saturation preset threshold, the current detection chip 1000 is in a magnetic saturation fault state.

[0038] The abnormality detection unit 230 monitors the power supply voltage of the power supply module 300 and calculates the power supply voltage fluctuation amplitude. When the power supply voltage fluctuation amplitude exceeds the power supply fluctuation amplitude threshold, the current detection sensor is in a power supply fluctuation fault state. The power supply fluctuation amplitude threshold can be set according to the power supply voltage, such as 5±1V in this embodiment.

[0039] The abnormality detection unit 230 monitors the output signal of the serial communication unit 250 in real time. In this embodiment, the preset threshold of the output signal is 0.5 V to 4.5 V. When the output signal exceeds the preset threshold, the current detection chip 1000 is in a fault state such as zero output or output saturation.

[0040] Therefore, the above data is monitored in real time by the abnormality detection unit 230, and the detection data is sent to the microprocessor unit 210. The microprocessor unit 210 determines whether the current detection chip 1000 is in a fault state and reports the fault information to let the user know the real-time state of the current detection chip 1000.

[0041] In this embodiment, since the above abnormal states are all detected by detecting voltage signals, the abnormality detection unit 230 may include a plurality of voltage detection circuits, and the voltage signals of the detection objects are detected by the voltage detection circuits.

[0042] The serial communication unit 250 is used for data exchange between the microprocessor unit 210 and the system end. The exchanged data includes data of the normal working state of the current detection chip 1000, data of the current detection chip 1000 in the fault state, environmental state data, and handshake signals, etc. The serial communication unit 250 can communicate through SPI, I2C, UART and other communication methods.

[0043] The timer 260 is used to generate an accurate time interval to implement functions such as delay, pulse width modulation or program switching operation, etc. The crystal oscillator unit 270 is electrically connected to the microprocessor unit 210 to provide an internal clock signal for the microprocessor unit 210 .

[0044] In this embodiment, the data signal function module 200 also includes a self-start recovery unit 280, which is electrically connected to the microprocessor unit 210. The self-start recovery unit 280 is used to control the self-start recovery of the microprocessor unit 210, so that the current detection chip 1000 can self-start after the interference disappears to exit the fault state by itself.

[0045] The self-recovery unit 280 includes a fault counter and a fault timer. The microprocessor unit 210 is electrically connected to the fault counter and the fault timer. The fault counter is used to record the number of times the fault state occurs, and the fault timer is used to record the duration of each fault state.

[0046] In this embodiment, the fault counter and the fault timer are both processors, the fault counter is recorded with counting software, and the fault timer is recorded with timing software. When the abnormality detection unit 230 detects a fault state, the microprocessor unit 210 sends a signal to the fault timer, the fault counter and the memory. The fault timer records the duration of the fault, and the fault counter records the number of times the fault occurs. Each time a fault state is detected, the fault counter counts one more. The memory records the number of times each fault occurs and the duration.

[0047] When the number of times the fault state occurs is greater than the set number of times or the duration of each fault state is greater than the set duration, the self-recovery unit 280 sends a reset signal to the microprocessor unit 210, and the microprocessor unit 210 restarts. Among them, the set number of times and the set duration can be set according to production needs. Therefore, when the number of times the fault state occurs is greater than the set number of times or the duration of each fault state is greater than the set duration, it means that the current detection chip 1000 is in a fault state and cannot be recovered. At this time, the self-recovery unit 280 sends a reset signal to the microprocessor unit 210, and the microprocessor unit 210 restarts, thereby reducing the impact range of short-term faults.

[0048] In this embodiment, after the reset signal is sent to the microprocessor unit 210, the reset instruction is executed through the software control inside the microprocessor unit 210, such as writing a high-level reset signal to the reset pin of the microprocessor unit 210, and the reset signal is sent to the microprocessor unit 210, forcing it to restart and resume normal working state.

[0049] In this embodiment, the data signal function module 200 further includes a self-test unit 290 , and the self-test unit 290 is used to test the current detection chip 1000 before startup.

[0050] The self-test unit 290 is used to: detect the power supply voltage to ensure that the power supply voltage is within a safe range; detect the stability of the internal reference voltage to ensure that the reference voltage is within the allowable error range; detect the frequency and stability of the internal clock signal to ensure that the clock signal is normal; detect the working state of the magnetic sensitive unit 100 to ensure that there is no magnetic saturation or other abnormalities; detect the output signal of the microprocessor unit 210 to ensure that the output signal is normal. The detection principle of the self-test unit 290 is similar to that of the abnormality detection unit 230, except that the microprocessor is not started when the self-test unit 290 self-tests. When the above abnormal state is found during the self-test process, the fault information is recorded and a self-test failure report is generated, and a self-test result report is sent to the system end to inform the system end of the self-test status of the current detection chip 1000. When the self-test passes, the microprocessor unit 210 works normally and performs the predetermined task.

[0051] The self-test unit 290 can perform a self-test when the microprocessor unit 210 executes a reset signal and performs a pre-startup state to ensure that the microprocessor unit 210 can work normally after restarting. The microprocessor unit 210 enters an initialization phase after reset and restart, resetting all registers and state variables to restore to an initial state.

[0052] In this embodiment, the current detection chip 1000 further includes a temperature measurement unit 500 . The temperature measurement unit 500 is electrically connected to the microprocessor unit 210 . The temperature measurement unit 500 is used to monitor the real-time junction temperature of the current detection chip 1000 .

[0053] Specifically, in this embodiment, the internal temperature of the chip is measured by the PTAT principle, specifically by generating a signal proportional to the temperature through the difference in working characteristics of two transistors or diodes of the same type under different bias conditions, thereby measuring the ambient temperature. The temperature measuring unit 500 is electrically connected to a sampling unit 400, and the sampling unit 400 is electrically connected to the A / D conversion unit 240. Thus, the analog signal detected by the temperature measuring unit 500 is converted into a digital signal and sent to the microprocessor. The microprocessor obtains the ambient temperature value according to the signal and outputs it through the serial communication unit 250, so that the user can know the working ambient temperature of the current detection unit.

[0054] The current detection chip 1000 also includes a humidity sensing unit 600, which is electrically connected to the microprocessor unit 210, and is used to detect the ambient humidity. The humidity sensing unit 600 is electrically connected to a sampling unit 400, and the sampling unit 400 is electrically connected to the A / D conversion unit 240, so as to send the humidity sensitive power supply detection signal to the microprocessor unit 210, and the microprocessor unit 210 obtains the humidity detection value and outputs it through the serial communication unit 250.

[0055] The humidity sensitive unit 600 may be a polymer humidity sensing unit or a MEMS humidity sensing structure. The polymer humidity sensing unit utilizes the hygroscopic properties of polymer materials and detects humidity by measuring the electrical properties (such as resistance or capacitance) of polymer materials. The MEMS humidity sensing structure integrates a MEMS microstructure such as a cantilever beam or a thin film inside the chip, and detects humidity by measuring the capacitance or resistance changes of the microstructure under different humidity. Through the humidity sensitive unit 600, high humidity may cause corrosion of the metal leads inside the chip, reduce the reliability of the electrical connection, and even cause a short circuit inside the chip.

[0056] In this way, the user can know the humidity of the working environment of the current detection chip 1000 in real time, and avoid the current detection chip 1000 working in a high humidity environment affecting the insulation resistance of the insulating material, resulting in a decrease in the insulation performance of the chip; avoid humidity affecting the packaging material of the chip. The packaging material may expand due to moisture absorption, affecting the sealing of the chip. The decrease in sealing will cause external moisture to enter the interior of the chip and affect the normal operation of the chip.

[0057] In this embodiment, the storage unit 220 stores the environmental data detected by the humidity sensitive unit 600 and the temperature measuring unit 500. The microprocessor unit 210 can predict the remaining life of the computing chip through edge computing based on environmental information such as temperature and humidity in the storage unit 220.

[0058] In this embodiment, according to the ambient temperature detected by the temperature measuring unit 500 , the microprocessor unit 210 can compensate the output of the magnetic sensitive unit 100 , so as to make the current detection chip 1000 more accurate.

[0059] The output voltage VH of the magnetic sensitive unit 100 according to the Hall effect is: VH=KH*B*IH Where: VH is the output voltage of the Hall chip, in mV. KH is the Hall coefficient, in mV / (mA*T), which is a constant related to the material properties. Different materials have different Hall coefficients. B is the magnetic field strength generated by the measured current, in T. IH is the operating current of the Hall chip, in mA.

[0060] The Hall coefficient KH usually changes with temperature, which will cause the Hall voltage VH to change, thereby affecting the accuracy of current measurement. Therefore, the present invention ensures the accuracy of current measurement by compensating for temperature changes.

[0061] Specifically, the storage unit 220 stores the Hall coefficients KH at different temperatures. The microprocessor unit 210 reads the corresponding Hall coefficient in the storage unit 220 according to the temperature currently measured by the temperature measuring unit 500, and compensates the detection signal output by the magnetic sensitive unit 100.

[0062] The above description is only a preferred embodiment of the present invention, so all equivalent changes or modifications made according to the structure, characteristics and principles described in the scope of the patent application of the present invention are included in the scope of the patent application of the present invention.

Claims

1. A current detection chip, characterized in that: The current detection chip (1000) comprises: A magnetic sensitive unit (100), used for outputting a detection signal according to a change in a magnetic field generated by a current signal being measured; Data signal function module (200); a power module (300), the power module (300) being electrically connected to the data signal function module (200), and the power module (300) being used to supply power to the data signal function module (200) and the magnetic sensitive unit (100); The data signal function module (200) comprises a microprocessor unit (210), a storage unit (220), an abnormality detection unit (230), an A / D conversion unit (240) and a serial communication unit (250), wherein the storage unit (220), the abnormality detection unit (230), the A / D conversion unit (240) and the serial communication unit (250) are connected to the microprocessor unit (210); The A / D conversion unit (240) is electrically connected to the magnetic sensitive unit (100) and is used to convert the detection signal output by the magnetic sensitive unit (100) into a digital signal and transmit it to the microprocessor unit (210); the microprocessor unit (210) obtains the measured current signal data according to the detection signal, and the microprocessor unit (210) exchanges data with the outside world through the serial communication unit (250); The abnormality detection unit (230) is used to monitor the state parameters of the current detection chip (1000) and transmit the state parameters to the microprocessor unit (210); when the state parameters exceed a preset value, the microprocessor unit (210) reports fault information via the serial communication unit (250).

2. A current detection chip as claimed in claim 1, characterized in that: The preset values ​​include a voltage preset threshold, a magnetic saturation preset threshold, a power supply fluctuation amplitude threshold, and an output signal preset threshold stored in the storage unit (220); the abnormality detection unit (230) reads the power supply voltage signal output by the power module (300), the detection signal output by the magnetic sensitive unit (100), the power supply voltage fluctuation amplitude, and the output signal of the serial communication unit (250) at a set time interval.

3. A current detection chip as claimed in claim 2, characterized in that: When the power supply voltage signal is greater than the preset voltage threshold, and / or the detection signal output by the magnetic sensitive unit (100) exceeds the preset magnetic saturation threshold, and / or the power supply voltage fluctuation amplitude is greater than the power supply fluctuation amplitude threshold, and / or the output signal of the serial communication unit (250) exceeds the preset output signal threshold, the microprocessor unit (210) determines that the current detection chip (1000) is in a fault state and reports fault information.

4. A current detection chip as claimed in claim 3, characterized in that: The data signal function module (200) further comprises a self-start recovery unit (280), wherein the self-start recovery unit (280) is electrically connected to the microprocessor unit (210), and the self-start recovery unit (280) is used to control the microprocessor unit (210) to self-start recovery.

5. A current detection chip as claimed in claim 4, characterized in that: The self-start recovery unit (280) comprises a fault counter and a fault timer, the microprocessor unit (210) is electrically connected to the fault counter and the fault timer, the fault counter is used to record the number of times the fault state occurs, and the fault timer is used to record the duration of each fault state; When the number of occurrences of the fault state is greater than a set number of times or the duration of each fault state is greater than a set duration, the self-start recovery unit (280) sends a reset signal to the microprocessor unit (210), and the microprocessor unit (210) restarts.

6. A current detection chip as claimed in claim 1, characterized in that: The data signal function module (200) further comprises a self-test unit (290), and the self-test unit (290) is used to test the current detection chip (1000) before starting.

7. A current detection chip as claimed in claim 1, characterized in that: The current detection chip (1000) further comprises a temperature measurement unit (500), wherein the temperature measurement unit (500) is electrically connected to the microprocessor unit (210), and the temperature measurement unit (500) is used to monitor the real-time junction temperature of the current detection chip (1000).

8. A current detection chip as claimed in claim 7, characterized in that: The magnetic sensitive unit (100) comprises a Hall disk, and the storage unit (220) stores Hall coefficients at different temperatures; the microprocessor unit (210) reads the corresponding Hall coefficient in the storage unit (220) according to the temperature currently measured by the temperature measuring unit (500), and compensates the detection signal output by the magnetic sensitive unit (100).

9. The current detection chip according to claim 1, characterized in that: The current detection chip (1000) further comprises a humidity sensitive unit (600), wherein the humidity sensitive unit (600) is electrically connected to the microprocessor unit (210), and the humidity sensitive unit (600) is used to detect environmental humidity.

10. The current detection chip according to claim 1, characterized in that: The power module (300) comprises a power conversion unit (310) and a reference voltage unit (320), wherein the power conversion unit (310) is used to convert an external power supply into a power supply signal required inside the current detection chip (1000), and the reference voltage unit (320) is used to provide a reference voltage inside the current detection chip (1000).

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