Mask plate line edge correction method and device, equipment, storage medium and product

Abstract

The invention discloses a mask plate line edge correction method and device, equipment, a storage medium and a product, relates to the technical field of mask plate manufacturing, and discloses a mask plate line edge correction method which comprises the steps that the first line edge roughness of a first mask plate to be processed is received; judging whether the first line edge roughness meets a preset line edge roughness range or not; and if the first line edge roughness does not meet the line edge roughness range, activating a horizontal alternating electric field, so that the horizontal alternating electric field controls pre-generated plasma to perform plasma etching on all line edges of the first to-be-processed mask plate, and obtaining a target mask plate of which the line edges are corrected. According to the method, the alternating electric field in the horizontal direction is used for controlling the plasma to carry out plasma etching correction on all the line edges of the to-be-processed mask plate needing to be improved, so that the corrected mask plate is obtained, line edge correction of the mask plate with a large area and unsmooth pattern line edges is achieved, and finally the production cost is remarkably reduced.

Description

Technical Field

[0001] The present application relates to the field of mask manufacturing technology, and in particular to a mask line edge correction method, device, equipment, storage medium and product. Background Art

[0002] In the semiconductor manufacturing process, the quality of the mask pattern plays a vital role in the functionality and reliability of the final product. Line edge roughness is one of the key indicators to measure the quality of the mask pattern.

[0003] Ideally, the edges of the pattern lines of the mask should be highly smooth to ensure accurate transfer of the pattern during the photolithography process. However, in the actual photolithography and development process, due to various factors such as material inhomogeneity, equipment precision limitations, chemical treatment fluctuations, etc., the edges of the pattern lines of the mask often fluctuate irregularly, that is, the roughness of the edges increases. In the prior art, when the edges of the pattern lines of a large area of ​​the mask are not smooth, it can only be scrapped and redone, which greatly increases the production cost.

[0004] Therefore, how to solve the problem of uneven edges of large-area graphics lines on the mask is a problem that needs to be solved urgently.

[0005] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention

[0006] The main purpose of the present application is to provide a mask line edge correction method, device, equipment, storage medium and product, aiming to solve the technical problem of uneven line edges of large-area graphics on the mask.

[0007] To achieve the above object, the present application proposes a mask etching method, the method comprising:

[0008] Obtaining a first line edge roughness of a first mask to be processed;

[0009] Determining whether the first line edge roughness meets a preset condition;

[0010] If the first line edge roughness does not meet the preset condition, the first mask to be processed is plasma etched by a preset horizontal alternating electric field to obtain a target mask.

[0011] In one embodiment, the step of activating the horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction includes:

[0012] Obtaining the direction of the edge of the line to be processed of the first mask to be processed;

[0013] The alternating electric field corresponding to the direction of the line edge to be processed is activated so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain a target mask.

[0014] In one embodiment, the step of activating the alternating electric field corresponding to the direction of the line edge to be processed so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain the target mask includes:

[0015] Obtaining the X-axis direction and the Y-axis direction of the line edge direction to be processed;

[0016] activating the X-axis alternating electric field corresponding to the X-axis direction, so that the X-axis alternating electric field controls the plasma to perform plasma etching along the X-axis to-be-processed line edge of the first to-be-processed mask;

[0017] When the on time of the X-axis alternating electric field reaches a preset first processing time, the X-axis alternating electric field is turned off to obtain a second mask to be processed;

[0018] activating the Y-axis alternating electric field corresponding to the Y-axis direction, so that the Y-axis alternating electric field controls the plasma to perform plasma etching along the Y-axis to-be-processed line edge of the first to-be-processed mask;

[0019] When the on time of the Y-axis alternating electric field reaches a preset second processing time, the Y-axis alternating electric field is turned off to obtain a target mask.

[0020] In one embodiment, the step of activating the alternating electric field corresponding to the direction of the line edge to be processed so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain the target mask includes:

[0021] Obtaining the graphic data and process parameters of the target mask;

[0022] Based on the graphic data and the process parameters, virtually measure the plasma density in the etching chamber to determine a density measurement value;

[0023] According to the density measurement value, a target electric field power required for a preset protective sheath thickness is calculated through a preset sheath generation model;

[0024] Obtaining the X-axis direction and the Y-axis direction of the line edge direction to be processed;

[0025] According to the target electric field power, the X-axis alternating electric field is activated to generate a Y-axis line edge protection sheath layer, and when the activation time of the X-axis alternating electric field reaches a preset first processing time, the X-axis alternating electric field is turned off to obtain a second mask to be processed, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the Y-axis line edge protection sheath layer blocks the plasma from etching the Y-axis line edge to be processed;

[0026] According to the target electric field power, the Y-axis alternating electric field is activated to generate an X-axis line edge protection sheath layer, and when the on time of the Y-axis alternating electric field reaches a preset second processing time, the Y-axis alternating electric field is turned off to obtain a target mask, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the X-axis line edge protection sheath layer blocks the plasma from etching the X-axis line edge to be processed.

[0027] In one embodiment, before the step of receiving the first line edge roughness of the first mask to be processed, the step further includes:

[0028] Activating the surrounding coil to obtain an activation magnetic field, an induced electric field and plasma, wherein the plasma is obtained by accelerating electrons by the activation magnetic field and the induced electric field generated by the activated surrounding coil;

[0029] According to the preset pattern to be etched, the plasma is controlled by the activation magnetic field and the induced electric field to perform plasma etching in a vertical direction on the preset initial mask to obtain a first mask to be processed.

[0030] In one embodiment, the step of activating the horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction further includes:

[0031] Acquiring a second line edge roughness of the target mask;

[0032] Determining whether the second line edge roughness meets a preset line edge roughness range;

[0033] If the second line edge roughness does not meet the preset line edge roughness range, plasma etching is performed on all line edges of the target mask through a preset horizontal alternating electric field, and the process returns to the step of obtaining the second line edge roughness of the target mask until the second line edge roughness of the target mask meets the preset conditions, thereby obtaining the target mask that meets the preset conditions.

[0034] In addition, to achieve the above-mentioned purpose, the present application also proposes a mask line edge correction device, the mask line edge correction device comprising:

[0035] A receiving module, used for receiving a first line edge roughness of a first mask to be processed;

[0036] A judging module, used for judging whether the first line edge roughness satisfies a preset line edge roughness range;

[0037] The execution module is used to activate the horizontal alternating electric field if the first line edge roughness does not meet the line edge roughness range, so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction.

[0038] In addition, to achieve the above-mentioned purpose, the present application also proposes a mask line edge correction device, which includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the mask line edge correction method as described above.

[0039] In addition, to achieve the above-mentioned purpose, the present application also proposes a storage medium, which is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the mask line edge correction method described above are implemented.

[0040] In addition, to achieve the above-mentioned purpose, the present application also provides a computer program product, which includes a computer program. When the computer program is executed by a processor, the steps of the mask line edge correction method described above are implemented.

[0041] One or more technical solutions proposed in this application have at least the following technical effects:

[0042] Compared with the related art, when a large area of ​​graphic line edges are not smooth on the mask, the mask has to be scrapped and redone, which greatly increases the production cost. In the present application, a first line edge roughness of a first mask to be processed is received; whether the first line edge roughness satisfies a preset line edge roughness range is determined; if the first line edge roughness does not satisfy the line edge roughness range, a horizontal alternating electric field is activated so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed, thereby obtaining a target mask with completed line edge correction. It is understandable that the present application proposes to perform plasma etching on the first mask plate to be processed using an alternating electric field in the horizontal direction. When the first line edge roughness does not meet the preset line edge roughness range, the alternating electric field in the horizontal direction is activated to perform plasma etching on all line edges of the first mask plate to be processed. Therefore, the first line edge roughness is judged by the preset line edge roughness range to determine whether the first line edge roughness needs to be improved, and then all line edges of the mask plate to be processed that need to be improved are plasma etched for correction to obtain a corrected mask plate, thereby achieving line edge correction of a mask plate with rough line edges of a large area of ​​graphics, and ultimately achieving a significant reduction in production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0044] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0045] Figure 1 A schematic diagram of a process flow provided for the first embodiment of the mask line edge correction method of the present application;

[0046] Figure 2 A schematic diagram of an etching chamber layout provided for an embodiment of the mask line edge correction method of the present application;

[0047] Figure 3 A diagram of the structure of the lower electrode provided in an embodiment of the mask line edge correction method of the present application;

[0048] Figure 4 A schematic diagram of plasma modified line roughness provided for an embodiment of the mask line edge correction method of the present application;

[0049] Figure 5 A flow chart of a method for improving line roughness by plasma etching provided in an embodiment of the mask line edge correction method of the present application;

[0050] Figure 6 A top view of the barrier layer generation mechanism provided in the embodiment of the mask line edge correction method of the present application;

[0051] Figure 7 This is a schematic diagram of the module structure of the mask line edge correction device according to an embodiment of the present application;

[0052] Figure 8 A schematic diagram of the device structure of the hardware operating environment involved in the mask line edge correction method of the embodiment of the present application.

[0053] Description of Figure Numbers:

[0054] 1. Quartz substrate; 2. Chromium layer; 3. Horizontal alternating power supply electrode;

[0055] 4. ICP coil; 5. Plasma gas; 6. Lower electrode;

[0056] 7. Carrier; 8. Chrome layer lines; 9. Electronics;

[0057] 10. Ionized particles; 11. Photoresist.

[0058] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0059] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0060] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0061] The main solution of the embodiment of the present application is: receiving the first line edge roughness of a first mask to be processed; judging whether the first line edge roughness meets a preset line edge roughness range; if the first line edge roughness does not meet the line edge roughness range, activating a horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed, so as to obtain a target mask with completed line edge correction.

[0062] In this embodiment, the present application uses a mask line edge correction device as the execution body. For the convenience of description, it is specifically described below as "device".

[0063] According to the prior art, when it is found that the line roughness of the mask is not good after etching, if only a small part of the line edge is not smooth, laser repair can be used to directionally remove the protruding part; but when a large area of ​​the graphic line edge is not smooth, the current mask can only be scrapped and the photolithography development process must be re-optimized to redo a new mask, which greatly increases production costs.

[0064] The present application provides a solution, which proposes to use a horizontal alternating electric field to perform plasma etching on a first mask to be processed. When the first line edge roughness does not meet the preset line edge roughness range, the horizontal alternating electric field is activated to perform plasma etching on all line edges of the first mask to be processed. Therefore, the first line edge roughness is judged by the preset line edge roughness range to determine whether the first line edge roughness needs to be improved, and then all line edges of the mask to be processed that need to be improved are plasma etched for correction to obtain a corrected mask, thereby achieving line edge correction of a mask with rough line edges of a large area of ​​graphics, and ultimately achieving a significant reduction in production costs.

[0065] Based on this, the embodiment of the present application provides a mask line edge correction method, referring to Figure 1 , Figure 1 This is a flow chart of the first embodiment of the mask line edge correction method of the present application.

[0066] In this embodiment, the mask line edge correction method includes steps S10 to S30:

[0067] Step S10, receiving a first line edge roughness of a first mask to be processed;

[0068] It should be noted that the first mask to be processed is an optical mold composed of a metal layer film with information such as graphics and text recorded on the surface and a high-purity fused quartz or other transparent material substrate. It is widely used in microelectronic processing or semiconductor production exposure processes. The mask to be processed refers to a mask used to pattern the wafer in the semiconductor manufacturing process. The mask is designed with specific graphics and structures, which are used to transfer these graphics and structures to the wafer in subsequent photolithography, etching and other process steps. The mask to be processed is usually composed of a transparent substrate and an opaque shielding layer, wherein the transparent substrate is usually quartz glass or other transparent materials, and the shielding layer is usually chromium or other opaque metals. The graphics and structures of the mask to be processed form corresponding patterns on the wafer through the photoresist exposure and development process, thereby realizing the processing and treatment of the wafer.

[0069] In addition, it should be noted that the first line edge roughness is the microscopic unevenness of the edge of the metal wire or conductive circuit in the integrated circuit generated by the irregular fluctuation of the image edge formed during the photolithography process due to the fluctuation of the light source and the lens defects. When the developer is used to process the photoresist, the concentration, temperature, and development time of the developer will also affect the unevenness of the edge of the photoresist pattern. Specifically, the line edge roughness is a measure of the degree to which the edge profile of the metal line deviates from the ideal straight line. The line edge roughness has a significant impact on the performance and reliability of the integrated circuit because it affects the resistance, current distribution, and fracture risk of the metal line under thermal cycling and mechanical stress. Therefore, in advanced semiconductor manufacturing processes, it is crucial to control and reduce the line edge roughness.

[0070] It should be noted that by using specialized optical instruments or imaging systems to perform high-resolution imaging and analysis of the pattern on the mask to quantify the microscopic unevenness of the edges of the conductive lines on the mask, the line edge roughness of the mask can be obtained, which is used to evaluate the quality of the mask, optimize the manufacturing process, and predict the performance and reliability of the mask in actual applications.

[0071] The above is only a feasible implementation of step S10 provided in this embodiment, and this embodiment does not specifically limit the specific implementation of step S10.

[0072] Step S20, determining whether the first line edge roughness meets a preset line edge roughness range;

[0073] It should be noted that the first line edge roughness is the microscopic unevenness of the edge of the metal wire or conductive circuit in the integrated circuit generated by the irregular fluctuation of the image edge formed during the photolithography process due to the fluctuation of the light source and the lens defect. The line edge roughness value of a specific area on the mask is obtained through photomask observation equipment and image processing technology. The line edge roughness range is a pre-set allowable line edge roughness range based on process requirements and product quality standards. This range is usually determined based on statistical data analysis and engineering experience.

[0074] It can be understood that through this judgment process, the manufacturing quality of the mask can be effectively monitored and controlled to ensure its reliability and performance in integrated circuit manufacturing.

[0075] Step S30, if the first line edge roughness does not meet the line edge roughness range, activating the horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction.

[0076] It should be noted that the first line edge roughness refers to the line edge roughness value of a specific area on the mask obtained by a photomask observation device, and the line edge roughness range refers to a pre-set allowable line edge roughness value range determined based on process requirements and product quality standards.

[0077] In addition, it should be noted that the horizontal alternating electric field refers to an electric field whose direction changes alternately in the horizontal plane, which is used to control the behavior and distribution of plasma. The plasma refers to a group of charged particles that have been generated before plasma etching. The first mask to be processed refers to a mask that needs to be corrected for line edges, on which specific graphics and structures are designed for subsequent lithography and etching processes. All line edges refer to the edge portions of all conductive lines on the mask, which need to be corrected for roughness. The target mask refers to a mask that reaches the expected line edge roughness standard after plasma etching and line edge correction, and can be used in subsequent semiconductor manufacturing processes.

[0078] It is understandable that large-area poor graphic edges usually refer to defects such as unevenness, burrs, and gaps on the edges of the graphics on the mask during the semiconductor manufacturing process. These defects may affect the subsequent lithography and etching processes, resulting in reduced chip performance or even failure. When the detected line edge roughness does not meet the predetermined standard, the plasma is controlled by activating a horizontal alternating electric field to perform precise plasma etching on the line edge of the mask, thereby correcting the line edge roughness. The quality of the mask is improved to ensure its performance and reliability in integrated circuit manufacturing, and ultimately the target mask is obtained. By precisely controlling the properties of the plasma and the etching conditions, the material on the mask can be effectively removed, thereby improving the quality of the graphic edge.

[0079] In a feasible implementation, step S30 may include:

[0080] Obtaining the X-axis direction and the Y-axis direction of the line edge direction to be processed;

[0081] activating the X-axis alternating electric field corresponding to the X-axis direction, so that the X-axis alternating electric field controls the plasma to perform plasma etching along the X-axis to-be-processed line edge of the first to-be-processed mask;

[0082] When the on time of the X-axis alternating electric field reaches a preset first processing time, the X-axis alternating electric field is turned off to obtain a second mask to be processed;

[0083] activating the Y-axis alternating electric field corresponding to the Y-axis direction, so that the Y-axis alternating electric field controls the plasma to perform plasma etching along the Y-axis to-be-processed line edge of the first to-be-processed mask;

[0084] When the on time of the Y-axis alternating electric field reaches a preset second processing time, the Y-axis alternating electric field is turned off to obtain a target mask.

[0085] It should be noted that the direction of the line edge to be processed refers to the direction of the line edge on the mask that needs to be plasma etched, which usually corresponds to the edge of the pattern on the mask. The X-axis direction refers to the horizontal direction in the two-dimensional coordinate system, which is used to define one dimension of the line edge to be processed. The Y-axis direction refers to the vertical direction in the two-dimensional coordinate system, which is used to define the other dimension of the line edge to be processed. The X-axis alternating electric field refers to an electric field that changes alternately in the horizontal direction, which is used to control the behavior and distribution of plasma in the X-axis direction. The plasma refers to a group of charged particles generated by gas discharge and other methods, which is used to etch and modify the mask. The first mask to be processed refers to a mask that needs to be corrected for line edges, on which specific patterns and structures are designed. The X-axis line edge to be processed refers to the line edge portion of the mask that needs to be plasma etched in the X-axis direction.

[0086] In addition, it should be noted that the first processing duration refers to the pre-set length of time that the X-axis alternating electric field is turned on, which is used to control the duration of plasma etching. The second mask to be processed refers to the mask after plasma etching in the X-axis direction, and its line edge roughness in the X-axis direction has been corrected, but processing in other directions is still required. The Y-axis alternating electric field refers to an electric field that alternates in the vertical direction, which is used to control the behavior and distribution of plasma in the Y-axis direction. The Y-axis line edge to be processed refers to the line edge portion of the mask that needs to be plasma etched in the Y-axis direction. The second processing duration refers to the pre-set length of time that the Y-axis alternating electric field is turned on, which is used to control the duration of plasma etching. The target mask refers to a mask that reaches the expected line edge roughness standard after plasma etching in the X-axis and Y-axis directions, and can be used in subsequent semiconductor manufacturing processes.

[0087] It can be understood that, first, the line edge direction on the mask that needs to be plasma-etched is determined and decomposed into the X-axis and Y-axis directions in the two-dimensional coordinate system. Then, the X-axis alternating electric field that alternates in the horizontal direction is activated, and the electric field can control the behavior and distribution of the plasma in the X-axis direction. The plasma is controlled by the X-axis alternating electric field, and the line edge that needs to be processed in the X-axis direction on the mask is plasma-etched to improve its line edge roughness. When the X-axis alternating electric field is turned on for a predetermined first processing time, the X-axis alternating electric field is turned off and the plasma etching process in the X-axis direction is stopped. After the processing in the X-axis direction, a new mask state is obtained, that is, the second mask to be processed, at which time the line edge roughness in the X-axis direction is corrected, but processing in other directions is still required. Next, the Y-axis alternating electric field that alternates in the vertical direction is activated, and the electric field can control the behavior and distribution of the plasma in the Y-axis direction. The plasma is controlled by the Y-axis alternating electric field to perform plasma etching on the line edges on the mask that need to be processed in the Y-axis direction to improve the roughness of the line edges. When the Y-axis alternating electric field is turned on for a preset second processing time, the Y-axis alternating electric field is turned off to stop the plasma etching process in the Y-axis direction. After processing in the X-axis and Y-axis directions, the final target mask is obtained, which effectively improves the line edge quality of the mask, ensures the performance and reliability of the mask in integrated circuit manufacturing, and can be used in subsequent semiconductor manufacturing processes.

[0088] In this embodiment, the horizontal alternating electric field is activated to control plasma to perform plasma etching on the line edge of the mask, thereby solving the problem of roughness of the line edge of the mask and ensuring its performance and reliability in integrated circuit manufacturing.

[0089] In another feasible implementation, step S30 may include:

[0090] Obtaining the graphic data and process parameters of the target mask;

[0091] Based on the graphic data and the process parameters, virtually measure the plasma density in the etching chamber to determine a density measurement value;

[0092] According to the density measurement value, a target electric field power required for a preset protective sheath thickness is calculated through a preset sheath generation model;

[0093] Obtaining the X-axis direction and the Y-axis direction of the line edge direction to be processed;

[0094] According to the target electric field power, the X-axis alternating electric field is activated to generate a Y-axis line edge protection sheath layer, and when the activation time of the X-axis alternating electric field reaches a preset first processing time, the X-axis alternating electric field is turned off to obtain a second mask to be processed, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the Y-axis line edge protection sheath layer blocks the plasma from etching the Y-axis line edge to be processed;

[0095] According to the target electric field power, the Y-axis alternating electric field is activated to generate an X-axis line edge protection sheath layer, and when the on time of the Y-axis alternating electric field reaches a preset second processing time, the Y-axis alternating electric field is turned off to obtain a target mask, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the X-axis line edge protection sheath layer blocks the plasma from etching the X-axis line edge to be processed.

[0096] It should be noted that the density measurement value refers to the measured number or concentration of charged particles in the plasma, which is used to evaluate the state and characteristics of the plasma. The sheath generation model refers to a mathematical model or algorithm for calculating and generating a protective sheath, and determines the appropriate electric field power based on the density measurement value and other parameters; the target electric field power refers to the electric field power calculated by the sheath generation model, which is used to generate the protective sheath to control the behavior and distribution of the plasma. The direction of the line edge to be processed refers to the direction of the line edge on the mask that needs to be plasma etched, usually corresponding to the edge of the pattern on the mask. The X-axis direction refers to the horizontal direction in a two-dimensional coordinate system, which is used to define one dimension of the line edge to be processed. The Y-axis direction refers to the vertical direction in a two-dimensional coordinate system, which is used to define another dimension of the line edge to be processed.

[0097] In addition, it should be noted that the X-axis alternating electric field is an electric field that changes alternately in the horizontal direction, and is used to control the behavior and distribution of plasma in the X-axis direction. The Y-axis line edge protection sheath is a protective layer formed in the Y-axis direction, which is used to block the plasma from etching the line edge in the Y-axis direction and protect the line edge in the Y-axis direction from being affected. The first processing time refers to the pre-set time length of the X-axis alternating electric field, which is used to control the duration of plasma etching. The second mask to be processed refers to the mask after the X-axis plasma etching treatment, and its line edge roughness in the X-axis direction has been corrected, but it still needs to be processed in other directions. The Y-axis alternating electric field refers to an electric field that changes alternately in the vertical direction, and is used to control the behavior and distribution of plasma in the Y-axis direction. The X-axis line edge protection sheath refers to a protective layer formed in the X-axis direction, which is used to block the plasma from etching the line edge in the X-axis direction and protect the line edge in the X-axis direction from being affected. The second processing time refers to the pre-set time length of the Y-axis alternating electric field, which is used to control the duration of plasma etching. The target mask refers to a mask that reaches the expected line edge roughness standard after being processed by plasma etching in the X-axis and Y-axis directions, and can be used in subsequent semiconductor manufacturing processes.

[0098] Exemplarily, first, determine the line edge direction on the mask that needs to be plasma-etched, and decompose it into the X-axis and Y-axis directions in the two-dimensional coordinate system. Then, activate the X-axis alternating electric field that changes alternately in the horizontal direction, which can control the behavior and distribution of the plasma in the X-axis direction. Use the X-axis alternating electric field to control the plasma, and perform plasma etching on the line edge that needs to be processed in the X-axis direction on the mask to improve its line edge roughness. When the X-axis alternating electric field is turned on for a preset first processing time, turn off the X-axis alternating electric field and stop the plasma etching process in the X-axis direction. After processing in the X-axis direction, a new mask state is obtained, that is, the second mask to be processed, at which time the line edge roughness in the X-axis direction is corrected, but processing in other directions is still required. Next, activate the Y-axis alternating electric field that changes alternately in the vertical direction, which can control the behavior and distribution of the plasma in the Y-axis direction. The plasma is controlled by the Y-axis alternating electric field to perform plasma etching on the line edges on the mask that need to be processed in the Y-axis direction to improve their line edge roughness. When the Y-axis alternating electric field is turned on for a preset second processing time, the Y-axis alternating electric field is turned off to stop the plasma etching process in the Y-axis direction. After processing in the X-axis and Y-axis directions, the final target mask is obtained. At this time, the line edge roughness of the mask reaches the expected standard and can be used in subsequent semiconductor manufacturing processes.

[0099] In this embodiment, the horizontal alternating electric field is activated to control plasma to perform plasma etching on the line edge of the mask, thereby solving the problem of roughness of the line edge of the mask and ensuring its performance and reliability in integrated circuit manufacturing.

[0100] The above are only two feasible implementations of step S30 provided in this embodiment, and this embodiment does not specifically limit the specific implementation of step S30.

[0101] The present embodiment provides a method for correcting mask line edges, which utilizes an alternating electric field in a horizontal direction to perform plasma etching on a first mask to be processed. When the roughness of the first line edge does not meet a preset line edge roughness range, the alternating electric field in the horizontal direction is activated to perform plasma etching on all line edges of the first mask to be processed. Therefore, by judging the roughness of the first line edge through the preset line edge roughness range, it can be determined whether it is necessary to improve the roughness of the first line edge, and then plasma etching correction is performed on all line edges of the mask to be processed that need to be improved to obtain a corrected mask, thereby achieving line edge correction of a mask with rough line edges of a large area of ​​graphics, and ultimately achieving a significant reduction in production costs.

[0102] In a feasible implementation manner, before step S10, the mask line edge correction method further includes:

[0103] Activating the surrounding coil to obtain an activation magnetic field, an induced electric field and plasma, wherein the plasma is obtained by accelerating electrons by the activation magnetic field and the induced electric field generated by the activated surrounding coil;

[0104] According to the preset pattern to be etched, the plasma is controlled by the activation magnetic field and the induced electric field to perform plasma etching in a vertical direction on the preset initial mask to obtain a first mask to be processed.

[0105] It should be noted that the surrounding coil refers to a conductive coil arranged around a certain area. When an electric current passes through these coils, a magnetic field is generated. This magnetic field can be used to control or influence the behavior of plasma. The activation magnetic field refers to the magnetic field generated by the activated surrounding coil, which forms a certain magnetic induction intensity in space and can be used to guide and control the movement and distribution of plasma. The induced electric field refers to the electric field induced by the changing magnetic field. The changing magnetic field will induce an electric field in the surrounding space, which can further accelerate and control the electrons and ions in the plasma. The plasma is a material state obtained by accelerating electrons by the activation magnetic field and the induced electric field generated by the activated surrounding coil. It is a mixture of positive ions and free electrons. It has good conductivity and reactivity and is commonly used in etching and deposition processes in semiconductor manufacturing. The first mask to be processed refers to the state of the mask after vertical plasma etching.

[0106] It can be understood that according to the preset pattern to be etched, the plasma is controlled by activating the magnetic field and inducing the electric field to perform vertical plasma etching on the preset initial mask, and the direction and intensity of the magnetic field and the electric field are used to guide the particles (mainly high-energy electrons) in the plasma to vertically impact the mask surface, thereby achieving selective removal of the mask material. This etching process can be carried out accurately according to the preset pattern, thereby obtaining the desired first mask to be processed.

[0107] It can be understood that this series of processes is to generate and guide plasma by controlling the magnetic field and electric field, so as to achieve precise etching of the mask material to achieve the desired graphics and structure.

[0108] In a feasible implementation manner, after step S30, the mask line edge correction method further includes:

[0109] Acquiring a second line edge roughness of the target mask;

[0110] Determining whether the second line edge roughness meets a preset line edge roughness range;

[0111] If the second line edge roughness does not meet the preset line edge roughness range, plasma etching is performed on all line edges of the target mask through a preset horizontal alternating electric field, and the process returns to the step of obtaining the second line edge roughness of the target mask until the second line edge roughness of the target mask meets the preset conditions, thereby obtaining the target mask that meets the preset conditions.

[0112] It should be noted that the second line edge roughness refers to the current roughness state of the line edge of the second mask to be processed after a certain treatment. The line edge roughness range is a preset range determined according to process requirements and product quality standards.

[0113] It can be understood that obtaining the second line edge roughness of the target mask refers to measuring or evaluating the surface roughness of each line edge on the target mask. Judging whether the second line edge roughness meets the preset line edge roughness range refers to comparing the line edge roughness actually measured with the preset standard or range. If the second line edge roughness does not meet the preset line edge roughness range, it means that the line edge roughness of the mask does not meet the expected standard. In this case, it is necessary to perform plasma etching on all the line edges of the target mask through a preset horizontal alternating electric field. This process is to further improve the quality of the line edge to meet the preset standard. Returning to the step of obtaining the second line edge roughness of the target mask means measuring or evaluating the line edge roughness of the mask again after the plasma etching treatment, and repeating this process until the line edge roughness meets the preset conditions. In this way, it can be ensured that the target mask finally obtained meets the process requirements and product quality standards. By repeatedly measuring and processing the line edge roughness of the mask to ensure that it meets the expected standard, the smooth progress of the semiconductor manufacturing process and the quality of the product are guaranteed.

[0114] Exemplarily, in order to help understand the implementation process of the mask line edge correction method obtained by combining this embodiment with the above embodiments, a brief process of the mask line edge correction method is provided, specifically:

[0115] like Figure 2 As shown, in the ICP mode, the upper electrode is connected to the source RF (source radio frequency), and a magnetic field is generated by surrounding the coil 4. The magnetic field generates an induced electric field, and the electrons are accelerated under the induced electric field to generate plasma. 1 is a quartz substrate, 2 is a chromium layer, and plasma 5 reaches the chromium layer 2 under the control of the electric field / magnetic field to react with it. Among them, ICP is an inductively coupled plasma (inductively coupled plasma), Source RF is mainly used to generate and maintain plasma, and Bias RF is mainly used to control the directionality of plasma and the energy of ions;

[0116] The lower electrode structure of the mask etching machine is as follows Figure 3 As shown, 6 is the electrode body, 7 is the mask carrier of the concave structure; at a certain height from the bottom of 7 (generally 2.5 inches of mask thickness), a circle of 3 alternating power sources is added around, the electrode height of the alternating power source 3 is 1000nm, slightly higher than the height of the chrome layer and the photoresist 2, the frequency is 13.56MHz, and the power of the horizontal electric field is much smaller than that of the ICP mode, and is in the adjustable range of 5-20W;

[0117] Principle Figure 4As shown, for the lines in the X-axis direction with poor edge roughness such as ripples, the ICP mode is turned off and the power is adjusted to the minimum. While generating glow discharge, the etching rate is maintained at a low level, and then horizontal etching is performed using the horizontal electric field 3: the alternating electric field in the X-axis direction is turned on, and the plasma collides / reacts with the protruding part under the action of the electric field, so that the rough lines in the direction parallel to the electric field become smooth; for the lines in the Y-axis direction, the alternating electric field in the Y-axis direction is turned on, and the positive / negative ions flush the edges of the lines under the action of the electric field.

[0118] like Figure 5 As shown, after being exposed and developed, the mask enters the dry etching machine and is nested on the carrier of the lower electrode 6; then, the ICP mode is turned on, and normal etching is performed to transfer the pattern on the photoresist 11 to the chromium layer 2; the ICP mode is turned off, and the horizontal alternating electric field 3 is turned on to correct the roughness of the line edge. At this time, the electric field in the X-axis direction or the Y-axis direction is turned on alternately; finally, the alternating electric field is turned off, the mask is removed, and the film is stripped and cleaned.

[0119] like Figure 6 As shown in the figure, when the X-axis or Y-axis direction of the horizontal electric field 3 is turned on, the microscopic reaction of the line seam perpendicular to the electric field direction is as follows: the heavier ions often have no time to return in the electric field with a rapidly changing direction, and stay at both ends of the line to form a sheath, which can partially block the bombardment of the line perpendicular to the electric field. The plasma moves back and forth at the line seam horizontal to the electric field, and collides and reacts to the protrusion.

[0120] It should be noted that the above examples are only used to understand the present application and do not constitute a limitation on the mask line edge correction method of the present application. More simple transformations based on this technical concept are all within the protection scope of the present application.

[0121] This application also provides a mask line edge correction device, please refer to Figure 7 , the mask line edge correction device comprises:

[0122] A receiving module 10 is used to receive a first line edge roughness of a first mask to be processed;

[0123] A judging module 20, configured to judge whether the first line edge roughness satisfies a preset line edge roughness range;

[0124] The execution module 30 is used to activate the horizontal alternating electric field if the first line edge roughness does not meet the line edge roughness range, so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction.

[0125] And / or, the execution module 30 includes:

[0126] A first acquisition module, used for acquiring the direction of the edge of the line to be processed of the first mask to be processed;

[0127] The first activation module is used to activate the alternating electric field corresponding to the direction of the line edge to be processed, so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain a target mask.

[0128] And / or, the first activation module includes:

[0129] A second acquisition module is used to acquire the X-axis direction and the Y-axis direction of the line edge direction to be processed;

[0130] A second activation module is used to activate the X-axis alternating electric field corresponding to the X-axis direction, so that the X-axis alternating electric field controls the plasma to perform plasma etching along the X-axis to-be-processed line edge of the first to-be-processed mask;

[0131] A first closing module is used to close the X-axis alternating electric field when the on time of the X-axis alternating electric field reaches a preset first processing time to obtain a second mask to be processed;

[0132] A third activation module is used to activate the Y-axis alternating electric field corresponding to the Y-axis direction, so that the Y-axis alternating electric field controls the plasma to perform plasma etching along the Y-axis to-be-processed line edge of the first to-be-processed mask;

[0133] The second closing module is used to close the Y-axis alternating electric field when the on time of the Y-axis alternating electric field reaches a preset second processing time to obtain a target mask.

[0134] And / or, the first activation module includes:

[0135] A third acquisition module is used to acquire the graphic data and process parameters of the target mask;

[0136] A first measurement module, configured to perform virtual measurement of the plasma density in the etching chamber based on the graphic data and the process parameters to determine a density measurement value;

[0137] A first calculation module, configured to calculate a target electric field power required for a preset protective sheath thickness according to the density measurement value and through a preset sheath generation model;

[0138] A fourth acquisition module, used to acquire the X-axis direction and the Y-axis direction of the line edge direction to be processed;

[0139] The fourth activation module is used to activate the X-axis alternating electric field according to the target electric field power to generate a Y-axis line edge protection sheath layer, and when the activation time of the X-axis alternating electric field reaches a preset first processing time, turn off the X-axis alternating electric field to obtain a second mask to be processed, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the Y-axis line edge protection sheath layer blocks the plasma from etching the Y-axis line edge to be processed;

[0140] The fifth activation module is used to activate the Y-axis alternating electric field according to the target electric field power to generate an X-axis line edge protection sheath layer, and when the on time of the Y-axis alternating electric field reaches a preset second processing time, turn off the Y-axis alternating electric field to obtain a target mask, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the X-axis line edge protection sheath layer blocks the plasma from etching the X-axis line edge to be processed.

[0141] And / or, the mask line edge correction device comprises:

[0142] a sixth activation module, used to activate the surrounding coil to obtain an activation magnetic field, an induced electric field and plasma, wherein the plasma is obtained by accelerating electrons by the activation magnetic field and the induced electric field generated by the activated surrounding coil;

[0143] The first control module is used to control the plasma to perform vertical plasma etching on a preset initial mask through the activation magnetic field and the induced electric field according to a preset pattern to be etched, so as to obtain a first mask to be processed.

[0144] And / or, the mask line edge correction device comprises:

[0145] A fifth acquisition module, used for acquiring a second line edge roughness of the target mask;

[0146] A first judging module, configured to judge whether the second line edge roughness meets a preset line edge roughness range;

[0147] The first inspection module is used to perform plasma etching on all line edges of the target mask plate through a preset horizontal alternating electric field if the second line edge roughness does not meet the preset line edge roughness range, and return to the step of obtaining the second line edge roughness of the target mask plate until the second line edge roughness of the target mask plate meets the preset conditions, thereby obtaining the target mask plate that meets the preset conditions.

[0148] The mask line edge correction device provided by the present application adopts the mask line edge correction method in the above embodiment, which can solve the technical problem of uneven line edges of large-area patterns of the mask. Compared with the prior art, the beneficial effects of the mask line edge correction device provided by the present application are the same as the beneficial effects of the mask line edge correction method provided by the above embodiment, and other technical features in the mask line edge correction device are the same as the features disclosed in the above embodiment method, which will not be repeated here.

[0149] The present application provides a mask line edge correction device, which includes: at least one processor; and a memory that is communicatively connected to the at least one processor; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the mask line edge correction method in the above-mentioned embodiment 1.

[0150] Reference below Figure 8 , which shows a schematic diagram of the structure of a mask line edge correction device suitable for implementing the embodiment of the present application. The mask line edge correction device in the embodiment of the present application may include but is not limited to mobile terminals such as mobile phones, tablet computers, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PMPs (Portable Media Players), vehicle terminals (such as vehicle navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Figure 8 The mask line edge correction device shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0151] like Figure 8As shown, the mask line edge correction device may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM: Read Only Memory) 1002 or a program loaded from a storage device 1003 to a random access memory (RAM: Random Access Memory) 1004. Various programs and data required for the operation of the mask line edge correction device are also stored in the RAM 1004. The processing device 1001, the ROM 1002, and the RAM 1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Typically, the following systems may be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touchpad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD), a speaker, a vibrator, etc.; a storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 may allow the mask line edge correction device to communicate with other devices wirelessly or by wire to exchange data. Although the mask line edge correction device having various systems is shown in the figure, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems may be implemented or have instead.

[0152] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.

[0153] The mask line edge correction device provided by the present application adopts the mask line edge correction method in the above embodiment, which can solve the technical problem of uneven line edges of large-area patterns of the mask. Compared with the prior art, the beneficial effects of the mask line edge correction device provided by the present application are the same as the beneficial effects of the mask line edge correction method provided by the above embodiment, and the other technical features of the mask line edge correction device are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.

[0154] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0155] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0156] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer programs) stored thereon, and the computer-readable program instructions are used to execute the mask line edge correction method in the above-mentioned embodiment.

[0157] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency), etc., or any suitable combination of the above.

[0158] The computer-readable storage medium may be included in the mask line edge correction device; or may exist independently without being assembled into the mask line edge correction device.

[0159] The computer-readable storage medium carries one or more programs. When the one or more programs are executed by the mask line edge correction device, the mask line edge correction device: receives a first line edge roughness of a first mask to be processed; determines whether the first line edge roughness meets a preset line edge roughness range; if the first line edge roughness does not meet the line edge roughness range, activates a horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed, thereby obtaining a target mask with completed line edge correction.

[0160] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0161] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present application. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a sequence different from that marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0162] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.

[0163] The readable storage medium provided in the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned mask line edge correction method, and can solve the technical problem of uneven line edges of large-area graphics of the mask. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided in the present application are the same as the beneficial effects of the mask line edge correction method provided in the above-mentioned embodiment, and will not be repeated here.

[0164] The present application also provides a computer program product, including a computer program, which implements the steps of the above-mentioned mask line edge correction method when executed by a processor.

[0165] The computer program product provided by the present application can solve the technical problem of uneven edges of large-area patterns on the mask. Compared with the prior art, the beneficial effects of the computer program product provided by the present application are the same as those of the mask edge correction method provided by the above embodiment, and will not be elaborated here.

[0166] The above descriptions are only some embodiments of the present application, and are not intended to limit the patent scope of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect applications in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A mask line edge correction method, characterized in that: The method includes: receiving a first line edge roughness of a first mask to be processed; Determining whether the first line edge roughness satisfies a preset line edge roughness range; If the first line edge roughness does not meet the line edge roughness range, the horizontal alternating electric field is activated so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction.

2. The method according to claim 1, characterized in that The step of activating the horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction includes: Obtaining the direction of the edge of the line to be processed of the first mask to be processed; The alternating electric field corresponding to the direction of the line edge to be processed is activated so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain a target mask.

3. The method according to claim 2, characterized in that The step of activating the alternating electric field corresponding to the direction of the line edge to be processed so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain the target mask includes: Obtaining the X-axis direction and the Y-axis direction of the line edge direction to be processed; activating the X-axis alternating electric field corresponding to the X-axis direction, so that the X-axis alternating electric field controls the plasma to perform plasma etching along the X-axis to-be-processed line edge of the first to-be-processed mask; When the on time of the X-axis alternating electric field reaches a preset first processing time, the X-axis alternating electric field is turned off to obtain a second mask to be processed; activating the Y-axis alternating electric field corresponding to the Y-axis direction, so that the Y-axis alternating electric field controls the plasma to perform plasma etching along the Y-axis to-be-processed line edge of the first to-be-processed mask; When the on time of the Y-axis alternating electric field reaches a preset second processing time, the Y-axis alternating electric field is turned off to obtain a target mask.

4. The method according to claim 2, characterized in that The step of activating the alternating electric field corresponding to the direction of the line edge to be processed so that the alternating electric field controls the plasma to perform plasma etching along all the line edges to be processed of the first mask to be processed to obtain the target mask includes: Obtaining the graphic data and process parameters of the target mask; Based on the graphic data and the process parameters, virtually measure the plasma density in the etching chamber to determine a density measurement value; According to the density measurement value, a target electric field power required for a preset protective sheath thickness is calculated through a preset sheath generation model; Obtaining the X-axis direction and the Y-axis direction of the line edge direction to be processed; According to the target electric field power, the X-axis alternating electric field is activated to generate a Y-axis line edge protection sheath layer, and when the activation time of the X-axis alternating electric field reaches a preset first processing time, the X-axis alternating electric field is turned off to obtain a second mask to be processed, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the Y-axis line edge protection sheath layer blocks the plasma from etching the Y-axis line edge to be processed; According to the target electric field power, the Y-axis alternating electric field is activated to generate an X-axis line edge protection sheath layer, and when the on time of the Y-axis alternating electric field reaches a preset second processing time, the Y-axis alternating electric field is turned off to obtain a target mask, wherein when the plasma performs plasma etching along the X-axis line edge to be processed, the X-axis line edge protection sheath layer blocks the plasma from etching the X-axis line edge to be processed.

5. The method according to claim 1, characterized in that Before the step of receiving the first line edge roughness of the first mask to be processed, the step further includes: Activating the surrounding coil to obtain an activation magnetic field, an induced electric field and plasma, wherein the plasma is obtained by accelerating electrons by the activation magnetic field and the induced electric field generated by the activated surrounding coil; According to the preset pattern to be etched, the plasma is controlled by the activation magnetic field and the induced electric field to perform plasma etching in a vertical direction on the preset initial mask to obtain a first mask to be processed.

6. The method according to claim 1, characterized in that After the step of activating the horizontal alternating electric field so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction, the step further includes: Acquiring a second line edge roughness of the target mask; Determining whether the second line edge roughness meets a preset line edge roughness range; If the second line edge roughness does not meet the preset line edge roughness range, plasma etching is performed on all line edges of the target mask through a preset horizontal alternating electric field, and the process returns to the step of obtaining the second line edge roughness of the target mask until the second line edge roughness of the target mask meets the preset conditions, thereby obtaining the target mask that meets the preset conditions.

7. A mask line edge correction device, characterized in that: The device comprises: A receiving module, used for receiving a first line edge roughness of a first mask to be processed; A judging module, used for judging whether the first line edge roughness satisfies a preset line edge roughness range; The execution module is used to activate the horizontal alternating electric field if the first line edge roughness does not meet the line edge roughness range, so that the horizontal alternating electric field controls the pre-generated plasma to perform plasma etching on all line edges of the first mask to be processed to obtain a target mask with completed line edge correction.

8. A mask etching device, characterized in that: The device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the mask line edge correction method according to any one of claims 1 to 6.

9. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the mask line edge correction method according to any one of claims 1 to 6 are implemented.

10. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the steps of the mask line edge correction method according to any one of claims 1 to 6 are implemented.

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