Surface plasmon nano laser and preparation method thereof

Abstract

The invention provides a surface plasmon nano laser and a preparation method thereof. The preparation method comprises the following steps: manufacturing and forming a metal layer and a dielectric layer on a substrate, manufacturing and forming a first alignment mark on the dielectric layer, manufacturing and forming a gain dielectric array and a second alignment mark on a glass substrate, aligning and attaching the first alignment mark and the second alignment mark, and attaching the gain dielectric array and the dielectric layer. And combining to form the surface plasmon nano laser. According to the preparation method, accurate positioning of the position of the laser can be realized, flexible array modulation of different gain medium shapes and different array distribution can be realized, the consistency of the property of the laser can be effectively improved, more laser array functions are easy to expand, and benefit from the high precision of the micro-nano processing technology, the production efficiency is improved, and the production cost is reduced. The laser array prepared by the method has smaller unit laser size, more accurate laser spacing and higher optical integration.

Description

Technical Field

[0001] The present invention belongs to the technical field of transistors, and in particular, relates to a surface plasmon nano-laser and a preparation method thereof. Background Art

[0002] Surface plasmon nanolasers realize stimulated radiation amplification of surface plasmons, and achieve mode size and device size that break through the optical diffraction limit by coupling energy into free electron oscillations. In addition, surface plasmon nanolasers have their own metal medium, which can effectively reduce the operating temperature of the device, and have the advantage of simple structure and no need to design scattering components separately. Therefore, surface plasmon nanolasers are a simple and miniaturized coherent light source, which has important application value in photonic integrated circuits and on-chip optical interconnects.

[0003] Surface plasmon nanolasers can significantly improve photon integration, information capacity and functional diversity, and are an inevitable trend in their development. At present, surface plasmon nanolasers are realized by placing gain media or nanowires on metal gratings, and arraying surface plasmon nanolasers is achieved by modulating the substrate. However, there are shortcomings. The position of the gain medium transferred to the substrate is random, and there is a problem of poor laser positioning repeatability. Summary of the invention

[0004] The technical problem solved by the present invention is: how to provide a method for preparing a surface plasmon nano-laser so that the positioning of the laser is accurate and controllable.

[0005] The present application provides a method for preparing a surface plasmon nanolaser, the preparation method comprising:

[0006] Forming a metal layer and a dielectric layer on a substrate;

[0007] Forming a first alignment mark on the dielectric layer;

[0008] Forming a gain medium array and a second alignment mark on a glass substrate;

[0009] The first alignment mark and the second alignment mark are aligned and bonded, and the gain medium array and the medium layer are bonded to form a surface plasmon nano-laser.

[0010] Optionally, the method for forming a first alignment mark on the dielectric layer includes:

[0011] coating a photoresist on the dielectric layer;

[0012] The photoresist is exposed and developed, and a portion of the photoresist is retained as a first alignment mark.

[0013] Optionally, the method for forming a gain medium array and a second alignment mark on a glass substrate comprises:

[0014] Forming a gain medium layer on the glass substrate;

[0015] Coating a photoresist on the gain medium layer, exposing and developing the photoresist, and forming a gain medium array pattern and a second alignment mark pattern on the remaining photoresist;

[0016] The gain medium array pattern and the second alignment mark pattern are used as masks, and the gain medium layer is etched to remove the remaining photoresist, thereby forming a gain medium array and a second alignment mark.

[0017] Optionally, the first alignment mark and the second alignment mark are matched in a concave-convex manner.

[0018] Optionally, the shape of the gain medium unit of the gain medium array is one or more of a bar, a rectangle, a regular polygon, and a circle.

[0019] Optionally, the array arrangement of the gain medium array is one of an oblique arrangement, a rectangular arrangement, a square arrangement, and a hexagonal arrangement.

[0020] Optionally, the method for forming a metal layer and a dielectric layer on a substrate includes:

[0021] Forming the metal layer on the substrate;

[0022] A dielectric layer is formed on the metal layer.

[0023] The present application also provides a surface plasmon nanolaser, which is prepared by the above-mentioned preparation method.

[0024] The present application provides a method for preparing a surface plasmon nanolaser, which has the following technical effects:

[0025] This preparation method can achieve precise positioning of the laser position, and can achieve flexible array modulation with different gain medium shapes and different array distributions, which can effectively improve the consistency of laser properties and easily expand more laser array functions. Thanks to the high precision of micro-nano processing technology, the laser array prepared by this method has a smaller unit laser size, more precise laser spacing, and higher optical integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic flow chart of a method for preparing a surface plasmon nanolaser according to the first embodiment of the present invention;

[0027] Figure 2 It is a schematic diagram of a method for preparing a surface plasmon nanolaser according to Embodiment 1 of the present invention;

[0028] Figure 3 is a distribution diagram of the strip-shaped gain medium array in the first embodiment of the present invention;

[0029] Figure 4 is a distribution diagram of a square gain medium array in Embodiment 1 of the present invention;

[0030] Figure 5 is a distribution diagram of the circular gain medium array in the first embodiment of the present invention;

[0031] Figure 6 This is a distribution diagram of the combined gain medium array in the first embodiment of the present invention.

[0032] The corresponding relationship between the reference numerals and the component names is as follows:

[0033] 1-substrate, 2-metal layer, 3-medium layer, 4a-first alignment mark, 4b-second alignment mark, 5-gain medium layer, 6-glass substrate, 7-photoresist, 8-gain medium array, 9-surface plasmon nanolaser. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0035] Before describing each embodiment of the present application in detail, the technical concept of the present application is briefly described first: the current surface plasmon nanolaser has problems such as poor laser positioning repeatability, poor consistency and is not conducive to high-density integration. To this end, the present application provides a surface plasmon nanolaser and a preparation method thereof, respectively forming a metal / dielectric film layer and an alignment mark on a substrate, and forming a gain medium array and an alignment mark on a glass substrate, and then combining the substrate and the glass substrate, and ensuring the precise positioning of the laser position through the two-part alignment mark. The specific principles of the surface plasmon nanolaser and the preparation method thereof of the present application are described below in conjunction with more embodiments.

[0036] Specifically, if Figure 1 and Figure 2 As shown, the method for preparing the surface plasmon nanolaser of the first embodiment includes the following steps:

[0037] Step S10, forming a metal layer 2 and a dielectric layer 3 on a substrate 1;

[0038] Step S20, forming a first alignment mark 4a on the dielectric layer;

[0039] Step S30, forming a gain medium array 8 and a second alignment mark 4b on the glass substrate 6;

[0040] Step S40 , aligning and laminating the first alignment mark 4 a and the second alignment mark 4 b , laminating the gain medium array and the medium layer 3 , and combining them to form a surface plasmon nanolaser 9 .

[0041] Exemplarily, the method for forming the metal layer 2 and the dielectric layer 3 on the substrate 1 includes: forming the metal layer 2 on the substrate 1; forming the dielectric layer 3 on the metal layer 2. The substrate 1 is made of one of silicon wafer, quartz, glass, and mica. The metal layer 2 is made of one of gold, silver, copper, and aluminum, and the manufacturing method includes sputtering, electron beam evaporation, thermal evaporation, etc. The dielectric layer 3 is made of one of silicon dioxide, aluminum oxide, magnesium fluoride, and lithium fluoride, and the thickness of the dielectric layer 3 is 5nm-20nm.

[0042] Furthermore, the method for forming the first alignment mark 4a on the dielectric layer 3 includes: coating a photoresist on the dielectric layer 3; exposing and developing the photoresist, and retaining a portion of the photoresist as the first alignment mark 4a.

[0043] Exemplarily, the method for forming a gain medium array and a second alignment mark on a glass substrate includes: forming a gain medium layer 5 on a glass substrate 6; coating a photoresist 7 on the gain medium layer 5, exposing and developing the photoresist, and the remaining photoresist forms a gain medium array pattern and a second alignment mark pattern; using the gain medium array pattern and the second alignment mark pattern as a mask, etching the gain medium layer 5 and removing the remaining photoresist to form a gain medium array 8 and a second alignment mark 4b. Wherein, the gain medium layer 5 is made of an inorganic semiconductor or an organic-inorganic hybrid semiconductor material, and the film thickness of the gain medium layer 5 is 50nm-200nm. The exposed gain medium film layer is removed by an etching process until the glass substrate is exposed; the etching process of removing the photoresist of the array pattern layer to form the gain medium array 8 and the second alignment mark 4b can be completed by one of reactive ion etching, ion beam etching, and inductively coupled plasma etching.

[0044] In one or more embodiments, the shape of the gain medium unit of the gain medium array 8 is one or more of a strip, a rectangle, a regular polygon, and a circle. The array arrangement of the gain medium array 8 is one of a rhombus arrangement, a rectangular arrangement, a square arrangement, and a hexagonal arrangement. Figure 3 As shown, the strip-shaped gain medium units are arranged in a rectangular array, such as Figure 4 As shown, the square gain medium units are arranged in an oblique array, such as Figure 5 As shown, the circular gain medium units are arranged in a hexagonal array, such as Figure 6 As shown in the figure, four gain medium units of strip, square, circle and regular hexagon form a unit and are arranged in a square array. This can achieve flexible array modulation with different gain medium shapes and different array distributions, effectively improve the consistency of laser properties, and easily expand more laser array functions.

[0045] Exemplarily, the first alignment mark 4a and the second alignment mark 4b are matched in a concave-convex manner. For example, the first alignment mark 4a is a convex structure, and the second alignment mark 4b is a concave structure. Through the two-part alignment mark, the position of the laser can be accurately positioned, and the positioning can be controlled. At the same time, thanks to the high precision of micro-nano processing technology, the laser array prepared by this method has a smaller unit laser size, more accurate laser spacing, and higher optical integration.

[0046] In one or more embodiments, this embodiment also provides a surface plasmon nanolaser prepared by the above preparation method.

[0047] The specific implementation methods of the present invention are described in detail above. Although some embodiments have been shown and described, those skilled in the art should understand that these embodiments can be modified and improved without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents. These modifications and improvements should also be within the scope of protection of the present invention.

Claims

1. A method for preparing a surface plasmon nanolaser, characterized in that: The preparation method comprises: Forming a metal layer and a dielectric layer on a substrate; Forming a first alignment mark on the dielectric layer; Forming a gain medium array and a second alignment mark on a glass substrate; The first alignment mark and the second alignment mark are aligned and bonded, and the gain medium array and the medium layer are bonded to form a surface plasmon nano-laser.

2. The method for preparing a surface plasmon nanolaser according to claim 1, characterized in that: The method for forming a first alignment mark on the dielectric layer comprises: coating a photoresist on the dielectric layer; The photoresist is exposed and developed, and a portion of the photoresist is retained as a first alignment mark.

3. The method for preparing a surface plasmon nanolaser according to claim 1, characterized in that: The method for forming a gain medium array and a second alignment mark on a glass substrate comprises: Forming a gain medium layer on the glass substrate; Coating a photoresist on the gain medium layer, exposing and developing the photoresist, and forming a gain medium array pattern and a second alignment mark pattern on the remaining photoresist; The gain medium array pattern and the second alignment mark pattern are used as masks, and the gain medium layer is etched to remove the remaining photoresist, thereby forming a gain medium array and a second alignment mark.

4. The method for preparing a surface plasmon nanolaser according to claim 1, characterized in that: The first alignment mark and the second alignment mark are matched with each other in a concave-convex manner.

5. The method for preparing a surface plasmon nanolaser according to claim 1, characterized in that: The shape of the gain medium unit of the gain medium array is one or more of a strip, a rectangle, a regular polygon and a circle.

6. The method for preparing a surface plasmon nanolaser according to claim 1, characterized in that: The array arrangement of the gain medium array is one of an oblique arrangement, a rectangular arrangement, a square arrangement, and a hexagonal arrangement.

7. The method for preparing a surface plasmon nanolaser according to claim 1, characterized in that: The method for forming a metal layer and a dielectric layer on a substrate comprises: Forming the metal layer on the substrate; A dielectric layer is formed on the metal layer.

8. A surface plasmon nanolaser, characterized in that: The surface plasmon nanolaser is prepared by the preparation method according to any one of claims 1 to 7.

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