Double-sided cooling type power semiconductor package

Abstract

The present invention relates to a double-sided cooling type power semiconductor package, comprising: a plate-shaped power semiconductor package; the heat dissipation pieces are arranged on the two sides in the thickness direction of the power semiconductor package respectively; and a plurality of cooling channels which are internally provided with flow paths of cooling fluid and are respectively arranged at two sides along the thickness direction of the power semiconductor package, the plurality of cooling channels are respectively provided with a penetrating part, and the penetrating parts penetrate to allow one area of the heat dissipation piece to be inserted therein. As a result, cooling performance can be improved in accordance with the amount of heat generated by the power semiconductor package.

Description

Technical Field

[0001] The invention relates to a double-sided cooling type power semiconductor package. Background Art

[0002] As we all know, semiconductor components are electronic circuit components made of semiconductors.

[0003] Among such semiconductor elements, a power module, a power module, or a power semiconductor package (hereinafter referred to as a “power semiconductor package”) implemented as a package including an IGBT and a diode is used for power control of a power device.

[0004] Typically, the power semiconductor package is widely used in industrial applications such as inverters, uninterruptible power supply devices, welding machines, elevators, and the like, and in the automotive field.

[0005] However, such existing power semiconductor packages have the following problems: a large amount of heat loss is generated during the power conversion process, and such heat loss not only causes the temperature of the power semiconductor package to rise, but also, when the temperature of the power semiconductor package rises and exceeds the operating temperature limit of the power semiconductor package, the function of the power semiconductor package may be damaged.

[0006] In view of such problems, a cooling device for a power semiconductor package is disclosed, in which a cooling channel is formed to contact both surfaces of a power semiconductor package so as to cool the power semiconductor package.

[0007] However, in such a conventional cooling device for a power semiconductor package, the cooling channel is formed long so as to sequentially pass through the top and bottom surfaces of the power semiconductor package, thus causing a problem of increasing the flow resistance of the cooling fluid (cooling water).

[0008] In addition, due to the increasing temperature deviation between the cooling fluid in the cooling channel on the top surface of the power semiconductor package and the cooling fluid in the cooling channel on the bottom surface of the power semiconductor package, insufficient cooling of relatively high temperature areas occurs, thus causing the problem of accelerated forced degradation.

[0009] In addition, the power semiconductor package contacting the downstream area of ​​the cooling channel where the cooling fluid has a relatively high temperature has a relatively insufficient cooling problem compared to the power semiconductor package contacting the upstream area of ​​the cooling channel where the cooling fluid has a relatively low temperature.

[0010] In view of such problems, a double-sided cooling device for a power semiconductor package has been developed that has a local direct cooling flow path, and the direct cooling flow path allows the top and bottom surfaces of the power semiconductor package to directly contact the cooling fluid.

[0011] However, in such a two-sided cooling device of a power semiconductor package with an existing direct cooling flow path, the top and bottom surfaces of the power semiconductor package are in direct contact with the cooling fluid, so that the heat dissipation of the power semiconductor package is limited by the surface area of ​​the power semiconductor package, and thus there is a problem of limitation in lowering the temperature of the power semiconductor package.

[0012] In addition, since the power semiconductor package is constructed as a whole to be immersed in a cooling fluid, the power semiconductor package is provided with a waterproof structure for protecting circuit elements (chips) that generate heat from being affected by the cooling fluid, and the circuit elements are sealed by the waterproof structure. Therefore, there is a problem of difficulty in dissipating heat from the circuit elements.

[0013] In addition, there is a problem that there is a limit to lowering the temperature of the circuit element (chip) causing the heat.

[0014] Prior art literature

[0015] Patent Literature

[0016] Patent Document 1: KR1020170056196 (published on May 23, 2017)

[0017] Patent document 2: KR1020170042067 (published on April 18, 2017) Summary of the invention

[0018] Problem that the invention aims to solve

[0019] Therefore, an object of the present invention is to provide a double-sided cooling type power semiconductor package capable of improving cooling performance according to the amount of heat generated by the power semiconductor package.

[0020] Another object of the present invention is to provide a double-sided cooling type power semiconductor package that can suppress direct contact between the power semiconductor package and a cooling fluid and promote heat dissipation.

[0021] Another object of the present invention is to provide a double-sided cooling type power semiconductor package that can reduce the actual temperature during operation of the power semiconductor package, thereby preventing failures caused by high temperatures from occurring.

[0022] Technical solutions to the problem

[0023] In order to solve the above-mentioned problem, the double-sided cooling type power semiconductor package of the present invention is characterized in that heat sinks are provided on both sides of the power semiconductor package so that the cooling fluid is in direct contact with the heat sink.

[0024] Specifically, heat sinks are provided on both sides of the power semiconductor package. The heat sinks are inserted into the cooling channel and directly contact the cooling fluid, so that the heat dissipation area of ​​the heat sink can be increased corresponding to the heat generated by the power semiconductor package.

[0025] In addition, it is possible to suppress direct contact between the power semiconductor package and the cooling fluid, thereby improving the cooling performance of the power semiconductor package.

[0026] In addition, since the heat dissipation performance of the power semiconductor package is improved, the actual temperature of the circuit element (chip) of the power semiconductor package can be reduced.

[0027] A double-sided cooling power semiconductor package according to an embodiment of the present invention comprises: a plate-shaped power semiconductor package; a heat sink, which is respectively arranged on both sides of the power semiconductor package along the thickness direction of the power semiconductor package; and a plurality of cooling channels, in which flow paths for cooling fluid are arranged, which are respectively arranged on both sides of the power semiconductor package along the thickness direction of the power semiconductor package; a through portion is respectively arranged in the plurality of cooling channels, and the through portion is penetrated so that an area of ​​the heat sink can be inserted.

[0028] Thus, the cooling performance of the power semiconductor package is improved by increasing the heat dissipation area of ​​the heat sink in accordance with the heat generated by the power semiconductor package.

[0029] In addition, since the power semiconductor package can be prevented from directly contacting the cooling fluid, it is possible to prevent the formation of a waterproof structure of the power semiconductor package or to minimize the thickness of the waterproof structure.

[0030] This makes it possible to easily dissipate heat from a plurality of circuit elements (chips) serving as heat sources within the power semiconductor package.

[0031] In addition, since the heat energy generated in the power semiconductor package is quickly and easily transferred to the heat sink, the actual temperature of the power semiconductor package can be kept relatively low during operation.

[0032] According to such a configuration, it is possible to suppress a failure due to high temperature caused by an excessive increase in the temperature of the power semiconductor package.

[0033] In one embodiment of the present invention, each of the plurality of cooling channels is provided with: a main body, one side of which is in contact with the power semiconductor package along the thickness direction; and a cover, which is combined with the other side of the main body and forms a flow path for the cooling fluid with the main body; the penetrating portion is formed by penetrating the main body along the thickness direction.

[0034] Thereby, a plurality of the cooling channels can be easily manufactured.

[0035] In one embodiment of the present invention, a main body seal corresponding to the edge shape of the main body is provided in the contact area between the main body and the cover.

[0036] This can suppress leakage of the cooling fluid through a gap in a contact region between the main body and the cover.

[0037] In one embodiment of the present invention, a main body seal accommodating portion is formed on the main body to accommodate the main body seal.

[0038] Here, the body seal is formed of an elastic member.

[0039] The body seal accommodating portion is configured to accommodate a portion of the body seal, and the other portion of the body seal protrudes to the outside of the body seal accommodating portion and elastically contacts the cover.

[0040] In an embodiment of the present invention, the cooling channel comprises: a lower channel disposed on a lower side of the power semiconductor package; and an upper channel disposed on an upper side of the power semiconductor package.

[0041] Thereby, the bottom surface and the top surface of the power semiconductor package can be cooled simultaneously.

[0042] In one embodiment of the present invention, the lower channel and the upper channel are connected in parallel to a cooling fluid circulation loop in which the cooling fluid circulates.

[0043] Thus, the cooling fluid in the cooling fluid circulation circuit is divided and moves to the lower channel and the upper channel respectively, so that the temperature deviation between the bottom surface and the top surface of the power semiconductor package can be suppressed.

[0044] In one embodiment of the present invention, the lower channel is provided with: an inlet port, which is penetrated for the cooling fluid to flow in; and an outlet port, which is penetrated for the cooling fluid to flow out; the inlet port and the outlet port are respectively connected to the cooling fluid circulation loop.

[0045] Thus, the cooling fluid whose temperature rises after passing through the lower channel and the upper channel moves toward the cooling fluid circulation loop through the outflow port, and the cooling fluid whose temperature drops after passing through the cooling fluid circulation loop and being cooled moves toward the lower channel and the upper channel through the inflow port.

[0046] In one embodiment of the present invention, an expansion portion is provided in the main body, and the expansion portion is recessed along the thickness direction at the periphery of the penetration portion to have a size that is more expanded than the penetration portion. An expansion portion seal is provided inside the expansion portion, and the expansion portion seal is in contact with the heat sink to suppress leakage of the cooling fluid.

[0047] Thus, it is possible to suppress the cooling fluid in the cooling channel from leaking through the penetration portion.

[0048] In one embodiment of the present invention, the heat sink comprises: a plate having a size larger than that of the expansion portion and in contact with the power semiconductor package; and a plurality of heat sinks protruding from the plate in a thickness direction.

[0049] This can suppress temperature deviation on the surface of the power semiconductor package.

[0050] Specifically, when a large temperature deviation occurs on the surface of the power semiconductor package, the region of the expansion sealant in the section where the surface temperature of the power semiconductor package is too high in the entire section of the expansion sealant may be accelerated and forced to deteriorate due to the high temperature.

[0051] In this embodiment, since the heat sink is provided with a plate having a size larger than that of the expansion portion, the surface temperature deviation of the plate becomes relatively small under the action of the conductor. Therefore, the expansion portion seal is in contact with the plate having a relatively uniform surface temperature, thereby being able to suppress the occurrence of forced degradation caused by excessive surface temperature deviation.

[0052] In one embodiment of the present invention, the heat sink is provided with a corrugated heat sink with a corrugated cross section, and the corrugated heat sink is combined with the surface (upper substrate, lower substrate) of the power semiconductor package.

[0053] Therefore, the corrugated heat sink does not have a plate-shaped plate bonded to the surface (upper substrate, lower substrate) of the power semiconductor package, but the corrugated heat sink is directly bonded to the upper substrate and the lower substrate of the power semiconductor package, thereby being able to suppress the increase in thermal resistance caused by the use of the plate.

[0054] Thereby, heat dissipation and cooling of the power semiconductor package can be promoted.

[0055] In one embodiment of the present invention, the inlet port and the outlet port are respectively formed on the cover, and an inlet flow path connected to the inlet port and an outflow flow path connected to the outflow port are provided in the body of the lower channel and the body of the upper channel.

[0056] Thus, the cooling fluid flowing in from the inlet port moves to the flow path of the lower passage and the flow path of the upper passage through the inlet flow path, respectively, and then merges into the outflow flow path and moves to the outflow port.

[0057] In one embodiment of the present invention, protrusions are respectively provided at the inlet side end portion and the outlet side end portion of the lower channel and the inlet side end portion and the outlet side end portion of the upper channel, the protrusions respectively protrude in the thickness direction and contact each other, a power semiconductor package insertion space for inserting the power semiconductor package is formed between the protrusions, and the inlet flow path and the outflow flow path are respectively formed inside the protrusions.

[0058] Thus, cooling of the bottom surface and the top surface of the power semiconductor package and both side surfaces along the board surface direction of the power semiconductor package can be promoted.

[0059] In one embodiment of the present invention, a protrusion seal for suppressing leakage of the cooling fluid is provided at the contact area between the protrusions.

[0060] This can suppress leakage of the cooling fluid from gaps in contact regions of the protrusions.

[0061] In one embodiment of the present invention, the power semiconductor package is composed of a plurality of packages separated along the board surface, and the main body is provided with a plurality of through portions separated along the board surface so that heat sinks of the plurality of power semiconductor packages can be inserted respectively.

[0062] Thereby, a plurality of the cooling channels can be easily manufactured.

[0063] In one embodiment of the present invention, the power semiconductor package is composed of a plurality of packages separated along the thickness direction, and the cooling channel comprises: a lower channel, arranged at the lowermost side of the power semiconductor package composed of the plurality of packages; an upper channel, arranged at the uppermost side of the power semiconductor package composed of the plurality of packages; and a middle channel, arranged between the power semiconductor packages composed of the plurality of packages; the lower channel, the upper channel and the middle channel are formed so that the inlet sides of the cooling fluid of the lower channel, the upper channel and the middle channel are connected to each other, and the outlet sides of the cooling fluid of the lower channel, the upper channel and the middle channel are connected to each other.

[0064] Thus, a plurality of power semiconductor packages spaced apart in the thickness direction can be cooled simultaneously.

[0065] In addition, it is possible to suppress temperature deviation between the bottom surface and the top surface of each of the power semiconductor packages.

[0066] In one embodiment of the present invention, the lower channel has a lower body and a lower cover, the lower body is arranged at the lowermost side of the power semiconductor package composed of the plurality of packages and is formed with the through portion, the lower cover is combined with the bottom of the lower body to form a flow path for the cooling fluid inside, the upper channel has an upper body and an upper cover, the upper body is arranged at the uppermost side of the power semiconductor package composed of the plurality of packages and is provided with the through portion, the upper cover is combined with the top surface of the upper body to form a flow path for the cooling fluid inside, the middle channel is provided with an upper body, a lower body and a middle cover, the upper body is arranged on the upper side of the power semiconductor package composed of the plurality of packages and is provided with the through portion, the lower body is arranged to be separated from the upper side of the upper body, the lower body is combined with the bottom surface of the power semiconductor package composed of the plurality of packages and is provided with the through portion, and the middle cover is formed between the upper body and the lower body to divide the interior of the upper body and the interior of the lower body.

[0067] Thus, the lower channel, the upper channel, and the middle channel can be easily manufactured.

[0068] In one embodiment of the present invention, the lower cover is provided with an inlet port for the cooling fluid to flow in and an outlet port for the cooling fluid to flow out, and the lower body and the upper body are both provided with an inlet flow path connected to the inlet port and an outflow flow path connected to the outflow port.

[0069] Thus, the lower passage, the middle passage, and the upper passage can be connected to communicate with each other.

[0070] In one embodiment of the present invention, the power semiconductor package is composed of a plurality of packages separated along the board surface direction, and the plurality of power semiconductor packages respectively have the lower channel and the upper channel, and the lower channel and the upper channel separated along the board surface direction are each connected by a connector configured along the board surface direction.

[0071] Thus, the cooling fluid can move along the board surface direction and cool the plurality of power semiconductor packages respectively.

[0072] In one embodiment of the present invention, a connector combining portion combined with the connector is disposed in both the upper channel and the lower channel of the power semiconductor package composed of the plurality of connectors, and a connector seal is disposed in the contact area between the connector combining portion and the connector.

[0073] Therefore, when the power semiconductor package is thermally deformed along the board surface direction, the thermal deformation can be absorbed by sliding of the connector, the connector coupling portion, and the connector seal.

[0074] Effects of the Invention

[0075] As described above, according to one embodiment of the present invention, there are a heat sink and a plurality of cooling channels, the heat sinks are respectively arranged on both sides of a power semiconductor package, the plurality of cooling channels are provided with flow paths for cooling fluid inside and are respectively arranged on both sides of the power semiconductor package, the plurality of cooling channels are provided with through portions to accommodate an area of ​​the heat sink, thereby being able to increase the heat dissipation area of ​​the heat sink corresponding to the heat generated by the power semiconductor package, and being able to improve the cooling performance of the power semiconductor package.

[0076] In addition, it is possible to suppress the power semiconductor package from coming into direct contact with the cooling fluid.

[0077] In addition, each of the plurality of cooling channels is provided with a main body and a cover, and the cover is combined with the main body to form a flow path of the cooling fluid, so that the plurality of cooling channels can be easily manufactured.

[0078] In addition, a body seal is provided in a region where the body and the cover contact each other, thereby making it possible to suppress leakage of cooling fluid from between the body and the cover.

[0079] In addition, the plurality of cooling channels include lower channels provided at the lower side of the power semiconductor package and upper channels provided at the upper side of the power semiconductor package, so that the bottom surface and the top surface of the power semiconductor package can be cooled simultaneously.

[0080] In addition, the lower channel and the upper channel are connected to a cooling fluid circulation loop in parallel, so that the cooling fluid is divided and moves to the lower channel and the upper channel respectively, thereby suppressing temperature deviation between the bottom surface and the top surface of the power semiconductor package.

[0081] In addition, the main body is provided with an expansion portion having a size that is larger than the periphery of the penetration portion, and the expansion portion is provided with an expansion portion seal that contacts the heat sink to suppress leakage of the cooling fluid, thereby suppressing leakage of the cooling fluid to the outside through the penetration portion.

[0082] In addition, the heat sink has a plate larger than the expansion portion and a plurality of heat sinks protruding from the plate in the thickness direction, so that the expansion portion seal contacts the plate having a relatively small surface temperature deviation, thereby suppressing the occurrence of forced degradation caused by the temperature rise of the expansion portion seal.

[0083] In addition, the heat sink has a corrugated cross section and is in direct contact with the surface of the power semiconductor package, so that the increase in thermal resistance caused by the plate can be suppressed by eliminating the use of the plate, thereby promoting heat dissipation and cooling of the surface of the power semiconductor package.

[0084] In addition, protrusions are respectively provided at the inlet side end portion and the outlet side end portion of the lower channel and the inlet side end portion and the outlet side end portion of the upper channel, and the protrusions respectively protrude in the thickness direction and contact each other, and a power semiconductor package insertion space for inserting the power semiconductor package is provided between the protrusions, and an inlet flow path and an outlet flow path are formed inside the protrusions, so that the bottom surface and the top surface of the power semiconductor package and the two side surfaces along the board surface direction of the power semiconductor package can be cooled respectively.

[0085] In addition, since a projection seal is provided in the contact region between the projections, leakage of the cooling fluid from gaps in the contact region between the projections can be suppressed.

[0086] In addition, the power semiconductor package is composed of a plurality of packages separated along the board surface direction, and a plurality of through-portions are provided in the main body so that the heat sinks of the plurality of power semiconductor packages can be respectively inserted, thereby making it easy to manufacture a plurality of cooling channels.

[0087] In addition, the power semiconductor package is composed of a plurality of packages separated in the thickness direction, and the cooling channel has a lower channel arranged on the lower side of the power semiconductor package, an upper channel arranged on the upper side of the power semiconductor package, and a middle channel arranged between the power semiconductor packages. The lower channel, the upper channel, and the middle channel are formed so that the inlet and outlet sides of the lower channel, the upper channel, and the middle channel are connected to each other, thereby being able to cool the plurality of power semiconductor packages at the same time.

[0088] In addition, it is possible to suppress temperature deviations on the bottom surfaces and top surfaces of the plurality of power semiconductor packages.

[0089] In addition, the power semiconductor package is composed of a plurality of packages separated along the board surface direction, and the plurality of power semiconductor packages are each provided with the lower channel and the upper channel, and the lower channel and the upper channel separated along the board surface direction are each connected by a connector configured along the board surface direction, thereby enabling the plurality of power semiconductor packages separated along the board surface direction to be cooled simultaneously.

[0090] In addition, a connector coupling portion coupled to the connector is respectively provided in the upper channel and the lower channel of the power semiconductor package composed of the plurality of portions, and a connector seal is provided in the contact area between the connector coupling portion and the connector, thereby preventing the cooling fluid from leaking from the coupling area between the connector coupling portion and the connector.

[0091] In addition, when the plurality of power semiconductor packages are thermally deformed, the deformation can be absorbed by the sliding of the connector, the connector coupling portion, and the connector seal. BRIEF DESCRIPTION OF THE DRAWINGS

[0092] Figure 1 FIG. 4 is a perspective view of a double-sided cooling power semiconductor package according to an embodiment of the present invention.

[0093] Figure 2 yes Figure 1 Cross-sectional view of a double-sided cooling type power semiconductor package.

[0094] Figure 3 yes Figure 2 An enlarged view of multiple cooling channels in the .

[0095] Figure 4 yes Figure 1 A three-dimensional image of a power semiconductor package.

[0096] Figure 5 yes Figure 4 Cross-sectional view of a power semiconductor package in FIG.

[0097] Figure 6 and Figure 7 It is shown Figure 1 1 and 2 are diagrams showing examples of fixing members of a double-sided cooling type power semiconductor package.

[0098] Figure 8 It is used to illustrate Figure 1 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0099] Fig. 9 FIG. 4 is a perspective view of a double-sided cooling power semiconductor package according to another embodiment of the present invention.

[0100] Fig.10 yes Fig. 9 Cross-sectional view of a double-sided cooling type power semiconductor package.

[0101] Fig.11 yes Fig. 9 An isolated perspective view of a double-sided cooling type power semiconductor package.

[0102] Fig.12 yes Fig.11Separated perspective view of the power semiconductor package and heat sink in FIG.

[0103] Fig.13 It is shown Fig.12 FIG. 1 is a diagram of a top view and a side view of a heat sink.

[0104] Figures 14 to 16 They are Fig.13 A top view and a side view of a modified example of the heat sink in FIG.

[0105] Fig.17 yes Fig.11 Isolated stereogram of the upper channel in.

[0106] Fig.18 yes Fig.11 Bottom view of the lower channel in.

[0107] Fig.19 It is used to illustrate Fig. 9 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0108] Fig. 20 FIG. 4 is a perspective view of a double-sided cooling power semiconductor package according to another embodiment of the present invention.

[0109] Fig.21 yes Fig. 20 Cross-sectional view of a double-sided cooling type power semiconductor package.

[0110] Fig. 22 It is used to illustrate Fig. 20 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0111] Fig.23 FIG. 4 is a cross-sectional view of a double-sided cooling power semiconductor package according to another embodiment of the present invention.

[0112] Fig.24 yes Fig.23 Magnified views of the lower and upper channels in .

[0113] Fig.25 yes Fig.23 Magnified view of the power semiconductor package and heat sink.

[0114] Fig.26 yes Fig.24 A three-dimensional diagram of the combined state of the power semiconductor package and the heat sink.

[0115] Fig. 27 yes Fig.24 Separated perspective view of the power semiconductor package and heat sink in FIG.

[0116] Fig.28 It is used to illustrate Fig.23Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0117] Fig.29 FIG. 4 is a cross-sectional view of a double-sided cooling power semiconductor package according to another embodiment of the present invention.

[0118] Fig.30 yes Fig.29 A magnified view of the connector and connector mating area in FIG.

[0119] Fig.31 It is used to illustrate Fig.28 Figure 2 shows the effect of a double-sided cooling type power semiconductor package. DETAILED DESCRIPTION

[0120] Hereinafter, the embodiments disclosed in this specification are described in detail with reference to the accompanying drawings. In this specification, even in different embodiments, the same or similar components are given the same or similar reference numerals, and the previous description is quoted instead of the description thereof. Unless otherwise clearly indicated in the context, the singular expressions used in this specification include plural expressions. In addition, in the process of describing the embodiments disclosed in this specification, when it is judged that the specific description of the relevant known technology will confuse the gist of the embodiments disclosed in this specification, the detailed description of the known technology is omitted. In addition, it should be noted that the drawings are only used to easily understand the embodiments disclosed in this specification, and should not be interpreted as the technical ideas disclosed in this specification being limited by the drawings.

[0121] Figure 1 is a three-dimensional diagram of a double-sided cooling power semiconductor package according to an embodiment of the present invention, Figure 2 yes Figure 1 A cross-sectional view of a double-sided cooling type power semiconductor package, Figure 3 yes Figure 2 A magnified view of the cooling channels in Figure 4 yes Figure 1 A three-dimensional diagram of a power semiconductor package in Figure 5 yes Figure 4 A cross-sectional view of a power semiconductor package in Figure 6 and Figure 7 It is shown Figure 1 1 and 1 are diagrams showing examples of fixing members of a double-sided cooling type power semiconductor package. Figures 1 to 5 As shown, the double-sided cooling type power semiconductor package 100 of this embodiment comprises a power semiconductor package 110 , a heat sink 200 and a plurality of cooling channels 300 .

[0122] The power semiconductor package 110 is provided in a plate shape having a relatively thin thickness.

[0123] For example, the power semiconductor package 110 is configured to have a plurality of circuit elements 1101, an upper substrate 1102 and a lower substrate 1103, wherein the upper substrate 1102 is arranged on one side (the upper side in the drawing) along the thickness direction of the plurality of circuit elements 1101, and the lower substrate 1103 is arranged on the lower side of the plurality of circuit elements 1101.

[0124] The power semiconductor package 110 has a packaging portion 1104 that integrally surrounds (packages) the plurality of circuit elements 1101, the upper substrate 1102, and the lower substrate 1103. For example, the packaging portion 1104 may be implemented in a substantially thin rectangular parallelepiped shape.

[0125] Although not specifically shown in the drawings, as an example, the plurality of circuit elements 1101 are configured to include insulated gate bipolar transistors (IGBT: Insulated Gate Bipolar Transistor) and diodes.

[0126] For example, a plurality of power lines 1105 are provided on one side of the power semiconductor package 110. For example, each of the plurality of power lines 1105 may be implemented in a plate shape.

[0127] For example, a plurality of signal lines 1106 are disposed on the other side of the power semiconductor package 110. For example, each of the plurality of signal lines 1106 may be implemented as a strip.

[0128] Heat sinks 200 are respectively disposed on both side surfaces of the power semiconductor package 110 .

[0129] Thus, heat dissipation of the power semiconductor package 110 can be promoted.

[0130] For example, the heat sink 200 is formed of a metal member.

[0131] Thus, heat energy generated in the power semiconductor package 110 can be easily transferred to the heat sink 200 .

[0132] For example, the heat sink 200 may include a plate 210 and a plurality of heat sinks 220 , wherein the plurality of heat sinks 220 protrude from the plate 210 in a thickness direction.

[0133] For example, the plate 210 is implemented in a rectangular plate shape having a relatively thin thickness.

[0134] For example, the plurality of heat sinks 220 are configured to have a connection portion 2201 connected to the plate 210 and a plurality of pins 2202 protruding from the connection portion 2201 in the thickness direction. The plurality of pins 2202 are respectively arranged at predetermined intervals in the lateral and vertical directions of the connection portion 2201.

[0135] For example, the plate 210 may be configured to have a larger size than the upper substrate 1102 (lower substrate 1103 ) of the power semiconductor package 110 .

[0136] Thus, the surface area of ​​the plate 210 is larger than the surface area of ​​the upper substrate 1102 or the lower substrate 1103 , so that the heat energy transferred from the upper substrate 1102 or the lower substrate 1103 can be easily dissipated.

[0137] In addition, the block plate 210 is in close contact with the entire surface of each of the upper substrate 1102 and the lower substrate 1103 , thereby suppressing a local temperature increase on the surface of the power semiconductor package 110 .

[0138] According to such a configuration, the heat energy of the power semiconductor package 110 is rapidly dissipated, thereby keeping the temperature of the power semiconductor package 110 relatively low, thereby reducing the possibility of failure of the power semiconductor package 110 due to excessive temperature rise (high temperature).

[0139] One side (inner surface in the drawing) of the plate 210 of the heat sink 200 may be closely bonded to the surface of the power semiconductor package 110 .

[0140] For example, a thermal interface material 205 may be inserted into the contact area between the plate 210 and the power semiconductor package 110 .

[0141] For example, the thermally conductive material 205 may be implemented by a thermal compound or thermal grease.

[0142] Thus, the amount of air in the contact area between the surface of the power semiconductor package 110 and the plate 210 of the heat sink 200 is reduced, so that heat energy generated in the power semiconductor package 110 can be easily transferred to the heat sink 200 (plate 210 ).

[0143] The plate 210 of the heat sink 200 may be bonded to the surface of the power semiconductor package 110. Specifically, the plate 210 of the heat sink 200 and the surface of the power semiconductor package 110 may be combined using metal bonding (eg, sintering, soldering, or ultrasonic welding).

[0144] As a result, the amount of air between the plate 210 of the heat sink 200 and the surface of the power semiconductor package 110 is reduced, and the amount of metal as a heat conductor is increased, so that the heat energy of the power semiconductor package 110 can be quickly and easily transferred to the heat sink 200 .

[0145] In this embodiment, in the heat sink 200 , the size and / or quantity of the plate 210 and the plurality of heat sinks 220 may be adjusted in consideration of the heat dissipation of the power semiconductor package 110 .

[0146] When the heat generation of the power semiconductor package 110 increases, the heat dissipation amount can be increased by increasing the size and number of the plate 210 and the plurality of heat sinks 220 of the heat sink 200 .

[0147] On the other hand, a plurality of cooling channels 300 are disposed on both sides of the power semiconductor package 110 .

[0148] like Figure 3 As shown, a flow path 3201 of a cooling fluid is disposed inside each of the plurality of cooling channels 300 .

[0149] For example, the plurality of cooling channels 300 may be disposed on both sides along the thickness direction of the power semiconductor package 110 .

[0150] In this embodiment, each of the plurality of cooling channels 300 is respectively provided with a through portion 3101 to respectively accommodate a region of the heat sink 200 disposed on both sides of the power semiconductor package 110 .

[0151] For example, each of the plurality of cooling channels 300 is constructed to have a main body 310 and a cover 320, wherein one side of the main body 310 contacts the power semiconductor package 110 along the thickness direction, and the cover 320 is combined with the other side of the main body 310, and the cover 320 and the main body 310 form a flow path 3201 for the cooling fluid.

[0152] For example, the cover 320 may be configured to have a thickness thinner than that of the body 310 .

[0153] A flow path 3201 for the cooling fluid is formed inside the cover 320 .

[0154] A body seal 330 is provided at a contact area between the cover 320 and the body 310 .

[0155] For example, the body sealer 330 may be formed of an airtight member having elasticity.

[0156] The body sealer 330 may be implemented in a ring shape corresponding to the edge shape of the body 310 .

[0157] For example, the body seal 330 may be formed of a rubber member or a silicone member.

[0158] Thus, it is possible to prevent the internal cooling fluid from leaking to the outside through the gap between the body 310 and the cover 320 .

[0159] The main body 310 is provided with the penetration portion 3101 .

[0160] For example, the penetration portion 3101 has a rectangular shape.

[0161] The penetration portion 3101 is formed to penetrate the main body 310 along a thickness direction.

[0162] Specifically, the plurality of cooling channels 300 have a lower channel 301 and an upper channel 302, wherein the lower channel 301 is disposed on one side (the lower side in the drawing) of the power semiconductor package 110, and the upper channel 302 is disposed on the other side (the upper side in the drawing) of the power semiconductor package 110.

[0163] Although not specifically shown in the drawings, the main bodies 310 and the covers 320 of the lower channel 301 and the upper channel 302 may be fixedly coupled together using a plurality of fixing members arranged (formed) spaced apart from each other along the edges.

[0164] In addition, the lower channel 301 and the upper channel 302 may be fixedly coupled together as a whole using a plurality of fixing members (not shown).

[0165] Here, for example, Figure 6As shown, the plurality of fixing members 350 may include bolts 352 and nuts 353 threadedly coupled to each other. Specifically, protrusions 351 are formed on the upper channel 302 and the lower channel 301, respectively, and the protrusions 351 are provided with bolt receiving holes 3511 for the bolts 352 to be received and coupled. After the bolts 352 are coupled to the protrusions 351, the nuts 353 can be tightened to fix the upper channel 302 and the lower channel 301 to each other as a whole.

[0166] In addition, for example, Figure 7 As shown, the plurality of fixing members 360 may also be configured to have hooks 3601 and hook buckle protrusions 3602 that are engaged with each other. Specifically, a hook 3601 extending in the thickness direction is formed on any one of the upper channel 302 and the lower channel 301, and a hook buckle protrusion 3602 is formed on the other of the upper channel 302 and the lower channel 301, so that the hook 3601 can be engaged with each other. Therefore, the upper channel 302 and the lower channel 301 can be fixedly combined into one body by the engagement of the hook 3601 with the hook buckle protrusion 3602.

[0167] The lower channel 301 and the upper channel 302 are configured to include the main body 310 and the cover 320 , respectively.

[0168] Here, if Figure 6 As shown, the main body 310 and the cover 320 of the upper channel 302 and the lower channel 301 can be configured to form the protrusions 351 respectively, and the main body 310 and the cover 320 can be fixedly combined into one by combining the bolts 352 and the nuts 353 with the protrusions 351. Figure 7 As shown, the main body 310 and the cover 320 of the lower channel 301 and the upper channel 302 can also be constructed to have hooks 3601 and hook snap protrusions 3602 that bite into each other, so that the main body 310 and the cover 320 can be bitten by the hooks 3601 and the hook snap protrusions 3602, thereby being combined into one body.

[0169] An inlet port 3203 for the cooling fluid to flow into is provided at one side of the lower channel 301 .

[0170] An outflow port 3204 for the cooling fluid to flow out is provided on the other side of the lower channel 301 .

[0171] The inflow port 3203 and the outflow port 3204 are respectively provided at the cover 320 of the lower channel 301 .

[0172] The inflow port 3203 and the outflow port 3204 are respectively formed through the cover 320 of the lower channel 301 in the thickness direction.

[0173] The lower channel 301 and the upper channel 302 are configured so that the cooling fluid flows into the interior from one end along the length direction, and the cooling fluid in the interior flows out from the other end to the outside.

[0174] Protrusions 3105 that protrude in the thickness direction and contact each other are provided at the inflow-side ends of the lower channel 301 and the upper channel 302 and at the outflow-side ends of the lower channel 301 and the upper channel 302 .

[0175] Specifically, the protrusions 3105 are formed on the body 310 of the lower channel 301 and the body 310 of the upper channel 302, respectively.

[0176] An insertion space 315 for inserting the power semiconductor package 110 is formed between the protrusions 3105 .

[0177] by Figure 2 As a reference, the protrusions 3105 are respectively provided on both sides (the left side and the right side in the drawing) of the power semiconductor package 110 .

[0178] The protrusions 3105 are respectively disposed on both sides along the board direction of the power semiconductor package 110 .

[0179] A power semiconductor package insertion space 315 for inserting the power semiconductor package 110 is provided between the two protrusions 3105 .

[0180] An inflow channel 3108 communicating with the inflow port 3203 is formed inside the protrusion 3105 provided at the inflow side end portion of the protrusion 3105 .

[0181] The inflow flow path 3108 is formed to penetrate the inside of the protruding portion 3105 of the lower channel 301 and the inside of the protruding portion 3105 of the upper channel 302 respectively.

[0182] The inflow flow path 3108 is configured to communicate with the flow path 3201 inside the lower channel 301 and the flow path 3201 inside the upper channel 302 .

[0183] Thus, the flow path 3201 inside the lower channel 301 and the flow path 3201 inside the upper channel 302 are connected in parallel to each other.

[0184] According to such a configuration, the refrigerant flowing into the inlet port 3203 is branched and moves to the flow path 3201 inside the lower passage 301 and the flow path 3201 inside the upper passage 302 .

[0185] An outflow passage 3109 communicating with the outflow port 3204 is formed inside the protrusion 3105 provided at the outflow-side end of the protrusion 3105 .

[0186] The outflow passage 3109 is formed to penetrate the inside of the protruding portion 3105 of the lower channel 301 and the inside of the protruding portion 3105 of the upper channel 302 respectively.

[0187] In the present embodiment, flow paths 3201 of the cooling fluid are formed on both sides (left and right sides in the drawing) of the power semiconductor package insertion space 315 , thereby promoting cooling of both sides of the power semiconductor package 110 .

[0188] Protrusion seals 3107 are respectively provided at the contact areas of the protrusions 3105 .

[0189] A protrusion seal accommodating portion 3106 is provided in the contact area between the protrusions 3105 so as to accommodate the protrusion seal 3107 .

[0190] The protrusion seal accommodating portion 3106 is respectively disposed on the protrusion 3105 of the lower channel 301 and the protrusion 3105 of the upper channel 302 .

[0191] On the other hand, the main body 310 of each cooling channel 300 (the lower channel 301 and the upper channel 302 ) is provided with an expansion portion 3102 , which is recessed along the thickness direction at the periphery of the penetration portion 3101 to have a size that is larger than the penetration portion 3101 .

[0192] In this embodiment, the plate 210 of the heat dissipation element 200 is configured to have a larger size than the expansion portion 3102 .

[0193] An expansion portion seal 3103 is disposed inside the expansion portion 3102 , and the expansion portion seal 3103 is in contact with the heat sink 200 to suppress leakage of the cooling fluid.

[0194] Thus, it is possible to suppress the cooling fluid in the lower passage 301 and the upper passage 302 from leaking to the outside through the penetration portion 3101 .

[0195] In addition, the expansion portion seal 3103 is in contact with the entire area of ​​the plate 210 of the heat sink 200 , thereby preventing forced degradation due to high temperature caused by excessive local temperature rise.

[0196] The plate 210 of the heat sink 200 is not only in direct contact with the cooling fluid, but also utilizes a plurality of heat sinks 220 to quickly transfer heat energy, thereby suppressing temperature rise. Thus, deformation of the expansion seal 3103 caused by high temperature due to temperature rise can be suppressed, thereby extending the service life.

[0197] Figure 8 It is used to illustrate Figure 1 Figure 1 shows the effect of double-sided cooling on power semiconductor packages. Figure 8 As shown, the lower channel 301 is arranged at the lower side of the power semiconductor package 110, and the heat sink 200 at the lower side of the power semiconductor package 110 can be inserted into the through portion 3101 combined with the lower channel 301. The heat sink 220 of the heat sink 200 at the lower side of the power semiconductor package 110 is inserted into the inside of the through portion 3101 of the lower channel 301, and the ends are respectively arranged in the flow path 3201 inside the lower channel 301.

[0198] The upper channel 302 may be combined so that the heat sink 200 on the upper side of the power semiconductor package 110 can be inserted into the through portion 3101 of the upper channel 302. The heat sinks 220 of the heat sink 200 on the upper side of the power semiconductor package 110 are respectively disposed in the flow path 3201 inside the upper channel 302 through the through portion 3101 of the upper channel 302.

[0199] The inlet port 3203 and the outlet port 3204 of the lower channel 301 are respectively connected to a cooling fluid circulation loop 400 for circulating the cooling fluid.

[0200] The cooling fluid circulation circuit 400 is provided with a pipe 403 for moving the cooling fluid.

[0201] In this embodiment, for example, the double-sided cooling type power semiconductor package 100 may be provided in an inverter of an electric vehicle. The cooling fluid circulation loop 400 may be provided in the electric vehicle, and the cooling fluid may be composed of cooling water of the electric vehicle.

[0202] The cooling fluid circulation loop 400 is provided with a heat exchanger 401 for cooling the cooling fluid through heat exchange.

[0203] A pump 402 is provided in the cooling fluid circulation loop 400 to facilitate movement of the cooling fluid.

[0204] The outflow port 3204 is connected to the upstream side of the heat exchanger 401 based on the moving direction of the cooling fluid moved by the pump 402. The inflow port 3203 of the lower passage 301 is connected to the downstream side of the heat exchanger 401.

[0205] When the operation starts, the power semiconductor package 110 generates heat energy due to the heat generated by the plurality of circuit elements 1101. The heat energy generated in the plurality of circuit elements 1101 is transferred to the lower substrate 1103 and the upper substrate 1102 respectively, and the heat energy transferred to the lower substrate 1103 and the upper substrate 1102 is transferred to the heat sink 200 respectively.

[0206] If the pump 402 starts to operate, the pump 402 operates, and if the pump 402 operates, the cooling fluid of the cooling fluid circulation loop 400 moves.

[0207] The cooling fluid of the cooling fluid circulation loop 400 passes through the heat exchanger 401 and is cooled by heat exchange. The cooling fluid cooled in the heat exchanger 401 flows into the interior of the lower channel 301 through the inlet port 3203. A portion of the inflowing cooling fluid passes through the internal flow path 3201 of the lower channel 301 and absorbs the heat energy generated in the power semiconductor package 110. The cooling fluid that absorbs the heat energy moves toward the outlet port 3204 in a state of increased temperature.

[0208] Another part of the cooling fluid flowing in through the inlet port 3203 moves along the flow path 3201 of the upper channel 302 via the inlet flow path 3108. The cooling fluid moving along the flow path of the upper channel 302 absorbs heat energy generated in the power semiconductor package 110 to cool the power semiconductor package 110. The cooling fluid that absorbs heat energy and increases in temperature in the interior of the upper channel 302 moves toward the outflow port 3204 through the outflow flow path 3109.

[0209] The cooling fluid flowing out through the outlet port 3204 repeatedly passes through the heat exchanger 401 and is cooled, then flows into the outlet port 3204 and passes through the lower channel 301 and the upper channel 302 respectively and absorbs the heat energy generated in the power semiconductor package 110. By repeating this process, the power semiconductor package 110 is continuously cooled.

[0210] Fig. 9 is a three-dimensional diagram of a double-sided cooling power semiconductor package according to another embodiment of the present invention, Fig.10 yes Fig. 9 A cross-sectional view of a double-sided cooling power semiconductor package. Fig. 9 and Fig.10 As shown, the double-sided cooling type power semiconductor package 100 a of the present embodiment comprises a power semiconductor package 110 , a heat sink 200 , and a plurality of cooling channels 300 a .

[0211] The power semiconductor package 110 has a plate shape.

[0212] For example, the power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0213] The power semiconductor package 110 has a packaging portion 1104 that integrally surrounds (packages) the plurality of circuit elements 1101, the upper substrate 1102, and the lower substrate 1103. For example, the packaging portion 1104 is implemented in a substantially thin rectangular parallelepiped shape.

[0214] A plurality of power lines 1105 are disposed on one side of the power semiconductor package 110 , and a plurality of signal lines 1106 are disposed on the other side.

[0215] In the present embodiment, the power semiconductor package 110 is configured to include a plurality of power semiconductor packages 110 spaced apart from each other along a board surface direction.

[0216] For example, the plurality of power semiconductor packages 110 may include a first power semiconductor package 111 , a second power semiconductor package 112 , and a third power semiconductor package.

[0217] In the present embodiment, although a case where the plurality of power semiconductor packages 110 are provided in three is illustrated, this is only an example and the present invention is not limited thereto.

[0218] Heat sinks 200 are respectively disposed on both sides of each of the power semiconductor packages 110 .

[0219] For example, the heat dissipation member 200 includes a relatively thin rectangular plate 210 and a plurality of heat dissipation fins 220 protruding along a thickness direction of the plate 210 .

[0220] A plurality of cooling channels 300 a are disposed on both sides of the power semiconductor package 110 , and flow paths 3201 of a cooling fluid are disposed inside the plurality of cooling channels 300 a .

[0221] Each of the plurality of cooling channels 300 a is provided with a through portion 3101 for a region of the heat sink 200 to be inserted into.

[0222] In this embodiment, for example, the plurality of cooling channels 300 a include lower channels 301 a disposed at the lower side of the power semiconductor package 110 and upper channels 302 a disposed at the upper side of the power semiconductor package 110 .

[0223] Each of the plurality of cooling channels 300a (lower channel 301a, upper channel 302a) is constructed to have a main body 310a and a cover 320a, one side of the main body 310a is in contact with the power semiconductor package 110 along the thickness direction, and the cover 320a is combined with the other side of the main body 310a, and the cover 320a and the main body 310a form a flow path 3201 for the cooling fluid.

[0224] Although not specifically shown in the drawings, the main body 310a and the cover 320a of the lower channel 301a may be configured to be fixed by a plurality of fixing members (eg, Figure 7 The main body 310a and the cover 320a of the upper channel 302a may be formed by using a plurality of fixing members (for example, Figure 7 In addition, the lower channel 301a and the upper channel 302a can be constructed by using a plurality of fixing members (for example, Figure 8 The hook and hook buckle protrusion in the middle are combined into one.

[0225] Fig.11 yes Fig. 9 The separated three-dimensional image of the double-sided cooling type power semiconductor package in Fig.12 yes Fig.11 Separated perspective view of the power semiconductor package and heat sink in the Fig.13 It is shown Fig.12 Figure 1 shows a top view and a side view of a heat sink. Figures 14 to 16 They are Fig.13 A top view and a side view of a modified example of the heat sink in FIG. Fig.11 and Fig.12 As shown, the lower channel 301a and the upper channel 302a are provided with a plurality of through-portions 3101 for inserting the first power semiconductor package 111, the second power semiconductor package 112 and the third power semiconductor package 113. In this embodiment, the plurality of through-portions 3101 are configured as three.

[0226] The main bodies 310a of the lower channel 301a and the upper channel 302a are respectively provided with expansion parts 3102 that are recessed along the thickness direction at the peripheries of the plurality of penetration parts 3101 , and the expansion parts 3102 have a size that is larger than that of the penetration parts 3101 .

[0227] An expansion portion seal 3103 is disposed inside the expansion portion 3102 , and the expansion portion seal 3103 suppresses leakage of the cooling fluid by contacting the heat sink 200 .

[0228] The lower passage 301a and the upper passage 302a are configured such that a cooling fluid flows into the interior from one end portion along the length direction, and the cooling fluid in the interior flows out to the outside from the other end portion.

[0229] Protrusions 3105 are provided at the inflow-side ends of the lower channel 301a and the upper channel 302a and at the outflow-side ends of the lower channel 301a and the upper channel 302a, respectively. The protrusions 3105 protrude in the thickness direction and contact each other.

[0230] An inflow channel 3108 is formed inside the protruding portion 3105 provided at the inflow-side end portion.

[0231] The inflow flow path 3108 is communicatively connected to the flow path 3201 inside the lower channel 301 a and the flow path 3201 of the upper channel 302 a .

[0232] Thus, the flow path 3201 inside the lower channel 301a and the flow path 3201 of the upper channel 302a are connected in parallel to each other.

[0233] An outflow channel 3109 is formed inside the protruding portion 3105 provided at the outflow side end.

[0234] Protrusion seals 3107 for suppressing leakage of cooling fluid are respectively provided at contact areas of the protrusions 3105 .

[0235] A protrusion seal accommodating portion 3106 is provided in the contact area between each of the protrusions 3105 to accommodate the protrusion seal 3107 .

[0236] The protrusion seal accommodating portions 3106 are communicated with the inflow flow path 3108 (outflow flow path 3109 ), and are respectively recessed to have a size that is larger than the inflow flow path 3108 (outflow flow path 3109 ).

[0237] That is, the protrusion 3105 of the main body 310a of the lower channel 301a is recessed downward to form the protrusion seal accommodating portion 3106, and the protrusion 3105 of the main body 310a of the upper channel 302a is recessed upward to form the protrusion seal accommodating portion 3106.

[0238] like Fig.12As shown, the power semiconductor package 110 is configured as a rectangular plate with a relatively thin thickness. A plurality of power lines 1105 are provided on one side of the power semiconductor package 110, and a plurality of signal lines 1106 are provided on the other side. Each of the plurality of power lines 1105 can be implemented as a thin plate, and each of the plurality of signal lines 1106 can be implemented as a strip.

[0239] The heat sinks 200 are respectively disposed on both side surfaces of the power semiconductor package 110 .

[0240] like Fig.13 As shown, the heat sink 200 has a rectangular plate 210 and a plurality of heat sinks 220 protruding from the plate 210 in the thickness direction. The plurality of heat sinks 220 have a coupling portion 2201 that contacts and couples with the plate 210 and a plurality of pins 2202 protruding from the coupling portion 2201. For example, each of the plurality of pins 2202 may be implemented as a rod with a circular cross section.

[0241] Here, the coupling portion 2201 is configured to be a rectangular shape smaller than the plate 210. For example, the plurality of pins 2202 may be configured to have different numbers according to the columns. In addition, the plurality of pins 2202 may be configured to have pins arranged in a zigzag shape between the pins of the previous column in a column arranged later than the previous column. The plurality of pins 2202 may also be configured to have different heights.

[0242] In this embodiment, it is shown that the heights of the pins 2202 arranged on both sides perpendicular to the moving direction of the cooling fluid among the plurality of pins 2202 are lower, but this is only an example and the present invention is not limited thereto.

[0243] On the other hand, Fig.14 As shown, the heat sink 200 a includes a rectangular plate-shaped plate 210 and a plurality of heat sink fins 220 a protruding from a surface of the plate 210 in a thickness direction.

[0244] In this embodiment, the plurality of heat sinks 220 a have a plurality of protruding portions 222 protruding from the plate 210 and a coupling portion 223 coupled to the plate 210 .

[0245] For example, the protrusions 222 and the coupling portions 223 are formed alternately with each other in a direction perpendicular to the moving direction of the cooling fluid.

[0246] For example, the protrusion 222 has two side walls 2221 and a connection portion 2222 connecting the upper ends of the two side walls 2221 , so as to form a flow path 3201 of the cooling fluid inside.

[0247] The protrusion 222 may be bent along the moving direction of the cooling fluid to form a wave shape.

[0248] As a result, the surface area of ​​the protrusion 222 is increased, thereby increasing the heat exchange amount of the cooling fluid.

[0249] like Fig.15 As shown, the heat sink 200b has a rectangular plate-shaped plate 210 and a plurality of heat sinks 220b protruding from the plate 210 and extending in one direction.

[0250] The plurality of heat sinks 220 b are spaced apart from each other at a predetermined interval S.

[0251] In this embodiment, the interval S between the plurality of heat sinks 220 is greater than the width w of the cross section of the plurality of heat sinks 220 .

[0252] Therefore, the heat sink 200 of the present embodiment can be formed by extrusion, so the heat sink 200 b can be easily manufactured.

[0253] In this embodiment, the extension direction of the plurality of heat sinks 220b may be arranged along the moving direction of the cooling fluid.

[0254] According to such a configuration, the cooling fluid can be moved between the plurality of heat sinks 220 b , and heat can be exchanged between the cooling fluid and the plurality of heat sinks 220 b .

[0255] like Fig.16 As shown, the heat sink 200c has a rectangular plate-shaped plate 210 and a plurality of heat sinks 220c protruding from the plate 210 in a thickness direction and extending in one direction.

[0256] The plurality of heat sinks 220c are spaced apart from each other at predetermined intervals.

[0257] In this embodiment, the interval S between the plurality of heat sinks 220 may be formed to be less than the width w of the cross section of the plurality of heat sinks 220 .

[0258] Thus, the number of the plurality of heat sinks 220c per unit area can be increased, thereby significantly increasing the amount of heat exchange between the plurality of heat sinks 220c and the cooling fluid.

[0259] On the other hand, as described above, the heat sink 200 may be combined with the surface of the power semiconductor package 110 by metal bonding (eg, sintering or soldering or ultrasonic welding).

[0260] In addition, a thermal conductive material 205 may be inserted into the contact area between the heat sink 200 and the power semiconductor package 110 .

[0261] Fig.17 yes Fig.11 A perspective view of the upper channel in FIG. Fig.17 As shown, the upper channel 302a has a main body 310a and a cover 320a, one side of the main body 310a contacts the power semiconductor package 110, and the cover 320a is combined with the other side of the main body 310a, and the cover 320a and the main body 310a form a flow path 3201 for the cooling fluid.

[0262] A body seal 330 a is provided at a contact area between the body 310 a and the cover 320 a .

[0263] The main body seal 330a is implemented by an elastic airtight member.

[0264] For example, the body seal 330a is formed of a rubber member.

[0265] For example, the body sealer 330 a has a ring shape corresponding to an edge shape of the body 310 a .

[0266] For example, a main body seal accommodating portion 3104 is provided in the main body 310a so that the main body seal 330a can be inserted therein.

[0267] The main body seal 330 a is configured such that one side (the bottom in the drawing) can be accommodated in the main body seal accommodating portion 3104 , and the other side can protrude to the outside of the main body seal accommodating portion 3104 .

[0268] The area of ​​the body seal 330a protruding from the body seal accommodating portion 3104 is in close contact with the cover 320a of the upper passage 302a. Thus, leakage of the cooling fluid from between the body 310a and the cover 320a of the upper passage 302a can be suppressed.

[0269] Protrusions 3105 are formed at the inflow side end and the outflow side end of the main body 310a of the upper channel 302a to protrude downward.

[0270] An inflow channel 3108 and an outflow channel 3109 are formed through the protrusion 3105 .

[0271] Fig.18 yes Fig.11 Bottom view of the lower channel in Fig.19 It is used to illustrate Fig. 9Figure 1 shows the effect of double-sided cooling on power semiconductor packages. Fig.18 As shown, the lower channel 301a is provided with an inlet port 3203 for the cooling fluid to flow in and an outlet port 3204 for the cooling fluid to flow out.

[0272] The inflow port 3203 and the outflow port 3204 may be formed through the cover 320 a of the lower channel 301 a .

[0273] like Fig.19 As shown, the heat sinks 200 combined with the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 may be inserted into the through portion 3101 of the lower channel 301 a .

[0274] The upper channel 302 a is combined on the upper side of each of the power semiconductor packages 110 , so that each heat sink 200 can be inserted into the corresponding through portion 3101 .

[0275] On the other hand, the double-sided cooling type power semiconductor package 100 a may be connected to a cooling fluid circulation loop 400 .

[0276] The cooling fluid circulation circuit 400 includes a pipe 403 for moving the cooling fluid.

[0277] The inlet port 3203 and the outlet port 3204 of the lower channel 301 a are connected to the cooling fluid circulation loop 400 , respectively.

[0278] For example, the cooling fluid circulation loop 400 includes a heat exchanger 401 for cooling the cooling fluid and a pump 402 for facilitating movement of the cooling fluid.

[0279] When the operation starts, the plurality of power semiconductor packages 110 generate heat energy respectively due to the heat generation of the plurality of circuit elements 1101. The heat energy is transferred to the heat sink 200 on the lower side of each power semiconductor package 111, 112, 113 and the heat sink 200 on the upper side of each power semiconductor package 111, 112, 113.

[0280] When the operation starts, the pump 402 of the cooling fluid circulation circuit 400 operates to move the cooling fluid. The cooling fluid cooled in the heat exchanger 401 flows in through the inlet port 3203 of the lower channel 301a. A portion of the cooling fluid flowing in from the inlet port 3203 moves along the inside of the lower channel 301a. Another portion of the cooling fluid flowing in from the inlet port 3203 moves toward the inside of the upper channel 302a.

[0281] The cooling fluid in the lower channel 301 a absorbs heat energy by contacting the heat sink 200 disposed on the bottom surfaces of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 , thereby cooling the heat sink 200 .

[0282] The cooling fluid in the upper channel 302 a absorbs heat energy by contacting the heat sink 200 disposed on the top surfaces of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 , thereby cooling the heat sink 200 .

[0283] Thus, it is possible to suppress temperature deviation between the bottom surface and the top surface of each of the power semiconductor packages 110 .

[0284] The cooling fluid passing through the lower channel 301 a and the cooling fluid in the upper channel 302 a flows out of the lower channel 301 a through the outflow port 3204 and moves toward the cooling fluid circulation circuit 400 .

[0285] The cooling fluid moved to the cooling fluid circulation loop 400 passes through the heat exchanger 401 and is cooled by heat dissipation. The cooled cooling fluid flows into the inlet port 3203 and moves toward the lower channel 301a and the upper channel 302a respectively and absorbs heat energy. By repeating this process, the plurality of power semiconductor packages 110 are continuously cooled.

[0286] Fig. 20 is a three-dimensional diagram of a double-sided cooling power semiconductor package according to another embodiment of the present invention, Fig.21 yes Fig. 20 A cross-sectional view of a double-sided cooling type power semiconductor package, Fig. 22 It is used to illustrate Fig. 20 Figure 1 shows the effect of double-sided cooling on power semiconductor packages. Fig. 20 and Fig.21 As shown, the double-sided cooling type power semiconductor package 100 b of the present embodiment comprises a power semiconductor package 110 , a heat sink 200 , and a plurality of cooling channels 300 b .

[0287] For example, the power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0288] The power semiconductor package 110 has a packaging portion 1104 that integrally surrounds (packages) the plurality of circuit elements 1101, the upper substrate 1102, and the lower substrate 1103. For example, the packaging portion 1104 is implemented in a substantially thin rectangular parallelepiped shape.

[0289] For example, the power semiconductor package 110 is configured as a plurality of packages separated along the thickness direction.

[0290] In the present embodiment, the power semiconductor package 110 includes a first power semiconductor package 111 , a second power semiconductor package 112 , and a third power semiconductor package 113 which are separated along a thickness direction.

[0291] Heat sinks 200 are respectively disposed on both side surfaces of the power semiconductor package 110 .

[0292] For example, the heat sink 200 includes a plate 210 in contact with a surface of the power semiconductor package 110 and a plurality of heat sinks 220 protruding from the surface of the plate 210 in a thickness direction.

[0293] For example, the plurality of cooling channels 300 b have a lower channel 301 b disposed at the lowermost side of the plurality of power semiconductor packages 110 .

[0294] For example, the plurality of cooling channels 300 b have an upper channel 302 b disposed at the uppermost side of the plurality of power semiconductor packages 110 .

[0295] For example, the plurality of cooling channels 300 b have a middle channel 303 b disposed in the middle of the plurality of power semiconductor packages 110 .

[0296] Specifically, the lower channel 301 b includes a lower body 301 b 1 in contact with the lower side of the power semiconductor package 110 and a lower cover 301 b 2 combined with the lower body 301 b 1 to form a flow path 3201 of the cooling fluid.

[0297] The lower channel 301 b is disposed at a lower side of the first power semiconductor package 111 .

[0298] A body sealer 330 b is provided at a contact area between the lower body 301 b 1 and the lower cover 301 b 2 , and the body sealer 330 b has a shape corresponding to that of the lower body 301 b 1 .

[0299] Thus, it is possible to suppress leakage of the cooling fluid from between the lower body 301b1 and the lower cover 301b2.

[0300] For example, the upper channel 302 b includes an upper body 302 b 1 disposed on the uppermost side of the plurality of power semiconductor packages 110 and an upper cover 302 b 2 coupled to the upper body 302 b 1 to form a flow path 3201 of a cooling fluid therein.

[0301] A body seal 330 b is provided at a contact area between the upper body 302 b 1 and the upper cover 302 b 2 . The body seal 330 b has a shape corresponding to the shape of the upper body 302 b 1 .

[0302] Thus, it is possible to suppress leakage of the cooling fluid from between the upper body 302b1 and the upper cover 302b2.

[0303] The upper channel 302 b is disposed on an upper side of the third power semiconductor package 113 .

[0304] The upper body 302 b 1 is provided with a through portion 3101 for the heat sink 200 of the power semiconductor package 110 to be inserted.

[0305] The middle channel 303 b is disposed in the middle of each of the plurality of power semiconductor packages 110 spaced apart in the thickness direction.

[0306] In this embodiment, the intermediate channel 303b has a first intermediate channel 3031b and a second intermediate channel 3032b, wherein the first intermediate channel 3031b is arranged between the first power semiconductor package 111 and the second power semiconductor package 112, and the second intermediate channel 3032b is arranged between the second power semiconductor package 112 and the third power semiconductor package 113.

[0307] For example, the intermediate channel 303b has an upper body 303b1, a lower body 303b2 and a middle cover 303b3, the upper body 303b1 is arranged on the upper side of a plurality of power semiconductor packages 110 separated along the thickness direction, the lower body 303b2 is separated from the upper side of the upper body 303b1, and the middle cover 303b3 is inserted between the upper body 303b1 and the lower body 303b2.

[0308] The upper body 303 b 1 of the middle channel 303 b is disposed on an upper side of the first power semiconductor package 111 and an upper side of the second power semiconductor package 112 , respectively.

[0309] The lower body 303 b 2 of the middle channel 303 b is disposed at the lower side of the second power semiconductor package 112 and the lower side of the third power semiconductor package 113 , respectively.

[0310] The middle cover 303 b 3 of the middle channel 303 b is disposed between the first power semiconductor package 111 and the second power semiconductor package 112 and between the second power semiconductor package 112 and the third power semiconductor package 113 .

[0311] Body seals 330b are provided between the lower body 303b1 of the intermediate passage 303b and the intermediate cover 303b3 and between the intermediate cover 303b3 and the upper body 303b1, respectively.

[0312] Thereby, leakage of the cooling fluid can be suppressed.

[0313] In this embodiment, if Fig. 20 As shown, the lower body 303b2, the middle cover 303b3 and the upper body 303b1 are configured to have the same outer surface.

[0314] In this embodiment, the respective lower bodies 301b1, 303b2 and the respective upper bodies 302b1, 303b1 of the lower channel 301b, the upper channel 302b and the middle channel 303b all have a through portion 3101 for the heat sinks 200 respectively arranged on the bottom and top surfaces of each of the power semiconductor packages 110 to be inserted respectively.

[0315] An expansion portion 3102 that is recessed along the thickness direction is disposed at the periphery of each of the penetration portions 3101 , and the expansion portion 3102 has a size that is larger than that of the penetration portion 3101 .

[0316] An expansion portion seal 3103 is disposed inside each of the expansion portions 3102 , and the expansion portion seal 3103 suppresses leakage of the cooling fluid by contacting with the corresponding heat sink 200 .

[0317] The plurality of cooling channels 300 b have inlet ports 3203 to allow the cooling fluid to flow into the interior.

[0318] The plurality of cooling channels 300 b have outflow ports 3204 to allow the cooling fluid inside to flow out.

[0319] For example, the inflow port 3203 is provided in the lower channel 301b.

[0320] For example, the outflow port 3204 is disposed in the lower channel 301 b.

[0321] For example, the inflow port 3203 and the outflow port 3204 are respectively formed through the lower cover 301b2 of the lower channel 301b.

[0322] Inlet flow paths 3108 are formed in the lower bodies 301b1, 303b2 and the upper bodies 302b1, 303b1 of the lower channel 301b, the middle channel 303b, and the upper channel 302b, respectively. The inlet flow paths 3108 penetrate in the thickness direction corresponding to the inlet ports 3203.

[0323] Outflow passages 3109 are formed in the lower bodies 301b1, 303b2 and the upper bodies 302b1, 303b1 of the lower channel 301b, the middle channel 303b, and the upper channel 302b, respectively. The outflow passages 3109 penetrate in the thickness direction corresponding to the outflow ports 3204.

[0324] The lower bodies 301b1, 303b2 and the upper bodies 302b1, 303b1 of the lower channel 301b, the middle channel 303b and the upper channel 302b are respectively provided with protrusions 3105, which protrude in the thickness direction and contact each other.

[0325] Power semiconductor package insertion spaces 315 for inserting the power semiconductor packages 110 are respectively formed between the protrusions 3105 on both sides.

[0326] The protrusions 3105 are respectively provided at the inflow side end portion and the outflow side end portion of each of the lower bodies 301b1 and 303b2 and the inflow side end portion and the outflow side end portion of each of the upper bodies 302b1 and 303b1.

[0327] In the contact areas between the protrusions 3105 of the lower bodies 301b1, 303b2 and the upper bodies 302b1, 303b1, protrusion seals 3107 are provided to suppress leakage of the cooling fluid.

[0328] A protrusion seal accommodating portion 3106 is provided in the contact area between each of the protrusions 3105 , and the protrusion seal accommodating portion 3106 is recessed to accommodate the protrusion seal 3107 .

[0329] With such a configuration, the heat sink 200 on the lower side of the first power semiconductor package 111 is inserted into and coupled to the through portion 3101 of the lower channel 301 b , and the upper body 302 b 1 of the first middle channel 3031 b is coupled to the heat sink 200 on the upper side of the first power semiconductor package 111 .

[0330] The lower body 301b1 of the first middle channel 3031b is coupled to the lower heat sink 200 of the second power semiconductor package 112. The upper heat sink 200 of the second power semiconductor package 112 is coupled to the upper body 302b1 of the second middle channel 3032b.

[0331] The lower body 301b1 of the second middle channel 3032b is coupled with the heat sink 200 on the lower side of the third power semiconductor package 113. The heat sink 200 on the upper side of the third power semiconductor package 113 is coupled to the upper channel 302b.

[0332] On the other hand, Fig. 22 As shown, the double-sided cooling type power semiconductor package 110 of this embodiment may be connected to a cooling fluid circulation loop 400 .

[0333] The cooling fluid circulation circuit 400 includes a pipe 403 for moving the cooling fluid.

[0334] The cooling fluid circulation circuit 400 includes a heat exchanger 401 for cooling the cooling fluid by exchanging heat, and a pump 402 for promoting movement of the cooling fluid.

[0335] When the operation starts, heat energy is generated by the heating of the plurality of circuit elements 1101 of each of the power semiconductor packages 110 .

[0336] The heat energy generated in the circuit elements 1101 of each of the power semiconductor packages 110 is transferred to the heat sinks 200 disposed on both sides.

[0337] If the operation starts, the pump 402 operates, and the cooling fluid of the cooling fluid circulation loop 400 passes through the heat exchanger 401 and is cooled by heat dissipation. The cooling fluid passing through the heat exchanger 401 flows into the inlet port 3203, and a part of the cooling fluid flowing into the lower channel 301b moves along the flow path of the lower channel 301b and absorbs heat energy.

[0338] Another portion of the cooling fluid flowing in through the inlet port 3203 moves along the inlet flow path 3108 and moves toward the branched first intermediate channel 3031 b , the second intermediate channel 3032 b , and the upper channel 302 b , respectively.

[0339] The cooling fluid flowing into the first middle channel 3031 b , the second middle channel 3032 b and the upper channel 302 b moves along the corresponding flow paths and absorbs heat energy, thereby cooling the corresponding heat sinks 200 , respectively.

[0340] Thus, it is possible to suppress temperature deviations on the bottom surfaces and top surfaces of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 .

[0341] The cooling fluid that moves along the respective flow paths of the lower channel 301b, the first intermediate channel 3031b, the second intermediate channel 3032b and the upper channel 302b and absorbs heat energy and whose temperature rises moves along the outflow path 3109 and moves to the cooling fluid circulation loop 400 through the outflow port 3204.

[0342] After being cooled in the heat exchanger 401, the cooling fluid moving to the cooling fluid circulation loop 400 flows into the inlet port 3203 and moves toward the lower channel 301b, the first middle channel 3031b, the second middle channel 3032b and the upper channel 302b to absorb heat energy. By repeating this process, each of the power semiconductor packages 110 is continuously cooled.

[0343] Fig.23 is a cross-sectional view of a double-sided cooling power semiconductor package according to another embodiment of the present invention, Fig.24 yes Fig.23 Magnified view of the lower and upper channels in Fig.25 yes Fig.23 A magnified view of the power semiconductor package and heat sink in Fig.26 yes Fig.24 A three-dimensional diagram of the combined state of the power semiconductor package and the heat sink, Fig. 27 yes Fig.24 Separated perspective view of the power semiconductor package and heat sink in the Fig.28 It is used to illustrate Fig.23 Figure 2 shows the effect of a double-sided cooling type power semiconductor package.

[0344] like Figure 23 to Figure 25 As shown, the double-sided cooling type power semiconductor package 100 c of this embodiment comprises a power semiconductor package 110 , a heat sink 200 d and a plurality of cooling channels 300 a .

[0345] For example, the power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0346] The power semiconductor package 110 has a packaging portion 1104 that integrally surrounds (packages) the plurality of circuit elements 1101, the upper substrate 1102, and the lower substrate 1103. For example, the packaging portion 1104 is implemented in a substantially thin rectangular parallelepiped shape.

[0347] Heat sinks 200 d are respectively disposed on both sides of the power semiconductor package 110 .

[0348] For example, the plurality of cooling channels 300 a include lower channels 301 and upper channels 302 . The lower channels 301 are disposed on the lower side of the power semiconductor package 110 , and the upper channels 302 are disposed on the upper side of the power semiconductor package 110 .

[0349] For example, each of the plurality of cooling channels 300a has a main body 310 and a cover 320, one side of the main body 310 contacts the power semiconductor package 110 along the thickness direction, the cover 320 is combined with the other side of the main body 310, and the cover 320 and the main body 310 form a flow path 3201 for the cooling fluid.

[0350] A body sealer 330 is disposed at a contact area between the body 310 and the cover 320 , and the body sealer 330 has a shape corresponding to that of the body 310 .

[0351] Thus, it is possible to suppress leakage of the cooling fluid from the gap between the body 310 and the cover 320 .

[0352] A through portion 3101 penetrating along a thickness direction is respectively provided on the main body 310 of the lower channel 301 and the main body 310 of the upper channel 302 , and each of the heat dissipating members 200 d can be inserted into the through portion 3101 .

[0353] An expansion portion 3102 is provided at the periphery of each of the penetration portions 3101 , and the expansion portion 3102 is recessed to have a size that is larger than that of the penetration portion 3101 .

[0354] An expansion portion seal 3103 is disposed inside each of the expansion portions 3102 , and the expansion portion seal 3103 is in contact with the power semiconductor package 110 to suppress leakage of the cooling fluid.

[0355] The upper channel 302 and the lower channel 301 are respectively provided with protrusions 3105 , and the protrusions 3105 protrude along the thickness direction and contact each other.

[0356] The protrusions 3105 are respectively disposed at the inflow side end portion and the outflow side end portion of the upper channel 302 and the inflow side end portion and the outflow side end portion of the lower channel 301 .

[0357] The lower channel 301 is provided with an inlet port 3203 for the cooling fluid to flow in and an outlet port 3204 for the cooling fluid to flow out.

[0358] The inflow port 3203 and the outflow port 3204 respectively penetrate the cover 320 formed on the lower channel 301 .

[0359] An inflow channel 3108 communicating with the inflow port 3203 is formed in the protruding portion 3105 provided at the inflow side end portion.

[0360] An outflow channel 3109 communicating with the outflow port 3204 is formed in the protruding portion 3105 provided at the outflow side end portion.

[0361] A protrusion seal 3107 is provided in the contact area between the protrusions 3105 .

[0362] Thus, it is possible to suppress leakage of the cooling fluid through the contact areas between the protrusions 3105 .

[0363] like Figure 25 to Figure 27 As shown, in the present embodiment, the power semiconductor package 110 may have a high temperature region 11041 at the center thereof where the temperature rises relatively high.

[0364] Here, the high temperature region 11041 is formed by a circuit element 1101 having a relatively large heat generation among the plurality of circuit elements 1101 of the power semiconductor package 110 .

[0365] In this embodiment, for the convenience of explaining the drawings, the high temperature region 11041 is shown as a rectangle having a size smaller than the edge of the packaging portion 1104 and is described as being arranged (formed) in the center of the power semiconductor package 110 .

[0366] In this embodiment, the heat sink 200 d may be configured to be disposed in the high temperature region 11041 of the power semiconductor package 110 .

[0367] In this way, heat dissipation in the high temperature area 11041 can be promoted.

[0368] In this embodiment, the heat sink 200d is configured to include corrugated heat sink fins 220a having a corrugated cross section.

[0369] The corrugated heat sink 220 a is directly in contact with and bonded to the bottom surface and the top surface of the power semiconductor package 110 .

[0370] The corrugated heat sink 220 a is in contact with and bonded to the high temperature regions 11041 on the bottom surface and the top surface of the power semiconductor package 110 , respectively.

[0371] For example, the corrugated fins 220a are formed of a metal member.

[0372] The corrugated heat sink 220 a includes a protruding portion 222 protruding from the surface (bottom surface, top surface) of the power semiconductor package 110 and a bonding portion 223 bonded to the surface of the power semiconductor package 110 in surface contact.

[0373] For example, a joint portion 206 (see FIG. 1 ) bonded by metal may be formed between the corrugated heat sink 220a and the upper substrate 1102. Fig.25 ).

[0374] The protruding portions 222 and the coupling portions 223 are alternately arranged along a surface direction of the power semiconductor package 110 .

[0375] The corrugated heat sink 220 a of the present embodiment can suppress an increase in thermal resistance caused by the use of the plate 210 by excluding the use of the rectangular plate 210 that is in surface contact with the surface of the power semiconductor package 110 .

[0376] Thus, the high temperature region 11041 of the power semiconductor package 110 can be cooled more quickly.

[0377] The protrusion 222 is formed to have a longer length along a surface direction of the power semiconductor package 110 .

[0378] For example, the protrusion 222 is configured to include two side walls 2221 and a connection portion 2222 . The two side walls 2221 are separated from each other to allow the cooling fluid to flow into the inside. The connection portion 2222 connects the ends of the two side walls 2221 .

[0379] In this embodiment, the protrusion 222 may be disposed along the moving direction of the cooling fluid.

[0380] The protrusion 222 is configured to have a corrugated cross section along the moving direction of the cooling fluid.

[0381] Thus, the contact area between the protrusion 222 and the cooling fluid can be increased.

[0382] In this embodiment, although the heat sink 200d is illustrated as having a single corrugated heat sink 220a having a size corresponding to the high temperature region 11041, this is merely an example, and the heat sink 200d may also be constructed to have a plurality of corrugated heat sinks 220a.

[0383] like Fig.28 As shown, the inflow port 3203 and the outflow port 3204 may be connected to a cooling fluid circulation loop 400 .

[0384] The cooling fluid circulation circuit 400 includes a pipe 403 for moving the cooling fluid.

[0385] The cooling fluid circulation circuit 400 includes a heat exchanger 401 for cooling the cooling fluid by exchanging heat, and a pump 402 for promoting movement of the cooling fluid.

[0386] When the operation starts, heat energy is generated by the heat generation of the power semiconductor package 110 , and the generated heat energy is transferred to the upper substrate 1102 and the lower substrate 1103 , respectively.

[0387] If the operation starts, the pump 402 operates, and the cooling fluid passes through the heat exchanger 401 and is cooled. The cooled cooling fluid flows into the inlet port 3203 and moves along the lower channel 301 and the upper channel 302, respectively.

[0388] The cooling fluid in the lower channel 301 absorbs the thermal energy of the lower substrate 1103 by directly contacting the lower substrate 1103 and the corrugated fins 220 a , thereby cooling the lower substrate 1103 .

[0389] The cooling fluid in the upper channel 302 absorbs heat energy from the upper substrate 1102 by directly contacting the upper substrate 1102 and the corrugated fins 220a, thereby cooling the upper substrate 1102.

[0390] The cooling fluid that absorbs the heat energy and increases in temperature passes through the cooling fluid circulation loop 400 and is cooled, and then passes through the lower channel 301 and the upper channel 302 and absorbs heat energy. By repeating this process, the power semiconductor package 110 is continuously cooled.

[0391] Fig.29 is a cross-sectional view of a double-sided cooling power semiconductor package according to another embodiment of the present invention, Fig.30 yes Fig.29 A magnified view of the connector and connector mating area in FIG. Fig.31 It is used to illustrate Fig.28 Figure 1 shows the effect of double-sided cooling on power semiconductor packages. Fig.29 and Fig.30 As shown, the double-sided cooling type power semiconductor package 100d of the present embodiment comprises a power semiconductor package 110, a heat sink 200 and a plurality of cooling channels 300d.

[0392] For example, the power semiconductor package 110 includes a plurality of circuit elements 1101 , an upper substrate 1102 , and a lower substrate 1103 . The upper substrate 1102 is disposed on the upper side of the plurality of circuit elements 1101 , and the lower substrate 1103 is disposed on the lower side of the plurality of circuit elements 1101 .

[0393] The power semiconductor package 110 has a packaging portion 1104 that integrally surrounds (packages) the plurality of circuit elements 1101, the upper substrate 1102, and the lower substrate 1103. For example, the packaging portion 1104 is implemented in a substantially thin rectangular parallelepiped shape.

[0394] For example, the power semiconductor package 110 is composed of a plurality of semiconductor packages 110 spaced apart along a board surface direction.

[0395] In this embodiment, for example, the power semiconductor package 110 is configured to include a first power semiconductor package 111 , a second power semiconductor package 112 , and a third power semiconductor package 113 that are spaced apart from each other along a board surface direction.

[0396] The heat sink 200 is disposed on the bottom surface and the top surface of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 , respectively.

[0397] For example, the heat sink 200 includes a rectangular plate-shaped plate 210 and a plurality of heat sinks 220 protruding from the plate 210 in a thickness direction.

[0398] The plate 210 of the heat sink 200 may be bonded to the surface of the power semiconductor package 110. The heat sink 200 may be combined with the surface of the power semiconductor package 110 using metal bonding (eg, sintering, soldering, or ultrasonic welding).

[0399] On the other hand, in the present embodiment, for example, the plurality of cooling channels 300 d include lower channels 301 d provided at the lower side of the power semiconductor package 110 and upper channels 302 d provided at the upper side of the power semiconductor package 110 .

[0400] For example, the lower channel 301d includes a body 310d and a cover 320d. The body 310d contacts the lower side of the power semiconductor package 110, and the cover 320d is combined with the body 310d to form a flow path 3201 of the cooling fluid inside.

[0401] For example, the upper channel 302d includes a body 310d and a cover 320d. The body 310d contacts the upper side of the power semiconductor package 110, and the cover 320d is combined with the body 310d to form a flow path 3201 of the cooling fluid inside.

[0402] Specifically, for example, the lower channel 301d has a first lower channel 301d1 disposed at the lower side of the first power semiconductor package 111 , a second lower channel 301d2 disposed at the lower side of the second power semiconductor package 112 , and a third lower channel 301d3 disposed at the lower side of the third power semiconductor package 113 .

[0403] For example, the upper channel 302d is configured to include a first upper channel 302d1 disposed on the upper side of the first power semiconductor package 111 , a second upper channel 302d2 disposed on the upper side of the second power semiconductor package 112 , and a third upper channel 302d3 disposed on the upper side of the third power semiconductor package 113 .

[0404] Here, each main body 310d of the lower channel 301d and each main body 310d of the upper channel 302d are respectively provided with a penetration portion 3101 penetrating along the thickness direction so that each heat sink 200 can be inserted.

[0405] An expansion portion 3102 that is recessed along the thickness direction is disposed at the periphery of each of the penetration portions 3101 , and the expansion portion 3102 has a size that is larger than that of each of the penetration portions 3101 .

[0406] An expansion portion seal 3103 is disposed inside each of the expansion portions 3102 and contacts each of the heat sinks 200 to suppress leakage of the cooling fluid.

[0407] An inflow port 3203 for cooling fluid to flow into is provided at one side of the lower channel 301d.

[0408] The inflow port 3203 is formed in the first lower channel 301d1.

[0409] The inflow port 3203 is formed through the cover 320d of the first lower channel 301d1 in the thickness direction.

[0410] The first lower channel 301d1 and the first upper channel 302d1 are respectively provided with protrusions 3105, and the protrusions 3105 protrude in the thickness direction and contact each other.

[0411] An inflow channel 3108 communicating with the inflow port 3203 is provided inside the protruding portion 3105 of the first lower channel 301 d 1 and inside the protruding portion 3105 of the first upper channel 302 d 1 .

[0412] A protrusion seal 3107 is provided in a contact area between the protrusion 3105 of the first lower channel 301d1 and the protrusion 3105 of the first upper channel 302d1.

[0413] An outflow port 3204 for the cooling fluid to flow out is provided on the other side of the lower channel 301d.

[0414] The outflow port 3204 is disposed in the third lower channel 301d3.

[0415] The outflow port 3204 is formed through the cover 320d of the third lower channel 301d3 in the thickness direction.

[0416] The third lower channel 301d3 and the third upper channel 302d3 are respectively provided with protrusions 3105, which protrude in the thickness direction and contact each other.

[0417] An outflow channel 3109 communicating with the outflow port 3204 is provided inside the protrusion 3105 of the third lower channel 301d3 and inside the protrusion 3105 of the third upper channel 302d3.

[0418] A protrusion seal 3107 is provided in a contact area between the protrusion 3105 of the third lower channel 301d3 and the protrusion 3105 of the third upper channel 302d3.

[0419] On the other hand, the lower channel 301d and the upper channel 302d which are separated from each other in the board surface direction are connected to each other by the connector 340 arranged in the board surface direction.

[0420] The connector 340 includes a lower connector 341 connected to the plurality of lower channels 301 d and an upper connector 342 connected to the plurality of upper channels 302 d .

[0421] Specifically, the lower connector 341 includes a first lower connector 3411 connecting the first lower channel 301d1 and the second lower channel 301d2 and a second lower connector 3412 connecting the second lower channel 301d2 and the third lower channel 301d3.

[0422] The upper connector 342 includes a first upper connector 3421 connecting the first upper channel 302d1 and the second upper channel 302d2 and a second upper connector 3422 connecting the second upper channel 302d2 and the third upper channel 302d3.

[0423] Since the structures of the connectors 340 are the same, the first upper connector 3421 is taken as an example for description below.

[0424] Connector coupling parts 345 are respectively formed on the first upper channel 302d1 and the second upper channel 302d2 adjacent to each other, so that each end of the first upper connector 3421 can be coupled to the first upper channel 302d1 and the second upper channel 302d2 respectively.

[0425] Each of the connector coupling parts 345 is recessed inwards so that the end of the first upper connector 3421 can be inserted and coupled to the connector at a preset depth.

[0426] Here, the connector 340 may be implemented in a tube shape.

[0427] The connector coupling portion 345 of the first upper passage 302 d 1 and the connector coupling portion 345 of the second upper passage 302 d 2 are configured to have an inner width (inner diameter) expanded from an outer width (outer diameter) of the connector 340 .

[0428] A communication portion 343 communicating with the flow path 3201 inside each of the upper channels 302 d is formed on one side inside the connector coupling portion 345 .

[0429] The first upper connector 3421 (connector 340 ) is communicated with the internal flow path 3201 of the first upper channel 302 d 1 and the internal flow path 3201 of the second upper channel 302 d 2 through the communication portion 343 .

[0430] A connector seal 350 is disposed between the connector 340 and the connector coupling portion 345 .

[0431] For example, the connector seal 350 may be formed of an airtight member having elasticity (eg, a rubber member, a silicone member).

[0432] Therefore, when each of the power semiconductor packages 110 is thermally deformed along the board surface direction, the deformation can be absorbed by the sliding of the connector 340 , the connector coupling portion 345 , and the connector seal 350 .

[0433] like Fig.31As shown, the double-sided cooling type power semiconductor package 110 d of the present embodiment may be connected to a cooling fluid circulation loop 400 .

[0434] The cooling fluid circulation circuit 400 includes a pipe 403 for moving the cooling fluid.

[0435] The cooling fluid circulation circuit 400 includes a heat exchanger 401 for cooling the cooling fluid by exchanging heat, and a pump 402 for promoting movement of the cooling fluid.

[0436] When the operation starts, heat energy is generated by the heat generated by the circuit elements 1101 of the first power semiconductor package 111 , the second power semiconductor package 112 , and the third power semiconductor package 113 .

[0437] The heat energy generated from each of the circuit elements 1101 is transferred to the heat sinks 200 on both sides along the thickness direction.

[0438] If the operation starts, the pump 402 operates, and the cooling fluid passes through the heat exchanger 401 and is cooled. The cooled cooling fluid flows into the inlet port 3203, and a portion of the inflowing cooling fluid passes through the first lower channel 301d1 and absorbs heat energy. The cooling fluid passing through the first lower channel 301d1 passes through the first lower connector 3411, the second lower channel 301d2, the second lower connector 3412, and the third lower channel 301d3 and absorbs heat energy respectively, and the temperature rises.

[0439] In addition, another part of the cooling fluid flowing in from the inlet port 3203 passes through the inlet flow path 3108, the first upper channel 302d1, the first upper connector 3421, the second upper channel 302d2, the second upper connector 3422 and the third upper channel 302d3 and absorbs heat energy and its temperature rises.

[0440] The cooling fluid passing through the third upper channel 302 d 3 moves along the outflow path 3109 , merges with the cooling fluid passing through the third lower channel 301 d 3 , and then flows out through the outflow port 3204 .

[0441] The cooling fluid flowing out from the outflow port 3204 circulates along the cooling fluid circulation loop 400 and after being cooled in the heat exchanger 401, flows into the inlet port 3203 and passes through the lower channel 301d and the upper channel 302d and absorbs heat energy. By repeating this process, each of the power semiconductor packages 110 is cooled separately.

[0442] The above diagrams and descriptions illustrate specific embodiments of the present invention. However, the present invention can be implemented in various forms without departing from the concept or essential features thereof, and therefore, the embodiments described above should not be limited to the specific contents used to implement the invention.

[0443] In addition, even embodiments not listed in the above detailed description should be interpreted broadly within the scope of the technical concept defined in the appended claims. In addition, all changes and modifications included in the technical scope of the claims and their equivalents should be included in the appended claims.

Claims

1. A double-sided cooling type power semiconductor package, wherein: include: Plate-shaped power semiconductor packages; heat sinks, respectively disposed on both sides of the power semiconductor package along the thickness direction of the power semiconductor package; as well as A plurality of cooling channels, each having a flow path for a cooling fluid disposed therein, and each of the cooling channels is disposed on both sides of the power semiconductor package along a thickness direction of the power semiconductor package; A through portion is respectively provided in the plurality of cooling channels, and the through portion is penetrated so that a region of the heat sink can be inserted.

2. The double-sided cooling type power semiconductor package according to claim 1, wherein: Each of the plurality of cooling channels is provided with: a main body, one side of which is in contact with the power semiconductor package along a thickness direction; and a cover, combined with the other side of the main body, and forming a flow path of the cooling fluid with the main body; The penetration portion is formed to penetrate the body along the thickness direction.

3. The double-sided cooling type power semiconductor package according to claim 2, wherein: A body sealer corresponding to the edge shape of the body is provided in a contact area between the body and the cover.

4. The double-sided cooling type power semiconductor package according to claim 3, wherein: A main body seal accommodating portion is formed in the main body to accommodate the main body seal.

5. The double-sided cooling type power semiconductor package according to claim 2, wherein: The cooling channel has: a lower channel disposed on a lower side of the power semiconductor package; and An upper channel is arranged on the upper side of the power semiconductor package.

6. The double-sided cooling type power semiconductor package according to claim 5, wherein: The lower channel and the upper channel are connected in parallel to a cooling fluid circulation loop in which the cooling fluid circulates.

7. The double-sided cooling type power semiconductor package according to claim 6, wherein: The lower channel is provided with: an inflow port, extending therethrough for allowing the cooling fluid to flow in; and an outflow port, extending therethrough for allowing the cooling fluid to flow out; The inflow port and the outflow port are respectively connected to the cooling fluid circulation circuit.

8. The double-sided cooling type power semiconductor package according to claim 5, wherein: The main body is provided with an expansion portion, which is recessed along the thickness direction at the periphery of the penetration portion to have a size larger than that of the penetration portion. An expansion portion seal is provided inside the expansion portion, and the expansion portion seal contacts the heat sink to suppress leakage of the cooling fluid.

9. The double-sided cooling type power semiconductor package according to claim 8, wherein: The heat sink has: a plate having a size expanded than the expansion portion and in contact with the power semiconductor package; and A plurality of heat sinks protrude from the plate in a thickness direction.

10. The double-sided cooling type power semiconductor package according to claim 7, wherein: The heat sink is provided with a corrugated heat sink with a corrugated cross section, The corrugated heat sink is combined with the surface of the power semiconductor package.

11. The double-sided cooling type power semiconductor package according to claim 7, wherein: The inflow port and the outflow port are each formed in the cover, An inflow passage communicating with the inflow port and an outflow passage communicating with the outflow port are provided in the main body of the lower channel and the main body of the upper channel.

12. The double-sided cooling type power semiconductor package according to claim 11, wherein: The inflow side end portion and the outflow side end portion of the lower channel and the inflow side end portion and the outflow side end portion of the upper channel are respectively provided with protrusions, and the protrusions protrude in the thickness direction and contact each other. A power semiconductor package insertion space for inserting the power semiconductor package is formed between the protruding portions. The inflow channel and the outflow channel are respectively formed inside the protruding portion.

13. The double-sided cooling type power semiconductor package according to claim 12, wherein: A projection seal for suppressing leakage of the cooling fluid is provided at a contact area between the projections.

14. The double-sided cooling type power semiconductor package according to claim 5, wherein: The power semiconductor package is composed of a plurality of semiconductor packages separated along the board surface direction. The main body is provided with a plurality of through portions spaced apart along the plate surface direction, so that the heat sinks of the plurality of power semiconductor packages can be inserted respectively.

15. The double-sided cooling type power semiconductor package according to claim 2, wherein: The power semiconductor package is composed of a plurality of semiconductor components separated along the thickness direction. The cooling channel has: A lower channel, arranged at the lowermost side of the power semiconductor package composed of the plurality of said semiconductor packages; an upper channel arranged on the uppermost side of the power semiconductor package composed of the plurality of said semiconductor packages; as well as An intermediate channel is arranged between the plurality of power semiconductor packages; The lower channel, the upper channel, and the middle channel are formed so that the inflow sides of the cooling fluid of the lower channel, the upper channel, and the middle channel are communicated with each other, and the outflow sides of the cooling fluid of the lower channel, the upper channel, and the middle channel are communicated with each other.

16. The double-sided cooling type power semiconductor package according to claim 15, wherein The lower channel has a lower body and a lower cover, wherein the lower body is arranged at the lowermost side of the power semiconductor package composed of the plurality of components and has the through portion formed therein, and the lower cover is combined with the bottom of the lower body to form a flow path of the cooling fluid inside. The upper channel has an upper body and an upper cover, wherein the upper body is arranged on the uppermost side of the power semiconductor package composed of the plurality of packages and is provided with the penetration portion, and the upper cover is combined with the top surface of the upper body to form a flow path of the cooling fluid inside. The intermediate channel is provided with an upper body, a lower body and an intermediate cover. The upper body is arranged on the upper side of the power semiconductor package composed of the plurality of components and is provided with the through portion. The lower body is arranged separately on the upper side of the upper body. The lower body is combined with the bottom surface of the power semiconductor package composed of the plurality of components and is provided with the through portion. The intermediate cover is formed between the upper body and the lower body to divide the interior of the upper body and the interior of the lower body.

17. The double-sided cooling type power semiconductor package according to claim 16, wherein: The lower cover is provided with an inlet port for the cooling fluid to flow in and an outlet port for the cooling fluid to flow out. The lower body and the upper body are provided with an inflow passage communicating with the inflow port and an outflow passage communicating with the outflow port.

18. The double-sided cooling type power semiconductor package according to claim 5, wherein: The power semiconductor package is composed of a plurality of semiconductor packages separated along the board surface direction. The power semiconductor packages composed of the plurality of packages respectively have the lower channel and the upper channel. The lower channel and the upper channel separated in the board surface direction are respectively connected in a communicative manner by a connector arranged in the board surface direction.

19. The double-sided cooling type power semiconductor package according to claim 18, wherein: The upper channel and the lower channel of the power semiconductor package composed of the plurality of semiconductor packages are both provided with a connector coupling portion coupled with the connector. A connector seal is provided in a contact area between each of the connector coupling parts and each of the connectors.

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