Component carrier and method of manufacturing a component carrier

Abstract

A component carrier and a method of manufacturing a component carrier are provided. The component carrier (100) comprises a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, where the stack comprises: i) a support layer structure (110), the support layer structure (110) comprising at least one via (115); ii) a metal paste filler material (120), the metal paste filler material (120) being located in the through hole (115); and iii) a metal pad (140) disposed on and extending from the outer major surface (111) of the support layer structure (110), the metal pad (140) being disposed on and extending from the outer major surface (111) of the support layer structure (110); wherein the metal pad (140) and the metal paste filler material (120) located in the through hole (115) comprise at least partially the same material.

Description

Technical Field

[0001] The invention relates to a component carrier having a stack with a supporting layer structure, a metal paste filling material and a metal pad. Furthermore, the invention relates to a method for producing such a component carrier.

[0002] Thus, the present invention may relate to the technical field of component carriers, such as printed circuit boards or IC substrates. Background Art

[0003] Against the background of increasing product functions of component carriers equipped with one or more electronic components and the increasing miniaturization of such electronic components as well as the increasing number of electronic components to be mounted on component carriers, such as printed circuit boards, increasingly powerful array-like components or packages with a plurality of electronic components are being used, which array-like components or packages have a plurality of contacts or connections, wherein the spacings between these contacts are increasingly smaller. Removing the heat generated by these electronic components and the component carriers themselves during operation is becoming an increasing problem. In addition, effective protection against electromagnetic interference (EMI) is also becoming an increasing problem. At the same time, the component carrier should be mechanically robust and electrically and magnetically reliable in order to be able to operate, even under adverse conditions.

[0004] In particular, making reliable (electrical) interconnects (e.g., vias) in component carriers can be a challenge. Traditionally, through-holes extending through dielectric layers are formed by drilling, e.g., mechanical or laser drilling. The through-holes are then filled with an electrically conductive material, typically copper, using a plating process. While in some applications the entire through-hole is filled, in other applications only the sidewalls are covered with an electrically conductive material (plated through-hole).

[0005] However, conventional methods may have some disadvantages. In order to perform the plating process, a seed layer must usually be applied to the sidewalls of the through-hole. Therefore, high aspect ratios (long and thin interconnects) may be difficult to produce. In particular, voids / depressions may be created by the plating process. Plating may require long processing times and there may be a risk of over-plating. In addition, special applications such as glass substrates may be another challenge because special applications such as glass substrates may break during conventional manufacturing processes. Summary of the invention

[0006] It may be desirable to provide a component carrier with reliable electrical interconnects in an efficient manner, and in particular to provide a component carrier including reliable electrical interconnects with a high aspect ratio.

[0007] A component carrier and a method of production are described.

[0008] According to an aspect of the invention, a component carrier is described, the component carrier comprising a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, wherein the stack comprises:

[0009] i) a support layer structure (e.g., a glass support layer structure or a glass core), the support layer structure comprising at least one through hole (e.g., a laser via);

[0010] ii) a metal paste filling material (eg, including metal particles and bonding / paste material), the metal paste filling material being located in the through-hole (so as to fill the through-hole, in particular, completely fill the through-hole); and

[0011] iii) a metal pad (e.g., a metal paste pad, a plated pad, a metal paste, or a plated hybrid pad), which is disposed on the outer main surface of the supporting layer structure and extends from the outer main surface of the supporting layer structure (the outer main surface is perpendicular to the stacking direction Z, i.e., oriented along the X and Y directions).

[0012] Here, the metal pad and the metal paste filling material in the through hole include at least part of the same material (eg, metal particles and / or metal such as copper).

[0013] According to another aspect of the invention, a method of manufacturing a component carrier (e.g. as described above) is described, wherein the method comprises:

[0014] i) providing a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, and a supporting layer structure;

[0015] ii) forming a through hole in the support layer structure;

[0016] iii) filling the through-hole with a metal paste filling material, in particular, the metal paste filling material comprises metal particles (to be sintered) and a bonding material; and

[0017] iv) forming a metal pad on and extending from the outer major surface of the support layer structure.

[0018] Here, the metal pad and the metal paste filling material in the through hole include at least part of the same material (eg, metal particles and / or copper).

[0019] According to another aspect of the invention, a component carrier is described (in particular, a component carrier comprising a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure), the component carrier comprising:

[0020] i) a supporting layer structure having a through hole with inclined side walls along the entire extension of the through hole or with straight side walls; and

[0021] ii) A metal paste filler, the metal paste filler being located in the through-hole, the metal paste filler being in direct physical contact with the sidewalls of the support layer structure defining the through-hole.

[0022] According to another aspect of the invention, a method for manufacturing a component carrier, in particular a component carrier comprising a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, is described, wherein the method comprises:

[0023] i) providing a support layer structure with a through hole having inclined side walls along the entire extension of the through hole or having straight side walls; and

[0024] ii) filling the through-hole with a metal paste filler such that the metal paste filler is in direct physical contact with the sidewalls of the support layer structure defining the through-hole.

[0025] In this document, the term "support layer structure" may particularly refer to a layer structure that is configured to be arranged in a stack of component carriers and includes at least one through hole. The through hole may be formed by drilling, and the through hole preferably extends through the support layer structure, in particular, the through hole extends through the support layer structure along a thickness direction Z perpendicular to the main extension directions X, Y of the support layer structure. In an example, the support layer structure is configured as a core layer structure. In another example, the support layer structure includes a completely stable material, that is, a resin that is not partially cured. In an embodiment, the support layer structure is configured as a glass layer structure, in particular, the support layer structure is configured as a glass core. In another example, the support layer structure includes a non-resin material. The support layer structure may include at least one electrically conductive layer and / or at least one electrically insulating layer.

[0026] In this article, the term "metal paste filling material" may particularly refer to a material that includes a metal paste and is configured to fill (at least partially, particularly completely) the through-holes of the support layer structure. When the metal paste filling material is filled into the through-hole, the metal paste filling material may include metal particles and bonding materials, such as copper nanoparticles with resin or copper, silver nanoparticles with resin or copper, and silver nanoparticles with other conductive materials such as carbon nanotubes. In this state, the metal paste may be at least partially viscous. After the metal paste filling material is filled into the through-hole, the metal paste filling material may be subjected to a sintering process to stabilize / melt the material and remove / reduce the viscosity. In addition to being arranged in the through-hole, the metal paste filling material may also be arranged on top of the support layer structure, particularly during the manufacturing process. This metal paste filling material layer may be partially removed so that a metal paste filling material pad disposed on (and directly connected to) the metal paste filling material disposed in the through-hole is retained.

[0027] In this document, the term "metal pad" may particularly refer to a pad-like structure that includes or is composed of a metal, and the pad-like structure is arranged as a metal paste filling material arranged in a through hole, or as a metal paste filling material pad and is arranged on top of the metal paste filling material, or the pad-like structure is partially arranged below a layer of the metal paste filling material. In an example, the metal pad includes a metal paste material that is comparable or similar to the metal paste filling material. For example, the metal pad material may include metal particles and ultimately include a bonding material. In this example, the metal paste filling material pad may be regarded as a metal pad. In another example, the metal pad (only) includes a metal such as copper. In this example, the metal pad may be formed by a plating process (plated pad).

[0028] In the context of the present application document, the term "component carrier" may particularly denote any supporting structure on which and / or in which one or more components can be accommodated to provide mechanical support and / or electrical connection and / or thermal conduction. In other words, the component carrier may be configured as a mechanical carrier and / or electronic carrier and / or thermal carrier for the components. In particular, the component carrier may be one of a printed circuit board, an organic interposer, a metal core substrate, an inorganic substrate and an IC (integrated circuit) substrate. The component carrier may also be a hybrid board combining different types of component carriers of the above-mentioned types.

[0029] In this context, the term "component carrier" can refer to finished component carrier products as well as component carrier preforms (i.e., component carriers in production, in other words, semi-finished products). In an example, a component carrier preform can be a panel comprising a plurality of semi-finished component carriers manufactured together. At a final stage, the panel can be separated into a plurality of finished component carrier products. The component carrier comprises at least one electrically conductive structure and at least one electrically insulating structure. When components are mounted on or embedded in the component carrier, the component carrier can be used as an electrical and / or mechanical and / or thermal platform in an IC package.

[0030] According to an exemplary embodiment, the present invention may be based on the concept that when a through hole in a supporting layer structure is filled with a metal paste filling material, which is then covered by a metal pad comprising a material at least partially identical to the metal paste filling material, a component carrier having reliable electrical interconnections, in particular a component carrier having reliable electrical interconnections with a high aspect ratio, may be provided in an efficient manner.

[0031] Traditionally, through-holes are filled using a plating process that requires a seed layer first, making the final formation of high-aspect ratio vias a challenge.

[0032] The inventors have found that when a metal paste filling material is used, the provision of a seed layer can be omitted while still effectively filling the through-hole. The metal paste can effectively fill the through-hole without the need for a seed layer and can be subsequently cured using a sintering process. A metal pad (e.g., for electrical contact) can be formed in the same process, the metal pad also including the metal paste filling material. In another embodiment, the metal pad can additionally be formed directly on the metal paste filling material, for example, the metal pad can be formed directly on the metal paste filling material using a plating process. However, the integrity and overall quality can remain constant because the metal paste filling material and the metal pad include at least part of the same material, such as copper.

[0033] Exemplary Embodiments

[0034] According to an embodiment, the ratio (thickness / width) between the thickness (along the vertical direction Z) of the supporting layer structure and the minimum width (along the directions X, Y) of the through hole is at least 5, in particular, the ratio (thickness / width) between the thickness (along the vertical direction Z) of the supporting layer structure and the minimum width (along the directions X, Y) of the through hole is at least 6, more particularly, the ratio (thickness / width) between the thickness (along the vertical direction Z) of the supporting layer structure and the minimum width (along the directions X, Y) of the through hole is at least 7, more particularly, the ratio (thickness / width) between the thickness (along the vertical direction Z) of the supporting layer structure and the minimum width (along the directions X, Y) of the through hole is at least 8, more particularly, the ratio (thickness / width) between the thickness (along the vertical direction Z) of the supporting layer structure and the minimum width (along the directions X, Y) of the through hole is at least 9. In another example, the ratio is in the range of 5 to 10. In another example, the ratio is 10 or less. This may provide the advantage that interconnects (in particular, vias) with a high aspect ratio, i.e. a long and thin shape, may be efficiently provided through the supporting layer structure. In the case of an interconnect (via) with straight side walls, the width will be constant along the entire length (along Z). However, in the case of inclined (tapered) side walls, the width of the interconnect may vary along the thickness direction. In the present case, the minimum width may be selected to calculate the aspect ratio. For example, in the case of an hourglass-shaped via (see e.g. Figure 1 ), the minimum width of the hourglass (where the portion of the via from the top meets the portion of the via from the bottom) can be considered as the minimum width of the via.

[0035] According to another embodiment, the supporting layer structure is configured as a supporting plate. This can provide the advantage of a certain robustness. For example, the supporting layer structure can be used as a core layer structure to stabilize the layer stack of the component carrier. In another example, the supporting layer structure can be used as a mounting plate for (electronic) components to be mounted on the layer stack of the component carrier and / or embedded in the layer stack of the component carrier.

[0036] According to another embodiment, the support layer structure comprises or consists of one of the following: glass; ceramic; semiconductor; silicon carbide; or carbon, i.e. graphene (in other words, non-resin material). By having a glass layer structure, an electrically insulating material layer can be achieved: the electrically insulating material layer has good mechanical stability and has excellent electrical insulation and barrier properties with respect to, in particular, chemical substances. The ceramic layer structure can withstand high processing temperatures, while the semiconductor can provide specific electrical properties.

[0037] In the context of this application document, the term "glass layer structure" may particularly refer to a layer structure comprising a glass material. In this context, the term "glass" may particularly refer to an amorphous and non-crystalline solid. In an example, the glass comprises a silicate (silicate glass), in particular, the glass comprises silicon dioxide (SiO 2 ). In another example, the glass comprises borosilicate (borosilicate glass), or aluminosilicate (aluminosilicate glass). In another example, the glass comprises at least one silane and / or siloxane compound. In yet another example, the glass may comprise functional groups, such as hydrophilic and / or hydrophobic functional groups, in particular, the glass may comprise functional groups, such as hydrophilic and / or hydrophobic functional groups at the main surface. Since the glass layer is a (continuous or discontinuous) layer, the glass layer comprises two main surfaces opposite to each other.

[0038] According to another embodiment, the thickness of the support layer structure is at least 500 μm, in particular, the thickness of the support layer structure is in the range of 500 μm to 2000 μm. This may provide the following advantages: a robust (due to the thickness) support structure is obtained, which enables long (but thin) interconnects. This may provide solutions for larger form factor products and high density and high performance computing applications.

[0039] According to another embodiment, the metal paste filling material is in direct physical contact with the sidewalls of the support layer structure that define the through hole; in particular, the metal paste filling material is in direct physical contact with the sidewalls of the support layer structure that define the through hole without additional structures (in particular seed layers and / or plating layers) between the metal paste filling material and the sidewalls of the support layer structure that define the through hole. Therefore, the provision of a seed layer (which is usually necessary in the case of via plating) can be omitted and the manufacturing process can be more efficient and flexible.

[0040] According to another embodiment, the metal paste filling material is not in (direct physical) contact with the sidewalls of the support layer structure (through hole). A metal layer (e.g., a non-electrodeposited layer or a sputtered layer as a seed layer) can be formed on the sidewalls of the through hole (before this, the surface of the glass should be treated to improve adhesion), which can increase the electrical conductivity of the through-connection between the glass layer support structure and other layers of the entire component carrier after the through hole is filled with the metal paste.

[0041] According to another embodiment, the seed layer is arranged between at least a portion of the sidewall of the through hole and the metal paste filling material (see Figure 5 and Figure 6 ). The seed layer can thereby promote adhesion between the (glass) support layer structure material and the metal paste filling material.

[0042] According to another embodiment, the metal pad is a plated pad (provided by a plating process), or the component carrier also includes a plated pad (provided by a plating process) on top of the metal pad. As described above, in one example, the metal pad can be an additional structure, for example, provided by plating (and comprising a material at least partially the same as the metal paste filling material, such as copper). As described above, the metal pad can be formed from the same material as the metal paste filling material, for example, as a metal paste filling material pad. Preferably, the metal pad is formed from copper, and the paste has effective electrical conductivity, and there is a stable adhesion between the (glass) support layer and the metal layer.

[0043] According to another embodiment, the through hole has inclined side walls along the entire extension of the through hole.This structural feature may reflect the manufacturing process of laser drilling and / or etching.

[0044] According to another embodiment, the through hole has (substantially) straight side walls along the entire extension of the through hole.This structural feature may reflect the manufacturing process of mechanical drilling.

[0045] According to another embodiment, the through hole has an hourglass shape. This structural feature may reflect a manufacturing process of forming a first through hole portion from the top and a second through hole portion from the bottom, the first through hole portion and the second through hole portion then meeting within the supporting layer structure, in particular, the first through hole portion and the second through hole portion then meeting within the supporting layer structure and in the central / middle portion. The tapering of the through hole portion may reflect a manufacturing step of laser drilling (or etching).

[0046] According to another embodiment, the through hole has a continuously tapered shape or a continuously straight shape.

[0047] According to another embodiment, the component carrier further comprises further metal pads located on opposite main surfaces of the support layer structure and on opposite ends of the metal paste filling material. This can provide the advantage that the interconnect acts as an effective via-through connection that can be electrically contacted at the top and the bottom. Furthermore, a symmetrical structure can be provided for the product, wherein the symmetrical structure can suppress warping.

[0048] According to another embodiment, the further metal pad is a plating pad; or, the metal pad is formed by a metal paste; or, the metal pad is formed by a mixture of a plating pad and a metal paste. The component carrier may also include a further plating pad located on top of the further metal pad (see above).

[0049] According to another embodiment, the metal paste filling material includes metal particles. The metal particles may be very suitable because the metal particles provide effective electrical conductivity, and / or the metal particles can be solidified and / or bonded together during the sintering process. The metal paste filling material may also include a binding material, so that a paste / ink (a material with a certain viscosity) is formed by the metal particles. The metal paste filling material may include, for example, copper nano / micron particles. In one example, the particles may include other materials, such as polymers, small ligands, metal shells (e.g., Ag, Ni, Sn), oxide (e.g., copper oxide) shells, carbon shells, etc.

[0050] According to another embodiment, the metal paste filling material comprises nano-sized metal particles (NMP). This may provide the following advantages: already formed and well-suited materials may be directly applied, and the manufacturing may be less complex and more efficient, and the compatibility with vias of different sizes and eco-friendly may be better. In addition, the handling of the (glass) support layer structure may be easier and less likely to break. In a further example, the metal particles comprise micron metal particles, or a mixture of nano-metal particles and micron metal particles.

[0051] The nano-metal particles and micro-metal particles may have a spherical shape, a crystalline shape, or other shapes may be applied. It is important that the metal particles may have as large a contact area as possible, and thus may have less resistance and effective electrical conductivity after being bonded to each other by sintering.

[0052] According to further embodiments, at least some of the metal particles are bonded to each other. Thus, stability can be increased. Some particles may be initially bonded together, or bonding may be facilitated by a bonding material. Furthermore, the sintering process may cause bonding of the particles.

[0053] Usually, the metal particles can be coated with some metal materials, such as Sn, Cu, Ag, Au. After high temperature treatment, the coating materials will melt together, and then different particles are combined together or move together and are surrounded by the molten coating material.

[0054] According to a further embodiment, the metal paste filling material comprises sintered particles, or the metal paste filling material consists of sintered particles. This can provide the following advantages: the paste can be hardened / cured in an efficient and defined manner and can be in very close contact / bonded to each other to provide good electrical conductivity for the connection of the component carrier.

[0055] According to further embodiments, at least some of the metal particles have a material different from that of the metal pad. For example, the metal particles have a material that provides specific desired properties for electrical conductivity and mechanical stability. Even in this case, both the paste and the metal pad may include similar materials, such as copper.

[0056] According to further embodiments, the metal paste filling material is a porous material. This structural feature may directly reflect the manufacturing process using sintering (eg, sintering of nano metal particles).

[0057] According to a further embodiment, the at least one through hole comprises a (total) volume, wherein at least 50% of the (total) volume is occupied by the at least some metal particles, in particular at least 60% of the (total) volume is occupied by the at least some metal particles. This may bring the advantage that reliable electrical conduction is ensured.

[0058] According to a further embodiment, at least some of the metal particles are in direct contact with the supporting layer structure and the metal pad. This can bring about the advantage that the metal paste filling material is reliably bonded in the component carrier.

[0059] According to a further embodiment, the component carrier is configured as an inlay for a stack of further component carriers. This can provide the advantage that the described component can be used in a highly flexible manner in design. For example, the component carrier can be manufactured in a separate process (compared to the further component carrier) and then assembled to the further component carrier, for example mounted on the further component carrier and / or embedded in the further component carrier. According to a further embodiment, a further component carrier is provided, which comprises a stack and a component carrier inlay.

[0060] According to further embodiments, portions of the metal paste filling material extend into the metal pad (see Figure 6 ). This may provide the following advantages: by extending the metal paste filling material into the metal pad, overfilling of the through hole with the metal paste filling material can be easily repaired. Since the metal paste filling material and the metal pad include at least part of the same material, the overall quality of the component carrier is not affected and the adhesion between the metal layer and the glass core can be guaranteed.

[0061] According to a further embodiment, part of the material of the metal pad extends into the metal paste filling material, in particular, part of the material of the metal pad extends into the metal paste filling material and extends to the interior with respect to the outer main surface of the supporting layer structure (see Figure 4 and Figure 5). This can provide the following advantages: insufficient filling of the through-hole with the metal paste filling material can be easily repaired by having the metal pad material fill the void (recess / depression) caused by insufficient filling, and the depression or depression can be filled by electroplating, especially when the metal paste filling material is filled in the through-hole in a small volume, or when the surface of the (glass) support layer structure is to be ground after the metal paste filling process. Since the metal paste filling material and the metal pad include at least part of the same material, the overall quality of the component carrier is not affected and electrical conductivity can be supported.

[0062] According to another embodiment, the portion of the metal paste filling material extending into the metal pad, or the portion of the metal pad extending into the metal paste filling material comprises a round shape along the thickness direction Z of the stack, in particular, the portion of the metal paste filling material extending into the metal pad, or the portion of the metal pad extending into the metal paste filling material comprises a dome-like shape (concave / convex) (see Figures 4 to 6 ). This shape may be a structural feature reflecting underfilling or overfilling with the metal paste filling material. Advantageously, such structural features may be effectively and reliably compensated by providing a metal pad (at least partially comprising the same material).

[0063] According to a further embodiment, the portion of the metal paste filling material extending into the metal pad, or the portion of the metal pad extending into the metal paste filling material, at least partially fills a void (recess, depression) caused by an outer roughness of the corresponding metal pad or metal paste filling material. In this example, the defect may be caused by a process (in particular grinding) that removes material from the main surface of the supporting layer structure and thus ultimately leads to roughening.

[0064] According to a further embodiment, the metal pad is made of (entirely) the same material as the metal paste filling material, in particular wherein the metal pad forms a metal paste filling material pad on top of the metal paste filling material, in particular the metal pad forms a metal paste filling material pad on top of the metal paste filling material and in direct contact with the metal paste filling material (see Figure 2 Part J). In this example, the metal paste filling material and the metal pad can advantageously be formed in the same manufacturing process.

[0065] According to another embodiment, the method further comprises: after filling the metal paste filling material in the through hole, sintering the metal paste filling material. Therefore, the metal paste filling material can be transformed into a reliable via interconnection using established and simple technical means.

[0066] In the context of the present application document, the term "sintering" may particularly refer to a process in which a material is compacted by pressure and / or heat to form a solid mass of the material, particularly, a material is compacted by pressure and / or heat without melting the material to a liquefaction point and forming a solid mass of the material. For example, sintering may fuse metal particles together and thereby form a solidified metal part. In one example, sintering may cause small holes between particles (e.g., using nanoparticles), while in another example, sintering may only cause point contacts between particles (e.g., using micron particles). A combination of nanoparticles and micron particles may cause nano-welding (particularly substantially free of holes) between micron particles. The sintering process may be achieved using an oven (i.e., heated, e.g., 200° C. or higher). In another example, sintering may be performed by laser sintering.

[0067] According to another embodiment, the method further comprises: sintering or plating the metal pad; in particular, sintering or plating the metal pad after sintering the metal paste filling material. As described above, the metal pad can be provided by the metal paste filling material (and in the same process), or the metal pad can be provided in another process such as plating.

[0068] According to another embodiment, the method further comprises: forming a plated pad on top of the metal pad, in particular, plating a plated pad on top of the metal pad. In particular, when the metal pad is formed by a metal paste filling material, an additional pad can be formed by the plating process (see, for example, Figure 2 Part F).

[0069] According to another embodiment, filling the through-holes with the metal paste filling material is performed by a roll coater. Figure 3 An example of such a machine is described in . For example, a roller may be used to distribute the metal paste filling material on the support layer structure and to squeeze the metal paste filling material into the through-holes. Additionally or alternatively, a screen and template method (see Figure 2 In summary, the established technology can be directly implemented in a simple manner to fill the through-holes with metal paste filling materials in an effective and reliable manner.

[0070] In one embodiment, the component carrier is configured as one of a printed circuit board, a substrate (in particular an IC substrate) and an interposer.

[0071] In one embodiment, the component carrier is formed as a plate. This contributes to a compact design, wherein the component carrier nevertheless provides a large base for the components mounted on the component carrier. In addition, in particular bare chips, for example as embedded electronic components, can be easily embedded in thin plates, such as printed circuit boards, due to their low thickness.

[0072] In one embodiment, the component carrier stack comprises at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of the mentioned electrically insulating layer structure and the electrically conductive layer structure, in particular a laminate formed by applying mechanical pressure and / or thermal energy. The mentioned stack can provide a plate-like component carrier that can provide a large mounting surface for other components and still be very thin and compact.

[0073] In the context of the present application, the term "printed circuit board (PCB)" may particularly denote a plate-like component carrier formed by laminating a plurality of electrically conductive layer structures with a plurality of electrically insulating layer structures, for example by applying pressure and / or by supplying thermal energy. As a preferred material for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may comprise resin and / or glass fibers, so-called prepregs, or FR4 materials. The individual electrically conductive layer structures may be connected to one another in a desired manner by forming holes through the laminate, for example by laser drilling or mechanical drilling, and by partially or completely filling these holes with an electrically conductive material, in particular copper, to form vias or any other through-hole connections. The filled holes connect the entire stack (through-hole connections extending through a plurality of layers or the entire stack), or the filled holes connect at least two electrically conductive layers, so-called vias. Similarly, optical interconnects may be formed through the various layers of the stack to receive an electro-optical circuit board (EOCB). In addition to one or more components that can be embedded in the printed circuit board, the printed circuit board is generally configured to accommodate one or more components on one surface or two opposite surfaces of the plate-shaped printed circuit board. The one or more components can be connected to the corresponding main surface by welding. The dielectric portion of the PCB may include a resin with reinforcing fibers (e.g., glass fibers).

[0074] In the context of the present application, the term "substrate" may particularly denote a small component carrier. Relative to a PCB, a substrate may be a relatively small component carrier on which one or more components may be mounted and which may be used as a connection medium between one or more chips and another PCB. For example, a substrate may have approximately the same size as a component (in particular an electronic component) to be mounted on the substrate (for example, in the case of a chip scale package (CSP)). In another embodiment, the substrate may be substantially larger than a specified component (for example, in a flip chip ball grid array (FCBGA) configuration). More specifically, a substrate may be understood as a carrier for electrical connectors or power grids and a component carrier for connectors arranged laterally and / or vertically that is comparable to a printed circuit board (PCB) but with a relatively high density. A lateral connector is, for example, a conductive path, while a vertical connector may be, for example, a drilled hole. These transverse and / or vertical connectors are arranged in the substrate and can be used to provide electrical, thermal and / or mechanical connection of accommodated or unaccommodated components (such as bare wafers), in particular IC chips, to a printed circuit board or an intermediate printed circuit board. Therefore, the term "substrate" also includes "IC substrate". The dielectric part of the substrate may include a resin with reinforcing particles (such as reinforcing balls, in particular glass balls).

[0075] The substrate or interposer may include or be composed of a layer of at least one of the following: glass; silicon (Si) and / or a photosensitive or dry-etchable organic material, such as an epoxy-based stack material (e.g., an epoxy-based stack film); or a polymer compound (the polymer compound may or may not include photosensitive and / or heat-sensitive molecules), such as polyimide, polybenzoxazole.

[0076] In one embodiment, the at least one electrically insulating layer structure comprises at least one of the following: a resin or polymer, such as an epoxy resin, a cyanate ester, a benzocyclobutene resin or a bismaleimide-triazine resin; a polyphenylene derivative (e.g., based on polyphenylene ether, PPE), a polyimide (PI), a polyamide (PA), a liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE) and / or a combination thereof. A reinforcing structure, such as a mesh, a fiber, a spherical piece or other kinds of filler particles, made of glass (multilayer glass), for example, may also be used to form a composite. Semi-cured resins combined with reinforcing agents, such as fibers impregnated with the above resins, are called prepregs. These prepregs are usually named after their properties, such as FR4 or FR5, which describe their flame retardant properties. Although prepregs, especially FR4, are usually preferred for rigid PCBs, other materials, especially epoxy-based stacking materials (e.g., stacking films) or photosensitive dielectric materials may also be used. For high-frequency applications, high-frequency materials, such as polytetrafluoroethylene, liquid crystal polymers and / or cyanate resins may be preferred. In addition to these polymers, low temperature co-fired ceramics (LTCC) or other low, very low or ultra-low DK materials can be applied as electrically insulating structures in the component carrier.

[0077] In one embodiment, the at least one electrically conductive layer structure comprises at least one of the following: copper, aluminum, nickel, silver, gold, palladium, tungsten, magnesium, carbon, (particularly doped) silicon, titanium and platinum. Although copper is generally preferred, other materials or coated variants thereof, in particular coated with superconducting materials or conductive polymers, such as graphene or poly (3,4-ethylenedioxythiophene) (PEDOT), respectively, are also possible.

[0078] At least one further component may be embedded in the stack and / or may be surface mounted on the stack. The component and / or the at least one further component may be selected from at least one of the following: a non-electrically conductive inlay, an electrically conductive inlay (e.g. a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g. a heat pipe), a light-conducting element (e.g. an optical waveguide or optical conductor connector), an electronic component or a combination thereof. The inlay may be, for example, a metal block with or without a coating of insulating material (IMS-inlay), which may be embedded or surface mounted for the purpose of promoting heat dissipation. Suitable materials are defined according to the thermal conductivity of the material, which should be at least 2 W / mK. Such materials are typically based on, but not limited to, metals, metal oxides and / or ceramics, such as copper, aluminum oxide (Al2O3), ... 2 O 3) or aluminum nitride (AlN). Other geometries with increased surface areas are also often used to increase heat exchange capabilities. In addition, the components can be active electronic components (having at least one realized pn junction), passive electronic components such as resistors, inductors or capacitors, electronic chips, storage devices (e.g., DRAM or other data storage), filters, integrated circuits (e.g., field programmable gate arrays (FPGAs), programmable array logic (PALs), general purpose array logic (GALs), and complex programmable logic devices (CPLDs)), signal processing components, power management components (e.g., field effect transistors (FETs), metal oxide semiconductor field effect transistors (MOSFETs), complementary metal oxide semiconductors (CMOSs), junction field effect transistors (JFETs), or insulated gate field effect transistors (IGFETs), all of which are based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ), indium gallium arsenide (InGaAs), indium phosphide (InP) and / or any other suitable inorganic compound), optoelectronic interface elements, light emitting diodes, optical couplers, voltage converters (e.g., DC / DC converters or AC / DC converters), cryptographic components, transmitters and / or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips and energy harvesting units. However, other components may also be embedded in the component carrier. For example, a magnetic element may be used as a component. Such a magnetic element may be a permanent magnetic element (e.g., a ferromagnetic element, an antiferromagnetic element, a multiferroic element or a ferrimagnetic element, such as a ferrite core) or may be a paramagnetic element. However, the component may also be an IC substrate, an interposer or other component carrier, for example in a board-in-board configuration. The component may be surface mounted on the component carrier and / or may be embedded in the interior of the component carrier. Furthermore, other components may be used as components, in particular components which generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment.

[0079] In one embodiment, the component carrier is a laminated component carrier. In this embodiment, the component carrier is a composite of multiple layers that are stacked and connected together by applying pressure and / or heat.

[0080] After the internal layer structure of the component carrier has been processed, one or both main surfaces of the processed layer structure can be covered symmetrically or asymmetrically with one or more further electrically insulating layer structures and / or electrically conductive layer structures (in particular by lamination). In other words, the stacking can be continued until the desired number of layers is obtained.

[0081] After the formation of the stack of electrically insulating layer structures and electrically conductive layer structures has been completed, the resulting layer structure or component carrier can be subjected to a surface treatment.

[0082] In particular, in terms of surface treatment, an electrically insulating solder resist may be applied to one or both of the main surfaces of the layer stack or component carrier. For example, such a solder resist may be formed over the entire main surface and the layer of solder resist may be subsequently patterned to expose one or more electrically conductive surface portions that will be used to electrically couple the component carrier to the electronic peripheral. The surface portions of the component carrier that remain covered with the solder resist, in particular the surface portions containing copper, may be effectively protected from oxidation or corrosion.

[0083] In terms of surface treatment, a surface finish can also be selectively applied to the exposed electrically conductive surface portion of the component carrier. Such a surface finish can be an electrically conductive covering material on the exposed electrically conductive layer structure (e.g., pads, conductive traces, etc., particularly including or consisting of copper) on the surface of the component carrier. If such an exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (particularly copper) will be oxidized, thereby making the reliability of the component carrier low. In addition, the surface finish can be formed as, for example, a joint between a surface mounted component and a component carrier. The surface finish has the function of protecting the exposed electrically conductive layer structure (particularly a copper circuit), and the surface finish can realize a joining process with one or more components, for example, by welding. Examples of suitable materials for the surface finish are organic solderability preservatives (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), electroless nickel electroless palladium immersion gold (ENEPIG), gold (particularly hard gold), chemical tin (chemical and electroplating), nickel gold, nickel palladium, etc. Nickel-free materials for the surface treatment may also be used, especially for high-speed applications. Examples are ISIG (Immersion Silver Immersion Gold) and EPAG (Electroless Palladium Autocatalytic Gold). BRIEF DESCRIPTION OF THE DRAWINGS

[0084] The aspects defined above and further aspects of the present invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.

[0085] Figure 1 Section A to Figure 1 Part C of FIG. 1 shows a method for producing a component carrier according to an exemplary embodiment of the present invention. Figure 1 Part C of FIG. 1 shows a component carrier according to an exemplary embodiment of the present invention.

[0086] Figure 2 Section A to Figure 2 Section K of FIG. 1 shows in more detail a method for producing a component carrier according to an exemplary embodiment of the invention.

[0087] Figure 3 A roll coater for carrying out a method for producing a component carrier according to an exemplary embodiment of the invention is shown.

[0088] Figures 4 to 6 The connection parts between the metal paste filling material and the metal pad according to the exemplary embodiment of the present invention are respectively shown. DETAILED DESCRIPTION

[0089] Figure 1 Section A to Figure 1 Part C of FIG. 1 shows a method for manufacturing a component carrier 100 according to an exemplary embodiment of the present invention.

[0090] Figure 1 Part A: A supporting layer structure 110 (the supporting layer structure 110 is here a component carrier preform 101) configured as a glass core layer structure is provided. A through hole 115 is formed through the supporting layer structure 110 along a vertical direction Z perpendicular to the main extension directions X, Y. In the present example, the through hole 115 has an inclined side wall 112 (for example, formed by laser drilling), and each of the through holes 115 is formed in two steps: the first hole portion is formed from top to bottom, and the second hole portion is formed from bottom to top, thereby connecting to the first hole portion. Since the side wall 112 is tapered toward the central part of the supporting layer structure 110, an hourglass-shaped structure is obtained. The through hole 115 has an inclined side wall 112 along the entire extension of the through hole 115, and tapers continuously.

[0091] Figure 1 Part B: A metal paste filling material 120 is provided in the through hole 115 by roller coating or electroless deposition combined with electroplating, thereby completely filling the through hole 115. In addition to being deposited in the through hole 115, a layer 132 of the metal paste filling material 120 is also deposited on the top main surface 111 and the bottom main surface of the support layer structure 110. The layer 132 may include a seed metal layer formed by electroless deposition or sputtering.

[0092] Figure 1Part C: The layer 132 of the metal paste filling material 120 is patterned so that a metal paste filling material pad 130 is arranged on the top (and bottom) of each filled through-hole 115, and the metal paste filling material pad 130 is in direct contact with the metal paste filling material 120 located in the through-hole 115. In addition, a metal pad 140 is also formed on the top of the metal paste filling material 120 (in particular, the pad 130). An additional metal pad 141 is formed below the metal paste filling material 120 (in particular, the additional pad 131) and at the bottom side. The metal pad 140 and the metal paste filling material 120 include at least partially the same material, for example, metal (copper) particles. In one example, the metal pad 140 is formed of a metal paste material, and in another example, the metal pad 140 is formed by plating. In another example, the extension of the metal pad 140 in the main extension directions X, Y is the same as the extension of the additional metal pad 141. Alternatively, the extent of the metal pad 140 in the main extension direction X, Y is greater than the extent of the further metal pad 141 (not shown). The metal paste filling material 120 is sintered to form a stable interconnection through the support layer structure 110. The support layer structure 110 forms part of a layer stack (not shown) in the finished component carrier product 100. The metal paste filling material 120 is in direct physical contact with the sidewalls 112 of the support layer structure 110 that define the through hole 115 without a plating structure (or seed layer) between the metal paste filling material 120 and the sidewalls 112.

[0093] That is, the metal paste filling material is connected to the side wall 112 by means of an additional thin metal layer formed by non-electrolytic deposition or sputtering (the thin metal layer is directly connected to the side wall, and the thin metal layer is directly connected to the metal paste filling material). In this way, the electrical conductivity of the component carrier or the supporting layer structure (which can be a glass core) will be improved.

[0094] It can be seen that the ratio between the thickness t of the support layer structure 110 and the minimum width w of the through hole 115 is at least 5, that is, there is a high aspect ratio between the thickness t of the support layer structure 110 and the minimum width w of the through hole 115. In a specific example, the thickness t of the support layer structure 110 is at least 500 μm, in particular, the thickness t of the support layer structure 110 is in the range of 500 μm to 2000 μm.

[0095] Figure 2 Section A to Figure 2 Section K shows in more detail a method for producing a component carrier 100 according to an exemplary embodiment of the present invention.

[0096] Figure 2Part A: Providing a supporting layer structure 110 (a glass substrate or a glass core) as a component carrier preform 101. As described above, using a laser (e.g., CO 2 , UV, excimer) to form the through hole 115. An optional surface pre-treatment (e.g., SiN, coupling, plasma, roughening, etc.) may be performed.

[0097] Figure 2 Part B: Filling the through hole 115 with a metal paste filling material (so-called plug) 120, the metal paste filling material 120 comprising, for example, copper nanometal particles (NMP) and a bonding material such as a resin or other material to improve the adhesion between all elements or compounds inside the metal paste filling material and the mechanical stability of the metal paste filling material. In addition, the metal paste filling material may also include some solvent. Then, a (vacuum) sintering step is performed to sinter the metal paste filling material 120 in the through hole 115. Thereby, the compounds of the metal paste filling material will be bonded together, and the material will achieve electrical conductivity as a conductive member.

[0098] Figure 2 Part C: Providing additional metal paste filling material 120 on the top main surface and the bottom main surface of the support layer structure 110, thereby forming a layer 132 of metal paste filling material. This can be done, for example, by roller coating (see Figure 3 ).

[0099] Figure 2 Part D: An additional (vacuum) sintering step is performed to also sinter the layer 132 of the metal paste filling material. A metal layer (e.g., copper) 142 is then formed on top of the layer 132 of the metal paste filling material. The formation of the metal layer 142 can be done in an electroless plating manner and / or by plating. Plating can also be done on an electroless plating seed layer (not shown).

[0100] Figure 2 Part E: In order to pattern the metal layer 142, a dielectric film 145 is provided as a protective member at a position where the metal layer 142 should remain by lamination.

[0101] Figure 2 Part F: At locations where the dielectric film 145 is not located, the metal layer 142 and the layer 132 of the metal paste filling material are removed, for example, by etching. Then, the dielectric film 145 is peeled off. The remaining component carrier 100 is Figure 1The component carrier shown in part C of FIG. 1 is equivalent to: on the top (and bottom) of each through hole 115 (filled with the sintered metal paste filling material 120), a metal paste filling material pad 130 and a metal pad 140 are arranged. In this embodiment, the metal pad 140 is a coating pad derived from patterning the metal layer 142.

[0102] Figure 2 Part G to Figure 2 Part J of FIG. 1 shows an alternative manufacturing process.

[0103] Figure 2 Part G: Both main surfaces of the support layer structure 110 are covered with a dielectric pattern film 145 (for example, thinner than 10 μm) at the surface portions between the through holes 115, respectively.

[0104] Figure 2 Part H: The through hole 115 is filled with the metal paste filling material 120, and a metal paste filling material pad 130 is formed at the surface portion not covered by the dielectric image film 145. A sintering step (e.g., CO 2 Laser sintering or oven curing) is performed to sinter the metal paste filling material 120 in the through hole 115.

[0105] Figure 2 Part I: The main surface of the support layer structure 110 is ground to make the metal paste filling material pad 130 flush with the dielectric image film 145.

[0106] Figure 2 Part J: The dielectric image film 145 is peeled off, thereby leaving the metal paste filling material pad 130. In this example, the metal paste filling material pad 130 can also be regarded as the metal pad 140. The obtained component carrier 100 is Figure 2 The difference between the component carrier shown in part F of FIG. 1 and FIG. 2 is that the metal paste filling material pad 130 can be regarded as a metal pad 140, while Figure 2 In part F of FIG. 1 , the metal pad 140 is a separate structure formed on the metal paste filling material pad 130 .

[0107] Figure 2 Part K of FIG. 1 shows the process steps of filling the through hole 115 with the metal paste filling material 120 using a stencil 152 and a screen.

[0108] Figure 3A roller coater 150 is shown for carrying out a method for manufacturing a component carrier 100 according to an exemplary embodiment of the invention. A component carrier preform 101 (e.g., a panel comprising a supporting layer structure 110) is moved through the roller coater 150 along a process direction P, in this example, in a vertical direction (from bottom to top). However, the process direction P (coating direction) can also be different, for example a (vertical) horizontal direction. By applying coatings in two directions simultaneously, the thickness of the coating can be more uniform.

[0109] The roll coater 150 includes two rubber rollers 151 that rotate respectively and thereby convey the component carrier preform 101 in the processing direction P. The scrapers 152 are used to respectively supply the metal paste filling material 120 to the rubber rollers 151 , transfer the metal paste filling material 120 to the component carrier preform 101 , and press the metal paste filling material 120 into the through-holes 115 of the component carrier preform 101 .

[0110] Figures 4 to 6 Connection portions between the metal paste filling material 120 and the metal pad 140 according to an exemplary embodiment of the present invention are respectively shown.

[0111] Figure 4 : This embodiment of a component carrier 100 shows a supporting layer structure 110 with a through hole 115 filled with a metal paste filling material 120. On the upper main surface 111 of the supporting layer structure 110, a seed layer 160 of a metal has been deposited, and on top of the metal paste filling material 120, a metal pad 140 (here a coated metal pad) is arranged. A portion 146 of the material of the metal pad 140 extends in a (convex) dome shape into the metal paste filling material 120 and to the interior relative to the outer main surface 111 of the supporting layer structure 110 (extending into the supporting layer structure 110). During production, a layer 132 of the metal paste filling material (see e.g. Figure 2 The portion C) of the metal pad 140 is removed from the outer main surface 111, thereby roughening the outer main surface 111. Therefore, the metal seed layer 160 can adhere to the supporting layer structure 110 in a stable manner. However, there is too little metal paste filling material 120 in the through hole 115, resulting in the formation of a recessed portion / recessed portion. The metal seed layer 160 follows the shape of the recessed portion, however, this defect is repaired by the portion 146 of the material of the metal pad 140 extending into the metal paste filling material 120. In other words, the portion 146 of the material of the metal pad 140 extending into the metal paste filling material 120 at least partially fills the void caused by the outer roughness of the corresponding metal paste filling material 120.

[0112] Figure 5 : This embodiment of the component carrier 100 shows a supporting layer structure 110 having a through hole 115 filled with a metal paste filling material 120 and an outer main surface 111 (with a layer 132 covered with a metal paste filling material) Figure 2 ). In this particular example, a seed layer 160 has been applied at the sidewalls and the outer main surface 111 of the through hole. The optional seed layer 160 can be provided, for example, by sputtering and can promote adhesion between the support layer structure (glass) and the metal paste filling material 120. On top of the metal paste filling material 120, a metal pad 140 (here a plated metal pad) is arranged. Figure 4 As in the example of FIG. 1 , an undesirable recess / depression is formed between the metal paste filling material 120 and the metal pad 140 . However, the defect is repaired by the portion 146 of the material of the metal pad 140 extending into the metal paste filling material 120 .

[0113] Figure 6 : This embodiment of the component carrier 100 is similar to Figure 5 The described embodiment is very similar, but differs in that not too little but too much metal paste filling material 120 is provided at the top of the through hole 115. Therefore, a concave dome shape (an arc shape along the thickness direction Z of the stack) of the metal paste filling material 120 is formed, and the portion 130 of the metal paste filling material 120 (which can be regarded as a metal paste filling material pad) extends into the metal pad 140.

[0114] Reference numerals

[0115] 100 component carriers

[0116] 101 Component carrier preforms, panels

[0117] 111 External main surface

[0118] 115 Through hole

[0119] 120 Metal paste filling material

[0120] 130 Metal paste filling material pad

[0121] 131 Additional metal paste filling material pad

[0122] 132 Layer of metal paste filling material

[0123] 140 Metal pad

[0124] 141 Additional metal pads

[0125] 142 Metal layer / plating layer

[0126] 145 Dielectric Film

[0127] 146 Extension of metal pad

[0128] 150 Roller Coater

[0129] 151 Rubber Roller

[0130] 152 Scraper

[0131] 160 Seed layer.

Claims

1. A component carrier (100), comprising a stack having at least one electrically conductive layer structure and at least one electrically insulating layer structure, wherein: The stacked piece comprises: A support layer structure (110), the support layer structure (110) comprising at least one through hole (115); a metal paste filling material (120), the metal paste filling material (120) being located in the through hole (115); and a metal pad (140) disposed on an outer main surface (111) of the support layer structure (110) and extending from the outer main surface (111) of the support layer structure (110); The metal pad (140) and the metal paste filling material (120) located in the through hole (115) include at least part of the same material.

2. The component carrier (100) according to claim 1, in, The ratio between the thickness (t) of the support layer structure (110) and the minimum width (w) of the through hole (115) is at least 5.

3. The component carrier (100) according to claim 1 or 2, in, The supporting layer structure (110) is configured as a supporting plate.

4. The component carrier (100) according to any one of the preceding claims, in, The support layer structure (110) includes one of glass, ceramics, and semiconductors, or the support layer structure (110) is composed of one of glass, ceramics, and semiconductors.

5. The component carrier (100) according to any one of the preceding claims, in, The thickness (t) of the supporting layer structure (110) is at least 500 μm, and in particular, the thickness (t) of the supporting layer structure (110) is in the range of 500 μm to 2000 μm.

6. The component carrier (100) according to any one of the preceding claims, in, The metal paste filling material (120) is in direct physical contact with the sidewalls (112) of the support layer structure (110) that define the through hole (115), In particular, the metal paste filling material (120) is in direct physical contact with the sidewall (112) of the support layer structure (110) that defines the through hole (115) without any additional structure between the metal paste filling material (120) and the sidewall (112).

7. The component carrier (100) according to any one of the preceding claims, in, The metal pad (140) is a plated pad; or Wherein, the component carrier (100) further comprises a plated pad on top of the metal pad (140).

8. The component carrier (100) according to any one of the preceding claims, in, The through hole (115) has an inclined side wall along the entire extension of the through hole (115).

9. The component carrier (100) according to any one of the preceding claims, in, The through hole (115) has an hourglass shape.

10. The component carrier (100) according to any of the preceding claims, in, The through hole (115) has a continuously tapered shape.

11. The component carrier (100) according to any one of the preceding claims, further comprising: A further metal pad (141) is located on the opposite major surface of the support layer structure (110) and on the opposite end of the metal paste filling material (120).

12. The component carrier (100) according to claim 11, in, The additional metal pad (141) is a plated pad; or Therein, the component carrier (100) further comprises an additional plated pad on top of the additional metal pad (141).

13. The component carrier (100) according to any one of the preceding claims, in, The metal paste filling material (120) comprises metal particles, and the metal paste filling material (120) has at least one of the following characteristics: The metal paste filling material (120) includes nano-sized metal particles; At least some of the metal particles are bonded to each other; The metal paste filling material (120) comprises sintered particles, or the metal paste filling material (120) consists of sintered particles; At least some of the metal particles have a material different from that of the metal pad (140); The metal paste filling material (120) is a porous material.

14. The component carrier (100) according to any of the preceding claims, which is configured as an inlay for a layer stack of a further component carrier.

15. The component carrier (100) according to any of the preceding claims, in, A portion (130) of the metal paste filling material (120) extends into the metal pad (140).

16. The component carrier (100) according to any of the preceding claims, in, A portion (146) of the material of the metal pad (140) extends into the metal paste filling material (120), In particular, a portion (146) of the material of the metal pad (140) extends into the metal paste filling material (120) and extends to the interior relative to the outer main surface (111) of the supporting layer structure (110).

17. The component carrier (100) according to claim 15 or 16, in, The portion (130) of the metal paste filling material (120) extending into the metal pad (140), or the portion (146) of the metal pad (140) extending into the metal paste filling material (120) comprises an arc shape along a thickness direction (Z) of the stack, In particular, the portion (130) of the metal paste filling material (120) extending into the metal pad (140), or the portion (146) of the metal pad (140) extending into the metal paste filling material (120) includes a dome shape.

18. Component carrier (100) according to any of the preceding claims 15 to 17, in, The portion (130) of the metal paste filling material (120) extending into the metal pad (140), or the portion (146) of the metal pad (140) extending into the metal paste filling material (120) at least partially fills a void caused by external roughness of the corresponding metal pad (140) or the corresponding metal paste filling material (120).

19. The component carrier (100) according to any of the preceding claims, in, The metal pad (140) is made of the same material as the metal paste filling material (120), in particular, the metal pad (140) forms a metal paste filling material pad (130) on top of the metal paste filling material (120), in particular, the metal pad (140) forms a metal paste filling material pad (130) on top of the metal paste filling material (120) and in direct contact with the metal paste filling material (120).

20. A method of manufacturing a component carrier (100), wherein: The method comprises: Providing a stack (110) having at least one electrically conductive layer structure and at least one electrically insulating layer structure, and a supporting layer structure; forming a through hole (115) in the support layer structure (110); Filling the through hole (115) with a metal paste filling material (120), wherein the metal paste filling material (120) comprises metal particles and a bonding material; and forming a metal pad (140) on an outer main surface (111) of the support layer structure (110) and extending the metal pad (140) from the outer main surface of the support layer structure (110); The metal pad (140) and the metal paste filling material (120) located in the through hole (115) include at least part of the same material.

21. The method according to claim 20, further comprising: After the metal paste filling material (120) is filled in the through hole (115), the metal paste filling material (120) is sintered.

22. The method according to claim 21, further comprising: Sintering or plating the metal pad (140); In particular, after the metal paste filling material (120) is sintered, the metal pad (140) is sintered or plated.

23. The method according to any one of claims 20 to 22, further comprising: A plating pad is formed on the top of the metal pad (140), and in particular, a plating pad is plated on the top of the metal pad (140).

24. The method according to any one of claims 20 to 23, in, Filling the through hole (115) with the metal paste filling material (120) is accomplished by a roller coater (150).

Images