Method and device for evaluating transient voltage and current during type II short-circuit process of IGBT

Abstract

An embodiment of the present application provides a method and device for evaluating transient voltage and current during a Class II short-circuit process of an IGBT, the method comprising: in response to a Class II short-circuit occurring in an IGBT chip until the short-circuit current reaches a peak value, establishing a relationship model between collector current and commutation circuit voltage according to circuit parameters; establishing a relationship model between collector current and gate voltage using the physical characteristics of chip devices; establishing a relationship model between collector-emitter voltage and chip collector-emitter voltage according to the capacitance effect; determining the collector-emitter voltage and collector current during a Class II short-circuit of the IGBT chip according to the relationship model between collector current and commutation circuit voltage, the relationship model between collector current and gate voltage, and the relationship model between collector-emitter voltage and chip collector-emitter voltage; the present application improves the accuracy and reliability of IGBT state detection by acquiring circuit parameters to analyze the transient voltage and current of the Class II short-circuit of the IGBT.

Description

Technical Field

[0001] The present application relates to the field of IGBT device evaluation, and specifically to a method and device for evaluating transient voltage and current during a type II short-circuit process of an IGBT. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET and bipolar transistor (BJT). It has both the fast switching speed of MOSFET and the low on-state loss of bipolar transistor. Therefore, it has been widely used in applications requiring high efficiency and fast switching, such as new energy converters, flexible DC transmission equipment, and dynamic reactive power compensation equipment.

[0003] In these applications, the turn-on and turn-off process of IGBT is very critical. In the transient process of IGBT turn-on, the collector current and collector-emitter voltage change dramatically, which directly affects the power loss and transient stress of the device, and has an important impact on the stability and life of the IGBT. Therefore, accurately grasping the dynamic relationship between the collector current and the collector-emitter voltage is crucial for power loss and stress analysis.

[0004] However, in the case of IGBT Class II short circuit, the existing technology has not yet provided a complete solution to achieve this goal, and there is still a lack of effective solutions for the accurate evaluation of transient voltage and current. Summary of the invention

[0005] In response to the problems in the prior art, the present application provides a method and device for evaluating the transient voltage and current during a Type II short-circuit process of an IGBT, which can analyze the Type II short-circuit transient voltage and current of the IGBT by acquiring circuit parameters, thereby improving the accuracy and reliability of IGBT status detection.

[0006] In order to solve at least one of the above problems, the present application provides the following technical solutions:

[0007] According to a first aspect of an embodiment of the present application, the present application provides a method for evaluating transient voltage and current during a type II short-circuit process of an IGBT, comprising:

[0008] In response to the occurrence of a second type of short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation circuit voltage is established according to circuit parameters;

[0009] The relationship model between collector current and gate voltage is established by using the physical characteristics of chip devices;

[0010] The relationship model between the collector-emitter voltage and the chip collector-emitter voltage is established based on the capacitance effect;

[0011] The collector-emitter voltage and collector current of the IGBT chip during a type II short circuit are determined according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0012] According to any embodiment of the present application, in response to the occurrence of a second type of short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters, including:

[0013] In response to the IGBT chip having a second type short circuit until the short circuit current reaches a peak value, the corresponding relationship between the current collector current and the commutation circuit voltage is determined according to the chip loop parasitic inductance, the chip package parasitic inductance and the chip collector-emitter voltage.

[0014] According to any embodiment of the present application, the method of establishing a relationship model between collector current and gate voltage by using physical characteristics of chip devices includes:

[0015] The corresponding relationship between the current collector current and the gate voltage is determined according to the gate channel width, channel electron mobility, channel capacitance per unit area, gate channel length, IGBT internal PNP transistor amplification factor and threshold voltage.

[0016] According to any implementation manner of the present application, the step of establishing a relationship model between the collector-emitter voltage and the chip collector-emitter voltage based on the capacitance effect includes:

[0017] According to the relationship between the collector-gate capacitance and the collector-gate voltage, and the corresponding relationship between the collector-gate capacitance and the depletion layer width, the corresponding relationship between the collector-emitter voltage and the chip collector-emitter voltage is obtained.

[0018] According to any embodiment of the present application, the determining of the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage includes:

[0019] According to the correspondence between the collector current and the gate voltage, the correspondence between the collector-emitter voltage and the chip collector-emitter voltage, and the correspondence between the collector current and the commutation loop voltage, the collector-emitter voltage and the collector current of the IGBT chip during a type II short circuit are determined.

[0020] According to a second aspect of an embodiment of the present application, the present application provides an IGBT type II short-circuit process transient voltage and current evaluation device, comprising:

[0021] The loop voltage characterization module is used to: establish a relationship model between the collector current and the commutation loop voltage according to the circuit parameters in response to the occurrence of a second type short circuit in the IGBT chip until the short circuit current reaches a peak value;

[0022] The gate voltage characterization module is used to: establish a relationship model between collector current and gate voltage using the physical characteristics of chip devices;

[0023] The collector-emitter voltage characterization module is used to: establish a relationship model between the collector-emitter voltage and the chip collector-emitter voltage based on the capacitance effect;

[0024] The voltage and current evaluation module is used to determine the collector-emitter voltage and collector current of the IGBT chip during a type II short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0025] According to any embodiment of the present application, the loop voltage characterization module is specifically used for:

[0026] In response to the IGBT chip having a second type short circuit until the short circuit current reaches a peak value, the corresponding relationship between the current collector current and the commutation circuit voltage is determined according to the chip loop parasitic inductance, the chip package parasitic inductance and the chip collector-emitter voltage.

[0027] According to any embodiment of the present application, the gate voltage characterization module is specifically used for:

[0028] The corresponding relationship between the current collector current and the gate voltage is determined according to the gate channel width, channel electron mobility, channel capacitance per unit area, gate channel length, IGBT internal PNP transistor amplification factor and threshold voltage.

[0029] According to any implementation manner of the present application, the collector-emitter voltage characterization module is specifically used for:

[0030] According to the relationship between the collector-gate capacitance and the collector-gate voltage, and the corresponding relationship between the collector-gate capacitance and the depletion layer width, the corresponding relationship between the collector-emitter voltage and the chip collector-emitter voltage is obtained.

[0031] According to any implementation of the present application, the voltage and current evaluation module is specifically used for:

[0032] According to the correspondence between the collector current and the gate voltage, the correspondence between the collector-emitter voltage and the chip collector-emitter voltage, and the correspondence between the collector current and the commutation loop voltage, the collector-emitter voltage and the collector current of the IGBT chip during a type II short circuit are determined.

[0033] According to a third aspect of an embodiment of the present application, the present application provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, the steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT are implemented.

[0034] According to a fourth aspect of an embodiment of the present application, the present application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT.

[0035] According to the fifth aspect of the embodiments of the present application, the present application provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT.

[0036] It can be seen from the above technical scheme that the present application provides a method and device for evaluating the transient voltage and current during a Class II short-circuit process of an IGBT. By responding to a Class II short-circuit occurring in the IGBT chip until the short-circuit current reaches a peak value, a relationship model between the collector current and the commutation circuit voltage is established according to circuit parameters; a relationship model between the collector current and the gate voltage is established using the physical characteristics of the chip device; a relationship model between the collector-emitter voltage and the chip collector-emitter voltage is established according to the capacitance effect; the collector-emitter voltage and collector current of the IGBT chip during a Class II short-circuit occurring according to the relationship model between the collector current and the commutation circuit voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage are determined; the accuracy and reliability of the IGBT state detection are improved by acquiring circuit parameters to analyze the transient voltage and current of the Class II short-circuit of the IGBT. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 A schematic diagram of the structure of a half-bridge circuit of a method for evaluating transient voltage and current during a type II short-circuit process of an IGBT in an embodiment of the present application;

[0039] Figure 2 A schematic diagram of the IGBT structure of the method for evaluating transient voltage and current during a type II short-circuit process of the IGBT in an embodiment of the present application;

[0040] Figure 3A schematic diagram of an IGBT type II short-circuit transient process of an IGBT type II short-circuit transient voltage and current evaluation method in an embodiment of the present application;

[0041] Figure 4 It is a flow chart of the transient voltage and current evaluation method of the IGBT type II short-circuit process in the embodiment of the present application;

[0042] Figure 5 It is a structural diagram of the transient voltage and current evaluation device for the IGBT type II short-circuit process in the embodiment of the present application;

[0043] Figure 6 It is a schematic diagram of the structure of an electronic device in an embodiment of the present application. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] The acquisition, storage, use, and processing of data in the technical solution of this application comply with the relevant provisions of national laws and regulations.

[0046] Taking into account the problem that the prior art lacks an effective solution for accurate evaluation of transient voltage and current, the present application provides a method and device for evaluating transient voltage and current during a Type II short-circuit process of an IGBT. By acquiring circuit parameters to analyze the Type II short-circuit transient voltage and current of the IGBT, the accuracy and reliability of IGBT status detection are improved.

[0047] Figure 1 is the half-bridge circuit model, Figure 2 For IGBT chip structure, Figure 3 It is the second type short circuit process waveform. U GE is the gate voltage, U CE is the collector-emitter voltage ( U CE,chip is the collector-emitter voltage of the IGBT chip, L s,CE is the parasitic inductance of the IGBT device package), i C is the collector current, U F is the FWD voltage ( U F,chip is the chip emitter voltage,L s,F is the parasitic inductance of the FWD device package), i F is the FWD current, I L is the load inductor current, L s,1 is the parasitic inductance value of the IGBT circuit, L s,2 is the parasitic inductance of the FWD freewheeling circuit. The reference direction of voltage and current is Figure 1 Winning bid.

[0048] When a short circuit occurs in half of the bridge arm of the commutation circuit (i.e., a short circuit occurs between points S and C) while the IGBT is already turned on, a type II short circuit will occur in the IGBT.

[0049] In order to analyze the transient voltage and current of IGBT type II short circuit by acquiring circuit parameters, the accuracy and reliability of IGBT state detection are improved. The present application provides an embodiment of a method for evaluating transient voltage and current during IGBT type II short circuit. Figure 4 The transient voltage and current evaluation method of the IGBT type II short-circuit process specifically includes the following contents:

[0050] Step S101: in response to the occurrence of a type II short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters.

[0051] in, Figure 3 of t From the time when a short circuit occurs at time 0 until the short circuit current reaches its peak value ( t 1 moment), at this time, the parasitic inductance and package inductance in the commutation circuit will affect the speed of current change. By analyzing the electrical parameters of the commutation circuit, such as the parasitic inductance in the circuit and the package parasitic inductance in the chip, the collector current is established. i C and the commutation circuit voltage U DC It can describe how the current changes with time during a short circuit, and combined with the influence of parasitic inductance, derive the dynamic relationship between the commutation circuit voltage and the collector current, which helps to understand the fluctuation of the commutation circuit voltage during the short circuit process and the time point when the current reaches the peak value, thus providing a basis for subsequent voltage and current analysis.

[0052] Step S102: establishing a relationship model between collector current and gate voltage using the physical characteristics of chip devices;

[0053] Among them, the physical characteristics of the IGBT chip determine the collector current i C and gate voltage UGE According to the chip's gate channel width, channel electron mobility, gate channel capacitance per unit area, and channel length, it is possible to deduce how the gate voltage affects the collector current. In this process, the amplification factor and threshold voltage of the PNP transistor inside the IGBT must also be considered. These parameters directly affect the gate voltage's ability to control the collector current. By establishing this model, the conduction characteristics of the IGBT under different gate voltages can be accurately described, thereby helping to predict the dynamic behavior of the collector current of the IGBT during a Class II short circuit.

[0054] Step S103: establishing a relationship model between the collector-emitter voltage and the chip collector-emitter voltage according to the capacitance effect;

[0055] There is capacitive coupling between the gate and collector of the IGBT. Especially in the case of a short circuit, the capacitive effect significantly affects the voltage change. C CG and the change in the width of the depletion layer, establishing the collector-emitter voltage U CE Chip emitter voltage U CE,chip As the collector-emitter voltage changes, the collector-gate capacitance will also be dynamically adjusted, and the change of this capacitance has a direct impact on the short-circuit process of the IGBT. By establishing this model, the interaction between the gate voltage and the collector-emitter voltage during the second type of short-circuit process can be accurately described.

[0056] Step S104: determining the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0057] Among them, on the basis of completing the establishment of the above three-step model, this step combines these models to accurately determine the collector-emitter voltage of the IGBT chip during the second-class short circuit process U CE,chip and collector current i C Through the relationship between integrated circuit parameters, capacitance effects, and physical characteristics, the changes in voltage and current during the short circuit process can be obtained, thereby reducing dependence on external measurement equipment and improving the accuracy of the evaluation.

[0058] From the above description, it can be seen that the method for evaluating transient voltage and current during the IGBT Type II short-circuit process provided in the embodiment of the present application can analyze the IGBT Type II short-circuit transient voltage and current by acquiring circuit parameters, thereby improving the accuracy and reliability of IGBT status detection.

[0059] In one embodiment of the transient voltage and current evaluation method for the IGBT type II short circuit process of the present application, in response to the IGBT chip having a type II short circuit until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters, including:

[0060] In response to the IGBT chip having a second type short circuit until the short circuit current reaches a peak value, the corresponding relationship between the current collector current and the commutation circuit voltage is determined according to the chip loop parasitic inductance, the chip package parasitic inductance and the chip collector-emitter voltage.

[0061] exist Figure 3 of t From the time when a short circuit occurs at time 0 until the short circuit current reaches its peak value ( t At time 1), the corresponding relationship between the current collector current and the commutation circuit voltage is determined by formula (1):

[0062] (1);

[0063] Among them, U DC Characterize the commutation circuit voltage, L s1 Characterize chip package parasitic inductance, i c Characterizes the collector current, L S,CE Characterize chip package parasitic inductance, u chip,CE Characterizes the chip emitter voltage.

[0064] In one embodiment of the IGBT type II short-circuit process transient voltage and current evaluation method of the present application, the relationship model between the collector current and the gate voltage is established by using the physical characteristics of the chip device, including:

[0065] The corresponding relationship between the current collector current and the gate voltage is determined according to the gate channel width, channel electron mobility, channel capacitance per unit area, gate channel length, IGBT internal PNP transistor amplification factor and threshold voltage.

[0066] When the IGBT is short-circuited, it exits the saturation region and enters the active region. The control relationship between the gate voltage and the collector current can be expressed by formula (2):

[0067] (2)

[0068] in, w Characterized by gate channel width, μ n Characterize channel electron mobility, C ox Characterize the channel capacitance per unit area, l Characterize the gate channel length, α pnpCharacterizes the internal PNP transistor amplification factor of the IGBT, U T Characterizes the threshold voltage.

[0069] In one embodiment of the method for evaluating transient voltage and current during a type II short-circuit process of an IGBT of the present application, the relationship model between the collector-emitter voltage and the chip collector-emitter voltage is established based on the capacitance effect, including:

[0070] According to the relationship between the collector-gate capacitance and the collector-gate voltage, and the corresponding relationship between the collector-gate capacitance and the depletion layer width, the corresponding relationship between the collector-emitter voltage and the chip collector-emitter voltage is obtained.

[0071] In the saturation region, the IGBT internal chip voltage u CE,chip With collector current i C There is an approximate linear relationship between i C Elevated, u CE,chip There was a slight increase, but u CE,chip The amplitude does not change much, generally within 3~4V. When the IGBT enters the active region, the above relationship becomes invalid. As the voltage shared by the J2 junction inside the IGBT increases, α pnp Increase.

[0072] In the second type short circuit process of IGBT, u GE The increase is due to u CE,chip Miller capacitance C CG coupling to the gate (GE) causes, u GE and u CE,chip The corresponding relationship between the gate voltage and the chip collector-emitter voltage is initially characterized by formula (3):

[0073] (3)

[0074] Among them, u GE Characterizes gate voltage, C CG Characterizes the gate capacitance, C GE Characterize gate-emitter capacitance;

[0075] C CG is a collector gate voltage u CGWhen the collector-gate voltage is approximately equal to the chip collector-emitter voltage, the corresponding relationship between the collector-gate capacitance and the collector-gate voltage is determined by formula (4):

[0076] (4)

[0077] Among them, w j2 Characterize the depletion layer width, ε s Characterizes the dielectric constant of the chip material, q characterizes the charge, N D Characterize the carrier concentration, A q Characterize the effective carrier cross-sectional area, v sat,P Characterize the saturation drift velocity;

[0078] The corresponding relationship between the J2 junction capacitance and the depletion layer width is determined by formula (5):

[0079] (5)

[0080] in, C J2 Characterize the J2 junction capacitance;

[0081] Approximately C CG Approximately equal to the junction capacitance of J2 C J2 According to formula (3), formula (4) and formula (5), formula (6) is obtained to determine the corresponding relationship between the gate voltage and the chip collector-emitter voltage:

[0082] (6)

[0083] The method of determining the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage includes:

[0084] According to the correspondence between the collector current and the gate voltage, the correspondence between the collector-emitter voltage and the chip collector-emitter voltage, and the correspondence between the collector current and the commutation loop voltage, the collector-emitter voltage and the collector current of the IGBT chip during a type II short circuit are determined.

[0085] Substituting equation (6) into equation (2), we get equation (7), which represents the corresponding relationship between the collector-emitter voltage and collector current during the second type of short circuit of the IGBT chip:

[0086] (7)

[0087] The collector-emitter voltage and collector current of the IGBT chip during a type II short circuit are determined using formulas (1) and (7).

[0088] In order to analyze the IGBT type II short-circuit transient voltage and current by acquiring circuit parameters, thereby improving the accuracy and reliability of IGBT state detection, the present application provides an embodiment of an IGBT type II short-circuit transient voltage and current evaluation device for realizing all or part of the contents of the IGBT type II short-circuit transient voltage and current evaluation method, see Figure 5 The IGBT type II short-circuit process transient voltage and current evaluation device specifically includes the following contents:

[0089] The loop voltage characterization module 1101 is used to: in response to the occurrence of a second type of short circuit in the IGBT chip until the short circuit current reaches a peak value, establish a relationship model between the collector current and the commutation loop voltage according to circuit parameters;

[0090] The gate voltage characterization module 1102 is used to: establish a relationship model between collector current and gate voltage by using the physical characteristics of the chip device;

[0091] The collector-emitter voltage characterization module 1103 is used to: establish a relationship model between the collector-emitter voltage and the chip collector-emitter voltage according to the capacitance effect;

[0092] The voltage and current evaluation module 1104 is used to determine the collector-emitter voltage and collector current of the IGBT chip during a type II short circuit according to the relationship model between the collector current and the commutation circuit voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0093] According to any embodiment of the present application, the loop voltage characterization module is specifically used for:

[0094] In response to the IGBT chip having a second type short circuit until the short circuit current reaches a peak value, the corresponding relationship between the current collector current and the commutation circuit voltage is determined according to the chip loop parasitic inductance, the chip package parasitic inductance and the chip collector-emitter voltage.

[0095] According to any embodiment of the present application, the gate voltage characterization module is specifically used for:

[0096] The corresponding relationship between the current collector current and the gate voltage is determined according to the gate channel width, channel electron mobility, channel capacitance per unit area, gate channel length, IGBT internal PNP transistor amplification factor and threshold voltage.

[0097] According to any implementation manner of the present application, the collector-emitter voltage characterization module is specifically used for:

[0098] According to the relationship between the collector-gate capacitance and the collector-gate voltage, and the corresponding relationship between the collector-gate capacitance and the depletion layer width, the corresponding relationship between the collector-emitter voltage and the chip collector-emitter voltage is obtained.

[0099] According to any implementation of the present application, the voltage and current evaluation module is specifically used for:

[0100] According to the correspondence between the collector current and the gate voltage, the correspondence between the collector-emitter voltage and the chip collector-emitter voltage, and the correspondence between the collector current and the commutation loop voltage, the collector-emitter voltage and the collector current of the IGBT chip during a type II short circuit are determined.

[0101] From the above description, it can be seen that the IGBT Type II short-circuit process transient voltage and current evaluation device provided in the embodiment of the present application can analyze the IGBT Type II short-circuit transient voltage and current by acquiring circuit parameters, thereby improving the accuracy and reliability of IGBT state detection.

[0102] From the hardware level, in order to analyze the IGBT type II short-circuit transient voltage and current by acquiring circuit parameters, thereby improving the accuracy and reliability of IGBT state detection, the present application provides an embodiment of an electronic device for implementing all or part of the contents of the IGBT type II short-circuit process transient voltage and current evaluation method, and the electronic device specifically includes the following contents:

[0103] Processor, memory, communication interface and bus; wherein the processor, memory and communication interface communicate with each other through the bus; the communication interface is used to realize information transmission between the IGBT type II short-circuit process transient voltage and current evaluation device and related devices such as core business systems, user terminals and related databases; the logic controller can be a desktop computer, a tablet computer and a mobile terminal, etc., and the present embodiment is not limited thereto. In the present embodiment, the logic controller can be implemented with reference to the embodiment of the IGBT type II short-circuit process transient voltage and current evaluation method and the embodiment of the IGBT type II short-circuit process transient voltage and current evaluation device in the embodiment, and the contents thereof are incorporated herein, and the repeated parts are not repeated.

[0104] It is understandable that the user terminal may include a smart phone, a tablet electronic device, a network set-top box, a portable computer, a desktop computer, a personal digital assistant (PDA), a vehicle-mounted device, a smart wearable device, etc. Among them, the smart wearable device may include smart glasses, a smart watch, a smart bracelet, etc.

[0105] In practical applications, part of the method for evaluating transient voltage and current during the IGBT Class II short-circuit process can be performed on the electronic device side as described above, or all operations can be completed in the client device. The selection can be made based on the processing capability of the client device and the limitations of the user's usage scenario. This application does not limit this. If all operations are completed in the client device, the client device may also include a processor.

[0106] The client device may have a communication module (i.e., a communication unit) that can communicate with a remote server to achieve data transmission with the server. The server may include a server on the task scheduling center side, and other implementation scenarios may also include a server on an intermediate platform, such as a server on a third-party server platform that has a communication link with the task scheduling center server. The server may include a single computer device, or a server cluster consisting of multiple servers, or a server structure of a distributed device.

[0107] Figure 6 FIG. 9 is a schematic block diagram of the system structure of the electronic device 9600 according to an embodiment of the present application. Figure 6 As shown, the electronic device 9600 may include a central processor 9100 and a memory 9140; the memory 9140 is coupled to the central processor 9100. It is worth noting that Figure 6 is exemplary; other types of structures may also be used to supplement or replace this structure to implement telecommunication functions or other functions.

[0108] In one embodiment, the transient voltage and current evaluation method function of the IGBT type II short circuit process can be integrated into the central processor 9100. The central processor 9100 can be configured to perform the following control:

[0109] Step S101: in response to the occurrence of a second type short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters;

[0110] Step S102: establishing a relationship model between collector current and gate voltage using the physical characteristics of chip devices;

[0111] Step S103: establishing a relationship model between the collector-emitter voltage and the chip collector-emitter voltage according to the capacitance effect;

[0112] Step S104: determining the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0113] From the above description, it can be seen that the electronic device provided in the embodiment of the present application improves the accuracy and reliability of IGBT status detection by acquiring circuit parameters to analyze the IGBT type II short-circuit transient voltage and current.

[0114] In another embodiment, the IGBT Type II short-circuit process transient voltage and current evaluation device can be configured separately from the central processing unit 9100. For example, the IGBT Type II short-circuit process transient voltage and current evaluation device can be configured as a chip connected to the central processing unit 9100, and the IGBT Type II short-circuit process transient voltage and current evaluation method function can be implemented through the control of the central processing unit.

[0115] like Figure 6 As shown, the electronic device 9600 may also include: a communication module 9110, an input unit 9120, an audio processor 9130, a display 9160, and a power supply 9170. It is worth noting that the electronic device 9600 does not necessarily have to include Figure 6 In addition, the electronic device 9600 may also include Figure 6 For components not shown, reference may be made to the prior art.

[0116] like Figure 6 As shown, the central processing unit 9100 is sometimes also referred to as a controller or an operation control, and may include a microprocessor or other processor device and / or logic device. The central processing unit 9100 receives input and controls the operation of various components of the electronic device 9600.

[0117] The memory 9140 may be, for example, one or more of a cache, a flash memory, a hard drive, a removable medium, a volatile memory, a non-volatile memory or other suitable devices. The above-mentioned information related to the failure may be stored, and a program for executing the relevant information may also be stored. The CPU 9100 may execute the program stored in the memory 9140 to implement information storage or processing, etc.

[0118] The input unit 9120 provides input to the central processing unit 9100. The input unit 9120 is, for example, a key or a touch input device. The power supply 9170 is used to provide power to the electronic device 9600. The display 9160 is used to display display objects such as images and texts. The display may be, for example, an LCD display, but is not limited thereto.

[0119] The memory 9140 may be a solid-state memory, such as a read-only memory (ROM), a random access memory (RAM), a SIM card, etc. It may also be a memory that saves information even when the power is off, can be selectively erased, and is provided with more data, examples of which are sometimes referred to as EPROMs, etc. The memory 9140 may also be some other type of device. The memory 9140 includes a buffer memory 9141 (sometimes referred to as a buffer). The memory 9140 may include an application / function storage unit 9142, which is used to store application programs and function programs or processes for executing the operation of the electronic device 9600 through the central processor 9100.

[0120] The memory 9140 may also include a data storage unit 9143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 9144 of the memory 9140 may include various drivers for communication functions of the electronic device and / or for executing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0121] The communication module 9110 is a transmitter / receiver 9110 that sends and receives signals via an antenna 9111. The communication module (transmitter / receiver) 9110 is coupled to the central processor 9100 to provide input signals and receive output signals, which may be the same as the case of a conventional mobile communication terminal.

[0122] Based on different communication technologies, multiple communication modules 9110 may be provided in the same electronic device, such as a cellular network module, a Bluetooth module and / or a wireless LAN module, etc. The communication module (transmitter / receiver) 9110 is also coupled to a speaker 9131 and a microphone 9132 via an audio processor 9130 to provide an audio output via the speaker 9131 and receive an audio input from the microphone 9132, thereby realizing a common telecommunication function. The audio processor 9130 may include any suitable buffer, decoder, amplifier, etc. In addition, the audio processor 9130 is also coupled to the central processor 9100, so that recording can be performed on the local machine through the microphone 9132, and the sound stored on the local machine can be played through the speaker 9131.

[0123] The embodiments of the present application also provide a computer-readable storage medium capable of implementing all the steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT in the above-mentioned embodiment, where the execution subject is a server or a client. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, all the steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT in the above-mentioned embodiment are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0124] Step S101: in response to the occurrence of a second type short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters;

[0125] Step S102: establishing a relationship model between collector current and gate voltage using the physical characteristics of chip devices;

[0126] Step S103: establishing a relationship model between the collector-emitter voltage and the chip collector-emitter voltage according to the capacitance effect;

[0127] Step S104: determining the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0128] From the above description, it can be seen that the computer-readable storage medium provided in the embodiment of the present application improves the accuracy and reliability of IGBT state detection by acquiring circuit parameters to analyze the IGBT type II short-circuit transient voltage and current.

[0129] The embodiments of the present application also provide a computer program product capable of implementing all steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT in the above-mentioned embodiment, where the execution subject is a server or a client. When the computer program / instruction is executed by a processor, the steps of the method for evaluating transient voltage and current during a Class II short-circuit process of an IGBT are implemented. For example, the computer program / instruction implements the following steps:

[0130] Step S101: in response to the occurrence of a second type short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters;

[0131] Step S102: establishing a relationship model between collector current and gate voltage using the physical characteristics of chip devices;

[0132] Step S103: establishing a relationship model between the collector-emitter voltage and the chip collector-emitter voltage according to the capacitance effect;

[0133] Step S104: determining the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage.

[0134] From the above description, it can be seen that the computer program product provided in the embodiment of the present application improves the accuracy and reliability of IGBT status detection by acquiring circuit parameters to analyze the IGBT type II short-circuit transient voltage and current.

[0135] It should be understood by those skilled in the art that embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0136] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (apparatus), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0137] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0138] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1The steps for the functions specified in one or more boxes.

[0139] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for evaluating transient voltage and current during a type II short-circuit process of an IGBT, characterized in that: The method comprises: In response to the occurrence of a second type of short circuit in an insulated gate bipolar transistor (IGBT) chip until the short circuit current reaches a peak value, a relationship model between a collector current and a commutation circuit voltage is established according to circuit parameters; The relationship model between collector current and gate voltage is established by using the physical characteristics of chip devices; The relationship model between the collector-emitter voltage and the chip collector-emitter voltage is established based on the capacitance effect; Determine the collector-emitter voltage and collector current of the IGBT chip during a type II short circuit according to the relationship model between the collector current and the commutation circuit voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage; The corresponding relationship between the collector-emitter voltage and the collector current during the second type short circuit of the IGBT chip is: Among them, i c Characterizes the collector current, u CE,chip Characterize the chip emitter voltage, w Characterized by gate channel width, μ n Characterize channel electron mobility, C OX represents the capacitance per unit area of ​​the channel, l represents the gate channel length, α pnp Characterizes the internal PNP transistor amplification factor of IGBT, U T Characterize threshold voltage, C GE Characterize gate-emitter capacitance, ε s Characterizes the dielectric constant of the chip material, q characterizes the charge, N D Characterize the carrier concentration, A q Characterize the effective carrier cross-sectional area, v sat,P Characterizes the saturation drift velocity.

2. The method for evaluating transient voltage and current during a type II short-circuit process of an IGBT according to claim 1, characterized in that: In response to the occurrence of a second type of short circuit in the IGBT chip until the short circuit current reaches a peak value, a relationship model between the collector current and the commutation loop voltage is established according to circuit parameters, including: In response to the IGBT chip having a second type of short circuit until the short circuit current reaches a peak value, the corresponding relationship between the current collector current and the commutation circuit voltage is determined according to the chip loop parasitic inductance, the chip package parasitic inductance and the chip collector-emitter voltage.

3. The method for evaluating transient voltage and current during a type II short-circuit process of an IGBT according to claim 1, characterized in that: The method of establishing a collector current and gate voltage relationship model using the physical characteristics of the chip device includes: The corresponding relationship between the current collector current and the gate voltage is determined according to the gate channel width, channel electron mobility, channel capacitance per unit area, gate channel length, IGBT internal PNP transistor amplification factor and threshold voltage.

4. The method for evaluating transient voltage and current during a type II short-circuit process of an IGBT according to claim 1, characterized in that: The method of establishing a relationship model between the collector-emitter voltage and the chip collector-emitter voltage according to the capacitance effect includes: According to the relationship between the collector-gate capacitance and the collector-gate voltage, and the corresponding relationship between the collector-gate capacitance and the depletion layer width, the corresponding relationship between the collector-emitter voltage and the chip collector-emitter voltage is obtained.

5. The method for evaluating transient voltage and current during a type II short-circuit process of an IGBT according to claim 1, characterized in that: The method of determining the collector-emitter voltage and collector current of the IGBT chip during the second type short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage comprises: According to the correspondence between the collector current and the gate voltage, the correspondence between the collector-emitter voltage and the chip collector-emitter voltage, and the correspondence between the collector current and the commutation loop voltage, the collector-emitter voltage and the collector current of the IGBT chip during a type II short circuit are determined.

6. An IGBT type II short-circuit transient voltage and current evaluation device, characterized in that: The device comprises: The loop voltage characterization module is used to: establish a relationship model between the collector current and the commutation loop voltage according to the circuit parameters in response to the occurrence of a second type short circuit in the IGBT chip until the short circuit current reaches a peak value; The gate voltage characterization module is used to: establish a relationship model between collector current and gate voltage using the physical characteristics of chip devices; The collector-emitter voltage characterization module is used to: establish a relationship model between the collector-emitter voltage and the chip collector-emitter voltage based on the capacitance effect; A voltage and current evaluation module, used to determine the collector-emitter voltage and collector current of the IGBT chip during a type II short circuit according to the relationship model between the collector current and the commutation loop voltage, the relationship model between the collector current and the gate voltage, and the relationship model between the collector-emitter voltage and the chip collector-emitter voltage; The correspondence between the collector-emitter voltage and the collector current during the second type of short circuit of the IGBT chip is The relationship is: Among them, i c Characterizes the collector current, u CE,chip Characterize the chip emitter voltage, w Characterized by gate channel width, μ n Characterize channel electron mobility, C OX represents the capacitance per unit area of ​​the channel, l represents the gate channel length, α pnp Characterizes the internal PNP transistor amplification factor of IGBT, U T Characterize threshold voltage, C GE Characterize gate-emitter capacitance, ε s Characterizes the dielectric constant of the chip material, q characterizes the charge, N D Characterize the carrier concentration, A q Characterize the effective carrier cross-sectional area, v sat,P Characterizes the saturation drift velocity.

7. The IGBT type II short-circuit transient voltage and current evaluation device according to claim 6, characterized in that: The loop voltage characterization module is specifically used for: In response to the IGBT chip having a second type of short circuit until the short circuit current reaches a peak value, the corresponding relationship between the current collector current and the commutation circuit voltage is determined according to the chip loop parasitic inductance, the chip package parasitic inductance and the chip collector-emitter voltage.

8. The IGBT type II short-circuit transient voltage and current evaluation device according to claim 6, characterized in that: The gate voltage characterization module is specifically used for: The corresponding relationship between the current collector current and the gate voltage is determined according to the gate channel width, channel electron mobility, channel capacitance per unit area, gate channel length, IGBT internal PNP transistor amplification factor and threshold voltage.

9. The IGBT type II short-circuit transient voltage and current evaluation device according to claim 6, characterized in that: The collector-emitter voltage characterization module is specifically used for: According to the relationship between the collector-gate capacitance and the collector-gate voltage, and the corresponding relationship between the collector-gate capacitance and the depletion layer width, the corresponding relationship between the collector-emitter voltage and the chip collector-emitter voltage is obtained.

10. The IGBT type II short-circuit transient voltage and current evaluation device according to claim 6, characterized in that: The voltage and current evaluation module is specifically used for: According to the correspondence between the collector current and the gate voltage, the correspondence between the collector-emitter voltage and the chip collector-emitter voltage, and the correspondence between the collector current and the commutation loop voltage, the collector-emitter voltage and the collector current of the IGBT chip during a type II short circuit are determined.

11. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the steps of the method for evaluating transient voltage and current during a type II short-circuit process of an IGBT as described in any one of claims 1 to 5 are implemented.

12. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for evaluating transient voltage and current during a type II short-circuit process of an IGBT as claimed in any one of claims 1 to 5 are implemented.

13. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the steps of the method for evaluating transient voltage and current during a type II short-circuit process of an IGBT as claimed in any one of claims 1 to 5 are implemented.

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