Method for welding quartz glass and sapphire

Abstract

The embodiment of the invention discloses a quartz glass and sapphire welding method, a quartz glass and sapphire welding system comprises laser welding equipment, the laser welding equipment is provided with a welding area, and the quartz glass and sapphire welding method comprises the steps that the surface of quartz glass and the surface of sapphire are cleaned; the quartz glass and the sapphire are stacked in a welding area of laser welding equipment so that the to-be-welded face of the quartz glass can be attached to the to-be-welded face of the sapphire; laser generated by the laser welding equipment is controlled to penetrate through the quartz glass, and the to-be-welded face of the sapphire is subjected to surface activating treatment; and laser welding equipment is controlled to weld the to-be-welded surface of the quartz glass and the to-be-welded surface of the sapphire subjected to surface activation treatment. Surface activation and welding can be carried out after the quartz glass and the sapphire are stacked in the welding area of the laser welding equipment, welding can be directly carried out after surface activation is completed, additional procedures or materials do not need to be added, and the welding technological process is simplified.

Description

Technical Field

[0001] The present application relates to the field of welding technology, and in particular to a welding method for quartz glass and sapphire. Background Art

[0002] Sapphire has excellent mechanical and optical properties and has important application value in cutting-edge fields such as microelectronics and optical communications. Due to the high production cost of sapphire, low-cost quartz glass is often used as the substrate of sapphire and as a structural support material in non-critical positions of sapphire devices. In related technologies, quartz glass and sapphire are connected by welding, which has the problem of complex process flow. Summary of the invention

[0003] In view of this, an embodiment of the present application hopes to provide a method for welding quartz glass and sapphire, so as to simplify the process flow of welding quartz glass and sapphire.

[0004] To achieve the above-mentioned purpose, an embodiment of the present application provides a method for welding quartz glass and sapphire, wherein the welding system of quartz glass and sapphire includes a laser welding device, wherein the laser welding device is provided with a welding area, and the welding method of quartz glass and sapphire includes:

[0005] Cleaning the surface of the quartz glass and the surface of the sapphire;

[0006] The quartz glass and the sapphire are stacked in the welding area of ​​the laser welding equipment so that the surface to be welded of the quartz glass and the surface to be welded of the sapphire are in contact with each other;

[0007] Controlling the laser generated by the laser welding equipment to pass through the quartz glass to perform surface activation treatment on the surface to be welded of the sapphire;

[0008] The laser welding equipment is controlled to weld the surface to be welded of the quartz glass and the surface to be welded of the sapphire after the surface activation treatment.

[0009] In one embodiment, the cleaning of the surface of the quartz glass and the surface of the sapphire comprises:

[0010] Immersing the quartz glass and the sapphire in an organic solvent for ultrasonic cleaning;

[0011] The quartz glass and the sapphire were taken out and wiped with a dust-free cloth.

[0012] In one embodiment, the laser welding equipment includes an ultrafast laser generator, the wavelength of the laser generated by the ultrafast laser generator is greater than or equal to 1000nm and less than or equal to 1100nm; and / or,

[0013] The pulse width of the laser generated by the ultrafast laser generator is greater than or equal to 0.3 ps and less than or equal to 1 ps.

[0014] In one embodiment, controlling the laser of the laser welding device to pass through the quartz glass to perform surface activation treatment on the surface to be welded of the sapphire comprises:

[0015] Controlling the focal plane of the laser generated by the ultrafast laser generator to be the surface of the sapphire close to the quartz glass;

[0016] The power of the laser generated by the ultrafast laser generator is controlled to be a first power, the scanning speed is a first speed, the pulse frequency is a first frequency, and the defocus amount is a first defocus amount.

[0017] In one embodiment, the first power is greater than or equal to 0.2 W and less than or equal to 1 W; and / or,

[0018] The first speed is greater than or equal to 1 mm / s and less than or equal to 10 mm / s; and / or,

[0019] The first frequency is greater than or equal to 10 MHz and less than or equal to 20 MHz; and / or,

[0020] The first defocus amount is greater than or equal to -5 μm and less than or equal to -1 μm.

[0021] In one embodiment, controlling the laser welding device to weld the surface to be welded of the quartz glass and the surface to be welded of the sapphire after surface activation treatment comprises:

[0022] Controlling the focal plane of the laser generated by the ultrafast laser generator to be at the bonding interface between the quartz glass and the surface to be welded of the sapphire;

[0023] The power of the laser generated by the ultrafast laser generator is controlled to be a second power, the scanning speed is a second speed, the pulse frequency is a second frequency, and the defocus amount is a second defocus amount; wherein the second power is greater than the first power, and / or the second speed is greater than the first speed, and / or the second frequency is less than the first frequency, and / or the second defocus amount is greater than the first defocus amount.

[0024] In one embodiment, the second power is greater than or equal to 1 W and less than or equal to 10 W; and / or,

[0025] The second speed is greater than or equal to 20 mm / s and less than or equal to 100 mm / s; and / or,

[0026] The second frequency is greater than or equal to 0.5 MHz and less than or equal to 1 MHz; and / or,

[0027] The second defocus amount is 0 μm.

[0028] In one embodiment, the laser welding equipment includes an optical path system and a galvanometer; the laser generated by the ultrafast laser generator is transmitted to the galvanometer through the optical path system, and the galvanometer controls the direction and position of the laser generated by the ultrafast laser generator.

[0029] In one embodiment, the laser welding equipment includes a fixture and a multi-axis guide rail, wherein the fixture is arranged on the multi-axis guide rail, and the fixture clamps the quartz glass and the sapphire; the multi-axis guide rail can at least drive the fixture to move in a first direction, a second direction and a third direction; wherein the first direction intersects with the second direction, and the first direction intersects with the third direction.

[0030] In one embodiment, the clamp includes a first clamping portion and a second clamping portion that are arranged opposite to each other, and a distance adjusting member is provided between the first clamping portion and the second clamping portion, and the distance adjusting member adjusts the distance between the first clamping portion and the second clamping portion; one of the first clamping portion and the second clamping portion is provided with an opening, and the opening exposes the surfaces to be welded of the quartz glass and the sapphire.

[0031] The welding method of quartz glass and sapphire provided in the embodiment of the present application can be surface activated and welded after the quartz glass and sapphire are stacked in the welding area of ​​the laser welding equipment. The laser can penetrate the quartz glass and directly activate the surface of the sapphire. In this way, the quartz glass and sapphire can be surface activated after being stacked and bonded after cleaning. There is no need to directly expose the surface to be welded for surface activation, which reduces the possibility of impurities in the air entering the surface to be welded. The surface activation treatment improves the welding quality of dissimilar materials. After the surface activation is completed, welding can be carried out directly without adding additional processes or materials. While ensuring the welding quality, it simplifies the welding process and reduces production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 Schematic diagram of a process for welding quartz glass and sapphire in one embodiment of the present application;

[0033] Figure 2 This is a schematic diagram of the structure of a laser welding device in one embodiment of the present application;

[0034] Figure 3 Schematic diagram of the structure of a clamp in one embodiment of the present application.

[0035] Description of Reference Numerals

[0036] 10. Laser welding equipment; 1. Ultrafast laser generator; 2. Optical path system; 3. Galvanometer; 4. Clamp; 41. First clamping part; 42. Second clamping part; 43. Distance adjustment part; 44. Opening; 5. Multi-axis guide rail. DETAILED DESCRIPTION

[0037] It should be noted that, in the absence of conflict, the embodiments and technical features in the embodiments of the present application can be combined with each other, and the detailed description in the specific implementation method should be understood as an explanation of the purpose of the present application and should not be regarded as an improper limitation on the present application.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in this application are intended to cover non-exclusive inclusions.

[0039] In the description of the embodiments of the present application, the technical terms "first", "second", "third", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0042] In the description of the embodiments of the present application, technical terms such as "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "circumferential", "height direction", "first direction", and "second direction" indicate orientation or positional relationships, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed, operated or used in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0043] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0044] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, the technical term "contact" should be understood in a broad sense, and may be direct contact or contact through an intermediate medium layer. It may be contact with essentially no interaction force between the two contacting parties, or it may be contact with interaction force between the two contacting parties.

[0045] This application provides a method for welding quartz glass and sapphire, which is applied to a welding system for quartz glass and sapphire. Figure 1 The quartz glass and sapphire welding system includes a laser welding device 10, and the laser welding device 10 is provided with a welding area.

[0046] Sapphire is a single crystal of aluminum oxide with excellent mechanical properties, light transmittance and corrosion resistance, and has important application value in cutting-edge fields such as microelectronics and optical communications. The production process of sapphire is relatively complex, resulting in high processing costs for its related products.

[0047] As a common transparent material, quartz glass has slightly inferior optical and mechanical properties to sapphire. However, due to its mature production process, it can be used as a structural support material in non-critical positions of sapphire devices. Therefore, quartz glass is often used as a substrate in the production process of sapphire-related products.

[0048] The laser welding device 10 is a device that uses a laser beam as a heat source for welding. Laser has the advantages of high energy density, good directivity, and a small heat-affected zone, and can achieve high-precision and high-quality welding.

[0049] The welding area is a specific area in the laser welding equipment 10 specifically used for placing the workpieces to be welded and performing welding operations. The specific position and shape are not limited here and are determined according to actual usage requirements.

[0050] See also Figure 1 The method for welding quartz glass and sapphire includes the following steps S101 to S104:

[0051] Step S101, cleaning the surface of the quartz glass and the surface of the sapphire.

[0052] The purpose of cleaning the surface of quartz glass and sapphire is to remove impurities, oil stains, oxides and other pollutants on the surface to ensure that the two can fit well during welding and avoid the influence of impurities on welding quality, such as forming pores and reducing welding strength.

[0053] The specific cleaning method is not limited here, for example, it can be to use clean water to rinse the surface dirt, or to use high-pressure gas to blow away the surface dust, etc.

[0054] Here, it should be noted that the main purpose here is to clean the surfaces of the quartz glass and sapphire to be welded in preparation for subsequent steps.

[0055] Step S102, stacking the quartz glass and the sapphire in the welding area of ​​the laser welding equipment so that the surface to be welded of the quartz glass and the surface to be welded of the sapphire are in contact with each other.

[0056] The surface to be welded refers to the surface where two materials (such as quartz glass and sapphire) are connected to each other by heating, pressurizing or adding filler materials during the welding process. It is the key area of ​​the welding operation, and the welding quality depends largely on the treatment of the surface to be welded and the physical and chemical changes that occur on this surface during the welding process.

[0057] The surfaces of the quartz glass and sapphire to be welded should be as flat as possible. A flat surface helps the two to fit tightly. If the surfaces to be welded are not flat, the laser energy distribution will be uneven during the welding process, which may cause local overheating or insufficient welding. For example, when there is a tiny protrusion on the surface of the quartz glass to be welded, and the surface of the sapphire to be welded is flat, after applying pressure to fit the two together, the protrusion will have poor contact with the sapphire, and this part may not form a good bond during welding.

[0058] The quartz glass and sapphire are stacked in the welding area of ​​the laser welding device 10, and the surfaces to be welded are aligned to prepare for the subsequent welding operation. The tightness of the alignment will affect the quality and strength of the welding. The tighter the alignment, the easier it is for atoms to diffuse and combine during welding.

[0059] Step S103, controlling the laser generated by the laser welding equipment to pass through the quartz glass to perform surface activation treatment on the surface of the sapphire to be welded.

[0060] Surface activation treatment is a material surface modification technology. It treats the material surface through physical, chemical or physical-chemical methods to change its surface microstructure, chemical composition and energy state, so as to make the material surface have better reactivity and processability.

[0061] Here, the surface of the sapphire to be welded is activated by the laser generated by the laser welding device 10, and the laser is made to act on the surface of the material by controlling the laser energy, wavelength, pulse frequency and other parameters. In this welding system, the laser passes through the quartz glass to process the surface of the sapphire to be welded. The energy of the laser causes the atoms on the surface of the sapphire to vibrate and migrate, and even break and reorganize chemical bonds. For example, the laser energy can cause the aluminum oxide lattice on the surface of the sapphire to distort and produce defects. These defect sites have high activity and can promote interaction with the atoms on the surface of the quartz glass. Moreover, laser processing has the characteristics of high precision and strong localization, and the activation area and depth can be accurately controlled.

[0062] The laser generated by the laser welding device 10 is controlled to pass through the quartz glass to perform surface activation treatment on the surface to be welded of the sapphire. The purpose of the surface activation treatment is to change the physical and chemical properties of the sapphire surface, increase its surface energy, and enhance the bonding force with the quartz glass. The laser passing through the quartz glass may utilize the quartz glass to have a certain degree of transmittance to the laser wavelength, thereby treating the sapphire surface without directly damaging the quartz glass surface.

[0063] Step S104, controlling the laser welding equipment to weld the surface to be welded of the quartz glass and the surface to be welded of the sapphire after the surface activation treatment.

[0064] Here, it should be noted that welding should be performed as quickly as possible after the surface treatment to ensure the effect of the surface activation treatment. After the surface activation treatment, the laser welding device 10 is controlled to weld the surface to be welded of the quartz glass and the surface to be welded of the treated sapphire to achieve a firm connection between the two. During the welding process, the energy of the laser partially melts the surface to be welded of the quartz glass and the sapphire, and then cools and solidifies to form a weld to achieve the connection between the two.

[0065] When welding two dissimilar materials, sapphire and quartz glass, the thermal expansion coefficient of quartz glass is low, while the thermal expansion coefficient of sapphire is relatively high. This difference can cause thermal stress during the heating and cooling stages of the welding process. For example, when the welded component is cooled from high temperature to room temperature, the two materials shrink to different degrees, just like two rods of different materials, which expand and contract to different degrees when the temperature changes, which will generate tensile stress or compressive stress at the weld joint. This thermal stress may cause cracks in the weld joint, seriously affecting the welding quality and the service life of the product. Therefore, when welding dissimilar materials, direct stacking is usually not used for welding.

[0066] In the related art, when dissimilar materials are stacked and welded, a transition layer is usually added in the middle. The thermal expansion coefficient of this transition layer is between the two welded materials. The two welded materials are respectively connected to the transition layer by methods such as adhesive bonding, sintering, and active brazing. Since the thermal expansion coefficients of the transition layer and the two welded materials are close, the welding of dissimilar materials can be achieved through the transition layer while ensuring a certain welding quality.

[0067] In some embodiments, a metal layer is plated on the surface of the quartz glass and sapphire through coating, metallization, annealing, etc. The metal layer is a material with a thermal expansion coefficient close to that of the quartz glass and sapphire, and the metal layer is a transition layer, through which the connection between the quartz glass and the sapphire is achieved.

[0068] It is understandable that the process of welding dissimilar materials by means of a transition layer is complicated, and the introduction of the transition layer increases the thickness of the workpiece after welding.

[0069] The present application treats the sapphire surface by surface activation to solve the welding quality problem existing in the stacking welding of two dissimilar materials, quartz glass and sapphire.

[0070] In the related technology, surface activation usually adopts plasma activation and vacuum ultraviolet light activation. Both activation processes require the activated surface to be exposed to the activation equipment, which is easily affected by the surrounding environment, such as impurities in the air, which reduces the welding quality. Therefore, the workpiece is usually placed in a vacuum environment for surface activation, and then manually stacked and bonded before welding after activation. The traditional activation process also has the problems of complex process and high cost.

[0071] The welding method of quartz glass and sapphire provided in the embodiment of the present application can perform surface activation and welding after the quartz glass and sapphire are stacked in the welding area of ​​the laser welding equipment 10. The laser can penetrate the quartz glass and directly activate the surface of the sapphire. In this way, the quartz glass and sapphire can be surface activated after being stacked and bonded after cleaning. There is no need to directly expose the surface to be welded for surface activation, which reduces the possibility of impurities in the air entering the surface to be welded. The surface activation treatment improves the welding quality of dissimilar materials. After the surface activation is completed, welding can be performed directly without adding additional processes or materials. While ensuring the welding quality, the welding process is simplified and the production cost is reduced.

[0072] In some embodiments, step S101 includes the following steps S1011 to S1012:

[0073] Step S1011, immersing the quartz glass and sapphire in an organic solvent for ultrasonic cleaning.

[0074] Organic solvents are liquid mixtures specifically used to remove impurities, oil stains, oxides and other contaminants from the surface of objects. Their composition may vary depending on the material to be cleaned and the nature of the contaminants. Common organic solvents may also contain surfactants, acids and alkalis to enhance their ability to dissolve and remove dirt. In addition, organic solvents cannot react with quartz glass and sapphire, which will affect the performance of quartz glass and sapphire.

[0075] The specific type of organic solvent is not limited here. Exemplarily, the organic solvent is an acetone solution. Acetone is an organic solvent that has a good solubility for many organic pollutants on the surface of quartz glass and sapphire, such as oil, grease, fingerprints, etc. Acetone solution generally does not chemically react with quartz glass and sapphire. Acetone has low toxicity and relatively low production cost. In large-scale quartz glass and sapphire cleaning operations, using acetone solution as an organic solvent can effectively control the cleaning cost while ensuring the cleaning effect.

[0076] Ultrasonic cleaning uses high-frequency vibration waves generated by ultrasound in liquids to continuously generate, expand, and burst tiny bubbles in the liquid. This phenomenon is called the cavitation effect. The powerful impact force generated by the cavitation effect can effectively remove dirt and impurities from the surface of objects. It is an efficient cleaning method, especially suitable for cleaning objects with complex shapes or tiny gaps.

[0077] Immerse quartz glass and sapphire in organic solvents for ultrasonic cleaning. Through the combination of the chemical action of organic solvents and the physical action of ultrasonic waves, various pollutants on the surface of quartz glass and sapphire are completely removed. Organic solvents can react chemically with oil, oxides, etc. to dissolve or decompose them, while the cavitation effect generated by ultrasonic waves can shake off stubborn impurities attached to the surface of the material, ensuring that the surface is deeply cleaned.

[0078] Step S1012, take out the quartz glass and sapphire and wipe them with a dust-free cloth.

[0079] Dust-free cloth is a kind of cloth with high cleaning performance, usually made of special fiber material, whose surface is not easy to produce fiber shedding, which can avoid secondary contamination of the surface of the cleaned object during wiping. It has good water absorption and adsorption, and can be used to remove residual liquid and minor stains on the surface of objects.

[0080] In some embodiments, after wiping with a dust-free cloth, a surface cleanliness detection step can also be set to detect the cleaned quartz glass and sapphire surfaces using an optical microscope, an electron microscope or a surface analysis instrument to analyze indicators such as surface impurity content and cleanliness level. If the detection result does not meet the requirements, the cleaning can be repeated or the cleaning process can be adjusted.

[0081] After ultrasonic cleaning, some organic solvents and a small amount of incompletely removed stains may remain on the surface of the material. Using a dust-free cloth to wipe can further remove these residual substances, making the surface cleaner and tidier. At the same time, due to the characteristics of the dust-free cloth, no new impurities will be introduced during the wiping process, ensuring the surface quality after cleaning.

[0082] In some embodiments, see Figure 2 The laser welding equipment 10 includes an ultrafast laser generator 1. The wavelength of the laser generated by the ultrafast laser generator 1 is greater than or equal to 1000nm and less than or equal to 1100nm.

[0083] The ultrafast laser generator 1 is a device capable of generating ultrafast laser pulses. Ultrafast lasers generally refer to lasers with pulse widths in the order of picoseconds (ps) or shorter, which have extremely high peak power and extremely short pulse duration, and can achieve fine processing and treatment of materials. Compared with ordinary lasers, the pulse width of ultrafast lasers is extremely short, which enables it to act on materials in an extremely short time. Ultrafast lasers release energy in a concentrated manner in a short time, and can generate extremely high peak power. The time for ultrafast lasers to interact with materials is extremely short, and the energy does not have time to diffuse in the material, and will not bring obvious thermal effects to the surrounding materials. In this way, the impact of lasers on non-welding areas of quartz glass and sapphire during welding can be reduced. In addition, ultrafast lasers have a wide range of material applicability. When cutting, punching, welding, and other processing of materials with high hardness and high melting points such as sapphire and ceramics, ultrafast lasers can overcome the difficulties of ordinary laser processing and achieve better processing effects.

[0084] The specific wavelength of the laser generated by the ultrafast laser generator 1 is not limited here, for example, it can be 1000nm, 1010nm, 1020nm, 1030nm, 1040nm, 1050nm, 1060nm, 1070nm, 1080nm, 1090nm, 1100nm, etc.

[0085] The wavelength of the laser generated by the ultrafast laser generator 1 is limited to be greater than or equal to 1000nm and less than or equal to 1100nm. The selection of this wavelength range is based on the optical absorption characteristics of quartz glass and sapphire and the requirements of the welding process. Within this wavelength range, the laser may have a certain penetration depth and appropriate absorption degree in quartz glass and sapphire, which can ensure that sufficient energy acts on the welding area when processing the material, without excessive penetration or unnecessary damage to the material. When the wavelength is appropriate, the laser energy can be better absorbed by sapphire, promoting the interaction of atoms in the surface activation process and the welding process, and at the same time, it can penetrate the quartz glass relatively well to process the sapphire without seriously affecting the performance of the quartz glass.

[0086] In some embodiments, the pulse width of the laser generated by the ultrafast laser generator 1 is greater than or equal to 0.3 ps and less than or equal to 1 ps.

[0087] The specific pulse width of the laser generated by the ultrafast laser generator 1 is not limited here, and can be, for example, 0.3 ps, 0.4 ps, 0.5 ps, 0.6 ps, 0.7 ps, 0.8 ps, 0.9 ps, 1 ps, etc.

[0088] The laser pulse width generated by the ultrafast laser generator 1 is limited to be greater than or equal to 0.3ps and less than or equal to 1ps. This short pulse width laser has a series of unique advantages. During the welding process, the short pulse laser can concentrate its energy on the surface of the material in a very short time, generating instantaneous high temperature and high pressure, so that the atoms on the surface of the material can quickly obtain enough energy to undergo physical and chemical changes such as migration and diffusion, which is conducive to achieving high-quality surface activation and welding. At the same time, the short pulse laser can reduce the impact of heat diffusion on the surrounding materials and reduce the generation of thermal stress, thereby improving the quality and stability of the welded joint.

[0089] In some embodiments, see Figure 2 , step S103 includes the following steps S1031 to S1032:

[0090] Step S1031, controlling the focal plane of the laser generated by the ultrafast laser generator to be the surface of the sapphire close to the quartz glass.

[0091] The focal plane refers to the plane where the light converges after passing through the lens. In laser processing, the focal plane is the area where the laser energy is most concentrated, which has an important influence on the processing effect of the material.

[0092] The focal plane of the laser generated by the ultrafast laser generator 1 is precisely controlled at the surface of the sapphire near the quartz glass. The laser energy concentration area is located at this specific surface position of the sapphire, which can more effectively process the surface of the sapphire. By setting the focal plane here, the laser energy can act more accurately on the sapphire surface, promote surface activation and other processes, and prepare for subsequent welding.

[0093] Step S1032, controlling the power of the laser generated by the ultrafast laser generator to be a first power, the scanning speed to be a first speed, the pulse frequency to be a first frequency, and the defocus amount to be a first defocus amount.

[0094] Scanning speed refers to the speed at which the laser beam moves on the surface of the material. The scanning speed affects the action time of the laser on each point of the material, which in turn affects the processing depth, width and overall processing efficiency.

[0095] A plurality of key parameters of the laser generated by the ultrafast laser generator 1 are set. The power is set to a first power, which is a suitable value determined according to factors such as specific material properties and processing requirements, so as to achieve effects such as surface activation without damaging the material.

[0096] The scanning speed is set to a first speed, which affects the scanning path and time of the laser on the sapphire surface, reducing local overheating or uneven processing.

[0097] The pulse frequency is set to a first frequency, which determines the emission rhythm of the laser pulses and promotes the movement and reaction of surface atoms.

[0098] The defocus amount is set to a first defocus amount, and the first defocus amount is selected to obtain a suitable spot size and energy distribution on the sapphire surface to achieve the best surface treatment effect, such as achieving the desired surface roughness, activation degree, etc.

[0099] In some embodiments, the first power is greater than or equal to 0.2 W and less than or equal to 1 W.

[0100] The specific size of the first power is not limited here, for example, it can be 0.2W, 0.3W, 0.4W, 0.5W, 0.6W, 0.7W, 0.8W, 0.9W, 1W, etc.

[0101] In some embodiments, the first speed is greater than or equal to 1 mm / s and less than or equal to 10 mm / s.

[0102] The specific size of the first speed is not limited here, for example, it can be 1mm / s, 2mm / s, 3mm / s, 4mm / s, 5mm / s, 6mm / s, 7mm / s, 8mm / s, 9mm / s, 10mm / s, etc.

[0103] In some embodiments, the first frequency is greater than or equal to 10 MHz and less than or equal to 20 MHz.

[0104] The specific size of the first power is not limited here, for example, it can be 10MHz, 11MHz, 12MHz, 13MHz, 14MHz, 15MHz, 16MHz, 17MHz, 18MHz, 19MHz, 20MHz, etc.

[0105] In some embodiments, the first defocus amount is greater than or equal to -5 μm and less than or equal to -1 μm.

[0106] The specific size of the first defocus amount is not limited herefrom, for example, it can be -5μm, -4.5μm, -4μm, -3.5μm, -3μm, -2.5μm, -2μm, -1.5μm, -1μm, etc.

[0107] In some embodiments, see Figure 2 , step S104 includes the following steps S1041 to S1042:

[0108] Step S1041, controlling the focal plane of the laser generated by the ultrafast laser generator to be at the bonding interface of the surfaces to be welded of the quartz glass and the sapphire.

[0109] The focal plane of the laser generated by the ultrafast laser generator 1 is controlled at the bonding interface of the surfaces to be welded of the quartz glass and sapphire. During the welding operation, the energy of the laser is concentrated on the junction of the two materials. In this way, the laser energy can directly act on the key area to be welded, promote the mutual diffusion and fusion of atoms between the sapphire and quartz glass at the interface, and achieve a more solid welding connection. When the focal plane is accurately located at the bonding interface, the laser can more effectively stimulate the chemical bonding reaction at the interface of the two materials, improving the quality and stability of welding.

[0110] Step S1042, controlling the power of the laser generated by the ultrafast laser generator to be a second power, the scanning speed to be a second speed, the pulse frequency to be a second frequency, and the defocus amount to be a second defocus amount. The second power is greater than the first power, and / or the second speed is greater than the first speed, and / or the second frequency is less than the first frequency, and / or the second defocus amount is greater than the first defocus amount.

[0111] The second power meets the demand for higher energy during welding. The second power is greater than the first power, providing more energy for the welding stage to melt and fuse the surfaces of sapphire and quartz glass to be welded together, so that the welding process proceeds smoothly.

[0112] The second speed is greater than the first speed. A higher scanning speed can improve welding efficiency while ensuring welding quality, and quickly complete the welding operation on the entire bonding interface.

[0113] The second frequency is lower than the first frequency. The lower pulse frequency may allow the material to absorb energy and conduct sufficient heat conduction and chemical reaction during each pulse of the laser, which is conducive to forming a good welding joint.

[0114] The second defocus amount is greater than the first defocus amount. The larger defocus amount may cause the laser to form a larger spot and a relatively more uniform energy distribution at the bonding interface, covering the entire welding area, reducing the situation where local energy is too high or too low, and improving the uniformity and reliability of welding.

[0115] In some embodiments, the second power is greater than or equal to 1 W and less than or equal to 10 W.

[0116] The specific size of the second power is not limited here, for example, it can be 1W, 2W, 3W, 4W, 5W, 6W, 7W, 8W, 9W, 10W, etc.

[0117] In some embodiments, the second speed is greater than or equal to 20 mm / s and less than or equal to 100 mm / s.

[0118] The specific size of the second speed is not limited here, for example, it can be 20mm / s, 30mm / s, 40mm / s, 50mm / s, 60mm / s, 70mm / s, 80mm / s, 90mm / s, 100mm / s, etc.

[0119] In some embodiments, the second frequency is greater than or equal to 0.5 MHz and less than or equal to 1 MHz.

[0120] The specific size of the second frequency is not limited here, for example, it can be 0.5 MHz, 0.6 MHz, 0.7 MHz, 0.8 MHz, 0.9 MHz, 1 MHz, etc.

[0121] In some embodiments, the second defocus amount is 0 μm.

[0122] In some embodiments, see Figure 2 The laser welding device 10 includes a fixture 4 and a multi-axis guide rail 5. The fixture 4 is arranged on the multi-axis guide rail 5, and the fixture 4 clamps the quartz glass and the sapphire. The multi-axis guide rail 5 can at least drive the fixture 4 to move in a first direction, a second direction and a third direction. The first direction intersects with the second direction, and the first direction intersects with the third direction.

[0123] The fixture 4 is a device for fixing and clamping the workpiece. In the laser welding device 10, the fixture 4 is specifically used to clamp the quartz glass and sapphire so that they maintain a stable position and posture during the welding process to ensure the accuracy and consistency of the welding operation. The design of the fixture 4 is usually customized according to the shape, size, material and other characteristics of the workpiece to provide good clamping force and positioning accuracy.

[0124] The multi-axis guide rail 5 is a mechanical device capable of realizing multi-directional motion control. It is usually composed of a guide rail and a slider, and the slider is driven by a motor or other driving device to move along different directions on the guide rail. The multi-axis guide rail 5 mentioned in the article can at least drive the fixture 4 to move in three directions, namely the first direction, the second direction and the third direction, and these three directions intersect with each other. Generally speaking, these three directions can correspond to the X, Y, and Z axis directions in three-dimensional space, realizing flexible movement and positioning of the fixture 4 in three-dimensional space.

[0125] The laser welding equipment 10 includes two important components, a fixture 4 and a multi-axis guide rail 5. The fixture 4 is arranged on the multi-axis guide rail 5, and its main function is to clamp the two materials to be welded, quartz glass and sapphire. The multi-axis guide rail 5 has the ability to drive the fixture 4 to move in multiple directions, at least in the first direction, the second direction and the third direction, and these directions intersect with each other. This design enables the fixture 4 to be flexibly adjusted in position in three-dimensional space. For example, in an actual welding operation, when it is necessary to accurately align the laser beam with a specific welding position of the quartz glass and sapphire, the position of the fixture 4 can be adjusted by the multi-axis guide rail 5 so that the workpiece is in a suitable welding position. In addition, the movement of the multi-axis guide rail 5 in the Z-axis direction can be used to adjust the defocus amount of the laser welding equipment 10.

[0126] In some embodiments, see Figure 2 and Figure 3 The clamp 4 includes a first clamping portion 41 and a second clamping portion 42 which are arranged opposite to each other, and a distance adjusting member 43 is arranged between the first clamping portion 41 and the second clamping portion 42, and the distance adjusting member 43 adjusts the distance between the first clamping portion 41 and the second clamping portion 42. One of the first clamping portion 41 and the second clamping portion 42 is provided with an opening 44, and the opening 44 exposes the surfaces to be welded of the quartz glass and the sapphire.

[0127] The first clamping part 41 and the second clamping part 42 are two main components of the clamp 4. The first clamping part 41 and the second clamping part 42 are arranged opposite to each other and work together to clamp the quartz glass and sapphire. The shape and structure of the first clamping part 41 and the second clamping part 42 are not limited here, and are specifically designed according to the shape and size of the workpiece to provide a suitable clamping surface and clamping force.

[0128] The distance adjusting member 43 is a member capable of adjusting the distance between the first clamping portion 41 and the second clamping portion 42. It can be a screw, a slider guide mechanism or other mechanical device capable of achieving distance adjustment, and by changing the relative position of the first clamping portion 41 and the second clamping portion 42, it can adapt to the clamping requirements of quartz glass and sapphire workpieces of different sizes.

[0129] Exemplarily, the distance adjusting member 43 is a screw disposed between the first clamping portion 41 and the second clamping portion 42 , the screw connecting the first clamping portion 41 and the second clamping portion 42 , and the distance between the first clamping portion 41 and the second clamping portion 42 is changed by rotating the screw insertion length.

[0130] The opening 44 is a specific area provided on the first clamping portion 41 or the second clamping portion 42 , through which the surfaces of the quartz glass and sapphire to be welded can be exposed, so that the laser can directly act on the welding position without being blocked by the clamp 4 .

[0131] The specific structure of the opening 44 is not limited here and is determined according to the shape of the surface to be welded.

[0132] In some embodiments, the opening 44 is adjustable, and the size and shape of the opening 44 can be changed through mechanical structure or electric control. When welding different types of workpieces or performing different welding processes, the opening 44 can be flexibly adjusted as needed to better meet the processing requirements of the laser. For example, for some workpieces that require a larger welding area, the opening 44 can be enlarged; for processes that require precise control of the laser irradiation range, the opening 44 can be adjusted to a specific shape, such as a circle, a square, or a strip.

[0133] In some embodiments, auxiliary optical elements, such as lenses or reflectors, are provided at the opening 44. These optical elements can focus, shape or guide the laser to further optimize the energy distribution and irradiation angle of the laser on the surface to be welded. For example, by installing a small focusing lens at the opening 44, the laser can form a smaller and more concentrated spot on the surface to be welded, thereby improving the welding accuracy and depth control capability.

[0134] In some embodiments, a pressure sensor and a displacement sensor are installed on the clamp 4 to monitor the clamping force and the displacement of the workpiece in real time. When clamping quartz glass and sapphire of different sizes or shapes, the sensor feeds data back to the control system, and the control system automatically adjusts the distance adjustment member 43 according to a preset algorithm to keep the clamping force within a suitable range and ensure the accurate position of the workpiece. For example, if a slight displacement of the workpiece is detected during the clamping process, the control system can automatically fine-tune the distance adjustment member 43 to increase the clamping force to stabilize the position of the workpiece.

[0135] The clamp 4 is mainly composed of a first clamping part 41 and a second clamping part 42 which are arranged opposite to each other, and they are connected by a distance adjusting part 43. When clamping the workpiece, the first clamping part 41 and the second clamping part 42 cooperate with each other to clamp and fix the quartz glass and sapphire. The distance adjusting part 43 can be adjusted according to the size of the workpiece, so that the clamp 4 can adapt to workpieces of different specifications. For example, when clamping larger quartz glass and sapphire, the distance between the first clamping part 41 and the second clamping part 42 can be increased by the distance adjusting part 43; for smaller workpieces, the distance is reduced to ensure a good clamping effect. At the same time, in order to facilitate the laser processing of the surface to be welded of the workpiece, an opening 44 is set in one of the first clamping part 41 and the second clamping part 42. The position and size of this opening 44 are carefully designed to accurately expose the part to be welded, so that the laser can be directly irradiated on the surface to be welded to achieve precise welding.

[0136] In the description of the present application, the description with reference to the terms "in one embodiment", "in some embodiments", "in other embodiments", "in yet other embodiments", or "exemplary" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present application. In the present application, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art may combine the different embodiments or examples described in the present application and the features of the different embodiments or examples without contradiction.

[0137] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application are included in the protection scope of the present application.

Claims

1. A quartz glass and sapphire welding method, applied to a quartz glass and sapphire welding system, characterized in that: The quartz glass and sapphire welding system comprises a laser welding device, wherein the laser welding device is provided with a welding area, and the quartz glass and sapphire welding method comprises: Cleaning the surface of the quartz glass and the surface of the sapphire; The quartz glass and the sapphire are stacked in the welding area of ​​the laser welding equipment so that the surface to be welded of the quartz glass and the surface to be welded of the sapphire are in contact with each other; Controlling the laser generated by the laser welding equipment to pass through the quartz glass to perform surface activation treatment on the surface to be welded of the sapphire; The laser welding equipment is controlled to weld the surface to be welded of the quartz glass and the surface to be welded of the sapphire after the surface activation treatment.

2. The method for welding quartz glass and sapphire according to claim 1, characterized in that: The cleaning of the surface of the quartz glass and the surface of the sapphire comprises: Immersing the quartz glass and the sapphire in an organic solvent for ultrasonic cleaning; The quartz glass and the sapphire were taken out and wiped with a dust-free cloth.

3. The method for welding quartz glass and sapphire according to claim 1, characterized in that: The laser welding equipment comprises an ultrafast laser generator, the wavelength of the laser generated by the ultrafast laser generator is greater than or equal to 1000nm and less than or equal to 1100nm; and / or, The pulse width of the laser generated by the ultrafast laser generator is greater than or equal to 0.3 ps and less than or equal to 1 ps.

4. The method for welding quartz glass and sapphire according to claim 1, characterized in that: The step of controlling the laser of the laser welding device to pass through the quartz glass to perform surface activation treatment on the surface of the sapphire to be welded comprises: Controlling the focal plane of the laser generated by the ultrafast laser generator to be the surface of the sapphire close to the quartz glass; The power of the laser generated by the ultrafast laser generator is controlled to be a first power, the scanning speed is a first speed, the pulse frequency is a first frequency, and the defocus amount is a first defocus amount.

5. The method for welding quartz glass and sapphire according to claim 4, characterized in that: The first power is greater than or equal to 0.2 W and less than or equal to 1 W; and / or, The first speed is greater than or equal to 1 mm / s and less than or equal to 10 mm / s; and / or, The first frequency is greater than or equal to 10 MHz and less than or equal to 20 MHz; and / or, The first defocus amount is greater than or equal to -5 μm and less than or equal to -1 μm.

6. The method for welding quartz glass and sapphire according to claim 4, characterized in that: The controlling the laser welding equipment to weld the surface to be welded of the quartz glass and the surface to be welded of the sapphire after the surface activation treatment comprises: Controlling the focal plane of the laser generated by the ultrafast laser generator to be at the bonding interface between the quartz glass and the surface to be welded of the sapphire; The power of the laser generated by the ultrafast laser generator is controlled to be a second power, the scanning speed is a second speed, the pulse frequency is a second frequency, and the defocus amount is a second defocus amount; wherein the second power is greater than the first power, and / or the second speed is greater than the first speed, and / or the second frequency is less than the first frequency, and / or the second defocus amount is greater than the first defocus amount.

7. The method for welding quartz glass and sapphire according to claim 6, characterized in that: The second power is greater than or equal to 1 W and less than or equal to 10 W; and / or, The second speed is greater than or equal to 20 mm / s and less than or equal to 100 mm / s; and / or, The second frequency is greater than or equal to 0.5 MHz and less than or equal to 1 MHz; and / or, The second defocus amount is 0 μm.

8. The method for welding quartz glass and sapphire according to claim 3, characterized in that: The laser welding equipment comprises an optical path system and a galvanometer; the laser generated by the ultrafast laser generator is transmitted to the galvanometer through the optical path system, and the galvanometer controls the direction and position of the laser generated by the ultrafast laser generator.

9. The method for welding quartz glass and sapphire according to claim 3, characterized in that: The laser welding equipment includes a fixture and a multi-axis guide rail, wherein the fixture is arranged on the multi-axis guide rail, and the fixture clamps the quartz glass and the sapphire; the multi-axis guide rail can at least drive the fixture to move in a first direction, a second direction and a third direction; wherein the first direction intersects with the second direction, and the first direction intersects with the third direction.

10. The method for welding quartz glass and sapphire according to claim 9, characterized in that: The clamp comprises a first clamping part and a second clamping part which are arranged opposite to each other, a distance adjusting member is arranged between the first clamping part and the second clamping part, and the distance adjusting member adjusts the distance between the first clamping part and the second clamping part; one of the first clamping part and the second clamping part is provided with an opening, and the opening exposes the surfaces to be welded of the quartz glass and the sapphire.

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