Gas Intake System for CVD Thin Film Deposition Reactor Chamber

Abstract

The present invention belongs to the technical field of semiconductor equipment, and specifically relates to an air intake system for a CVD thin film deposition reaction chamber. A gas homogenizing component is arranged on the top of each chamber unit, and two gas homogenizing disks of the gas homogenizing component are respectively sealed and connected to a cover plate, thereby forming a primary gas homogenizing chamber and a secondary gas homogenizing chamber. The primary gas homogenizing chamber is also provided with an energy dissipation component formed by an energy dissipation cone and an energy dissipation fence, so that when the reaction gas enters the interior of the cavity structure from the air inlet, the pressurized gas is depressurized and energy dissipated, so that it is fully mixed in the primary gas homogenizing chamber, thereby dissipating the energy of the reaction gas, and on the basis of energy dissipation, the vertically ejected airflow is turbulent and uniformized, and the reaction gas after mixing and dissipating the energy is uniformly entered into the second gas homogenizing chamber through a first release hole for further mixing and dissipating the energy, and enters the chamber through the second release hole and is uniformly deposited on the surface of a wafer, which is beneficial to improving the uniformity of thin film deposition.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor equipment, and in particular relates to an air intake system of a CVD thin film deposition reaction chamber. Background Art

[0002] In existing CVD (Chemical Vapor Deposition) thin film deposition equipment, the air intake of the reaction chamber is generally direct from the top, which causes the air inlet to be directly aligned with the center of the wafer, so that the airflow cannot be evenly distributed on the surface of the wafer. This will cause the wafer to be thick in the middle and thin at the edges, thereby affecting the uniformity of the wafer thin film deposition thickness, which is an important indicator of wafer coating quality.

[0003] It should be noted that this part of the present invention only provides background technology related to the present invention and does not necessarily constitute prior art or known technology. Summary of the invention

[0004] The object of the present invention is to provide an air intake system for a CVD thin film deposition reaction chamber, so as to overcome the existing problem that the uniformity of the thin film deposited in the CVD thin film deposition reaction chamber cannot meet the requirements.

[0005] In order to achieve the above object, an embodiment of the present invention provides an air intake system for a CVD thin film deposition reaction chamber, comprising:

[0006] A reaction chamber, wherein the reaction chamber includes at least one chamber unit; wherein the chamber unit includes: a chamber structure, a gas homogenizing component and a wafer support platform, wherein the wafer support platform is arranged in the chamber structure, and the gas homogenizing component cover is arranged on the chamber structure to form the chamber structure into a sealed reaction space; wherein the gas homogenizing component includes: a cover plate, a first gas homogenizing disk and a second gas homogenizing disk, wherein the edge of the first gas homogenizing disk is sealedly connected to the bottom surface of the cover plate to form a primary gas homogenizing chamber, an air inlet is arranged at the center of the cover plate, and the center of the first gas homogenizing disk faces the An energy dissipation cone assembly is provided on one side of the cover plate, and the energy dissipation cone assembly includes an energy dissipation cone and an energy dissipation fence, wherein one end of the energy dissipation cone protrudes toward the air inlet to form a conical structure, and the energy dissipation fence is arranged on the periphery of the energy dissipation cone; a plurality of first release holes are evenly arranged at the bottom of the first gas uniformizing disk; the second gas uniformizing disk surrounds the entire first gas uniformizing disk, and the edge of the second gas uniformizing disk is sealed and connected to the bottom surface of the cover plate to form a secondary gas uniformizing chamber, and a plurality of second release holes are evenly arranged at the bottom of the second gas uniformizing disk, and the second release holes are directly opposite to the wafer support platform;

[0007] An air intake main pipe, one end of which is connected to a reaction gas source, and the other end of which is connected to the air inlet of each of the air homogenizing components through an air intake branch pipe, and an air intake valve is provided on each of the air intake branch pipes.

[0008] Optionally, a spring base is provided between the bottom of the energy dissipation cone and the first air-distributing disk. Optionally, the surface of the first air-distributing disk between the energy dissipation cone and the energy dissipation fence is a frosted surface or provided with a rough surface coating; and / or, the surface of the second air-distributing disk facing the air inlet is a frosted surface or provided with a rough surface coating.

[0009] Optionally, a plurality of the first release holes near the central area are inclined inwardly toward the center of the second gas uniformizing disk, and a plurality of the first release holes near the edge area are diffused outwardly toward the edge of the second gas uniformizing disk.

[0010] Optionally, an energy dissipation release groove is formed between the energy dissipation cone and the energy dissipation fence, and the energy dissipation release groove is connected to the bottom ends of the energy dissipation cone and the energy dissipation fence by an arc-shaped smooth transition.

[0011] Optionally, there are multiple energy dissipation cones, one of which is located at the center of the first gas distribution disk, and the remaining energy dissipation cones are arranged step by step on the periphery in a circular array.

[0012] Optionally, multiple first release holes are distributed in a circular array at the bottom of the first gas uniforming disk, and the spacing between two adjacent first release holes at each level is equal; multiple second release holes are distributed in a multi-level circular array at the bottom of the second gas uniforming disk, and the spacing between two adjacent second release holes at each level is equal.

[0013] Optionally, the aperture of the first release hole is larger than the aperture of the second release hole.

[0014] Optionally, the orthographic projections of the first release holes on the second gas uniforming disk are all located between adjacent second release holes.

[0015] Optionally, the air intake system of the CVD thin film deposition reaction chamber further comprises: a control unit and an air flow parameter detection component; the air flow parameter detection component is arranged at the edge of the wafer support platform, and is used to detect the air flow parameters in the chamber structure;

[0016] The control unit is electrically connected to the air intake valve and the airflow parameter detection component, and is used to adjust the opening of the corresponding air intake valve according to the airflow parameters in different chamber units, so as to adjust the uniformity of the intake airflow of each chamber unit.

[0017] The embodiments of the present invention have at least the following technical effects:

[0018] The air intake system of the thin film deposition reaction chamber provided by the embodiment of the present invention is achieved by arranging a gas uniforming component on the top of each chamber unit, and the gas uniforming component includes a cover plate, a first gas uniforming disk and a second gas uniforming disk, and the two gas uniforming disks are respectively sealed and connected to the cover plate, so that a primary gas uniforming chamber is formed between the first gas uniforming disk and the cover plate, and a secondary gas uniforming chamber is formed between the second gas uniforming disk, the first gas uniforming disk and the cover plate, and the primary gas uniforming chamber is also provided with an energy dissipation component formed by an energy dissipation cone and an energy dissipation fence, so that when the reaction gas enters the interior of the chamber structure from the air inlet, the pressurized gas is depressurized and energy dissipated, so that it is fully mixed in the primary gas uniforming chamber, thereby dissipating energy of the reaction gas, and on the basis of energy dissipation, the vertically ejected airflow is turbulent and uniformized, and the reaction gas after mixing and energy dissipation passes through the first release hole to evenly enter the second gas uniforming chamber for further mixing and energy dissipation, and enters the chamber through the second release hole and is evenly deposited on the wafer surface, which is beneficial to improving the uniformity of thin film deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 An overall structural diagram of an air intake system of a CVD thin film deposition reaction chamber provided by an embodiment of the present invention;

[0021] Figure 2 A schematic diagram of the structure of a gas homogenizing component of a gas inlet system of a CVD thin film deposition reaction chamber provided in an embodiment of the present invention;

[0022] Figure 3 A schematic structural diagram of a first gas homogenizing disk of a gas homogenizing assembly of a gas inlet system of a CVD thin film deposition reaction chamber provided in an embodiment of the present invention;

[0023] Figure 4 A schematic structural diagram of a second gas homogenizing disk of a gas homogenizing assembly of a gas intake system of a CVD thin film deposition reaction chamber provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0024] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] Those skilled in the art will understand that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art in the field to which the present invention belongs. It should also be understood that terms such as those defined in common dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0026] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0027] In the description of the present invention, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0028] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0029] Combination Figures 1 to 4As shown, the gas intake system of the CVD thin film deposition reaction chamber provided in the embodiment of the present application includes: a reaction gas source, a gas intake main pipe 200 and a reaction chamber 400. Among them, the reaction gas source may include multiple special gases. In this embodiment, there are three special gases, namely special gas 110, special gas 120 and special gas 130. Different special gases are provided with corresponding gas valves (gas valve 101, gas valve 102 and gas valve 103, respectively) to achieve independent control of their respective flow rates. One end of the gas intake main pipe 200 is connected to each special gas pipeline, and the other end of the gas intake main pipe 200 is connected to the reaction chamber through the gas intake branch pipe 300 to achieve gas intake to the reaction chamber. Each gas intake branch pipe 300 is provided with a gas intake valve 301, so that different reaction chambers 400 can be independently controlled.

[0030] Specifically, the reaction chamber 400 includes at least one chamber unit 410. In the embodiment of the present application, two chamber units 410 are used as an example for illustration. The two chamber units 410 are arranged in parallel, and the two form an integral structure through the chamber shell. Among them, a single chamber unit 410 specifically includes: a chamber structure 411, a gas homogenizing component 412, and a wafer support platform 413. The wafer support platform 413 is arranged in the chamber structure 411 for placing and fixing the wafer so as to deposit a thin film on the surface of the wafer.

[0031] Further, the gas homogenizing component 412 is covered on the cavity structure 411, so that the cavity structure 411 forms a sealed reaction space. The gas homogenizing component 412 specifically includes: a cover plate 4121, a first gas homogenizing disk 4122 and a second gas homogenizing disk 4123. The size of the cover plate 4121 is larger than the size of the cavity structure 411. The cover plate 4121 can be used as a seal of the cavity structure 411, and also as a fixed substrate of the first gas homogenizing disk 4122 and the second gas homogenizing disk 4123, so that the first gas homogenizing disk 4122 and the second gas homogenizing disk 4123 can. Specifically, the edge of the first gas homogenizing disk 4122 is sealed and connected to the bottom surface of the cover plate 4121 to form a primary gas homogenizing chamber. The center of the cover plate 4121 is provided with an air inlet 302, and the air inlet 302 is connected to the air inlet main pipe 200 through the air inlet branch pipe 300, so that the reaction gas can enter the primary gas homogenizing chamber. Specifically, an energy dissipation cone assembly is provided on the side of the cover plate 4121 toward the center of the first gas uniforming disk 4122, and the energy dissipation cone assembly includes an energy dissipation cone and an energy dissipation fence 4122b. The energy dissipation cone 4122a protrudes at one end toward the air inlet 302 to form a conical structure, and the energy dissipation fence 4122b is arranged on the periphery of the energy dissipation cone 4122a, and an annular energy dissipation release groove 4122c is formed between the two. In this way, the reaction gas entering from the air inlet 302 faces the energy dissipation cone, flows downward along the surface of the energy dissipation cone to the energy dissipation release groove 4122c, and then flows upward along the side wall of the energy dissipation fence 4122b, and finally further dissipates energy in the space of the first-level gas uniforming chamber, thereby avoiding uneven thickness caused by the airflow being concentrated on the center of the wafer.

[0032] A plurality of first release holes 4122d are evenly arranged at the bottom of the first gas-homogenizing disk 4122, so that the reaction gas after energy dissipation and uniform mixing in the first gas-homogenizing chamber 4122e flows out from the first release holes 4122d. The second gas-homogenizing disk 4123 surrounds the entire first gas-homogenizing disk 4122, and the edge of the second gas-homogenizing disk 4123 is sealed and connected to the bottom surface of the cover plate 4121 to form a secondary gas-homogenizing chamber, and the reaction gas flowing out from the first release hole 4122d enters the second gas-homogenizing chamber 4123b for further energy dissipation, and a plurality of second release holes 4123a are evenly arranged at the bottom of the second gas-homogenizing disk 4123, and the second release holes 4123a are directly opposite to the wafer support platform 413, so that the reaction gas in the secondary gas-homogenizing chamber flows out from the second release holes 4123a evenly into the cavity structure 411 to be deposited on the wafer surface. Optionally, the diameter of the bottom of the second gas uniforming disk 4123 may be equal to the area of ​​the wafer supporting platform 413 , or slightly larger than the area of ​​the wafer supporting platform 413 , so as to better cover the wafer.

[0033] The air intake system of the thin film deposition reaction chamber provided by the embodiment of the present invention is provided with a gas homogenizing component 412 on the top of each chamber unit 410, and the gas homogenizing component 412 includes a cover plate 4121, a first gas homogenizing disk 4122 and a second gas homogenizing disk 4123, and the two gas homogenizing disks are respectively sealed and connected to the cover plate 4121, so that a primary gas homogenizing chamber is formed between the first gas homogenizing disk 4122 and the cover plate 4121, and a secondary gas homogenizing chamber is formed between the second gas homogenizing disk 4123, the first gas homogenizing disk 4122 and the cover plate 4121, and the primary gas homogenizing chamber is also provided with an energy dissipation cone and an energy dissipation fence. The energy dissipation component formed by 4122b reduces the pressure and dissipates the energy of the pressurized gas when the reaction gas enters the cavity structure 411 from the air inlet 302, so that it is fully mixed in the first-level uniform gas chamber, thereby dissipating the energy of the reaction gas. On the basis of energy dissipation, the vertically ejected airflow is turbulent and uniformized. The reaction gas after mixing and dissipating the energy evenly enters the second uniform gas chamber 4123b through the first release hole 4122d for further mixing and dissipation, and enters the chamber through the second release hole 4123a to be evenly deposited on the wafer surface, which is beneficial to improving the uniformity of thin film deposition.

[0034] Optionally, a spring base is provided between the bottom of the energy dissipation cone and the first gas-distributing disk 4122. The upper end of the spring base is connected to the bottom of the energy dissipation cone 4122a, and the lower end of the spring base is connected to the surface of the first gas-distributing disk 4122 facing the cover plate 4121. When the reaction gas from the air inlet 302 flows toward the energy dissipation cone 4122a, the energy dissipation cone 4122a can be contracted downward under the action of the airflow, thereby further releasing the impact force of the airflow and improving the effect of energy dissipation.

[0035] In some embodiments, the surface of the first gas-distributing disk 4122 between the energy-dissipating cone 4122a and the energy-dissipating fence 4122b (equivalent to the bottom of the energy-dissipating release groove 4122c) is a frosted surface or provided with a rough surface coating, which can increase the airflow collision area, thereby enhancing the airflow turbulence effect, so as to further dissipate the energy of the airflow and better mix it. In addition, the area of ​​the first gas-distributing disk 4122 outside the energy-dissipating fence 4122b is also a frosted surface or provided with a rough surface coating.

[0036] Optionally, the surface of the second air homogenizing disk 4123 facing the air inlet 302 is a frosted surface or provided with a rough surface coating, which can further increase the airflow collision area, thereby improving the airflow turbulence effect, further dissipating energy and better mixing the airflow.

[0037] Optionally, several first release holes 4122d near the central area are inclined inwardly toward the center of the second air uniforming disk 4123, and several first release holes 4122d near the edge area are diffused outwardly toward the edge of the second air uniforming disk 4123, that is, the first release holes 4122d near the energy dissipation fence 4122b are inclined toward the center of the second air uniforming disk 4123, and the first release holes 4122d near the edge are inclined toward the edge of the second air uniforming disk 4123. Since the area of ​​the bottom of the second air uniforming disk 4123 is larger than the area of ​​the bottom of the first air uniforming disk 4122, the airflow in the first air uniforming chamber can be more evenly dispersed in various areas of the second air uniforming chamber, thereby improving the energy dissipation and mixing effects of the airflow.

[0038] Optionally, the energy dissipation release groove 4122c is located between the energy dissipation cone 4122a and the energy dissipation fence 4122b, and the energy dissipation release groove 4122c and the bottom ends of the energy dissipation cone 4122a and the energy dissipation fence 4122b are connected by an arc-shaped smooth transition, which is conducive to the smoother upward circulation of the air flow after passing through the energy dissipation release groove 4122c, thereby better mixing in the first uniform air chamber 4122e.

[0039] Optionally, a plurality of raised structures (not shown in the figure) are arranged at intervals at the bottom of the energy dissipation release groove 4122c, and the plurality of raised structures are evenly distributed around the energy dissipation cone 4122a. The raised structures are hemispherical structures, which can increase the energy dissipation and mixing effects of the airflow while not affecting the fluidity of the airflow too much.

[0040] Optionally, there are multiple energy dissipation cones in this embodiment, one of which is located at the center of the first air dissipation disk 4122, and the remaining energy dissipation cones 4122a are arranged in a circular array at the periphery. For example, a larger energy dissipation cone 4122a is arranged in the middle, and multiple small energy dissipation cones 4122a are evenly arranged around the energy dissipation cone 4122a, and adjacent energy dissipation cones 4122a maintain a certain distance from each other, so that the area between adjacent energy dissipation cones 4122a and the area between the peripheral energy dissipation cones 4122a and the energy dissipation fence 4122b is equivalent to dispersing an entire energy dissipation area into multiple small energy dissipation areas, thus forming multi-level energy dissipation, which is more conducive to increasing the airflow turbulence effect.

[0041] In some embodiments, a plurality of first release holes 4122d are distributed in a circular array at the bottom of the first air homogenizing disk 4122, and the spacing between two adjacent first release holes 4122d at each level is equal, so that the airflow enters the second air homogenizing chamber 4123b more evenly.

[0042] Optionally, multiple second release holes 4123a are distributed in a multi-level circular array at the bottom of the second gas uniforming disk 4123, and the spacing between two adjacent second release holes 4123a at each level is equal. This arrangement is conducive to more uniform distribution of airflow in the corresponding cavity structure 411, thereby improving the uniformity of thin film deposition on the wafer surface.

[0043] Optionally, the diameter of the first release hole 4122d is larger than the diameter of the second release hole 4123a. For example, the aperture of the first release hole 4122d is twice the aperture of the second release hole 4123a. Because the space in the first uniform gas chamber 4122e is relatively small, such a larger first release hole 4122d can prevent the reaction gas with a larger airflow pressure from forming blockage in the first uniform gas chamber 4122e, thereby improving the flow efficiency of the entire airflow, which is beneficial to improving the efficiency of thin film deposition.

[0044] Optionally, the orthographic projections of the first release holes 4122d on the second gas homogenizing disk 4123 are all located between adjacent second release holes 4123a, that is, the first release holes 4122d and the second release holes 4123a are staggered, so that the reaction gas can be fully dissipated and mixed in the second gas homogenizing chamber 4123b before flowing out from the second release holes 4123a.

[0045] Optionally, the air intake system of the CVD thin film deposition reaction chamber provided in an embodiment of the present invention further includes: a control unit and an airflow parameter detection component; the airflow parameter detection component is arranged at the edge of the wafer support platform 413, and is used to detect the airflow parameters in the cavity structure 411.

[0046] Specifically, the control unit is electrically connected to the intake valve and the airflow parameter detection component, and is used to adjust the opening of the corresponding intake valve according to the airflow parameters in different chamber units 410 to adjust the uniformity of the intake airflow of each chamber unit 410.

[0047] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific conditions. In the description of this specification, specific features, structures, materials or characteristics can be combined in a suitable manner in any one or more embodiments or examples.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An air intake system for a CVD thin film deposition reaction chamber, characterized in that: include: A reaction chamber, wherein the reaction chamber includes at least one chamber unit; wherein the chamber unit includes: a chamber structure, a gas homogenizing component and a wafer support platform, wherein the wafer support platform is arranged in the chamber structure, and the gas homogenizing component cover is arranged on the chamber structure to form the chamber structure into a sealed reaction space; wherein the gas homogenizing component includes: a cover plate, a first gas homogenizing disk and a second gas homogenizing disk, wherein the edge of the first gas homogenizing disk is sealedly connected to the bottom surface of the cover plate to form a primary gas homogenizing chamber, an air inlet is arranged at the center of the cover plate, and the center of the first gas homogenizing disk faces the An energy dissipation cone assembly is provided on one side of the cover plate, and the energy dissipation cone assembly includes an energy dissipation cone and an energy dissipation fence, wherein one end of the energy dissipation cone protrudes toward the air inlet to form a conical structure, and the energy dissipation fence is arranged on the periphery of the energy dissipation cone; a plurality of first release holes are evenly arranged at the bottom of the first gas uniformizing disk; the second gas uniformizing disk surrounds the entire first gas uniformizing disk, and the edge of the second gas uniformizing disk is sealed and connected to the bottom surface of the cover plate to form a secondary gas uniformizing chamber, and a plurality of second release holes are evenly arranged at the bottom of the second gas uniformizing disk, and the second release holes are directly opposite to the wafer support platform; An air intake main pipe, one end of which is connected to a reaction gas source, and the other end of which is connected to the air inlet of each of the air homogenizing components through an air intake branch pipe, and an air intake valve is provided on each of the air intake branch pipes.

2. The air intake system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: A spring base is arranged between the bottom of the energy dissipation cone and the first air homogenizing disk.

3. The air intake system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: The surface of the first uniform air disk between the energy dissipation cone and the energy dissipation fence is a frosted surface or is provided with a rough surface coating; And / or, the surface of the second air homogenizing disk facing the air inlet is a frosted surface or is provided with a rough surface coating.

4. The air intake system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: A plurality of the first release holes near the central area are inclined inwardly toward the center of the second gas uniformizing disk, and a plurality of the first release holes near the edge area are diffused outwardly toward the edge of the second gas uniformizing disk.

5. The gas inlet system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: An energy dissipation release groove is formed between the energy dissipation cone and the energy dissipation fence, and the energy dissipation release groove is connected to the bottom ends of the energy dissipation cone and the energy dissipation fence by an arc-shaped smooth transition.

6. The gas inlet system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: There are multiple energy dissipation cones, one of which is located at the center of the first uniform air disk, and the remaining energy dissipation cones are arranged step by step on the periphery in a circular array.

7. The gas inlet system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: The plurality of first release holes are distributed in a circular array at the bottom of the first gas-distributing disk, and the spacing between two adjacent first release holes at each level is equal; The plurality of second release holes are distributed in a multi-stage circular array at the bottom of the second gas uniforming disk, and the spacing between two adjacent second release holes in each stage is equal.

8. The gas inlet system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: The hole diameter of the first release hole is larger than the hole diameter of the second release hole.

9. The gas inlet system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: The orthographic projections of the first release holes on the second gas uniforming disk are all located between adjacent second release holes.

10. The gas inlet system of the CVD thin film deposition reaction chamber according to claim 1, characterized in that: Also includes: A control unit and an airflow parameter detection component; the airflow parameter detection component is arranged at the edge of the wafer support platform and is used to detect the airflow parameters in the cavity structure; The control unit is electrically connected to the air intake valve and the airflow parameter detection component, and is used to adjust the opening of the corresponding air intake valve according to the airflow parameters in different chamber units, so as to adjust the uniformity of the intake airflow of each chamber unit.

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