Semiconductor device

Abstract

A semiconductor device according to one aspect of the present disclosure includes: a semiconductor package in which a heat sink, a semiconductor chip provided on one surface of the heat sink, and an electrode terminal electrically connected to the semiconductor chip are resin-sealed, the semiconductor package having a bottom surface in which the other surface of the heat sink is exposed from a sealing resin, the electrode terminals protrude from at least one of the side surfaces and the upper surface. An insulating sheet disposed on the bottom surface of the semiconductor package; and a heat absorber having a recess for accommodating the bottom surface of the semiconductor package, the depth of the recess being deeper than the thickness of the insulating sheet, the bottom surface of the recess and the bottom surface of the semiconductor package being joined via the insulating sheet, and the semiconductor package being supported in the recess. As a result, it is possible to provide a semiconductor device in which a decrease in heat dissipation performance is suppressed while preventing the semiconductor package, the insulating sheet, and the bonding portion of the heat absorber from shifting and peeling.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. Background Art

[0002] Semiconductor devices such as those used for power conversion are used for power control of a wide range of equipment, from industrial equipment to home appliances, information terminals, automobiles, and trains. More specifically, an inverter that converts DC power into AC power can be cited. In particular, in semiconductor devices that operate at large currents and high voltages, it is essential to ensure high insulation and efficiently dissipate the heat generated by the operation to the outside. In addition, depending on the device, it may be used in harsh environments such as high temperature, low temperature, low air pressure, and vibration. Therefore, in order to maintain stable reliability even in harsh environments, the bonding stability of the components is required. For example, in Patent Document 1, a portion of the heat sink is buried in the semiconductor package to prevent displacement and peeling between the semiconductor package, the insulating sheet, and the heat sink.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2013-115167 Summary of the invention

[0006] However, in the conventional technology disclosed in Patent Document 1, since the heat sink and the insulating sheet are covered with a semiconductor package, the contact area between the heat sink and the cooling medium is limited, resulting in a problem of reduced heat dissipation.

[0007] The present disclosure has been made to solve the above-mentioned problems, and an object of the present disclosure is to prevent displacement and separation between the semiconductor package, the insulating sheet, and the heat sink while suppressing a decrease in heat dissipation by covering the semiconductor package and the insulating sheet with a heat sink.

[0008] A semiconductor device according to one embodiment of the present invention comprises: a semiconductor package, which resin-seals a heat spreader, a semiconductor chip arranged on one surface of the heat spreader, and an electrode terminal electrically connected to the semiconductor chip, and has a bottom surface with the other surface of the heat spreader exposed from the sealing resin, and the electrode terminal protrudes from at least one of the side surface and the upper surface; an insulating sheet arranged on the bottom surface of the semiconductor package; and a heat absorber, which has a recessed portion for accommodating the bottom surface of the semiconductor package, the depth of the recessed portion is deeper than the thickness of the insulating sheet, the bottom surface of the recessed portion and the bottom surface of the semiconductor package are joined via the insulating sheet, and the semiconductor package is supported in the recessed portion.

[0009] According to the present disclosure, by covering the semiconductor package and the insulating sheet with the heat sink, it is possible to prevent the semiconductor package, the insulating sheet, and the heat sink from being displaced or peeled off at the joints, while suppressing a decrease in heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 1 is a plan view of the semiconductor device 100 according to the first embodiment.

[0011] Figure 2 AA is a cross-sectional view of the semiconductor device 100 according to the first embodiment in which a wire bonding structure is applied.

[0012] Figure 3 It is a cross-sectional view taken along line AA of the semiconductor device 100 according to the first embodiment in the case where a direct wire bonding structure is applied.

[0013] Figure 4 This is a plan view of an example in which a plurality of semiconductor packages 110 are mounted on one heat sink 8 in the semiconductor device 100 according to the first embodiment.

[0014] Figure 5 It is a top view of the semiconductor device 200 according to the second embodiment.

[0015] Figure 6 It is a BB cross-sectional view of the semiconductor device 200 according to the second embodiment.

[0016] Figure 7 It is a CC cross-sectional view of the semiconductor device 200 according to the second embodiment.

[0017] Figure 8 It is a cross-sectional view taken along the line AA of the semiconductor device 300 according to the third embodiment.

[0018] Fig. 9 It is a bottom view of a semiconductor package 310 of a semiconductor device 300 according to the third embodiment.

[0019] Fig.10 It is a bottom view of a semiconductor package 310 of a semiconductor device 300 according to a modification of the third embodiment.

[0020] Fig.11 It is a top view of a semiconductor device 400 according to the fourth embodiment.

[0021] Fig.12 It is a DD cross-sectional view of the semiconductor device 400 according to the fourth embodiment.

[0022] Fig.13 1 is a top view of a semiconductor device 400 according to a modification of the fourth embodiment.

[0023] Fig.14 EE is a cross-sectional view of a semiconductor device 400 according to a modification of the fourth embodiment. DETAILED DESCRIPTION

[0024] Hereinafter, a semiconductor device according to an embodiment of the present disclosure will be described with reference to the drawings. Components having the same or equivalent functions are denoted by the same reference numerals and repeated descriptions are omitted.

[0025] Implementation method 1.

[0026] Figure 1 1 is a plan view showing the semiconductor device 100 according to the first embodiment. Figure 2 The semiconductor device according to the first embodiment in the case where the wire bonding structure is applied is shown. Figure 1 In addition, Figure 3 The semiconductor device according to the first embodiment is shown in the case where the direct wire bonding structure is applied. Figure 1 Cross-sectional view of the AA section in . Figure 4 FIG. 2 is a top view showing a modified example of the semiconductor device according to the first embodiment in which a plurality of semiconductor packages are provided on one heat sink 8. Figure 1 As shown in FIG. 1 , the semiconductor package 110 is located on the heat sink 8, and has a first electrode terminal 2 on one side of the semiconductor package 110 and a second electrode terminal 3 on the other side. Figure 2 As shown, a concave portion for accommodating and bonding the bottom surface of the semiconductor package 110 is formed on one surface of the heat sink 8, and the semiconductor package 110 is bonded to the bottom surface of the concave portion via an insulating sheet 7. Furthermore, the semiconductor package 110 is supported by the side wall of the concave portion formed in the heat sink 8. The semiconductor package 110 includes a heat sink 4, a semiconductor chip 1 provided on one surface of the heat sink 4, a first electrode terminal 2 electrically bonded to the semiconductor chip 1 via a wire 5, and a second electrode terminal 3 electrically bonded to the semiconductor chip 1 via the heat sink 4, and is sealed by a sealing resin 6. The other surface of the heat sink 4 is a surface bonded to the heat sink 8 via the insulating sheet 7 of the semiconductor package 110, and is exposed to the outside of the semiconductor package 110. In addition, the bottom surface of the semiconductor package 110 is accommodated in the concave portion formed in the heat sink 8, and the semiconductor package 110 may be supported by at least a part of the side wall of the concave portion. Therefore, it is preferable that the bottom area of ​​the concave portion is at least wider than the area of ​​the surface of the semiconductor package 110 bonded via the insulating sheet 7. Furthermore, since the semiconductor package 110 is supported by at least a portion of the side wall of the recess, it is preferable that the thickness of the insulating sheet 7 is thinner than the height of the side wall of the recess.

[0027] Here, the semiconductor chip 1 is equipped with one or more IGBTs (Insulated Gate Transistors), MOS-FETs (Metal-Oxide-Semiconductor Field-Effect Transistors), diodes, and other high current control elements. Figure 2 In the figure, only one semiconductor chip 1 is recorded, but multiple semiconductor chips may be mounted. In addition, Si (silicon) may be used as the material of the semiconductor chip 1, but wide bandgap semiconductor materials such as SiC (silicon carbide), GaN (gallium nitride) and C (diamond) may also be used. When a wide bandgap semiconductor is used as the semiconductor chip 1, power loss can be reduced compared to the case where a semiconductor chip 1 made of Si is used, so the power consumption of the semiconductor device 100 can be reduced. Furthermore, when a wide bandgap semiconductor is used as the semiconductor chip 1, heat resistance is better than that of a semiconductor chip 1 made of Si, and it can operate at a higher temperature, so the margin of thermal design becomes larger, and the semiconductor device 100 can be miniaturized.

[0028] The first electrode terminal 2 and the second electrode terminal 3 are components that are responsible for electrical connection between the inside and outside of the semiconductor device 100. The material of the first electrode terminal 2 and the second electrode terminal 3 is preferably a metal with high electrical conductivity, for example, copper is preferably used. As an example other than copper, the material of the first electrode terminal 2 and the second electrode terminal 3 may also be formed of aluminum or iron, or may be formed of an alloy thereof. Figure 2 In the figure, the first electrode terminal and the second electrode terminal protrude from the side surface of the semiconductor package 110 to the outside, but they may also protrude from the upper surface of the semiconductor package 110 to the outside. That is, the first electrode terminal and the second electrode terminal may protrude from at least one of the side surface and the upper surface of the semiconductor package 110. In addition, a semiconductor device having one electrode terminal each as the first electrode terminal and the second electrode terminal is shown, but it may also be possible to have a plurality of electrode terminals as the first electrode terminal and the second electrode terminal. In addition, in addition to the first electrode terminal and the second electrode terminal, other electrode terminals may also be provided according to the specifications of the semiconductor device.

[0029] The heat sink 4 is a component for releasing heat generated by driving the semiconductor chip 1 to the outside of the semiconductor package 110. Figure 2 In the figure, an example in which the shape of the heat sink 4 is a rectangular parallelepiped is shown, but the shape of the heat sink 4 is not limited thereto, and may be other shapes such as a trapezoid, an arch, or a cylinder. The material of the heat sink 4 is preferably a metal with high thermal conductivity, for example, copper is preferably used. As an example other than copper, the material of the heat sink 4 may also be formed of aluminum or iron, and may also be formed of an alloy thereof.

[0030] The wire 5 is a part that electrically connects the semiconductor chip 1 and the first electrode terminal 2, and is preferably made of a metal that has good processability and high conductivity, such as gold, copper, or aluminum. In addition, the wire 5 is sometimes connected as a signal line for controlling the power of the semiconductor chip 1. In this case, it plays the role of transmitting the control signal from the outside of the semiconductor package 110 to the semiconductor chip 1. In addition, if Figure 3 As shown, the wire 5 may be omitted by directly wire-bonding the semiconductor chip 1 and the first electrode terminal 2 .

[0031] The sealing resin 6 is an insulating sealant that seals the heat sink 4, the semiconductor chip 1, the wire 5, the first electrode terminal 2, and the second electrode terminal 3 to form the semiconductor package 110. The outer periphery of the semiconductor chip 1 will especially become a high electric field, so it is necessary to cover the entire semiconductor chip 1. As the material of the sealing resin 6, a resin with excellent insulating properties such as epoxy, polyimide, polyamide, or polyamideimide, or a mixture of epoxy, polyimide, polyamide, or polyamideimide with silicon dioxide, aluminum oxide, aluminum nitride, or boron nitride can be used. In addition, by using a volume resistivity of 10 within the driving temperature range of the semiconductor device, the sealing resin 6 can be used. 10 The same function can be obtained with a material having a relative dielectric constant of 20 or more and a relative dielectric constant of 20 or less. In addition, the sealing resin 6 is required to not contain voids or other factors that impair the insulation during molding and not be separated from the contents due to external factors such as vibration and heat, so transfer molding using a mold is preferably applied.

[0032] The insulating sheet 7 is a component for insulating the heat sink 4 and the heat absorber 8 while dissipating the heat from the heat sink 4 to the heat absorber 8. In order to prevent the semiconductor package 110 and the heat absorber 8 from shifting or peeling, the insulating sheet 7 is sandwiched between the semiconductor package 110 and the heat absorber 8 in a semi-hardened state, and is hardened by applying pressure and heating. The material of the insulating sheet 7 is a resin with excellent insulation such as epoxy, polyimide, polyamide or polyamide-imide, or a mixture of silicon dioxide, aluminum oxide, aluminum nitride or boron nitride added to the resin such as epoxy, polyimide, polyamide or polyamide-imide. In addition, when the material of the insulating sheet 7 includes silicone rubber, polyurethane rubber or thermosetting elastomer having a lower elastic modulus than the resin such as epoxy, polyimide, polyamide or polyamide-imide, the insulating sheet 7 has elasticity and can absorb vibration, so it has excellent vibration resistance and is more preferred. In addition, the insulating sheet 7 is preferably thick in order to improve insulation, and preferably thin in order to improve heat dissipation. In order to achieve both insulation and heat dissipation, the insulating sheet 7 is preferably 20 μm to 500 μm thick in the case of a resin with excellent insulation such as epoxy, polyimide, polyamide, polyamide-imide, silicone rubber, polyurethane rubber or thermosetting elastomer, and the upper limit of the thickness is about 2 mm in the case of a mixture containing a large amount of ceramic fillers with high heat dissipation.

[0033] The heat absorber 8 is a component responsible for dissipating heat from the semiconductor device 100. In addition, in the present disclosure, the semiconductor package 110 is joined to the bottom surface of the recess provided in the heat absorber 8 via the insulating sheet 7, and the side wall of the recess supports the semiconductor package 110. The material of the heat absorber 8 is preferably a metal with high thermal conductivity, for example, copper is preferably used. As an example other than copper, the material of the heat absorber 8 may also be formed of aluminum or iron, and may also be formed of an alloy thereof. In addition, although not shown in the figure, when the heat absorber 8 is connected to a heat sink as a structure with a large surface area for efficient heat exchange, it is possible to dissipate heat from the semiconductor device more efficiently, and more efficient heat dissipation can be achieved by applying an integrated structure with the heat sink.

[0034] in addition, Figure 4 FIG. 1 is a top view of an example in which a plurality of semiconductor packages 110 are mounted on one heat sink 8 in the semiconductor device 100 according to the first embodiment. Figure 4 As shown, even if a plurality of semiconductor packages are mounted on one heat sink 8, the same effects as described above can be obtained.

[0035] The semiconductor device thus constructed comprises: a semiconductor package, which resin-seals a heat sink, a semiconductor chip provided on one surface of the heat sink, a first electrode terminal electrically connected to the semiconductor chip, and a second electrode terminal electrically connected to the semiconductor chip, and has a bottom surface where the other surface of the heat sink is exposed from the sealing resin, and the first electrode terminal and the second electrode terminal protrude from at least one of the side surface and the upper surface; an insulating sheet provided on the bottom surface of the semiconductor package and covering at least the surface where the other surface of the heat sink is exposed; and a heat sink, which has a recessed portion for accommodating the bottom surface of the semiconductor package, the depth of the recessed portion is deeper than the thickness of the insulating sheet, the bottom surface of the recessed portion and the bottom surface of the semiconductor package are bonded via the insulating sheet, thereby supporting the semiconductor package in the recessed portion, and the semiconductor package is bonded to the recessed portion formed in the heat sink via the insulating sheet, so that the heat sink is bonded without being covered by the semiconductor package. In addition, the semiconductor package is supported by the side wall of the recessed portion, so that the bonded portion of the semiconductor package, the insulating sheet, and the heat sink is prevented from shifting or peeling.

[0036] In addition, in the case of a semiconductor device having a semiconductor package in which at least one of the first electrode terminal or the second electrode terminal protrudes from the side, the same function can be obtained by constructing a recessed portion of the heat absorber so that the depth is deeper than the thickness of the insulating sheet and shallower than the shortest length from the bottom surface of the semiconductor package to the position where the first electrode terminal and the second electrode terminal protrude.

[0037] Therefore, the structure of the semiconductor device described in Embodiment 1 can provide a semiconductor device in which the reduction in heat dissipation can be suppressed while preventing the junction between the semiconductor package, the insulating sheet, and the heat sink from shifting or peeling.

[0038] Implementation method 2.

[0039] Figure 5 It is a top view of the semiconductor device 200 according to the second embodiment. Figure 6 Show Figure 5 BB cross-section diagram in Figure 7 Show Figure 5 The CC cross-section diagram in . Figure 5 As shown in FIG. 1 , the semiconductor device 200 includes a semiconductor package 210 having a first electrode terminal 2, a second electrode terminal 3, and a third electrode terminal 10. Figure 6 as well as Figure 7 As shown, a concave portion for receiving and engaging the bottom surface of the semiconductor package 210 is formed on one surface of the heat absorber 8, and the semiconductor package 210 is engaged and supported in the concave portion of the heat absorber 8 via the insulating sheet 7. Figure 6As shown, the semiconductor package 210 has a heat sink 4 and a heat sink 11, and the heat sink 4 and the heat sink 11 are electrically connected via a bridge 12. A semiconductor chip 1 is provided on the heat sink 4, and the semiconductor chip 1 and the first electrode terminal 2 are electrically connected via a wire 5. In addition, a semiconductor chip 9 is provided on the heat sink 11, and the semiconductor chip 9 and the third electrode terminal 10 are electrically connected via a wire 5. Furthermore, the heat sink 11 and the second electrode terminal 3 are electrically connected via a wire 5. The semiconductor chip 1 and the semiconductor chip 9 can be driven at respective timings.

[0040] Here, the bridge 12 is a part that connects the heat sink 4 and the heat sink 11. The material of the bridge 12 is preferably a metal with high electrical conductivity, for example, copper is preferably used. As an example other than copper, the material of the bridge 12 can also be formed of aluminum or iron, and can also be formed of an alloy thereof. Alternatively, the wire 5 can also be used instead of the bridge 12.

[0041] Furthermore, in the second embodiment, a configuration is shown in which two semiconductor chips are provided that can be driven at respective timings, but a configuration in which three or more semiconductor chips are provided is also possible.

[0042] In the semiconductor device thus constructed, the semiconductor package is bonded to the concave portion formed on the bottom surface of the heat sink that accommodates and bonds the semiconductor package via the insulating sheet, so the heat sink is bonded without being covered by the semiconductor package. In addition, the semiconductor package involved in this embodiment is supported by the side wall of the concave portion, so that the shifting and peeling of the bonding portion of the semiconductor package, the insulating sheet and the heat sink are prevented. Furthermore, with respect to the semiconductor device involved in this embodiment, for example, when the potential when the semiconductor chip 1 is driven is set to HV, power control at three levels of 0, HV and 2HV can be performed, and further, by applying a structure of two or more semiconductor chips, power control at more than three levels can be performed.

[0043] Therefore, the structure of the semiconductor device described in Embodiment 2 can provide a semiconductor device capable of performing power control at three or more levels in addition to the same effects as those of Embodiment 1.

[0044] Implementation method 3.

[0045] Figure 8 In the semiconductor device 300 of the third embodiment, Figure 1 The top view of the semiconductor device of Embodiment 3 is the same as the AA cross section in FIG. Figure 1 same. Fig. 9 3 is a bottom view of a semiconductor package 310 of a semiconductor device according to Embodiment 3. Fig.10 FIG. 2 is a bottom view of a semiconductor package 320 of a semiconductor device 300 according to a modification of the third embodiment that can achieve the same effects as those of the third embodiment. Figure 8 As shown, the semiconductor package 310 has a protrusion 13 formed by the sealing resin 6 on the same surface as the surface of the heat sink 4 that contacts the insulating sheet 7 and protruding from the surface of the heat sink 4 that contacts the insulating sheet 7 toward the bottom surface of the recess. The height of the protrusion 13 is constant and continuous, and is lower than the thickness of the insulating sheet 7. Therefore, the protrusion 13 is directly connected to the bottom surface of the recess without the insulating sheet 7 in between, and the other surface of the heat sink 4 is connected to the bottom surface of the recess through the insulating sheet 7, and the thickness of the insulating sheet 7 is determined by the height of the protrusion 13. In addition, as Fig. 9 As shown in FIG. 1 , a convex portion 13 is continuously formed on the outer periphery of the lower surface of the semiconductor package 310. In addition, the shape of the convex portion 13 is preferably such that when the semiconductor package 310 is placed on a flat surface with the convex portion 13 facing downward, the semiconductor package 310 stands stably on its own, and the thickness of the insulating sheet 7 is determined by the height of the convex portion 13. For example, as a modified example, Fig.10 As shown, cylindrical protrusions 13 having the same height are provided at four corners of the lower surface of the semiconductor package 310 facing the bottom surface of the recess.

[0046] In the semiconductor device thus constructed, the semiconductor package is bonded to the recess formed in the heat sink via the insulating sheet, so the heat sink is bonded without being covered by the semiconductor package. In addition, the semiconductor package is supported by the side wall of the recess, so that the shifting and peeling of the joint of the semiconductor package, the insulating sheet and the heat sink are prevented. Furthermore, the semiconductor package involved in this embodiment has a convex portion with a constant height and continuous or a plurality of convex portions with equal heights, which is formed with the sealing resin on the same surface as the surface of the heat sink in contact with the insulating sheet and protrudes from the surface of the heat sink in contact with the insulating sheet toward the bottom surface of the recess, and the height of the convex portion is lower than the thickness of the insulating sheet before the semiconductor package, the insulating sheet and the heat sink are bonded, and the convex portion contacts the bottom surface of the recess without the insulating sheet, and the other surface of the heat sink presses the insulating sheet, and the other surface of the heat sink is bonded to the bottom surface of the recess via the insulating sheet. Through such a structure, with respect to the semiconductor device involved in this embodiment, the distance between the other surface of the heat sink and the bottom surface of the recessed portion is defined by the convex portion, and the deviation in the thickness of the insulating sheet generated when the semiconductor package, the insulating sheet and the heat absorber are joined is suppressed, thereby suppressing the inclination of the joining surface between the semiconductor package and the heat absorber.

[0047] Therefore, the structure of the semiconductor device shown in Embodiment 3 and its modified example can provide a semiconductor device with improved stability during manufacturing by suppressing the inclination of the bonding surface between the semiconductor package and the heat sink in addition to the same effects as those of Embodiment 1.

[0048] Implementation method 4.

[0049] Fig.111 is a top view of a semiconductor device 400 according to Embodiment 4. Fig.12 Show Fig.11 DD profile in. Fig.11 as well as Fig.12 As shown, the semiconductor device 400 of the fourth embodiment is a structure in which an insulating block 14 is provided between the first electrode terminal 2 and the heat sink 8, and between the second electrode terminal 3 and the heat sink 8 in the semiconductor device 100 of the first embodiment. The insulating block 14 is preferably provided without a gap at least between the first electrode terminal 2 and the heat sink 8, and between the second electrode terminal 3 and the heat sink 8, and is formed to be connected to the semiconductor package 410, the first electrode terminal 2, and the second electrode terminal 3. Fig.11 In the top view shown, the insulating block 14 is formed wider than the area occupied by the first electrode terminal 2 and the second electrode terminal 3, so that the creepage distance between the first electrode terminal 2 and the heat sink 8, and between the second electrode terminal 3 and the heat sink 8 can be extended. In addition, the material of the insulating block 14 is preferably a resin with excellent insulation, such as epoxy, polyimide, polyamide or polyamideimide, or a mixture of epoxy, polyimide, polyamide or polyamideimide with silicon dioxide, aluminum oxide, aluminum nitride or boron nitride. However, the material of the insulating block 14 is not limited to any material as long as it has a volume resistivity of 10 within the driving temperature range of the semiconductor device. 10 The same effect can be obtained if the dielectric constant is greater than Ω·cm and less than 20.

[0050] in addition, Fig.13 FIG. 1 is a top view showing a semiconductor device 400 according to a modification of the fourth embodiment. Fig.14 Show Fig.13 EE profile in. Fig.13 As shown, in the modification of the fourth embodiment, the insulating block 14 is also provided without a gap at least between the first electrode terminal 2 and the heat sink 8, and between the second electrode terminal 3 and the heat sink 8. Fig.14As shown in the figure, at least the surface constituting the creepage path of the insulating block 14 between the first electrode terminal 2 and the heat sink 8 and the insulating block 14 between the second electrode terminal 3 and the heat sink 8 has a groove portion sunken in parallel with the joining surface between the heat sink 8 and the insulating block 14. By having the groove portion sunken in parallel with the joining surface between the heat sink 8 and the insulating block 14 on at least the surface constituting the creepage path of the insulating block 14 between the first electrode terminal 2 and the heat sink 8 and the insulating block 14 between the second electrode terminal 3 and the heat sink 8, the creepage distance between the first electrode terminal 2 and the heat sink 8 and the creepage distance between the second electrode terminal 3 and the heat sink 8 are extended compared with the case where the groove portion is not provided. In addition, as a variation of embodiment 4, an example of forming a groove portion in the insulating block 14 is shown, but as long as the creepage distance between the first electrode terminal 2 and the heat absorber 8 and the creepage distance between the second electrode terminal 3 and the heat absorber 8 are extended, the groove portion formed in the insulating block 14 can also be a convex strip portion protruding parallel to the joint surface between the heat absorber 8 and the insulating block 14, and can also be a combination of the groove portion and the convex strip portion.

[0051] In the semiconductor device thus constructed, the semiconductor package is bonded to the recess formed in the heat absorber via the insulating sheet, so the heat absorber is bonded without being covered by the semiconductor package. In addition, the semiconductor package is supported by the side wall of the recess, so that the shifting and peeling of the bonded portion of the semiconductor package, the insulating sheet and the heat absorber are prevented. Furthermore, the semiconductor device involved in this embodiment is provided with an insulating block in the space between at least the portion of the first electrode terminal protruding from the semiconductor package and the heat absorber, and in the space between at least the portion of the second electrode terminal protruding from the semiconductor package and the heat absorber. The insulating block is connected to the semiconductor package to bury the space between the first electrode terminal and the heat absorber and the space between the second electrode terminal and the heat absorber. Therefore, it is possible to prevent the shifting of the semiconductor package and the heat absorber while ensuring the spatial distance between the first electrode terminal and the second electrode terminal and the heat absorber and extending the external creepage distance. Furthermore, in the semiconductor device according to the present embodiment, the insulating block has a groove portion or a protruding convex portion which is depressed and parallel to the joining surface of the heat absorber and the insulating block on the surface constituting at least the creepage path between the first electrode terminal and the heat absorber and between the second electrode terminal and the heat absorber, thereby further extending the creepage distance from the first electrode terminal and the second electrode terminal to the heat absorber as compared with a case where there is no groove portion or convex portion.

[0052] Therefore, in addition to the same effects as those of the first embodiment, the semiconductor device described in the fourth embodiment and its modified examples can provide a semiconductor device that further prevents the semiconductor package and the heat sink from shifting and further improves the insulation between the first electrode terminal and the second electrode terminal and the heat sink.

[0053] (Explanation of Reference Numerals)

[0054] 1: semiconductor chip; 2: first electrode terminal; 3: second electrode terminal; 4: heat sink; 5: wire; 6: sealing resin; 7: insulating sheet; 8: heat absorber; 9: semiconductor chip; 10: third electrode terminal; 11: heat sink; 12: bridge; 13: convex portion; 14: insulating block; 100: semiconductor device; 110: semiconductor package; 200: semiconductor device; 210: semiconductor package; 300: semiconductor device; 310: semiconductor package; 320: semiconductor package; 400: semiconductor device; 410: semiconductor package.

Claims

1. A semiconductor device comprising: A semiconductor package, wherein a heat sink, a semiconductor chip disposed on one surface of the heat sink, and an electrode terminal electrically connected to the semiconductor chip are sealed with resin, the semiconductor package having a bottom surface where the other surface of the heat sink is exposed from the sealing resin, and the electrode terminal protrudes from at least one of the side surface and the upper surface; An insulating sheet, disposed on the bottom surface of the semiconductor package; as well as The heat absorber has a recessed portion for accommodating the bottom surface of the semiconductor package, the depth of the recessed portion is deeper than the thickness of the insulating sheet, the bottom surface of the recessed portion and the bottom surface of the semiconductor package are joined via the insulating sheet, and the semiconductor package is supported in the recessed portion.

2. The semiconductor device according to claim 1, wherein Two or more electrode terminals are provided as the electrode terminals.

3. The semiconductor device according to claim 1 or 2, characterized in that: At least one electrode terminal protrudes from at least one side surface of the semiconductor package, and a depth of the recess is smaller than a shortest length from the electrode terminal protruding from the side surface to a bottom surface of the semiconductor package.

4. The semiconductor device according to claim 3, wherein: An insulating block is provided in a space where the electrode terminal protruding from the side surface and the heat absorber face each other.

5. The semiconductor device according to claim 4, wherein: The insulating block has a groove or a protruding convex line that is recessed and parallel to a joining surface between the heat sink and the insulating block on a surface that at least forms a creepage path between the electrode terminal protruding from the side surface and the heat sink.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that: The semiconductor package comprises: a convex portion having a constant and continuous height or a plurality of convex portions having the same height, formed by the sealing resin on the same surface as the surface of the heat sink in contact with the insulating sheet and protruding from the surface of the heat sink in contact with the insulating sheet toward the bottom surface of the recessed portion; The height of the protrusion is smaller than the thickness of the insulating sheet before the semiconductor package, the insulating sheet and the heat sink are joined, the protrusion contacts the bottom surface of the recess without the insulating sheet in between, the other surface of the heat sink presses the insulating sheet, and the other surface of the heat sink is joined to the bottom surface of the recess through the insulating sheet.

7. The semiconductor device according to any one of claims 1 to 6, wherein: The insulating sheet includes silicone rubber, polyurethane rubber or thermosetting elastomer.

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