Conductive film and preparation method thereof, photoelectric device and display device

Abstract

The invention discloses a conductive film and a preparation method thereof, a photoelectric device and a display device. The preparation method comprises the following steps: providing an initial conductive film; and the initial conductive film is placed in a carbon-containing atmosphere for carburizing treatment, and the conductive film is obtained. The initial conductive film is subjected to atmosphere carburizing treatment, so that the carbon content on the surface of the film can be increased, the conductivity of the film is improved, the resistivity and heat sensitivity of an electrode are reduced, and the film forming effect is improved.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a conductive film and a preparation method thereof, an optoelectronic device and a display device. Background Art

[0002] Conductive films are materials used to transport and conduct electric current. Films made from conductive films are widely used in the field of optoelectronics.

[0003] In order to improve the performance of the film, the conductive film needs to be annealed. The commonly used annealing method is heat treatment annealing, but long-term high-temperature heat treatment can easily cause material damage or performance degradation. Summary of the Invention

[0004] In view of this, the present application provides a conductive film and a preparation method thereof, an optoelectronic device and a display device.

[0005] The embodiment of the present application is implemented as follows:

[0006] In a first aspect, the present application provides a method for preparing a conductive film, comprising the following steps:

[0007] providing an initial conductive film;

[0008] The initial conductive film is placed in a carbon-containing atmosphere for carburizing treatment to obtain a conductive film.

[0009] In a second aspect, the present application further proposes a conductive film, which includes a conductive film prepared by the preparation method described above.

[0010] In a third aspect, the present application further proposes a photoelectric device, comprising a first electrode and a second electrode, wherein at least one of the first electrode and the second electrode comprises the conductive film described above.

[0011] In a fourth aspect, the present application further proposes a display device comprising the optoelectronic device as described above.

[0012] The present application provides an annealing method, which can increase the carbon content on the surface of the film by performing atmosphere carburizing treatment on the initial conductive film, which helps to improve the conductivity of the film, reduce the resistivity and thermal sensitivity of the electrode, and improve its film forming effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0014] Figure 1 This is a schematic flow chart of a method for preparing a conductive film according to an embodiment of the present application;

[0015] Figure 2 This is a schematic structural diagram of a photoelectric device proposed in one embodiment of the present application;

[0016] Reference numerals:

[0017] 100 - photoelectric device; 10 - anode; 20 - electron transport layer; 30 - light-emitting layer; 40 - cathode; 50 - hole injection layer; 60 - hole transport layer. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application and are not used to limit the present application.

[0019] In this application, unless otherwise specified, directional words such as "upper" and "lower" refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of this application specification, the term "including" means "including but not limited to".

[0020] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be understood as a hard limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numbers within the range. For example, the description of a range from 1 to 6 should be considered to have specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which applies regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0021] In this application, "and / or" describes the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0022] In this application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0023] In the first aspect, the present invention provides a method for preparing a conductive film. Figure 1 , the preparation method comprises the following steps:

[0024] S10, providing an initial conductive film;

[0025] S20, placing the initial conductive film in a carbon-containing atmosphere for carburizing treatment to obtain a conductive film.

[0026] This application provides an annealing method that, by subjecting an initial conductive film to atmospheric carburization, increases the carbon content on the film surface, helping to improve the film's conductivity, reduce the electrode's resistivity and thermal sensitivity, and improve its film-forming effect. Furthermore, this treatment method helps lower the temperature required for treatment, reducing damage to the film caused by high temperatures. Furthermore, this treatment method is fast and easy to control, with uniform treatment effects, helping to improve production efficiency and quality. Furthermore, this treatment method can be widely applied to the treatment of conductive films of various material types, with a wide range of applications, providing a wider range of electrode options for optoelectronic devices 100.

[0027] The initial conductive film refers to a film having conductive properties, which can be used as an electrode of the optoelectronic device 100. In some embodiments, the initial conductive film includes, but is not limited to, a doped metal oxide film, a composite film of a metal and a metal oxide, a metal film, or an alloy film; the material of the doped metal oxide film is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide; the composite film of a metal and a metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS; and the material of the metal film is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba. The conductive film preparation method proposed in this application can be widely applied to different types of electrode materials, providing more flexible options for the design of the optoelectronic device 100.

[0028] Wherein, the carbon-containing atmosphere includes a carbon-containing gas; the carbon-containing gas may include but is not limited to one or more gases containing carbon elements, for example, it may be one or more of C1-4 alkane gas, C1-4 olefin gas, C1-4 alkyne gas, and carbon monoxide. Wherein, the C1-C4 alkane gas includes one or more of methane, ethane, propane, n-butane, and isobutane, the C2-C4 olefin gas includes one or more of ethylene, propylene, 1-butene, and 2-butene, and the C2-C4 alkyne gas includes one or more of acetylene, propyne, and 1-butyne. The use of the above-mentioned carbon-containing gas in this embodiment not only helps to achieve a uniform and high-quality carburizing effect, but also because of the use of a low-temperature, low-toxicity carbon source, the environmental pollution is relatively small, which is more in line with the concept of green manufacturing. In other embodiments, the above-mentioned carbon-containing gas is one or more of methane, ethane, and acetylene.

[0029] In some embodiments, the carbon-containing atmosphere has a carbon-containing gas content of 10% to 35% by volume; for example, 10%, 15%, 20%, 25%, 30%, 35%, or any value in between. This range helps control the amount of carburization and balance the film's conductivity and film-forming properties.

[0030] In other embodiments, the carbon-containing atmosphere also includes a protective gas, which may include but is not limited to one or more inert gases, such as one or more nitrogen, argon, and helium, which helps to protect the conductive film from being damaged by oxidation or overheating. At the same time, it can stabilize the carbon-containing atmosphere and make the carburized layer on the electrode surface denser and more uniform.

[0031] In some embodiments, during the carburizing process, the carbon-containing atmosphere is first heated to facilitate carburization. The initial conductive film temperature is then increased to a value between 100°C and 150°C; for example, the initial conductive film temperature may be 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, or any two values ​​therebetween. This range facilitates controlling the carburizing rate, thereby regulating the extent of the carburizing process and the amount of carbon incorporated into the film surface.

[0032] In some embodiments, the heating time is 20 to 60 minutes, for example, 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, 60 minutes, or any value in between. Within this range, the degree of carburization treatment and the amount of carbon infiltrated into the film surface can be controlled.

[0033] In some embodiments, during the carburizing step, an electric field is applied to the initial conductive film. The electric field causes carbon ions to migrate more rapidly from the carbon source to the film surface, ultimately forming a controllable, dense, and uniform carbonized layer on the film surface, thereby improving the film's electrical conductivity, wear resistance, and corrosion resistance.

[0034] In some embodiments, the initial conductive film is placed in a carbon-containing atmosphere for carburizing treatment, and the step of obtaining the conductive film includes: placing the initial conductive film in a carbon-containing atmosphere, heating the carbon-containing atmosphere, and applying an electric field to the initial conductive film, and obtaining the conductive film through carburizing treatment. By combining heating the carbon-containing atmosphere and applying an electric field to the initial conductive film, the migration rate of carbon ions is increased, and the carbon ion concentration distribution is more uniform, the carburization amount on the film surface is higher, and a carbonized layer of uniform thickness is formed. In some embodiments, the electric field includes a direct current electric field. The direction of the direct current electric field, that is, the direction from the anode 10 to the cathode 40, is consistent with the direction from the position of the initial conductive film to the position of the carbon-containing atmosphere injection port. This helps to guide the directional migration of carbon ions and quickly migrate to the surface of the film.

[0035] In some embodiments, the DC electric field has an electric field strength of 200 to 600 V / cm. For example, the DC electric field strength can be 200 V / cm, 250 V / cm, 300 V / cm, 350 V / cm, 400 V / cm, 450 V / cm, 500 V / cm, 550 V / cm, 600 V / cm, or any value in between. Within this range, the speed and effect of the carburizing treatment can be controlled.

[0036] In some embodiments, the time for applying the electric field is 20 to 60 minutes; for example, it can be 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, 60 minutes, and values ​​between any two of the above values.

[0037] In some embodiments, the time for heating the carbon-containing atmosphere is a first time period, and the time for applying the electric field to the initial conductive film is a second time period, and the first time period and the second time period at least partially overlap.

[0038] In some embodiments, the overlapping time of the first time period and the second time period is 20 to 60 minutes; for example, it can be 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, 55 minutes, 60 minutes, and a value between any two of the above values.

[0039] It is understood that the heating of the carbon-containing atmosphere and the application of the electric field to the initial conductive film may be initiated simultaneously or at different times, as long as there is a period of time during which the heating and application of the electric field occur simultaneously. For example, in some embodiments, the carbon-containing atmosphere may be heated first, and the electric field may be applied to the initial conductive film during the heating process; in other embodiments, the electric field may be applied to the initial conductive film first, and the carbon-containing atmosphere may be heated during the application of the electric field; in still other embodiments, the heating of the carbon-containing atmosphere and the application of the electric field to the initial conductive film may be initiated simultaneously and performed simultaneously for a period of time.

[0040] In a second aspect, the present application further proposes a conductive film, which includes a conductive film produced by the conductive film production method.

[0041] In some embodiments, the conductive film contains carbon, and the mass percentage of the carbon in the conductive film is 3% to 8%; for example, it can be 3%, 4%, 5%, 6%, 7%, 8% and any value between the above two values.

[0042] In some embodiments, the carbon element is distributed on the surface of the conductive film.

[0043] In some embodiments, the portion of the conductive film infiltrated with carbon is defined as a carburized layer, and the carburized layer is located in a region near the surface of the conductive film. The conductive film includes the carburized layer, and the ratio of the thickness of the carburized layer to the thickness of the conductive film is 5 to 80:100; for example, it can be 5:100, 10:100, 20:100, 30:100, 40:100, 50:100, 60:100, 70:100, 80:100, and values ​​between any two of the above values. It is understood that since the carbon penetration rate at different locations on the surface of the conductive film may be different, resulting in deviations in the carburized depth at different locations, the thickness of the carburized layer mentioned above refers to the maximum thickness of the carburized layer at each location.

[0044] In a third aspect, the present invention provides an optoelectronic device 100, which may be an organic light emitting diode (OLED), a quantum dot light emitting diode (QLED), a solar cell, etc. Figure 2 The optoelectronic device 100 includes a first electrode and a second electrode, at least one of which includes the conductive film. The first electrode may be one of the anode 10 and the cathode 40, and the second electrode may be the other of the anode 10 and the cathode 40.

[0045] In the embodiment of the present application, at least one of the two electrodes is configured as an electrode conductive film that has been subjected to electric field + atmosphere carburization treatment. On the one hand, the carbon content on the electrode surface can be increased through electrocarburization, thereby helping to improve the conductivity and response speed of the electrode, improving the electrode performance, so that the display device equipped with the optoelectronic device 100 can have higher resolution and image quality. It can also reduce the resistivity and thermal sensitivity of the electrode, making the device more stable under high loads, thereby helping to achieve a better balance between device life and performance. On the other hand, this treatment method is carried out under the protection of a protective gas, which helps prevent the surface of the conductive film from being oxidized and thus causing sawtooth phenomenon. It can also improve the crystal structure and orientation of the material surface, making the surface have better crystal quality and reducing surface defects, thereby helping to improve the reliability of the optoelectronic device 100. In addition, the treatment temperature required for this treatment method is relatively low, which can reduce the damage to the electrode or other functional film materials caused by high temperature, helping to extend the service life of the device.

[0046] In some embodiments, when only one of the two electrodes comprises the conductive film, the remaining electrode may be a conventional electrode in the art. For example, it may be selected from, but not limited to, a doped metal oxide particle electrode, a metal and metal oxide composite electrode, a graphene electrode, a carbon nanotube electrode, a metal electrode, or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The material of the metal and metal oxide composite electrode is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

[0047] In some embodiments, the optoelectronic device 100 further includes a light-emitting layer 30 disposed between the first electrode and the second electrode. The light-emitting layer 30 may be an organic light-emitting layer or a quantum dot light-emitting layer. When the light-emitting layer 30 is an organic light-emitting layer, the optoelectronic device 100 may be an organic light-emitting device; when the light-emitting layer 30 is a quantum dot light-emitting layer, the optoelectronic device 100 may be a quantum dot light-emitting device.

[0048] The material of the organic light-emitting layer is a light-emitting material known in the art for the organic light-emitting layer of the optoelectronic device 100, for example, it can be selected from but not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distyrene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delay materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, and exciplex light-emitting materials. One or more of these.

[0049] The material of the quantum dot light-emitting layer is a quantum dot light-emitting material known in the art for the quantum dot light-emitting layer of the optoelectronic device 100, for example, can be selected from but not limited to at least one of single structure quantum dots, core-shell structure quantum dots and perovskite type semiconductor materials; the material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots are respectively selected from at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds; the II-VI group compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, Zn O, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgT e. At least one of HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group The compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlN At least one of P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2.

[0050] As an example, the core-shell structured quantum dots can be selected from but not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0051] It should be noted that for the materials of the aforementioned single-structure quantum dots, or the materials of the core of the core-shell quantum dots, or the materials of the shell of the core-shell quantum dots, the chemical formula provided only indicates the elemental composition, but does not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements: Cd, Zn, and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0052] The perovskite semiconductor material can be selected from but not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has the general structural formula AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - , I - At least one of the following: the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - , I - At least one of .

[0053] In some embodiments, the optoelectronic device 100 further includes a hole functional layer disposed between the first electrode and the second electrode. The hole functional layer includes one or both of a hole transport layer 60 and a hole injection layer 50. When the device includes both the hole transport layer 60 and the hole injection layer 50, the hole injection layer 50 is disposed closer to the anode 10. The hole transport layer 60 can be made of a material having hole transport properties known in the art for use in optoelectronic devices 100. For example, the material of the hole transport layer 60 is not limited to 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4 , 4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic Tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5 , doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; the material of the hole injection layer 50 is selected from at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0054] In some embodiments, the optoelectronic device 100 further includes an electronic functional layer disposed between the first electrode and the second electrode, wherein the electronic functional layer includes one or both of an electron transport layer and an electron injection layer. When the device includes both an electron transport layer 20 and an electron injection layer, the electron injection layer is disposed closer to the cathode 40. The electron transport layer 20 can be prepared using materials having electron transport properties known in the art for use in optoelectronic devices 100. For example, the material of the electron transport layer 20 is selected from one or more of metal oxides, doped metal oxides, Group IIB-VIA materials, Group IIIB-VA materials, and Group IB-IIIB-VIA materials; the metal oxides include one or more of ZnO, TiO2, and SnO2; the metal oxides in the doped metal oxides include one or more of ZnO, TiO2, and SnO2, and the doping elements include one or more of Al, Mg, Li, In, and Ga; the Group IIB-VIA materials include one or more of ZnS, ZnSe, CdS, and CdSe; the Group IIIB-VA materials include one or more of InP and GaP; and the Group IB-IIIB-VIA materials include one or more of CuInS and CuGaS. The material of the electron injection layer includes at least one of cesium carbonate, cesium fluoride, cesium azide, and lithium fluoride.

[0055] It is understood that the thickness of each layer in the optoelectronic device 100 is set as needed and is not limited here. In some embodiments, the thickness of the anode 10 is 10-110 nm, the thickness of the hole injection layer 50 is 30-100 nm, the thickness of the hole transport layer 60 is 20-100 nm, the thickness of the light-emitting layer 30 is 10-30 nm, the thickness of the electron transport layer 20 is 15-80 nm, the thickness of the electron injection layer is 15-80 nm, and the thickness of the cathode 40 is 10-110 nm.

[0056] When there are multiple film layers between the anode 10 and the cathode 40, and the multiple film layers are selected from the light-emitting layer 30, the electron injection layer, the electron transport layer 20, the hole transport layer 60, and the hole injection layer 50, the film layer stacking order of the photoelectric device 100 is the anode 10, the hole injection layer 50, the hole transport layer 60, the light-emitting layer 30, the electron transport layer 20, the electron injection layer, and the cathode 40; it can be understood that the photoelectric device 100 can be an upright device or an inverted device. In some embodiments, the photoelectric device 100 is an upright device, and accordingly, the photoelectric device 100 includes an anode 10, a hole injection layer 50, a hole transport layer 60, a light-emitting layer 30, an electron transport layer 20, an electron injection layer, and a cathode 40 stacked in sequence from bottom to top; in other embodiments, the photoelectric device 100 is an inverted device, and accordingly, the photoelectric device 100 includes a cathode 40, an electron injection layer, an electron transport layer 20, a light-emitting layer 30, a hole transport layer 60, a hole injection layer 50 and an anode 10 stacked in sequence from bottom to top.

[0057] It is understandable that the optoelectronic device 100 may further be provided with some functional layers conventionally used in optoelectronic devices 100 that help improve the performance of the optoelectronic device 100, such as an electron blocking layer, a hole blocking layer, an interface modification layer, etc.

[0058] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the actual requirements of the optoelectronic device 100 .

[0059] This application also provides a method for preparing a photoelectric device 100, which can be used to prepare the above-mentioned photoelectric device 100. The preparation method includes the following steps:

[0060] S1, providing a first electrode;

[0061] S2, providing a functional layer on the first electrode;

[0062] S3, disposing a second electrode on the functional layer.

[0063] In steps S1 and S3, the first electrode is selected from one of the anode 10 and the cathode 40, and the second electrode is selected from the other of the anode 10 and the cathode 40. In actual preparation, whether to prepare the anode 10 or the cathode 40 first is determined based on the film layer design of the photovoltaic device 100. For example, when the photovoltaic device 100 is designed with the anode 10 at the bottom layer and the cathode 40 at the top layer, the anode 10 is prepared first, and the first electrode is the anode 10.

[0064] Furthermore, at least one of the first electrode and the second electrode is a conductive thin film electrode, and the preparation of the conductive thin film electrode includes: providing a substrate, arranging an electrode material on the substrate to form an initial conductive thin film; and then performing an atmosphere carburizing treatment on the initial conductive thin film under an electric field environment to obtain a conductive thin film electrode. The electrode material is the material of the initial conductive thin film mentioned above; the substrate can be selected differently according to actual conditions. For example, when the conductive thin film electrode to be prepared is the first electrode, the substrate can be a glass substrate; when the conductive thin film electrode to be prepared is the second electrode, the substrate can be a stacked first electrode and a functional layer, and the electrode material is formed on the side of the functional layer facing away from the first electrode. In actual preparation, the initial conductive thin film can be prepared by a physical coating method, such as thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.

[0065] It can be understood that when the functional layer includes functional film layers such as the electron transport layer 20, the light-emitting layer 30, and the hole transport layer 60, step S2 includes: preparing one or more functional film layers in sequence according to the film layer design order of the functional layer of the optoelectronic device 100.

[0066] During actual preparation, the various film layers of the optoelectronic device 100, such as the light-emitting layer 30, the electron functional layer, and the hole functional layer, can be prepared using conventional techniques in the art, such as chemical methods or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical plating and solution methods. Physical plating methods include thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roller coating, casting, slot coating, and strip coating.

[0067] In some embodiments, after step S3, the optoelectronic device 100 is packaged. The packaging process can be performed using a conventional machine or manually. Preferably, the packaging process is performed in an environment where both oxygen and water content are less than 0.1 ppm to ensure the stability of the optoelectronic device 100.

[0068] Fourthly, the present application further provides a display device, which may be a smartphone, a portable phone, a tablet computer, a personal digital assistant (PDA), a portable multimedia player (PMP), a television, a game console, a watch-type electronic device, a head-mounted display, a personal computer display, a laptop computer, a car navigation system, a car dashboard, a digital camera, a portable camera, an external advertising board, an electro-optical panel, a medical device, a detection device, a refrigerator, a washing machine, etc. The display device includes the optoelectronic device 100 described above.

[0069] The technical solutions and technical effects of the present application are described in detail below through specific examples and comparative examples. The following examples are only some examples of the present application and do not specifically limit the present application.

[0070] Film Example 1

[0071] (1) Provide a glass substrate, place it in a vacuum coating machine, and pump the vacuum to 3×10 -4 mbar, open the Al target, Al target The Al film with a thickness of 100 nm was obtained by evaporation at a rate of 1000 s.

[0072] (2) A sealed box with a heating element installed therein and filled with a carbon-containing atmosphere is prepared, the film obtained in step (1) is placed in the sealed box, the heating element is activated to heat the film to ensure that the film temperature is 100° C., and a DC electric field with an electric field strength of 400 V / cm is applied in the sealed box for 30 minutes to obtain a carburized film. The carbon-containing atmosphere is a mixture of nitrogen and methane, and the content of methane gas in the carbon-containing atmosphere is 20%.

[0073] Film Example 2

[0074] The solution of this embodiment is basically the same as that of embodiment 1, with the only difference being that, in this embodiment, in step (1), the Al target is replaced by an Ag target to obtain an Ag film with a thickness of 100 nm.

[0075] Film Example 3

[0076] The solution of this embodiment is basically the same as that of embodiment 1, with the only difference being that, in this embodiment, the film is changed to an ITO film, and accordingly, step (1) is changed to: providing an ITO film with a thickness of 20 nm.

[0077] Film Example 4

[0078] The solution of this embodiment is basically the same as that of embodiment 1, with the only difference being that, in this embodiment, the electric field intensity in step (2) is changed to 200 V / cm.

[0079] Film Example 5

[0080] The solution of this embodiment is basically the same as that of embodiment 1, with the only difference being that, in this embodiment, the electric field intensity in step (2) is changed to 600 V / cm.

[0081] Film Example 6

[0082] The solution of this embodiment is basically the same as that of embodiment 1, with the only difference being that, in this embodiment, the electric field intensity in step (2) is changed to 620 V / cm.

[0083] Film Example 7

[0084] The solution of this embodiment is basically the same as that of embodiment 1, except that, in this embodiment,

[0085] The content of methane gas was changed to 10%.

[0086] Film Example 8

[0087] The solution of this embodiment is basically the same as that of embodiment 1, except that, in this embodiment,

[0088] The content of methane gas was changed to 35%.

[0089] Film Example 9

[0090] The solution of this embodiment is basically the same as that of embodiment 1, except that, in this embodiment,

[0091] The content of methane gas was changed to 36%.

[0092] Film Example 10

[0093] The scheme of this embodiment is basically the same as that of Example 1, with the only difference being that, in this embodiment, only the conductive film is subjected to atmosphere carburizing treatment, and accordingly, the step of "simultaneously applying a DC electric field with an electric field strength of 400 V / cm in a closed box" is omitted in step (2).

[0094] Film Comparative Example 1

[0095] The scheme of this comparative example is basically the same as that of Example 1, except that, in this comparative example, step (2)

[0096] to:

[0097] The film obtained in step (1) was fixed in a heating device, the interior of the device was evacuated to vacuum, and nitrogen was introduced as a protective gas to maintain the air pressure at 10 Pa. The sample temperature was raised to 200°C, kept warm for 30 hours, and cooled to room temperature to obtain a treated film.

[0098] Film Comparative Example 2

[0099] The scheme of this comparative example is basically the same as that of Example 1, except that, in this comparative example, step (1)

[0100] to:

[0101] In a plasma carburizing furnace, the film obtained in step (1) is fixed on the cathode, and methane is used as the carbon source to connect to the anode. After the interior of the equipment is evacuated to a vacuum, nitrogen is introduced as a protective gas to maintain the air pressure at 10 Pa. The cathode voltage is increased to 500 V, and the sample temperature is raised to 550°C to convert the carbon element in the methane into a plasma state. The temperature is kept for 1 hour and cooled to room temperature to obtain a carburized film.

[0102] Film Comparative Example 3

[0103] The scheme of this comparative example is basically the same as that of Example 1, with the only difference being that, in this comparative example, the conductive film is not subjected to any treatment, and accordingly, step (2) is omitted.

[0104] Film Comparative Example 4

[0105] The scheme of this comparative example is basically the same as that of Example 2, with the only difference being that, in this comparative example, the conductive film is not subjected to any treatment, and accordingly, step (2) is omitted.

[0106] Film Comparative Example 5

[0107] The scheme of this comparative example is basically the same as that of Example 3, with the only difference being that, in this comparative example, the conductive film is not subjected to any treatment, and accordingly, step (2) is omitted.

[0108] Device Example 1

[0109] (1) Provide an ITO anode and wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye. Then, ultrasonically clean it with deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes, and then blow dry it with nitrogen for use.

[0110] (2) Spin coating PEDOT:PSS material on the anode at a rotation speed of 3000 rpm for 30 seconds, and annealing at 100° C. for 10 minutes to obtain a hole injection layer with a thickness of 100 nm.

[0111] (3) The hole injection layer was spin-coated with TFB chlorobenzene solution at a speed of 3000 r / min for 30 s and annealed at 150° C. for 30 min to obtain a hole transport layer with a thickness of 70 nm.

[0112] (4) The composite material solution prepared in Example 1 was spin-coated on the hole transport layer at a rotation speed of 2000 rpm for 30 seconds and annealed at 80° C. for 30 minutes to obtain a light-emitting layer with a thickness of 20 nm.

[0113] (5) ZnO ethanol solution was spin-coated on the light-emitting layer at a rotation speed of 3000 rpm for 30 seconds and annealed at 80°C for 30 minutes to obtain an electron transport layer with a thickness of 70 nm.

[0114] (6) Place the wafer prepared in step (5) into a vacuum coating machine, replace the glass substrate with the wafer, and prepare a carburized film on the electron transport layer as the cathode according to steps (1) and (2) of thin film embodiment 1 to obtain a QLED device.

[0115] Device Examples 2 to 10

[0116] The schemes of device embodiments 2 to 10 are basically the same as device embodiment 1, with the only difference being that in device embodiment n, in step (6), the cathode is a carburized film prepared according to steps (1) and (2) of film embodiment n, where n is 2 to 10.

[0117] Device Example 11

[0118] The scheme of device embodiment 11 is basically the same as that of device embodiment 1, except that, in this device embodiment, both the anode and cathode are subjected to electric field + atmosphere carburizing treatment, and accordingly:

[0119] In step (1), the anode is a carburized film prepared according to the method of steps (1) and (2) of film embodiment 4.

[0120] Device Comparative Examples 1 to 5

[0121] The schemes of device comparative examples 1 to 5 are basically the same as that of device embodiment 1, with the only difference being that in device comparative example m, in step (6), the cathode is a thin film prepared according to the method of thin film comparative example m, and m is 1 to 5.

[0122] Experimental example

[0123] (1) The thin films prepared in the thin film examples and the thin film comparative examples were tested for electrical conductivity, carbon content and film-forming properties. The results are recorded in Table 1.

[0124] The film forming property is detected by using an atomic force microscope (AFM) to detect the surface average roughness Ra of the film.

[0125] The method for detecting carbon content is: using atomic absorption spectrometer and fluorescence spectrometer to detect the carbon content in the sample.

[0126] Table 1

[0127] Ra(nm) Electrode conductivity (s / m) Carbon content (%) Film Example 1 0.49 <![CDATA[6.42×10 7 ]]> 5 Film Example 2 0.47 <![CDATA[3.75×10 7 ]]> 5 Film Example 3 0.54 <![CDATA[1.62×10 7 ]]> 5 Film Example 4 0.46 <![CDATA[6.32×10 7 ]]> 5 Film Example 5 0.48 <![CDATA[6.44×10 7 ]]> 6 Film Example 6 0.67 <![CDATA[6.12×10 7 ]]> 7 Film Example 7 0.5 <![CDATA[6.47×10 7 ]]> 4 Film Example 8 0.46 <![CDATA[6.39×10 7 ]]> 5 Film Example 9 0.69 <![CDATA[6.04×10 7 ]]> 7 Film Example 10 0.66 <![CDATA[6.03×10 7 ]]> 3 Film Comparative Example 1 0.86 <![CDATA[4.42×10 7 ]]> 0 Film Comparative Example 2 0.89 <![CDATA[4.92×10 7 ]]> 9 Film Comparative Example 3 0.88 <![CDATA[5.66×10 7 ]]> 0 Film Comparative Example 4 0.65 <![CDATA[3.26×10 7 ]]> 0 Film Comparative Example 5 0.61 <![CDATA[1.31×10 7 ]]> 0

[0128] As can be seen from the above table, the film examples 1 and 4 to 10 have a higher carbon content than the film comparison examples 1 and 3, indicating that the preparation method of the present application can effectively carburize and increase the carbon content in the film;

[0129] Film Examples 1 and Examples 4 to 10 have higher conductivity and lower Ra than Film Comparative Examples 1 to 3, Film Example 2 has higher conductivity and lower Ra than Film Comparative Example 4, and Film Example 3 has higher conductivity and lower Ra than Film Comparative Example 5. This shows that the method of the present application can accurately control the amount of carburization, improve the conductivity and film-forming effect of the film, and is applicable to various types of conductive films, with a wide range of applications.

[0130] In addition, the processing temperatures of film examples 1 and examples 4 to 10 are much lower than those of film comparison examples 1 and 2, indicating that the method of the present application can effectively improve the conductivity and film-forming effect of the film at a lower temperature; compared with example 10, film example 1 has higher conductivity, carbon content and lower Ra, indicating that the conductivity and film-forming effect of the film can be further improved by combining heating and applying an electric field.

[0131] (2) The devices prepared in the above device embodiments and device comparative examples were subjected to life tests and luminous efficiency tests.

[0132] Life testing refers to measuring the time it takes for the device's brightness to decay to a certain percentage of its maximum brightness under a constant current of 2mA. The time it takes for the brightness to decay to 95% of its maximum brightness is defined as T95, and this lifetime is the actual measured lifetime. To shorten the lifetime testing period, device lifetime testing is typically performed at high brightness by accelerating device aging. The lifetime at low brightness is then calculated using a decay fitting formula. For example, the lifetime at 1000 nits is recorded as T95 1000 nits, and the calculation formula is:

[0133]

[0134] Among them, T95 L The lifespan under low brightness is usually 1000 nits. T95 His the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness to which the device is accelerated, L L Generally it is 1000 nits, A is the acceleration factor, which is 1.7.

[0135] The external quantum efficiency (EQE) is measured as the ratio of the number of electron-hole pairs injected into a quantum dot to the number of emitted photons. It is a key parameter for evaluating the quality of electrophotovoltaic devices and can be measured using an EQE optical test instrument. The voltage at which the device's brightness reaches 1 nanosecond is the turn-on voltage. The specific calculation formula is as follows:

[0136]

[0137] Where ηe is the light output coupling efficiency, ηγ is the ratio of the number of recombined carriers to the number of injected carriers, x is the ratio of the number of excitons that generate photons to the total number of excitons, KR is the rate of the radiative process, and KNR is the rate of the non-radiative process.

[0138] Test conditions: carried out at room temperature, air humidity of 30-60%.

[0139] Table 2

[0140]

[0141]

[0142] As can be seen from the above table, device embodiment 1 and embodiments 4 to 11 have higher brightness, T95@1000nits and EQE than thin film comparison examples 1 to 3, thin film embodiment 2 has higher brightness, T95@1000nits and EQE than thin film comparison example 4, and thin film embodiment 3 has higher brightness, T95@1000nits and EQE than thin film comparison example 5, indicating that the method of the present application can effectively improve the brightness, life and luminous efficiency of the device by improving the conductivity, response speed, film forming effect, etc. of the cathode / anode, reducing the impact of high temperature on functional film layers such as the light-emitting layer.

[0143] The above is a detailed introduction to the conductive film and its preparation method, optoelectronic device and display device provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, based on the ideas of the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for preparing a conductive film, characterized in that: The following steps are involved: providing an initial conductive film; The initial conductive film is placed in a carbon-containing atmosphere for carburizing to obtain a conductive film.

2. The preparation method according to claim 1, characterized in that: The initial conductive film is placed in a carbon-containing atmosphere for carburizing treatment, and the step of obtaining the conductive film includes: placing the initial conductive film in a carbon-containing atmosphere, heating the carbon-containing atmosphere, and obtaining the conductive film through carburizing treatment.

3. The preparation method according to claim 2, characterized in that: During the carburizing treatment, the temperature of the initial conductive film is 100-150° C.; and / or, The carburizing treatment time is 20 to 60 minutes.

4. The preparation method according to claim 1, characterized in that: The carbon-containing atmosphere includes a carbon-containing gas, and the carbon-containing gas includes one or more of C1-C4 alkane gas, C2-C4 olefin gas, C2-C4 acetylene gas, and carbon monoxide; and / or, The initial conductive film includes a doped metal oxide film, a composite film of metal and metal oxide, a metal film or an alloy film; the material of the doped metal oxide film is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide; the composite film of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS; the material of the metal film is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

5. The preparation method according to claim 4, characterized in that: The carbon-containing atmosphere further comprises a protective gas, wherein the protective gas comprises one or more of nitrogen, argon and helium; and / or, The C1-C4 alkane gas includes one or more of methane, ethane, propane, n-butane, and isobutane; the C2-C4 olefin gas includes one or more of ethylene, propylene, 1-butene, and 2-butene; the C2-C4 alkyne gas includes one or more of acetylene, propyne, and 1-butyne; and / or, In the carbon-containing atmosphere, the volume percentage of the carbon-containing gas is 10% to 35%.

6. The preparation method according to claim 1, characterized in that: In the carburizing step, an electric field is applied to the initial conductive film.

7. The preparation method according to claim 1, characterized in that: The initial conductive film is placed in a carbon-containing atmosphere for carburizing treatment, and the step of obtaining the conductive film includes: placing the initial conductive film in a carbon-containing atmosphere, heating the carbon-containing atmosphere, applying an electric field to the initial conductive film, and obtaining the conductive film through carburizing treatment.

8. The preparation method according to claim 7, characterized in that: The electric field comprises a direct current electric field; and / or The time for heating the carbon-containing atmosphere is a first time period, and the time for applying an electric field to the initial conductive film is a second time period. The first time period and the second time period at least partially overlap.

9. The preparation method according to claim 8, characterized in that: The electric field strength of the DC electric field is 200-600 V / cm; and / or The first time period and the second time period overlap for 20 to 60 minutes.

10. A conductive film, characterized in that: The conductive film comprises a conductive film prepared by the preparation method according to any one of claims 1 to 9.

11. The conductive film according to claim 10, characterized in that: The conductive film contains carbon element, and the mass percentage of the carbon element in the conductive film is 3% to 8%.

12. The conductive film according to claim 11, characterized in that: The carbon element is distributed on the surface of the conductive film; and / or, The conductive film includes a carburized layer containing the carbon element, and the ratio of the thickness of the carburized layer to the thickness of the conductive film is 5-80:

100.

13. A photoelectric device, characterized in that: The device comprises a first electrode and a second electrode, wherein at least one of the first electrode and the second electrode comprises the conductive film according to any one of claims 10 to 12.

14. The optoelectronic device according to claim 13, characterized in that: The photoelectric device further comprises a light-emitting layer disposed between the first electrode and the second electrode, wherein the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot light-emitting material, wherein the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TB One or more of Rb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonding of BN, hybrid localized charge transfer excited state materials, and exciplex luminescent materials, wherein the quantum dot luminescent material is selected from at least one of single structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the material of the single structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are selected from II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III- At least one of the Group VI compounds; the Group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZ At least one of nSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound is at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, Al NP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaIn At least one of NP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of; and / or, The photoelectric device further comprises a hole functional layer disposed between the first electrode and the second electrode, the hole functional layer comprising one or two layers of a hole transport layer and a hole injection layer, the material of the hole transport layer being selected from 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl)-triphenylamine, -N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), polyaniline, polypyrrole, poly(p-phenylenevinylene), poly(phenylenevinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and poly[2-methoxy-5-(3',7'- dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene) -1-yl)-N,N'-diphenylbenzidine, spiro NPB, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; the material of the hole injection layer is selected from at least one of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide; and / or, The optoelectronic device also includes an electronic functional layer arranged between the first electrode and the second electrode, the electronic functional layer includes one or two layers of an electron transport layer and an electron injection layer, the material of the electron transport layer is selected from one or more of metal oxides, doped metal oxides, IIB-VIA group materials, IIIB-VA group materials and IB-IIIB-VIA group materials; the metal oxide includes one or more of ZnO, TiO2, and SnO2; the metal oxide in the doped metal oxide includes one or more of ZnO, TiO2, and SnO2, and the doping element includes one or more of Al, Mg, Li, In, and Ga; the IIB-VIA group material includes one or more of ZnS, ZnSe, CdS, and CdSe; the IIIB-VA group material includes one or more of InP and GaP; the IB-IIIB-VIA group material includes one or more of CuInS and CuGaS; the material of the electron injection layer includes at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride.

15. A display device, characterized in that: Comprising the optoelectronic device according to claim 13 or 14.

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